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TW201806699A - Compound chemical mechanical polish dresser comprising a based on which support pillars are provided to carry thereon sharp end grinding particles and flat end grinding particles - Google Patents

Compound chemical mechanical polish dresser comprising a based on which support pillars are provided to carry thereon sharp end grinding particles and flat end grinding particles Download PDF

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TW201806699A
TW201806699A TW105126350A TW105126350A TW201806699A TW 201806699 A TW201806699 A TW 201806699A TW 105126350 A TW105126350 A TW 105126350A TW 105126350 A TW105126350 A TW 105126350A TW 201806699 A TW201806699 A TW 201806699A
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chemical mechanical
bonding layer
mechanical polishing
flat
item
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TW105126350A
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TWI602651B (en
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白陽亮
廖懿造
曾周智
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中國砂輪企業股份有限公司
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Abstract

A compound chemical mechanical polish dresser comprises a base, a plurality of first grinder units, and a plurality of second grinder units. The base comprises first and second receiving troughs. The first and second grinder units respectively comprise first support pillars and second support pillars that are respectively fixed in the first and second receiving troughs, first and second bonding layers provided on the first and second support pillars, and sharp end grinding particles mounted on the first bonding layers and flat end grinding particles mounted on the second bonding layers. The sharp end grinding particles have a height that is greater than the flat end grinding particles. Through integrating the sharp end grinding particles and the flat end grinding particles into one unitary base, the compound chemical mechanical polish dresser possesses both properties of glazing removal and roughening.

Description

一種複合式化學機械研磨修整器Composite chemical mechanical grinding and dressing device

本發明為有關一種化學機械研磨修整器,尤指一種兼具去釉化以及粗糙化的複合式化學機械研磨修整器。The invention relates to a chemical mechanical polishing dresser, in particular to a composite chemical mechanical polishing dresser having both deglazing and roughening.

於半導體晶圓製造過程之中,係廣泛使用化學機械研磨(Chemical mechanical polish,簡稱CMP)製程對晶圓進行研磨,令晶圓表面達平坦化。常見的化學機械研磨製程為使用一固定在一旋轉台的研磨墊(或拋光墊),接觸並施力於一承載在一可自旋之載具上的晶圓,於研磨時,該載具與該旋轉台將進行轉動且提供一研磨漿料至該研磨墊。一般而言,由於壓力與速度的移動(Preston equation),研磨墊上的研磨高點將產生高溫釉化(Glazing)現象,且研磨所造成的碎屑將累積在研磨墊中的孔洞,導致其對於晶圓的研磨效果下降,因此,需要使用一修整器(Conditioner)移除研磨墊上之釉化點以及殘留的碎屑。During the semiconductor wafer manufacturing process, a chemical mechanical polish (CMP) process is widely used to polish the wafer to flatten the surface of the wafer. A common chemical mechanical polishing process uses a polishing pad (or polishing pad) fixed on a rotary table to contact and apply force to a wafer carried on a spinable carrier. During polishing, the carrier And the rotary table will rotate and provide a polishing slurry to the polishing pad. Generally speaking, due to the movement of pressure and speed (Preston equation), the high point of polishing on the polishing pad will produce high-temperature glazing, and the debris caused by the polishing will accumulate in the holes in the polishing pad, causing it to be difficult to crystallize. The circular grinding effect is reduced. Therefore, a conditioner is required to remove the enamel points and residual debris on the polishing pad.

如本案申請人所提出申請的中華民國發明專利公開第201532734號,提出一種高性能化學機械研磨修整器,包括一基板、一結合層以及複數個研磨顆粒,該結合層係設置於該基板上,該些研磨顆粒係藉由該結合層以直接固定於該基板上,每一研磨顆粒係設置於一金屬固定座上,且該基板具有複數個凹槽或複數個貫穿孔,使該金屬固定座容置於該些凹槽或該些貫穿孔中,且該金屬固定座藉由該結合層以固定於該基板上,其中,該研磨顆粒係經由一表面加工處理,使該研磨顆粒具有特定之切削刃角、晶形結構、尖端高度、及尖端方向性,或者,該研磨顆粒係未經加工處理之研磨顆粒。The Republic of China Invention Patent Publication No. 201532734, filed by the applicant of this case, proposes a high-performance chemical mechanical polishing dresser, which includes a substrate, a bonding layer, and a plurality of abrasive particles. The bonding layer is disposed on the substrate. The abrasive particles are directly fixed on the substrate through the bonding layer. Each abrasive particle is disposed on a metal fixing seat, and the substrate has a plurality of grooves or a plurality of through holes, so that the metal fixing seat The metal particles are contained in the grooves or the through holes, and the metal fixing base is fixed on the substrate by the bonding layer, wherein the abrasive particles are processed through a surface processing to make the abrasive particles have specific properties. The cutting edge angle, crystal structure, tip height, and tip directionality, or the abrasive particles are unprocessed abrasive particles.

又可參中華民國發明專利公開第201143979號,提出一種具有混合修整功能的化學機械拋光墊修整器,其包括一支撐基質、複數個平滑超研磨粒子以及複數個粗糙超研磨粒子,該平滑超研磨粒子係設置在該支撐基質上,該複數平滑超研磨粒子可用於在一拋光墊上切割出大的粗糙部,該粗糙超研磨粒子係設置在該支撐基質上,該複數粗糙超研磨粒子可用於在該複數個大的粗糙部上切割出複數研磨液渠道,其中該複數研磨液渠道係用以在化學機械拋光製程中,促進研磨液的活動遍及於該複數個大的粗糙部。See also the Republic of China Invention Patent Publication No. 201143979, which proposes a chemical mechanical polishing pad dresser with a mixed dressing function, which includes a support matrix, a plurality of smooth superabrasive particles, and a plurality of rough superabrasive particles. A particle system is disposed on the support substrate. The plurality of smooth superabrasive particles can be used to cut a large rough portion on a polishing pad. The rough superabrasive particles are disposed on the support substrate. The plurality of rough superabrasive particles can be used in A plurality of abrasive liquid channels are cut out from the plurality of large rough portions, and the plurality of abrasive liquid channels are used to promote the movement of the abrasive liquid throughout the plurality of large rough portions in the chemical mechanical polishing process.

