TWI546159B - Chemical mechanical polishing conditioner capable of controlling polishing depth - Google Patents

Description

Chemical mechanical polishing dresser capable of controlling grinding depth

The invention relates to a chemical mechanical polishing dresser capable of controlling the grinding depth, in particular to a grinding termination unit and a grinding unit for inserting a chemical vapor deposition diamond film (CVDD) by means of adhesive bonding, which can control the grinding. Deep chemical mechanical polishing dresser.

Chemical Mechanical Polishing (CMP) is a common grinding process in various industries. The surface of various articles can be ground using a chemical polishing process, including ceramic, tantalum, glass, quartz, or metal wafers. In addition, with the rapid development of integrated circuits, chemical mechanical polishing can achieve large-area planarization, so it is one of the common wafer planarization techniques in semiconductor manufacturing.

In the chemical mechanical polishing process of semiconductors, the wafer (or other semiconductor components) is contacted by a polishing pad (Pad), and the polishing liquid is used as needed to pass the chemical reaction and physical mechanical force to remove the wafer. Impurity or uneven structure on the surface; when the polishing pad is used for a certain period of time, The grinding debris generated by the grinding process accumulates on the surface of the polishing pad, causing the polishing effect and the efficiency to be lowered. Therefore, the surface of the polishing pad can be repaired by the conditioner to re-roughen the surface of the polishing pad and maintain it. The best grinding state.

However, in the preparation process of the dresser, the polishing layer formed by mixing the abrasive particles and the bonding layer is required to be disposed on the surface of the substrate, and the polishing layer is fixedly bonded to the surface of the substrate by hardening such as brazing or sintering. Although the above-mentioned correction device is suitable for refurbishing the polishing pad, for a more precise chemical mechanical polishing process, such as a chemical mechanical polishing process with a line width of less than 45 nm, the surface of the polishing pad is too rough, so that the wafer is easily scraped. Injury, local over-drow, sag and uneven thickness. As the linewidth requirements of integrated circuits shrink, the need for wafer surface flatness increases, and the requirements for trimmers increase.

In the prior art, for example, the Republic of China Patent Publication No. I228066 discloses the present invention because it provides a state in which the trimming surface of the dresser for the polishing cloth can be adjusted, even if the shape of the front end of the grindstone particles causes the state of the trimming surface to occur. Poor, still able to create a uniform surface of the polishing cloth, and can apply the polishing property suitable for the workpiece to the polishing cloth dressing device and the dressing method of the polishing cloth used therein, so the above-mentioned dresser is aimed at The polishing cloth dresser 1 having an annular dressing surface 4 is provided on the peripheral portion of the metal table 2, and the first and second rows of the grindstone particles having mutually different grain sizes are alternately arranged side by side on the trimming surface 4. In the second grindstone particles 5 and 6, the metal table 2 is provided with a height difference δ between the reference faces S1 and S2 at which the tip end of the grindstone particles having the largest particle size among the respective grindstone particles 5 and 6 is arbitrarily adjusted. Adjustment mechanism 7 constitutes.

In addition, another known technology of the Republic of China Patent Publication No. 201249595 discloses a polishing pad finisher for a CMP polishing pad comprising a substrate having a first set of protrusions and a second set of protrusions, the first The set of protrusions has a first average height and the second set of protrusions has a second average height, the first average height being different from the second average height, the tops of the protrusions in the first set of protrusions having an uneven surface and the first The tops of the protrusions of the two sets of protrusions have an uneven surface, and the first set of protrusions and the second set of protrusions have a layer of polycrystalline diamond on at least the top surface thereof. The sets of protrusions can be identified, for example, by their height, or by their predetermined position or their base size. The present invention provides various means of measuring the protrusions, including the average height, peak-to-valley height, or bulge height measured from the back of the polishing pad organizer.

