TW201936732A - Heat-curable resin film and sheet for forming first protective film - Google Patents
Heat-curable resin film and sheet for forming first protective film Download PDFInfo
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Abstract
本發明提供一種熱硬化性樹脂膜12,其為貼附在半導體晶圓的具有凸塊的表面,藉由使其熱硬化,用以在上述表面形成第一保護膜的熱硬化性樹脂膜12,當熱硬化前的熱硬化性樹脂膜12以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值為500Pa‧s以上。另提供一種第一保護膜形成用片材1,其具備第一支撐片材101,在第一支撐片材101的一側的表面101a上,具備熱硬化性樹脂膜12。The present invention provides a thermosetting resin film 12, which is a thermosetting resin film 12 attached to a surface of a semiconductor wafer having bumps and used for thermosetting to form a first protective film on the surface When the thermosetting resin film 12 before thermosetting is heated at 10°C/min, the minimum shear viscosity at 90°C to 130°C is 500 Pa‧s or more. Also provided is a sheet 1 for forming a first protective film, which includes a first support sheet 101 and a thermosetting resin film 12 on a surface 101 a of the first support sheet 101.
Description
本發明是關於一種用以貼附在半導體晶圓的具有凸塊的表面,藉由使其熱硬化,在上述表面形成第一保護膜的熱硬化性樹脂膜,以及具備上述熱硬化性樹脂膜的第一保護膜形成用片材。
本申請案主張2017年11月17日於日本提出申請的日本特願2017-221986號為基礎的優先權,其內容援用於此。The present invention relates to a thermosetting resin film for attaching to a surface of a semiconductor wafer having bumps, by thermosetting it, and forming a first protective film on the surface, and a thermosetting resin film provided with the thermosetting resin film Sheet for forming the first protective film.
This application claims priority based on Japanese Patent Application No. 2017-221986 filed in Japan on November 17, 2017, and the contents are used here.
一直以來,當將MPU、閘極陣列等中所使用的多針腳的LSI封裝安裝於印刷配線基板時,可採用覆晶安裝方法,其使用於其連接墊部位形成有由共晶焊料、高溫焊料、金等而成的凸狀電極(以下,於本說明書中稱為「凸塊」)者作為半導體晶片,藉由所謂的倒裝(face down)方式,使此等凸塊與晶片搭載用基板上的相對應的端子部面對面、接觸、熔融/擴散接合。Conventionally, when mounting a multi-pin LSI package used in MPUs, gate arrays, etc. on a printed wiring board, a flip-chip mounting method can be used, which is formed on the connection pad part by a eutectic solder, high temperature solder Bumps made of gold, gold, etc. (hereinafter, referred to as "bumps" in this specification) are used as semiconductor wafers, and these bumps and wafer mounting substrates are made by a so-called face down method The corresponding terminal parts on the face-to-face, contact, fusion/diffusion bonding.
此安裝方法所使用的半導體晶片,可藉由,例如,將在迴路面形成有凸塊的半導體晶圓的與迴路面(換言之,凸塊形成面)相反側的面進行研削、切割使其個片化而獲得。在獲得此類半導體晶片的過程中,通常,以保護半導體晶圓的凸塊形成面及凸塊為目的,將硬化性樹脂膜貼附在凸塊形成面,使此膜硬化,藉此在凸塊形成面形成保護膜(在本說明書中,以下,稱為「第一保護膜」)。The semiconductor chip used in this mounting method can be ground, cut, etc. by, for example, the surface of the semiconductor wafer with bumps formed on the circuit surface opposite to the circuit surface (in other words, the bump forming surface) Obtained by slice. In the process of obtaining such a semiconductor wafer, generally, for the purpose of protecting the bump forming surface and the bump of the semiconductor wafer, a curable resin film is attached to the bump forming surface to harden the film, thereby A protective film is formed on the block forming surface (hereinafter, referred to as "first protective film" in this specification).
硬化性樹脂膜通常是在藉由加熱而軟化的狀態下,貼附在半導體晶圓的凸塊形成面。如此一來,包含凸塊的頭頂部的上部會貫穿硬化性樹脂膜,從硬化性樹脂膜突出。另一方面,硬化性樹脂膜以覆蓋半導體晶圓的凸塊的方式於凸塊之間擴展,與凸塊形成面密著的同時,覆蓋凸塊的表面,特別是凸塊形成面的附近部位的表面,而將凸塊包埋。之後,硬化性樹脂膜藉由進一步硬化,覆蓋半導體晶圓的凸塊形成面、以及凸塊的凸塊形成面的附近部位的表面,成為保護此等區域的的保護膜。再者,將半導體晶圓固片化為半導體晶片,最終成為在凸塊形成面具備保護膜的半導體晶片(在本說明書中,稱為「附保護膜的半導體晶片」)。The curable resin film is usually attached to the bump forming surface of the semiconductor wafer in a state of being softened by heating. In this way, the upper portion of the top of the head including the bumps penetrates the curable resin film and protrudes from the curable resin film. On the other hand, the curable resin film spreads between the bumps so as to cover the bumps of the semiconductor wafer, while being close to the bump forming surface, it covers the surface of the bump, especially in the vicinity of the bump forming surface The surface is embedded in the bumps. After that, the curable resin film is further hardened to cover the bump forming surface of the semiconductor wafer and the surface of the vicinity of the bump forming surface of the bump to become a protective film for protecting these areas. Furthermore, the semiconductor wafer is solidified into a semiconductor wafer, and finally becomes a semiconductor wafer provided with a protective film on the bump forming surface (in this specification, it is referred to as a "semiconductor wafer with protective film").
此類附保護膜的半導體晶片是搭載於基板上成為半導體封裝,進一步使用此等半導體封裝,構成作為目的之半導體裝置。為了使半導體封裝及半導體裝置正常地作用,必須使附保護膜的半導體晶片的凸塊與基板上的迴路的電性連接不受到阻礙。然而,硬化性樹脂膜若無法對半導體晶圓的凸塊形成面適當地貼附,則凸塊之從硬化性樹脂膜的突出變得不足,造成在凸塊的頭頂部殘留有硬化性樹脂膜的一部分。此等殘留在凸塊的頭頂部的硬化性樹脂膜,若與其他區域的硬化性樹脂膜同樣地進行硬化,便成為具有與保護膜同樣組成的硬化物(在本說明書中,稱為「保護膜殘留物」)。如此一來,由於凸塊的頭頂部是凸塊與基板上的迴路的電性連接區域,若保護膜殘留物的量較多時,將導致附保護膜的半導體晶片的凸塊與基板上的迴路的電性連接受到阻礙。
亦即,在搭載至附保護膜的半導體晶片的基板上之前的階段,在附保護膜的半導體晶片的凸塊的頭頂部,要求沒有保護膜殘留物存在,抑或是保護膜殘留物的量盡量少。Such a semiconductor wafer with a protective film is mounted on a substrate to become a semiconductor package, and these semiconductor packages are further used to constitute a target semiconductor device. In order for the semiconductor package and the semiconductor device to function properly, the electrical connection between the bumps of the semiconductor wafer with the protective film and the circuits on the substrate must not be hindered. However, if the curable resin film cannot be properly attached to the bump forming surface of the semiconductor wafer, the protrusion of the bump from the curable resin film becomes insufficient, resulting in a curable resin film remaining on the top of the bump a part of. These curable resin films that remain on the top of the bumps are cured in the same way as the curable resin films in other areas, and become a cured product with the same composition as the protective film (in this specification, it is called "protection" Membrane residue"). In this way, because the top of the bump is the electrical connection area between the bump and the circuit on the substrate, if the amount of the protective film residue is large, it will cause the bump of the semiconductor wafer with the protective film and the substrate The electrical connection of the loop is hindered.
That is, in the stage before mounting on the substrate of the semiconductor wafer with a protective film, it is required that no residue of the protective film exists or the amount of the residue of the protective film is as much as possible on the top of the bump of the semiconductor wafer with the protective film less.
如上所述,作為能夠在凸塊上部不會有硬化性樹脂膜的殘留而形成保護膜的保護膜形成用片材,揭示一種在片材的對半導體晶圓的貼附溫度下,硬化性樹脂膜的貯藏剪切模數與緩衝層的貯藏剪切模數的彈性比率限制在特定範圍者(參照專利文獻1)。
[先前技術文獻]
[專利文獻]As described above, as a protective film forming sheet capable of forming a protective film without leaving a curable resin film on the upper part of a bump, a curable resin is disclosed at a temperature at which the sheet is attached to a semiconductor wafer The elastic ratio of the storage shear modulus of the film to the storage shear modulus of the buffer layer is limited to a specific range (see Patent Document 1).
[Prior Technical Literature]
[Patent Literature]
專利文獻1:日本特開2015-206006號公報Patent Literature 1: Japanese Patent Laid-Open No. 2015-206006
[發明欲解決的問題][Problems to be solved by the invention]
專利文獻1中揭示的保護膜形成用片材,皆是限制當此等片材貼附至半導體晶圓時,在此溫度的硬化性樹脂膜的物性者。The sheets for forming a protective film disclosed in Patent Document 1 limit the physical properties of the curable resin film at this temperature when these sheets are attached to a semiconductor wafer.
但是,使熱硬化型的硬化性樹脂膜熱硬化,於半導體晶圓的具有凸塊的表面形成保護膜時,暫時性地熔融、液化造成收縮(cissing)產生,而造成保護膜形成不良。However, when a thermosetting curable resin film is thermally cured and a protective film is formed on the bumped surface of the semiconductor wafer, it temporarily melts and liquefies to cause cissing, which may result in poor protective film formation.
因此,本發明的目的是提供一種熱硬化性樹脂膜,其為貼附在半導體晶圓的具有凸塊的表面,藉由使其熱硬化,用以在上述表面形成第一保護膜的熱硬化性樹脂膜,當將熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,可抑制半導體晶圓的表面的收縮。又,本發明的目的是提供一種具備此種熱硬化性樹脂膜的第一保護膜形成用片材。
[解決問題的手段]Therefore, an object of the present invention is to provide a thermosetting resin film, which is a thermally hardened resin film attached to a surface of a semiconductor wafer having bumps and used to form a first protective film on the surface When the thermosetting resin film is attached to the bumped surface of the semiconductor wafer and thermoset, the shrinkage of the surface of the semiconductor wafer can be suppressed. In addition, an object of the present invention is to provide a sheet for forming a first protective film provided with such a thermosetting resin film.
[Means for solving the problem]
為了解決上述課題,本發明提供一種熱硬化性樹脂膜,其為貼附在半導體晶圓的具有凸塊的表面,藉由使其熱硬化,用以在上述表面形成第一保護膜的熱硬化性樹脂膜,當熱硬化前的上述熱硬化性樹脂膜以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值為500Pa‧s以上。In order to solve the above-mentioned problems, the present invention provides a thermosetting resin film that is attached to a surface of a semiconductor wafer having bumps and is thermoset to form a first protective film on the surface by thermosetting When the above-mentioned thermosetting resin film before thermosetting is heated at 10 °C/min, the minimum value of the shear viscosity at 90 °C ~ 130 °C is 500 Pa‧s or more.
本發明的熱硬化性樹脂膜,以含有聚合物成分(A)及熱硬化性成分(B)為佳。
本發明的熱硬化性樹脂膜以含有聚乙烯縮醛為佳。The thermosetting resin film of the present invention preferably contains a polymer component (A) and a thermosetting component (B).
The thermosetting resin film of the present invention preferably contains polyvinyl acetal.
此外,本發明提供一種第一保護膜形成用片材,其在第一支撐片材的一側的表面上,具備申請專利範圍第1項所記載的熱硬化性樹脂膜。
[發明效果]In addition, the present invention provides a sheet for forming a first protective film, which includes a thermosetting resin film described in item 1 of the patent application scope on the surface of one side of the first support sheet.
[Effect of the invention]
根據本發明,提供一種熱硬化性樹脂膜,其為貼附在半導體晶圓的具有凸塊的表面,藉由使其熱硬化,用以在上述表面形成第一保護膜的熱硬化性樹脂膜,當將上述熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,可抑制半導體晶圓的表面的收縮。又,本發明提供一種具備此種熱硬化性樹脂膜的第一保護膜形成用片材。According to the present invention, there is provided a thermosetting resin film, which is a thermosetting resin film attached to a surface of a semiconductor wafer having bumps, and by thermosetting it, a first protective film is formed on the surface When the thermosetting resin film is attached to the bumped surface of the semiconductor wafer to thermally cure it, shrinkage of the surface of the semiconductor wafer can be suppressed. In addition, the present invention provides a sheet for forming a first protective film provided with such a thermosetting resin film.
在本說明書中,所謂「半導體晶圓的表面的收縮(cissing)」,是指熱硬化性樹脂膜在熱硬化時,暫時性地熔融、液化而露出半導體晶圓的表面。
此外,在本說明書中,所謂「半導體晶圓的表面」,是指從具有凸塊的半導體晶圓的表面,扣除凸塊表面的區域。In this specification, "cissing of the surface of the semiconductor wafer" means that the thermosetting resin film is temporarily melted and liquefied to expose the surface of the semiconductor wafer during thermosetting.
In addition, in this specification, the "surface of the semiconductor wafer" refers to the area where the bump surface is subtracted from the surface of the semiconductor wafer having bumps.
圖1是例示本發明的熱硬化性樹脂膜及第一保護膜形成用片材的一實施形態的剖面圖。且,以下說明中使用的圖,為了易於理解本發明的特徵,出於便利,有時會放大作為主要部位的部分,各構成元件的尺寸比率等未必與實際相同。1 is a cross-sectional view illustrating an embodiment of a sheet for forming a thermosetting resin film and a first protective film of the present invention. In addition, in the drawings used in the following description, in order to easily understand the characteristics of the present invention, for convenience, the main part may be enlarged, and the dimensional ratio of each constituent element and the like may not necessarily be the same as the actual.
圖1所示的第一保護膜形成用片材1具備第一支撐片材101,在第一支撐片材101的一側的表面101a上,具備熱硬化性樹脂膜12。更具體而言,第一保護膜形成用片材1是在第一基材11上具備緩衝層13,在緩衝層13上具備熱硬化性樹脂膜12,第一基材11及緩衝層13構成第一支撐片材101。The first protective film forming sheet 1 shown in FIG. 1 includes a first support sheet 101, and a thermosetting resin film 12 is provided on a surface 101 a of the first support sheet 101. More specifically, the first protective film forming sheet 1 includes a buffer layer 13 on the first substrate 11, a thermosetting resin film 12 on the buffer layer 13, and the first substrate 11 and the buffer layer 13 The first support sheet 101.
本發明的第一保護膜形成用片材並不限於圖1所示者,在無損本發明效果的範圍內,以圖1所示者而言,亦可將一部分的構成加以變更、刪減或增加。
例如,本發明的第一保護膜形成用片材,亦可在與基材相反側的最表層(以圖1所示的第一保護膜形成用片材而言,是熱硬化性樹脂膜12)具備剝離膜。
接著,針對構成本發明的第一保護膜形成用片材的各層加以說明。The sheet for forming the first protective film of the present invention is not limited to the one shown in FIG. 1, and as long as the effect of the present invention is not impaired, as shown in FIG. 1, a part of the configuration may be changed, deleted, or increase.
For example, the sheet for forming the first protective film of the present invention may be the outermost layer on the side opposite to the substrate (in the case of the sheet for forming the first protective film shown in FIG. 1, it is the thermosetting resin film 12 ) With release film.
Next, each layer constituting the sheet for forming the first protective film of the present invention will be described.
◎熱硬化性樹脂膜
熱硬化性樹脂膜,是用以保護半導體晶圓的凸塊形成面(換言之,迴路面)、及設置在此凸塊形成面上的凸塊者。◎Thermosetting resin film The thermosetting resin film is used to protect the bump forming surface (in other words, the circuit surface) of the semiconductor wafer and the bumps provided on the bump forming surface.
本發明的熱硬化性樹脂膜,與一般的樹脂膜相同,是藉由加熱而軟化,但藉由更進一步加熱而熱硬化者,具有相較於熱硬化前的常溫的熱硬化性樹脂膜,在熱硬化後回復到常溫時變硬的性質。如此一來,形成在具有凸塊的表面的第一保護膜具有作為保護膜的功能。然後,由於熱硬化前的上述熱硬化性樹脂膜以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值為500Pa‧s以上,貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,不會熔融、液化,可防止收縮所引起的保護膜形成不良。
且,在本說明書中,所謂「常溫」,是指不特別冷、不特別熱的溫度,亦即平常的溫度,可列舉,例如,15~25℃的溫度等。The thermosetting resin film of the present invention, like the general resin film, is softened by heating, but the thermosetting resin film by further heating has a thermosetting resin film at room temperature compared to the normal temperature before thermosetting, The property of hardening when returning to normal temperature after heat hardening. In this way, the first protective film formed on the surface having the bump has a function as a protective film. Then, when the temperature of the thermosetting resin film before thermosetting is increased at 10°C/min, the minimum value of the shear viscosity at 90°C to 130°C is 500 Pa‧s or more, which is attached to the semiconductor wafer The surface with bumps does not melt or liquefy when it is thermally hardened, and prevents the formation of a protective film caused by shrinkage.
In addition, in this specification, the "normal temperature" refers to a temperature that is not particularly cold or particularly hot, that is, an ordinary temperature, and examples thereof include, for example, a temperature of 15 to 25°C.
本說明書中的「剪切黏度」,是使用剪切黏度測定裝置,使測定治具與在直徑25mm、厚度500μm圓柱形上的樣品的朝上的面接觸,以頻率1Hz、升溫速度10℃/min的測定條件,由室溫起至150℃為止,在每1秒所測定的值。
且,本說明書中的「室溫」,是指室內的一般溫度,可列舉,例如,5℃~30℃的溫度。The "shear viscosity" in this manual refers to the use of a shear viscosity measuring device to bring the measuring jig into contact with the upward facing surface of a sample on a cylinder with a diameter of 25 mm and a thickness of 500 μm at a frequency of 1 Hz and a heating rate of 10 °C/ The measurement condition of min is the value measured every 1 second from room temperature to 150°C.
In addition, the "room temperature" in this specification refers to a general temperature in a room, and may include, for example, a temperature of 5°C to 30°C.
用以在半導體晶圓的具有凸塊的表面形成第一保護膜的熱硬化性樹脂膜,為了抑制在凸塊的上述上部(凸塊的頂部及其附近區域)的熱硬化性樹脂膜的殘留,通常是將加熱時的剪切黏度設定為特定值以下,而提升流動性。然而,當加熱硬化時的熱硬化性樹脂膜的剪切黏度小的時候,由於加熱而變成液狀,導致在凸塊附近凝集,容易發生第一保護膜的收縮不良。由於熱硬化系樹脂膜成為最低剪切黏度的溫度會依據其組成而不同,若在硬化溫度(加熱設定溫度)成為最低剪切黏度,則在比其更低的溫度也可能會成為最低剪切黏度。由於在熱硬化性樹脂膜進行加熱硬化時,當剪切黏度未達500Pa‧s時容易發生收縮,故要求在加熱硬化溫度區域(加熱開始溫度~加熱目標溫度)時的剪切黏度的最小值為500Pa‧s以上。The thermosetting resin film for forming the first protective film on the surface of the semiconductor wafer with bumps, in order to suppress the remaining of the thermosetting resin film on the upper part of the bumps (the top of the bumps and the vicinity thereof) Usually, the shear viscosity during heating is set below a certain value to improve the fluidity. However, when the shear viscosity of the thermosetting resin film at the time of heat curing is small, it becomes liquid due to heating, causing agglomeration near the bumps, and the shrinkage failure of the first protective film is likely to occur. Since the temperature at which the thermosetting resin film becomes the lowest shear viscosity will vary depending on its composition, if it becomes the lowest shear viscosity at the curing temperature (heating setting temperature), it may become the lowest shear at a lower temperature. Viscosity. When the thermosetting resin film is heat-cured, shrinkage is likely to occur when the shear viscosity is less than 500 Pa‧s, so the minimum value of the shear viscosity in the heat-hardening temperature range (heating start temperature to heating target temperature) is required Above 500Pa‧s.
因此,熱硬化前的上述熱硬化性樹脂膜以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值必須為500Pa‧s以上,以1000Pa‧s以上為佳,以2000Pa‧s以上為更佳,以104 Pa‧s以上為進一步更佳,以2×104 Pa‧s以上為特佳。Therefore, when the above thermosetting resin film before thermosetting is heated at 10°C/min, the minimum shear viscosity at 90°C to 130°C must be 500 Pa‧s or more, preferably 1000 Pa‧s or more , More preferably 2000Pa‧s or more, 10 4 Pa‧s or more, and 2×10 4 Pa‧s or more.
