TW201938716A - Underlayer film forming composition for imprint, curable composition for imprint, and kit - Google Patents
Underlayer film forming composition for imprint, curable composition for imprint, and kit Download PDFInfo
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Abstract
本發明提供一種壓印用下層膜形成組成物,其包含聚合物及溶劑,該組成物中,使壓印用下層膜形成組成物成為膜狀並在80℃下烘烤時,分子量為210以上的特定化合物從上述聚合物脫離。進而,本發明係有關一種與該壓印用下層膜形成組成物有關之壓印用硬化性組成物及使用該等的試劑盒。The invention provides an underlayer film-forming composition for imprinting, which comprises a polymer and a solvent. In this composition, when the underlayer film-forming composition for imprinting is made into a film and baked at 80 ° C, the molecular weight is 210 or more. Specific compounds are released from the above polymers. Furthermore, the present invention relates to a hardenable composition for imprinting and a kit using the same, the underlayer film-forming composition for imprinting.
Description
本發明有關一種壓印用下層膜形成組成物、壓印用硬化性組成物、試劑盒的提供。The present invention relates to the provision of an underlayer film-forming composition for imprinting, a curable composition for imprinting, and a kit.
壓印法係藉由將鑄模壓至硬化性組成物並使組成物硬化之後剝離鑄模而轉印微細的圖案者。正在嘗試將該方法適用於半導體積體電路的製造等精密加工領域。由於壓印法而不需要分節器或電子束等昂貴的微細加工裝置。由於能夠實現降低製造成本、步驟簡單、高解析度及高處理量,因此在各種領域中積極研究器件的量產。The imprint method is a method in which a fine pattern is transferred by pressing a mold to a curable composition and curing the composition, and then peeling the mold. Attempts are being made to apply this method to precision processing fields such as the manufacture of semiconductor integrated circuits. The imprint method does not require expensive microfabrication equipment such as a segmenter or an electron beam. Since it is possible to reduce manufacturing costs, simple steps, high resolution, and high throughput, research on mass production of devices has been actively conducted in various fields.
在壓印法中,存在作為適用於圖案化之材料使用感光性樹脂組成物,且組合光透射性鑄模而進行加工之技術。該製造方法中,經由鑄模照射光,從而在配設於基板之感光性樹脂組成物的硬化膜上形成圖案,並將其作為絕緣構件,或將其作為用於進一步進行加工之遮罩。有時將作為照射之光使用紫外線(UV:Ultraviolet)者,特別稱作UV奈米壓印法。以該UV奈米壓印法為代表之光奈米壓印法,與需要使用熱硬化性樹脂組成物進行加熱之熱奈米壓印法不同,能夠進行室溫下的加工。因此,在排斥熱之半導體器件等製造中,能夠作為實現高品質之技術而廣泛地對應。In the imprint method, there is a technique in which a photosensitive resin composition is used as a material suitable for patterning and a light-transmitting mold is combined and processed. In this manufacturing method, light is irradiated through a mold to form a pattern on a cured film of a photosensitive resin composition disposed on a substrate, and use the pattern as an insulating member or as a mask for further processing. A person using ultraviolet (UV: Ultraviolet) as the light to be irradiated is sometimes called a UV nanoimprint method. The photonanoimprinting method typified by this UV nanoimprinting method is different from the thermal nanoimprinting method which requires heating using a thermosetting resin composition, and can process at room temperature. Therefore, it can be widely used as a technology for realizing high quality in manufacturing heat-repellent semiconductor devices and the like.
在使用感光性樹脂組成物之光奈米壓印法中,提出有利用下層膜之技術(參閱專利文獻1)。例如,專利文獻1中,揭示有一種下層膜形成用樹脂組成物,其含有:樹脂,具有(甲基)丙烯醯氧基、烷氧基羰基、及選自環氧乙基及氧雜環丁基中的至少1種基團;非離子性界面活性劑;及溶劑。且記載有如下內容:藉此鑄模擠壓後的殘餘膜厚度的偏差小,加壓後的圖案的線寬分佈不易產生偏差。
[先前技術文獻]
[專利文獻]In the photonanoimprinting method using a photosensitive resin composition, a technique using an underlayer film has been proposed (see Patent Document 1). For example, Patent Document 1 discloses a resin composition for forming an underlayer film, which contains a resin having a (meth) acryloxy group, an alkoxycarbonyl group, and a member selected from the group consisting of epoxyethyl group and oxetan group. At least one type of group; a nonionic surfactant; and a solvent. In addition, it is described that the variation in the thickness of the residual film after the extrusion of the mold is small, and the variation in the line width distribution of the pattern after pressing is unlikely to occur.
[Prior technical literature]
[Patent Literature]
[專利文獻1]國際公開第2016/027843號[Patent Document 1] International Publication No. 2016/027843
如上所述,與基於光刻之技術相比,基於壓印之微細圖案的形成其效率極佳,能夠大幅改善製造半導體器件之製造成本及生產率。而且,隨著半導體技術的進步,要求圖案的微細化或製造品質上的進一步改善。例如,在基於壓印之製造過程中,為了提高基板與壓印用硬化性組成物的密接性,研究使用壓印用下層膜形成組成物在上述壓印用下層膜形成組成物的塗膜的表面適用壓印用硬化性組成物而形成膜,關於該膜的潤濕性,要求進一步提高。又,當然還要求由該等組成物形成之下層膜與壓印層的密接性。
因此,本發明的目的在於,提供一種壓印用硬化性組成物相對於壓印用下層膜形成組成物的塗膜之潤濕性更優異,且由該等組成物形成之下層膜與壓印層的密接性優異之壓印用下層膜形成組成物、壓印用硬化性組成物及使用該等之試劑盒。As described above, compared with the technology based on photolithography, the formation of micropatterns based on imprinting has excellent efficiency, which can greatly improve the manufacturing cost and productivity of manufacturing semiconductor devices. Furthermore, with the advancement of semiconductor technology, there is a demand for miniaturization of patterns and further improvement in manufacturing quality. For example, in the manufacturing process based on imprinting, in order to improve the adhesion between the substrate and the curable composition for imprinting, the use of an underlayer film-forming composition for imprinting to study a coating film of the above-mentioned imprinting underlayer film-forming composition has been studied. A film is formed on the surface by applying a curable composition for imprinting, and the wettability of the film is required to be further improved. Also, of course, the adhesion between the underlayer film and the embossed layer formed from these compositions is also required.
Therefore, an object of the present invention is to provide a hardenable composition for imprinting, which has better wettability than a coating film of an underlayer film-forming composition for imprinting, and forms an underlayer film and imprinting from these compositions. An underlayer film-forming composition for imprint, a curable composition for imprint, and a kit using the same, which are excellent in adhesion of the layers.
以上述課題為基礎,本發明人等進行了研究,其結果發現藉由採用能夠在壓印用下層膜形成組成物中產生特定脫離成分之聚合物,能夠解決上述課題。具體而言,藉由下述方法<1>,較佳為藉由<2>至<27>解決了上述課題。
<1>一種壓印用下層膜形成組成物,其包含聚合物及溶劑,該組成物中,使上述壓印用下層膜形成組成物成為膜狀並在80℃下烘烤時,由下述式(r1)或(r2)表示且分子量為210以上的化合物從上述聚合物脫離,
[化學式1]
式中,Rr1
、Rr2
、Rr4
、Rr5
及Rr6
分別獨立地為氫原子或1價的取代基,Rr1
及Rr2
中的至少一者為取代基,Rr4
、Rr5
及Rr6
中的至少1個為取代基,Rr3
為2價的取代基。
<2>如<1>所述之壓印用下層膜形成組成物,其中
由上述式(r1)或(r2)表示之化合物由式(r1-1)表示,
[化學式2]
式中,Rr1
及Rr2
分別獨立地為氫原子或1價的取代基,Rr1
及Rr2
中的至少一者為取代基。
<3>如<1>或<2>所述之壓印用下層膜形成組成物,其中
上述聚合物包含由下述式(R-1)~(R-4)中的任一個表示之基團,
[化學式3]
式中,R1
~R3
分別獨立地為1價的取代基,R4
~R12
分別獨立地為氫原子或1價的取代基,X表示向聚合物的主鏈鍵結之位置。
<4>如<3>所述之壓印用下層膜形成組成物,其中
式中的C-O鍵從包含由上述式(R-1)~(R-4)中的任一個表示之取代基之聚合物分解,從而由上述式(r1)或(r2)表示且分子量210以上的化合物從上述聚合物脫離。
<5>如<1>至<4>中任一項所述之壓印用下層膜形成組成物,其中
上述聚合物包含聚合性基團。
<6>如<5>所述之壓印用下層膜形成組成物,其中
上述聚合性基團包含(甲基)丙烯醯基。
<7>如<1>至<6>中任一項所述之壓印用下層膜形成組成物,其中
上述聚合物包含芳香環。
<8>如<1>至<7>中任一項所述之壓印用下層膜形成組成物,其中
上述聚合物包含由下述式(1)~式(6)中的任一個表示之構成單元中的至少1種。
[化學式4]
式中,RP4
為氫原子或甲基,RP1
表示能夠使由式(r1)或(r2)表示之化合物脫離的基團。
<9>如<1>至<8>中任一項所述之壓印用下層膜形成組成物,其中
由上述式(r1)或(r2)表示之化合物包含芳香環。
<10>如<1>至<9>中任一項所述之壓印用下層膜形成組成物,其中
由上述式(r1)或(r2)表示之化合物包含聚合性基團。
<11>如<10>所述之壓印用下層膜形成組成物,其中
上述聚合性基團包含(甲基)丙烯醯基。
<12>如<1>至<11>中任一項所述之壓印用下層膜形成組成物,其中
上述式(r1)的Rr1
及Rr2
中的至少1個及式(r2)的Rr4
~Rr6
中的至少1個包含聚合性基團。
<13>如<1>至<12>中任一項所述之壓印用下層膜形成組成物,其中
由上述式(r1)或(r2)表示之化合物的分子量為1000以下。
<14>如<1>至<13>中任一項所述之壓印用下層膜形成組成物,其還包含脫離反應促進劑或其前驅物。
<15>如<1>至<14>中任一項所述之壓印用下層膜形成組成物,其還包含光聚合起始劑。
<16>如<1>至<15>中任一項所述之壓印用下層膜形成組成物,其中
由上述式(r1)或(r2)表示之化合物的表面張力為35~55mN/m。
<17>如<1>至<16>中任一項所述之壓印用下層膜形成組成物,其中
以95.0質量%以上的比例包含溶劑。
<18>一種壓印用硬化性組成物,其包含聚合性化合物,並與<1>至<17>中任一項所述之壓印用下層膜形成組成物組合而使用。
<19>一種試劑盒,其包含<1>至<17>中任一項所述之壓印用下層膜形成組成物及包含聚合性化合物之壓印用硬化性組成物。
<20>如<19>所述之試劑盒,其中
依據由上述式(r1)或(r2)表示之化合物的漢森溶解度參數及上述壓印用硬化性組成物的漢森溶解度參數並由下述數學式(H1)計算之ΔHSP值為5以下,
ΔHSP=(4.0×ΔD2
+ΔP2
+ΔH2
)0.5
……(H1)
上述ΔD為壓印用硬化性組成物的漢森溶解度參數向量的分散項成分與由式(r1)或(r2)表示之化合物的漢森溶解度參數向量的分散項成分之差,上述ΔP為壓印用硬化性組成物的漢森溶解度參數向量的極性項成分與由式(r1)或(r2)表示之化合物的漢森溶解度參數向量的極性項成分之差,上述ΔH為壓印用硬化性組成物的漢森溶解度參數向量的氫鍵項成分與由式(r1)或(r2)表示之化合物的漢森溶解度參數向量的氫鍵項成分之差。
<21>一種下層膜,其由<1>至<17>中任一項所述之下層膜形成組成物形成。
<22>一種積層體,其由<19>或<20>所述之試劑盒形成,該積層體具有:下層膜,由上述壓印用下層膜形成組成物形成;及壓印層,由上述壓印用硬化性組成物形成,且位於上述下層膜的表面。
<23>一種積層體的製造方法,其使用<19>或<20>所述之試劑盒製造積層體,其中
該製造方法包括在由上述壓印用下層膜形成組成物形成之下層膜的表面適用壓印用硬化性組成物。
<24>如<23>所述之積層體的製造方法,其中
上述壓印用硬化性組成物藉由噴墨法適用於上述下層膜的表面。
<25>如<23>或<24>所述之積層體的製造方法,其中
該製造方法還包括在基板上將上述壓印用下層膜形成組成物適用為層狀之製程,並包括在80~250℃下加熱適用成上述層狀之壓印用下層膜形成組成物之製程。
<26>一種硬化物圖案的製造方法,其使用<19>或<20>所述之試劑盒製造硬化物圖案,該硬化物圖案的製造方法具有:下層膜形成製程,在基板上適用壓印用下層膜形成組成物而形成下層膜;適用製程,在上述下層膜的表面適用壓印用硬化性組成物;鑄模接觸製程,使上述壓印用硬化性組成物與具有用於轉印圖案形狀之圖案之鑄模接觸;光照射製程,向上述壓印用硬化性組成物照射光而形成硬化物;及脫模製程,分離上述硬化物與上述鑄模。
<27>一種電路基板的製造方法,其包括藉由<26>所述之製造方法獲得硬化物圖案之製程。
[發明效果]Based on the above-mentioned problems, the present inventors have conducted studies, and as a result, they have found that the above-mentioned problems can be solved by using a polymer capable of generating a specific release component in the underlayer film-forming composition for imprint. Specifically, the above-mentioned problem is solved by the following method <1>, preferably by <2> to <27>.
<1> An underlayer film-forming composition for imprinting comprising a polymer and a solvent. In the composition, when the above-mentioned underlayer film-forming composition for imprinting is made into a film shape and baked at 80 ° C., the following is performed: A compound represented by formula (r1) or (r2) and having a molecular weight of 210 or more is detached from the polymer,
[Chemical Formula 1]
In the formula, R r1 , R r2 , R r4 , R r5 and R r6 are each independently a hydrogen atom or a monovalent substituent, at least one of R r1 and R r2 is a substituent, and R r4 , R r5 and At least one of R r6 is a substituent, and R r3 is a divalent substituent.
<2> The underlayer film-forming composition for imprinting according to <1>, wherein the compound represented by the above formula (r1) or (r2) is represented by the formula (r1-1),
[Chemical Formula 2]
In the formula, R r1 and R r2 are each independently a hydrogen atom or a monovalent substituent, and at least one of R r1 and R r2 is a substituent.
<3> The underlayer film-forming composition for imprinting according to <1> or <2>, wherein the polymer includes a group represented by any one of the following formulae (R-1) to (R-4) group,
[Chemical Formula 3]
In the formula, R 1 to R 3 are each independently a monovalent substituent, R 4 to R 12 are each independently a hydrogen atom or a monovalent substituent, and X represents a position to be bonded to the polymer's main chain.
<4> The underlayer film-forming composition for imprinting according to <3>, wherein the CO bond in the formula includes a substituent represented by any one of the formulae (R-1) to (R-4). The polymer is decomposed, and the compound represented by the formula (r1) or (r2) and having a molecular weight of 210 or more is detached from the polymer.
<5> The underlayer film-forming composition for imprinting according to any one of <1> to <4>, wherein the polymer contains a polymerizable group.
<6> The underlayer film-forming composition for imprinting according to <5>, wherein the polymerizable group includes a (meth) acrylfluorenyl group.
<7> The underlayer film-forming composition for imprinting according to any one of <1> to <6>, wherein the polymer includes an aromatic ring.
<8> The underlayer film-forming composition for imprinting according to any one of <1> to <7>, wherein the polymer includes one represented by any one of the following formulae (1) to (6) At least one of the constituent units.
[Chemical Formula 4]
In the formula, R P4 is a hydrogen atom or a methyl group, and R P1 represents a group capable of removing a compound represented by formula (r1) or (r2).
<9> The composition for forming an underlayer film for imprinting according to any one of <1> to <8>, wherein the compound represented by the above formula (r1) or (r2) contains an aromatic ring.
<10> The underlayer film-forming composition for imprinting according to any one of <1> to <9>, wherein the compound represented by the formula (r1) or (r2) contains a polymerizable group.
<11> The underlayer film-forming composition for imprinting according to <10>, wherein the polymerizable group includes a (meth) acrylfluorenyl group.
<12> The underlayer film-forming composition for imprinting according to any one of <1> to <11>, wherein at least one of R r1 and R r2 in the above formula (r1) and (r2) At least one of R r4 to R r6 contains a polymerizable group.
<13> The underlayer film-forming composition for imprinting according to any one of <1> to <12>, wherein the molecular weight of the compound represented by the formula (r1) or (r2) is 1,000 or less.
<14> The underlayer film-forming composition for imprinting according to any one of <1> to <13>, further comprising a release reaction accelerator or a precursor thereof.
<15> The underlayer film-forming composition for imprinting according to any one of <1> to <14>, further comprising a photopolymerization initiator.
<16> The underlayer film-forming composition for imprinting according to any one of <1> to <15>, wherein the surface tension of the compound represented by the above formula (r1) or (r2) is 35 to 55 mN / m .
<17> The underlayer film-forming composition for imprinting according to any one of <1> to <16>, wherein the solvent is contained in a proportion of 95.0% by mass or more.
<18> A curable composition for imprint, which contains a polymerizable compound and is used in combination with the imprint lower-layer film-forming composition according to any one of <1> to <17>.
<19> A kit comprising the underlayer film-forming composition for imprinting according to any one of <1> to <17> and a curable composition for imprinting containing a polymerizable compound.
<20> The kit according to <19>, which is based on the Hansen solubility parameter of the compound represented by the above formula (r1) or (r2) and the Hansen solubility parameter of the hardening composition for imprinting described below. The ΔHSP value calculated by the mathematical formula (H1) is 5 or less,
ΔHSP = (4.0 × ΔD 2 + ΔP 2 + ΔH 2 ) 0.5 …… (H1)
The ΔD is the difference between the dispersion term component of the Hansen solubility parameter vector of the hardening composition for imprinting and the dispersion term component of the Hansen solubility parameter vector of the compound represented by formula (r1) or (r2), and the ΔP is The difference between the polar term component of the Hansen solubility parameter vector of the hardening composition for printing and the polar term component of the Hansen solubility parameter vector of the compound represented by the formula (r1) or (r2). The difference between the hydrogen bond term component of the Hansen solubility parameter vector of the composition and the hydrogen bond term component of the Hanson solubility parameter vector of the compound represented by formula (r1) or (r2).
<21> An underlayer film formed from the underlayer film-forming composition according to any one of <1> to <17>.
<22> A laminated body formed of the kit according to <19> or <20>, the laminated body having: an underlayer film formed of the above-mentioned underlayer film forming composition for imprint; and an imprint layer formed of the above The embossing curable composition is formed on the surface of the underlayer film.
<23> A method for manufacturing a laminated body, which uses the kit described in <19> or <20> to manufacture a laminated body, wherein the manufacturing method includes forming a surface of an underlayer film from the above-mentioned underlayer film forming composition for imprinting Suitable for hardening composition for imprinting.
<24> The method for producing a laminated body according to <23>, wherein the curable composition for imprint is applied to the surface of the underlayer film by an inkjet method.
<25> The method for manufacturing a laminated body according to <23> or <24>, wherein the manufacturing method further includes applying the above-mentioned underlayer film-forming composition for imprinting to a substrate on a substrate as a layered process, and the method is included in 80 Heating at ~ 250 ° C is suitable for the process of forming the above-mentioned layered underlayer film-forming composition for imprinting.
<26> A method for manufacturing a hardened pattern, which uses the kit described in <19> or <20> to produce a hardened pattern. The method for manufacturing the hardened pattern includes a lower-layer film forming process and applying imprinting on a substrate. The underlayer film is used to form a composition to form an underlayer film; a process is applied, and a hardening composition for imprinting is applied to the surface of the underlayer film; Contacting the mold of the pattern; a light irradiation process to irradiate the hardening composition for imprint with light to form a hardened object; and a demolding process to separate the hardened object from the mold.
<27> A method for manufacturing a circuit board, comprising a process of obtaining a hardened pattern by the manufacturing method described in <26>.
[Inventive effect]
依本發明,能夠提高壓印用硬化性組成物相對於壓印用下層膜形成組成物的塗膜之潤濕性及由該等組成物形成之下層膜與壓印層的密接性。又,能夠提供適用該技術之壓印用下層膜形成組成物、壓印用硬化性組成物及適用該等之試劑盒。According to the present invention, the wettability of the hardening composition for imprinting with respect to the coating film of the underlayer film-forming composition for imprinting and the adhesion between the underlayer film and the imprinting layer formed from these compositions can be improved. Furthermore, it is possible to provide an underlayer film-forming composition for imprinting, a curable composition for imprinting, and a kit to which these are applied.
以下,對本發明的內容進行詳細說明。再者,在本說明書中,“~”係指以將記載於其前後之數值作為下限值及上限值而包含之含義使用。
在本說明書中,“(甲基)丙烯酸酯”表示丙烯酸酯及甲基丙烯酸酯。Hereinafter, the content of this invention is demonstrated in detail. In addition, in this specification, "-" means using the value contained before and after as a lower limit value and an upper limit value.
In this specification, "(meth) acrylate" means an acrylate and a methacrylate.
在本說明書中,“壓印”係指較佳為1nm~10mm尺寸的圖案轉印,更佳為係指大約10nm~100μm尺寸的圖案轉印(奈米壓印)。
在本說明書中的基團(原子團)的標記中,未記有取代及未經取代之標記為包含不具有取代基者,並且包含具有取代基之者。例如,“烷基”不僅包含不具有取代基之烷基(未經取代烷基),還包含具有取代基之烷基(取代烷基)。
在本說明書中,“光”不僅包含紫外、近紫外、遠紫外、可視、紅外等區域的波長的光或電磁波,還包含放射線。放射線例如包含微波、電子束、極紫外線(EUV)、X射線。又,還能夠使用248nm準分子雷射、193nm準分子雷射、172nm準分子雷射等雷射光。該等光可使用通過濾光器之單色光(單一波長光),亦可以是具有複數個不同波長之光(複合光)。
本發明中的溫度並無特別敘述時,設為23℃。
本發明中的沸點係指1個大氣壓(1atm=1013.25hPa)中的沸點。In this specification, "imprint" means a pattern transfer having a size of preferably 1 nm to 10 mm, and more preferably means a pattern transfer having a size of approximately 10 nm to 100 µm (nano imprint).
In the description of the group (atomic group) in the present specification, the unrepresented and unsubstituted marks include those having no substituent and those having a substituent. For example, "alkyl" includes not only alkyl groups (unsubstituted alkyl groups) having no substituents, but also alkyl groups (substituted alkyl groups) having substituents.
In this specification, "light" includes not only light or electromagnetic waves with wavelengths in the ultraviolet, near-ultraviolet, far-ultraviolet, visible, or infrared regions, but also radiation. The radiation includes, for example, microwaves, electron beams, extreme ultraviolet (EUV), and X-rays. In addition, laser light such as a 248 nm excimer laser, a 193 nm excimer laser, and a 172 nm excimer laser can also be used. The light may be a monochromatic light (single-wavelength light) passing through a filter or a light (composite light) having a plurality of different wavelengths.
When the temperature in the present invention is not particularly described, it is set to 23 ° C.
The boiling point in the present invention refers to the boiling point in 1 atmosphere (1atm = 1013.25hPa).
本發明的壓印用下層膜形成組成物的特徵為包含聚合物及溶劑,使壓印用下層膜形成組成物成為膜狀並在80℃下烘烤時,由下述式(r1)或(r2)表示之化合物(以下,有時稱作脫離成分)從聚合物脫離。藉此,壓印中的壓印用硬化性組成物相對於壓印用下層膜形成組成物的塗膜之潤濕性提高,且由該等組成物形成之下層膜及壓印層的密接性提高。其理由可推斷為如下。亦即,認為低分子成分的生成導致下層膜的表面上的界面張力下降,隨此潤濕性提高。又,認為在下層膜中產生擴散路徑,藉此壓印用硬化性組成物的硬化性成分浸入到下層膜中存在低分子成分之區域,其一部分硬化,藉此與下層膜及硬化物之間的密接性得到提高。The underlayer film-forming composition for imprinting of the present invention includes a polymer and a solvent, and when the underlayer film-forming composition for imprinting is formed into a film shape and baked at 80 ° C., the following formula (r1) or ( The compound represented by r2) (hereinafter, sometimes referred to as a release component) is released from the polymer. Thereby, the wettability of the hardenable composition for imprinting during imprinting is improved with respect to the coating film of the underlayer film-forming composition for imprinting, and the adhesion between the lower layer film and the imprinting layer is formed from these compositions. improve. The reason can be inferred as follows. That is, it is considered that the generation of the low-molecular component causes the interfacial tension on the surface of the lower film to decrease, and the wettability increases accordingly. In addition, it is thought that a diffusion path is generated in the underlayer film, so that the hardening component of the hardening composition for imprinting is immersed in the area where the low-molecular component exists in the underlayer film, and a part of it is hardened, thereby being between the underlayer film and the hardened material The adhesion is improved.
<壓印用下層膜形成組成物>
本發明中,使壓印用下層膜形成組成物成為膜狀並在80℃下烘烤時,由下述式(r1)或(r2)表示且分子量為210以上的化合物從上述聚合物脫離。以下,本說明書中,將上述化合物稱作脫離成分。<Underlayer film-forming composition for imprinting>
In the present invention, when the underlayer film-forming composition for imprinting is formed into a film shape and baked at 80 ° C., a compound represented by the following formula (r1) or (r2) and having a molecular weight of 210 or more is detached from the polymer. Hereinafter, in this specification, the said compound is called a release component.
<<脫離成分>>
脫離成分為使壓印用下層膜形成組成物成為膜狀並在80℃下烘烤時從聚合物脫離之成分,且為具有既定結構且分子量為210以上的化合物。<< detached ingredient >>
The release component is a component which makes the underlayer film-forming composition for imprinting into a film shape and is released from the polymer when baked at 80 ° C, and is a compound having a predetermined structure and a molecular weight of 210 or more.
本發明的第1實施形態中的脫離成分由下述式(r1)或(r2)表示。若脫離成分為由式(r1)或(r2)表示之化合物,則壓印用硬化性組成物中的聚合起始劑還擴散到壓印用下層膜形成組成物,壓印用硬化性組成物硬化時,壓印用下層膜形成組成物亦同時硬化,從而壓印用硬化性組成物與下層膜的密接性更加優異。
[化學式5]
式中,Rr1
、Rr2
、Rr4
、Rr5
及Rr6
分別獨立地為氫原子或1價的取代基,Rr1
及Rr2
中的至少一者為取代基,Rr4
、Rr5
及Rr6
中的至少1個為取代基,Rr3
為2價的取代基。The detached component in the first embodiment of the present invention is represented by the following formula (r1) or (r2). When the release component is a compound represented by the formula (r1) or (r2), the polymerization initiator in the hardening composition for imprinting also diffuses into the lower film forming composition for imprinting, and the hardening composition for imprinting At the time of hardening, the underlayer film-forming composition for imprinting is also hardened at the same time, so that the adhesion between the hardening composition for imprinting and the underlayer film is more excellent.