However, although the polishing tip of the chemical mechanical polishing dresser of the above-mentioned Republic of China Patent Publication No. I228066 is of a different height, the polishing termination unit is not provided in the prior case, and thus the grinding depth of the workpiece to be polished cannot be controlled. In addition, the substrate and the protruding portion of the chemical mechanical polishing dresser of the Republic of China Patent No. 201249595 are integrally formed, and the thickness is not easily controlled when CVDD is plated, and the composition and technical means for combining the polishing unit on the substrate according to the present invention. Not the same, so the previous case could not accurately control the tip height. Therefore, there is an urgent need to develop a chemical mechanical polishing dresser that can control the depth of grinding. The bonding termination unit and the grinding unit of CVDD are placed by means of adhesive bonding. When the grinding unit penetrates to a certain depth, it is blocked by the grinding termination unit. , can effectively control the depth of the grinding unit piercing the polishing pad.

Most of the pad dresser is made of metal-adhesive diamond particles. The dresser is covered with diamonds. Because the diamonds are different in height, the depth of the diamond will vary depending on the height of the diamond. SUMMARY OF THE INVENTION Accordingly, it is a primary object of the present invention to provide a CMP polishing dresser capable of controlling the depth of grinding by using a combination to fix a small-sized grinding unit to a large-sized base substrate to control the penetration depth of the grinding unit. Therefore, the penetration depth of the grinding unit can be adjusted according to the user's needs or the grinding conditions to achieve a certain cutting ability and uniformity of penetration.

In order to achieve the above object, the present invention provides a chemical mechanical polishing conditioner capable of controlling the depth of polishing, comprising: a bottom substrate; a bonding layer disposed on the bottom substrate; and a plurality of polishing units disposed on the bonding layer, each A polishing unit may have an abrasive layer and a polishing unit substrate, the polishing layer may be formed by a chemical vapor deposition method, and the polishing layer may have a plurality of polishing tips; and a plurality of polishing termination units are disposed on On the bonding layer, the polishing tips of the polishing units may be higher than the polishing termination unit surfaces, and the polishing units and the polishing termination units may have a protruding height, and The height is raised to control the depth of grinding of the workpiece being ground.

In the CMP polishing dresser of the present invention, the polishing unit and the polishing termination units are arranged in an annular manner. Further, the polishing units and the polishing termination units are arranged in an alternating manner. In one aspect of the invention, the polishing unit and the polishing termination units are arranged in an annular manner and in an alternating manner, the arrangement is such that the force is evenly distributed, so that Learn to improve the grinding quality of the mechanical polishing dresser, which in turn increases the life of the dresser.

In the CMP polishing dresser of the present invention, the grinding unit may have a first tip height and a second tip height, so that the grinding units form different tip heights; wherein the first tip height and The height difference of the second tip height may be 5 micrometers to 100 micrometers; in one aspect of the invention, the height difference between the first tip height and the second tip height may be 15 micrometers to 60 micrometers. Furthermore, in the CMP polishing dresser of the present invention, the polishing unit may further include a third tip height or a fourth grinding height; in one aspect of the invention, the third tip The height difference between the height and the fourth tip height is from 25 micrometers to 50 micrometers.

In the CMP polishing dresser of the present invention, wherein the grinding tips of the grinding units are higher than the surface of the polishing termination unit by 5 micrometers to 100 micrometers; in one aspect of the invention, The grinding tips of the grinding units are higher than the surface of the polishing termination unit by 25 to 75 micrometers; in another aspect of the invention, the polishing tips of the polishing units are higher than the The surface of the polishing termination unit is from 30 microns to 60 microns.

In the CMP polishing dresser of the present invention, which can control the depth of the grinding, the grinding units can have the same height, so that the chemical mechanical polishing dresser has a flattened surface.

In the CMP polishing dresser of the present invention, the shape of the grinding tip can be arbitrarily changed according to user requirements or grinding conditions, and the shape of the grinding tip can be blade-shaped, conical, or round. An arc, a cylinder, a pyramid, or a prism, but the invention is not limited thereto; in one aspect of the invention, the grinding tips may be pyramidal, in another aspect of the invention The shape of the grinding tip may be a prismatic shape. In another aspect of the invention, the grinding tips may have a cylindrical shape.