熱硬化前的上述熱硬化性樹脂膜以10℃/min使其升溫時,在90℃~130℃時的剪切黏度最小值,為了抑制當熱硬化性樹脂膜貼附於半導體晶圓的具有凸塊的表面時,在凸塊的上述上部的熱硬化性樹脂膜的殘留,以106 Pa‧s以下為佳,以105 Pa‧s以下為更佳,以6×104 Pa‧s以下為特佳。When the above thermosetting resin film before thermosetting is heated at 10 °C/min, the minimum shear viscosity at 90 °C ~ 130 °C, in order to suppress the thermosetting resin film attached to the semiconductor wafer has On the surface of the bump, the residual of the thermosetting resin film on the upper part of the bump is preferably 10 6 Pa‧s or less, more preferably 10 5 Pa‧s or less, 6×10 4 Pa‧s The following are best.
熱硬化前的上述熱硬化性樹脂膜以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值以500~106 Pa‧s為佳,以1000~105 Pa‧s為更佳,以2000~105 Pa‧s以下為進一步更佳,以104 ~105 Pa‧s為特佳,以2×104 ~6×104 Pa‧s為最佳。When the above-mentioned thermosetting resin film before thermosetting is heated at 10°C/min, the minimum value of the shear viscosity at 90°C to 130°C is preferably 500 to 10 6 Pa‧s, and preferably 1000 to 10 5 Pa‧s is better, 2000 to 10 5 Pa‧s or less is even better, 10 4 to 10 5 Pa‧s is particularly good, and 2×10 4 to 6×10 4 Pa‧s is the best .
熱硬化性樹脂膜為片材狀或膜狀,只要滿足上述條件的關係,其構成材料並無特別限定。The thermosetting resin film is in the form of a sheet or a film, and as long as the above-mentioned conditions are satisfied, its constituent material is not particularly limited.
熱硬化性樹脂膜以含有樹脂成分及填充材者為佳,以含有樹脂成分,而填充材的含量相對於熱硬化性樹脂膜的總質量,為45質量%以下者為更佳,以5~45質量%者為進一步更佳。
此外,熱硬化性樹脂膜中,上述樹脂成分的重量平均分子量以1000000以下為佳,例如,可以是800000以下、500000以下、300000以下、200000以下、100000以下及50000以下等的任一者。
另一方面,熱硬化樹脂膜中,上述樹脂成分的重量平均分子量的下限值雖然無特別限定,但可以是,例如,1000以上、5000以上及8000以上的任一者。
此外,熱硬化性樹脂膜中,上述樹脂成分的重量平均分子量,例如,以1000~1000000、5000~800000、8000~500000、8000~300000、8000~200000、8000~100000、8000~50000、8000~30000等的任一者為佳。
藉由上述樹脂成分滿足此等的各條件,抑制第一保護膜形成用片材在凸塊上部的熱硬化性樹脂膜的殘留的效果變得更加提高。
且,在本說明書中,重量平均分子量若無特別說明,則是指藉由凝膠滲透層析法(gel permeation chromatography,GPC)所測定的聚苯乙烯換算值。The thermosetting resin film preferably contains a resin component and a filler, and preferably contains a resin component, and the content of the filler relative to the total mass of the thermosetting resin film is preferably 45% by mass or less, preferably 5 to 45% by mass is even better.
In addition, in the thermosetting resin film, the weight average molecular weight of the resin component is preferably 1,000,000 or less, and may be, for example, any one of 800,000 or less, 500,000 or less, 300,000 or less, 200,000 or less, 100,000 or less, and 50,000 or less.
On the other hand, in the thermosetting resin film, the lower limit of the weight average molecular weight of the resin component is not particularly limited, but may be, for example, any one of 1,000 or more, 5000 or more, and 8000 or more.
In addition, in the thermosetting resin film, the weight average molecular weight of the resin component is, for example, 1000 to 1000000, 5000 to 800000, 8000 to 500,000, 8000 to 300000, 8000 to 200000, 8000 to 100000, 8000 to 50000, 8000 to Any one of 30,000 or the like is preferable.
When the above-mentioned resin component satisfies these conditions, the effect of suppressing the remaining of the thermosetting resin film on the upper portion of the bump of the first protective film forming sheet is further improved.
In addition, in this specification, unless otherwise specified, the weight average molecular weight means a polystyrene conversion value measured by gel permeation chromatography (GPC).
熱硬化性樹脂膜,特佳為含有樹脂成分,而填充材的含量相對於熱硬化性樹脂膜的總質量,為45質量%以下,且,上述樹脂成分的重量平均分子量為30000以下者;最佳為填充材的含量相對於熱硬化性樹脂膜的總質量,為5~45質量%,且,上述樹脂成分的重量平均分子量為8000~30000者。藉由滿足此等條件,抑制第一保護膜形成用片材在凸塊上部的熱硬化性樹脂膜的殘留的效果變得更加提高。
上述樹脂成分及填充材的種類並無特別限定。The thermosetting resin film preferably contains a resin component, and the content of the filler is 45% by mass or less relative to the total mass of the thermosetting resin film, and the weight average molecular weight of the resin component is 30,000 or less; Preferably, the content of the filler is 5 to 45% by mass relative to the total mass of the thermosetting resin film, and the weight average molecular weight of the resin component is 8000 to 30,000. By satisfying these conditions, the effect of suppressing the remaining of the thermosetting resin film on the bump upper portion of the first protective film forming sheet becomes more enhanced.
The types of the resin components and fillers are not particularly limited.
熱硬化性樹脂膜,可以使用含有其構成材料的熱硬化性樹脂膜形成用組合物而形成。The thermosetting resin film can be formed using a composition for forming a thermosetting resin film containing its constituent material.
作為較佳的熱硬化性樹脂膜,可列舉,例如,含有聚合物成分(A)作為上述樹脂成分,進一步含有熱硬化性成分(B)者。As a preferable thermosetting resin film, for example, those containing a polymer component (A) as the above-mentioned resin component and further containing a thermosetting component (B).
熱硬化性樹脂膜可僅為1層(單層),亦可為2層以上的複數層。熱硬化性樹脂膜為複數層的情況時,此等複數層可彼此相同亦可相異,此等複數層的組合並無特別限定。The thermosetting resin film may be only one layer (single layer) or plural layers of more than two layers. When the thermosetting resin film is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.
熱硬化性樹脂膜的厚度,以1~100μm為佳,以5~75μm為更佳,以5~50μm為特佳。藉由熱硬化性樹脂膜的厚度為上述下限值以上,可形成保護能更高的第一保護膜。此外,藉由熱硬化性樹脂膜的厚度為上述上限值以下,可抑制成為過剩的厚度。
在此,所謂「熱硬化性樹脂膜的厚度」,是指熱硬化性樹脂膜全體的厚度,例如,由複數層而形成的熱硬化性樹脂膜的厚度,是指構成熱硬化性樹脂膜的全部的層的合計的厚度。
且,作為熱硬化性樹脂膜的厚度的測定方法,可列舉,例如,在任意的5處,使用接觸式測厚計,測定熱硬化性樹脂膜的厚度,計算出測定值的平均的方法等。以下,本說明書中之「厚度」的測定方法可列舉同樣的方法。The thickness of the thermosetting resin film is preferably from 1 to 100 μm, more preferably from 5 to 75 μm, and particularly preferably from 5 to 50 μm. When the thickness of the thermosetting resin film is equal to or greater than the above lower limit, a first protective film with higher protective energy can be formed. In addition, when the thickness of the thermosetting resin film is equal to or less than the above upper limit value, the excessive thickness can be suppressed.
Here, the "thickness of the thermosetting resin film" refers to the thickness of the entire thermosetting resin film, for example, the thickness of the thermosetting resin film formed by a plurality of layers refers to the constituent of the thermosetting resin film The total thickness of all layers.
In addition, as a method for measuring the thickness of the thermosetting resin film, for example, a method of measuring the thickness of the thermosetting resin film at any five locations using a contact thickness gauge and calculating the average of the measured values, etc. . Hereinafter, the measurement method of "thickness" in this specification may include the same method.
<<熱硬化性樹脂膜形成用組合物>>
熱硬化性樹脂膜,可使用含有其構成材料的熱硬化性樹脂膜形成用組合物而形成。例如,可藉由在熱硬化性樹脂膜的形成對象面塗佈熱硬化性樹脂膜形成用組合物,必要時使其乾燥,而在作為目標的部位形成熱硬化性樹脂膜。熱硬化性樹脂膜更具體的形成方法與其他層的形成方法一併於稍後詳細地說明。熱硬化性樹脂膜形成用組合物中之在常溫不會氣化的成分(亦稱為固形分)彼此的含量的比率,通常與熱硬化性樹脂膜的上述成分彼此的含量的比率相同。<<Composition for Thermosetting Resin Film Formation>>
The thermosetting resin film can be formed using a composition for forming a thermosetting resin film containing its constituent material. For example, the thermosetting resin film-forming composition can be formed on the target portion by applying the thermosetting resin film forming composition to the surface to be formed of the thermosetting resin film and drying if necessary. A more specific method for forming the thermosetting resin film will be described in detail later together with the method for forming other layers. In the thermosetting resin film forming composition, the ratio of the contents of components (also referred to as solid content) that does not vaporize at ordinary temperature is generally the same as the ratio of the contents of the above components of the thermosetting resin film.
熱硬化性樹脂膜形成用組合物的塗佈可藉由習知的方法進行,例如,可列舉使用空氣刀塗佈機、刮刀塗佈機、桿塗佈機、凹版印刷塗佈機、軋輥塗佈機、輥刀塗佈機、簾幕塗佈機、模具塗佈機、刀式塗佈機、網版塗佈機、梅耶桿塗佈機(Meyer bar coater)、吻合式塗佈機(kiss coater)等各種塗佈機的方法。The application of the composition for thermosetting resin film formation can be performed by a conventional method, and examples include air knife coaters, blade coaters, bar coaters, gravure coaters, and roll coaters. Cloth machine, roll coater, curtain coater, die coater, knife coater, screen coater, Meyer bar coater (meyer bar coater), anastomotic coater ( kiss coater) and other coating methods.
雖然熱硬化性樹脂膜形成用組合物的乾燥條件並無特別限制,但熱硬化性樹脂膜形成用組合物在含有下述溶媒的情況時,以使其加熱乾燥為佳,此時,例如,以在70~130℃以10秒鐘~5分鐘的條件使其乾燥為佳。Although the drying conditions of the thermosetting resin film forming composition are not particularly limited, when the thermosetting resin film forming composition contains the following solvent, it is preferable to heat and dry it. In this case, for example, It is better to dry at 70~130℃ for 10 seconds~5 minutes.
<樹脂層形成用組合物>
作為熱硬化性樹脂膜形成用組合物,可列舉,例如,含有聚合物成分(A)及熱硬化性成分(B)的熱硬化性樹脂膜形成用組合物(在本說明書中,有時簡稱為「樹脂層形成用組合物」)等。<Composition for resin layer formation>
Examples of the composition for thermosetting resin film formation include, for example, a composition for thermosetting resin film formation containing a polymer component (A) and a thermosetting component (B) (in this specification, it may be abbreviated sometimes). "Composition for resin layer formation") etc.
[聚合物成分(A)]
聚合物成分(A)是用以在熱硬化性樹脂膜賦予造膜性、可撓性等的聚合物化合物,聚合性化合物被認為是進行聚合反應而形成的成分。且,在本說明書中,聚合反應亦包括聚縮合反應。
樹脂層形成用組合物及熱硬化性樹脂膜所含有的聚合物成分(A),可以僅為1種,亦可為2種以上。當聚合物成分(A)為2種以上時,可任意地選擇該等的組合及比率。[Polymer component (A)]
The polymer component (A) is a polymer compound for imparting film-forming properties and flexibility to the thermosetting resin film, and the polymerizable compound is considered to be a component formed by polymerization reaction. In addition, in this specification, the polymerization reaction also includes a polycondensation reaction.
The polymer component (A) contained in the composition for forming a resin layer and the thermosetting resin film may be only one kind or two or more kinds. When the polymer component (A) is two or more types, the combination and ratio of these can be arbitrarily selected.
作為聚合物成分(A),可列舉,例如,聚乙烯縮醛、丙烯酸系樹脂、聚酯、胺基甲酸乙酯系樹脂、丙烯酸胺基甲酸乙酯樹脂、矽酮系樹脂、橡膠系樹脂、苯氧基樹脂、熱可塑性聚醯亞胺等,從易於調整在使其熱硬化的過程的溫度範圍,亦即在90℃~130℃時的剪切黏度,以及將熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,提高抑制半導體晶圓的表面的收縮的效果的觀點來看,以聚乙烯縮醛、丙烯酸系樹脂為佳。Examples of the polymer component (A) include polyvinyl acetal, acrylic resin, polyester, urethane resin, urethane acrylate resin, silicone resin, rubber resin, Phenoxy resin, thermoplastic polyimide, etc., are easy to adjust the temperature range in the process of heat curing, that is, the shear viscosity at 90 ℃ ~ 130 ℃, and attach the thermosetting resin film From the viewpoint of improving the effect of suppressing the shrinkage of the surface of the semiconductor wafer when the surface of the semiconductor wafer having bumps is thermally hardened, polyvinyl acetal and acrylic resin are preferred.
聚合物成分(A)中作為上述聚乙烯縮醛,可列舉習知者。
當中,作為較佳的聚乙烯縮醛,可列舉,例如,聚乙烯縮甲醛、聚乙烯縮丁醛等,以聚乙烯縮丁醛為更佳。
作為聚乙烯縮丁醛,可列舉具有下述式(i)-1、(i)-2及(i)-3表示的構成單元者。從易於調整在使其熱硬化的過程的溫度範圍,亦即在90℃~130℃時的剪切黏度來看,作為聚乙烯縮丁醛,以具有下述式(i)-1、(i)-2及(i)-3表示的構成單元者為佳。此外,從將熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,提高抑制半導體晶圓的表面的收縮的效果的觀點來看,作為聚乙烯縮丁醛,以具有下述式(i)-1、(i)-2及(i)-3表示的構成單元者為佳。In the polymer component (A), the above-mentioned polyvinyl acetal may be a conventional one.
Among them, preferred polyvinyl acetals include, for example, polyvinyl formal and polyvinyl butyral, and polyvinyl butyral is more preferred.
Examples of polyvinyl butyral include those having structural units represented by the following formulas (i)-1, (i)-2, and (i)-3. From the viewpoint of easy adjustment of the temperature range during the thermal hardening process, that is, the shear viscosity at 90°C to 130°C, the polyvinyl butyral has the following formulas (i)-1 and (i )-2 and (i)-3 are preferred as the structural unit. In addition, from the viewpoint of attaching a thermosetting resin film to a bumped surface of a semiconductor wafer and thermosetting it, the effect of suppressing the shrinkage of the surface of the semiconductor wafer is improved. It is preferable to have a structural unit represented by the following formulas (i)-1, (i)-2, and (i)-3.
[化1]
[Chemical 1]
式中,l1 、m1 及n1 是各別的構成單元的含有比例(mol%)。In the formula, l 1 , m 1 and n 1 are the content ratio (mol%) of each constituent unit.
聚乙烯縮醛的重量平均分子量(Mw),以5000~200000為佳, 以8000~100000為更佳,以9000~80000為進一步更佳,以10000~50000為特佳。藉由聚乙烯縮醛的重量平均分子量為此範圍,硬化前的熱硬化性樹脂膜以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值可易於調整為500Pa‧s以上,將熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,抑制半導體晶圓的表面的收縮的效果變得更加提高。此外,抑制在凸塊的上述上部(凸塊的頂部及其附近區域)的熱硬化性樹脂膜的殘留的效果變得更加提高。The weight average molecular weight (Mw) of the polyvinyl acetal is preferably 5,000 to 200,000, more preferably 8,000 to 100,000, even more preferably 9,000 to 80,000, and particularly preferably 10,000 to 50,000. With the weight average molecular weight of polyvinyl acetal in this range, when the thermosetting resin film before curing is heated at 10°C/min, the minimum shear viscosity at 90°C to 130°C can be easily adjusted to When 500Pa‧s or more, the thermosetting resin film is attached to the bumped surface of the semiconductor wafer, and when it is thermally cured, the effect of suppressing the shrinkage of the surface of the semiconductor wafer is further improved. In addition, the effect of suppressing the remaining of the thermosetting resin film on the upper part of the bump (the top of the bump and its vicinity) becomes more improved.
縮丁醛基的構成單元的含有比例l1 (縮丁醛化程度),以40~90mol%為佳,以50~85mol%為更佳,以60~76mol%為特佳。The content ratio l 1 (butyralization degree) of the constituent unit of the butyral group is preferably 40 to 90 mol%, more preferably 50 to 85 mol%, and particularly preferably 60 to 76 mol%.
具有乙醯基的構成單元的含有比例m1 ,以0.1~9mol%為佳, 以0.5~8mol%為更佳,以1~7mol%為特佳。The content ratio m 1 of the structural unit having an acetyl group is preferably 0.1 to 9 mol%, more preferably 0.5 to 8 mol%, and particularly preferably 1 to 7 mol%.
具有羥基的構成單元的含有比例n1 ,以10~60mol%為佳,以10~50mol%為更佳,以20~40mol%為特佳。The content ratio n 1 of the structural unit having a hydroxyl group is preferably 10 to 60 mol%, more preferably 10 to 50 mol%, and particularly preferably 20 to 40 mol%.
聚乙烯縮醛的玻璃轉換溫度(Tg),以40~80℃為佳,以50~70℃為更佳。藉由聚乙烯縮醛的Tg為此範圍,將熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面時,抑制在凸塊的上述上部的熱硬化性樹脂膜的殘留的效果變得更加提高。此外,藉由Tg為此範圍,可獲得具有充分硬度的熱硬化後的第一保護膜。
在本說明書中,「玻璃轉換溫度(Tg)」,是使用示差掃描熱卡計,測定樣品的DSC曲線,以所得的DSC曲線的反曲點的溫度表示。The glass transition temperature (Tg) of polyvinyl acetal is preferably 40 to 80°C, and more preferably 50 to 70°C. With the Tg of the polyvinyl acetal in this range, when the thermosetting resin film is attached to the surface of the semiconductor wafer with bumps, the effect of suppressing the residual of the thermosetting resin film on the upper part of the bumps becomes To be more improved. In addition, when the Tg is in this range, the first protective film after heat curing with sufficient hardness can be obtained.
In this specification, "glass transition temperature (Tg)" refers to the DSC curve of a sample measured using a differential scanning calorimeter, and is expressed as the temperature of the inversion point of the obtained DSC curve.
構成聚乙烯縮醛的3種以上的單體的比率可任意選擇。The ratio of three or more types of monomers constituting the polyvinyl acetal can be arbitrarily selected.
作為聚合物成分(A)中的上述丙烯酸系樹脂,可列舉習知的丙烯酸聚合物。
丙烯酸系樹脂的重量平均分子量(Mw),以10000~2000000為佳,以100000~1500000為更佳。藉由丙烯酸系樹脂的重量平均分子量為此範圍,硬化前的熱硬化性樹脂膜以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值可易於調整為500Pa‧s以上,將熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,抑制半導體晶圓的表面的收縮的效果變得更加提高。此外,形狀安定性佳,熱硬化性樹脂膜易於服貼被附著體的凹凸面,進一步抑制在被附著體與熱硬化性樹脂膜之間孔洞等的發生。Examples of the acrylic resin in the polymer component (A) include conventional acrylic polymers.
The weight average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, and more preferably 100,000 to 1,500,000. With the weight average molecular weight of the acrylic resin in this range, when the thermosetting resin film before curing is heated at 10°C/min, the minimum shear viscosity at 90°C to 130°C can be easily adjusted to 500 Pa ‧For more than s, when the thermosetting resin film is attached to the bumped surface of the semiconductor wafer, and it is thermally cured, the effect of suppressing the shrinkage of the surface of the semiconductor wafer is further improved. In addition, the shape stability is good, and the thermosetting resin film easily adheres to the uneven surface of the adherend, further suppressing the occurrence of voids and the like between the adherend and the thermosetting resin film.
丙烯酸系樹脂的玻璃轉換溫度(Tg),以-50~70℃為佳,以-30~50℃為更佳。藉由丙烯酸系樹脂的Tg為上述下限值以上,可抑制第一保護膜與第一支撐片材的接著力,而提升第一支撐片材的剝離性。此外,藉由丙烯酸系樹脂的Tg為上述上限值以下,可提升熱硬化性樹脂膜及第一保護膜的與被附著體的接著力。The glass transition temperature (Tg) of acrylic resin is preferably -50~70℃, more preferably -30~50℃. When the Tg of the acrylic resin is equal to or higher than the above lower limit, the adhesive force between the first protective film and the first support sheet can be suppressed, and the peelability of the first support sheet can be improved. In addition, when the Tg of the acrylic resin is equal to or less than the above upper limit value, the adhesion of the thermosetting resin film and the first protective film to the adherend can be improved.
