TW201727818A - Substrate support device and exposure device - Google Patents

Abstract

Provided are: a substrate base provided with a surface for supporting in a flat state or a curved state having a prescribed curve a flexible and transmissive substrate to be optically treated; and a film formed on the surface of the substrate base and having a reflectance of 50% or less in relation to the light (ultraviolet rays for exposure visible light for alignment etc.) used in the optical treatment.

Description

Substrate support device

The present invention relates to a substrate supporting device that supports a portion of a flexible substrate processed by a processing device in a bent state or in a flat state, and an exposure device for a flexible substrate supported by the supporting device.

The present application claims priority based on Japanese Patent Application No. 2012-188116, filed on A.

In recent years, as a flat panel display, in addition to a liquid crystal method or a plasma method, an organic EL method has also attracted attention. In the case of an active matrix type organic EL (AMOLED) display, a pixel light-emitting layer containing organic EL or a transparent layer is laminated on a back sheet including a thin film transistor (TFT) for driving each pixel, a driving circuit, various signal lines, and the like. The top plate of the electrode layer or the like.

In the display manufacturing of the organic EL, as one of the methods of lower cost and higher mass productivity, there is proposed a method of making a flexible resin material or a plastic or a metal foil to a thickness of 200 μm or less. A long sheet (film) is formed, and a back sheet or a top sheet of the display is directly formed by a roll-to-roll method (Patent Document 1).

Patent Document 1 discloses a method of continuously forming a flexible strip (PET (Poly-Ethylene Terephthalate) film or the like) by a printing machine such as an inkjet method. An electrode layer, a semiconductor layer, an insulating film, and the like constituting the TFT for each pixel, and a fluid material for forming a pixel light-emitting layer and a wiring layer, and manufacturing the display at low cost Device.

Further, Patent Document 1 proposes a method of forming a relative positional relationship between the gate electrode layer of the TFT stacked on the insulating layer and the drain electrode/primary electrode layer or the shape of each electrode in order to more precisely retouch the insulating layer. The self-organized monolayer (SAM) of the liquid-repellent surface of the modified surface is irradiated with ultraviolet rays, and the shape of each electrode layer is more precisely retouched using a pattern exposure apparatus using ultraviolet rays.

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] International Publication No. 2010/001537

In the exposure apparatus of Patent Document 1, the pattern of the planar mask is projected onto the flexible long-length sheet substrate that is supported flat by the projection optical system.

On the other hand, when the pattern of the mask is repeatedly exposed on the flexible sheet substrate that is continuously conveyed by the roll-to-roll method, the mask is conveyed by the direction in which the sheet substrate is conveyed. A scanning type exposure apparatus which is a cylindrical rotating mask can be expected to have a leap in productivity.

The flexible sheet substrate that is continuously conveyed is a thin substrate, and is supported by a flat or curved mat surface of an air bearing. Alternatively, the sheet substrate is curled on one of the cylindrical outer peripheral surfaces of the rotating reel (roller having a large diameter), and is supported in a bent state.

A PET film having a high transparency in forming a transparent layer such as ITO, PEN (Poly-Ethylene) Naphthalate, polyethylene naphthalate film, ultra-thin glass, etc., when patterned using an exposure apparatus, is projected onto a photo-sensitive layer (for example, a photoresist, a photosensitive decane coupling) coated on the surface of the substrate. The pattern exposure light of the material or the like reaches the mat surface under the substrate or the outer peripheral surface of the rotating reel.

Therefore, there is a case where the light component (return light) reflected on the peripheral surface of the pad surface or the rotating reel returns from the back side of the substrate to the surface side (at the projection optical system), so that the image formed on the photosensor layer is patterned. Deterioration. If the reflectance on the back surface of the substrate or the outer surface of the rotating reel can be suppressed to be low, the influence of the return light can be ignored.

However, in order to perform calibration of the exposure apparatus or alignment of the substrate, a reference mark or a reference pattern is provided on one of the flat surface of the flat surface or the outer surface of the rotating reel, and is detected by an optical alignment microscope or the like. Or the reflectance of the outer peripheral surface of the rotating reel is low, so that it is difficult to detect the reference mark or the reference pattern with good contrast.

It is an aspect of the present invention to provide a substrate supporting device that reduces the influence of reflected light (return light) from a member supporting a substrate.

Moreover, an aspect of the present invention provides a substrate supporting apparatus capable of satisfactorily detecting a reference mark or a reference pattern of a portion of a support surface of a device formed on a support substrate by an optical observation device such as an alignment microscope. Or reflected light (return light) from a mark or pattern formed on the substrate.

Further, an aspect of the present invention is to provide an exposure apparatus that performs high-accuracy light patterning on a substrate supported by such a substrate supporting device.

According to a first aspect of the present invention, a substrate supporting device comprising: a base is provided And a surface for supporting a flexible substrate having optical transparency (for example, exposure processing or alignment measurement processing) in a curved state or in a flat state; and a film body formed on the surface The reflectance of the light used for the optical treatment on the surface of the substrate was 50% or less.

According to a second aspect of the present invention, there is provided a substrate supporting apparatus comprising: a substrate provided with a flexible substrate for performing optical processing (for example, exposure processing or alignment measurement processing) a curved state or a flat state supporting surface; a film body formed on the surface of the substrate, having a reflectance of 50% or less for light used for optical processing; and a reference pattern formed by a slight step On the film body.

According to a third aspect of the present invention, an exposure apparatus for performing pattern exposure using a substrate supporting device of a first aspect or a second aspect is provided.

According to the first aspect and the second aspect of the present invention, there is provided a support device capable of reducing unnecessary exposure to noise (unnecessary pattern reflection, etc.) when exposing a pattern to a transparent substrate. .

According to the third aspect of the present invention, an exposure apparatus capable of performing precise pattern exposure can be provided.

DM‧‧‧Cylinder mask

DR‧‧‧Rotary reel

DRs‧‧‧ rotating drum outer peripheral surface

DR1‧‧‧Rotating drum substrate

DR2‧‧‧ base layer of rotating reel

The top of the DR3‧‧‧ rotating reel

P‧‧‧Flexible substrate

PL1~PL4‧‧‧Projection Optical System

AM1~AM5‧‧‧Alignment system

RMP‧‧‧ reference pattern

RL1, RL2, RLa, RLb, RLc‧‧‧ line pattern

UW1~UW4‧‧‧Drawing module

Fig. 1 is a view showing a schematic configuration of an exposure apparatus according to a first embodiment.

Fig. 2 is a perspective view showing the arrangement of main parts of the exposure apparatus of Fig. 1.

Fig. 3 is a view showing the configuration of a projection optical system of the exposure apparatus of Figs. 1 and 2;

Fig. 4 is a schematic view showing the arrangement relationship between the illumination area and the projection area.

Fig. 5 is a view showing the arrangement of a rotating reel and an encoder head of a support substrate.

Figure 6 is a diagram showing the arrangement relationship between the alignment system on the substrate and the projection area.

Fig. 7 is a view schematically showing the configuration of a substrate supported on a rotating reel.

Fig. 8 is a cross-sectional view showing the surface structure of the rotary drum of the first embodiment.

Figure 9 is a graph showing the reflectance characteristics produced by the thickness of the surface material of the rotating reel.

Fig. 10 is a perspective view showing a surface structure of a rotary reel according to a second embodiment.

Fig. 11 is a cross-sectional view showing the surface structure of a rotary reel according to a second embodiment.

Fig. 12 is a view showing the configuration of a pattern drawing device according to a third embodiment.

Fig. 13 is a view for explaining a drawing form of a substrate of the apparatus of Fig. 12;

Fig. 14 is a perspective view showing the surface structure of the rotary drum of the fourth embodiment.

Fig. 15 is a view showing a cross section of a surface structure of a rotary reel according to a fifth embodiment.

Fig. 16 is a view showing the configuration of a pattern exposure apparatus according to a sixth embodiment.

[First Embodiment]

Fig. 1 is a view showing the overall configuration of a projection type exposure apparatus EX for a flexible substrate of the present embodiment. The exposure apparatus EX irradiates the photosensitive layer of the flexible sheet-like substrate P conveyed from the processing apparatus of the previous step with the patterned light of the ultraviolet rays corresponding to the circuit pattern or the wiring pattern for display.

The ultraviolet light includes, for example, g-rays (436 nm), h-rays (405 nm), i-rays (365 nm), or excimer lasers of KrF, XeCl, ArF, etc., which are bright lines of mercury discharge or the like (wavelengths of 248 nm, 308 nm, and 193 nm, respectively). ), or from semiconductor laser source, LED source, high frequency harmonics Light having a wavelength of 400 nm or less, such as a laser light source.

The exposure apparatus EX of Fig. 1 is disposed in a greenhouse EVC. The exposure device EX is placed on the floor of the manufacturing plant via the passive or active vibration isolating units SU1, SU2. In the exposure apparatus EX, a transport mechanism for transporting the substrate P transported from the previous step to a subsequent step at a predetermined speed is provided.

The transport mechanism is composed of a member: an edge position controller EPC that controls the center of the Y direction of the substrate P (the width direction orthogonal to the longitudinal direction) to a fixed position; the drive roller DR4 is clamped; a cylinder DR that supports the portion of the substrate P that is patterned and exposed in a cylindrical shape, and rotates around the rotation center line AX2 to convey the substrate P; and tension adjustment rollers RT1, RT2 that apply to the substrate P that is curled on the rotating reel DR A predetermined tension; and two sets of driving rollers DR6, DR7 for imparting a predetermined slack (margin) DL to the substrate P.

Further, the exposure device EX is provided with a cylindrical cylindrical mask DM that rotates around the rotation center line AX1, and a plurality of projection optical systems PL1, PL2, ... which are formed in the cylindrical mask. One portion of the transmissive mask pattern on the outer surface of the DM is projected onto a portion of the substrate P supported by the rotating reel DR; the alignment system AM is used to project a portion of the mask pattern relative to the substrate P. Alignment.

The alignment system AM includes an alignment microscope that detects an alignment mark or the like formed in advance on the substrate P.

In the above configuration, the XY plane of the orthogonal coordinate system XYZ set in FIG. 1 is set in parallel with the ground of the factory, and the width direction (also referred to as TD direction) of the surface of the substrate P is set so as to coincide with the Y direction. . In this case, the rotation center line AX1 of the cylindrical mask DM and the rotation center line AX2 of the rotation reel DR are both set in parallel with the Y-axis, and are arranged to be spaced apart in the Z-axis direction.

Further, the projection optical systems PL1, PL2, ... of the present embodiment are described in detail below, and are configured by a multi-lens method in which a plurality of projection fields of view (projection images) are arranged in a zigzag manner, and the projection magnification is set to be equal (x1).