此外,本案申請人所提出申請的中華民國發明專利申請第104135197號,提出一種混合式化學機械研磨修整器,包括一基座、一第一研磨單元以及複數個第二研磨單元,該第一研磨單元係設置於該基座上,且包括固定於該基座上的一第一結合層、設置於該第一結合層上的一研磨單元基板以及設置於該研磨單元基板上的一研磨層,該研磨層係利用化學氣相沉積法所形成的一鑽石鍍膜,且該鑽石鍍膜表面具有複數個研磨尖端,該第二研磨單元係設置於該基座上,且包括固定於該基座上的一第二結合層、設置於該第二結合層上的一承載柱、設置於該承載柱上的一研磨顆粒以及設置於該承載柱和該研磨顆粒之間的一磨料結合層。In addition, the Republic of China Invention Patent Application No. 104135197 filed by the applicant of this case proposes a hybrid chemical mechanical polishing dresser including a base, a first polishing unit, and a plurality of second polishing units. The unit is disposed on the base, and includes a first bonding layer fixed on the base, a polishing unit substrate disposed on the first bonding layer, and a polishing layer disposed on the polishing unit substrate. The polishing layer is a diamond coating film formed by a chemical vapor deposition method, and the surface of the diamond coating film has a plurality of polishing tips. The second polishing unit is disposed on the base, and includes a fixed base. A second bonding layer, a bearing column disposed on the second bonding layer, an abrasive particle disposed on the bearing column, and an abrasive bonding layer disposed between the bearing column and the abrasive particle.

於以上先前技術之中,中華民國發明專利公開第201532734號揭示該些研磨顆粒具有特定之切削刃角、晶形結構、尖端高度及尖端方向性,但因研磨顆粒僅有單一態樣,故修整的功能有限。中華民國發明專利公開第201143979號以及申請第104135197號均揭示具有兩種研磨單元的混合式化學機械研磨修整器,然其並未對其中的結構設計有更詳細的定義,故難以達成所主張之兼具去釉化及粗糙化的功效。由以上可知,化學機械研磨修整器之結構設計仍有待改進。In the above prior art, the Republic of China Invention Patent Publication No. 201532734 discloses that these abrasive particles have a specific cutting edge angle, crystal structure, tip height and tip directionality, but the abrasive particles have a single shape, so the Limited functions. The Republic of China Invention Patent Publication No. 201143979 and Application No. 104135197 both disclose a hybrid chemical mechanical polishing dresser with two types of grinding units, but it does not have a more detailed definition of the structure design, so it is difficult to achieve the claimed It has both deglazing and roughening effects. From the above, the structural design of the chemical mechanical polishing dresser still needs to be improved.

本發明的主要目的,在於解決習知化學機械研磨修整器,難以兼具去釉化及粗糙化功能之問題。The main purpose of the present invention is to solve the problem that the conventional chemical mechanical polishing dresser is difficult to have both deglazing and roughening functions.

為達上述目的,本發明提供一種複合式化學機械研磨修整器,針對一拋光墊的一表面進行修整,該複合式化學機械研磨修整器包含一基座、複數個第一研磨單元以及複數個第二研磨單元,該基座包括一第一容置槽以及一第二容置槽,該第一研磨單元包括一固設於該第一容置槽的第一承載柱、一設置於該第一承載柱上的第一結合層以及一設置於該第一結合層上並透過該第一結合層固定於該第一承載柱的尖頭研磨顆粒,該第二研磨單元包括一固設於該第二容置槽的第二承載柱、一設置於該第二承載柱上的第二結合層以及一設置於該第二結合層上並透過該第二結合層固定於該第二承載柱的平頭研磨顆粒,其中,該尖頭研磨顆粒具有一高於該平頭研磨顆粒的高度,該高度係一從該基座的一上表面至該尖頭研磨顆粒的一尖端頂點的距離。To achieve the above object, the present invention provides a composite chemical mechanical polishing dresser for dressing a surface of a polishing pad. The composite chemical mechanical polishing dresser includes a base, a plurality of first polishing units, and a plurality of first polishing units. Two grinding units. The base includes a first receiving groove and a second receiving groove. The first grinding unit includes a first bearing post fixed on the first receiving groove, and a first receiving pole. A first bonding layer on the bearing column and a pointed abrasive particle disposed on the first bonding layer and fixed to the first bearing column through the first bonding layer. The second grinding unit includes a fixing member fixed on the first A second bearing post with two accommodating slots, a second bonding layer disposed on the second bearing post, and a flat head disposed on the second bonding layer and fixed to the second bearing post through the second bonding layer. Abrasive particles, wherein the pointed abrasive particles have a height higher than that of the flat abrasive particles, and the height is a distance from an upper surface of the base to a tip vertex of the pointed abrasive particles.

於一實施例中,該第一研磨單元更包括一設置於該第一容置槽與該第一承載柱之間的第一承載柱結合層,該第一承載柱透過該第一承載柱結合層固定於該第一容置槽。In an embodiment, the first grinding unit further includes a first bearing post bonding layer disposed between the first receiving groove and the first bearing post, and the first bearing post is bonded through the first bearing post. The layer is fixed in the first receiving groove.