In the CMP polishing dresser of the present invention, the tip orientation, the tip angle or the distance between the tips of the polishing tips can be arbitrarily changed according to user requirements or grinding conditions. In the CMP polishing dresser of the present invention which can control the depth of the grinding, the grinding tips may have the same tip orientation, or the grinding tips may have different tip orientation; in one aspect of the invention The polishing tips may all face the workpiece being polished (ie, the polishing pad) at a vertical angle; in another aspect of the invention, the polishing tips may all face the workpiece being polished at a non-perpendicular angle; In the CMP polishing dresser of the invention for controlling the depth of the grinding, the grinding tips may have the same tip angle, or the grinding tips may have different tip angles; in one aspect of the invention, the grinding The tip angles of the tips may all be 60 degrees, 90 degrees, or 120 degrees; in another aspect of the invention, the tip angles of the grinding tips may be partially 60 degrees, a portion is 90 degrees, and depending on the user. The requirements vary arbitrarily, and the present invention is not limited thereto. In addition, in the CMP polishing dresser of the present invention which can control the depth of the grinding, the grinding tips may have the same pitch, or the grinding tips may have different spacings; in one aspect of the invention, The spacing of the grinding tips may all be 1.5 times, 2 times, 3 times, or more than the outer diameter of the grinding tips. In another aspect of the invention, the spacing of the grinding tips may be partially 2 times the outer diameter of the grinding tips, part For the three times of the outer diameter of the grinding tip, and arbitrarily changing according to the needs of the user, the present invention is not limited thereto.

In the CMP polishing dresser of the present invention, the thickness of the bottom substrate, the polishing units and the polishing termination unit can be arbitrarily changed according to user requirements or polishing conditions. In the non-equal height chemical mechanical polishing dresser of the present invention, the thickness of the bottom substrate may be 10 mm to 200 mm, preferably the thickness of the bottom substrate may be 60 mm to 100 mm, more preferably the bottom substrate. The thickness may be 80 mm; in addition, in the non-equal height chemical mechanical polishing dresser of the present invention, the grinding units may have the same thickness, or the grinding units may have different thicknesses; In a preferred embodiment, the grinding units may have a thickness of 5 mm to 100 mm, preferably the grinding unit may have a thickness of 15 mm to 30 mm, and preferably the grinding unit may have a thickness of 20 mm. In the CMP polishing dresser of the present invention, the polishing termination unit may have the same thickness, or the polishing units may have different thicknesses; in a preferred aspect of the invention, The grinding unit may have a thickness of 5 mm to 100 mm, preferably the grinding unit may have a thickness of 15 mm to 30 mm, and most preferably the grinding unit may have a thickness of 20 mm.

In the CMP polishing dresser capable of controlling the depth of the present invention, the intermediate layer may be interposed between the polishing layer and the polishing unit substrate; and the intermediate layer is used to lift the intermediate layer. a bonding strength between the polishing layer and the polishing unit substrate, wherein the intermediate layer may be at least one selected from the group consisting of alumina, tantalum carbide, and aluminum nitride. In a preferred aspect of the invention, the middle The layer can be composed of tantalum carbide.

In the above-mentioned CMP mechanically controlled dresser capable of controlling the depth of grinding, the method of forming the intermediate layer may be physical vapor deposition, chemical vapor deposition, soldering or brazing, any of the methods known in the art. It can be used, and the invention is not limited thereto.