The diameter of the outer peripheral surface (pattern surface) of the cylindrical mask DM (the radius from the center AX1) and the diameter of the outer peripheral surface (support surface) of the rotating reel DR (the radius from the center AX2) are substantially equal. For example, the diameter of the cylindrical mask DM can be set to 30 cm, and the diameter of the rotating reel DR can be set to 30 cm.

Further, the diameter of the outer circumferential surface (pattern surface) of the cylindrical mask DM (the radius from the center AX1) and the diameter of the outer circumferential surface (support surface) of the rotating reel DR (the radius from the center AX2) are not necessarily the same, and Can be very different. For example, the diameter of the cylindrical mask DM may be set to 30 cm, and the diameter of the rotating reel DR may be set to about 40 to 50 cm.

Furthermore, the above numerical values are examples, and the present invention is not limited thereto.

Further, when the diameter of the rotating reel DR is equal to the diameter of the cylindrical mask DM (pattern surface), strictly speaking, the thickness of the substrate P which is curled on the outer circumferential surface of the rotating reel DR is considered. For example, when the thickness of the substrate P is set to 100 μm (0.1 mm), the radius of the outer peripheral surface of the rotating reel DR is only 0.1 mm smaller than the radius of the cylindrical mask DM (pattern surface).

Further, when the total length (perimeter) of the circumferential direction of the outer circumferential surface of the rotating reel DR is an appropriate length, for example, 100.0 cm, the diameter of the outer circumferential surface of the rotating reel DR is 100/ by the pi ratio π. π cm, so it is necessary to process the diameter with a precision of several μm to submicron.

In the present embodiment, a transmissive cylindrical mask DM is used. Therefore, an illumination system IU is provided in the internal space of the cylindrical mask DM, and the illumination system IU is irradiated toward the pattern surface (outer peripheral surface) of the cylindrical mask DM. Corresponding to the field of view of each of the projection optical systems PL1, PL2, ... Illumination light (ultraviolet light) for exposure.

In the case where the cylindrical mask DM is of a reflection type, the peripheral surface of the cylindrical mask DM (reflective pattern surface) is exposed to light through a part of the optical elements of the projection optical systems PL1, PL2, .... The oblique illumination optical system of the illumination light.

In the above configuration, the cylindrical mask DM and the rotating reel DR are synchronously rotated at a predetermined rotational speed ratio, and the image of the mask pattern formed on the outer peripheral surface of the cylindrical mask DM is continuously scanned and exposed repeatedly. The surface of the substrate P (the surface curved along the cylindrical surface) curled on a portion of the outer peripheral surface of the rotating reel DR.

The substrate P used in the present embodiment is, for example, a resin film, a foil made of a metal such as stainless steel or an alloy, or the like.

The material of the resin film includes, for example, a polyethylene resin, a polypropylene resin, a polyester resin, an ethylene-ethylene copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polyimide resin, a polycarbonate resin, One or more of a polystyrene resin and a vinyl acetate resin.

In order to be able to substantially ignore the amount of deformation due to the heat received in the various processing steps, the substrate P can be selected to have a coefficient of thermal expansion that is not significantly greater. The coefficient of thermal expansion can be reduced by, for example, mixing an inorganic filler with a resin film. As the inorganic filler, for example, titanium oxide, zinc oxide, aluminum oxide, cerium oxide or the like can be used.

In addition, the substrate P may be a single layer body made of a very thin glass having a thickness of, for example, about 100 μm, which is produced by a floating method or the like, or a laminate of the above resin film, foil, or the like may be bonded to the ultrathin glass.

Furthermore, the above numerical values are examples, and the present invention is not limited thereto.

Fig. 2 is a perspective view showing the arrangement relationship of the cylindrical mask DM, the plurality of projection optical systems PL1, PL2, ..., and the rotating reel DR in the exposure apparatus EX shown in Fig. 1.

In FIG. 2, each of the projection optical systems PL1, PL2, PL3, PL4, ... (here, four projection optical systems are shown) disposed between the cylindrical mask DM and the rotating reel DR, for example, According to Japanese Laid-Open Patent Publication No. Hei 7-57986, two refraction-type equal-magnification imaging lenses using one-half (half-field) circular projection fields are connected in series in the Z direction to make the mask pattern an erect non-reverse image. It is projected on the substrate side in equal magnification.

The projection optical systems PL1, PL2, PL3, PL4, ... are all of the same configuration, and the details are described below.

Further, the projection optical systems PL1, PL2, PL3, PL4, ... are attached to the solid holding column PLM and integrated. The holding column PLM is made of a metal such as nickel steel having a small thermal expansion coefficient with respect to temperature change, and the positional variation between each of the projection optical systems PL1, PL2, PL3, PL4, ... due to temperature change can be suppressed to be small. .

As shown in FIG. 2, on the outer peripheral surface of the rotating reel DR, the rotation angle position (or the position in the circumferential direction) of the rotating reel DR is measured at both end portions in the direction (Y direction) in which the rotation center line AX2 extends. The scale portions GPa and GPb of the encoder system are provided in a ring shape over the entire circumference direction.

The scale portions GPa and GPb are arranged in a circumferential direction of the outer circumferential surface of the rotary reel DR at a fixed distance (for example, 20 μm), and are formed by a lattice of concave or convex lattice lines, and are formed by an incremental scale.

Furthermore, the above numerical values are examples, and the present invention is not limited thereto.

The substrate P is configured to be curled so as to avoid the inside of the scale portions GPa and GPb at both ends of the rotating reel DR. In the case where a strict arrangement relationship is required, the outer circumferential surfaces of the scale portions GPa and GPb and the outer peripheral surface of the substrate P curled on the rotating reel DR are made the same. Set the surface (the same radius from the center line AX2). Therefore, the outer peripheral surface of the outer peripheral surface of the scale portions GPa and GPb for curling the substrate with respect to the rotating reel DR may be larger than the thickness of the substrate P in the diameter direction.

In order to rotate the rotating reel DR around the rotation center line AX2, a shaft portion Sf2 coaxial with the center line AX2 is provided on both sides of the rotating reel DR. The shaft portion Sf2 is provided with a rotational torque from a drive source (such as a motor or a reduction gear mechanism) (not shown).

Further, in the present embodiment, encoder heads EN1 and EN2 are provided, which are opposed to each of the scale portions GPa and GPb at both end portions of the rotating reel DR, and are fixed to the respective projection optical systems PL1. Column PLM of PL2, PL3, PL4, .... In FIG. 2, only the two encoder heads EN1 and EN2 opposed to the scale portion GPa are exemplified, and the same encoder heads EN1 and EN2 are disposed opposite to the scale portion GPb.

As described above, by attaching the encoder heads EN1 and EN2 to the column PLM, it is possible to suppress the relative positional variation of each of the projection optical systems and the encoder heads EN1 and EN2 due to the influence of the temperature change to be small.

Each of the encoder heads EN1 and EN2 projects a light beam for measurement to the scale portions GPa and GPb, and photoelectrically detects the reflected light beam (diffracted light) to generate a positional change in the circumferential direction of the scale portions GPa and GPb. The detection signal (for example, a two-phase signal having a phase difference of 90 degrees).

By performing the digital processing by interpolating the detection signal in a counter circuit (not shown), the angular change of the rotating reel DR, that is, the positional change in the circumferential direction of the outer peripheral surface can be measured with a resolution of a submicron.

Moreover, as shown in FIG. 2, each encoder head EN1, EN2 is set in the set orientation line. Le1, Le2. The projection lines Le1 and Le2 are set to pass through the projection area of the measuring beam on the scale portion GPa (GPb), and are set in a plane parallel to the XZ plane in FIG. 2, and the extension line is connected to the rotation center line of the rotating reel DR. The imaginary line set by the AX2 cross mode.

The details are described below. If viewed in the XZ plane, the orientation line Le1 is set so as to be parallel to the chief ray of the imaging beam projected onto the substrate P from the odd-numbered projection optical systems PL1, PL3. Further, when viewed in the XZ plane, the orientation line Le2 is set so as to be parallel to the chief ray of the imaging beam projected onto the substrate P from the even-numbered projection optical systems PL2 and PL4.

On the other hand, on both end sides of the cylindrical mask DM, a shaft portion Sf1 is provided coaxially with the rotation center line AX1, and a driving source (not shown) is provided to the cylindrical mask DM via the shaft portion Sf1 ( Rotational torque of motor, etc.). In the same manner as the rotary reel DR, the scale portion GPM of the encoder measurement is set to the entire circumferential direction centering on the rotation center line AX1, and is respectively set to be the same as the rotation reel DR. ring.

The transmissive mask pattern formed on the outer peripheral surface of the cylindrical mask DM is disposed inside the scale portion GPM avoiding both end portions. When it is necessary to have a strict arrangement relationship, the outer surface of the scale portion GPM and the outer surface of the pattern surface (cylindrical surface) of the cylindrical mask DM are the same surface (the same radius from the center line AX1). set up.

Further, an encoder head is disposed in the direction of each field of view of the odd-numbered projection optical systems PL1, PL3, ... as viewed from the rotation center line AX1 at a position facing each of the scale portion GPM of the cylindrical mask DM. EN11, viewed from the rotation center line AX1, an encoder head EN12 is disposed in the direction of each field of view of the even-numbered projection optical systems PL2, PL4, .

The encoder heads EN11 and EN12 are also mounted on the holding columns PLM of the fixed projection optical systems PL1, PL2, PL3, PL4, .

Further, the encoder heads EN11 and EN12 are disposed on the installation direction lines Le11 and Le12 in the same manner as the arrangement positions of the encoder heads EN1 and EN2 on the rotary reel DR side.

The direction lines Le11 and Le12 are set to pass through the area of the measuring beam on which the encoder head is projected on the scale portion GPM of the cylindrical mask DM, and are set in a plane parallel to the XZ plane in FIG. 2, and the extension line is rounded. The setting of the rotation center line AX1 of the cylinder cover DM is set.

In the case of the cylindrical mask DM, the scale or lattice pattern engraved on the scale portion GPM and the mask pattern of the device (circuit of the display panel, etc.) may be drawn together and formed on the outer circumference of the cylindrical mask DM. Therefore, the relative positional relationship between the mask pattern and the scale portion GPM can be strictly set.

In the present embodiment, the cylindrical mask DM is exemplified as a transmissive type, and in the reflective cylindrical mask, the scale portion GPM (scale, lattice, origin pattern, etc.) and the mask of the device can be collectively formed in the same manner. pattern.

Generally, in the case of manufacturing a reflective cylindrical mask, the metal cylindrical material having the shaft portion Sf1 is processed by a high-precision lathe and a grinder, so that the roundness or the axial deviation of the outer peripheral surface (eccentricity) can be performed. ) The suppression is minimal. Therefore, by forming the scale portion GPM on the outer peripheral surface by the same procedure as the formation of the mask pattern, highly accurate encoder measurement can be performed.

