TW201911603A - Micro device integration into system substrate - Google Patents

Abstract

This disclosure is related to post processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structure such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. In another example, dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with the transferred micro devices. In another example, color conversion layers are integrated into the system substrate to create different output from the micro devices.

Description

Micro device integrated in system substrate

The present invention relates to the integration of a transferred microdevice system onto an acceptor substrate. More specifically, the present invention relates to a processing step for enhancing the performance of a microdevice after transfer to an acceptor substrate, including development of an optical structure, integration of a photovoltaic thin film device, addition of a color conversion layer, and application of a donor Proper patterning of the devices on the substrate.

It is an object of the present invention to overcome the shortcomings of the prior art by providing a light emitting micro device and a thin film photovoltaic device integrated on a same receptor substrate.

Accordingly, the present invention is directed to an integrated optical system that includes a plurality of pixels, each of which includes:

a receptor substrate;

a luminescent microdevice integrated on the acceptor substrate;

a planarization or embankment region surrounding the microdevice; and

A thin film light-emitting photovoltaic device, at least a portion of which is mounted on the planarization or embankment region.

CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Patent Application Serial No. No. No. No. No. No. No.

Although the present teachings are described in connection with various embodiments and examples, it is not intended that the present teachings be limited to such embodiments. Instead, it will be appreciated by those skilled in the art that the present teachings cover various alternatives and equivalents.

A process for generating a system based on a microdevice includes: pretreating a device on a donor substrate (or a temporary substrate); transferring the micro device from the donor substrate to the acceptor substrate; and post processing to achieve device functionality. The pre-processing step can include patterning and adding bonding elements. The transfer procedure can involve bonding a pre-selected array of microdevices to the acceptor substrate, followed by removal of the donor substrate. Several different selective transfer procedures have been generated for micro devices. After the micro device is integrated into the receiving substrate, additional post processing can be performed to make the desired functional connection.

In the present invention, a transmitting device is used to describe different integration and post-processing methods. However, those skilled in the art will appreciate that other devices, such as sensors, can be used in such embodiments. For example, in the case of a sensor microdevice, the optical path will be similar to the transmitting micro device, but in the opposite direction.

Some embodiments of the invention relate to processing steps for improving the performance of a microdevice. For example, in some embodiments, a micro device array can include a micro light emitting diode (LED), an organic LED, a sensor, a solid state device, an integrated circuit, a (microelectromechanical system) MEMS, and/or other electronic components. The receiving substrate may be, but not limited to, a printed circuit board (PCB), a thin film transistor substrate, an integrated circuit substrate, or (in one case of an optical micro device (such as an LED)) one component of a display (eg, a driving circuit) Base plate). In such embodiments, in addition to interconnecting the micro devices, additional processing (eg, reflective layers, fillers, black matrices, or other layers) may be used to post-process steps to improve the output coupling of the resulting LED light. In another example, a dielectric layer and a metal layer can be used to integrate a photovoltaic thin film device and a transferred micro device into a system substrate.

In one embodiment, the active area of the pixel (or sub-pixel) is extended to be larger than the microdevice by using a filler (or dielectric). Here, the filler is patterned to define the active area of the pixel (the active area is the area that emits light or absorbs input light). In another embodiment, a reflective layer is used to confine light within the active area.

In an embodiment, the reflective layer can be one of the micro device electrodes.

In another embodiment, the active area may include several sub-pixels or pixels.

The size of the active area can be larger, smaller, or the same as the pixel (sub-pixel) area.

In another embodiment, the thin film optoelectronic device is deposited in the acceptor substrate after the micro device is integrated into the acceptor substrate.

In one embodiment, an optical path is generated for the microdevice to emit (absorb) light through all or some of the layers of the optoelectronic device.

In another embodiment, the optical path of the microdevice does not pass through all or some of the layers of the optoelectronic device.

In one embodiment, the optoelectronic device is a thin film device.

In another embodiment, the electrodes of the optoelectronic device are used to define the active area of the pixel (or sub-pixel).

In another embodiment, at least one optoelectronic device electrode is shared with the micro device electrode.

In one embodiment, the color conversion material covers the surface and partially (or completely) surrounds the body of the microdevice.

In one embodiment, the bank structure separates the color conversion material.

In another embodiment, the color conversion material covers the surface (and/or partially or completely) covering the active area (the body).

In one embodiment, the microdevices on the donor substrate are patterned to match the array structure in the receptor (system) substrate. In this case, all of the devices in part (or all) of the donor substrate are transferred to the acceptor substrate.

In another embodiment, a via (VIA) is created in the donor substrate to couple the microdevice on the donor substrate to the acceptor substrate.

In another embodiment, the donor substrate has more than one micro device type and in at least one direction, the pattern of the micro device type on the donor substrate partially or completely matches the pattern of corresponding regions (or pads) on the system substrate.

In another embodiment, the donor substrate has more than one micro device type and in at least one direction, the pitch between different micro device types in the donor substrate is the corresponding region (or pad) segment on the system substrate One multiple of the distance.

In another embodiment, the donor substrate has more than one micro device type. In at least one direction, the pitch between two different microdevices matches the pitch of the corresponding region (or pad) on the receptor (or system) substrate.

In one embodiment, the pattern of different micro device types on the donor substrate produces a two dimensional array of each type, wherein the pitch between the arrays of different types matches the pitch of the corresponding regions on the system substrate.

In another embodiment, the pattern of different micro device types on the donor substrate produces a one-dimensional array in which the pitch of the array matches the pitch of corresponding regions (or pads) on the system substrate.

1 shows an acceptor substrate 100, contact pads 101a and 101b, and microdevices 102a and 102b that are attached to an array of acceptor substrates 100. The contact pads 101a and 101b to which the microdevices 102a and 102b have been transferred are positioned in an array parallel to the acceptor substrate 100 and mounted on the acceptor substrate 100. Microdevices 102a and 102b are transferred from a donor substrate and bonded to contact pads 101a and 101b. Microdevices 102a and 102b can be any microdevice that can be manufactured in a flat batch, including but not limited to LEDs, OLEDs, sensors, solid state devices, integrated circuits, MEMS, and/or other electronic components.

As depicted in FIG. 2A, in one embodiment in which the micro devices 102a and 102b are micro-LEDs, a conformal dielectric layer 201 and a reflective layer 202 are formed over the bonded micro-LEDs 102a and 102b. In some embodiments, the conformal dielectric layer 201 is about 0.1 μm to 1 μm thick and can be deposited by any of a number of different thin film deposition techniques. The conformal dielectric layer 201 isolates the sidewalls of the micro-LEDs 102a and 102b from the reflective layer 202. Additionally, dielectric layer 201 passivates and protects the sidewalls of micro-LEDs 102a and 102b. The conformal dielectric layer 201 can also cover the top surface of the acceptor substrate 100 between adjacent micro LED devices 102a and 102b. The conformal reflective layer 202 can be deposited over the dielectric layer 201. The reflective layer 202 can be a single layer or composed of multiple layers. Various conductive materials can be used as the reflective layer 202. In some embodiments, the conformal reflective layer 202 can be a metal bilayer having one of a total thickness of up to 0.5 μm.

