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TW201807203A - Conductive material and connected structure - Google Patents

Conductive material and connected structure Download PDF

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Publication number
TW201807203A
TW201807203A TW106112143A TW106112143A TW201807203A TW 201807203 A TW201807203 A TW 201807203A TW 106112143 A TW106112143 A TW 106112143A TW 106112143 A TW106112143 A TW 106112143A TW 201807203 A TW201807203 A TW 201807203A
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TW
Taiwan
Prior art keywords
conductive
solder
particles
electrode
connection
Prior art date
Application number
TW106112143A
Other languages
Chinese (zh)
Inventor
久保田敬士
西岡敬三
Original Assignee
積水化學工業股份有限公司
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Publication of TW201807203A publication Critical patent/TW201807203A/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/14Structural association of two or more printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C13/00Alloys based on tin
    • H10W72/012
    • H10W74/15

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Wire Bonding (AREA)
  • Laminated Bodies (AREA)

Abstract

本發明提供一種導電材料,其可將焊料有效率地配置於欲連接之電極間,而可提高導通可靠性及絕緣可靠性。 本發明之導電材料包含於導電部之外表面部分具有焊料之複數個第1導電性粒子、於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑之第2導電性粒子、熱硬化性化合物、及熱硬化劑。The invention provides a conductive material, which can efficiently dispose solder between electrodes to be connected, and can improve the conduction reliability and insulation reliability. The conductive material of the present invention includes a plurality of first conductive particles having solder on the outer surface portion of the conductive portion, second conductive particles having silver, ruthenium, iridium, gold, palladium or platinum on the outer surface portion of the conductive portion, Thermosetting compounds and thermosetting agents.

Description

導電材料及連接結構體Conductive material and connection structure

本發明係關於一種包含具有焊料之導電性粒子之導電材料。又,本發明係關於一種使用上述導電材料之連接結構體。The present invention relates to a conductive material containing conductive particles having solder. The present invention also relates to a connection structure using the conductive material.

各向異性導電膏及各向異性導電膜等各向異性導電材料廣為人知。上述各向異性導電材料中,導電性粒子分散於黏合劑中。上述各向異性導電材料中之焊料粒子之含量例如為80重量%以下。 上述各向異性導電材料例如被用於軟性印刷基板與玻璃基板之連接(FOG(Film on Glass,玻璃覆膜))、半導體晶片與軟性印刷基板之連接(COF(Chip on Film,薄膜覆晶))、半導體晶片與玻璃基板之連接(COG(Chip on Glass,玻璃覆晶))、以及軟性印刷基板與玻璃環氧基板之連接(FOB(Film on Board,基板覆膜))等以獲得各種連接結構體。 於利用上述各向異性導電材料將例如軟性印刷基板之電極與玻璃環氧基板之電極電性連接時,將包含導電性粒子之各向異性導電材料配置於玻璃環氧基板上。繼而,積層軟性印刷基板,進行加熱及加壓。藉此,使各向異性導電材料硬化而經由導電性粒子將電極間電性連接,獲得連接結構體。 作為上述各向異性導電材料之一例,下述專利文獻1中記載有一種各向異性導電材料,其包含導電性粒子、及於該導電性粒子之熔點下硬化未完全結束之樹脂成分。作為上述導電性粒子,具體而言可列舉錫(Sn)、銦(In)、鉍(Bi)、銀(Ag)、銅(Cu)、鋅(Zn)、鉛(Pb)、鎘(Cd)、鎵(Ga)及鉈(Tl)等金屬、或該等金屬之合金。 專利文獻1中記載有歷經將各向異性導電材料加熱至高於上述導電性粒子之熔點且上述樹脂成分之硬化未完全結束之溫度的樹脂加熱步驟、及使上述樹脂成分硬化之樹脂成分硬化步驟而將電極間電性連接。又,專利文獻1中記載有以專利文獻1之圖8中所示之溫度分佈進行安裝。專利文獻1中,導電性粒子於在各向異性導電材料之加熱溫度下硬化未完全結束之樹脂成分內熔融。 下述專利文獻2中揭示有一種混合有焊料粉末及助焊劑之焊膏。上述助焊劑包含1質量%以上且2質量%以下之聚甲基丙烯酸烷基酯。上述助焊劑包含5質量%以上且未達15質量%之十八醯胺。上述焊膏之黏度為50 Pa・s以上且150 Pa・s以下。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2004-260131號公報 [專利文獻2]日本專利特開2013-132654號公報Anisotropic conductive materials such as anisotropic conductive pastes and anisotropic conductive films are widely known. In the anisotropic conductive material, conductive particles are dispersed in a binder. The content of the solder particles in the anisotropic conductive material is, for example, 80% by weight or less. The above-mentioned anisotropic conductive material is used, for example, for connection between a flexible printed substrate and a glass substrate (FOG (Film on Glass, glass film)), connection between a semiconductor wafer and a flexible printed substrate (COF (Chip on Film, film on film)) ), The connection of semiconductor wafers and glass substrates (COG (Chip on Glass)), and the connection of flexible printed substrates and glass epoxy substrates (FOB (Film on Board, substrate coating)), etc. to obtain various connections Structure. When using an anisotropic conductive material to electrically connect, for example, an electrode of a flexible printed circuit board and an electrode of a glass epoxy substrate, the anisotropic conductive material including conductive particles is disposed on the glass epoxy substrate. Then, the flexible printed circuit board is laminated, and heated and pressed. Thereby, the anisotropic conductive material is hardened, and the electrodes are electrically connected via the conductive particles to obtain a connection structure. As an example of the anisotropic conductive material described below, Patent Document 1 below describes an anisotropic conductive material including conductive particles and a resin component whose curing is not completely completed at the melting point of the conductive particles. Specific examples of the conductive particles include tin (Sn), indium (In), bismuth (Bi), silver (Ag), copper (Cu), zinc (Zn), lead (Pb), and cadmium (Cd). , Gallium (Ga) and thorium (Tl) and other metals, or alloys of these metals. Patent Document 1 describes a resin heating step of heating the anisotropic conductive material to a temperature higher than the melting point of the conductive particles and the curing of the resin component is not completely completed, and a resin component curing step of curing the resin component. Electrically connect the electrodes. In addition, Patent Document 1 describes mounting with a temperature distribution shown in FIG. 8 of Patent Document 1. In Patent Document 1, the conductive particles are melted in a resin component whose curing is not completely completed at the heating temperature of the anisotropic conductive material. The following patent document 2 discloses a solder paste in which a solder powder and a flux are mixed. The said flux contains polyalkyl methacrylate at 1 mass% or more and 2 mass% or less. The above-mentioned flux contains octadecylamine in an amount of 5% by mass or more and less than 15% by mass. The viscosity of the solder paste is 50 Pa · s or more and 150 Pa · s or less. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2004-260131 [Patent Literature 2] Japanese Patent Laid-Open No. 2013-132654

[發明所欲解決之問題] 先前之各向異性導電材料存在無法有效率地配置於欲連接之上下電極間之情形。先前之各向異性導電材料存在如下問題:於硬化時,焊料向電極上移動之速度較慢,焊料於充分地移動至電極上之前黏度上升,焊料容易殘留於無電極之區域。 本發明之目的在於提供一種導電材料,其可將焊料有效率地配置於欲連接之電極間,而可提高導通可靠性及絕緣可靠性。又,本發明之目的在於提供一種使用上述導電材料之連接結構體。 [解決問題之技術手段] 根據本發明之較廣之態樣,提供一種導電材料,其包含:於導電部之外表面部分具有焊料之複數個第1導電性粒子、於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑之第2導電性粒子、熱硬化性化合物、及熱硬化劑。 於本發明之導電材料之某一特定之態樣中,上述第2導電性粒子於導電部之外表面部分具有金、鈀或鉑。 於本發明之導電材料之某一特定之態樣中,上述第1導電性粒子中之焊料之熔點下之導電材料之黏度為2 Pa・s以上且10 Pa・s以下。 於本發明之導電材料之某一特定之態樣中,上述第2導電性粒子之平均粒徑小於上述第1導電性粒子之平均粒徑。 於本發明之導電材料之某一特定之態樣中,上述第2導電性粒子之含量為10重量%以下。 於本發明之導電材料之某一特定之態樣中,上述第1導電性粒子之含量相對於上述第2導電性粒子之含量的比以重量基準計為3以上且80以下。 於本發明之導電材料之某一特定之態樣中,上述熱硬化性化合物包含於25℃下為液狀之熱硬化性化合物。 於本發明之導電材料之某一特定之態樣中,上述熱硬化性化合物包含具有聚醚骨架之熱硬化性化合物。 於本發明之導電材料之某一特定之態樣中,包含熔點為50℃以上且190℃以下之助焊劑。 於本發明之導電材料之某一特定之態樣中,於上述第1導電性粒子之外表面存在羧基或胺基。 於本發明之導電材料之某一特定之態樣中,上述第1導電性粒子係於中心部分及外表面部分具有焊料之焊料粒子。 於本發明之導電材料之某一特定之態樣中,包含未附著於上述第1導電性粒子之表面及上述第2導電性粒子之表面之任一者的絕緣性粒子。 根據本發明之較廣之態樣,提供一種連接結構體,其具備:於表面具有至少1個第1電極之第1連接對象構件、於表面具有至少1個第2電極之第2連接對象構件、及將上述第1連接對象構件與上述第2連接對象構件連接之連接部,上述連接部之材料係上述之導電材料,上述連接部具有硬化物部、焊料部、及上述第2導電性粒子,上述焊料部內配置有上述第2導電性粒子,上述第1電極與上述第2電極藉由上述連接部中之焊料部而電性連接。 根據本發明之較廣之態樣,提供一種連接結構體,其具備:於表面具有至少1個第1電極之第1連接對象構件、於表面具有至少1個第2電極之第2連接對象構件、及將上述第1連接對象構件與上述第2連接對象構件連接之連接部,上述連接部具有硬化物部、焊料部、及於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑之第2導電性粒子,上述焊料部內配置有上述第2導電性粒子,上述第1電極與上述第2電極藉由上述連接部中之焊料部而電性連接。 於本發明之連接結構體之某一特定之態樣中,上述第2導電性粒子於導電部之外表面部分具有金、鈀或鉑。 於本發明之連接結構體之某一特定之態樣中,於沿上述第1電極、上述連接部、及上述第2電極之積層方向觀察上述第1電極與上述第2電極相對向之部分時,於上述第1電極與上述第2電極相對向之部分之面積100%中之50%以上配置有上述連接部中之焊料部。 [發明之效果] 本發明之導電材料由於包含於導電部之外表面部分具有焊料之複數個第1導電性粒子、於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑之第2導電性粒子、熱硬化性化合物、及熱硬化劑,故而可將焊料有效率地配置於欲連接之電極間,而可提高導通可靠性及絕緣可靠性。 本發明之連接結構體由於具備於表面具有至少1個第1電極之第1連接對象構件、於表面具有至少1個第2電極之第2連接對象構件、及將上述第1連接對象構件與上述第2連接對象構件連接之連接部,上述連接部具有硬化物部、焊料部、及於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑之第2導電性粒子,上述焊料部內配置有上述第2導電性粒子,上述第1電極與上述第2電極藉由上述連接部中之焊料部而電性連接,故而可提高導通可靠性及絕緣可靠性。[Problems to be Solved by the Invention] The conventional anisotropic conductive materials may not be efficiently disposed between the upper and lower electrodes to be connected. The prior anisotropic conductive materials have the following problems: during hardening, the solder moves to the electrode at a slower speed, the viscosity of the solder increases before the solder is sufficiently moved to the electrode, and the solder tends to remain in the electrodeless area. An object of the present invention is to provide a conductive material, which can efficiently dispose solder between electrodes to be connected, and can improve conduction reliability and insulation reliability. It is another object of the present invention to provide a connection structure using the conductive material. [Technical means to solve the problem] According to a broad aspect of the present invention, a conductive material is provided, which includes a plurality of first conductive particles having solder on a surface portion of a conductive portion, and a surface portion of the conductive portion. It has second conductive particles of silver, ruthenium, iridium, gold, palladium, or platinum, a thermosetting compound, and a thermosetting agent. In a specific aspect of the conductive material of the present invention, the second conductive particle has gold, palladium, or platinum on an outer surface portion of the conductive portion. In a specific aspect of the conductive material of the present invention, the viscosity of the conductive material at the melting point of the solder in the first conductive particles is 2 Pa · s or more and 10 Pa · s or less. In a specific aspect of the conductive material of the present invention, the average particle diameter of the second conductive particles is smaller than the average particle diameter of the first conductive particles. In a specific aspect of the conductive material of the present invention, the content of the second conductive particles is 10% by weight or less. In a specific aspect of the conductive material of the present invention, the ratio of the content of the first conductive particles to the content of the second conductive particles is 3 or more and 80 or less on a weight basis. In a specific aspect of the conductive material of the present invention, the thermosetting compound includes a thermosetting compound that is liquid at 25 ° C. In a specific aspect of the conductive material of the present invention, the thermosetting compound includes a thermosetting compound having a polyether skeleton. In a specific aspect of the conductive material of the present invention, a flux having a melting point of 50 ° C. or higher and 190 ° C. or lower is included. In a specific aspect of the conductive material of the present invention, a carboxyl group or an amine group exists on the outer surface of the first conductive particle. In a specific aspect of the conductive material of the present invention, the first conductive particles are solder particles having solder in a central portion and an outer surface portion. A specific aspect of the conductive material of the present invention includes insulating particles that are not adhered to any of the surface of the first conductive particles and the surface of the second conductive particles. According to a broad aspect of the present invention, there is provided a connection structure including: a first connection target member having at least one first electrode on a surface; and a second connection target member having at least one second electrode on a surface. And a connection portion that connects the first connection target member and the second connection target member, the material of the connection portion is the conductive material described above, and the connection portion includes a hardened portion, a solder portion, and the second conductive particle The second conductive particles are arranged in the solder portion, and the first electrode and the second electrode are electrically connected through the solder portion of the connection portion. According to a broad aspect of the present invention, there is provided a connection structure including: a first connection target member having at least one first electrode on a surface; and a second connection target member having at least one second electrode on a surface. And a connection portion that connects the first connection target member and the second connection target member, the connection portion includes a hardened portion, a solder portion, and silver, ruthenium, iridium, gold, and palladium on the outer surface portion of the conductive portion Or platinum second conductive particles, the second conductive particles are arranged in the solder portion, and the first electrode and the second electrode are electrically connected through the solder portion of the connection portion. In a specific aspect of the connection structure of the present invention, the second conductive particle has gold, palladium, or platinum on an outer surface portion of the conductive portion. In a specific aspect of the connection structure of the present invention, when a portion of the first electrode facing the second electrode is viewed in a lamination direction of the first electrode, the connection portion, and the second electrode The solder portion of the connection portion is disposed at 50% or more of an area of 100% of a portion of the first electrode facing the second electrode. [Effects of the Invention] The conductive material of the present invention includes a plurality of first conductive particles having solder on the surface portion of the conductive portion, and silver, ruthenium, iridium, gold, palladium, or platinum on the surface portion of the conductive portion. Since the second conductive particles, the thermosetting compound, and the thermosetting agent, the solder can be efficiently disposed between the electrodes to be connected, and the conduction reliability and the insulation reliability can be improved. The connection structure of the present invention includes a first connection target member having at least one first electrode on the surface, a second connection target member having at least one second electrode on the surface, and the first connection target member and the above. A connection portion to which a second connection target member is connected, the connection portion having a hardened portion, a solder portion, and second conductive particles having silver, ruthenium, iridium, gold, palladium, or platinum on an outer surface portion of the conductive portion, the solder The second conductive particles are arranged in the portion, and the first electrode and the second electrode are electrically connected by the solder portion in the connection portion, so that the conduction reliability and the insulation reliability can be improved.

