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TW201914956A - Selective reduction of chlorodisilanes with tri-n-butyl tin hydride - Google Patents

Selective reduction of chlorodisilanes with tri-n-butyl tin hydride Download PDF

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TW201914956A
TW201914956A TW107131666A TW107131666A TW201914956A TW 201914956 A TW201914956 A TW 201914956A TW 107131666 A TW107131666 A TW 107131666A TW 107131666 A TW107131666 A TW 107131666A TW 201914956 A TW201914956 A TW 201914956A
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solvent
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hexachlorodioxane
butyltin hydride
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特拉維斯 桑德蘭
布萊恩D 雷肯
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美商陶氏有機矽公司
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    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes

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Abstract

A method for producing 1,1,1-trichlorodisilane including adding hexachlorodisilane to tri-n-butyl tin hydride in a solvent at a temperature of 20 DEG C or cooler.

Description

用三正丁基氫化錫選擇性還原氯二矽烷Selective reduction of chlorodioxane with tri-n-butyltin hydride

本發明涉及一種用於選擇性還原六氯二矽烷以產生1,1,1-三氯二矽烷的方法。The present invention relates to a process for the selective reduction of hexachlorodioxane to produce 1,1,1-trichlorodioxane.

已報導用三正丁基氫化錫還原六氯二矽烷,例如在U. Herzog等人,J. Organometallic Chem ., 1978 (161) 165-169中。然而,在此參考文獻中獲得之主要產物隨著所使用之催化劑而有所不同,且為SiHCl3 、矽烷、或二矽烷。Reduction of hexachlorodioxane with tri-n-butyltin hydride has been reported, for example, in U. Herzog et al., J. Organometallic Chem ., 1978 (161) 165-169. However, the main products obtained in this reference differ depending on the catalyst used and are SiHCl 3 , decane, or dioxane.

以相較於其他二矽烷對1,1,1-三氯二矽烷(1,1,1-3CDS)為高度選擇性來製造1,1,1-3CDS具有挑戰性,其他二矽烷包括三氯二矽烷之其他異構物、以及其他氯(二)矽烷及烷基(二)矽烷雜質。It is challenging to produce 1,1,1-3CDS with high selectivity to 1,1,1-trichlorodioxane (1,1,1-3 CDS) compared to other dioxane. Other dioxanes include trichloro. Other isomers of dioxane, as well as other chloro(di)decane and alkyl(di)decane impurities.

本發明解決的問題是提供一種以相較於其他二矽烷對1,1,1-3CDS為高度選擇性來製造1,1,1-3CDS的方法,其他二矽烷包括三氯二矽烷之其他異構物、以及其他氯(二)矽烷及烷基(二)矽烷雜質。具體而言,本發明提供一種相較於1,1,2-三氯二矽烷異構物以99重量百分比(wt%)選擇性來產生1,1,1-3CDS的方法,此係相對於兩種三氯二矽烷異構物之合併重量。此外,同時本發明之方法相較於其他氯二矽烷副產物以65 wt%或更高的選擇性產生1,1,1-3CDS。選擇性的wt%值係藉由氣相層析術使用下文中所述之方法判定。The problem addressed by the present invention is to provide a process for producing 1,1,1-3 CDS with a high selectivity to 1,1,1-3 CDS compared to other dioxanes, and other dioxanes including trichlorodioxane Structures, as well as other chloro(di)decane and alkyl(di)decane impurities. In particular, the present invention provides a method for producing 1,1,1-3 CDS in a 99 weight percent (wt%) selectivity compared to a 1,1,2-trichlorodioxane isomer, as opposed to The combined weight of the two chlorodiazine diisomers. Further, at the same time, the method of the present invention produces 1,1,1-3 CDS at a selectivity of 65 wt% or more compared to other chlorodioxane by-products. The selectable wt% values were determined by gas chromatography using the methods described below.

本發明之方法是發現1,1,1-3CDS可藉由以下方式以高選擇性水準製造的結果:以於溶劑中之三正丁基氫化錫起始以形成混合物,然後在攝氏20度(℃)或更冷的溫度下添加至混合物六氯二矽烷(HCDS)。The method of the present invention is to find that 1,1,1-3 CDS can be produced at a high selectivity level by starting with tri-n-butyltin hydride in a solvent to form a mixture, and then at 20 degrees Celsius ( Add to the mixture hexachlorodioxane (HCDS) at a temperature of °C) or more.