作為丙烯酸系樹脂,可列舉,例如,1種或2種以上的(甲基)丙烯酸酯的聚合物;(甲基)丙烯酸酯以外,1種或2種以上選自(甲基)丙烯酸、伊康酸、乙酸乙烯酯、丙烯腈、苯乙烯及N-羥甲基丙烯醯胺等的單體經共聚合而成的共聚合物等。
且,在本說明書中,「(甲基)丙烯酸」是包含「丙烯酸」及「甲基丙烯酸」兩者的概念。與(甲基)丙烯酸類似的用語也是同樣的意思,例如,「(甲基)丙烯酸酯」是包含「丙烯酸酯」及「甲基丙烯酸酯」兩者的概念,「(甲基)丙烯醯基」是包含「丙烯醯基」及「甲基丙烯醯基」兩者的概念。Examples of the acrylic resin include, for example, one kind or two or more kinds of (meth)acrylate polymers; other than the (meth)acrylate, one or more kinds are selected from (meth)acrylic acid, Iraqi Copolymers made by copolymerizing monomers such as acetic acid, vinyl acetate, acrylonitrile, styrene, and N-methylolacrylamide, etc.
In addition, in this specification, "(meth)acrylic acid" is a concept containing both "acrylic acid" and "methacrylic acid". Similar terms to (meth)acrylic acid have the same meaning, for example, "(meth)acrylate" is a concept that includes both "acrylate" and "methacrylate", "(meth)acryloyl""Is a concept that includes both "acryloyl" and "methacryloyl".
作為構成丙烯酸系樹脂的上述(甲基)丙烯酸酯,可列舉,例如,(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸二級丁酯、(甲基)丙烯酸三級丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一酯、(甲基)丙烯酸十二酯(亦稱為(甲基)丙烯酸月桂酯)、(甲基)丙烯酸十三酯、(甲基)丙烯酸十四酯(亦稱為(甲基)丙烯酸肉豆蔻酯)、(甲基)丙烯酸十五酯、(甲基)丙烯酸十六酯(亦稱為(甲基)丙烯酸棕櫚酯)、(甲基)丙烯酸十七酯、(甲基)丙烯酸十八酯(亦稱為(甲基)丙烯酸硬脂醯酯)等的構成烷基酯的烷基為碳數為1~18的鏈狀構造的(甲基)丙烯酸烷基酯;
(甲基)丙烯酸異莰酯、(甲基)丙烯酸二環戊基酯等的(甲基)丙烯酸環烷基酯;
(甲基)丙烯酸苄酯等的(甲基)丙烯酸芳烷基酯;
(甲基)丙烯酸二環戊烯基酯等的(甲基)丙烯酸環烯基酯;
(甲基)丙烯酸二環烯基氧基乙基酯等的(甲基)丙烯酸環烯基氧基烷基酯;
(甲基)丙烯酸醯亞胺;
(甲基)丙烯酸縮水甘油酯等的含縮水甘油基的(甲基)丙烯酸酯;
(甲基)丙烯酸羥甲酯、(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸3-羥丙酯、(甲基)丙烯酸2-羥丁酯、(甲基)丙烯酸3-羥丁酯、(甲基)丙烯酸4-羥丁酯等的含羥基的(甲基)丙烯酸酯;
(甲基)丙烯酸N-甲基胺基乙酯等的含取代胺基的(甲基)丙烯酸酯等。在此,所謂「取代胺基」,是指胺基的1個或2個氫原子被氫原子以外的基取代而成的基。Examples of the (meth)acrylate constituting the acrylic resin include, for example, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, and (meth)acrylic acid. Propyl ester, n-butyl (meth)acrylate, isobutyl (meth)acrylate, secondary butyl (meth)acrylate, tertiary butyl (meth)acrylate, pentyl (meth)acrylate, ( Hexyl meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, (meth)acrylic acid N-nonyl ester, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate (also known as lauryl (meth)acrylate) , Tridecyl (meth)acrylate, tetradecyl (meth)acrylate (also known as myristyl (meth)acrylate), pentadecyl (meth)acrylate, cetyl (meth)acrylate ( Also known as (meth)acrylic acid palm ester), (meth)acrylic acid heptadecyl ester, (meth)acrylic acid octadecyl ester (also known as (meth)acrylic stearyl ester), etc. constituting the alkyl ester The alkyl group is a chain structure alkyl (meth)acrylate having 1 to 18 carbon atoms;
(Meth)acrylic acid cyclopentyl (meth)acrylate, isocamphenyl (meth)acrylate, dicyclopentyl (meth)acrylate;
Aralkyl (meth)acrylates such as benzyl (meth)acrylate;
Cycloalkenyl (meth)acrylate such as dicyclopentenyl (meth)acrylate;
(Meth)acrylic acid cycloalkenyloxyalkyl esters such as (meth)acrylic acid dicycloalkenyloxyethyl esters;
(Meth)acrylic acid imide;
Glycidyl group-containing (meth)acrylates such as glycidyl (meth)acrylate;
Hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxy (meth)acrylate Hydroxyl-containing (meth)acrylates such as butyl ester, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate;
Substituted amine group-containing (meth)acrylates such as N-methylaminoethyl (meth)acrylate. Here, the "substituted amine group" refers to a group in which one or two hydrogen atoms of the amine group are substituted with groups other than hydrogen atoms.
構成丙烯酸系樹脂的單體可僅為1種,亦可為2種以上。當構成丙烯酸系樹脂的單體為2種以上時,可任意選擇此等的組合及比率。The monomer constituting the acrylic resin may be only one kind, or two or more kinds. When there are two or more monomers constituting the acrylic resin, these combinations and ratios can be arbitrarily selected.
丙烯酸系樹脂亦可具有乙烯基、(甲基)丙烯醯基、胺基、羥基、羧基、異氰酸酯基等可與其他化合物鍵結的官能基。丙烯酸系樹脂的上述官能基可透過下述交聯劑(F)與其他化合物鍵結,亦可不透過交聯劑(F)而與其他化合物直接鍵結。由於丙烯酸系樹脂藉由上述官能基與其他化合物鍵結,因而使用第一保護膜形成用片材所獲得的封裝的可靠度有提升的傾向。The acrylic resin may also have functional groups that can bond with other compounds, such as vinyl groups, (meth)acryloyl groups, amine groups, hydroxyl groups, carboxyl groups, and isocyanate groups. The above-mentioned functional group of the acrylic resin may be bonded to other compounds through the following crosslinking agent (F), or may be directly bonded to other compounds without passing through the crosslinking agent (F). Since the acrylic resin is bonded to other compounds through the above functional groups, the reliability of the encapsulation obtained by using the first protective film forming sheet tends to be improved.
本發明中,例如,作為聚合物成分(A),聚乙烯縮醛及丙烯酸系樹脂以外的熱可塑性樹脂(以下,有時簡稱為「熱可塑性樹脂」)可在不使用聚乙烯縮醛及丙烯酸系樹脂的情況下單獨地使用,亦可與聚乙烯縮醛或丙烯酸系樹脂併用。藉由使用上述熱可塑性樹脂,第一保護膜從第一支撐片材的剝離性提升,熱硬化性樹脂膜變得易於服貼被附著體的凹凸面,進一步抑制在被附著體與熱硬化性樹脂膜之間孔洞等的發生。In the present invention, for example, as the polymer component (A), a thermoplastic resin other than polyvinyl acetal and acrylic resin (hereinafter, sometimes simply referred to as "thermoplastic resin") may be used without using polyvinyl acetal and acrylic In the case of a system resin, it is used alone, and it can also be used together with polyvinyl acetal or acrylic resin. By using the above thermoplastic resin, the releasability of the first protective film from the first support sheet is improved, the thermosetting resin film becomes easier to adhere to the uneven surface of the adherend, and the adherence and thermosetting properties are further suppressed The occurrence of holes and the like between resin films.
上述熱可塑性樹脂的重量平均分子量,以1000~100000為佳,較佳為3000~80000。The weight average molecular weight of the thermoplastic resin is preferably 1,000 to 100,000, preferably 3,000 to 80,000.
上述熱可塑性樹脂的玻璃轉換溫度(Tg) ,以-30~150℃為佳,以-20~120℃為更佳。The glass transition temperature (Tg) of the thermoplastic resin is preferably -30 to 150°C, and more preferably -20 to 120°C.
作為上述熱可塑性樹脂,可列舉,例如,聚酯、聚氨酯、苯氧基樹脂、聚丁烯、聚丁二烯、聚苯乙烯等。Examples of the thermoplastic resin include polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, and polystyrene.
樹脂層形成用組合物及熱硬化性樹脂膜所含有的上述熱可塑性樹脂,可僅為1種,亦可為2種以上。當上述熱可塑性樹脂為2種以上時,可任意地選擇此等的組合及比率。The thermoplastic resin contained in the composition for forming a resin layer and the thermosetting resin film may be only one kind, or two or more kinds. When there are two or more thermoplastic resins, these combinations and ratios can be arbitrarily selected.
樹脂層形成用組合物中,相對於溶媒以外的全部成分的總含量(樹脂層形成用組合物的固形分的總質量),聚合物成分(A)的含量的比例(即,熱硬化性樹脂膜的聚合物成分(A)的含量),無論聚合物成分(A)的種類為何,以5~85質量%為佳,以5~80質量%為更佳,例如,可以是5~70質量%、5~60質量%、5~50質量%、5~40質量%以及5~30質量%的任一者。但是,在樹脂層形成用組合物中的此等含量僅為一例。In the composition for forming a resin layer, the ratio of the content of the polymer component (A) to the total content of all components other than the solvent (total mass of the solid content of the composition for forming a resin layer) (ie, thermosetting resin) The content of the polymer component (A) of the film), regardless of the type of the polymer component (A), preferably 5 to 85% by mass, more preferably 5 to 80% by mass, for example, 5 to 70% by mass %, 5-60% by mass, 5-50% by mass, 5-40% by mass, and 5-30% by mass. However, these contents in the composition for forming a resin layer are only examples.
聚合物成分(A)也有可對應於熱硬化性成分(B)的情況。在本說明書中,樹脂層形成用組合物含有對應於此類聚合物成分(A)及熱硬化性成分(B)兩者的成分時,視為樹脂層形成用組合物含有聚合物成分(A)及熱硬化性成分(B)。The polymer component (A) may correspond to the thermosetting component (B). In the present specification, when the composition for forming a resin layer contains components corresponding to both the polymer component (A) and the thermosetting component (B), it is considered that the composition for forming a resin layer contains the polymer component (A ) And thermosetting component (B).
[熱硬化性成分(B)]
熱硬化性成分(B)是使熱硬化性樹脂膜硬化,用以形成硬質的第一保護膜的成分。
樹脂層形成用組合物及熱硬化性樹脂膜所含有的熱硬化性成分(B),可僅為1種,亦可為2種以上。當熱硬化性成分(B)為2種以上時,可任意地選擇此等的組合及比率。[Thermosetting component (B)]
The thermosetting component (B) is a component for curing the thermosetting resin film to form a hard first protective film.
The thermosetting component (B) contained in the composition for forming a resin layer and the thermosetting resin film may be only one kind or two or more kinds. When the thermosetting component (B) is two or more types, these combinations and ratios can be arbitrarily selected.
作為熱硬化性成分(B),可列舉,例如,環氧系熱硬化性樹脂、熱硬化性聚醯亞胺、聚氨酯、不飽和聚酯、矽酮樹脂等,以環氧系熱硬化性樹脂為佳。Examples of the thermosetting component (B) include, for example, epoxy-based thermosetting resin, thermosetting polyimide, polyurethane, unsaturated polyester, silicone resin, etc., epoxy-based thermosetting resin Better.
(環氧系熱硬化性樹脂)
環氧系熱硬化性樹脂是由環氧樹脂(B1)及熱硬化劑(B2)所構成。
樹脂層形成用組合物及熱硬化性樹脂膜所含有的環氧系熱硬化性樹脂,可僅為1種,亦可為2種以上。當環氧系熱硬化性樹脂為2種以上時,可任意地選擇此等的組合及比率。(Epoxy thermosetting resin)
The epoxy-based thermosetting resin is composed of an epoxy resin (B1) and a thermosetting agent (B2).
The epoxy-based thermosetting resin contained in the composition for forming a resin layer and the thermosetting resin film may be only one kind or two or more kinds. When there are two or more epoxy-based thermosetting resins, these combinations and ratios can be arbitrarily selected.
‧環氧樹脂(B1)
作為環氧樹脂(B1),可列舉習知者,例如,多官能系環氧樹脂、聯苯化合物、雙酚A二縮水甘油醚及其氫化物、鄰甲酚酚醛環氧樹脂、二環戊二烯型環氧樹脂、聯苯型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、伸苯基骨架型環氧樹脂等、2官能以上的環氧化合物。‧Epoxy resin (B1)
Examples of the epoxy resin (B1) include conventional ones, for example, polyfunctional epoxy resin, biphenyl compound, bisphenol A diglycidyl ether and its hydrogenated product, o-cresol novolac epoxy resin, dicyclopentane Diene-type epoxy resins, biphenyl-type epoxy resins, bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, phenylene skeleton-type epoxy resins, etc., and more than two functional epoxy compounds.
作為環氧樹脂(B1),亦可使用具有不飽和烴基的環氧樹脂。具有不飽和烴基的環氧樹脂比起不具有不飽和烴基的環氧樹脂,與丙烯酸系樹脂的相溶性較高。因此,藉由使用具有不飽和烴基的環氧樹脂,使用第一保護膜形成用片材所獲得的封裝的可靠度提升。As the epoxy resin (B1), an epoxy resin having an unsaturated hydrocarbon group can also be used. Epoxy resins having unsaturated hydrocarbon groups have higher compatibility with acrylic resins than epoxy resins having no unsaturated hydrocarbon groups. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained by using the first protective film forming sheet is improved.
作為具有不飽和烴基的環氧樹脂,可列舉,例如,多官能系環氧樹脂的環氧基的一部分轉換為具有不飽和烴基的基而成的化合物。此類化合物,例如,可藉由(甲基)丙烯酸或其衍生物對環氧基進行加成反應而獲得。
此外,作為具有不飽和烴基的環氧樹脂,可列舉,例如,在構成環氧樹脂的芳香環等直接鍵結具有不飽和烴基的基的化合物等。
不飽和烴基是具有聚合性的不飽和基,作為其具體例,可列舉,次乙基(亦稱為乙烯基)、2-丙烯基(亦稱為烯丙基)、(甲基)丙烯醯基、(甲基)丙烯醯胺基等,以丙烯醯基為佳。Examples of the epoxy resin having an unsaturated hydrocarbon group include, for example, compounds in which a part of epoxy groups of a multifunctional epoxy resin is converted into a group having an unsaturated hydrocarbon group. Such compounds can be obtained, for example, by addition reaction of (meth)acrylic acid or its derivatives to epoxy groups.
In addition, examples of the epoxy resin having an unsaturated hydrocarbon group include, for example, compounds in which a group having an unsaturated hydrocarbon group is directly bonded to an aromatic ring constituting the epoxy resin.
The unsaturated hydrocarbon group is a polymerizable unsaturated group, and specific examples thereof include methine (also referred to as vinyl), 2-propenyl (also referred to as allyl), and (meth)acryloyl Group, (meth) acrylamide group, etc., preferably acryl group.
環氧樹脂(B1)的重量平均分子量,以15000以下為佳,以10000以下為更佳,以5000以下為特佳。藉由環氧樹脂(B1)的重量平均分子量為上述上限值以下,硬化前的熱硬化性樹脂膜以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值變得可易於調整為500Pa‧s以上,將熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,抑制半導體晶圓的表面的收縮的效果變得更加提高。此外,在凸塊的頭頂部,抑制第一保護膜殘留物的殘留的效果變得更加提高。The weight average molecular weight of the epoxy resin (B1) is preferably 15,000 or less, more preferably 10,000 or less, and particularly preferably 5,000 or less. When the weight average molecular weight of the epoxy resin (B1) is equal to or less than the above upper limit, when the thermosetting resin film before curing is heated at 10°C/min, the minimum shear viscosity at 90°C to 130°C The value can be easily adjusted to 500 Pa‧s or more, and the thermosetting resin film is attached to the surface of the semiconductor wafer with bumps, and when it is thermally cured, the effect of suppressing the shrinkage of the surface of the semiconductor wafer becomes more improve. In addition, at the top of the bump, the effect of suppressing the residue of the first protective film becomes more enhanced.
環氧樹脂(B1)的重量平均分子量的下限值,並無特別限定。但是,從提升熱硬化性樹脂膜的硬化性,以及第一保護膜的強度及耐熱性的觀點來看,環氧樹脂(B1)的重量平均分子量以300以上為佳,以500以上為更佳。The lower limit of the weight average molecular weight of the epoxy resin (B1) is not particularly limited. However, from the viewpoint of improving the curability of the thermosetting resin film, and the strength and heat resistance of the first protective film, the weight average molecular weight of the epoxy resin (B1) is preferably 300 or more, more preferably 500 or more .
環氧樹脂(B1)的重量平均分子量,可將上述較佳下限值及上限值任意地組合,以使其成為設定範圍內的方式而適當地調整。
例如,在一實施形態中,環氧樹脂(B1)的重量平均分子量,以300~15000為佳,以300~10000為更佳,以300~3000為特佳。此外,在一實施形態中,環氧樹脂(B1)的重量平均分子量,以500~15000為佳,以500~10000為更佳,以500~3000為特佳。但是,此等僅為環氧樹脂(B1)較佳重量平均分子量的一例。The weight-average molecular weight of the epoxy resin (B1) can be arbitrarily combined with the above-mentioned preferred lower limit and upper limit so as to be appropriately adjusted so as to fall within a set range.
For example, in one embodiment, the weight average molecular weight of the epoxy resin (B1) is preferably 300 to 15,000, more preferably 300 to 10,000, and particularly preferably 300 to 3000. In addition, in one embodiment, the weight average molecular weight of the epoxy resin (B1) is preferably 500-15000, more preferably 500-10000, and particularly preferably 500-3000. However, these are only examples of preferred weight average molecular weight of the epoxy resin (B1).
環氧樹脂(B1)的環氧當量以100~1000g/eq為佳,以130~800g/eq為更佳。
在本說明書中,所謂「環氧當量」,是指含有1克當量的環氧基的環氧化合物的克數(g/eq),可依據JIS K 7236:2001的方法測定。The epoxy equivalent of the epoxy resin (B1) is preferably 100 to 1000 g/eq, more preferably 130 to 800 g/eq.
In this specification, the "epoxy equivalent" refers to the gram number (g/eq) of an epoxy compound containing 1 gram equivalent of epoxy groups, and can be measured according to the method of JIS K 7236:2001.
環氧樹脂(B1),以在常溫為液狀者(在本說明書中,有時簡稱為「液狀的環氧樹脂(B1)」)為佳。在常溫使用液狀的環氧樹脂時,從易於調整剪切黏度的觀點來看,是較佳的。The epoxy resin (B1) is preferably one that is liquid at ordinary temperature (in this specification, it is sometimes simply referred to as "liquid epoxy resin (B1)"). When a liquid epoxy resin is used at normal temperature, it is preferable from the viewpoint of easy adjustment of the shear viscosity.
環氧樹脂(B1)可單獨使用1種,亦可併用2種以上。當併用2種以上環氧樹脂(B1)時,可任意地選擇此等的組合及比率。One type of epoxy resin (B1) may be used alone, or two or more types may be used in combination. When two or more epoxy resins (B1) are used in combination, these combinations and ratios can be arbitrarily selected.
樹脂層形成用組合物及熱硬化性樹脂膜所含有的環氧樹脂(B1)當中,液狀的環氧樹脂(B1)的比例,相對於環氧樹脂(B1)的總質量,以40質量%以上為佳,以50質量%以上為更佳,以55質量%以上為特佳,例如,可以是60質量%以上、70質量%以上、80質量%以上以及90質量%以上的任一者。藉由上述比例為上述下限值以上,硬化前的熱硬化性樹脂膜以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值變得易於調整為500Pa‧s以上,將熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,抑制半導體晶圓的表面的收縮的效果變得更加提高。此外,在凸塊的頭頂部,抑制第一保護膜殘留物的殘留的效果變得更加提高。
上述比例的上限值並無特別限定,但上述比例以100質量%以下為佳。
樹脂層形成用組合物及熱硬化性樹脂膜所含有的環氧樹脂(B1)當中,液狀的環氧樹脂(B1)的比例,相對於環氧樹脂(B1)的總質量,以40質量%以上、100質量%以下為佳,以50質量%、以上100質量%以下為更佳,以55質量%以上、100質量%以下為特佳。
樹脂層形成用組合物及熱硬化性樹脂膜所含有的環氧樹脂(B1)當中,液狀的環氧樹脂(B1)的比例,相對於環氧樹脂(B1)的總質量,亦可為60質量%以上、100質量%以下,70質量%以上、100質量%以下,80質量%以上、100質量%以下,90質量%以上、100質量%以下的任一者。The ratio of the liquid epoxy resin (B1) among the epoxy resin (B1) contained in the composition for forming a resin layer and the thermosetting resin film is 40% relative to the total mass of the epoxy resin (B1) % Or better, more preferably 50% by mass or more, and particularly preferably 55% by mass or more, for example, any one of 60% by mass or more, 70% by mass or more, 80% by mass or more, and 90% by mass or more . With the above ratio above the lower limit, when the thermosetting resin film before curing is heated at 10°C/min, the minimum shear viscosity at 90°C to 130°C can be easily adjusted to 500 Pa At least s, when the thermosetting resin film is attached to the surface of the semiconductor wafer having bumps, and it is thermoset, the effect of suppressing the shrinkage of the surface of the semiconductor wafer is further improved. In addition, at the top of the bump, the effect of suppressing the residue of the first protective film becomes more enhanced.
