TW201920718A - Device for depositing a structured layer on a substrate with use of a mask - Google Patents
Device for depositing a structured layer on a substrate with use of a mask Download PDFInfo
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- TW201920718A TW201920718A TW107130658A TW107130658A TW201920718A TW 201920718 A TW201920718 A TW 201920718A TW 107130658 A TW107130658 A TW 107130658A TW 107130658 A TW107130658 A TW 107130658A TW 201920718 A TW201920718 A TW 201920718A
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- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000000151 deposition Methods 0.000 title claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 75
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 239000012212 insulator Substances 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 24
- 238000009833 condensation Methods 0.000 claims description 20
- 230000005494 condensation Effects 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 4
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- 239000007789 gas Substances 0.000 description 19
- 239000010410 layer Substances 0.000 description 16
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 238000000576 coating method Methods 0.000 description 7
- 239000007858 starting material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 239000004917 carbon fiber Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
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- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000006262 metallic foam Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
本發明係有關於一種用於將透過使用遮罩而經側向結構化之層沉積於至少一個基板上的裝置,特別是透過將蒸汽饋送入沉積室以及將蒸汽凝結於基板上來實現,具有可藉由冷卻構件冷卻之用於保持該基板的基板支架,以及固定於遮罩框架上之用於貼靠至基板的遮罩。 The invention relates to a device for depositing a laterally structured layer by using a mask on at least one substrate, and in particular, it is realized by feeding steam into a deposition chamber and condensing steam on the substrate. A substrate holder for holding the substrate cooled by the cooling member, and a mask for abutting to the substrate fixed on the mask frame.
在DE 10 2013 101 586 A1中描述過此種裝置。在使用例如如WO 2012/175128 A1所描述之蒸發器的情況下,自一有機材料產生蒸汽,透過例如如DE 10 2014 116 991 A1所描述之經主動加熱的氣體入口構件將此蒸汽饋送入沉積裝置之沉積室。沿垂直方向在氣體入口構件下方設有藉由冷卻構件冷卻至一低於蒸汽之凝結溫度的溫度的基板支架,在此基板支架上貼靠有基板,其係用有機起始材料塗佈。此有機起始材料為在凝結狀態下因電流之穿過而發光的分子。此類OLED用於製造螢幕。為了製造紅色、綠色和藍色像素,使用不同的有機起始材料。為了以像素網格對沉積至基板之層進行側向結構化,使用陰影遮罩。此類遮罩之材料厚度介於1μm與100μm之間。通常為40μm。經遮蔽之結構的結構尺寸為數μm。基板支架之面積或遮罩之面積可處於平方公尺範圍內。 Such a device is described in DE 10 2013 101 586 A1. With the use of, for example, an evaporator as described in WO 2012/175128 A1, steam is generated from an organic material and this steam is fed into the deposition through an actively heated gas inlet member such as described in DE 10 2014 116 991 A1 Device deposition chamber. A substrate holder cooled to a temperature lower than the condensation temperature of steam by a cooling member is provided below the gas inlet member in a vertical direction, and a substrate is abutted on the substrate holder, which is coated with an organic starting material. This organic starting material is a molecule that emits light in the condensed state due to the passage of current. This type of OLED is used to make screens. To make red, green, and blue pixels, different organic starting materials are used. In order to laterally structure the layer deposited on the substrate in a pixel grid, a shadow mask is used. The material thickness of such masks is between 1 μm and 100 μm. It is usually 40 μm. The structure size of the masked structure is several μm. The area of the substrate holder or the mask can be within a square meter.
US 2005/0037136 A1描述過一種藉由固定於遮罩支 架下方之遮罩來沉積有機層的裝置。此遮罩支架具有用於將遮罩冷卻的冷卻構件以及用於將遮罩支架之背離冷卻介質的一側加熱的加熱構件。 US 2005/0037136 A1 describes a device for depositing an organic layer by means of a mask fixed under a mask support. This mask holder has a cooling member for cooling the mask and a heating member for heating the side of the mask holder facing away from the cooling medium.
US 2013/0040054 A1描述過一種用於將層沉積在位於經冷卻之基板支架上之基板上的裝置,其中,可將一遮蔽板送入基板支架與經加熱之氣體入口構件之間。 US 2013/0040054 A1 describes a device for depositing layers on a substrate on a cooled substrate support, wherein a shield plate can be fed between the substrate support and a heated gas inlet member.
本發明之目的在於:以便於使用的方式對同類型之裝置進行改進,並且特別是提供措施,其用於以可重現的方式將經精確結構化之層沉積於基板上。 The object of the present invention is to improve the same type of device in a convenient way, and in particular to provide measures for depositing a precisely structured layer on a substrate in a reproducible manner.
本發明用以達成上述目的之解決方案為在申請專利範圍中給出之發明,其中,附屬項不僅為獨立項之有益改進方案,亦為用以達成上述目的之獨立解決方案。 The solution for achieving the above object of the present invention is the invention given in the scope of patent application. Among them, the subsidiary item is not only a beneficial improvement solution for the independent item but also an independent solution for achieving the above object.
本發明係有關於一種製造配設有有機發光二極體之自發光顯示器的製造方法。在反應器之製程室中沉積OLED,在該製程室中設有基板支架,在該基板支架上貼靠有待塗佈之大面積的基板。對該基板支架進行冷卻,使得透過經加熱之氣體入口構件饋送入製程室之有機起始材料能夠凝結在基板之表面上。為了實施該方法,該製程室應當(但較佳不僅)設計成使得僅在基板上或在貼靠於基板上之遮罩上,而不在製程室中之其他位置上發生有機起始材料之沉積、特別是凝結。亦即,起始材料在製程室內之其他位置上的沉積可能造成以下後果:沉積物在使用其他有機起始材料沉積其他層的情況下蒸發並導致蒸汽之非期望的污染。 The invention relates to a method for manufacturing a self-emitting display equipped with an organic light emitting diode. An OLED is deposited in a process chamber of a reactor, and a substrate support is provided in the process chamber, and a large-area substrate to be coated is abutted on the substrate support. The substrate holder is cooled so that the organic starting material fed into the process chamber through the heated gas inlet member can condense on the surface of the substrate. In order to implement the method, the process chamber should be (but preferably not only) designed so that the deposition of organic starting materials occurs only on the substrate or on a mask that is placed against the substrate, and not elsewhere in the process chamber. , Especially condensation. That is, the deposition of starting materials at other locations within the process chamber may have the following consequences: the deposits evaporate when other layers are deposited using other organic starting materials and cause undesired contamination of steam.