於一實施例中,該第一承載柱結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。In one embodiment, the composition of the first supporting pillar bonding layer is selected from the group consisting of ceramic material, brazing material, electroplating material, metal material and polymer material.

於一實施例中,該第二研磨單元更包括一設置於該第二容置槽與該第二承載柱之間的第二承載柱結合層,該第二承載柱透過該第二承載柱結合層固定於該第二容置槽。In an embodiment, the second grinding unit further includes a second bearing post bonding layer disposed between the second receiving groove and the second bearing post, and the second bearing post is combined through the second bearing post. The layer is fixed in the second receiving groove.

於一實施例中,該第二承載柱結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。In one embodiment, the composition of the second supporting pillar bonding layer is selected from the group consisting of ceramic material, brazing material, electroplating material, metal material, and polymer material.

於一實施例中,該基座的材料擇自於不鏽鋼、金屬材料、塑膠材料及陶瓷材料所組成之群組。In one embodiment, the material of the base is selected from the group consisting of stainless steel, metal materials, plastic materials and ceramic materials.

於一實施例中,該第一承載柱及該第二承載柱的材料擇自於不鏽鋼、金屬材料、塑膠材料及陶瓷材料所組成之群組。In one embodiment, the material of the first bearing post and the second bearing post is selected from the group consisting of stainless steel, metal material, plastic material and ceramic material.

於一實施例中,該第一結合層及該第二結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。In one embodiment, the composition of the first bonding layer and the second bonding layer is selected from the group consisting of ceramic materials, brazing materials, electroplating materials, metal materials, and polymer materials.

於一實施例中,該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至200μm之間的高度差。In one embodiment, the tip vertex of the pointed abrasive particles and a flat top mask of the flat abrasive particles have a height difference between 10 μm and 200 μm.

於一實施例中,該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至100μm之間的高度差。In an embodiment, the tip vertex of the pointed abrasive particles and a flat top mask of the flat abrasive particles have a height difference between 10 μm and 100 μm.

於一實施例中,該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至50μm之間的高度差。In one embodiment, the tip vertex of the pointed abrasive particles and a flat top mask of the flat abrasive particles have a height difference between 10 μm and 50 μm.

於一實施例中,該第一研磨單元與該第二研磨單元的數量比例介於1:4至4:1之間。In one embodiment, the number ratio of the first grinding unit to the second grinding unit is between 1: 4 and 4: 1.

於一實施例中,位於該基座上的該平頭研磨顆粒的一平坦頂面具有一介於10000μm2 至160000μm2 之間的面積。A flat planar top surface of the abrasive particles in a first embodiment, positioned on the base having a range between 10000μm 2 to 160000μm 2 area.

於一實施例中,該平頭研磨顆粒的數量為介於10顆至200顆之間。In one embodiment, the number of the flat head abrasive particles is between 10 and 200.

於一實施例中,該平頭研磨顆粒的數量較佳地介於20顆至40顆之間。In one embodiment, the number of the flat head abrasive particles is preferably between 20 and 40.

於一實施例中,該平頭研磨顆粒的形狀為六面體或六-八面體結構。In one embodiment, the shape of the flat head abrasive particles is a hexahedron or a hexa-octahedron structure.

於一實施例中,該平頭研磨顆粒具有一負斜角或一0度角。In one embodiment, the flat head abrasive particles have a negative bevel or a 0 degree angle.

於一實施例中,該負斜角介於0度至-35度之間。In one embodiment, the negative oblique angle is between 0 degrees and -35 degrees.

和上述先前技術相較之下,例如中華民國發明專利公開第201143979號以及申請第104135197號所揭示的混合式拋光墊修整器,本發明的該尖頭研磨顆粒係與該平頭研磨顆粒相距該高度差,而相較於中華民國發明專利公開第201532734號,本發明係將該尖頭研磨顆粒與該平頭研磨顆粒整合於單一該基座上。其中,該平頭研磨顆粒用於提供修整(Truing)和去釉化(Deglazing)之功能,而該尖頭研磨顆粒可提供粗糙化(Roughing)的修整效果,於該拋光墊的表面創造隆起,因此,整體來說將提供優異的修整效果。Compared with the foregoing prior art, for example, the hybrid polishing pad conditioner disclosed in the Republic of China Invention Patent Publication No. 201143979 and Application No. 104135197, the pointed abrasive particles of the present invention are at a distance from the flat abrasive particles. Poor, and compared to the Republic of China Invention Patent Publication No. 201532734, the present invention is to integrate the pointed grinding particles and the flat grinding particles on a single base. Wherein, the flat head abrasive particles are used to provide the functions of Truing and Deglazing, and the sharp head abrasive particles can provide a roughening effect to create a ridge on the surface of the polishing pad. , On the whole will provide excellent trimming effects.

有關本發明的詳細說明及技術內容,現就配合圖式說明如下:The detailed description and technical contents of the present invention are described below with reference to the drawings:

請搭配參閱『圖1』與『圖2』所示,分別為本發明一實施例的俯視示意圖以及『圖1』的A-A方向的側視示意圖,如圖所示,本發明為一種複合式化學機械研磨修整器,包含一基座10、複數個第一研磨單元20以及複數個第二研磨單元30,該基座10包括一第一容置槽11以及一第二容置槽12,於本發明之一實施例中,該基座10的材質為不鏽鋼、金屬材料、塑膠材料、陶瓷材料或上述組合。Please refer to [Figure 1] and [Figure 2] for the top schematic diagram of one embodiment of the present invention and the side schematic diagram of the AA direction of [Figure 1], as shown in the figure, the present invention is a composite chemical The mechanical grinding dresser includes a base 10, a plurality of first grinding units 20, and a plurality of second grinding units 30. The base 10 includes a first receiving groove 11 and a second receiving groove 12. In one embodiment of the invention, the base 10 is made of stainless steel, metal material, plastic material, ceramic material, or a combination thereof.