As described above, in the present embodiment, the outer circumferential surface of the scale portion GPM formed in the cylindrical mask DM is set to have substantially the same radius as the mask pattern surface, and is formed on the scale portions GPa and GPb of the rotary reel DR. The outer peripheral surface is set to have substantially the same radius as the outer peripheral surface of the substrate P.

Therefore, the encoder heads EN11, EN12 can detect the scale portion GPM at the same diameter direction as the mask pattern surface (the illumination region of the illumination system IU) on the cylindrical mask DM, and the encoder heads EN1, EN2 can be curled and curled. Projection area on the substrate P of the rotating reel DR The image planes are in the same diameter direction detection scale portions GPa and GPb.

Therefore, the Abbe error caused by the difference between the measurement position and the processing position in the diameter direction of the rotating system can be reduced.

Next, a specific configuration of the projection optical systems PL1 to PL4, ... of the present embodiment will be described with reference to Fig. 3 . Since each of the projection optical systems has the same configuration, only the configuration of the projection optical system PL1 will be described as a representative. The projection optical system PL1 shown in FIG. 3 includes a first imaging optical system 51 and a second imaging optical system 58 which are telecentric of the catadioptric type.

The first imaging optical system 51 is composed of a plurality of lens elements, a focal length correcting optical member 44, an image shift correcting optical member 45, a first deflecting member 50, and a first concave mirror 52 disposed on the facet.

The first imaging optical system 51 is a mask pattern which is formed in the illumination area IR1 formed on the pattern surface (outer peripheral surface) of the cylindrical mask DM by the illumination light D1 (the chief ray is EL1) from the illumination system IU. The image is imaged on an intermediate image plane provided with a field stop 43.

The second imaging optical system 58 is composed of a plurality of lens elements, a second deflecting member 57, a second concave mirror 59 disposed on the pupil surface, and an optical member 47 for magnification correction.

The second imaging optical system 58 re-images the image limited by the aperture shape (for example, trapezoidal shape) of the field stop 43 in the intermediate image created by the first imaging optical system 51 in the projection area PA1 of the substrate P.

In the configuration of the above-described projection optical system PL1, the focal length correcting optical member 44 finely adjusts the focus state of the pattern image (hereinafter referred to as projection image) of the mask formed on the substrate P, and the image shift correction optical member 45 is used. The projection image is slightly laterally shifted in the image plane, and the magnification correcting optical member 47 is made to have a magnification of the projection image in a range of about ± tens of ppm. Corrected.

Further, the projection optical system PL1 is provided with a rotation correcting mechanism 46 that causes the first deflecting member 50 to slightly rotate around an axis parallel to the Z-axis in FIG. 3 to project a projection on the substrate P. It is like a slight rotation in the image plane.

The image forming light beam EL2 from the pattern in the illumination region IR1 on the cylindrical mask DM is emitted from the illumination region IR1 in the normal direction, and passes through the focal length correcting optical member 44 and the image shift correcting optical member 45 in the first deflecting member 50. The first reflecting surface (planar mirror) p4 is reflected by the plurality of lens elements, and is reflected by the first concave mirror 52, and is again reflected by the plurality of lens elements on the second reflecting surface (planar mirror) p5 of the first deflecting member 50 to reach the visual field. Light 43.

In the present embodiment, the plane including the rotation center line AX1 of the cylindrical mask DM shown in Fig. 2 (or Fig. 1) and the rotation center line AX2 of the rotation reel DR is taken as the center plane p3 (and the YZ plane). parallel). In this case, the optical axis AX3 of the first imaging optical system 51 and the optical axis AX4 of the second imaging optical system 58 are disposed so as to be orthogonal to the central plane p3.

In the present embodiment, when the XZ plane is observed, the illumination region IR1 is shifted by a predetermined amount in the -X direction with respect to the center plane p3. Therefore, the chief ray EL1 of the illumination light D1 passing through the center of the illumination region IR1 is extended. The line is set so as to intersect the rotation center line AX1 of the cylindrical mask DM.

Thereby, the chief ray EL3 of the imaging light beam EL2 from the pattern of the center point in the illumination area IR1 also travels in a state of being inclined in the XZ plane with respect to the center plane p3, and reaches the first reflection surface of the first deflecting member 50. P4.

The first deflecting member 50 is a triangular cymbal extending in the Y-axis direction. In the present embodiment, each of the first reflecting surface p4 and the second reflecting surface p5 includes a surface formed on the triangular ridge Mirror (the surface of the reflective film).

The first deflecting member 50 is such that the chief ray EL3 from the illumination region IR1 to the first reflecting surface p4 is inclined with respect to the center plane p3 in the XZ plane, and the chief ray EL3 from the second reflecting surface p5 to the field stop 43 is made. The imaging beam EL2 is deflected in a manner parallel to the center plane p3.

In order to form such an optical path, in the present embodiment, the ridge line intersecting the first reflecting surface p4 of the first deflecting member 50 and the second reflecting surface p5 is disposed on the optical axis AX3. When the plane including the ridge line and the optical axis AX3 and parallel to the XY plane is p6, the first reflection surface p4 and the second reflection surface p5 are arranged at an asymmetrical angle with respect to the plane p6.

Specifically, when the angle of the first reflecting surface p4 with respect to the plane p6 is θ1 and the angle of the second reflecting surface p5 with respect to the plane p6 is θ2, the angle (θ1 + θ2) is set in the present embodiment. For less than 90°, the angle θ1 is set to less than 45°, and the angle θ2 is set to substantially 45°.

The chief ray EL3 incident on the plurality of lens elements by the reflection on the first reflecting surface p4 is set in parallel with the optical axis AX3, and the principal ray EL3 passes through the center of the first concave mirror 52, that is, the optical axis AX3 of the 瞳 plane. The intersection point ensures the imaging state of the telecentric.

Therefore, in FIG. 3, as long as the inclination angle of the chief ray EL3 between the illumination region IR1 and the first reflection surface p4 with respect to the center plane p3 in the XZ plane is θd, the first reflection is set as in the following equation (1). The angle θ1 of the surface p4 is sufficient.

Θ1=45°-(θd/2)...(1)

The imaging beam EL2 passing through the first imaging optical system 51 and passing through the field stop 43 is reflected by the third reflecting surface (planar mirror) p8 of the second deflecting member 57 which is the element of the second imaging optical system 58, and passes through a plurality of lens elements. The second concave mirror 59 disposed on the kneading surface is reached.

The imaging beam EL2 reflected by the second concave mirror 59 passes through a plurality of lens elements again. The fourth reflecting surface (planar mirror) p9 of the deflecting member 57 reflects and passes through the magnification correcting optical member 47 to reach the projection area PA1 on the substrate P.

Thereby, the image of the pattern appearing in the illumination area IR1 is projected in the projection area PA1 at a magnification (×1).

The second deflecting member 57 is also a triangular ridge extending in the Y-axis direction. In the present embodiment, each of the third reflecting surface p8 and the fourth reflecting surface p9 includes a mirror surface (surface of the reflecting film) formed on the surface of the triangular ridge.

The second deflecting member 57 is such that the chief ray EL3 between the field stop 43 and the third reflecting surface p8 is parallel to the center plane p3 in the XZ plane, and the chief ray EL3 between the fourth reflecting surface p9 and the projection area PA1 is opposed. The imaging beam EL2 is deflected in such a manner that it is inclined in the XZ plane at the center plane p3.

In the present embodiment, when viewed in the XZ plane, the projection area PA1 is also shifted by only a predetermined amount in the -X direction with respect to the center plane p3, so that the extension line of the chief ray EL3 of the imaging beam reaching the projection area PA1 is It is set so as to intersect with the rotation center line AX2 of the rotating reel DR. Thereby, the image plane formed in the projection area PA1 serves as a tangent plane of the surface (curved surface) of the substrate P supported on the outer circumferential surface of the rotating reel DR, and faithful projection exposure for ensuring resolution can be performed.

In order to form such an optical path, in the present embodiment, the ridge line intersecting the third reflecting surface p8 of the second deflecting member 57 and the second reflecting surface p9 is disposed on the optical axis AX4, and the ridge line and the optical axis AX4 are included and When the plane in which the XY planes are parallel is p7, the third reflecting surface p8 and the fourth reflecting surface p9 are arranged at an asymmetrical angle with respect to the plane p7.

Specifically, when the angle of the third reflecting surface p8 with respect to the plane p7 is θ3 and the angle of the fourth reflecting surface p9 with respect to the plane p7 is θ4, the angle (θ3+θ4) is set to be less than At 90°, the angle θ4 is set to less than 45°, and the angle θ3 is set to substantially 45°.

The principal ray EL3 that has been emitted from the plurality of lens elements and is incident on the fourth reflecting surface p9 by the second concave mirror 59 is set in parallel with the optical axis AX4, thereby ensuring the imaging state of the telecentric.

Therefore, in FIG. 3, when the inclination angle of the chief ray EL3 between the fourth reflection surface p9 and the projection area PA1 with respect to the center plane p3 in the XZ plane is θs, the angle θ4 of the fourth reflection surface p9 can be set. Set as in the following formula (2).

Θ4=45°-(θs/2)...(2)

The configuration of the projection optical system PL1 has been described above, and the odd-numbered projection optical systems PL3, ... are configured in the same manner as in Fig. 3, and the even-numbered projection optical systems PL2, PL4, ... are arranged such that the arrangement of Fig. 3 is related to the center plane p3. Symmetrically folded back.

Further, the projection correction optical member 44, the image shift correction optical member 45, the rotation correction mechanism 46, and the magnification correction optical member 47 are provided as imaging characteristics in any of the odd-numbered and even-numbered projection optical systems PL1 to PL4. Adjust the organization.

Thereby, the projection conditions of the projected image on the substrate P can be adjusted for each projection optical system. Here, the projection condition includes one or more items of a projection position, a rotation position, a magnification, and a focal length of a projection area on the substrate P. The projection conditions can be set for each of the positions of the projection regions of the substrate P at the time of synchronous scanning. By adjusting the projection conditions of the projected image, the strain of the projected image when compared with the mask pattern can be corrected.

The focal length correcting optical member 44 is formed such that two wedge-shaped turns are reversed (in FIG. 3, reversed with respect to the X direction), and the whole is a transparent parallel plate. Do not change the interval between the opposite faces of the pair of 而 to make it equal to the direction of the slope, and change as parallel The thickness of the plate is finely adjusted for the effective optical path length, and the focus state of the pattern image formed in the projection area PA1 is finely adjusted.

The image-shifting correction optical member 45 is composed of a transparent parallel plate glass which can be inclined in the XZ plane in Fig. 3 and a transparent parallel plate glass which can be inclined in a direction orthogonal thereto. By adjusting the respective tilt amounts of the two parallel flat glass sheets, the pattern image formed on the projection area PA1 can be slightly shifted in the X direction or the Y direction.