The upper limit of the above ratio is not particularly limited, but the above ratio is preferably 100% by mass or less.
The ratio of the liquid epoxy resin (B1) among the epoxy resin (B1) contained in the composition for forming a resin layer and the thermosetting resin film is 40% relative to the total mass of the epoxy resin (B1) % Or more and 100% by mass or less are preferable, 50% by mass or more and 100% by mass or less are more preferable, and 55% by mass or more and 100% by mass or less are particularly preferable.
Among the epoxy resin (B1) contained in the composition for forming a resin layer and the thermosetting resin film, the ratio of the liquid epoxy resin (B1) to the total mass of the epoxy resin (B1) may be Any one of 60 mass% or more and 100 mass% or less, 70 mass% or more, 100 mass% or less, 80 mass% or more, 100 mass% or less, 90 mass% or more and 100 mass% or less.
‧熱硬化劑(B2)
熱硬化劑(B2)具有作為對環氧樹脂(B1)的硬化劑的功能。
作為熱硬化劑(B2),可列舉,例如,在1分子中具有2個以上可與環氧基反應的官能基的化合物。作為上述官能基,可列舉,例如,酚性羥基、醇性羥基、胺基、羧基、酸基經酸酐化的基等,以酚性羥基、胺基、或酸基經酸酐化的基為佳,以酚性羥基或胺基為更佳。‧Heat hardener (B2)
The thermal hardener (B2) has a function as a hardener for the epoxy resin (B1).
Examples of the thermosetting agent (B2) include compounds having two or more functional groups that can react with epoxy groups in one molecule. Examples of the above functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amine groups, carboxyl groups, and acidified groups such as acid groups. Phenolic hydroxyl groups, amine groups, or acidified groups are preferably acidified groups. , Phenolic hydroxyl or amine groups are more preferred.
熱硬化劑(B2)當中,作為具有酚性羥基的酚系硬化劑,可列舉,例如,多官能酚樹脂、聯苯酚、酚醛型酚樹脂、二環戊二烯型酚樹脂、芳烷基型酚樹脂等。
熱硬化劑(B2)當中,作為具有胺基的胺系硬化劑,可列舉,例如,二氰二胺(在本說明書中,簡記為「DICY」)等。Among the thermosetting agents (B2), examples of the phenolic curing agent having a phenolic hydroxyl group include, for example, polyfunctional phenol resin, biphenol, phenolic phenol resin, dicyclopentadiene phenol resin, and aralkyl type Phenol resin etc.
Among the thermal hardeners (B2), examples of the amine-based hardener having an amine group include dicyandiamine (abbreviated as "DICY" in this specification).
熱硬化劑(B2)亦可為具有不飽和烴基者。
作為具有不飽和烴基的熱硬化劑(B2),可列舉,例如,酚樹脂的羥基的一部分被具有不飽和烴基的基取代而成的化合物,在酚樹脂的芳香環上直接鍵結具有不飽和烴基的基而成的化合物等。
在熱硬化劑(B2)中的上述不飽和烴基,是與在上述具有不飽和烴基的環氧樹脂中的不飽和烴基相同者。The thermal hardener (B2) may also have an unsaturated hydrocarbon group.
As the thermosetting agent (B2) having an unsaturated hydrocarbon group, for example, a compound in which a part of the hydroxyl group of a phenol resin is substituted by a group having an unsaturated hydrocarbon group, and the unsaturated ring directly bonded to the aromatic ring of the phenol resin has unsaturated Hydrocarbon-based compounds.
The unsaturated hydrocarbon group in the thermosetting agent (B2) is the same as the unsaturated hydrocarbon group in the epoxy resin having an unsaturated hydrocarbon group.
使用酚系硬化劑作為熱硬化劑(B2)的情況中,就提升第一保護膜的從第一支撐片材的剝離性的觀點而言,熱硬化劑(B2),以軟化點或玻璃轉換溫度高者為佳。In the case of using a phenol-based hardener as the thermosetting agent (B2), from the viewpoint of improving the peelability of the first protective film from the first support sheet, the thermosetting agent (B2) uses a softening point or glass transition High temperature is better.
熱硬化劑(B2)當中,例如,多官能酚樹脂、酚醛型酚樹脂、二環戊二烯型酚樹脂、芳烷基型酚樹脂等樹脂成分的數平均分子量,以300~30000為佳,以400~10000為更佳,以500~3000為特佳。
在本說明書中,「數平均分子量」,若無特別說明,是指藉由凝膠滲透層析法(GPC)所測定的標準聚苯乙烯換算的值所表示的數平均分子量。
熱硬化劑(B2)當中,例如,聯苯酚、二氰二胺等非樹脂成分的分子量雖然無特別限制,但例如以60~500為佳。Among the thermosetting agents (B2), for example, the number average molecular weight of resin components such as polyfunctional phenol resins, phenolic phenol resins, dicyclopentadiene phenol resins, and aralkyl phenol resins is preferably 300 to 30,000. 400~10000 is better, 500~3000 is especially good.
In this specification, "number average molecular weight", unless otherwise specified, refers to the number average molecular weight expressed by the value converted from standard polystyrene measured by gel permeation chromatography (GPC).
Among the thermosetting agents (B2), for example, although the molecular weight of non-resin components such as biphenol and dicyandiamide is not particularly limited, it is preferably 60 to 500, for example.
熱硬化劑(B2)可單獨使用1種,亦可併用2種以上。當併用2種以上熱硬化劑(B2)時,可任意地選擇此等的組合及比率。One type of thermosetting agent (B2) may be used alone, or two or more types may be used in combination. When two or more thermosetting agents (B2) are used in combination, these combinations and ratios can be arbitrarily selected.
在樹脂層形成用組合物及熱硬化性樹脂膜中,熱硬化劑(B2)的含量,相對於環氧樹脂(B1)的含量100質量份,以0.1~500質量份為佳,以1~200質量份為更佳,例如,可以是1~150質量份、1~100質量份、1~75質量份、1~50質量份以及1~30質量份的任一者。藉由熱硬化劑(B2)的上述含量為上述下限值以上,變得更易於進行熱硬化性樹脂膜的硬化。此外,藉由熱硬化劑(B2)的上述含量為上述上限值以下,使熱硬化性樹脂膜的吸濕率降低,可提升使用第一保護膜所獲得的封裝的可靠度。In the composition for forming a resin layer and the thermosetting resin film, the content of the thermosetting agent (B2) is preferably 0.1 to 500 parts by mass relative to 100 parts by mass of the epoxy resin (B1), and 1 to 200 parts by mass is more preferable, for example, any one of 1 to 150 parts by mass, 1 to 100 parts by mass, 1 to 75 parts by mass, 1 to 50 parts by mass, and 1 to 30 parts by mass. When the content of the thermosetting agent (B2) is at least the above lower limit value, it becomes easier to cure the thermosetting resin film. In addition, when the content of the thermosetting agent (B2) is equal to or less than the upper limit, the moisture absorption rate of the thermosetting resin film is reduced, and the reliability of the package obtained using the first protective film can be improved.
在樹脂層形成用組合物及熱硬化性樹脂膜中,熱硬化性成分(B)的含量(例如,環氧樹脂(B1)及熱硬化劑(B2)的總含量),相對於聚合物成分(A)的含量100質量份,以50~1000質量份為佳,以60~950質量份為更佳,以70~900質量份為特佳。藉由熱硬化性成分(B)的上述含量為此等範圍,第一保護膜與第一支撐片材的接著力受到抑制,而可提升第一支撐片材的剝離性。In the composition for forming a resin layer and the thermosetting resin film, the content of the thermosetting component (B) (for example, the total content of the epoxy resin (B1) and the thermosetting agent (B2)) relative to the polymer component The content of (A) is 100 parts by mass, preferably 50 to 1000 parts by mass, more preferably 60 to 950 parts by mass, and particularly preferably 70 to 900 parts by mass. With the above content of the thermosetting component (B) in these ranges, the adhesive force between the first protective film and the first support sheet is suppressed, and the peelability of the first support sheet can be improved.
[硬化促進劑(C)]
樹脂層形成用組合物及熱硬化性樹脂膜,亦可含有硬化促進劑(C)。硬化促進劑(C)是用以調整樹脂層形成用組合物的硬化速度的成分。
作為較佳的硬化促進劑(C),可列舉,例如,三伸乙二胺、二甲苄胺、三乙醇胺、二甲胺乙醇、參(二甲胺甲基)酚等的第3級胺;2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4,5-二羥甲基咪唑、2-苯基-4-甲基-5-羥甲基咪唑等的咪唑類(1個以上的氫原子被氫原子以外的基取代的咪唑);三丁基膦、二苯基膦、三苯基膦等的有機膦類(1個以上的氫原子被有機基取代的膦);四苯基硼酸四苯基鏻、四苯基硼酸三苯基膦等的四苯基硼鹽等。[Hardening accelerator (C)]
The composition for forming a resin layer and the thermosetting resin film may contain a curing accelerator (C). The curing accelerator (C) is a component for adjusting the curing rate of the composition for forming a resin layer.
Preferred curing accelerators (C) include, for example, tertiary amines such as triethylenediamine, dimethylbenzylamine, triethanolamine, dimethylamineethanol, ginseng (dimethylaminomethyl)phenol, etc. ; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5 -Imidazoles such as hydroxymethylimidazole (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms); organic phosphines such as tributylphosphine, diphenylphosphine, and triphenylphosphine (one or more) (Phosphine in which the hydrogen atom is substituted by an organic group); tetraphenyl boron salts such as tetraphenylphosphonium tetraphenylphosphonate, triphenylphosphine tetraphenylborate, etc.
樹脂層形成用組合物及熱硬化性樹脂膜所含有的硬化促進劑(C),可僅為1種,亦可為2種以上。當硬化促進劑(C)為2種以上時,可任意地選擇此等的組合及比率。The curing accelerator (C) contained in the composition for forming a resin layer and the thermosetting resin film may be only one kind or two or more kinds. When the hardening accelerator (C) is two or more types, these combinations and ratios can be arbitrarily selected.
當有使用硬化促進劑(C)時,在樹脂層形成用組合物及熱硬化性樹脂膜中,硬化促進劑(C)的含量,相對於熱硬化性成分(B)的含量100質量份,以0.01~10質量份為佳,以0.1~5質量份為更佳。藉由硬化促進劑(C)的上述含量為上述下限值以上,使用硬化促進劑(C)所達成的效果變得更加顯著。
此外,藉由硬化促進劑(C)的含量為上述上限值以下,例如,高極性的硬化促進劑(C)抑制在高溫、高濕度條件下於熱硬化性樹脂膜中與被附著體的接著界面側移動且偏析的效果變高,使用第一保護膜形成用片材所獲得的封裝的可靠度更加提升。When a curing accelerator (C) is used, the content of the curing accelerator (C) in the composition for forming a resin layer and the thermosetting resin film is 100 parts by mass relative to the content of the thermosetting component (B), It is preferably 0.01 to 10 parts by mass, and more preferably 0.1 to 5 parts by mass. When the content of the hardening accelerator (C) is equal to or higher than the above lower limit, the effect achieved by using the hardening accelerator (C) becomes more remarkable.
In addition, when the content of the hardening accelerator (C) is equal to or less than the above upper limit, for example, the highly polar hardening accelerator (C) suppresses the adhesion between the adherend and the adherend in the thermosetting resin film under high temperature and high humidity conditions Then, the interface side moves and the effect of segregation becomes higher, and the reliability of the package obtained by using the first protective film forming sheet is further improved.
[填充材(D)]
樹脂層形成用組合物及熱硬化性樹脂膜亦可含有填充材(D)。藉由熱硬化性樹脂膜含有填充材(D),將熱硬化性樹脂膜硬化所得的第一保護膜變得易於調整熱膨脹係數。然後,藉由對應於第一保護膜的形成對象物而最佳化此熱膨脹係數,使用第一保護膜形成用片材所獲得的封裝的可靠度提升。此外,藉由熱硬化性樹脂膜含有填充材(D),可降低第一保護膜的吸濕率,提升放熱性。[Filling material (D)]
The composition for forming a resin layer and the thermosetting resin film may contain a filler (D). When the thermosetting resin film contains the filler (D), the first protective film obtained by curing the thermosetting resin film becomes easy to adjust the thermal expansion coefficient. Then, by optimizing the thermal expansion coefficient corresponding to the object to be formed of the first protective film, the reliability of the package obtained by using the first protective film forming sheet is improved. In addition, by containing the filler (D) in the thermosetting resin film, the moisture absorption rate of the first protective film can be reduced, and the heat release property can be improved.
填充材(D)可為有機填充材及無機填充材任一者,但以無機填充材為佳。作為較佳的無機填充材,可列舉,例如,氧化矽、氧化鋁、滑石、碳酸鈣、鈦白、紅丹、碳化矽、氮化硼等粉末;將此等無機填充材加以球形化的珠粒;此等無機填充材的表面改質品;此等無機填充材的單結晶纖維;玻璃纖維等。
此等當中,無機填充材以氧化矽或氧化鋁為佳。The filler (D) may be either an organic filler or an inorganic filler, but an inorganic filler is preferred. Preferred inorganic fillers include, for example, powders such as silicon oxide, alumina, talc, calcium carbonate, titanium white, red lead, silicon carbide, and boron nitride; beads in which these inorganic fillers are spherical Particles; surface modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, etc.
Among these, the inorganic filler is preferably silicon oxide or aluminum oxide.
樹脂層形成用組合物及熱硬化性樹脂膜所含有的填充材(D)可僅為1種,亦可為2種以上。當填充材(D)為2種以上時,可任意地選擇此等地組合及比率。The filler (D) contained in the composition for forming a resin layer and the thermosetting resin film may be only one kind, or two or more kinds. When there are two or more fillers (D), these combinations and ratios can be arbitrarily selected.
填充材(D)的平均粒徑,以1μm以下為佳,以0.5μm以下為更佳,以0.1μm以下為特佳。藉由填充材(D)的平均粒徑為上述上限值以下,硬化前的熱硬化性樹脂膜以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值變得易於調整為500Pa‧s以上,當將熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,抑制半導體晶圓的表面的收縮的效果變得更加提高。
此外,在凸塊的頭頂部,抑制第一保護膜殘留物的殘留的效果變得更加提高。
且,在本說明書中,所謂「平均粒徑」,若無特別說明,是指藉由雷射繞射散射法所求的粒度分佈曲線中,在累積值50%時的粒徑(D50
)的值。The average particle diameter of the filler (D) is preferably 1 μm or less, more preferably 0.5 μm or less, and particularly preferably 0.1 μm or less. When the average particle diameter of the filler (D) is equal to or lower than the above upper limit, the minimum value of the shear viscosity at 90°C to 130°C when the thermosetting resin film before curing is heated at 10°C/min It becomes easy to adjust to 500Pa‧s or more. When the thermosetting resin film is attached to the bumped surface of the semiconductor wafer to thermally cure it, the effect of suppressing the shrinkage of the surface of the semiconductor wafer becomes more enhanced .
In addition, at the top of the bump, the effect of suppressing the residue of the first protective film becomes more enhanced.
In addition, in this specification, the "average particle diameter", unless otherwise specified, refers to the particle diameter at a cumulative value of 50% (D 50 ) in the particle size distribution curve obtained by the laser diffraction scattering method Value.
填充材(D)的平均粒徑的下限值,並無特別限制。例如,填充材(D)的平均粒徑,從易於取得填充材(D)的觀點來看,以0.01μm以上為佳。
填充材(D)的平均粒徑,以0.01μm以、上1μm以下為佳,以0.01μm以上、0.5μm以下為更佳,以0.01μm以上、0.1μm以下為特佳。The lower limit of the average particle diameter of the filler (D) is not particularly limited. For example, the average particle diameter of the filler (D) is preferably 0.01 μm or more from the viewpoint of easy availability of the filler (D).
The average particle diameter of the filler (D) is preferably 0.01 μm or more and 1 μm or less, more preferably 0.01 μm or more and 0.5 μm or less, and particularly preferably 0.01 μm or more and 0.1 μm or less.
當有使用填充材(D)時,在樹脂層形成用組合物中,相對於溶媒以外的全部成分的總含量,填充材(D)的含量的比例(即,熱硬化性樹脂膜的填充材(D)的含量),以3~60質量%為佳,以3~55質量%為更佳。藉由填充材(D)的含量為此等範圍,硬化前的熱硬化性樹脂膜以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值變得易於調整為500Pa‧s以上,當將熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,可抑制半導體晶圓的表面的收縮。此外,在凸塊的頭頂部,抑制第一保護膜殘留物的殘留的效果更加提高的同時,上述熱膨脹係數的調整變得更加容易。When the filler (D) is used, in the composition for forming a resin layer, the ratio of the content of the filler (D) to the total content of all components other than the solvent (that is, the filler of the thermosetting resin film) (D) content), preferably 3 to 60% by mass, more preferably 3 to 55% by mass. With the content of the filler (D) in this range, when the thermosetting resin film before curing is heated at 10°C/min, the minimum shear viscosity at 90°C to 130°C becomes easy to adjust It is 500Pa‧s or more. When the thermosetting resin film is attached to the bumped surface of the semiconductor wafer and thermally cured, the shrinkage of the surface of the semiconductor wafer can be suppressed. In addition, at the top of the bump, the effect of suppressing the residue of the first protective film residue is further improved, and the adjustment of the above-described thermal expansion coefficient becomes easier.
[耦合劑(E)]
樹脂層形成用組合物及熱硬化性樹脂膜亦可含有耦合劑(E)。作為耦合劑(E),藉由使用具有可與無機化合物或有機化合物反應的官能基者,可提升熱硬化性樹脂膜對於被附著體的接著性及密著性。此外,藉由使用耦合劑(E),將熱硬化性樹脂膜硬化所得的第一保護膜,不會損及耐熱性,且可提升耐水性。[Coupling agent (E)]
The composition for forming a resin layer and the thermosetting resin film may contain a coupling agent (E). As the coupling agent (E), by using a functional group that can react with an inorganic compound or an organic compound, the adhesion and adhesion of the thermosetting resin film to the adherend can be improved. In addition, by using the coupling agent (E), the first protective film obtained by curing the thermosetting resin film does not impair heat resistance and can improve water resistance.
耦合劑(E),以具有可與聚合物成分(A)、熱硬化性成分(B)等具有的官能基反應的官能基的化合物為佳,以矽烷耦合劑為更佳。
作為較佳的上述矽烷耦合劑,可列舉,例如,3-縮水甘油基氧基丙基三甲氧基矽烷、3-縮水甘油基氧基丙基甲基二乙氧基矽烷、3-縮水甘油基氧基丙基三乙氧基矽烷、3-縮水甘油基氧基甲基二乙氧基矽烷、2-(3,4-環氧基環己基)乙基三甲氧基矽烷、3-甲基丙烯醯基氧基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-(2-胺基乙基胺基)丙基三甲氧基矽烷、3-(2-胺基乙基胺基)丙基甲基二乙氧基矽烷、3-(苯基胺基)丙基三甲氧基矽烷、3-苯胺基丙基三甲氧基矽烷、3-脲基丙基三乙氧基矽烷、3-巰基丙基三甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、雙(3-三乙氧基矽烷基丙基)四硫化物、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、咪唑矽烷等。The coupling agent (E) is preferably a compound having a functional group that can react with a functional group possessed by the polymer component (A), thermosetting component (B), etc., and more preferably a silane coupling agent.
Preferred examples of the silane coupling agent include, for example, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyl diethoxysilane, and 3-glycidyl. Oxypropyltriethoxysilane, 3-glycidoxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methylpropene Acyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3-(2-aminoethyl Amino)propylmethyl diethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane , 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl) tetrasulfide, methyltrimethoxysilane, methyl Triethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, imidazole silane, etc.
樹脂層形成用組合物及熱硬化性樹脂膜所含有的耦合劑(E),可僅為1種,亦可為2種以上。當耦合劑(E)為2種以上時,可任意地選擇此等地組合及比率。The coupling agent (E) contained in the composition for forming a resin layer and the thermosetting resin film may be only one kind or two or more kinds. When the coupling agent (E) is two or more types, these combinations and ratios can be arbitrarily selected.
當有使用耦合劑(E)時,在樹脂層形成用組合物及熱硬化性樹脂膜中,耦合劑(E)的含量,相對於聚合物成分(A)及熱硬化性成分(B)的總含量100質量份,以0.03~20質量份為佳,以0.05~10質量份為更佳,以0.1~5質量份為特佳。
藉由耦合劑(E)的上述含量為上述下限值以上,填充材(D)對樹脂的分散性的提升、熱硬化性樹脂膜與被附著體的接著性的提升等等,使用耦合劑(E)所達成的效果更加顯著。此外,藉由耦合劑(E)的上述含量為上述上限值以下,釋氣的發生更受到抑制。When the coupling agent (E) is used, the content of the coupling agent (E) in the composition for forming a resin layer and the thermosetting resin film is different from that of the polymer component (A) and the thermosetting component (B) The total content is 100 parts by mass, preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass.