藉由將該遮罩框架包圍之加熱框架,防止透過氣體入 口構件饋送之蒸汽沉積在沉積室內之可能發生重新蒸發沉積物的位置上。藉由在加熱框架與遮罩框架之間延伸之熱絕緣構件防止遮罩框架受到加熱,或者防止加熱框架在其與遮罩框架鄰接之區域內被冷卻至低於沉積溫度。該遮罩框架可貼靠在藉由冷卻構件冷卻之支承框架上。該支承框架將經冷卻之基板支架包圍。但透過遮罩框架在支承框架上之導熱貼靠不足以防止遮罩框架被加熱至高於例如20℃或10℃的溫度。該遮罩框架係將遮罩包圍之構件,其用於輸送遮罩並將其保持在一水平位置中。該遮罩為具有1至100μm之厚度、經呈柵格狀佈置之開口結構化的薄膜,其中使該薄膜與基板表面發生接觸。該等開口中之每一個皆代表一個像素,其中,紅色、藍色以及綠色的像素例如並排,以及在相繼的塗佈步驟中沉積。但發光的、特別是OLED像素不侷限於此等顏色或顏色組合。該等像素亦可具有其他顏色或色調。該遮罩不允許在應用中發生側向扭曲,進而特別是在邊緣處將OLED像素沉積在規定的位置上。該遮罩特別是由因鋼製成,該材料在特定溫度範圍內具有近乎消失的熱膨脹係數。但由於所需的沉積精度,在使用遮罩時的溫度範圍內,熱膨脹必須小於10μm,較佳小於1μm。藉由將遮罩框架與加熱框架熱分離,一方面僅小幅地將遮罩框架加熱,另一方面僅小幅地將加熱框架之邊緣冷卻。藉由該等附加的熱絕緣構件特別是防止因源自加熱框架之熱輻射而造成的加熱。該等絕緣構件可由絕緣體構成,其以在一水平平面中延伸的方式呈框架狀地將遮罩框架或經遮罩框架圍繞之基板支架包圍。該絕緣體可具有一或數個遮蔽板。該等遮蔽板具有相互背離的表面,其可具有高反射性以及特別是具有0.04的較小發射係數。該等表面可經過高度光澤塗佈。該等寬側面 既面向加熱框架,亦面向遮罩框架。此外,該等遮蔽板之導熱性較佳低一點。為此,該等遮蔽板例如可由發泡材料、發泡塑膠或發泡金屬製成。該等遮蔽板可由絕緣體以材料單一的方式構成。例如可在絕緣體中開出若干凹槽,使得在凹槽之間留出的肋部構成遮蔽板。在此情形下,該等遮蔽板實質上呈梳狀地自絕緣體之承載區段伸出。作為此種絕緣體之切削製造的替代方案,亦可鑄造絕緣體。該等遮蔽板尤佳由金屬製成並具有金屬表面塗層。該表面塗層可為金塗層。此外,該絕緣體可以材料單一的方式與該遮罩框架連接,例如,該絕緣體可構成一遮蔽板,該遮蔽板係透過產生遮罩框架之凹槽形成。但類似地,該絕緣體亦可以材料單一的方式與該加熱框架對應。由數個相互平行並且相互間隔一定距離的遮蔽板構成的系統能夠呈框架狀地將遮罩框架包圍,其中,該等遮蔽板在垂直平面中延伸。本發明特別是提出:該絕緣體與該支承框架建立起導熱連接,該支承框架又藉由冷卻構件冷卻。該絕緣體還可被遮罩之邊緣搭接。但加熱框架與遮罩框架之熱分離亦可透過遮罩框架與加熱框架之間的間隙實現。在此情形下,加熱框架與遮罩框架之面向彼此的面亦可經過高度光澤塗佈及/或拋光,使得該等面具有最小的反射係數。還可採用以下方案:該遮罩之外邊緣至少部分地延伸經過該絕緣體。該遮罩可延伸至遮罩框架之外邊緣。在適當選擇用於熱分離的構件的情況下,在該遮罩裝置(其特別是在每個塗佈步驟後被更換,但並非一定要更換)之外邊緣上實現側向溫度梯度,其中,在徑向靠外的位置上,遮罩裝置之溫度高於凝結溫度。但該溫度梯度之斜率足夠大,使得在整個遮罩面之範圍內,遮罩之表面溫度充分地低於凝結溫度。 By heating the frame surrounded by the mask frame, the vapor fed through the gas inlet member is prevented from being deposited in the deposition chamber at a location where re-evaporation of the deposit may occur. The mask frame is prevented from being heated by a thermal insulating member extending between the heating frame and the mask frame, or the heating frame is prevented from being cooled below the deposition temperature in an area adjacent to the mask frame. The mask frame can rest on a support frame cooled by a cooling member. The support frame surrounds the cooled substrate support. However, the thermal contact of the mask frame on the support frame is insufficient to prevent the mask frame from being heated to a temperature higher than, for example, 20 ° C or 10 ° C. The mask frame is a member that surrounds the mask and is used to transport the mask and hold it in a horizontal position. The mask is a thin film structured by openings arranged in a grid shape having a thickness of 1 to 100 μm, wherein the thin film is brought into contact with the surface of a substrate. Each of the openings represents a pixel, where red, blue, and green pixels are, for example, side by side, and are deposited in successive coating steps. But luminescent, especially OLED pixels are not limited to these colors or color combinations. The pixels may also have other colors or shades. The mask does not allow lateral distortion in the application, and in particular, deposits OLED pixels at specified locations at the edges. The mask is made in particular of steel, which has a coefficient of thermal expansion that almost disappears over a specific temperature range. However, due to the required deposition accuracy, the thermal expansion must be less than 10 μm, preferably less than 1 μm, in the temperature range when the mask is used. By thermally separating the mask frame from the heating frame, the mask frame is only slightly heated on the one hand, and the edges of the heating frame are only slightly cooled on the other. With these additional thermally insulating members, heating due to heat radiation originating from the heating frame is particularly prevented. These insulating members may be composed of an insulator that surrounds the mask frame or the substrate holder surrounded by the mask frame in a frame-like manner so as to extend in a horizontal plane. The insulator may have one or more shielding plates. These shielding plates have surfaces facing away