TW201814728A - Melanized metal grid structure and manufacture method thereof - Google Patents
Melanized metal grid structure and manufacture method thereof Download PDFInfo
- Publication number
- TW201814728A TW201814728A TW105134555A TW105134555A TW201814728A TW 201814728 A TW201814728 A TW 201814728A TW 105134555 A TW105134555 A TW 105134555A TW 105134555 A TW105134555 A TW 105134555A TW 201814728 A TW201814728 A TW 201814728A
- Authority
- TW
- Taiwan
- Prior art keywords
- blackened
- layers
- metal
- photoresist
- grid structure
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
本發明係為一種黑化金屬網格結構及其製造方法,特別是一種利用黑化層覆蓋金屬層之線路,以控制黑化層之灰階與厚度之黑化金屬網格結構及其製造方法。The invention relates to a blackened metal grid structure and a manufacturing method thereof, in particular to a blackened metal grid structure using a blackened layer to cover a metal layer line to control the gray scale and thickness of the blackened layer and a manufacturing method thereof. .
目前的金屬網格結構, 如中華民國專利公告號第I504697號,揭露一種黑化塗料及使用其之電極結構,其中黑化塗料具有抗腐蝕及降低金屬反光與人眼不可視性的功效,因此以本發明黑化塗料所形成之黑化層可代替傳統的抗蝕層,進而減化觸控面板的電極製程,以達到減少成本並降低金屬電極反光的功效。The current metal grid structure, such as the Republic of China Patent Publication No. I504697, discloses a blackened coating and an electrode structure using the blackened coating. The blackened coating has the effects of anti-corrosion and reducing the reflection of metal and the invisibility of the human eye. The blackened layer formed by the blackened coating of the present invention can replace the traditional resist layer, thereby reducing the electrode manufacturing process of the touch panel, so as to achieve the effect of reducing cost and reflecting light of the metal electrode.
中華民國專利公告號第M491203號,亦揭露一種觸控用電極結構,包含一基材層;至少一附著層,形成一具有線路圖案佈設於基材層表面;一導電電極,形成於附著層表面,並對應線路圖案形成一導電線路;一第一黑化層,形成於導電電極表面,並由易蝕刻性質的材料所製成;及一耐候層,形成於第一黑化層表面,並由耐蝕刻性質的材料所製成;其中,上述耐候層的厚度小於上述第一黑化層,上述第一黑化層使光線被上述第一黑化層吸收而無法進入上述導電電極,形成一能夠避免使用者直接視察到上述導電電極的遮蔽面,據此,本創作可達到避免人眼直接視見觸控面板下之導電電極的存在,以及降低導電電極發生的嚴重側向蝕刻現象,提升導電電極產品之生產良率。The Republic of China Patent Bulletin No. M491203 also discloses a touch electrode structure including a substrate layer; at least one adhesion layer forming a circuit pattern on the surface of the substrate layer; and a conductive electrode formed on the surface of the adhesion layer And a conductive line is formed corresponding to the circuit pattern; a first blackening layer is formed on the surface of the conductive electrode and is made of a material that is easy to etch; and a weathering layer is formed on the surface of the first blackening layer and is formed by Made of a material with resistance to etching; wherein the thickness of the weathering layer is smaller than that of the first blackening layer, and the first blackening layer allows light to be absorbed by the first blackening layer and cannot enter the conductive electrode, forming a Prevent users from directly viewing the shielding surface of the conductive electrodes. Based on this, this creation can avoid the human eye from directly seeing the existence of conductive electrodes under the touch panel, and reduce the serious lateral etching phenomenon of conductive electrodes, and improve the conductivity. Production yield of electrode products.
中華民國專利公告第I509484號,亦揭露一種觸控面板裝置與其電極結構,電極結構可以金屬導電材料製作,為了有效抑制金屬反光,且不影響透光性與金屬導電率,實施例提出的電極結構主要結構有金屬導電層,削光粗化結構以及黑化層,其中電極結構與基板結合,電極結構中設有粗化結構,比如接續形成於金屬導電層之表面上,可用以將金屬反光散射掉,或是用以降低金屬導電層與基板兩者合成的反光,粗化結構的形成可以在金屬導電層上蝕刻或加工形成,或是利用電解、濺鍍、沈積或塗佈方法形成,黑化層係用以吸收射向金屬導電層的光線,以減少螢幕之色偏,並抗金屬反光。The Republic of China Patent Bulletin No. I509484 also discloses a touch panel device and an electrode structure thereof. The electrode structure can be made of a metal conductive material. In order to effectively suppress metal reflection without affecting light transmission and metal conductivity, the electrode structure proposed in the embodiment The main structure includes a metal conductive layer, a roughened and roughened structure, and a blackened layer. The electrode structure is combined with the substrate. The electrode structure is provided with a roughened structure. It can be used to reduce the reflection of both the metal conductive layer and the substrate. The roughened structure can be formed by etching or processing on the metal conductive layer, or it can be formed by electrolytic, sputtering, deposition or coating methods. The coating layer is used to absorb the light directed to the metal conductive layer, so as to reduce the color deviation of the screen and resist metal reflection.
