TW201814881A - MicroLED display panel - Google Patents
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Abstract
Description
本發明係有關一種顯示面板，特別是關於一種微發光二極體（microLED）顯示面板。The present invention relates to a display panel, and more particularly to a micro LED display panel.
微發光二極體（microLED、mLED或μLED）顯示面板為平板顯示器（flat panel display）的一種，其係由尺寸等級為1~10微米之個別精微（microscopic）發光二極體所組成。相較於傳統液晶顯示面板，微發光二極體顯示面板具較大對比度及較快反應時間，且消耗較少功率。微發光二極體與有機發光二極體（OLED）雖然同樣具有低功耗的特性，但是，微發光二極體因為使用三-五族二極體技術（例如氮化鎵），因此相較於有機發光二極體具有較高的亮度（brightness）、較高的發光效能（luminous efficacy）及較長的壽命。The micro-light emitting diode (microLED, mLED or μLED) display panel is a type of flat panel display composed of individual microscopic light-emitting diodes of a size scale of 1 to 10 micrometers. Compared with the conventional liquid crystal display panel, the micro-light-emitting diode display panel has a large contrast ratio and a fast response time, and consumes less power. Although the micro-light-emitting diode and the organic light-emitting diode (OLED) also have low power consumption characteristics, the micro-light-emitting diode uses three-five-group diode technology (for example, gallium nitride), so The organic light-emitting diode has higher brightness, higher luminous efficacy and longer lifetime.
使用薄膜電晶體（TFT）的主動驅動方式為一種普遍使用的驅動機制，其可以和微發光二極體結合以製造顯示面板。但是，薄膜電晶體使用的是互補金屬氧化物半導體（CMOS）製程，而微發光二極體則是使用覆晶（flip chip）技術，兩者會產生熱失配（thermal mismatch）問題，且薄膜電晶體的製程較為複雜。在低灰階顯示時，由於驅動電流很小，會受到微發光二極體的漏電流而影響灰階顯示。The active driving method using a thin film transistor (TFT) is a commonly used driving mechanism that can be combined with a micro light emitting diode to manufacture a display panel. However, the thin film transistor uses a complementary metal oxide semiconductor (CMOS) process, and the micro light emitting diode uses a flip chip technique, which causes thermal mismatch problems and a thin film. The process of the transistor is complicated. In the low gray scale display, since the driving current is small, the leakage current of the micro light emitting diode is affected to affect the gray scale display.
被動驅動方式為另一種驅動機制。傳統的被動式驅動顯示面板，其列驅動電路與行驅動電路係設於顯示面板的邊緣。然而，當顯示面板的尺寸變大或者解析度變高時，造成驅動器的輸出負載過大，過長的延遲時間使得顯示面板無法正常驅動。因此，被動式驅動機制無法適用於大尺寸的微發光二極體顯示面板。Passive drive is another drive mechanism. A conventional passive drive display panel has a column drive circuit and a row drive circuit disposed at an edge of the display panel. However, when the size of the display panel becomes large or the resolution becomes high, the output load of the driver is excessively large, and an excessively long delay time causes the display panel to be unable to drive normally. Therefore, the passive driving mechanism cannot be applied to a large-sized micro-light emitting diode display panel.
因此，亟需提出一種新穎的微發光二極體顯示面板，特別是大尺寸或高解析度的顯示面板，使其保有微發光二極體的優點且能改善傳統驅動機制的缺點。Therefore, there is a need to propose a novel micro-light-emitting diode display panel, particularly a large-sized or high-resolution display panel, which retains the advantages of the micro-light-emitting diode and can improve the disadvantages of the conventional driving mechanism.
鑑於上述，本發明實施例的目的之一在於提出一種微發光二極體顯示面板，有效降低驅動器的負載，以實現單一大尺寸高解析度微發光二極體顯示面板。在一實施例中採用被動驅動方式，可簡化顯示面板的製程，縮短微發光二極體的開啟時間，提高驅動電流，有效降低微發光二極體因漏電流對於灰階顯示所造成的影響。In view of the above, one of the objects of the embodiments of the present invention is to provide a micro-light emitting diode display panel, which effectively reduces the load of the driver to realize a single large-size high-resolution micro-light-emitting diode display panel. In one embodiment, the passive driving method is adopted, which can simplify the manufacturing process of the display panel, shorten the opening time of the micro light emitting diode, improve the driving current, and effectively reduce the influence of the leakage current on the gray scale display of the micro light emitting diode.