from each other, which can have high reflectivity and, in particular, a small emission coefficient of 0.04. These surfaces can be highly gloss coated. These wide sides face both the heating frame and the mask frame. In addition, the thermal conductivity of these shielding plates is preferably lower. To this end, the shielding plates can be made of, for example, foamed material, foamed plastic or foamed metal. These shielding plates may be made of a single material from an insulator. For example, several grooves can be made in the insulator, so that the ribs left between the grooves constitute a shielding plate. In this case, the shielding plates substantially comb-likely protrude from the bearing section of the insulator. As an alternative to cutting manufacturing of such insulators, insulators can also be cast. The shielding panels are particularly preferably made of metal and have a metallic surface coating. The surface coating may be a gold coating. In addition, the insulator may be connected to the mask frame in a single material manner. For example, the insulator may constitute a shield plate formed by forming a groove of the mask frame. But similarly, the insulator can correspond to the heating frame in a single material. A system composed of several shielding plates that are parallel to each other and spaced apart from each other can surround the shielding frame in a frame shape, wherein the shielding plates extend in a vertical plane. The invention particularly proposes that the insulator establishes a thermally conductive connection with the support frame, and the support frame is cooled by a cooling member. The insulator can also be overlapped by the edges of the mask. However, the thermal separation between the heating frame and the mask frame can also be achieved through the gap between the mask frame and the heating frame. In this case, the faces of the heating frame and the mask frame facing each other may also be highly gloss coated and / or polished, so that these faces have the smallest reflection coefficient. It is also possible that the outer edge of the mask extends at least partially through the insulator. The mask can extend to the outer edge of the mask frame. With the appropriate selection of the components for thermal separation, a lateral temperature gradient is achieved on the outer edge of the masking device, which is changed after each coating step, but not necessarily, where, In the radially outward position, the temperature of the masking device is higher than the condensation temperature. However, the slope of the temperature gradient is sufficiently large so that the surface temperature of the mask is sufficiently lower than the condensation temperature over the entire range of the mask surface.
本發明還有關於一種在使用前述裝置之情況下將層沉積的方法,其中,對該遮罩框架進行調溫,使得其溫度低於凝結溫度,以及,對該加熱框架進行調溫,使得其溫度高於蒸汽之凝結溫度。形成一溫度梯度,其中凝結溫度之位置落在位於遮罩框架與加熱框架之間的區域內。該冷凝點較佳位於該絕緣構件之區域內、特別是該絕緣體之區域內。 The invention also relates to a method for depositing a layer using the aforementioned device, wherein the mask frame is temperature-controlled so that its temperature is lower than the condensation temperature, and the heating frame is temperature-controlled so that it The temperature is higher than the condensation temperature of steam. A temperature gradient is formed in which the location of the freezing temperature falls in the area between the mask frame and the heating frame. The condensation point is preferably located in the region of the insulating member, especially in the region of the insulator.
該遮罩框架較佳在一水平平面中沿周邊線延伸,使得該基板支架被遮罩框架圍繞。該遮罩之邊緣係固定於該遮罩框架上。該遮罩框架可為被矩形加熱框架包圍之矩形框架。 The mask frame preferably extends along a peripheral line in a horizontal plane, so that the substrate support is surrounded by the mask frame. The edge of the mask is fixed on the mask frame. The mask frame may be a rectangular frame surrounded by a rectangular heating frame.