然而,由於上述電極結構只能選擇特定材料,如銅、鐠、鈀、氧化鈀或氧化銅,使得氧化層非亮面金屬,而無法調整黑化層的灰階顏色。However, because the above electrode structure can only select specific materials, such as copper, rhenium, palladium, palladium oxide, or copper oxide, the oxide layer is not a bright metal, and the grayscale color of the blackened layer cannot be adjusted.
因此,如何設計出一可調整黑化層的灰階顏色之黑化金屬網格結構及其製造方法,即成為相關設備廠商以及研發人員所共同期待的目標。Therefore, how to design a blackened metal grid structure capable of adjusting the grayscale color of the blackened layer and the manufacturing method thereof have become the goals that are commonly expected by relevant equipment manufacturers and R & D personnel.
本發明人有鑑於習知技術之無法調整黑化層的灰階顏色之缺失,乃積極著手進行開發,以期可以改進上述既有之缺點,經過不斷地試驗及努力,終於開發出本發明。In view of the inability of the conventional technology to adjust the lack of grayscale color of the blackened layer, the inventor has actively started development in order to improve the existing shortcomings described above. After continuous experiments and efforts, the present invention was finally developed.
本發明之第一目的,係提供一種黑化金屬網格結構。A first object of the present invention is to provide a blackened metal mesh structure.
本發明之第二目的,係提供一種黑化金屬網格結構之製造方法。A second object of the present invention is to provide a method for manufacturing a blackened metal mesh structure.
為了達成上述之目的,本發明之黑化金屬網格結構,係包括一基板、至少一金屬層以及至少二黑化層。To achieve the above object, the blackened metal mesh structure of the present invention includes a substrate, at least one metal layer, and at least two blackened layers.
該基板係包括一第一表面以及一第二表面。該等金屬層係形成於該基板之該第一表面以及該第二表面,或該第一表面以及該第二表面其中之一,該等金屬層具有線路,且該等金屬層係不與其它金屬層之對應位置重疊。The substrate system includes a first surface and a second surface. The metal layers are formed on the first surface and the second surface of the substrate, or one of the first surface and the second surface, the metal layers have wiring, and the metal layers are not related to the other The corresponding positions of the metal layers overlap.
該黑化層之數量係為該金屬層之兩倍,該等黑化層係分別在該第一表面以及該第二表面,直接形成於該等金屬層之上,以及對應該等金屬層之位置,形成於該第一表面或該第二表面之上,該等黑化層係為光阻。The number of the blackening layer is twice that of the metal layer, and the blackening layers are respectively formed on the first surface and the second surface directly on the metal layers, and corresponding to the metal layers. Position, formed on the first surface or the second surface, the blackened layers are photoresist.
為了達成上述之目的,本發明之黑化金屬網格結構之製造方法,係包括步驟: 步驟A:提供一基板,該基板係包括一第一表面以及一第二表面; 步驟B:在該基板之該第一表面以及該第二表面,或該第一表面以及該第二表面其中之一,形成至少一金屬層,該等金屬層具有線路,且該等金屬層係不與其它金屬層之對應位置重疊;以及 步驟C:分別在該第一表面以及該第二表面,直接於該等金屬層之上各形成一黑化層,以及對應該等金屬層之位置,於該第一表面或該第二表面之上形成另一黑化層,該等黑化層係為光阻; 利用該等黑化層覆蓋該等金屬層之線路,可控制該等黑化層之灰階與厚度。In order to achieve the above-mentioned object, the method for manufacturing a blackened metal mesh structure of the present invention includes steps: Step A: providing a substrate, the substrate including a first surface and a second surface; Step B: on the substrate The first surface and the second surface, or one of the first surface and the second surface, forms at least one metal layer, the metal layers have wiring, and the metal layers are not in contact with other metal layers. The corresponding positions overlap; and step C: forming a blackened layer on the first surface and the second surface respectively directly on the metal layers, and the positions corresponding to the metal layers on the first surface or Another blackened layer is formed on the second surface, and the blackened layers are photoresist; the gray scale and thickness of the blackened layers can be controlled by using the blackened layers to cover the lines of the metal layers.