以下,對本發明之詳細內容進行說明。 (導電材料) 本發明之導電材料包含第1導電性粒子、第2導電性粒子、熱硬化性化合物、及熱硬化劑。 上述第1導電性粒子具有導電部。上述第1導電性粒子於導電部之外表面部分具有焊料。焊料包含於導電部,為導電部之一部分或全部。 上述第2導電性粒子具有導電部。上述第2導電性粒子於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑。銀、釕、銥、金、鈀或鉑包含於導電部,為導電部之一部分或全部。 於本發明中,由於具備上述構成,故而焊料向電極上移動之速度變快,可將焊料有效率地配置於欲連接之電極間,而可提高導通可靠性及絕緣可靠性。於電極寬度或電極間寬度較窄之情形時,有難以使焊料集聚於電極上之傾向,但於本發明中,即便電極寬度或電極間寬度較窄,亦可使焊料充分地集聚於電極上。於本發明中,由於具備上述構成,故而於將電極間電性連接之情形時,焊料容易聚集於上下對向之電極間,可將焊料有效率地配置於電極(線)上。又,於本發明中,若電極之某一電極寬度較廣,則焊料更有效率地配置於電極上。 表現出上述效果之原因在於:於導電連接時,藉由於複數個第1導電性粒子之間存在第2導電性粒子,而第1導電性粒子經由第2導電性粒子被吸引向其他第1導電性粒子。第2導電性粒子由於在導電部之外表面部分具有銀、釕、銥、金、鈀或鉑,故而具有吸引焊料之作用。 又,於本發明中,焊料之一部分難以配置於未形成電極之區域(間隔),可大幅減少配置於未形成電極之區域之焊料之量。於本發明中,可使不位於對向之電極間之焊料有效率地移動至對向之電極間。因此,可提高電極間之導通可靠性。並且,可防止不可連接之於橫方向上相鄰之電極間之電性連接,可提高絕緣可靠性。 進而,於本發明中,可防止電極間之位置偏移。於本發明中,於將第2連接對象構件重疊於上表面配置有導電材料之第1連接對象構件上時,即便於在第1連接對象構件之電極與第2連接對象構件之電極之對準偏移之狀態下使第1連接對象構件與第2連接對象構件重疊之情形時,亦可修正其偏移而使第1連接對象構件之電極與第2連接對象構件之電極連接(自對準效果)。 為了更有效率地將焊料配置於電極上,上述導電材料較佳為於25℃下為液狀,較佳為導電膏。為了更有效率地將焊料配置於電極上,上述導電材料之25℃下之黏度(η25)較佳為10 Pa・s以上,更佳為50 Pa・s以上,進而較佳為100 Pa・s以上,且較佳為800 Pa・s以下,更佳為600 Pa・s以下,進而較佳為500 Pa・s以下。上述黏度(η25)可藉由調配成分之種類及調配量而適當地調整。 上述黏度(η25)例如可使用E型黏度計(東機產業公司製造之「TVE22L」)等於25℃及5 rpm之條件下進行測定。 為了更有效率地將焊料配置於電極上,上述第1導電性粒子中之焊料之熔點下之導電材料之黏度(ηmp)較佳為2 Pa・s以上,更佳為3 Pa・s以上,進而較佳為4 Pa・s以上,且較佳為10 Pa・s以下,更佳為9 Pa・s以下,進而較佳為8 Pa・s以下。上述黏度(ηmp)可藉由調配成分之種類及調配量而適當地調整。 焊料之熔點係容易影響第1導電性粒子向電極上之移動之溫度。 上述黏度(ηmp)例如可使用STRESSTECH(EOLOGICA公司製造)等於應變控制1 rad、頻率1 Hz、升溫速度20℃/分鐘、測定溫度範圍40℃~焊料之熔點℃之條件下進行測定。於該測定中,讀取焊料之熔點下之黏度。 上述導電材料可用作導電膏及導電膜等。上述導電膜較佳為各向異性導電膜。就更有效率地將焊料配置於電極上之觀點而言,上述導電材料較佳為導電膏。上述導電材料可較佳地用於電極之電性連接。上述導電材料較佳為電路連接材料。 以下,對上述導電材料中所包含之各成分進行說明。再者,於本說明書中,「(甲基)丙烯酸」意指「丙烯酸」與「甲基丙烯酸」之一者或兩者,「(甲基)丙烯酸酯」意指「丙烯酸酯」與「甲基丙烯酸酯」之一者或兩者,「(甲基)丙烯醯基」意指「丙烯醯基」與「甲基丙烯醯基」之一者或兩者。 (第1導電性粒子) 上述第1導電性粒子係將連接對象構件之電極間電性連接。上述第1導電性粒子於導電部之外表面部分具有焊料。上述第1導電性粒子亦可為由焊料所形成之焊料粒子。上述焊料粒子於導電部之外表面部分具有焊料。上述焊料粒子之中心部分及導電部之外表面部分均由焊料所形成。上述焊料粒子係中心部分及導電部之外表面均為焊料之粒子。上述焊料粒子不具有基材粒子作為核粒子。上述焊料粒子不同於具備基材粒子、及配置於上述基材粒子之表面上之導電部的導電性粒子。上述焊料粒子例如包含較佳為80重量%以上、更佳為90重量%以上、進而較佳為95重量%以上之焊料。上述第1導電性粒子亦可具有基材粒子、及配置於該基材粒子之表面上之導電部。於該情形時,上述第1導電性粒子於導電部之外表面部分具有焊料。 再者,與使用上述焊料粒子之情形相比,於使用具備不由焊料所形成之基材粒子、及配置於基材粒子之表面上之焊料部的第1導電性粒子之情形時,第1導電性粒子難以聚集於電極上,第1導電性粒子彼此之焊料接合性較低,故而有移動至電極上之第1導電性粒子容易向電極外移動之傾向,有抑制電極間之位置偏移之效果亦變低之傾向。因此,上述第1導電性粒子較佳為由焊料所形成之焊料粒子。 就有效地降低連接結構體之連接電阻,有效地抑制空隙之產生之觀點而言,較佳為於上述第1導電性粒子之外表面(焊料之外表面)存在羧基或胺基,較佳為存在羧基,較佳為存在胺基。較佳為於上述第1導電性粒子之外表面(焊料之外表面)經由Si-O鍵、醚鍵、酯鍵或下述式(X)所表示之基而共價鍵結有包含羧基或胺基之基。包含羧基或胺基之基亦可包含羧基與胺基兩者。再者,於下述式(X)中,右端部及左端部表示鍵結部位。 [化1]於焊料之表面存在羥基。藉由使該羥基與包含羧基之基共價鍵結,可形成相較於藉由其他之配位鍵結(螯合配位)等使其等鍵結之情形更強之鍵,故而獲得能夠降低電極間之連接電阻,且抑制空隙之產生的第1導電性粒子。 對於上述第1導電性粒子而言,焊料之表面與包含羧基之基之鍵結形態可不包含配位鍵結,亦可不包含藉由螯合配位而進行之鍵結。 就有效地降低連接結構體之連接電阻,有效地抑制空隙之產生之觀點而言,上述第1導電性粒子較佳為藉由如下方式獲得:使用具有能夠與羥基進行反應之官能基、及羧基或胺基之化合物(以下有時記載為化合物X),使上述能夠與羥基進行反應之官能基與焊料表面之羥基進行反應。於上述反應中形成共價鍵。藉由使焊料表面之羥基與上述化合物X中之上述能夠與羥基進行反應之官能基進行反應,可容易地獲得於焊料之表面共價鍵結有包含羧基或胺基之基的第1導電性粒子,亦可獲得於焊料之表面經由醚鍵或酯鍵而共價鍵結有包含羧基或胺基之基的第1導電性粒子。藉由使上述能夠與羥基進行反應之官能基與上述焊料表面之羥基進行反應,可使上述化合物X以共價鍵結之形態化學鍵結於焊料之表面。 作為上述能夠與羥基進行反應之官能基,可列舉:羥基、羧基、酯基及羰基等。較佳為羥基或羧基。上述能夠與羥基進行反應之官能基可為羥基,亦可為羧基。 作為具有能夠與羥基進行反應之官能基之化合物,可列舉:乙醯丙酸、戊二酸、乙醇酸、琥珀酸、蘋果酸、草酸、丙二酸、己二酸、5-氧代己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸、4-苯基丁酸、癸酸、十二烷酸、十四烷酸、十五烷酸、十六烷酸、9-十六碳烯酸、十七烷酸、硬脂酸、油酸、異油酸、亞麻油酸、(9,12,15)-次亞麻油酸、十九烷酸、花生酸、癸烷二酸及十二烷二酸等。較佳為戊二酸或乙醇酸。上述具有能夠與羥基進行反應之官能基的化合物可僅使用1種,亦可將2種以上併用。上述具有能夠與羥基進行反應之官能基的化合物較佳為具有至少1個羧基之化合物。 上述化合物X較佳為具有助焊劑作用,上述化合物X較佳為於鍵結於焊料之表面之狀態下具有助焊劑作用。具有助焊劑作用之化合物能夠將焊料表面之氧化膜及電極表面之氧化膜去除。羧基具有助焊劑作用。 作為具有助焊劑作用之化合物,可列舉:乙醯丙酸、戊二酸、乙醇酸、琥珀酸、5-氧代己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸及4-苯基丁酸等。較佳為戊二酸或乙醇酸。上述具有助焊劑作用之化合物可僅使用1種,亦可將2種以上併用。 就有效地降低連接結構體之連接電阻,有效地抑制空隙之產生之觀點而言,上述化合物X中之上述能夠與羥基進行反應之官能基較佳為羥基或羧基。上述化合物X中之上述能夠與羥基進行反應之官能基可為羥基,亦可為羧基。於上述能夠與羥基進行反應之官能基為羧基之情形時,上述化合物X較佳為具有至少2個羧基。藉由使具有至少2個羧基之化合物之一部分之羧基與焊料表面之羥基進行反應,可獲得於焊料之表面共價鍵結有包含羧基之基的第1導電性粒子。 上述第1導電性粒子之製造方法例如具備如下製程:使用第1導電性粒子,將該第1導電性粒子、具有能夠與羥基進行反應之官能基及羧基之化合物、觸媒及溶劑加以混合。於上述第1導電性粒子之製造方法中,藉由上述混合製程,可容易地獲得於焊料之表面共價鍵結有包含羧基之基的第1導電性粒子。 又,於上述第1導電性粒子之製造方法中,較佳為,使用第1導電性粒子,將該第1導電性粒子、具有上述能夠與羥基進行反應之官能基及羧基之化合物、上述觸媒及上述溶劑混合,並進行加熱。藉由混合及加熱製程,可更加容易地獲得於焊料之表面共價鍵結有包含羧基之基的第1導電性粒子。 作為上述溶劑,可列舉甲醇、乙醇、丙醇、丁醇等醇溶劑、或丙酮、甲基乙基酮、乙酸乙酯、甲苯及二甲苯等。上述溶劑較佳為有機溶劑,更佳為甲苯。上述溶劑可僅使用1種,亦可將2種以上併用。 作為上述觸媒,可列舉對甲苯磺酸、苯磺酸及10-樟腦磺酸等。上述觸媒較佳為對甲苯磺酸。上述觸媒可僅使用1種,亦可將2種以上併用。 較佳為於上述混合時進行加熱。加熱溫度較佳為90℃以上,更佳為100℃以上,且較佳為130℃以下,更佳為110℃以下。 就有效地降低連接結構體之連接電阻,有效地抑制空隙之產生之觀點而言,上述第1導電性粒子較佳為經由如下製程而獲得:使用異氰酸酯化合物,使上述異氰酸酯化合物與焊料表面之羥基進行反應。於上述反應中形成共價鍵。藉由使焊料表面之羥基與上述異氰酸酯化合物進行反應,可容易地獲得於焊料之表面共價鍵結有來自上述異氰酸基之基之氮原子的第1導電性粒子。藉由使上述異氰酸酯化合物與上述焊料表面之羥基進行反應,可使來自上述異氰酸基之基以共價鍵結之形態化學鍵結於焊料之表面。 又,可容易地使矽烷偶合劑與來自異氰酸基之基進行反應。由於可容易地獲得上述第1導電性粒子,故而上述包含羧基之基藉由使用具有羧基之矽烷偶合劑之反應而被導入,或藉由於使用矽烷偶合劑之反應後使具有至少1個羧基之化合物與來自矽烷偶合劑之基進行反應而被導入。上述第1導電性粒子較佳為藉由如下方式獲得:使用上述異氰酸酯化合物,使上述異氰酸酯化合物與焊料表面之羥基進行反應後,使具有至少1個羧基之化合物進行反應。 就有效地降低連接結構體之連接電阻,有效地抑制空隙之產生之觀點而言,上述具有至少1個羧基之化合物較佳為具有複數個羧基。 作為上述異氰酸酯化合物,可列舉二苯基甲烷-4,4'-二異氰酸酯(MDI)、六亞甲基二異氰酸酯(HDI)、甲苯二異氰酸酯(TDI)及異佛爾酮二異氰酸酯(IPDI)等。亦可使用該等以外之異氰酸酯化合物。藉由於使上述異氰酸酯化合物與焊料之表面進行反應後,使殘留異氰酸基與具有與該殘留異氰酸基之反應性且具有羧基之化合物進行反應,而可經由上述式(X)所表示之基將羧基導入至焊料之表面。 作為上述異氰酸酯化合物,亦可使用具有不飽和雙鍵且具有異氰酸基之化合物。例如可列舉異氰酸2-丙烯醯氧基乙酯及甲基丙烯酸2-異氰酸基乙酯。藉由於使該化合物之異氰酸基與焊料之表面進行反應後,使具有對殘留之不飽和雙鍵具有反應性之官能基且具有羧基之化合物進行反應,而可經由上述式(X)所表示之基將羧基導入至焊料之表面。 作為上述矽烷偶合劑,可列舉3-異氰酸基丙基三乙氧基矽烷(Shin-Etsu Silicones公司製造之「KBE-9007」)、及3-異氰酸基丙基三甲氧基矽烷(MOMENTIVE公司製造之「Y-5187」)等。上述矽烷偶合劑可僅使用1種,亦可將2種以上併用。 作為上述具有至少1個羧基之化合物,可列舉:乙醯丙酸、戊二酸、乙醇酸、琥珀酸、蘋果酸、草酸、丙二酸、己二酸、5-氧代己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸、4-苯基丁酸、癸酸、十二烷酸、十四烷酸、十五烷酸、十六烷酸、9-十六碳烯酸、十七烷酸、硬脂酸、油酸、異油酸、亞麻油酸、(9,12,15)-次亞麻油酸、十九烷酸、花生酸、癸烷二酸及十二烷二酸等。較佳為戊二酸、己二酸或乙醇酸。上述具有至少1個羧基之化合物可僅使用1種,亦可將2種以上併用。 藉由使用上述異氰酸酯化合物,使上述異氰酸酯化合物與焊料表面之羥基進行反應後,使具有複數個羧基之化合物之一部分羧基與焊料表面之羥基進行反應,而可使包含羧基之基殘留。 於上述第1導電性粒子之製造方法中,使用第1導電性粒子,且使用異氰酸酯化合物,使上述異氰酸酯化合物與焊料表面之羥基進行反應後,使具有至少1個羧基之化合物進行反應,從而獲得於焊料之表面經由上述式(X)所表示之基而鍵結有包含羧基之基的第1導電性粒子。於上述第1導電性粒子之製造方法中,藉由上述製程可容易地獲得包含羧基之基被導入至焊料之表面之第1導電性粒子。 作為上述第1導電性粒子之具體之製造方法,可列舉以下方法。使第1導電性粒子分散於有機溶劑中,並添加具有異氰酸基之矽烷偶合劑。其後,使用第1導電性粒子之焊料表面之羥基與異氰酸基之反應觸媒,使矽烷偶合劑共價鍵結於焊料之表面。繼而,藉由將鍵結於矽烷偶合劑之矽原子的烷氧基水解而生成羥基。使具有至少1個羧基之化合物之羧基與所生成之羥基進行反應。 又,作為上述第1導電性粒子之具體之製造方法,可列舉以下方法。使第1導電性粒子分散於有機溶劑中,並添加具有異氰酸基與不飽和雙鍵之化合物。其後,使用第1導電性粒子之焊料表面之羥基與異氰酸基之反應觸媒形成共價鍵。其後,使具有不飽和雙鍵及羧基之化合物與所導入之不飽和雙鍵進行反應。 作為第1導電性粒子之焊料表面之羥基與異氰酸基之反應觸媒,可列舉錫系觸媒(二月桂酸二丁基錫等)、胺系觸媒(三伸乙基二胺等)、羧酸酯觸媒(環烷酸鉛、乙酸鉀等)、及三烷基膦觸媒(三乙基膦等)等。 就有效地降低連接結構體之連接電阻,有效地抑制空隙之產生之觀點而言,上述具有至少1個羧基之化合物較佳為下述式(1)所表示之化合物。下述式(1)所表示之化合物具有助焊劑作用。又,下述式(1)所表示之化合物於被導入至焊料之表面之狀態下具有助焊劑作用。 [化2]上述式(1)中,X表示能夠與羥基進行反應之官能基,R表示碳數1~5之2價有機基。該有機基亦可包含碳原子、氫原子、及氧原子。該有機基亦可為碳數1~5之2價烴基。上述有機基之主鏈較佳為2價烴基。於該有機基中,2價烴基上亦可鍵結有羧基或羥基。上述式(1)所表示之化合物中例如包含檸檬酸。 上述具有至少1個羧基之化合物較佳為下述式(1A)或下述式(1B)所表示之化合物。上述具有至少1個羧基之化合物較佳為下述式(1A)所表示之化合物,更佳為下述式(1B)所表示之化合物。 [化3]上述式(1A)中,R表示碳數1~5之2價有機基。上述式(1A)中之R與上述式(1)中之R相同。 [化4]上述式(1B)中,R表示碳數1~5之2價有機基。上述式(1B)中之R與上述式(1)中之R相同。 較佳為於焊料之表面鍵結有下述式(2A)或下述式(2B)所表示之基。較佳為於焊料之表面鍵結有下述式(2A)所表示之基,更佳為於焊料之表面鍵結有下述式(2B)所表示之基。再者,於下述式(2A)中,左端部表示鍵結部位。 [化5]上述式(2A)中,R表示碳數1~5之2價有機基。上述式(2A)中之R與上述式(1)中之R相同。再者,於下述式(2B)中,左端部表示鍵結部位。 [化6]上述式(2B)中,R表示碳數1~5之2價有機基。上述式(2B)中之R與上述式(1)中之R相同。 就提高焊料表面之潤濕性之觀點而言,上述具有至少1個羧基之化合物之分子量較佳為10000以下,更佳為1000以下,進而較佳為500以下。 上述分子量於上述具有至少1個羧基之化合物並非聚合物之情形、及上述具有至少1個羧基之化合物之結構式可特定之情形時,意指可自該結構式算出之分子量。又,於上述具有至少1個羧基之化合物為聚合物之情形時,意指重量平均分子量。 就可於導電連接時有效地提高焊料粒子之凝聚性而言,上述第1導電性粒子較佳為具有第1導電性粒子本體、及配置於上述第1導電性粒子本體之表面上之陰離子聚合物。上述第1導電性粒子較佳為藉由利用陰離子聚合物或成為陰離子聚合物之化合物對第1導電性粒子本體進行表面處理而獲得。上述第1導電性粒子較佳為利用陰離子聚合物或成為陰離子聚合物之化合物之表面處理物。上述陰離子聚合物及上述成為陰離子聚合物之化合物分別可僅使用1種,亦可將2種以上併用。上述陰離子聚合物為具有酸性基之聚合物。 作為利用陰離子聚合物對第1導電性粒子本體進行表面處理之方法,可列舉如下方法:使用例如使(甲基)丙烯酸進行共聚而獲得之(甲基)丙烯酸聚合物、由二羧酸與二醇合成且於兩末端具有羧基之聚酯聚合物、藉由二羧酸之分子間脫水縮合反應而獲得且於兩末端具有羧基之聚合物、由二羧酸與二胺合成且於兩末端具有羧基之聚酯聚合物、以及具有羧基之改性聚乙烯醇(日本合成化學公司製造之「GOHSENX T」)等作為陰離子聚合物,使陰離子聚合物之羧基與第1導電性粒子本體之表面之羥基進行反應。 作為上述陰離子聚合物之陰離子部分,可列舉上述羧基,除此以外,可列舉甲苯磺醯基(p-H3 CC6 H4 S(=O)2 -)、磺酸離子基(-SO3 - )、及磷酸離子基(-PO4 - )等。 又,作為利用陰離子聚合物對第1導電性粒子本體進行表面處理之其他方法,可列舉如下方法:使用具有與第1導電性粒子本體之表面之羥基進行反應之官能基,進而具有可藉由加成、縮合反應進行聚合之官能基之化合物,使該化合物於第1導電性粒子本體之表面上聚合物化。作為與第1導電性粒子本體之表面之羥基進行反應之官能基,可列舉羧基、及異氰酸基等,作為藉由加成、縮合反應進行聚合之官能基,可列舉羥基、羧基、胺基、及(甲基)丙烯醯基。 上述陰離子聚合物之重量平均分子量較佳為2000以上,更佳為3000以上,且較佳為10000以下,更佳為8000以下。若上述重量平均分子量為上述下限以上及上述上限以下,則可對第1導電性粒子之表面導入充分量之電荷、及助焊性。藉此,可於導電連接時有效地提高第1導電性粒子之凝聚性,且可於連接對象構件之連接時有效地去除電極表面之氧化膜。 若上述重量平均分子量為上述下限以上及上述上限以下,則容易將陰離子聚合物配置於第1導電性粒子本體之表面上,可於導電連接時有效地提高第1導電性粒子之凝聚性,可更有效率地將第1導電性粒子配置於電極上。 上述重量平均分子量表示藉由凝膠滲透層析法(GPC)而測得之聚苯乙烯換算之重量平均分子量。 藉由利用成為陰離子聚合物之化合物對第1導電性粒子本體進行表面處理而獲得之聚合物之重量平均分子量可藉由如下方式求出:將第1導電性粒子中之焊料熔解,利用不會引起聚合物之分解之稀鹽酸等將第1導電性粒子去除後,對殘留之聚合物之重量平均分子量進行測定。 繼而,一面參照圖式,一面對第1導電性粒子之具體例進行說明。 圖4係表示可用於導電材料之第1導電性粒子之第1例的剖視圖。 圖4中所示之第1導電性粒子21為焊料粒子。第1導電性粒子21整體由焊料所形成。第1導電性粒子21於核不具有基材粒子,並非核殼粒子。第1導電性粒子21之中心部分及導電部之外表面部分均由焊料所形成。 圖5係表示可用於導電材料之第1導電性粒子之第2例的剖視圖。 圖5中所示之第1導電性粒子31具備基材粒子32、及配置於基材粒子32之表面上之導電部33。導電部33被覆基材粒子32之表面。第1導電性粒子31係基材粒子32之表面由導電部33被覆之被覆粒子。 導電部33具有第2導電部33A、及焊料部33B(第1導電部)。第1導電性粒子31於基材粒子32與焊料部33B之間具備第2導電部33A。因此,第1導電性粒子31具備基材粒子32、配置於基材粒子32之表面上之第2導電部33A、及配置於第2導電部33A之外表面上之焊料部33B。 圖6係表示可用於導電材料之第1導電性粒子之第3例的剖視圖。 如上所述,第1導電性粒子31中之導電部33具有2層結構。圖6中所示之第1導電性粒子41具有焊料部42作為單層之導電部。第1導電性粒子41具備基材粒子32、及配置於基材粒子32之表面上之焊料部42。 作為上述基材粒子,可列舉樹脂粒子、除金屬粒子以外之無機粒子、有機無機混合粒子及金屬粒子等。上述基材粒子較佳為除金屬以外之基材粒子,較佳為樹脂粒子、除金屬粒子以外之無機粒子或有機無機混合粒子。上述基材粒子亦可為銅粒子。上述基材粒子亦可為具備核、及配置於該核之表面上之殼的核殼粒子。上述核亦可為有機核,上述殼亦可為無機殼。 作為用以形成上述樹脂粒子之樹脂,可較佳地使用各種有機物。作為用以形成上述樹脂粒子之樹脂,例如可列舉:聚乙烯、聚丙烯、聚苯乙烯、聚氯乙烯、聚偏二氯乙烯、聚異丁烯、聚丁二烯等聚烯烴樹脂;聚甲基丙烯酸甲酯及聚丙烯酸甲酯等丙烯酸系樹脂;聚碳酸酯、聚醯胺、酚甲醛樹脂、三聚氰胺-甲醛樹脂、苯胍胺甲醛樹脂、脲甲醛樹脂、酚樹脂、三聚氰胺樹脂、苯胍胺樹脂、脲樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、聚對苯二甲酸乙二酯、聚碸、聚苯醚、聚縮醛、聚醯亞胺、聚醯胺醯亞胺、聚醚醚酮、聚醚碸、二乙烯苯聚合物、以及二乙烯苯系共聚物等。作為上述二乙烯苯系共聚物等,可列舉二乙烯苯-苯乙烯共聚物及二乙烯苯-(甲基)丙烯酸酯共聚物等。由於可容易地將上述樹脂粒子之硬度控制為較佳之範圍,故而用以形成上述樹脂粒子之樹脂較佳為使1種或2種以上之具有乙烯性不飽和基之聚合性單體進行聚合而成之聚合物。 於使具有乙烯性不飽和基之聚合性單體進行聚合而獲得上述樹脂粒子之情形時,作為該具有乙烯性不飽和基之聚合性單體,可列舉非交聯性之單體及交聯性之單體。 作為上述非交聯性之單體,例如可列舉:苯乙烯、α-甲基苯乙烯等苯乙烯系單體;(甲基)丙烯酸、馬來酸、馬來酸酐等含羧基單體;(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸鯨蠟酯、(甲基)丙烯酸硬脂酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸異𦯉基酯等(甲基)丙烯酸烷基酯化合物;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸甘油酯、聚氧乙烯(甲基)丙烯酸酯、(甲基)丙烯酸縮水甘油酯等含氧原子(甲基)丙烯酸酯化合物;(甲基)丙烯腈等含腈單體;甲基乙烯醚、乙基乙烯醚、丙基乙烯醚等乙烯醚化合物;乙酸乙烯酯、丁酸乙烯酯、月桂酸乙烯酯、硬脂酸乙烯酯等酸乙烯酯化合物;乙烯、丙烯、異戊二烯、丁二烯等不飽和烴;三氟(甲基)丙烯酸甲酯、五氟(甲基)丙烯酸乙酯、氯乙烯、氟乙烯、氯苯乙烯等含鹵素單體等。 作為上述交聯性之單體,例如可列舉:四羥甲基甲烷四(甲基)丙烯酸酯、四羥甲基甲烷三(甲基)丙烯酸酯、四羥甲基甲烷二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、三(甲基)丙烯酸甘油酯、二(甲基)丙烯酸甘油酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、(聚)四亞甲基二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等多官能(甲基)丙烯酸酯化合物;(異)氰尿酸三烯丙酯、偏苯三酸三烯丙酯、二乙烯苯、鄰苯二甲酸二烯丙酯、二烯丙基丙烯醯胺、二烯丙醚、γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷、三甲氧基矽烷基苯乙烯、乙烯基三甲氧基矽烷等含矽烷單體等。 可藉由利用公知之方法使上述具有乙烯性不飽和基之聚合性單體進行聚合而獲得上述樹脂粒子。作為該方法,例如可列舉:於自由基聚合起始劑之存在下進行懸浮聚合之方法、以及使用非交聯之種粒子使自由基聚合起始劑與單體一併膨潤而進行聚合之方法等。 於上述基材粒子為除金屬粒子以外之無機粒子或有機無機混合粒子之情形時,作為用以形成基材粒子之無機物,可列舉二氧化矽、氧化鋁、鈦酸鋇、氧化鋯及碳黑等。上述無機物較佳為非金屬。作為由上述二氧化矽所形成之粒子,並無特別限定,例如可列舉藉由如下方式而獲得之粒子,即,於將具有2個以上之水解性之烷氧基矽烷基之矽化物水解而形成交聯聚合物粒子後,視需要進行焙燒。作為上述有機無機混合粒子,例如可列舉由經交聯之烷氧基矽烷基聚合物與丙烯酸系樹脂所形成之有機無機混合粒子等。 上述有機無機混合粒子較佳為具有核、及配置於該核之表面上之殼之核殼型之有機無機混合粒子。上述核較佳為有機核。上述殼較佳為無機殼。就更有效地降低電極間之連接電阻之觀點而言,上述基材粒子較佳為具有有機核、及配置於上述有機核之表面上之無機殼之有機無機混合粒子。 作為上述有機核之材料,可列舉上述之樹脂粒子之材料等。 作為上述無機殼之材料,可列舉上述之作為基材粒子之材料而列舉之無機物。上述無機殼之材料較佳為二氧化矽。上述無機殼較佳為藉由如下方式形成:藉由溶膠凝膠法使金屬烷氧化物於上述核之表面上形成殼狀物後,對該殼狀物進行焙燒。上述金屬烷氧化物較佳為烷氧化矽烷。上述無機殼較佳為由烷氧化矽烷而形成。 於上述基材粒子為金屬粒子之情形時,作為用以形成該金屬粒子之金屬,可列舉銀、銅、鎳、矽、金及鈦等。於上述基材粒子為金屬粒子之情形時,該金屬粒子較佳為銅粒子。但是,上述基材粒子較佳為非金屬粒子。 上述基材粒子之粒徑較佳為0.5 μm以上,更佳為1 μm以上,進而較佳為3 μm以上,且較佳為100 μm以下,更佳為60 μm以下,進而較佳為50 μm以下。若上述基材粒子之粒徑為上述下限以上,則導電性粒子與電極之接觸面積變大,故而電極間之導通可靠性進一步提高,可更有效地降低經由導電性粒子而連接之電極間之連接電阻。進而,於在基材粒子之表面形成導電部時難以凝聚,難以形成凝聚之導電性粒子。若上述基材粒子之粒徑為上述上限以下,則導電性粒子容易被充分地壓縮,可更有效地降低經由導電性粒子而連接之電極間之連接電阻。 上述基材粒子之粒徑尤佳為5 μm以上且40 μm以下。若上述基材粒子之粒徑為5 μm以上且40 μm以下之範圍內,則可使電極間之間隔更小,且即便使導電部之厚度較厚,亦可獲得較小之導電性粒子。 上述基材粒子之粒徑於基材粒子為真球狀之情形時表示直徑,於基材粒子並非真球狀之情形時表示最大直徑。 上述基材粒子之粒徑表示數量平均粒徑。上述基材粒子之粒徑係使用粒度分佈測定裝置等而求出。基材粒子之粒徑較佳為藉由如下方式求出:利用電子顯微鏡或光學顯微鏡觀察任意50個基材粒子,算出平均值。於在導電性粒子中測定上述基材粒子之粒徑之情形時,例如可以如下方式進行測定。 以導電性粒子之含量成為30重量%之方式添加至Kulzer公司製造之「Technovit4000」中,並使其分散,製作導電性粒子檢查用埋入樹脂。以通過檢查用埋入樹脂中分散之導電性粒子之中心附近之方式,使用離子研磨裝置(Hitachi High-Technologies公司製造之「IM4000」)切出導電性粒子之剖面。繼而,使用場發射型掃描式電子顯微鏡(FE-SEM),將圖像倍率設定為25000倍,隨機選擇50個導電性粒子,觀察各導電性粒子之基材粒子。測量各導電性粒子中之基材粒子之粒徑,算出其等之算術平均值而設為基材粒子之粒徑。 於上述基材粒子之表面上形成導電部之方法、以及於上述基材粒子之表面上或上述第2導電部之表面上形成焊料部之方法並無特別限定。作為形成上述導電部及上述焊料部之方法,例如可列舉:利用無電電鍍之方法、利用電鍍之方法、利用物理性碰撞之方法、利用機械化學反應之方法、利用物理性蒸鍍或物理性吸附之方法、以及將金屬粉末或包含金屬粉末及黏合劑之膏塗覆於基材粒子之表面之方法等。形成上述導電部及上述焊料部之方法較佳為利用無電電鍍、電鍍或物理性碰撞之方法。作為上述利用物理性蒸鍍之方法,可列舉真空蒸鍍、離子鍍覆及離子濺鍍等方法。又,於上述利用物理性碰撞之方法中,例如使用Theta Composer(德壽工作所公司製造)等。 上述基材粒子之熔點較佳為高於上述導電部及上述焊料部之熔點。上述基材粒子之熔點較佳為超過160℃,更佳為超過300℃,進而較佳為超過400℃,尤佳為超過450℃。再者,上述基材粒子之熔點亦可未達400℃。上述基材粒子之熔點亦可為160℃以下。上述基材粒子之軟化點較佳為260℃以上。上述基材粒子之軟化點亦可未達260℃。 上述第1導電性粒子亦可具有單層之焊料部。上述第1導電性粒子亦可具有複數層之導電部(焊料部、第2導電部)。即,上述第1導電性粒子中亦可積層2層以上之導電部。於上述導電部為2層以上之情形時,上述第1導電性粒子較佳為於導電部之外表面部分具有焊料。 上述焊料較佳為熔點為450℃以下之金屬(低熔點金屬)。上述焊料部較佳為熔點為450℃以下之金屬層(低熔點金屬層)。上述低熔點金屬層係包含低熔點金屬之層。上述第1導電性粒子中之焊料較佳為熔點為450℃以下之金屬粒子(低熔點金屬粒子)。上述低熔點金屬粒子係包含低熔點金屬之粒子。所謂該低熔點金屬,表示熔點為450℃以下之金屬。低熔點金屬之熔點較佳為300℃以下,更佳為160℃以下。又,上述第1導電性粒子中之焊料較佳為包含錫。上述焊料部中所包含之金屬100重量%中及上述第1導電性粒子中之焊料中所包含之金屬100重量%中,錫之含量較佳為30重量%以上,更佳為40重量%以上,進而較佳為70重量%以上,尤佳為90重量%以上。若上述第1導電性粒子中之焊料中之錫之含量為上述下限以上,則第1導電性粒子與電極之導通可靠性進一步提高。 再者,上述錫之含量可使用高頻感應耦合電漿發射光譜分析裝置(堀場製作所公司製造之「ICP-AES」)、或螢光X射線分析裝置(島津製作所公司製造之「EDX-800HS」)等進行測定。 藉由使用於導電部之外表面部分具有上述焊料之第1導電性粒子,而焊料熔融而與電極接合,焊料使電極間導通。例如,由於焊料與電極容易面接觸而非點接觸,故而連接電阻變低。又,藉由於導電部之外表面部分具有焊料之第1導電性粒子之使用,而焊料與電極之接合強度提高,結果,更加難以產生焊料與電極之剝離,導通可靠性有效地提高。 構成上述焊料部及上述焊料粒子之低熔點金屬並無特別限定。該低熔點金屬較佳為錫、或包含錫之合金。該合金可列舉錫-銀合金、錫-銅合金、錫-銀-銅合金、錫-鉍合金、錫-鋅合金、錫-銦合金等。就對電極之潤濕性優異之方面而言,上述低熔點金屬較佳為錫、錫-銀合金、錫-銀-銅合金、錫-鉍合金、錫-銦合金。更佳為錫-鉍合金、錫-銦合金。 構成上述焊料(焊料部)之材料較佳為基於JIS Z3001:焊接用語而液相線為450℃以下之熔填材料。作為上述焊料之組成,例如可列舉包含鋅、金、銀、鉛、銅、錫、鉍、銦等之金屬組成。較佳為低熔點且無鉛之錫-銦系(117℃共晶)、或錫-鉍系(139℃共晶)。即,上述焊料較佳為不含鉛,較佳為包含錫及銦之焊料、或包含錫及鉍之焊料。 為了進一步提高上述焊料與電極之接合強度,上述第1導電性粒子中之焊料亦可包含鎳、銅、銻、鋁、鋅、鐵、金、鈦、磷、鍺、碲、鈷、鉍、錳、鉻、鉬、鈀等金屬。又,就更進一步提高焊料與電極之接合強度之觀點而言,上述第1導電性粒子中之焊料較佳為包含鎳、銅、銻、鋁或鋅。就進一步提高焊料部或第1導電性粒子中之焊料與電極之接合強度之觀點而言,用以提高接合強度之該等金屬之含量於上述第1導電性粒子中之焊料100重量%中較佳為0.0001重量%以上,且較佳為1重量%以下。 上述第2導電部之熔點較佳為高於上述焊料部之熔點。上述第2導電部之熔點較佳為超過160℃,更佳為超過300℃,進而較佳為超過400℃,進而更佳為超過450℃,尤佳為超過500℃,最佳為超過600℃。上述焊料部由於熔點較低,故而於導電連接時熔融。上述第2導電部較佳為於導電連接時不熔融。上述第1導電性粒子較佳為使焊料熔融而使用,較佳為使上述焊料部熔融而使用,較佳為使上述焊料部熔融且不使上述第2導電部熔融地使用。藉由上述第2導電部之熔點高於上述焊料部之熔點,而可於導電連接時不使上述第2導電部熔融而僅使上述焊料部熔融。 上述焊料部之熔點與上述第2導電部之熔點之差之絕對值超過0℃,較佳為5℃以上,更佳為10℃以上,進而較佳為30℃以上,尤佳為50℃以上,最佳為100℃以上。 上述第2導電部較佳為包含金屬。構成上述第2導電部之金屬並無特別限定。作為該金屬,例如可列舉金、銀、銅、鉑、鈀、鋅、鉛、鋁、鈷、銦、鎳、鉻、鈦、銻、鉍、鍺及鎘、以及該等之合金等。又,作為上述金屬,亦可使用摻錫氧化銦(ITO)。上述金屬可僅使用1種,亦可將2種以上併用。 上述第2導電部較佳為鎳層、鈀層、銅層或金層,更佳為鎳層或金層,進而較佳為銅層。第1導電性粒子較佳為具有鎳層、鈀層、銅層或金層,更佳為具有鎳層或金層,進而較佳為具有銅層。藉由將具有該等較佳之導電部之第1導電性粒子用於電極間之連接,而電極間之連接電阻進一步降低。又,可更加容易地於該等較佳之導電部之表面形成焊料部。 上述焊料部之厚度較佳為0.005 μm以上,更佳為0.01 μm以上,且較佳為10 μm以下,更佳為1 μm以下,進而較佳為0.3 μm以下。若焊料部之厚度為上述下限以上及上述上限以下,則可獲得充分之導電性,且第1導電性粒子不會變得過硬而於電極間之連接時第1導電性粒子充分地變形。 上述第1導電性粒子之平均粒徑較佳為0.5 μm以上,更佳為1 μm以上,進而較佳為3 μm以上,且較佳為100 μm以下,更佳為50 μm以下,進而較佳為40 μm以下,尤佳為30 μm以下。若上述第1導電性粒子之平均粒徑為上述下限以上及上述上限以下,則可更有效率地將第1導電性粒子中之焊料配置於電極上,容易將第1導電性粒子中之焊料大量配置於電極間,導通可靠性進一步提高。 上述第1導電性粒子之「平均粒徑」表示數量平均粒徑。第1導電性粒子之平均粒徑例如藉由如下方式求出:利用電子顯微鏡或光學顯微鏡觀察任意50個第1導電性粒子,算出平均值。 上述第1導電性粒子之粒徑之CV(coefficient of variation,變異係數)值較佳為5%以上,更佳為10%以上,且較佳為40%以下,更佳為30%以下。若上述粒徑之CV值為上述下限以上及上述上限以下,則可更有效率地將焊料配置於電極上。但是,上述導電性粒子之粒徑之CV值亦可未達5%。 上述第1導電性粒子之粒徑之CV值(變異係數)可以如下方式進行測定。 CV值(%)=(ρ/Dn)×100 ρ:第1導電性粒子之粒徑之標準偏差 Dn:第1導電性粒子之粒徑之平均值 上述第1導電性粒子之形狀並無特別限定。上述第1導電性粒子之形狀可為球狀,亦可為扁平狀等球形狀以外之形狀。 上述第1導電性粒子之酸值較佳為0.1 mg/KOH以上,更佳為1 mg/KOH以上,且較佳為10 mg/KOH以下,更佳為7 mg/KOH以下。若上述酸值為上述下限以上及上述上限以下,則硬化物之耐熱性進一步提高,硬化物之變色進一步得到抑制。 上述酸值可以如下方式進行測定。向乙醇中添加酚酞並利用0.1N-KOH進行中和而獲得溶液50 ml,對該溶液添加第1導電性粒子1 g,藉由超音波處理使其分散後,利用0.1N-KOH進行滴定。 上述導電材料100重量%中,上述第1導電性粒子之含量較佳為1重量%以上,更佳為2重量%以上,進而較佳為10重量%以上,尤佳為20重量%以上,最佳為30重量%以上,且較佳為90重量%以下,更佳為80重量%以下,進而較佳為60重量%以下,尤佳為50重量%以下。若上述第1導電性粒子之含量為上述下限以上及上述上限以下,則可更有效率地將第1導電性粒子中之焊料配置於電極上,容易將第1導電性粒子中之焊料大量配置於電極間,導通可靠性進一步提高。就進一步提高導通可靠性之觀點而言,上述第1導電性粒子之含量較佳為較多。 (第2導電性粒子) 上述第2導電性粒子於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑(包含銀、釕、銥、金、鈀或鉑之導電部)。上述第2導電性粒子亦可為由銀、釕、銥、金、鈀或鉑所形成之金屬粒子。上述金屬粒子於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑。上述金屬粒子係中心部分及導電部之外表面均為銀、釕、銥、金、鈀或鉑之粒子。上述金屬粒子不具有基材粒子作為核粒子。上述金屬粒子不同於具備基材粒子、及配置於上述基材粒子之表面上之導電部的導電性粒子。上述導電部之外表面部分及上述包含銀、釕、銥、金、鈀或鉑之導電部例如包含較佳為80重量%以上、更佳為90重量%以上、進而較佳為95重量%以上之銀、釕、銥、金、鈀及鉑。上述第2導電性粒子亦可具有基材粒子、及配置於該基材粒子之表面上之導電部。於該情形時,上述第2導電性粒子於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑。 上述第2導電性粒子之導電部之外表面部分之熔點高於上述第1導電性粒子之導電部之外表面部分。上述第2導電性粒子之導電部之外表面部分及上述包含銀、釕、銥、金、鈀或鉑之導電部之熔點較佳為較上述第1導電性粒子之導電部之外表面部分高50℃以上,較佳為高100℃以上。上述第2導電性粒子之導電部之外表面部分及上述包含銀、釕、銥、金、鈀或鉑之導電部之熔點較佳為300℃以上,更佳為400℃以上,進而較佳為500℃以上。 作為上述第2導電性粒子中之基材粒子,可列舉與上述第1導電性粒子中之基材粒子相同之基材粒子。 又,第2導電性粒子亦可為將圖4中所示之導電性粒子21中之焊料變更為銀、釕、銥、金、鈀或鉑而成之導電性粒子。第2導電性粒子亦可為將圖5中所示之導電性粒子31中之第2導電部33B之焊料變更為銀、釕、銥、金、鈀或鉑而成之導電性粒子。第2導電性粒子亦可為將圖6中所示之導電性粒子41中之焊料部42之焊料變更為銀、釕、銥、金、鈀或鉑而成之導電性粒子。 包含銀、釕、銥、金、鈀或鉑之導電部只要包含選自由銀、釕、銥、金、鈀及鉑所組成之群中之至少1種金屬即可。包含銀、釕、銥、金、鈀或鉑之導電部亦可包含2種以上之選自由銀、釕、銥、金、鈀及鉑所組成之群中之金屬。包含銀、釕、銥、金、鈀或鉑之導電部中,銀、釕、銥、金、鈀及鉑亦可合金化。 就更有效率地將第1導電性粒子中之焊料配置於電極上之觀點而言,上述第2導電性粒子較佳為於導電部之外表面部分具有銀、金、鈀或鉑,更佳為於導電部之外表面部分具有銀、金或鈀,進而較佳為於導電部之外表面部分具有金或鈀,尤佳為於導電部之外表面部分具有金。 上述包含銀、釕、銥、金、鈀或鉑之導電部之厚度較佳為0.005 μm以上,更佳為0.01 μm以上,且較佳為10 μm以下,更佳為1 μm以下,進而較佳為0.3 μm以下。若包含銀、釕、銥、金、鈀或鉑之導電部之厚度為上述下限以上及上述上限以下,則可獲得充分之導電性。 上述第2導電性粒子之平均粒徑較佳為3 μm以上,且較佳為50 μm以下,更佳為20 μm以下,進而較佳為10 μm以下。若上述第2導電性粒子為上述下限以上及上述上限以下,則可藉由第2導電性粒子更有效率地將第1導電性粒子中之焊料配置於電極上。 上述第1導電性粒子之平均粒徑相對於上述第2導電性粒子之平均粒徑之比(第1導電性粒子之平均粒徑/第2導電性粒子之平均粒徑)較佳為1以上,更佳為2以上,進而較佳為3以上,且較佳為4以下。若上述比(第1導電性粒子之平均粒徑/第2導電性粒子之平均粒徑)為上述下限以上及上述上限以下,則可藉由第2導電性粒子更有效率地將第1導電性粒子中之焊料配置於電極上。 就有效率地將焊料配置於電極上之觀點而言,上述第2導電性粒子之平均粒徑尤佳為小於上述第1導電性粒子之平均粒徑。 上述第2導電性粒子之「平均粒徑」表示數量平均粒徑。第2導電性粒子之平均粒徑例如藉由如下方式求出:利用電子顯微鏡或光學顯微鏡觀察任意50個第2導電性粒子,算出平均值。 上述第2導電性粒子之形狀並無特別限定。上述第2導電性粒子之形狀可為球狀,亦可為扁平狀等球形狀以外之形狀。 上述導電材料100重量%中,上述第2導電性粒子之含量較佳為1重量%以上,更佳為3量%以上。若上述第2導電性粒子之含量為上述下限以上,則可藉由第2導電性粒子更有效率地將第1導電性粒子中之焊料配置於電極上。 上述導電材料100重量%中,上述第2導電性粒子之含量較佳為10重量%以下,更佳為5重量%以下。若上述第2導電性粒子之含量為上述下限以上,則可藉由第2導電性粒子更有效率地將第1導電性粒子中之焊料配置於電極上,且可進一步提高連接部之接合強度。 就更有效率地將第1導電性粒子中之焊料配置於電極上之觀點而言,上述第1導電性粒子之含量相對於上述第2導電性粒子之含量的比以重量基準計較佳為3以上,更佳為10以上,且較佳為80以下,更佳為70以下。 (熱硬化性化合物) 上述熱硬化性化合物係可藉由加熱而硬化之化合物。作為上述熱硬化性化合物,可列舉氧雜環丁烷化合物、環氧化合物、環硫化合物、(甲基)丙烯酸化合物、酚化合物、胺基化合物、不飽和聚酯化合物、聚胺基甲酸酯化合物、聚矽氧化合物及聚醯亞胺化合物等。就使導電材料之硬化性及黏度更加良好,進一步提高連接可靠性之觀點而言,較佳為環氧化合物或環硫化合物。上述熱硬化性化合物可僅使用1種,亦可將2種以上併用。 就更有效地將焊料配置於電極上之觀點而言,上述熱硬化性化合物較佳為包含具有聚醚骨架之熱硬化性化合物。 作為具有聚醚骨架之熱硬化性化合物,可列舉:於碳數3~12之烷基鏈之兩末端具有縮水甘油醚基之化合物、以及具備具有碳數2~4之聚醚骨架且2~10個該聚醚骨架連續地鍵結而成之結構單元的聚醚型環氧化合物等。 就有效地提高硬化物之耐熱性之觀點、以及有效地降低硬化物之介電常數之觀點而言,上述熱硬化性化合物較佳為包含具有三𠯤骨架之熱硬化性化合物。 作為上述具有三𠯤骨架之熱硬化性化合物,可列舉三𠯤三縮水甘油醚等,可列舉日產化學工業公司製造之TEPIC Series(TEPIC-G、TEPIC-S、TEPIC-SS、TEPIC-HP、TEPIC-L、TEPIC-PAS、TEPIC-VL、TEPIC-UC)等。 作為上述環氧化合物,可列舉芳香族環氧化合物。較佳為間苯二酚型環氧化合物、萘型環氧化合物、聯苯型環氧化合物、二苯甲酮型環氧化合物等晶質環氧化合物。較佳為於常溫(23℃)下為固體且熔融溫度為焊料之熔點以下之環氧化合物。熔融溫度較佳為100℃以下,更佳為80℃以下,且較佳為40℃以上。藉由使用上述較佳之環氧化合物,而於將連接對象構件貼合之階段中黏度較高,於因搬送等之衝擊而被賦予加速度時,可抑制第1連接對象構件與第2連接對象構件之位置偏移,而且,藉由硬化時之熱,可使導電材料之黏度大幅降低,可使焊料之凝聚高效率地進行。 就更有效地將焊料配置於電極上之觀點而言,上述熱硬化性化合物較佳為包含於25℃下為液狀之熱硬化性化合物。 上述導電材料100重量%中,上述熱硬化性化合物之含量較佳為20重量%以上,更佳為40重量%以上,進而較佳為50重量%以上,且較佳為99重量%以下,更佳為98重量%以下,進而較佳為90重量%以下,尤佳為80重量%以下。若上述熱硬化性化合物之含量為上述下限以上及上述上限以下,則可更有效率地將導電性粒子中之焊料配置於電極上,可進一步抑制電極間之位置偏移,可進一步提高電極間之導通可靠性。就進一步提高耐衝擊性之觀點而言,上述熱硬化性化合物之含量較佳為較多。 (熱硬化劑) 上述熱硬化劑使上述熱硬化性化合物熱硬化。作為上述熱硬化劑,有咪唑硬化劑、酚硬化劑、硫醇硬化劑、胺硬化劑、酸酐硬化劑、熱陽離子起始劑及熱自由基產生劑等。上述熱硬化劑可僅使用1種,亦可將2種以上併用。 作為上述咪唑硬化劑,並無特別限定,可列舉2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-苯基咪唑鎓偏苯三酸鹽、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三𠯤及2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三𠯤異三聚氰酸加成物等。 作為上述硫醇硬化劑,並無特別限定,可列舉三羥甲基丙烷三-3-巰基丙酸酯、季戊四醇四-3-巰基丙酸酯及二季戊四醇六-3-巰基丙酸酯等。 上述硫醇硬化劑之溶解度參數較佳為9.5以上,且較佳為12以下。上述溶解度參數係藉由Fedors法而計算。例如,三羥甲基丙烷三-3-巰基丙酸酯之溶解度參數為9.6,二季戊四醇六-3-巰基丙酸酯之溶解度參數為11.4。 作為上述胺硬化劑,並無特別限定,可列舉六亞甲基二胺、八亞甲基二胺、十亞甲基二胺、3,9-雙(3-胺基丙基)-2,4,8,10-四螺[5.5]十一烷、雙(4-胺基環己基)甲烷、間苯二胺及二胺基二苯基碸等。 作為上述熱陽離子起始劑,可列舉錪系陽離子硬化劑、系陽離子硬化劑及鋶系陽離子硬化劑等。作為上述錪系陽離子硬化劑,可列舉雙(4-第三丁基苯基)錪六氟磷酸鹽等。作為上述系陽離子硬化劑,可列舉三甲基四氟硼酸鹽等。作為上述鋶系陽離子硬化劑,可列舉三-對甲苯基鋶六氟磷酸鹽等。 作為上述熱自由基產生劑,並無特別限定,可列舉偶氮化合物及有機過氧化物等。作為上述偶氮化合物,可列舉偶氮二異丁腈(AIBN)等。作為上述有機過氧化物,可列舉二-第三丁基過氧化物及甲基乙基酮過氧化物等。 上述熱硬化劑之反應開始溫度較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為250℃以下,更佳為200℃以下,進而較佳為150℃以下,尤佳為140℃以下。若上述熱硬化劑之反應開始溫度為上述下限以上及上述上限以下,則可更有效率地將第1導電性粒子配置於電極上。上述熱硬化劑之反應開始溫度尤佳為80℃以上且140℃以下。 就更有效率地將焊料配置於電極上之觀點而言,上述熱硬化劑之反應開始溫度較佳為高於上述第1導電性粒子中之焊料之熔點,更佳為高5℃以上,進而較佳為高10℃以上。 上述熱硬化劑之反應開始溫度意指DSC(Differential Scanning Calorimetry,示差掃描量熱法)中之發熱波峰之上升開始之溫度。 上述熱硬化劑之含量並無特別限定。相對於上述熱硬化性化合物之整體100重量份,上述熱硬化劑之含量較佳為0.01重量份以上,更佳為1重量份以上,且較佳為200重量份以下,更佳為100重量份以下,進而較佳為75重量份以下。若熱硬化劑之含量為上述下限以上,則容易使導電材料充分地硬化。若熱硬化劑之含量為上述上限以下,則硬化後不易殘留未參與硬化之剩餘之熱硬化劑,且硬化物之耐熱性進一步提高。 (助焊劑) 上述導電材料較佳為包含助焊劑。藉由助焊劑之使用,可更有效地將焊料配置於電極上。該助焊劑並無特別限定。作為助焊劑,可使用通常用於焊接等之助焊劑。 作為上述助焊劑,例如可列舉氯化鋅、氯化鋅與無機鹵化物之混合物、氯化鋅與無機酸之混合物、熔融鹽、磷酸、磷酸之衍生物、有機鹵化物、肼、有機酸及松脂等。上述助焊劑可僅使用1種,亦可將2種以上併用。 作為上述熔融鹽,可列舉氯化銨等。作為上述有機酸,可列舉乳酸、檸檬酸、硬脂酸、麩胺酸及戊二酸等。作為上述松脂,可列舉活性松脂及非活性松脂等。上述助焊劑較佳為具有2個以上之羧基之有機酸、松脂。上述助焊劑可為具有2個以上之羧基之有機酸,亦可為松脂。藉由具有2個以上之羧基之有機酸、松脂之使用,而電極間之導通可靠性進一步提高。 上述松脂係以松香酸為主成分之松脂類。助焊劑較佳為松脂類,更佳為松香酸。藉由該較佳之助焊劑之使用,而電極間之導通可靠性進一步提高。 上述助焊劑之活性溫度(熔點)較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為200℃以下,更佳為190℃以下,更佳為160℃以下,進而較佳為150℃以下,進而更佳為140℃以下。若上述助焊劑之活性溫度為上述下限以上及上述上限以下,則可更有效地發揮助焊劑效果,可更有效率地將第1導電性粒子配置於電極上。上述助焊劑之活性溫度(熔點)較佳為80℃以上且190℃以下。上述助焊劑之活性溫度(熔點)尤佳為80℃以上且140℃以下。 作為助焊劑之活性溫度(熔點)為80℃以上且190℃以下之上述助焊劑,可列舉琥珀酸(熔點186℃)、戊二酸(熔點96℃)、己二酸(熔點152℃)、庚二酸(熔點104℃)、辛二酸(熔點142℃)等二羧酸、苯甲酸(熔點122℃)、蘋果酸(熔點130℃)等。 又,上述助焊劑之沸點較佳為200℃以下。 就更有效率地將焊料配置於電極上之觀點而言,上述助焊劑之熔點較佳為高於上述第1導電性粒子中之焊料之熔點,更佳為高5℃以上,進而較佳為高10℃以上。 就更有效率地將焊料配置於電極上之觀點而言,上述助焊劑之熔點較佳為高於上述熱硬化劑之反應開始溫度,更佳為高5℃以上,進而較佳為高10℃以上。 上述助焊劑可分散於導電材料中,亦可附著於第1導電性粒子之表面上。 藉由助焊劑之熔點高於焊料之熔點,可使第1導電性粒子有效率地凝聚於電極部分。其原因在於:於在接合時進行加熱之情形時,若將形成於連接對象構件上之電極與電極周邊之連接對象構件之部分進行比較,則電極部分之熱導率高於電極周邊之連接對象構件部分之熱導率,藉此,電極部分之升溫較快。於超過第1導電性粒子之熔點之階段,第1導電性粒子之內部熔解,但形成於表面之氧化覆膜由於未達到助焊劑之熔點(活性溫度),故而未被去除。於該狀態下,由於電極部分之溫度先達到助焊劑之熔點(活性溫度),故而優先到達電極上之第1導電性粒子之表面之氧化覆膜被去除,第1導電性粒子可於電極之表面上潤濕擴散。藉此,可使第1導電性粒子有效率地凝聚於電極上。 上述助焊劑較佳為藉由加熱而釋出陽離子之助焊劑。藉由使用藉由加熱而釋出陽離子之助焊劑,可更有效率地將第1導電性粒子配置於電極上。 作為上述藉由加熱而釋出陽離子之助焊劑,可列舉上述熱陽離子起始劑。 上述導電材料100重量%中,上述助焊劑之含量較佳為0.5重量%以上,且較佳為30重量%以下,更佳為25重量%以下。上述導電材料亦可不包含助焊劑。若助焊劑之含量為上述下限以上及上述上限以下,則更難於焊料及電極之表面形成氧化覆膜,進而,可更有效地去除形成於焊料及電極之表面之氧化覆膜。 (絕緣性粒子) 上述導電材料較佳為包含絕緣性粒子。於上述導電材料中,上述絕緣性粒子亦可未附著於上述第1導電性粒子之表面及上述第2導電性粒子之表面中之任一表面。上述導電材料中,上述絕緣性粒子較佳為與上述第1導電性粒子隔開而存在,上述絕緣性粒子較佳為與上述第2導電性粒子隔開而存在。藉由包含上述絕緣性粒子,可高精度地控制藉由導電材料之硬化物而連接之連接對象構件間之間隔、以及藉由第1導電性粒子中之焊料而連接之連接對象構件間之間隔。 上述絕緣性粒子之平均粒徑較佳為10 μm以上,更佳為20 μm以上,進而較佳為25 μm以上,且較佳為100 μm以下,更佳為75 μm以下,進而較佳為50 μm以下。若上述絕緣性粒子之平均粒徑為上述下限以上及上述上限以下,則藉由導電材料之硬化物而連接之連接對象構件間之間隔、以及藉由第1導電性粒子中之焊料而連接之連接對象構件間之間隔會變得更加適度。 作為上述絕緣性粒子之材料,可列舉絕緣性之樹脂、及絕緣性之無機物等。 關於作為上述絕緣性粒子之材料之絕緣性樹脂之具體例,可列舉聚烯烴化合物、(甲基)丙烯酸酯聚合物、(甲基)丙烯酸酯共聚物、嵌段聚合物、熱塑性樹脂、熱塑性樹脂之交聯物、熱硬化性樹脂及水溶性樹脂等。 作為上述聚烯烴化合物,可列舉聚乙烯、乙烯-乙酸乙烯酯共聚物及乙烯-丙烯酸酯共聚物等。作為上述(甲基)丙烯酸酯聚合物,可列舉聚(甲基)丙烯酸甲酯、聚(甲基)丙烯酸乙酯及聚(甲基)丙烯酸丁酯等。作為上述嵌段聚合物,可列舉聚苯乙烯、苯乙烯-丙烯酸酯共聚物、SB(styrene-butadiene,苯乙烯-丁二烯)型苯乙烯-丁二烯嵌段共聚物、及SBS(styrene-butadiene-styrene,苯乙烯-丁二烯-苯乙烯)型苯乙烯-丁二烯嵌段共聚物、以及該等之氫化物等。作為上述熱塑性樹脂,可列舉乙烯基聚合物及乙烯基共聚物等。作為上述熱硬化性樹脂,可列舉環氧樹脂、酚樹脂及三聚氰胺樹脂等。作為上述水溶性樹脂,可列舉聚乙烯醇、聚丙烯酸、聚丙烯醯胺、聚乙烯吡咯啶酮、聚環氧乙烷及甲基纖維素等。較佳為水溶性樹脂,更佳為聚乙烯醇。 關於作為上述絕緣性粒子之材料之絕緣性之無機物之具體例,可列舉二氧化矽及有機無機混合粒子等。作為由上述二氧化矽所形成之粒子,並無特別限定,例如可列舉藉由如下方式而獲得之粒子,即,於將具有2個以上之水解性之烷氧基矽烷基之矽化物水解而形成交聯聚合物粒子後,視需要進行焙燒。作為上述有機無機混合粒子,例如可列舉由經交聯之烷氧基矽烷基聚合物與丙烯酸系樹脂所形成之有機無機混合粒子等。 上述導電材料100重量%中,上述絕緣性粒子之含量較佳為0.1重量%以上,更佳為0.5重量%以上,且較佳為10重量%以下,更佳為5重量%以下。上述導電材料亦可不包含絕緣性粒子。若絕緣性粒子之含量為上述下限以上及上述上限以下,則藉由導電材料之硬化物而連接之連接對象構件間之間隔、以及藉由焊料而連接之連接對象構件間之間隔會變得更加適度。 (其他成分) 上述導電材料視需要亦可包含例如填充劑、增量劑、軟化劑、塑化劑、聚合觸媒、硬化觸媒、著色劑、抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、潤滑劑、抗靜電劑及阻燃劑等各種添加劑。 (連接結構體及連接結構體之製造方法) 本發明之連接結構體具備於表面具有至少1個第1電極之第1連接對象構件、於表面具有至少1個第2電極之第2連接對象構件、及將上述第1連接對象構件與上述第2連接對象構件連接之連接部。於本發明之連接結構體中,上述連接部之材料係上述之導電材料。上述連接部係上述之導電材料之硬化物。上述連接部係由上述之導電材料而形成。於本發明之連接結構體中,上述第1電極與上述第2電極藉由上述連接部中之焊料部而電性連接。 上述連接部具有硬化物部、焊料部、及於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑之第2導電性粒子。於上述連接結構體中,上述焊料部內配置有上述第2導電性粒子。上述第2導電性粒子較佳為於導電部之外表面部分具有金、鈀或鉑。 上述連接結構體之製造方法具備如下製程:使用上述之導電材料,將上述導電材料配置於在表面具有至少1個第1電極之第1連接對象構件之表面上之製程;將於表面具有至少1個第2電極之第2連接對象構件以上述第1電極與上述第2電極對向之方式配置於上述導電材料之與上述第1連接對象構件側為相反側之表面上之製程;以及藉由將上述導電材料加熱至上述第1導電性粒子中之焊料之熔點以上,而利用上述導電材料形成將上述第1連接對象構件與上述第2連接對象構件連接之連接部,且藉由上述連接部中之焊料部將上述第1電極與上述第2電極電性連接之製程。較佳為,將上述導電材料加熱至上述熱硬化性成分、熱硬化性化合物之硬化溫度以上。於所獲得之連接結構體中,焊料部內配置有上述第2導電性粒子。 於本發明之連接結構體及上述連接結構體之製造方法中,由於使用有特定之導電材料,故而藉由第2導電性粒子而複數個第1導電性粒子中之焊料容易聚集於第1電極與第2電極之間,可有效率地將焊料配置於電極(線)上。又,焊料之一部分難以配置於未形成電極之區域(間隔),可大幅減少配置於未形成電極之區域之焊料之量。因此,可提高第1電極與第2電極之間之導通可靠性。並且,可防止不可連接之於橫方向上鄰接之電極間之電性連接,可提高絕緣可靠性。 又,為了有效率地將複數個第1導電性粒子中之焊料配置於電極上,且大幅減少配置於未形成電極之區域之焊料之量,較佳為使用導電膏而非導電膜。 電極間之焊料部之厚度較佳為10 μm以上,更佳為20 μm以上,且較佳為100 μm以下,更佳為80 μm以下。電極之表面上之焊料潤濕面積(電極露出之面積100%中之焊料接觸之面積、相對於形成上述連接部之前之上述第1電極與電性連接於上述第1電極之上述第2電極露出之面積100%的形成上述連接部之後之上述焊料部接觸之面積)較佳為50%以上,更佳為70%以上,且較佳為100%以下。 上述第2導電性粒子之平均粒徑可為電極間之焊料部之厚度之同等以下,亦可未達電極間之焊料部之厚度,可為電極間之焊料部之厚度之1/2以下,亦可為電極間之焊料部之厚度之1/3以下。 以下,一面參照圖式一面對本發明之具體之實施形態進行說明。 圖1係模式性地表示使用本發明之一實施形態之導電材料而獲得之連接結構體的剖視圖。 圖1中所示之連接結構體1具備第1連接對象構件2、第2連接對象構件3、及將第1連接對象構件2與第2連接對象構件3連接之連接部4。連接部4係由上述之導電材料所形成。於本實施形態中,導電材料包含焊料粒子作為第1導電性粒子。 連接部4具有複數個焊料粒子聚集並相互接合而成之焊料部4A、使熱硬化性成分熱硬化而成之硬化物部4B、及第2導電性粒子11C。 第1連接對象構件2於表面(上表面)具有複數個第1電極2a。第2連接對象構件3於表面(下表面)具有複數個第2電極3a。第1電極2a與第2電極3a藉由焊料部4A而電性連接。因此,第1連接對象構件2與第2連接對象構件3藉由焊料部4A而電性連接。又,於連接結構體1中,焊料部4A內配置有第2導電性粒子11C。 再者,於連接部4中,與聚集於第1電極2a與第2電極3a之間之焊料部4A不同之區域(硬化物部4B部分)不存在焊料。與焊料部4A不同之區域(硬化物部4B部分)不存在與焊料部4A隔開之焊料。再者,若為少量,則與聚集於第1電極2a與第2電極3a之間之焊料部4A不同之區域(硬化物部4B部分)亦可存在焊料。又,於連接部4中,聚集於第1電極2a與第2電極3a之間之焊料部4A以外之區域(硬化物部4B部分)不存在第2導電性粒子11C。焊料部4A之區域(硬化物部4B部分)不存在與焊料部4A隔開之第2導電性粒子11C。再者,若為少量,則聚集於第1電極2a與第2電極3a之間之焊料部4A以外之區域(硬化物部4B部分)亦可存在第2導電性粒子11C。 如圖1所示,於連接結構體1中,複數個焊料粒子聚集於第1電極2a與第2電極3a之間,複數個焊料粒子熔融後,焊料粒子之熔融物於電極之表面潤濕擴散後固化而形成焊料部4A。因此,焊料部4A與第1電極2a、以及焊料部4A與第2電極3a之連接面積變大。因此,連接結構體1之導通可靠性及連接可靠性提高。再者,導電材料中所包含之助焊劑通常因加熱而逐漸失活。 再者,圖1中所示之連接結構體1中,焊料部4A全部位於第1、第2電極2a、3a間之對向之區域。圖3中所示之變化例之連接結構體1X僅連接部4X不同於圖1中所示之連接結構體1。連接部4X具有焊料部4XA及硬化物部4XB。如連接結構體1X般,焊料部4XA多數位於第1、第2電極2a、3a之對向之區域,焊料部4XA之一部分亦可從第1、第2電極2a、3a之對向之區域向側面伸出。從第1、第2電極2a、3a之對向之區域向側面伸出之焊料部4XA係焊料部4XA之一部分,並非與焊料部4XA隔開之焊料。再者,於本實施形態中,雖然可減少與焊料部隔開之焊料之量,但硬化物部中亦可存在與焊料部隔開之焊料。再者,對於連接結構體1X,焊料部4XA內亦配置有第2導電性粒子11C。 若減少焊料粒子之使用量,則變得容易獲得連接結構體1。若增加焊料粒子之使用量,則變得容易獲得連接結構體1X。 就進一步提高導通可靠性之觀點而言,較佳為於沿上述第1電極、上述連接部、及上述第2電極之積層方向觀察上述第1電極與上述第2電極相對向之部分時,於上述第1電極與上述第2電極相對向之部分之面積100%中之50%以上(較佳為60%以上,更佳為70%以上)配置有上述連接部中之焊料部。 就進一步提高導通可靠性之觀點而言,較佳為於沿與上述第1電極、上述連接部、及上述第2電極之積層方向正交之方向觀察上述第1電極與上述第2電極相對向之部分時,於上述第1電極與上述第2電極相對向之部分配置有上述連接部中之焊料部之60%以上(較佳為70%以上,更佳為90%以上,進而較佳為99%以上)。 就進一步提高導通可靠性及絕緣可靠性之觀點而言,上述連接部內之第2導電性粒子之總個數100%中,上述配置於焊料部內之第2導電性粒子之個數之比例較佳為50%以上,更佳為80%以上,進而較佳為90%以上,尤佳為95%以上。 其次,對使用本發明之一實施形態之導電材料而製造連接結構體1之方法之一例進行說明。 首先,準備於表面(上表面)具有第1電極2a之第1連接對象構件2。其次,如圖2(a)所示,於第1連接對象構件2之表面上配置包含熱硬化性成分11B、複數個焊料粒子11A、複數個第2導電性粒子11C之導電材料11(第1製程)。所使用之導電材料包含熱硬化性化合物及熱硬化劑作為熱硬化性成分11B。 於第1連接對象構件2之設置有第1電極2a之表面上配置導電材料11。於配置導電材料11後,焊料粒子11A配置於第1電極2a(線)上、及未形成第1電極2a之區域(間隔)上之兩者。 作為導電材料11之配置方法,並無特別限定,可列舉利用分注器所進行之塗佈、網版印刷、及利用噴墨裝置所進行之噴出等。 又,準備於表面(下表面)具有第2電極3a之第2連接對象構件3。其次,如圖2(b)所示,於第1連接對象構件2之表面上之導電材料11中,於導電材料11之與第1連接對象構件2側為相反側之表面上配置第2連接對象構件3(第2製程)。從第2電極3a側將第2連接對象構件3配置於導電材料11之表面上。此時,使第1電極2a與第2電極3a對向。 其次,將導電材料11加熱至焊料粒子11A之熔點以上(第3製程)。較佳為將導電材料11加熱至熱硬化性成分11B(黏合劑)之硬化溫度以上。於該加熱時,存在於未形成電極之區域的焊料粒子11A會聚集於第1電極2a與第2電極3a之間(自凝聚效果)。此時,存在於複數個焊料粒子11A間之第2導電性粒子11C會吸引焊料粒子11A而促進焊料粒子11A之移動。於使用導電膏而非導電膜之情形時,焊料粒子11A有效地聚集於第1電極2a與第2電極3a之間。又,焊料粒子11A熔融並相互接合。又,熱硬化性成分11B發生熱硬化。結果如圖2(c)所示,由導電材料11形成將第1連接對象構件2與第2連接對象構件3連接之連接部4。藉由利用導電材料11形成連接部4,複數個焊料粒子11A接合而形成焊料部4A,藉由使熱硬化性成分11B熱硬化而形成硬化物部4B。又,焊料部4A內配置、引入有第2導電性粒子11C。只要焊料粒子11A充分地移動,則從未位於第1電極2a與第2電極3a之間之焊料粒子11A開始移動至焊料粒子11A向第1電極2a與第2電極3a間之移動結束之前,亦可不將溫度保持為固定。 於本實施形態中,較佳為於上述第2製程及上述第3製程中不進行加壓。於該情形時,第2連接對象構件3之重量施加於導電材料11。因此,於形成連接部4時,焊料粒子11A有效地聚集於第1電極2a與第2電極3a之間。再者,若於上述第2製程及上述第3製程中之至少一者中進行加壓,則焊料粒子11A欲向第1電極2a與第2電極3a之間聚集之作用受到阻礙之傾向變高。 又,於本實施形態中,由於未進行加壓,故而於將第2連接對象構件重疊於塗佈有導電材料之第1連接對象構件上時,即便於第1連接對象構件之電極與第2連接對象構件之電極之對準偏移之狀態下使第1連接對象構件與第2連接對象構件重疊之情形時,亦可修正其偏移而使第1連接對象構件之電極與第2連接對象構件之電極連接(自對準效果)。其原因在於:對於在第1連接對象構件之電極與第2連接對象構件之電極之間自凝聚之熔融之焊料而言,第1連接對象構件之電極與第2連接對象構件之電極之間之焊料、與導電材料之其他成分接觸之面積成為最小時對於能量穩定,因此形成成為該最小面積之連接結構即經對準之連接結構之力發揮作用。此時,較理想為導電材料未硬化,及於該溫度、時間之條件下導電材料之導電性粒子以外之成分之黏度充分低。 以此方式獲得圖1中所示之連接結構體1。再者,上述第2製程與上述第3製程亦可連續進行。又,亦可於進行上述第2製程後,使所獲得之第1連接對象構件2、導電材料11、及第2連接對象構件3之積層體移動至加熱部而進行上述第3製程。為了進行上述加熱,可將上述積層體配置於加熱構件上,亦可將上述積層體配置於經加熱之空間內。 上述第3製程中之上述加熱溫度較佳為140℃以上,更佳為160℃以上,且較佳為450℃以下,更佳為250℃以下,進而較佳為200℃以下。 作為上述第3製程中之加熱方法,可列舉:使用回焊爐或使用烘箱將連接結構體整體加熱至焊料之熔點以上及熱硬化性化合物之硬化溫度以上之方法、或局部地僅對連接結構體之連接部進行加熱之方法。 上述第1、第2連接對象構件並無特別限定。作為上述第1、第2連接對象構件,具體而言,可列舉半導體晶片、半導體封裝體、LED(Light Emitting Diode,發光二極體)晶片、LED封裝體、電容器及二極體等電子零件、以及樹脂膜、印刷基板、軟性印刷基板、軟性扁平電纜、剛性軟性基板、玻璃環氧基板及玻璃基板等電路基板等電子零件等。上述第1、第2連接對象構件較佳為電子零件。 較佳為上述第1連接對象構件及上述第2連接對象構件中之至少一者為樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板。較佳為上述第2連接對象構件為樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板。樹脂膜、軟性印刷基板、軟性扁平電纜及剛性軟性基板具有柔軟性較高,相對輕量之性質。於對此種連接對象構件之連接使用導電膜之情形時,有焊料難以聚集於電極上之傾向。相對於此,藉由使用導電膏,而即便使用樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板,亦可有效率地使焊料聚集於電極上,藉此可充分地提高電極間之導通可靠性。於使用樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板之情形時,與使用半導體晶片等其他連接對象構件之情形相比,可更有效地獲得藉由不進行加壓之電極間之導通可靠性之提高效果。 作為設置於上述連接對象構件之電極,可列舉金電極、鎳電極、錫電極、鋁電極、銅電極、鉬電極、銀電極、SUS(Steel Use Stainless,不鏽鋼)電極、及鎢電極等金屬電極。於上述連接對象構件為軟性印刷基板之情形時,上述電極較佳為金電極、鎳電極、錫電極、銀電極或銅電極。於上述連接對象構件為玻璃基板之情形時,上述電極較佳為鋁電極、銅電極、鉬電極、銀電極或鎢電極。再者,於上述電極為鋁電極之情形時,可為僅由鋁所形成之電極,亦可為於金屬氧化物層之表面積層有鋁層之電極。作為上述金屬氧化物層之材料,可列舉摻有3價金屬元素之氧化銦及摻有3價金屬元素之氧化鋅等。作為上述3價金屬元素,可列舉Sn、Al及Ga等。 以下,列舉實施例及比較例具體地對本發明進行說明。本發明不僅限於以下實施例。 聚合物A: (1)雙酚F與1,6-己二醇二縮水甘油醚及雙酚F型環氧樹脂之第1反應物之合成: 將雙酚F(以重量比計以2:3:1包含4,4'-亞甲基雙酚、2,4'-亞甲基雙酚、及2,2'-亞甲基雙酚)72重量份、1,6-己二醇二縮水甘油醚270重量份、雙酚F型環氧樹脂(DIC公司製造之「EPICLON EXA-830CRP」)30重量份加入三口燒瓶中,於氮氣流且100℃下使其等熔解。其後,添加作為羥基與環氧基之加成反應觸媒之四-正丁基溴化鋶0.1重量份,於氮氣流且130℃下使其等進行6小時加成聚合反應,藉此獲得第1反應物。 藉由NMR(Nuclear Magnetic Resonance,核磁共振)確認加成聚合反應已進行,確認第1反應物於主鏈具有來自雙酚F之羥基與1,6-己二醇二縮水甘油醚、及雙酚F型環氧樹脂之環氧基鍵結之結構單元,且於兩末端具有環氧基。 (2)聚合物A之合成: 將上述第1反應物100重量份加入三口燒瓶中,於氮氣流且120℃下使其熔解。其後,添加Shin-Etsu Silicones公司製造之「KBE-9007」(3-異氰酸基丙基三乙氧基矽烷)2重量份,並添加作為第1反應物之側鏈羥基與3-異氰酸基丙基三乙氧基矽烷之異氰酸基之反應觸媒之二月桂酸二丁基錫0.002重量份,於氮氣流且120℃下使其等反應4小時。其後,於110℃下真空乾燥5小時,將未反應之KBE-9007去除。 藉由NMR確認第1反應物之側鏈羥基與3-異氰酸基丙基三乙氧基矽烷之異氰酸基之反應已進行,確認所獲得之化合物於主鏈具有來自雙酚F之羥基與1,6-己二醇二縮水甘油醚、及雙酚F型環氧樹脂之環氧基鍵結之結構單元,且於兩末端具有環氧基,於側鏈具有丙基三乙氧基矽烷基。藉此獲得苯氧基樹脂(聚合物A)。 熱硬化性化合物1:間苯二酚型環氧化合物、共榮社化學公司製造之「Epolight TDC-LC」、環氧當量120 g/eq 熱硬化性化合物2:環氧化合物、ADEKA公司製造之「EP-3300」、環氧當量160 g/eq 光聚合起始劑:醯基氧化膦系化合物、Ciba Japan公司製造之「DAROCUR TPO」 鏈轉移劑:季戊四醇四(3-巰基丁酸酯)、昭和電工公司製造之「Karenz MT PE1」 潛伏性環氧熱硬化劑:T&K TOKA公司製造之「Fujicure7000」 助焊劑1: 將戊二酸25重量份、及戊二酸單甲酯25重量份加入三口燒瓶中,於氮氣流且80℃下使其等熔解。