該第一研磨單元20包括一第一承載柱21、一第一結合層22及一尖頭研磨顆粒23,該第一承載柱21固設於該第一容置槽11上,該第一結合層22設置於該第一承載柱21上,該尖頭研磨顆粒23設置於該第一結合層22上並透過該第一結合層22固定於該第一承載柱21。該第二研磨單元30包括一第二承載柱31、一第二結合層32及一平頭研磨顆粒33,該第二承載柱31固設於該第二容置槽12上,該第二結合層32設置於該第二承載柱31上,該平頭研磨顆粒33設置於該第二結合層32上並透過該第二結合層32固定於該第二承載柱31。於本實施例中,該第一研磨單元20更包括一第一承載柱結合層24,該第一承載柱結合層24設置於該第一容置槽11與該第一承載柱21之間,該第一承載柱21透過該第一承載柱結合層24固定於該第一容置槽11;該第二研磨單元30更包括一第二承載柱結合層34,該第二承載柱結合層34設置於該第二容置槽12與該第二承載柱31之間,該第二承載柱31透過該第二承載柱結合層34固定於該第二容置槽12。The first grinding unit 20 includes a first bearing post 21, a first bonding layer 22, and a sharp-pointed abrasive particle 23. The first bearing post 21 is fixed on the first receiving groove 11. A layer 22 is disposed on the first bearing post 21, and the pointed abrasive particles 23 are disposed on the first joining layer 22 and fixed to the first bearing post 21 through the first joining layer 22. The second grinding unit 30 includes a second bearing post 31, a second bonding layer 32, and a flat-head grinding particle 33. The second bearing post 31 is fixed on the second receiving groove 12. The second bonding layer 32 is disposed on the second bearing column 31, and the flat-head abrasive particles 33 are disposed on the second bonding layer 32 and fixed to the second bearing column 31 through the second bonding layer 32. In this embodiment, the first grinding unit 20 further includes a first load-bearing column bonding layer 24, which is disposed between the first receiving groove 11 and the first load-bearing column 21. The first bearing column 21 is fixed to the first receiving slot 11 through the first bearing column bonding layer 24; the second grinding unit 30 further includes a second bearing column bonding layer 34, and the second bearing column bonding layer 34 It is disposed between the second receiving groove 12 and the second bearing post 31. The second bearing post 31 is fixed to the second receiving groove 12 through the second bearing post bonding layer 34.

於本發明之一實施例中,該平頭研磨顆粒33於該基座10上的數量為介於10顆至200顆之間,於一較佳實施例中,該平頭研磨顆粒33於該基座10上的數量為介於20顆至40顆之間。於本實施例中,該第一研磨單元20與該第二研磨單元30於該基座10上的數量比例為1:4至4:1,且呈一圖案化排列,其中該圖案化排列可為矩陣式排列、放射狀排列或蜂巢狀排列。進一步補充,『圖1』僅為示意之用,並非呈現該平頭研磨顆粒33以及該尖頭研磨顆粒23實際的顆粒數量以及排列方式,其可依實際需求而進行調整顆粒數以及排列方式,不以『圖1』之舉例為限。In one embodiment of the present invention, the number of the flat-head grinding particles 33 on the base 10 is between 10 and 200. In a preferred embodiment, the flat-head grinding particles 33 are on the base. The number on 10 is between 20 and 40. In this embodiment, the number ratio of the first grinding unit 20 and the second grinding unit 30 on the base 10 is 1: 4 to 4: 1, and they are in a patterned arrangement. The patterned arrangement may be It is a matrix arrangement, a radial arrangement or a honeycomb arrangement. It is further added that "Fig. 1" is for illustrative purposes only, and does not show the actual number of particles and arrangement of the flat grinding particles 33 and the pointed grinding particles 23, which can be adjusted according to actual needs. Limited to the example of "Figure 1".

於本發明一實施例中,該第一承載柱21及該第二承載柱31的材質可為不鏽鋼、金屬材料、塑膠材料、陶瓷材料或上述組合。該第一結合層22、該第二結合層32、該第一承載柱結合層24和該第二承載柱結合層34的材料可為陶瓷材料、硬焊材料、電鍍材料、金屬材料或高分子材料,其中,該硬焊材料可為鐵、鈷、鎳、鉻、錳、矽、鋁、硼、碳之金屬或合金,於一實施例中,該硬焊材料可採用Nicrobraz LM之合金,其成分為7 wt.%的Cr,3.1 wt.%的B,4.5 wt.%的Si,3.0 wt.%的Fe,0.06 wt%的C,其餘為Ni。該高分子材料可為環氧樹脂、聚脂樹脂、聚丙烯酸樹脂或酚醛樹脂。於本發明中,該基座10、該第一承載柱21及/或該第二承載柱31較佳地為不鏽鋼材料,但本發明並不以此為限,使用者可依需求而任意變化。該第一承載柱結合層24和該第二承載柱結合層34較佳地為高分子材料,例如,環氧樹脂或壓克力樹脂;該第一結合層22以及該第二結合層32較佳地為硬焊材料或高分子材料。In an embodiment of the present invention, the material of the first load-bearing post 21 and the second load-bearing post 31 may be stainless steel, metal material, plastic material, ceramic material, or a combination thereof. The material of the first bonding layer 22, the second bonding layer 32, the first bearing pillar bonding layer 24, and the second bearing pillar bonding layer 34 may be a ceramic material, a brazing material, a plating material, a metal material, or a polymer. Materials, wherein the brazing material can be a metal or alloy of iron, cobalt, nickel, chromium, manganese, silicon, aluminum, boron, carbon. In one embodiment, the brazing material can be an alloy of Nicrobraz LM. The composition is 7 wt.% Cr, 3.1 wt.% B, 4.5 wt.% Si, 3.0 wt.% Fe, 0.06 wt% C, and the rest are Ni. The polymer material may be an epoxy resin, a polyester resin, a polyacrylic resin, or a phenolic resin. In the present invention, the base 10, the first load-bearing column 21 and / or the second load-bearing column 31 are preferably made of stainless steel, but the invention is not limited thereto, and the user can arbitrarily change according to requirements. . The first load-bearing pillar bonding layer 24 and the second load-bearing pillar bonding layer 34 are preferably polymer materials, for example, epoxy resin or acrylic resin; the first binding layer 22 and the second binding layer 32 are more suitable. It is preferably a brazing material or a polymer material.