In the chemical mechanical polishing conditioner of the present invention, the polishing layer may be a single crystal diamond or a polycrystalline diamond; in one aspect of the invention, the polishing layer is composed of a plurality of materials. The crystal diamond has a crystal size of from 5 nm to 50 μm; in another aspect of the invention, the crystal size is from 10 nm to 20 μm. In the CMP polishing dresser of the present invention, the polishing stop layer may be a wear resistant material, for example, a ceramic material or a polymer material; in one aspect of the invention, the grinding The constituent material of the termination layer is a ceramic material and may have a crystal size of 5 nm to 50 μm; in another aspect of the invention, the crystal size is 10 nm to 20 μm.

In the CMP polishing dresser of the present invention which can control the depth of the grinding, the grinding unit substrate requires a surface patterning process to form the tip. In addition, in the CMP polishing dresser capable of controlling the polishing depth of the present invention, the polishing unit substrate may be a conductive substrate or an insulating substrate, wherein the conductive substrate may be formed by electrical discharge machining to form a plurality of surface tips. Patterning the surface, or the insulating substrate may form a pattern surface of the plurality of surface tips by mechanical grinding or laser processing, and then forming the polishing layer on the surface having a plurality of surface tips by chemical vapor deposition Polishing the unit substrate, and having the polishing layer have a plurality of polishing tips, or the surface of the polishing unit substrate is a planarized surface, and then, by chemical vapor deposition The polishing layer is formed on the polishing unit substrate, and the polishing layer has a plurality of polishing tips. In the CMP polishing dresser of the present invention, the composition of the insulating substrate may be a ceramic material or a single crystal material; in one aspect of the invention, the ceramic material may be tantalum carbide, in the present invention. In another aspect of the invention, the single crystal material can be tantalum or aluminum oxide. In the CMP polishing dresser capable of controlling the depth of polishing of the present invention, the conductive substrate may be composed of molybdenum, tungsten, or tungsten carbide. Furthermore, in the CMP polishing dresser of the present invention, the polishing termination unit is composed of a wear resistant material; in one aspect of the invention, the composition of the polishing termination unit It is made of ceramic material or polymer material.

In the CMP polishing dresser capable of controlling the grinding depth of the present invention, the composition of the bonding layer can be arbitrarily changed according to the conditions and requirements of the grinding process, and the composition of the bonding layer can be a ceramic material, a brazing material, a plating material. The metal material or the polymer material is not limited to the present invention. In one aspect of the invention, the bonding layer may be a brazing material, and the brazing material may be at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, and combinations thereof. . In another aspect of the invention, the polymeric material may be an epoxy resin, a polyester resin, a polyacrylic resin, or a phenolic resin.

In addition, in the CMP polishing dresser capable of controlling the polishing depth of the present invention, the material and size of the bottom substrate can be arbitrarily changed according to the conditions and requirements of the polishing process, wherein the material of the bottom substrate can be a stainless steel substrate or a die steel. The substrate, the metal alloy substrate, the ceramic substrate or the plastic substrate or a combination thereof, the present invention is not limited thereto. In a preferred aspect of the invention, the substrate may be made of a stainless steel substrate. Controllable depth of grinding in the present invention In the CMP, the bottom substrate can be a planar substrate or a groove substrate. In one aspect of the invention, the bottom substrate can be a planar substrate. In another aspect of the invention, the bottom substrate can be It is a grooved substrate.

Therefore, the effect of the present invention is to use the adhesive combination method to place the polishing termination unit and the polishing unit to control the grinding depth of the chemical polishing dresser. In summary, the present invention is characterized in that a small-sized grinding unit and a polishing termination unit are fixed on a large-sized base substrate by a combination to adjust the penetration depth to achieve a certain cutting ability and penetration uniformity. .

1,2‧‧‧Chemical mechanical polishing dresser

10,20‧‧‧Bottom substrate

11, 21‧‧ ‧ bonding layer

12,22,22’‧‧‧ grinding unit

13,23,23',33,43‧‧‧grinding unit substrate

14,24,24',34,44‧‧‧Abrasive layer

15,25‧‧‧grinding termination unit

16,36,46‧‧‧ grinding tips

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a chemical mechanical polishing conditioner capable of controlling the depth of polishing according to Embodiment 1 of the present invention.

