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TW201718814A - Conductive material and connection structure - Google Patents

Conductive material and connection structure Download PDF

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Publication number
TW201718814A
TW201718814A TW105127035A TW105127035A TW201718814A TW 201718814 A TW201718814 A TW 201718814A TW 105127035 A TW105127035 A TW 105127035A TW 105127035 A TW105127035 A TW 105127035A TW 201718814 A TW201718814 A TW 201718814A
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TW
Taiwan
Prior art keywords
solder
electrode
conductive
compound
particles
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Application number
TW105127035A
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Chinese (zh)
Inventor
伊藤将大
定永周治郎
石澤英亮
久保田敬士
Original Assignee
積水化學工業股份有限公司
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Publication of TW201718814A publication Critical patent/TW201718814A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02Soldered or welded connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/14Structural association of two or more printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H10W74/15

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Combinations Of Printed Boards (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

本發明提供一種可抑制硬化物中黑色煙灰之產生且將導電性粒子中之焊料選擇性地配置於電極上而可提高導通可靠性之導電材料。 本發明之導電材料含有於導電部之外表面部分具有焊料之複數個導電性粒子、熱硬化性成分、及助焊劑,且含有具有異三聚氰酸骨架之化合物作為上述熱硬化性成分或上述助焊劑,上述導電性粒子中之上述焊料之熔點下之導電材料之黏度為0.1 Pa・s以上、20 Pa・s以下。The present invention provides a conductive material which can suppress the generation of black soot in a cured product and selectively arrange the solder in the conductive particles on the electrode to improve the conduction reliability. The conductive material of the present invention contains a plurality of conductive particles having a solder on the outer surface portion of the conductive portion, a thermosetting component, and a flux, and contains a compound having a hetero-cyanuric acid skeleton as the thermosetting component or the above. In the flux, the conductive material under the melting point of the solder in the conductive particles has a viscosity of 0.1 Pa·s or more and 20 Pa·s or less.

Description

導電材料及連接構造體Conductive material and connection structure

本發明係關於一種含有具有焊料之導電性粒子之導電材料。又,本發明係關於一種使用上述導電材料之連接構造體。The present invention relates to a conductive material containing conductive particles having solder. Further, the present invention relates to a connection structure using the above conductive material.

