TW201830535A - Flip chip bonder and method for manufacturing semiconductor device - Google Patents

Abstract

According to the present invention, provided is a flip chip bonder, which can wash a die. The flip chip bonder comprises: a die supply unit for maintaining and supporting a die having a bump; a bonding stage for loading the die on a substrate or a pre-mounted die; a first head for picking the die up from the die supply unit to enable the die to be upside down; a second head for picking the die up from the first head; and a washing machine to wash the die located between the die supply unit and the bonding stage using dry ice.

Description

Flip chip bonding machine and manufacturing method of semiconductor device

[0001] The present invention relates to a flip chip bonding machine, and is applicable to, for example, a flip chip bonding machine having a cleaning device.

[0002] Generally, a semiconductor wafer referred to as a wafer is, for example, a wafer bonding machine mounted on a surface of a wiring substrate, a lead frame, or the like (hereinafter collectively referred to as a substrate). Generally, the wafer is transferred using an adsorption nozzle such as a chuck. A pressing force is applied to the substrate, and an operation (operation) for performing adhesion by heating the bonding material is repeatedly performed. Furthermore, the wafer bonding machine includes a flip-chip bonding machine for flipping (upside-down) the picked-up wafer (wafer having a bump on the surface) on a substrate. [0003] A wafer bonding machine includes a person who cleans the surface of a substrate (for example, Japanese Patent Application Laid-Open No. 2012-199458 (Patent Document 1)) and a person who cleans an adsorption surface of a chuck (for example, Japanese Patent Application No. 2016- 58575 (Patent Document 2)). [Knowledge Technical Literature] [Patent Literature] [0004] [Patent Literature 1] Japanese Patent Laid-Open No. 2012-199458 [Patent Literature 2] Japanese Patent Laid-Open No. 2016-58575

[Problems to be Solved by the Invention] 000 [0005] Adhesive remains from a backing tape attached to a surface of a wafer and a dicing tape attached to a back surface of a wafer, for example, in a flip chip adhesive If the paste remains on the raised surface (the surface of the wafer) or the like, a connection failure may occur. Neither Patent Literature 1 nor Patent Literature 2 cleans the wafer itself.的 An object of the present invention is to provide a flip-chip wafer bonding machine for cleaning wafers. Other problems and novel features will become apparent from the description in this specification and the accompanying drawings. [Means for Solving the Problems] [0006] The outline of a representative example in the present invention will be briefly described as follows. That is, the flip chip bonding machine includes a wafer supply unit that holds a wafer having a bulge, an adhesion stage for mounting the wafer on a substrate or a wafer that has been mounted, and supply from the wafer. A first head that picks up the wafer and turns it upside down, a second head that picks up the wafer from the first head, and cleans the wafer between the wafer supply section and the adhesive stage by dry ice Washing device. [Effects of the Invention] [0007] With the above-mentioned flip-chip bonding machine, the wafer can be cleaned.