其後,添加苄胺57重量份,於80℃且減壓下(4 Torr以下)使其等反應2小時,藉此獲得於25℃下為固體之助焊劑1。 絕緣性粒子:平均粒徑30 μm、CV值5%、軟化點330℃、積水化學工業公司製造、二乙烯苯交聯粒子 焊料粒子1: 使用作為觸媒之對甲苯磺酸,將Sn-3Ag-0.5Cu焊料粒子(三井金屬公司製造之「ST-5」、平均粒徑(中值徑)30 μm)、及檸檬酸(和光純藥工業公司製造之「檸檬酸」)於甲苯溶劑中且90℃下一面脫水一面攪拌8小時,藉此獲得於焊料之表面共價鍵結有包含羧基之基的焊料粒子1(CV值20%)。 焊料粒子2: 稱量Sn-3Ag-0.5Cu焊料粒子(三井金屬公司製造之「ST-5」、平均粒徑(中值徑)30 μm)200 g、具有異氰酸基之矽烷偶合劑(Shin-Etsu Silicones公司製造之「KBE-9007」)10 g、及丙酮70 g至三口燒瓶中。於室溫下一面攪拌一面添加作為焊料粒子表面之羥基與異氰酸基之反應觸媒之二月桂酸二丁基錫0.25 g,於攪拌下,於氮氣環境且100℃下加熱2小時。其後,添加甲醇50 g,於攪拌下,於氮氣環境且60℃下加熱1小時。 其後,冷卻至室溫,利用濾紙將焊料粒子過濾,藉由真空乾燥於室溫下進行1小時脫溶劑。 將上述焊料粒子加入三口燒瓶中,並添加丙酮70 g、檸檬酸三甲酯30 g、及作為酯交換反應觸媒之單丁基氧化錫0.5 g,於攪拌下,於氮氣環境且60℃下使其等反應1小時。 藉此,藉由酯交換反應使檸檬酸三甲酯之酯基與來自矽烷偶合劑之矽烷醇基進行反應,使其等共價鍵結。 其後,追加檸檬酸10 g,於60℃下使其等反應1小時,藉此使檸檬酸對檸檬酸三甲酯之未與矽烷醇基進行反應之殘留甲酯基進行加成。 其後,冷卻至室溫,利用濾紙將焊料粒子過濾,於濾紙上利用己烷將焊料粒子洗淨,將未反應、及藉由非共價鍵附著於焊料粒子之表面之殘留檸檬酸三甲酯、檸檬酸去除後,藉由真空乾燥於室溫下進行1小時脫溶劑。 利用球磨機將所獲得之焊料粒子壓碎後,以成為特定之CV值之方式選擇篩網。藉此獲得焊料粒子2(CV值20%)。 (焊料粒子及導電性粒子之粒徑之CV值) 利用雷射繞射式粒度分佈測定裝置(堀場製作所公司製造之「LA-920」)測定CV值。 第2導電性粒子1:於二乙烯苯樹脂粒子之表面上配置有金層(厚度0.02 μm)之導電性粒子(平均粒徑15 μm) 第2導電性粒子2:於二乙烯苯樹脂粒子之表面上配置有鈀層(厚度0.02 μm)之導電性粒子(平均粒徑15 μm) 第2導電性粒子3:於二乙烯苯樹脂粒子之表面上配置有鉑層(厚度0.02 μm)之導電性粒子(平均粒徑15 μm) 第2導電性粒子6:於二乙烯苯樹脂粒子之表面上配置有釕層(厚度0.02 μm)之導電性粒子(平均粒徑15 μm) 第2導電性粒子7:於二乙烯苯樹脂粒子之表面上配置有銥層(厚度0.02 μm)之導電性粒子(平均粒徑15 μm) 第2導電性粒子4:於二乙烯苯樹脂粒子之表面上配置有金層(厚度0.02 μm)之導電性粒子(平均粒徑10 μm) 第2導電性粒子5:於二乙烯苯樹脂粒子之表面上配置有金層(厚度0.02 μm)之導電性粒子(平均粒徑30 μm) (實施例1~13及比較例1~2) (1)導電材料之製作 以下述表1、2中所示之調配量調配下述表1、2中所示之成分而獲得導電材料(導電膏)。 (2)連接結構體之製作 準備於上表面具有L/S為45 μm/45 μm、電極長度3 mm之銅電極圖案(銅電極之厚度12 μm),進而於其周邊形成有複數個銅箔焊墊之長條之載帶。又,準備於下表面具有L/S為45 μm/45 μm之電極的半導體元件。於上述長條之載帶之上表面,於銅電極圖案上以厚度成為100 μm之方式塗佈上述導電膏,形成導電膏層。繼而,利用貼片機安裝上述半導體元件。進而,將焊料膏(千住金屬工業公司製造之「M705-GRN360-K2V」)塗佈於上述複數個銅箔焊墊後,利用貼片機將1005尺寸之晶片電阻零件安裝於上述銅箔焊墊之塗佈膜上。其後,於回焊爐中進行回焊處理而獲得將半導體元件及晶片電阻零件與電極連接而成之連接結構體。 (評價) (1)黏度(η25) 使用E型黏度計(東機產業公司製造之「TVE22L」))於25℃及5 rpm之條件下測定導電膏之25℃下之黏度(η25)。 (2)黏度 使用STRESSTECH(EOLOGICA公司製造),於應變控制1 rad、頻率1 Hz、升溫速度20℃/分鐘、測定溫度範圍40℃~焊料之熔點之條件下測定第1導電性粒子中之焊料之熔點下之導電膏之黏度(ηmp)。於該測定中,讀取焊料之熔點下之黏度。 (3)焊料部之厚度 藉由對所獲得之連接結構體之剖面進行觀察,而對位於上下電極間之焊料部之厚度進行評價。 (4)電極上之焊料之配置精度1 對在所獲得之連接結構體中沿第1電極、焊料部、及第2電極之積層方向觀察第1電極與第2電極相對向之部分時之第1電極與第2電極相對向之部分之面積100%中之配置有焊料部之面積之比例X進行評價。以下述基準判定電極上之焊料之配置精度1。 [電極上之焊料之配置精度1之判定基準] ○○:比例X為70%以上 ○:比例X為60%以上且未達70% △:比例X為50%以上且未達60% ×:比例X未達50% (5)焊料部內之第2導電性粒子之配置精度2 對所獲得之連接結構體中上述連接部內之第2導電性粒子之總個數100%中配置於上述焊料部內之第2導電性粒子之個數之比例Y進行評價。以下述基準判定焊料部內之第2導電性粒子之配置精度2。 [焊料部內之第2導電性粒子之配置精度2之判定基準] ○○○:個數之比例Y為95%以上 ○○:個數之比例Y為90%以上且未達95% ○:個數之比例Y為80%以上且未達90% △:個數之比例Y為50%以上且未達80% ×:個數之比例Y未達50% (6)上下電極間之導通可靠性 於所獲得之連接結構體(n=15個)中,藉由四端子法分別測定上下電極間之每一連接處之連接電阻。算出連接電阻之平均值。再者,可根據電壓=電流×電阻之關係,藉由測定使一定之電流流過時之電壓而求出連接電阻。以下述基準判定導通可靠性。但是,於n=15個中即便有一個係上下電極間未導通之情形時,亦判定為「×」。 [導通可靠性之判定基準] ○○:連接電阻之平均值為50 mΩ以下 ○:連接電阻之平均值超過50 mΩ且為70 mΩ以下 △:連接電阻之平均值超過70 mΩ且為100 mΩ以下 ×:連接電阻之平均值超過100 mΩ或產生連接不良 (7)於橫方向上鄰接之電極間之絕緣可靠性 於所獲得之連接結構體(n=15個)中,於85℃、濕度85%之環境中放置100小時後,對在橫方向上鄰接之電極間施加15 V,於25處測定電阻值。以下述基準判定絕緣可靠性。但是,於n=15個中即便有一個係於橫方向上鄰接之電極間導通之情形時,亦判定為「×」。 [絕緣可靠性之判定基準] ○○○:連接電阻之平均值為1014 Ω以上 ○○:連接電阻之平均值為108 Ω以上且未達1014 Ω ○:連接電阻之平均值為106 Ω以上且未達108 Ω △:連接電阻之平均值為105 Ω以上且未達106 Ω ×:連接電阻之平均值未達105 Ω 將結果示於下述表1、2。 [表1] [表2] Hereinafter, the details of the present invention will be described. (Conductive material) The conductive material of the present invention includes first conductive particles, second conductive particles, a thermosetting compound, and a thermosetting agent. The first conductive particle has a conductive portion. The first conductive particles have solder on an outer surface portion of the conductive portion. The solder is contained in the conductive portion and is a part or all of the conductive portion. The second conductive particle has a conductive portion. The second conductive particle has silver, ruthenium, iridium, gold, palladium, or platinum on an outer surface portion of the conductive portion. Silver, ruthenium, iridium, gold, palladium, or platinum is contained in the conductive portion, and is a part or all of the conductive portion. In the present invention, since the above-mentioned structure is provided, the speed at which the solder moves to the electrodes becomes faster, the solder can be efficiently disposed between the electrodes to be connected, and the conduction reliability and insulation reliability can be improved. When the electrode width or the width between electrodes is narrow, it is difficult to gather the solder on the electrodes. However, in the present invention, even if the electrode width or the width between the electrodes is narrow, the solder can be sufficiently gathered on the electrodes. . In the present invention, since the above-mentioned configuration is provided, when the electrodes are electrically connected, the solder is easily gathered between the electrodes facing up and down, and the solder can be efficiently disposed on the electrodes (wires). Further, in the present invention, if a certain electrode width is wide, the solder is more efficiently disposed on the electrode. The reason why the above-mentioned effect is exhibited is that during the conductive connection, since the second conductive particles exist between the plurality of first conductive particles, the first conductive particles are attracted to the other first conductive via the second conductive particles. Sex particles. Since the second conductive particle has silver, ruthenium, iridium, gold, palladium, or platinum on the outer surface portion of the conductive portion, it has the effect of attracting solder. Moreover, in the present invention, it is difficult to dispose a part of the solder in a region (interval) where no electrode is formed, and the amount of solder disposed in a region where no electrode is formed can be greatly reduced. In the present invention, the solder which is not located between the opposed electrodes can be efficiently moved to between the opposed electrodes. Therefore, the conduction reliability between the electrodes can be improved. In addition, it is possible to prevent electrical connection between electrodes that are not connectable in the lateral direction and improve insulation reliability. Furthermore, in the present invention, it is possible to prevent a positional shift between the electrodes. In the present invention, when the second connection target member is superimposed on the first connection target member on which the conductive material is disposed on the upper surface, the electrode of the first connection target member and the electrode of the second connection target member are aligned. When the first connection target member and the second connection target member are overlapped in the offset state, the offset may be corrected so that the electrode of the first connection target member and the electrode of the second connection target member are connected (self-aligned). effect). In order to arrange the solder on the electrode more efficiently, the conductive material is preferably liquid at 25 ° C, and is preferably a conductive paste. In order to arrange the solder on the electrode more efficiently, the viscosity (η25) of the above conductive material at 25 ° C is preferably 10 Pa · s or more, more preferably 50 Pa · s or more, and even more preferably 100 Pa · s. Above, it is preferably 800 Pa · s or less, more preferably 600 Pa · s or less, and even more preferably 500 Pa · s or less. The viscosity (η25) can be appropriately adjusted by the type and amount of the compounding ingredients. The viscosity (η25) can be measured, for example, using an E-type viscometer ("TVE22L" manufactured by Toki Sangyo Co., Ltd.) at 25 ° C and 5 rpm. In order to arrange the solder on the electrode more efficiently, the viscosity (ηmp) of the conductive material at the melting point of the solder in the first conductive particles is preferably 2 Pa · s or more, and more preferably 3 Pa · s or more. It is more preferably 4 Pa · s or more, more preferably 10 Pa · s or less, still more preferably 9 Pa · s or less, and still more preferably 8 Pa · s or less. The viscosity (ηmp) can be appropriately adjusted by the type and amount of the blending ingredients. The melting point of the solder is a temperature that easily affects the movement of the first conductive particles onto the electrode. The viscosity (ηmp) can be measured, for example, under the conditions of STRESSTECH (manufactured by EOLOGICA) equal to a strain control of 1 rad, a frequency of 1 Hz, a heating rate of 20 ° C / min, and a measurement temperature range of 40 ° C to the melting point of the solder. In this measurement, the viscosity at the melting point of the solder is read. The above conductive materials can be used as a conductive paste, a conductive film, and the like. The conductive film is preferably an anisotropic conductive film. From the viewpoint of more efficiently disposing the solder on the electrode, the conductive material is preferably a conductive paste. The above conductive material can be preferably used for the electrical connection of the electrodes. The conductive material is preferably a circuit connection material. Hereinafter, each component contained in the said conductive material is demonstrated. Furthermore, in this specification, "(meth) acrylic acid" means one or both of "acrylic acid" and "methacrylic acid", and "(meth) acrylate" means "acrylate" and "formaldehyde" One or both of "methacrylate" and "(meth) acryl" refers to one or both of "acryl" and "methacryl". (First conductive particle) The first conductive particle is used to electrically connect the electrodes of a connection target member. The first conductive particles have solder on an outer surface portion of the conductive portion. The first conductive particles may be solder particles made of solder. The solder particles have solder on an outer surface portion of the conductive portion. Both the central portion of the solder particles and the outer surface portion of the conductive portion are formed of solder. The solder particles are particles of solder on the central portion and the outer surface of the conductive portion. The said solder particle does not have a base material particle as a core particle. The solder particles are different from conductive particles including a substrate particle and a conductive portion disposed on a surface of the substrate particle. The solder particles include, for example, preferably 80% by weight or more, more preferably 90% by weight or more, and still more preferably 95% by weight or more. The first conductive particle may include a substrate particle and a conductive portion disposed on a surface of the substrate particle. In this case, the first conductive particles have solder on the outer surface portion of the conductive portion. In addition, compared with the case where the above-mentioned solder particles are used, when the first conductive particles having base material particles not formed of solder and solder portions arranged on the surface of the base material particles are used, the first conductive material is used. It is difficult for the conductive particles to collect on the electrodes, and the solderability of the first conductive particles to each other is low. Therefore, the first conductive particles moved to the electrodes tend to move outside the electrodes, and the positional displacement between the electrodes is suppressed. The effect also tends to decrease. Therefore, the first conductive particles are preferably solder particles made of solder. From the viewpoint of effectively reducing the connection resistance of the connection structure and effectively suppressing the generation of voids, it is preferable that a carboxyl group or an amine group is present on the outer surface (the outer surface of the solder) of the first conductive particle, and more preferably A carboxyl group is present, preferably an amine group. The outer surface of the first conductive particle (the outer surface of the solder) is preferably covalently bonded to a group containing a carboxyl group through a Si-O bond, an ether bond, an ester bond, or a group represented by the following formula (X). Amino group. The group containing a carboxyl group or an amine group may also include both a carboxyl group and an amine group. In addition, in the following formula (X), the right end part and the left end part represent a bonding site. [Chemical 1]There are hydroxyl groups on the surface of the solder. By covalently bonding the hydroxyl group to a group containing a carboxyl group, a stronger bond than that obtained by other coordination bonds (chelation coordination) or the like can be formed. First conductive particles that reduce the connection resistance between electrodes and suppress the generation of voids. In the first conductive particle, the bonding form between the surface of the solder and the group containing a carboxyl group may not include a coordination bond, or a bond by chelate coordination. From the viewpoint of effectively reducing the connection resistance of the connection structure and effectively suppressing the generation of voids, the first conductive particles are preferably obtained by using a functional group capable of reacting with a hydroxyl group and a carboxyl group. Or an amine-based compound (hereinafter sometimes referred to as compound X), the functional group capable of reacting with the hydroxyl group is reacted with a hydroxyl group on the surface of the solder. A covalent bond is formed in the above reaction. By reacting the hydroxyl group on the surface of the solder with the functional group capable of reacting with the hydroxyl group in the compound X, it is possible to easily obtain the first conductivity in which the group containing a carboxyl group or an amine group is covalently bonded to the surface of the solder. The particles can also be obtained as first conductive particles having a group containing a carboxyl group or an amine group covalently bonded on the surface of the solder via an ether bond or an ester bond. By reacting the functional group capable of reacting with a hydroxyl group with the hydroxyl group on the surface of the solder, the compound X can be chemically bonded to the surface of the solder in a form of covalent bonding. Examples of the functional group capable of reacting with a hydroxyl group include a hydroxyl group, a carboxyl group, an ester group, and a carbonyl group. Preferred is a hydroxyl group or a carboxyl group. The functional group capable of reacting with a hydroxyl group may be a hydroxyl group or a carboxyl group. Examples of the compound having a functional group capable of reacting with a hydroxyl group include acetopropionic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, and 5-oxohexanoic acid. , 3-hydroxypropionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropanoic acid, 3-phenylisobutyric acid, 4-phenylbutanoic acid, capric acid, dodecanoic acid, tetradecanoic acid, pentadecanoic acid, hexadecanoic acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, Isoleic acid, linoleic acid, (9,12,15) -linolenic acid, nonadecanic acid, arachidic acid, decanedioic acid, and dodecanedioic acid. Preferred is glutaric acid or glycolic acid. The compound having a functional group capable of reacting with a hydroxyl group may be used alone, or two or more kinds may be used in combination. The compound having a functional group capable of reacting with a hydroxyl group is preferably a compound having at least one carboxyl group. The compound X preferably has a flux effect, and the compound X preferably has a flux effect in a state of being bonded to the surface of the solder. The compound with flux function can remove the oxide film on the solder surface and the oxide film on the electrode surface. Carboxyl has a flux effect. Examples of the compound having a flux function include acetic acid, glutaric acid, glycolic acid, succinic acid, 5-oxohexanoic acid, 3-hydroxypropionic acid, 4-aminobutyric acid, and 3-mercaptopropionic acid. Acids, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropanoic acid, 3-phenylisobutyric acid, 4-phenylbutanoic acid, and the like. Preferred is glutaric acid or glycolic acid. These compounds having a flux function may be used alone or in combination of two or more. From the viewpoint of effectively reducing the connection resistance of the connection structure and effectively suppressing the generation of voids, the functional group capable of reacting with a hydroxyl group in the compound X is preferably a hydroxyl group or a carboxyl group. The functional group capable of reacting with a hydroxyl group in the compound X may be a hydroxyl group or a carboxyl group. When the functional group capable of reacting with a hydroxyl group is a carboxyl group, the compound X preferably has at least two carboxyl groups. By reacting a carboxyl group of a part of a compound having at least two carboxyl groups with a hydroxyl group on the surface of the solder, first conductive particles having a group containing a carboxyl group covalently bonded to the surface of the solder can be obtained. The method for producing the first conductive particle includes, for example, a process of using the first conductive particle, mixing the first conductive particle, a compound having a functional group and a carboxyl group capable of reacting with a hydroxyl group, a catalyst, and a solvent. In the method for producing the first conductive particle, the first conductive particle having a group containing a carboxyl group covalently bonded to the surface of the solder can be easily obtained by the above-mentioned mixing process. In the method for producing the first conductive particle, it is preferable that the first conductive particle is used, the first conductive particle, a compound having the functional group and a carboxyl group capable of reacting with a hydroxyl group, and the contact The vehicle and the solvent are mixed and heated. The first conductive particles having a group containing a carboxyl group covalently bonded to the surface of the solder can be more easily obtained by a mixing and heating process. Examples of the solvent include alcohol solvents such as methanol, ethanol, propanol, and butanol, or acetone, methyl ethyl ketone, ethyl acetate, toluene, and xylene. The solvent is preferably an organic solvent, and more preferably toluene. These solvents may be used alone or in combination of two or more. Examples of the catalyst include p-toluenesulfonic acid, benzenesulfonic acid, and 10-camphorsulfonic acid. The catalyst is preferably p-toluenesulfonic acid. These catalysts may be used alone or in combination of two or more. Preferably, heating is performed during the above-mentioned mixing. The heating temperature is preferably 90 ° C or higher, more preferably 100 ° C or higher, and preferably 130 ° C or lower, and more preferably 110 ° C or lower. From the viewpoint of effectively reducing the connection resistance of the connection structure and effectively suppressing the generation of voids, it is preferable that the first conductive particles are obtained through a process in which an isocyanate compound is used to make the isocyanate compound and the hydroxyl group on the surface of the solder. Perform the reaction. A covalent bond is formed in the above reaction. By reacting the hydroxyl group on the surface of the solder with the isocyanate compound, the first conductive particles having the nitrogen atom derived from the isocyanate group covalently bonded to the surface of the solder can be easily obtained. By reacting the isocyanate compound with a hydroxyl group on the surface of the solder, the isocyanate-derived group can be chemically bonded to the surface of the solder in a form of covalent bonding. In addition, the silane coupling agent can be easily reacted with a group derived from an isocyanate group. Since the first conductive particles can be easily obtained, the carboxyl group-containing group is introduced by a reaction using a silane coupling agent having a carboxyl group, or the reaction having a silane coupling agent is used to make a group having at least one carboxyl group. The compound is introduced by reacting with a group derived from a silane coupling agent. The first conductive particles are preferably obtained by reacting the isocyanate compound with a hydroxyl group on the surface of the solder using the isocyanate compound, and then reacting a compound having at least one carboxyl group. From the viewpoint of effectively reducing the connection resistance of the connection structure and effectively suppressing the generation of voids, the compound having at least one carboxyl group preferably has a plurality of carboxyl groups. Examples of the isocyanate compound include diphenylmethane-4,4'-diisocyanate (MDI), hexamethylene diisocyanate (HDI), toluene diisocyanate (TDI), and isophorone diisocyanate (IPDI). . Other isocyanate compounds may be used. After the above isocyanate compound is reacted with the surface of the solder, the residual isocyanate group is allowed to react with the compound having a reactivity with the residual isocyanate group and having a carboxyl group, which can be expressed by the above formula (X). The base introduces the carboxyl group to the surface of the solder. As the isocyanate compound, a compound having an unsaturated double bond and an isocyanate group can also be used. Examples include 2-propenyloxyethyl isocyanate and 2-isocyanatoethyl methacrylate. By reacting the isocyanate group of the compound with the surface of the solder, the compound having a functional group having a reactive group for the remaining unsaturated double bond and having a carboxyl group can be reacted through the above formula (X). The indicated group introduces a carboxyl group to the surface of the solder. Examples of the silane coupling agent include 3-isocyanatopropyltriethoxysilane ("KBE-9007" manufactured by Shin-Etsu Silicones), and 3-isocyanatopropyltrimethoxysilane ( "Y-5187" manufactured by MOMENTIVE). These silane coupling agents may be used alone or in combination of two or more. Examples of the compound having at least one carboxyl group include acetopropionic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-oxohexanoic acid, 3- Hydroxypropionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropanoic acid, 3-phenylisobutyric acid, 4-benzene Butyric acid, capric acid, dodecanoic acid, myristic acid, pentadecanoic acid, hexadecanoic acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, isoleic acid , Linoleic acid, (9,12,15) -linolenic acid, nonadecanic acid, arachidic acid, decanedioic acid, and dodecanedioic acid. Preference is given to glutaric acid, adipic acid or glycolic acid. These compounds having at least one carboxyl group may be used alone or in combination of two or more. By using the isocyanate compound, the isocyanate compound is reacted with the hydroxyl group on the solder surface, and then a part of the carboxyl group of the compound having a plurality of carboxyl groups is reacted with the hydroxyl group on the solder surface, so that the group containing the carboxyl group can be left. In the method for producing the first conductive particle, using the first conductive particle and using an isocyanate compound, the isocyanate compound is reacted with a hydroxyl group on the surface of the solder, and then a compound having at least one carboxyl group is reacted to obtain First conductive particles having a carboxyl group-containing group are bonded to the surface of the solder via the group represented by the formula (X). In the manufacturing method of the said 1st electroconductive particle, the 1st electroconductive particle which the group containing a carboxyl group was introduce | transduced into the surface of a solder can be obtained easily by the said process. As a specific manufacturing method of the said 1st electroconductive particle, the following method is mentioned. The first conductive particles are dispersed in an organic solvent, and a silane coupling agent having an isocyanate group is added. Thereafter, a reaction catalyst of a hydroxyl group and an isocyanate group on the surface of the solder of the first conductive particle is used to covalently bond the silane coupling agent to the surface of the solder. Then, a hydroxyl group is generated by hydrolyzing an alkoxy group of a silicon atom bonded to a silane coupling agent. The carboxyl group of a compound having at least one carboxyl group is reacted with the generated hydroxyl group. Moreover, as a specific manufacturing method of the said 1st electroconductive particle, the following method is mentioned. The first conductive particles are dispersed in an organic solvent, and a compound having an isocyanate group and an unsaturated double bond is added. Thereafter, a covalent bond is formed using a reaction catalyst between a hydroxyl group on the solder surface of the first conductive particle and an isocyanate group. Thereafter, a compound having an unsaturated double bond and a carboxyl group is reacted with the introduced unsaturated double bond. Examples of the reaction catalyst between the hydroxyl group and the isocyanate group on the solder surface of the first conductive particles include tin-based catalysts (such as dibutyltin dilaurate), amine-based catalysts (such as triethylene glycol diamine), and the like. Carboxylic acid ester catalysts (lead naphthenate, potassium acetate, etc.), and trialkylphosphine catalysts (triethylphosphine, etc.). From the viewpoint of effectively reducing the connection resistance of the connection structure and effectively suppressing the generation of voids, the compound having at least one carboxyl group is preferably a compound represented by the following formula (1). The compound represented by the following formula (1) has a flux effect. The compound represented by the following formula (1) has a flux effect in a state where the compound is introduced onto the surface of the solder. [Chemical 2]In the formula (1), X represents a functional group capable of reacting with a hydroxyl group, and R represents a divalent organic group having 1 to 5 carbon atoms. The organic group may include a carbon atom, a hydrogen atom, and an oxygen atom. The organic group may be a divalent hydrocarbon group having 1 to 5 carbon atoms. The main chain of the organic group is preferably a divalent hydrocarbon group. A carboxyl group or a hydroxyl group may be bonded to the divalent hydrocarbon group in the organic group. The compound represented by the formula (1) includes, for example, citric acid. The compound having at least one carboxyl group is preferably a compound represented by the following formula (1A) or the following formula (1B). The compound having at least one carboxyl group is preferably a compound represented by the following formula (1A), and more preferably a compound represented by the following formula (1B). [Chemical 3]In the formula (1A), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (1A) is the same as R in the above formula (1). [Chemical 4]In the formula (1B), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (1B) is the same as R in the above formula (1). It is preferable that a base represented by the following formula (2A) or the following formula (2B) is bonded to the surface of the solder. It is preferable that the base represented by the following formula (2A) is bonded to the surface of the solder, and more preferably the base represented by the following formula (2B) is bonded to the surface of the solder. In addition, in the following formula (2A), the left end portion indicates a bonding site. [Chemical 5]In the formula (2A), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (2A) is the same as R in the above formula (1). In addition, in the following formula (2B), the left end portion indicates a bonding site. [Chemical 6]In the formula (2B), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (2B) is the same as R in the above formula (1). From the viewpoint of improving the wettability of the solder surface, the molecular weight of the compound having at least one carboxyl group is preferably 10,000 or less, more preferably 1,000 or less, and even more preferably 500 or less. The above molecular weight means a molecular weight that can be calculated from the structural formula when the compound having at least one carboxyl group is not a polymer, and when the structural formula of the compound having at least one carboxyl group can be specified. When the compound having at least one carboxyl group is a polymer, it means a weight average molecular weight. In order to effectively improve the cohesiveness of the solder particles during the conductive connection, the first conductive particles preferably have a first conductive particle body and an anionic polymerization disposed on a surface of the first conductive particle body. Thing. The first conductive particles are preferably obtained by subjecting the first conductive particles to a surface treatment with an anionic polymer or a compound that becomes an anionic polymer. The first conductive particles are preferably surface-treated products using an anionic polymer or a compound that becomes an anionic polymer. The anionic polymer and the compound to be used as the anionic polymer may be used alone or in combination of two or more. The anionic polymer is a polymer having an acidic group. Examples of a method for surface-treating the first conductive particle body with an anionic polymer include a method using a (meth) acrylic polymer obtained by copolymerizing (meth) acrylic acid, a dicarboxylic acid and a dicarboxylic acid Polyester polymer synthesized by alcohol and having carboxyl groups at both ends, polymer obtained by intermolecular dehydration condensation reaction of dicarboxylic acid and having carboxyl groups at both ends, synthesized from dicarboxylic acid and diamine and having Polyester polymers having a carboxyl group, and modified polyvinyl alcohols having a carboxyl group ("GOHSENX T" manufactured by Nippon Synthetic Chemical Co., Ltd.) are used as anionic polymers so that the carboxyl group of the anionic polymer and The hydroxyl group reacts. Examples of the anionic part of the anionic polymer include the carboxyl group described above, and other examples include a tosylsulfonyl group (p-H3 CC6 H4 S (= O)2 -), Sulfonic ion group (-SO3 - ), And phosphate ion group (-PO4 - )Wait. In addition, as another method for surface-treating the first conductive particle body by using an anionic polymer, a method may be mentioned in which a functional group having a reaction with a hydroxyl group on the surface of the first conductive particle body is used, and further, it has The compound of a functional group polymerized by addition or condensation reaction polymerizes the compound on the surface of the first conductive particle body. Examples of the functional group that reacts with a hydroxyl group on the surface of the first conductive particle body include a carboxyl group and an isocyanate group. Examples of the functional group that is polymerized by an addition or condensation reaction include a hydroxyl group, a carboxyl group, and an amine. And (meth) acrylfluorenyl. The weight average molecular weight of the anionic polymer is preferably 2,000 or more, more preferably 3,000 or more, and preferably 10,000 or less, and more preferably 8,000 or less. When the weight average molecular weight is equal to or more than the lower limit and equal to or less than the upper limit, a sufficient amount of electric charge and fluxability can be introduced into the surface of the first conductive particles. Thereby, the cohesiveness of the first conductive particles can be effectively improved during the conductive connection, and the oxide film on the electrode surface can be effectively removed during the connection of the connection target member. If the weight-average molecular weight is greater than or equal to the lower limit and less than the upper limit, the anionic polymer can be easily disposed on the surface of the first conductive particle body, and the cohesiveness of the first conductive particle can be effectively improved during the conductive connection. The first conductive particles are arranged on the electrode more efficiently. The above weight average molecular weight indicates a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC). The weight average molecular weight of the polymer obtained by surface-treating the first conductive particle body with a compound that becomes an anionic polymer can be obtained by melting the solder in the first conductive particle and using After the first conductive particles are removed by dilute hydrochloric acid or the like which causes the decomposition of the polymer, the weight average molecular weight of the remaining polymer is measured. Next, a specific example of the first conductive particles will be described with reference to the drawings. 