1‧‧‧殼體 1‧‧‧shell
2‧‧‧氣體入口構件 2‧‧‧Gas inlet member
3‧‧‧蒸汽饋送口 3‧‧‧Steam feed port
4‧‧‧排氣面 4‧‧‧ exhaust surface
5‧‧‧排氣口 5‧‧‧ exhaust port
6‧‧‧調溫通道 6‧‧‧Temperature channel
7‧‧‧遮罩裝置 7‧‧‧Mask device
8‧‧‧遮罩 8‧‧‧Mask
8'‧‧‧邊緣 8'‧‧‧ edge
9‧‧‧遮罩開口 9‧‧‧Mask opening
10‧‧‧遮罩框架 10‧‧‧Mask frame
11‧‧‧絕緣體 11‧‧‧ insulator
12‧‧‧遮蔽板 12‧‧‧shield
12'‧‧‧反射面 12'‧‧‧Reflective surface
12"‧‧‧反射面 12 "‧‧‧Reflective surface
13‧‧‧中間腔 13‧‧‧ Intermediate cavity
14‧‧‧間隔元件 14‧‧‧ spacer element
15‧‧‧絕緣層 15‧‧‧ Insulation
16‧‧‧連接片 16‧‧‧Connector
18‧‧‧加熱構件 18‧‧‧ heating element
19‧‧‧沉積室 19‧‧‧ Deposition chamber
20‧‧‧基板 20‧‧‧ substrate
21‧‧‧基板支架 21‧‧‧ substrate holder
22‧‧‧調溫通道 22‧‧‧Temperature channel
23‧‧‧支承框架 23‧‧‧ support frame
24‧‧‧調溫通道 24‧‧‧Temperature channel
25‧‧‧加熱框架 25‧‧‧Heating frame
25'‧‧‧側面 25'‧‧‧ side
26‧‧‧絕緣間隙 26‧‧‧Insulation gap
27‧‧‧間隙 27‧‧‧ Clearance
28‧‧‧加熱區 28‧‧‧ heating zone
下面結合實施例對本發明進行詳細說明。附圖係粗略示意圖,並非按比例繪製,僅用作闡釋,其中:圖1為用於沉積一或數個OLED層之反應器之殼體1的橫截面圖,圖2為在第一實施例中,圖1中之局部Ⅱ的放大圖,圖3為第二實施例之根據圖2的示意圖,圖4為在第二實施例中,根據圖1中之線Ⅳ-Ⅳ的截面圖,圖5為第三實施例之根據圖2的示意圖,圖6為第四實施例之根據圖2的示意圖,圖7為第五實施例之根據圖2的示意圖,圖7a為在圖7中用Ⅶa表示的片段,圖8為第六實施例之根據圖2的示意圖,圖9為第七實施例之根據圖2的示意圖。 The present invention is described in detail below with reference to the embodiments. The drawings are rough schematic diagrams, not drawn to scale, and are used for illustration only, wherein: FIG. 1 is a cross-sectional view of a housing 1 of a reactor for depositing one or several OLED layers, and FIG. 2 is a first embodiment 1 is an enlarged view of part II in FIG. 1, FIG. 3 is a schematic view according to FIG. 2 of the second embodiment, and FIG. 4 is a cross-sectional view according to the line IV-IV in FIG. 1 in the second embodiment. 5 is a schematic diagram of the third embodiment according to FIG. 2, FIG. 6 is a schematic diagram of the fourth embodiment according to FIG. 2, FIG. 7 is a schematic diagram of the fifth embodiment according to FIG. 2, and FIG. FIG. 8 is a schematic diagram of the sixth embodiment according to FIG. 2, and FIG. 9 is a schematic diagram of the seventh embodiment according to FIG. 2.
在圖1中僅示例性示出之殼體具有氣密的壁部,其係構建成使得殼體內部係可抽真空。在殼體1之內部設有氣體入口構件2,其具有氣體分配腔,透過蒸汽饋送口3對該氣體分配腔進行饋氣。透過蒸汽饋送口3將經諸如稀有氣體或H2或N2之載氣輸送之有機蒸汽饋送入氣體入口構件2。氣體入口構件2具有底板,其構成面向製程室19的排氣面4。排氣面4具有數個呈蓮蓬頭狀佈置的排氣口5,蒸汽能夠透過此等排氣口自氣體入口構件2進入製程室19。該具有排氣口5之排氣板具有調溫通道6,調溫介質特別是能夠透過該等調溫通道流入,用以將氣體入口構件2以及特別是面向製程室19之排氣面4加熱至高於蒸汽之凝結溫度的溫度。例如可以將流經導熱體的電流用作調溫介質。 The housing shown only by way of example in FIG. 1 has an air-tight wall, which is constructed so that the interior of the housing can be evacuated. A gas inlet member 2 is provided inside the casing 1 and has a gas distribution cavity, and the gas distribution cavity is fed through the steam feed port 3. Organic steam transported via a carrier gas such as a rare gas or a carrier gas such as H 2 or N 2 is fed into the gas inlet member 2 through the steam feed port 3. The gas inlet member 2 has a bottom plate that constitutes an exhaust surface 4 that faces the process chamber 19. The exhaust surface 4 has a plurality of exhaust ports 5 arranged in a shower head shape, through which steam can enter the process chamber 19 from the gas inlet member 2. The exhaust plate with the exhaust port 5 has a temperature-adjusting channel 6 through which the temperature-adjusting medium can flow in, for heating the gas inlet member 2 and the exhaust surface 4 facing the process chamber 19 in particular. To temperatures above the condensation temperature of steam. For example, the current flowing through the heat conductor can be used as a temperature control medium.
此外,圍繞氣體入口構件2設有加熱區28。該加熱區在此為加熱框架,藉由適宜的調溫介質(例如調溫液)抑或電氣加熱將該加熱框架保持在高於蒸汽之凝結溫度的溫度。 Furthermore, a heating zone 28 is provided around the gas inlet member 2. The heating zone is a heating frame, which is maintained at a temperature higher than the condensation temperature of steam by a suitable temperature-controlling medium (such as a temperature-control liquid) or electrical heating.
在氣體入口構件2下方設有基板支架21,其實質上在排氣面4之整個面的範圍內延伸。針對貼靠於基板支架21上之基板20的支承面的尺寸可處於平方公尺範圍內或更大。但該表面亦可小於1m2,例如處於0.04m2的範圍內。需要將饋送入製程室19之蒸汽以經側向結構化的方式沉積在基板20上。這透過凝結實現,因而設有冷卻構件22,藉由該等冷卻構件將針對基板支架21之基板20的支承面冷卻至低於蒸汽之沉積溫度的溫度。在氣體入口構件2或加熱區28之溫度大於100℃、150℃或200℃的情況下,該基板支承面之溫度小於0℃、10℃或20℃。該基板支承面之溫度亦可小於100℃。該基板支承面之溫度通常為20℃。 A substrate holder 21 is provided below the gas inlet member 2 and extends substantially over the entire surface of the exhaust surface 4. The size of the supporting surface of the substrate 20 abutting on the substrate holder 21 may be in the range of square meters or larger. However, the surface may also be less than 1m 2, for example, in a range of 0.04m 2. The steam fed into the process chamber 19 needs to be deposited on the substrate 20 in a laterally structured manner. This is achieved by condensation, and therefore, cooling members 22 are provided, by which the supporting surface of the substrate 20 for the substrate holder 21 is cooled to a temperature lower than the deposition temperature of steam. In the case where the temperature of the gas inlet member 2 or the heating zone 28 is greater than 100 ° C, 150 ° C, or 200 ° C, the temperature of the substrate supporting surface is less than 0 ° C, 10 ° C, or 20 ° C. The temperature of the substrate supporting surface may be less than 100 ° C. The temperature of the substrate supporting surface is usually 20 ° C.