[0009] Hereinafter, examples and modifications will be described using drawings. However, in the following description, the same components are denoted by the same reference numerals, and repeated descriptions are omitted. In addition, the drawings are intended to make the description clearer, and the width, thickness, shape, and the like of each part are shown schematically as compared with the actual aspect, but they are only examples and do not limit the explanation of the present invention. [0010] In the semiconductor manufacturing apparatus of the embodiment, after picking up a wafer from a wafer, it is only necessary to clean the surface, the back surface, or both the surface and the back surface of the wafer before adhering to a workpiece such as a substrate or the wafer. In addition to the wafer, the chuck and the intermediate stage may be cleaned. Use dry ice (CO ₂ ) Better. Embodiment 1 [0011] FIG. 1 is a schematic plan view of a flip chip bonding machine of Embodiment 1. FIG. 2 is a diagram illustrating the operation of the pickup head and the adhesive head when viewed from the direction of arrow A in FIG. 1. The flip-chip wafer bonding machine 10 roughly includes a wafer supply section 1, a pick-up section 2, an adhesion section 4, and a conveyance section 5, a cleaning device 6, a substrate supply section 9K, and a substrate carry-out section 9H. Control device 7 for operation monitoring and control. [0012] First, the wafer supply unit 1 supplies a wafer D mounted on a substrate P. The wafer supply unit 1 includes a wafer holding table 12 that holds the wafer 11, and a jacking unit 13 shown by a dotted line to lift the wafer D from the wafer 11. The wafer supply unit 1 moves the picked-up wafer D toward the position of the jack unit 13 by a driving means (not shown) in the XY direction. [0013] The pick-up unit 2 includes a chuck 22 that sucks the wafer D from the wafer supply unit 1, a pick-up head 21 that includes a chuck 22 at the tip to pick up the wafer, and a Y that moves the pick-up 21 in the Y direction. Driving section 23. The first head, that is, the pickup head 21, is a driving unit (not shown) that raises, lowers, rotates, reverses, and moves the chuck 22 in the X direction. [0014] With this configuration, the pick-up head 21 picks up the wafer, rotates the pick-up head 21 180 degrees, reverses the raised surface (surface) of the wafer D and faces downward, and transfers the wafer D toward the adhesive head 41. posture. [0015] The adhesive part 4 receives the reversed wafer D from the pick-up head 21, and is adhered by pressing or thermocompression on the solvent of the transferred substrate P, or is laminated on the substrate already adhered to the substrate P. The form on the wafer on P is adhered. The adhesive portion 4 includes an adhesive head 41 that includes a chuck 42 that holds and holds the wafer D at the front end, a Y driving portion 43 that moves the adhesive head 41 in the Y direction, and a substrate P, similar to the pickup head 21. A substrate recognition camera 44 that picks up a position recognition mark (not shown) and recognizes a sticking position. [0016] With this configuration, the second head, that is, the adhesive head 41, receives the inverted wafer D from the pickup head 21, corrects the pickup position and posture based on the imaging data of the downward-looking camera 45, and recognizes the camera based on the substrate. The imaging data of 44 adheres the wafer D to the substrate P. [0017] The cleaning device 6 includes a first nozzle 61 that cleans the back surface of the wafer D from above, and a second nozzle 62 that cleans the surface (having a raised surface) of the wafer D from below. The first nozzle 61 is a chuck 22 that can be cleaned except for the wafer D held on the chuck 22 of the pickup head 21 that picks up the wafer D from the wafer 11. The second nozzle 62 is a chuck 42 that can be cleaned except for the wafer D held on the chuck 42 of the adhesive head 41 that picks up the wafer D from the pickup head 21. [0018] The transfer unit 5 is a first and a second transfer unit having the same structure provided in parallel, and includes a substrate transfer tray on which one or a plurality of workpieces (four in the first figure) are placed. 51, and a tray rail 52 that moves the substrate transfer tray 51. The substrate transfer tray 51 is moved by driving a non-illustrated nut provided on the substrate transfer tray 51 by a ball screw (not shown) provided along the tray rail 52. [0019] With this configuration, the substrate transfer tray 51 carries the substrate P by the substrate supply unit 9K, and moves along the tray rail 52 to a position where the wafer D is adhered to the substrate P (adhesive stage BS (first After the adhesion stage BS1, the second adhesion stage BS2)), the substrate P is moved to the substrate carrying-out portion 9H after the adhesion, and the substrate P is transferred toward the substrate carrying-out portion 9H. The first and second conveying sections are driven independently of each other, and when the wafer D is adhered to the substrate P placed on one of the substrate conveying trays 51, the other substrate conveying tray 51 conveys the substrate P and returns to The substrate supply unit 9K prepares for placing a new substrate P and the like. [0020] The control device 7 includes a memory that stores a program (software) that controls operation monitoring of each part of the flip chip bonding machine 10, and a central processing unit (CPU) that executes the program stored in the memory. For example, the control device 7 takes in various information such as the image information of the substrate recognition camera 44 and the down-view camera 45, and the position of the adhesive head 41, and performs the adhesive operation of the adhesive head 41 and the cleaning operation of the cleaning device 6. Control of each operation of each component. [0021] FIG. 3 is a schematic cross-sectional view showing a main part of the wafer supply unit of FIG. 1. The wafer supply unit 1 includes an expansion ring 15 that holds the wafer ring 14, a support ring 17 that holds the wafer ring 14 and a dicing tape 16 that holds a plurality of wafers D horizontally, and a wafer D that faces upward. Jacking unit 13 for jacking. In order to pick up a predetermined wafer D, the jack unit 13 is moved in a vertical direction by a drive mechanism (not shown), and the wafer supply unit 1 is moved in a horizontal direction. [0022] The wafer supply unit 1 lowers the expansion ring 15 holding the wafer ring 14 when the wafer D is pushed up. As a result, the dicing tape 16 held by the wafer ring 14 is stretched, and the interval between the wafers D is increased. In such a state, the wafer supply unit 1 raises the wafer D from below the wafer by the jack unit 13, thereby improving the pick-up property of the wafer D. [0023] Next, the cleaning device of the flip-chip bonding machine of Example 1 will be described using FIGS. 4 to 6. Fig. 4 is a block diagram of the cleaning device of Fig. 1. FIG. 5 is a cross-sectional view of the first nozzle in FIG. 4. Fig. 6 is a sectional view of a second nozzle of Fig. 4. [0024] As shown in FIG. 4, the cleaning device 6 includes a first nozzle 61 and a second nozzle 62, a carbon dioxide supply source 63 that supplies liquid carbon dioxide, and supplies compressed air (pressurized gas). ), An air supply source 64, and supply pipes 65a to 65d that supply powdery dry ice generated by mixing liquid carbon dioxide and compressed air to the first nozzle 61 and the second nozzle 62. The cleaning device 6 further includes discharge pipes 66a to 66c for conveying foreign matter removed from the wafer by the first nozzle 61 and the second nozzle 62, a dust collection unit 67 for recovering the foreign matter, and a supply pipe. And valves 68a to 68f between the exhaust pipe and the ion generator 69. [0025] A supply pipe 65a and a discharge pipe 66a are connected to the first nozzle 61. As shown in FIG. 5, the first nozzle 61 includes a circular air outlet 61 a provided at a central portion, an air inlet 61 b provided to surround the outlet, and an air inlet 61 b A space 61c covering the wafer D between the air blowing port 61a and the air suction port 61b. As a result, the foreign matter blown away by the air discharged from the air blowing port 61a is immediately sucked by the air suction port 61b as shown by the arrow in FIG. 3, and is finally discarded. [0026] A supply pipe 65b and a discharge pipe 66b are connected to the second nozzle 62. As shown in FIG. 6, the second nozzle 62 is provided with a circular air blower outlet 62 a provided at the center, and is provided so as to surround the blower outlet in the same manner as the first nozzle 61. The air suction port 62b and a cleaning space 62c provided between the air blowing port 62a and the air suction port 62b and covering the wafer D. [0027] The first nozzle 61 is connected to a carbon dioxide supply source 63 that supplies liquid carbon dioxide through a supply pipe 65a, a valve 68a, a supply pipe 65c, 65d, a valve 68c, and a supply pipe 65e. The first nozzle 61 is connected to an air supply source 64 that supplies compressed air (compressed air) through a supply pipe 65a, a valve 68a, a supply pipe 65c, 65d, a valve 68d, and a supply pipe 65f. Between the supply pipe 65c and the supply pipe 65d, an ionizer (charge prevention means) 59 that ionizes the air supplied from the air supply source 64 is provided. The first nozzle 61 is connected to the dust collection unit 67 through a discharge pipe 66a, a valve 68e, and a discharge pipe 66c. [0028] The second nozzle 62 is connected to a carbon dioxide supply source 63 that supplies liquid carbon dioxide through a supply pipe 65b, a valve 68a, a supply pipe 65c, 65d, a valve 68c, and a supply pipe 65e. The second nozzle 62 is connected to an air supply source 64 that supplies compressed air (compressed air) through a supply pipe 65b, a valve 68a, a supply pipe 65c, 65d, a valve 68d, and a supply pipe 65f. The second nozzle 62 is connected to the dust collection unit 67 through the discharge pipe 66b, the valve 68f, and the discharge pipe 66c. [0029] Next, a bonding method (a method for manufacturing a semiconductor device) performed by the flip-chip bonding machine of Example 1 will be described with reference to FIG. 7. FIG. 7 is a flowchart showing a bonding method performed by the flip-chip bonding machine of the embodiment. [0030] Step S1: The control device 7 moves the wafer holding table 12 so that the picked-up wafer D is positioned directly above the jacking unit 13, and positions the peeling target wafer on the jacking unit 13 and the chuck 22. The jacking unit 13 is moved so that the upper surface of the jacking unit 13 contacts the back surface of the dicing tape 16. At this time, the control device 7 sucks the dicing tape 16 on the upper surface of the jacking unit 13. The control device 7 lowers the chuck 22 while evacuating, and lands on the wafer D to be peeled, and sucks the wafer D. The control device 7 raises the chuck 22 and peels the wafer D from the dicing tape 16. As a result, the wafer D is picked up by the pickup head 21. [0031] Step S2: The control device 7 moves the pickup head 21. [0032] Step S3: The control device 7 rotates the pick-up head 21 by 180 degrees, reverses the raised surface (surface) of the wafer D and faces downward, and places the wafer D in a posture to be transferred toward the adhesive head 41. [0033] Step S4: After step S3 or in parallel, the control device 7 moves the cleaning space 61c of the first nozzle 61 toward the wafer D held by the chuck 22 of the pickup head 21 and descends. [0034] Step S5: The control device 7 supplies liquid carbon dioxide from the carbon dioxide supply source 63 to the supply pipe 65e, and supplies air from the air supply source 64 to the supply pipe 65f. [0035] The control device 7 supplies liquid carbon dioxide from the carbon dioxide supply source 63 to the supply pipe 65d, and supplies air from the air supply source 64 to the supply pipe 65d and mixes them. As a result, part of the carbon dioxide in the liquid is deprived of the heat of vaporization (gasification heat), and the temperature of the liquid carbon dioxide is lower than the freezing point, and dry ice (solid carbon dioxide) is generated. In this way, the dry ice obtained by releasing the liquid carbon dioxide into the atmosphere of the washing space 62c is extremely fine powder. [0036] If the powdery dry ice is sprayed from the air blowing port 61a toward the wafer D, the