Referring to FIG. 2B, dielectric layer 201 and reflective layer 202 can then be patterned to partially expose the top surfaces of micro-LEDs 102a and 102b by, for example, lithographic patterning and etching. In an embodiment in which the micro-LEDs 102a and 102b are integrated in a backplane of a display system (see also FIG. 2C), a black can be formed between adjacent micro-LEDs 102a and 102b and on reflective layer 202. Matrix 203 is used to reduce the reflection of ambient light. In one example, the black matrix 203 may be a resin layer (such as polyimine or polyacrylic acid) in which particles of a black pigment such as carbon black have been dispersed. In some embodiments, the black matrix layer 203 may have a thickness of 0.01 μm to 2 μm. The black matrix layer 203 can be patterned and etched to expose the top surfaces of the micro-LEDs 102a and 102b, as shown in Figure 2C. Optionally, the thickness of the black matrix 203 can be designed to planarize the integrated substrate 100. In another embodiment, a planarization layer, which may be made of an organic insulating material, is formed and patterned to planarize the backplane substrate.

Referring to FIG. 3A, a transparent conductive layer 301 can be conformally deposited over the substrate 100 to cover the black matrix 203 and the top surfaces of the micro LEDs 102a and 102b. In some embodiments, the transparent electrode 301 can be an oxide layer of 0.1 um to 1 um thick, including but not limited to indium tin oxide (ITO) and aluminum-doped zinc oxide. In the case where one of the display structures is integrated, the transparent electrode 301 can be a common electrode of the micro LED devices 102a and 102b.

The reflective layer 202 may be used as one of the conductivity enhancers of the transparent electrode 301, as the case may be. In this case, portions of the reflective layer 202 may not be covered with a black matrix 203 or other planarization layer such that the transparent electrode layer 301 may be connected to the reflective layer 202.

In another embodiment, shown in FIG. 3B, a reflective or other type of optical component 302 can be formed on substrate 100 to enhance the output coupling of light generated by microdevices 102a and 102b. The common contact 301 is transparent to allow light to pass through this layer output. Such structures may be referred to as top emission structures.

Referring to FIG. 3C, contact pads 101a and 101b can be formed to have a concave or other shape structure to enhance the output coupling of light generated by microdevices 102a and 102b. The form of the contact pads 101a and 101b is not limited to the concave form and may have other forms depending on the light emitting characteristics of the micro device.

In an embodiment, referring to FIG. 3D, the structure is designed to output light from the substrate 100. In such bottom emission structures, substrate 100 can be transparent and common electrode 303 is designed to be reflective for better light extraction.

In another embodiment, shown in FIG. 3E, reflective layer 202 can be extended to cover microdevices 102a and 102b and also serve as a common top electrode.

Referring to FIG. 4A, in another embodiment, the dielectric layer 201 can be deposited and patterned prior to forming the reflective layer 202, which can permit a direct contact between the micro LEDs 102a and 102b and the reflective layer 202. Thus, reflective layer 202 can be used as a common top contact for micro devices 102a and 102b. A black matrix 203 or alternatively a planarization layer can be used.

Referring to FIG. 4B, in other embodiments, a common transparent electrode 301 and/or other optical layers may be deposited on top of the substrate 100 to enhance conductivity and/or light output coupling.

One of the main challenges of micro-optical devices is the empty space between adjacent micro-devices 102a and 102b. A display system having this structural characteristic produces an image artifact called "the screen door effect". In one embodiment, the micro device size can be optically extended to be the same or larger than the micro device size. In one embodiment shown in FIG. 5, after transferring the array of microdevices 102a and 102b from the donor to the acceptor substrate 100, a transparent filler 501 can be deposited and patterned to define the pixels (or sub-pixels). In one embodiment, the size of the filler 501 can be a small or largest size possible in a pixel (or sub-pixel) region. In another example, the filler 501 can be larger in size than a pixel or sub-pixel region. Filler 501 can have a shape that is different or similar to the pixel area on system substrate 100. The procedures mentioned in Figures 3 and 4 can then be applied to improve light extraction from the micro devices 102a and 102b.

Referring to FIG. 6A, in an embodiment in which pixel 601 includes two sub-pixels 601a and 601b, filler 501 is patterned to define an active area of pixel 601 (the active area is defined as the area from which the display emits light). Here, the size of the active area may be smaller, larger or the same as the pixel (sub-pixel) area. As shown in Figures 6B, 6C, and 6D, the procedures mentioned in Figures 2 and 3 can be applied. This configuration management is attributed to the discoloration at the edges of the separation between the sub-pixels 601a and 601b.

Referring to FIG. 6B, a dielectric layer 201 and a reflective layer 202 may be formed around the pixel 601.

Referring also to FIG. 6C, a black matrix 203 may be formed between adjacent pixels 601 and around each of the sub-pixels 601a and 601b to reduce reflection of ambient light.

Referring to FIG. 6D, a transparent conductive layer 301 may be deposited on top of the substrate 100 to cover the black matrix 203 and the top surfaces of the micro LEDs 601a and 601b.

In another embodiment, shown in FIG. 6E, a reflective or other optical component 602 can be formed on substrate 100 to enhance the output coupling of light generated by microdevices 601a and 601b. The common contact 301 is transparent to allow light to pass through this layer for output. Such structures may be referred to as top emission structures.

Referring to FIG. 6F, contact pads 101a and 101b can be formed to have a concave structure to enhance the output coupling of light generated by microdevices 101a and 101b. The form of the contact pads 101a and 101b is not limited to the concave form and may have other forms depending on the light emitting characteristics of the micro device.

Referring to FIG. 6G, in another embodiment, the structure is designed to output light from the substrate 100. In such bottom emission structures, substrate 100 can be transparent and common electrode 303 can include a reflective material for better light extraction.

In another embodiment, shown in FIG. 6H, reflective layer 202 can be extended to cover microdevices 601a and 602b and also serve as a common top electrode.

In other embodiments, the aforementioned pixel delimiting structure may cover more than one pixel (or sub-pixel) 601a and 601b.

In another case, a reflective layer or contact pads 101a and 101b on the receiving substrate 100 can be used to cover the receiving substrate 100 and produce a reflective region for better light output coupling prior to transferring the micro devices 601a and 601b.

In all of the foregoing embodiments, the reflective layer may also be opaque. Alternatively, the reflective layer can be used as one of the electrodes of the micro devices 601a and 601b or as one of the system substrate connections (electrodes, signals or power lines). In another embodiment, the reflective layer can be used as a touch electrode. The reflective layer can be patterned to act as a touch screen electrode. In one case, they can be patterned in the vertical and horizontal directions to form a touch screen crossing electrode. In this case, we can use a dielectric between the vertical and horizontal traces. Mixed structure

In another embodiment, a thin film optoelectronic device 904 is integrated into the acceptor substrate 100 after an array of micro devices 801 has been transferred to the acceptor substrate 100.