4 is a cross-sectional view showing a first example of first conductive particles that can be used for a conductive material. The first conductive particles 21 shown in FIG. 4 are solder particles. The entire first conductive particles 21 are made of solder. The first conductive particles 21 do not have substrate particles in the core, and are not core-shell particles. Both the central portion of the first conductive particles 21 and the outer surface portion of the conductive portion are formed of solder. FIG. 5 is a cross-sectional view showing a second example of the first conductive particles that can be used for a conductive material. The first conductive particles 31 shown in FIG. 5 include substrate particles 32 and a conductive portion 33 disposed on the surface of the substrate particles 32. The conductive portion 33 covers the surface of the substrate particles 32. The first conductive particles 31 are coated particles whose surface is covered with the conductive portion 33 on the surface of the substrate particles 32. The conductive portion 33 includes a second conductive portion 33A and a solder portion 33B (first conductive portion). The first conductive particles 31 include a second conductive portion 33A between the substrate particles 32 and the solder portion 33B. Therefore, the first conductive particles 31 include base material particles 32, a second conductive portion 33A disposed on the surface of the base particle 32, and a solder portion 33B disposed on an outer surface of the second conductive portion 33A. FIG. 6 is a cross-sectional view showing a third example of the first conductive particles that can be used for a conductive material. As described above, the conductive portion 33 in the first conductive particle 31 has a two-layer structure. The first conductive particle 41 shown in FIG. 6 has a solder portion 42 as a single-layer conductive portion. The first conductive particles 41 include base material particles 32 and solder portions 42 arranged on the surface of the base material particles 32. Examples of the substrate particles include resin particles, inorganic particles other than metal particles, organic-inorganic mixed particles, and metal particles. The substrate particles are preferably substrate particles other than metal, and are preferably resin particles, inorganic particles other than metal particles, or organic-inorganic mixed particles. The substrate particles may be copper particles. The substrate particles may be core-shell particles having a core and a shell arranged on a surface of the core. The core may be an organic core, and the shell may be an inorganic shell. As the resin for forming the resin particles, various organic substances can be preferably used. Examples of the resin for forming the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; polymethacrylic acid Acrylic resins such as methyl ester and polymethyl acrylate; polycarbonate, polyamide, phenol formaldehyde resin, melamine-formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin, benzoguanamine resin, Urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyethylene terephthalate, polyfluorene, polyphenylene ether, polyacetal, polyimide, polyimide, imine, Polyetheretherketone, polyetherfluorene, divinylbenzene polymers, and divinylbenzene copolymers. Examples of the divinylbenzene-based copolymer include a divinylbenzene-styrene copolymer and a divinylbenzene- (meth) acrylate copolymer. Since the hardness of the resin particles can be easily controlled to a preferred range, the resin used to form the resin particles is preferably polymerized by polymerizing one or two or more polymerizable monomers having an ethylenically unsaturated group. Polymer. When the polymerizable monomer having an ethylenically unsaturated group is polymerized to obtain the resin particles, examples of the polymerizable monomer having an ethylenically unsaturated group include non-crosslinkable monomers and crosslinks. The monomer of sex. Examples of the non-crosslinkable monomer include styrene-based monomers such as styrene and α-methylstyrene; carboxyl-containing monomers such as (meth) acrylic acid, maleic acid, and maleic anhydride; ( Methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate (Meth) acrylic acid alkyl ester compounds such as cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, iso (meth) acrylate, etc. ; Oxygen atom (meth) acrylate compounds such as 2-hydroxyethyl (meth) acrylate, glyceryl (meth) acrylate, polyoxyethylene (meth) acrylate, glycidyl (meth) acrylate; Nitrile-containing monomers such as (meth) acrylonitrile; vinyl ether compounds such as methyl vinyl ether, ethyl vinyl ether, and propyl vinyl ether; vinyl acetate, vinyl butyrate, vinyl laurate, vinyl stearate Isoacid vinyl ester compounds; unsaturated hydrocarbons such as ethylene, propylene, isoprene, butadiene; methyl trifluoro (meth) acrylate, pentafluoro (methyl) Acid ethyl ester, vinyl chloride, vinyl fluoride, chlorine halogen-containing monomers such as styrene and the like. Examples of the crosslinkable monomer include tetramethylolmethane tetra (meth) acrylate, tetramethylolmethane tri (meth) acrylate, and tetramethylolmethane di (meth) acrylic acid. Ester, trimethylolpropane tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, glyceryl tri (meth) acrylate, di (meth) acrylic acid Glyceride, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, (poly) tetramethylene glycol di (meth) acrylate, 1,4- Multifunctional (meth) acrylate compounds such as butanediol di (meth) acrylate; triallyl (iso) cyanurate, triallyl trimellitate, divinylbenzene, phthalate diene Silane-containing compounds such as propyl ester, diallyl allylamine, diallyl ether, γ- (meth) propenyloxypropyltrimethoxysilane, trimethoxysilylstyrene, vinyltrimethoxysilane, etc. Monomer and so on. The resin particles can be obtained by polymerizing the polymerizable monomer having an ethylenically unsaturated group by a known method. Examples of the method include a method of performing suspension polymerization in the presence of a radical polymerization initiator, and a method of using a non-crosslinked seed particle to swell the radical polymerization initiator together with a monomer to perform polymerization. Wait. When the above-mentioned substrate particles are inorganic particles or organic-inorganic mixed particles other than metal particles, examples of the inorganic substance used to form the substrate particles include silicon dioxide, aluminum oxide, barium titanate, zirconia, and carbon black. Wait. The inorganic substance is preferably a non-metal. The particles formed from the above-mentioned silicon dioxide are not particularly limited, and examples thereof include particles obtained by hydrolyzing silicides of two or more hydrolyzable alkoxysilyl groups After the crosslinked polymer particles are formed, firing is performed as necessary. Examples of the organic-inorganic mixed particles include organic-inorganic mixed particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin. The organic-inorganic mixed particles are preferably core-shell type organic-inorganic mixed particles having a core and a shell arranged on the surface of the core. The core is preferably an organic core. The shell is preferably an inorganic shell. From the viewpoint of more effectively reducing the connection resistance between the electrodes, the substrate particles are preferably organic-inorganic mixed particles having an organic core and an inorganic shell disposed on the surface of the organic core. As a material of the said organic core, the material of the said resin particle etc. are mentioned. Examples of the material of the inorganic shell include the inorganic materials listed above as the material of the substrate particles. The material of the inorganic shell is preferably silicon dioxide. The inorganic shell is preferably formed by forming a metal alkoxide on the surface of the core by a sol-gel method, and then firing the shell. The metal alkoxide is preferably an alkoxysilane. The inorganic shell is preferably formed from an alkoxysilane. When the substrate particles are metal particles, examples of the metal used to form the metal particles include silver, copper, nickel, silicon, gold, and titanium. When the substrate particles are metal particles, the metal particles are preferably copper particles. However, the substrate particles are preferably non-metal particles. The particle diameter of the substrate particles is preferably 0. 5 μm or more, more preferably 1 μm or more, still more preferably 3 μm or more, and more preferably 100 μm or less, more preferably 60 μm or less, and still more preferably 50 μm or less. If the particle diameter of the substrate particles is greater than or equal to the above lower limit, the contact area between the conductive particles and the electrodes becomes larger, so the reliability of the conduction between the electrodes is further improved, and the distance between the electrodes connected via the conductive particles can be more effectively reduced. Connect the resistor. Furthermore, it is difficult to aggregate when forming a conductive part on the surface of a base material particle, and it is difficult to form aggregated conductive particles. When the particle diameter of the substrate particles is equal to or smaller than the upper limit described above, the conductive particles are easily sufficiently compressed, and the connection resistance between the electrodes connected via the conductive particles can be more effectively reduced. The particle diameter of the substrate particles is particularly preferably 5 μm or more and 40 μm or less. If the particle diameter of the substrate particles is in the range of 5 μm or more and 40 μm or less, the interval between the electrodes can be made smaller, and even if the thickness of the conductive portion is made thicker, smaller conductive particles can be obtained. The particle diameter of the substrate particles indicates a diameter when the substrate particles are truly spherical, and indicates a maximum diameter when the substrate particles are not truly spherical. The particle diameter of the substrate particles indicates a number average particle diameter. The particle size of the substrate particles is determined using a particle size distribution measuring device or the like. The particle diameter of the substrate particles is preferably obtained by observing an arbitrary 50 substrate particles with an electron microscope or an optical microscope, and calculating an average value. When measuring the particle diameter of the said base material particle in electroconductive particle, it can measure it as follows, for example. The content of the conductive particles was added to "Technovit4000" manufactured by Kulzer Corporation so that the content of the conductive particles became 30% by weight, and dispersed to prepare a buried resin for conductive particle inspection. A cross-section of the conductive particles was cut out using an ion polishing apparatus ("IM4000" manufactured by Hitachi High-Technologies Corporation) so that the vicinity of the center of the conductive particles dispersed in the resin for inspection was passed through. Then, using a field emission scanning electron microscope (FE-SEM), the image magnification was set to 25,000 times, 50 conductive particles were randomly selected, and the substrate particles of each conductive particle were observed. The particle diameter of the base material particles in each conductive particle was measured, and the arithmetic mean value was calculated to be the particle diameter of the base material particles. A method of forming a conductive portion on the surface of the substrate particle, and a method of forming a solder portion on the surface of the substrate particle or the surface of the second conductive portion are not particularly limited. Examples of the method for forming the conductive portion and the solder portion include a method using electroless plating, a method using electroplating, a method using physical collision, a method using mechanochemical reaction, and physical vapor deposition or physical adsorption. And a method of applying a metal powder or a paste containing a metal powder and a binder to the surface of the substrate particles. The method of forming the conductive portion and the solder portion is preferably a method using electroless plating, electroplating, or physical collision. Examples of the method using the physical vapor deposition include methods such as vacuum vapor deposition, ion plating, and ion sputtering. In addition, in the above-mentioned method using physical collision, for example, Theta Composer (manufactured by Tokusho Work Co., Ltd.) is used. The melting point of the substrate particles is preferably higher than the melting points of the conductive portion and the solder portion. The melting point of the substrate particles is preferably more than 160 ° C, more preferably more than 300 ° C, even more preferably more than 400 ° C, and even more preferably more than 450 ° C. The melting point of the substrate particles may not reach 400 ° C. The melting point of the substrate particles may be 160 ° C or lower. The softening point of the substrate particles is preferably 260 ° C or higher. The softening point of the substrate particles may not reach 260 ° C. The first conductive particles may have a single-layer solder portion. The first conductive particles may have a plurality of layers of conductive portions (solder portion, second conductive portion). That is, two or more conductive portions may be laminated on the first conductive particles. When the conductive portion is two or more layers, it is preferable that the first conductive particles include solder on an outer surface portion of the conductive portion. The solder is preferably a metal (low melting point metal) having a melting point of 450 ° C or lower. The solder portion is preferably a metal layer (low melting point metal layer) having a melting point of 450 ° C or lower. The low melting point metal layer is a layer containing a low melting point metal. The solder in the first conductive particles is preferably metal particles (low-melting metal particles) having a melting point of 450 ° C. or lower. The low-melting metal particles are particles containing a low-melting metal. The low melting point metal means a metal having a melting point of 450 ° C or lower. The melting point of the low melting point metal is preferably 300 ° C or lower, and more preferably 160 ° C or lower. The solder in the first conductive particles preferably contains tin. 100% by weight of the metal contained in the solder portion and 100% by weight of the metal contained in the solder in the first conductive particle, the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more It is more preferably 70% by weight or more, particularly preferably 90% by weight or more. When the content of tin in the solder in the first conductive particles is greater than or equal to the above lower limit, the conduction reliability between the first conductive particles and the electrode is further improved. Furthermore, the above-mentioned tin content can be measured using a high-frequency inductively coupled plasma emission spectrometer ("ICP-AES" manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer ("EDX-800HS", manufactured by Shimadzu Corporation). ) And so on. When the first conductive particles having the above-mentioned solder are used on the outer surface portion of the conductive portion, the solder melts and joins the electrodes, and the solder conducts between the electrodes. For example, since solder and electrodes are likely to be in surface contact rather than point contact, the connection resistance becomes low. In addition, the use of the first conductive particles having solder on the outer surface portion of the conductive portion improves the bonding strength between the solder and the electrode. As a result, it is more difficult for the solder to peel off from the electrode, and the conduction reliability is effectively improved. The low-melting-point metal constituting the solder portion and the solder particles is not particularly limited. The low melting point metal is preferably tin or an alloy containing tin. Examples of the alloy include tin-silver alloy, tin-copper alloy, tin-silver-copper alloy, tin-bismuth alloy, tin-zinc alloy, and tin-indium alloy. In terms of excellent wettability to the electrode, the above-mentioned low-melting metal is preferably tin, tin-silver alloy, tin-silver-copper alloy, tin-bismuth alloy, and tin-indium alloy. More preferred are tin-bismuth alloys and tin-indium alloys. The material constituting the solder (solder portion) is preferably a filler material having a liquidus of 450 ° C. or lower based on JIS Z3001: soldering term. Examples of the composition of the solder include metal compositions including zinc, gold, silver, lead, copper, tin, bismuth, and indium. A low melting point and lead-free tin-indium system (117 ° C eutectic) or tin-bismuth system (139 ° C eutectic) is preferred. That is, the solder is preferably lead-free, and is preferably solder containing tin and indium, or solder containing tin and bismuth. In order to further improve the bonding strength between the solder and the electrode, the solder in the first conductive particles may further include nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, and manganese. , Chromium, molybdenum, palladium and other metals. From the viewpoint of further improving the bonding strength between the solder and the electrode, the solder in the first conductive particles preferably contains nickel, copper, antimony, aluminum, or zinc. From the viewpoint of further improving the bonding strength between the solder and the electrode in the solder portion or the first conductive particles, the content of these metals used to increase the bonding strength is less than 100% by weight of the solder in the first conductive particles. It is preferably 0. 0001% by weight or more, and preferably 1% by weight or less. The melting point of the second conductive portion is preferably higher than the melting point of the solder portion. The melting point of the second conductive portion is preferably more than 160 ° C, more preferably more than 300 ° C, still more preferably more than 400 ° C, still more preferably more than 450 ° C, even more preferably more than 500 ° C, and most preferably more than 600 ° C. . Since the solder portion has a low melting point, it melts during conductive connection. The second conductive portion is preferably not melted during conductive connection. The first conductive particles are preferably used by melting solder, preferably used by melting the solder portion, and preferably used by melting the solder portion without melting the second conductive portion. Since the melting point of the second conductive portion is higher than the melting point of the solder portion, only the solder portion can be melted without melting the second conductive portion during the conductive connection. The absolute value of the difference between the melting point of the solder portion and the melting point of the second conductive portion exceeds 0 ° C, preferably 5 ° C or more, more preferably 10 ° C or more, still more preferably 30 ° C or more, and even more preferably 50 ° C or more. , Preferably 100 ° C or more. The second conductive portion preferably contains a metal. The metal constituting the second conductive portion is not particularly limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium, and cadmium, and alloys thereof. Also, as the metal, tin-doped indium oxide (ITO) may be used. These metals may be used alone or in combination of two or more. The second conductive portion is preferably a nickel layer, a palladium layer, a copper layer, or a gold layer, more preferably a nickel layer or a gold layer, and even more preferably a copper layer. The first conductive particles preferably have a nickel layer, a palladium layer, a copper layer, or a gold layer, more preferably have a nickel layer or a gold layer, and even more preferably have a copper layer. By using the first conductive particles having these preferred conductive portions for connection between electrodes, the connection resistance between the electrodes is further reduced. In addition, solder portions can be more easily formed on the surfaces of these preferred conductive portions. The thickness of the solder portion is preferably 0. 005 μm or more, more preferably 0. 01 μm or more, and preferably 10 μm or less, more preferably 1 μm or less, and even more preferably 0. 3 μm or less. When the thickness of the solder portion is greater than or equal to the above lower limit and less than or equal to the above upper limit, sufficient conductivity can be obtained, and the first conductive particles do not become too hard, and the first conductive particles are sufficiently deformed during the connection between the electrodes. The average particle diameter of the first conductive particles is preferably 0. 5 μm or more, more preferably 1 μm or more, still more preferably 3 μm or more, and more preferably 100 μm or less, more preferably 50 μm or less, still more preferably 40 μm or less, and even more preferably 30 μm or less. If the average particle diameter of the first conductive particles is above the lower limit and below the upper limit, the solder in the first conductive particles can be disposed on the electrode more efficiently, and the solder in the first conductive particles can be easily placed. A large number are arranged between the electrodes, and the conduction reliability is further improved. The "average particle diameter" of the first conductive particles indicates a number average particle diameter. The average particle diameter of the first conductive particles is determined, for example, by observing an arbitrary 50 first conductive particles with an electron microscope or an optical microscope, and calculating an average value. The CV (coefficient of variation) value of the particle size of the first conductive particles is preferably 5% or more, more preferably 10% or more, and preferably 40% or less, and more preferably 30% or less. If the CV value of the particle diameter is greater than or equal to the lower limit and less than or equal to the upper limit, the solder can be more efficiently disposed on the electrode. However, the CV value of the particle diameter of the conductive particles may not be higher than 5%. The CV value (coefficient of variation) of the particle diameter of the first conductive particles can be measured as follows. CV value (%) = (ρ / Dn) × 100 ρ: standard deviation of the particle diameter of the first conductive particle Dn: average value of the particle diameter of the first conductive particle The shape of the first conductive particle is not special limited. The shape of the first conductive particles may be a spherical shape or a shape other than a spherical shape such as a flat shape. The acid value of the first conductive particles is preferably 0. 1 mg / KOH or more, more preferably 1 mg / KOH or more, and preferably 10 mg / KOH or less, and more preferably 7 mg / KOH or less. When the said acid value is more than the said lower limit and below the said upper limit, the heat resistance of hardened | cured material will improve further, and the discoloration of hardened | cured material will be suppressed further. The said acid value can be measured as follows. Add phenolphthalein to ethanol and use 0. 1N-KOH was neutralized to obtain a solution of 50 ml, and 1 g of the first conductive particles was added to the solution, and dispersed by ultrasonic treatment, and then 0. 1N-KOH was titrated. Of the 100% by weight of the conductive material, the content of the first conductive particles is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, particularly preferably 20% by weight or more. It is preferably 30% by weight or more, and more preferably 90% by weight or less, more preferably 80% by weight or less, still more preferably 60% by weight or less, and even more preferably 50% by weight or less. If the content of the first conductive particles is above the lower limit and below the upper limit, the solder in the first conductive particles can be disposed on the electrode more efficiently, and the solder in the first conductive particles can be easily disposed in a large amount. Between the electrodes, the conduction reliability is further improved. From the viewpoint of further improving the conduction reliability, the content of the first conductive particles is preferably large. (Second conductive particle) The second conductive particle has silver, ruthenium, iridium, gold, palladium, or platinum (a conductive portion including silver, ruthenium, iridium, gold, palladium, or platinum) on the outer surface portion of the conductive portion. The second conductive particles may be metal particles made of silver, ruthenium, iridium, gold, palladium, or platinum. The metal particles include silver, ruthenium, iridium, gold, palladium, or platinum on an outer surface portion of the conductive portion. The metal particles are particles of silver, ruthenium, iridium, gold, palladium, or platinum on the central portion and the outer surface of the conductive portion. The metal particles do not have substrate particles as core particles. The metal particles are different from conductive particles including a substrate particle and a conductive portion disposed on a surface of the substrate particle. The outer surface portion of the conductive portion and the conductive portion containing silver, ruthenium, iridium, gold, palladium, or platinum include, for example, preferably 80% by weight or more, more preferably 90% by weight or more, and further preferably 95% by weight or more Of silver, ruthenium, iridium, gold, palladium and platinum. The second conductive particle may include a substrate particle and a conductive portion disposed on a surface of the substrate particle. In this case, the second conductive particles include silver, ruthenium, iridium, gold, palladium, or platinum on the outer surface portion of the conductive portion. The outer surface portion of the conductive portion of the second conductive particle has a higher melting point than the outer surface portion of the conductive portion of the first conductive particle. The melting point of the outer surface portion of the conductive portion of the second conductive particle and the conductive portion including silver, ruthenium, iridium, gold, palladium, or platinum is preferably higher than that of the outer surface portion of the conductive portion of the first conductive particle. 