各向異性導電糊及各向異性導電膜等各向異性導電材料已廣為人知。於上述各向異性導電材料中,於黏合劑中分散有導電性粒子。 為了獲得各種連接構造體,而將上述各向異性導電材料用於例如軟性印刷基板與玻璃基板之連接(FOG(Film on Glass,鍍膜玻璃))、半導體晶片與軟性印刷基板之連接(COF(Chip on Film,薄膜覆晶))、半導體晶片與玻璃基板之連接(COG(Chip on Glass,玻璃覆晶))、及軟性印刷基板與環氧玻璃基板之連接(FOB(Film on Board,鍍膜板))等。 於利用上述各向異性導電材料將例如軟性印刷基板之電極與環氧玻璃基板之電極進行電性連接時,係將含有導電性粒子之各向異性導電材料配置於環氧玻璃基板上。繼而,積層軟性印刷基板並進行加熱及加壓。藉此,使各向異性導電材料硬化,經由導電性粒子將電極間電性連接,而獲得連接構造體。 作為上述各向異性導電材料之一例,於下述之專利文獻1中記載有含有導電性粒子與在該導電性粒子之熔點下未結束硬化之樹脂成分之各向異性導電材料。作為上述導電性粒子,具體而言,可列舉錫(Sn)、銦(In)、鉍(Bi)、銀(Ag)、銅(Cu)、鋅(Zn)、鉛(Pb)、鎘(Cd)、鎵(Ga)及鉈(Tl)等金屬、或該等金屬之合金。 於專利文獻1中,記載有經由下述步驟而將電極間進行電性連接:將各向異性導電樹脂加熱至高於上述導電性粒子之熔點、且上述樹脂成分未結束硬化之溫度之樹脂加熱步驟;使上述樹脂成分硬化之樹脂成分硬化步驟。又,於專利文獻1中記載有於專利文獻1之圖8所示之溫度分佈下進行安裝。於專利文獻1中,導電性粒子於在加熱各向異性導電樹脂之溫度下未結束硬化之樹脂成分內熔融。 於下述之專利文獻2中揭示有一種接著帶,其包含含有熱硬化性樹脂之樹脂層、焊料粉、及硬化劑,且上述焊料粉與上述硬化劑存在於上述樹脂層中。該接著帶為膜狀而非糊狀。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2004-260131號公報 [專利文獻2]WO2008/023452A1Anisotropic conductive materials such as anisotropic conductive pastes and anisotropic conductive films are widely known. In the anisotropic conductive material described above, conductive particles are dispersed in the binder. In order to obtain various connection structures, the anisotropic conductive material is used for, for example, a connection between a flexible printed substrate and a glass substrate (FOG (Film on Glass)), and a connection between a semiconductor wafer and a flexible printed substrate (COF (Chip) On film, film flip chip), connection between semiconductor wafer and glass substrate (COG (Chip on Glass)), and connection between flexible printed substrate and epoxy glass substrate (FOB (Film on Board) )Wait. When the electrode of the flexible printed circuit board and the electrode of the epoxy glass substrate are electrically connected by the anisotropic conductive material, the anisotropic conductive material containing the conductive particles is placed on the epoxy glass substrate. Then, a flexible printed circuit board is laminated and heated and pressurized. Thereby, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a bonded structure. As an example of the above-mentioned anisotropic conductive material, Patent Document 1 listed below discloses an anisotropic conductive material containing conductive particles and a resin component which is not cured at the melting point of the conductive particles. Specific examples of the conductive particles include tin (Sn), indium (In), bismuth (Bi), silver (Ag), copper (Cu), zinc (Zn), lead (Pb), and cadmium (Cd). ), metals such as gallium (Ga) and tantalum (Tl), or alloys of such metals. Patent Document 1 describes a resin heating step in which an electrode is electrically connected to each other by heating an anisotropic conductive resin to a temperature higher than a melting point of the conductive particles and the resin component is not cured. a resin component hardening step of hardening the above resin component. Further, Patent Document 1 describes that the mounting is performed under the temperature