dry ice will deform, break, and sublimate. The foreign matter adhering to the back surface of the wafer D is removed by the expansion energy generated by the sublimation of dry ice. The removed foreign matter is sucked from the air suction port 61b through the discharge pipe 66a and the like and is discharged to the dust collection unit 67. The supply amounts of liquid carbon dioxide and air are adjusted so that dry ice of a quantity suitable for the cleaning of the wafer D is sprayed from the air blowing port 61a. [0037] The dry ice described above is low in hardness and fine, and thus does not scratch and clean the wafer D. In addition, the cleaning device 6 includes an ionizer 69 in the supply pipe that appropriately ionizes the compressed air supplied from the air supply source 64, so that it can prevent the charging of powdery dry ice and prevent damage to the wafer D. . [0038] Step S6: The control device 7 raises the cleaning space 61c of the first nozzle 61 and moves from the wafer D held by the chuck 22 of the pickup head 21. [0039] Step S7: The control device 7 picks up the wafer D from the chuck 22 of the pickup head 21 through the chuck 42 of the adhesion head 41, and receives the wafer D. [0040] Step S8: The control device 7 moves the adhesive head 41 toward the cleaning position (directly above the second nozzle 62), and cleans the wafer D held by the chuck 42 of the adhesive head 41 toward the second nozzle 62. The space 62c moves. [0041] Step S9: The control device 7 sprays dry ice from the air blowing port 62a in the same manner as in step S5 to remove foreign matter adhering to the surface of the wafer D. The removed foreign matter is sucked from the air suction port 62b, and is discharged to the dust collection unit 67 through the discharge pipe 66b and the like. [0042] Step SA: The control device 7 moves the wafer D held by the chuck 42 of the adhesive head 41 toward the substrate P. [0043] Step SB: The control device 7 mounts the wafer D picked up from the chuck 22 of the pickup head 21 and the chuck 42 of the adhesion head 41 on the substrate P. [0044] Step SC: After step S8 or in parallel, the control device 7 reverses the pickup head 21 and faces the suction surface of the chuck 22 downward. [0045] Step SD: The control device 7 moves the pickup head 21 toward the pickup position. [0046] Before step S1, the wafer ring 14 holding the dicing tape 16 to which the wafer D divided from the wafer 11 is held is stored in a wafer cassette (not shown), and adhered to the flip-chip. Machine 10 moves in. The control device 7 supplies the wafer ring 14 to the wafer supply unit 1 from a wafer cassette filled with the wafer ring 14. Then, the substrate P is prepared and loaded into the flip-chip bonding machine 10. In the control device 7, the substrate P is placed on the substrate transfer tray 51 by the substrate supply unit 9K. [0047] After step SB, the control device 7 takes out the substrate P to which the wafer D is adhered from the substrate transfer tray 51 by the substrate carrying-out portion 9H. The substrate P is carried out from the flip-chip bonder 10. [0048] In the flip-chip bonding machine, there is a possibility that the paste becomes rigid on the raised surface and the like may cause poor connection. In Example 1, dry ice (CO ₂ ) Wash. thus, The back grinding tape attached to the surface of the wafer and the adhesive residue from the dicing tape attached to the back of the wafer and foreign matter in the tray can be attached. Remove before mounting on the substrate. further, Foreign matter can be removed without destroying the bulge. It can reduce the poor connection caused by the penetration of foreign objects. [0049] When the wafer D has a TSV (Trough Silicon Via), Because other wafers are stacked on the back, Therefore, the washing in step S5 is effective. When wafer D is not laminated without TSV or the like, It is not necessary to perform step S5. A cleaning device is also provided on the substrate side so that the substrate area side can be cleaned at the same time. [Modification 1] Next, Use Section 8. FIG. 9 illustrates a modified example 1 of a bonding method (a method of manufacturing a semiconductor device) performed by the flip-chip bonding machine of the first embodiment. FIG. 8 is a flowchart showing a bonding method according to a first modification of the flip-chip bonding machine of FIG. 1. Terminals A, B is the terminal A, B connected. [0051] Adhesion method of modification 1, In addition to the adhesion method of the embodiment, The chuck 22 of the pickup head 21 is also cleaned by the first nozzle 61 of the cleaning device 6. the following, The additional steps will be described. [0052] Step SE: After step S7, The control device 7 moves the cleaning space 61 c of the first nozzle 61 toward the chuck 22 of the pickup head 21 and descends. [0053] Step SF: Control device 7, Is the same as step S5, Dry ice is sprayed from the air blowing port 61 a to remove foreign matter adhering to the surface of the suction surface of the chuck 22. The removed foreign matter is sucked from the air suction port 61b through the discharge pipe 66a and the like and is discharged to the dust collection unit 67. [0054] Step SG: The control device 7 raises the cleaning space 61c of the first nozzle 61, Move from the chuck 22 of the pickup head 21. [Modification 2] Next, A modification 2 of the adhesion method (the method of manufacturing a semiconductor device) performed by the flip-chip bonding machine of the first embodiment will be described with reference to FIG. FIG. 10 is a flowchart showing a bonding method according to a second modification performed by the flip-chip bonding machine of FIG. 1. Terminals A, B is the same as terminal A, B connected. [0056] An adhesion method according to Modification 2, In addition to the adhesion method of Modification 1, The chuck 42 of the adhesive head 41 is also cleaned by the second nozzle 62 of the cleaning device 6. the following, The additional steps will be described. [0057] Step SH: The control device 7 moves the adhesive head 41 toward the washing position (directly above the second nozzle 62), The chuck 42 of the adhesive head 41 is moved toward the cleaning space 62 c of the second nozzle 62. [0058] Step SI: Control device 7, Is the same as step S5, Dry ice is sprayed from the air blow-out port 62 a to remove foreign matter adhering to the surface of the suction surface of the chuck 42. The removed foreign matter is sucked from the air suction port 62b, and is discharged to the dust collection unit 67 through the discharge pipe 66b and the like. [0059] Step SJ: Control device 7, The chuck 42 of the adhesive head 41 is moved toward the receiving position of the wafer D. [0060] In Modification Example 1, Wash the chuck in 2 When using a rubber collet, It is also cold resistant when used at low temperatures washed with dry ice, Flexible Si rubber-based material, Especially FVMQ (trade name: Fluorine power) and the like are preferred. And It is preferable to use cold-resistant metals and resins in the chuck. In this case, Especially in a way that no condensation occurs on the chuck, The heater is incorporated or installed in a chuck that holds the wafer under cleaning and irradiates infrared rays toward the chuck itself, The function of preventing temperature drop is better. In the following embodiments and modifications, When the chuck is washed, The material and dew condensation prevention function of the above-mentioned chuck are also suitable. Embodiment 2 FIG. 11 is a schematic plan view showing a flip-chip bonding machine of Embodiment 2. FIG. Figure 12 illustrates picking up the flip-chip when seen from the direction of arrow A in Figure 11, Diagram of the movement of the transfer head and the adhesive head. [0062] Flip-chip adhesive machine 10A, Is roughly having: Wafer supply unit 1, And pickup section 2A, Transfer Department 8. And intermediate stage section 3, And adhesive part 4A, And transportation department 5, Washing device 6A, And substrate supply unit 9K, And board carrying out part 9H, And a control device 7 for monitoring and controlling the operation of each unit. [0063] a pickup section 2A, Is with: A pick-up head 21A that picks up and reverses the wafer D, And a Y driving unit 23A of the pickup head that moves the pickup flipper 21A in the Y direction, And lifting the chuck 22, Rotation, Each driving unit (not shown) that moves in the reverse and X directions. With this composition, The first head is the 21A pickup head. Is to pick up the wafer, Rotate the pick up flip head 21A 180 degrees, Reverse the bump of wafer D to the bottom, The wafer D is transferred to the second head, that is, the transfer head 81. The transfer section 8, To receive the reversed wafer D from the pickup flip head 21A, Placed on the intermediate stage 31. Transfer department 8, Is with: A transfer head 81 including a chuck 82 for holding and holding the wafer D at the tip in the same manner as the pick-up flip head 21A. And a Y driving unit 83 that moves the transfer head 81 in the Y direction. [0065] The intermediate stage section 3, It is provided with the intermediate stage 31 which temporarily mounts the wafer D. The intermediate stage 31 is movable in the Y direction by a driving unit (not shown). Condensation countermeasures, It is preferable to incorporate heating means such as a heater into the intermediate stage 31. It is preferable to apply the same dew condensation measures to the intermediate stage of the following embodiments and modifications. [0066] The adhesive portion 4A, The wafer D is picked up from the intermediate stage 31, By being adhered to the substrate P being carried, Alternatively, adhesion is performed by laminating on a wafer already adhered to the substrate P. Adhesive part 4A, Is with: Similar to the pickup flip head 21A, an adhesive head 41 including a chuck 42 (see also FIG. 12) for holding and holding the wafer D at the tip is provided. And a Y driving section 43 that moves the adhesive head 41 in the Y direction, And a substrate recognition camera 44 that images the position recognition mark (not shown) of the substrate P and recognizes the adhesion position. With this composition, The third head is the adhesive head 41, Is the pickup position, Posture correction, Picking up the wafer D from the intermediate stage 31, The wafer D is adhered to the substrate P based on the imaging data of the substrate recognition camera 44. [0067] The cleaning device 6A includes a third nozzle 61A that cleans the back surface of the wafer D from above and a second nozzle 62 that cleans the surface (having a raised surface) of the wafer D from below. The third nozzle 61A is other than the back surface of the wafer D placed on the intermediate stage 31. Washing can be performed from above the upper surface of the intermediate stage 31. The second nozzle 62 can be cleaned from below the suction surface of the chuck 42 except for the surface of the wafer D held by the chuck 42 of the adhesive head 41. [0068] Next, The cleaning device of Example 2 will be described using FIG. 13. Fig. 13 is a block diagram of the cleaning device. [0069] a cleaning device 6A, The first nozzle 61 that can replace the cleaning device 6 of the first embodiment includes a third nozzle 61A. Washing device 6A, Yes: Second nozzle 62, And the third nozzle 61A, And a carbon dioxide supply source 63 that supplies liquid carbon dioxide, And an air supply source 64 that supplies compressed air (pressurized gas), And supply pipes 65b to 65d for supplying powdered dry ice produced by mixing liquid carbon dioxide and compressed air to the second nozzle 62 and the third nozzle 61A, 65g. Washing device 6A, Is further equipped with: The discharge pipes 66b to 66d that carry the foreign matter removed from the wafer D and the like by the second nozzle 62 and the third nozzle 61A, And dust collecting unit 67 for recovering foreign objects, And valves 68b to 68d provided between the supply piping and the discharge piping, 68f ～ 68h, And ion generator 69. [0070] The third nozzle 61A is cleaned by the same operation as the first nozzle 61 of the first embodiment. [0071] Next, An adhesion method (a method for manufacturing a semiconductor device) performed by the flip-chip adhesion machine of Example 2 will be described with reference to FIGS. 14 to 18. FIG. 14 is a cross-sectional view of the wafer during cleaning of the third nozzle. Fig. 15 is a cross-sectional view of the wafer after the third nozzle has been cleaned. Fig. 16 is a cross-sectional view when the