在第一態樣中,本發明為一種用於產生1,1,1-三氯二矽烷的方法;該方法包含在不大於20℃的溫度下將六氯二矽烷添加至於溶劑中之三正丁基氫化錫的混合物中。In a first aspect, the invention is a process for producing 1,1,1-trichlorodioxane; the process comprising adding hexachlorodioxane to a solvent in a solvent at a temperature of no greater than 20 ° C In a mixture of butyltinhydride.

除非特別註明,否則百分比為重量百分比(wt%)且溫度使用℃。氯(二)矽烷係指氯矽烷及氯二矽烷兩者。烷基(二)矽烷係指烷基矽烷及烷基二矽烷兩者。三正丁基氫化錫(Bu3 SnH)具有CAS號688-73-3,且亦稱為三正丁基錫烷。Unless otherwise noted, the percentages are by weight (wt%) and the temperature is °C. Chloro(di)decane refers to both chlorodecane and chlorodioxane. Alkyl(di)decane means both alkyldecane and alkyldioxane. Tri-n-butyltin hydride (Bu 3 SnH) has CAS number 688-73-3 and is also known as tri-n-butylstannane.

本發明之方法需要形成於溶劑中之三正丁基氫化錫(TBTH)的混合物。可將TBTH添加至溶劑或將溶劑添加至TBTH以形成混合物。所欲的是,溶劑為非極性有機溶劑。較佳的非極性有機溶劑包括C4 -C20 烴及醚;較佳的是C6 -C20 直鏈或支鏈烷烴、C6 -C20 芳烴、或C4 -C20 醚;較佳的是癸烷、異十二烷、甲苯、二甲苯、二異丙基苯、、二乙醚、或二丁醚;較佳的是二甲苯、癸烷、或異十二烷。可使用本文所提及之有機溶劑的混合物。非極性有機溶劑可為芳族或非芳族的。The process of the invention requires a mixture of tri-n-butyltin hydride (TBTH) formed in a solvent. TBTH can be added to the solvent or added to the TBTH to form a mixture. Desirably, the solvent is a non-polar organic solvent. Preferred non-polar organic solvents include C 4 -C 20 hydrocarbons and ethers; preferably C 6 -C 20 linear or branched alkanes, C 6 -C 20 aromatics, or C 4 -C 20 ethers; Is decane, isododecane, toluene, xylene, diisopropylbenzene, Diethyl ether or dibutyl ether; preferably xylene, decane or isododecane. Mixtures of the organic solvents mentioned herein may be used. The non-polar organic solvent can be aromatic or non-aromatic.

以有機溶劑及TBTH之重量計,溶劑通常以1至99 wt%的濃度存在。所欲的是,溶劑係以10 wt%或更多的濃度存在,較佳的是20 wt%或更多,且可為30 wt%或更多、40 wt%或更多、50 wt%或更多,而同時較佳的是90 wt%或更少、較佳的是80 wt%或更少、較佳的是70 wt%或更少,且可為60 wt%或更少、50 wt%或更少、30 wt%或更少、甚至25 wt%或更少,其中wt%係相對於溶劑及TBTH之合併重量。The solvent is usually present in a concentration of from 1 to 99% by weight, based on the weight of the organic solvent and TBTH. Desirably, the solvent is present at a concentration of 10 wt% or more, preferably 20 wt% or more, and may be 30 wt% or more, 40 wt% or more, 50 wt% or More, and at the same time, preferably 90 wt% or less, preferably 80 wt% or less, preferably 70 wt% or less, and may be 60 wt% or less, 50 wt. % or less, 30 wt% or less, or even 25 wt% or less, wherein wt% is the combined weight of the solvent and TBTH.

較佳地,有機溶劑與三正丁基氫化錫的混合物實質上不含路易士鹼,這意味著以溶劑及三正丁基氫化錫之總量的百分比表示,該混合物具有少於5 wt%的路易士鹼(路易士鹼不包括醚溶劑),較佳地少於2 wt%、較佳地少於1 wt%、較佳地少於0.5 wt%、較佳地少於0.1 wt%。Preferably, the mixture of the organic solvent and tri-n-butyltin hydride is substantially free of Lewis base, which means that the mixture has less than 5 wt% expressed as a percentage of the total amount of the solvent and tri-n-butyltin hydride. The Lewis base (the Lewis base does not include an ether solvent) is preferably less than 2 wt%, preferably less than 1 wt%, preferably less than 0.5 wt%, preferably less than 0.1 wt%.