distribution shown in FIG. 8 of Patent Document 1. In Patent Document 1, the conductive particles are melted in a resin component that has not been cured at a temperature at which the anisotropic conductive resin is heated. Patent Document 2 listed below discloses an adhesive tape comprising a resin layer containing a thermosetting resin, a solder powder, and a curing agent, and the solder powder and the curing agent are present in the resin layer. This adhesive tape is in the form of a film rather than a paste. [Prior Art Document] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-260131 [Patent Document 2] WO2008/023452A1

[發明所欲解決之問題] 本發明者等人發現,於先前之含有焊料粉、或表面具有焊料層之導電性粒子之各向異性導電材料中,存在於各向異性導電材料之硬化物中含有源自焊料之黑色煙灰之情況。尤其於焊料因助焊劑而受到助焊作用時,容易產生黑色煙灰。該黑色煙灰會提高電極間之連接電阻,降低導通可靠性。 又,若使用專利文獻1所記載之各向異性導電材料,藉由專利文獻1所記載之方法將電極間進行電性連接,則存在未將含有焊料之導電性粒子有效率地配置於電極(線)上之情況。又,於專利文獻1之實施例中,為了使焊料於焊料之熔點以上之溫度下充分移動,而保持為一定溫度,連接構造體之製造效率變低。若於專利文獻1之圖8所示之溫度分佈下進行安裝,則連接構造體之製造效率變低。 又,專利文獻2所記載之接著帶為膜狀而非糊狀。於具有如專利文獻2所記載之組成之接著帶中,難以將焊料粉有效率地配置於電極(線)上。例如,於專利文獻2所記載之接著帶中,容易將焊料粉之一部分亦配置於未形成有電極之區域(間隔)。配置於未形成有電極之區域之焊料粉無助於電極間之導通。 本發明之目的在於提供一種可抑制硬化物中黑色煙灰之產生、進而將導電性粒子中之焊料選擇性地配置於電極上而可提高導通可靠性之導電材料。又,本發明之目的在於提供一種使用上述導電材料之連接構造體。 [解決問題之技術手段] 根據本發明之廣義態樣,提供一種導電材料,其含有於導電部之外表面部分具有焊料之複數個導電性粒子、熱硬化性成分、及助焊劑,且含有具有異三聚氰酸骨架之化合物作為上述熱硬化性成分或上述助焊劑,上述導電性粒子中之上述焊料之熔點下之導電材料之黏度為0.1 Pa・s以上、20 Pa・s以下。 較佳為上述具有異三聚氰酸骨架之化合物之含量相對於上述助焊劑之含量之重量比為0.5以上、20以下。較佳為上述具有異三聚氰酸骨架之化合物之含量相對於上述導電性粒子之含量之重量比為0.05以上、0.5以下。 於本發明之導電材料之某特定態樣中,上述具有異三聚氰酸骨架之化合物之分子量為200以上、1000以下。 於本發明之導電材料之某特定態樣中,上述導電材料含有具有異三聚氰酸骨架之熱硬化性化合物或具有異三聚氰酸骨架之熱硬化劑作為上述熱硬化性成分。 於本發明之導電材料之某特定態樣中,上述導電材料含有具有異三聚氰酸骨架之熱硬化性化合物作為上述熱硬化性成分。 於本發明之導電材料之某特定態樣中,上述導電材料含有不具有異三聚氰酸骨架之熱硬化性化合物作為上述熱硬化性成分。 於本發明之導電材料之某特定態樣中,含有具有異三聚氰酸骨架之熱硬化性化合物與上述不具有異三聚氰酸骨架之熱硬化性化合物作為上述熱硬化性成分。 於本發明之導電材料之某特定態樣中,上述不具有異三聚氰酸骨架之熱硬化性化合物係不具有異三聚氰酸骨架、且具有芳香族骨架或脂環式骨架之熱硬化性化合物。 於本發明之導電材料之某特定態樣中,上述導電材料含有磷酸化合物。 於本發明之導電材料之某特定態樣中,上述導電性粒子為焊料粒子。 於本發明之導電材料之某特定態樣中,上述導電材料於25℃下為液狀且為導電糊。 根據本發明之廣義態樣,提供一種連接構造體,其具備表面具有至少1個第1電極之第1連接對象構件、表面具有至少1個第2電極之第2連接對象構件及將上述第1連接對象構件與上述第2連接對象構件連接之連接部,且上述連接部為上述之導電材料之硬化物,上述第1電極與上述第2電極利用上述連接部中之焊料部進行電性連接。 於本發明之連接構造體之某特定態樣中,於沿上述第1電極、上述連接部及上述第2電極之積層方向觀察上述第1電極與上述第2電極之互相對向之部分時,於上述第1電極與上述第2電極之互相對向之部分之面積100%中之50%以上配置有上述連接部中之焊料部。 [發明之效果] 由於本發明之導電材料含有於導電部之外表面部分具有焊料之複數個導電性粒子、熱硬化性成分、及助焊劑,且含有具有異三聚氰酸骨架之化合物作為上述熱硬化性成分或上述助焊劑,上述導電性粒子中之上述焊料之熔點下之導電材料之黏度為0.1 Pa・s以上、20 Pa・s以下,因此可抑制導電材料之硬化物中黑色煙灰之產生。進而,可將導電性粒子中之焊料選擇性地配置於電極上而可提高導通可靠性。