於本發明中,該尖頭研磨顆粒23具有一尖端頂點231,該平頭研磨顆粒33具有一平坦頂面331,該尖頭研磨顆粒23具有一高於該平頭研磨顆粒33的高度h,該高度h係一從該基座10的一上表面101至該尖頭研磨顆粒23的該尖端頂點231的距離,該尖端頂點231與該平坦頂面331相距一高度差d。於本發明一實施例中,該平頭研磨顆粒33的該平坦頂面331具有一介於10000μm2 至160000μm2 之間的面積,此處的面積係指位於該基座10上所有的該平頭研磨顆粒33的該平坦頂面331的表面積和。於一實施例中,該高度差d為介於10μm至200μm之間,於一較佳實施例中,該高度差d為介於10μm至100μm之間,於一最佳實施例中,該高度差d為介於10μm至50μm之間。In the present invention, the pointed abrasive particles 23 have a tip vertex 231, the flat abrasive particles 33 have a flat top surface 331, the sharp abrasive particles 23 have a height h higher than the flat abrasive particles 33, h is a distance from an upper surface 101 of the base 10 to the tip vertex 231 of the pointed abrasive particle 23, and the tip vertex 231 and the flat top surface 331 are separated by a height difference d. In one embodiment of the present invention, the flat head of the flat top surface of the abrasive particles having a 33,133 between 10000μm 2 160000μm 2 to the area here means the area of the flat head positioned all abrasive particles 10 on the base The surface area of the flat top surface 331 is 33. In one embodiment, the height difference d is between 10 μm and 200 μm. In a preferred embodiment, the height difference d is between 10 μm and 100 μm. In a preferred embodiment, the height is d. The difference d is between 10 μm and 50 μm.

請繼續參閱『圖3』至『圖6』所示,分別為本發明一實施例中,該尖頭研磨顆粒第一態樣、第二態樣、第三態樣以及第四態樣的示意圖,該尖頭研磨顆粒23的形狀可為八面體,如『圖3』所示,然而,『圖3』形狀的該尖頭研磨顆粒23於實務上較不易取得,因此可選用較易取得之形狀為六-八面體之該尖頭研磨顆粒23,如『圖4』至『圖6』所示,其中第一態樣、第二態樣、第三態樣以及第四態樣的該尖頭研磨顆粒23的V(100)/V(111)分別為1.65、1.30、1.155以及1.00,而α分別為2.85、2.25、2.00以及1.73。以上僅為舉例說明,本發明所指的該尖頭研磨顆粒23應包括任何具有該尖端頂點231的研磨顆粒。請再參『圖7』至『圖10』所示,分別為本發明一實施例中,該平頭研磨顆粒第一態樣、第二態樣、第三態樣及第四態樣的示意圖,該平頭研磨顆粒33的形狀可為六面體,如『圖7』所示,然而,『圖7』形狀的該平頭研磨顆粒33於實務上較不易取得,因此可選用較易取得之形狀為六-八面體的該平頭研磨顆粒33,如『圖8』至『圖10』所示,其中第一態樣、第二態樣、第三態樣以及第四態樣的該平頭研磨顆粒33的V(100)/V(111)分別為0.60、0.70、0.80以及0.87,而α分別為1.04、1.21、1.39以及1.50。於本實施例,『圖2』中的該平頭研磨顆粒33係採用如『圖8』所示形狀為六-八面體的該平頭研磨顆粒33。以上僅為舉例說明,本發明所指的該平頭研磨顆粒33應包括任何具有該平坦頂面331的研磨顆粒。Please continue to refer to "Figure 3" to "Figure 6", which are schematic diagrams of the first aspect, the second aspect, the third aspect, and the fourth aspect of the pointed abrasive particle in an embodiment of the present invention, respectively. The shape of the pointed abrasive particles 23 may be an octahedron, as shown in FIG. 3. However, the pointed abrasive particles 23 of the shape of FIG. 3 are difficult to obtain in practice, so it is easier to obtain them. The sharp-shaped abrasive particles 23 having a shape of hexa-octahedron are as shown in FIG. 4 to FIG. 6, wherein the first aspect, the second aspect, the third aspect, and the fourth aspect are The V (100) / V (111) of the pointed abrasive particles 23 are 1.65, 1.30, 1.155, and 1.00, respectively, and α is 2.85, 2.25, 2.00, and 1.73, respectively. The above is only an example, and the pointed abrasive particles 23 in the present invention should include any abrasive particles having the tip apex 231. Please refer to [FIG. 7] to [FIG. 10] again, which are schematic diagrams of the first aspect, the second aspect, the third aspect, and the fourth aspect of the flat-faced abrasive particle in an embodiment of the present invention. The shape of the flat-faced abrasive particles 33 may be a hexahedron, as shown in FIG. 7. However, the flat-faced abrasive particles 33 in the shape of FIG. 7 are difficult to obtain in practice. The flat-faced abrasive particles 33 of the hexa-octahedron are as shown in FIG. 8 to FIG. 10, wherein the flat-faced abrasive particles of the first aspect, the second aspect, the third aspect, and the fourth aspect are shown in FIG. 8. V (100) / V (111) of 33 is 0.60, 0.70, 0.80, and 0.87, and α is 1.04, 1.21, 1.39, and 1.50, respectively. In this embodiment, the flat-faced abrasive particles 33 in [FIG. 2] are the flat-faced abrasive particles 33 having a shape of hexa-octahedron as shown in [FIG. 8]. The above is just an example. The flat-head abrasive particles 33 referred to in the present invention should include any abrasive particles having the flat top surface 331.