7 illustrates the acceptor substrate 100 and the lower electrode contacts or bond pads 702a and 702b (the array of micro devices 801 is transferred thereto or the like, and in several hybrid structure embodiments, a thin film optoelectronic device 904 is integrated therein, etc. in).

Referring to FIG. 8, one of the micro devices 801 can be transferred and bonded to the bond pads 702a of the acceptor substrate 100. In one case, as shown in FIG. 9, a dielectric layer 901 can be formed over the acceptor substrate 100 to cover the exposed electrodes 702a and 702b and any other conductive layers. The dielectric layer 901 can be patterned using lithography and etching. A conductive layer 902 is then deposited and patterned to form one of the bottom electrodes of the thin film photovoltaic device 904. If there is no risk of undesired coupling between the bottom electrode 902 and other conductive layers in the acceptor substrate 100, the dielectric layer 901 can be eliminated. However, dielectric layer 901 can also serve as a planar layer to provide better fabrication of optoelectronic device 904.

Still referring to FIG. 9, a bank layer 903 may be deposited over the acceptor substrate 100, such as over the dielectric layer 901 and the micro device 801, to cover the edges of the bottom electrode 902 and the micro device 801. A thin film photovoltaic device 904 can then be formed over the bank layer 903 and the bottom electrode 902 structure. An organic LED (OLED) device is an example of such a thin film photovoltaic device 904 that can be formed using different techniques such as, but not limited to, shadow masking, lithography, and print patterning. Finally, a top electrode 905 of one of the photovoltaic thin film devices 904 is deposited and patterned as needed.

In embodiments where the thickness of the microdevice 801 is extremely high, cracks or other structural problems may occur within the bottom electrode 902. In such embodiments, a planarization layer 903 can be used in conjunction with dielectric layer 901 or in the absence of dielectric layer 901 to address this problem.

In another embodiment, shown in FIG. 10, the microdevice 801 can have an upper device electrode 1001. Upper device electrode 1001 may be common between other micro devices 801 in or on system substrate 100. In this case, the planarization layer 901 (if present) and/or the bank structure 903 overlies the upper device electrode 1001 to insulate the upper electrode 1001 from the photo-film device 904 and the top and bottom electrodes 902, 905 to avoid optoelectronic device 904 and Any short circuit between device electrodes 1001.

Referring to FIG. 11, in one embodiment, the top electrode 905 of the thin film photovoltaic device 904 can be coupled to the micro device 801 through a bank (planarization) layer 903 and one of the openings 1005 of the photovoltaic device 904. In this case, the photo film device 904 can be selectively formed such that it does not cover the opening 1005.

In another case, the lower electrode 702a of the microdevice 801 can be shared between the thin film optoelectronic device 904 and the transferred micro device 801.

Referring to FIG. 12, in another example, the bottom electrode 902 of the thin film optoelectronic device 904 can extend over the micro device 801 such that the thin film optoelectronic device 904 can be stacked over or around the micro device 801. If the micro device 801 needs to have a transparent path through its top electrode 1001 to the outside, the bottom electrode 902 (if opaque) needs to have an opening above the micro device 801 (e.g., as shown in Figure 13A in conjunction with another embodiment). In this case, the opening may also be covered by the bank layer 903. The opening is not limited to the particular structure depicted in Figure 12 and can be produced using different methods.

Still referring to FIG. 12, if the lower electrode 702a is transparent, the micro device 801 can have a transparent path through the substrate 100. In the case where one of the transparent paths through the upper electrode 1001 is required, the bottom electrode 902 and the micro device upper electrode 1001 need to be transparent or require one or both of the upper electrode 1001 and the bottom electrode 902 and the upper electrode and the upper electrode One of 1001 and bottom electrode 902 or one of the transparency in both.

FIG. 13A shows a layout structure in which the bottom electrode 902 has an opening 1301 to allow access to one of the transparent paths of the top electrode 905. The opening 1301 can also extend through the bank layer 903 of the common top electrode 905. If the common top electrode 905 is not present and if the bank layer 903 is transparent, the opening 1301 in the bank layer 903 is not required. In some embodiments, if the top electrode 905 is also opaque, the opening 1301 in the top electrode 905 is also required for top emission.

Referring to FIG. 13B, in another embodiment, to provide a transparent path for the micro device 801, the bottom electrode 902 does not cover the micro device 801. For a common top electrode 905, an opening 1301 may be present in the bank layer 903. If the common top electrode 905 is not present and the bank layer 903 is transparent, the opening 1301 in the bank layer 903 is not required.

In another case, the contact pad structure 702b of the thin film optoelectronic device 904 can extend to act as a reflective layer. As can be seen in Figure 14A, two side-by-side pixels with contacts 702b can be used to laterally limit the light generated by the micro-devices 801 in the pixels. In another embodiment, shown in FIG. 14B, one of the reflective layers 1401 mounted on one of the top surfaces of the substrate 100 can reflect more light toward the top electrode 905. Thus, the output coupling of the light generated by the micro device 801 is enhanced. In this case, the best practice is to make the top and bottom electrodes 902 and 905 of the thin film photovoltaic device 904 transparent, or to make openings if the electrodes 902 and 905 are opaque.

In another embodiment, thin film optoelectronic device 904 and micro device 801 can be on opposite sides of system substrate 100. In this case, the system substrate circuit may be connected to one side on one side of the system substrate 100 and through the contact hole, or the circuit may be on both sides of the system substrate 100.

In another case, the micro device 801 can be on the system substrate 100 and the thin film optoelectronic device 904 on another system substrate. The two substrates can then be joined together. In this case, the circuit can be on one of the system substrates or on both substrates.

14C and 14D show different structures in which micro device (LED) 801 and thin film optoelectronic device 904 are integrated to produce a semiconductor device. Here, a light reflection or light confinement structure 5601 extending under the microdevice 801 and the thin film optoelectronic device 904 along the substrate 100 is ideally mounted on the substrate 100 to direct the light output of the micro device 801. Reflective structure 5601 can be the same as microdevice electrode 702a or a separate electrode 702a can be used. As shown in FIG. 14D, the first portion 902a extending from the contact pad 702b to the bottom electrode 902 parallel to one of the major planar sections 902b of the optoelectronic device 904 can include a reflective material that can function as one of a light confining or reflective structure, It is used to direct light in a desired direction (eg, through substrate 100 or top electrode 905) and to prevent light from entering adjacent pixels. The first portion 902a of the bottom electrode 902 can be deposited first, and then the remaining portion 902b or first portion 902a of the bottom electrode can be deposited after the main flat portion 902b. Also, other electrodes may be deposited to connect the micro device 801. Ideally, both the bottom and top electrodes 902 and 905 of the thin film photovoltaic device 904 are transparent such that light from the microdevice 801 and the optoelectronic device 904 is emitted through the top electrode 905. Any discrete light that is not emitted outward may be redirected outwardly through the top electrode 905 by reflective structures 5601 and 902a. Optoelectronic devices 904 may be formed between the bank structures 903, which may alternatively be black matrices. After optoelectronic device 904, other structures may be integrated (such as encapsulated).