根據本發明實施例，微發光二極體顯示面板包含複數微發光二極體、基板及複數驅動器。基板用以承載該些微發光二極體，且基板的表面劃分為複數次區域。該些驅動器分別相應設於該些次區域的表面。在一實施例中，該些微發光二極體使用被動驅動方式。驅動器包含行驅動電路，藉由行導線連接並傳送行驅動信號至同一行微發光二極體的第一電極；及列驅動電路，藉由列導線連接並傳送列驅動信號至同一列微發光二極體的第二電極。驅動器包含低壓降穩壓器及驅動電路，其中低壓降穩壓器接收系統電源，據以產生穩壓電源，提供給驅動電路作為電源。According to an embodiment of the invention, the micro-light-emitting diode display panel comprises a plurality of micro-light emitting diodes, a substrate and a plurality of drivers. The substrate is used to carry the micro-light emitting diodes, and the surface of the substrate is divided into a plurality of sub-regions. The drivers are respectively disposed on the surfaces of the sub-regions. In an embodiment, the micro-light emitting diodes use a passive driving method. The driver comprises a row driving circuit, and the row driving wire is connected to and transmits the row driving signal to the first electrode of the same row of the micro light emitting diode; and the column driving circuit is connected by the column wires and transmits the column driving signal to the same column of the micro light emitting diode The second electrode of the polar body. The driver includes a low-dropout regulator and a driver circuit, wherein the low-dropout regulator receives power from the system to generate a regulated power supply to the driver circuit as a power source.
第一A圖顯示本發明實施例之微發光二極體（microLED）顯示面板100的俯視圖，第一B圖顯示第一A圖之微發光二極體顯示面板100的側視圖。本實施例之微發光二極體顯示面板100的架構較佳適用於大尺寸高解析度顯示面板，例如解析度為3840RGBx2160的顯示面板。在本說明書中，微發光二極體的尺寸等級為1~10微米。然而，會因產品的應用領域或將來技術的發展而更小。在本說明書中，“大尺寸”顯示面板係依目前業界的習慣，定義為10吋以上的顯示面板。然而，對於“大尺寸”顯示面板的定義會因產品的應用領域或將來技術的發展而有所改變。在本說明書中，“高解析度”顯示面板係依目前業界的習慣，定義為1080掃描線以上的顯示面板。然而，對於“高解析度”顯示面板的定義同樣會因產品的應用領域或將來技術的發展而有所改變。1A shows a top view of a micro LED display panel 100 according to an embodiment of the present invention, and FIG. 1B shows a side view of the micro LED display panel 100 of FIG. The architecture of the micro-light-emitting diode display panel 100 of the present embodiment is preferably applied to a large-sized high-resolution display panel, such as a display panel having a resolution of 3840 RGB x 2160. In the present specification, the micro-light emitting diode has a size rating of 1 to 10 μm. However, it will be smaller due to the application field of the product or the development of future technologies. In the present specification, the "large size" display panel is defined as a display panel of 10 inches or more according to the current industry practice. However, the definition of a "large size" display panel may vary depending on the application area of the product or the future development of the technology. In the present specification, the "high-resolution" display panel is defined as a display panel of 1080 or more scanning lines according to the current industry practice. However, the definition of a "high-resolution" display panel will also change depending on the application area of the product or the future development of the technology.
在本實施例中，微發光二極體顯示面板100包含基板11，用以承載複數微發光二極體（未顯示於圖式）。基板11的材質較佳為絕緣體（例如玻璃、壓克力），也可以為其他適於承載微發光二極體的材質。In the embodiment, the micro-light-emitting diode display panel 100 includes a substrate 11 for carrying a plurality of micro-light-emitting diodes (not shown). The material of the substrate 11 is preferably an insulator (for example, glass or acryl), and may be other materials suitable for carrying the micro-light emitting diode.