When the content of the coupling agent (E) is more than the above lower limit, the dispersibility of the filler (D) to the resin is improved, the adhesion between the thermosetting resin film and the adherend is improved, etc., the coupling agent is used (E) The effect achieved is more significant. In addition, when the content of the coupling agent (E) is equal to or less than the above upper limit value, the occurrence of outgassing is further suppressed.
[交聯劑(F)]
作為聚合物成分(A),當使用上述丙烯酸系樹脂等的具有可與其他化合物鍵結的乙烯基、(甲基)丙烯醯基、胺基、羥基、羧基、異氰酸酯基等官能基者時,樹脂層形成用組合物及熱硬化性樹脂膜亦可含有交聯劑(F)。交聯劑(F)是用以使聚合物成分(A)中的上述官能基與其他化合物鍵結並交聯的成分,藉由此類交聯,可調節熱硬化性樹脂膜的初期接著力及凝集力。[Crosslinking agent (F)]
As the polymer component (A), when the acrylic resin and the like having functional groups such as vinyl groups, (meth)acryloyl groups, amine groups, hydroxyl groups, carboxyl groups, and isocyanate groups that can be bonded to other compounds are used, The composition for forming a resin layer and the thermosetting resin film may contain a crosslinking agent (F). The crosslinking agent (F) is a component for bonding and crosslinking the above functional groups in the polymer component (A) with other compounds, and by such crosslinking, the initial adhesion of the thermosetting resin film can be adjusted And cohesion.
作為交聯劑(F),可列舉,例如,有機多價異氰酸酯化合物、多價亞胺化合物、金屬螯合系交聯劑(具有金屬螯合構造的交聯劑)、氮丙啶系交聯劑(具有氮丙啶基的交聯劑)等。Examples of the crosslinking agent (F) include organic polyvalent isocyanate compounds, polyvalent imine compounds, metal chelate crosslinkers (crosslinkers with metal chelate structure), and aziridine crosslinkers. Agent (crosslinking agent with aziridine group), etc.
作為上述有機多價異氰酸酯化合物,可列舉,例如,芳香族多價異氰酸酯化合物、脂肪族多價異氰酸酯化合物及脂環族多價異氰酸酯化合物(以下,有時將此等化合物統稱為「芳香族多價異氰酸酯化合物等」);上述芳香族多價異氰酸酯化合物等的三聚物、異氰尿酸酯及加成物;上述芳香族多價異氰酸酯化合物等與多元醇化合物反應而得的末端異氰酸酯胺基甲酸乙酯聚合物等。上述「加成物」,是指上述芳香族多價異氰酸酯化合物、脂肪族多價異氰酸酯化合物或脂環族多價異氰酸酯化合物與乙二醇、丙二醇、新戊二醇、三羥甲基丙烷或蓖麻油等的低分子量含活性氫的化合物的反應產物。作為上述加成物的舉例,可列舉如下述的三羥甲基丙烷的伸苯二甲基二異氰酸酯加成物等。此外,所謂「末端異氰酸酯胺基甲酸乙酯聚合物」,如先前所說明。Examples of the organic polyvalent isocyanate compound include, for example, aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, and alicyclic polyvalent isocyanate compounds (hereinafter, these compounds are sometimes collectively referred to as "aromatic polyvalent Isocyanate compounds, etc."); terpolymers, isocyanurates and adducts of the above-mentioned aromatic polyvalent isocyanate compounds, etc.; terminal isocyanate urethanes obtained by reaction of the above-mentioned aromatic polyvalent isocyanate compounds with polyol compounds Ethyl polymer, etc. The above-mentioned "adduct" means the above-mentioned aromatic polyvalent isocyanate compound, aliphatic polyvalent isocyanate compound or alicyclic polyvalent isocyanate compound and ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane or castor Reaction products of low molecular weight active hydrogen-containing compounds such as sesame oil. Examples of the above-mentioned adducts include the following xylylene diisocyanate adducts of trimethylolpropane and the like. In addition, the so-called "terminal isocyanate urethane polymer" is as previously explained.
作為上述有機多價異氰酸酯化合物,更具體而言,可列舉,例如,2,4-甲苯二異氰酸酯;2,6-甲苯二異氰酸酯;1,3-伸苯二甲基二異氰酸酯;1,4-伸苯二甲基二異氰酸酯;二苯基甲烷-4,4’-二異氰酸酯;二苯基甲烷-2,4’-二異氰酸酯;3-甲基二苯基甲烷二異氰酸酯;六亞甲基二異氰酸酯;異佛爾酮二異氰酸酯;二環己基甲烷-4,4’-二異氰酸酯;二環己基甲烷-2,4’-二異氰酸酯;於三羥甲基丙烷等多元醇的全部或一部分的羥基,加成1種或2種以上甲苯二異氰酸酯、六亞甲基二異氰酸酯及伸苯二甲基二異氰酸酯的任一者的化合物;離胺酸二異氰酸酯等。As the organic polyvalent isocyanate compound, more specifically, for example, 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 1,3-xylylene diisocyanate; 1,4- Xylylene diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene di Isocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; all or part of the hydroxyl groups in polyhydric alcohols such as trimethylolpropane , Add one or more than two kinds of toluene diisocyanate, hexamethylene diisocyanate and any one of the compounds of xylylene diisocyanate; diamine diisocyanate and so on.
作為上述多價亞胺化合物,可列舉,例如,N,N’-二苯基甲烷-4,4’-雙(1-氮丙啶羧醯胺)、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、四羥甲基甲烷-三-β-氮丙啶基丙酸酯、N,N’-甲苯-2,4-雙(1-氮丙啶羧醯胺)三伸乙基三聚氰胺等。Examples of the polyvalent imine compound include N,N′-diphenylmethane-4,4′-bis(1-aziridinecarboxamide) and trimethylolpropane-tri-β- Aziridine propionate, tetramethylolmethane-tri-β-aziridine propionate, N,N'-toluene-2,4-bis(1-aziridinecarboxamide) tris Ethyl melamine and so on.
使用有機多價異氰酸酯化合物作為交聯劑(F)時,作為聚合物成分(A),以使用含有羥基的聚合物為佳。當交聯劑(F)具有異氰酸酯基,聚合物成分(A)具有羥基時,藉由交聯劑(F)與聚合物成分(A)的反應,可簡單地於熱硬化性樹脂膜導入交聯構造。When an organic polyvalent isocyanate compound is used as the crosslinking agent (F), it is preferred to use a polymer containing a hydroxyl group as the polymer component (A). When the cross-linking agent (F) has an isocyanate group and the polymer component (A) has a hydroxyl group, the cross-linking agent (F) and the polymer component (A) can be easily introduced into the thermosetting resin film through the reaction联结构。 Joint construction.
樹脂層形成用組合物及熱硬化性樹脂膜所含有的交聯劑(F),可僅為1種,亦可為2種以上。當交聯劑(F)為2種以上時,可任意地選擇此等的組合及比率。The crosslinking agent (F) contained in the composition for forming a resin layer and the thermosetting resin film may be only one kind or two or more kinds. When there are two or more crosslinking agents (F), these combinations and ratios can be arbitrarily selected.
當使用交聯劑(F)時,在樹脂層形成用組合物中,交聯劑(F)的含量相對於聚合物成分(A)的含量100質量份,以0.01~20質量份為佳,以0.1~10質量份為更佳,以0.5~5質量份為特佳。藉由交聯劑(F)的上述含量為上述下限值以上,使用交聯劑(F)所達成的效果變得更加顯著。此外,藉由交聯劑(F)的上述含量為上述上限值以下,可抑制交聯劑(F)的過剩使用。When a crosslinking agent (F) is used, in the composition for forming a resin layer, the content of the crosslinking agent (F) relative to the content of the polymer component (A) is 100 parts by mass, preferably 0.01 to 20 parts by mass, It is more preferably 0.1 to 10 parts by mass, and particularly preferably 0.5 to 5 parts by mass. When the above-mentioned content of the cross-linking agent (F) is at least the above-mentioned lower limit, the effect achieved by using the cross-linking agent (F) becomes more remarkable. In addition, when the content of the crosslinking agent (F) is equal to or less than the above upper limit, the excessive use of the crosslinking agent (F) can be suppressed.
[其他成分]
樹脂層形成用組合物及熱硬化性樹脂膜,在無損本發明效果的範圍內,亦可含有上述聚合物成分(A)、熱硬化性成分(B)、硬化促進劑(C)、填充材(D)、耦合劑(E)及交聯劑(F)以外的其他成分。
作為上述其他成分,可列舉,例如,能量線硬化性樹脂、光聚合起始劑、著色劑、泛用添加劑等。上述泛用添加劑可為習知者,對應目的可任意選擇,並無特別限定,但作為較佳者,可列舉,例如,塑化劑、抗靜電劑、抗氧化劑、著色劑(染料、顏料)、吸除劑(gettering agent)等。[Other ingredients]
The composition for forming a resin layer and the thermosetting resin film may contain the above-mentioned polymer component (A), thermosetting component (B), curing accelerator (C), and filler as long as the effect of the present invention is not impaired (D), other components than the coupling agent (E) and the crosslinking agent (F).
Examples of the other components mentioned above include energy ray-curable resins, photopolymerization initiators, colorants, and general-purpose additives. The above-mentioned general-purpose additives may be conventional ones, and can be arbitrarily selected according to the purpose, and are not particularly limited, but preferred ones include, for example, plasticizers, antistatic agents, antioxidants, colorants (dye, pigment) , Gettering agent, etc.
樹脂層形成用組合物及熱硬化性樹脂膜所含有的上述其他成分,可僅為1種,亦可為2種以上。當上述其他成分為2種以上時,可任意地選擇此等的組合及比率。
樹脂層形成用組合物及熱硬化性樹脂膜的上述其他成分的含量並無特別限定,對應目的適當選擇即可。The other components contained in the composition for forming a resin layer and the thermosetting resin film may be only one kind or two or more kinds. When the above-mentioned other components are two or more types, these combinations and ratios can be arbitrarily selected.
The contents of the other components of the composition for forming a resin layer and the thermosetting resin film are not particularly limited, and may be appropriately selected according to the purpose.
樹脂層形成用組合物及熱硬化性樹脂膜,以含有聚合物成分(A)及熱硬化性成分(B),且含有聚乙烯縮醛作為聚合物成分(A),以及含有液狀者作為環氧樹脂(B1)為佳,此等成分以外,以進一步含有硬化促進劑(C)及填充材(D)者為更佳。然後,此時的填充材(D),以具有上述的平均粒徑為佳。藉由使用如此的樹脂層形成用組合物及熱硬化性樹脂膜,硬化前的熱硬化性樹脂膜以10℃/min使其升溫時,在90~130℃時的剪切黏度的最小值變得易於調整為500Pa‧s以上,當將熱硬化性樹脂膜貼附在半導體晶圓的具有凸塊的表面,使其熱硬化時,可抑制半導體晶圓的表面的收縮。此外,在凸塊的頭頂部,抑制第一保護膜殘留物的殘留的效果變得更加提高。The composition for forming a resin layer and the thermosetting resin film include a polymer component (A) and a thermosetting component (B), and a polyvinyl acetal as the polymer component (A), and a liquid The epoxy resin (B1) is preferred, and in addition to these components, those further containing a hardening accelerator (C) and a filler (D) are more preferred. Then, the filler (D) at this time preferably has the above-mentioned average particle diameter. By using such a composition for forming a resin layer and a thermosetting resin film, when the thermosetting resin film before curing is heated at 10°C/min, the minimum value of the shear viscosity at 90 to 130°C becomes It is easy to adjust to 500Pa‧s or more. When the thermosetting resin film is attached to the bumped surface of the semiconductor wafer to thermally cure it, the shrinkage of the surface of the semiconductor wafer can be suppressed. In addition, at the top of the bump, the effect of suppressing the residue of the first protective film becomes more enhanced.
樹脂層形成用組合物及熱硬化性樹脂膜,以含有選自聚乙烯縮甲醛、聚乙烯縮丁醛及丙烯酸系樹脂的1種以上作為聚合物成分(A),且含有選自液狀的二環戊二烯型環氧樹脂及液狀的雙酚A型環氧樹脂的1種以上作為環氧樹脂(B1)者為佳,此等成分以外,以進一步含有選自2-苯基-4-甲基咪唑及2-苯基-4,5-二羥甲基咪唑的1種以上作為硬化促進劑(C),並且含有選自氧化矽及氧化鋁的1種以上作為填充材(D)者為更佳。The composition for forming a resin layer and the thermosetting resin film contain one or more kinds selected from polyvinyl formal, polyvinyl butyral, and acrylic resin as the polymer component (A), and a liquid One or more types of dicyclopentadiene-type epoxy resin and liquid bisphenol A-type epoxy resin are preferred as the epoxy resin (B1). In addition to these components, further selected from 2-phenyl- One or more types of 4-methylimidazole and 2-phenyl-4,5-dihydroxymethylimidazole are used as hardening accelerators (C), and one or more types selected from silica and alumina are used as fillers (D ) Is better.
[溶媒]
樹脂層形成用組合物,以進一步含有溶媒為佳。含有溶媒的樹脂層形成用組合物,其操作性變得良好。
上述溶媒並無特別限定,但作為較佳者,可列舉,例如,甲苯、二甲苯等的烴;甲醇、乙醇、2-丙醇、異丁醇(亦稱為2-甲基丙烷-1-醇)、1-丁醇等的醇;乙酸乙酯等的酯;丙酮、丁酮等的酮;四氫呋喃等的醚;二甲基甲醯胺、N-甲基吡咯酮等的醯胺(具有醯胺鍵的化合物)等。
樹脂層形成用組合物所含有的上述溶媒可僅為1種,亦可為2種以上。當上述溶媒為2種以上時,可任意地選擇此等的組合及比率。[Solvent]
It is preferable that the composition for forming a resin layer further contains a solvent. The solvent-containing composition for forming a resin layer has good handleability.
The above solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; methanol, ethanol, 2-propanol, and isobutanol (also known as 2-methylpropane-1- Alcohol), alcohol such as 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides such as dimethylformamide and N-methylpyrrolidone (with Amide bond compound) etc.
The above-mentioned solvent contained in the composition for forming a resin layer may be only one kind, or two or more kinds. When the above-mentioned solvents are two or more types, these combinations and ratios can be arbitrarily selected.
樹脂層形成用組合物所含有的溶媒,從樹脂層形成用組合物中的含有成分可更均勻地混合的觀點來看,以丁酮等為佳。The solvent contained in the composition for forming a resin layer is preferably methyl ethyl ketone or the like from the viewpoint that the components contained in the composition for forming a resin layer can be more uniformly mixed.
樹脂層形成用組合物的溶媒的含量並無特別限定,例如對應溶媒以外的成分的種類適當選擇即可。The content of the solvent in the composition for forming a resin layer is not particularly limited. For example, it may be appropriately selected according to the type of components other than the solvent.
<<熱硬化性樹脂膜形成用組合物的製造方法>>
樹脂層形成用組合物等的熱硬化性樹脂膜形成用組合物,可藉由將用以構成此等的各成分加以調配而獲得。
在調配各成分時,添加順序並無特別限定,亦可同時添加2種以上的成分。
當使用溶媒時,可將溶媒與溶媒以外的每一調配成分混合,此等調配成分預先稀釋後使用,或者亦可將溶媒以外的每一調配成分不預先稀釋,將溶媒與此等調配成分混合而使用。
調配時混合各成分的方法並無特別限定,從使攪拌子或攪拌翼等旋轉而混合的方法;使用混合機而混合的方法;施加超音波而混合的方法等習知的方法當中適當選擇即可。
各成分的添加及混合時的溫度以及時間,只要不會讓各調配成分劣化,則無特別限定,適當調節即可,但溫度以15~30℃為佳。<<Method for manufacturing composition for forming thermosetting resin film>>
The composition for thermosetting resin film formation, such as the composition for resin layer formation, can be obtained by mixing each component which comprises these.
When mixing each component, the order of addition is not particularly limited, and two or more components may be added simultaneously.
When a solvent is used, the solvent may be mixed with each formulation component other than the solvent, and these formulation components may be used after being diluted in advance, or each formulation component other than the solvent may not be diluted in advance, and the solvent may be mixed with these formulation components And use.
The method of mixing the components at the time of preparation is not particularly limited, and it can be appropriately selected from known methods such as a method of rotating and mixing a stirrer or a stirring blade, a method of mixing using a mixer, and a method of mixing by applying ultrasonic waves. can.
The temperature and time at the time of addition and mixing of each component are not particularly limited as long as they do not deteriorate each formulated component, and may be adjusted appropriately, but the temperature is preferably 15 to 30°C.
◎第一支撐片材
第一保護膜形成用片材1中,作為第一支撐片材101,可使用習知者。例如,第一支撐片材101是具備第一基材11與形成在第一基材11上的緩衝層13而構成。換言之,第一保護膜形成用片材1是依照第一基材11、緩衝層13及熱硬化性樹脂膜12的順序,在此等的厚度方向予以積層而構成。◎ First Support Sheet In the sheet 1 for forming the first protective film, as the first support sheet 101, a conventional person can be used. For example, the first support sheet 101 includes the first base material 11 and the buffer layer 13 formed on the first base material 11. In other words, the first protective film forming sheet 1 is formed by stacking in the thickness direction of the first base material 11, the buffer layer 13 and the thermosetting resin film 12 in this order.
◎第一基材
第一基材為片材狀或膜狀,作為其構成材料,可列舉,例如,各種樹脂。
作為上述樹脂,可列舉,例如,低密度聚乙烯(LDPE)、直鏈低密度聚乙烯(LLDPE)、高密度聚乙烯(HDPE)等的聚乙烯;聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯、降莰烯樹脂等的聚乙烯以外的聚烯烴;乙烯-乙酸乙烯酯共聚合物、乙烯-(甲基)丙烯酸共聚合物、乙烯-(甲基)丙烯酸酯共聚合物、乙烯-降莰烯共聚合物等的乙烯系共聚合物(使用乙烯作為單體所獲得的共聚合物);聚氯乙烯、氯乙烯共聚合物等的氯乙烯系樹脂(使用氯乙烯作為單體所獲得的樹脂);聚苯乙烯;聚環烯烴;聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚對苯二甲酸丁二醇酯、聚間苯二甲酸乙二醇酯、聚乙烯-2,6-萘二羧酸酯、全部的構成單元具有芳香族環式基的全芳香族聚酯等的聚酯;2種以上的上述聚酯的共聚合物;聚(甲基)丙烯酸酯;聚氨酯;聚氨酯丙烯酸酯;聚醯亞胺;聚醯胺;聚碳酸酯;氟樹脂;聚縮醛;改質聚苯醚;聚硫化苯;聚碸;聚醚酮等。
此外,作為上述樹脂,可列舉,例如,將上述聚酯與其等以外的樹脂的混合物等聚合物摻合物。上述聚酯與其等以外的樹脂的聚合物摻合物,較佳為聚酯以外的樹脂的量為較少量者。
此外,作為上述樹脂,亦可列舉,例如,目前為止所例示的上述樹脂的1種或2種以上進行交聯的交聯樹脂;使用目前為止所例示的上述樹脂的1種或2種以上的離子聚合物等的改質樹脂。◎ First base material The first base material is in the form of a sheet or a film, and its constituent materials include, for example, various resins.
Examples of the resins include polyethylenes such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and high-density polyethylene (HDPE); polypropylene, polybutene, and polybutadiene Polyolefins other than polyethylene such as polymethylpentene and norbornene resin; ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymerization Vinyl copolymers (copolymers obtained using ethylene as a monomer); vinyl chloride resins such as polyvinyl chloride, vinyl chloride copolymers (using vinyl chloride) Resin obtained as a monomer); polystyrene; polycycloolefin; polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyisophthalate Polyesters such as ethylene formate, polyethylene-2,6-naphthalene dicarboxylate, fully aromatic polyesters having aromatic ring groups in all constituent units; copolymerization of two or more of the above polyesters Poly(meth)acrylate; Polyurethane; Polyurethane acrylate; Polyimide; Polyamide; Polycarbonate; Fluorine resin; Polyacetal; Modified polyphenylene ether; Polysulfide benzene; Polysulfone; Poly Ether ketone, etc.
In addition, examples of the resin include a polymer blend such as a mixture of the polyester and resins other than the above. The polymer blend of the above-mentioned polyester and resins other than it is preferably a smaller amount of resins other than polyester.
In addition, as the above-mentioned resin, for example, a cross-linked resin in which one or more of the above-mentioned resins exemplified above are cross-linked; and one or more of the above-mentioned resins exemplified above are used. Modified resins such as ionic polymers.
構成第一基材的樹脂,可僅為1種,亦可為2種以上。當構成第一基材的樹脂為2種以上時,可任意地選擇此等的組合及比率。The resin constituting the first base material may be only one kind or two or more kinds. When the resin constituting the first base material is two or more types, these combinations and ratios can be arbitrarily selected.