intermediate stage of the third nozzle is cleaned. Chapter 17 FIG. 18 is a flowchart showing a bonding method performed by the flip-chip bonding machine of Example 2. FIG. Terminals A, B is the terminal A from the ninth or tenth embodiment of FIG. B connected. Terminal C in Figure 17 D is the terminal C, D connection. [0072] Step S11: Control device 7, Is the same as step S1, The wafer D is picked up by the pickup flip-chip 21A. [0073] Step S12: Control device 7, Is the same as step S2, Move the pickup flip head 21A. [0074] Step S13: Control device 7, Is the same as step S3, Rotate the pick up flip head 21A 180 degrees, The bump (surface) of the wafer D is turned to face downward, The wafer D is transferred to the transfer head 81. [0075] Step S14: Control device 7, Is the same as step S7, The wafer D is picked up from the chuck 22 of the pickup flip-chip 21A by the chuck 82 of the transfer head 81, Acceptance of wafer D is performed. [0076] Step S15: Control device 7, Is to reverse the pickup flip head 21A, The suction surface of the chuck 22 faces downward. [0077] Step S16: Before step S15 or in parallel, The control device 7 moves the transfer head 81 toward the intermediate stage 31. [0078] Step S17: The control device 7 mounts the wafer D held on the transfer head 81 on the intermediate stage 31. [0079] Step S18: The control device moves the transfer head 81 toward the receiving position of the wafer D. [0080] Step S19: After step S18 or in parallel, The control device 7 moves the intermediate stage 31 below the third nozzle 61A. [0081] Step S1A: Control device 7, The cleaning space 61c of the third nozzle 61A is moved (lowered) toward the wafer D placed on the intermediate stage 31. [0082] Step S1B: Control device 7, Is the same as step S5, Spray powdery dry ice from the air blowing port 61a, Remove and clean the foreign matter attached to the back of the wafer D, The removed foreign matter is sucked from the air suction port 61b and is discharged toward the dust collecting unit 67 (FIG. 14). [0083] Step S1C: Control device 7, As shown in Figure 15, The third nozzle 61A is moved (raised) from the intermediate stage 31. [0084] Step S1D: After step S1C or in parallel, The control device 7 moves the intermediate stage 31 toward the receiving position of the adhesive head 41. [0085] Step S1E: The control device 7 picks up the wafer D from the intermediate stage 31 through the chuck of the adhesive head 41, Acceptance of wafer D is performed. [0086] Step S1F: The control device 7 moves the intermediate stage 31 below the third nozzle 61A. [0087] Step S1G: After step S1G or in parallel, The control device 7 moves (falls) the cleaning space 61c of the third nozzle 61A toward the intermediate stage 31. [0088] Step S1H: Control device 7, Is the same as step S1B, Dry ice is sprayed from the air blowing port 61a to remove and clean the foreign matters adhering to the surface of the intermediate stage 31. The removed foreign matter is sucked from the air suction port 61b and is discharged toward the dust collecting unit 67 (FIG. 16). [0089] Step S1I: The control device 7 moves (raises) the third nozzle 61A from the intermediate stage 31. [0090] Step S1J: The control device 7 moves the intermediate stage 31 toward the receiving position with the transfer head 81. [0091] Again, Adhesion after step S1E, The cleaning of the surface of the wafer D by the second nozzle 62 and the cleaning of the chuck 42 are the same as those of the modification 1 (FIG. 9) and the modification 2 (FIG. 10). And Actions before step S11, The operation is the same as that before step S1 in the first embodiment. And The operation of taking out and carrying out the adhered substrate P is the same as in the first embodiment. [0092] The flip-chip bonding machine of Example 2, Is to install a cleaning device on the intermediate stage, Both sides of the wafer back surface and the intermediate stage are cleaned. thus, Wash the back surface of the laminated wafer, It can prevent pores, etc. caused by foreign matter on the laminated wafer, And prevent the accumulation of foreign matter on the intermediate stage. [0093] The nozzle of the cleaning device of Example 2 blows out powdered dry ice, attract. Dry ice from the nozzle blows out the washing area, It is an area larger than the maximum size of the mounted wafer. The cleaning device is raised to a position where it does not interfere with the movement of the adhesive head, Backoff function. And In addition, a cleaning stage on which wafers are placed is different from the intermediate stage. The structure which moves the nozzle of a washing | cleaning apparatus to the position of a washing stage and an intermediate stage may be sufficient. According to Example 2, Both the back surface of the wafer and the intermediate stage may be cleaned by a cleaning device of one mechanism. [0094] Again, The third nozzle 61A is movable except for the intermediate stage 31, The intermediate stage 31 may be provided with a plurality of units in accordance with a necessary processing amount (capacity). [Embodiment 3] [0095] FIG. 19 is a schematic plan view showing a flip-chip bonding machine of Embodiment 3. Figure 20 illustrates picking up the flip-chip when seen from the direction of arrow A in Figure 19, Diagram of the movement of the transfer head and the adhesive head. [0096] Flip-chip adhesive machine 10B, Is roughly having: Wafer supply unit 1, And pickup section 2A, Transfer Department 8. And an intermediate stage portion 3B having a cleaning device 6B, And adhesive part 4A, And transportation department 5, Substrate supply unit 9K, And board carrying out part 9H, And a control device 7 for monitoring and controlling the operation of each unit. [0097] the intermediate stage portion 3B, Is with: Intermediate stage 31B on which wafer D is temporarily placed, The stage recognition camera 32 recognizes the wafer D on the intermediate stage 31B. The intermediate stage 31B includes a fifth nozzle 62B of the cleaning device 6B and a shutter (stage) SS on which the wafer D is placed. [0098] a cleaning device 6B, By opening and closing the shutter SS of the intermediate stage 31B, The surface of the wafer D to be held on the chuck 82 of the transfer head 81, The lower surface (suction surface) of the chuck 82 and the lower surface (suction surface) of the chuck 42 of the adhesive head 41 are washed from below. [0099] Next, The cleaning device of Example 3 will be described using FIG. 21. Fig. 21 is a block diagram of the cleaning device. [0100] a washing device 6B, Yes: Fifth nozzle 62B, And a carbon dioxide supply source 63 that supplies liquid carbon dioxide, And an air supply source 64 that supplies compressed air (pressurized gas), And a supply pipe 65b for supplying powdered dry ice produced by mixing liquid carbon dioxide and compressed air to the fifth nozzle 62B, 65c, 65d. Washing device 6B, Is further equipped with: A discharge pipe 66b for conveying foreign matter removed from the wafer by the fifth nozzle 62B, 66c, And dust collecting unit 67 for recovering foreign objects, And valves 68b provided between the supply piping and the discharge piping, 68c, 68d, 68f, And ion generator 69. [0101] The fifth nozzle 62B is cleaned by the same operation as that of the second nozzle 62 of the first embodiment. [0102] Next, A description will be given of an adhesion method (a method of manufacturing a semiconductor device) performed by the flip-chip adhesion machine of Example 3 with reference to FIGS. 22 to 29. Fig. 22 is a cross-sectional view of a fourth nozzle during wafer cleaning. FIG. 23 is a cross-sectional view of the fifth nozzle after the wafer has been cleaned. Fig. 24 is a cross-sectional view of the chuck of the transfer head of the fifth nozzle during cleaning. Fig. 25 is a cross-sectional view of the chuck of the adhesive head of the fifth nozzle during cleaning. 26 to 29 are flowcharts showing a bonding method performed by the flip-chip bonding machine according to the third embodiment. Terminals E, F is the same as terminal E, F to connect. The terminals G to L in FIG. 27 are connected to the terminals G to L in FIG. 28. [0103] Step S21: Control device 7, Is the same as step S1, The wafer D is picked up by the pickup flip-chip 21A. [0104] Step S22: Control device 7, As in step S12, Move the pickup flip head 21A. [0105] Step S23: Control device 7, As in step S13, Rotate the pick up flip head 21A 180 degrees, The bump (surface) of the wafer D is turned to face downward, The wafer D is transferred to the transfer head 81. [0106] Step S24: Control device 7, As in step S14, The wafer D is picked up from the chuck 22 of the pickup head 21A by the chuck 82 of the transfer head 81, Acceptance of wafer D is performed. [0107] Step S25: Control device 7, Is to reverse the pickup flip head 21A, The suction surface of the chuck 22 faces downward. [0108] Step S26: Before step S25 or in parallel, The control device 7 moves the transfer head 81 upward of the intermediate stage 31B. [0109] Step S27: The control device 7 closes the shutter SS of the fifth nozzle 62B of the cleaning device 6B. [0110] Step S28: After step S27 or in parallel, The control device 7 lowers the transfer head 81. [0111] Step S29: The control device 7 mounts the wafer D held on the transfer head 81 on the intermediate stage 31B. [0112] Step S2A: The control device 7 raises the transfer head 81 from the wafer D and raises the chuck 82 (FIG. 22). [0113] Step S2I: The control device 7 lowers the adhesive head 41, The wafer D on the intermediate stage 31B is picked up. at this time, The transfer head 81 is moved to retreat. [0114] Step S2J: The control device 7 raises the adhesive head 41. [0115] Step S2B: After step S2A or in parallel and after step S2J, or in parallel, The control device 7 opens the shutter SS of the fifth nozzle 62B of the cleaning device 6B. [0116] Step S2K: The control device 7 lowers the adhesive head 41 so that the wafer D held by the chuck 42 enters the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B. [0117] Step S2C: Control device 7, Is the same as step S6, Spray powdery dry ice from the air blowing port 62a, Remove and clean the foreign matter attached to the back of the wafer D, The removed foreign matter is sucked from the air suction port 62b and is discharged toward the dust collecting unit 67 (FIG. 23). [0118] Step S2L: The control device 7 raises the adhesive head 41 from the fifth nozzle 62B to move (raise) the wafer D. [0119] Step S2M: The control device 7 moves the adhesive head 41 toward the adhesive stage. [0120] Step S2N: Control device 7, The wafer D picked up from the intermediate stage 31B by the chuck 42 of the adhesive head 41 is mounted on the substrate P on the adhesive stage. [0121] Step S2D: The control device 7 lowers the transfer head 81 and enters the chuck 82 into the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B. [0122] Step S2E: Control device 7, Is the same as step S6, Spray powdery dry ice from the air blowing port 62a, Remove and clean the foreign matter attached to the lower surface (suction surface) of the collet 82, The removed foreign matter is sucked from the air suction port 62b and is discharged toward the dust collecting unit 67 (FIG. 24). [0123] Step S2F: The control device 7 raises the transfer head 81. [0124] Step S2G: The control device 7 moves the transfer head 81 toward the transfer head receiving position. [0125] Step S2O: The control device 7 moves the adhesive head 41 toward the fifth nozzle 62B of the cleaning device 6B. [0126] Step S2P: The control device 7 lowers the chuck 42 of the adhesive head 41 and enters the cleaning space 62c of the fifth nozzle 62B. [0127] Step S2H: Control device 7, Is the same as step S6, Spray powdery dry ice from the air blowing port 62a, Remove and clean the foreign matter attached to the lower surface (suction surface) of the chuck 42, The removed foreign matter is sucked from the air suction port 62b and is discharged toward the dust collecting unit 67 (FIG. 25). [0128] Step S2Q: The control device 7 moves the adhesive head 41 upward to retreat. [0129] Again, Actions before step S21, The operation is the same as that before step S1 in the first embodiment. And The operation of taking out and carrying out the substrate P after step S2N is the same as that of the first embodiment. [0130] The flip-chip bonding machine of Example 3, It is a function of installing a cleaning device on the intermediate stage. The intermediate stage is set up: Blow out powdered dry ice, Suction nozzle, Furthermore, a baffle of a wafer can be placed on the upper part of the baffle. Close the baffle and set the wafer on the baffle. Since then, The chip is picked up by the adhesive head, Open the baffle of the intermediate stage, The back surface of the wafer to be picked up and held by the chuck of the adhesive head is washed by a dry ice cleaning function. When the adhesive head is moved, the suction surface of the chuck of the transfer head is washed by the dry ice cleaning function. Since then, It is also possible to clean the suction surface of the chuck of the end of the adhesive head. [0131] According to Example 3, Can be washed by 1 dry ice function, Place the surface of the wafer, Wash the suction surface of the chuck of the transfer head and the suction surface of the chuck of the bonding head. thus, Can prevent the accumulation of foreign objects, The risk of foreign matter attachment on the wafer surface can be further reduced. [0132] <Modification 3> Next, For the bonding method (the manufacturing method of the semiconductor device) performed by the flip-chip bonding machine according to the modification (Modification 3) of Example 3, the 22nd to 25th, 29, 30 illustrations. 