根據本實施例的特徵之一，基板11的表面劃分為複數次區域（sub-region）101。經劃分的該些次區域101並未實體切割開來，且基板11並非是將複數小區塊整合而成的，因此基板11為一個完整未切割的實體。換句話說，本實施例之微發光二極體顯示面板100係為單一（single或whole）或未分割（uncut）的顯示面板。第一A圖僅顯示簡化的次區域101劃分例子。以解析度3840RGBx2160的微發光二極體顯示面板100為例，基板11可劃分為80x54個次區域101，每一次區域101的解析度為48RGBx40，但也可以劃分為較多或較少的次區域101。According to one of the features of the embodiment, the surface of the substrate 11 is divided into a plurality of sub-regions 101. The divided sub-regions 101 are not physically cut, and the substrate 11 is not formed by integrating a plurality of cell blocks, so the substrate 11 is a complete uncut entity. In other words, the micro-light-emitting diode display panel 100 of the present embodiment is a single (single or whole) or uncut display panel. The first A diagram shows only a simplified example of the sub-region 101 division. Taking the micro-light-emitting diode display panel 100 with a resolution of 3840 RGB x 2160 as an example, the substrate 11 can be divided into 80×54 sub-regions 101, and the resolution of each region 101 is 48 RGB×40, but can also be divided into more or less sub-regions. 101.
根據本實施例的另一特徵，微發光二極體顯示面板100包含複數驅動器（driver）12，分別相應設於該些次區域101的表面（例如頂面）。第一A圖所示驅動器12係設於相應次區域101的表面的中央位置，但不限定於此。第一A圖例示每ㄧ次區域101設有一驅動器12，然而在其他實施例中，每ㄧ次區域101也可設有複數驅動器12。本實施例的驅動器12可製作為晶片形式的積體電路，藉由表面黏著技術（SMT），例如晶片玻璃（chip-on-glass, COG）或覆晶（flip chip）技術，將驅動器12接合（bond）於次區域101的表面。在一例子中，驅動器12與微發光二極體係設於基板11的次區域101的相同表面。According to another feature of the present embodiment, the micro-light-emitting diode display panel 100 includes a plurality of drivers 12 respectively disposed on surfaces (eg, top surfaces) of the sub-regions 101. The driver 12 shown in FIG. 1A is disposed at the center of the surface of the corresponding sub-region 101, but is not limited thereto. The first A diagram illustrates that each of the sub-regions 101 is provided with a driver 12. However, in other embodiments, each of the sub-regions 101 may be provided with a plurality of drivers 12. The driver 12 of the present embodiment can be fabricated as an integrated circuit in the form of a wafer, and the driver 12 is bonded by surface mount technology (SMT), such as chip-on-glass (COG) or flip chip technology. Bonded to the surface of the sub-region 101. In one example, the driver 12 and the micro-light emitting diode system are disposed on the same surface of the sub-region 101 of the substrate 11.
本實施例的微發光二極體顯示面板100還包含複數時序控制器（TCON）13，其可藉由導線（例如軟性電路板，未顯示於圖式）電性連接至基板11，再經由設於基板11表面的走線（未顯示於圖式）而電性連接至相應的驅動器12。在本實施例中，一時序控制器13可電性連接至少二驅動器12。換句話說，時序控制器13的數目少於驅動器12的數目。時序控制器13可藉由走線分別直接連接至相應的驅動器12；也可藉由走線連接至一驅動器12，經信號緩衝後，再藉由走線連接至另一驅動器12。The micro-light-emitting diode display panel 100 of the present embodiment further includes a complex timing controller (TCON) 13 that can be electrically connected to the substrate 11 by wires (for example, a flexible circuit board, not shown in the drawings), and then A trace (not shown) on the surface of the substrate 11 is electrically connected to the corresponding driver 12. In this embodiment, a timing controller 13 can be electrically connected to at least two drivers 12. In other words, the number of timing controllers 13 is less than the number of drivers 12. The timing controller 13 can be directly connected to the corresponding driver 12 by a trace; or can be connected to a driver 12 by a trace, buffered by a signal, and then connected to another driver 12 by a trace.
根據本實施例的又一特徵，微發光二極體顯示面板100採用被動（passive）驅動方式以驅動微發光二極體。第二圖顯示被動驅動方式的微發光二極體顯示面板100的示意圖。時序控制器13傳送時序控制信號與顯示資料信號給驅動器12。驅動器12包含行（column）驅動電路121與列（row或scan）驅動電路122，其中行驅動電路121藉由行導線1211連接並傳送行驅動信號至同一行微發光二極體14的第一電極（例如陽極），列驅動電路122則藉由列導線1221連接並傳送列驅動信號至同一列微發光二極體14的第二電極（例如陰極）。在本實施例中，行驅動電路121與列驅動電路122係製作為單一積體電路。According to still another feature of the embodiment, the micro-light-emitting diode display panel 100 adopts a passive driving manner to drive the micro-light emitting diode. The second figure shows a schematic diagram of the passively driven micro-light emitting diode display panel 100. The timing controller 13 transmits a timing control signal and a display data signal to the driver 12. The driver 12 includes a column driving circuit 121 and a row or scan driving circuit 122. The row driving circuit 121 is connected by the row wiring 1211 and transmits the row driving signal to the first electrode of the same row of the micro-light emitting diodes 14. (e.g., the anode), the column driver circuit 122 connects and transmits the column drive signals to the second electrode (e.g., the cathode) of the same column of micro-light-emitting diodes 14 by the column conductors 1221. In the present embodiment, the row driving circuit 121 and the column driving circuit 122 are fabricated as a single integrated circuit.