[Problems to be Solved by the Invention] The present inventors have found that an anisotropic conductive material containing a solder powder or an electroconductive particle having a solder layer on its surface is present in a cured product of an anisotropic conductive material. Contains black ash from solder. Especially when the solder is subjected to the fluxing action by the flux, black soot is easily generated. The black soot increases the connection resistance between the electrodes and reduces the conduction reliability. In addition, when the electrodes are electrically connected by the method described in Patent Document 1, the anisotropic conductive material described in Patent Document 1 is used, and the conductive particles containing the solder are not efficiently disposed on the electrode ( On the line). Further, in the embodiment of Patent Document 1, in order to sufficiently move the solder at a temperature equal to or higher than the melting point of the solder, the manufacturing efficiency of the connection structure is lowered. When the mounting is performed under the temperature distribution shown in FIG. 8 of Patent Document 1, the manufacturing efficiency of the connection structure is lowered. Further, the adhesive tape described in Patent Document 2 is in the form of a film rather than a paste. In the adhesive tape having the composition described in Patent Document 2, it is difficult to efficiently arrange the solder powder on the electrode (wire). For example, in the adhesive tape described in Patent Document 2, it is easy to arrange a part of the solder powder in a region (interval) where the electrode is not formed. The solder powder disposed in the region where the electrode is not formed does not contribute to conduction between the electrodes. An object of the present invention is to provide a conductive material which can suppress the generation of black soot in a cured product and further selectively deposit the solder in the conductive particles on the electrode to improve the conduction reliability. Further, it is an object of the invention to provide a connection structure using the above-mentioned conductive material. [Technical means for solving the problem] According to a broad aspect of the present invention, there is provided a conductive material comprising a plurality of conductive particles having a solder on a surface portion of a conductive portion, a thermosetting component, and a flux, and having The compound of the isocyanuric acid skeleton is the thermosetting component or the flux, and the conductive material at the melting point of the solder in the conductive particles has a viscosity of 0.1 Pa·s or more and 20 Pa·s or less. It is preferable that the weight ratio of the content of the compound having an iso-cyanuric acid skeleton to the content of the flux is 0.5 or more and 20 or less. The weight ratio of the content of the compound having an iso-cyanuric acid skeleton to the content of the conductive particles is preferably 0.05 or more and 0.5 or less. In a specific aspect of the electrically conductive material of the present invention, the molecular weight of the compound having