藉由上述之結構及方法,本發明利用該等黑化層覆蓋該等金屬層之線路,可控制該等黑化層之灰階與厚度。With the above-mentioned structure and method, the present invention can control the gray scale and thickness of the blackened layer by using the blackened layer to cover the lines of the metal layer.
為使熟悉該項技藝人士瞭解本發明之目的,兹配合圖式將本發明之較佳實施例詳細說明如下。In order to make those skilled in the art understand the purpose of the present invention, the preferred embodiments of the present invention are described in detail below with reference to the drawings.
請參考圖1以及圖2所示,本發明之黑化金屬網格結構(1),係包括一基板(10)、至少一金屬層(11)、以及至少二黑化層(12)。Please refer to FIG. 1 and FIG. 2. The blackened metal grid structure (1) of the present invention includes a substrate (10), at least one metal layer (11), and at least two blackened layers (12).
該基板(10)係包括一第一表面以及一第二表面。該等金屬層(11)係形成於該基板(10)之該第一表面以及該第二表面,或該第一表面以及該第二表面其中之一,該等金屬層(11)具有線路,且該等金屬層(11)係不與其它金屬層(11)之對應位置重疊。The substrate (10) includes a first surface and a second surface. The metal layers (11) are formed on the first surface and the second surface of the substrate (10), or one of the first surface and the second surface, and the metal layers (11) have wiring. And these metal layers (11) do not overlap with corresponding positions of other metal layers (11).
該黑化層(12)之數量係為該金屬層(11)之兩倍,該等黑化層(12)係分別在該第一表面以及該第二表面,直接形成於該等金屬層(11)之上,以及對應該等金屬層(11)之位置,形成於該第一表面或該第二表面之上,該等黑化層(12)係為光阻。The number of the blackened layer (12) is twice that of the metal layer (11), and the blackened layers (12) are respectively formed on the first surface and the second surface directly on the metal layers ( 11), and the positions corresponding to the metal layers (11) are formed on the first surface or the second surface, and the blackened layers (12) are photoresist.
本發明係利用該等黑化層(12)以二對一的方式,分別從該第一表面以及該第二表面覆蓋該等金屬層(11)之線路,以控制該等黑化層(12)之灰階與厚度。The invention uses the blackening layers (12) to cover the lines of the metal layer (11) from the first surface and the second surface in a two-to-one manner to control the blackening layers (12). ) Gray scale and thickness.
在本發明之一較佳實施例中,其中直接設置於該等金屬層(11)之上的該等黑化層(12),係各自包覆該等金屬層(11)。In a preferred embodiment of the present invention, the blackened layers (12) disposed directly on the metal layers (11) are respectively covered with the metal layers (11).
請參考圖1、圖2以及圖3a至圖3h所示,在本發明之一較佳實施例中,該等金屬層(11)係利用物理氣相沉積鍍膜形成於該基板(10)之該第一表面以及該第二表面,或該第一表面以及該第二表面其中之一。Please refer to FIG. 1, FIG. 2 and FIG. 3a to FIG. 3h. In a preferred embodiment of the present invention, the metal layers (11) are formed on the substrate (10) by physical vapor deposition coating. The first surface and the second surface, or one of the first surface and the second surface.
該等黑化層(12)之形成係藉由於該金屬層(11)進行光阻塗佈、光阻貼附與線路曝光、線路顯影與蝕刻、線路去光阻、在該第一面進行光阻曝光、在該第一面進行光阻顯影、在該第二面進行光阻曝光以及在該第二面進行光阻顯影。The formation of the blackened layers (12) is due to photoresist coating, photoresist attachment and line exposure, line development and etching, line photoresist removal on the first surface due to the metal layer (11). Resist exposure, photoresist development on the first side, photoresist exposure on the second side, and photoresist development on the second side.
其中該等黑化層(12)係為正型光阻或負型光阻。The blackening layer (12) is a positive type photoresist or a negative type photoresist.