[Chemical Formula 5]
In the formula, R r1 , R r2 , R r4 , R r5 and R r6 are each independently a hydrogen atom or a monovalent substituent, at least one of R r1 and R r2 is a substituent, and R r4 , R r5 and At least one of R r6 is a substituent, and R r3 is a divalent substituent.
由式(r1)或(r2)表示之化合物由下述式(r1-1)表示為較佳。
[化學式6]
式中,Rr1
及Rr2
分別獨立地為氫原子或1價的取代基,Rr1
及Rr2
中的至少一者為取代基。The compound represented by the formula (r1) or (r2) is preferably represented by the following formula (r1-1).
[Chemical Formula 6]
In the formula, R r1 and R r2 are each independently a hydrogen atom or a monovalent substituent, and at least one of R r1 and R r2 is a substituent.
脫離成分(由式(r1)或(r2)表示之化合物或由式(r1-1)表示之化合物)包含芳香環(下述環aCy或hCy為較佳)為較佳。
尤其,式(r1)的Rr1
及Rr2
中的至少1個、式(r2)的Rr4
~Rr6
中的至少1個、式(r1-1)的Rr1
及Rr2
中的至少1個包含芳香環為較佳。作為芳香環為下述環aCy或hCy為較佳。The leaving component (the compound represented by the formula (r1) or (r2) or the compound represented by the formula (r1-1)) preferably contains an aromatic ring (the following ring aCy or hCy is more preferable).
In particular, at least one of R r1 and R r2 in formula (r1), at least one of R r4 to R r6 in formula (r2), and at least one of R r1 and R r2 in formula (r1-1) It is preferable to include an aromatic ring. The aromatic ring is preferably the following ring aCy or hCy.
作為芳香環為芳香族烴環時的具體例,可舉出苯環、萘環、蒽環、菲環、萉環、茀環、苊烯環、聯苯環、三聯苯環、茚環、二氫茚環、聯三伸苯環、四亞苯環、嵌二萘環、䓛(chrysene)環、苝環、四氫萘環等。芳香族環可採取經由或不經由連結基L複數個連結而成之結構,例如,可舉出聯苯環、二苯甲烷環、三苯甲烷環。或者,還包括一部分上述中例示者在內,作為複數個苯環連結而成之結構可舉出下述式Ar1~Ar5者。式中從苯環的中心附近向外描繪之直線表示鍵結鍵。係指經由該單鍵與任意連結基鍵結,或者經由或不經由該單鍵與下述式(T1)的L1
、L2
、P或聚合物的主鏈鍵結。A1
為2價的連結基,連結基L的例為較佳,可由氟原子取代之伸烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、羰基、氧原子、磺醯基、亞磺醯基、-NRN
-為更佳。A2
係指包含氮原子、磷原子之3價的連結基或次甲基。表示式Ar1~Ar5中,鍵結鍵任意存在2個或3個,係指依據所需的連結數在所需的部分鍵結即可。例如,從1個苯環延伸有2個鍵結鍵之態樣亦能夠作為本發明的較佳態樣而舉出。又,具有3個環之Ar2為2價的連結基之態樣亦能夠作為本發明的較佳態樣而舉出。
[化學式7]
包括上述化學式者在內,將在此例示之芳香族環的例稱作環aCy。Specific examples when the aromatic ring is an aromatic hydrocarbon ring include a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, a fluorene ring, a fluorene ring, a pinene ring, a biphenyl ring, a terphenyl ring, an indene ring, and a diphenyl ring. Indane ring, bitriphenylene ring, tetraphenylene ring, perylene ring, chrysene ring, fluorene ring, tetralin ring, etc. The aromatic ring may have a structure in which plural rings are connected with or without a linking group L, and examples thereof include a biphenyl ring, a diphenylmethane ring and a triphenylmethane ring. Alternatively, including a part of the examples exemplified above, as a structure in which a plurality of benzene rings are connected, those having the following formulae Ar1 to Ar5 are mentioned. A straight line drawn from the vicinity of the center of the benzene ring in the formula represents a bonding bond. It refers to bonding to an arbitrary linking group via the single bond, or bonding to the main chain of L 1 , L 2 , P or a polymer of the following formula (T1) with or without the single bond. A 1 is a divalent linking group, and examples of the linking group L are preferred. The alkylene group may be substituted by a fluorine atom (carbon number 1 to 12 is preferred, 1 to 6 is more preferred, and 1 to 3 is further preferred. ), A carbonyl group, an oxygen atom, a sulfofluorenyl group, a sulfinamilide group, and -NR N -are more preferred. A 2 means a trivalent linking group or a methine group containing a nitrogen atom and a phosphorus atom. In the expressions Ar1 to Ar5, there are two or three bonding bonds arbitrarily, which means that the bonding can be performed at a desired portion according to the required number of connections. For example, a state in which two bonds are extended from one benzene ring can also be cited as a preferred aspect of the present invention. In addition, an aspect in which Ar2 having three rings is a divalent linking group can also be cited as a preferred aspect of the present invention.
[Chemical Formula 7]
Examples of the aromatic ring exemplified herein, including those described above, are referred to as ring aCy.
芳香環為芳香族雜環時,其碳數為1~12為較佳,1~6為更佳,1~5為進一步較佳。作為其具體例,可舉出噻吩環、呋喃環、吡咯環、咪唑環、吡唑環、三唑環、四唑環、噻唑環、噁唑環、吡啶環、哌嗪環、嘧啶環、噠嗪環、三環、異吲哚環、吲哚環、吲唑環、嘌呤環、喹嗪環、異喹啉環、喹啉環、酞嗪環、萘啶環、喹噁啉環、喹唑啉環、噌啉(cinnoline)環、咔唑環、吖啶環、啡嗪(phenazine)環、啡噻嗪(phenothiazine)環、啡㗁環等。
芳香族雜環可為複數個環結構經由或不經由連結基L連結而成之結構。
將在此示出之芳香族雜環稱作環hCy。When the aromatic ring is an aromatic heterocyclic ring, its carbon number is preferably from 1 to 12, more preferably from 1 to 6, and even more preferably from 1 to 5. Specific examples thereof include a thiophene ring, a furan ring, a pyrrole ring, an imidazole ring, a pyrazole ring, a triazole ring, a tetrazole ring, a thiazole ring, an oxazole ring, a pyridine ring, a piperazine ring, a pyrimidine ring, and a pyridine. Azine ring, tricyclic ring, isoindole ring, indole ring, indazole ring, purine ring, quinazine ring, isoquinoline ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinazole A phenoline ring, a cinnoline ring, a carbazole ring, an acridine ring, a phenazine ring, a phenothiazine ring, a phenothiazine ring, and the like.
The aromatic heterocyclic ring may have a structure in which a plurality of ring structures are connected with or without a linking group L.
The aromatic heterocyclic ring shown here is called ring hCy.
作為脫離成分中所含之芳香環,其中苯環為較佳。
芳香環在發揮本發明的效果之範圍內可具有取代基T。取代基T為複數個時可以相互鍵結,或者經由或不經由連結基L與式中的環鍵結而形成環。例如,烷基、烯基、芳基、芳烷基等可進一步被鹵素原子(氟原子為較佳)取代。Among the aromatic rings contained in the release component, a benzene ring is preferred.
The aromatic ring may have a substituent T as long as the effect of the present invention is exhibited. When there are a plurality of substituents T, they may be bonded to each other, or may form a ring by bonding to a ring in the formula with or without a linking group L. For example, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, and the like may be further substituted with a halogen atom (a fluorine atom is preferred).
又,脫離成分包含聚合性基團為較佳。作為聚合性基團,例如,能夠舉出包含乙烯性不飽和基、環氧基、環氧丙基、氧雜環丁烷基等之基團。作為乙烯性不飽和基,可舉出包含乙烯基、烯丙基、乙烯苯基、(甲基)丙烯醯基、(甲基)丙烯醯氧基之基團。將在此例示之聚合性基團稱作聚合性基團Ps。在本發明中,其中,聚合性基團Ps包含(甲基)丙烯醯基或(甲基)丙烯醯氧基為較佳。
尤其,式(r1)的Rr1
及Rr2
中的至少1個、式(r2)的Rr4
~Rr6
中的至少1個、式(r1-1)的Rr1
及Rr2
中的至少1個包含聚合性基團為較佳。作為聚合性基團,上述聚合性基團Ps為較佳。
進而,脫離成分包含乙烯性雙鍵為較佳。尤其,藉由從聚合物脫離形成乙烯性雙鍵為較佳。藉由進行該種脫離,發揮密接力這一效果。It is preferable that the release component contains a polymerizable group. Examples of the polymerizable group include groups containing an ethylenically unsaturated group, an epoxy group, an epoxy group, an oxetanyl group, and the like. Examples of the ethylenically unsaturated group include a group containing a vinyl group, an allyl group, a vinyl phenyl group, a (meth) acrylfluorenyl group, and a (meth) acrylfluorenyl group. The polymerizable group exemplified herein is referred to as a polymerizable group Ps. In the present invention, it is preferable that the polymerizable group Ps contains a (meth) acrylfluorenyl group or a (meth) acrylfluorenyl group.
In particular, at least one of R r1 and R r2 in formula (r1), at least one of R r4 to R r6 in formula (r2), and at least one of R r1 and R r2 in formula (r1-1) It is preferable to include a polymerizable group. The polymerizable group is preferably the polymerizable group Ps.
Furthermore, it is preferable that the release component contains an ethylenic double bond. In particular, it is preferable to form an ethylenic double bond by detaching from the polymer. By performing such detachment, the effect of close contact force is exerted.
在式(r1)或(r2)或者式(r1-1)中,Rr1 、Rr2 、Rr4 、Rr5 、Rr6 為取代基時,作為該取代基可舉出後述的取代基T的例,其中,分別獨立地為烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、芳烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)或由下述式(RL-1)表示之基團為較佳。進而在式(r1)及(r2)中,至少Rr2 或Rr6 為由下述式(RL-1)表示之基團為特佳。In formula (r1) or (r2) or formula (r1-1), when R r1 , R r2 , R r4 , R r5 , and R r6 are substituents, examples of the substituent include the substituent T described later. For example, among them, each is independently an alkyl group (carbon number 1 to 12 is preferred, 1 to 6 is more preferred, and 1 to 3 is more preferred), an alkenyl group (carbon number 2 to 12 is preferred, 2 to 2 6 is more preferred, 2 to 3 are further preferred), aryl (6 to 22 carbons is preferred, 6 to 18 is more preferred, 6 to 10 is more preferred), aralkyl (7 to 6 carbons) 23 is preferable, 7 to 19 is more preferable, and 7 to 11 is more preferable) or a group represented by the following formula (RL-1) is more preferable. Furthermore, in formulae (r1) and (r2), it is particularly preferable that at least R r2 or R r6 is a group represented by the following formula (RL-1).
[化學式8]
LR1
及LR2
分別獨立地為單鍵或連結基,ArR
為包含芳香環之連結基,PR
為具有聚合性基團之基團。nr為0~8的整數,mr為1~4的整數。[Chemical Formula 8]
L R1 and L R2 each independently a single bond or a linking group, Ar R is a linking group comprising aromatic rings, P R is a group having the polymerizable group. nr is an integer from 0 to 8, and mr is an integer from 1 to 4.
LR1 為1+mr價的芳香環(上述aCy或hCy的例為較佳)、脂環(下述脂環fCy的例為較佳)、直鏈或分支的烷烴結構的基團(碳數1~40為較佳,1~30為更佳,1~20為進一步較佳)、直鏈或分支的烯烴結構的基團(碳數2~40為較佳,2~30為更佳,2~20為進一步較佳)、或直鏈或分支的炔烴結構的基團(碳數2~40為較佳,2~30為更佳,2~20為進一步較佳)為較佳。L R1 is a 1 + mr valence aromatic ring (the examples of aCy or hCy above are preferred), alicyclic rings (the examples of alicyclic fCy below are preferred), linear or branched alkane-structured groups (carbon number 1 to 40 is preferred, 1 to 30 is more preferred, and 1 to 20 is further preferred), a linear or branched olefin structure group (carbon number of 2 to 40 is preferred, 2 to 30 is more preferred, 2 to 20 is more preferred) or a linear or branched alkyne structure group (2 to 40 carbons is preferred, 2 to 30 is more preferred, 2 to 20 is more preferred) is more preferred.
LR2
的連結基為包含下述連結基L或下述雜原子之連結基Lh的例為較佳。其中,伸烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、伸芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、(低聚)伸烷氧基(1個構成單元中的伸烷基的碳數為1~12為較佳,1~6為更佳,1~3為進一步較佳;重複數為1~50為較佳,1~40為更佳,1~30為進一步較佳)、羰基、氧原子或組合該等而成之基團為較佳。
LR2
可經由或不經由連結基L與LR1
鍵結而形成環。An example in which the linking group of L R2 is a linking group Lh containing a linking group L or a hetero atom described below is preferred. Among them, alkylene (carbon number 1 to 12 is preferred, 1 to 6 is more preferred, and 1 to 3 is more preferred), and aryl (carbon number 6 to 22 is preferred, 6 to 18 is more preferred) , 6 to 10 are further preferred), (oligomeric) alkoxy (the carbon number of the alkylene in one constituent unit is preferably 1 to 12, 1 to 6 is more preferred, and 1 to 3 is It is further preferred; the repeat number is preferably from 1 to 50, more preferably from 1 to 40, and even more preferably from 1 to 30), a carbonyl group, an oxygen atom, or a combination thereof.
L R2 may form a ring by bonding to L R1 with or without a linking group L.
ArR 為包含芳香環之連結基。其中,nr為0時,ArR 為包含芳香環之取代基。作為芳香環,上述的環aCy或hCy為較佳。ArR 包含除芳香環之外的取代基時,作為其連結基可舉出下述連結基L的例,其中,伸烷基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、伸烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、伸炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、(低聚)伸烷氧基(1個構成單元中的伸烷基的碳數為1~12為較佳,1~6為更佳,1~3為進一步較佳;重複數為1~50為較佳,1~40為更佳,1~30為進一步較佳)、伸芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)或其組合之連結基。ArR 可經由或不經由連結基L與LR1 、LR2 或PR 鍵結而形成環。Ar R is a linking group containing an aromatic ring. However, when nr is 0, Ar R is a substituent including an aromatic ring. As the aromatic ring, the aforementioned ring aCy or hCy is preferred. When Ar R contains a substituent other than an aromatic ring, examples of the linking group include the following linking group L. Among them, alkylene (carbon number of 1 to 24 is preferred, and 1 to 12 is more preferred. 1 to 6 are further preferred), alkenyl (2 to 12 carbons are preferred, 2 to 6 are more preferred, 2 to 3 are more preferred), and alkenyl (2 to 12 carbons are preferred) , 2 to 6 are more preferred, 2 to 3 are more preferred), (oligomeric) alkoxy (the number of carbons of the alkylene in one constituent unit is preferably 1 to 12, and 1 to 6 are More preferably, 1 to 3 are further preferred; repeating number is 1 to 50, more preferred is 1 to 40, more preferred is 1 to 30, further preferred is aryl (carbon number 6 to 22 is preferred, 6 to 18 are more preferred, and 6 to 10 are further preferred) or a combination thereof. R2 Ar R or P R L may be bonded to form a ring via or not via a linking group L and L R1,.
PR 為具有聚合性基團之基團,聚合性基團為上述聚合性基團Ps的例為較佳。PR 可經由或不經由連結基L與LR1 、LR2 鍵結而形成環。P R is a group having a polymerizable group, and an example in which the polymerizable group is the polymerizable group Ps is preferable. P R may form a ring by bonding to L R1 and L R2 with or without a linking group L.
LR1 、LR2 、ArR 、PR 在發揮本發明的效果之範圍內,可具有取代基T。例如,烷基、烯基、芳基、芳烷基等可進一步被鹵素原子(氟原子為較佳)取代。L R1 , L R2 , Ar R , and P R may have a substituent T as long as the effects of the present invention are exhibited. For example, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, and the like may be further substituted with a halogen atom (a fluorine atom is preferred).
nr為0~8的整數,0~6為較佳,0~4為更佳,0~2為進一步較佳。mr為1~4的整數,1~2為較佳。nr is an integer from 0 to 8, 0 to 6 is preferred, 0 to 4 is more preferred, and 0 to 2 is further preferred. mr is an integer of 1 to 4, and 1 to 2 is preferred.
作為Rr3 的2價的取代基,可舉出CH2 (下述第2實施形態)、CHRr8 或C(Rr9 )2 。其中,Rr8 及Rr9 分別獨立地為後述之取代基T,其中,烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、芳烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)為較佳。C(Rr9 )2 的2個Rr9 可彼此相同,亦可不同。 Examples of the divalent substituent of R r3 include CH 2 (second embodiment described below), CHR r8 or C (R r9 ) 2 . Among them, R r8 and R r9 are each independently a substituent T described later. Among them, alkyl (more preferably 1 to 12 carbons, more preferably 1 to 6 and even more preferably 1 to 3), alkenyl ( Carbon number 2 to 12 is preferred, 2 to 6 is more preferred, 2 to 3 is further preferred), alkynyl (carbon number 2 to 12 is preferred, 2 to 6 is more preferred, 2 to 3 is further preferred Good), aryl (6 to 22 carbons is preferred, 6 to 18 is more preferred, 6 to 10 is more preferred), aralkyl (7 to 23 carbons is preferred, 7 to 19 is more preferred) , 7 to 11 are further preferred) are more preferred. C (R r9) 2 th R r9 2 may be the same as each other or different.
作為包含雜原子之連結基Lh,可舉出氧原子、硫原子、羰基、硫羰基、磺醯基、亞磺醯基、-NRN -、(低聚)伸烷氧基(1個構成單元中的伸烷基的碳數為1~12為較佳,1~6為更佳,1~3為進一步較佳;重複數為1~50為較佳,1~40為更佳,1~30為進一步較佳)或由該等的組合而成之連結基。構成包含雜原子之連結基Lh之原子數除氫原子之外為1~100為較佳,1~70為更佳,1~50為特佳。Lh的連結原子數為1~25為較佳,1~20為更佳,1~15為進一步較佳,1~10為更進一步較佳。再者,(低聚)伸烷氧基可為伸烷氧基亦可為低聚伸烷氧基。上述(低聚)伸烷氧基可為鏈狀、環狀,亦可為直鏈、分支。連結基為-NRN- 或羧基被取代之情況等能夠形成鹽之基團時,該基團可形成鹽。Examples of the heteroatom-containing linking group Lh include an oxygen atom, a sulfur atom, a carbonyl group, a thiocarbonyl group, a sulfofluorenyl group, a sulfinylsulfenyl group, -NR N- , and (oligomeric) alkoxy group (1 constituent unit) The number of carbons in the alkylene group is preferably 1 to 12, 1 to 6 is more preferred, 1 to 3 is even more preferred; 1 to 50 is more preferred, 1 to 40 is more preferred, and 1 to 30 is further preferred) or a linking group formed by a combination of these. The number of atoms constituting the linking group Lh containing a hetero atom is preferably from 1 to 100, more preferably from 1 to 70, and particularly preferably from 1 to 50. The number of connected atoms of Lh is preferably from 1 to 25, more preferably from 1 to 20, even more preferably from 1 to 15, and even more preferably from 1 to 10. Furthermore, the (oligomeric) alkoxy group may be either an alkoxy group or an oligomeric alkoxy group. The (oligomeric) alkoxy group may be linear, cyclic, or linear or branched. When the linking group is a group capable of forming a salt such as -NR N- or a carboxyl group is substituted, the group may form a salt.
作為取代基T,可舉出烷基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、芳基烷基(碳數7~21為較佳,7~15為更佳,7~11為進一步較佳)、烯基(碳數2~24為較佳,2~12為更佳,2~6為進一步較佳)、炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、羥基、胺基(碳數0~24為較佳,0~12為更佳,0~6為進一步較佳)、硫醇基、羧基、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、烷氧基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、芳氧基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、醯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、醯氧基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳醯基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)、芳醯氧基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)、胺甲醯基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、胺磺醯基(碳數0~12為較佳,0~6為更佳,0~3為進一步較佳)、磺酸基、烷基磺醯基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、芳基磺醯基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、雜環基(碳數1~12為較佳,1~8為更佳,2~5為進一步較佳、包含5員環或6員環為較佳)、(甲基)丙烯醯基、(甲基)丙烯醯氧基、鹵素原子(例如,氟原子、氯原子、溴原子、碘原子)、氧代基(=O)、亞胺基(=NRN )、次烷基(=C(RN )2 )等。RN 為氫原子、烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳),烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、或芳烷基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳),其中,氫原子、甲基、乙基或丙基為較佳。各取代基上所含之烷基部位、烯基部位及炔基部位可為鏈狀、環狀,亦可為直鏈、分支。上述取代基T為能夠獲得取代基之基團時,還可具有取代基T。例如,烷基可成為鹵化烷基,亦可成為(甲基)丙烯醯氧基烷基、胺基烷基或羧基烷基。取代基為羧基或胺基等能夠形成鹽之基團時,該基團可形成鹽。Examples of the substituent T include an alkyl group (carbon number 1 to 24 is preferred, 1 to 12 is more preferred, and 1 to 6 is more preferred), and an arylalkyl group (carbon number 7 to 21 is preferred, 7 to 15 are more preferred, 7 to 11 are further preferred), alkenyl (2 to 24 carbons are preferred, 2 to 12 are more preferred, 2 to 6 are more preferred), alkynyl (2 to 6 carbons) -12 is preferred, 2-6 is more preferred, 2-3 is more preferred), hydroxyl and amine groups (carbon number 0-24 is preferred, 0-12 is more preferred, 0-6 is further preferred ), Thiol group, carboxyl group, aryl group (carbon number 6 to 22 is preferred, 6 to 18 is more preferred, 6 to 10 is more preferred), alkoxy (carbon number 1 to 12 is preferred, 1 ~ 6 is more preferable, 1-3 is more preferable), aryloxy group (carbon number is 6-22 is preferable, 6-18 is more preferable, 6-10 is more preferable), fluorenyl group (carbon number 2 -12 is preferred, 2-6 is more preferred, 2-3 is more preferred), oxo (carbon number 2-12 is preferred, 2-6 is more preferred, 2-3 is more preferred) Aryl fluorenyl (carbon number 7 to 23 is preferred, 7 to 19 is more preferred, 7 to 11 is more preferred), aryl fluorenyloxy (carbon number 7 to 23 is preferred, 7 to 1) 9 is more preferred, 7 to 11 are further preferred), carbamoyl (carbon number 1 to 12 is preferred, 1 to 6 is more preferred, 1 to 3 is further preferred), sulfamoyl (carbon Numbers 0 to 12 are preferred, 0 to 6 are more preferred, 0 to 3 are more preferred), sulfonic acid groups, and alkylsulfonyl groups (carbon numbers 1 to 12 are preferred, and 1 to 6 are more preferred. 1 to 3 are further preferred), arylsulfonyl (carbon number 6 to 22 is preferred, 6 to 18 is more preferred, 6 to 10 is more preferred), heterocyclic group (carbon number 1 to 12 is Preferably, 1 to 8 are more preferred, 2 to 5 are further preferred, and 5- or 6-membered rings are preferred), (meth) acrylfluorenyl, (meth) acrylfluorenyloxy, and halogen atoms (For example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom), an oxo group (= O), an imino group (= NR N ), an alkylene group (= C (R N ) 2 ), and the like. R N is a hydrogen atom, an alkyl group (carbon number 1 to 12 is preferred, 1 to 6 is more preferred, 1 to 3 is more preferred), an alkenyl group (carbon number 2 to 12 is preferred, 2 to 6 is More preferably, 2 to 3 are further preferred), alkenyl (2 to 12 carbons are preferred, 2 to 6 are more preferred, 2 to 3 are more preferred), and aryl (6 to 22 carbons are more preferred) 6 to 18 are more preferred, 6 to 10 are further preferred), or aralkyl (7 to 23 carbons are preferred, 7 to 19 are more preferred, 7 to 11 are further preferred), of which, A hydrogen atom, methyl, ethyl or propyl is preferred. The alkyl moiety, alkenyl moiety, and alkynyl moiety contained in each substituent may be chained, cyclic, or linear or branched. When the substituent T is a group capable of obtaining a substituent, it may further have a substituent T. For example, the alkyl group may be a halogenated alkyl group, or may be a (meth) acryloxyalkyl group, an aminoalkyl group, or a carboxyalkyl group. When the substituent is a group capable of forming a salt such as a carboxyl group or an amine group, the group may form a salt.
作為連結基L,可舉出伸烷基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、伸烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、伸炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、(低聚)伸烷氧基(1個構成單元中的伸烷基的碳數為1~12為較佳,1~6為更佳,1~3為進一步較佳;重複數為1~50為較佳,1~40為更佳,1~30為進一步較佳)、伸芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、氧原子、硫原子、磺醯基、羰基、硫羰基、-NRN- 及該等的組合之連結基。伸烷基可具有上述取代基T。例如,伸烷基可具有羥基。連結基L中所含之原子數除氫原子之外為1~50為較佳,1~40為更佳,1~30為進一步較佳。連結原子數係指參與連結之原子團中位於最短路程之原子數。例如,-CH2 -(C=O)-O-時,參與連結之原子為6個,除氫原子之外亦為4個。另一方面,參與連結之最短原子為-C-C-O-,成為3個。作為該連結原子數,1~24為較佳,1~12為更佳,1~6為進一步較佳。再者,上述伸烷基、伸烯基、伸炔基、(低聚)伸烷氧基可為鏈狀、環狀,亦可為直鏈、分支。連結基為-NRN -等能夠形成鹽之基團時,該基團可形成鹽。Examples of the linking group L include an alkylene group (carbon number 1 to 24 is preferred, 1 to 12 is more preferred, and 1 to 6 is more preferred), and an alkenyl group (carbon number 2 to 12 is more preferred. 2 to 6 is more preferred, 2 to 3 is further preferred), alkynyl (carbon number 2 to 12 is preferred, 2 to 6 is more preferred, 2 to 3 is further preferred), (oligomeric) stretching Alkoxy (The number of carbons of the alkylene group in one constituent unit is preferably 1 to 12, more preferably 1 to 6, more preferably 1 to 3, and the number of repeats is preferably 1 to 50, 1 -40 is more preferred, 1-30 is further preferred), arylene (carbon number 6-22 is preferred, 6-18 is more preferred, 6-10 is further preferred), oxygen atom, sulfur atom, Sulfonyl, carbonyl, thiocarbonyl, -NR N- and combinations of these. The alkylene group may have the above-mentioned substituent T. For example, the alkylene group may have a hydroxyl group. The number of atoms contained in the linking group L is preferably 1 to 50 other than a hydrogen atom, more preferably 1 to 40, and still more preferably 1 to 30. The number of connected atoms refers to the number of atoms in the shortest distance in the group of atoms participating in the connection. For example, when -CH 2- (C = O) -O-, the number of atoms participating in the connection is six, and in addition to hydrogen atoms, there are four. On the other hand, the shortest atom participating in the connection is -CCO-, which becomes three. The number of connecting atoms is preferably from 1 to 24, more preferably from 1 to 12, and even more preferably from 1 to 6. The above-mentioned alkylene, alkenyl, alkynyl, and (oligomeric) alkoxy may be linear, cyclic, or linear or branched. When the linking group is a group capable of forming a salt such as -NR N- , the group can form a salt.