該方法需要將六氯二矽烷(HCDS)添加至有機溶劑與TBTH的混合物。在添加HCDS期間,維持混合物溫度為20℃或更冷,較佳的是15℃或更冷、10℃或更冷、5℃或更冷、0℃或更冷、-5℃或更冷、-10℃或更冷、-12℃或更冷、-14℃或更冷、且甚至-15℃或更冷。同時,雖然該方法在溫度越冷下可能效果更好,但實際而言,溫度通常為-30℃或更暖、-25℃或更暖、-20℃或更暖,且可為-15℃或更暖。溶劑經選擇以在添加HCDS期間使液體保持在所維持之溫度。This process requires the addition of hexachlorodioxane (HCDS) to a mixture of organic solvent and TBTH. During the addition of HCDS, the temperature of the mixture is maintained at 20 ° C or colder, preferably 15 ° C or colder, 10 ° C or colder, 5 ° C or colder, 0 ° C or colder, -5 ° C or colder, -10 ° C or colder, -12 ° C or colder, -14 ° C or colder, and even -15 ° C or colder. At the same time, although the method may work better when the temperature is colder, in practice, the temperature is usually -30 ° C or warmer, -25 ° C or warmer, -20 ° C or warmer, and may be -15 ° C. Or warmer. The solvent is selected to maintain the liquid at the maintained temperature during the addition of HCDS.

所欲的是,在添加HCDS之後,將混合物維持在此等相同溫度值內係在0.5小時或更長的時間完成,較佳的是一小時或更長,更較佳的是兩小時或更長,且可為5小時或更長,而同時在通常為12小時或更短的期間,較佳的是8小時或更短,且可為5小時或更短、且甚至3小時或更短。Desirably, after the addition of the HCDS, maintaining the mixture at these same temperature values is completed in 0.5 hours or longer, preferably one hour or longer, more preferably two hours or more. Long, and may be 5 hours or longer, while at the same time typically 12 hours or less, preferably 8 hours or less, and may be 5 hours or less, and even 3 hours or less .

較佳地,添加足夠的HCDS以達到六氯二矽烷(HCDS)與三正丁基氫化錫的莫耳比為1:3至1:2,較佳的是1:2.8至1:2.2,且更較佳的是1:2.7至1:2.3。Preferably, sufficient HCDS is added to achieve a molar ratio of hexachlorodioxane (HCDS) to tri-n-butyltin hydride of from 1:3 to 1:2, preferably from 1:2.8 to 1:2.2, and More preferably, it is 1:2.7 to 1:2.3.

1,1,1-3CDS係藉由在添加HCDS期間及在HCDS添加完成之後的時間期間之HCDS及TBTH的反應形成。所欲的是藉由蒸餾純化1,1,1-3CDS,較佳的是在低於760毫米汞柱的壓力下。1,1,1-3 CDS was formed by the reaction of HCDS and TBTH during the addition of HCDS and during the time after the addition of HCDS was completed. What is desired is to purify 1,1,1-3 CDS by distillation, preferably at a pressure below 760 mm Hg.

1,1,1-3CDS可用於藉由已知技術(包括例如物理氣相沉積、原子層沉積(ALD)、或化學氣相沉積(CVD))形成矽-雜原子膜。該物理氣相沉積方法可包含濺鍍。適合的濺鍍方法包括直流(DC)磁控濺射法、離子束濺鍍法、反應濺鍍法、以及離子輔助濺鍍法。一般而言,該沉積方法包含ALD或CVD。較佳地,雜原子選自碳、氧及氮。1, 1, 1-3 CDS can be used to form a ruthenium-heteroatom film by known techniques including, for example, physical vapor deposition, atomic layer deposition (ALD), or chemical vapor deposition (CVD). The physical vapor deposition method can include sputtering. Suitable sputtering methods include direct current (DC) magnetron sputtering, ion beam sputtering, reactive sputtering, and ion assisted sputtering. In general, the deposition method comprises ALD or CVD. Preferably, the heteroatoms are selected from the group consisting of carbon, oxygen and nitrogen.