請參考圖1、圖2以及圖4a至圖4c所示,在本發明之另一較佳實施例中,該等金屬層(11)係利用物理氣相沉積鍍膜形成於該基板(10)之該第一表面以及該第二表面,或該第一表面以及該第二表面其中之一。Please refer to FIG. 1, FIG. 2 and FIG. 4a to FIG. 4c. In another preferred embodiment of the present invention, the metal layers (11) are formed on the substrate (10) by physical vapor deposition coating. The first surface and the second surface, or one of the first surface and the second surface.
該等黑化層(12)之形成係藉由於該金屬層(11)進行光阻塗佈、光阻貼附與線路曝光、線路顯影與蝕刻。The formation of the blackened layers (12) is due to the photoresist coating, photoresist attachment and line exposure, line development and etching performed by the metal layer (11).
其中該等黑化層(12)係為正型光阻或負型光阻。The blackening layer (12) is a positive type photoresist or a negative type photoresist.
在本發明之一較佳實施例中,該等金屬層(11)之材質係為銅、鋁、鈀、銀、金、鉬或鉬-釹合金其中之一。In a preferred embodiment of the present invention, the material of the metal layers (11) is one of copper, aluminum, palladium, silver, gold, molybdenum, or molybdenum-neodymium alloy.
在本發明之又一較佳實施例中,該等黑化層(12)之光阻色差係小於1.0,該等黑化層(12)之光阻值係小於0.8。In yet another preferred embodiment of the present invention, the photoresist color difference of the blackened layers (12) is less than 1.0, and the photoresist value of the blackened layers (12) is less than 0.8.
在本發明之再一較佳實施例中,該基板(10)之材質係為透明材料,該基板(10)之光穿透度範圍係為85%至100%。In yet another preferred embodiment of the present invention, the material of the substrate (10) is a transparent material, and the light transmittance of the substrate (10) ranges from 85% to 100%.
在本發明之另一較佳實施例中,該等黑化層(12)之光阻光學濃度範圍係為1至10,該等黑化層(12)之光阻線寬範圍1至5微米,該等黑化層(12)之厚度範圍係為0.1至2微米。In another preferred embodiment of the present invention, the optical density range of the photoresist of the blackened layers (12) is 1 to 10, and the photoresistance line width of the blackened layers (12) is 1 to 5 microns. The thickness of the blackened layers (12) ranges from 0.1 to 2 microns.
在本發明之再一較佳實施例中,該等黑化層(12)係包覆該等金屬層(11)之線路,或該等黑化層(12)之光阻線寬大於該等金屬層(11)之線路。In another preferred embodiment of the present invention, the blackened layers (12) are lines covering the metal layers (11), or the photoresistance line width of the blackened layers (12) is greater than The wiring of the metal layer (11).
在本發明之另一較佳實施例中,該基板(10)之材質係為玻璃、聚對苯二甲酸乙二酯、聚萘二甲酸乙二醇酯、聚環烯烴高分子、環烯聚合物或聚亞醯胺其中之一。In another preferred embodiment of the present invention, the material of the substrate (10) is glass, polyethylene terephthalate, polyethylene naphthalate, polycycloolefin polymer, and cycloolefin polymerization. Or polyimide.
請參考圖1、圖2以及圖5所示,本發明之黑化金屬網格結構之製造方法(2),係包括步驟: 步驟200:提供一基板(10),該基板(10)係包括一第一表面以及一第二表面; 步驟201:在該基板(10)之該第一表面以及該第二表面,或該第一表面以及該第二表面其中之一,形成至少一金屬層(11),該等金屬層(11)具有線路,且該等金屬層(11)係不與其它金屬層(11)之對應位置重疊;以及 步驟202:分別在該第一表面以及該第二表面,直接於該等金屬層(11)之上各形成一黑化層(12),以及對應該等金屬層(11)之位置,於該第一表面或該第二表面之上形成另一黑化層(12),該等黑化層(12)係為光阻; 利用該等黑化層(12)覆蓋該等金屬層之線路,可控制該等黑化層(12)之灰階與厚度。Please refer to FIG. 1, FIG. 2 and FIG. 5. The manufacturing method (2) of the blackened metal grid structure of the present invention includes steps: Step 200: Provide a substrate (10), the substrate (10) includes A first surface and a second surface; step 201: forming at least one metal layer on the first surface and the second surface of the substrate (10), or one of the first surface and the second surface ( 11), the metal layers (11) have lines, and the metal layers (11) do not overlap with corresponding positions of other metal layers (11); and step 202: on the first surface and the second surface, respectively Forming a blackened layer (12) directly on each of the metal layers (11), and forming another black on the first surface or the second surface corresponding to the positions of the metal layers (11) The blackening layer (12), the blackening layers (12) are photoresistors; by using the blackening layers (12) to cover the lines of the metal layers, the grayscale and thickness.