an isomeric cyanuric acid skeleton is 200 or more and 1,000 or less. In a specific aspect of the electrically conductive material of the present invention, the electrically conductive material contains a thermosetting compound having a hetero-cyanuric acid skeleton or a thermosetting agent having a hetero-cyanuric acid skeleton as the thermosetting component. In a specific aspect of the conductive material of the present invention, the conductive material contains a thermosetting compound having a hetero-cyanuric acid skeleton as the thermosetting component. In a specific aspect of the electrically conductive material of the present invention, the electrically conductive material contains a thermosetting compound having no isomeric cyanuric acid skeleton as the thermosetting component. In a specific aspect of the conductive material of the present invention, a thermosetting compound having a hetero-cyanuric acid skeleton and the above-mentioned thermosetting compound having no iso-cyanuric acid skeleton are contained as the thermosetting component. In a specific aspect of the conductive material of the present invention, the thermosetting compound having no hetero-cyanuric acid skeleton is a thermosetting compound having no hetero-cyanuric acid skeleton and having an aromatic skeleton or an alicyclic skeleton. Sex compounds. In a particular aspect of the electrically conductive material of the present invention, the electrically conductive material comprises a phosphate compound. In a specific aspect of the conductive material of the present invention, the conductive particles are solder particles. In a particular aspect of the electrically conductive material of the present invention, the electrically conductive material is liquid at 25 ° C and is a conductive paste. According to a broad aspect of the present invention, there is provided a connection structure comprising: a first connection target member having at least one first electrode on its surface; a second connection target member having at least one second electrode on its surface; and the first The connection portion is connected to the second connection target member, and the connection portion is a cured material of the conductive material, and the first electrode and the second electrode are electrically connected by a solder portion of the connection portion. In a specific aspect of the connection structure of the present invention, when the first electrode and the second electrode are opposed to each other along the laminated direction of the first electrode, the connection portion, and the second electrode, The solder portion in the connection portion is disposed at 50% or more of the area of the portion where the first electrode and the second electrode face each