適合的ALD方法包括電漿增強原子層沉積法(PEALD)、空間原子層沉積法(SALD)以及熱原子層沉積法(TALD)。當用PEALD方法時,該電漿可以係前述電漿之任一者。該電漿可以可選地進一步含有載氣,諸如分子氮或氬氣體。電漿係由電漿形成氣體所形成,其可包含分子氮與分子氫之混合物。Suitable ALD methods include plasma enhanced atomic layer deposition (PEALD), space atomic layer deposition (SALD), and thermal atomic layer deposition (TALD). When the PEALD method is used, the plasma may be any of the foregoing plasmas. The plasma may optionally further contain a carrier gas such as molecular nitrogen or argon gas. The plasma is formed by a plasma forming gas which may comprise a mixture of molecular nitrogen and molecular hydrogen.

適合的CVD方法包括以下之方法:簡單熱氣相沉積、電漿增強化學氣相沉積(PECVD)、電子迴旋共振(ECRCVD)、大氣壓化學氣相沉積(APCVD)、低壓化學氣相沉積(LPCVD)、超高真空化學氣相沉積(UHVCVD)、氣溶膠輔助化學氣相沉積(AACVD)、直接液體注入化學氣相沉積(DLICVD)、微波電漿輔助化學氣相沉積(MPCVD)、遠端電漿增強化學氣相沉積(RPECVD)、原子層化學氣相沉積(ALCVD)、熱絲化學氣相沉積(HWCVD)、混合物理化學氣相沉積(HPCVD)、快速熱化學氣相沉積(RTCVD)、及氣相磊晶化學氣相沉積(vapor-phase epitaxy chemical vapor deposition, VPECVD)、光輔助化學氣相沉積(photo-assisted chemical vapor disposition, PACVD)及火焰輔助化學氣相沉積(FACVD)。實例 Suitable CVD methods include the following methods: simple thermal vapor deposition, plasma enhanced chemical vapor deposition (PECVD), electron cyclotron resonance (ECRCVD), atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), Ultra High Vacuum Chemical Vapor Deposition (UHVCVD), Aerosol Assisted Chemical Vapor Deposition (AACVD), Direct Liquid Injection Chemical Vapor Deposition (DLICVD), Microwave Plasma Assisted Chemical Vapor Deposition (MPCVD), Remote Plasma Reinforcement Chemical vapor deposition (RPECVD), atomic layer chemical vapor deposition (ALCVD), hot wire chemical vapor deposition (HWCVD), hybrid chemical vapor deposition (HPCVD), rapid thermal chemical vapor deposition (RTCVD), and gas Vapor phase epitaxy chemical vapor deposition (VPECVD), photo-assisted chemical vapor deposition (PACVD) and flame assisted chemical vapor deposition (FACVD). Instance

藉由在室溫下在具有路易士鹼催化劑的溶劑中使用Bu3 SnH,比較例1顯示相較於其他氯二矽烷為低的對1,1,1-3CDS之選擇性(J. Organomet. Chem. 1995 ,494 , 143)By using Bu 3 SnH in a solvent having a Lewis base catalyst at room temperature, Comparative Example 1 showed a lower selectivity to 1,1,1-3CDS than other chlorodioxane ( J. Organomet. Chem. 1995 , 494 , 143)

在室溫下,藉由2 eq的Bu3 SnH於38 wt%甲苯中還原HCDS,並添加PPh3 作為路易士鹼催化劑,導致5莫耳% 1,1,1-3CDS及43莫耳%合併之其他氯二矽烷的產物分布。從這些莫耳百分比值明顯可知1,1,1-3CDS在反應產物分布中為次要組分。Reduction of HCDS by 2 eq of Bu 3 SnH in 38 wt% toluene at room temperature and addition of PPh 3 as a Lewis base catalyst resulted in a combination of 5 mol% 1, 1, 1-3 CDS and 43 mol% The product distribution of other chlorodioxane. It is apparent from these molar percentage values that 1,1,1-3 CDS is a minor component in the reaction product distribution.