The magnification correction optical member 47 is configured such that three lenses of a concave lens, a convex lens, and a concave lens are disposed coaxially at a predetermined interval, and a concave lens is fixed before and after, and the intermediate convex lens is moved in the optical axis (main light EL3) direction. Thereby, the pattern image formed in the projection area PA1 maintains the imaging state of the telecentricity, and isotropically expanded or reduced in a small amount.

The rotation correcting mechanism 46 slightly rotates the first deflecting member 50 about an axis parallel to the Z axis by an actuator (not shown). By the rotation correcting mechanism 46, the pattern formed on the projection area PA1 can be slightly rotated in the image plane.

Fig. 4 is a view showing the arrangement of the illumination area IR and the projection area PA in the present embodiment. In FIG. 4, as the projection optical system PL, three projection optical systems PL1, PL3, and PL5 having an odd number and three projection optical systems PL2, PL4, and PL6 having an even number are arranged in the Y direction.

The left diagram in FIG. 4 is a plan view of the six illumination areas IR1 to IR6 set on the cylindrical mask DM from the -Z side for each of the six projection optical systems PL1 to PL6. The right diagram in FIG. 4 is a plan view of six projection areas PA1 to PA6 on the substrate P supported by the rotating reel DR from the +Z side for each of the six projection optical systems PL1 to PL6. The symbol Xs in Fig. 4 indicates the moving direction (rotation direction) of the cylindrical mask DM or the rotating reel DR.

The illumination system IU individually illuminates the six illumination areas IR1 to IR6 on the cylindrical mask DM. In FIG. 4, each of the illumination regions IR1 to IR6 is described as an elongated ladder shape in the Y direction. Further, as illustrated in FIG. 3, when the aperture shape of the field stop 43 is trapezoidal, each of the illumination regions IR1 to IR6 may be a rectangular region including a trapezoidal region.

The odd-numbered illumination regions IR1, IR3, and IR5 have the same shape (trapezoidal or rectangular) and are arranged at a fixed interval in the Y-axis direction. The even-numbered illumination areas IR2, IR4, and IR6 are also arranged at regular intervals in the Y-axis direction. The even-numbered illumination regions IR2, IR4, and IR6 have a trapezoidal (or rectangular) shape that is symmetric with respect to the center plane p3 and the odd-numbered illumination regions IR1, IR3, and IR5.

Moreover, as shown in FIG. 4, each of the six illumination areas IR1 to IR6 is arranged in the Y direction so that the peripheral portion of the adjacent illumination area overlaps with a part.

In the present embodiment, the outer peripheral surface of the cylindrical mask DM has a pattern forming region A3 in which a pattern is formed and a pattern unformed region A4 in which a pattern is not formed.

The pattern non-formation region A4 is disposed so as to surround the pattern formation region A3 in a frame shape, and particularly has a characteristic of shielding an illumination beam that illuminates the illumination regions IR1 to IR6.

The pattern forming region A3 moves in the direction Xs as the cylindrical mask DM rotates, and each partial region in the Y-axis direction in the pattern forming region A3 passes through any of the six illumination regions IR1 to IR6. In other words, the six illumination regions IR1 to IR6 are arranged to cover the full width of the pattern forming region A3 in the Y-axis direction.

In FIG. 4, six projection optical systems PL1 to PL6 are provided corresponding to each of the six illumination areas IR1 to IR6. Therefore, each of the projection optical systems PL1 to PL6 projects a partial pattern of the mask pattern presented in the corresponding illumination regions IR1 to IR6 as shown in the right diagram of FIG. In the six projection areas PA1 to PA6 on the substrate P.

As shown in the right diagram of FIG. 4, the images of the patterns in the odd-numbered illumination regions IR1, IR3, and IR5 are respectively projected onto the projection areas PA1, PA3, and PA5 of odd-numbered lines arranged in a line in the Y-axis direction. The images of the patterns in the even-numbered illumination regions IR2, IR4, and IR6 are also projected onto the projection areas PA2, PA4, and PA6 of even numbers arranged in a row in the Y-axis direction.

The projection areas PA1, PA3, and PA5 of the odd-numbered numbers and the projection areas PA2, PA4, and PA6 of the even-numbered numbers are arranged symmetrically with respect to the center plane p3.

Each of the six projection areas PA1 to PA6 is disposed in a direction parallel to the rotation center line AX2 (Y direction), and an end portion (triangular portion of the trapezoidal shape) of the adjacent projection areas is disposed to overlap each other. Therefore, the exposure area A7 of the substrate P exposed to the six projection areas PA1 to PA6 as the rotation of the rotary reel DR is substantially the same exposure amount at any place.

Further, as shown in FIG. 1 described above, the exposure apparatus EX of the present embodiment is provided with an alignment system AM for aligning marks formed on the substrate P or formed on the rotating reel DR. The reference mark and the reference pattern are detected, and the substrate P and the mask pattern are aligned or the baseline or projection optical system is calibrated. Hereinafter, the alignment system AM will be described with reference to FIGS. 5 and 6.

Figure 5 is a view showing the arrangement of the rotating reel DR, the encoder heads EN1, EN2, and the alignment system AM1 in the XZ plane. Fig. 6 is a view showing the arrangement of the rotating reel DR, the six projection areas PA1 to PA6 set on the substrate P, and the five alignment systems AM1 to AM5 in the XY plane.

In Fig. 5, as described above, the set azimuth lines Le1, Le2 in which the encoder heads EN1, EN2 are arranged are symmetrically inclined with respect to the center plane p3 including the rotation center line AX2 and parallel to the YZ plane.

The inclination angles of the orientation lines Le1 and Le2 with respect to the center plane p3 are set to reach the projection area PA1 illustrated in FIG. 3 (or the projection areas PA1, PA3, PA5 and even numbers of the odd-numbered numbers shown in FIG. 4). The chief ray EL3 at the center of the regions PA2, PA4, and PA6) is set so that the inclination angle θs of the center plane p3 is equal.

In Fig. 5, the alignment system AM1 is composed of an illumination unit GC1 for illuminating the illumination or illumination for the mark or pattern on the substrate P or the rotating reel DR; the spectroscope GB1, which illuminates the illumination The light is guided to the substrate P or the rotating reel DR; the objective lens system GA1, which projects the illumination light onto the substrate P or the rotating reel DR, and is incident on the light generated by the mark or pattern; the photographing system GD1, which is a two-dimensional CCD, The CMOS or the like captures an image of a mark or a pattern (a bright field image, a dark field image, a fluorescent image, or the like) that is received by the objective lens system GA1 and the beam splitter GB1.

Further, the illumination light for alignment from the illumination unit GC1 is light having a wavelength region of almost no sensitivity to the photo-sensing layer on the substrate P, for example, light having a wavelength of about 500 to 800 nm.

The observation area (imaging area) of the mark or pattern of the alignment system AM1 is set to, for example, a range of about 200 μm square on the substrate P or the rotating reel DR.

The optical axis of the alignment system AM1, that is, the optical axis of the objective lens system GA1 is set in the same direction as the installation azimuth line La1 extending from the rotation center line AX1 in the radial direction of the rotary reel DR. The set azimuth line La1 is inclined by an angle θj from the center plane p3, and is set so that the inclination angle θs of the chief ray EL3 of the odd-numbered projection optical systems PL1, PL3, and PL5 is θj>θs.

Further, in the present embodiment, the encoder head EN3 similar to the encoder heads EN1 and EN2 is provided at a position facing each of the scale portions GPa and GPb of the rotary reel DR on the installation azimuth line La1. Thereby, the rotational angle position of the rotating reel DR at the moment when the alignment system AM1 samples the image of the mark or the pattern in the observation area (photographing area) can be accurately measured. (or the circumferential direction).

Further, when viewed in the XZ plane, the encoder head EN4 opposed to each of the scale portions GPa and GPb of the rotating reel DR is also provided in the direction of the X-axis orthogonal to the center plane p3.

The alignment system AM is the same as the alignment system AM1 of Fig. 5, and five are provided as shown in Fig. 6. In FIG. 6, for the sake of easy discrimination, only the arrangement of the objective lens systems GA1 to GA5 of the five alignment systems AM1 to AM5 is exemplified.

As shown in FIG. 6, the observation area (imaging area) Vw of the substrate P (or the outer peripheral surface of the rotating reel DR) of each of the objective lens systems GA1 to GA5 is arranged at a predetermined interval in parallel with the Y-axis (rotation center line AX2). direction. The optical axes of the objective lens systems GA1 to GA5 passing through the center of each observation region (imaging region) Vw are arranged in parallel with the XZ plane.

As shown in Fig. 2, the scale portions GPa and GPb are provided on both end sides of the rotary reel DR, and the width of the concave groove or the convex rim is narrowed over the entire circumference. The limit band CLa, CLb.

The width of the substrate P in the Y direction is set to be smaller than the interval between the two restriction bands CLa and CLb in the Y direction. The substrate P is in close contact with the inner region of the outer circumferential surface of the rotary reel DR, which is sandwiched by the restriction bands CLa and CLb, and is supported.

On the substrate P, as shown in the right diagram of FIG. 4 described above, the exposure area A7 exposed by each of the six projection areas PA1 to PA6 is arranged at a predetermined interval in the X direction.

There is a case where each of the exposed areas A7 of the substrate P has been patterned with a new pattern superimposed thereon and exposed. In this case, a plurality of marks (alignment marks) for alignment are formed around the exposure area A7 on the substrate P, for example, in a cross shape.

In Fig. 6, the mark Ks1 is attached to the peripheral area of the -Y side of the exposure area A7 at X. The directions are set at regular intervals, and the mark Ks5 is disposed at a fixed interval in the X direction in the peripheral region on the +Y side of the exposure area A7. The marks Ks2, Ks3, and Ks4 are lined between the two exposure areas A7 adjacent in the X direction, and are arranged in a line in the Y direction with an interval therebetween.

Among the alignment marks, the mark Ks1 is set so as to be sequentially captured during the transfer of the substrate P in the imaging region Vw of the objective lens system GA1 (alignment system AM1). The mark Ks5 is set in such a manner that it is sequentially captured during the transfer of the substrate P in the imaging region Vw of the objective lens system GA5 (alignment system AM5).

The marks Ks2, Ks3, and Ks4 are determined by capturing in each of the imaging regions Vw of the objective lens system GA2 (alignment system AM2), the objective lens system GA3 (alignment system AM3), and the objective lens system GA4 (alignment system AM4). The position in the Y direction.

In the above configuration, when the exposure region A7 on the substrate P and the mask pattern on the cylindrical mask DM are aligned relative to each other and exposed, in the imaging region Vw of each of the alignment systems AM1 to AM5, When the corresponding mark Ks1 to Ks5 enters, the photographed data is sampled, and the angular position (circumferential position) of the rotating reel DR at this time is read from the encoder head EN3 and memorized.

By performing image analysis on each of the captured data, the amount of shift in the XY directions of the respective marks Ks1 to Ks5 based on the respective imaging regions Vw is obtained.