50 ° C or higher, preferably 100 ° C or higher. The melting point of the outer surface portion of the conductive portion of the second conductive particle and the conductive portion including silver, ruthenium, iridium, gold, palladium, or platinum is preferably 300 ° C or higher, more preferably 400 ° C or higher, and even more preferably Above 500 ℃. Examples of the substrate particles in the second conductive particles include the same substrate particles as the substrate particles in the first conductive particles. The second conductive particles may be conductive particles obtained by changing the solder in the conductive particles 21 shown in FIG. 4 to silver, ruthenium, iridium, gold, palladium, or platinum. The second conductive particles may be conductive particles obtained by changing the solder of the second conductive portion 33B in the conductive particles 31 shown in FIG. 5 to silver, ruthenium, iridium, gold, palladium, or platinum. The second conductive particles may be conductive particles obtained by changing the solder of the solder portion 42 in the conductive particles 41 shown in FIG. 6 to silver, ruthenium, iridium, gold, palladium, or platinum. The conductive portion containing silver, ruthenium, iridium, gold, palladium, or platinum may include at least one metal selected from the group consisting of silver, ruthenium, iridium, gold, palladium, and platinum. The conductive portion including silver, ruthenium, iridium, gold, palladium, or platinum may also include two or more metals selected from the group consisting of silver, ruthenium, iridium, gold, palladium, and platinum. Among conductive parts including silver, ruthenium, iridium, gold, palladium, or platinum, silver, ruthenium, iridium, gold, palladium, and platinum may also be alloyed. From the viewpoint of more efficiently disposing the solder in the first conductive particles on the electrode, it is preferable that the second conductive particles have silver, gold, palladium, or platinum on the outer surface portion of the conductive portion, and more preferably In order to have silver, gold, or palladium on the outer surface portion of the conductive portion, it is more preferable to have gold or palladium on the outer surface portion of the conductive portion, and it is more preferable to have gold on the outer surface portion of the conductive portion. The thickness of the above-mentioned conductive portion including silver, ruthenium, iridium, gold, palladium, or platinum is preferably 0. 005 μm or more, more preferably 0. 01 μm or more, and preferably 10 μm or less, more preferably 1 μm or less, and even more preferably 0. 3 μm or less. When the thickness of the conductive portion including silver, ruthenium, iridium, gold, palladium, or platinum is at least the above lower limit and at most the above upper limit, sufficient conductivity can be obtained. The average particle diameter of the second conductive particles is preferably 3 μm or more, and preferably 50 μm or less, more preferably 20 μm or less, and even more preferably 10 μm or less. When the second conductive particle is at least the above lower limit and at most the above upper limit, the second conductive particle can more efficiently dispose the solder in the first conductive particle on the electrode. The ratio of the average particle diameter of the first conductive particles to the average particle diameter of the second conductive particles (average particle diameter of the first conductive particles / average particle diameter of the second conductive particles) is preferably 1 or more , More preferably 2 or more, even more preferably 3 or more, and more preferably 4 or less. When the ratio (average particle diameter of the first conductive particles / average particle diameter of the second conductive particles) is equal to or more than the lower limit and equal to or less than the upper limit, the first conductive particles can be more efficiently conducted by the second conductive particles. The solder in the particles is disposed on the electrode. From the viewpoint of efficiently disposing the solder on the electrode, the average particle diameter of the second conductive particles is particularly preferably smaller than the average particle diameter of the first conductive particles. The "average particle diameter" of the second conductive particles indicates a number average particle diameter. The average particle diameter of the second conductive particles is obtained, for example, by observing an arbitrary 50 second conductive particles with an electron microscope or an optical microscope, and calculating an average value. The shape of the second conductive particles is not particularly limited. The shape of the second conductive particles may be a spherical shape or a shape other than a spherical shape such as a flat shape. The content of the second conductive particles in 100% by weight of the conductive material is preferably 1% by weight or more, and more preferably 3% by weight or more. When the content of the second conductive particles is greater than or equal to the above lower limit, the solder in the first conductive particles can be more efficiently arranged on the electrodes by the second conductive particles. The content of the second conductive particles in 100% by weight of the conductive material is preferably 10% by weight or less, and more preferably 5% by weight or less. If the content of the second conductive particles is greater than or equal to the above lower limit, the second conductive particles can more efficiently arrange the solder in the first conductive particles on the electrodes, and the bonding strength of the connection portion can be further improved. . From the viewpoint of efficiently disposing the solder in the first conductive particles on the electrode, the ratio of the content of the first conductive particles to the content of the second conductive particles is preferably 3 on a weight basis. The above is more preferably 10 or more, more preferably 80 or less, and even more preferably 70 or less. (Thermosetting compound) The said thermosetting compound is a compound which can be hardened by heating. Examples of the thermosetting compound include an oxetane compound, an epoxy compound, an episulfide compound, a (meth) acrylic compound, a phenol compound, an amino compound, an unsaturated polyester compound, and a polyurethane. Compounds, polysiloxanes and polyimide compounds. From the viewpoint of making the conductive material harder and viscosity better and further improving connection reliability, an epoxy compound or an episulfide compound is preferred. These thermosetting compounds may be used alone or in combination of two or more. From the viewpoint of more effectively disposing the solder on the electrode, it is preferable that the thermosetting compound includes a thermosetting compound having a polyether skeleton. Examples of the thermosetting compound having a polyether skeleton include a compound having a glycidyl ether group at both ends of an alkyl chain having a carbon number of 3 to 12, and a polyether skeleton having a carbon number of 2 to 4 and 2 to Ten polyether-type epoxy compounds and the like which are structural units in which the polyether skeleton is continuously bonded. From the viewpoint of effectively improving the heat resistance of the cured product and from the viewpoint of effectively reducing the dielectric constant of the cured product, it is preferable that the thermosetting compound includes a thermosetting compound having a tri- 𠯤 skeleton. Examples of the above-mentioned thermosetting compound having a triple skeleton include tris (glycidyl ether), and TEPIC Series (TEPIC-G, TEPIC-S, TEPIC-SS, manufactured by Nissan Chemical Industries, Ltd.). , TEPIC-HP, TEPIC-L, TEPIC-PAS, TEPIC-VL, TEPIC-UC). Examples of the epoxy compound include an aromatic epoxy compound. Crystalline epoxy compounds such as a resorcinol-type epoxy compound, a naphthalene-type epoxy compound, a biphenyl-type epoxy compound, and a benzophenone-type epoxy compound are preferred. An epoxy compound which is solid at normal temperature (23 ° C) and has a melting temperature below the melting point of the solder is preferred. The melting temperature is preferably 100 ° C or lower, more preferably 80 ° C or lower, and more preferably 40 ° C or higher. By using the above-mentioned preferred epoxy compound, the viscosity is high in the stage of bonding the connection target members, and when acceleration is applied due to the impact of transportation or the like, the first connection target member and the second connection target member can be suppressed. The position is shifted, and the viscosity of the conductive material can be greatly reduced by the heat during hardening, and the condensation of the solder can be performed efficiently. From the viewpoint of more efficiently disposing the solder on the electrode, the thermosetting compound is preferably a thermosetting compound that is liquid at 25 ° C. The content of the thermosetting compound in 100% by weight of the conductive material is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and more preferably 99% by weight or less, more It is preferably 98% by weight or less, more preferably 90% by weight or less, and even more preferably 80% by weight or less. If the content of the thermosetting compound is greater than or equal to the above lower limit and less than or equal to the above upper limit, the solder in the conductive particles can be disposed on the electrodes more efficiently, the positional displacement between the electrodes can be further suppressed, and the inter-electrode can be further improved The conduction reliability. From the viewpoint of further improving the impact resistance, the content of the thermosetting compound is preferably large. (Thermosetting agent) The thermosetting agent thermally hardens the thermosetting compound. Examples of the thermal curing agent include an imidazole curing agent, a phenol curing agent, a thiol curing agent, an amine curing agent, an acid anhydride curing agent, a thermal cation initiator, and a thermal radical generator. The said thermosetting agent may be used only 1 type, and may use 2 or more types together. The imidazole curing agent is not particularly limited, and examples thereof include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2- Phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-mesantriol 𠯤 and 2,4-di Amino-6- [2'-methylimidazolyl- (1 ')]-ethyl-trisene 𠯤 isotricyanic acid adducts and the like. The thiol curing agent is not particularly limited, and examples thereof include trimethylolpropane tri-3-mercaptopropionate, pentaerythritol tetra-3-mercaptopropionate, and dipentaerythritol hexa-3-mercaptopropionate. The solubility parameter of the above thiol hardener is preferably 9. 5 or more, and preferably 12 or less. The above solubility parameters are calculated by the Fedors method. For example, trimethylolpropane tri-3-mercaptopropionate has a solubility parameter of 9. 6, the solubility parameter of dipentaerythritol hexa-3-mercaptopropionate is 11. 4. The amine hardener is not particularly limited, and examples thereof include hexamethylenediamine, octamethylenediamine, decamethylenediamine, 3,9-bis (3-aminopropyl) -2, 4,8,10-four-spiral [5. 5] Undecane, bis (4-aminocyclohexyl) methane, m-phenylenediamine, and diaminodiphenylphosphonium. Examples of the thermal cationic initiator include a fluorene-based cationic curing agent,Based cationic hardeners and fluorene based cationic hardeners. Examples of the fluorene-based cationic hardener include bis (4-thirdbutylphenyl) fluorene hexafluorophosphate and the like. As aboveCation hardener, trimethylTetrafluoroborate, etc. Examples of the fluorene-based cationic hardener include tri-p-tolyl fluorene hexafluorophosphate and the like. The thermal radical generator is not particularly limited, and examples thereof include an azo compound and an organic peroxide. Examples of the azo compound include azobisisobutyronitrile (AIBN) and the like. Examples of the organic peroxide include di-third butyl peroxide and methyl ethyl ketone peroxide. The reaction start temperature of the above-mentioned thermosetting agent is preferably 50 ° C or higher, more preferably 70 ° C or higher, even more preferably 80 ° C or higher, and more preferably 250 ° C or lower, more preferably 200 ° C or lower, and even more preferably 150 ° C. The temperature is below 140 ° C, particularly preferably below 140 ° C. When the reaction start temperature of the thermosetting agent is equal to or higher than the lower limit and equal to or lower than the upper limit, the first conductive particles can be disposed on the electrode more efficiently. The reaction start temperature of the thermosetting agent is particularly preferably 80 ° C or higher and 140 ° C or lower. From the viewpoint of more efficiently disposing the solder on the electrode, the reaction starting temperature of the thermal hardener is preferably higher than the melting point of the solder in the first conductive particles, more preferably 5 ° C or higher, and It is preferably 10 ° C or higher. The reaction start temperature of the above-mentioned thermosetting agent means the temperature at which the rise of the exothermic peak in DSC (Differential Scanning Calorimetry) is started. The content of the thermosetting agent is not particularly limited. Relative to 100 parts by weight of the entire thermosetting compound, the content of the thermosetting agent is preferably 0. 01 parts by weight or more, more preferably 1 part by weight or more, and preferably 200 parts by weight or less, more preferably 100 parts by weight or less, and still more preferably 75 parts by weight or less. When the content of the thermosetting agent is at least the above-mentioned lower limit, it is easy to sufficiently harden the conductive material. If the content of the heat curing agent is equal to or less than the above-mentioned upper limit, the remaining heat curing agent that does not participate in hardening does not easily remain after curing, and the heat resistance of the cured product is further improved. (Flux) The conductive material preferably contains a flux. By using the flux, the solder can be more efficiently placed on the electrode. The flux is not particularly limited. As the flux, a flux generally used for soldering or the like can be used. Examples of the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and Rosin, etc. These fluxes may be used alone, or two or more of them may be used in combination. Examples of the molten salt include ammonium chloride. Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid. Examples of the turpentine include active turpentine and inactive turpentine. The above-mentioned flux is preferably an organic acid or rosin having two or more carboxyl groups. The above-mentioned flux may be an organic acid having two or more carboxyl groups, or may be rosin. With the use of organic acids and rosin having two or more carboxyl groups, the reliability of conduction between the electrodes is further improved. The rosin is a rosin containing rosin acid as a main component. The flux is preferably rosin, and more preferably rosin acid. With the use of the better flux, the reliability of the conduction between the electrodes is further improved. The activity temperature (melting point) of the above flux is preferably 50 ° C or higher, more preferably 70 ° C or higher, even more preferably 80 ° C or higher, and more preferably 200 ° C or lower, more preferably 190 ° C or lower, and even more preferably 160. ℃ or lower, more preferably 150 ℃ or lower, and even more preferably 140 ℃ or lower. When the active temperature of the flux is above the lower limit and below the upper limit, the flux effect can be more effectively exerted, and the first conductive particles can be disposed on the electrode more efficiently. The activity temperature (melting point) of the flux is preferably 80 ° C or higher and 190 ° C or lower. The activity temperature (melting point) of the above-mentioned flux is particularly preferably 80 ° C or higher and 140 ° C or lower. Examples of the flux whose activity temperature (melting point) of the flux is 80 ° C or higher and 190 ° C or lower include succinic acid (melting point 186 ° C), glutaric acid (melting point 96 ° C), adipic acid (melting point 152 ° C), Dicarboxylic acids such as pimelic acid (melting point: 104 ° C), suberic acid (melting point: 142 ° C), benzoic acid (melting point: 122 ° C), malic acid (melting point: 130 ° C), and the like. The boiling point of the flux is preferably 200 ° C or lower. From the viewpoint of more efficiently disposing the solder on the electrode, the melting point of the flux is preferably higher than the melting point of the solder in the first conductive particle, more preferably 5 ° C or higher, and even more preferably Above 10 ° C. From the viewpoint of more efficiently disposing the solder on the electrode, the melting point of the above-mentioned flux is preferably higher than the reaction starting temperature of the above-mentioned thermosetting agent, more preferably 5 ° C or higher, and further preferably 10 ° C or higher. the above. The above-mentioned flux may be dispersed in a conductive material or may be adhered to the surface of the first conductive particles. Since the melting point of the flux is higher than the melting point of the solder, the first conductive particles can be efficiently aggregated on the electrode portion. The reason is that when heating is performed at the time of joining, if the electrode formed on the connection target member is compared with the portion of the connection target member around the electrode, the thermal conductivity of the electrode portion is higher than that of the connection target around the electrode. The thermal conductivity of the component part, thereby, the temperature rise of the electrode part is faster. When the melting point of the first conductive particles exceeds the melting point of the first conductive particles, the inside of the first conductive particles melts, but the oxide film formed on the surface has not been removed because the melting point (active temperature) of the flux has not been reached. In this state, since the temperature of the electrode part reaches the melting point (active temperature) of the flux first, the oxide coating on the surface of the first conductive particle that reaches the electrode preferentially is removed, and the first conductive particle can be on the electrode. Wetting and diffusion on the surface. Thereby, the first conductive particles can be efficiently aggregated on the electrode. The above-mentioned flux is preferably a flux that releases cations by heating. By using the flux which releases a cation by heating, the 1st electroconductive particle can be arrange | positioned on an electrode more efficiently. Examples of the flux that releases cations by heating include the above-mentioned thermal cation initiators. 100% by weight of the conductive material, the content of the flux is preferably 0. 5% by weight or more, and preferably 30% by weight or less, and more preferably 25% by weight or less. The conductive material may not include a flux. If the content of the flux is above the above lower limit and below the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and further, the oxide film formed on the surface of the solder and the electrode can be more effectively removed. (Insulating particles) The conductive material preferably contains insulating particles. In the conductive material, the insulating particles may not be adhered to any one of the surface of the first conductive particles and the surface of the second conductive particles. In the conductive material, the insulating particles are preferably separated from the first conductive particles, and the insulating particles are preferably separated from the second conductive particles. By including the above-mentioned insulating particles, the interval between the members to be connected by the hardened material of the conductive material and the interval between the members to be connected by the solder in the first conductive particles can be controlled with high accuracy. . The average particle diameter of the insulating particles is preferably 10 μm or more, more preferably 20 μm or more, still more preferably 25 μm or more, and more preferably 100 μm or less, more preferably 75 μm or less, and even more preferably 50 μm or less. If the average particle diameter of the insulating particles is greater than or equal to the above lower limit and less than or equal to the above upper limit, the interval between the connection target members connected by the hardened material of the conductive material, and the connection by the solder in the first conductive particle. The spacing between connected object components will become more moderate. Examples of the material of the insulating particles include insulating resins and insulating inorganic substances. Specific examples of the insulating resin as the material of the insulating particles include polyolefin compounds, (meth) acrylate polymers, (meth) acrylate copolymers, block polymers, thermoplastic resins, and thermoplastic resins. Crosslinked products, thermosetting resins and water-soluble resins. Examples of the polyolefin compound include polyethylene, ethylene-vinyl acetate copolymer, and ethylene-acrylate copolymer. Examples of the (meth) acrylate polymer include polymethyl (meth) acrylate, polyethyl (meth) acrylate, and polybutyl (meth) acrylate. Examples of the block polymer include polystyrene, a styrene-acrylate copolymer, a styrene-butadiene (styrene-butadiene) type styrene-butadiene block copolymer, and an SBS (styrene -butadiene-styrene, styrene-butadiene-styrene) type styrene-butadiene block copolymer, and hydrides thereof. Examples of the thermoplastic resin include a vinyl polymer and a vinyl copolymer. Examples of the thermosetting resin include epoxy resin, phenol resin, and melamine resin. Examples of the water-soluble resin include polyvinyl alcohol, polyacrylic acid, polyacrylamide, polyvinylpyrrolidone, polyethylene oxide, and methyl cellulose. A water-soluble resin is preferred, and polyvinyl alcohol is more preferred. Specific examples of the insulating inorganic substance as the material of the insulating particles include silicon dioxide and organic-inorganic mixed particles. The particles formed from the above-mentioned silicon dioxide are not particularly limited, and examples thereof include particles obtained by hydrolyzing silicides of two or more hydrolyzable alkoxysilyl groups After the crosslinked polymer particles are formed, firing is performed as necessary. Examples of the organic-inorganic mixed particles include organic-inorganic mixed particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin. 100% by weight of the conductive material, the content of the insulating particles is preferably 0. 1% by weight or more, more preferably 0. 5% by weight or more, and preferably 10% by weight or less, and more preferably 5% by weight or less. The conductive material may not include insulating particles. If the content of the insulating particles is at least the above lower limit and below the above upper limit, the interval between the connection target members connected by the hardened material of the conductive material and the interval between the connection target members connected by the solder will be further increased. Moderate. (Other components) The above-mentioned conductive material may include, for example, fillers, extenders, softeners, plasticizers, polymerization catalysts, hardening catalysts, colorants, antioxidants, heat stabilizers, light stabilizers, and ultraviolet rays as needed. Various additives such as absorbents, lubricants, antistatic agents and flame retardants. (Connection structure and manufacturing method of connection structure) The connection structure of the present invention includes a first connection target member having at least one first electrode on the surface, and a second connection target member having at least one second electrode on the surface. And a connecting portion that connects the first connection target member and the second connection target member. In the connection structure of the present invention, the material of the connection portion is the above-mentioned conductive material. The connection portion is a hardened material of the conductive material. The connection portion is formed of the conductive material. In the connection structure of the present invention, the first electrode and the second electrode are electrically connected through a solder portion of the connection portion. The connection portion includes a hardened portion, a solder portion, and second conductive particles having silver, ruthenium, iridium, gold, palladium, or platinum on an outer surface portion of the conductive portion. In the connection structure, the second conductive particles are arranged in the solder portion. It is preferable that the said 2nd electroconductive particle has gold, palladium, or platinum in the outer surface part of a conductive part. The method for manufacturing the above-mentioned connection structure includes the following process: a process of using the above-mentioned conductive material to arrange the above-mentioned conductive material on the surface of a first connection target member having at least one first electrode on the surface; A process in which the second connection target member of each second electrode is disposed on the surface of the conductive material opposite to the first connection target member side so that the first electrode and the second electrode face each other; and The conductive material is heated to a temperature above the melting point of the solder in the first conductive particles, and the conductive material is used to form a connection portion that connects the first connection target member and the second connection target member, and the connection portion passes through the connection portion. The process of electrically connecting the first electrode and the second electrode by a solder part in the process. The conductive material is preferably heated to a temperature higher than the curing temperature of the thermosetting component or the thermosetting compound. In the obtained connection structure, the above-mentioned second conductive particles were arranged in the solder portion. In the connection structure of the present invention and the method of manufacturing the connection structure, since a specific conductive material is used, the solder in the plurality of first conductive particles is easily gathered on the first electrode by the second conductive particles. With the second electrode, the solder can be efficiently disposed on the electrode (wire). Moreover, it is difficult to dispose a part of the solder in a region (space) where no electrode is formed, and the amount of solder disposed in a region where no electrode is formed can be greatly reduced. Therefore, the conduction reliability between the first electrode and the second electrode can be improved. In addition, it is possible to prevent electrical connection between electrodes that are not connectable in the lateral direction and to improve insulation reliability. Moreover, in order to efficiently arrange the solder in the plurality of first conductive particles on the electrode and greatly reduce the amount of solder disposed in the region where the electrode is not formed, it is preferable to use a conductive paste