根據上述實施例，由於微發光二極體顯示面板100的基板11劃分為複數次區域101，每一次區域101設有相應的驅動器12，因而可以有效降低行驅動電路121與列驅動電路122的負載，以實現單一大尺寸高解析度微發光二極體顯示面板。此外，相對於使用薄膜電晶體（TFT）的主動驅動方式，本實施例之微發光二極體顯示面板100因採用被動驅動方式以驅動微發光二極體14，因此可以簡化顯示面板的製程，縮短微發光二極體14的開啟（turn on）時間，提高驅動電流，有效降低微發光二極體14因漏電流對於灰階顯示所造成的影響。According to the above embodiment, since the substrate 11 of the micro-light-emitting diode display panel 100 is divided into the plurality of sub-regions 101, each of the regions 101 is provided with a corresponding driver 12, so that the load of the row driving circuit 121 and the column driving circuit 122 can be effectively reduced. To achieve a single large-size high-resolution micro-light-emitting diode display panel. In addition, the micro-light-emitting diode display panel 100 of the present embodiment can drive the micro-light-emitting diode 14 by using a passive driving method, so that the process of the display panel can be simplified, as compared with the active driving method using a thin film transistor (TFT). The turn-on time of the micro-light-emitting diode 14 is shortened, the driving current is increased, and the influence of the leakage current on the gray-scale display of the micro-light-emitting diode 14 is effectively reduced.
第三圖顯示本發明第一特定實施例之正面發光（frontside illuminating）的微發光二極體顯示面板300的剖視圖。在本實施例中，微發光二極體14與驅動器12設於基板11的頂面。微發光二極體14所產生的光線主要從基板11的頂面向上發光（亦即正面發光），如箭號所示。The third figure shows a cross-sectional view of a frontside illuminating micro-light emitting diode display panel 300 in accordance with a first particular embodiment of the present invention. In the present embodiment, the micro-light emitting diode 14 and the driver 12 are disposed on the top surface of the substrate 11. The light generated by the micro-light-emitting diode 14 mainly emits light from the top surface of the substrate 11 (i.e., the front side emits light) as indicated by an arrow.
如第三圖所例示，每ㄧ像素包含有紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B。基板11的表面（例如頂面）與微發光二極體14、驅動器12之間設有走線層15，用以電性連接驅動器12、微發光二極體14與時序控制器13。於相鄰像素的微發光二極體14之間，形成光阻斷（light blocking）層16於走線層15的上方。本實施例的光阻斷層16的材質可為黑矩陣（black matrix, BM）或其他可遮蔽光線的適當材質。在一實施例中，同一像素的紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之間也可以形成光阻斷層16，但是不一定要形成。As illustrated in the third figure, each pixel includes a red micro-light emitting diode 14R, a green micro-light emitting diode 14G, and a blue micro-light emitting diode 14B. A wiring layer 15 is disposed between the surface (for example, the top surface) of the substrate 11 and the micro-light-emitting diode 14 and the driver 12 for electrically connecting the driver 12, the micro-light-emitting diode 14 and the timing controller 13. Between the micro-light-emitting diodes 14 of adjacent pixels, a light blocking layer 16 is formed above the wiring layer 15. The material of the light blocking layer 16 of this embodiment may be a black matrix (BM) or other suitable material that can shield light. In an embodiment, the light blocking layer 16 may be formed between the red micro-light emitting diode 14R, the green micro light emitting diode 14G, and the blue micro light emitting diode 14B of the same pixel, but it is not necessarily formed.
紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之上還可設有導光層17。本實施例的正面發光的微發光二極體顯示面板300還包含蓋板18，設於基板11的底面。本實施例之蓋板18的材質可為不透明材質。A light guiding layer 17 may be further disposed on the red micro-light emitting diode 14R, the green micro light emitting diode 14G, and the blue micro light emitting diode 14B. The front-illuminated micro-light-emitting diode display panel 300 of the present embodiment further includes a cover plate 18 disposed on the bottom surface of the substrate 11. The material of the cover plate 18 of this embodiment may be an opaque material.
第四圖顯示本發明第二特定實施例之背面發光（backside illuminating）的微發光二極體顯示面板400的剖視圖。在本實施例中，微發光二極體14與驅動器12設於基板11的頂面。微發光二極體14所產生的光線主要從基板11的背面向下發光（亦即背面發光），如箭號所示。The fourth figure shows a cross-sectional view of a backside illuminating micro-light emitting diode display panel 400 of a second specific embodiment of the present invention. In the present embodiment, the micro-light emitting diode 14 and the driver 12 are disposed on the top surface of the substrate 11. The light generated by the micro-light-emitting diode 14 mainly emits light downward from the back surface of the substrate 11 (i.e., the back surface emits light) as indicated by an arrow.
如第四圖所例示，每ㄧ像素包含有紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B。於相鄰像素的微發光二極體14之間，形成光阻斷層16於基板11的表面（例如頂面）。本實施例的光阻斷層16的材質可為黑矩陣（BM）或其他可遮蔽光線的適當材質。光阻斷層16的上方設有走線層15，用以電性連接驅動器12、微發光二極體14與時序控制器13。在一實施例中，同一像素的紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之間也可以形成光阻斷層16，但是不一定要形成。As illustrated in the fourth figure, each pixel includes a red micro-light emitting diode 14R, a green micro-light emitting diode 14G, and a blue micro-light emitting diode 14B. Between the micro-light-emitting diodes 14 of adjacent pixels, a light blocking layer 16 is formed on the surface (for example, the top surface) of the substrate 11. The material of the light blocking layer 16 of this embodiment may be a black matrix (BM) or other suitable material that can shield light. A wiring layer 15 is disposed above the light blocking layer 16 for electrically connecting the driver 12, the micro LED 14 and the timing controller 13. In an embodiment, the light blocking layer 16 may be formed between the red micro-light emitting diode 14R, the green micro light emitting diode 14G, and the blue micro light emitting diode 14B of the same pixel, but it is not necessarily formed.
紅色微發光二極體14R、綠色微發光二極體14G與藍色微發光二極體14B之上還可設有導光層17。本實施例的背面發光的微發光二極體顯示面板400還包含蓋板18，設於驅動器12、走線層15、光阻斷層16、導光層17的上方。本實施例之蓋板18的材質可為不透明材質。A light guiding layer 17 may be further disposed on the red micro-light emitting diode 14R, the green micro light emitting diode 14G, and the blue micro light emitting diode 14B. The back-illuminated micro-light-emitting diode display panel 400 of the present embodiment further includes a cover plate 18 disposed above the driver 12, the wiring layer 15, the light blocking layer 16, and the light guiding layer 17. The material of the cover plate 18 of this embodiment may be an opaque material.
第五圖例示微發光二極體14的電流-電壓曲線。當操作電壓大於開啟電壓 Vf（例如3伏特），則電流即可大於預設電流值，因而可正常操作微發光二極體14使其點亮。於第一A圖所示的微發光二極體顯示面板100當中，驅動器12的額定系統電源為VDDA。然而，由於傳送電源的金屬線內具有阻抗，使得微發光二極體顯示面板100的中心處會產生一壓降ΔV。因此，微發光二極體顯示面板100的中心處，驅動器12實際上取得的電源值為VDDA-ΔV，至於微發光二極體顯示面板100的邊緣，驅動器12取得的電源值為VDDA。舉例而言，假設壓降ΔV為1伏特，開啟電壓 Vf為3伏特，若要讓驅動器12正常操作，則需符合條件VDDA-1＞3，因此VDDA需大於4伏特（例如使用5伏特）。在此種情形下，驅動器12可使用低壓金屬氧化物半導體（MOS）製程來製造。The fifth graph illustrates the current-voltage curve of the micro-light-emitting diode 14. When the operating voltage is greater than the turn-on voltage Vf (e.g., 3 volts), the current can be greater than the preset current value, so that the micro-light-emitting diode 14 can be normally operated to illuminate. In the micro-light-emitting diode display panel 100 shown in FIG. A, the rated system power of the driver 12 is VDDA. However, due to the impedance in the metal line of the transmission power source, a voltage drop ΔV is generated at the center of the micro-light-emitting diode display panel 100. Therefore, at the center of the micro-light-emitting diode display panel 100, the driver 12 actually obtains a power supply value of VDDA - ΔV. As for the edge of the micro-light-emitting diode display panel 100, the power supply value obtained by the driver 12 is VDDA. For example, assume that the voltage drop ΔV is 1 volt and the turn-on voltage Vf is 3 volts. To allow the driver 12 to operate normally, the condition VDDA-1>3 is required, so VDDA needs to be greater than 4 volts (for example, 5 volts is used). In this case, the driver 12 can be fabricated using a low voltage metal oxide semiconductor (MOS) process.