為了對待沉積至基板20之層進行側向結構化,設有遮罩裝置7。遮罩裝置7由將基板支架21包圍的遮罩框架10構成。遮罩支架10承載由因鋼製成之遮罩,其為具有10μm至100μm的材料厚度的薄膜。該遮罩具有數個規則佈置的遮罩開口9並且充當陰影遮罩。遮罩8之邊緣區域8'係固定於遮罩框架10上,使得遮罩8在自基板20分離的狀態下僅最小程度地下垂。 In order to structure the layers to be deposited on the substrate 20 laterally, a masking device 7 is provided. The mask device 7 is composed of a mask frame 10 that surrounds a substrate holder 21. The mask holder 10 carries a mask made of steel, which is a film having a material thickness of 10 μm to 100 μm. This mask has several regularly arranged mask openings 9 and acts as a shadow mask. The edge region 8 ′ of the mask 8 is fixed to the mask frame 10 so that the mask 8 hangs down to a minimum degree in a state separated from the substrate 20.
遮罩框架10被支承框架23承載。支承框架23為此具有一支承面,其具有至少若干區段,在該等區段上平面式地抵靠有遮罩框架10之區段,故可發生熱傳遞。因此,可為實心、但亦可由管件構成之遮罩框架10的底側至少局部地以平面式以及熱傳遞方式貼靠在支承框架23上。支承框架23具有調溫介質,用以將支承框架23冷卻。為此,在圖式中示出調溫通道24,其可供調溫介質流過。在此採用之調溫介質可與流經基板支架21之調溫通道22的調溫介質為同一種。 The mask frame 10 is carried by the support frame 23. The support frame 23 has a support surface for this purpose, which has at least several sections on which the sections of the shield frame 10 are abutted flatly, so that heat transfer can take place. Therefore, the bottom side of the mask frame 10, which may be solid, but may also be composed of a pipe, bears against the support frame 23 at least partially in a planar manner and a heat transfer manner. The support frame 23 has a temperature control medium for cooling the support frame 23. For this purpose, a temperature control channel 24 is shown in the drawing, through which a temperature control medium can flow. The temperature-adjusting medium used here may be the same as the temperature-adjusting medium flowing through the temperature-adjusting channel 22 of the substrate holder 21.
遮罩裝置7係被加熱框架25包圍。加熱框架25係可藉由調溫介質加熱至高於200℃的溫度。為此在圖式中示出調溫通道形式的加熱構件18,其可供加熱介質流過。但特別是為了將排氣面4加熱,在此亦可採用以下方案:以電氣方式輸送加熱能量,故調溫介質為加熱絲。 The masking device 7 is surrounded by a heating frame 25. The heating frame 25 can be heated to a temperature higher than 200 ° C by a temperature control medium. For this purpose, a heating element 18 in the form of a temperature control channel is shown in the drawing, which allows a heating medium to flow through. However, in particular, in order to heat the exhaust surface 4, the following scheme can also be adopted here: The heating energy is electrically transmitted, so the temperature-adjusting medium is a heating wire.
根據本發明,將遮罩裝置7包圍之加熱框架25係與遮罩框架10熱分離。加熱框架25與在水平平面中延伸之遮罩裝置7處於同一垂直高度上。加熱框架25之側面25'構成間隙26之壁部。在如圖2所示之實施例中,間隙26之相對的壁部由遮罩框架10之一側面構成。故間隙26構成絕緣構件。該二面向彼此之間隙壁部特別是可 採用具備高度光澤的實施方案,例如經過鍍金及/或拋光。但該層之發射係數毋需小於0.04。 According to the present invention, the heating frame 25 surrounded by the mask device 7 is thermally separated from the mask frame 10. The heating frame 25 is at the same vertical height as the masking device 7 extending in a horizontal plane. The side surface 25 ′ of the heating frame 25 constitutes a wall portion of the gap 26. In the embodiment shown in FIG. 2, the opposite wall portion of the gap 26 is formed by one side of the mask frame 10. Therefore, the gap 26 constitutes an insulating member. In particular, the two-face-to-face gap walls can be implemented with a highly glossy embodiment, such as gold-plated and / or polished. However, the emission coefficient of this layer need not be less than 0.04.
在示出第二實施例的圖3中,用元件符號11表示絕緣體。此絕緣體11可具有不同的技術方案。其用於將加熱框架25與遮罩框架10熱分離。絕緣體11位於加熱框架25與遮罩框架10之間,使得在絕緣體11內形成溫度梯度。絕緣體11之導熱性係最小化,使得自加熱框架25至遮罩框架10的熱流最小化。 In FIG. 3 showing the second embodiment, an insulator is indicated by an element symbol 11. The insulator 11 may have different technical solutions. It is used to thermally separate the heating frame 25 from the mask frame 10. The insulator 11 is located between the heating frame 25 and the mask frame 10 so that a temperature gradient is formed in the insulator 11. The thermal conductivity of the insulator 11 is minimized, so that the heat flow from the heating frame 25 to the mask frame 10 is minimized.
遮罩8之外邊緣8'可沿垂直方向位於遮罩框架10上方。但邊緣8'亦可僅延伸經過遮罩框架10,使得絕緣體11不僅將遮罩框架10、亦將遮罩8包圍。但亦可採用在圖3中用虛線示出的方案:遮罩邊緣8'延伸至經過絕緣體11。該遮罩邊緣亦可與絕緣體11之外邊緣重合。如此便能將絕緣體11遮蓋,以實現遮罩8之邊緣區段之整體性。 The outer edge 8 ′ of the mask 8 may be located above the mask frame 10 in a vertical direction. However, the edge 8 ′ may only extend through the mask frame 10 so that the insulator 11 not only surrounds the mask frame 10 but also the mask 8. However, the solution shown in dashed lines in FIG. 3 can also be used: the mask edge 8 ′ extends through the insulator 11. The edge of the mask may also coincide with the outer edge of the insulator 11. In this way, the insulator 11 can be covered to achieve the integrity of the edge section of the mask 8.