第一基材可僅為1層(單層),亦可為2層以上的複數層。當第一基材為複數層時,此等複數層可彼此相同亦可相異,此等複數層的組合並無特別限定。
且,在本說明書中,不僅只有第一基材,所謂「複數層彼此可相同亦可相異」,是指「可以是全部的層相同,亦可是全部的層相異,亦可僅一部分的層相同」。再者,所謂「複數層彼此相異」,是指「各層的構成材料及厚度的至少一者彼此相異」。The first substrate may be only one layer (single layer), or plural layers of more than two layers. When the first substrate is a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.
Moreover, in this specification, not only the first substrate, the so-called "multiple layers may be the same or different from each other" means "may be all the layers are the same, or all the layers are different, or only a part of Same level". Furthermore, "the plural layers are different from each other" means that "at least one of the constituent materials and thickness of each layer is different from each other".
第一基材的厚度,以5~1000μm為佳,以10~500μm為更佳,以15~300μm為進一步更佳,以20~150μm為特佳。
在此,所謂「第一基材的厚度」,是指第一基材全體的厚度,例如,由複數層而構成的第一基材的厚度,是指構成第一基材的全部的層的合計厚度。The thickness of the first substrate is preferably 5 to 1000 μm, more preferably 10 to 500 μm, further preferably 15 to 300 μm, and particularly preferably 20 to 150 μm.
Here, the "thickness of the first substrate" refers to the thickness of the entire first substrate, for example, the thickness of the first substrate composed of a plurality of layers refers to the thickness of all the layers constituting the first substrate Total thickness.
第一基材,以厚度的精度高者為佳,亦即,以不論在任何部位的厚度的偏差受到抑制者為佳。上述構成材料當中,作為構成此類厚度精度高的第一基材可使用的材料,可列舉,例如,聚乙烯、聚乙烯以外的聚烯烴、聚對苯二甲酸乙二醇酯、乙烯-乙酸乙烯酯共聚合物等。The first base material is preferably the one with high thickness accuracy, that is, the one where the variation in the thickness of any part is suppressed. Among the above-mentioned constituent materials, examples of materials that can be used to constitute such a first substrate with high thickness accuracy include, for example, polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, and ethylene-acetic acid. Vinyl ester copolymer, etc.
除了上述樹脂等的主要構成材料以外,第一基材亦可含有填充材、著色劑、抗靜電劑、抗氧化劑、有機潤滑劑、觸媒、軟化劑(亦稱為塑化劑)等習知的各種添加劑。In addition to the main constituent materials such as the above resins, the first base material may also contain conventional materials such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (also known as plasticizers). Of various additives.
第一基材可為透明,亦可為不透明,亦可對應目的而使其著色,亦可蒸鍍有其他層。
當上述熱硬化性樹脂膜為能量線硬化性時,第一基材,以能量線能夠穿透者為佳。The first substrate may be transparent or opaque, it may be colored according to the purpose, and other layers may be vapor-deposited.
When the thermosetting resin film is energy ray-curable, the first substrate is preferably one that can penetrate energy ray.
第一基材可藉由習知的方法製造。例如,含有樹脂的第一基材,可藉由將含有上述樹脂的樹脂組合物成形而製造。The first substrate can be manufactured by a conventional method. For example, the resin-containing first substrate can be manufactured by molding the resin composition containing the resin.
◎剝離膜
上述剝離膜可為在該領域中習知者。
作為較佳的上述剝離膜,可列舉,例如,聚對苯二甲酸乙二醇酯等的樹脂製膜的至少一側的表面藉由矽酮處理等施行剝離處理而成者;膜的至少一側的表面成為以聚烯烴所構成的剝離面者等。
剝離膜的厚度,以與第一基材的厚度相同為佳。◎ Peeling film The peeling film mentioned above may be known in this field.
Examples of the above-mentioned peeling film include, for example, those on which at least one surface of a resin film such as polyethylene terephthalate is subjected to peeling treatment by silicone treatment or the like; at least one of the films The surface on the side becomes a peeling surface made of polyolefin or the like.
The thickness of the release film is preferably the same as the thickness of the first substrate.
◎緩衝層
緩衝層13,對於施加在緩衝層13及與其相鄰的層的力具有緩衝作用。在本實施形態,顯示熱硬化性樹脂膜12作為「與緩衝層相鄰的層」。◎Buffer layer The buffer layer 13 has a buffering effect on the force applied to the buffer layer 13 and the layer adjacent thereto. In this embodiment, the thermosetting resin film 12 is shown as a "layer adjacent to the buffer layer".
緩衝層13為片材狀或膜狀,以能量線硬化性為佳。能量線硬化性的緩衝層13,藉由能量線使其硬化,可使從下述熱硬化性樹脂膜12的剝離變得更容易。The buffer layer 13 is in the form of a sheet or a film, and preferably has energy beam curability. The energy ray-curable buffer layer 13 is cured by the energy ray, which makes it easier to peel from the thermosetting resin film 12 described below.
作為緩衝層13的構成材料,可列舉,例如,各種黏著性樹脂。作為上述黏著性樹脂,可列舉,例如,丙烯酸系樹脂、胺基甲酸乙酯系樹脂、橡膠系樹脂、矽酮系樹脂、環氧系樹脂、聚乙烯醚、聚碳酸酯等的黏著性樹脂,以丙烯酸系樹脂為佳。當緩衝層13為能量線硬化性時,作為其構成材料,可列舉在能量線硬化中必要的各種成分。Examples of the constituent material of the buffer layer 13 include various adhesive resins. Examples of the adhesive resin include acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ether, and polycarbonate. Acrylic resin is preferred. When the buffer layer 13 is energy ray hardenable, as its constituent material, various components necessary for energy ray hardening can be cited.
且,在本發明中,所謂「黏著性樹脂」,包括具有黏著性的樹脂與具有接著性的樹脂兩者的概念,例如,不只是樹脂本身具有黏著性者,亦包括藉由與添加劑等其他成分的併用而顯示黏著性的樹脂,或是藉由熱、水等觸發物的存在而顯示接著性的樹脂等。Moreover, in the present invention, the so-called "adhesive resin" includes the concept of both adhesive resin and adhesive resin, for example, not only the resin itself is adhesive, but also includes additives and other A resin that exhibits adhesion by the combined use of components, or a resin that exhibits adhesion by the presence of triggers such as heat and water.
緩衝層13可為僅1層(單層),亦可為2層以上的複數層。當緩衝層13為複數層時,此等複數層可彼此相同亦可相異,此等複數層的組合並無特別限定。The buffer layer 13 may be only one layer (single layer), or plural layers of two or more layers. When the buffer layer 13 is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.
緩衝層13的厚度,以30~500μm為佳。
在此,所謂「緩衝層13的厚度」,是指緩衝層13全體的厚度,例如,由複數層而構成的緩衝層13的厚度,是指構成緩衝層13全部的層的合計厚度。The thickness of the buffer layer 13 is preferably 30 to 500 μm.
Here, the "thickness of the buffer layer 13" refers to the thickness of the entire buffer layer 13, for example, the thickness of the buffer layer 13 composed of a plurality of layers refers to the total thickness of the layers constituting the entire buffer layer 13.
<<黏著性樹脂組合物>>
緩衝層13,可使用含有黏著性樹脂的黏著性樹脂組合物而形成。例如,藉由在緩衝層13的形成對象面塗佈黏著性樹脂組合物,視需要而使其乾燥,可在目標的部位形成緩衝層13。<<Adhesive resin composition>>
The buffer layer 13 can be formed using an adhesive resin composition containing an adhesive resin. For example, by applying an adhesive resin composition on the surface to be formed of the buffer layer 13 and drying it as necessary, the buffer layer 13 can be formed on the target site.
黏著性樹脂組合物的塗佈,可藉由習知的方法進行,例如,可列舉使用空氣刀塗佈機、刮刀塗佈機、桿塗佈機、凹版印刷塗佈機、軋輥塗佈機、輥刀塗佈機、簾幕塗佈機、模具塗佈機、刀式塗佈機、網版塗佈機、梅耶桿塗佈機、吻合式塗佈機等各種塗佈機的方法。The application of the adhesive resin composition can be performed by a conventional method. For example, an air knife coater, a blade coater, a rod coater, a gravure coater, a roll coater, Roller coater, curtain coater, die coater, knife coater, screen coater, Mayer bar coater, stapling coater and other various coater methods.
黏著性樹脂組合物的乾燥條件,並無特別限定,但較佳為使下述含有溶媒的黏著性樹脂組合物加熱乾燥。例如,含有溶媒的黏著性樹脂組合物,以在70~130℃、10秒鐘~5分鐘的條件使其乾燥為佳。The drying conditions of the adhesive resin composition are not particularly limited, but it is preferable to heat-dry the adhesive resin composition containing a solvent described below. For example, the adhesive resin composition containing a solvent is preferably dried at 70 to 130° C. for 10 seconds to 5 minutes.
當緩衝層13為能量線硬化性時,作為含有能量線硬化性黏著劑的黏著性樹脂組合物,亦即,能量線硬化性的黏著性樹脂組合物,可列舉,例如,含有非能量線硬化性的黏著性樹脂(I-1a) (以下,簡稱為「黏著性樹脂(I-1a)」)及能量線硬化性化合物的黏著性樹脂組合物(I-1);含有在非能量線硬化性的黏著性樹脂(1-1a)的側鏈導入不飽和基的能量線硬化性的黏著性樹脂(I-2a) (以下,簡稱為「黏著性樹脂(I-2a)」)的黏著性樹脂組合物(I-2);含有上述黏著性樹脂(I-2a)及能量線硬化性低分子量化合物的黏著性樹脂組合物(I-3)等。When the buffer layer 13 is energy ray curable, the adhesive resin composition containing the energy ray curable adhesive, that is, the energy ray curable adhesive resin composition, for example, contains non-energy ray curable Adhesive resin composition (I-1a) (hereinafter, abbreviated as "adhesive resin (I-1a)") and an energy ray-curable compound (I-1); contained in non-energy ray-curable Adhesiveness of the energy-curable adhesive resin (I-2a) (hereinafter, abbreviated as "adhesive resin (I-2a)") in which the unsaturated resin is introduced into the side chain of the adhesive resin (1-1a) Resin composition (I-2); an adhesive resin composition (I-3) containing the above-mentioned adhesive resin (I-2a) and an energy ray-curable low molecular weight compound, etc.
作為黏著性樹脂組合物,除了能量線硬化性的黏著性樹脂組合物以外,亦可列舉非能量線硬化性的黏著性樹脂組合物。
作為非能量線硬化性的黏著性樹脂組合物,可列舉,例如,丙烯酸系樹脂、胺基甲酸乙酯系樹脂、橡膠系樹脂、矽酮系樹脂、環氧系樹脂、聚乙烯醚、聚碳酸酯、酯系樹脂等的含有非能量線硬化性的黏著性樹脂(I-1a)的黏著性樹脂組合物(I-4),以含有丙烯酸系樹脂者為佳。As the adhesive resin composition, in addition to the energy ray-curable adhesive resin composition, a non-energy ray-curable adhesive resin composition can also be mentioned.
Examples of the non-energy ray-curable adhesive resin composition include, for example, acrylic resin, urethane resin, rubber resin, silicone resin, epoxy resin, polyvinyl ether, and polycarbonate The adhesive resin composition (I-4) containing a non-energy ray-curable adhesive resin (I-1a), such as an ester or an ester-based resin, is preferably an acrylic resin.
<<黏著性樹脂組合物的製造方法>>
黏著性樹脂組合物(I-1)~(I-4)等的上述黏著性樹脂組合物,可藉由將上述黏著性樹脂與視需要之上述黏著性樹脂以外的成分等的用以構成黏著性樹脂組合物的各成分加以調配而獲得。
在調配各成分時,添加順序並無特別限制,亦可同時添加2種以上的成分。
當使用溶媒時,可將溶媒與溶媒以外的每一調配成分混合,此調配成分預先稀釋後使用,或者亦可將溶媒以外的每一調配成分不預先稀釋,將溶媒與此等調配成分混合而使用。
調配時混合各成分的方法並無特別限定,從使攪拌子或攪拌翼等旋轉而混合的方法;使用混合機而混合的方法;施加超音波而混合的方法等習知的方法當中適當選擇即可。
各成分的添加及混合時的溫度以及時間,只要不會讓各調配成分劣化,則無特別限,適當調節即可,但以溫度15~30℃為佳。<<Method for producing adhesive resin composition>>
The above-mentioned adhesive resin composition such as the adhesive resin compositions (I-1) to (I-4) can be formed by combining the above-mentioned adhesive resin with components other than the above-mentioned adhesive resin as necessary Each component of the sexual resin composition is obtained by mixing.
When mixing each component, the order of addition is not particularly limited, and two or more components may be added simultaneously.
When a solvent is used, the solvent may be mixed with each formulation component other than the solvent, and the formulation component may be used after dilution in advance, or each formulation component other than the solvent may not be diluted in advance, and the solvent may be mixed with these formulation components. use.
The method of mixing the components at the time of preparation is not particularly limited, and it is appropriately selected from conventional methods such as a method of rotating and mixing a stirrer or a stirring wing, a method of mixing using a mixer, and a method of mixing by applying ultrasonic waves. can.
The temperature and time at the time of addition and mixing of the components are not particularly limited as long as they do not deteriorate the formulated components, and may be adjusted appropriately, but the temperature is preferably 15 to 30°C.
◇第一保護膜形成用片材的製造方法
上述第一保護膜形成用片材,可藉由成為對應上述各層的位置關係的方式依序積層而製造。各層的形成方法如先前所說明。◇Manufacturing method of the first protective film forming sheet The first protective film forming sheet can be manufactured by layering sequentially so as to correspond to the positional relationship of the above layers. The formation method of each layer is as previously explained.
例如,在第一基材上將緩衝層及熱硬化性樹脂膜依此順序,在此等的厚度方向積層而成的第一保護膜形成用片材,可藉由以下所示的方法而製造。亦即,對於第一基材,藉由將緩衝層形成用的黏著性樹脂組合物擠出成形,於第一基材上積層緩衝層。此外,藉由在剝離膜的剝離處理面上,塗佈上述熱硬化性樹脂膜形成用組合物,視需要而使其乾燥,藉此積層熱硬化性樹脂膜。然後,將此剝離膜上的熱硬化性樹脂膜與第一基材上的緩衝層貼合,藉此可獲得在第一基材上將緩衝層、熱硬化性樹脂膜及剝離膜依此順序積層而成的第一保護膜形成用片材。剝離膜在使用第一保護膜形成用片材時予以去除即可。For example, a sheet for forming a first protective film formed by stacking a buffer layer and a thermosetting resin film in this order on the first base material in this thickness direction can be manufactured by the method shown below . That is, for the first base material, the buffer layer is laminated on the first base material by extrusion molding the adhesive resin composition for forming the buffer layer. In addition, by applying the composition for forming a thermosetting resin film on the peeling treatment surface of the peeling film, and drying it as necessary, the thermosetting resin film is laminated. Then, the thermosetting resin film on the release film is bonded to the buffer layer on the first substrate, whereby the buffer layer, the thermosetting resin film and the release film can be obtained on the first substrate in this order The layered sheet for forming the first protective film. The release film may be removed when the first protective film forming sheet is used.
具備上述各層以外的其他層的第一保護膜形成用片材,可藉由在上述的製造方法中,以使上述其他層的積層位置成為適當位置的方式,適當追加上述其他層的形成步驟及積層步驟的任一者或兩者而製造。The sheet for forming a first protective film provided with layers other than the above-mentioned layers can be appropriately added with the forming steps of the above-mentioned other layers in the above-mentioned manufacturing method so that the lamination position of the above-mentioned other layers becomes an appropriate position It is manufactured by either or both of the lamination steps.
例如,在第一基材上將密著層、緩衝層及熱硬化性樹脂膜依此順序,在此等的厚度方向積層而成的第一保護膜形成用片材,可藉由以下所示的方法而製造。亦即,對於第一基材,藉由將密著層形成用組合物及緩衝層形成用的黏著性樹脂組合物共同擠出成形,在第一基材上將密著層及緩衝層依此順序積層。然後,以與上述相同的方法,另外在剝離膜上積層熱硬化性樹脂膜。接著,將此剝離膜上的熱硬化性樹脂膜與第一基材及密著層上的緩衝層貼合,藉此可獲得在第一基材上將密著層、緩衝層、熱硬化性樹脂膜及剝離膜依此順序積層而成的第一保護膜形成用片材。熱硬化性樹脂膜上的剝離膜在使用第一保護膜形成用片材時予以去除即可。For example, a sheet for forming a first protective film formed by stacking an adhesive layer, a buffer layer, and a thermosetting resin film in this order on the first base material in this thickness direction can be obtained as follows Method. That is, for the first base material, by co-extrusion molding the composition for forming an adhesive layer and the adhesive resin composition for forming a buffer layer, the adhesive layer and the buffer layer are formed on the first substrate Sequential stacking. Then, in the same manner as described above, a thermosetting resin film is additionally deposited on the release film. Next, the thermosetting resin film on this release film is bonded to the first substrate and the buffer layer on the adhesive layer, whereby the adhesive layer, the buffer layer, and the thermosetting property can be obtained on the first substrate The sheet for forming the first protective film formed by stacking the resin film and the release film in this order. The release film on the thermosetting resin film may be removed when the first protective film forming sheet is used.
◇第一保護膜形成用片材的使用方法
本發明的第一保護膜形成用片材,例如,可依以下的方式使用。
亦即,首先將第一保護膜形成用片材藉由其熱硬化性樹脂膜貼合於半導體晶圓的凸塊形成面。此時,藉由一邊將硬化性樹脂膜加熱一邊貼合,使熱硬化性樹脂膜軟化,因而使熱硬化性樹脂膜密著於凸塊形成面。
接著,視需要將與半導體晶圓的凸塊形成面相反側的面(亦即,背面)進行研削後,於此背面貼附用以保護此背面的保護膜形成用片材(在本說明書中,稱為「第二保護膜形成用片材」)。作為第二保護膜形成用片材,可列舉,例如,具備藉由硬化,形成用以保護半導體晶圓及半導體晶片的背面的第2保護膜的第2保護膜形成膜者,亦可為進一步具備晶圓切割片材而構成者。◇How to use the first protective film forming sheet The first protective film forming sheet of the present invention can be used in the following manner, for example.
That is, first, the sheet for forming the first protective film is bonded to the bump forming surface of the semiconductor wafer by its thermosetting resin film. At this time, by bonding while heating the curable resin film, the thermosetting resin film is softened, so that the thermosetting resin film adheres to the bump forming surface.
Next, after grinding the surface opposite to the bump forming surface of the semiconductor wafer (that is, the back surface) as needed, a sheet for forming a protective film for protecting the back surface is attached to this back surface (in this specification) , Called "the second protective film forming sheet"). Examples of the second protective film-forming sheet include, for example, those provided with a second protective film-forming film that forms a second protective film for protecting the semiconductor wafer and the back surface of the semiconductor wafer by curing, or may be further Those who have wafer dicing sheets.
接著,貼合於半導體晶圓的凸塊形成面的第一保護膜形成用片材當中,僅有熱硬化性樹脂膜留在凸塊形成面,使其他層從熱硬化化性樹脂膜剝離。在此,所謂「被剝離的其他層」,例如,以圖1所示的第一保護膜形成用片材1而言,是指第一基材11及緩衝層13。
接著,藉由使熱硬化性樹脂膜硬化,在半導體晶圓的凸塊形成面形成第一保護膜。Next, of the first protective film forming sheet bonded to the bump forming surface of the semiconductor wafer, only the thermosetting resin film remains on the bump forming surface, and the other layers are peeled from the thermosetting resin film. Here, the “other peeled layer” refers to, for example, the first protective film forming sheet 1 shown in FIG. 1, the first base material 11 and the buffer layer 13.
Next, by curing the thermosetting resin film, a first protective film is formed on the bump forming surface of the semiconductor wafer.
以下,可藉由與過去相同的方法,進行至半導體裝置的製造為止。亦即,將具備第一保護膜的狀態的半導體晶圓進行晶圓切割,形成半導體晶片,拾取具備第一保護膜的狀態的半導體晶片。第2保護膜形成膜,可對應其種類以適當的時間使其硬化,而形成第2保護膜。將所拾取的半導體晶片覆晶安裝於配線基板,最終構成半導體裝置。In the following, it is possible to proceed until the manufacture of the semiconductor device by the same method as in the past. That is, the semiconductor wafer provided with the first protective film is diced to form a semiconductor wafer, and the semiconductor wafer provided with the first protective film is picked up. The second protective film forming film can be cured at an appropriate time according to its type to form the second protective film. The picked semiconductor wafer is flip-chip mounted on a wiring board, and finally constitutes a semiconductor device.