14E, 14F, and 14G depict another structure in which the photovoltaic device 904 and the micro device 801 are side by side on the substrate 100. Here, the micro device 801 is transferred to the system substrate 100. A planarization layer 903 (or bank layer) is deposited and patterned to open an area of the optoelectronic device 904. Photovoltaic device 904 is deposited using different possible methods, such as vapor deposition, printing, and the like. Next, a top electrode 905 is deposited over the top of the optoelectronic device 904 and the micro device 801. Here, other structures may be deposited after the top electrode 905. Light can pass through the top electrode 905 or the system substrate 100. In one configuration depicted in Figure 14E, microdevice 801 and optoelectronic device 905 have the same top electrode 905. In another configuration depicted in FIG. 14F, the microdevice 801 has a single upper electrode 5620 covered by a passivated (dielectric) layer 903. Here, the top electrode 905 extending over both the thin film photovoltaic device 904 and the micro device 801 can be used as a light confining/reflecting structure to guide light from the micro device 801 and the thin film photovoltaic device 904 through the system substrate 100. In another example shown in FIG. 14G, the top electrode 905 is shared; however, the passivation/planarization layer 903 is patterned at 5562 as one or more concave structures to create a guide for directing light in a desired direction (eg, Returning through one or more of the light confining/reflecting structures of the substrate 100). Here, a separate layer can be used to create a light confinement structure prior to deposition of the top electrode 905.

In all of the configurations described herein, the contact electrode(s) 702a of the microdevice 801 can be deposited after the microdevice 801 is transferred to the system substrate 100, or a contact 702a can be pre-existing prior to the transfer procedure. A planarization layer 901 or 903 may be present prior to the microdevice 801, and other devices may be mounted on the system substrate 100 to improve the surface profile. In this case, there may be openings that connect the microdevice 801 to other components in the system substrate 100.

The structure described above can be combined. For example, light confinement or extraction structures and mixing devices can be mixed.

In the hybrid device depicted in Figures 9-14 herein, the thin film light emitting device structure 904 can include a color filter. In the case of a color filter, light from the microdevice 801 needs to pass through the thin film illumination device structure 904 and through the color filter.

14H and 14I show two examples of integrating microdevice 801 with a color filter 5810 and optoelectronic device 904. In this case, light passes through the system substrate 100. After depositing color filter 5810, locating bond pads 702a and 702b, and transferring microdevice 801 and upper electrode 1001 (the order of which may be changed), a planarized (e.g., dielectric) layer 901 may be deposited as desired. Two or three different planarization layers can be deposited after each previous step. Next, photovoltaic device 904 and bottom and top electrodes 902 and 905 are separately deposited and formed. Here, the micro device 801 can include a light confinement structure (this can also be used for other structures in this document) prior to transfer. Again, as shown in FIG. 14I, the light confinement structure can be formed after transferring the micro device 801. In the illustrated embodiment, the light confinement has a passivation layer 5814 (here insulated from the microdevice 801 and the upper electrode 1001) and is formed to reflect light in a desired direction (eg, through the substrate 100) One of the concave structures is a reflective layer 5812.

14J shows another example of integrating microdevice 801 with optoelectronic device 904 and color filter 5810 mounted over optoelectronic device 904 and top electrode 905. All of the above structures, such as light confinement structures, can be used with microdevice 801 and optoelectronic device 904 in this example. Here, light passes through the transparent top electrode 905. In this configuration, one (or several) transparent protective layers 5910 may be present between the top electrode 905 and the color filter 5810. Integration

This document also discloses various methods for integrating a single microdevice array into a system substrate or selectively transferring a micro device array to a system substrate. Here, the proposed procedure is divided into two categories. In the first category, the pitch of the bond pads on the system substrate is the same as the pitch of the bond pads of the micro device. In the second category, the bond pads on the system substrate have a pitch that is greater than one of the bond pads of the micro device. For the first category, three different integration or transfer schemes are presented 1. Front side joint 2. Back side joint 3. Through substrate through hole joint.

In this embodiment, the micro devices may be of the same type or different types in terms of functionality. In one embodiment, the microdevices are micro LEDs having the same color or having a plurality of different colors (eg, red, green, and blue), and the system substrate is a backplane to control the individual micro LEDs. These multi-color LED arrays are fabricated directly on a substrate or transferred from a growth substrate to a temporary substrate. In one example shown in FIG. 15, RGB micro-LED devices 1503, 1504, and 1505 are grown on a sacrificial/buffer layer 1502 and substrate 1501. In one case, system substrate 1506 having contact pads 1507 can be aligned (FIG. 16) and bonded to microdevice substrate 1501, as shown in FIG. After removing the microdevice substrate 1501 (Fig. 18) and the sacrificial/buffer layer 1502 (Fig. 19), a filler dielectric coating 2001 (e.g., polyimine) can be spin coated/deposited on the integrated sample (Fig. 20). Photoresist). An etching process can be performed after this step to expose the top of the micro LED device. In the case of a micro LED device, a common transparent electrode 2002 can be deposited on the sample. In another embodiment, a top electrode can be deposited and patterned to isolate the microdevice for subsequent processing.

In another embodiment, as shown in FIG. 21, micro devices 1503, 1504, and 1505 are grown on a buffer/sacrificial layer 1502. A dielectric filler layer 2101 is deposited/spin on the substrate to completely cover the microdevice. In one example depicted in FIG. 21, an etch process can be performed after this step to expose the tops of micro devices 1503, 1504, and 1505 to form top common contacts and seed layers for subsequent processing (eg, electroplating). . Referring to Figure 22, a thick mechanical support layer 2102 is then deposited, grown or bonded on top of the sample. Here, the filler layer 2101 can be a black matrix layer or a reflective material. Also, prior to depositing the mechanical support, one can deposit an electrode (as a patterned or a common layer). A mechanical support layer is then deposited. In the case of optoelectronic devices, such as LEDs, the mechanical support layer needs to be transparent. As shown in Figures 23 and 24, the microdevice substrate 1501 is then removed using various procedures, such as laser lift-off or etching. In one case, the thickness of the substrate is initially reduced to a few microns by a procedure such as, but not limited to, deep reactive ion etching (DRIE). The remaining substrate is then removed by a procedure such as, but not limited to, a wet chemical etch process. In this case, the buffer/sacrificial layer 1502 can act as an etch stop layer to ensure a uniform etch of the sub-surface and avoid any damage to the micro device. After the buffer layer 1502 is removed, as shown in FIG. 24, another etch (eg, RIE) is performed to expose the micro device. A metal layer can be deposited and patterned to act as the upper contact and bond pads on the micro device above the contacts and bond pads that have not been formed during micro device fabrication. The system substrate 1506 with contact pads 1507 can then be aligned and bonded to the micro device array, as shown in FIG. Depending on the type and functionality of the microdevice, the mechanical support layer 2102 and the filler layer 2101 can then be removed, as shown in Figures 26A and 26B.