進一步來說,於本發明之一實施例中,該平頭研磨顆粒33具有一負斜角或一0度角,其中該負斜角介於0度至-35度之間。請參閱『圖11』所示,為本發明一實施例中切割角度為負斜角的示意圖,該平頭研磨顆粒33具有一切割面332,該切割面332於一拋光墊40的一表面上進行修整時會形成一切割角度θ,當該切割角度θ大於90度時,即為該負斜角,如『圖11』所示,當該切割角度θ小於90度時,即為一正斜角,當該切割角度θ等於90度時,即為該0度角。Further, in one embodiment of the present invention, the flat-head grinding particles 33 have a negative oblique angle or a 0 degree angle, wherein the negative oblique angle is between 0 degrees and -35 degrees. Please refer to FIG. 11, which is a schematic diagram showing that the cutting angle is a negative oblique angle according to an embodiment of the present invention. The flat-faced abrasive particles 33 have a cutting surface 332, and the cutting surface 332 is performed on a surface of a polishing pad 40. When trimming, a cutting angle θ is formed. When the cutting angle θ is greater than 90 degrees, it is the negative oblique angle. As shown in "Figure 11", when the cutting angle θ is less than 90 degrees, it is a positive oblique angle. When the cutting angle θ is equal to 90 degrees, it is the 0 degree angle.

於實際操作時,半導體製程中需藉由該拋光墊40來對晶圓進行平坦化處理,當該拋光墊40進行多次使用後,該拋光墊40上的刻紋將會逐漸鈍化,且產生碎屑,故需藉由修整器對該拋光墊40進行修整。當使用本發明之該複合式化學機械研磨修整器時,該尖頭研磨顆粒23的該尖端頂點231會與該拋光墊40的該表面接觸而於該表面上產生隆起,而對該拋光墊40造成粗糙化的功能;另一方面,該平頭研磨顆粒33的該平坦頂面331會對該拋光墊40高低不平的部分產生移除的效果,而對該拋光墊40造成去釉化的功能。In actual operation, the wafer needs to be flattened by the polishing pad 40 in the semiconductor manufacturing process. When the polishing pad 40 is used multiple times, the engraving on the polishing pad 40 will gradually passivate and produce Debris, so the polishing pad 40 needs to be trimmed by a trimmer. When the composite chemical mechanical polishing dresser of the present invention is used, the tip apex 231 of the pointed abrasive particles 23 will contact the surface of the polishing pad 40 to generate a bulge on the surface, and the polishing pad 40 The function of causing roughening; on the other hand, the flat top surface 331 of the flat-faced abrasive particles 33 will remove the unevenness of the polishing pad 40 and cause the function of deglazing the polishing pad 40.

綜上所述,本發明相較先前技術的功效為,該尖頭研磨顆粒可提供粗糙化的修整效果,於該拋光墊的該表面創造隆起,該平頭研磨顆粒可提供修整和去釉化的修整功能,使該拋光墊的該表面的碎屑移除,因此,藉由將該尖頭研磨顆粒和該平頭研磨顆粒整合於單一該基座上,使得該複合式化學機械研磨修整器具有優異的修整效果。To sum up, the effect of the present invention compared with the prior art is that the sharp-pointed abrasive particles can provide a roughened dressing effect, create bulges on the surface of the polishing pad, and the flat-headed abrasive particles can provide a trimmed and deglazed surface. The dressing function removes debris from the surface of the polishing pad. Therefore, by integrating the sharp-pointed abrasive particles and the flat-shaped abrasive particles on a single base, the composite chemical mechanical polishing dresser has excellent performance. Trimming effect.

以上已將本發明做一詳細說明,惟以上所述者,僅爲本發明的一較佳實施例而已,當不能限定本發明實施的範圍。即凡依本發明申請範圍所作的均等變化與修飾等,皆應仍屬本發明的專利涵蓋範圍內。The present invention has been described in detail above, but the above is only a preferred embodiment of the present invention, and the scope of implementation of the present invention cannot be limited. That is, all equivalent changes and modifications made in accordance with the scope of the application of the present invention should still fall within the scope of the patent of the present invention.