藉由使用本發明的第一保護膜形成用片材,在將此片材貼合於半導體晶圓的凸塊形成面的階段,至少凸塊的上部貫穿熱硬化性樹脂膜而突出,在凸塊上部的熱硬化性樹脂膜的殘留受到抑制。其結果,成為至少凸塊的上部貫穿第一保護膜而突出的狀態。將具備此種第1保護膜及凸塊的半導體晶片覆晶安裝在配線基板時,半導體晶片與配線基板的電性連接變得良好。
以下,關於從本發明的第一保護膜形成用片材貼合於半導體晶圓的凸塊形成面起,至形成第一保護膜為止的過程,一邊參照圖式一邊詳細說明。By using the first protective film forming sheet of the present invention, at the stage of bonding the sheet to the bump forming surface of the semiconductor wafer, at least the upper part of the bump protrudes through the thermosetting resin film, and The remaining of the thermosetting resin film on the upper part of the block is suppressed. As a result, at least the upper part of the bump penetrates the first protective film and protrudes. When a semiconductor wafer flip-chip provided with such a first protective film and bumps is mounted on a wiring board, the electrical connection between the semiconductor wafer and the wiring board becomes good.
Hereinafter, the process from the bonding of the first protective film forming sheet of the present invention to the bump forming surface of the semiconductor wafer to the formation of the first protective film will be described in detail with reference to the drawings.
圖2是例示圖1所示的第一保護膜形成用片材1的使用方法之一例的剖面圖。
使用第一保護膜形成用片材1時,首先,如圖2(a)所示,將第一保護膜形成用片材1以其熱硬化性樹脂膜12面對半導體晶圓9的凸塊形成面9a的方式進行配置。FIG. 2 is a cross-sectional view illustrating an example of a method of using the first protective film forming sheet 1 shown in FIG. 1.
When using the first protective film-forming sheet 1, first, as shown in FIG. 2( a ), the first protective film-forming sheet 1 faces the bumps of the semiconductor wafer 9 with its thermosetting resin film 12. Arranged so as to form the surface 9a.
凸塊91的高度,並無特別限定,但以120~300μm為佳,以150~270μm為更佳,以180~240μm為特佳。藉由凸塊91的高度為上述下限值以上,可更提升凸塊91的功能。此外,藉由凸塊91的高度為上述上限值以下,抑制在凸塊91上部的熱硬化性樹脂膜12的殘留的效果變得更加提高。
且,在本說明書中,所謂「凸塊的高度」,是指凸塊當中,由凸塊形成面起至存在於最高位置的部位的高度。The height of the bump 91 is not particularly limited, but it is preferably 120-300 μm, more preferably 150-270 μm, and particularly preferably 180-240 μm. When the height of the bump 91 is more than the above lower limit, the function of the bump 91 can be further improved. In addition, when the height of the bump 91 is equal to or less than the above upper limit value, the effect of suppressing the remaining of the thermosetting resin film 12 on the upper portion of the bump 91 is further improved.
In addition, in this specification, the "height of the bump" refers to the height from the bump formation surface to the portion existing at the highest position among the bumps.
凸塊91的寬度,並無特別限定,但以170~350μm為佳,以200~320μm為更佳,以230~290μm為特佳。藉由凸塊91的寬度為上述下限值以上,可更提升凸塊91的功能。此外,藉由凸塊91的高度為上述上限值以下,抑制在凸塊91上部的熱硬化性樹脂膜12的殘留的效果變得更加提高。
且,在本說明書中,所謂「凸塊的寬度」,是指當面對著凸塊形成面,從垂直方向朝下看凸塊而平視時,凸塊表面上相異2點間以直線連結所獲得的線段的最大值。The width of the bump 91 is not particularly limited, but it is preferably 170 to 350 μm, more preferably 200 to 320 μm, and particularly preferably 230 to 290 μm. When the width of the bump 91 is equal to or greater than the above lower limit, the function of the bump 91 can be further improved. In addition, when the height of the bump 91 is equal to or less than the above upper limit value, the effect of suppressing the remaining of the thermosetting resin film 12 on the upper portion of the bump 91 is further improved.
Moreover, in this specification, the "bump width" means that when facing the bump forming surface and looking down at the bump from the vertical direction and looking up, the two different points on the bump surface are in a straight line The maximum value of the line segment obtained by joining.
相鄰凸塊91間的距離,並無特別限定,但以250~800μm為佳,以300~600μm為更佳,以350~500μm為特佳。藉由上述距離為上述下限值以上,可更提升凸塊91的功能。此外,藉由上述距離為上述上限值以下,抑制在凸塊91上部的熱硬化性樹脂膜12的殘留的效果變得更加提高。
且,在本說明書中,所謂「相鄰凸塊間的距離」,是指相鄰凸塊彼此的表面間的距離的最小值。The distance between adjacent bumps 91 is not particularly limited, but it is preferably 250-800 μm, more preferably 300-600 μm, and particularly preferably 350-500 μm. By the distance being above the lower limit, the function of the bump 91 can be further improved. In addition, when the distance is equal to or less than the upper limit value, the effect of suppressing the remaining of the thermosetting resin film 12 on the upper portion of the bump 91 is further improved.
In addition, in this specification, the "distance between adjacent bumps" refers to the minimum value of the distance between the surfaces of adjacent bumps.
接著,使熱硬化性樹脂膜12接觸半導體晶圓9上的凸塊91,而將第一保護膜形成用片材1壓附於半導體晶圓9。如此一來,熱硬化性樹脂膜12的第一面12a依序貼壓在凸塊91的表面91a及半導體晶圓9的凸塊形成面9a。此時,藉由將熱硬化性樹脂膜12加熱,熱硬化性樹脂膜12軟化,而以覆蓋著凸塊91的方式在凸塊91間擴散,密著於凸塊形成面9a的同時,覆蓋著凸塊91的表面91a,特別是凸塊形成面9a的附近部位的表面91a,而將凸塊91包埋。
藉由上述,如圖2(b)所示,使第一保護膜形成用片材1的熱硬化性樹脂膜12貼合在半導體晶圓9的凸塊形成面9a。Next, the thermosetting resin film 12 is brought into contact with the bump 91 on the semiconductor wafer 9, and the first protective film forming sheet 1 is pressed onto the semiconductor wafer 9. In this way, the first surface 12 a of the thermosetting resin film 12 is sequentially pressed against the surface 91 a of the bump 91 and the bump forming surface 9 a of the semiconductor wafer 9. At this time, by heating the thermosetting resin film 12, the thermosetting resin film 12 is softened, and diffuses between the bumps 91 so as to cover the bumps 91, and adheres to the bump forming surface 9 a while covering The surface 91a of the bump 91, particularly the surface 91a in the vicinity of the bump forming surface 9a, is embedded in the bump 91.
As described above, as shown in FIG. 2( b ), the thermosetting resin film 12 of the first protective film forming sheet 1 is bonded to the bump forming surface 9 a of the semiconductor wafer 9.
如上所述,作為將第一保護膜形成用片材1貼壓在半導體晶圓9的方法,可適用將各種片材貼壓在對象物而貼附的習知的方法,可列舉,例如,使用層壓軋輥的方法等。As described above, as a method of pressing the first protective film-forming sheet 1 on the semiconductor wafer 9, a known method in which various sheets are pressed on the object and attached can be applied, and examples include, for example, The method of using a lamination roll, etc.
貼壓在半導體晶圓9時的第一保護膜形成用片材1的加熱溫度,只要是熱硬化性樹脂膜12的硬化完全不進行或是不會過度進行的程度的溫度即可,以80~100℃為佳,以85~95℃為更佳。The heating temperature of the sheet 1 for forming the first protective film when it is pressed against the semiconductor wafer 9 may be a temperature at which the curing of the thermosetting resin film 12 does not proceed at all or does not proceed excessively. ~100℃ is better, 85~95℃ is better.
將第一保護膜形成用片材1貼壓於半導體晶圓9時的壓力,並無特別限定,但以0.1~1.5MPa為佳,以0.3~1MPa為更佳。The pressure when the first protective film forming sheet 1 is pressed against the semiconductor wafer 9 is not particularly limited, but it is preferably 0.1 to 1.5 MPa, and more preferably 0.3 to 1 MPa.
如上所述,將第一保護膜形成用片材1貼壓半導體晶圓9時,第一保護膜形成用片材1中的熱硬化性樹脂膜12及緩衝層13受到來自凸塊91所施加的壓力,在初期,熱硬化性樹脂膜12的第一面12a及緩衝層13的第一面13a變形為凹狀。然後,在持續受到來自凸塊91所施加之壓力的熱硬化性樹脂膜12上發生破裂。最終,在熱硬化性樹脂膜12的第一面12a貼壓在半導體晶圓9的凸塊形成面9a的階段,成為凸塊91的上部910成為貫穿熱硬化性樹脂膜12而突出的狀態。且,在此最終階段,通常,凸塊91的上部910並未貫穿緩衝層13。這是因為緩衝層13對於來自凸塊91所施加的壓力,具有緩衝作用。As described above, when the first protective film forming sheet 1 is pressed against the semiconductor wafer 9, the thermosetting resin film 12 and the buffer layer 13 in the first protective film forming sheet 1 are applied from the bump 91 At the initial stage, the first surface 12a of the thermosetting resin film 12 and the first surface 13a of the buffer layer 13 are deformed into a concave shape. Then, cracks occur on the thermosetting resin film 12 which is continuously subjected to the pressure applied from the bump 91. Finally, when the first surface 12 a of the thermosetting resin film 12 is pressed against the bump forming surface 9 a of the semiconductor wafer 9, the upper portion 910 of the bump 91 is in a state of protruding through the thermosetting resin film 12. Moreover, in this final stage, generally, the upper portion 910 of the bump 91 does not penetrate the buffer layer 13. This is because the buffer layer 13 has a buffer effect against the pressure applied from the bump 91.
如圖2(b)所示,將第一保護膜形成用片材1貼附在半導體晶圓9的凸塊形成面9a的階段,在凸塊91的上部910,熱硬化性樹脂膜12完全未殘留或幾乎未殘留。且,在本說明書中,所謂「在凸塊的上部幾乎未殘留熱硬化性樹脂膜」,若無特別說明,則是指在凸塊的上部雖然有一點點熱硬化性樹脂膜殘留,然而,其殘留量是當將具備此等凸塊的半導體晶片覆晶安裝於配線基板時,不會影響半導體晶片與配線基板的電性連接的程度。As shown in FIG. 2( b ), when the first protective film forming sheet 1 is attached to the bump forming surface 9 a of the semiconductor wafer 9, on the upper portion 910 of the bump 91, the thermosetting resin film 12 is completely No or almost no residue. In addition, in this specification, "there is almost no thermosetting resin film remaining on the top of the bump", unless otherwise specified, it means that although there is a little thermosetting resin film remaining on the top of the bump, however, The remaining amount is the degree of electrical connection between the semiconductor wafer and the wiring substrate when the semiconductor wafer with these bumps is flip-chip mounted on the wiring substrate.
像這樣,在凸塊91的上部910,為了能夠抑制熱硬化性樹脂膜12的殘留,而設計成以下的方式,當上述熱硬化性樹脂膜12受到來自凸塊91所施加的壓力而變形時,熱硬化性樹脂膜12特別容易破裂。In this way, the upper portion 910 of the bump 91 is designed to suppress the remaining of the thermosetting resin film 12 in such a manner that when the thermosetting resin film 12 is deformed by the pressure applied from the bump 91 The thermosetting resin film 12 is particularly susceptible to cracking.
將第一保護膜形成用片材1貼附在半導體晶圓9的凸塊形成面9a後,視需要而進一步在與半導體晶圓9的凸塊形成面9a相反側的面(背面) 9b進行研削後,在此背面9b貼附第二保護膜形成用片材(圖式省略)。
接著,如圖2(c)所示,從熱硬化性樹脂膜12將第一基材11及緩衝層13剝離。
接著,藉由使熱硬化性樹脂膜12硬化,如圖2(d)所示,在凸塊形成面9a形成第一保護膜12’。After the first protective film forming sheet 1 is attached to the bump forming surface 9a of the semiconductor wafer 9, as necessary, it is further performed on the surface (rear surface) 9b opposite to the bump forming surface 9a of the semiconductor wafer 9 After grinding, the second protective film forming sheet (not shown) is attached to the back surface 9b.
Next, as shown in FIG. 2( c ), the first base material 11 and the buffer layer 13 are peeled from the thermosetting resin film 12.
Next, by curing the thermosetting resin film 12, as shown in FIG. 2(d), the first protective film 12' is formed on the bump forming surface 9a.
使用本發明的熱硬化性樹脂膜12,以及具備此等的第一保護膜形成用片材1,而在凸塊形成面9a形成第一保護膜12’時,由於熱硬化前的熱硬化性樹脂膜12以10℃/min使其升溫時,在90℃~130℃時的剪切黏度的最小值為500Pa‧s以上,而不會有如圖3(c)及圖3(d)所示之因發生收縮而使半導體晶圓的露出面9ao顯露的缺陷產生的疑慮。When the thermosetting resin film 12 of the present invention and the sheet 1 for forming the first protective film are provided, and the first protective film 12' is formed on the bump forming surface 9a, the thermosetting property before thermosetting When the resin film 12 is heated at 10°C/min, the minimum value of the shear viscosity at 90°C to 130°C is 500 Pa‧s or more, as shown in Fig. 3(c) and Fig. 3(d) There is a doubt that the defects exposed on the exposed surface 9ao of the semiconductor wafer are caused by shrinkage.
本發明的一態樣是一種樹脂層形成用組合物,其含有聚乙烯縮丁醛(具有上述式(i)-1、(i)-2及(i)-3表示的構成單元者,含量:相對於樹脂層形成用組合物的固形分的總質量,為5~85質量%,更佳為5~50質量%,進一步更佳為5~20質量%)作為聚合物成分(A);含有環氧樹脂(B1) (液狀雙酚A型環氧樹脂,環氧當量404~412g/eq,含量:相對於樹脂層形成用組合物的固形分的總質量,為20~40質量%,更佳為25~35質量%)、熱硬化劑(B2) (酚醛型酚樹脂,含量:相對於樹脂層形成用組合物的固形分的總質量,為10~20質量%,更佳為13~17質量%)作為熱硬化性成分(B);含有2-苯基-4,5-二羥甲基咪唑(含量:相對於樹脂層形成用組合物的固形分的總質量,為0.05~2質量%,更佳為0.1~1質量%)作為硬化促進劑(C);含有經環氧基修飾的球狀氧化矽(平均粒徑0.05μm,含量:相對於樹脂層形成用組合物的固形分的總質量,為3~60質量%,更佳為3~55質量%,進一步更佳為5~10質量%)作為填充材(D),(但是,各成分的含量的合計,相對於樹脂層形成用組合物的固形分的總質量,不超過100質量%)。
本發明的另一態樣是一種樹脂層形成用組合物,其含有聚乙烯縮丁醛(具有上述式(i)-1、(i)-2及(i)-3表示的構成單元者,含量:相對於樹脂層形成用組合物的固形分的總質量,為5~85質量%,更佳為5~50質量%,進一步更佳為5~20質量%)作為聚合物成分(A);含有環氧樹脂(B1) (二環戊二烯型環氧樹脂,環氧當量254~264g/eq,含量:相對於樹脂層形成用組合物的固形分的總質量,為10~30質量%,更佳為15~25質量%)、熱硬化劑(B2) (酚醛型酚樹脂,含量:相對於樹脂層形成用組合物的固形分的總質量,為10~20質量%,更佳為13~17質量%)作為熱硬化性成分(B);含有2-苯基-4,5-二羥甲基咪唑(含量:相對於樹脂層形成用組合物的固形分的總質量,為0.05~2質量%,更佳為0.1~1質量%)作為硬化促進劑(C);含有經環氧基修飾的球狀氧化矽(平均粒徑0.05μm,含量:相對於樹脂層形成用組合物的固形分的總質量,為3~60質量%為佳,更佳為3~55質量%,進一步更佳為5~10質量%)作為填充材(D),(但是,各成分的含量的合計,相對於樹脂層形成用組合物的固形分的總質量,不超過100質量%)。
本發明又另一個態樣是一種樹脂層形成用組合物,其含有聚乙烯縮丁醛(具有上述式(i)-1、(i)-2及(i)-3表示的構成單元者,含量:相對於樹脂層形成用組合物的固形分的總質量,為5~85質量%,更佳為5~50質量%,進一步更佳為5~20質量%)作為聚合物成分(A);含有環氧樹脂(B1) (液狀雙酚A型環氧樹脂(環氧當量404~412g/eq,含量:相對於樹脂層形成用組合物的固形分的總質量,為20~40質量%,更佳為25~35質量%)及二環戊二烯型環氧樹脂(環氧當量254~264g/eq,含量:相對於樹脂層形成用組合物的固形分的總質量,為10~30質量%,更佳為15~25質量%))、熱硬化劑(B2) (酚醛型酚樹脂,含量:相對於樹脂層形成用組合物的固形分的總質量,為10~20質量%,更佳為13~17質量%)作為熱硬化性成分(B);含有2-苯基-4,5-二羥甲基咪唑(含量:相對於樹脂層形成用組合物的固形分的總質量,為0.05~2質量%,更佳為0.1~1質量%)作為硬化促進劑(C);含有經環氧基修飾的球狀氧化矽(平均粒徑0.05μm,含量:相對於樹脂層形成用組合物的固形分的總質量,為3~60質量%,更佳為3~55質量%,進一步更佳為5~10質量%)作為填充材(D),(但是,各成分的含量的合計,相對於樹脂層形成用組合物的固形分的總質量,不超過100質量%)。An aspect of the present invention is a composition for forming a resin layer, which contains polyvinyl butyral (having structural units represented by the above formulas (i)-1, (i)-2, and (i)-3, content : 5 to 85% by mass, more preferably 5 to 50% by mass, and still more preferably 5 to 20% by mass relative to the total mass of the solid content of the composition for forming a resin layer) as a polymer component (A); Contains epoxy resin (B1) (liquid bisphenol A epoxy resin, epoxy equivalent 404 to 412 g/eq, content: 20 to 40% by mass relative to the total mass of the solid content of the resin layer forming composition , More preferably 25 to 35% by mass), thermosetting agent (B2) (phenolic phenol resin, content: relative to the total mass of the solid content of the resin layer forming composition, 10 to 20% by mass, more preferably 13 to 17% by mass) as a thermosetting component (B); containing 2-phenyl-4,5-dimethylolimidazole (content: relative to the total mass of the solid content of the resin layer forming composition, 0.05 ~2% by mass, more preferably 0.1~1% by mass) as a hardening accelerator (C); containing epoxy-modified spherical silica (average particle diameter 0.05 μm, content: relative to the composition for forming a resin layer The total mass of the solid content is 3 to 60% by mass, more preferably 3 to 55% by mass, and even more preferably 5 to 10% by mass) as the filler (D), (however, the total content of each component, It does not exceed 100% by mass relative to the total mass of the solid content of the composition for forming a resin layer.
Another aspect of the present invention is a composition for forming a resin layer, which contains polyvinyl butyral (having structural units represented by the above formulas (i)-1, (i)-2, and (i)-3, Content: 5 to 85% by mass, more preferably 5 to 50% by mass, further more preferably 5 to 20% by mass relative to the total mass of the solid content of the composition for forming a resin layer) as a polymer component (A) ; Contains epoxy resin (B1) (dicyclopentadiene type epoxy resin, epoxy equivalent 254~264g/eq, content: relative to the total mass of the solid content of the resin layer forming composition, is 10~30 mass %, more preferably 15-25% by mass), thermosetting agent (B2) (phenolic phenol resin, content: 10-20% by mass relative to the total mass of the solid content of the resin layer forming composition, more preferably 13 to 17% by mass) as a thermosetting component (B); containing 2-phenyl-4,5-dimethylolimidazole (content: relative to the total mass of the solid content of the composition for forming a resin layer, is 0.05~2% by mass, more preferably 0.1~1% by mass) as a hardening accelerator (C); contains spherical silica modified with epoxy groups (average particle diameter 0.05 μm, content: relative to the combination for resin layer formation The total mass of the solid content of the substance is preferably 3 to 60% by mass, more preferably 3 to 55% by mass, and even more preferably 5 to 10% by mass) as the filler (D), (however, the content of each component The total of does not exceed 100% by mass relative to the total mass of the solid content of the composition for forming a resin layer.
Still another aspect of the present invention is a composition for forming a resin layer, which contains polyvinyl butyral (having structural units represented by the above formulas (i)-1, (i)-2, and (i)-3, Content: 5 to 85% by mass, more preferably 5 to 50% by mass, further more preferably 5 to 20% by mass relative to the total mass of the solid content of the composition for forming a resin layer) as a polymer component (A) ; Contains epoxy resin (B1) (liquid bisphenol A epoxy resin (epoxy equivalent 404~412g/eq, content: relative to the total mass of the solid content of the resin layer forming composition, is 20~40 mass %, more preferably 25 to 35% by mass) and dicyclopentadiene type epoxy resin (epoxy equivalent 254 to 264g/eq, content: relative to the total mass of the solid content of the resin layer forming composition, 10 ~30% by mass, preferably 15-25% by mass)), thermosetting agent (B2) (phenolic phenol resin, content: relative to the total mass of the solid content of the resin layer forming composition, 10-20% %, more preferably 13 to 17% by mass) as a thermosetting component (B); containing 2-phenyl-4,5-dimethylolimidazole (content: relative to the solid content of the resin layer forming composition) The total mass is 0.05~2% by mass, more preferably 0.1~1% by mass) as a hardening accelerator (C); contains spherical silica modified with epoxy groups (average particle diameter 0.05μm, content: relative to resin The total mass of the solid content of the layer-forming composition is 3 to 60% by mass, more preferably 3 to 55% by mass, and even more preferably 5 to 10% by mass) as a filler (D), (however, each component The total of the content of R, does not exceed 100% by mass relative to the total mass of the solid content of the composition for forming a resin layer.