29. FIG. 30 is a flowchart showing a bonding method according to a third modification performed by the flip-chip bonding machine of FIG. 19. [0133] An adhesion method according to Modification 3, Although it is the same as steps S21 to S25 of the adhesion method of the third embodiment, But the other steps are different. Terminals E, F is the same as terminal E, Fig. 26 F to connect. The terminals M to O of FIG. 29 are connected to the terminals M to O of FIG. 30. The steps subsequent to step S24 of the adhesion method of the modification example 3 will be described below. [0134] Step S36: The control device 7 moves the transfer head 81 upward of the intermediate stage 31B. [0135] Step S37: The control device 7 lowers the transfer head 81 and the wafer D held by the chuck 82 enters the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B. [0136] Step S38: Control device 7, Is the same as step S6, Spray powdery dry ice from the air blowing port 62a, Remove and clean the foreign matter attached to the back of the wafer D, The removed foreign matter is sucked from the air suction port 62b and is discharged toward the dust collecting unit 67 (FIG. 23). [0137] Step S39: The control device 7 moves (raises) the wafer D by raising the transfer head 81 from the fifth nozzle 62B. [0138] Step S3A: After step S39, The control device 7 closes the shutter SS of the fifth nozzle 62B of the cleaning device 6B. [0139] Step S3B: After step S3A or in parallel, The control device 7 lowers the transfer head 81. [0140] Step S3C: The control device 7 mounts the wafer D held on the transfer head 81 on the intermediate stage 31B. [0141] Step S3D: The control device 7 raises the transfer head 81 from the wafer D and raises the chuck 22 (FIG. 22), The transfer head 81 is moved back from above the intermediate stage 31B. [0142] Step S3K: After step 3D, The control device 7 lowers the adhesive head 41, The wafer D on the intermediate stage 31B is picked up. at this time, The transfer head 81 is moved to retreat. [0143] Step S3L: The control device 7 raises the adhesive head 41. [0144] Step S3E: After step 3K, The control device 7 opens the shutter SS of the fifth nozzle 62B of the cleaning device 6B. [0145] Step S3M: The control device 7 moves the adhesive head 41 toward the adhesive stage. [0146] Step S3N: Control device 7, The wafer D picked up from the intermediate stage 31B by the chuck 42 of the adhesive head 41 is mounted on the substrate P on the adhesive stage. [0147] Step S3F: The control device 7 lowers the transfer head 81 and enters the chuck 82 into the cleaning space 62c of the fifth nozzle 62B of the cleaning device 6B. [0148] Step S3G: Control device 7, Is the same as step S6, Spray powdery dry ice from the air blowing port 62a, Remove and clean the foreign matter attached to the lower surface (suction surface) of the collet 82, The removed foreign matter is sucked from the air suction port 62b and is discharged toward the dust collecting unit 67 (FIG. 24). [0149] Step S3H: The control device 7 raises the transfer head 81. [0150] Step S3J: The control device 7 moves the transfer head 81 toward the transfer head receiving position. [0151] Step S3O: The control device 7 moves the adhesive head 41 toward the fifth nozzle 62B of the cleaning device 6B. [0152] Step S3P: The control device 7 lowers the chuck 42 of the adhesive head 41 and enters the cleaning space 62c of the fifth nozzle 62B. [0153] Step S3I: Control device 7, Is the same as step S6, Spray powdery dry ice from the air blowing port 62a, Remove and clean the foreign matter attached to the lower surface (suction surface) of the chuck 42, The removed foreign matter is sucked from the air suction port 62b and is discharged toward the dust collecting unit 67 (FIG. 25). [0154] Step S3Q: The control device 7 moves the adhesive head 41 upward to retreat. [0155] Again, Actions before step S21, The operation is the same as that before step S1 in the first embodiment. And The operation of taking out and carrying out the substrate P after step S3N is the same as that of the first embodiment. [0156] A flip-chip bonding machine according to Modification 3, It is a function of installing a cleaning device on the intermediate stage. The intermediate stage is set up: Blow out powdered dry ice, Suction nozzle, Furthermore, a baffle of a wafer can be placed on the upper part of the baffle. Open the baffle of the intermediate stage, After the surface of the wafer that has been picked up and held by the chuck of the transfer head is cleaned by the dry ice cleaning function, Close the baffle and set the wafer on the baffle. Since then, The chip is picked up by the adhesive head, When moving, the baffle is opened again and the suction surface of the chuck of the transfer head is washed by the dry ice washing function. Since then, It is also possible to clean the suction surface of the chuck of the end of the adhesive head. [Embodiment 4] [0157] FIG. 31 is a schematic plan view showing a flip-chip bonding machine of Embodiment 4. Figure 32 illustrates picking up the flip-chip when viewed from the direction of arrow A in Figure 31. Diagram of the movement of the transfer head and the adhesive head. [0158] Flip-chip adhesive machine 10C, Is roughly having: Wafer supply unit 1, And pickup section 2C, Intermediate stage section 3C, And adhesive part 4A, And transportation department 5, Washing device 6C, And substrate supply unit 9K, And board carrying out part 9H, And a control device 7 for monitoring and controlling the operation of each unit. [0159] the pickup section 2C, In addition to the configuration of the pickup section 2A, The stage recognition camera 24 is provided for recognizing the back surface of the wafer D and the upper surface (suction surface) of the chuck 22. [0160] the intermediate stage portion 3C, Is with: Intermediate stage 31 on which wafer D is temporarily placed, And a stage recognition camera 32 for identifying the intermediate stage 31, And a down-view camera 33 for identifying the rear surface of the wafer D and the lower surface (suction surface) of the chuck 22. [0161] The cleaning device 6C can wash the back surface of the wafer D placed on the intermediate stage 31 and the surface of the intermediate stage 31 from above. The back surface of the wafer D held on the chuck 22 of the flip-chip head 21A and the lower surface (suction surface) of the chuck 22 can be washed from above. And The cleaning device 6C can wash the surface of the wafer D held on the chuck 82 of the transfer head 81 and the lower surface (suction surface) of the chuck 82 from below, The surface of the wafer D held on the chuck 42 of the adhesive head 41 and the lower surface (suction surface) of the chuck 42 can be washed from below. [0162] Next, The cleaning device of Example 4 will be described using FIG. 33. Fig. 33 is a block diagram of the cleaning device. [0163] a washing device 6C, Yes: First nozzle 61, And second nozzle 62, And the third nozzle 61A, And the fourth nozzle 62C, And a carbon dioxide supply source 63 that supplies liquid carbon dioxide, And an air supply source 64 that supplies compressed air (pressurized gas), And supplying powdered dry ice produced by mixing liquid carbon dioxide and compressed air to the first nozzle 61, Second nozzle 62, Supply pipes 65a to 65d of the third nozzle 61A and the fourth nozzle 62C, 65g, 65h. Washing device 6C, Is further equipped with: Will be made by the first nozzle 61, Second nozzle 62, The discharge pipes 66a to 66e for the third nozzle 61A and the fourth nozzle 62C to carry foreign matter removed from the wafer, And dust collecting unit 67 for recovering foreign objects, And valves 68a to 68j provided between the supply piping and the discharge piping, And ion generator 69. [0164] The fourth nozzle 62C is cleaned by the same operation as that of the second nozzle 62. [0165] Next, The adhesion method (the manufacturing method of the semiconductor device) performed by the flip-chip adhesion machine of Example 4 is demonstrated using FIGS. 35-38. Fig. 34 is a cross-sectional view of a fourth nozzle during wafer cleaning. Fig. 35 is a cross-sectional view of the chuck of the transfer head of the fourth nozzle during cleaning. 36 to 38 are flowcharts showing a bonding method performed by the flip chip bonding machine of Example 4. Terminals E, F is the same as terminal E, F to connect. Terminals A, 37 B is the same as terminal A, B connected. [0166] Step S51: Control device 7, Is the same as step S1, The wafer D is picked up by the pickup flip-chip 21A. [0167] Step S52: Control device 7, Is the same as step S2, Move the pickup flip head 21A. [0168] Step S53: Control device 7, Is the same as step S3, Rotate the pick up flip head 21A 180 degrees, The bump (surface) of the wafer D is turned to face downward, The wafer D is transferred to the transfer head 81. [0169] Step S54: After step S53 or in parallel, The control device 7 moves the cleaning space 61c of the first nozzle 61 to the chuck 22 of the flip-chip head 21A and moves it downward toward the wafer D held. [0170] Step S55: Control device 7, Is the same as step S5, Dry ice is sprayed from the air blowing port 61a to remove foreign matter adhering to the back surface of the wafer D. The removed foreign matter is sucked from the air suction port 61b through the discharge pipe 66a and the like and is discharged to the dust collection unit 67. [0171] Step S56: The control device 7 raises the cleaning space 61c of the first nozzle 61, It moves from the wafer D held by the chuck 22 of the pickup head 21. [0172] Step S57: Control device 7, Is the same as step S7, The wafer D is picked up from the chuck 22 of the pickup head 21A by the chuck 82 of the transfer head 81, Acceptance of wafer D is performed. [0173] Step S58: After step S57, The control device 7 moves the cleaning space 61c of the first nozzle 61 toward the chuck 22 of the pickup flip-chip 21A and descends. [0174] Step S59: Control device 7, Is the same as step S5, Dry ice is sprayed from the air blowing port 61 a to remove foreign matter adhering to the surface of the suction surface of the chuck 22. The removed foreign matter is sucked from the air suction port 61b through the discharge pipe 66a and the like and is discharged to the dust collection unit 67. [0175] Step S5A: The control device 7 raises the cleaning space 61c of the first nozzle 61, Moves from the chuck 22 of the pickup flip head 21A. [0176] Step S5B: Control device 7, Is to reverse the pickup flip head 21A, The suction surface of the chuck 22 faces downward. [0177] Step S42: After step 57, The control device 7 moves the transfer head 81 toward the intermediate stage 31. [0178] Step S43: The control device 7 mounts the wafer D held on the transfer head 81 on the intermediate stage 31. [0179] Step S44: After step 4C, The control device 7 moves (falls) the cleaning space 61c of the third nozzle 61A toward the wafer D placed on the intermediate stage 31. [0180] Step S45: Control device 7, Is the same as step S3, Spray powdery dry ice from the air blowing port 61a, Remove and clean the foreign matter adhering to the surface of the wafer D, The removed foreign matter is sucked from the air suction port 61b and is discharged toward the dust collecting unit 67 (FIG. 14). [0181] Step S46: Control device 7, As shown in Figure 15, The third nozzle 61A is moved (raised) from the intermediate stage 31. [0182] Step S47: The control