脫離成分的分子量為210以上。分子量為該下限值以上,藉此烘烤中的揮發得到抑制從而較佳。脫離成分的分子量為210以上為較佳,250以上為更佳,300以上為進一步較佳。作為上限,實際上為1000以下。The molecular weight of the detached component is 210 or more. It is preferable that the molecular weight is equal to or more than the lower limit value, thereby suppressing volatilization during baking. The molecular weight of the detached component is preferably 210 or more, more preferably 250 or more, and more preferably 300 or more. The upper limit is actually 1000 or less.
脫離成分的表面張力為28mN/m以上為較佳,30mN/m以上為更佳,36mN/m以上為進一步較佳,38mN/m以上為更進一步較佳、40mN/m以上為還更進一步較佳、42mN/m以上為還更進一步較佳。作為上限,80mN/m以下為較佳,60mN/以下為更佳,50mN/m以下為進一步較佳。The surface tension of the detached component is preferably 28 mN / m or more, 30 mN / m or more is more preferable, 36 mN / m or more is more preferable, 38 mN / m or more is further preferable, and 40 mN / m or more is still more preferable. It is better that 42 mN / m or more is still more preferable. The upper limit is preferably 80 mN / m or less, more preferably 60 mN / m or less, and even more preferably 50 mN / m or less.
脫離成分的漢森溶解度參數(HSP)向量的:
(i)分散項成分(d成分)為14.0~20.0為較佳,15.0~19.0為更佳,16.0~19.5為進一步較佳;
(ii)極性項成分(p成分)為2.0~9.0為較佳,3.0~6.0為更佳,3.5~5.0為進一步較佳;
(iii)氫鍵項成分(h成分)為3.0~12.0為較佳,4.7~7.0為更佳,5.0~6.5為進一步較佳。The detached component of the Hanson solubility parameter (HSP) vector:
(I) The dispersion component (component d) is preferably from 14.0 to 20.0, more preferably from 15.0 to 19.0, and even more preferably from 16.0 to 19.5;
(Ii) The polar component (p component) is preferably 2.0 to 9.0, more preferably 3.0 to 6.0, and more preferably 3.5 to 5.0;
(Iii) The hydrogen bonding term component (component h) is preferably 3.0 to 12.0, more preferably 4.7 to 7.0, and even more preferably 5.0 to 6.5.
<<特定的聚合物>>
關於在本發明中使用之聚合物(以下,有時將該聚合物稱作特定的聚合物),使包含該特定的聚合物之壓印用下層膜形成組成物成為膜狀並在80~250℃下烘烤時,能夠廣泛使用使脫離成分從聚合物脫離之聚合物。更具體而言,特定的聚合物為在側鏈具有成為脫離成分之基團之聚合物為較佳。
在本發明中,構成聚合物之所有構成單元中的較佳為30質量%以上、更佳為40質量%以上能夠使脫離成分脫離的構成單元。上限值並無特別限定,可為100質量%。再者,本發明中,無需使具有能夠使脫離成分脫離的基團之構成單元在80~250℃的加熱下全部脫離,只要至少脫離70質量%即可,脫離80質量%以上為較佳,脫離90質量%以上為進一步較佳,脫離99質量%以上為更進一步較佳。
又,本發明中,使特定的聚合物的質量的較佳為20質量%以上、更佳為30質量%以上、進一步較佳為50質量%以上的脫離成分脫離。上限值並無特別限定,但是,例如為80質量%以下,70質量%以下為較佳,60質量%以下為更佳,50質量%以下為進一步較佳。
特定的聚合物包含由下述式(R-1)~(R-4)中的任一個表示之取代基為較佳。
[化學式9]
<< specific polymer >>
Regarding the polymer used in the present invention (hereinafter, this polymer may be referred to as a specific polymer), the underlayer film-forming composition for imprint containing the specific polymer is formed into a film shape at 80 to 250. When baking at ℃, a polymer that releases a releasing component from a polymer can be widely used. More specifically, it is preferable that the specific polymer is a polymer having a group serving as a release component in a side chain.
In the present invention, among all the constituent units constituting the polymer, 30% by mass or more is more preferable, and 40% by mass or more is a constitutional unit capable of releasing the detached component. The upper limit value is not particularly limited, and may be 100% by mass. Furthermore, in the present invention, it is not necessary to remove all the constituent units having a group capable of detaching a component under heating at 80 to 250 ° C., as long as it is at least 70% by mass, and preferably 80% by mass or more, It is more preferable to depart from 90% by mass or more, and it is more preferable to depart from 99% by mass or more.
In the present invention, the mass of the specific polymer is preferably 20% by mass or more, more preferably 30% by mass or more, and still more preferably 50% by mass or more of the detached component. The upper limit value is not particularly limited, but is, for example, 80% by mass or less, 70% by mass or less is preferable, 60% by mass or less is more preferable, and 50% by mass or less is more preferable.
The specific polymer preferably contains a substituent represented by any one of the following formulae (R-1) to (R-4).
[Chemical Formula 9]
式中,R1 ~R3 分別獨立地為1價的取代基,R4 ~R12 分別獨立地為氫原子或1價的取代基,X表示向聚合物的主鏈鍵結之位置。In the formula, R 1 to R 3 are each independently a monovalent substituent, R 4 to R 12 are each independently a hydrogen atom or a monovalent substituent, and X represents a position to be bonded to the polymer's main chain.
在式(R-2)~(R-4)中,R4 ~R6 、R7 ~R9 、R10 ~R12 不均為氫原子為較佳。包含與式(R-1)中的氧原子鍵結之碳原子、亦即R1 ~R3 被取代之碳原子(以下,在各式中將該位置的碳原子稱作α碳原子)之基團為二級烷基或三級烷基為較佳。在式(R-2)中亦相同,包含α碳原子之基團為二級烷基或三級烷基為較佳。與此不同,包含式(R-3)及(R-4)中的α碳原子之基團為一級烷基或二級烷基為較佳。In the formulae (R-2) to (R-4), it is preferable that R 4 to R 6 , R 7 to R 9 , and R 10 to R 12 are not all hydrogen atoms. Contains a carbon atom bonded to an oxygen atom in the formula (R-1), that is, a carbon atom in which R 1 to R 3 are substituted (hereinafter, the carbon atom at this position is referred to as an α carbon atom in each formula) The group is preferably a secondary alkyl group or a tertiary alkyl group. The same applies to the formula (R-2), and it is preferable that the group containing an α carbon atom is a secondary alkyl group or a tertiary alkyl group. In contrast, it is preferable that the group containing the α carbon atom in the formulae (R-3) and (R-4) is a primary alkyl group or a secondary alkyl group.
R1
~R3
的至少1個係取代基為較佳,至少2個係取代基為較佳。R4
~R6
的至少1個係取代基為較佳,至少2個係取代基為較佳。R7
~R9
的至少1個係取代基為較佳,2個係氫原子且1個係取代基為較佳。R10
~R12
的至少1個係取代基為較佳,2個係氫原子且1個係取代基為較佳。R1
~R3
、R4
~R6
、R7
~R9
、R10
~R12
為取代基時,作為該取代基,可舉出與上述Rr1
相同含義的基團,較佳範圍亦相同。
R1
~R3
、R4
~R6
、R7
~R9
、R10
~R12
可相互鍵結而形成環。R1
~R12
為取代基時,在發揮本發明的效果之範圍內,可進一步具有取代基T。例如,烷基、烯基、芳基、芳烷基等可進一步被鹵素原子(氟原子為較佳)取代。At least one substituent of R 1 to R 3 is preferable, and at least two substituents are more preferable. At least one substituent of R 4 to R 6 is preferable, and at least two substituents are more preferable. At least one of R 7 to R 9 is preferably a substituent, two is a hydrogen atom, and one is a substituent. At least one of R 10 to R 12 is preferably a substituent, two is a hydrogen atom, and one is a substituent. When R 1 to R 3 , R 4 to R 6 , R 7 to R 9 , R 10 to R 12 are substituents, examples of the substituent include groups having the same meaning as in the above-mentioned R r1 , and the preferred range is also the same.
R 1 to R 3 , R 4 to R 6 , R 7 to R 9 , and R 10 to R 12 may be bonded to each other to form a ring. When R 1 to R 12 are substituents, they may further have a substituent T within the range in which the effects of the present invention are exhibited. For example, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, and the like may be further substituted with a halogen atom (a fluorine atom is preferred).
本發明中,式中的C-O鍵從包含由式(R-1)~(R-4)中的任一個表示之取代基之聚合物分解,由式(r1)或(r2)或者式(r1-1)表示且分子量210以上的化合物從該聚合物脫離為較佳。
尤其,式(r1)的Rr1
及Rr2
被取代之碳原子(將Rr3
中所含之碳原子設為1位時2位的碳原子)在脫離前係式(R-1)的R1
~R3
被取代之碳原子(α碳原子)為較佳。又,式(r1)的上述2位的碳原子在脫離前係式(R-2)的R4
~R6
被取代之碳原子為較佳。關於式(r2),Rr4
~Rr6
被取代之三級碳原子在脫離前係上述各α碳原子亦即式(R-1)的R1
~R3
被取代之碳原子或式(R-2)的R4
~R6
被取代之碳原子為較佳。In the present invention, the CO bond in the formula is decomposed from a polymer containing a substituent represented by any one of formulae (R-1) to (R-4), and is represented by formula (r1) or (r2) or formula (r1) It is preferable that the compound represented by -1) has a molecular weight of 210 or more to be released from the polymer.
In particular, the carbon atoms substituted by R r1 and R r2 in the formula (r1) (the carbon atoms in the second position when the carbon atom contained in R r3 is set to the first position) are separated from the R of the previous formula (R-1) 1 to R 3 are preferably substituted carbon atoms (α carbon atoms). The carbon atom at the 2-position of the formula (r1) is preferably a carbon atom substituted with R 4 to R 6 before the formula (R-2). Regarding formula (r2), the tertiary carbon atoms substituted by R r4 to R r6 are the above-mentioned α carbon atoms before leaving, that is, the substituted carbon atoms of R 1 to R 3 of formula (R-1) or formula (R -2) A carbon atom in which R 4 to R 6 are substituted is preferred.
在式(R-1)中,以在C-O的位置分解,且在脫離成分側的脫離位置(α碳原子的位置)形成雙鍵的方式,R1 ~R3 中的至少1個係烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳,乙基為更佳,甲基為進一步較佳。在式(R-2)中亦相同,R4 ~R6 中的至少1個係烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)為較佳,乙基為更佳,甲基為進一步較佳。In the formula (R-1), at least one of R 1 to R 3 is an alkyl group so that it is decomposed at the position of CO and a double bond is formed at a detached position (position of an α carbon atom) on the component side. (The carbon number is 1-12, more preferred is 1-6, and further preferred is 1-3) is preferred, ethyl is more preferred, and methyl is more preferred. The same applies to formula (R-2). At least one of R 4 to R 6 is an alkyl group (carbon number 1 to 12 is more preferable, 1 to 6 is more preferable, and 1 to 3 is more preferable). Preferably, ethyl is more preferred, and methyl is further preferred.
又,特定的聚合物包含聚合性基團為較佳,聚合性基團係聚合性基團Ps為較佳,包含(甲基)丙烯醯基為更佳。可以由具有能夠使脫離成分脫離的基團之構成單元具有聚合性基團,亦可以由其他構成單元具有聚合性基團。本發明中,至少是除具有能夠使脫離成分脫離的基團之構成單元之外的構成單元具有聚合性基團為較佳。
在特定的聚合物中,具有聚合性基團之構成單元的比例為所有構成單元的10~100莫耳%為較佳,50~100莫耳%為更佳,80~100莫耳%為進一步較佳。The specific polymer preferably contains a polymerizable group, the polymerizable group-based polymerizable group Ps is more preferable, and the (meth) acrylfluorenyl group is more preferable. The structural unit having a group capable of detaching the detached component may have a polymerizable group, or the other structural unit may have a polymerizable group. In the present invention, it is preferred that the constituent units other than the constituent units having a group capable of detaching the detached component have a polymerizable group.
In a specific polymer, the proportion of constituent units having a polymerizable group is preferably 10 to 100 mole% of all constituent units, more preferably 50 to 100 mole%, and more preferably 80 to 100 mole%. Better.
又,特定的聚合物包含芳香環為較佳,芳香環為環aCy或hCy為較佳。可以由具有能夠使脫離成分脫離的基團之構成單元具有芳香環,亦可以由其他構成單元具有芳香環。本發明中,至少是具有能夠使脫離成分脫離的基團之構成單元具有芳香環為較佳。
在特定的聚合物中,包含芳香環之構成單元的比例為所有構成單元的10~100莫耳%為較佳,40~100莫耳%為更佳。In addition, the specific polymer preferably includes an aromatic ring, and the aromatic ring is preferably aCy or hCy. An aromatic ring may be sufficient as the structural unit which has a group which can isolate | separate a detachment component, and an aromatic ring may be provided as another structural unit. In the present invention, it is preferable that the constituent unit having at least a group capable of detaching the detached component has an aromatic ring.
In a specific polymer, the proportion of the constituent units including an aromatic ring is preferably 10 to 100 mol%, and more preferably 40 to 100 mol%.
特定的聚合物的種類並無特別限定,但是,例如,可舉出(甲基)丙烯酸酯樹脂、聚烯烴樹脂、聚苯乙烯樹脂、酚樹脂(酚醛清漆樹脂)、環狀聚烯烴樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚縮醛樹脂、聚碳酸酯樹脂、聚酯樹脂、聚胺酯樹脂及聚矽氧樹脂等。The type of the specific polymer is not particularly limited, but examples thereof include (meth) acrylate resin, polyolefin resin, polystyrene resin, phenol resin (novolac resin), cyclic polyolefin resin, and polymer Resin resin, polyimide resin, polyacetal resin, polycarbonate resin, polyester resin, polyurethane resin, and silicone resin.
特定的聚合物包含由下述式(1)~式(6)中任一個表示之構成單元中的至少1種為進一步較佳。
[化學式10]
It is more preferable that the specific polymer contains at least one of the constituent units represented by any one of the following formulae (1) to (6).
[Chemical Formula 10]
RP4
為氫原子或甲基。
RP1
表示能夠使由式(r1)或(r2)表示之化合物或由式(r1-1)表示之化合物脫離的基團,包含由式(R-1)~(R-4)表示之基團之基團為較佳。在RP1
中,連結基可介於式(R-1)~(R-4)的X與主鏈的原子之間。作為連結基可舉出連結基L的例。再者,此時的連結基可為3價以上。該情況下,成為聚合物的構成單元經由連結基伴有複數個由式(R-1)~(R-4)表示之基團。作為3價以上的連結基,可舉出芳香環(aCy、hCy)結構的基團、烷烴結構的基團(碳數1~40為較佳,1~30為更佳,1~20為進一步較佳)、烯烴結構的基團(碳數2~40為較佳,2~30為更佳,2~20為進一步較佳)、炔烴結構的基團(碳數2~40為較佳,2~30為更佳,2~20為進一步較佳)或該等的組合之基團或者該等與連結基Lh的組合之基團。烷烴結構的基團、烯烴結構的基團、炔烴結構的基團可為鏈狀、環狀,亦可為直鏈、分支。以下將該3價以上的連結基稱作連結基Lm。R P4 is a hydrogen atom or a methyl group.
R P1 represents a group capable of removing a compound represented by the formula (r1) or (r2) or a compound represented by the formula (r1-1), and includes a group represented by the formulae (R-1) to (R-4) The group of the group is preferable. In R P1 , the linking group may be between X in the formulae (R-1) to (R-4) and an atom in the main chain. Examples of the linking group include a linking group L. The linking group at this time may be trivalent or higher. In this case, the structural unit that becomes the polymer is accompanied by a plurality of groups represented by the formulae (R-1) to (R-4) via a linking group. Examples of the trivalent or higher linking group include a group having an aromatic ring (aCy, hCy) structure and a group having an alkane structure (carbon numbers of 1 to 40 are preferred, 1 to 30 are more preferred, and 1 to 20 are further preferred. Preferred), groups with olefin structure (2 to 40 carbons are preferred, 2 to 30 are more preferred, 2 to 20 are more preferred), groups with alkyne structure (2 to 40 carbons are preferred) 2 to 30 are more preferred, and 2 to 20 are further preferred) or a combination of these or a combination of these and a linking group Lh. The group of an alkane structure, the group of an olefin structure, and the group of an alkyne structure may be chained, cyclic, or linear or branched. This trivalent or higher linking group is hereinafter referred to as the linking group Lm.
式(1)~式(6)中,取代基RP1 在相同的構成單元可被取代2個以上。例如,在式(1)、(2)中,在苯環上2個以上的RP1 被取代者亦可作為本發明的較佳實施形態而舉出。In formulas (1) to (6), two or more substituents R P1 may be substituted in the same constitutional unit. For example, in formulae (1) and (2), those in which two or more R P1 are substituted on a benzene ring can also be cited as a preferred embodiment of the present invention.
式(1)~(6)中的聚合物的主鏈及取代基RP1 在發揮本發明的效果之範圍內可具有取代基T。The main chain and the substituent R P1 of the polymer in the formulae (1) to (6) may have a substituent T as long as the effect of the present invention is exhibited.
上述特定的聚合物係共聚物亦較佳。共聚成分包含由下述式(1-1)~(1-6)中的任一個表示之構成單元(以下,有時稱作其他構成單元)的至少一種為較佳。
[化學式11]
式(1-1)~式(1-6)中,取代基RP 2
分別獨立地為包含聚合性基團之取代基,RP4
為氫原子或甲基。RP2
中所含之聚合性基團係上述Ps為較佳。RP2
可在聚合性基團與主鏈之間伴有連結基,2價的連結基時可舉出連結基L的例,3價以上的連結基時可舉出連結基Lm的例。式(1-1)~式(1-6)中的RP 2
為2個以上時,亦即成為(RP 2
)n
(n為1以上的自然數)時,複數個RP 2
可相互鍵結而形成環。又,RP2
可與主鏈鍵結而形成環。又,在發揮本發明的效果之範圍內,在式(1-1)~式(1-6)的主鏈及取代基RP2
上,取代基T可被取代。
作為RP 2
,下述式(T2)為較佳。RP2
的式量為80以上且1000以下為較佳,100以上且800以下為更佳,150以上且600以下為進一步較佳。
-(L4)n6
-(P)n7
……(T2)
L4
為上述連結基L或Lm,其中,伸烷基、伸芳基、(低聚)伸烷氧基、羰基、氧原子、烷烴結構的基團、烯烴結構的基團、芳基結構的基團、該等的組合之連結基為較佳。n6為0~6的整數。P為聚合性基團Ps。n7為1~6的整數,1或2為較佳。再者,n7為3以上時,末端的L4
成為4價以上的連結基且所有的P可被取代,但亦可在2個以上的L4
取代P。
特定的聚合物包含由式(1)表示之構成單元時,作為其他構成單元,由式(1-1)表示之構成單元為較佳。關於式(2)~式(6),亦同樣地分別包含由式(1-2)~式(1-6)表示之構成單元為較佳。The specific polymer-based copolymers described above are also preferable. The copolymerization component preferably includes at least one of a constituent unit (hereinafter, sometimes referred to as another constituent unit) represented by any one of the following formulae (1-1) to (1-6).
[Chemical Formula 11]
In the formulae (1-1) to (1-6), the substituents R P 2 are each independently a substituent containing a polymerizable group, and R P4 is a hydrogen atom or a methyl group. The polymerizable group contained in R P2 is preferably the aforementioned Ps. R P2 may have a linking group between the polymerizable group and the main chain. Examples of the linking group L include a divalent linking group, and examples of the linking group Lm include a linking group having a trivalent or higher linking group. When there are two or more R P 2 in the formulas (1-1) to (1-6), that is, when (R P 2 ) n (n is a natural number of 1 or more), a plurality of R P 2 may be Bond to each other to form a ring. R P2 may be bonded to the main chain to form a ring. Further, within the range where the effects of the present invention are exerted, the substituent T may be substituted on the main chain of the formulae (1-1) to (1-6) and the substituents R P2 .
As R P 2 , the following formula (T2) is preferred. The formula of R P2 is more preferably 80 or more and 1000 or less, more preferably 100 or more and 800 or less, and more preferably 150 or more and 600 or less.
-(L4) n6- (P) n7 ... (T2)
L 4 is the above-mentioned linking group L or Lm, in which an alkylene group, an arylene group, an (oligomeric) alkoxy group, a carbonyl group, an oxygen atom, a group of an alkane structure, a group of an olefin structure, or a group of an aryl structure Groups and combinations of these are preferred. n6 is an integer from 0 to 6. P is a polymerizable group Ps. n7 is an integer of 1 to 6, and 1 or 2 is preferable. When n7 is 3 or more, the terminal L 4 becomes a tetravalent or more valent linking group and all P may be substituted, but P may be substituted by two or more L 4 .
When a specific polymer contains the structural unit represented by Formula (1), as another structural unit, the structural unit represented by Formula (1-1) is preferable. Regarding formulas (2) to (6), it is also preferable to include constituent units represented by formulas (1-2) to (1-6), respectively.
特定的聚合物還包含沒有聚合性基團之構成單元(有時稱作“另一其他構成單元”)亦較佳。另一其他構成單元具有在上述其他構成單元中規定之式(1-1)~(1-6)的骨架為較佳。其中,取代基RP2
成為沒有聚合性基團的取代基RP3
。作為另一其他構成單元之式(1-1)、(1-2)、(1-4)、(1-6)中的RP2
的2個以上可被取代為環結構基團。再者,另一其他構成單元中,在發揮本發明的效果之範圍內可在其主鏈的部分及RP3
取代取代基T。
RP3
係下述式(T3)為較佳。RP3
的式量為80以上且1000以下為較佳,100以上且800以下為更佳,150以上且600以下為進一步較佳。
-(L5)n8
-(T1)n9
……(T3)
L5
為上述連結基L或Lm,其中,伸烷基、伸芳基、(低聚)伸烷氧基、羰基、氧原子、烷烴結構的基團、烯烴結構的基團、芳基結構的基團、該等的組合之連結基為較佳。T1
為上述取代基T,例如可舉出烷基、芳基、烷氧基、醯基等。n9為1~6的整數,1或2為較佳。n9為3以上時,末端的L5
成為4價以上的連結基且所有的T1
可被取代,但亦可在2個以上的L5
取代T1
。It is also preferable that the specific polymer further includes a constitutional unit (sometimes referred to as "another constitutional unit") having no polymerizable group. It is preferable that the other structural unit has a skeleton of the formulae (1-1) to (1-6) specified in the other structural unit. However, the substituent R P2 is a substituent R P3 having no polymerizable group. As another other constituent unit, two or more of R P2 in the formulae (1-1), (1-2), (1-4), and (1-6) may be substituted as a ring structure group. Furthermore, in another other constitutional unit, the substituent T may be substituted in a part of the main chain and R P3 within the range where the effect of the present invention is exhibited.
R P3 is preferably the following formula (T3). The formula of R P3 is more preferably 80 or more and 1000 or less, more preferably 100 or more and 800 or less, and more preferably 150 or more and 600 or less.
-(L5) n8- (T1) n9 ... (T3)
L 5 is the above-mentioned linking group L or Lm, in which an alkylene group, an arylene group, an (oligomeric) alkoxy group, a carbonyl group, an oxygen atom, a group of an alkane structure, a group of an olefin structure, or a group of an aryl structure Groups and combinations of these are preferred. T 1 is the above-mentioned substituent T, and examples thereof include an alkyl group, an aryl group, an alkoxy group, and a fluorenyl group. n9 is an integer of 1 to 6, and 1 or 2 is preferable. When n9 is 3 or more, L 5 end becomes more tetravalent linking group and all may be substituted with a T 1, T 1 but may be replaced by two or more of L 5.
在式T2,T3中,L4 、L5 、P、T1 在發揮本發明的效果之範圍內可具有上述取代基T。例如,烷烴結構的基團、烯烴結構的基團、芳基結構的基團等可進一步被鹵素原子(氟原子為較佳)取代。In the formulas T2 and T3, L 4 , L 5 , P, and T 1 may have the above-mentioned substituent T as long as the effects of the present invention are exhibited. For example, a group having an alkane structure, a group having an olefin structure, a group having an aryl structure, and the like may be further substituted with a halogen atom (a fluorine atom is preferred).
在特定的聚合物中,由式(1)~式(6)中的任一個表示之構成單元可構成整個聚合物(構成比率100莫耳%的均聚物),亦可成為與其他構成單元或另一其他構成單元的共聚物。In the specific polymer, the structural unit represented by any one of the formulae (1) to (6) may constitute the entire polymer (a homopolymer having a composition ratio of 100 mole%), or may be a unit with other structural units. Or a copolymer of another constituent unit.
在特定的聚合物中,以莫耳比基準計,具有能夠將脫離成分脫離的基團之構成單元(例如,由式(1)~式(6)表示之構成單元)/其他構成單元(具有聚合性基團之構成單元)/另一其他構成單元的構成比率為10~100/0~80/0~50為較佳,30~100/0~70/0~30為更佳,50~100/0~50/0~10為更較佳,可為50~90/10~50/0~10。
在特定的聚合物中,可分別僅包含1種或2種以上具有能夠將脫離成分脫離的基團之構成單元、其他構成單元(具有聚合性基團之構成單元)、另一其他構成單元。包含2種以上時,總計成為上述比例為較佳。
又,本發明中,在設為實際上不包含具有能夠將脫離成分脫離的基團之構成單元及除具有聚合性基團之構成單元之外的另一其他構成單元之結構亦較佳。實際上不包含係指例如為所有構成單元的5質量%以下,3質量%以下為較佳,1質量%以下為進一步較佳。In a specific polymer, a constituent unit (for example, a constituent unit represented by formula (1) to formula (6)) having a group capable of detaching a detached component based on a molar ratio (other than a constituent unit having The constituent ratio of the polymerizable group) / another constituent unit is preferably 10 to 100/0 to 80/0 to 50, more preferably 30 to 100/0 to 70/0 to 30, and 50 to 100/0 to 50/0 to 10 is more preferable, and 50 to 90/10 to 50/0 to 10 may be used.
The specific polymer may include only one kind or two or more kinds of constituent units having a group capable of detaching a detached component, other constituent units (constituent units having a polymerizable group), and another constituent unit. When two or more kinds are included, it is preferable that the total ratio is the above ratio.
In addition, in the present invention, it is also preferable to adopt a structure that does not substantially include a structural unit having a group capable of detaching a detached component and a structural unit other than a structural unit having a polymerizable group. In fact, it does not mean, for example, that it is 5 mass% or less of all the constituent units, 3 mass% or less is more preferable, and 1 mass% or less is more preferable.
特定聚合物的重量平均分子量為4,000以上為較佳,5,000以上為更佳,7,000以上為進一步較佳,10,000以上為更較佳。作為上限,2,000,000以下為較佳,1,500,000以下為更佳,1,000,000以下為進一步較佳。重量平均分子量的測量方法設為藉由由下述實施例表示之方法者。The weight average molecular weight of the specific polymer is preferably 4,000 or more, more preferably 5,000 or more, even more preferably 7,000 or more, and even more preferably 10,000 or more. As an upper limit, it is preferably below 2,000,000, more preferably below 1,500,000, and even more preferably below 1,000,000. The measurement method of the weight average molecular weight is a method represented by the following example.