在絕緣體11與基板支架21之間可設有另一間隙27。 Another gap 27 may be provided between the insulator 11 and the substrate holder 21.
圖5示出本發明之第三實施例,其中絕緣體11係由數個在垂直平面中延伸之遮蔽板12構成。藉由間隔元件14以相互間隔一定距離的方式將遮蔽板12保持。該等遮蔽板之相互背離的表面12'、12"較佳具有高反射性。該等表面特別是經金屬包覆,並且尤佳經過鍍金,使得其發射係數較佳小於0.04。 FIG. 5 shows a third embodiment of the present invention, in which the insulator 11 is composed of a plurality of shielding plates 12 extending in a vertical plane. The shielding plate 12 is held by the spacer element 14 at a certain distance from each other. The mutually facing surfaces 12 ', 12 "of these shielding plates preferably have high reflectivity. These surfaces are especially coated with metal and particularly preferably plated with gold, so that their emission coefficients are preferably less than 0.04.
在如圖8所示之第四實施例中,以材料單一的方式藉由遮罩框架10構成遮蔽板12。其中,遮罩框架10可由實心的金屬體構成,在該金屬體中銑削出若干凹槽,從而形成梳狀橫截面。其中,梳齒由遮蔽板12構成。在此情形下,遮蔽板之面向彼此的表面12'、12"亦可經高度光澤塗佈。在如圖6所示之第四實施例中,構成遮蔽 板承載區段16之連接片位於下方。 In the fourth embodiment shown in FIG. 8, the shielding plate 12 is constituted by the mask frame 10 in a single material manner. The mask frame 10 may be composed of a solid metal body, and a plurality of grooves are milled in the metal body to form a comb-shaped cross section. Among them, the comb teeth are constituted by the shielding plate 12. In this case, the mutually facing surfaces 12 ', 12 "of the shielding plate may also be coated with a high gloss. In the fourth embodiment shown in FIG. 6, the connecting piece constituting the shielding plate bearing section 16 is located below .
在如圖7所示之第五實施例中,遮蔽板承載區段16位於上方,且在此亦可被遮罩8搭接。 In the fifth embodiment as shown in FIG. 7, the shielding plate carrying section 16 is located above, and can also be overlapped by the shielding 8 here.
在如圖8所示之第六實施例中,遮蔽板12之間的空間係被絕緣材料填滿,該絕緣材料具有較低的導熱係數。在此情形下,遮罩8之邊緣8'亦延伸至絕緣體11之最外側邊緣。 In the sixth embodiment shown in FIG. 8, the space between the shielding plates 12 is filled with an insulating material, which has a lower thermal conductivity. In this case, the edge 8 ′ of the mask 8 also extends to the outermost edge of the insulator 11.
在如圖9所示之第七實施例中,遮蔽板12之間的空間亦被絕緣構件15填滿。但在此情形下,遮罩8之邊緣8'不延伸經過絕緣體11,而是沿垂直方向在遮罩框架10上方終止。 In the seventh embodiment shown in FIG. 9, the space between the shielding plates 12 is also filled with the insulating member 15. However, in this case, the edge 8 ′ of the mask 8 does not extend through the insulator 11, but terminates above the mask frame 10 in a vertical direction.
前述遮蔽板12在平行位置中並排佈置。較佳設有至少2、3、4或5個遮蔽板12,其以在垂直平面中延伸的方式平行且並排佈置。遮蔽板12可由金屬構成。該等遮蔽板可具有最小材料厚度,並且由經高度光澤塗佈之金屬膜構成。但亦可製造具有較大之材料厚度的遮蔽板12,使得遮蔽板具有足夠的形狀穩定性。此外採用以下方案:經塗佈之遮蔽板12係由導熱性較差之材料、特別是導熱性較差之金屬構成。在此亦可採用發泡金屬。 The aforementioned shielding plates 12 are arranged side by side in a parallel position. Preferably, at least 2, 3, 4 or 5 shielding plates 12 are provided, which are arranged parallel and side by side in such a way as to extend in a vertical plane. The shielding plate 12 may be made of metal. These shielding plates can have a minimum material thickness and consist of a highly glossy coated metal film. However, the shielding plate 12 having a larger material thickness can also be manufactured, so that the shielding plate has sufficient shape stability. In addition, the following scheme is adopted: The coated shielding plate 12 is composed of a material with poor thermal conductivity, especially a metal with poor thermal conductivity. Foamed metal can also be used here.
若在遮蔽板12之間設有絕緣層15,則絕緣層15亦可由金屬、例如金屬泡沫構成。但絕緣層15亦可由另一材料、例如礦物材料或塑膠構成。 If an insulating layer 15 is provided between the shielding plates 12, the insulating layer 15 may be made of metal, for example, metal foam. However, the insulating layer 15 can also be made of another material, such as a mineral material or plastic.
藉由本發明之措施實現以下方案:在將該遮罩裝置應用於前述裝置中時,以及在沉積OLED的方法中,遮罩裝置之溫度僅在界定得較窄的溫度範圍內變化。本發明特別是提出:遮罩8在其整個延伸範圍內僅最小程度地側向膨脹。 By the measures of the present invention, when the mask device is applied to the foregoing device, and in the method of depositing OLED, the temperature of the mask device changes only within a narrowly defined temperature range. In particular, the invention proposes that the mask 8 only expands laterally to a minimum extent over its entire extension.