device 7 picks up the wafer D from the intermediate stage 31 through the chuck of the adhesive head 41. [0183] Step S48: The control device 7 determines whether the intermediate stage 31 needs to be cleaned by the stage recognition camera 32. If YES, move to step S49, In the case of NO, the process returns to step 43. [0184] Step S49: The control device 7 moves (falls) the cleaning space 61c of the third nozzle 61A toward the intermediate stage 31. [0185] Step S4A: Control device 7, As in step S15, The dry ice is sprayed from the air blowing port 61a to remove and clean the foreign matters adhering to the surface of the intermediate stage 31. The removed foreign matter is sucked from the air suction port 61b and is discharged toward the dust collecting unit 67 (FIG. 14). [0186] Step S4B: The control device 7 moves (raises) the third nozzle 61A from the intermediate stage 31. [0187] Step S4C: The control device 7 moves the transfer head 81 upwards of the camera 33, The lower surface (suction surface) of the collet 82 is imaged. [0188] Step S4D: The control device 7 determines whether or not cleaning is required from a photographed image of the lower surface (suction surface) of the chuck 22. If YES, move to step S4E, In the case of NO, the process returns to step S41. [0189] Step S4E: The control device 7 moves and lowers the transfer head 81 upwards of the cleaning device, The chuck 82 is inserted into the cleaning space 62c of the fourth nozzle 62C. [0190] Step S4F: Control device 7, Is the same as step S6, Spray powdery dry ice from the air blowing port 62a, Remove and clean the foreign matter adhering to the adsorption surface of the chuck 82, The removed foreign matter is sucked from the air suction port 62b and discharged toward the dust collecting unit 67 (Fig. 34). [0191] Step S4G: The control device 7 moves the adhesive head 41 upward to the downward-looking camera 45, The lower surface (surface) of the wafer D held by the chuck 42 of the adhesive head 41 is imaged. [0192] Step S4H: The control device 7 determines whether or not cleaning is required from a photographed image of the lower surface (surface) of the wafer D held by the chuck 42 of the adhesive head 41. If YES, move to step S4I, In the case of NO, the process proceeds to step S4K. [0193] Step S4I: The control device 7 moves the adhesive head 41 upwards and downwards of the cleaning device. The wafer D is put into the cleaning space 62 c of the second nozzle 62. [0194] Step S4J: Control device 7, Is the same as step S6, Spray powdery dry ice from the air blowing port 62a, Remove and clean the foreign matter adhering to the surface of the wafer D, The removed foreign matter is sucked from the air suction port 62 b and is discharged toward the dust collecting unit 67. [0195] Step S4K: The control device 7 raises the adhesive head 41 and moves (raises) the wafer D from the second nozzle 62, The adhesive head 41 is moved toward the adhesive stage. [0196] Step S4L: The control device 7 lowers the adhesive head 41, Mount the wafer D held on the adhesive head 41 on the substrate P. Step S4M: The control device 7 moves the adhesive head 41 upward to the downward-looking camera 45, The lower surface (suction surface) of the chuck 42 is imaged. [0197] Step S4N: The control device 7 determines whether or not cleaning is required from a photographed image of the lower surface (suction surface) of the chuck 42 of the adhesive head 41. If YES, move to step S4O, In the case of NO, the process proceeds to step S47. [0198] Step S4O: The control device 7 moves the adhesive head 41 upwards and downwards of the cleaning device. The chuck 42 is inserted into the cleaning space of the second nozzle 62. [0199] Step S4P: Control device 7, Is the same as step S6, Spray powdery dry ice from the air blowing port 62a, Remove and clean the foreign matter attached to the lower surface (suction surface) of the chuck 42, The removed foreign matter is sucked from the air suction port 62 b and is discharged toward the dust collecting unit 67. [0200] Again, Actions before step S51, The operation is the same as that before step S1 in the first embodiment. And The operation of taking out and carrying out the substrate P after step S4L is the same as that of the first embodiment. [0201] According to Example 4, By washing: Foreign matter on the front and back of the wafer when picking up the wafer from the wafer, Foreign matter on the intermediate stage accumulated by this, Pickup head attached to the chuck during wafer transfer, And both sides of the head, The surface of the laminated wafer, Foreign matter on the back is greatly reduced. [0202] <Modification 4> Next, Use Article 34 35, 39 to 41 illustrate an adhesion method (a method of manufacturing a semiconductor device) performed by a flip chip adhesion machine according to a modification (modification 4) of the fourth embodiment. 39 to 41 are flowcharts showing a bonding method according to a fourth modification of the flip-chip bonding machine shown in FIG. 31. [0203] Adhesion method of modification 4, Although it is the same as steps S51 to S54 of the adhesion method of the fourth embodiment, But the other steps are different. Terminals E, F is the same as terminal E, F connection, Terminals G, Figure 39 H is the same as G, Fig. 40 H connection, Terminal C, Figure 40 D is the same as C, D connection. [0204] The steps subsequent to step S57 of the adhesion method of the modification 4 are as follows. [0205] Step S61: The control device 7 moves the transfer head 81 above the fourth nozzle 62C of the cleaning device 6C. [0206] Step S62: The control device 7 lowers the transfer head 81 and the wafer D held by the chuck 82 enters the cleaning space 62c of the fourth nozzle 62C of the cleaning device 6C. [0207] Step S63: Control device 7, Is the same as step S6, Spray powdery dry ice from the air blowing port 62a, Remove and clean the foreign matter adhering to the surface of the wafer D, The removed foreign matter is sucked from the air suction port 62b and discharged toward the dust collecting unit 67 (Fig. 33). [0208] Step S64: The control device 7 raises the transfer head 81 and moves (raises) the wafer D from the fourth nozzle 62C. [0209] Step S65: The control device 7 moves the transfer head 81 above the intermediate stage 31. [0210] Step S66: The control device 7 lowers the transfer head 81. [0211] Step S67: The control device 7 mounts the wafer D held on the transfer head 81 on the intermediate stage 31. [0212] Step S68: The control device 7 raises the transfer head 81 and raises the chuck 22 from the wafer D. [0213] Step S69: The control device 7 moves the transfer head 81 above the fourth nozzle 62C of the cleaning device 6C. [0214] Step S6A: The control device 7 lowers the transfer head 81 and enters the chuck 82 into the cleaning space 62c of the fourth nozzle 62C of the cleaning device 6C. [0215] Step S6B: Control device 7, Is the same as step S6, Spray powdery dry ice from the air blowing port 62a, Remove and clean the foreign matter attached to the adsorption surface of the chuck, The removed foreign matter is sucked from the air suction port 62b and discharged toward the dust collecting unit 67 (Fig. 33). [0216] Step S6C: The control device 7 raises the transfer head 81 and moves (raises) the wafer D from the fourth nozzle 62C. [0217] Step S6D: The control device 7 moves the transfer head 81 toward the receiving position of the wafer D. [0218] After step S68, The steps subsequent to step S44 in FIG. 40 are performed. Steps S44 to S4B of the fourth modification are the same as steps S44 to S4B of the fourth embodiment. And After step 47 in Figure 40, The steps below step S4K in FIG. 41 are performed. Steps S4K to S4P of the fourth modification are the same as steps S4K to S4P of the fourth embodiment. [0219] Although the embodiment of the invention invented by the present invention has been described in detail, Examples and modifications, But this invention, It is not limited to the above embodiments and modifications, Various changes can of course be made. [0220] For example, In the embodiments and modifications, The washing device explained the powdery dry ice produced by mixing liquid carbon dioxide and compressed air. But not limited to this, Granulated dry ice is formed from liquid carbon dioxide by a granulator, A crusher forms crushed dry ice (granular dry ice) from the granular dry ice, The crushed dry ice may be supplied to the nozzle from a carrier gas having a predetermined pressure. [0221] In the embodiments and the modification examples, it has been described that the nozzle is covered and cleaned by covering the entire wafer. But not limited to this, The wafer may be cleaned by scanning the wafer length with a horizontally long nozzle of the wafer width. And The entire wafer may be cleaned by a plurality of thin nozzles. And A thin nozzle may scan and clean the entire wafer. [0222] And in Embodiment 1, 2, 4 in, Although the cleaning device is described as having a plurality of nozzles, But not limited to this, It is also possible to install a plurality of cleaning devices having one nozzle. [0223] In the fourth embodiment and the fourth modification, it has been described that the lower-view camera determines whether cleaning is necessary before cleaning, and But not limited to this, The back side of the wafer that has been cleaned by the cleaning device before adhesion is confirmed by a downward-looking camera, In the case of a specified number of foreign objects, After cleaning is performed again, adhesion may be performed. And Look at the back of the wafer with a downward looking camera, It is also possible to wash until the foreign matter is missing. And Check the chuck by looking down at the camera, It is also possible to wash until the foreign matter is missing. thus, Because wafers with foreign objects are not stacked and mounted, Therefore, product defects can be reduced. [0224] In Embodiment 4 and Modification 4, before the cleaning of the chuck of the flip-chip is picked up, the camera determines whether it is necessary to wash, If it is judged that washing is necessary, it may be washed. [0225] In Example 4 and Modification 4, the back surface of the wafer D held by the chuck for picking up the flip-chip was not cleaned. Instead, it may be washed by the first nozzle. In this case, It is also possible to use a camera to determine whether washing is necessary. [0226] In the fourth embodiment and the fourth modification, the back surface of the wafer was cleaned twice by the first nozzle and the third nozzle. But it can be washed only by either party, After washing in the first nozzle, The third nozzle may be used only when it is judged that washing is required. [0227] And Embodiment 1, Modification 1, Modification 2 Example 2 Example 3 and Modification 3, Although it is different from Embodiment 4 and Modification 4, Take pictures without the substrate recognition camera and the down-view camera, However, imaging is performed in the same manner as in Example 4 and Modified Example 4, Based on camera information, It is also possible to determine whether washing is necessary. [0228] In the embodiments and modifications, Although it has been explained that The ionizer blows out the dry ice, But not limited to this, The nozzle and the intermediate stage are made of a conductive material (metal, Carbon resin, etc.), Grounding is also possible. Both the ionizer and the grounded conductive material may be used. [0229] Furthermore, in Example 1 and Modified Example 1, 2 Although it has been explained that a wafer is picked up by a pick-up head from a wafer supply unit and inverted (reversed), and a wafer is received toward an adhesive head, a flip-chip wafer adhering machine adhered to the substrate by the adhesive head, But not limited to this, Picking up a wafer from a wafer supply unit by a pick-up head, Placed on the intermediate stage, The wafer placed on the intermediate stage is reversed from the intermediate stage to be received by another intermediate stage. It may be picked up by an adhesive head and adhered to a substrate. [0230] and an adhesive head for adhering the flip-chip, When the sticking time and washing time become longer, Set plural sticky heads to implement it interactively: Wafer cleaning, Adhesion and chuck cleaning are also available. [0231] In the embodiments and modifications, Although the flip chip bonding machine is illustrated, But not limited to this, A wafer sorter that picks up a wafer from a wafer supply unit and places it on a tray or the like is applicable.