壓印用下層膜形成組成物中的特定聚合物的含有率為0.1質量%以上為較佳,0.5質量%以上為更佳,1.0質量%以上為進一步較佳,1.5質量%以上為更較佳。作為上限,10質量%以下為較佳,7質量%以下為更佳,5質量%以下為進一步較佳,4質量%以下為更較佳,3質量%以下為進一步更較佳。藉由將該量設為上述下限值以上,能夠適當地發揮基於摻合聚合物而引起之效果,又,容易製作均勻的薄膜。另一方面,設為上述上限值以下,藉此適當地發揮使用溶劑之效果,容易在較寬的面積上形成均勻的膜。
又,特定的聚合物相對於壓印用下層膜形成組成物中的不揮發性成分(係指除組成物中的溶劑之固體成分)之含有率為90質量%以上為較佳,95質量%以上為更佳,99質量%以上為進一步較佳。作為上限值,為100質量%。藉由將該量設為上述下限值以上,能夠適當地發揮基於摻合聚合物而引起之效果,又,容易製作均勻的薄膜。另一方面,設為上述上限值以下,藉此適當地發揮使用溶劑之效果,容易在較寬的面積上形成均勻的膜。
特定聚合物可以僅使用1種,亦可使用2種以上。使用2種以上時,總計量成為上述範圍為較佳。The content of the specific polymer in the underlayer film-forming composition for imprinting is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, more preferably 1.0% by mass or more, and more preferably 1.5% by mass or more . As an upper limit, 10% by mass or less is preferable, 7% by mass or less is more preferable, 5% by mass or less is further preferable, 4% by mass or less is more preferable, and 3% by mass or less is further more preferable. By setting the amount to be equal to or more than the above-mentioned lower limit value, the effect due to the polymer blend can be appropriately exhibited, and a uniform film can be easily produced. On the other hand, by setting it to the above-mentioned upper limit value or less, the effect of using a solvent is appropriately exhibited, and a uniform film is easily formed over a wide area.
In addition, the content of the specific polymer with respect to the nonvolatile component (referring to the solid content of the solvent in the composition) in the underlayer film-forming composition for imprint is preferably 90% by mass or more, and 95% by mass The above is more preferable, and more than 99% by mass is more preferable. The upper limit is 100% by mass. By setting the amount to be equal to or more than the above-mentioned lower limit value, the effect due to the polymer blend can be appropriately exhibited, and a uniform film can be easily produced. On the other hand, by setting it to the above-mentioned upper limit value or less, the effect of using a solvent is appropriately exhibited, and a uniform film is easily formed over a wide area.
The specific polymer may be used alone or in combination of two or more. When two or more kinds are used, it is preferable that the total measurement falls within the above range.
在上述聚合物中,形成脫離成分之取代基RP1 能夠藉由常規方法導入主鏈。In the above-mentioned polymer, the substituent R P1 forming a release component can be introduced into the main chain by a conventional method.
<<脫離反應促進劑或其前驅物>>
脫離反應促進劑係藉由在系統內與特定的聚合物共存,從而藉由既定的契機作用於特定的聚合物,而促進將脫離成分從特定的聚合物脫離的反應之化合物。脫離反應促進劑係具有酸性官能基團或具有鹼性官能基團之化合物。脫離反應促進劑在組成物中作為其前驅物存在為較佳。作為前驅物,例如,可舉出藉由賦予熱或光等來自外部的能量進行反應,而轉換成脫離反應促進劑化合物之化合物。具體而言,可舉出熱酸產生劑、光酸產生劑、熱鹼產生劑、光鹼產生劑等,熱酸產生劑、光酸產生劑為較佳,熱酸產生劑為更佳。
作為脫離反應促進劑,具有酸性官能基團時,脫離促進劑的pKa為2以下為較佳,1以下為更佳,0以下為進一步較佳。作為下限值,並無特別限定,但是,例如可為-10以上。具有鹼性官能基團時,其共軛酸的pKa為5以上為較佳,7以上為更佳,8以上為進一步較佳。作為上限值,並無特別限定,但是,例如可為15以下。
本發明中,作為脫離反應促進劑或其前驅物的具體例,能夠使用日本特開2014-047329號公報的0012、0017、0026~0037段中記載的酸增殖劑、0038~0040中記載的光酸產生劑、0041段中記載的熱酸產生劑、日本特開2012-237776號公報的0029~0066段中記載的光鹼增殖劑、0073~0087段中記載的光鹼產生劑、0087~0090段中記載的熱鹼產生劑、日本專利第5687442號公報的0012~0015、0023~0029段中記載的光酸產生劑、國際公開第2009/123122號的0033~0075段中記載的鹼產生劑、日本特開2011-236416號公報的0038~0069中記載的鹼產生劑,該等內容編入本說明書中。<<< Separation reaction accelerator or its precursor >>
A release reaction promoter is a compound that promotes the reaction of detaching a detached component from a specific polymer by coexisting with a specific polymer in the system and acting on a specific polymer by a predetermined opportunity. The release reaction promoter is a compound having an acidic functional group or a basic functional group. It is preferred that the release reaction promoter is present as a precursor in the composition. Examples of the precursor include compounds that are converted into a deactivation-reaction promoter compound by reacting with external energy such as heat or light. Specific examples include thermal acid generators, photoacid generators, thermal base generators, and photobase generators. Thermal acid generators and photoacid generators are preferred, and thermal acid generators are more preferred.
When the release reaction accelerator has an acidic functional group, the pKa of the release accelerator is preferably 2 or less, more preferably 1 or less, and even more preferably 0 or less. The lower limit value is not particularly limited, but may be, for example, -10 or more. When having a basic functional group, the pKa of the conjugate acid is preferably 5 or more, more preferably 7 or more, and more preferably 8 or more. The upper limit value is not particularly limited, but may be, for example, 15 or less.
In the present invention, as specific examples of the release reaction accelerator or its precursor, the acid proliferation agents described in Japanese Patent Application Laid-Open No. 2014-047329, paragraphs 0012, 0017, 0026 to 0037, and light described in 0038 to 0040 can be used Acid generator, thermal acid generator described in paragraph 0041, photobase multiplication agent described in paragraphs 0029 to 0066 of JP 2012-237776, photobase generator described in paragraphs 0073 to 0087, and 0087 to 0090. The hot alkali generators described in paragraphs, the photo acid generators described in paragraphs 0012 to 0015 and 023 to 0029 of Japanese Patent No. 5876442, and the alkali generators described in paragraphs 0033 to 0075 of international publication 2009/123122. The alkali generators described in Japanese Patent Application Laid-Open No. 2011-236416 Nos. 0038 to 0069 are incorporated into this specification.
脫離反應促進劑或其前驅物的含量為不揮發性成分的0.1質量%以上為較佳,1.0質量%以上為更佳,2.0質量%以上為進一步較佳。作為上限,實際上為10.0質量%以下,可為5.0質量%以下。
脫離反應促進劑或其前驅物可僅使用1種,亦可使用2種以上。使用2種以上時,總計量成為上述範圍為較佳。The content of the release reaction accelerator or its precursor is preferably 0.1% by mass or more of the nonvolatile component, more preferably 1.0% by mass or more, and even more preferably 2.0% by mass or more. The upper limit is actually 10.0% by mass or less, and may be 5.0% by mass or less.
As the deactivation accelerator or its precursor, only one species may be used, or two or more species may be used. When two or more kinds are used, it is preferable that the total measurement falls within the above range.
<<伸烷基二醇化合物>>
壓印用下層膜形成組成物可以包含伸烷基二醇化合物。伸烷基二醇化合物具有3~1000個伸烷基二醇構成單元為較佳,具有4~500個為更佳,具有5~100個為進一步較佳,具有5~50個為更較佳。伸烷基二醇化合物的重量平均分子量(Mw)為150~10000為較佳,200~5000為更佳,300~3000為進一步較佳,300~1000為更較佳。
伸烷基二醇化合物例示有聚乙二醇、聚丙二醇、該等單或二甲基醚、單或二辛基醚、單或二壬醚、單或二癸醚、單硬脂酸酯、單有酸酯、單己二酸酯、單琥珀酸酯,聚乙二醇、聚丙二醇為較佳。
伸烷基二醇化合物在23℃下的表面張力為38.0mN/m以上為較佳,40.0mN/m以上為更佳。表面張力的上限並無特別限定,例如為48.0mN/m以下。藉由摻合如上化合物,能夠提高設置在下層膜正上方之壓印用硬化性組成物的潤濕性。<<< Alkanyl glycol compound >>
The underlayer film-forming composition for imprint may include an alkylene glycol compound. The alkylene glycol compound preferably has 3 to 1,000 alkylene glycol constituent units, more preferably 4 to 500 units, more preferably 5 to 100 units, and even more preferably 5 to 50 units. . The weight average molecular weight (Mw) of the alkylene glycol compound is preferably from 150 to 10,000, more preferably from 200 to 5,000, more preferably from 300 to 3,000, and even more preferably from 300 to 1,000.
The alkylene glycol compound is exemplified by polyethylene glycol, polypropylene glycol, such mono- or dimethyl ethers, mono- or dioctyl ether, mono- or dinonyl ether, mono- or didecyl ether, monostearate, Monoesters, monoadipates, and monosuccinates are preferred. Polyethylene glycol and polypropylene glycol are preferred.
The surface tension of the alkylene glycol compound at 23 ° C is preferably 38.0 mN / m or more, and more preferably 40.0 mN / m or more. The upper limit of the surface tension is not particularly limited, and is, for example, 48.0 mN / m or less. By blending the compounds as described above, the wettability of the hardening composition for imprint provided directly above the lower film can be improved.
當含有伸烷基二醇化合物時,為不揮發性成分的40質量%以下,30質量%以下為較佳,20質量%以下為更佳,1~15質量%為進一步較佳。
伸烷基二醇化合物可僅使用1種,亦可使用2種以上。使用2種以上時,總計量成為上述範圍為較佳。When the alkylene glycol compound is contained, it is 40% by mass or less of the nonvolatile component, 30% by mass or less is preferable, 20% by mass or less is more preferable, and 1 to 15% by mass is further more preferable.
The alkylene glycol compound may be used alone or in combination of two or more. When two or more kinds are used, it is preferable that the total measurement falls within the above range.
<<聚合起始劑>>
作為不揮發性成分,可包含聚合起始劑。作為聚合起始劑,可舉出熱聚合起始劑或光聚合起始劑等,但從提高與壓印用硬化性組成物的交聯反應性之觀點而言,光聚合起始劑為較佳。作為光聚合起始劑,自由基聚合起始劑、陽離子聚合起始劑為較佳,自由基聚合起始劑為更佳。又,在本發明中,光聚合起始劑可併用複數種。<< polymerization initiator
The non-volatile component may include a polymerization initiator. Examples of the polymerization initiator include a thermal polymerization initiator and a photopolymerization initiator. From the viewpoint of improving the crosslinking reactivity with the curable composition for imprint, the photopolymerization initiator is more suitable. good. As the photopolymerization initiator, a radical polymerization initiator and a cationic polymerization initiator are preferable, and a radical polymerization initiator is more preferable. In the present invention, a plurality of photopolymerization initiators may be used in combination.
作為光聚合起始劑,能夠任意使用公知的化合物。例如,可舉出鹵化烴衍生物(例如,包含三骨架之化合物、包含噁二唑骨架之化合物、包含三鹵化甲基之化合物等)、醯基膦氧化物等醯基膦化合物、六芳基雙咪唑、肟衍生物等肟化合物、有機過氧化物、硫化合物(thio compound)、酮化合物、芳香族鎓鹽、酮肟醚、胺基苯乙酮化合物、羥基苯乙酮、偶氮系化合物、疊氮化合物、茂金屬化合物、有機硼化合物、鐵-芳烴錯合物等。該等中肟化合物為較佳。關於該等的詳細內容,能夠參閱日本特開2016-027357號公報的0165~0182段的記載,該內容編入本說明書中。
作為醯基膦化合物,可舉出2,4,6-三甲基苯甲醯基-二苯基-氧化膦等。又,能夠使用作為市售品之IRGACURE-819或IRGACURE1173、IRGACURE-TPO(產品名:均為BASF公司製)。As the photopolymerization initiator, a known compound can be arbitrarily used. For example, halogenated hydrocarbon derivatives (for example, compounds containing a triskeleton, compounds containing an oxadiazole skeleton, compounds containing a trihalomethyl group, etc.), fluorenylphosphine compounds such as a fluorenylphosphine oxide, and hexaaryl Oxime compounds such as bisimidazole, oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketoxime ethers, aminoacetophenone compounds, hydroxyacetophenone, azo compounds , Azide compounds, metallocene compounds, organoboron compounds, iron-arene complexes, and the like. Among these, oxime compounds are preferred. For details of these, refer to the descriptions in paragraphs 0165 to 0182 of Japanese Patent Application Laid-Open No. 2016-027357, which are incorporated into this specification.
Examples of the fluorenylphosphine compound include 2,4,6-trimethylbenzylfluorenyl-diphenyl-phosphine oxide and the like. In addition, IRGACURE-819, IRGACURE1173, and IRGACURE-TPO (product names: all manufactured by BASF) can be used as commercially available products.
使用於上述壓印用下層膜形成組成物之光聚合起始劑的含量進行摻合時,在不揮發性成分中,例如為0.01~15質量%,較佳為0.1~12質量%,進一步較佳為0.2~7質量%。使用2種以上的光聚合起始劑時,其總計量成為上述範圍。When the content of the photopolymerization initiator used in the above-mentioned underlayer film-forming composition for imprinting is blended, the non-volatile component is, for example, 0.01 to 15% by mass, preferably 0.1 to 12% by mass. It is preferably 0.2 to 7 mass%. When two or more kinds of photopolymerization initiators are used, the total amount is within the above range.
<<聚合抑制劑>>
作為不揮發性成分,可包含聚合抑制劑。本實施形態之聚合抑制劑(B)係具有由硬化性主劑(A)產生之自由基在引起成長反應之前捕獲其自由基之能力之化合物。藉此,聚合抑制劑(B)作用為抑制硬化性主劑(A)的聚合。<< polymerization inhibitors >>
The non-volatile component may include a polymerization inhibitor. The polymerization inhibitor (B) of the present embodiment is a compound having the ability to capture the free radicals generated by the hardening main agent (A) before causing a growth reaction. Thereby, the polymerization inhibitor (B) functions to suppress the polymerization of the curable main agent (A).
聚合抑制劑(B)能夠為氫醌類、鄰苯二酚類、啡噻嗪、吩噁嗪中的任一個。作為聚合抑制劑(B)的具體例,能夠舉出4-甲氧基苯酚、4-甲氧基-1-萘酚、4-三級丁基兒茶酚、2,6-二-三級丁基苯酚、2,6-二三級丁基對甲酚、2-三級丁基-4,6-二甲基苯酚、2,4,6-三-三級丁基苯酚、氫醌、三級丁基氫醌等苯酚系化合物。作為聚合抑制劑(B)的具體例,還能夠舉出萘醌、苯醌等醌系化合物。作為聚合抑制劑(B)的具體例,能夠舉出啡噻嗪、吩噁嗪、4-羥基-2,2,6,6-四甲基哌啶等胺系化合物。作為聚合抑制劑(B)的具體例,還能夠舉出2,2,6,6-四甲基哌啶-N-氧基、4-羥基-2,2,6,6-四甲基哌啶-N-氧基等N-氧基系化合物。在此舉出之化合物僅為例示,聚合抑制劑(B)可為其他化合物。The polymerization inhibitor (B) may be any of hydroquinones, catechols, phenothiazines, and phenoxazines. Specific examples of the polymerization inhibitor (B) include 4-methoxyphenol, 4-methoxy-1-naphthol, 4-tert-butylcatechol, and 2,6-di-tertiary Butylphenol, 2,6-tertiary-butyl-p-cresol, 2-tertiary-butyl-4,6-dimethylphenol, 2,4,6-tri-tertiary-butylphenol, hydroquinone, Phenolic compounds such as tertiary butyl hydroquinone. Specific examples of the polymerization inhibitor (B) include quinone compounds such as naphthoquinone and benzoquinone. Specific examples of the polymerization inhibitor (B) include amine compounds such as phenothiazine, phenoxazine, and 4-hydroxy-2,2,6,6-tetramethylpiperidine. Specific examples of the polymerization inhibitor (B) include 2,2,6,6-tetramethylpiperidine-N-oxy and 4-hydroxy-2,2,6,6-tetramethylpiperidine. N-oxyl compounds such as pyridine-N-oxy. The compounds listed here are only examples, and the polymerization inhibitor (B) may be another compound.
聚合抑制劑的含量為固體成分的0.0001質量%以上且10.0質量%以下為較佳,0.001質量%以上且1.0質量%以下為更佳,0.005質量%以上且0.1質量%以下為進一步較佳。聚合抑制劑可僅使用1種,亦可使用2種以上。使用2種以上時,該等總計量成為上述範圍為較佳。The content of the polymerization inhibitor is preferably 0.0001% by mass or more and 10.0% by mass or less, more preferably 0.001% by mass or more and 1.0% by mass or less, and more preferably 0.005% by mass or more and 0.1% by mass or less. The polymerization inhibitor may be used alone or in combination of two or more. When two or more kinds are used, it is preferable that these total measurements fall within the above range.
<<其他成分>>
作為摻合到壓印用下層膜形成組成物之不揮發性成分,除上述化合物之外,可以包含1種或2種以上熱聚合起始劑、抗氧化劑、均染劑、增黏劑、界面活性劑等。
關於熱聚合起始劑等,能夠使用日本特開2013-036027號公報、日本特開2014-090133號公報、日本特開2013-189537號公報中記載之各成分。關於含量等亦能夠參閱上述公報的記載。
又,本發明中,還能夠設為壓印用下層膜形成組成物實質上不包含界面活性劑之構成。實質上不包含係為壓印用下層膜形成組成物中的不揮發性成分的0.1質量%以下。<< Other Ingredients >>
As a non-volatile component to be incorporated into the underlayer film-forming composition for imprint, in addition to the above-mentioned compounds, it may contain one or two or more thermal polymerization initiators, antioxidants, leveling agents, tackifiers, and interfaces. Active agent etc.
Regarding the thermal polymerization initiator, the components described in Japanese Patent Application Laid-Open No. 2013-036027, Japanese Patent Application Laid-Open No. 2014-090133, and Japanese Patent Application Laid-Open No. 2013-189537 can be used. Regarding the content and the like, it is also possible to refer to the description in the aforementioned publication.
Moreover, in this invention, it can also be set as the structure which does not contain a surfactant substantially for an underlayer film formation composition for imprints. It does not substantially contain 0.1% by mass or less of nonvolatile components in the underlayer film-forming composition for imprint.
<<下層膜用溶劑>>
壓印用下層膜形成組成物包含溶劑。溶劑例如以70.0質量%以上的比例包含在23℃為液體且沸點為250℃以下的化合物(下層膜用溶劑)為較佳。通常,不揮發性成分最終形成下層膜。壓印用下層膜形成組成物包含80.0質量%以上的下層膜用溶劑為較佳,90.0質量%以上為更佳,93.0質量%以上為更佳,94.0質量%以上為進一步較佳,可為95.0質量%以上,98.0質量%以上,99.0質量%以上。
溶劑在壓印用下層膜形成組成物中可僅包含1種,亦可包含2種以上。包含2種以上時,總計量成為上述範圍為較佳。
下層膜用溶劑的沸點為230℃以下為較佳,200℃以下為更佳,180℃以下為進一步較佳,160℃以下為更較佳,130℃以下為更進一步較佳。下限值為23℃,但實際上為60℃以上。藉由將沸點設為上述範圍,能夠容易從下層膜去除溶劑,因此較佳。<<< Solvent for lower film >>
The underlayer film-forming composition for imprint contains a solvent. The solvent preferably contains, for example, a compound (solvent for an underlayer film) that is liquid at 23 ° C. and has a boiling point of 250 ° C. or less at a ratio of 70.0% by mass or more. Generally, the non-volatile components eventually form an underlayer film. The underlayer film-forming composition for imprinting preferably contains 80.0% by mass or more of the solvent for the underlayer film, more preferably 90.0% by mass or more, more preferably 93.0% by mass or more, and more preferably 94.0% by mass or more, and may be 95.0 Above mass%, above 98.0 mass%, above 99.0 mass%.
The solvent may contain only one kind in the underlayer film-forming composition for imprint, or two or more kinds. When two or more kinds are included, the total measurement is preferably within the above range.
The boiling point of the solvent for the lower film is preferably 230 ° C or lower, more preferably 200 ° C or lower, more preferably 180 ° C or lower, more preferably 160 ° C or lower, and 130 ° C or lower. The lower limit is 23 ° C, but it is actually 60 ° C or higher. By setting the boiling point to the above range, the solvent can be easily removed from the lower layer film, which is preferable.
下層膜用溶劑係有機溶劑為較佳。溶劑係包含酯基、羰基、羥基及醚基中的任意一個以上之溶劑為較佳。其中,使用非質子性極性溶劑為較佳。A solvent-based organic solvent for the underlayer film is preferred. The solvent is preferably a solvent containing any one or more of an ester group, a carbonyl group, a hydroxyl group, and an ether group. Among them, it is preferable to use an aprotic polar solvent.
作為具體例,選擇烷氧基醇、丙二醇單烷基醚羧酸酯、丙二醇單烷基醚、乳酸酯、乙酸酯、烷氧基丙酸酯、鏈狀酮、環狀酮、內酯及伸烷基碳酸酯。As specific examples, alkoxy alcohol, propylene glycol monoalkyl ether carboxylate, propylene glycol monoalkyl ether, lactate, acetate, alkoxypropionate, chain ketone, cyclic ketone, and lactone are selected. And alkylene carbonate.
作為烷氧基醇,可舉出甲氧基乙醇、乙氧基乙醇、甲氧基丙醇(例如1-甲氧基-2-丙醇)、乙氧基丙醇(例如,1-乙氧基-2-丙醇)、丙氧基丙醇(例如,1-丙氧基-2-丙醇)、甲氧基丁醇(例如,1-甲氧基-2-丁醇、1-甲氧基-3-丁醇)、乙氧基丁醇(例如,1-乙氧基-2-丁醇、1-乙氧基-3-丁醇)、甲基戊醇(例如,4-甲基-2-戊醇)等。Examples of the alkoxy alcohol include methoxyethanol, ethoxyethanol, methoxypropanol (for example, 1-methoxy-2-propanol), and ethoxypropanol (for example, 1-ethoxy). 2-propanol), propoxypropanol (for example, 1-propoxy-2-propanol), methoxybutanol (for example, 1-methoxy-2-butanol, 1-methyl Oxy-3-butanol), ethoxybutanol (for example, 1-ethoxy-2-butanol, 1-ethoxy-3-butanol), methylpentanol (for example, 4-methyl 2-pentyl alcohol) and the like.
作為丙二醇單烷基醚羧酸酯,為選自包含丙二醇單甲醚乙酸酯、丙二醇單甲醚丙酸酯及丙二醇單乙醚乙酸酯之群組中之至少1個為較佳,丙二醇單甲醚乙酸酯為特佳。The propylene glycol monoalkyl ether carboxylic acid ester is preferably at least one selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether propionate, and propylene glycol monoethyl ether acetate. Methyl ether acetate is particularly preferred.
又,作為丙二醇單烷基醚,丙二醇單甲醚或丙二醇單乙醚為較佳。
作為乳酸酯,乳酸乙酯、乳酸丁酯或乳酸丙酯為較佳。
作為乙酸酯,乙酸甲酯、乙酸乙酯、乙酸丁酯、乙酸異丁酯、乙酸丙酯、乙酸異戊酯(Isoamyl acetate)、甲酸甲酯、甲酸乙酯、甲酸丁酯、甲酸丙酯或乙酸3-甲氧基丁酯為較佳。
作為烷氧基丙酸酯,3-甲氧基丙酸甲酯(MMP)或3-乙氧基丙酸乙酯(EEP)為較佳。
作為鏈狀酮,1-辛酮、2-辛酮、1-壬酮、2-壬酮、丙酮、4-庚酮、1-己酮、2-己酮、二異丁酮、苯基丙酮、甲基乙基酮、甲基異丁基酮、乙醯基丙酮、丙酮基丙酮、紫羅蘭酮(ionone)、二丙酮醇、乙醯甲醇、苯乙酮、甲基萘基酮、甲基戊基酮為較佳。
作為環狀酮,甲基環己酮、異佛爾酮或環己酮為較佳。
作為內酯,γ-丁內酯為較佳。
作為伸烷基碳酸酯,碳酸丙烯酯為較佳。As the propylene glycol monoalkyl ether, propylene glycol monomethyl ether or propylene glycol monoethyl ether is preferred.
As the lactate, ethyl lactate, butyl lactate or propyl lactate is preferred.
As the acetate, methyl acetate, ethyl acetate, butyl acetate, isobutyl acetate, propyl acetate, isoamyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate Or 3-methoxybutyl acetate is preferred.
As the alkoxypropionate, methyl 3-methoxypropionate (MMP) or ethyl 3-ethoxypropionate (EEP) is preferred.
As the chain ketone, 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutanone, phenylacetone , Methyl ethyl ketone, methyl isobutyl ketone, acetoacetone, acetone acetone, ionone, diacetone alcohol, acetomethanol, acetophenone, methylnaphthyl ketone, methylpentyl Ketones are preferred.
As the cyclic ketone, methylcyclohexanone, isophorone or cyclohexanone is preferred.
As the lactone, γ-butyrolactone is preferred.
As the alkylene carbonate, propylene carbonate is preferable.
除上述成分之外,使用碳數為7以上(7~14為較佳,7~12為更佳,7~10為進一步較佳)且雜原子數為2以下的酯系溶劑為較佳。In addition to the above components, it is preferable to use an ester-based solvent having a carbon number of 7 or more (7 to 14 is preferred, 7 to 12 is more preferred, 7 to 10 is more preferred) and a hetero atom number is 2 or less.
作為碳數為7以上且雜原子數為2以下的酯系溶劑的較佳例,可舉出乙酸戊酯、乙酸2-甲基丁酯、乙酸1-甲基丁酯、乙酸己酯、丙酸戊酯、丙酸己酯、丙酸丁酯、異丁酸異丁酯、丙酸庚酯、丁酸丁酯等,使用乙酸異戊酯(Isoamyl acetate)為特佳。Preferable examples of the ester-based solvent having 7 or more carbon atoms and 2 or less heteroatoms include amyl acetate, 2-methylbutyl acetate, 1-methylbutyl acetate, hexyl acetate, and propyl acetate. Amyl acetate, hexyl propionate, butyl propionate, isobutyl isobutyrate, heptyl propionate, butyl butyrate, etc. It is particularly preferred to use isoamyl acetate.