藉由在室溫下並在缺乏路易士鹼催化劑的溶劑中使用Bu3 SnH,比較例2顯示相較於其他氯二矽烷為低的對1,1,1-3CDS之選擇性(批次27003-16-I)By using Bu 3 SnH at room temperature and in a solvent lacking a Lewis base catalyst, Comparative Example 2 showed a lower selectivity to 1,1,1-3 CDS compared to other chlorodioxane (batch 27003) -16-I)

在手套箱中,將三正丁基氫化錫(2.15 mL, 2.33 g, 2.0 eq)及甲苯(0.75 mL, 0.65 g. 37 wt%)裝入配備有玻璃溫度計套管的250 mL 3頸半夾套圓底燒瓶中,並保持在23℃下。將六氯二矽烷(HCDS, 0.69 mL, 1.1 g, 1 eq)在6 min內逐滴添加至Bu3 SnH溶液中,然後持續攪拌50 min。藉由GC-TCD分析溶液,顯示溶液含有16.5 wt% 1,1,1-3CDS、53.1 wt%合併之其他氯二矽烷,且不含可偵測的烷基(二)矽烷,其中wt%係相對於所有存在的單矽烷及二矽烷,如藉由氣相層析術(GC)使用下文中所述之方法判定。In a glove box, tri-n-butyltin hydride (2.15 mL, 2.33 g, 2.0 eq) and toluene (0.75 mL, 0.65 g. 37 wt%) were placed in a 250 mL 3-neck half clamp equipped with a glass thermowell. Set in a round bottom flask and keep at 23 °C. Hexachlorodioxane (HCDS, 0.69 mL, 1.1 g, 1 eq) was added dropwise to the Bu 3 SnH solution over 6 min, then stirring was continued for 50 min. The solution was analyzed by GC-TCD and showed that the solution contained 16.5 wt% 1,1, 1-3 CDS, 53.1 wt% of the combined chlorodioxane, and contained no detectable alkyl (di)decane, wherein wt% was Relative to all monodecane and dioxane present, as determined by gas chromatography (GC) using the methods described below.

藉由使用低反應溫度並在缺乏路易士鹼催化劑的溶劑中,發明實施例1顯示相較於其他氯二矽烷為高的對1,1,1-3CDS之選擇性(批次27003-16-Q)Inventive Example 1 showed high selectivity to 1,1,1-3CDS compared to other chlorodioxanes by using a low reaction temperature and in a solvent lacking a Lewisine catalyst (batch 27003-16- Q)

在手套箱中,將三正丁基氫化錫(3.75 mL, 4.06 g, 2.5 eq)及癸烷(1.69 mL, 1.23 g. 45 wt%)裝入配備有玻璃溫度計套管的250 mL 3頸半夾套圓底燒瓶中,並保持在-14℃下。將六氯二矽烷(HCDS, 0.96 mL, 1.50 g, 1 eq)在5 min內逐滴添加至Bu3 SnH溶液中,然後持續攪拌165 min。藉由GC-TCD分析溶液,顯示溶液含有43.4 wt% 1,1,1-3CDS、22.5 wt%合併之其他氯二矽烷,且不含可偵測的烷基(二)矽烷,其中wt%係相對於所有存在的單矽烷及二矽烷,如藉由氣相層析術(GC)使用下文中所述之方法判定。值得注意的是,沒有偵測到1,1,2-三氯二矽烷,指示相較於1,1,1-及1,1,2-三氯二矽烷異構物之組合,大於99 wt%之1,1,1-3CDS的選擇性。 氣相層析術選擇性分析In a glove box, tri-n-butyltin hydride (3.75 mL, 4.06 g, 2.5 eq) and decane (1.69 mL, 1.23 g. 45 wt%) were placed in a 250 mL 3-necked half equipped with a glass thermowell. The jacket was placed in a round bottom flask and maintained at -14 °C. Hexachlorodioxane (HCDS, 0.96 mL, 1.50 g, 1 eq) was added dropwise to the Bu 3 SnH solution over 5 min, then stirring was continued for 165 min. The solution was analyzed by GC-TCD and showed that the solution contained 43.4 wt% 1,1, 1-3 CDS, 22.5 wt% combined with other chlorodioxane, and contained no detectable alkyl (di)decane, wherein wt% was Relative to all monodecane and dioxane present, as determined by gas chromatography (GC) using the methods described below. It is worth noting that 1,1,2-trichlorodioxane was not detected, indicating a combination of greater than 99 wt% compared to the 1,1,1- and 1,1,2-trichlorodioxane isomers. The selectivity of % 1, 1, 1-3CDS. Gas chromatography selective analysis