[0232]

1‧‧‧ Wafer Supply Department

11‧‧‧ wafer

12‧‧‧ Wafer Holder

13‧‧‧ jacking unit

14‧‧‧chip ring

15‧‧‧extension ring

16‧‧‧ Cutting Tape

17‧‧‧ support ring

2‧‧‧Pick up department

2A‧‧‧Pick up department

2C‧‧‧Pick up department

21‧‧‧Pickup head

21A‧‧‧ Pick up flip head

22‧‧‧ chuck

23‧‧‧Y Drive Unit

23A‧‧‧Y Drive Unit

24‧‧‧ stage recognition camera

3‧‧‧ Intermediate Stage Department

3B‧‧‧ Intermediate Stage Department

3C‧‧‧Intermediate Stage Department

31‧‧‧ intermediate stage

31B‧‧‧Intermediate stage

32‧‧‧ stage recognition camera

33‧‧‧look down camera

4‧‧‧ Adhesive

4A‧‧‧Adhesive

41‧‧‧Stick head

42‧‧‧Chuck

43‧‧‧Y Drive Unit

44‧‧‧ substrate recognition camera

45‧‧‧look down camera

5‧‧‧Transportation Department

51‧‧‧ substrate handling tray

52‧‧‧pallet track

6‧‧‧washing device

6A‧‧‧washing device

6B‧‧‧washing device

6C‧‧‧washing device

61‧‧‧first nozzle

61a‧‧‧Air blowing outlet

61b‧‧‧Air intake

61c‧‧‧washing space

62‧‧‧Second Nozzle

62a‧‧‧Air blowing outlet

62b‧‧‧air intake

62B‧‧‧Fifth nozzle

62c‧‧‧washing space

62C‧‧‧Fourth nozzle

63‧‧‧CO2 supply source

64‧‧‧Air supply source

65a ～ 65h‧‧‧ supply piping

66a ～ 66e‧‧‧Discharge piping

67‧‧‧Dust collection unit

68a ～ 68j‧‧‧Valve

69‧‧‧Ionizer

7‧‧‧control device

8‧‧‧ Transfer Department

81‧‧‧ transfer head

82‧‧‧Chuck

83‧‧‧Y Drive

9H‧‧‧Substrate removal section

9K‧‧‧ Substrate Supply Department

10‧‧‧ Flip Chip Adhesive Machine

10A‧‧‧Flip Chip Adhesive Machine

10B‧‧‧Flip Chip Adhesive Machine

10C‧‧‧Flip Chip Adhesive Machine

D‧‧‧Chip

P‧‧‧ substrate

SS‧‧‧Bezel

[0008] [FIG. 1] A conceptual view of the flip-chip wafer bonding machine of Example 1 as viewed from above.第 [Fig. 2] A diagram explaining the operation of the pickup head and the adhesive head when viewed from the direction of arrow A in Fig. 1.第 [Fig. 3] A schematic cross-sectional view of a main part of the wafer supply section of Fig. 1 is shown.第 [Figure 4] Block diagram of the cleaning device in Figure 1.第 [Fig. 5] A cross-sectional view of the first nozzle and its periphery in Fig. 4.第 [FIG. 6] Sectional view of the second nozzle and its periphery in FIG.第 [Fig. 7] The operation flow chart of the flip chip bonding machine in Fig. 1. [Fig. 8] Operation flowchart of the first modification of the flip chip adhesion machine of Fig. 1 [Fig. 9] Operation flowchart of the first modification of the flip chip adhesion machine of Fig. 1. [Fig. 10] Fig. 1 is an operation flowchart of the second modification example of the flip-chip bonding machine shown in Fig. 1. [Fig. 11] A conceptual view of the flip-chip die attacher of Example 2 as viewed from above. [Fig. 12] A diagram illustrating the movements of the pickup head and the adhesive head when viewed from the direction of arrow A in Fig. 11.第 [Fig. 13] A block diagram of the washing device of Fig. 11.第 [Fig. 14] Sectional view of the third nozzle and its periphery in Fig. 13.第 [Fig. 15] Sectional view of the third nozzle and its periphery in Fig. 13.第 [Fig. 16] Sectional view of the third nozzle and its periphery in Fig. 13.第 [Fig. 17] Fig. 11 is a flowchart of the operation of the flip chip bonding machine.第 [Fig. 18] Fig. 11 is a flowchart of the operation of the flip chip bonding machine. [Fig. 19] A conceptual view of the flip-chip bonding machine of Example 3 as viewed from above. [Fig. 20] A diagram illustrating the movements of the pickup head and the adhesive head when viewed from the direction of arrow A in Fig. 19.第 [Fig. 21] Fig. 19 is a block diagram of the cleaning device.第 [Fig. 22] Sectional view of the fifth nozzle and its periphery in Fig. 21. [Fig. 23] A cross-sectional view of the fifth nozzle and its periphery in Fig. 21.第 [Fig. 24] Sectional view of the fifth nozzle and its periphery in Fig. 21. [Fig. 25] A cross-sectional view of the fifth nozzle and its periphery in Fig. 21.第 [Fig. 26] Fig. 19 is a flowchart of the operation of the flip chip bonding machine.第 [Fig. 27] Fig. 19 is a flowchart of the operation of the flip chip bonding machine.第 [Fig. 28] Fig. 19 is a flowchart of the operation of the flip chip bonding machine. [Fig. 29] Fig. 19 is a flowchart showing the operation of the third modification of the flip-chip die attacher of Fig. 19. [Fig. 30] Fig. 19 is a flowchart showing the operation of the third modification of the flip-chip bonding machine shown in Fig. 19. [Fig. 31] A conceptual view of the flip-chip bonding machine of Example 4 as viewed from above. [Fig. 32] A diagram illustrating the movements of the pickup head and the adhesive head when viewed from the direction of arrow A in Fig. 31. [Fig. 33] A block diagram of the cleaning device of Fig. 31. [Fig. 34] A sectional view of the fourth nozzle and its periphery in Fig. 33. [Fig. 35] Sectional view of the fourth nozzle and its periphery in Fig. 33.第 [Fig. 36] Fig. 31 is a flowchart of the operation of the flip chip bonding machine.第 [Fig. 37] Fig. 31 is a flowchart showing the operation of the flip-chip bonding machine.第 [Fig. 38] Fig. 31 is a flowchart of the operation of the flip chip bonding machine. [Fig. 39] Fig. 31 is an operation flowchart of Modification 4 of the flip-chip die attacher of Fig. 31. [Fig. 40] Fig. 31 is a flowchart showing the operation of the fourth modification of the flip-chip bonding machine shown in Fig. 31. [Fig. 41] Fig. 31 is a flowchart showing the operation of the fourth modification of the flip-chip bonding machine shown in Fig. 31.