2 is a schematic view of a chemical mechanical polishing conditioner capable of controlling the depth of polishing according to Embodiment 2 of the present invention.

3 is a schematic cross-sectional view of a chemical mechanical polishing conditioner capable of controlling the depth of polishing of Embodiment 1.

4 is a schematic cross-sectional view of a chemical mechanical polishing conditioner capable of controlling the depth of polishing of Embodiment 2.

5A to 5C are schematic views showing the outer shape of the polishing tip of Embodiment 1 and Embodiments 3 to 4 of the present invention.

The following describes embodiments of the present invention by way of specific embodiments. Other advantages and utilities of the present invention will be readily apparent to those skilled in the art from this disclosure. In addition, the present invention may be embodied or modified by various other embodiments without departing from the spirit and scope of the invention.

Example 1

Please refer to FIG. 1 , which is a schematic diagram of a chemical mechanical polishing conditioner capable of controlling the depth of polishing according to Embodiment 1 of the present invention. First, a stainless steel base substrate 10 having a thickness of 80 mm and a flat substrate is provided; then, a bonding layer 11 is disposed on the base substrate 10, and secondly, a plurality of polishing units 12 and a plurality of carbonized crucibles are provided. The polishing termination unit 15 has a polishing layer 14 and a polishing unit substrate 13, the polishing unit substrate 13 is a ceramic substrate composed of tantalum carbide, and the surface of the polishing unit substrate 13 is flattened. Surface, then, the same thickness of the polishing layer 14 is formed by chemical vapor deposition, and the polishing layer 14 has a plurality of polishing tips, and the polishing tips are formed in a pyramid shape, for example, a quadrangular pyramid shape (as shown in the figure) 5A) and the polishing tips have the same tip orientation, the same tip angle, and are arranged on the polishing unit substrate 13 by a continuous array; in addition, the polishing tips of the polishing units 12 are higher. The polishing termination unit 15 has a surface of 5 micrometers to 100 micrometers, and the polishing unit 12 and the polishing termination units 15 are fixed to the substrate by the bonding layer 11. In addition, the polishing tips of the polishing units 12 are higher than the surface of the polishing termination unit 15 , and the polishing units 12 and the polishing termination units 15 have a protruding height therebetween, and by the protruding height Controlling the depth of grinding of the workpiece being ground to form a chemical machine capable of controlling the depth of grinding of the present invention Grinding the trimmer 1. Please refer to FIG. 3. FIG. 3 is a schematic cross-sectional view of the chemical mechanical polishing conditioner capable of controlling the polishing depth of Embodiment 1. In FIG. 3, the bottom substrate 10 and the bonding layer 11 have a plurality of polishing units 12 and a plurality of polishing termination units 15, each polishing unit 12 having an abrasive layer 14 and a polishing unit substrate 13, wherein the polishing units 12 And the polishing termination units 15 are arranged in an annular and alternating manner to evenly distribute the force to improve the grinding quality and improve the service life of the dresser.