other. [Effects of the Invention] The conductive material of the present invention contains a plurality of conductive particles, a thermosetting component, and a flux having a solder on the outer surface portion of the conductive portion, and contains a compound having a hetero-cyanuric acid skeleton as the above. In the thermosetting component or the flux, the viscosity of the conductive material at the melting point of the solder in the conductive particles is 0.1 Pa·s or more and 20 Pa·s or less, so that the black soot in the cured material of the conductive material can be suppressed. produce. Further, the solder in the conductive particles can be selectively disposed on the electrode to improve the conduction reliability.

以下,對本發明之詳細內容進行說明。 (導電材料) 本發明之導電材料含有複數個導電性粒子與黏合劑。上述導電性粒子具有導電部。上述導電性粒子於導電部之外表面部分具有焊料。焊料含有於導電部中,為導電部之一部分或全部。上述黏合劑為上述導電材料中所含之除導電性粒子以外之成分。 本發明之導電材料含有熱硬化性成分與助焊劑作為上述黏合劑。上述熱硬化性成分含有熱硬化性化合物。上述熱硬化性成分較佳為含有熱硬化劑。 本發明之導電材料含有具有異三聚氰酸骨架之化合物作為上述熱硬化性成分或上述助焊劑。上述具有異三聚氰酸骨架之化合物可為具有異三聚氰酸骨架之熱硬化性成分,亦可為具有異三聚氰酸骨架之助焊劑,亦可為具有異三聚氰酸骨架之熱硬化性化合物或具有異三聚氰酸骨架之熱硬化劑。上述具有異三聚氰酸骨架之熱硬化性成分可為具有異三聚氰酸骨架之熱硬化性化合物,亦可為具有異三聚氰酸骨架之熱硬化劑。 於本發明之導電材料中,上述導電性粒子中之上述焊料之熔點下之導電材料之黏度為0.1 Pa・s以上、20 Pa・s以下。 於本發明中,由於具備上述之構成,因此可抑制導電材料之硬化物中源自焊料之黑色煙灰之產生。若於導電材料之硬化物中含有黑色煙灰,則電極間之連接電阻變高,導通可靠性降低。於本發明中,由於可抑制黑色煙灰之產生,因此可降低電極間之連接電阻,而可提高導通可靠性。 進而,於本發明中,由於具備上述之構成,故而尤其是上述導電材料於上述導電性粒子中之上述焊料之熔點下之黏度為上述之範圍內,因此可將導電性粒子中之焊料選擇性地配置於電極上。於將電極間進行電性連接之情形時,導電性粒子中之焊料容易聚集於上下相對向之電極間,而可將導電性粒子中之焊料有效率地配置於電極(線)上。 又,難以使導電性粒子中之焊料之一部分配置於未形成有電極之區域(間隔),而可使配置於未形成有電極之區域之焊料之量非常少。於本發明中,可使未位於相對向之電極間之焊料有效率地移動至相對向之電極間。因此,可提高電極間之導通可靠性。並且可防止不得連接之橫向鄰接之電極間之電性連接,而可提高絕緣可靠性。 為了更有效率地將焊料配置於電極上,上述導電材料較佳為於25℃下為液狀,且較佳為導電糊。 為了將焊料有效率地配置於電極上,上述導電性粒子中之上述焊料之熔點下之上述導電材料之黏度(ηmp)為0.1 Pa・s以上、20 Pa・s以下。就將焊料更有效率地配置於電極上之觀點而言,上述黏度(ηmp)較佳為1 Pa・s以上,且較佳為15 Pa・s以下,更佳為10 Pa・s以下。若上述黏度(ηmp)為上述下限以上及上述上限以下,則於導電連接時,導電性粒子或焊料自初期至中期會有效率地移動。 上述黏度可使用STRESSTECH(EOLOGICA公司製造)等,於應變控制1 rad、頻率1 Hz、升溫速度20℃/分鐘、及測定溫度範圍40~200℃(其中於焊料之熔點超過200℃之情形時,將溫度上限設為焊料之熔點)之條件下進行測定。上述焊料之熔點亦可為200℃以下。 上述導電材料可以導電糊及導電膜等形式使用。上述導電材料較佳為各向異性導電材料。上述導電糊較佳為各向異性導電糊。上述導電膜較佳為各向異性導電膜。上述導電材料可較佳地用於電極之電性連接。上述導電材料較佳為電路連接材料。 就進一步抑制黑色煙灰之產生之觀點而言,上述具有異三聚氰酸骨架之化合物之分子量較佳為200以上,更佳為300以上,且較佳為1000以下,更佳為600以下。 就進一步抑制黑色煙灰之產生之觀點而言,上述導電材料100重量%中,上述具有異三聚氰酸骨架之化合物之含量較佳為5重量%以上,更佳為10重量%以上,且較佳為30重量%以下,更佳為20重量%以下。 以下,對上述導電材料所含之各成分進行說明。 (導電性粒子) 上述導電性粒子將連接對象構件之電極間進行電性連接。上述導電性粒子於導電部之外表面部分具有焊料。上述導電性粒子可為焊料粒子。上述焊料粒子係由焊料所形成。上述焊料粒子於導電部之外表面部分具有焊料。上述焊料粒子係上述焊料粒子之中心部分及導電部之外表面部分均為焊料之粒子。關於上述焊料粒子,其中心部分及導電部之外表面部分均由焊料所形成。上述導電性粒子可具有基材粒子、及配置於該基材粒子之表面上之導電部。於該情形時,上述導電性粒子於導電部之外表面部分具有焊料。 再者,與使用上述焊料粒子之情形相比,於使用具備未由焊料形成之基材粒子與配置於基材粒子之表面上之焊料部之導電性粒子之情形時,導電性粒子變得難以聚集於電極上,導電性粒子彼此之焊料接合性較低,因此有移動至電極上之導電性粒子變得容易移動至電極外之傾向,且有抑制電極間之錯位之效果亦降低之傾向。因此,上述導電性粒子較佳為焊料粒子。 就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,較佳為於上述導電性粒子之外表面(焊料之外表面)存在羧基或胺基,較佳為存在羧基,較佳為存在胺基。