在本發明之一較佳實施例中,其中直接設置於該等金屬層(11)之上的該等黑化層(12),係各自包覆該等金屬層(11)。In a preferred embodiment of the present invention, the blackened layers (12) disposed directly on the metal layers (11) are respectively covered with the metal layers (11).
請參考圖1、圖2、圖3a至圖3h以及圖5所示,在本發明之一較佳實施例中之步驟201,該等金屬層(11)係利用物理氣相沉積鍍膜形成於該基板(10)之該第一表面以及該第二表面,或該第一表面以及該第二表面其中之一。Please refer to FIG. 1, FIG. 2, FIG. 3a to FIG. 3h, and FIG. 5. In step 201 in a preferred embodiment of the present invention, the metal layers (11) are formed on the metal layer (11) by a physical vapor deposition coating. One of the first surface and the second surface of the substrate (10), or the first surface and the second surface.
在本發明之另一較佳實施例中之步驟202,該等黑化層(12)之形成係藉由於該金屬層(11)進行光阻塗佈、光阻貼附與線路曝光、線路顯影與蝕刻、線路去光阻、在該第一面進行光阻曝光、在該第一面進行光阻顯影、在該第二面進行光阻曝光以及在該第二面進行光阻顯影。In step 202 in another preferred embodiment of the present invention, the formation of the blackened layers (12) is performed by the metal layer (11) for photoresist coating, photoresist attachment and circuit exposure, and circuit development. And etching, removing the photoresist on the line, performing photoresist exposure on the first surface, photoresist development on the first surface, photoresist exposure on the second surface, and photoresist development on the second surface.
其中該等黑化層(12)係為正型光阻或負型光阻。The blackening layer (12) is a positive type photoresist or a negative type photoresist.
請參考圖1、圖2、圖4a至圖4c以及圖5所示,在本發明之另一較佳實施例中之步驟201,該等金屬層(11)係利用物理氣相沉積鍍膜形成於該基板(10)之該第一表面以及該第二表面,或該第一表面以及該第二表面其中之一。Please refer to FIG. 1, FIG. 2, FIG. 4 a to FIG. 4 c, and FIG. 5. In step 201 in another preferred embodiment of the present invention, the metal layers (11) are formed by using a physical vapor deposition coating. One of the first surface and the second surface of the substrate (10), or the first surface and the second surface.
在本發明之又一較佳實施例中之步驟202,該等黑化層(12)之形成係藉由於該金屬層(11)進行光阻塗佈、光阻貼附與線路曝光、線路顯影與蝕刻。In step 202 in still another preferred embodiment of the present invention, the formation of the blackened layers (12) is performed by the metal layer (11) for photoresist coating, photoresist attachment and circuit exposure, and circuit development. With etching.
其中該等黑化層(12)係為正型光阻或負型光阻。The blackening layer (12) is a positive type photoresist or a negative type photoresist.
在本發明之一較佳實施例中,該等金屬層(11)之材質係為銅、鋁、鈀、銀、金、鉬或鉬-釹合金其中之一。In a preferred embodiment of the present invention, the material of the metal layers (11) is one of copper, aluminum, palladium, silver, gold, molybdenum, or molybdenum-neodymium alloy.
在本發明之又一較佳實施例中,該等黑化層(12)之光阻色差係小於1.0,該等黑化層(12)之光阻值係小於0.8。In yet another preferred embodiment of the present invention, the photoresist color difference of the blackened layers (12) is less than 1.0, and the photoresist value of the blackened layers (12) is less than 0.8.
在本發明之再一較佳實施例中,該基板(10)之材質係為透明材料,該基板(10)之光穿透度範圍係為85%至100%。In yet another preferred embodiment of the present invention, the material of the substrate (10) is a transparent material, and the light transmittance of the substrate (10) ranges from 85% to 100%.