instead of a conductive film. The thickness of the solder portion between the electrodes is preferably 10 μm or more, more preferably 20 μm or more, and preferably 100 μm or less, and more preferably 80 μm or less. Solder wetted area on the surface of the electrode (area of solder contact in 100% of the exposed area of the electrode) is exposed relative to the first electrode before the connection portion is formed and the second electrode electrically connected to the first electrode The area of 100% of the contact area of the solder portion after forming the connection portion is preferably 50% or more, more preferably 70% or more, and preferably 100% or less. The average particle diameter of the second conductive particles may be equal to or less than the thickness of the solder portion between the electrodes, or may not be greater than the thickness of the solder portion between the electrodes, or may be less than 1/2 of the thickness of the solder portion between the electrodes. It may also be 1/3 or less of the thickness of the solder portion between the electrodes. Hereinafter, specific embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing a connection structure obtained by using a conductive material according to an embodiment of the present invention. The connection structure 1 shown in FIG. 1 includes a first connection target member 2, a second connection target member 3, and a connection portion 4 that connects the first connection target member 2 and the second connection target member 3. The connection portion 4 is formed of the aforementioned conductive material. In this embodiment, the conductive material includes solder particles as the first conductive particles. The connection portion 4 includes a solder portion 4A in which a plurality of solder particles are aggregated and bonded to each other, a hardened portion 4B formed by thermally curing a thermosetting component, and second conductive particles 11C. The first connection target member 2 has a plurality of first electrodes 2a on a surface (upper surface). The second connection target member 3 has a plurality of second electrodes 3a on the surface (lower surface). The first electrode 2a and the second electrode 3a are electrically connected through the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A. In the connection structure 1, the second conductive particles 11C are arranged in the solder portion 4A. In the connection portion 4, solder is not present in a region (a portion of the hardened portion 4B) different from the solder portion 4A collected between the first electrode 2a and the second electrode 3a. In a region different from the solder portion 4A (the portion of the hardened portion 4B), there is no solder separated from the solder portion 4A. Furthermore, if the amount is small, solder may be present in a region (a portion of the hardened portion 4B) different from the solder portion 4A collected between the first electrode 2a and the second electrode 3a. In the connection portion 4, the second conductive particles 11C are not present in a region other than the solder portion 4A (the portion of the hardened portion 4B) collected between the first electrode 2 a and the second electrode 3 a. In the region of the solder portion 4A (the portion of the hardened portion 4B), there are no second conductive particles 11C separated from the solder portion 4A. In addition, if it is a small amount, the second conductive particles 11C may also be present in a region other than the solder portion 4A (the portion of the hardened portion 4B) collected between the first electrode 2a and the second electrode 3a. As shown in FIG. 1, in the connection structure 1, a plurality of solder particles are gathered between the first electrode 2a and the second electrode 3a. After the plurality of solder particles are melted, the molten material of the solder particles wets and diffuses on the surface of the electrode. Post-curing to form the solder portion 4A. Therefore, the connection area between the solder portion 4A and the first electrode 2a, and the solder portion 4A and the second electrode 3a become larger. Therefore, the connection reliability and connection reliability of the connection structure 1 are improved. Furthermore, the flux contained in the conductive material is usually gradually deactivated by heating. Furthermore, in the connection structure 1 shown in FIG. 1, all the solder portions 4A are located in regions facing each other between the first and second electrodes 2 a and 3 a. The connection structure 1X of the modification shown in FIG. 3 is different from the connection structure 1 shown in FIG. 1 only in the connection portion 4X. The connection portion 4X includes a solder portion 4XA and a hardened portion 4XB. Like the connection structure 1X, the solder portion 4XA is mostly located in the area facing the first and second electrodes 2a and 3a, and a part of the solder portion 4XA can also be oriented from the area facing the first and second electrodes 2a and 3a. Stick out on the side. The solder portion 4XA protruding from the side opposite to the first and second electrodes 2a and 3a is a portion of the solder portion 4XA, and is not solder separated from the solder portion 4XA. Furthermore, in this embodiment, although the amount of solder spaced from the solder portion can be reduced, the hardened portion may also have solder spaced from the solder portion. Furthermore, in the connection structure 1X, the second conductive particles 11C are also arranged in the solder portion 4XA. When the amount of solder particles used is reduced, it becomes easy to obtain the connection structure 1. When the amount of solder particles used is increased, it becomes easy to obtain the connection structure 1X. From the viewpoint of further improving the conduction reliability, it is preferable to observe a portion of the first electrode facing the second electrode in a lamination direction of the first electrode, the connection portion, and the second electrode, in The solder portion of the connection portion is disposed at 50% or more (preferably 60% or more, and more preferably 70% or more) of an area of 100% of an area of the first electrode facing the second electrode. From the viewpoint of further improving the conduction reliability, it is preferable that the first electrode and the second electrode are opposed to each other when viewed in a direction orthogonal to the lamination direction of the first electrode, the connection portion, and the second electrode. In the case where the first electrode and the second electrode face each other, at least 60% (preferably 70% or more, more preferably 90% or more, and even more preferably) of the solder portion of the connection portion is arranged. 99% or more). From the viewpoint of further improving the conduction reliability and insulation reliability, the ratio of the number of the second conductive particles arranged in the solder portion to the total number of the second conductive particles in the connection portion is preferably 100%. It is 50% or more, more preferably 80% or more, still more preferably 90% or more, and even more preferably 95% or more. Next, an example of a method for manufacturing the connection structure 1 using the conductive material according to an embodiment of the present invention will be described. First, the first connection target member 2 having the first electrode 2a on the surface (upper surface) is prepared. Next, as shown in FIG. 2 (a), a conductive material 11 (a first Process). The conductive material used includes a thermosetting compound and a thermosetting agent as the thermosetting component 11B. A conductive material 11 is disposed on a surface of the first connection target member 2 on which the first electrode 2a is provided. After the conductive material 11 is disposed, the solder particles 11A are disposed on both the first electrode 2a (line) and the area (space) where the first electrode 2a is not formed. The arrangement method of the conductive material 11 is not particularly limited, and examples thereof include coating using a dispenser, screen printing, and discharging using an inkjet device. Moreover, the second connection target member 3 having the second electrode 3a on the surface (lower surface) is prepared. Next, as shown in FIG. 2 (b), among the conductive material 11 on the surface of the first connection target member 2, a second connection is arranged on the surface of the conductive material 11 opposite to the first connection target member 2 side. Target component 3 (second process). The second connection target member 3 is disposed on the surface of the conductive material 11 from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other. Next, the conductive material 11 is heated above the melting point of the solder particles 11A (third process). The conductive material 11 is preferably heated to a temperature higher than the curing temperature of the thermosetting component 11B (adhesive). During this heating, the solder particles 11A existing in the region where the electrode is not formed are collected between the first electrode 2a and the second electrode 3a (self-aggregation effect). At this time, the second conductive particles 11C existing between the plurality of solder particles 11A attract the solder particles 11A and promote the movement of the solder particles 11A. When a conductive paste is used instead of a conductive film, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. In addition, the solder particles 11A are melted and bonded to each other. The thermosetting component 11B is thermoset. As a result, as shown in FIG. 2 (c), the connection portion 4 that connects the first connection target member 2 and the second connection target member 3 is formed of the conductive material 11. The connection portion 4 is formed by the conductive material 11, a plurality of solder particles 11A are joined to form a solder portion 4A, and the thermosetting component 11B is thermally cured to form a hardened portion 4B. The second conductive particles 11C are arranged and introduced in the solder portion 4A. As long as the solder particles 11A move sufficiently, the solder particles 11A, which are never located between the first electrode 2a and the second electrode 3a, begin to move until the movement of the solder particles 11A to the first electrode 2a and the second electrode 3a ends, and The temperature may not be kept constant. In this embodiment, it is preferable not to pressurize in the said 2nd process and the said 3rd process. In this case, the weight of the second connection target member 3 is applied to the conductive material 11. Therefore, when the connection portion 4 is formed, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. Furthermore, if pressure is applied in at least one of the second process and the third process, the tendency of the solder particles 11A to aggregate between the first electrode 2a and the second electrode 3a is hindered. . Furthermore, in this embodiment, since no pressure is applied, when the second connection target member is superposed on the first connection target member coated with a conductive material, even if the electrode of the first connection target member and the second connection target member are When the alignment of the electrode of the connection target member is shifted so that the first connection target member overlaps with the second connection target member, the offset may be corrected so that the electrode of the first connection target member and the second connection target Component electrode connection (self-aligned effect). The reason is that for the molten solder that self-agglomerates between the electrode of the first connection target member and the electrode of the second connection target member, the When the area where the solder and other components of the conductive material are in contact is minimized, it is stable to energy, so the force that forms the connection structure that is the smallest area, that is, the aligned connection structure, acts. At this time, it is desirable that the conductive material is not hardened and the viscosity of components other than the conductive particles of the conductive material is sufficiently low under the conditions of the temperature and time. In this way, the connection structure 1 shown in FIG. 1 is obtained. The second process and the third process may be performed continuously. Moreover, after performing the said 2nd process, you may carry out the said 3rd process by moving the laminated body of the 1st connection object member 2, the conductive material 11, and the 2nd connection object member 3 obtained to a heating part. In order to perform the heating, the laminated body may be arranged on a heating member, or the laminated body may be arranged in a heated space. The heating temperature in the third process is preferably 140 ° C or higher, more preferably 160 ° C or higher, and more preferably 450 ° C or lower, more preferably 250 ° C or lower, and even more preferably 200 ° C or lower. Examples of the heating method in the third process include a method of heating the entire connection structure to a temperature higher than the melting point of the solder and a temperature higher than the curing temperature of the thermosetting compound using a reflow furnace or an oven, or only to the connection structure locally. A method for heating the connection part of the body. The first and second connection target members are not particularly limited. Specific examples of the first and second connection target members include semiconductor wafers, semiconductor packages, LED (Light Emitting Diode) wafers, electronic components such as LED packages, capacitors, and diodes, And electronic parts such as resin films, printed substrates, flexible printed substrates, flexible flat cables, rigid flexible substrates, glass epoxy substrates, and circuit substrates such as glass substrates. The first and second connection target members are preferably electronic components. Preferably, at least one of the first connection target member and the second connection target member is a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate. The second connection target member is preferably a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate. Resin films, flexible printed circuit boards, flexible flat cables, and rigid flexible substrates have high flexibility and are relatively lightweight. When a conductive film is used for connection of such a connection target member, solder tends to be hardly collected on the electrode. In contrast, by using a conductive paste, even if a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate is used, the solder can be efficiently collected on the electrodes, thereby sufficiently improving the conduction between the electrodes reliability. When a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate is used, compared with a case where other connection target members such as a semiconductor wafer are used, conduction between the electrodes can be obtained more effectively without pressure Improved reliability. Examples of the electrode provided on the connection target member include metal electrodes such as gold electrodes, nickel electrodes, tin electrodes, aluminum electrodes, copper electrodes, molybdenum electrodes, silver electrodes, SUS (Steel Use Stainless) electrodes, and tungsten electrodes. When the connection target member is a flexible printed circuit board, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode. When the connection target member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode. Furthermore, when the above-mentioned electrode is an aluminum electrode, it may be an electrode formed of only aluminum, or an electrode having an aluminum layer on the surface area of the metal oxide layer. Examples of the material of the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, and Ga. Hereinafter, the present invention will be specifically described with examples and comparative examples. The invention is not limited to the following examples. Polymer A: (1) Synthesis of the first reactant of bisphenol F and 1,6-hexanediol diglycidyl ether and bisphenol F-type epoxy resin: Bisphenol F (weight ratio of 2 :: 3: 1 contains 4,4'-methylenebisphenol, 2,4'-methylenebisphenol, and 2,2'-methylenebisphenol) 72 parts by weight of 1,6-hexanediol di 270 parts by weight of glycidyl ether and 30 parts by weight of bisphenol F-type epoxy resin ("EPICLON EXA-830CRP" manufactured by DIC Corporation) were put into a three-necked flask, and the mixture was melted at 100 ° C under a nitrogen stream. Thereafter, tetra-n-butyl bromide hydrazone 0 was added as a catalyst for the addition reaction of hydroxyl and epoxy groups. One part by weight was subjected to an addition polymerization reaction at 130 ° C. for 6 hours under a nitrogen stream to obtain a first reactant. The addition polymerization reaction was confirmed by NMR (Nuclear Magnetic Resonance), and it was confirmed that the first reactant had a hydroxyl group derived from bisphenol F and 1,6-hexanediol diglycidyl ether, and bisphenol in the main chain. Structural unit of epoxy group bonding of F-type epoxy resin, and has epoxy groups at both ends. (2) Synthesis of polymer A: 100 parts by weight of the above-mentioned first reactant was put into a three-necked flask and melted at 120 ° C under a nitrogen stream. Thereafter, 2 parts by weight of "KBE-9007" (3-isocyanatopropyltriethoxysilane) manufactured by Shin-Etsu Silicones was added, and a side chain hydroxyl group and 3-isocyanate as the first reactant were added. Isocyanate reaction catalyst of cyanopropyltriethoxysilane dibutyltin dilaurate 002 parts by weight, and allowed to react for 4 hours at 120 ° C under a nitrogen stream. Thereafter, it was dried under vacuum at 110 ° C for 5 hours to remove unreacted KBE-9007. The reaction of the side chain hydroxyl group of the first reactant with the isocyanate group of 3-isocyanatopropyltriethoxysilane was confirmed by NMR, and it was confirmed that the obtained compound has a bisphenol F derived from bisphenol F in the main chain. Structural unit of epoxy group bonding of hydroxyl group with 1,6-hexanediol diglycidyl ether and bisphenol F epoxy resin, and having epoxy groups at both ends and propyl triethoxy in side chains Silane. Thus, a phenoxy resin (Polymer A) was obtained. Thermosetting compound 1: Resorcinol type epoxy compound, "Epolight TDC-LC" manufactured by Kyoeisha Chemical Co., Ltd., epoxy equivalent 120 g / eq Thermosetting compound 2: Epoxy compound, manufactured by ADEKA Corporation "EP-3300", epoxy equivalent 160 g / eq photopolymerization initiator: fluorenyl phosphine oxide compound, "DAROCUR TPO" manufactured by Ciba Japan, chain transfer agent: pentaerythritol tetrakis (3-mercaptobutyrate), "Karenz MT PE1" latent epoxy thermal hardener manufactured by Showa Denko Corporation: "Fujicure7000" manufactured by T & K TOKA Flux 1: Add 25 parts by weight of glutaric acid and 25 parts by weight of monomethyl glutarate to three mouthpieces The flask was allowed to melt under a nitrogen stream at 80 ° C. Thereafter, 57 parts by weight of benzylamine was added, and the mixture was reacted at 80 ° C. under reduced pressure (4 Torr or less) for 2 hours to obtain flux 1 which is solid at 25 ° C. Insulating particles: average particle diameter 30 μm, CV value 5%, softening point 330 ° C, manufactured by Sekisui Chemical Industry Co., Ltd., divinylbenzene crosslinked particles solder particles 1: p-toluenesulfonic acid used as a catalyst, Sn-3Ag -0. 5Cu solder particles ("ST-5" manufactured by Mitsui Metals Corporation, average particle diameter (median diameter) 30 μm), and citric acid ("citric acid" manufactured by Wako Pure Chemical Industries, Ltd.) in a toluene solvent at 90 ° C The next side was dehydrated and stirred for 8 hours, thereby obtaining solder particles 1 (CV value 20%) having a group containing a carboxyl group covalently bonded to the surface of the solder. Solder particles 2: Weigh Sn-3Ag-0. 5Cu solder particles ("ST-5" manufactured by Mitsui Metals Co., Ltd., average particle diameter (median diameter) 30 μm) 200 g, silane coupling agent with isocyanate group ("KBE-9007" manufactured by Shin-Etsu Silicones) ") 10 g and 70 g of acetone into a three-necked flask. Add dibutyltin dilaurate as a reaction catalyst between the hydroxyl groups on the surface of the solder particles and the isocyanate group while stirring at room temperature. 25 g was heated under stirring in a nitrogen atmosphere at 100 ° C for 2 hours. Then, 50 g of methanol was added, and it heated at 60 degreeC for 1 hour in nitrogen atmosphere with stirring. After that, it was cooled to room temperature, and the solder particles were filtered with a filter paper, and the solvent was removed by vacuum drying at room temperature for 1 hour. The above solder particles were added to a three-necked flask, and 70 g of acetone, 30 g of trimethyl citrate, and monobutyltin oxide 0 as a transesterification catalyst were added. 5 g was allowed to react under stirring in a nitrogen atmosphere at 60 ° C. for 1 hour. Thereby, an ester group of trimethyl citrate is reacted with a silanol group derived from a silane coupling agent by a transesterification reaction, so that they are covalently bonded. Thereafter, 10 g of citric acid was added, and the mixture was allowed to react at 60 ° C. for 1 hour, whereby citric acid was added to the residual methyl ester group of trimethyl citrate which had not reacted with the silanol group. After that, it was cooled to room temperature, and the solder particles were filtered with filter paper. The solder particles were washed with hexane on the filter paper, and unreacted and residual trimethyl citrate attached to the surface of the solder particles by non-covalent bonds. After removing the ester and citric acid, the solvent was removed by vacuum drying at room temperature for 1 hour. After the obtained solder particles are crushed by a ball mill, a screen is selected so as to have a specific CV value. Thus, solder particles 2 (CV value: 20%) were obtained. (CV value of particle diameter of solder particles and conductive particles) The CV value was measured using a laser diffraction type particle size distribution measuring device ("LA-920" manufactured by Horiba, Ltd.). The second conductive particle 1: a gold layer (thickness of 0. 02 μm) conductive particles (average particle size 15 μm) Second conductive particles 2: a palladium layer (thickness of 0. 02 μm) conductive particles (average particle size 15 μm) second conductive particles 3: a platinum layer (thickness 0. 0) is arranged on the surface of the divinylbenzene resin particles 02 μm) conductive particles (average particle size 15 μm) second conductive particles 6: a ruthenium layer (thickness 0. 02 μm) conductive particles (average particle size 15 μm) second conductive particles 7: an iridium layer (thickness of 0. 02 μm) conductive particles (average particle size 15 μm) second conductive particles 4: a gold layer (thickness 0. 02 μm) conductive particles (average particle size 10 μm) second conductive particles 5: a gold layer (thickness 0. 02 μm) conductive particles (average particle size 30 μm) (Examples 1 to 13 and Comparative Examples 1 to 2) (1) Production of conductive materials The following tables were prepared with the blending amounts shown in Tables 1 and 2 below A conductive material (conductive paste) was obtained with the components shown in 1 and 2. (2) Preparation of the connection structure. The upper surface has a copper electrode pattern with an L / S of 45 μm / 45 μm and an electrode length of 3 mm (the thickness of the copper electrode is 12 μm), and a plurality of copper foils are formed on its periphery. Carrier strips of strips of solder pads. Further, a semiconductor device having an electrode having an L / S of 45 μm / 45 μm on the lower surface was prepared. On the upper surface of the long carrier tape, the conductive paste was coated on the copper electrode pattern so that the thickness became 100 μm to form a conductive paste layer. Then, the above-mentioned semiconductor element is mounted using a chip mounter. Furthermore, a solder paste ("M705-GRN360-K2V" manufactured by Senju Metal Industry Co., Ltd.) was applied to the plurality of copper foil pads, and then a 1005 size chip resistor component was mounted on the copper foil pads using a chip mounter. On the coating film. Thereafter, a reflow process is performed in a reflow furnace to obtain a connection structure obtained by connecting the semiconductor element and the chip resistance component with the electrode. (Evaluation) (1) Viscosity (η25) Using an E-type viscometer ("TVE22L" manufactured by Toki Sangyo Co., Ltd.) at 25 ° C and 5 rpm, the viscosity (η25) of the conductive paste was measured. (2) The viscosity of the first conductive particles was measured using STRESSTECH (manufactured by EOLOGICA) under the conditions of 1 rad strain control, 1 Hz frequency, 20 ° C / min heating rate, and 40 ° C to the melting point of the solder. The viscosity (ηmp) of the conductive paste at the melting point. In this measurement, the viscosity at the melting point of the solder is read. (3) Thickness of solder portion The thickness of the solder portion between the upper and lower electrodes was evaluated by observing the cross section of the obtained connection structure. (4) Accuracy of the placement of solder on the electrode 1 When the part of the first electrode, the second electrode, and the second electrode that is opposite to each other is viewed in the layered direction of the obtained connection structure, The ratio X of the area where the solder portion is arranged in 100% of the area of the portion where the first electrode and the second electrode face each other is evaluated. The placement accuracy of the solder on the electrodes was judged on the basis of the following standards. [Criteria for determining the placement accuracy of solder on electrodes 1] ○: ratio X is 70% or more ○: ratio X is 60% or more and less than 70% △: ratio X is 50% or more and less than 60% ×: The proportion X is less than 50%. (5) The placement accuracy of the second conductive particles in the solder part 2 The 100% of the total number of the second conductive particles in the connection part in the obtained connection structure is placed in the solder part The ratio Y of the number of the second conductive particles was evaluated. The precision 2 of the arrangement of the second conductive particles in the solder portion was determined based on the following criteria. [Criteria for judging the arrangement accuracy of the second conductive particles in the solder part 2] ○ ○ ○: the ratio of the number of Y is 95% or more ○ ○: the ratio of the number of Y is 90% or more and less than 95% ○: number Number ratio Y is 80% or more and less than 90% △: Number ratio Y is 50% or more and less than 80% ×: Number ratio Y is less than 50% (6) Reliability of conduction between upper and lower electrodes In the obtained connection structure (n = 15), the connection resistance at each connection between the upper and lower electrodes was measured by the four-terminal method, respectively. Calculate the average connection resistance. Furthermore, the connection resistance can be obtained by measuring the voltage at which a certain current flows based on the relationship of voltage = current × resistance. The following criteria were used to determine the conduction reliability. However, even if one of the n = 15 electrodes is not conducting between the upper and lower electrodes, it is determined to be “×”. [Judgment Criteria for Continuity Reliability] ○ ○: The average value of the connection resistance is 50 mΩ or less ○: The average value of the connection resistance exceeds 50 mΩ and 70 mΩ or less △: The average value of the connection resistance exceeds 70 mΩ and 100 mΩ or less ×: The average value of the connection resistance exceeds 100 mΩ or a connection failure occurs (7) Insulation reliability between adjacent electrodes in the horizontal direction In the obtained connection structure (n = 15), at 85 ° C and humidity 85 After leaving it for 100 hours in a% environment, 15 V was applied between the electrodes adjacent in the horizontal direction, and the resistance was measured at 25 places. Insulation reliability was judged by the following criteria. However, even when one of the n = 15 electrodes is connected between electrodes adjacent in the horizontal direction, it is determined as "×". [Judgment Criteria for Insulation Reliability] ○○○: The average value of the connection resistance is 1014 Ω or more ○ ○: The average value of the connection resistance is 108 Above Ω and below 1014 Ω ○: The average value of the connection resistance is 106 Above Ω and below 108 Ω △: The average value of the connection resistance is 105 Above Ω and below 106 Ω ×: The average value of the connection resistance is less than 105 Ω The results are shown in Tables 1 and 2 below. [Table 1] [Table 2]