10‧‧‧基座
101‧‧‧上表面
11‧‧‧第一容置槽
12‧‧‧第二容置槽
20‧‧‧第一研磨單元
21‧‧‧第一承載柱
22‧‧‧第一結合層
23‧‧‧尖頭研磨顆粒
231‧‧‧尖端頂點
24‧‧‧第一承載柱結合層
30‧‧‧第二研磨單元
31‧‧‧第二承載柱
32‧‧‧第二結合層
33‧‧‧平頭研磨顆粒
331‧‧‧平坦頂面
332‧‧‧切割面
34‧‧‧第二承載柱結合層
40‧‧‧拋光墊
h‧‧‧高度
d‧‧‧高度差
θ‧‧‧切割角度
10‧‧‧ base
101‧‧‧ top surface
11‧‧‧ the first receiving tank
12‧‧‧Second accommodation slot
20‧‧‧ the first grinding unit
21‧‧‧ the first bearing column
22‧‧‧The first combined layer
23‧‧‧ pointed abrasive particles
231‧‧‧ Tip Vertex
24‧‧‧ the first bearing column binding layer
30‧‧‧Second grinding unit
31‧‧‧Second loading column
32‧‧‧ the second combination layer
33‧‧‧ flat head abrasive particles
331‧‧‧ flat top surface
332‧‧‧cut surface
34‧‧‧Second loading column binding layer
40‧‧‧Polishing pad
h‧‧‧ height
d‧‧‧height difference θ‧‧‧cut angle

『圖1』,為本發明一實施例的俯視示意圖。 『圖2』,為『圖1』的A-A方向的側視示意圖。 『圖3』,為本發明一實施例中,該尖頭研磨顆粒第一態樣的示意圖。 『圖4』,為本發明一實施例中,該尖頭研磨顆粒第二態樣的示意圖。 『圖5』,為本發明一實施例中,該尖頭研磨顆粒第三態樣的示意圖。 『圖6』,為本發明一實施例中,該尖頭研磨顆粒第四態樣的示意圖。 『圖7』,為本發明一實施例中,該平頭研磨顆粒第一態樣的示意圖。 『圖8』,為本發明一實施例中,該平頭研磨顆粒第二態樣的示意圖。 『圖9』,為本發明一實施例中,該平頭研磨顆粒第三態樣的示意圖。 『圖10』,為本發明一實施例中,該平頭研磨顆粒第四態樣的示意圖。 『圖11』,為本發明一實施例中,切割角度為負斜角的示意圖。[Figure 1] is a schematic top view of an embodiment of the present invention. "Figure 2" is a schematic side view in the direction A-A of "Figure 1". [Figure 3] is a schematic diagram of a first aspect of the pointed abrasive particles in an embodiment of the present invention. [Fig. 4] is a schematic diagram of a second aspect of the pointed abrasive particle in an embodiment of the present invention. [Figure 5] is a schematic diagram of a third aspect of the pointed abrasive particle in an embodiment of the present invention. [Fig. 6] is a schematic diagram of a fourth aspect of the pointed abrasive particles in an embodiment of the present invention. [Fig. 7] is a schematic diagram of a first aspect of the flat-head grinding particle in an embodiment of the present invention. [Fig. 8] is a schematic diagram of a second aspect of the flat-head grinding particle in an embodiment of the present invention. [Fig. 9] is a schematic diagram of a third aspect of the flat-head grinding particle in an embodiment of the present invention. [Fig. 10] is a schematic diagram of a fourth aspect of the flat-head grinding particle in an embodiment of the present invention. [Fig. 11] is a schematic diagram showing that the cutting angle is a negative oblique angle in an embodiment of the present invention.

10‧‧‧基座 10‧‧‧ base

101‧‧‧上表面 101‧‧‧ top surface

11‧‧‧第一容置槽 11‧‧‧ the first receiving tank

12‧‧‧第二容置槽 12‧‧‧Second accommodation slot

20‧‧‧第一研磨單元 20‧‧‧ the first grinding unit

21‧‧‧第一承載柱 21‧‧‧ the first bearing column

22‧‧‧第一結合層 22‧‧‧The first combined layer

23‧‧‧尖頭研磨顆粒 23‧‧‧ pointed abrasive particles

231‧‧‧尖端頂點 231‧‧‧ Tip Vertex

24‧‧‧第一承載柱結合層 24‧‧‧ the first bearing column binding layer

30‧‧‧第二研磨單元 30‧‧‧Second grinding unit

31‧‧‧第二承載柱 31‧‧‧Second loading column

32‧‧‧第二結合層 32‧‧‧ the second combination layer

33‧‧‧平頭研磨顆粒 33‧‧‧ flat head abrasive particles

331‧‧‧平坦頂面 331‧‧‧ flat top surface

34‧‧‧第二承載柱結合層 34‧‧‧Second loading column binding layer

h‧‧‧高度 h‧‧‧ height

d‧‧‧高度差 d‧‧‧height difference

Claims (18)