本發明的一態樣是一種將上述樹脂層形成用組合物形成而成的熱硬化性樹脂膜(厚度:1~100μm,更佳為5~75μm,特佳為5~50μm)。
本發明的另一態樣是包括一種在第一支撐片材的一側的表面上具備上述熱硬化性樹脂膜的第一保護膜形成用片材。
[實施例]An aspect of the present invention is a thermosetting resin film (thickness: 1 to 100 μm, more preferably 5 to 75 μm, and particularly preferably 5 to 50 μm) formed from the composition for forming a resin layer.
Another aspect of the present invention includes a sheet for forming a first protective film provided with the above thermosetting resin film on the surface of one side of the first support sheet.
[Example]
以下,藉由具體的實施例,更詳細說明本發明。但是,本發明並非限定於以下所示的實施例者。Hereinafter, the present invention will be described in more detail with specific examples. However, the present invention is not limited to the embodiments shown below.
熱硬化性樹脂膜形成用組合物的製造所使用的成分如以下所示。
‧聚合物成分(A)
聚合物成分(A)-1:具有下述式(i)-1、(i)-2及(i)-3表示的構成單元的聚乙烯縮丁醛(積水化學工業公司製「S-LEC (註冊商標) B BL-10」,重量平均分子量25,000,玻璃轉換溫度59℃。式中,l1
為68~74mol%,m1
為1~3mol%,n1
約為28mol%)。The components used in the production of the thermosetting resin film forming composition are shown below.
‧Polymer composition (A)
Polymer component (A)-1: Polyvinyl butyral having structural units represented by the following formulas (i)-1, (i)-2 and (i)-3 (manufactured by Sekisui Chemical Industry Co., Ltd. "S-LEC" (Registered trademark) B BL-10", weight average molecular weight 25,000, glass transition temperature 59°C. In the formula, l 1 is 68 to 74 mol%, m 1 is 1 to 3 mol%, and n 1 is about 28 mol%).
聚合物成分(A)-2:具有下述式(i)-1、(i)-2及(i)-3表示的構成單元的聚乙烯縮丁醛(積水化學工業公司製「S-LEC (註冊商標) B BL-1」,重量平均分子量30,000,玻璃轉換溫度66℃。式中,l1 為60~66mol%,m1 為1~3mol%,n1 約為36mol%)Polymer component (A)-2: Polyvinyl butyral having structural units represented by the following formulas (i)-1, (i)-2, and (i)-3 ("S-LEC" manufactured by Sekisui Chemical Co., Ltd. (Registered trademark) B BL-1", weight average molecular weight 30,000, glass transition temperature 66°C. In the formula, l 1 is 60 to 66 mol%, m 1 is 1 to 3 mol%, and n 1 is about 36 mol%)
聚合物成分(A)-3:具有下述式(i)-1、(i)-2及(i)-3表示的構成單元的聚乙烯縮丁醛(積水化學工業公司製「S-LEC (註冊商標) SV-02」,重量平均分子量50,000,玻璃轉換溫度59℃。式中,n1 約為22mol%)Polymer component (A)-3: Polyvinyl butyral having structural units represented by the following formulas (i)-1, (i)-2, and (i)-3 ("S-LEC" manufactured by Sekisui Chemical Industry Co., Ltd. (Registered trademark) SV-02", weight average molecular weight 50,000, glass transition temperature 59°C. In the formula, n 1 is about 22 mol%)
聚合物成分(A)-4:具有下述式(i)-1、(i)-2及(i)-3表示的構成單元的聚乙烯縮丁醛(積水化學工業公司製「S-LEC (註冊商標) B BM-S」,重量平均分子量66,000,玻璃轉換溫度60℃。式中,l1 為70~76mol%,m1 為4~6mol%,n1 約為22mol%)Polymer component (A)-4: Polyvinyl butyral having structural units represented by the following formulas (i)-1, (i)-2 and (i)-3 (manufactured by Sekisui Chemical Industry Co., Ltd. "S-LEC" (Registered trademark) B BM-S", weight average molecular weight 66,000, glass transition temperature 60°C. In the formula, l 1 is 70 to 76 mol%, m 1 is 4 to 6 mol%, and n 1 is about 22 mol%)
[化2]
[Chem 2]
式中,l1 、m1 及n1 分別為構成單元的含有比例(mol%)。In the formula, l 1 , m 1 and n 1 are the content ratio (mol%) of the constituent units.
‧熱硬化性成分(B)
環氧樹脂(B1)-1:液狀雙酚A型環氧樹脂(DIC公司製「EPICLON (註冊商標) EXA-4850-1000」,環氧當量404~412g/eq)
環氧樹脂(B1)-2:二環戊二烯型環氧樹脂(DIC公司製「EPICLON (註冊商標) HP-7200」,環氧當量254~264g/eq)
熱硬化劑(B2)-1:酚醛型酚樹脂(昭和電工公司製「Shonol (註冊商標) BRG-556」)‧Thermosetting component (B)
Epoxy resin (B1)-1: Liquid bisphenol A epoxy resin ("EPICLON (registered trademark) EXA-4850-1000" manufactured by DIC Corporation, epoxy equivalent 404~412g/eq)
Epoxy resin (B1)-2: Dicyclopentadiene type epoxy resin ("EPICLON (registered trademark) HP-7200" manufactured by DIC Corporation, epoxy equivalent 254~264g/eq)
Thermosetting agent (B2)-1: phenolic phenol resin ("Shonol (registered trademark) BRG-556" manufactured by Showa Denko Corporation)
‧硬化促進劑(C)
硬化促進劑(C)-1:2-苯基-4,5-二羥甲基咪唑(四國化成工業公司製「CUREZOL (註冊商標) 2PHZ」)
‧填充材(D)
填充材(D)-1:經環氧基修飾的球狀氧化矽(Admatechs公司製「ADMANANO (註冊商標) YA050C-MKK」,平均粒徑0.05μm)‧Hardening accelerator (C)
Hardening accelerator (C)-1: 2-phenyl-4,5-dimethylolimidazole ("CUREZOL (registered trademark) 2PHZ" manufactured by Shikoku Chemical Industry Co., Ltd.)
‧Filling material (D)
Filler (D)-1: spherical silica modified with epoxy groups (Admatechs Inc. "ADMANANO (registered trademark) YA050C-MKK", average particle diameter 0.05 μm)
[實施例1]
<熱硬化性樹脂膜的製造>
(熱硬化性樹脂膜形成用組合物的製造)
使(A)-1、環氧樹脂(B1)-1、環氧樹脂(B1)-2、熱硬化劑(B2)-1、硬化促進劑(C)-1及填充材(D)-1此等的含量的比例以成為表1所示的值的方式,溶解或分散於丁酮中,在23℃攪拌,藉此可獲得固形分濃度為55質量%的樹脂層形成用組合物,作為熱硬化性樹脂膜形成用組合物。且,表1中的含有成分的欄中「-」的記載是指熱硬化性樹脂膜形成用組合物並未含有此成分。[Example 1]
<Manufacture of thermosetting resin film>
(Manufacture of thermosetting resin film forming composition)
(A)-1, epoxy resin (B1)-1, epoxy resin (B1)-2, thermosetting agent (B2)-1, curing accelerator (C)-1 and filler (D)-1 The ratio of these contents was dissolved or dispersed in methyl ethyl ketone so as to be the value shown in Table 1, and stirred at 23°C, whereby a composition for forming a resin layer having a solid content concentration of 55% by mass was obtained as The composition for thermosetting resin film formation. In addition, the description of "-" in the component-containing column in Table 1 means that the composition for forming a thermosetting resin film does not contain this component.
(熱硬化性樹脂膜的製造)
對於聚對苯二甲酸乙二醇酯製膜的單面藉由矽酮處理而經剝離處理的剝離膜(LINTEC公司製「SP-PET381031」,厚度38μm),在上述剝離處理面上,塗佈上述所得的熱硬化性樹脂膜形成用組合物,藉由在120℃使其加熱乾燥2分鐘,獲得厚度30μm的熱硬化性樹脂膜。
熱硬化性樹脂膜的厚度,是使用接觸式測厚計(Teclock公司製,製品名稱「PG-02」)而測定。(Manufacture of thermosetting resin film)
For the peeling film (“SP-PET381031” manufactured by LINTEC Corporation, thickness 38 μm) on one side of the polyethylene terephthalate film which was peeled off by silicone treatment on one side, the above peeling treated surface was coated The thermosetting resin film forming composition obtained above was heated and dried at 120° C. for 2 minutes to obtain a thermosetting resin film with a thickness of 30 μm.
The thickness of the thermosetting resin film was measured using a contact thickness gauge (manufactured by Teclock, product name "PG-02").
<熱硬化性樹脂膜的最低剪切黏度評價>
接著,藉由積層複數片此熱硬化性樹脂膜,形成厚度500μm的熱硬化性樹脂膜。從其中製作直徑25mm,厚度500μm的圓柱形狀的評價用樣品,將此樣品設置在剪切黏度測定裝置。此時,在測定裝置的設置處載置上述樣品,從樣品的上面推向測定治具,藉此將樣品固定地設置在上述設置處。
以頻率:1Hz,升溫速度‧10℃/min的測定條件,從室溫起至150℃為止的剪切黏度每隔1秒進行測定。測定結果如圖4所示。然後,求得在此當中90℃~130℃時的剪切黏度的最小值。<Evaluation of minimum shear viscosity of thermosetting resin film>
Next, by laminating a plurality of the thermosetting resin films, a thermosetting resin film having a thickness of 500 μm is formed. From this, a cylindrical sample for evaluation having a diameter of 25 mm and a thickness of 500 μm was prepared, and this sample was set in a shear viscosity measuring device. At this time, the sample is placed on the installation place of the measurement device, and pushed from the top of the sample to the measurement jig, whereby the sample is fixedly installed in the installation place.
The shear viscosity from room temperature to 150°C was measured every 1 second under the measurement conditions of frequency: 1 Hz, heating rate ‧10°C/min. The measurement results are shown in Fig. 4. Then, the minimum value of the shear viscosity at 90℃~130℃ is obtained.
<第一保護膜形成用片材的製造>
接著,使用貼附膠布(LINTEC公司製「E-8510HR」)作為第一支撐片材,在此貼附膠布的貼附對象層,貼合上述剝離膜上的熱硬化性樹脂膜,藉此可獲得第一支撐片材、熱硬化性樹脂膜及剝離膜依此順序,在此等的厚度方向積層所構成的具有如圖1所示構造的第一保護膜形成用片材。<Manufacture of a sheet for forming the first protective film>
Next, using an adhesive tape ("E-8510HR" manufactured by LINTEC) as the first support sheet, the object layer to which the adhesive tape is attached is bonded to the thermosetting resin film on the above-mentioned peeling film. The first support sheet, the thermosetting resin film, and the release film are obtained in this order, and a sheet for forming a first protective film having a structure as shown in FIG.
<收縮評價>
上述所得的第一保護膜形成用片材上,去除剝離膜,將藉此所露出的熱硬化性樹脂膜的表面(露出面)貼壓在8英吋φ凸塊晶圓的凸塊形成面,而在半導體晶圓的凸塊形成面貼附第一保護膜形成用片材。此時,第一保護膜形成用片材的貼附,是使用貼附裝置(軋輥式層壓機,LINTEC公司製「RAD-3510 F/12」),以加熱檯溫度90℃,貼附速度2 mm/sec,貼附壓力0.5 MPa的條件,一邊加熱熱硬化性樹脂膜一邊進行。作為8英吋φ凸塊晶圓,使用凸塊的高度為210μm,凸塊的寬度為250μm,相鄰凸塊間的距離為400μm,0.4mm pich BGA的半導體晶圓(Walts製WLP TEG M2)。
藉由以上方式,可獲得在半導體晶圓的凸塊形成面貼附有第一保護膜形成用片材所構成的積層構造體(1)。<Evaluation of shrinkage>
On the first protective film forming sheet obtained above, the peeling film was removed, and the surface (exposed surface) of the thermosetting resin film exposed by this was pressed against the bump forming surface of the 8-inch φ bump wafer The first protective film forming sheet is attached to the bump forming surface of the semiconductor wafer. At this time, the first protective film forming sheet was attached by using an attaching device (roller laminator, "RAD-3510 F/12" manufactured by LINTEC), with a heating table temperature of 90°C and an attaching speed 2 mm/sec, with a pressure of 0.5 MPa, while heating the thermosetting resin film. As an 8-inch φ bump wafer, a bump height of 210 μm, a bump width of 250 μm, a distance between adjacent bumps of 400 μm, and a 0.4 mm pich BGA semiconductor wafer (WLP TEG M2 manufactured by Walts) are used. .
In the above manner, a laminated structure (1) can be obtained in which the first protective film forming sheet is attached to the bump formation surface of the semiconductor wafer.
之後,進行紫外線照射,將貼附膠布部分加以剝離(LINTEC公司製,RAD-2700),貼附有熱硬化性樹脂膜的晶圓在加壓烤爐(LINTEC製RAD-9100)中,以溫度:130℃、時間:2h、爐內壓力:0.5MPa的加熱條件進行熱處理,使熱硬化性樹脂膜熱硬化。
熱硬化後,以電子顯微鏡掃描凸塊面,半導體晶圓的表面具有看得見的點的樣品,其收縮評價為「有」,半導體晶圓的表面沒有看得見的點的樣品,其收縮評價為「無」。After that, it was irradiated with ultraviolet rays, and the adhesive tape was peeled off (made by LINTEC, RAD-2700). The wafer with the thermosetting resin film attached was put in a pressure oven (RAD-9100 made by LINTEC) at a temperature : 130 ℃, time: 2h, furnace pressure: 0.5MPa heating conditions for heat treatment, so that the thermosetting resin film is thermally cured.
After thermal hardening, the bump surface was scanned with an electron microscope. Samples with visible spots on the surface of the semiconductor wafer were evaluated as having shrinkage. Samples with no visible spots on the surface of the semiconductor wafer were retracted. The evaluation is "none".
[實施例2~8、比較例1]
<熱硬化性樹脂膜的製造及評價>
在熱硬化性樹脂膜形成用組合物的製造時,各成分的種類及含量的比例的任一者或兩者依照表1及表2所示,除此以外,以與實施例1相同的方法,製造熱硬化性樹脂膜及第一保護膜形成用片材,評價熱硬化性樹脂膜的最低剪切黏度及收縮。結果如表1、表2及圖4所示。[Examples 2-8, Comparative Example 1]
<Manufacture and evaluation of thermosetting resin film>
In the production of the thermosetting resin film-forming composition, either or both of the types and content ratios of the components are as shown in Tables 1 and 2, except for the same method as in Example 1. , Manufacturing a sheet for forming a thermosetting resin film and a first protective film, and evaluating the minimum shear viscosity and shrinkage of the thermosetting resin film. The results are shown in Table 1, Table 2 and Figure 4.
[表1]
[表2]
從表1、表2所示的結果可知,在90℃~130℃時的剪切黏度的最小值為500Pa‧s以上的實施例1~8的熱硬化性樹脂膜,在半導體晶圓未發生露出面9ao顯露的缺陷,未發生收縮。
[產業可利用性]From the results shown in Table 1 and Table 2, it can be seen that the minimum value of the shear viscosity at 90°C to 130°C is 500 Pa‧s or more, and the thermosetting resin films of Examples 1 to 8 did not occur on the semiconductor wafer The defects exposed on the exposed surface 9ao did not shrink.
[Industry availability]
本發明可使用在覆晶安裝方法,可利用於在連接墊部位具有凸塊的半導體晶片等的製造中。The present invention can be used in a flip-chip mounting method, and can be used in the manufacture of semiconductor wafers having bumps at connection pads.
1‧‧‧第一保護膜形成用片材1‧‧‧ First protective film forming sheet
11‧‧‧第一基材 11‧‧‧The first substrate
11a‧‧‧第一基材的第一面 11a‧‧‧First side of the first substrate
12‧‧‧熱硬化性樹脂膜 12‧‧‧thermosetting resin film
12a‧‧‧熱硬化性樹脂膜的第一面 12a‧‧‧The first side of thermosetting resin film
12’‧‧‧第一保護膜 12’‧‧‧First protective film
13‧‧‧緩衝層 13‧‧‧buffer layer
13a‧‧‧緩衝層的第一面 13a‧‧‧The first side of the buffer layer
101‧‧‧第一支撐片材 101‧‧‧ First support sheet
101a‧‧‧表面 101a‧‧‧surface
9‧‧‧半導體晶圓 9‧‧‧ semiconductor wafer
9a‧‧‧半導體晶圓的凸起凸塊形成面 9a‧‧‧Surface bump formation surface of semiconductor wafer
9ao‧‧‧半導體晶圓的露出面 9ao‧‧‧Exposed surface of semiconductor wafer
91‧‧‧凸起凸塊 91‧‧‧Bump
91a‧‧‧凸起凸塊的表面 91a‧‧‧Bump surface
910‧‧‧凸起凸塊的上部 910‧‧‧The upper part of the convex bump
[圖1]是例示本發明的熱硬化性樹脂膜及第一保護膜形成用片材的一實施形態的剖面圖。1 is a cross-sectional view illustrating an embodiment of a sheet for forming a thermosetting resin film and a first protective film of the present invention.
[圖2]是例示圖1所示的熱硬化性樹脂膜及第一保護膜形成用片材的使用方法之一例的剖面圖。 2 is a cross-sectional view illustrating an example of a method of using the thermosetting resin film and the first protective film forming sheet shown in FIG. 1.
[圖3]是例示比較例的熱硬化性樹脂膜及第一保護膜形成用片材的使用方法之一例的剖面圖。 3 is a cross-sectional view illustrating an example of a method of using the thermosetting resin film and the first protective film forming sheet of the comparative example.
[圖4]是表示實施例及比較例的熱硬化性樹脂膜的剪切黏度的測定結果的圖表。 4 is a graph showing the measurement results of the shear viscosity of the thermosetting resin films of Examples and Comparative Examples.
Claims (4)
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| TWI769072B (en) * | 2020-12-23 | 2022-06-21 | 南韓商斗山股份公司 | Underfill film for semiconductor package and manufacturing method of semiconductor package using the same |
| TWI885073B (en) * | 2020-02-27 | 2025-06-01 | 日商琳得科股份有限公司 | Resin film, composite sheet, and method for manufacturing semiconductor chip having first protective film |
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| CN120809577A (en) * | 2019-12-27 | 2025-10-17 | 琳得科株式会社 | Method for manufacturing semiconductor chip |
| CN114930503A (en) * | 2019-12-27 | 2022-08-19 | 琳得科株式会社 | Kit and method for manufacturing semiconductor chip |
| WO2022138946A1 (en) * | 2020-12-25 | 2022-06-30 | リンテック株式会社 | Method for manufacturing semiconductor chip |
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| JP2015131969A (en) * | 2015-04-06 | 2015-07-23 | 日立化成株式会社 | Epoxy resin composition for semiconductor encapsulation |
| JP6774301B2 (en) * | 2015-11-04 | 2020-10-21 | リンテック株式会社 | Thermosetting resin film and first protective film forming sheet |
| TWI761317B (en) * | 2015-11-04 | 2022-04-21 | 日商琳得科股份有限公司 | Heat-curable resin film, sheet for forming first protective film, and method of forming first protective film |
| JP6670156B2 (en) * | 2016-04-05 | 2020-03-18 | リンテック株式会社 | Circuit member connection sheet and method of manufacturing semiconductor device |
| JP6874350B2 (en) * | 2016-12-06 | 2021-05-19 | 住友ベークライト株式会社 | Resin sheet |
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| TWI885073B (en) * | 2020-02-27 | 2025-06-01 | 日商琳得科股份有限公司 | Resin film, composite sheet, and method for manufacturing semiconductor chip having first protective film |
| TWI887364B (en) * | 2020-02-27 | 2025-06-21 | 日商琳得科股份有限公司 | Thermosetting resin film, composite sheet, and method for manufacturing semiconductor chip having first protective film |
| TWI891734B (en) * | 2020-02-27 | 2025-08-01 | 日商琳得科股份有限公司 | Resin film, composite sheet, and method for manufacturing semiconductor chip having first protective film |
| TWI905141B (en) * | 2020-02-27 | 2025-11-21 | 日商琳得科股份有限公司 | Methods for manufacturing protective film forming wafers, wafers with protective films, and laminates. |
| TWI769072B (en) * | 2020-12-23 | 2022-06-21 | 南韓商斗山股份公司 | Underfill film for semiconductor package and manufacturing method of semiconductor package using the same |
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| WO2019098329A1 (en) | 2019-05-23 |
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| JP7233377B2 (en) | 2023-03-06 |
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