When the relative positional relationship between the imaging region Vw of each of the alignment systems AM1 to AM5 and each of the projection regions PA1 to PA6, that is, the baseline, is accurately obtained by pre-calibration or the like, the respective markers Ks1 to Ks5 are obtained based on the obtained values. The offset amount in the XY direction and the angular position (circumferential position) of the rotating reel DR read and memorized by the encoder head EN3 can be self-disposed to the respective measured values of the two encoder heads EN1 and EN2 at the exposure position. Accurately inferring the exposed area A7 on the substrate P The positional relationship (positional relationship of dynamically changing) of each of the projection areas PA1 to PA6.

Therefore, the measured values of the two encoder heads EN1 and EN2 and the measured values of the encoder heads EN11 and EN12 on the cylindrical mask DM side are successively compared, and synchronous control is performed, whereby the mask pattern can be precisely overlapped. Exposure is performed on the exposed area A7 of the substrate P.

In the above exposure, the substrate P is as thin as about 100 μm, and a transparent film such as ITO as a base layer may be formed.

In the case of using such a substrate P, if the reflectance of the outer peripheral surface of the rotating reel DR supported thereon is relatively high, or there are a plurality of fine marks having a width of several micrometers on the surface thereof, the illumination light for exposure is rotated. The outer surface of the reel DR is reflected or scattered, and is diffracted, returning from the back side of the substrate P to the surface side, causing exposure of the photo-sensing layer to noise that is not present in the original mask pattern.

Therefore, in the outer peripheral surface of the rotating reel DR, at least the portion in contact with the exposed area A7 on the substrate P has a surface having a flatness of a submicron degree, and the reflectance can be uniformly lowered. The reflectance can be, for example, 50, 45, 40, 35, 30, 25, 20, 15, 10 or 5% or less, preferably 20% or less, with respect to the illumination light for exposure.

Furthermore, the above numerical values are examples, and the present invention is not limited thereto.

Hereinafter, the structure of the outer peripheral surface of the rotating reel DR will be described with reference to FIGS. 7 and 8. Fig. 7 is a view showing a configuration of a substrate P that is in contact with the outer peripheral surface of the rotating reel DR and a reflection with respect to the imaging light beam EL2 (illumination light IE0) for exposure and the illumination light ILa for alignment. Fig. 8 is a view showing a cross-sectional structure of the outer peripheral surface of the rotary reel DR.

In Fig. 7, an imaging light beam EL2 (illumination light IE0) traveling along the principal ray EL3 is projected onto the photosensitive layer Pb3 formed on the surface of the substrate P of the thickness Tp. When the underlying layer Pb2 of the photo-sensing layer Pb3 is made of a material having high light transmittance such as ITO, the illumination light IE1 transmitted through the underlying layer Pb2 The base material Pb1 of the substrate P facing downward is hardly attenuated with respect to the original illumination light IE0.

The base material Pb1 of the substrate P is a transparent resin film such as PET or PEN, and has a thickness of 100 μm or less. Therefore, when the wavelength region of the illumination light IE0 (IE1) is 350 nm or more, the base material Pb1 is opposed to the illumination light IE1. Has a relatively large transmittance (80% or more).

Therefore, the illumination light IE1 that has passed through the base material Pb1 reaches the outer circumferential surface DRs of the rotating reel DR. When the reflectance of the outer peripheral surface DRs is not zero, the reflected light (including the scattered light and the diffracted light) IE2 is generated from the outer peripheral surface DRs by the illumination light IE1 transmitted through the base material Pb1, and the base material Pb1 and the base layer Pb2 are used. In order, return to the photo sensing layer Pb3. The reflected light IE2 is not the original imaging beam EL2 for patterning, and thus becomes noise and causes unnecessary exposure to the photosensitive layer Pb3.

One of the noises is, for example, a defocused image of a pattern image created by the imaging beam EL2.

In the case of the projection optical system PL1 (~PL6) of FIG. 3 described above, the resolution (R) and the depth of focus (DOF) are roughly determined by the wavelength λ of the illumination light for exposure and the numerical aperture NA. For example, in a projection optical system using illumination light having a wavelength of 365 nm (i-ray) and a resolution (R) of an imageable line width of 3 μm, when the k-factor is set to about 0.35, the depth of focus (DOF) is 70 μm. about.

When the thickness of the base material Pb1 of the substrate P is 100 μm, the imaging light beam EL2 is projected in a slightly defocused state on the outer peripheral surface DRs of the rotating reel DR, and the reflected light IE2 reflected on the outer peripheral surface DRs is further on the surface of the photo-sensitive layer Pb3. Become a defocused image beam.

Therefore, in the photo-sensing layer Pb3, the blurred image of the pattern image itself is also projected and superimposed on the pattern image of the imaging light beam EL2 whose focal length coincides. That is, there is a possibility that an undesired unnecessary pattern image (such as a blurred image) is reflected in the photosensor layer Pb3.

On the other hand, regarding the mark detection by the alignment systems AM1 to AM5, For example, when a material having a high reflectance, for example, aluminum (Al) or the like, is used as the material of the alignment marks Ks1 to Ks5 formed on the base material Pb1 of the substrate P, the illumination of the marks Ks1 to Ks5 is irradiated. The intensity of the reflected light ILb of the light ILa is relatively large, so that good mark observation and detection can be performed.

However, when the reflectance of the marks Ks1 to Ks5 is not high, the illumination light ILa passing through the transparent region around the marks Ks1 to Ks5 reaches the outer peripheral surface DRs of the rotating reel DR, where the reflected light and the mark Ks1 are received. Since the reflected light ILb of ~Ks5 is taken by the imaging element together, there is a case where the contrast of the image of the marks Ks1 to Ks5 is lowered.

According to the above, the outer circumferential surface DRs of the rotating reel DR in the present embodiment has about 50, 45, 40, 35, 30, 25, 20, 15, 10 or 5% or less with respect to the illumination light IE0 for exposure. The reflectance is formed in a manner.

Therefore, in the rotary reel DR of the present embodiment, a base made of chromium (Cr) or copper (Cu) is plated on the surface of a cylindrical substrate DR1 made of iron (SUS) or aluminum (Al). Layer DR2 (thickness Td2). After optically grinding the surface of the base layer DR2 to sufficiently reduce the local surface roughness, a top layer DR3 composed of chromium oxide (Cr ₂ O ₃ ) or diamond-like carbon (DLC) is formed thereon (thickness Td3) ).

The thickness Td2 of the underlayer DR2 can be arbitrarily set within a range of about several hundred nm to several μm. However, in order to adjust the reflectance of the outer peripheral surface DRs, the thickness Td3 of the top layer DR3 has a certain condition range.

Therefore, when the base layer DR2 is made of chromium (Cr) and the top layer DR3 is made of chromium oxide (Cr ₂ O ₃ ), the wavelength of the reflectance of the outer peripheral surface DRs is determined by referring to FIG. 9 as the thickness Td3 of the top layer DR3. The characteristics (spectral reflectance) will be described.

9 is a graph showing a simulation result of a case where the refractive index n of chromium oxide is 2.2 and the absorption coefficient k is 0. The vertical axis represents the reflectance (%) of the outer peripheral surface DRs, and the horizontal axis represents the wavelength (nm). Fig. 9 shows characteristics of six kinds of spectral reflectances in which the thickness Td3 of the top layer DR3 composed of chromium oxide is changed between 0 and 150 nm at every 30 nm.

For example, when the thickness Td3 of the ruthenium oxide top layer DR3 is about 30 nm, the reflectance can be 20% or less (15% or less in terms of simulation) over the entire wavelength band of 350 nm to 500 nm. In this case, when the wavelength of the illumination light for alignment Ia is about 500 nm with respect to a reflectance of about 7% with respect to a wavelength of 436 nm (light for g-beam exposure), the reflectance is about 12%.

In addition, when the wavelength of the exposure light (illumination light IE0) is 405 nm (a laser for a blue semiconductor body near the h-ray, etc.), the thickness Td3 of the top layer DR3 of the chromium oxide is set to about 120 nm, and the exposure can be performed. The wavelength of light is kept at a minimum value and the illumination light ILa for alignment with respect to about 500 nm has a reflectance of about 40%.

On the other hand, when the thickness Td3 of the ruthenium oxide top layer DR3 is about 60 nm or 150 nm, the reflectance of the exposure light (illumination light IE0) with a wavelength band of 350 to 436 nm is increased to about 50%, and the wavelength is 500 nm. The reflectance of the alignment illumination light ILa is 40% or less.

When the thickness Td3 of the ruthenium oxide top layer DR3 is set to about 90 nm, the reflectance of the outer peripheral surface DRs can be reduced to 30% or less with respect to ultraviolet light having a wavelength band shorter than 350 nm, and the outer peripheral surface DRs can be relatively The reflectance of the illumination light ILa for alignment at a wavelength of 500 nm can be increased to about 60%.

Judging from the simulation result of Fig. 9, by controlling the top layer composed of chromium oxide The thickness Td3 of the DR3 can arbitrarily set the reflectance of the outer peripheral surface DRs with respect to the illumination light for alignment and the illumination light for exposure between about 5% and 50%, and can be set lower than the top layer DR3 which is not provided with chromium oxide. (Td3 = 0 nm) and only the reflectance in the case of the underlying layer DR2 composed of simple chromium is set.

As described above with reference to Fig. 7, when it is desired to suppress the reflectance of the outer peripheral surface DRs with respect to the exposure illumination light (IE0) or the alignment illumination light (ILa) to a low level, for example, by chrome oxide The thickness Td3 of the top layer DR3 of the composition is set to 30 nm, and a reflectance of about 15% or less can be obtained over the entire wavelength range of 350 nm to 500 nm.

The simulation of Fig. 9 is an example in which a chromium layer is formed on a substrate DR1 of a rotating reel DR, and a chromium oxide layer is formed thereon to have a controlled thickness, and the reflectance is adjusted, but the composition is not limited thereto.

For example, the material of the underlayer DR2 may be aluminum (Al), copper (Cu), silver (Ag), gold (Au) or the like in addition to chromium (Cr).

As the material of the top layer DR3 on the base layer DR2, the above-mentioned chromium oxide, such as a dielectric having a high refractive index capable of controlling relative reflectance, titanium oxide (TiO), zircon, cerium oxide, diamond-like carbon can be similarly utilized. A metal compound such as an oxide or a nitride such as (DLC).

Further, in general, the illumination light for exposure (IE0) is an ultraviolet ray having a wavelength of 436 nm or less (g ray) or less, and the illumination light for alignment (ILa) is a wavelength band of the visible light region to the infrared ray region where the photosensitive layer (Pb3) is not exposed. Light.

Therefore, the base layer DR2 can be formed by a metal material having a low light reflectance with respect to the ultraviolet region as in copper (Cu) and a high light reflectance with respect to the infrared wavelength region, and the illumination light for alignment can also be used. There is a difference in reflectance between each of (ILa) and exposure illumination light (IE0).