In another embodiment, a through-substrate via is implemented to make a contact to the backside of the microdevice.

Referring to FIG. 27, in one embodiment, micro devices 1503, 1504, and 1505 can be multi-color micro-LEDs grown on an insulating buffer layer 1502. This buffer layer 1502 can also be used as an etch stop layer. A dielectric layer 2701 is deposited over and around the microdevices 1503, 1504, and 1505 as a filler layer.

Referring to Figures 28A and 28B, a pattern is formed on the back side of the substrate 1501 using a procedure such as, but not limited to, photolithography. In one embodiment, a method such as DRIE is used to make a through substrate hole in the substrate 1501. A buffer layer 1502 that can serve as an etch stop layer can be removed using, for example, a wet etch process.

Referring to FIG. 29, an insulating film 2901 may be deposited on the back surface of the substrate 1501. The insulating layer 2901 can be removed from the backside portions of the micro devices 1503, 1504, and 1505 to allow for the formation of electrical contacts to such micro devices.

Referring to Figure 30, the through holes are filled with a conductive material 3001 using a procedure such as, but not limited to, electroplating. Here, the vias can serve as micro device contacts and bond pads.

As shown in FIG. 31, one of the micro devices 1503, 1504, and 1505 is formed by a common front contact 3101 by performing an etching process (eg, using RIE) to expose the tops of the micro devices 1503, 1504, and 1505; A transparent conductive layer is then deposited to form the front contact 3101.

Referring to Figure 32, microdevice substrate 1501 is then aligned and bonded to system substrate 1506 having contact pads 1507, which in this example can be one of the control unit backplanes.

In another embodiment, microdevices have been fabricated on a substrate at any pitch length to maximize production yield. For example, the micro device can be a multi-color micro LED (eg, RGB). The system substrate of this example can be a display backplate having a contact pad having a pitch length that is different from the pitch length of the micro LED.

Referring to FIG. 33A, in one embodiment, the donor substrate 1501 has micro device types 3301, 3302, and 3303 and is patterned in the form of a one-dimensional array 3304 for each of the micro devices 3301, 3302 from one type and 3303, at least one of the microdevices from another type having a pitch 3305 matching the pitch of the corresponding region (or pad) on the receptor (or system) substrate 1506.

As an example, in one embodiment shown in FIG. 33B, the pitch 3404 of the contact pads 1507 is twice as large as the pitch 3402 of the micro device 3401 shown in FIG.

Referring to Figure 34, system substrate 1506 and microdevice substrate 1501 are bonded together, aligned and in contact.

As shown in FIGS. 35 and 36, a method such as laser lift-off (LLO) can be used to selectively transfer micro-device 3401 to contact pads 3403 on system substrate 1506. As shown in FIG. 37, a transfer layer 3701 and a conformal conductive layer 3702 can then be deposited on top of the system substrate as a common electrode after transfer.

In another embodiment, illustrated in Figures 38A and 38B, a buffer layer 3801 is required as a material template for fabricating one of the microdevices 1503, 1504, and 1505.

Still referring to FIGS. 38A and 38B, buffer layer 3801 is deposited over sacrificial layer 1502 and patterned to isolate micro devices 1503, 1504, and 1505. In some cases, the sacrificial layer 1502 can also be patterned.

In one embodiment, instead of isolating individual microdevices, the microdevice groups can be isolated from each other (as shown in Figures 38A and 38B) to facilitate the transfer procedure.

Referring to FIG. 39, a fill material 3901 (such as, but not limited to, polyimide) may be spin coated on substrate 1501 to fill the gap between individual microdevices 1503, 1504, and 1505. This filling step ensures the mechanical strength during the transfer procedure. This is especially important when using a procedure such as laser stripping to detach the microdevice from the carrier substrate.

Referring to FIG. 40, the micro devices may not have the same height, which makes it difficult to bond them to the system substrate 1506. In such cases, one can implement an electrostatic clamping mechanism 4001 or other clamping mechanism in system substrate 1506 to temporarily hold the microdevice on system substrate 1506 for the final bonding step. The clamping mechanism 4001 can globally clamp the microdevices locally or to a microdevice group, as in the case of the same pitch shift for the entire wafer. The clamping mechanism 4001 can be on one of the layers above the contact electrode 1507. In this case, a planarization layer can be used.

In one embodiment, referring to FIG. 41A, the pattern of different micro device types 3301, 3302, and 3303 on the donor substrate produces a two-dimensional array of each type (eg, array 4100), which is defined as an adjacent array. The pitch 4101 between the array of center-to-center distances matches the pitch of the corresponding area on the system substrate.

In an embodiment shown in FIGS. 41B and 42 , when the sub-device pitch 4103 is greater than the normal distance (eg, in a large display) of the fabricated individual micro device 1503 on its substrate, the micro device substrate 1501 Arranged in the form of a two-dimensional monochromatic array. Here, the pitch 4102 of the contact pads 1507 and the pitch 4103 of the micro device array 1503 are the same. Using this technique, we can relax the microdevice manufacturing requirements and reduce the selective transfer procedure as compared to those described above.

43 and 44 illustrate an alternative pattern in which microdevices 1503 are not formed into a two-dimensional group, and wherein different micro devices 1503 are evenly placed across substrate 1501, as shown for three different micro devices 1503 in FIG.

Referring to FIG. 45, in another embodiment, the micro device 4503 is first transferred to a conductive translucent common substrate 4501, which is then bonded to a system substrate 4502. Color conversion structure

In some embodiments in which the microdevice is an optical device, such as an LED, we can use color conversion or color filters to define different functionality (different colors in the case of pixels). In this embodiment, two or more contact pads on the system substrate are loaded with the same type of optical device. Once in place, the devices on the system substrate are distinguished by different color conversion layers.

Referring to Figures 46A and 46B, in one embodiment, after transferring microdevice 1503 to system substrate 1506, the entire structure is covered by a planarization layer 4601. A common electrode 4602 is then formed on the planarization layer 4601. The height of the planarization layer can be the same, higher or lower than the stacked device. If the planarization layer 4601 is low (or there is no planarization layer), the walls of the device may be conformally covered by the passivation material.

Referring to Figure 47, a bank structure 4701 is created (especially where a printing process is used to deposit the color conversion layer). The bank 4701 can separate the pixels or separate only the different color conversion materials 4702.

Figure 48 shows an integrated structure in which color conversion material 4702 completely covers the side of the transfer microdevice and partially covers it. The bank 4701 separates the color conversion layer 4702 and the electrode 4602 is a common contact of all of the transferred microdevices.

Figure 49 shows an integrated structure in which color conversion layer 4702 completely covers the top of the transferred microdevice and partially covers the side thereof. The bank 4701 separates the color conversion layer 4702 and contacts to the micro device are made through only the system substrate 1506.

Figure 50 shows an integrated structure in which a color conversion layer 4702 is formed directly on the common electrode 4602. In this case, no bank layer is used.