又,使用閃點(以下,還稱作fp)為30℃以上之溶劑亦較佳。作為該種成分,丙二醇單甲醚(fp:47℃)、乳酸乙酯(fp:53℃)、3-乙氧基丙酸乙酯(fp:49℃)、甲基戊基酮(fp:42℃)、環己酮(fp:30℃)、乙酸戊酯(fp:45℃)、2-羥基異丁酸甲酯(fp:45℃)、γ-丁內酯(fp:101℃)或碳酸丙烯酯(fp:132℃)為較佳。該等中,丙二醇單乙醚、乳酸乙酯、乙酸戊酯或環己酮為進一步較佳,丙二醇單乙醚或乳酸乙酯為特佳。It is also preferable to use a solvent having a flash point (hereinafter also referred to as fp) of 30 ° C or higher. As such a component, propylene glycol monomethyl ether (fp: 47 ° C), ethyl lactate (fp: 53 ° C), ethyl 3-ethoxypropionate (fp: 49 ° C), and methylpentyl ketone (fp: 42 ° C), cyclohexanone (fp: 30 ° C), amyl acetate (fp: 45 ° C), methyl 2-hydroxyisobutyrate (fp: 45 ° C), γ-butyrolactone (fp: 101 ° C) Or propylene carbonate (fp: 132 ° C) is preferred. Among these, propylene glycol monoethyl ether, ethyl lactate, amyl acetate, or cyclohexanone is more preferable, and propylene glycol monoethyl ether or ethyl lactate is particularly preferable.
作為下層膜用溶劑,且作為其中較佳之溶劑,為選自包含水、1-甲氧基-2-丙醇、丙二醇單甲醚乙酸酯(PGMEA)、丙酸乙氧基乙酯、環己酮、2-庚酮、γ-丁內酯、乙酸丁酯、丙二醇單甲醚(PGME)、乳酸乙酯及4-甲基-2-戊醇之群組中之至少1種,為選自包含1-甲氧基-2-丙醇、PGMEA、乙酸丁酯之群組中之至少1種為進一步較佳。As the solvent for the lower layer film, and as a preferable solvent among them, it is selected from the group consisting of water, 1-methoxy-2-propanol, propylene glycol monomethyl ether acetate (PGMEA), ethoxyethyl propionate, and cyclic At least one member selected from the group consisting of hexanone, 2-heptanone, γ-butyrolactone, butyl acetate, propylene glycol monomethyl ether (PGME), ethyl lactate, and 4-methyl-2-pentanol At least one selected from the group consisting of 1-methoxy-2-propanol, PGMEA, and butyl acetate is further preferred.
作為壓印用下層膜形成組成物的收容容器能夠使用以往習知的收容容器。又,作為收容容器,以抑制雜質混入原料或組成物中之目的,使用由6種6層樹脂構成容器內壁之多層瓶或將6種樹脂設為7層結構之瓶亦較佳。作為該種容器,例如可舉出日本特開2015-123351號公報中記載之容器。As a storage container for the underlayer film-forming composition for imprint, a conventionally known storage container can be used. In addition, as a storage container, in order to prevent impurities from being mixed into the raw materials or the composition, it is also preferable to use a multi-layer bottle composed of six kinds of six-layer resin or a bottle having six resins in a seven-layer structure. As such a container, the container described in Unexamined-Japanese-Patent No. 2015-123351 is mentioned, for example.
<壓印用硬化性組成物>
<<聚合性化合物>>
壓印用硬化性組成物包含聚合性化合物為較佳,包含具有芳香環之聚合性化合物為較佳。聚合性化合物可為單官能聚合性化合物,亦可為多官能聚合性化合物。又,包含單官能聚合性化合物和多官能聚合性化合物這雙方為較佳。< curable composition for imprinting >
<<< Polymerizable Compound >>
The curable composition for imprint preferably contains a polymerizable compound, and more preferably contains a polymerizable compound having an aromatic ring. The polymerizable compound may be a monofunctional polymerizable compound or a polyfunctional polymerizable compound. Moreover, it is preferable to include both a monofunctional polymerizable compound and a polyfunctional polymerizable compound.
<<<單官能聚合性化合物>>>
使用於壓印用硬化性組成物之單官能聚合性化合物的分子量為50以上為較佳,100以上為更佳,150以上為進一步較佳。又,分子量為1,000以下為較佳,800以下為更佳,300以下為進一步較佳,270以下為更較佳。藉由將分子量設為上述下限值以上,有能夠抑制揮發性之傾向。藉由將分子量設為上述上限值以下,有能夠降低黏度之傾向。
使用於壓印用硬化性組成物之單官能聚合性化合物的沸點為85℃以上為較佳,110℃以上為更佳,130℃以上為進一步較佳。藉由將沸點設為上述下限值以上,能夠抑制揮發性。關於沸點的上限值,並無特別限定,例如,能夠將沸點設為350℃以下。<<< monofunctional polymerizable compound >>
The molecular weight of the monofunctional polymerizable compound used in the curable composition for imprint is preferably 50 or more, more preferably 100 or more, and more preferably 150 or more. The molecular weight is preferably 1,000 or less, more preferably 800 or less, more preferably 300 or less, and even more preferably 270 or less. When the molecular weight is at least the above-mentioned lower limit value, there is a tendency that the volatility can be suppressed. When the molecular weight is equal to or less than the above upper limit, the viscosity tends to be reduced.
The boiling point of the monofunctional polymerizable compound used for the curable composition for imprint is preferably 85 ° C or higher, more preferably 110 ° C or higher, and more preferably 130 ° C or higher. By setting the boiling point to be at least the above lower limit value, volatility can be suppressed. The upper limit of the boiling point is not particularly limited, and for example, the boiling point can be set to 350 ° C or lower.
使用於壓印用硬化性組成物之單官能聚合性化合物所具有之聚合性基團的種類並無特別限定,但例示有乙烯性不飽和基、環氧基等,乙烯性不飽和基為較佳。作為乙烯性不飽和基,(甲基)丙烯醯基為較佳,丙烯醯基為更佳。The type of the polymerizable group of the monofunctional polymerizable compound used in the curable composition for imprint is not particularly limited, but examples thereof include ethylenically unsaturated groups, epoxy groups, and the like. good. As the ethylenically unsaturated group, a (meth) acrylfluorenyl group is more preferable, and acrylfluorenyl group is more preferable.
構成使用於壓印用硬化性組成物之單官能聚合性化合物之原子的種類並無特別限定,但是,僅由選自碳原子、氧原子、氫原子及鹵素原子之原子構成為較佳,僅由選自碳原子、氧原子及氫原子之原子構成為更佳。The type of the atom constituting the monofunctional polymerizable compound used in the curable composition for imprint is not particularly limited, but it is preferably composed only of an atom selected from a carbon atom, an oxygen atom, a hydrogen atom, and a halogen atom, and only It is more preferably composed of an atom selected from a carbon atom, an oxygen atom, and a hydrogen atom.
使用於壓印用硬化性組成物之單官能聚合性化合物的較佳的第1實施形態為具有碳數4以上的直鏈或分支的烴鏈之化合物。
本發明中的烴鏈表示烷鏈、烯鏈、炔鏈,烷鏈、烯鏈為較佳,烷鏈為更佳。
在本發明中,烷鏈表示烷基及伸烷基。同樣地,烯鏈表示烯基及伸烯基,炔鏈表示炔基及伸炔基。該等中,直鏈或分支的烷基、烯基為更佳,直鏈或分支的烷基為進一步較佳,直鏈的烷基為更較佳。
上述直鏈或分支的烴鏈(烷基為較佳)為碳數4以上,碳數6以上為較佳,碳數8以上為更佳,碳數10以上為進一步較佳,碳數12以上為更較佳。關於碳數的上限值,並無特別限定,但是,例如,能夠設為碳數25以下。
從提高脫模性的觀點而言,上述直鏈或分支的烴鏈可包含醚基(-O-),但不包含醚基為較佳。
藉由使用具有該種烴鏈之單官能聚合性化合物,以比較少的添加量,降低硬化物(圖案)的彈性係數,並提高脫模性。又,若使用具有直鏈或分支的烷基之單官能聚合性化合物,則能夠降低鑄模與硬化物(圖案)的界面能量,並進一步提高脫模性。
作為具有使用於壓印用硬化性組成物之單官能聚合性化合物為較佳之烴基,能夠舉出(1)~(3)。
(1)碳數8以上的直鏈烷基
(2)碳數10以上的分支烷基
(3)由碳數1以上的直鏈或分支的烷基取代的脂環、芳香族環或芳香族雜環A preferred first embodiment of the monofunctional polymerizable compound used in the curable composition for imprint is a compound having a straight or branched hydrocarbon chain having 4 or more carbon atoms.
The hydrocarbon chain in the present invention means an alkane chain, an olefin chain, an alkyne chain, an alkane chain and an alkene chain are preferred, and an alkane chain is more preferred.
In the present invention, an alkane chain means an alkyl group and an alkylene group. Similarly, an alkenyl chain represents an alkenyl group and an alkenyl group, and an alkynyl chain represents an alkynyl group and an alkenyl group. Among these, a linear or branched alkyl group or alkenyl group is more preferred, a linear or branched alkyl group is more preferred, and a linear alkyl group is more preferred.
The above straight or branched hydrocarbon chain (alkyl is preferred) is 4 or more carbons, 6 or more carbons is preferred, 8 or more carbons is more preferred, 10 or more carbons is more preferred, and 12 or more carbons are preferred For better. The upper limit value of the carbon number is not particularly limited, but it can be set to, for example, 25 or less.
From the viewpoint of improving the mold release property, the linear or branched hydrocarbon chain may include an ether group (-O-), but it is preferable not to include an ether group.
By using a monofunctional polymerizable compound having such a hydrocarbon chain, the elasticity coefficient of the cured product (pattern) is reduced with a relatively small amount of addition, and the releasability is improved. In addition, when a monofunctional polymerizable compound having a linear or branched alkyl group is used, the interface energy between the mold and the cured product (pattern) can be reduced, and the releasability can be further improved.
Preferred monofunctional polymerizable compounds having a curable composition for imprint are hydrocarbon groups, and examples thereof include (1) to (3).
(1) Linear alkyl group having 8 or more carbon atoms (2) Branched alkyl group having 10 or more carbon atoms (3) Alicyclic ring, aromatic ring or aromatic group substituted with linear or branched alkyl group having 1 or more carbon atoms Heterocyclic
(1)碳數8以上的直鏈烷基
碳數8以上的直鏈烷基係碳數10以上者為更佳,碳數11以上為進一步較佳,碳數12以上為更較佳。又,碳數20以下為較佳,碳數18以下為更佳,碳數16以下為進一步較佳,碳數14以下為更較佳。
(2)碳數10以上的分支烷基
上述碳數10以上的分支烷基係碳數10~20者為較佳,碳數10~16為更佳,碳數10~14為進一步較佳,碳數10~12更較佳。
(3)由碳數1以上的直鏈或分支的烷基取代之脂環、芳香族環或芳香族雜環
碳數1以上的直鏈或分支的烷基係直鏈的烷基為更佳。烷基的碳數為14以下為較佳,12以下為更佳,10以下為進一步較佳。
脂環、芳香族環或芳香族雜環的環可為單環亦可為縮環,但單環為較佳。為縮環時,環的個數為2個或3個為較佳。環為3~8員環為較佳,5員環或6員環為更佳,6員環為進一步較佳。作為環的具體例,可舉出後述環Cz的例。(1) A linear alkyl group having 8 or more carbons and a linear alkyl group having 8 or more carbons are more preferred, a carbon number of 11 or more is more preferred, and a carbon number of 12 or more is more preferred. Further, a carbon number of 20 or less is preferred, a carbon number of 18 or less is more preferred, a carbon number of 16 or less is further preferred, and a carbon number of 14 or less is more preferred.
(2) A branched alkyl group having 10 or more carbons The branched alkyl system having 10 or more carbons is preferably 10 to 20 carbons, more preferably 10 to 16 carbons, and more preferably 10 to 14 carbons. The number of carbon atoms is more preferably 10 to 12.
(3) An alicyclic ring, an aromatic ring, or an aromatic heterocyclic ring substituted with a linear or branched alkyl group having 1 or more carbon atoms and a linear or branched alkyl system having a carbon number of 1 or more is more preferred. . The carbon number of the alkyl group is preferably 14 or less, more preferably 12 or less, and even more preferably 10 or less.
The ring of an alicyclic ring, an aromatic ring or an aromatic heterocyclic ring may be a monocyclic ring or a condensed ring, but a monocyclic ring is preferred. When it is a condensed ring, the number of rings is preferably two or three. A ring of 3 to 8 members is preferred, a ring of 5 or 6 members is more preferred, and a ring of 6 members is even more preferred. Specific examples of the ring include an example of a ring Cz described later.
使用於壓印用硬化性組成物之單官能聚合性化合物係碳數4以上的直鏈或分支的烴鏈和聚合性基團直接或經由連結基鍵結之化合物為較佳,係上述(1)~(3)的基團中的任一個與聚合性基團直接鍵結之化合物為更佳。作為連結基,例示有-O-、-C(=O)-、-CH2 -或該等的組合。作為在本發明中使用之單官能聚合性化合物,直接鍵結(1)碳數8以上的直鏈烷基與(甲基)丙烯醯氧基之直鏈烷基(甲基)丙烯酸酯為特佳。The monofunctional polymerizable compound used for the hardenable composition for imprinting is a compound having a straight or branched hydrocarbon chain having 4 or more carbon atoms and a polymerizable group bonded directly or via a linking group. A compound in which any one of the groups) to (3) is directly bonded to a polymerizable group is more preferred. Examples of the linking group include -O-, -C (= O)-, -CH 2- , and combinations thereof. As the monofunctional polymerizable compound used in the present invention, (1) a straight-chain alkyl group having 8 or more carbon atoms and a (meth) acryloxyoxy straight-chain alkyl (meth) acrylate is specifically bonded good.
單官能聚合性化合物係由下述式(I-1)表示之化合物為較佳。
[化學式12]
R12
表示選自烷基(碳數1~36為較佳,1~30為更佳,1~24為進一步較佳)、脂環(碳數3~24為較佳,3~12為更佳,3~6為進一步較佳)、芳香族環(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)及芳香族雜環(碳數2~12為較佳,2~6為更佳,2~5為進一步較佳)之至少1種或基於該等的組合之基團。R11
表示氫原子或甲基。L11
表示單鍵或上述連結基L,伸烷基或伸烯基為較佳。R12
與L11
可經由或不經由連結基L鍵結而形成環。R12
、L11
可具有上述取代基T。取代基T可鍵結複數個而形成環,亦可與R12
鍵結或與L11
鍵結而形成環。取代基T為複數個時,可以彼此相同,亦可彼此不同。R12
中的脂環、芳香族環或芳香族雜環的較佳範圍與後述環Cz相同。The monofunctional polymerizable compound is preferably a compound represented by the following formula (I-1).
[Chemical Formula 12]
R 12 represents an alkyl group (carbon number 1 to 36 is preferred, 1 to 30 is more preferred, 1 to 24 is more preferred), alicyclic (carbon number 3 to 24 is preferred, 3 to 12 is more preferred) 3 to 6 are more preferred), aromatic rings (6 to 22 carbons are preferred, 6 to 18 are more preferred, 6 to 10 are more preferred) and aromatic heterocycles (2 to 12 carbons) For the sake of preference, 2 to 6 are more preferred, and 2 to 5 are further preferred) at least one kind or a group based on these. R 11 represents a hydrogen atom or a methyl group. L 11 represents a single bond or the above-mentioned linking group L, and an alkylene or an alkylene group is preferred. R 12 and L 11 may form a ring by bonding with or without a linking group L. R 12 and L 11 may have the above-mentioned substituent T. A plurality of substituents T may be bonded to form a ring, or may be bonded to R 12 or L 11 to form a ring. When there are a plurality of substituents T, they may be the same as or different from each other. The preferable range of the alicyclic ring, aromatic ring, or aromatic heterocyclic ring in R 12 is the same as the ring Cz mentioned later.
作為第1實施形態的單官能聚合性化合物,能夠例示下述第1群組及第2群組。然而,本發明並不限定於該等自不必敘述。又,第1群組比第2群組更佳。
第1群組
[化學式13]
As the monofunctional polymerizable compound of the first embodiment, the following first group and second group can be exemplified. However, the present invention is not limited to such self-explanatory. The first group is better than the second group.
Group 1
[Chemical Formula 13]
第2群組
[化學式14]
Group 2
[Chemical Formula 14]
使用於壓印用硬化性組成物之單官能聚合性化合物的較佳的第2實施形態係具有環狀結構之化合物。作為環狀結構,3~8員環的單環或縮合環為較佳。構成上述縮合環之環的個數為2個或3個為較佳。環狀結構為5員環或6員環為更佳,6員環為進一步較佳。又,單環為更佳。
聚合性化合物的一分子中的環狀結構的個數可為1個,亦可為2個以上,1個或2個為較佳,1個為更佳。再者,為縮合環時,將縮合環視為1個環狀結構。A preferred second embodiment of the monofunctional polymerizable compound used in the curable composition for imprint is a compound having a cyclic structure. As the cyclic structure, a single ring or a condensed ring of 3 to 8 member rings is preferred. The number of rings constituting the condensed ring is preferably two or three. The ring structure is more preferably a 5-member ring or a 6-member ring, and a 6-member ring is more preferable. A single ring is more preferable.
The number of cyclic structures in one molecule of the polymerizable compound may be one, or may be two or more, one or two is more preferred, and one is more preferred. When it is a condensed ring, the condensed ring is regarded as a cyclic structure.
作為第2實施形態的單官能聚合性化合物,能夠例示下述化合物。然而,本發明並不限定於該等自不必敘述。又,上述第1實施形態中敘述之化合物中,例示有具有環狀結構之化合物亦作為本實施形態的較佳化合物。
[化學式15]
As the monofunctional polymerizable compound of the second embodiment, the following compounds can be exemplified. However, the present invention is not limited to such self-explanatory. In addition, among the compounds described in the first embodiment, a compound having a cyclic structure is exemplified as a preferable compound in this embodiment.
[Chemical Formula 15]
本發明中,在不脫離本發明的主旨之範圍,可使用除上述單官能聚合性化合物之外的單官能聚合性化合物,例示日本特開2014-170949號公報記載之聚合性化合物中的單官能聚合性化合物,該等內容包含在本說明書中。In the present invention, monofunctional polymerizable compounds other than the above-mentioned monofunctional polymerizable compounds can be used without departing from the gist of the present invention. Examples of the monofunctional polymerizable compounds described in Japanese Patent Application Laid-Open No. 2014-170949 are exemplified. A polymerizable compound is included in this specification.
關於使用於壓印用硬化性組成物之單官能聚合性化合物相對於總聚合性化合物之含量,當含有時,6質量%以上為較佳,8質量%以上為更佳,10質量%以上為進一步較佳,12質量%以上更較佳。又,上述含量為60質量%以下為更佳,可為55質量%以下。
本發明中可僅包含1種單官能聚合性化合物,亦可包含2種以上。包含2種以上時,總計量成為上述範圍為較佳。Regarding the content of the monofunctional polymerizable compound used in the curable composition for imprinting relative to the total polymerizable compound, when contained, 6 mass% or more is preferable, 8 mass% or more is more preferable, and 10 mass% or more is It is more preferably, and more preferably 12% by mass or more. The content is more preferably 60% by mass or less, and may be 55% by mass or less.
The present invention may include only one type of monofunctional polymerizable compound, or may include two or more types. When two or more kinds are included, the total measurement is preferably within the above range.
<<<多官能聚合性化合物>>>
使用於壓印用硬化性組成物之多官能聚合性化合物並無特別限定,但包含脂環、芳香族環及芳香族雜環中的至少1種為較佳,包含芳香族環及芳香族雜環中的至少1種為更佳。在以下說明中,有時將包含脂環、芳香族環及芳香族雜環中的至少1種之化合物稱作含環多官能聚合性化合物。<<< Multifunctional Polymerizable Compound >>
The polyfunctional polymerizable compound used for the curable composition for imprinting is not particularly limited, but preferably contains at least one of an alicyclic ring, an aromatic ring, and an aromatic heterocyclic ring, and includes an aromatic ring and an aromatic heterocyclic ring. At least one of the rings is more preferable. In the following description, a compound containing at least one of an alicyclic ring, an aromatic ring, and an aromatic heterocyclic ring may be referred to as a ring-containing polyfunctional polymerizable compound.
使用於壓印用硬化性組成物之含環多官能聚合性化合物的分子量為1,000以下為較佳,800以下為更佳,500以下為進一步較佳,350以下為更較佳。藉由將分子量的上限值設為1,000以下,有能夠降低黏度之傾向。關於分子量的下限值,並無特別限定,但是,例如,能夠設為200以上。The molecular weight of the ring-containing polyfunctional polymerizable compound used in the curable composition for imprint is preferably 1,000 or less, more preferably 800 or less, even more preferably 500 or less, and more preferably 350 or less. When the upper limit of the molecular weight is 1,000 or less, the viscosity tends to be reduced. The lower limit of the molecular weight is not particularly limited, but can be set to 200 or more, for example.
使用於壓印用硬化性組成物之含環多官能聚合性化合物所具有之聚合性基團的個數為2以上,2~7為較佳,2~4為更佳,2或3為進一步較佳,2為更較佳。The number of polymerizable groups of the ring-containing polyfunctional polymerizable compound used in the curable composition for imprinting is 2 or more, 2 to 7 is preferable, 2 to 4 is more preferable, and 2 or 3 is further Better, 2 is more preferred.
使用於壓印用硬化性組成物之含環多官能聚合性化合物所具有之聚合性基團的種類並無特別限定,但是,例示有乙烯性不飽和基、環氧基等,乙烯性不飽和基為較佳。作為乙烯性不飽和基,(甲基)丙烯醯基為更佳,丙烯醯基為進一步較佳。1個分子中可包含2種以上的聚合性基團,亦可包含2個以上相同種類的聚合性基團。The type of the polymerizable group of the ring-containing polyfunctional polymerizable compound used for the imprintable curable composition is not particularly limited, but examples thereof include ethylenically unsaturated groups, epoxy groups, and the like, and ethylenic unsaturated groups. Basis is better. As the ethylenically unsaturated group, a (meth) acrylfluorenyl group is more preferable, and acrylfluorenyl group is more preferable. One molecule may include two or more kinds of polymerizable groups, and may also include two or more kinds of polymerizable groups of the same type.
構成使用於壓印用硬化性組成物之含環多官能聚合性化合物之原子的種類並無特別限定,但是,僅由選自碳原子、氧原子、氫原子及鹵素原子之原子構成為較佳,僅由選自碳原子、氧原子及氫原子之原子構成為更佳。The type of the atom constituting the ring-containing polyfunctional polymerizable compound used in the curable composition for imprint is not particularly limited, but it is preferably composed only of an atom selected from a carbon atom, an oxygen atom, a hydrogen atom, and a halogen atom. It is more preferable to be composed only of an atom selected from a carbon atom, an oxygen atom, and a hydrogen atom.
使用於壓印用硬化性組成物之含環多官能聚合性化合物中所含之環可為單環,亦可為縮環,但單環為較佳。為縮環時,環的個數為2個或3個為較佳。環為3~8員環為較佳,5員環或6員環為更佳,6員環為進一步較佳。又,環可為脂環,亦可為芳香族環或芳香族雜環,但芳香族環或芳香族雜環為較佳,芳香族環為進一步較佳。作為環的具體例,可舉出環Cz的例。
使用於壓印用硬化性組成物之含環多官能聚合性化合物中的環的個數可為1個,亦可為2個以上,但1個或2個為較佳,1個為更佳。再者,為縮合環時,將縮合環視為1個。
使用於壓印用硬化性組成物之含環多官能聚合性化合物的結構由(聚合性基團)-(單鍵或2價的連結基)-(具有環之2價的基團)-(單鍵或2價的連結基)-(聚合性基團)表示為較佳。其中,作為連結基,伸烷基為更佳,碳數1~3的伸烷基為進一步較佳。The ring contained in the ring-containing polyfunctional polymerizable compound used for the imprintable curable composition may be a single ring or a condensed ring, but a single ring is preferred. When it is a condensed ring, the number of rings is preferably two or three. A ring of 3 to 8 members is preferred, a ring of 5 or 6 members is more preferred, and a ring of 6 members is even more preferred. The ring may be an alicyclic ring, or an aromatic ring or an aromatic heterocyclic ring, but an aromatic ring or an aromatic heterocyclic ring is preferred, and an aromatic ring is further preferred. Specific examples of the ring include an example of a ring Cz.
The number of rings in the ring-containing polyfunctional polymerizable compound used in the curable composition for imprinting may be one, or may be two or more, but one or two is preferable, and one is more preferable. . When it is a condensed ring, the condensed ring is regarded as one.
The structure of the ring-containing polyfunctional polymerizable compound used in the curable composition for imprinting is composed of (polymerizable group)-(single bond or divalent linking group)-(divalent group having ring)-( A single bond or a divalent linking group)-(polymerizable group) is preferably represented. Among them, as the linking group, an alkylene group is more preferable, and an alkylene group having 1 to 3 carbon atoms is more preferable.
使用於壓印用硬化性組成物之含環多官能聚合性化合物由下述式(I-2)表示為較佳。
[化學式16]
Q表示具有選自脂環(碳數3~24為較佳,3~12為更佳,3~6為進一步較佳)、芳香族環(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)及芳香族雜環(碳數2~12為較佳,2~6為更佳,2~5為進一步較佳)之至少1種之1+q價的基團。R2 1
及R2 2
分別獨立地表示氫原子或甲基。L21
及L22
分別獨立地表示單鍵或上述連結基L。Q與L21
或L22
可以經由或不經由連結基L鍵結而形成環。Q、L21
及L22
可具有上述取代基T。取代基T可鍵結複數個而形成環,亦可與Q鍵結或者與L21
或L22
鍵結而形成環。取代基T為複數個時,可以彼此相同,亦可彼此不同。Q中的脂環、芳香族環或芳香族雜環的較佳範圍可舉出後述環Cz。q為1~5的整數,1~3的整數為較佳,1或2為更佳,1為進一步較佳。
Q可具有複數個脂環、複數個芳香族環、複數個芳香族雜環、脂環與芳香族環、脂環與芳香族雜環、芳香族環與芳香族雜環鍵結之結構。作為芳香族環所連結之結構可舉出上述式Ar1~Ar5的結構。The ring-containing polyfunctional polymerizable compound used in the curable composition for imprint is preferably represented by the following formula (I-2).
[Chemical Formula 16]
Q represents a ring selected from an alicyclic ring (carbon number 3 to 24 is preferred, 3 to 12 is more preferred, 3 to 6 is more preferred), an aromatic ring (carbon number 6 to 22 is preferred, 6 to 18 is More preferably, 6 to 10 is further preferred) and aromatic heterocycles (carbon numbers of 2 to 12 are preferred, 2 to 6 are more preferred, and 2 to 5 are further preferred) at least one of the 1 + q valences Group. R 2 1 and R 2 2 each independently represent a hydrogen atom or a methyl group. L 21 and L 22 each independently represent a single bond or the above-mentioned linking group L. Q and L 21 or L 22 may form a ring by bonding with or without a linking group L. Q, L 21 and L 22 may have the above-mentioned substituent T. A plurality of substituents T may be bonded to form a ring, or may be bonded to Q or L 21 or L 22 to form a ring. When there are a plurality of substituents T, they may be the same as or different from each other. A preferable range of the alicyclic ring, aromatic ring, or aromatic heterocyclic ring in Q includes a ring Cz described later. q is an integer of 1 to 5, an integer of 1 to 3 is preferred, 1 or 2 is more preferred, and 1 is further preferred.