1‧‧‧連接結構體
1X‧‧‧連接結構體
2‧‧‧第1連接對象構件
2a‧‧‧第1電極
3‧‧‧第2連接對象構件
3a‧‧‧第2電極
4‧‧‧連接部
4A‧‧‧焊料部
4B‧‧‧硬化物部
4X‧‧‧連接部
4XA‧‧‧焊料部
4XB‧‧‧硬化物部
11‧‧‧導電材料
11A‧‧‧焊料粒子(第1導電性粒子)
11B‧‧‧熱硬化性成分
11C‧‧‧第2導電性粒子
21‧‧‧第1導電性粒子(焊料粒子)
31‧‧‧第1導電性粒子
32‧‧‧基材粒子
33‧‧‧導電部(具有焊料之導電部)
33A‧‧‧第2導電部
33B‧‧‧焊料部
41‧‧‧第1導電性粒子
42‧‧‧焊料部
1‧‧‧ connection structure
1X‧‧‧Connection Structure
2‧‧‧The first connection target component
2a‧‧‧The first electrode
3‧‧‧ 2nd connection target component
3a‧‧‧Second electrode
4‧‧‧ Connection Department
4A‧‧‧Solder Department
4B‧‧‧Hardened Materials Division
4X‧‧‧Connecting section
4XA‧‧‧Solder Department
4XB‧‧‧Hardened material department
11‧‧‧ conductive material
11A‧‧‧Solder particles (first conductive particles)
11B‧‧‧thermosetting ingredients
11C‧‧‧Second conductive particles
21‧‧‧The first conductive particle (solder particle)
31‧‧‧ the first conductive particle
32‧‧‧ substrate particles
33‧‧‧Conductive part (conductive part with solder)
33A‧‧‧The second conductive part
33B‧‧‧Solder Department
41‧‧‧ the first conductive particle
42‧‧‧Solder Department