較佳為經由Si-O鍵、醚鍵、酯鍵或下述式(X)所表示之基而於上述導電性粒子之外表面(焊料之外表面)共價鍵結有含有羧基或胺基之基,更佳為經由醚鍵、酯鍵或下述式(X)所表示之基而於上述導電性粒子之外表面(焊料之外表面)共價鍵結有含有羧基或胺基之基。含有羧基或胺基之基可含有羧基與胺基之兩者。再者,於下述式(X)中,右端部及左端部表示鍵結部位。 [化1]於焊料之表面存在羥基。藉由使該羥基與含有羧基之基進行共價鍵結,可形成較藉由其他配位鍵(螯合配位)等進行鍵結之情形更強之鍵,因此可獲得可降低電極間之連接電阻且可抑制孔隙之產生之導電性粒子。 於上述導電性粒子中,焊料之表面與含有羧基之基之鍵結形態可不含配位鍵,亦可不含由螯合配位形成之鍵。 就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,上述導電性粒子較佳為藉由使用具有能夠與羥基反應之官能基及羧基或胺基之化合物(以下有時記作化合物X),使焊料表面之羥基與上述能夠與羥基反應之官能基進行反應而獲得。於上述反應中形成共價鍵。藉由使焊料表面之羥基與上述化合物中之上述能夠與羥基反應之官能基進行反應,可容易地獲得於焊料之表面共價鍵結有含有羧基或胺基之基之導電性粒子,亦可獲得經由醚鍵或酯鍵而於焊料之表面共價鍵結有含有羧基或胺基之基之導電性粒子。藉由使上述焊料表面之羥基與上述能夠與羥基反應之官能基進行反應,可使上述化合物X以共價鍵之形態化學鍵結於焊料之表面。 作為上述能夠與羥基反應之官能基,可列舉羥基、羧基、酯基及羰基等。較佳為羥基或羧基。上述能夠與羥基反應之官能基可為羥基,亦可為羧基。 作為具有能夠與羥基反應之官能基之化合物,可列舉:乙醯丙酸、戊二酸、乙醇酸、琥珀酸、蘋果酸、草酸、丙二酸、己二酸、5-酮己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸、4-苯基丁酸、癸酸、十二烷酸、十四烷酸、十五烷酸、十六烷酸、9-十六碳烯酸、十七烷酸、硬脂酸、油酸、異油酸、亞麻油酸、(9,12,15)-次亞麻油酸、十九烷酸、花生酸、癸二酸及十二烷二酸等。較佳為戊二酸或乙醇酸。上述具有能夠與羥基反應之官能基之化合物可僅使用一種,亦可併用兩種以上。上述具有能夠與羥基反應之官能基之化合物較佳為至少具有1個羧基之化合物。 上述化合物X較佳為具有助焊作用,上述化合物X較佳為於鍵結於焊料之表面之狀態下具有助焊作用。具有助焊作用之化合物能夠去除焊料表面之氧化膜及電極表面之氧化膜。羧基具有助焊作用。 作為具有助焊作用之化合物,可列舉:乙醯丙酸、戊二酸、乙醇酸、琥珀酸、5-酮己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸及4-苯基丁酸等。較佳為戊二酸或乙醇酸。上述具有助焊作用之化合物可僅使用一種,亦可併用兩種以上。 就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,較佳為上述化合物X中之上述能夠與羥基反應之官能基為羥基或羧基。上述化合物X中之上述能夠與羥基反應之官能基可為羥基,亦可為羧基。於上述能夠與羥基反應之官能基為羧基之情形時,上述化合物X較佳為至少具有2個羧基。藉由使至少具有2個羧基之化合物之一部分羧基與焊料表面之羥基進行反應,可獲得於焊料之表面共價鍵結有含有羧基之基之導電性粒子。 上述導電性粒子之製造方法例如具備如下步驟:使用導電性粒子,將該導電性粒子、具有能夠與羥基反應之官能基及羧基之化合物、觸媒及溶劑加以混合。於上述導電性粒子之製造方法中,藉由上述混合步驟,可容易地獲得於焊料之表面共價鍵結有含有羧基之基之導電性粒子。 又,於上述導電性粒子之製造方法中,較佳為使用導電性粒子,將該導電性粒子、上述具有能夠與羥基反應之官能基及羧基之化合物、上述觸媒及上述溶劑加以混合,並進行加熱。藉由混合及加熱步驟,可更容易地獲得於焊料之表面共價鍵結有含有羧基之基之導電性粒子。 作為上述溶劑,可列舉:甲醇、乙醇、丙醇及丁醇等醇溶劑;或丙酮、甲基乙基酮、乙酸乙酯、甲苯及二甲苯等。上述溶劑較佳為有機溶劑,更佳為甲苯。上述溶劑可僅使用一種,亦可併用兩種以上。 作為上述觸媒,可列舉對甲苯磺酸、苯磺酸及10-樟腦磺酸等。上述觸媒較佳為對甲苯磺酸。上述觸媒可僅使用一種,亦可併用兩種以上。 較佳為於上述混合時進行加熱。加熱溫度較佳為90℃以上,更佳為100℃以上,且較佳為130℃以下,更佳為110℃以下。 就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,上述導電性粒子較佳為經由如下步驟而獲得:使用異氰酸酯化合物,使焊料表面之羥基與上述異氰酸酯化合物進行反應。於上述反應中形成共價鍵。藉由使焊料表面之羥基與上述異氰酸酯化合物進行反應,可容易地獲得於焊料之表面共價鍵結有源自異氰酸酯基之基之氮原子之導電性粒子。藉由使上述焊料表面之羥基與上述異氰酸酯化合物進行反應,可使源自異氰酸酯基之基以共價鍵之形態化學鍵結於焊料之表面。 又,可使源自異氰酸酯基之基與矽烷偶合劑容易地進行反應。由於可容易地獲得上述導電性粒子,因此上述含有羧基之基較佳為藉由使用具有羧基之矽烷偶合劑之反應而導入,或藉由在使用矽烷偶合劑之反應後,使源自矽烷偶合劑之基與至少具有1個羧基之化合物進行反應而導入。上述導電性粒子較佳為藉由使用上述異氰酸酯化合物,使焊料表面之羥基與上述異氰酸酯化合物進行反應後與至少具有1個羧基之化合物進行反應而獲得。 就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,較佳為上述至少具有1個羧基之化合物具有複數個羧基。 作為上述異氰酸酯化合物,可列舉二苯基甲烷-4,4'-二異氰酸酯(MDI)、六亞甲基二異氰酸酯(HDI)、甲苯二異氰酸酯(TDI)及異佛酮二異氰酸酯(IPDI)等。亦可使用該等以外之異氰酸酯化合物。使該化合物與焊料之表面進行反應後,使殘留異氰酸酯基與和該殘留異氰酸酯基具有反應性且具有羧基之化合物進行反應,藉此可經由上述式(X)所表示之基而將羧基導入至焊料之表面。 作為上述異氰酸酯化合物,亦可使用具有不飽和雙鍵且具有異氰酸酯基之化合物。例如,可列舉異氰酸2-丙烯醯氧基乙酯及甲基丙烯酸2-異氰酸酯基乙酯。藉由使該化合物之異氰酸酯基與焊料之表面進行反應後,與具有對殘存之不飽和雙鍵具有反應性之官能基且具有羧基之化合物進行反應,可經由上述式(X)所表示之基而將羧基導入至焊料之表面。 