Q may have a structure in which a plurality of alicyclic rings, a plurality of aromatic rings, a plurality of aromatic heterocyclic rings, an alicyclic ring and an aromatic ring, an alicyclic ring and an aromatic heterocyclic ring, and an aromatic ring and an aromatic heterocyclic ring are bonded. As a structure to which an aromatic ring is connected, the structure of said Formula Ar1-Ar5 is mentioned.
作為使用於壓印用硬化性組成物之多官能聚合性化合物,能夠例示下述第1群組及第2群組。然而,本發明並不限定於該等自不必敘述。第1群組為更佳。
第1群組
[化學式17]
第2群組
[化學式18]
As a polyfunctional polymerizable compound used for the curable composition for imprint, the following 1st group and 2nd group can be illustrated. However, the present invention is not limited to such self-explanatory. Group 1 is better.
Group 1
[Chemical Formula 17]
Group 2
[Chemical Formula 18]
壓印用硬化性組成物可包含除上述含環多官能聚合性化合物之外的其他多官能聚合性化合物。作為其他多官能聚合性化合物,由下述式(I-3)表示之化合物為較佳。
[化學式19]
L30
表示具有選自直鏈或分支的烷烴結構的基團(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、直鏈或分支的烯烴結構的基團(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、直鏈或分支的炔烴結構的基團(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)之至少1種之1+r價的基團。R25
及R26
分別獨立地表示氫原子或甲基。L25
及L26
分別獨立地表示單鍵或上述連結基L。L30
與L25
或L26
可經由或不經由連結基L鍵結而形成環。L25
、L26
及L30
可具有上述取代基T。取代基T可鍵結複數個而形成環,亦可與其他連結基鍵結而形成環。取代基T為複數個時,可以彼此相同,亦可彼此不同。r為1~4的整數,1~3的整數為較佳,1或2為更佳,1為進一步較佳。再者,L30
可介有雜連結基(O、S、NRN
)。介有雜連結基之個數按L30
的碳數1~6個時為1個之比例為較佳。The curable composition for imprint may contain a polyfunctional polymerizable compound other than the above-mentioned ring-containing polyfunctional polymerizable compound. As another polyfunctional polymerizable compound, the compound represented by following formula (I-3) is preferable.
[Chemical Formula 19]
L 30 represents a group having a linear or branched alkane structure (carbon number 1 to 12 is preferred, 1 to 6 is more preferred, 1 to 3 is more preferred), a linear or branched alkene structure Group (carbon number 2-12 is preferred, 2-6 is more preferred, 2-3 is more preferred), linear or branched alkyne structure group (carbon number 2-12 is preferred, 2 ~ 6 is more preferred, and 2 ~ 3 is more preferred) at least one kind of 1 + r valence group. R 25 and R 26 each independently represent a hydrogen atom or a methyl group. L 25 and L 26 each independently represent a single bond or the aforementioned linking group L. L 30 and L 25 or L 26 may form a ring by bonding with or without a linking group L. L 25 , L 26 and L 30 may have the above-mentioned substituent T. A plurality of substituents T may be bonded to form a ring, or may be bonded to another linking group to form a ring. When there are a plurality of substituents T, they may be the same as or different from each other. r is an integer of 1 to 4, an integer of 1 to 3 is preferred, 1 or 2 is more preferred, and 1 is further preferred. Furthermore, L 30 may have a hetero linking group (O, S, NR N ). It is preferable that the number of the intermedium linking groups is 1 when the carbon number of L 30 is 1 to 6.
作為使用於壓印用硬化性組成物之其他多官能聚合性化合物,例示有日本特開2014-170949號公報中記載之聚合性化合物中不具有環的多官能聚合性化合物,該等內容包含於本說明書。更具體而言,例如,例示有下述化合物。
[化學式20]
Examples of other polyfunctional polymerizable compounds used in the curable composition for imprint include polyfunctional polymerizable compounds having no ring among the polymerizable compounds described in Japanese Patent Application Laid-Open No. 2014-170949. These contents are included in This manual. More specifically, for example, the following compounds are exemplified.
[Chemical Formula 20]
作為環Cz,例示有以下芳香族環、芳香族雜環及脂環。
作為包含芳香族環之化合物中所含之芳香族環,碳數6~22者為較佳,6~18為更佳,6~10為進一步較佳。作為芳香族環的具體例,可舉出苯環、萘環、蒽環、菲環、萉環、茀環、苊烯環、聯苯環、茚環、二氫茚環、聯三伸苯環、嵌二萘環、䓛(chrysene)環、苝環、四氫萘環等。其中,苯環或萘環為較佳,苯環為更佳。芳香族環可取連結有複數個之結構,例如,可舉出聯苯環、聯二苯環。
作為芳香族雜環,碳數1~12者為較佳,1~6為更佳,1~5為進一步較佳。作為其具體例,可舉出噻吩環、呋喃環、吡咯環、咪唑環、吡唑環、三唑環、四唑環、噻唑環、噁唑環、吡啶環、嘧啶環、噠嗪環、異吲哚環、吲唑環、嘌呤環、喹嗪環、異喹啉環、喹啉環、酞嗪環、萘啶環、喹噁啉環、喹唑啉環、噌啉(cinnoline)環、咔唑環、吖啶環、啡嗪(phenazine)環、啡噻嗪(phenothiazine)環、啡㗁環等。
作為脂環,碳數3~22者為較佳,4~18為更佳,6~10為進一步較佳。作為其具體例,可舉出環丙烷環、環丁烷環、環丁烯環、環戊烷環、環己烷環、環己烯環、環庚烷環、環辛烷環、二環戊二烯環、四氫二環戊二烯環、八氫萘環、十氫萘環、六氫茚滿環、莰烷環、降冰片烷環、降冰片烯環、異降冰片烷環、三環癸烷環、四環十二烷環、金剛烷環等。Examples of the ring Cz include the following aromatic rings, aromatic heterocyclic rings, and alicyclic rings.
As the aromatic ring contained in the compound containing an aromatic ring, those having 6 to 22 carbon atoms are preferred, 6 to 18 are more preferred, and 6 to 10 are further preferred. Specific examples of the aromatic ring include a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, a fluorene ring, a fluorene ring, a pinene ring, a biphenyl ring, an indene ring, a dihydroindene ring, and a bitriphenylene ring. , Embedded dinaphthalene ring, chrysene ring, fluorene ring, tetrahydronaphthalene ring and so on. Among them, a benzene ring or a naphthalene ring is preferable, and a benzene ring is more preferable. The aromatic ring may have a structure in which a plurality of them are connected, and examples thereof include a biphenyl ring and a biphenyl ring.
As the aromatic heterocyclic ring, those having 1 to 12 carbon atoms are preferable, 1 to 6 are more preferable, and 1 to 5 are more preferable. Specific examples thereof include thiophene ring, furan ring, pyrrole ring, imidazole ring, pyrazole ring, triazole ring, tetrazole ring, thiazole ring, oxazole ring, pyridine ring, pyrimidine ring, pyridazine ring, isopropyl Indole ring, indazole ring, purine ring, quinazine ring, isoquinoline ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinazoline ring, cinnoline ring, An azole ring, an acridine ring, a phenazine ring, a phenothiazine ring, a morphine ring, and the like.
As the alicyclic ring, a carbon number of 3 to 22 is more preferable, 4 to 18 is more preferable, and 6 to 10 is further more preferable. Specific examples thereof include a cyclopropane ring, a cyclobutane ring, a cyclobutene ring, a cyclopentane ring, a cyclohexane ring, a cyclohexene ring, a cycloheptane ring, a cyclooctane ring, and dicyclopentane. Diene ring, tetrahydrodicyclopentadiene ring, octahydronaphthalene ring, decahydronaphthalene ring, hexahydroindane ring, pinane ring, norbornane ring, norbornene ring, isonorbornene ring, three Cyclodecane ring, tetracyclododecane ring, adamantane ring and the like.
多官能聚合性化合物相對於壓印用硬化性組成物中的總聚合性化合物含有30質量%以上為較佳,45質量%以上為更佳,50質量%以上為進一步較佳,55質量%以上為更較佳,可為60質量%以上,可進一步為70質量%以上。又,上限值小於95質量%為較佳,90質量%以下為進一步較佳,還能夠設為85質量%以下。
壓印用硬化性組成物可僅包含1種多官能聚合性化合物,亦可包含2種以上。包含2種以上時,總計量成為上述範圍為較佳。The polyfunctional polymerizable compound is preferably contained in an amount of 30% by mass or more, more preferably 45% by mass or more, more preferably 50% by mass or more, and 55% by mass or more with respect to the total polymerizable compound in the curable composition for imprinting. It is more preferably 60% by mass or more, and further 70% by mass or more. The upper limit value is preferably less than 95% by mass, more preferably 90% by mass or less, and can be 85% by mass or less.
The curable composition for imprint may contain only one kind of polyfunctional polymerizable compound, or may contain two or more kinds. When two or more kinds are included, the total measurement is preferably within the above range.
在本發明中使用之壓印用硬化性組成物係組成物的85質量%以上係聚合性化合物為較佳,90質量%以上係聚合性化合物為更佳,93質量%以上係聚合性化合物為進一步較佳。85% by mass or more of the polymerizable compound of the curable composition for imprint used in the present invention is a polymerizable compound, more preferably 90% by mass or more of the polymerizable compound, and 93% by mass or more of the polymerizable compound is Further preferred.
壓印用硬化性組成物的漢森溶解度參數(HSP)向量的:
(i)分散項成分(d成分)為14.0~20.0為較佳,15.0~19.0為更佳,16.0~18.5為進一步較佳;
(ii)極性項成分(p成分)為3.5~8.0為較佳,3.8~6.0為更佳,4.0~5.0為進一步較佳;
(iii)氫鍵項成分(h成分)為4.0~8.0為較佳,4.7~7.0為更佳,5.2~6.5為進一步較佳。
上述壓印用硬化性組成物的HSP向量的分散項成分、極性項成分、氫鍵項成分分別由後述之實施例中記載之方法設定。Hansen solubility parameter (HSP) vector for hardening composition for imprinting:
(I) The dispersion component (component d) is preferably 14.0 to 20.0, more preferably 15.0 to 19.0, and even more preferably 16.0 to 18.5;
(Ii) The polar component (p component) is preferably 3.5 to 8.0, more preferably 3.8 to 6.0, and more preferably 4.0 to 5.0;
(Iii) The hydrogen bonding term component (component h) is preferably 4.0 to 8.0, more preferably 4.7 to 7.0, and even more preferably 5.2 to 6.5.
The dispersion term component, the polar term component, and the hydrogen bond term component of the HSP vector of the hardening composition for imprint are set by methods described in Examples described later, respectively.
<<其他成分>>
壓印用硬化性組成物可含有聚合性化合物之外的添加劑。作為其他添加劑,可以包含聚合起始劑、界面活性劑、敏化劑、脫模劑、抗氧化劑、聚合抑制劑等。
作為能夠在本發明中使用之壓印用硬化性組成物的具體例,例示在日本特開2013-036027號公報、日本特開2014-090133號公報、日本特開2013-189537號公報中記載之組成物,並將該等內容編入本說明書。又,關於壓印用硬化性組成物的製備、膜(圖案形成層)的形成方法,亦能夠參閱上述公報的記載,並將該等內容編入本說明書。<< Other Ingredients >>
The curable composition for imprint may contain additives other than a polymerizable compound. Other additives may include a polymerization initiator, a surfactant, a sensitizer, a release agent, an antioxidant, a polymerization inhibitor, and the like.
Specific examples of the hardenable composition for imprint that can be used in the present invention are described in Japanese Patent Application Laid-Open No. 2013-036027, Japanese Patent Application Laid-Open No. 2014-090133, and Japanese Patent Application Laid-Open No. 2013-189537. Composition, and incorporate those contents into this manual. Regarding the preparation of the curable composition for imprint and the method for forming the film (pattern-forming layer), it is also possible to refer to the description of the above-mentioned publication and incorporate the contents into this specification.
<<物性值等>>
壓印用硬化性組成物的黏度為20.0mPa・s以下為較佳,15.0mPa・s以下為更佳,可為11.0mPa・s以下,亦可進一步為9.0mPa・s以下。作為上述黏度的下限值,並無特別限定,但是,例如為4.0mPa・以上,能夠進一步設為5.0mPa・s以上。< Physical properties and other values >>
The viscosity of the curable composition for imprinting is preferably 20.0 mPa ・ s or less, more preferably 15.0 mPa ・ s or less, and may be 11.0 mPa ・ s or less, and further may be 9.0 mPa ・ s or less. The lower limit of the viscosity is not particularly limited, but is, for example, 4.0 mPa ・ s or more, and can be further set to 5.0 mPa ・ s or more.
壓印用硬化性組成物的表面張力(γResist)為29.0mN/m以上為較佳,30.0mN/m以上為更佳,31.0mN/m以上為進一步較佳。藉由使用表面張力較高的壓印用硬化性組成物,提高毛細管力,且能夠進行壓印用硬化性組成物向鑄模圖案的高速填充。作為上述表面張力的上限值,並無特別限定,從賦予與下層膜的關係及噴墨適應性之觀點而言,42.0mN/m以下為較佳,40.0mN/m以下為更佳,亦可為38.0mN/m以下。The surface tension (γResist) of the hardening composition for imprint is preferably 29.0 mN / m or more, more preferably 30.0 mN / m or more, and further preferably 31.0 mN / m or more. By using a hardenable composition for imprint having a high surface tension, the capillary force is increased, and high-speed filling of the hardenable composition for imprint into a mold pattern can be performed. The upper limit value of the surface tension is not particularly limited. From the viewpoint of imparting the relationship with the underlayer film and the inkjet adaptability, 42.0 mN / m or less is more preferable, and 40.0 mN / m or less is more preferable. Can be 38.0mN / m or less.
壓印用硬化性組成物的Ohnishi參數為5.0以下為較佳,4.0以下為更佳,3.7以下為進一步較佳。壓印用硬化性組成物的Ohnishi參數的下限值並無特別限定,例如可為1.0以上,進一步為2.0以上。
對於壓印用硬化性組成物的聚合性化合物,分別將所有構成成分的碳原子、氫原子及氧原子的數代入下述公式從而能夠求出Ohnishi參數。
Ohnishi參數=碳原子、氫原子及氧原子的數之和/(碳原子的數-氧原子的數)The Ohnishi parameter of the hardenable composition for imprint is preferably 5.0 or less, more preferably 4.0 or less, and even more preferably 3.7 or less. The lower limit value of the Ohnishi parameter of the hardening composition for imprint is not particularly limited, and may be, for example, 1.0 or more, and further 2.0 or more.
For the polymerizable compound of the curable composition for imprint, the number of carbon atoms, hydrogen atoms, and oxygen atoms of all constituent components can be substituted into the following formula to obtain the Ohnishi parameter.
Ohnishi parameter = sum of the number of carbon atoms, hydrogen atoms and oxygen atoms / (number of carbon atoms-number of oxygen atoms)
壓印用硬化性組成物中所含之聚合性化合物的漢森溶解度參數(HSP)向量的:
(i)分散項成分(d成分)為14.0~20.0為較佳,15.0~19.0為更佳,16.0~18.5為進一步較佳;
(ii)極性項成分(p成分)為3.5~8.0為較佳,3.8~6.0為更佳,4.0~5.0為進一步較佳;
(iii)氫鍵項成分(h成分)為4.0~8.0為較佳,4.7~7.0為更佳,5.2~6.5為進一步較佳。
HSP向量的分散項成分、極性項成分、氫鍵項成分分別由在後述之實施例中記載之方法設定。計算HSP向量時,該成分為複數個時,至少1種滿足上述範圍為較佳,最大量成分滿足上述範圍為更佳。The Hansen solubility parameter (HSP) vector of the polymerizable compound contained in the hardening composition for imprint:
(I) The dispersion component (component d) is preferably 14.0 to 20.0, more preferably 15.0 to 19.0, and even more preferably 16.0 to 18.5;
(Ii) The polar component (p component) is preferably 3.5 to 8.0, more preferably 3.8 to 6.0, and more preferably 4.0 to 5.0;
(Iii) The hydrogen bonding term component (component h) is preferably 4.0 to 8.0, more preferably 4.7 to 7.0, and even more preferably 5.2 to 6.5.
The dispersion term component, the polar term component, and the hydrogen bond term component of the HSP vector are set by methods described in the examples described later. When calculating the HSP vector, when the component is plural, it is better that at least one kind satisfies the above range, and the maximum amount component satisfies the above range.
本發明中,壓印用硬化性組成物中的溶劑的含量為壓印用硬化性組成物的5質量%以下為較佳,3質量%以下為更佳,1質量%以下為進一步較佳。
壓印用硬化性組成物還能夠設為實質上不含有聚合物(重量平均分子量大於1,000為較佳,重量平均分子量大於2,000為更佳,進一步較佳為重量平均分子量大於10,000以上的聚合物)之態樣。實質上不含有聚合物係指,例如,聚合物的含量為壓印用硬化性組成物的0.01質量%以下,0.005質量%以下為較佳,完全不含有為更佳。In the present invention, the content of the solvent in the embossable curable composition is preferably 5% by mass or less, more preferably 3% by mass or less, and further preferably 1% by mass or less.
The curable composition for imprinting can also be made substantially free of polymers (preferably having a weight average molecular weight greater than 1,000, more preferably having a weight average molecular weight greater than 2,000, and even more preferably a polymer having a weight average molecular weight greater than 10,000) Like this. The fact that the polymer is not substantially contained means, for example, that the content of the polymer is 0.01% by mass or less of the curable composition for imprint, preferably 0.005% by mass or less, and more preferably not contained at all.
作為在本發明中使用之壓印用硬化性組成物的收容容器,能夠使用以往習知的收容容器。又,作為收容容器,以抑制雜質混入原料或組成物中之目的,使用由6種6層樹脂構成容器內壁之多層瓶或將6種樹脂設為7層結構之瓶亦較佳。作為該種容器,例如可舉出日本特開2015-123351號公報中記載之容器。As a storage container for the imprintable curable composition used in the present invention, a conventionally known storage container can be used. In addition, as a storage container, in order to prevent impurities from being mixed into the raw materials or the composition, it is also preferable to use a multi-layer bottle composed of six kinds of six-layer resin or a bottle having six resins in a seven-layer structure. As such a container, the container described in Unexamined-Japanese-Patent No. 2015-123351 is mentioned, for example.
<試劑盒>
本發明公開試劑盒,其包含壓印用下層膜形成組成物及包含聚合性化合物之壓印用硬化性組成物。
本發明的試劑盒中,依據脫離成分(由式(r1)或(r2)表示之化合物或者由式(r1-1)表示之化合物)的漢森溶解度參數與壓印用硬化性組成物的漢森溶解度參數且由下述數學式(H1)計算之ΔHSP值為5以下為較佳,7.0以下為更佳,5.0以下為進一步較佳、4.0以下為更較佳。作為下限值,可為0,但實際上為0.1以上。
ΔHSP=(4.0×ΔD2
+ΔP2
+ΔH2
)0.5
……(H1)
ΔD為壓印用硬化性組成物的漢森溶解度參數向量的分散項成分與脫離成分的漢森溶解度參數向量的分散項成分之差。
ΔP為壓印用硬化性組成物的漢森溶解度參數向量的極性項成分與脫離成分的漢森溶解度參數向量的極性項成分之差。
ΔH為壓印用硬化性組成物的漢森溶解度參數向量的氫鍵項成分與脫離成分的漢森溶解度參數向量的氫鍵項成分之差。< Kits >
The present invention discloses a kit comprising an underlayer film-forming composition for imprinting and a curable composition for imprinting including a polymerizable compound.
In the kit of the present invention, the Hansen solubility parameter of the release component (the compound represented by the formula (r1) or (r2) or the compound represented by the formula (r1-1)) and the quality of the sclerosing composition for imprinting are used. Mori solubility parameter and the ΔHSP value calculated from the following mathematical formula (H1) is preferably 5 or less, more preferably 7.0 or less, further preferably 5.0 or less, and more preferably 4.0 or less. The lower limit value may be 0, but it is actually 0.1 or more.
ΔHSP = (4.0 × ΔD 2 + ΔP 2 + ΔH 2 ) 0.5 …… (H1)
ΔD is the difference between the dispersion term component of the Hansen solubility parameter vector of the hardening composition for imprint and the dispersion term component of the Hansen solubility parameter vector of the detached component.
ΔP is the difference between the polar term component of the Hansen solubility parameter vector of the hardening composition for imprint and the polar term component of the Hansen solubility parameter vector of the detached component.
ΔH is the difference between the hydrogen bonding term component of the Hansen solubility parameter vector of the embossable hardening composition and the hydrogen bonding term component of the Hansen solubility parameter vector of the release component.
<積層體及其製造方法>
作為本發明的試劑盒的較佳實施形態,可舉出由該試劑盒形成之積層體。本實施形態的積層體具有由上述壓印用下層膜形成組成物形成之下層膜及由上述壓印用硬化性組成物形成且位於上述下層膜的表面之壓印層為較佳。其製造方法並無特別限定,但可舉出包含使用上述試劑盒,在由壓印用下層膜形成組成物形成之下層膜的表面適用壓印用硬化性組成物之製程之製造方法。此時,壓印用硬化性組成物藉由噴墨法(IJ法)適用於上述下層膜的表面為較佳。進而,積層體的製造方法包括在基板上將上述壓印用下層膜形成組成物適用為層狀之製程,且包括將適用為上述層狀之壓印用下層膜形成組成物以80~250℃(150~250℃為較佳)(製程溫度)加熱(烘烤)之製程為較佳。< Laminated body and its manufacturing method >
As a preferred embodiment of the kit of the present invention, a laminated body formed from the kit is mentioned. The laminated body of this embodiment preferably has an underlayer film formed of the above-mentioned underlayer film-forming composition for imprinting, and an imprint layer formed of the above-mentioned hardening composition for imprinting and located on the surface of the underlayer film. The manufacturing method is not particularly limited, but examples include a manufacturing method including the use of the kit and applying a hardening composition for imprinting on the surface of an underlayer film formed from the underlayer film-forming composition for imprinting. At this time, it is preferable that the curable composition for imprinting is applied to the surface of the above-mentioned underlayer film by an inkjet method (IJ method). Furthermore, a method for manufacturing a laminated body includes a process for applying the above-mentioned underlayer film-forming composition for imprinting on a substrate to a layered process, and further comprising applying the underlayer film-forming composition for imprinting applicable to the above-mentioned layer at 80 to 250 ° C. (150-250 ° C is preferred) (Processing temperature) The process of heating (baking) is better.
<硬化物圖案及其製造方法>
本發明的較佳實施形態之硬化物圖案的製造方法使用上述試劑盒製造硬化物圖案,該方法具有:下層膜形成製程,在基板上適用壓印用下層膜形成組成物而形成下層膜;適用製程,在上述下層膜的表面適用壓印用硬化性組成物;鑄模接觸製程,使上述壓印用硬化性組成物與具有用於轉印圖案形狀的圖案之鑄模接觸;光照射製程,向上述壓印用硬化性組成物照射光而形成硬化物;及脫模製程,分離上述硬化物與上述鑄模。
以下,按照圖1對形成硬化物圖案之方法(硬化物圖案的製造方法)進行說明。很顯然本發明的結構並不限定於圖示。< Hardened material pattern and its manufacturing method >
The method for manufacturing a hardened pattern according to a preferred embodiment of the present invention uses the above kit to produce a hardened pattern. The method includes: an underlayer film forming process, applying an underlayer film forming composition for imprint on a substrate to form an underlayer film; In the manufacturing process, a hardening composition for imprinting is applied to the surface of the lower layer film; a mold contact process is performed to bring the hardening composition for imprinting into contact with a mold having a pattern for transferring a pattern shape; a light irradiation process is applied to the above The curable composition for imprint is irradiated with light to form a cured product; and a mold release process is performed to separate the cured product from the mold.
Hereinafter, a method for forming a cured product pattern (a method for manufacturing a cured product pattern) will be described with reference to FIG. 1. Obviously, the structure of the present invention is not limited to the illustration.
<<下層膜形成製程>>
下層膜形成製程中,如圖1中的(1)及(2)所示,在基板1上形成下層膜2。下層膜在基板上將壓印用下層膜形成組成物適用為層狀而形成為較佳。<〈 Underlayer Film Formation Process 〉>
In the lower-layer film formation process, as shown in (1) and (2) in FIG. 1, an lower-layer film 2 is formed on the substrate 1. The underlayer film is preferably formed on a substrate by applying an underlayer film-forming composition for imprinting to a layer.
作為將壓印用下層膜形成組成物應用於基板上的方法,並無特別限定,能夠採用一般周知的適用方法。具體而言,作為適用方法,例如,例示有浸塗法、氣動塗佈法、簾式塗佈法、線棒塗佈法(wire bar coat)、凹版塗佈法、擠壓塗佈法、旋塗法、狹縫掃描法或噴墨法,旋塗法為較佳。
又,在基板上將壓印用下層膜形成組成物適用為層狀之後,利用熱揮發(乾燥)溶劑而形成作為薄膜之下層膜。A method for applying the underlayer film-forming composition for imprint to a substrate is not particularly limited, and a generally known and applicable method can be adopted. Specifically, examples of the applicable method include a dip coating method, a pneumatic coating method, a curtain coating method, a wire bar coat method, a gravure coating method, an extrusion coating method, and a spin coating method. A coating method, a slit scanning method, or an inkjet method is preferable, and a spin coating method is preferable.
Furthermore, after the imprinting underlayer film-forming composition is applied to a substrate on a substrate, the solvent is evaporated (dried) by heat to form an underlayer film as a thin film.
下層膜2的厚度為2nm以上為較佳,3nm以上為更佳,4nm以上為進一步較佳,可為5nm以上,亦可為7nm以上。又,下層膜的厚度為40nm以下為較佳,30nm以下為更佳,20nm以下為進一步較佳,可為15nm以下,進一步可為10nm以下。藉由將膜厚設為上述下限值以上,壓印用硬化性組成物在下層膜上的擴展性(潤濕性)得到提高,能夠形成壓印後的均勻的殘餘膜。藉由將膜厚設為上述上限值以下,存在壓印後的殘餘膜變薄,不易發生膜厚不均,殘餘膜的均勻性得到提高之傾向。The thickness of the lower layer film 2 is preferably 2 nm or more, more preferably 3 nm or more, even more preferably 4 nm or more, and may be 5 nm or more, or 7 nm or more. The thickness of the lower layer film is preferably 40 nm or less, more preferably 30 nm or less, even more preferably 20 nm or less, 15 nm or less, and further 10 nm or less. By setting the film thickness to be greater than the above-mentioned lower limit value, the spreadability (wetability) of the curable composition for imprint on the underlayer film is improved, and a uniform residual film can be formed after imprinting. By setting the film thickness to be equal to or less than the above-mentioned upper limit value, there is a tendency that the residual film after embossing becomes thin, uneven film thickness is unlikely to occur, and the uniformity of the residual film is improved.