As the underlayer DR2, copper (Cu) is thickly deposited by plating, and is 0.5. The thickness of μm and the thickness of 2 μm form diamond-like carbon (DLC) as the top layer DR3, and the reflectance Re of the ultraviolet light (exposure light) with respect to the wavelength of 355 nm and the light (aligned light) with respect to the visible light region of the wavelength of 450 nm to 650 nm are measured. Reflectivity Rv. The results are shown in Table 1.

As described above, by suppressing at least the reflectance of the outer peripheral surface DRs of the rotating reel DR with respect to the exposure illumination light (IE0), it is possible to eliminate the problem that an unnecessary pattern image (blurred image) is reflected during exposure.

[Second Embodiment]

Since the exposure apparatus according to the first embodiment is a so-called multi-lens method, the mask pattern image formed in each of the projection areas PA1 to PA6 of the plurality of projection optical systems PL1 to PL6 must be in the Y direction (or the X direction). Bonding and good alignment (overlap) with the substrate pattern on the substrate P.

Therefore, it is necessary to perform calibration for suppressing the bonding accuracy of the plurality of projection optical systems PL1 to PL6 within the allowable range. Further, the relative positional relationship between the observation (imaging) region Vw of the alignment systems AM1 to AM5 with respect to the projection regions PA1 to PA6 of the projection optical systems PL1 to PL6 must be precisely determined by the baseline management. Calibration is also necessary for this baseline management.

In the calibration for confirming the bonding accuracy of the plurality of projection optical systems PL1 to PL6 and the calibration for managing the alignment of the alignment systems AM1 to AM5, it is necessary to support the substrate P. A reference mark or a reference pattern is provided on at least a part of the outer peripheral surface of the rotating reel DR.

A flat glass plate is placed on a flat substrate holder to move the substrate holder two-dimensionally, and in the prior exposure apparatus for performing projection exposure, a portion for the periphery of the substrate holder that is not covered by the glass plate is provided for calibration. The fiducial mark or reference pattern is moved to the objective lens of the projection optical system or the alignment system during calibration.

However, in the state of the exposure apparatus according to the first embodiment described above, it is necessary to curl the substrate P in one of the outer peripheral surfaces of the rotary reel DR (the position of the projection areas PA1 to PA6) during most of the operation time. Such a reference mark or a reference pattern is provided on a portion of the outer circumferential surface of the rotating reel DR that is in contact with the substrate P.

Therefore, in the present embodiment, as shown in FIG. 10, a case where the rotating reel DR having the reference mark or the reference pattern on the outer peripheral surface is used will be described.

Fig. 10 is a perspective view of a rotary reel DR in which lathe machining is integrally performed with a shaft portion Sf2 coaxial with the rotation center line AX2, and a scale for encoder measurement is provided in the same manner as the configuration shown in Figs. 2 and 6 described above. Parts GPa, GPb and restriction bands CLa, CLb.

Further, in the present embodiment, a plurality of line patterns RL1 inclined at +45 degrees with respect to the Y-axis and relative to Y are provided over the entire circumference of the outer circumferential surface of the rotating reel DR by the restriction bands CLa and CLb. The plurality of line patterns RL2 whose axes are inclined at -45 degrees are repeatedly engraved with the obtained mesh-shaped reference pattern (which can also be used as a reference mark) RMP at a fixed interval (period) Pf1, Pf2.

By rotating the rotating reel DR, the outer peripheral surface, that is, the entire circumference sandwiched by the restriction belts CLa and CLb, must be in contact with the substrate P, so that the portion where the substrate P is in contact with the outer peripheral surface of the rotating reel DR is not generated. The reference pattern RMP is a tilt pattern (a diagonal grid pattern) in which the entire surface is uniform, such as the frictional force caused by the frictional force or the tension of the substrate P.

By slanting the line patterns RL1, RL2 with respect to the transport direction (X direction) of the substrate P and the width direction (Y direction) of the substrate P, the directivity such as frictional force or tension is relaxed.

However, the line patterns RL1 and RL2 do not have to be inclined by 45 degrees, and may be a vertical and horizontal mesh pattern in which the line pattern RL1 is parallel to the Y axis and the line pattern RL2 is parallel to the X axis.

Further, it is not necessary to make the line patterns RL1 and RL2 intersect at 90 degrees, and the rectangular area surrounded by the two adjacent line patterns RL1 and the adjacent two line patterns RL2 may be a rhombic angle other than a square (or a rectangle). The line patterns RL1, RL2 are crossed.

Further, the distances Pf1 and Pf2 between the line patterns RL1 and RL2 shown in FIG. 10 are the expected fluctuation amounts of the baseline of the alignment system (the relative positional relationship between the projection area PA of the projection optical system PL and the imaging region Vw), or The amount of fluctuation between the plurality of projection optical systems PL1 to PL6 in the multi-lens mode may be twice or more the minimum of the expected fluctuation amount.

For example, when the maximum value of the fluctuation amount is 10 μm, the pitches Pf1 and Pf2 differ depending on the line width LW (5 to 20 μm) of the line patterns RL1 and RL2, and may be performed as long as it is about 30 to 50 μm. Accurate calibration.

The line width LW of each of the line patterns RL1, RL2 is determined by the limit which can be made thinner according to the accuracy (resolution) of the drawing device in which the line patterns RL1, RL2 are engraved, etching conditions, etc., preferably by an alignment system. The range in which AM1 to AM5 stably perform image analysis is as thin as possible.

In the case where the reference pattern RMP is detected in the imaging (observation) region Vw of each of the alignment systems AM1 to AM5, and the baseline measurement or the like is performed, the distances Pf1 and Pf2 between the line patterns RL1 and RL2 are set to about 50 μm. Therefore, the intersection of the line patterns RL1, RL2 is present in the Y direction and the X direction is about 70 μm, as long as the imaging (observation) area Vw is 200 μm square. In addition, it is possible to capture a predetermined one of the intersection points and perform image analysis of the positional shift.

Fig. 11 is a cross-sectional view showing a portion of the reference pattern RMP of the line patterns RL1, RL2 broken along the X-axis shown in the circle in Fig. 10.

In the present embodiment, as in the case of Fig. 8 of the first embodiment, the base layer DR2 of chromium or copper is deposited thickly on the surface of the cylindrical substrate DR1 of iron or aluminum by plating. Thereafter, the surface of the underlying layer DR2 is optically polished to improve flatness, and then a photoresist is applied over the entire periphery of the underlying layer DR2, and the reference pattern RMP of the line patterns RL1, RL2 is exposed on the underlying layer DR2 by a drawing device. .

At this time, by also drawing the grid lines of the scale portions GPa and GPb, the relative positional relationship (particularly, the positional relationship in the circumferential direction) of the reference pattern RMP and the scale portions GPa and GPb can be fixed.

Thereafter, a portion of the photoresist corresponding to the line patterns RL1, RL2 is removed by development of the photoresist, and the exposed underlayer DR2 (chromium or copper) is etched to a predetermined depth to have a predetermined thickness on the surface thereof. Stack top layer DR3 (chromium oxide or DLC).

In the case of chromium oxide, the thickness of the top layer DR3 is set based on the characteristics of the above-described FIG. The step amount ΔDP of the line patterns RL1 and RL2 (concave portions) of the finally formed top layer DR3 is compared with the design value by measurement, and is confirmed to be within a predetermined allowable range.

The reference pattern RMP of the line patterns RL1 and RL2 can also suppress the reflectance of the exposure illumination light with respect to the surface thereof to 20% or less as in the first embodiment. In this case, even if the illumination light for exposure is reflected by the reference pattern RMP, the energy is not exposed to the photosensitive layer Pb3 as an unnecessary pattern, and thus there is substantially no problem.

Further, the line patterns RL1 and RL2 are formed by etching as shown in FIG. 11, and a negative-type photoresist may be used to form the line patterns RL1 and RL2 in the form of convex portions.

Further, the reference patterns RMP of the line patterns RL1 and RL2 are formed in the form of irregularities on the outer circumferential surface DRs of the rotating reel DR. Therefore, if the step amount of the concavities and convexities is a predetermined condition, the reference pattern RMP as a whole can be compared with the exposure. The phase pattern of the reflection intensity is suppressed by both the illumination light and the illumination light for alignment.

Therefore, the step amount ΔDP shown in Fig. 11 can be set under the following conditions.

Here, when the center wavelength of the illumination illumination light IE0 is λ1, the center wavelength of the illumination illumination light ILa is λ2, and m is an arbitrary integer including zero (m=0, 1, 2...). Then, regarding the center wavelength λ1 of the illumination light IE0 for exposure, the step amount can be set in the range of λ1‧(m+1/8)/2≦ΔDP≦λ1‧(m+7/8)/2(3) △ DP. Further, the step amount ΔDP can be set in the range of λ1‧(m+1/4)/2≦ΔDP≦λ1‧(m+3/4)/2(4).

On the other hand, regarding the center wavelength λ2 of the illumination light for alignment ILa, the wavelength λ1 in the above equations (3) and (4) may be replaced by λ2 to determine the range of the step amount ΔDP.

In this case, the range of the step amount ΔDP obtained for the wavelength λ1 of the illumination light for exposure is compared with the range of the step amount ΔDP obtained for the wavelength A2 of the illumination light for alignment, and the range of both is used. When the overlap or the approach is set to the optimum step amount ΔDP, the intensity of the reflected light generated from the reference pattern RMP can be reduced with respect to both the exposure illumination light and the alignment illumination light.

In other words, the step amount ΔDP satisfying or approximating the above equations (3) and (4) may be set with respect to both the center wavelength λ1 of the illumination light for exposure and the center wavelength λ2 of the illumination light for alignment.

As described above, in the first embodiment or the second embodiment, the rotating reel DR is formed. The cylindrical substrate DR1 has a relatively large outer peripheral layer layer DR2 and a top layer DR3 to adjust the reflectance, but may have a laminated structure of the above number of layers.

For example, in order to reduce the weight of the rotating drum DR, the substrate DR1 may be cut from an Al (aluminum) block, and the outer surface of the substrate DR1 may be plated thickly for flatness (roundness or surface roughness). After the relatively hard chromium (Cr) is processed, copper (Cu) plating as the underlying layer DR2 shown in FIG. 8 or FIG. 11 is further performed thereon, and a predetermined thickness is laminated thereon as the top layer DR3. DLC.

In this case, the lattice lines of the reference pattern RMP (line patterns RL1, RL2) or the scale portions GPa, GPb are engraved on the hard chrome layer or the copper underlying layer DR2.

[Third embodiment]

In the exposure apparatus of the above embodiment, the mask pattern is scanned and exposed on the substrate P by using the cylindrical mask DM, and the rotating reel DR can be used even in an exposure apparatus that does not use a mask, that is, an exposure apparatus such as a pattern generator. The substrate P is supported and patterned for exposure. An example of such an exposure apparatus will be described with reference to Figs. 12 and 13 .