使用氣相層析術以熱導偵測器(GC-TCD)判定相對於其他產物之1,1,1-3CDS的wt%選擇性。使用長度20公尺、內徑0.32毫米的毛細管柱,且在該毛細管柱的內表面上含有呈塗層形式之0.25微米厚的固定相,其中該固定相係由苯基甲基矽氧烷所組成。載氣係以每分鐘105毫米之流速使用的氦氣。氣相層析儀器可以是Agilent型號890A氣相層析儀。入口溫度係攝氏200度(℃)。溫度曲線係由以下所組成:在50℃持溫(保持)兩分鐘、以每分鐘15℃的速率升溫到250℃、然後在250℃持溫(保持)十分鐘。The wt% selectivity of 1,1,1-3 CDS relative to other products was determined by gas chromatography using a thermal conductivity detector (GC-TCD). A capillary column having a length of 20 meters and an inner diameter of 0.32 mm is used, and a 0.25 micron thick stationary phase in the form of a coating is contained on the inner surface of the capillary column, wherein the stationary phase is composed of phenylmethyl decane. composition. The carrier gas is helium used at a flow rate of 105 mm per minute. The gas chromatography instrument can be an Agilent Model 890A gas chromatograph. The inlet temperature is 200 degrees Celsius (°C). The temperature profile consisted of holding (holding) at 50 ° C for two minutes, raising the temperature to 250 ° C at a rate of 15 ° C per minute, and then holding (holding) at 250 ° C for ten minutes.

no

no

Claims (9)

一種用於產生1,1,1-三氯二矽烷的方法;該方法包含在不大於20℃的溫度下將六氯二矽烷添加至於溶劑中之三正丁基氫化錫的混合物中。A method for producing 1,1,1-trichlorodioxane; the method comprising adding hexachlorodioxane to a mixture of tri-n-butyltin hydride in a solvent at a temperature of not more than 20 °C. 如請求項1之方法,其中六氯二矽烷與三正丁基氫化錫的莫耳比為1:3至1:2。The method of claim 1, wherein the molar ratio of hexachlorodioxane to tri-n-butyltinhydride is from 1:3 to 1:2. 如請求項2之方法,其中該溶劑係有機溶劑。The method of claim 2, wherein the solvent is an organic solvent. 如請求項3之方法,其中在添加六氯二矽烷期間,將包含三正丁基氫化錫的反應混合物維持在-10℃或更冷的溫度下。The method of claim 3, wherein the reaction mixture comprising tri-n-butyltin hydride is maintained at a temperature of -10 ° C or more during the addition of hexachlorodioxane. 如請求項4之方法,其中以該有機溶劑及三正丁基氫化錫之總重量計,該有機溶劑係以10至90 wt%的量存在.The method of claim 4, wherein the organic solvent is present in an amount of 10 to 90 wt% based on the total weight of the organic solvent and tri-n-butyltin hydride. 如請求項5之方法,其中在添加該六氯二矽烷之後,將該反應混合物維持在不大於10℃的溫度下0.5至12小時。The method of claim 5, wherein after the addition of the hexachlorodioxane, the reaction mixture is maintained at a temperature of not more than 10 ° C for 0.5 to 12 hours. 如請求項6之方法,其中該有機溶劑為C4 -C20 烴、醚、或其組合。The method of claim 6, wherein the organic solvent is a C 4 -C 20 hydrocarbon, an ether, or a combination thereof. 如請求項7之方法,其中在添加該六氯二矽烷之後,將該反應混合物維持在-50至0℃的溫度下0.5至12小時。The method of claim 7, wherein the reaction mixture is maintained at a temperature of -50 to 0 ° C for 0.5 to 12 hours after the addition of the hexachlorodioxane. 如請求項1之方法,其中以溶劑及三正丁基氫化錫之總量計,該於溶劑中之三正丁基氫化錫的混合物含有少於5重量百分比的路易士鹼。The method of claim 1, wherein the mixture of tri-n-butyltin hydride in the solvent contains less than 5 weight percent of Lewis base, based on the total of the solvent and tri-n-butyltin hydride.
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