在本發明之另一較佳實施例中,該等黑化層(12)之光阻光學濃度範圍係為1至10,該等黑化層(12)之光阻線寬範圍1至5微米,該等黑化層(12)之厚度範圍係為0.1至2微米。In another preferred embodiment of the present invention, the optical density range of the photoresist of the blackened layers (12) is 1 to 10, and the photoresistance line width of the blackened layers (12) is 1 to 5 microns. The thickness of the blackened layers (12) ranges from 0.1 to 2 microns.
在本發明之一較佳實施例中,該等黑化層(12)之灰階可以選用不同金屬材料進行調整,或以同一黑色系光阻的不同厚度作調整,或選用不同金屬材料來調整,或不同黑色系光阻的同一厚度進行調整。In a preferred embodiment of the present invention, the gray levels of the blackened layers (12) may be adjusted by using different metal materials, or adjusted by different thicknesses of the same black-based photoresist, or adjusted by using different metal materials. , Or the same thickness of different black-based photoresists.
進一步來說,本發明係以該等金屬層(11)做好的線路當作遮罩(mask),先塗覆一層黑化層(12),進行光照顯影蝕刻後,再塗覆一層黑化層(12),再進行光照顯影蝕刻,使任何一條線路上下都會有該等黑化層(12)。Further, in the present invention, a circuit made of the metal layers (11) is used as a mask, and a blackening layer (12) is firstly coated, and then subjected to light development and etching, and then a blackening layer is applied. Layer (12), and then subjected to light development and etching, so that there is such a blackened layer (12) above and below any line.
在本發明之再一較佳實施例中,該等黑化層(12)係包覆該等金屬層(11)之線路,或該等黑化層(12)之光阻線寬大於該等金屬層(11)之線路。In another preferred embodiment of the present invention, the blackened layers (12) are lines covering the metal layers (11), or the photoresistance line width of the blackened layers (12) is greater than The wiring of the metal layer (11).
在本發明之另一較佳實施例中,該基板(10)之材質係為玻璃、聚對苯二甲酸乙二酯、聚萘二甲酸乙二醇酯、聚環烯烴高分子、環烯聚合物或聚亞醯胺其中之一。In another preferred embodiment of the present invention, the material of the substrate (10) is glass, polyethylene terephthalate, polyethylene naphthalate, polycycloolefin polymer, and cycloolefin polymerization. Or polyimide.
透過上述之結構,本發明利用該等黑化層覆蓋該等金屬層之線路,不但可藉由光阻貼附與線路曝光與線路顯影與蝕刻,控制該等黑化層之灰階與厚度,更由於金屬層之材質可使用任何金屬材質,而可調整黑化層之灰階顏色。再者,其結構型態並非所屬技術領域中之人士所能輕易思及而達成者,實具有新穎性以及進步性無疑。Through the above-mentioned structure, the present invention uses the blackened layers to cover the lines of the metal layers, and not only can the gray scale and thickness of the blackened layers be controlled by photoresistance attachment, line exposure, and line development and etching. Furthermore, since the metal layer can be made of any metal material, the grayscale color of the blackened layer can be adjusted. Furthermore, its structural form is not something that can be easily reached by those in the technical field to which it belongs, and it is undoubtedly novel and progressive.
透過上述之詳細說明,即可充分顯示本發明之目的及功效上均具有實施之進步性,極具產業之利用性價值,且為目前市面上前所未見之新發明,完全符合發明專利要件,爰依法提出申請。唯以上所述著僅為本發明之較佳實施例而已,當不能用以限定本發明所實施之範圍。即凡依本發明專利範圍所作之均等變化與修飾,皆應屬於本發明專利涵蓋之範圍內,謹請 貴審查委員明鑑,並祈惠准,是所至禱。Through the above detailed description, it can fully show that the purpose and efficacy of the present invention are progressive in implementation, have great industrial utility value, and are new inventions that have never been seen on the market today, and fully meet the requirements of invention patents , Apply according to law. The above descriptions are merely preferred embodiments of the present invention, and should not be used to limit the scope of implementation of the present invention. That is to say, all equal changes and modifications made according to the scope of the patent of the present invention should fall within the scope of the patent of the present invention. I ask your reviewing committee to make a clear reference and pray for your approval.