Figure 51 shows an integrated structure in which color conversion layer 4702 completely covers the top of the transferred microdevice and partially covers the side thereof. Electrode 4602 is a common contact for all of the transferred microdevices. In this case, no bank layer is used.

Figure 52 shows an integrated structure in which color conversion layer 4702 completely covers the top of the transfer microdevice and partially covers the side thereof. The contacts to the micro device are made to pass only through the system substrate 1506. In this case, no bank layer is used.

In one embodiment, shown in FIGS. 53A and 53B, after the color conversion material 4702 is formed on the integrated system substrate 1506, a planarization layer 5301 is deposited on the structure. In some cases where it is desirable to protect the color conversion material and/or other components of the integrated substrate from environmental conditions, an encapsulation layer 5302 is formed over the entire structure. It should be noted that the encapsulation layer 5302 can be formed from a stack of different layers to effectively protect the integrated structure from environmental conditions.

Referring to Figures 54A and 54B, in another embodiment, one of the individual substrates 5401 coated with the encapsulation layer 5302 can be bonded to the integrated system substrate.

The embodiment depicted in Figures 53 and 54 can be combined wherein an encapsulation layer 5302 is formed on both the structure 1506 and the individual structure 5401 for more efficient encapsulation.

The common electrode is deposited as a blanket layer on one of the transparent conductive layers on the substrate. In one embodiment, this layer can act as a planarization layer. In some embodiments, the thickness of this layer is selected to meet both optical and electronic requirements.

The distance between the optical devices can be selected to be large enough to reduce crosstalk between the optical devices, or a barrier layer can be deposited between the optical devices to achieve this. In one case, the planarization layer also acts as a barrier.

After depositing the color conversion layer, different layers (such as polarizers) can be deposited.

In another aspect, a color filter is deposited on the color conversion layer. In this case, a wider color gamut and higher efficiency can be achieved. A person can use a planarization layer and/or a bank layer after the color conversion layer before depositing the color filter layer.

The color filter can be larger than the color conversion layer to block any light leakage. Furthermore, a black matrix can be formed between the color conversion islands or the color filters.

55A, 55B, and 55C illustrate a structure in which a device is shared among a plurality of pixels (or sub-pixels). Here, the micro device 1503 is not fully patterned, but the horizontal conditions are designed such that the contact 1507 defines an area that is assigned to each pixel. Figure 55A shows a system substrate 1506 having a contact pad 1507 and a donor substrate 1501 having a micro device 1503. After the microdevice 1503 is transferred to the system substrate (shown in Figure 55B), we can perform post processing (Fig. 55C), such as depositing a common electrode 4602, a color conversion layer 4702, a color filter, and the like. FIG. 55C shows an example of depositing a color conversion layer 4702 on top of the micro device 1503. Here, color filter deposition can be performed after the color conversion layer. The methods and/or other possible methods described in this disclosure can be used in different parts or in integrating different layers into a display. Again, the planarization layer 4601 can be used before or after the electrode 4602. Also, a reflective layer 1509 can be used between the LEDs 1503. A filler can be used between the pads 1507 and the filler can be a black matrix. A spacer or light confinement structure can be used between the LEDs 1503. On the system substrate 1506, a reflective layer can be used to direct the light.

FIG. 55D shows another example of depositing a color conversion layer 4702 on top of the micro device 1503. However, other methods described in the present invention, as well as other possible methods, may also be used. Also, the planarization layer 4601 can be used before or after the transparent upper electrode 4602. Also, a reflective layer can be used between the LEDs 1503. A filler can be used between the pads 1507 and the filler 5502 can be a black matrix. A spacer or light confinement structure 5504 can be used between the micro LEDs 1503. On the system substrate 1506, a reflective layer 1509 can be used to direct light. Here, the light of the micro LED 1503 diffuses over a larger area such that there is less stress on the color conversion layer 4702. Different structures can also be used to diffuse light over a larger area.

After forming the active area, the color conversion layer as described can be added to the pixel (or sub-pixel) active area. This provides a higher fill factor and higher performance and also avoids color leakage from side pixels (or sub-pixels) if the active area of the pixel (or sub-pixel) is covered by the reflective layer.

The previous description of one or more embodiments of the invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise forms disclosed. Many modifications and variations are possible in light of the above teachings. The scope of the invention is not intended to be limited to the details of the invention, but is limited by the scope of the appended claims.

100‧‧‧Receptor substrate

101a‧‧‧Contact pads

101b‧‧‧Contact pads

102a‧‧‧Microdevice/micro-lighting diode (LED) device

102b‧‧‧Microdevice/micro-lighting diode (LED) device

201‧‧‧Conformal dielectric layer

202‧‧‧reflective layer

203‧‧‧Black matrix/black matrix layer

301‧‧‧Transparent Conductive Layer/Common Contact

302‧‧‧Optical components

303‧‧‧Common electrode

501‧‧‧Transparent filler

601a‧‧‧ subpixel

601b‧‧‧ subpixel

602‧‧‧Optical components

702a‧‧‧ joint pad

702b‧‧‧ Bonding pad/contact pad structure

801‧‧‧Microdevice

901‧‧‧ dielectric layer

902‧‧‧ bottom electrode

902a‧‧‧Part 1

902b‧‧‧main flat section

903‧‧‧bank layer/passivation layer/flattening layer

904‧‧‧Thin-film optoelectronic device/thin film illuminator structure

905‧‧‧ top electrode

1001‧‧‧Upper device electrode

1005‧‧‧ openings

1301‧‧‧ openings

1401‧‧‧reflective layer

1501‧‧‧Substrate/microdevice substrate

1502‧‧‧sacrificial/buffer layer

1503‧‧‧Microdevice

1504‧‧‧Microdevice

1505‧‧‧Microdevice

1506‧‧‧System substrate

1507‧‧‧Contact pads

1509‧‧‧reflective layer

2001‧‧‧ Filler dielectric coating

2002‧‧‧Common transparent electrode

2101‧‧‧ dielectric filler layer

2102‧‧‧Mechanical support layer

2701‧‧‧Dielectric layer

2901‧‧‧Insulation film/insulation

3001‧‧‧Electrical materials

3101‧‧‧ Front contact

3301‧‧‧Microdevice

3302‧‧‧Microdevice

3303‧‧‧Microdevice

3304‧‧‧Microarray

3305‧‧‧ pitch

3401‧‧‧Microdevice

3402‧‧‧ pitch

3403‧‧‧Contact pads

3404‧‧‧ pitch

3701‧‧‧Filling layer

3702‧‧‧Conformal conductive layer

3801‧‧‧ Buffer layer

3901‧‧‧Filling materials

4001‧‧‧Electrostatic clamping mechanism

4100‧‧‧Array

4101‧‧‧ pitch

4102‧‧‧ pitch

4103‧‧‧ pitch

4501‧‧‧ Conductive translucent common substrate

4502‧‧‧System substrate

4503‧‧‧Microdevice

4601‧‧‧flattening layer

4602‧‧‧Common electrode

4701‧‧‧ Embankment structure / embankment

4702‧‧‧Color Conversion Material/Color Conversion Layer

5301‧‧‧Destivation layer

5302‧‧‧Encapsulation layer

5401‧‧‧ separate substrate

5502‧‧‧Filling

5504‧‧‧Parts or light confinement structures

5601‧‧‧reflection or light confinement structure

5620‧‧‧Upper electrode

5810‧‧‧Color filter

5812‧‧‧reflective layer

5814‧‧‧ Passivation layer

5910‧‧‧Transparent protective layer

The invention will be described in more detail with reference to the accompanying drawings, in which:

1 shows an array of one of a transfer substrate having a contact pad and a transfer microdevice attached to the acceptor substrate.