Fig. 12 is a front view showing the main part of the exposure apparatus (pattern drawing apparatus) of the present embodiment in the XZ plane, and Fig. 13 is a plan view showing the configuration of Fig. 12 in the XY plane.

In the present embodiment, as shown in FIG. 13, the scanning lines LL1, LL2, LL3, and LL4 of a straight line which are scanned at a high speed in the Y direction (the direction in which the center line AX2 extends) are scanned at a high speed (for example, a diameter of 4 μm). The exposed area A7 adhered to the substrate P on the outer peripheral surface of the rotating reel DR is patterned. Since each of the scanning lines LL1 to LL4 has a relatively short scanning length in the Y direction, it is arranged in a zigzag manner symmetrically with respect to the center plane p3.

Among the scanning lines LL1 to LL4, the odd-numbered scanning lines LL1 and LL3 are arranged on the -X side with respect to the center plane p3, and the even-numbered scanning lines LL2 and LL4 are arranged on the +X side with respect to the center plane p3.

The reason for this is that, as shown in FIG. 12, the spatial interference of the odd-numbered rendering modules UW1 and UW3 along the scanning lines LL1 to LL4 and the even-numbered rendering modules UW2 and UW4 is avoided, and the center is opposed to the center. Face p3 is symmetrically arranged.

In the present embodiment, the encoder measuring scale disk SD is individually attached to the shaft portion Sf2 of the rotating reel DR. The scale portion GPa (and GPb) engraved on the outer circumference of the scale circle LSD is measured by the encoder head EN1 disposed on the set orientation line Le1 and the encoder head EN2 disposed on the set orientation line Le2.

Further, an encoder head EN3 for reading the scale portion GPa (and GPb) is also disposed at a position where the alignment line La1 of the alignment systems AM1 to AM5 of the above-described FIGS. 5 and 6 is disposed.

As shown in FIG. 12, since the four drawing modules UW1 to UW4 have the same configuration, a detailed configuration of the drawing module UW1 will be described as a representative.

The drawing module UW1 includes an AOM (Acousto-Optic Modulator) 80 that receives a light beam LB from an external ultraviolet laser light source (continuous or pulsed), and switches the light beam LB to the substrate P at a high speed. Non-projection; a rotating polygon mirror 82 for scanning a light beam LB from the AOM 80 along the scanning line LL1 on the substrate P; a curved mirror 84; an f-θ lens system 86; and a photovoltaic element 88.

The light beam BS1 projected onto the substrate P via the f-θ lens system 86 is scanned in the Y direction, and the CAD information based on the pattern to be drawn is modulated by the On/Off AOM 80, and the pattern is drawn on the substrate P. On the sensing layer. By making the light beam BS1 along the scanning line LL1 The Y-direction scanning is synchronized with the movement of the substrate P in the X direction caused by the rotation of the rotating reel DR, and the partial exposure pattern corresponding to the scanning line LL1 in the exposure area A7.

Because of this drawing method, when viewed in the XZ plane as shown in FIG. 12, the axis of the light beam BS1 reaching the substrate P becomes the direction in which the orientation line Le1 is arranged. In this case, the same applies to the light beam BS2 projected from the even-numbered drawing module UW2, and the axis of the light beam BS2 reaching the substrate P becomes the direction in which the orientation line Le2 is arranged.

As described above, when the patterns are drawn in the exposure area A7 by the four scanning lines LL1 to LL4, the accuracy of the joint between the scanning lines LL1 to LL4 is important. In the case of FIG. 13, the exposure area A7 first starts exposure of the area corresponding to the odd-numbered scanning lines LL1, LL3, and starts from the position where the substrate P travels in the circumferential direction by the distance ΔXu from the position, starting with an even number. The exposure of the area corresponding to the scanning lines LL2, LL4.

Therefore, by accurately setting the drawing start point and the drawing end point of the spot of each of the scanning lines LL1 to LL4, the entire pattern formed in the exposure area A7 can be favorably joined.

In the above-described pattern drawing device, the rotating reel having the structure shown in Fig. 8 of the first embodiment or the rotating reel having the structure shown in Figs. 10 and 11 of the second embodiment is also used. DR, which reduces the unnecessary pattern of noise, and achieves high-precision patterning.

In the above-described embodiments, the support device for the substrate P may have a flat support surface other than the cylindrical rotary drum DR, and may have a large curvature in a direction in which the substrate P is conveyed. The shape of the support surface. Alternatively, the invention can be applied in the same manner even if the gas layer of the air bearing is formed on the support surface of the support device, and the supporting means supported by the gas layer to slightly float the substrate.

Further, in each of the above-described embodiments, Cu (copper), Cr (chromium), and Cr ₂ O ₃ (trivalent chromium oxide) are exemplified as the metal thin film of the underlayer DR2 and the top layer DR3, but are not limited thereto. This can also be CrO (divalent chromium oxide). For example, the underlayer DR2 formed on the substrate DR1 (SUS, Al, etc.) may be Cu, and as the top layer DR3 deposited on the underlayer DR2, CrO may be formed by plating, vapor deposition, or sputtering. membrane.

Further, the drilled carbon (DLC) formed as a film of the top layer DR3 of each of the above embodiments is composed of carbon atoms, and is an amorphous structure and/or an amorphous structure containing crystals, and is mixed with a sp2 bond of graphite and The sp3 bond of diamond acts as a bond between carbon atoms.

DLC is formed as a hard film, and its properties are distinguished by the fact that the amount of hydrogen and the electron orbital of the crystallized crystal are close to or close to the graphite.

[Fourth embodiment]

Further, the form of the reference pattern RMP formed on the outer circumferential surface DRs of the rotating reel DR shown in FIG. 10 is such that strong stray light is not generated from the reference pattern RMP by the irradiation of the exposure light transmitted through the substrate P. (unnecessary reflection of light) can be any shape.

Fig. 14 is a perspective view showing a modification of the reference pattern RMP formed on the outer circumferential surface DRs of the rotating reel DR as a fourth embodiment, and the same members as those of the rotating reel DR in Fig. 10 are attached. symbol.

In Fig. 14, the both ends of the direction (Y-axis direction) in which the shaft portion Sf2 of the rotating reel DR extends, the scale circle for encoder measurement is fastened by a plurality of screws FB in the same manner as in Figs. 12 and 13 described above. Disk SD. In the present embodiment, the diameters of the scale portions GPa and GPb formed on the outer circumferential surface of the scale disk SD (or the radius from the center line AX2) are associated with the rotating reel DR. The diameter of the outer peripheral surface DRs (or the radius from the center line AX2) is set to be the same.

On the outer circumferential surface DRs of the rotating reel DR, a line pattern RLa extending linearly in a direction parallel to the rotation center line AX2 (Y-axis direction) and two lines extending in a circumferential direction (in a plane parallel to the XZ plane) are two. The line patterns RLb and RLc are formed as the reference pattern RMP.

The line pattern RLa is arranged at an interval of 45° in the circumferential direction in the case of FIG. The two line patterns RLb and RLc are arranged at a fixed interval in a direction (Y-axis direction) parallel to the rotation center line AX2. The angular interval η in the circumferential direction of the line pattern RLa is not limited to 45°, and may be arbitrary.

The fixed interval corresponds to the interval between the imaging regions Vw of the alignment systems AM1 to AM5 shown in FIG. 6 in the Y-axis direction. In other words, the line patterns RLa and the intersection portions ALA of the two line patterns RLb and RLc are arranged in the respective imaging regions Vw of the alignment systems AM1 to AM5 in order to rotate the rotation reels DR, and the respective line patterns RLa and RLb are arranged. RLc, the line pattern portion of the intersection ALA is detected as the reference pattern RMP.

As shown in FIG. 6 described above, the marks Ks1 to Ks5 are formed on the substrate P. Therefore, at least one of the two line patterns RLb and RLc is shifted so as not to overlap with the positions of the marks Ks1 to Ks5 in the Y-axis direction. Configuration.

As an example, when the line widths LW of the two line patterns RLb and RLc are set to 15 μm, the distance in the Y-axis direction is set to 150 μm, and each of the marks Ks1 to Ks5 is located between the two line patterns RLb and RLc. According to the mode setting, each of the alignment systems AM1 to AM5 can monitor the line patterns RLb and RLc together with the marks Ks1 to Ks5 in the imaging region Vw.

Further, when the blank portion (the transparent region in which the marks Ks2 to Ks4 are disposed) between the two exposure regions A7 disposed adjacent to the transport direction on the substrate P shown in FIG. 6 is equal to or larger than a predetermined size, It is also possible to make a line graph formed by the outer peripheral surface DRs of the rotating reel DR The intersection ALA formed by the cases RLa, RLb, and RLc is reliably disposed under the blank portion.

For example, if the diameter of the outer circumferential surface DRs of the rotating reel DR is Rdd, and the angular distance η of the circumferential direction of the line pattern RLa along the outer circumferential surface DRs is η using the angular interval η of the circumferential direction of the line pattern RLa described above, With LK=π. Rdd. (η/360)...(5) indicates.

When the size of the substrate P in the blank portion between the two exposure regions A7 in the longitudinal direction (transport direction) is LU and is set so as to satisfy the condition of LU>LK, at least one line pattern RLa can be disposed. Inside the blank portion of the substrate P.

As described above, in the present embodiment, the line patterns RLa, RLb, and RLc extending linearly in the longitudinal direction (transport direction) and the short-side direction (Y-axis direction) of the substrate P constitute the reference pattern RMP, so that it is possible to shoot along the edge. The direction of the horizontal scanning line or the vertical scanning line of the component directly measures the two-dimensional position of the intersection ALA appearing in each of the imaging regions V1 to AM5 of the alignment system AM1 to AM5, thereby shortening the operation time of the image processing.

[Fifth Embodiment]

Further, when the circumferential surface DRs of the rotating reel DR is formed with the line patterns RLa, RLb, and RLc as shown in FIG. 14, the wiring pattern or the pixel pattern of the exposure region A7 formed on the substrate P is aligned.

In this case, for example, even if the reflectance of the outer peripheral surface DRs with respect to the exposure light is reduced by the underlayer DR2 and the top layer DR3 (see FIG. 8 described above), a slight difference occurs in the edge portions of the line patterns RLa, RLb, and RLc. Scattered light or the like is also distributed in the direction of the line patterns RLa, RLb, RLc. Alignment with the arrangement direction of the wiring pattern or the pixel pattern of the exposure region A7 formed on the substrate P may become a problem.

Therefore, in the present embodiment, as shown in FIG. 15, in order to reduce a small amount of scattered light or the like which may be generated at the step edge portion of the line patterns RLa, RLb, RLc, a line pattern formed on the outer peripheral surface DRs of the rotating reel DR is formed. RLa, RLb, and RLc are recessed portions of the line width LW, and the recessed portion is filled with a material PI that absorbs ultraviolet rays (exposure light).