作為基板的材質,並無特別限定,能夠參閱日本特開2010-109092號公報(對應US申請的公開號為美國專利申請公開第2011/0183127號說明書)的0103段的記載,該等內容編入本說明書。在本發明中,矽基板、玻璃基板、石英基板、藍寶石基板、矽碳化物(碳化矽)基板、氮化鎵基板、鋁基板、非晶氧化鋁基板、多晶氧化鋁基板以及由GaAsP、GaP、AlGaAs、InGaN、GaN、AlGaN、ZnSe、AlGa、InP或ZnO構成之基板。再者,作為玻璃基板的具體的材料例,可舉出鋁矽酸鹽玻璃、鋁硼矽酸鹽玻璃、鋇硼矽酸鹽玻璃。在本發明中,矽基板為較佳。The material of the substrate is not particularly limited, and it can be referred to the description in paragraph 0103 of Japanese Patent Application Laid-Open No. 2010-109092 (the publication number corresponding to the US application is the specification of US Patent Application Publication No. 2011/0183127), which is incorporated herein. Manual. In the present invention, a silicon substrate, a glass substrate, a quartz substrate, a sapphire substrate, a silicon carbide (silicon carbide) substrate, a gallium nitride substrate, an aluminum substrate, an amorphous alumina substrate, a polycrystalline alumina substrate, and GaAsP, GaP , AlGaAs, InGaN, GaN, AlGaN, ZnSe, AlGa, InP or ZnO. Specific examples of the material of the glass substrate include aluminosilicate glass, aluminoborosilicate glass, and barium borosilicate glass. In the present invention, a silicon substrate is preferred.
<<適用製程>>
在適用製程中,例如,如圖1中的(3)所示,在上述下層膜2的表面適用壓印用硬化性組成物3。
作為壓印用硬化性組成物的適用方法,並無特別限定,能夠參閱日本特開2010-109092號公報(對應US申請的公開號為美國專利申請公開第2011/0199592號說明書)的0102段的記載,該內容編入本說明書。上述壓印用硬化性組成物藉由噴墨法適用於上述下層膜的表面為較佳。又,可以藉由多重塗佈進行壓印用硬化性組成物的塗佈。在藉由噴墨法等在下層膜的表面配置液滴之方法中,液滴的量為1~20pL左右為較佳,液滴隔開間隔配置在下層膜表面為較佳。作為液滴間隔,10~1000μm的間隔為較佳。為噴墨法的情況下,液滴間隔設為噴墨的噴嘴的配置間隔。
進而,下層膜2與適用於下層膜上之膜狀的壓印用硬化性組成物3的體積比為1:1~500為較佳,1:10~300為更佳,1:50~200為進一步較佳。
又,本發明的較佳實施形態之積層體的製造方法為使用本發明的試劑盒製造的方法,該方法包含在由上述壓印用下層膜形成組成物形成之下層膜的表面適用壓印用硬化性組成物之製程。進而,本發明的較佳實施形態之積層體的製造方法包括在基板上將上述壓印用下層膜形成組成物適用為層狀之製程,且包括在80~250℃(150℃以上且250℃以下為較佳)下加熱(烘烤)適用為上述層狀之壓印用下層膜形成組成物之製程為較佳。加熱時間能夠設為30秒鐘~5分鐘。<< Applicable Process >>
In the applicable process, for example, as shown in (3) of FIG. 1, the hardening composition 3 for imprint is applied to the surface of the lower layer film 2.
The method for applying the curable composition for imprinting is not particularly limited, and reference can be made to paragraph 0102 of Japanese Patent Application Laid-Open No. 2010-109092 (the publication number corresponding to US application is US Patent Application Publication No. 2011/0199592) This content is incorporated into this manual. The curable composition for imprint is preferably applied to the surface of the underlayer film by an inkjet method. Moreover, the hardening composition for imprints can be applied by multiple application. In the method of arranging droplets on the surface of the lower film by an inkjet method or the like, the amount of the droplets is preferably about 1 to 20 pL, and the droplets are preferably arranged on the surface of the lower film at intervals. The droplet interval is preferably an interval of 10 to 1000 μm. In the case of the inkjet method, the droplet interval is set as the arrangement interval of the nozzles for inkjet.
Further, the volume ratio of the lower layer film 2 to the film-like imprintable curable composition 3 applied to the lower layer film is preferably 1: 1 to 500, more preferably 1:10 to 300, and 1:50 to 200. Is even better.
In addition, a method for manufacturing a laminated body according to a preferred embodiment of the present invention is a method for manufacturing a kit using the present invention, the method comprising applying an imprint on a surface of an underlayer film formed from the above-mentioned underlayer film forming composition for imprinting. Process for hardening composition. Furthermore, a method for manufacturing a multilayer body according to a preferred embodiment of the present invention includes a process for applying the above-mentioned lower-layer film-forming composition for imprinting on a substrate to a layered process, and the process is performed at 80 to 250 ° C (150 ° C or higher and 250 ° C). The following is preferred.) The heating (baking) process suitable for the above-mentioned layered underlayer film-forming composition for imprinting is preferred. The heating time can be set from 30 seconds to 5 minutes.
<<鑄模接觸製程>>
例如,如圖1中的(4)所示,在鑄模接觸製程中,使上述壓印用硬化性組成物3與具有用於轉印圖案形狀的圖案之鑄模4接觸。藉由經過該種製程,獲得所希望的硬化物圖案(壓印圖案)。
具體而言,為了在膜狀的壓印用硬化性組成物轉印所希望的圖案,在膜狀的壓印用硬化性組成物3的表面覆蓋鑄模4。<〈 Mold contact process 〉>
For example, as shown in (4) in FIG. 1, in the mold contact process, the hardening composition 3 for imprint is brought into contact with a mold 4 having a pattern for transferring a pattern shape. Through this process, a desired hardened pattern (embossed pattern) is obtained.
Specifically, in order to transfer a desired pattern to the film-like embossable curable composition, the surface of the film-like embossable curable composition 3 is covered with the mold 4.
鑄模可為光透射性的鑄模,亦可為非光透射性的鑄模。使用光透射性的鑄模時,從鑄模側向壓印用硬化性組成物3照射光為較佳。另一方面,使用非光透射性的鑄模時,作為基板,使用光透射性基板,並從基板側照射光為較佳。在本發明中,使用光透射性鑄模,從鑄模側照射光為更佳。
能夠在本發明中使用之鑄模為具有用於轉印之圖案之鑄模。上述鑄模所具有之圖案例如能夠藉由光刻或電子束掃描法等按照所希望之加工精度形成,但在本發明中,鑄模圖案製造方法並無特別限定。又,還能夠將藉由本發明的較佳實施形態之硬化物圖案製造方法形成之圖案用作鑄模。
構成在本發明中使用之光透射性鑄模之材料並無特別限定,例示有玻璃、石英、聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯樹脂等光透射性樹脂、透明金屬蒸鍍膜、聚二甲基矽氧烷等柔軟膜、光硬化膜、金屬膜等,石英為較佳。
作為在本發明中使用光透射性基板時使用之非光透射型鑄模材,並無特別限定,只要具有規定強度即可。具體而言,例示有陶瓷材料、蒸鍍膜、磁性膜、反射膜、Ni、Cu、Cr、Fe等金屬基板、SiC、矽、氮化矽、多晶矽、氧化矽、非晶矽等基板等,但並無特別限定。The mold may be a light-transmitting mold or a non-light-transmitting mold. When using a light-transmitting mold, it is preferable to irradiate light to the curable composition 3 for imprint from the mold side. On the other hand, when using a non-light-transmitting mold, it is preferable to use a light-transmitting substrate as the substrate and irradiate light from the substrate side. In the present invention, it is more preferable to use a light-transmitting mold and irradiate light from the mold side.
The mold which can be used in the present invention is a mold having a pattern for transfer. The pattern possessed by the mold can be formed, for example, by photolithography, electron beam scanning, or the like with a desired processing accuracy. However, in the present invention, the method for producing a mold pattern is not particularly limited. The pattern formed by the method for manufacturing a cured product pattern according to the preferred embodiment of the present invention can also be used as a mold.
The material constituting the light-transmitting mold used in the present invention is not particularly limited, and examples thereof include light-transmitting resins such as glass, quartz, polymethyl methacrylate (PMMA), polycarbonate resin, transparent metal vapor-deposited films, and polymer materials. For soft films such as dimethylsilane, light-hardened films, metal films, and the like, quartz is preferred.
The non-light-transmitting mold material used when the light-transmitting substrate is used in the present invention is not particularly limited as long as it has a predetermined strength. Specific examples include ceramic materials, vapor-deposited films, magnetic films, reflective films, metal substrates such as Ni, Cu, Cr, and Fe, substrates such as SiC, silicon, silicon nitride, polycrystalline silicon, silicon oxide, and amorphous silicon. It is not particularly limited.
在上述硬化物圖案的製造方法中,使用壓印用硬化性組成物進行壓印微影術時,將鑄模壓力設為10氣壓以下為較佳。藉由將鑄模壓力設為10氣壓以下,存在鑄模或基板不易變形且圖案精度得到提高之傾向。又,從存在由於加壓較低而能夠縮小裝置之傾向之觀點而言亦較佳。鑄模壓力從碰觸鑄模凸部之壓印用硬化性組成物的殘餘膜變少,並且能夠確保鑄模轉印的均勻性之範圍選擇為較佳。
又,在氦氣或凝結性氣體或者包含氦氣和凝結性氣體雙方之氛圍下進行壓印用硬化性組成物與鑄模的接觸亦較佳。In the manufacturing method of the said hardened | cured material pattern, when imprint lithography is performed using the hardenable composition for imprinting, it is preferable to set the mold pressure to 10 atmospheres or less. When the mold pressure is set to 10 atmospheres or less, there is a tendency that the mold or the substrate is not easily deformed and the pattern accuracy is improved. Further, it is also preferable from the viewpoint that the device can be downsized due to low pressure. The mold pressure is reduced from the residual film of the curable composition for imprint which touches the convex part of the mold, and the range capable of ensuring the uniformity of the mold transfer is preferably selected.
It is also preferable to contact the hardening composition for imprint and the mold in an atmosphere containing helium or a condensable gas, or an atmosphere containing both helium and a condensable gas.
<<光照射製程>>
在光照射製程中,向上述壓印用硬化性組成物照射光而形成硬化物。光照射製程中的光照射的照射量只要充分大於硬化所需的最小限的照射量即可。硬化所需的照射量藉由調查壓印用硬化性組成物的不飽和鍵的消耗量等而適當進行確定。
照射之光的種類並無特別限定,例示有紫外光。
又,在適用於本發明之壓印微影術中,光照射時的基板溫度通常設為室溫,但為了提高反應性,亦可加熱的同時進行光照射。作為光照射的準備階段,若設為真空狀態,則在防止混入氣泡、抑制因混入氧而引起之反應性降低、鑄模與壓印用硬化性組成物的密接性提高上有效果,因此可以在真空狀態下進行光照射。又,上述硬化物圖案製造方法中,光照射時的較佳真空度為10-1
Pa至正常壓力的範圍。
進行曝光時,將曝光照度設為1~500mW/cm2
範圍為較佳,設為10~400mW/cm2
範圍為更佳。曝光的時間並無特別限定,0.01~10秒為較佳,0.5~1秒為更佳。曝光量設為5~1000mJ/cm2
範圍為較佳,設為10~500mJ/cm2
範圍為更佳。
在上述硬化物圖案製造方法中,在硬化藉由光照射膜狀的壓印用硬化性組成物(圖案形成層)之後,依據需要,還可包含對硬化之圖案加熱並再進行硬化之製程。作為用於在光照射後加熱硬化壓印用硬化性組成物的溫度,150~280℃為較佳,200~250℃為更佳。又,作為施加熱之時間,5~60分鐘為較佳,15~45分鐘為進一步較佳。<< Light irradiation process >>
In the light irradiation process, the hardening composition for imprint is irradiated with light to form a hardened material. The irradiation amount of light irradiation in the light irradiation process may be sufficiently larger than the minimum irradiation amount required for curing. The amount of irradiation required for curing is appropriately determined by investigating the consumption of unsaturated bonds in the curable composition for imprint and the like.
The type of light to be irradiated is not particularly limited, and ultraviolet light is exemplified.
Moreover, in the imprint lithography applied to the present invention, the substrate temperature during light irradiation is usually set to room temperature, but in order to improve reactivity, light irradiation may be performed while heating. When the vacuum state is used as the preparation stage for light irradiation, it is effective in preventing the inclusion of bubbles, suppressing the decrease in the reactivity caused by the incorporation of oxygen, and improving the adhesion between the mold and the hardening composition for imprinting. Light irradiation was performed in a vacuum state. Moreover, in the said hardened | cured material pattern manufacturing method, the preferable vacuum degree at the time of light irradiation is the range of 10-1 Pa to normal pressure.
When exposed, the exposure illuminance is set to 1 ~ 500mW / cm 2 and is preferred, to 10 ~ 400mW / cm 2 more preferably in the range of. The exposure time is not particularly limited, but is preferably 0.01 to 10 seconds, and more preferably 0.5 to 1 second. The exposure amount is preferably in the range of 5 to 1000 mJ / cm 2 , and more preferably in the range of 10 to 500 mJ / cm 2 .
In the above-mentioned method for manufacturing a cured product pattern, after curing the film-shaped imprintable curable composition (pattern-forming layer) by light, the process may further include a process of heating and curing the cured pattern, if necessary. The temperature for heating and hardening the curable composition for imprinting after light irradiation is preferably 150 to 280 ° C, and more preferably 200 to 250 ° C. The time for applying heat is preferably 5 to 60 minutes, and more preferably 15 to 45 minutes.
<<脫模製程>>
在脫模製程中,分離上述硬化物與上述鑄模(圖1中的(5))。獲得之硬化物圖案如後述能夠利用於各種用途。
亦即,在本發明中公開有在上述下層膜的表面還具有由壓印用硬化性組成物形成之硬化物圖案之積層體。又,包含在本發明中使用之壓印用硬化性組成物之圖案形成層的膜厚依據使用之用途而不同,但為0.01μm~30μm左右。
另外,如後述,還能夠進行蝕刻等。<< Release Process >>
In the demolding process, the hardened material is separated from the mold ((5) in FIG. 1). The obtained hardened material pattern can be used in various applications as described later.
That is, in the present invention, there is disclosed a laminated body further having a hardened pattern formed of a hardenable composition for imprint on the surface of the underlayer film. Moreover, although the film thickness of the pattern formation layer containing the hardening composition for imprints used by this invention differs depending on the use used, it is about 0.01 micrometer-30 micrometers.
In addition, as described later, etching and the like can be performed.
<硬化物圖案與其適用>
如上所述,藉由上述硬化物圖案的製造方法形成之硬化物圖案能夠用作使用於液晶顯示裝置(LCD)等中之永久膜或半導體元件製造用蝕刻抗蝕劑(微影術用遮罩)。
尤其,在本發明中公開電路基板的製造方法,該方法包含藉由本發明的較佳實施形態之硬化物圖案的製造方法獲得硬化物圖案之製程。進而,本發明的較佳實施形態之電路基板的製造方法中,可具有將藉由上述硬化物圖案的製造方法獲得之硬化物圖案作為遮罩在基板上進行蝕刻或離子植入之製程及形成電子構件之製程。上述電路基板係半導體元件為較佳。進而,在本發明中公開電子設備的製造方法,該方法具有藉由上述電路基板的製造方法獲得電路基板之製程及將上述電路基板與控制上述電路基板之控制機構連結之製程。
又,利用藉由上述硬化物圖案製造方法形成之圖案在液晶顯示裝置的玻璃基板形成網格圖案,藉此能夠廉價地製造反射或吸收較少,且大屏幕尺寸(例如55英吋、大於60英吋)的偏光板。例如,能夠製造日本特開2015-132825號公報或國際公開第2011/132649號中記載之偏光板。再者,1英吋為25.4mm。
如圖1中的(6)、圖1中的(7)所示,由本發明形成之硬化物圖案作為蝕刻抗蝕劑(微影術用遮罩)亦有用。將硬化物圖案用作蝕刻抗蝕劑時,首先,作為基板使用例如形成SiO2
等薄膜之矽基板(矽晶圓等)等,且藉由上述硬化物圖案製造方法在基板上例如形成奈米或微米級微細的硬化物圖案。在本發明中,尤其能夠形成奈米級的微細圖案,進而在還能夠形成尺寸為50nm以下,尤其為30nm以下的圖案之一點上有效。關於由上述硬化物圖案製造方法形成之硬化物圖案的尺寸的下限值並無特別限定,例如,能夠設為1nm以上。
作為較佳實施形態,亦可舉出具有藉由硬化物圖案的製造方法在基板上獲得硬化物圖案之製程及使用所獲得之上述硬化物圖案在上述基板進行蝕刻之製程之壓印用鑄模的製造方法。
濕式蝕刻時使用氟化氫等進行蝕刻,乾式蝕刻時使用CF4
等蝕刻氣體進行蝕刻,藉此能夠在基板上形成所希望的硬化物圖案。硬化物圖案尤其對乾式蝕刻之蝕刻耐性良好。亦即,藉由上述硬化物圖案製造方法形成之圖案較佳地用作微影術用遮罩。< The hardened pattern and its application >
As described above, the hardened pattern formed by the method for manufacturing a hardened pattern can be used as a permanent film used in a liquid crystal display device (LCD), etc., or as an etching resist (mask for lithography) for semiconductor device manufacturing. ).
In particular, the present invention discloses a method for manufacturing a circuit board, which includes a process of obtaining a hardened pattern by a method for manufacturing a hardened pattern according to a preferred embodiment of the present invention. Furthermore, the method for manufacturing a circuit board according to a preferred embodiment of the present invention may include a process and formation of etching or ion implantation on the substrate using the hardened pattern obtained by the above-mentioned hardened pattern manufacturing method as a mask. Process of electronic components. The circuit board-based semiconductor element is preferably. Furthermore, a method for manufacturing an electronic device is disclosed in the present invention. The method includes a process for obtaining a circuit board by the method for manufacturing a circuit board and a process for connecting the circuit board to a control mechanism that controls the circuit board.
In addition, a grid pattern is formed on the glass substrate of the liquid crystal display device by using the pattern formed by the above-mentioned hardened pattern manufacturing method, thereby making it possible to inexpensively manufacture a large screen size (eg, 55 inches, greater than 60 inches with less reflection or absorption). Inch) polarizer. For example, a polarizing plate described in Japanese Patent Application Laid-Open No. 2015-132825 or International Publication No. 2011/132649 can be manufactured. Furthermore, 1 inch is 25.4 mm.
As shown in (6) in FIG. 1 and (7) in FIG. 1, the hardened pattern formed by the present invention is also useful as an etching resist (mask for lithography). When a hardened pattern is used as an etching resist, first, a silicon substrate (silicon wafer, etc.), for example, a thin film of SiO 2 or the like is used as a substrate, and a nano pattern is formed on the substrate by the above-mentioned hardened pattern manufacturing method, for example. Or micron-level fine hardened pattern. In the present invention, it is particularly effective to form a nano-scale fine pattern, and it is also possible to form a pattern having a size of 50 nm or less, especially 30 nm or less. The lower limit value of the size of the hardened | cured material pattern formed by the said hardened | cured material pattern manufacturing method is not specifically limited, For example, it can be 1 nm or more.
As a preferred embodiment, a process for obtaining a hardened pattern on a substrate by a method for manufacturing a hardened pattern and a process for embossing a mold using the obtained hardened pattern to etch the substrate can also be mentioned. Production method.
In wet etching, etching is performed using hydrogen fluoride or the like, and in dry etching, etching gas such as CF 4 is used to form a desired hardened pattern on the substrate. The hardened material pattern is particularly excellent in etching resistance against dry etching. That is, the pattern formed by the above-mentioned hardened pattern manufacturing method is preferably used as a mask for lithography.
圖2係示意地表示藉由噴墨法在下層膜的表面塗佈壓印用硬化性組成物之情況下的壓印用硬化性組成物的潤濕擴展狀態之俯視圖。壓印用硬化性組成物藉由噴墨(IJ)法適用時,例如,如圖2所示,在下層膜21的表面以等間隔滴加壓印用硬化性組成物22的液滴(圖2中的(a))。若在此接觸鑄模,則上述液滴在下層膜21上擴展,從而成為膜狀的壓印用硬化性組成物22a、22b、22c(圖2中的(b)、圖2中的(c)、圖2中的(d))。然而,壓印用硬化性組成物不會均勻地擴展,例如,若在圖2中的(c)中潤濕擴展停止,則在下層膜21上形成壓印用硬化性組成物22b的狀態沒有完全擴展之膜。亦即,有時存在膜厚較薄或沒有膜的區域23的情況。如此,則在鑄模的圖案上產生未充分填充壓印用硬化性組成物之部分,從而導致在壓印層產生沒有圖案的部分。例如,在將如上的將局部中有缺損或存在厚度不充分的部分之壓印層的圖案作為遮罩實施蝕刻時,在膜厚較薄的區域至沒有膜的區域23與除此之外的區域22b中發生蝕刻不均,從而很難遍及整個壓印區域均勻地蝕刻並轉印所希望的圖案形狀。
相對於此,依本發明的壓印用下層膜形成組成物形成之下層膜與壓印用硬化性組成物的表面張力得到改善且潤濕性得到提高。因此,成為更可靠地擴展到圖2中的(d)的狀態的各個角落之壓印用硬化性組成物22c。其結果,壓印用硬化性組成物遍及整體可靠且充分填充於鑄模,在所形成之壓印層中,能夠實現厚度上沒有不均的良好的圖案化。又,藉由填充性的提高能夠進行高速壓印,進而帶來處理量的改善。
再者,在上述說明中,舉出藉由噴墨法在下層膜上適用壓印用硬化性組成物之例子對本發明的較佳實施形態之作用機制進行說明,但本發明並不被此限定而解釋。例如,網版塗佈或旋塗等中,良好的潤濕性和優異之填充性亦與加工上及產品品質上的優點相關,能夠適當地發揮發明效果。FIG. 2 is a plan view schematically showing a state of wetting and spreading of the hardening composition for imprinting when the hardening composition for imprinting is applied to the surface of the underlayer film by an inkjet method. When the hardening composition for imprinting is applied by the inkjet (IJ) method, for example, as shown in FIG. 2, the liquid droplets of the hardening composition 22 for imprinting are dripped at regular intervals on the surface of the lower film 21 (FIG. 2). (A) in 2). When the mold is contacted here, the above-mentioned droplets spread on the lower layer film 21 and become film-like hardening compositions 22a, 22b, and 22c for imprinting ((b) in FIG. 2 and (c) in FIG. 2 ((D) in Figure 2). However, the hardening composition for imprinting does not spread uniformly. For example, if the wetting expansion stops in (c) in FIG. 2, the state of forming the hardening composition 22b for imprinting on the lower film 21 is not present. Fully expanded film. That is, there may be a case where the film thickness is thin or there is no region 23. In this manner, a portion of the mold which is not sufficiently filled with the hardening composition for imprint is generated in the pattern of the mold, and a portion without a pattern is generated in the imprint layer. For example, when the pattern of the imprinted layer with a defect or an insufficient thickness in a part is used as a mask as described above, the area from the thin film thickness to the area without the film 23 and the other The uneven etching occurs in the region 22b, making it difficult to uniformly etch and transfer a desired pattern shape throughout the entire imprinted region.
In contrast, according to the present invention, the surface tension between the underlayer film and the hardening composition for imprint formation is improved, and the wettability is improved. Therefore, the curable composition 22c for imprinting is expanded more reliably to each corner of the state of (d) in FIG. 2. As a result, the curable composition for imprint can be reliably and sufficiently filled in the mold throughout the entirety, and a good patterning without unevenness in thickness can be achieved in the formed imprint layer. In addition, high-speed embossing can be performed by improving the filling property, which leads to improvement in throughput.
In addition, in the above description, an example in which the hardening composition for imprint is applied to the underlayer film by the inkjet method is described to explain the action mechanism of the preferred embodiment of the present invention, but the present invention is not limited thereto. And explain. For example, in screen coating or spin coating, good wettability and excellent filling properties are also related to advantages in processing and product quality, and the effects of the invention can be appropriately exerted.
具體而言,由本發明形成之圖案能夠較佳地使用於導引圖案等的製作,該導引圖案用於使用如下的自己組織化之微細圖案形成(directed self-assembly、DSA(定向自己組裝)),亦即磁盤等的記錄媒體、固體攝像元件等受光元件、LED(light emitting diode(發光二極管))或有機EL(有機電致發光)等發光元件、液晶顯示裝置(LCD)等光器件、衍射光柵、浮雕全息、光波導、濾光器、微透鏡陣列等光學組件、薄膜晶體管、有機晶體管、濾色器、防反射膜、偏光板、偏光元件、光學膜、柱材等平板顯示器用構件、奈米生物器件、免疫分析晶片、脫氧核糖核酸(DNA)分離晶片、微反應器、光子液晶、嵌段共聚物。
[實施例]Specifically, the pattern formed by the present invention can be preferably used for the production of a guide pattern or the like, which is used to form a self-organized fine pattern (directed self-assembly, DSA (directed self-assembly)) ), That is, recording media such as magnetic disks, light-receiving elements such as solid-state imaging elements, light-emitting elements such as LED (light emitting diode) or organic EL (organic electroluminescence), optical devices such as liquid crystal display devices (LCD), Optical components such as diffraction gratings, relief holograms, optical waveguides, filters, microlens arrays, thin film transistors, organic transistors, color filters, anti-reflection films, polarizers, polarizers, optical films, pillars, and other flat panel display components Nano-devices, immunoassay wafers, DNA separation wafers, microreactors, photonic liquid crystals, block copolymers.
[Example]
以下舉出實施例進一步對本發明進行具體說明。以下實施例中所示出之材料、使用量、比例、處理內容、處理順序等只要不脫離本發明的主旨,能夠適當進行變更。因此,本發明的範圍並不限定於以下所示出之具體例。The following examples further illustrate the present invention. The materials, usage amounts, proportions, processing contents, processing sequence, and the like shown in the following examples can be appropriately changed as long as they do not depart from the gist of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below.
<聚合物G-1的合成例>
向流動有N2
之三口燒瓶加入甲醇(MeOH)(300g)、5-Bromoisophthalic Acid(5-溴異酞酸)(Tokyo Chemical Industry Co.,Ltd.製、10g)、濃硫酸(1mL),並加溫到90℃且進行了4小時熟化。之後,進行了減壓濃縮。向分液漏斗加入濃縮物和乙酸乙酯(500g)、3%碳酸氫鈉水溶液(300g)並進行了攪拌。濃縮有機層而合成了目標化合物(中間物G-1A)。<Synthesis example of polymer G-1>
To a three-necked flask with N 2 flowing, methanol (MeOH) (300 g), 5-Bromoisophthalic Acid (5-bromoisophthalic acid) (manufactured by Tokyo Chemical Industry Co., Ltd., 10 g), and concentrated sulfuric acid (1 mL) were added, and The mixture was heated to 90 ° C and aged for 4 hours. Then, it concentrated under reduced pressure. The concentrate, ethyl acetate (500 g), and a 3% aqueous sodium hydrogen carbonate solution (300 g) were added to the separatory funnel and stirred. The organic layer was concentrated to synthesize the target compound (intermediate G-1A).