2A shows a conformal dielectric and reflective layer having an acceptor substrate of a contact pad, an array of transferred microdevices attached to the acceptor substrate, and a top portion.

2B shows an array of acceptor substrates having contact pads, an array of transferred microdevices attached to the acceptor substrate, and a patterned conformal dielectric and reflective layer.

2C shows an acceptor substrate having a contact pad, an array of transferred microdevices attached to the acceptor substrate, a patterned conformal dielectric and reflective layer, and a black formed between adjacent micro devices Matrix layer.

3A shows an acceptor substrate having a contact pad, an array of transferred microdevices attached to the acceptor substrate, a patterned conformal dielectric and reflective layer, a black matrix layer, and one of the deposited on the substrate. Transparent conductive layer.

3B shows an acceptor substrate having an integrated array of one of the transferred microdevices attached thereto and an optical reflective assembly for light output coupling enhancement.

3C shows a receptor substrate having an integrated array of one of the transferred microdevices attached thereto and a concave contact pad for light output coupling enhancement.

3D shows an acceptor substrate having an integrated array of one of the transferred microdevices attached thereto in a bottom emission configuration.

Figure 3E shows an acceptor substrate having an integrated array of one of the transferred microdevices attached thereto.

4A shows an acceptor substrate having a transferred microdevice, a conformal dielectric layer, and a connected reflective layer.

4B shows a transparent conductive layer having a transferred microdevice, a conformal dielectric layer, an acceptor substrate connected to the reflective layer, and deposited on the substrate.

Figure 5 shows a patterned filler having one of the acceptor substrates and one of the defined pixels (or sub-pixels) of the transferred microdevice.

6A shows one of the pixelated packing structures covering all of the sub-pixels in at least one of the pixels (eg, two sub-pixels covering one of the two sub-pixels).

6B shows a patterned conformal dielectric and reflective layer surrounded by two sub-pixels, patterned to define a filler layer of the pixel, and around the pixel.

6C shows one pixel composed of two sub-pixels, patterned to define one of the pixel's filler layers, a patterned conformal dielectric and reflective layer around the pixel, and a black rectangular layer that wraps the pixel.

6D shows a pixel composed of two sub-pixels, patterned to define a filler layer of the pixel, a patterned conformal dielectric and reflective layer around the pixel, a black rectangular layer that wraps the pixel, and A transparent conductive layer deposited on the substrate.

Figure 6E shows one pixel consisting of two sub-pixels with reflective optical components on the acceptor substrate for better light output coupling.

Figure 6F shows one pixel consisting of two sub-pixels with a concave contact pad on the acceptor substrate.

Figure 6G shows one pixel consisting of two sub-pixels with a bottom emission configuration.

Figure 6H shows a pixel consisting of two sub-pixels, a common top electrode and a side reflector with a bottom emission configuration.

Figure 7 shows an acceptor substrate having two contact pads.

Figure 8 shows an acceptor substrate having one of the transferred microdevices bonded to one of the contact pads.

Figure 9 shows the integration of a transferred microdevice with a photovoltaic thin film device in a hybrid configuration.

Figure 10 shows another example of integrating a transferred microdevice with a photovoltaic thin film device in a hybrid configuration.

Figure 11 shows an example of integrating a transferred microdevice with a photovoltaic thin film device in a hybrid structure having a common top electrode.

Figure 12 shows an embodiment of integrating a transferred microdevice with a photovoltaic thin film device in a dual surface hybrid structure having both top and bottom transparent electrodes.

Figure 13A shows another embodiment of a system substrate and an integrated micro device having a thin film photovoltaic device.

Figure 13B shows another embodiment of a system substrate and integrated microdevice with one of the thin film optoelectronic devices.

Figure 14A shows an embodiment of a system substrate and an integrated microdevice having two thin film optoelectronic devices.

Figure 14B shows an embodiment of a system substrate and an integrated microdevice having one of the two thin film optoelectronic devices and one of the reflective layers on the acceptor substrate.

14C and 14D show examples of micro-LEDs and optoelectronic devices in which light passes through an optoelectronic device.

14E, 14F, and 14G show another example of a micro LED integrated with an optoelectronic device on a system substrate.

14H and 14I show another example of a micro LED integrated with a photovoltaic device and a color filter on a system substrate.

Figure 14J shows another example of a micro LED integrated with optoelectronic devices and color filters on a system substrate.

Figure 15 illustrates a cross section of a system substrate and a micro device substrate.

Figure 16 shows the alignment steps of one of the system substrates and one of the microdevice substrates in a transfer procedure.

Figure 17 shows the bonding steps of a system substrate and a micro device substrate in a transfer procedure.

Figure 18 shows the micro device substrate removal step of one of the system substrate and a micro device substrate in a transfer procedure.

Figure 19 shows the sacrificial layer removal step of one of the system substrate and a micro device substrate in a transfer procedure.

Figure 20 shows a common electrode forming step of one of the system substrate and a micro device substrate in a transfer procedure.

Figure 21 is a cross section of one of the microdevice substrates having one (several) filler layers.

Figure 22 is a cross section of one of the microdevice substrates covered with a support layer.

Figure 23 shows the microdevice substrate removal step of one of the microdevice substrates in a transfer procedure.

24A and 24B illustrate a sacrificial layer removal step of a microdevice substrate in a transfer procedure. A system substrate having one of the contact pads is also shown.

Figure 25 shows the bonding steps of one of the system substrate and one of the micro device substrates in a transfer procedure.

26A and 26B illustrate a support layer removal step of one of the microdevice substrates in a transfer procedure. A system substrate having a contact pad and a transfer micro device is also shown.

Figure 27 is a cross section of one of the microdevice substrates covered with a filler layer.

28A and 28B are cross sections of a microdevice substrate having a via hole in a substrate and a sacrificial layer.

Figure 29 is a cross section of one of the microdevice substrates having via holes in the substrate and a sacrificial layer covered by an insulating layer.

Figure 30 is a cross section of one of the microdevice substrates having one of the vias filled in the substrate and the sacrificial layer.

Figure 31 is a cross section of one of the microdevice substrates having a common top electrode.

Figure 32 is a cross section of one of the integrated system substrates having a common top electrode.

Figure 33A shows a two-dimensional configuration of a microdevice on a donor substrate.

Figure 33B is a cross section of a system substrate and a micro device substrate.