然而，當微發光二極體14的數目增加使得所需電流變大時，壓降ΔV會更明顯的增加，例如增加為4伏特。若要讓驅動器12正常操作，則需符合條件VDDA-4＞3，因此VDDA需大於7伏特（例如使用8伏特）。在此種情形下，驅動器12就需要使用高壓金屬氧化物半導體（MOS）製程來製造，因而使得電路晶片的面積明顯的增大，不利於大尺寸或高解析度（例如3840RGBx2160）顯示面板的製造。為了解決上述問題，以下提出一種新穎的驅動器12架構。However, when the number of the micro-light-emitting diodes 14 is increased such that the required current becomes large, the voltage drop ΔV is more significantly increased, for example, increased to 4 volts. For the driver 12 to operate normally, the condition VDDA-4>3 is required, so VDDA needs to be greater than 7 volts (for example, 8 volts is used). In this case, the driver 12 needs to be fabricated using a high voltage metal oxide semiconductor (MOS) process, thereby significantly increasing the area of the circuit wafer, which is disadvantageous for the manufacture of large-sized or high-resolution (eg, 3840 RGB x 2160) display panels. . In order to solve the above problems, a novel driver 12 architecture is proposed below.
第六圖顯示本發明實施例之驅動器12的系統方塊圖。在本實施例中，驅動器12包含低壓降（low-dropout或LDO）穩壓器123，其接收系統電源VDDA，據以產生穩壓電源VR（例如5伏特），提供給驅動電路120作為電源。本實施例之低壓降（LDO）穩壓器123可使用傳統低壓降（LDO）穩壓器的電路設計來實施，其細節因此省略。本實施例之驅動電路120可包含行驅動電路121及列驅動電路122。低壓降（LDO）穩壓器123為直流線性穩壓器（DC linear regulator）的一種，可讓穩壓電源VR非常接近系統電源VDDA。相較於切換穩壓器（switching regulator）， 低壓降穩壓器123具有面積小、設計簡單等優點，且不會產生切換雜訊。在本實施例中，穩壓電源VR與地之間可連接穩壓電容器（smoothing capacitor）C，用以濾除高頻雜訊。穩壓電容器C可使用顯示面板製程當中金屬層的製程技術來形成，並不需額外的製程技術。The sixth diagram shows a system block diagram of the driver 12 of the embodiment of the present invention. In the present embodiment, the driver 12 includes a low-dropout (LDO) regulator 123 that receives the system power supply VDDA to generate a regulated power supply VR (e.g., 5 volts) for supply to the drive circuit 120 as a power source. The low dropout (LDO) regulator 123 of this embodiment can be implemented using the circuit design of a conventional low dropout (LDO) regulator, the details of which are therefore omitted. The driving circuit 120 of this embodiment may include a row driving circuit 121 and a column driving circuit 122. The low dropout (LDO) regulator 123 is a DC linear regulator that allows the regulated power supply VR to be very close to the system power supply VDDA. Compared with the switching regulator, the low-dropout regulator 123 has the advantages of small area, simple design, and no switching noise. In this embodiment, a stabilizing capacitor C can be connected between the regulated power supply VR and the ground to filter out high frequency noise. The voltage stabilizing capacitor C can be formed using the process technology of the metal layer in the display panel process without additional process technology.