該用於將加熱框架25與遮罩框架10熱分離的構件可 採用某種佈置及設計方案,從而如此實施該塗佈法,使得該遮罩裝置之外邊緣區域的溫度高於蒸汽之凝結溫度。本發明特別是提出:在該塗佈法中,在絕緣體11內實現一溫度梯度,其中,絕緣體11之背離遮罩框架10的外邊緣上的溫度高於蒸汽之凝結溫度,以及,絕緣體11之面向遮罩框架10的邊緣上的溫度低於蒸汽之凝結溫度。因此,基板之相鄰環境的所有在OLED層之沉積期間的溫度低於蒸汽之凝結溫度的組成部分皆與遮罩裝置7對應,並可在沉積一或數個層後更換。 The component for thermally separating the heating frame 25 and the mask frame 10 may adopt a certain arrangement and design scheme, so that the coating method is implemented so that the temperature of the outer edge region of the mask device is higher than the condensation temperature of steam . The invention particularly proposes that in this coating method, a temperature gradient is achieved in the insulator 11, wherein the temperature of the outer edge of the insulator 11 facing away from the mask frame 10 is higher than the condensation temperature of steam, and the temperature of the insulator 11 The temperature on the edge facing the mask frame 10 is lower than the condensation temperature of the steam. Therefore, all the components of the adjacent environment of the substrate during the deposition of the OLED layer that have a temperature lower than the condensation temperature of the steam correspond to the mask device 7 and can be replaced after one or several layers are deposited.
特別是透過以下方式簡化遮罩更換:遮罩框架10與絕緣體11皆不藉由冷卻構件冷卻。但亦可採用以下方案:藉由調溫介質將遮罩框架10及/或絕緣體11冷卻。 In particular, the mask replacement is simplified by the fact that neither the mask frame 10 nor the insulator 11 is cooled by a cooling member. However, the following solution may also be adopted: the mask frame 10 and / or the insulator 11 are cooled by a temperature-regulating medium.
較佳將因鋼或另一熱膨脹係數特別是在0℃至120℃之溫度範圍內最小化或至少部分消失的材料用作針對遮罩8的材料。該用於製造遮罩框架的材料可為散裝材料、層系統、化合物、包含基質的纖維材料、碳纖維材料或其他材料系統。該纖維增強材料特別是可具有各向異性熱膨脹特性。在一空間方向上的熱膨脹可小於1ppm。在另一方向、例如垂直方向上的熱膨脹可更高。 It is preferable to use as the material for the mask 8 a material which is minimized or at least partially disappeared due to steel or another thermal expansion coefficient, particularly in a temperature range of 0 ° C to 120 ° C. The material used to make the mask frame may be a bulk material, a layer system, a compound, a matrix-containing fiber material, a carbon fiber material, or other material system. The fiber-reinforced material may particularly have anisotropic thermal expansion characteristics. Thermal expansion in a spatial direction may be less than 1 ppm. Thermal expansion can be higher in another direction, such as in the vertical direction.
本發明還提出:絕緣體11係整合在遮罩裝置7中。此外,絕緣體11可被遮罩8遮蓋。透過使用絕緣體11,可用因鋼以外的材料製造遮罩框架10。特別是用前述具有各向異性熱膨脹特性的材料來製造該遮罩框架。絕緣體11特別是可為框架狀主體,其構成將遮罩框架10環繞的絕緣構件。遮蔽板12構成遮熱板裝置,其特別是固定於遮罩框架10上。但該遮熱板裝置亦可固定於加熱框架25上。 The invention also proposes that the insulator 11 is integrated in the mask device 7. In addition, the insulator 11 may be covered by a mask 8. By using the insulator 11, the mask frame 10 can be made of a material other than steel. In particular, the mask frame is made of the aforementioned material having anisotropic thermal expansion characteristics. The insulator 11 may be a frame-shaped body, which is an insulating member that surrounds the mask frame 10. The shield plate 12 constitutes a heat shield device, which is particularly fixed to the shield frame 10. However, the heat shielding plate device may be fixed on the heating frame 25.
前述實施方案係用於說明本申請整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案,其中,亦可將此等特徵組合中的兩個、數個或所有相互組合,亦即:一種裝置,其特徵在於:遮罩框架10係被經加熱構件18加熱之加熱框架25包圍,並且係與加熱框架25熱分離。 The foregoing embodiments are used to describe the inventions included in the present application as a whole. These inventions independently constitute an improvement scheme relative to the prior art through at least the following feature combinations. Among them, two or more of these feature combinations can also be used. Or all of them are combined with each other, that is, a device characterized in that the mask frame 10 is surrounded by the heating frame 25 heated by the heating member 18 and is thermally separated from the heating frame 25.
一種裝置,其特徵在於:在遮罩框架10與加熱框架25之間設有熱絕緣構件11、26。 A device characterized in that thermal insulation members 11 and 26 are provided between the mask frame 10 and the heating frame 25.
一種裝置,其特徵在於:該絕緣構件具有絕緣體11、特別是框架狀絕緣體11。 A device is characterized in that the insulating member has an insulator 11, particularly a frame-shaped insulator 11.
一種裝置,其特徵在於:絕緣體11具有若干遮蔽板12,其具有面向加熱框架25及/或遮罩框架10的反射面12'、12"。 A device is characterized in that the insulator 11 has a plurality of shielding plates 12 having reflecting surfaces 12 ′, 12 ″ facing the heating frame 25 and / or the shielding frame 10.
一種裝置,其特徵在於:反射面12'、12"具有高反射性,以及/或者,遮蔽板12具有較低的導熱性。 A device characterized in that the reflective surfaces 12 ', 12 "have high reflectivity and / or the shielding plate 12 has low thermal conductivity.
一種裝置,其特徵在於:遮蔽板12係以材料單一的方式由絕緣體11構成,並且特別是在橫截面中呈梳狀地自遮蔽板承載區段伸出。 A device is characterized in that the shielding plate 12 is composed of the insulator 11 in a single material manner, and particularly projects from the shielding plate bearing section in a comb-like manner in cross section.