圖1係模式性地表示使用本發明之一實施形態之導電材料而獲得之連接結構體的剖視圖。 圖2(a)~(c)係用以說明使用本發明之一實施形態之導電材料製造連接結構體之方法之一例之各製程的剖視圖。 圖3係表示連接結構體之變化例之剖視圖。 圖4係表示可用於導電材料之第1導電性粒子之第1例的剖視圖。 圖5係表示可用於導電材料之第1導電性粒子之第2例的剖視圖。 圖6係表示可用於導電材料之第1導電性粒子之第3例的剖視圖。FIG. 1 is a cross-sectional view schematically showing a connection structure obtained by using a conductive material according to an embodiment of the present invention. 2 (a) to (c) are cross-sectional views for explaining each process of an example of a method of manufacturing a connection structure using a conductive material according to an embodiment of the present invention. FIG. 3 is a cross-sectional view showing a modified example of the connection structure. 4 is a cross-sectional view showing a first example of first conductive particles that can be used for a conductive material. FIG. 5 is a cross-sectional view showing a second example of the first conductive particles that can be used for a conductive material. FIG. 6 is a cross-sectional view showing a third example of the first conductive particles that can be used for a conductive material.

1‧‧‧連接結構體 1‧‧‧ connection structure

2‧‧‧第1連接對象構件 2‧‧‧The first connection target component

2a‧‧‧第1電極 2a‧‧‧The first electrode

3‧‧‧第2連接對象構件 3‧‧‧ 2nd connection target component

3a‧‧‧第2電極 3a‧‧‧Second electrode

4‧‧‧連接部 4‧‧‧ Connection Department

4A‧‧‧焊料部 4A‧‧‧Solder Department

4B‧‧‧硬化物部 4B‧‧‧Hardened Materials Division

11C‧‧‧第2導電性粒子 11C‧‧‧Second conductive particles

Claims (16)

一種導電材料,其包含: 於導電部之外表面部分具有焊料之複數個第1導電性粒子、 於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑之第2導電性粒子、 熱硬化性化合物、及 熱硬化劑。A conductive material comprising: a plurality of first conductive particles having solder on an outer surface portion of the conductive portion; and a second conductive particle having silver, ruthenium, iridium, gold, palladium, or platinum on the outer surface portion of the conductive portion. , Thermosetting compounds, and thermosetting agents. 如請求項1之導電材料,其中上述第2導電性粒子於導電部之外表面部分具有金、鈀或鉑。The conductive material according to claim 1, wherein the second conductive particle has gold, palladium, or platinum on an outer surface portion of the conductive portion. 如請求項1之導電材料,其中上述第1導電性粒子中之焊料之熔點下之導電材料之黏度為2 Pa・s以上且10 Pa・s以下。For example, the conductive material of claim 1, wherein the viscosity of the conductive material at the melting point of the solder in the first conductive particles is 2 Pa · s or more and 10 Pa · s or less. 如請求項1至3中任一項之導電材料,其中上述第2導電性粒子之平均粒徑小於上述第1導電性粒子之平均粒徑。The conductive material according to any one of claims 1 to 3, wherein the average particle diameter of the second conductive particles is smaller than the average particle diameter of the first conductive particles. 如請求項1至3中任一項之導電材料,其中上述第2導電性粒子之含量為10重量%以下。The conductive material according to any one of claims 1 to 3, wherein the content of the second conductive particles is 10% by weight or less. 如請求項1至3中任一項之導電材料,其中上述第1導電性粒子之含量相對於上述第2導電性粒子之含量的比以重量基準計為3以上且80以下。The conductive material according to any one of claims 1 to 3, wherein the ratio of the content of the first conductive particles to the content of the second conductive particles is 3 or more and 80 or less on a weight basis. 如請求項1至3中任一項之導電材料,其中上述熱硬化性化合物包含於25℃下為液狀之熱硬化性化合物。The conductive material according to any one of claims 1 to 3, wherein the thermosetting compound includes a thermosetting compound that is liquid at 25 ° C. 如請求項1至3中任一項之導電材料,其中上述熱硬化性化合物包含具有聚醚骨架之熱硬化性化合物。The conductive material according to any one of claims 1 to 3, wherein the thermosetting compound includes a thermosetting compound having a polyether skeleton. 如請求項1至3中任一項之導電材料,其包含熔點為50℃以上且190℃以下之助焊劑。The conductive material according to any one of claims 1 to 3, which includes a flux having a melting point of 50 ° C or higher and 190 ° C or lower. 如請求項1至3中任一項之導電材料,其中於上述第1導電性粒子之外表面存在羧基或胺基。The conductive material according to any one of claims 1 to 3, wherein a carboxyl group or an amine group is present on the outer surface of the first conductive particle. 如請求項1至3中任一項之導電材料,其中上述第1導電性粒子係於中心部分及外表面部分具有焊料之焊料粒子。The conductive material according to any one of claims 1 to 3, wherein the first conductive particles are solder particles having solder in a central portion and an outer surface portion. 如請求項1至3中任一項之導電材料,其包含未附著於上述第1導電性粒子之表面及上述第2導電性粒子之表面之任一者的絕緣性粒子。The conductive material according to any one of claims 1 to 3, which includes insulating particles that are not adhered to any of the surface of the first conductive particles and the surface of the second conductive particles. 一種連接結構體,其具備: 於表面具有至少1個第1電極之第1連接對象構件、 於表面具有至少1個第2電極之第2連接對象構件、及 將上述第1連接對象構件與上述第2連接對象構件連接之連接部, 上述連接部之材料係如請求項1至12中任一項之導電材料, 上述連接部具有硬化物部、焊料部、及上述第2導電性粒子, 上述焊料部內配置有上述第2導電性粒子, 上述第1電極與上述第2電極藉由上述連接部中之焊料部而電性連接。A connection structure comprising: a first connection target member having at least one first electrode on a surface; a second connection target member having at least one second electrode on a surface; and the first connection target member and the above. The connection part to which the second connection object member is connected, and the material of the connection part is the conductive material according to any one of claims 1 to 12, the connection part has a hardened part, a solder part, and the second conductive particle, and The second conductive particles are arranged in a solder portion, and the first electrode and the second electrode are electrically connected through a solder portion of the connection portion. 一種連接結構體,其具備: 於表面具有至少1個第1電極之第1連接對象構件、 於表面具有至少1個第2電極之第2連接對象構件、及 將上述第1連接對象構件與上述第2連接對象構件連接之連接部, 上述連接部具有硬化物部、焊料部、及於導電部之外表面部分具有銀、釕、銥、金、鈀或鉑之第2導電性粒子, 上述焊料部內配置有上述第2導電性粒子, 上述第1電極與上述第2電極藉由上述連接部中之焊料部而電性連接。A connection structure comprising: a first connection target member having at least one first electrode on a surface; a second connection target member having at least one second electrode on a surface; and the first connection target member and the above. A connection portion to which a second connection object member is connected, the connection portion having a hardened portion, a solder portion, and second conductive particles having silver, ruthenium, iridium, gold, palladium, or platinum on an outer surface portion of the conductive portion; The second conductive particles are arranged in the portion, and the first electrode and the second electrode are electrically connected through a solder portion of the connection portion. 如請求項14之連接結構體,其中上述第2導電性粒子於導電部之外表面部分具有金、鈀或鉑。The connection structure according to claim 14, wherein the second conductive particle has gold, palladium, or platinum on an outer surface portion of the conductive portion. 如請求項13至15中任一項之連接結構體,其中於沿上述第1電極、上述連接部、及上述第2電極之積層方向觀察上述第1電極與上述第2電極相對向之部分時,於上述第1電極與上述第2電極相對向之部分之面積100%中之50%以上配置有上述連接部中之焊料部。In the connection structure according to any one of claims 13 to 15, when a portion of the first electrode facing the second electrode is viewed in a lamination direction of the first electrode, the connection portion, and the second electrode The solder portion of the connection portion is disposed at 50% or more of an area of 100% of a portion of the first electrode facing the second electrode.
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TWI888492B (en) * 2020-03-02 2025-07-01 日商積水化學工業股份有限公司 Solder paste, metal-coated particles for solder paste, and connection structure

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