(1)‧‧‧黑化金屬網格結構(1) ‧‧‧Blackened metal grid structure
(10)‧‧‧基板(10) ‧‧‧Substrate
(11)‧‧‧金屬層(11) ‧‧‧Metal layer
(12)‧‧‧黑化層(12) ‧‧‧Blackened layer
(2)‧‧‧黑化金屬網格結構之製造方法(2) ‧‧‧Manufacturing method of blackened metal grid structure
步驟200~步驟202Step 200 ~ Step 202
圖1係本發明之黑化金屬網格結構之第一實施例之示意圖; 圖2係本發明之黑化金屬網格結構之第二實施例之示意圖; 圖3a係本發明利用物理氣相沉積鍍膜形成該等金屬層之示意圖; 圖3b係本發明光阻塗佈、光阻貼附與線路曝光之示意圖; 圖3c係本發明線路顯影與蝕刻之示意圖; 圖3d係本發明線路去光阻之示意圖; 圖3e係本發明在該第一面進行光阻曝光之示意圖; 圖3f係本發明在該第一面進行光阻顯影之示意圖; 圖3g係本發明在該第二面進行光阻曝光之示意圖; 圖3h係本發明在該第二面進行光阻顯影之示意圖; 圖4a係本發明利用物理氣相沉積鍍膜形成該等金屬層之示意圖; 圖4b係本發明光阻塗佈、光阻貼附與線路曝光之示意圖; 圖4c係本發明線路顯影與蝕刻之示意圖;以及 圖5係本發明之黑化金屬網格結構之製造方法的方法流程圖。Fig. 1 is a schematic diagram of a first embodiment of a blackened metal grid structure of the present invention; Fig. 2 is a schematic diagram of a second embodiment of a blackened metal grid structure of the present invention; Fig. 3a is a physical vapor deposition method of the present invention. Schematic diagram of the metal layers formed by coating; Figure 3b is a schematic diagram of the photoresist coating, photoresistance attachment and circuit exposure of the present invention; Figure 3c is a schematic diagram of the development and etching of the circuit of the present invention; Figure 3d is a photoresist removal of the circuit of the present invention Fig. 3e is a schematic diagram of the present invention performing photoresist exposure on the first side; Fig. 3f is a schematic diagram of the present invention performing photoresist development on the first side; Fig. 3g is an embodiment of the present invention performing photoresist on the second side Schematic diagram of exposure; Figure 3h is a schematic diagram of photoresist development on the second side of the present invention; Figure 4a is a schematic diagram of the present invention using physical vapor deposition to form these metal layers; Figure 4b is a photoresist coating of the present invention, Schematic diagram of photoresistor attachment and circuit exposure; Figure 4c is a schematic diagram of the development and etching of a circuit of the present invention; and Figure 5 is a method flowchart of a method for manufacturing a blackened metal grid structure of the present invention.
Claims (10)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??201610871136.9 | 2016-09-30 | ||
| CN201610871136.9A CN106648201B (en) | 2016-09-30 | 2016-09-30 | Melanism metal mesh structure and its manufacturing method |
| CN201610871136.9 | 2016-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201814728A true TW201814728A (en) | 2018-04-16 |
| TWI690949B TWI690949B (en) | 2020-04-11 |
Family
ID=58854025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105134555A TWI690949B (en) | 2016-09-30 | 2016-10-26 | Blackened metal grid structure and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106648201B (en) |
| TW (1) | TWI690949B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108471677B (en) * | 2018-03-01 | 2020-09-08 | 云谷(固安)科技有限公司 | Manufacturing method of touch screen, touch screen and electronic equipment |
| CN108846318B (en) * | 2018-05-24 | 2021-08-31 | 业泓科技(成都)有限公司 | Ultrasonic fingerprint identification device, method of making the same, and electronic device using the same |
| CN109375815A (en) * | 2018-11-16 | 2019-02-22 | 信利光电股份有限公司 | A kind of the melanism method and metal grill touch screen of metal grill touch screen |
| CN109696990A (en) * | 2018-11-16 | 2019-04-30 | 信利光电股份有限公司 | A kind of the melanism method and metal grill touch screen of metal grill touch screen |
| CN109634464B (en) * | 2018-12-21 | 2022-03-29 | 信利光电股份有限公司 | Touch sensor and touch display panel |
| CN111352533A (en) * | 2020-02-28 | 2020-06-30 | 厦门理工学院 | A kind of anti-shadow touch structure, production method and touch screen |
| CN112735634B (en) * | 2021-01-11 | 2023-03-14 | 江苏软讯科技有限公司 | Conductive film with metal grid and production process thereof |
| CN115627466B (en) * | 2022-10-25 | 2025-06-03 | 浙江鑫柔科技有限公司 | A method for preparing a touch sensor for reducing metal grid visibility and a touch sensor prepared by the same |