一種裝置,其特徵在於:絕緣體11具有多層結構,其中,該等層在橫向於基板支架21或加熱框架25之延伸平面的方向上延伸。 A device is characterized in that the insulator 11 has a multilayer structure, wherein the layers extend in a direction transverse to the extending plane of the substrate holder 21 or the heating frame 25.
一種裝置,其特徵在於:絕緣體11係以材料單一的方式與遮罩框架10及/或與加熱框架25連接。 A device is characterized in that the insulator 11 is connected to the mask frame 10 and / or the heating frame 25 in a single material manner.
一種裝置,其特徵在於:遮罩框架10貼靠在可藉由冷卻構件冷卻之支承框架23上。 A device is characterized in that the mask frame 10 abuts on a support frame 23 that can be cooled by a cooling member.
一種裝置,其特徵在於可經加熱構件加熱之氣體入口構件2,其沿垂直方向佈置在基板支架21上方並且實質上在基板支架21之整個面的範圍內延伸,其中,圍繞氣體入口構件2特別是設有第二加熱框架28。 A device characterized by a gas inlet member 2 that can be heated by a heating member, which is arranged above the substrate holder 21 in a vertical direction and extends substantially over the entire surface of the substrate holder 21, wherein the gas inlet member 2 surrounds It is provided with a second heating frame 28.
一種裝置,其特徵在於:該等加熱構件能夠將包圍遮罩框架10的加熱框架25加熱至至少100℃、150℃或200℃的溫度,以及/或者,該冷卻構件能夠將遮罩框架10冷卻至最大0℃、10℃、20℃或100℃的溫度。 A device characterized in that the heating members can heat the heating frame 25 surrounding the mask frame 10 to a temperature of at least 100 ° C, 150 ° C, or 200 ° C, and / or the cooling member can cool the mask frame 10 To a maximum temperature of 0 ° C, 10 ° C, 20 ° C or 100 ° C.
一種裝置,其特徵在於:該等熱絕緣構件係固定於遮罩框架10上,以及/或者,遮罩8之邊緣8'至少部分地延伸經過該熱絕緣構件。 A device characterized in that the thermal insulation members are fixed on the mask frame 10 and / or the edge 8 'of the mask 8 extends at least partially through the thermal insulation member.
一種方法,其特徵在於:將加熱框架25調節至高於蒸汽之凝結溫度的溫度,以及,將遮罩框架10冷凝至低於蒸汽之凝結溫度的溫度,其中,加熱框架25與遮罩框架10之間的溫度梯度透過絕緣構件11、26延伸,使得該凝結溫度的位置位於絕緣構件11、26內。 A method characterized by adjusting the heating frame 25 to a temperature higher than the condensation temperature of steam, and condensing the mask frame 10 to a temperature lower than the condensation temperature of steam, wherein the heating frame 25 and the mask frame 10 The temperature gradient between them extends through the insulating members 11 and 26 so that the position of the condensation temperature is located in the insulating members 11 and 26.
所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項(即便在無經援引之請求項之特徵的情況下)以其特徵對本發明針對先前技術之改良方案的特徵予以說明,其目的主要在於在該等請求項基礎上進行分案申請。此外,在每個請求項中給出之發明可具有在前文中特別是用元件符號表示及/或在符號說明中給出之特徵中的一或多個。本發明亦有關於實施 方式,其中未實現前述特徵中的個別特徵,特別是在此等特徵對於具體用途而言顯然多餘或可被技術上等效之手段替代的情況下。 All the disclosed features (as a single feature or a combination of features) are the essence of the invention. Therefore, the disclosure content of this application also includes all the content disclosed in the related / attached priority files (copy of the previous application), and the features described in these files are also included in the scope of patent application of this application. Ancillary items (even in the absence of the characteristics of the claimed items cited) use their characteristics to describe the characteristics of the present invention's improvement schemes to the prior art, and the main purpose is to make a divisional application based on these items. In addition, the invention given in each claim may have one or more of the features previously indicated, in particular by the symbol of the element and / or in the description of the symbol. The present invention also pertains to embodiments in which individual features of the foregoing features are not achieved, especially where such features are obviously redundant for a particular use or can be replaced by a technically equivalent means.
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| JP2004269968A (en) * | 2003-03-10 | 2004-09-30 | Sony Corp | Evaporation mask |
| JP2005044592A (en) * | 2003-07-28 | 2005-02-17 | Toyota Industries Corp | Vapor deposition mask, film formation method using the vapor deposition mask, and film formation apparatus using the vapor deposition mask |
| EP2190263B1 (en) * | 2007-09-10 | 2013-03-20 | Ulvac, Inc. | Process for producing thin organic film |
| KR101060652B1 (en) * | 2008-04-14 | 2011-08-31 | 엘아이지에이디피 주식회사 | Organic material deposition apparatus and deposition method using the same |
| DE102010000447A1 (en) * | 2010-02-17 | 2011-08-18 | Aixtron Ag, 52134 | Coating device and method for operating a coating device with a screen plate |
| WO2012053532A1 (en) * | 2010-10-20 | 2012-04-26 | 株式会社アルバック | Apparatus for organic film formation and method for organic film formation |
| JP5848822B2 (en) | 2011-06-22 | 2016-01-27 | アイクストロン、エスイー | Vapor deposition system and supply head |
| JP2014065936A (en) * | 2012-09-25 | 2014-04-17 | Canon Tokki Corp | Vapor deposition apparatus, and vapor deposition method |
| DE102013101586A1 (en) | 2013-02-18 | 2014-08-21 | Aixtron Se | Shadow mask attachable on substrate in process chamber of chemical vapor deposition reactor, in which vertical temperature gradient is formed, comprises mask body whose height dimension is less than its surface extension and window |
| DE102014116991A1 (en) | 2014-11-20 | 2016-05-25 | Aixtron Se | CVD or PVD reactor for coating large-area substrates |
| KR101693788B1 (en) * | 2015-06-17 | 2017-01-09 | 주식회사 에스에프에이 | Mask frame assembly and apparatus for depositing thin film having the same |
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