向流動有N2 之三口燒瓶加入四氫呋喃(THF)(300g)、G-1A(10g),冷卻到0℃,並一點一點地加入LiAlH4 (FUJIFILM Wako Pure Chemical Corporation製、3g),且進行了2小時熟化。之後,加入水(3g)、15%氫氧化鈉水溶液(3g)、水(9g),並進行了1小時熟化。之後,藉由進行過濾並濃縮濾液而合成了目標化合物(中間物G-1B)。To a three-necked flask with N 2 flowing, tetrahydrofuran (THF) (300 g) and G-1A (10 g) were cooled to 0 ° C, and LiAlH 4 (manufactured by FUJIFILM Wako Pure Chemical Corporation, 3 g) was added little by little; It was aged for 2 hours. Thereafter, water (3 g), a 15% aqueous sodium hydroxide solution (3 g), and water (9 g) were added, and the mixture was aged for 1 hour. Thereafter, the target compound (intermediate G-1B) was synthesized by filtering and concentrating the filtrate.
向流動有N2 之三口燒瓶加入DMF(300g)、咪唑(8g)、G-1B(10g),冷卻到0℃,並一點一點地加入tert-Butyldimethylchlorosilane(Tokyo Chemical Industry Co.,Ltd.製、18g),且進行了2小時熟化。之後,進行了加壓濃縮。向分液漏斗加入濃縮物和乙酸乙酯(500g)、3%碳酸氫鈉水溶液(300g)並進行了攪拌。濃縮有機層並由矽膠色層法進行純化而合成了目標化合物(中間物G-1C)。Add DMF (300g), imidazole (8g), G-1B (10g) to a three-necked flask with N 2 flowing, cool to 0 ° C, and add tert-Butyldimethylchlorosilane (Tokyo Chemical Industry Co., Ltd.) little by little. (18g), and aged for 2 hours. Then, it concentrated under pressure. The concentrate, ethyl acetate (500 g), and a 3% aqueous sodium hydrogen carbonate solution (300 g) were added to the separatory funnel and stirred. The target compound (intermediate G-1C) was synthesized by concentrating the organic layer and purifying it by a silica gel layer method.
向流動有N2 之三口燒瓶加入Mg(1g)、G-1C(10g)、THF(100g),冷卻到0℃並進行了1小時熟化。之後,一點一點地加入丙酮(2g),並進行了2小時熟化。之後,進行了減壓濃縮。向分液漏斗加入濃縮物和乙酸乙酯(500g)、3%碳酸氫鈉水溶液(300g)並進行了攪拌。濃縮有機層並由矽膠色層法進行純化而合成了目標化合物(中間物G-1D)。Mg (1 g), G-1C (10 g), and THF (100 g) were added to a three-necked flask flowing N 2, and the mixture was cooled to 0 ° C. and aged for 1 hour. Thereafter, acetone (2 g) was added little by little, and the mixture was aged for 2 hours. Then, it concentrated under reduced pressure. The concentrate, ethyl acetate (500 g), and a 3% aqueous sodium hydrogen carbonate solution (300 g) were added to the separatory funnel and stirred. The target compound (intermediate G-1D) was synthesized by concentrating the organic layer and purifying it by a silica gel layer method.
向流動有N2 之三口燒瓶加入G-1D(10g)、環己烷(100g),冷卻到0℃,並滴加20%丁基鋰環己烷溶液(Tokyo Chemical Industry Co.,Ltd.製、12mL)且進行了1小時熟化。之後,滴加甲基丙烯醯氯(Tokyo Chemical Industry Co.,Ltd.製、3g)並進行了1小時熟化。之後,加入THF(100g)、1M HCl水溶液,並進行了5小時熟化。之後,加入乙酸乙酯(1000g)、3%碳酸氫鈉水溶液(300g)並進行了攪拌。濃縮有機層並由矽膠色層法進行純化而合成了目標化合物(中間物G-1E)。To a three-necked flask with N 2 flowing, G-1D (10 g) and cyclohexane (100 g) were added, cooled to 0 ° C, and a 20% butyllithium cyclohexane solution (manufactured by Tokyo Chemical Industry Co., Ltd.) was added dropwise. , 12 mL) and aged for 1 hour. After that, methacrylic acid chloride (manufactured by Tokyo Chemical Industry Co., Ltd., 3 g) was added dropwise, and the mixture was aged for 1 hour. Thereafter, THF (100 g) and a 1 M aqueous HCl solution were added, and the mixture was aged for 5 hours. Thereafter, ethyl acetate (1000 g) and a 3% aqueous sodium hydrogen carbonate solution (300 g) were added and stirred. The target compound (intermediate G-1E) was synthesized by concentrating the organic layer and purifying it by a silica gel layer method.
向流動有N2 之三口燒瓶加入PGMEA(30g)並加溫到60℃。在PGMEA(70g)中溶解2-Hydroxyethyl Methacrylate(甲基丙烯酸2-羥乙酯)(Tokyo Chemical Industry Co.,Ltd.製、13g、100mmol)、G-1E(26g、100.0mmol)、光自由基聚合起始劑(FUJIFILM Wako Pure Chemical Corporation製、V-65、1.0g、4.0mmol),並在上述燒瓶的內部溫度不超過65℃之溫度下經2小時滴加所獲得之混合物,並且在90℃下進行了4小時熟化。之後,冷卻到25℃。向另一三口燒瓶加入二異丙醚(435.5g)及己烷(186.6g),冷卻到0℃並進行了攪拌。在不超過5℃之溫度下經30分鐘向另一三口燒瓶的混合液滴加上述燒瓶中的反應液,並進行了1小時攪拌。之後,靜置1小時,進行了減壓過濾。藉由減壓乾燥所獲得之粉末而合成了目標化合物(中間物G-1F)。PGMEA (30 g) was added to a three-necked flask with N 2 flowing and warmed to 60 ° C. Dissolve 2-Hydroxyethyl Methacrylate (made by Tokyo Chemical Industry Co., Ltd., 13g, 100mmol), G-1E (26g, 100.0mmol), photo radical in PGMEA (70g) A polymerization initiator (FUJIFILM Wako Pure Chemical Corporation, V-65, 1.0 g, 4.0 mmol), and the obtained mixture was added dropwise over a period of 2 hours at a temperature not exceeding 65 ° C inside the flask, and at 90 ° C. The aging was performed at 4 ° C for 4 hours. After that, it was cooled to 25 ° C. Diisopropyl ether (435.5 g) and hexane (186.6 g) were added to another three-necked flask, and the mixture was cooled to 0 ° C and stirred. The reaction liquid in the flask was added dropwise to the mixed liquid in another three-necked flask over a period of 30 minutes at a temperature not exceeding 5 ° C., and stirred for 1 hour. Then, it was left to stand for 1 hour, and filtered under reduced pressure. The target compound (intermediate G-1F) was synthesized by drying the obtained powder under reduced pressure.
向流動有N2
之三口燒瓶加入PGMEA(45.38g)、中間物G-1F(19.7g、100.0mmol)、三乙胺(Tokyo Chemical Industry Co.,Ltd.製、15g、150.0mmol),並冷卻到0℃。混合PGMEA(45.38g)及Acryloyl Choride(丙烯醯氯)(14g、150.0mmol),並在上述燒瓶的內部溫度不超過10℃之溫度下經2小時滴加,並且在20℃下進行了4小時熟化。之後,冷卻到0℃。向另一三口燒瓶加入二異丙醚(435.5g)及己烷(186.6g),冷卻到0℃並進行了攪拌。在不超過5℃之溫度下經30分鐘向另一三口燒瓶的混合液滴加上述燒瓶中的反應液,並進行了1小時攪拌。之後,靜置1小時,進行了減壓過濾。藉由水洗所獲得之粉末,並進行減壓乾燥,從而合成了目標化合物G-1。
其他聚合物效仿上述合成例而進行了合成。PGMEA (45.38 g), intermediate G-1F (19.7 g, 100.0 mmol), and triethylamine (manufactured by Tokyo Chemical Industry Co., Ltd., 15 g, 150.0 mmol) were added to a three-necked flask with N 2 flowing, and cooled. To 0 ° C. PGMEA (45.38 g) and Acryloyl Choride (propylene gallium chloride) (14 g, 150.0 mmol) were mixed and added dropwise over a period of 2 hours at a temperature not exceeding 10 ° C inside the flask, and then performed at 20 ° C for 4 hours Mature. After that, it was cooled to 0 ° C. Diisopropyl ether (435.5 g) and hexane (186.6 g) were added to another three-necked flask, and the mixture was cooled to 0 ° C and stirred. The reaction liquid in the flask was added dropwise to the mixed liquid in another three-necked flask over a period of 30 minutes at a temperature not exceeding 5 ° C., and stirred for 1 hour. Then, it was left to stand for 1 hour, and filtered under reduced pressure. The obtained powder was washed with water and dried under reduced pressure to synthesize the target compound G-1.
Other polymers were synthesized following the above synthesis example.
<下層膜形成組成物的製備>
如下表1~4所示摻合各成分,利用孔徑0.1μm的聚四氟乙烯(PTFE)過濾器和孔徑0.003μm的UPE過濾器(超高分子量聚乙烯)實施兩個階段之過濾,製備出示於實施例及比較例之壓印用下層膜形成組成物。在表1~4內一併標記組合使用之壓印用硬化性組成物的序號。<Preparation of the Underlayer Film-forming Composition>
The components are blended as shown in Tables 1 to 4 below. Two stages of filtration are performed using a polytetrafluoroethylene (PTFE) filter with a pore size of 0.1 μm and a UPE filter (ultra high molecular weight polyethylene) with a pore size of 0.003 μm. The underlayer film-forming composition for imprint in Examples and Comparative Examples. In Tables 1 to 4, the serial numbers of the curable compositions for imprinting used in combination are marked together.
<在80℃下烘烤時的脫離成分的確認方法>
在矽晶圓(直徑8英吋)上旋塗壓印用下層膜形成組成物。之後,以80℃、3分鐘、空氣氛圍的烘烤條件下使用加熱板加熱而在晶圓上形成了下層膜。所獲得之下層膜的厚度約為10nm。將所獲得之下層膜在四氫呋喃(THF)中浸漬30分鐘,並利用LC/MS分析所獲得之THF溶液。
如此,確認了是否檢測出由式(r1)或(r2)或者由式(r1-1)表示且分子量為210以上的化合物。
在後述之聚合物的下方由虛線包圍之化合物為進行了脫離之化合物。關於聚合物H-1~H-3,未確認到分子量210以上的化合物的脫離。關於聚合物H-3,未確認到由式(r1)或(r2)表示之化合物或者由式(r1-1)表示之化合物的脫離。<How to check the detached components when baking at 80 ° C>
A silicon wafer (8 inches in diameter) is spin-coated with an underlayer film-forming composition for imprinting. After that, under a baking condition of 80 ° C. for 3 minutes in an air atmosphere, heating was performed using a hot plate to form an underlayer film on the wafer. The thickness of the obtained underlayer film was about 10 nm. The obtained lower film was immersed in tetrahydrofuran (THF) for 30 minutes, and the obtained THF solution was analyzed by LC / MS.
In this manner, it was confirmed whether a compound represented by the formula (r1) or (r2) or the formula (r1-1) and having a molecular weight of 210 or more was detected.
A compound surrounded by a dotted line below a polymer to be described later is a compound having been detached. Regarding the polymers H-1 to H-3, no detachment of the compound having a molecular weight of 210 or more was confirmed. Regarding the polymer H-3, no separation of the compound represented by the formula (r1) or (r2) or the compound represented by the formula (r1-1) was confirmed.
<壓印用硬化性組成物的製備>
混合表5所示之各化合物,進而作為聚合抑制劑將4-羥基-2,2,6,6-四甲基哌啶-1-氧基自由基(Tokyo Chemical Industry Co.,Ltd.製)以相對於示於表內之化合物中的聚合性化合物的總計量成為200質量ppm(0.02質量%)的方式加入來進行製備,從而獲得了壓印用硬化性組成物。對此利用孔徑0.1μm的聚四氟乙烯(PTFE)過濾器及孔徑0.003μm的UPE(超高分子量聚乙烯)過濾器實施兩個階段之過濾。<Preparation of hardening composition for imprinting>
Each compound shown in Table 5 was mixed, and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxy radical (manufactured by Tokyo Chemical Industry Co., Ltd.) was further used as a polymerization inhibitor. It added so that it might become 200 mass ppm (0.02 mass%) with respect to the total amount of the polymerizable compound among the compounds shown in the table, and it prepared, and obtained the curable composition for imprints. For this purpose, a two-stage filtration was performed using a polytetrafluoroethylene (PTFE) filter with a pore size of 0.1 μm and a UPE (ultra high molecular weight polyethylene) filter with a pore size of 0.003 μm.
<表面張力>
表面張力使用Kyowa Interface Science Co.,Ltd製、表面張力儀SURFACE TENS-IOMETER CBVP-A3,且利用玻璃板在23℃下進行了測量。單位由mN/m表示。每1水準製作2個試樣,且分別測量3次,並將總計6次的算數平均值採用為評價值。< Surface tension >
The surface tension was measured using a surface tension meter SURFACE TENS-IOMETER CBVP-A3 manufactured by Kyowa Interface Science Co., Ltd, and measured at 23 ° C using a glass plate. The unit is expressed in mN / m. Two samples were made for each level, and three measurements were made, and the arithmetic average of a total of six times was adopted as the evaluation value.
<漢森溶解度參數間距離(ΔHSP)的計算>
漢森溶解度參數利用HSP計算軟件HSPiP進行了計算。
以SMILES形式將各化合物的結構式輸入到上述軟件,藉此計算了漢森溶解度參數的各成分(d成分、p成分、h成分)。關於計算出之漢森溶解度參數,依據需要計算成分之間的漢森溶解度參數間距離(ΔHSP:ΔD、ΔP、ΔH)。
ΔHSP=(4.0×ΔD2
+ΔP2
+ΔH2
)0.5
……(H1)
在各計算對象成分中存在複數個化合物時(例如,脫離成分為2種以上時等)、漢森溶解度參數採用該化合物中最大量成分(質量基準)的值。再者,最大量成分為2種以上時,設為(基於混合比之平均值)。
表1~4中示出由式(H1)計算之脫離成分與硬化性組成物的漢森溶解度參數的距離(ΔHSP)。< Calculation of Hansen solubility parameter distance (ΔHSP) >
Hanson solubility parameters were calculated using HSP calculation software HSPiP.
The structural formula of each compound was input to the above software in the form of SMILES, whereby each component (d component, p component, h component) of the Hansen solubility parameter was calculated. Regarding the calculated Hansen solubility parameter, the distance between the Hansen solubility parameters (ΔHSP: ΔD, ΔP, ΔH) between the components is calculated as needed.
ΔHSP = (4.0 × ΔD 2 + ΔP 2 + ΔH 2 ) 0.5 …… (H1)
When there are a plurality of compounds in each calculation target component (for example, when there are two or more detached components, etc.), the value of the largest component (mass basis) in the compound is used as the Hansen solubility parameter. When the maximum amount component is two or more types, it is set to (average value based on the mixing ratio).
Tables 1 to 4 show the distance (ΔHSP) between the detached component and the Hansen solubility parameter of the hardening composition calculated from the formula (H1).
<分子量的測量方法>
聚合物的重量平均分子量(Mw)依據凝膠滲透色譜法(GPC測量)定義為聚苯乙烯換算值。裝置使用HLC-8220(TOSOH CORPORATION製),作為管柱使用了保護管柱HZ-L、TSKgel Super HZM-M、TSKgel Super HZ4000、TSKgel Super HZ3000及TSKgel Super HZ2000(TOSOH CORPORATION製)。溶析液使用了THF(四氫呋喃)。檢測使用了UV線(紫外線)的波長254nm檢測器。< Method of measuring molecular weight >
The weight average molecular weight (Mw) of a polymer is defined as a polystyrene conversion value according to gel permeation chromatography (GPC measurement). HLC-8220 (manufactured by TOSOH CORPORATION) was used for the apparatus, and protective column HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (manufactured by TOSOH CORPORATION) were used as the column. As the eluent, THF (tetrahydrofuran) was used. The detection uses a UV (ultraviolet) wavelength 254nm detector.
<密接性>
在矽晶圓(直徑8英吋)上旋塗了壓印用下層膜形成組成物。之後,在150℃、3分鐘、空氣氛圍的烘烤條件下使用加熱板加熱而在晶圓上形成了下層膜。所獲得之下層膜的厚度約為10nm。
在下層膜的表面上,利用FUJIFILM Dimatix公司製噴墨打印機DMP-2831,按每個噴嘴1pL的液滴量噴出調整為23℃溫度之壓印用硬化性組成物,在上述下層膜上以液滴成為約100μm間隔的方形陣列的方式進行了塗佈。
在其上以與壓印用硬化性組成物層相接的方式搭載石英鑄模(矩形線/間隔圖案(1/1)、線寬40nm、槽深度100nm、線邊緣粗糙度3.5nm),從石英晶圓側使用高壓汞燈並在300mJ/cm2
的條件下進行了曝光。曝光後、分離石英晶圓,測量了此時的剝離力。
該剝離力相當於密接力F(單位:N)。剝離力依照日本特開2011-206977號公報的0102~0107段中記載之比較例之剝離力的測量方法進行了測量。亦即,按照上述公報的圖5的剝離步驟1~6及16~18進行。
A:F≥45N
B:45N>F≥30N
C:30N>F≥20N
D:20N>F< Adhesiveness >
A silicon wafer (8 inches in diameter) was spin-coated with an underlayer film-forming composition for imprinting. Thereafter, under a baking condition of 150 ° C. for 3 minutes in an air atmosphere, heating was performed using a hot plate to form an underlayer film on the wafer. The thickness of the obtained underlayer film was about 10 nm.
On the surface of the lower film, an inkjet printer DMP-2831 manufactured by FUJIFILM Dimatix was used to eject a hardening composition for imprint adjusted to a temperature of 23 ° C. at a drop volume of 1 pL per nozzle, and the liquid was applied to the lower film. Coating was performed so that a square array with an interval of about 100 μm was dropped.
A quartz mold (a rectangular line / spacer pattern (1/1), a line width of 40 nm, a groove depth of 100 nm, and a line edge roughness of 3.5 nm) was mounted so as to contact the hardenable composition layer for imprinting. A high-pressure mercury lamp was used on the wafer side and exposed at 300 mJ / cm 2 . After the exposure, the quartz wafer was separated, and the peel force at this time was measured.
This peeling force corresponds to the adhesion force F (unit: N). The peeling force was measured according to the measuring method of the peeling force of the comparative example described in paragraphs 0102 to 0107 of Japanese Patent Application Laid-Open No. 2011-206977. That is, the peeling steps 1 to 6 and 16 to 18 of FIG. 5 in the aforementioned publication are performed.
A: F≥45N
B: 45N > F≥30N
C: 30N > F≥20N
D: 20N > F
<潤濕性的評價>
矽晶圓(直徑8英吋)上旋塗了壓印用下層膜形成組成物。之後,以150℃、3分鐘、空氣氛圍的烘烤條件下利用加熱板加熱而在密接層上形成了下層膜。所獲得之下層膜的厚度約為10nm。
在下層膜的表面上,利用FUJIFILM Dimatix公司製噴墨打印機DMP-2831,按每個噴嘴1pL的液滴量噴出調整為23℃溫度之壓印用硬化性組成物,在上述下層膜上以液滴成為約100μm間隔的方形陣列的方式進行塗佈。
塗佈後、拍攝3秒後的液滴形狀,並測量了液滴直徑。每1水準使用了2個試樣,且分別測量了3次。並將總計6次的算術平均值採用為評價值。將結果示於表1~4。
A:IJ液滴的平均直徑>500μm
B:400μm<IJ液滴的平均直徑≤500μm
C:320μm<IJ液滴的平均直徑≤400μm
D:IJ液滴的平均直徑≤320μm< Evaluation of wettability >
A silicon wafer (8 inches in diameter) was spin-coated with an underlayer film-forming composition for imprinting. After that, under a baking condition of 150 ° C. for 3 minutes in an air atmosphere, the lower layer film was formed on the adhesion layer by heating with a hot plate. The thickness of the obtained underlayer film was about 10 nm.
On the surface of the lower film, an inkjet printer DMP-2831 manufactured by FUJIFILM Dimatix was used to eject a hardening composition for imprint adjusted to a temperature of 23 ° C. at a drop volume of 1 pL per nozzle, and the liquid was applied to the lower film. Coating was performed so as to form a square array with an interval of about 100 μm.
After coating, the shape of the droplet was photographed 3 seconds later, and the diameter of the droplet was measured. Two samples were used for each level, and three measurements were taken. The arithmetic average of 6 times in total was adopted as the evaluation value. The results are shown in Tables 1 to 4.
A: The average diameter of IJ droplets is> 500 μm
B: 400 μm <IJ average diameter of droplets ≤ 500 μm
C: 320μm <IJ average diameter of droplets ≤400μm
D: average diameter of IJ droplets ≤320μm
[表1]
[表2]
[表3]
[表4]
[Table 2]
[table 3]
[Table 4]
聚合物
[化學式21]
虛線記載脫離後的脫離成分(以下相同)
Molecular Weight係指分子量。
[化學式22]
[化學式23]
[化學式24]
[化學式25]
[化學式26]
[化學式27]
[化學式28]
[化學式29]
polymer
[Chemical Formula 21]
The dotted line indicates the detached component (the same applies hereinafter).
Molecular Weight refers to molecular weight.
[Chemical Formula 22]
[Chemical Formula 23]
[Chemical Formula 24]
[Chemical Formula 25]
[Chemical Formula 26]
[Chemical Formula 27]
[Chemical Formula 28]
[Chemical Formula 29]
脫離反應促進劑或其前驅物
T-1、T-4、T-5、T-6及T-7為光酸產生劑。T-2為熱鹼產生劑。T-3為熱酸產生劑。
[化學式30]
Release reaction promoter or its precursor
T-1, T-4, T-5, T-6 and T-7 are photoacid generators. T-2 is a hot alkali generator. T-3 is a thermal acid generator.
[Chemical Formula 30]
光聚合起始劑
[化學式31]
Photopolymerization initiator
[Chemical Formula 31]
[表5] [table 5]
從上述結果明確可知,本發明的壓印用下層膜形成組成物含有脫離特定脫離成分之聚合物,與壓印用硬化性組成物組合而使用時,顯示優異之潤濕性和良好的密接性(實施例1~21)。另一方面,可知脫離成分未進行脫離或者即使脫離成分進行了脫離但亦無法取特定化學結構者,其潤濕性或密接性差(比較例1~3)。It is clear from the above results that the underlayer film-forming composition for imprints of the present invention contains a polymer that releases a specific release component and, when used in combination with a hardenable composition for imprints, exhibits excellent wettability and good adhesion. (Examples 1 to 21). On the other hand, it was found that those who did not detach the detached component or could not take a specific chemical structure even if the detached component detached, the wettability or adhesion was poor (Comparative Examples 1 to 3).
對在各實施例製作之壓印用硬化性組成物的膜,接觸實施了寬度500nm的圖案之石英製鑄模。之後,從鑄模側照射紫外線而將膜硬化。接著,分離鑄模,而獲得轉印有鑄模的圖案之硬化物的圖案。其結果,確認到了在任意硬化物中均能夠形成良好的圖案。The film of the curable composition for imprint produced in each Example was brought into contact with a quartz mold having a pattern having a width of 500 nm. Thereafter, the film was cured by irradiating ultraviolet rays from the mold side. Next, the mold is separated to obtain a pattern of a cured product to which the pattern of the mold is transferred. As a result, it was confirmed that a good pattern can be formed in any hardened material.
1‧‧‧基板1‧‧‧ substrate
2‧‧‧下層膜 2‧‧‧ lower film
3‧‧‧壓印用硬化性組成物 3‧‧‧curable composition for imprinting
4‧‧‧鑄模 4‧‧‧ mold
21‧‧‧下層膜 21‧‧‧ under film
22‧‧‧壓印用硬化性組成物 22‧‧‧ Curable composition for embossing
22a、22b、22c‧‧‧膜狀的壓印用硬化性組成物 22a, 22b, 22c ‧‧‧ film-like hardening composition for embossing
23‧‧‧沒有膜的區域 23‧‧‧ Area without film
圖1係表示硬化物圖案的形成及將所獲得之硬化物圖案用於基於蝕刻之基板的加工時的製造步驟的一例之製程說明圖。FIG. 1 is a manufacturing process explanatory drawing showing an example of the formation of a cured product pattern and an example of manufacturing steps when the obtained cured product pattern is used for processing by an etching substrate.
圖2係示意地表示藉由噴墨法在潤濕性低的下層膜的表面塗佈壓印用硬化性組成物時的、壓印用硬化性組成物的潤濕擴展狀態之俯視圖。 FIG. 2 is a plan view schematically showing the wet spreading state of the hardening composition for imprinting when the hardening composition for imprinting is applied to the surface of an underlayer film having low wettability by an inkjet method.
Claims (27)
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| KR102867285B1 (en) * | 2019-12-18 | 2025-10-01 | 닛산 가가쿠 가부시키가이샤 | Composition for forming a resist underlayer film for nanoimprinting |
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| US8557351B2 (en) * | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
| US8808808B2 (en) * | 2005-07-22 | 2014-08-19 | Molecular Imprints, Inc. | Method for imprint lithography utilizing an adhesion primer layer |
| US7872059B2 (en) * | 2007-02-14 | 2011-01-18 | Fujifilm Corporation | Composition for use in laser decomposition and pattern-forming material using the same |
| JP2011202109A (en) * | 2010-03-26 | 2011-10-13 | Fujifilm Corp | Composition for forming plating layer, surface metal film material, method for producing the same, metal pattern material, and method for producing the same |
| JP5899145B2 (en) * | 2012-06-18 | 2016-04-06 | 富士フイルム株式会社 | Composition for forming underlayer film for imprint and pattern forming method |
| JP6029506B2 (en) * | 2013-03-26 | 2016-11-24 | 富士フイルム株式会社 | Composition for forming underlayer film for imprint and pattern forming method |
| KR102126255B1 (en) * | 2013-03-29 | 2020-06-24 | 제이에스알 가부시끼가이샤 | Composition, method for producing substrate having pattern formed thereon, film and method for producing same, and compound |
| WO2014208542A1 (en) * | 2013-06-26 | 2014-12-31 | 日産化学工業株式会社 | Resist underlayer film forming composition containing substituted crosslinkable compound |
| WO2016043004A1 (en) * | 2014-09-17 | 2016-03-24 | 富士フイルム株式会社 | Pattern forming method, patterned film, method for manufacturing electronic device, electronic device, block copolymer and patterning material |
| JP6297992B2 (en) * | 2015-02-05 | 2018-03-20 | 信越化学工業株式会社 | Silicon-containing polymer, silicon-containing compound, resist underlayer film forming composition, and pattern forming method |
| JPWO2016148095A1 (en) * | 2015-03-18 | 2018-03-22 | 富士フイルム株式会社 | Underlayer film forming resin composition, imprint forming kit, laminate, pattern forming method, and device manufacturing method |
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| JP2017039809A (en) * | 2015-08-18 | 2017-02-23 | 富士フイルム株式会社 | Curable composition, pattern formation method and method of manufacturing device |
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