| CN117197129B (en) * | 2023-11-03 | 2024-02-13 | 浙江鑫柔科技有限公司 | Blackening degree detection method and device and computer equipment |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120138287A (en) * | 2011-06-14 | 2012-12-26 | 삼성전기주식회사 | Touch panel and method of manufacturing the same |
| JP6099875B2 (en) * | 2011-11-22 | 2017-03-22 | 東レ株式会社 | Manufacturing method of laminate |
| EP2747093B1 (en) * | 2012-04-18 | 2017-03-08 | LG Chem, Ltd. | Conductive structure and method for manufacturing same |
| JP2014179063A (en) * | 2013-02-13 | 2014-09-25 | Panasonic Corp | Touch panel |
| TWI504697B (en) * | 2013-10-07 | 2015-10-21 | J Touch Corp | Blackening coating and electrode structure using the same |
| EP2937766B1 (en) * | 2013-11-04 | 2018-07-25 | LG Chem, Ltd. | Conductive structure and preparation method therefor |
| TWI509484B (en) * | 2013-12-13 | 2015-11-21 | J Touch Corp | Touch-sensitive panel device and electrode structure therein |
| TWM491203U (en) * | 2014-07-09 | 2014-12-01 | Kingdom Co Ltd T | Touch electrode structure |
| TWM499597U (en) * | 2014-10-28 | 2015-04-21 | Emerging Display Tech Corp | Borderless touch panel |
| TWI540479B (en) * | 2014-11-21 | 2016-07-01 | 群創光電股份有限公司 | Touch display device and manufacturing method thereof |
| CN105335034B (en) * | 2015-12-08 | 2019-03-12 | 赵宗轩 | Two-sided capacitance plate functional sheet of metal grill monofilm and preparation method thereof |
-
2016
- 2016-09-30 CN CN201610871136.9A patent/CN106648201B/en not_active Expired - Fee Related
- 2016-10-26 TW TW105134555A patent/TWI690949B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106648201B (en) | 2019-07-19 |
| CN106648201A (en) | 2017-05-10 |
| TWI690949B (en) | 2020-04-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201814728A (en) | Melanized metal grid structure and manufacture method thereof | |
| US10353497B2 (en) | Substrate with conductive layers, substrate with touch-panel transparent electrodes, and method for fabricating same | |
| US20160062518A1 (en) | Touch substrate and fabricating method thereof, and touch display apparatus | |
| US10197817B2 (en) | Substrate and manufacturing method thereof, and display device | |
| US10698539B2 (en) | UV film sensor and preparation method therefor, and touch control screen | |
| WO2017097204A1 (en) | Metal mesh single-film dual sided capacitive screen sensor and manufacturing method thereof | |
| CN105093629A (en) | Display panel and making method and display device thereof | |
| CN107464776A (en) | A kind of display panel, its preparation method and display device | |
| CN202473925U (en) | Top gate type TFT (Thin Film Transistor) array substrate and display device | |
| US9645688B2 (en) | OGS touch screen substrate and method of manufacturing the same, and related apparatus | |
| KR101384110B1 (en) | Method of preparing pad for touch panel and pad for touch panel prepared thereby | |
| CN106684100A (en) | Array substrate, manufacturing method thereof and display device | |
| CN111524907A (en) | Display panel, preparation method thereof and display device | |
| US20180164932A1 (en) | Conductive structure, method for manufacturing same, touch panel comprising same and display device comprising same | |
| CN105161455A (en) | FFS array substrate manufacturing method thereof, and display device | |
| WO2017012292A1 (en) | Array substrate, preparation method thereof, display panel and display device | |
| US9620729B2 (en) | Organic thin film transistor and method of manufacturing the same, array substrate and display device | |
| CN105470268A (en) | Array substrate, fabrication method thereof and display device | |
| WO2016161858A1 (en) | Touch substrate and manufacturing method thereof, and touch display panel | |
| CN205318357U (en) | Integration touch screen structure | |
| CN111146363A (en) | A display device and method of making the same | |
| CN205176821U (en) | OGS capacitive touch screen and touch -sensitive display device | |
| JP2016040667A (en) | Multilayer thin film | |
| CN112786673B (en) | AMOLED display screen and manufacturing method thereof | |
| US20240250095A1 (en) | Array substrates and methods for manufacturing the same, display panels and display devices |