Figure 34 is a cross section of a bonded system substrate and a microdevice substrate.

Figure 35 shows the laser stripping step of one of the microdevice substrates in a transfer procedure.

Figure 36 is a cross section of one of the system substrate and a micro device substrate after the selective transfer procedure.

Figure 37 is an integrated system substrate having one common top electrode.

38A and 38B are cross sections of a microdevice substrate having one of the microdevices having different heights.

Figure 39 is a cross section of one of the microdevice substrates having a filler layer.

Figure 40 illustrates the alignment steps of a system substrate having a clamping mechanism and a micro device substrate in a transfer procedure.

Figure 41A shows a two-dimensional configuration of a microdevice on a donor substrate.

Figure 41B is a cross section of one of a system substrate having a different pitch and a micro device substrate.

Figure 42 shows a selective micro device transfer procedure for a system substrate having a different pitch and a micro device substrate.

Figure 43 is a cross section of one of a system substrate having a different pitch and a micro device substrate.

Figure 44 shows a selective micro device transfer procedure for a system substrate having a different pitch and a micro device substrate.

Figure 45 shows an integrated microdevice substrate.

46A and 46B show a transfer procedure of a microdevice to a system substrate having a planarization layer, a common top electrode, a bank structure, and a color conversion element.

Figure 47 shows a structure with color conversion for defining the color of a pixel.

Figure 48 shows a structure having a conformal common electrode separated by a bank layer and color conversion.

Figure 49 shows a structure having a conformal color conversion separated by a bank layer.

Figure 50 shows the structure of one of the color conversion elements on a common electrode having no bank layer.

Figure 51 shows a structure having a conformal common electrode and color conversion.

Figure 52 shows a structure having a conformal color conversion element formed directly on a micro device.

53A and 53B show a structure having a color conversion for defining pixel colors, a planarization layer, and a common transparent electrode.

Figures 54A and 54B show one structure having a color conversion for defining pixel colors and a single substrate for encapsulation.

Figures 55A, 55B, 55C, and 55D show one structure with color conversion for defining pixel colors, and pixelation is done using the current limiting method.

Claims (20)

An integrated optical system comprising a plurality of pixels, each pixel comprising: an acceptor substrate; a light emitting micro device integrated on the acceptor substrate; a planarization or embankment region surrounding the micro device; A thin film light-emitting photovoltaic device, at least a portion of which is mounted on the planarization or embankment region. The system of claim 1 further comprising a reflector capable of directing light from the micro device and the thin film optoelectronic device in the same direction. The system of claim 1, wherein the thin film light-emitting optoelectronic device comprises: a bottom electrode on the planarization structure; a thin film light-emitting layer; and a top electrode on the thin film light-emitting layer. The system of claim 3, wherein the top electrode comprises a reflective material for directing light from the microdevice and the thin film optoelectronic device in the same direction through one of the acceptor substrates. The system of claim 3, wherein the thin film emissive layer comprises a reflective material for directing light from the microdevice and the thin film optoelectronic device in the same direction through one of the acceptor substrates. The system of claim 3, wherein the bottom electrode comprises: a bond pad on the acceptor substrate; a first portion extending parallel to the acceptor substrate; and a second portion extending from the bond pad To the first portion, the second portion includes a reflective material for preventing light from entering one of the adjacent pixels. The system of claim 1, wherein the micro device comprises a lower electrode on the acceptor substrate, a light emitting portion, and an upper electrode on the light emitting portion; wherein the upper electrode is transparent to light from the light emitting portion; The lower electrode includes a reflective material for directing light from the microdevice and the thin film optoelectronic device in the same direction through one of the upper electrodes. The system of claim 7, wherein the thin film light-emitting photovoltaic device comprises: a bottom electrode on the planarization or bank region; a thin film light-emitting layer; and a top electrode on the thin film light-emitting layer, wherein the bottom portion The electrode comprises: a bond pad on the acceptor substrate; a first portion extending parallel to the acceptor substrate; and a second portion extending from the bond pad through the planarization or embankment region The first portion includes a reflective material for preventing light from entering one of the adjacent pixels. The system of claim 1 wherein the planarization or embankment region comprises a concave reflective structure for reflecting light from the microdevice in a desired direction. The system of claim 1, wherein the micro device comprises a lower electrode on the acceptor substrate, a light emitting portion, and an upper electrode on the light emitting portion; and further comprising a bank layer above the upper electrode for The upper electrode is insulated from the thin film photovoltaic device. The system of claim 10, wherein the bank layer includes an opening therethrough to enable light to travel through to the top electrode. The system of claim 3, wherein the microdevice comprises a lower electrode, a light emitting portion on the acceptor substrate, and wherein the top electrode extends through an opening in the thin film light emitting layer to contact the light emitting portion. The system of claim 3, wherein the bottom electrode, the thin film light emitting layer and the top electrode extend over the micro device; and wherein at least one of the bottom electrode, the thin film light emitting layer and the top electrode comprises one of An opening to enable light to travel through the top electrode. The system of claim 1 further comprising a color filter mounted on the receptor substrate for receiving light from the thin film illumination optoelectronic device. The system of claim 1, wherein the micro device and the thin film optoelectronic device are mounted side by side on the acceptor substrate. The system of claim 15, wherein the micro device comprises a lower electrode mounted on the acceptor substrate and a light emitting portion surrounded by the planarization or embankment region; wherein the thin film photovoltaic device comprises a mounting on the acceptor substrate a bottom electrode and a thin film light-emitting layer surrounded by the planarization or bank region; and a common top electrode extending across the light-emitting portion and the thin film light-emitting layer. The system of claim 16, wherein the planarization or embankment region comprises a concave structure for directing light from the microdevice in a desired direction. The system of claim 15, wherein the micro device comprises a lower electrode mounted on the acceptor substrate, a light emitting portion surrounded by the planarization or embankment region, and an upper electrode on the light emitting portion; wherein the thin film photovoltaic device The method includes a bottom electrode mounted on the acceptor substrate, a thin film light emitting layer surrounded by the planarization or embankment region, and a top electrode extending across the light emitting portion and the thin film light emitting layer; and the top electrode and the light emitting portion Partially insulated and comprising a concave structure for directing the light from the microdevice in a desired direction. The system of claim 1 wherein the planarizing or embankment region comprises a dielectric for electrically isolating at least a portion of the microdevice from the thin film optoelectronic device. An integrated optical system comprising: a system substrate; a first and a second plurality of electrode contact pads on the system substrate; a first illuminating micro device mounted on the first plurality of electrode contacts a second illuminating micro device mounted on the second plurality of electrode contact pads; a planarization or embankment region surrounding the first and second micro devices and interposed between the first and second micro devices Between the devices; a common top electrode extending across the top of both the first and second micro devices; and a color conversion layer on the common top electrode; a bottom reflector in the system a substrate for directing light from the first and second micro devices through the color conversion layer; and a side reflector extending over the system substrate into the planarization or embankment region for guiding from Light from the first and second micro devices passes through the color conversion layer.