Example 2

Please refer to FIG. 2. FIG. 2 is a flow chart showing the fabrication of a chemical mechanical polishing dresser capable of controlling the depth of polishing according to Embodiment 2 of the present invention. Embodiment 2 is substantially the same as the apparatus for controlling the grinding depth of the chemical mechanical polishing conditioner described in the foregoing Embodiment 1, except that the polishing unit of Embodiment 1 has the same thickness, that is, the same thickness of the polishing layer and The polishing unit substrate of the same thickness has the first tip height and the second tip height, that is, the same thickness of the polishing layer and the different thickness of the polishing unit substrate. First, a stainless steel bottom substrate 20 having a thickness of 80 μm and being a planar substrate is provided; then, a bonding layer 21 is disposed on the base substrate 20, and second, a plurality of polishing units 22 and 22' and a plurality of The polishing termination unit 25 of the tantalum carbide, wherein each of the polishing units 22 and 22' has polishing layers 24 and 24' and polishing unit substrates 23 and 23', and the polishing unit substrates 23 and 23' are ceramic substrates composed of tantalum carbide And the polishing unit substrates 23 and 23' have two different thicknesses of 20 mm and 30 mm, and the surfaces of the polishing unit substrates 23 and 23' are flattened, and then, the chemical vapor phase is utilized. The deposition method forms the polishing layers 24 and 24' having the same thickness, and the polishing layers 24 and 24' have a plurality of polishing tips, and the polishing tips are formed in a pyramid shape, for example, a quadrangular pyramid shape (as shown in FIG. 5A). And the polishing tips have the same tip orientation, the same tip angle, and are arranged on the polishing unit substrates 23 and 23' by a continuous array, and the polishing units 22 having the first tip height, and The polishing unit 22' having a second tip height, the height difference between the first tip height and the second tip height is 20 micrometers, and further, the polishing tips of the polishing units 22 and 22' are higher than The polishing termination unit 25 has a surface of 5 micrometers to 100 micrometers, and the polishing units 22 and 22' and the polishing termination units 25 are fixed to the base substrate 20 by the bonding layer 21; wherein the polishing units are The polishing tips of 22 and 22' are higher than the surfaces of the polishing termination units 25, and the polishing units 22 and 22' and the polishing termination units 25 have a protruding height, and are controlled by the protruding height. Grinding workpiece Grinding depth, the present invention can be controlled to form a chemical mechanical polishing pad dresser of the polishing depth 2. Please refer to FIG. 4. FIG. 4 is a schematic cross-sectional view of the chemical mechanical polishing conditioner capable of controlling the polishing depth of Embodiment 2. In FIG. 4, the bottom substrate 20 and the bonding layer 21 have a plurality of polishing units 22 and 22' and a plurality of polishing termination units 25, each of the polishing units 22 and 22' having polishing layers 24 and 24' and a polishing unit substrate. 23 and 23', wherein the grinding unit substrates 23 and 23' require a surface patterning process to form a tip end, and further, the grinding unit 22 having a first tip height and a white pyramid are indicated by a grid pyramid The polishing unit 22' has a second tip height, and then the polishing unit 22 and the polishing termination units 25 are arranged in an annular and alternating manner.

Example 3~4

Embodiments 3 to 4 of the present invention are substantially the same as the apparatus for controlling the polishing depth of the chemical mechanical polishing conditioner described in the first embodiment, except that the polishing tip of the embodiment 1 is formed into a pyramid shape, and is implemented. The grinding tips of Examples 3 to 4 have various specific pattern shapes. Please refer to FIG. 5A to FIG. 5C , which are schematic diagrams showing the shapes of the grinding tips of Embodiments 1 and 3 to 4 of the present invention.

As shown in FIG. 5A, the plurality of polishing tips 16 of the embodiment 1 have a specific pattern shape of a pyramid shape, and the polishing tips 16 of the polishing layer 14 are arranged on the polishing unit substrate 13 by a continuous array. As shown in FIG. 5B, the plurality of polishing tips 36 of Embodiment 3 have a specific pattern shape of a prismatic shape, for example, a quadrangular prism shape, and the polishing tips 36 of the polishing layer 34 are arranged in a continuous array by grinding. On the unit substrate 33. As shown in FIG. 5C, the plurality of polishing tips 46 of Embodiment 4 have a cylindrical shape, and the polishing tips 46 of the polishing layer 44 are arranged on the polishing unit substrate 43 by a continuous array.