Claims (33)

A flip chip bonding machine includes: a wafer supply unit that holds a wafer having a bulge, an adhesion stage for mounting the wafer on a substrate or a wafer that has been mounted, and a method for adsorbing the wafer. The first head of the chuck, the second head having the chuck for adsorbing the wafer, and a cleaning device for washing the wafer between the wafer supply section and the adhesive stage with dry ice. One head picks up the wafer from the wafer supply unit and reverses it up and down, and the second head picks up the wafer from the first head. For example, the flip-chip bonding machine of the first scope of the patent application, wherein: the cleaning device is provided with a first nozzle for blowing out the dry ice, the first nozzle is configured to connect the Rinse the opposite side and wash the back. For example, the flip chip bonding machine of the first or second patent application scope, wherein: the cleaning device is provided with a second nozzle for blowing out the dry ice, the second nozzle is used to pick up the second head from the first head The surface of the wafer having the bump is cleaned. For example, the flip chip bonding machine of the second scope of the patent application, wherein the first nozzle is to clean the chuck of the first head. For example, the flip-chip bonding machine of the third item of the patent application, wherein the second nozzle cleans the chuck of the second head. For example, the flip chip bonding machine of the first scope of the patent application, wherein the second head is an adhesive head that mounts the wafer on the substrate or a wafer that has been mounted. For example, the flip-chip bonding machine for patent application No. 1 further includes: an intermediate stage on which the wafer is placed by the second head, and a third head having a chuck for adsorbing the wafer, The third head picks up the wafer from the intermediate stage and mounts the wafer on the substrate or the mounted wafer. The cleaning device has a third nozzle that blows out dry ice. The third nozzle is a The wafer placed on the intermediate stage is cleaned on the back surface opposite to the surface having the ridges. For example, the flip-chip bonding machine for item 7 of the scope of patent application, wherein: the cleaning device further includes a second nozzle for blowing out dry ice, the second nozzle is the foregoing for picking up the third head from the intermediate stage The surface of the wafer having the ridges was cleaned. For example, the flip-chip bonding machine for the seventh or eighth aspect of the patent application, wherein the third nozzle cleans the upper surface of the intermediate stage. For example, the flip-chip bonding machine of the eighth aspect of the patent application, wherein the second nozzle cleans the chuck of the third head. For example, the flip-chip bonding machine for item 7 of the scope of patent application, wherein the aforementioned intermediate stage is directed toward the position where the wafer is received from the second head, the position of the third nozzle, and the third The head and the position where the wafer is received can be moved. For example, the flip-chip bonding machine for item 7 of the scope of patent application, wherein: sets a plurality of the aforementioned intermediate stages, each moving in a non-interfering path toward: the position where the aforementioned wafer is received from the aforementioned first head, and The position of the third nozzle and the position of receiving the third head and the wafer can be moved. For example, the flip-chip bonding machine for item 9 of the scope of the patent application, further comprising: (i) a stage recognition camera that mounts a back surface of the wafer placed on the intermediate stage and an image of the intermediate stage; (ii) the third nozzle, Based on the imaging information of the camera identified by the stage, the back of the wafer placed on the intermediate stage and the intermediate stage are cleaned. For example, the flip-chip bonding machine of the tenth aspect of the patent application, further comprising: (i) a first look-down camera that captures an image of the surface of the wafer held by the third head and a chuck of the third head; The two nozzles clean the surface of the wafer held by the third head and the chuck of the third head based on the imaging information of the first downward-looking camera. For example, the flip-chip bonding machine of the eighth aspect of the patent application, wherein: the cleaning device further has a fourth nozzle for blowing out dry ice, and the fourth nozzle is to move the wafer from the first head by the second head. The surface of the wafer picked up by the head is cleaned. For example, the flip-chip bonding machine of the eighth aspect of the patent application, wherein the fourth nozzle cleans the chuck of the second head. For example, a flip-chip bonding machine with a patent application No. 16 further includes: a second look-down camera that captures the image of the chuck of the second head, and the fourth nozzle, which is based on the image taken by the second look-down camera Information, wash the chuck of the second head. For example, the flip chip bonding machine with the scope of patent application No. 14 or 17, wherein: the cleaning device further includes a first nozzle and a second nozzle which blow out dry ice, the first nozzle is a pickup of the first head The back of the wafer and the chuck of the first head are cleaned. For example, in the flip-chip bonding machine of the 18th patent application scope, further comprising: (i) a second stage recognition camera having an image of the back of the first head chuck and the wafer held by the first head; The nozzle cleans the chuck of the first head and the back surface of the wafer held by the first head based on the imaging information recognized by the camera on the second stage. For example, the flip-chip bonding machine of the first scope of the patent application, further comprising: an intermediate stage on which the wafer is placed by the second head, and the wafer is picked up from the intermediate stage and placed on the intermediate stage. The substrate or the third head used for the mounted wafer. The third head is a chuck having the wafer adsorbed thereon. 洗 The cleaning device is provided with a fifth nozzle which blows out dry ice. The intermediate stage is The fifth nozzle is provided with a stage that can be opened and closed. The wafer is placed on the stage when the stage is closed. 第五 The fifth nozzle is held by the second head when the stage is opened. The wafer has the raised surface, the chuck of the second head from which the wafer has been removed, the surface of the wafer the third head picked up from the intermediate stage, and the chuck of the third head are cleaned. A method for manufacturing a semiconductor device includes: (a) a process of preparing a wafer ring for holding a wafer having a bump; and (b) a process of preparing a substrate on which the wafer is mounted; and (c) removing the wafer from the wafer ring. The process of picking up and reversing the wafer, and (d) the process of washing the wafer with dry ice after the process of (c), and (e) the process of picking up the wafer after the process (c), and (f) A process for mounting the wafer on the substrate or the wafer after the process (d). For example, the method for manufacturing a semiconductor device according to claim 21, wherein: (i) the aforementioned process (c) is to pick up the wafer by a first head having a chuck, and (ii) the aforementioned process (e) is to use a second head having a chuck to The wafer is picked up from the first head, and in the step (f), the wafer is placed on the substrate or a wafer that has been mounted by the second head. For example, the method for manufacturing a semiconductor device according to item 22 of the patent application, wherein: (d) the process includes: (d1) a process of cleaning the back surface of the wafer picked up by the first head, and (d2) A process in which the second head cleans the surface of the wafer picked up by the first head and having the raised surface. For example, the method for manufacturing a semiconductor device according to claim 23, wherein (i) the step (d) further includes: (d3) a process of cleaning the chuck of the first head. For example, the method for manufacturing a semiconductor device according to claim 21, wherein: (i) the aforementioned process (c) is to pick up the wafer by a first head having a chuck, and (ii) the aforementioned process (e) is to use a second head having a chuck to The wafer is picked up from the first head and placed on the intermediate stage, and in the step (f), the wafer is picked up from the intermediate stage by the third head having a chuck. For example, the method for manufacturing a semiconductor device according to item 25 of the patent application, wherein: (d) the process includes: (d1) washing the reverse side of the wafer having the ridges on the intermediate stage, and washing the reverse side of the wafer; A cleaning process, and (d2) a process of cleaning the wafer mounting surface of the intermediate stage. For example, the method for manufacturing a semiconductor device according to item 25 of the patent application, wherein: 其中 the intermediate stage is a stage having an openable and closable stage; the process (d) is provided with: (d1) the state where the stage is opened A process of cleaning the back surface of the wafer held by the second head opposite to the raised surface, and (d2) a process of placing the wafer on the stage with the stage closed, and ( d3) a process of washing the suction surface of the chuck of the second head with the stage opened, and (d4) suction of the chuck of the third head with the stage opened The process of washing face. For example, the method for manufacturing a semiconductor device according to item 26 of the patent application, wherein (i) the step (d) further includes: (d3) cleaning the surface of the wafer having the bulge held by the chuck of the third head And (d4) a process of washing the suction surface of the chuck of the third head. For example, the method of manufacturing a semiconductor device according to item 28 of the patent application, wherein: (d) the process further includes: (d5) a process of cleaning the surface of the wafer held by the chuck of the second head, and (d6) A process of washing the suction surface of the chuck of the second head. For example, the method for manufacturing a semiconductor device according to claim 29, wherein (i) the process (d) further includes: (d7) a process of cleaning the back surface of the wafer held by the chuck of the first head, and (d8) A process of washing the suction surface of the chuck of the first head. For example, the method for manufacturing a semiconductor device according to item 27 of the patent application, wherein: (d) the process further includes: (d9) a process of imaging the mounting surface side of the intermediate stage, and (d10) the process of The process of photographing the lower side of the three-head chuck, the aforementioned (d2) process is based on the imaging information of the aforementioned (d9) process, and the aforementioned intermediate stage is washed, the aforementioned (d3) process is based on the aforementioned (d10) process Clean the surface of the wafer held by the chuck of the third head, the process of (d4) is based on the imaging information of the process of (d10), the adsorption surface of the chuck of the third head Wash. For example, the method for manufacturing a semiconductor device according to claim 29, wherein (i) the process (d) further includes: (d11) a process of imaging the surface of the wafer held by the chuck of the second head, and ( d12) the process of photographing the suction surface of the chuck of the second head, the process of (d5) is based on the imaging information of the process of (d11), washing the surface of the wafer held by the chuck of the second head The process of (d6) is to clean the chuck of the second head according to the imaging information of the process of (d12). For example, the method for manufacturing a semiconductor device according to claim 30, wherein (i) the process (d) further includes: (d13) a process of imaging the back surface of the wafer held by the chuck of the first head, and ( d14) The process of photographing the suction surface of the chuck of the first head, The process of (d7) is based on the imaging information of the process of (d13), cleaning the surface of the wafer held by the chuck of the first head The aforementioned (d8) process is to wash the chuck of the first head according to the imaging information of the aforementioned (d14) process.