The material PL is a coating containing an ultraviolet absorber (hardened after drying), absorbs scattered light or diffracted light generated at the edge of the step, and reduces the amount of scattered light or diffracted light reaching the surface side of the substrate P. As an example of the ultraviolet absorber, commercially available under the trade name Uvinul (registered trademark) or TINUVIN (registered trademark) of the BASF-SE company, there is an alignment illumination that absorbs the light in the ultraviolet wavelength region but hardly absorbs the visible light wavelength region. The characteristics of light.

As described above, in the present embodiment, the line pattern constituting the reference pattern RMP is formed by the concave portion, and the ultraviolet absorbing material is filled in the concave portion. Therefore, it is possible to further reduce the reflection from the outer circumferential surface DRs of the rotating reel DR by the irradiation of the exposure light. Stray light.

Further, the method of filling the concave portion of the outer peripheral surface DRs with the ultraviolet absorbing material can be similarly applied to the line patterns RL1 and RL2 shown in FIGS. 10 and 11 described above. Further, the coating material containing such an ultraviolet absorber can also be used to maintain irregularities such as damage or depression attached to the peripheral surface DRs in contact with the substrate P.

[Sixth embodiment]

Next, a configuration in which the substrate supporting device described above with reference to FIGS. 2, 7, 10, and 14 is applied to the pattern exposure apparatus without a mask will be described based on FIG.

In Fig. 16, the substrate supporting device is rotated by the tension adjusting rollers RT1, RT2, the shaft portion Sf2, and the rotating drum DR of the substrate P, the scale disk SD, and the encoder heads EN1, EN3, similarly to the above-described respective embodiments. And so on. The alignment system AM1 (and AM2 to AM5) is similarly composed of the objective lens system GA1, the beam splitter GB1, the illumination unit GC1, and the imaging system GD1.

The exposure unit includes a light source 100 that generates illumination light for exposure (exposure light), and an illumination system 101 that is a DMD (Digital Micromirror Device, digital micromirror device, registered trademark) in which a plurality of movable micromirrors are two-dimensionally arranged. 104 is uniformly illuminated with uniform illumination; the lens system 105 is condensed by the mirror 103, the micro-mirrors of the DMD 104 for exposure light; MLA (Micro-Lens Array) 106, which will a plurality of microlenses are two-dimensionally arranged; a field stop 107 conjugated to a surface of the substrate P wound around the rotating reel DR; and a projection optical system PL for use by each of the MLAs 106 The microlenses are formed by lens systems 108 and 109 which are formed on the substrate P by the spots formed in the apertures of the field stop 107.

Further, the pupil plane of the projection optical system PL of the present embodiment is provided with a beam splitter 110 that can be inserted and removed in a direction (Y-axis direction) orthogonal to the plane of the paper of FIG.

When the beam splitter 110 is inserted, the exposure light from the MLA 106 is projected onto the surface of the substrate P or the outer circumferential surface DRs of the rotating reel DR via the lens system 108 of the projection optical system PL, the spectroscope 110, and the lens system 109. A portion of the reflected light that is reflected and returned by the surface of the substrate P or the outer peripheral surface DRs may be guided to the monitor system 112 including a collecting lens or a photovoltaic element.

The monitor system 112 is configured as a light quantity monitor or an alignment monitor for measuring the amount of reflected light (exposure light) from the surface or the outer peripheral surface DRs of the substrate P, and determining whether The substrate P is given an appropriate exposure amount (illuminance), which The alignment monitor collects light information (optical image, diffracted light, and the like) about the reference patterns Ks1 to Ks5 on the substrate P or the reference pattern RMP on the outer peripheral surface DRs based on the reflected light (exposure light).

In the unmasked pattern exposure apparatus of FIG. 16, information based on pattern drawing data (CAD data), substrate P based on measurement signals from the encoder head EN1 (or EN3), or alignment is performed. The position information of the marks Ks1 to Ks5 of the substrate P measured by the system AM1 (AM2 to AM5) is switched at a high speed to switch the angles of the respective micromirrors of the DMD 104.

Thereby, the state in which the exposure light reflected by each micromirror is incident on the corresponding microlens of the MLA 106 is switched, and the state in which the microlens is not incident is switched. Therefore, the pattern according to the drawing data is exposed (drawn) on the substrate P.

The pattern exposure apparatus of this embodiment shown in FIG. 16 may be provided with a plurality of exposure units in a direction (Y-axis direction) parallel to the rotation center line AX2 under the conditions shown in FIGS. 2 and 4 described above. The exposure processing of the substrate P having a large width in the Y-axis direction is dealt with. In this case, it is preferable that the aperture shape of the field stop 107 in FIG. 16 is the same as the shape of each of the exposure areas PA1 to PA6 in FIG. 4, and the plurality of spots formed by the MLA 106 are fixed at a fixed pitch. Arranged within the aperture of the ladder shape.

Further, the predetermined focal plane of the plurality of spots formed on the emission side of the MLA 107 may be curved in a cylindrical shape in the same manner as the outer circumferential surface DRS of the rotating reel DR, for example, the MLA 106 in FIG. In the case, the focal lengths are slightly different between the microlenses arranged in the X direction in the respective microlenses.

AX2‧‧‧Rotating Center Line

CLa, CLb‧‧‧Restricted belt

DR‧‧‧Rotary reel

DRs‧‧‧ rotating drum outer peripheral surface

GPa, GPb‧‧‧ ruler department

LW‧‧‧ line width

Pf1, Pf2‧‧‧ spacing

RL1, RL2‧‧‧ line pattern

RMP‧‧‧ reference pattern

Sf2‧‧‧Axis

Claims (18)

A substrate supporting device for processing a sheet substrate by irradiating a first light to a sheet substrate having light transparency and for processing the sheet substrate, comprising: a cylindrical base a material having a cylindrical surface that is curved from a predetermined radius of a predetermined center line and a coaxial portion disposed coaxially with the center line and axially supported in the processing device for the sheet substrate The outer peripheral surface is supported; a film body formed on the outer peripheral surface of the cylindrical substrate with a predetermined thickness, and a support surface that is in contact with the back surface of the sheet substrate; and a reference pattern formed by a small step a portion of the film; the reflectance of the first light on the support surface is set to be smaller than the second light having a wavelength different from the first light for detecting the reference pattern Reflectivity. The substrate supporting device according to claim 1, wherein the cylindrical substrate is made of a metal material mainly composed of iron or aluminum; and the film body is formed on the cylindrical substrate. A multilayer film of two or more layers on the outer peripheral surface, and the film thickness thereof is set such that the reflectance of the first light on the support surface is 20% or less. The substrate supporting device of claim 2, wherein the multilayer film is formed on a base layer on the outer peripheral surface of the cylindrical substrate and formed on the base layer to form a top layer of the support surface. a layer structure; the thickness of the base layer is set to be greater than the thickness of the top layer. The substrate supporting device of claim 3, wherein the base layer is any one of chromium (Cr), copper (Cu), aluminum (Al), silver (Ag) or gold (Au); Any of chromium oxide (Cr ₂ O ₃ , CrO), titanium oxide (TiO), zircon, cerium oxide, diamond-like carbon (DLC) or diamond-like carbon (DLC). The substrate supporting device of claim 4, wherein the base layer is made of chromium (Cr); and the top layer is made of chromium oxide (Cr ₂ O ₃ , CrO) having a thickness of 30 nm to 150 nm. The substrate supporting device of claim 4, wherein the base layer is made of copper (Cu); and the top layer is made of diamond-like carbon (DLC) having a thickness of 0.5 μm or more. The substrate supporting device according to any one of claims 3 to 6, wherein the reference pattern is formed on the base layer with a slight step. The substrate supporting device according to any one of claims 1 to 4, wherein, when the center wavelength of the first light is λ1, m is an arbitrary integer including zero, and the reference pattern has a small order. When the difference is ΔDP, it is set to the range of λ1‧(m+1/8)/2≦ΔDP≦λ1‧(m+7/8)/2, or λ1‧(m+1/4 ) ≦ ≦ DP ≦ 1 1 1 1 (m + 3 / 4) / 2 range. The substrate supporting device according to any one of claims 1 to 4, wherein the first light is light in an ultraviolet wavelength region; and the second light is light in a wavelength band from a visible light region to an infrared region. A substrate processing apparatus including a detecting device for detecting a mark or a pattern formed on a surface of a light-transmitting sheet substrate, and a substrate supporting device having a substrate having a sheet for using the sheet a surface supported by the substrate in a state of being bent or flat; and a film body formed on the surface of the sheet substrate with a predetermined thickness and forming a support surface in contact with the back surface of the sheet substrate; The first detecting system irradiates the first light to the sheet substrate to detect light from the mark or the pattern; and the second detecting system irradiates the second light having a wavelength different from the first light to the sheet a substrate for detecting light from the mark or the pattern; the film body having a thickness set by the support surface of the substrate supporting device for the first light to be smaller than a reflectance for the second light The multilayer film is composed. The substrate supporting device of claim 10, wherein the substrate of the substrate supporting device is made of a metal material mainly composed of iron or aluminum; the multilayer film as the film body is attached to the substrate The surface of the material is formed of two or more layers, and the film thickness is set so that the reflectance of the first light on the support surface is 20% or less. The plate processing apparatus of claim 11, wherein the multilayer film is formed on a base layer on the surface of the substrate and a two-layer structure formed on the base layer to form a top layer of the support surface; The thickness of the base layer is set to be greater than the thickness of the top layer. The apparatus for processing a panel according to claim 12, wherein the base layer is any one of chromium (Cr), copper (Cu), aluminum (Al), silver (Ag) or gold (Au); Any of chromium oxide (Cr ₂ O ₃ , CrO), titanium oxide (TiO), zircon, cerium oxide, diamond-like carbon (DLC) or diamond-like carbon (DLC). The plate processing apparatus of claim 13, wherein the base layer is made of chromium (Cr); and the top layer is made of chromium oxide (Cr ₂ O ₃ , CrO) having a thickness of 30 nm to 150 nm. The apparatus for processing a panel according to claim 13, wherein the base layer is made of copper (Cu) The top layer is composed of diamond-like carbon (DLC) having a thickness of 0.5 μm or more. The plate processing apparatus according to any one of claims 12 to 15, wherein the base layer of the multilayer film as the film body is detected by the first detection system or the second detection system The pattern is formed with a small step. The board processing apparatus according to claim 16, wherein when the center wavelength of the first light is λ1, m is an arbitrary integer including zero, and the small step amount of the reference pattern is ΔDP. When set, it is set to: λ1‧(m+1/8)/2≦ΔDP≦λ1‧(m+7/8)/2, or λ1‧(m+1/4)/2≦△DP ≦λ1‧(m+3/4)/2 range. The plate processing apparatus according to any one of claims 10 to 13, wherein the first light is light in an ultraviolet wavelength region; and the second light is light in a wavelength band from a visible light region to an infrared region.