The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

1‧‧‧Chemical mechanical polishing dresser

10‧‧‧Bottom substrate

11‧‧‧Combination layer

12‧‧‧grinding unit

13‧‧‧ Grinding unit substrate

14‧‧‧Abrasive layer

15‧‧‧Abrading termination unit

Claims (21)

A CMP polishing dresser capable of controlling a grinding depth, comprising: a bottom substrate, wherein the bottom substrate is a groove substrate; a bonding layer is disposed on the bottom substrate; and a plurality of polishing units are disposed on the bonding layer Each of the polishing units has an abrasive layer and a polishing unit substrate, the polishing layer is a diamond coating formed by chemical vapor deposition, and the polishing layer has a plurality of polishing tips; and a plurality of polishing termination units, Provided on the bonding layer, the polishing termination unit is composed of a wear-resistant material, and the wear-resistant materials are a ceramic material or a polymer material; wherein the grinding units are The polishing tips are higher than the surface of the polishing termination unit, and the polishing unit and the polishing termination unit have a protruding height, and the protruding height is used to control the grinding depth of the workpiece to be polished. The CMP polishing dresser capable of controlling the depth of grinding as described in claim 1, wherein the polishing units and the polishing termination units are arranged in an annular manner. A chemical mechanical polishing conditioner capable of controlling the depth of grinding as described in claim 1, wherein the polishing units and the polishing termination units are arranged in an alternating manner. A chemical mechanical polishing dresser capable of controlling the depth of grinding as described in claim 1, wherein the grinding unit has a first tip height And a second tip height such that the grinding units form different tip heights. The CMP polishing dresser according to claim 4, wherein the height difference between the first tip height and the second tip height is 5 micrometers to 100 micrometers. The CMP polishing dresser according to claim 5, wherein the height difference between the first tip height and the second tip height is 15 micrometers to 60 micrometers. The CMP polishing dresser according to the fourth aspect of the invention, wherein the grinding unit further comprises a third tip height or a fourth tip height. The CMP polishing dresser of claim 1, wherein the grinding tips of the grinding units are 5 microns to 100 microns higher than the surface of the polishing termination unit. A chemical mechanical polishing conditioner capable of controlling the depth of grinding as described in claim 1, wherein the polishing units have the same height such that the chemical mechanical polishing conditioner has a flattened surface. The chemical mechanical polishing conditioner capable of controlling the depth of grinding according to the first aspect of the invention, wherein the polishing tips are formed in the shape of a blade, a cone, an arc, a cylinder, a pyramid, or a prism. A chemical mechanical polishing dresser capable of controlling the depth of grinding as described in claim 1, wherein the grinding tips have the same tip orientation, or the grinding tips have different tip orientations. A chemical mechanical polishing conditioner as claimed in claim 1, wherein the grinding tips have the same tip angle, or the grinding tips have different tip angles. A CMP polishing dresser capable of controlling the depth of grinding as described in claim 1, wherein the grinding tips have the same pitch, or the grinding tips have different pitches. A chemical mechanical polishing conditioner as claimed in claim 1, wherein the polishing units have the same thickness, or the polishing units have different thicknesses. The chemical mechanical polishing conditioner according to claim 1, wherein the chemical mechanical polishing conditioner further comprises an intermediate layer interposed between the polishing layer and the polishing unit substrate. The CMP polishing dresser according to claim 15, wherein the intermediate layer is at least one selected from the group consisting of alumina, tantalum carbide, and aluminum nitride. The chemical mechanical polishing conditioner capable of controlling the polishing depth as described in claim 1, wherein the polishing unit substrate is a conductive substrate or an insulating substrate. A chemical mechanical polishing dresser capable of controlling the depth of grinding as described in claim 1, wherein the bonding layer is composed of a ceramic material, a brazing material, a plating material, a metal material, or a polymer material. A chemical mechanical polishing dresser capable of controlling the depth of grinding as described in claim 18, wherein the polymer material is an epoxy resin, a polyester resin, a polyacrylic resin, or a phenol resin. The CMP polishing dresser according to claim 18, wherein the brazing material is at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, and combinations thereof. Group of. The chemical mechanical polishing conditioner according to claim 1, wherein the bottom substrate is a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate, a plastic substrate, or a combination thereof.