一種複合式化學機械研磨修整器,針對一拋光墊的一表面進行修整,該複合式化學機械研磨修整器包含: 一基座,包括一第一容置槽以及一第二容置槽; 複數個第一研磨單元,包括一固設於該第一容置槽的第一承載柱、一設置於該第一承載柱上的第一結合層以及一設置於該第一結合層上並透過該第一結合層固定於該第一承載柱的尖頭研磨顆粒;以及 複數個第二研磨單元,包括一固設於該第二容置槽的第二承載柱、一設置於該第二承載柱上的第二結合層以及一設置於該第二結合層上並透過該第二結合層固定於該第二承載柱的平頭研磨顆粒; 其中,該尖頭研磨顆粒具有一高於該平頭研磨顆粒的高度,該高度係一從該基座的一上表面至該尖頭研磨顆粒的一尖端頂點的距離。A composite chemical mechanical polishing dresser is used for dressing a surface of a polishing pad. The composite chemical mechanical polishing dresser includes: a base including a first receiving groove and a second receiving groove; The first grinding unit includes a first bearing post fixed on the first receiving groove, a first bonding layer provided on the first bearing post, and a first bonding layer provided on the first bonding layer and passing through the first A bonding layer is fixed to the pointed abrasive particles of the first bearing column; and a plurality of second grinding units include a second bearing column fixed to the second receiving groove, and a second bearing column. A second bonding layer disposed on the second bonding layer and fixed to the second load-bearing column through the second bonding layer, wherein the pointed grinding particles have a higher height than the flat grinding particles. The height is a distance from an upper surface of the base to a tip vertex of the pointed abrasive particle. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該第一研磨單元更包括一設置於該第一容置槽與該第一承載柱之間的第一承載柱結合層,該第一承載柱透過該第一承載柱結合層固定於該第一容置槽。The composite chemical mechanical polishing dresser according to item 1 of the scope of patent application, wherein the first grinding unit further includes a first bearing column bonding layer disposed between the first receiving groove and the first bearing column. The first bearing post is fixed to the first receiving slot through the first bearing post bonding layer. 如申請專利範圍第2項所述的複合式化學機械研磨修整器,其中該第一承載柱結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。The composite chemical mechanical polishing dresser according to item 2 of the scope of patent application, wherein the composition of the first load-bearing column bonding layer is selected from the group consisting of ceramic materials, brazing materials, electroplating materials, metal materials, and polymer materials Group. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該第二研磨單元更包括一設置於該第二容置槽與該第二承載柱之間的第二承載柱結合層,該第二承載柱透過該第二承載柱結合層固定於該第二容置槽。The composite chemical mechanical polishing dresser according to item 1 of the patent application scope, wherein the second grinding unit further includes a second bearing column bonding layer disposed between the second receiving groove and the second bearing column. The second bearing post is fixed to the second receiving slot through the second bearing post bonding layer. 如申請專利範圍第4項所述的複合式化學機械研磨修整器,其中該第二承載柱結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。The composite chemical mechanical polishing dresser according to item 4 of the scope of patent application, wherein the composition of the second bearing column bonding layer is selected from the group consisting of ceramic materials, brazing materials, electroplating materials, metal materials and polymer materials. Group. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該基座的材質擇自於不鏽鋼、金屬材料、塑膠材料及陶瓷材料所組成之群組。The composite chemical mechanical polishing and dressing device according to item 1 of the scope of the patent application, wherein the material of the base is selected from the group consisting of stainless steel, metal materials, plastic materials and ceramic materials. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該第一承載柱及該第二承載柱的材質擇自於不鏽鋼、金屬材料、塑膠材料及陶瓷材料所組成之群組。The composite chemical mechanical polishing dresser according to item 1 of the scope of patent application, wherein the material of the first load bearing post and the second load bearing post is selected from the group consisting of stainless steel, metal materials, plastic materials and ceramic materials . 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該第一結合層及該第二結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。The composite chemical mechanical polishing dresser according to item 1 of the scope of the patent application, wherein the composition of the first bonding layer and the second bonding layer is selected from ceramic materials, brazing materials, electroplating materials, metal materials and polymers A group of materials. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至200μm之間的高度差。The composite chemical mechanical polishing dresser according to item 1 of the application, wherein the tip vertex of the pointed abrasive particles and a flat top mask of the flat abrasive particles have a height difference between 10 μm and 200 μm. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至100μm之間的高度差。The composite chemical mechanical polishing dresser according to item 1 of the patent application range, wherein the tip vertex of the pointed abrasive particles and a flat top mask of the flat abrasive particles have a height difference between 10 μm and 100 μm. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至50μm之間的高度差。The composite chemical mechanical polishing dresser according to item 1 of the patent application range, wherein the tip vertex of the pointed abrasive particles and a flat top mask of the flat abrasive particles have a height difference between 10 μm and 50 μm. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該第一研磨單元與該第二研磨單元的數量比例介於1:4至4:1之間。The composite chemical mechanical polishing dresser according to item 1 of the scope of the patent application, wherein the number ratio of the first polishing unit to the second polishing unit is between 1: 4 and 4: 1. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中位於該基座上的該平頭研磨顆粒的一平坦頂面具有一介於10000μm2 至160000μm2 之間的面積。The scope of the patent application according to item 1 composite chemical mechanical polishing conditioner, which is located in a flat planar top surface of the head of the abrasive particles on a base having between 10000μm 2 to 160000μm 2 area. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該平頭研磨顆粒的數量為介於10顆至200顆之間。According to the compound chemical mechanical polishing and dressing device described in item 1 of the patent application scope, the number of the flat-headed abrasive particles is between 10 and 200. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該平頭研磨顆粒的數量介於20顆至40顆之間。According to the compound chemical mechanical grinding and dressing device described in item 1 of the patent application scope, the number of the flat-head grinding particles is between 20 and 40. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該平頭研磨顆粒的形狀為六面體或六-八面體結構。The composite chemical mechanical polishing dresser according to item 1 of the scope of the patent application, wherein the shape of the flat-head abrasive particles is a hexahedron or a hexa-octahedron structure. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該平頭研磨顆粒具有一負斜角或一0度角。The composite chemical mechanical polishing dresser according to item 1 of the scope of the patent application, wherein the flat-faced abrasive particles have a negative oblique angle or a 0 degree angle. 如申請專利範圍第17項所述的複合式化學機械研磨修整器,其中該負斜角介於0度至-35度之間。The composite chemical mechanical polishing dresser according to item 17 of the application, wherein the negative oblique angle is between 0 degrees and -35 degrees.
TW105126350A 2016-08-18 2016-08-18 A Compound Chemical Mechanical Dresser TWI602651B (en)

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