根據上述本實施例之驅動器12，僅低壓降（LDO）穩壓器123需使用高壓（例如大於8伏特）金屬氧化物半導體（MOS）製程來製造，其餘的驅動電路120則可使用低壓（例如低於8伏特）金屬氧化物半導體（MOS）製程來製造。反觀前述未使用低壓降（LDO）穩壓器123的架構，則是整個驅動器12都需使用高壓金屬氧化物半導體（MOS）製程來製造。所以，本實施例之驅動器12可大幅減少電路面積，有利於大尺寸或高解析度顯示面板的製造。According to the driver 12 of the present embodiment described above, only the low dropout (LDO) regulator 123 is fabricated using a high voltage (e.g., greater than 8 volts) metal oxide semiconductor (MOS) process, and the remaining drive circuit 120 can be operated with a low voltage (e.g., A metal oxide semiconductor (MOS) process is manufactured below 8 volts. In contrast to the aforementioned architecture without the low dropout (LDO) regulator 123, the entire driver 12 is fabricated using a high voltage metal oxide semiconductor (MOS) process. Therefore, the driver 12 of the present embodiment can greatly reduce the circuit area and facilitate the manufacture of a large-sized or high-resolution display panel.
以上所述僅為本發明之較佳實施例而已，並非用以限定本發明之申請專利範圍；凡其它未脫離發明所揭示之精神下所完成之等效改變或修飾，均應包含在下述之申請專利範圍內。The above description is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the invention should be included in the following Within the scope of the patent application.
100‧‧‧微發光二極體顯示面板100‧‧‧Micro LED display panel
101‧‧‧次區域101‧‧‧ subregion
300‧‧‧正面發光的微發光二極體顯示面板300‧‧‧Front-emitting micro-light emitting diode display panel
400‧‧‧背面發光的微發光二極體顯示面板400‧‧‧Backlight-emitting micro-light emitting diode display panel
11‧‧‧基板11‧‧‧Substrate
12‧‧‧驅動器12‧‧‧ Drive
120‧‧‧驅動電路120‧‧‧Drive circuit
121‧‧‧行驅動電路121‧‧‧ row drive circuit
1211‧‧‧行導線1211‧‧‧ wire
122‧‧‧列驅動電路122‧‧‧ column drive circuit
1221‧‧‧列導線1221‧‧‧ column conductor
123‧‧‧低壓降穩壓器123‧‧‧Low Dropout Regulator
13‧‧‧時序控制器13‧‧‧Timing controller
14‧‧‧微發光二極體14‧‧‧microluminescent diode
14R‧‧‧紅色微發光二極體14R‧‧‧Red micro-light emitting diode
14G‧‧‧綠色微發光二極體14G‧‧‧Green micro-light emitting diode
14B‧‧‧藍色微發光二極體14B‧‧‧Blue micro-light emitting diode
15‧‧‧走線層15‧‧‧Line layer
16‧‧‧光阻斷層16‧‧‧Light blocking layer
17‧‧‧導光層17‧‧‧Light guide layer
18‧‧‧蓋板18‧‧‧ cover
VDDA‧‧‧系統電源VDDA‧‧‧ system power supply
VR‧‧‧穩壓電源VR‧‧‧Power supply
C‧‧‧穩壓電容器C‧‧‧Stabilized capacitor
第一A圖顯示本發明實施例之微發光二極體顯示面板的俯視圖。 第一B圖顯示第一A圖之微發光二極體顯示面板的側視圖。 第二圖顯示被動驅動方式的微發光二極體顯示面板的示意圖。 第三圖顯示本發明第一特定實施例之正面發光的微發光二極體顯示面板的剖視圖。 第四圖顯示本發明第二特定實施例之背面發光的微發光二極體顯示面板的剖視圖。 第五圖例示微發光二極體的電流-電壓曲線。 第六圖顯示本發明實施例之驅動器的系統方塊圖。FIG. 1A is a plan view showing a micro-light emitting diode display panel according to an embodiment of the present invention. The first B-picture shows a side view of the micro-light-emitting diode display panel of the first A-picture. The second figure shows a schematic diagram of a passively driven micro-light emitting diode display panel. The third figure shows a cross-sectional view of a front-illuminated micro-light-emitting diode display panel in accordance with a first specific embodiment of the present invention. The fourth figure shows a cross-sectional view of a back-illuminated micro-light emitting diode display panel in accordance with a second specific embodiment of the present invention. The fifth graph illustrates the current-voltage curve of the micro-light emitting diode. Figure 6 is a block diagram showing the system of the drive of the embodiment of the present invention.
Claims (22)
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| US16/128,287 US10529701B2 (en) | 2016-09-26 | 2018-09-11 | MicroLED display panel |
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