作為上述矽烷偶合劑,可列舉3-異氰酸基丙基三乙氧基矽烷(Shin-Etsu Silicones公司製造之「KBE-9007」)、及3-異氰酸基丙基三甲氧基矽烷(MOMENTIVE公司製造之「Y-5187」)等。上述矽烷偶合劑可僅使用一種,亦可併用兩種以上。 作為上述至少具有1個羧基之化合物,可列舉:乙醯丙酸、戊二酸、乙醇酸、琥珀酸、蘋果酸、草酸、丙二酸、己二酸、5-酮己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸、4-苯基丁酸、癸酸、十二烷酸、十四烷酸、十五烷酸、十六烷酸、9-十六碳烯酸、十七烷酸、硬脂酸、油酸、異油酸、亞麻油酸、(9,12,15)-次亞麻油酸、十九烷酸、花生酸、癸二酸及十二烷二酸等。較佳為戊二酸、己二酸或乙醇酸。上述至少具有1個羧基之化合物可僅使用一種,亦可併用兩種以上。 使用上述異氰酸酯化合物,使焊料表面之羥基與上述異氰酸酯化合物進行反應後,使具有複數個羧基之化合物之一部分羧基與焊料表面之羥基進行反應,藉此可使含有羧基之基殘存。 於上述導電性粒子之製造方法中,使用導電性粒子,並且使用異氰酸酯化合物,使焊料表面之羥基與上述異氰酸酯化合物進行反應後,與至少具有1個羧基之化合物進行反應,獲得經由上述式(X)所表示之基而於焊料之表面鍵結有含有羧基之基之導電性粒子。於上述導電性粒子之製造方法中,藉由上述之步驟,可容易地獲得於焊料之表面導入有含有羧基之基之導電性粒子。 作為上述導電性粒子之具體之製造方法,可列舉以下之方法。使導電性粒子分散於有機溶劑中,並添加具有異氰酸酯基之矽烷偶合劑。其後,使用導電性粒子之焊料表面之羥基與異氰酸酯基之反應觸媒,使矽烷偶合劑共價鍵結於焊料之表面。繼而,藉由將鍵結於矽烷偶合劑之矽原子上之烷氧基進行水解,而生成羥基。使所生成之羥基與至少具有1個羧基之化合物之羧基進行反應。 又,作為上述導電性粒子之具體之製造方法,可列舉以下之方法。使導電性粒子分散於有機溶劑中,並添加具有異氰酸酯基與不飽和雙鍵之化合物。其後,使用導電性粒子之焊料表面之羥基與異氰酸酯基之反應觸媒,而形成共價鍵。其後,對於所導入之不飽和雙鍵,使不飽和雙鍵及具有羧基之化合物與之反應。 作為導電性粒子之焊料表面之羥基與異氰酸酯基之反應觸媒,可列舉:錫系觸媒(二月桂酸二丁基錫等)、胺系觸媒(三乙二胺等)、羧酸酯觸媒(環烷酸鉛、乙酸鉀等)、及三烷基膦觸媒(三乙基膦等)等。 就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,上述至少具有1個羧基之化合物較佳為下述式(1)所表示之化合物。下述式(1)所表示之化合物具有助焊作用。又,下述式(1)所表示之化合物於導入至焊料之表面之狀態下具有助焊作用。 [化2]上述式(1)中,X表示能夠與羥基反應之官能基,R表示碳數1~5之二價有機基。該有機基可含有碳原子、氫原子及氧原子。該有機基可為碳數1~5之二價烴基。上述有機基之主鏈較佳為二價烴基。於該有機基中,可於二價烴基上鍵結有羧基或羥基。於上述式(1)所表示之化合物中例如含有檸檬酸。 上述至少具有1個羧基之化合物較佳為下述式(1A)或下述式(1B)所表示之化合物。上述至少具有1個羧基之化合物較佳為下述式(1A)所表示之化合物,更佳為下述式(1B)所表示之化合物。 [化3]上述式(1A)中,R表示碳數1~5之二價有機基。上述式(1A)中之R與上述式(1)中之R相同。 [化4]上述式(1B)中,R表示碳數1~5之二價有機基。上述式(1B)中之R與上述式(1)中之R相同。 較佳為於焊料之表面鍵結有下述式(2A)或下述式(2B)所表示之基。較佳為於焊料之表面鍵結有下述式(2A)所表示之基,更佳為鍵結有下述式(2B)所表示之基。再者,於下述式(2A)及下述式(2B)中,左端部表示鍵結部位。 [化5]上述式(2A)中,R表示碳數1~5之二價有機基。上述式(2A)中之R與上述式(1)中之R相同。 [化6]上述式(2B)中,R表示碳數1~5之二價有機基。上述式(2B)中之R與上述式(1)中之R相同。 就提高焊料表面之潤濕性之觀點而言,上述至少具有1個羧基之化合物之分子量較佳為10000以下,更佳為1000以下,進而較佳為500以下。 於上述至少具有1個羧基之化合物不為聚合物之情形、及可特定出上述至少具有1個羧基之化合物之結構式之情形時,上述分子量意指可根據該結構式算出之分子量。又,於上述至少具有1個羧基之化合物為聚合物之情形時,意指重量平均分子量。 就於導電連接時可有效地提高導電性粒子之凝集性之方面而言,上述導電性粒子較佳為具有導電性粒子本體、及配置於上述導電性粒子本體之表面上之陰離子聚合物。上述導電性粒子較佳為藉由利用陰離子聚合物或成為陰離子聚合物之化合物對導電性粒子本體進行表面處理而獲得。上述導電性粒子較佳為藉由陰離子聚合物或成為陰離子聚合物之化合物處理之表面處理物。上述陰離子聚合物及上述成為陰離子聚合物之化合物分別可僅使用一種,亦可併用兩種以上。上述陰離子聚合物為具有酸性基之聚合物。 作為藉由陰離子聚合物對導電性粒子本體進行表面處理之方法,可列舉如下方法:作為陰離子聚合物而使用例如使(甲基)丙烯酸進行共聚合而成之(甲基)丙烯酸系聚合物、由二羧酸與二醇合成且兩末端具有羧基之聚酯聚合物、藉由二羧酸之分子間脫水縮合反應而獲得且兩末端具有羧基之聚合物、由二羧酸與二胺合成且兩末端具有羧基之聚酯聚合物、及具有羧基之改性聚乙烯醇(日本合成化學公司製造之「Gohsenx T」)等,使陰離子聚合物之羧基與導電性粒子本體表面之羥基進行反應。 作為上述陰離子聚合物之陰離子部分,可列舉上述羧基,除此以外,可列舉甲苯磺醯基(p-H3 CC6 H4 S(=O)2 -)、磺酸根離子基(-SO3 - )、及磷酸根離子基(-PO4 - )等。 又,作為表面處理之其他方法,可列舉如下方法:使用具有與導電性粒子本體表面之羥基進行反應之官能基,進而具有可藉由加成、縮合反應而聚合之官能基之化合物,使該化合物於導電性粒子本體之表面上進行聚合物化。作為與導電性粒子本體表面之羥基進行反應之官能基,可列舉羧基、及異氰酸酯基等,作為藉由加成、縮合反應進行聚合之官能基,可列舉羥基、羧基、胺基、及(甲基)丙烯醯基。 上述陰離子聚合物之重量平均分子量較佳為2000以上,更佳為3000以上,且較佳為10000以下,更佳為8000以下。若上述重量平均分子量為上述下限以上及上述上限以下,則可對導電性粒子之表面導入充分量之電荷、及助焊性。藉此,於導電連接時可有效地提高導電性粒子之凝集性,且於連接對象構件之連接時可有效地去除電極表面之氧化膜。 若上述重量平均分子量為上述下限以上及上述上限以下,則容易於導電性粒子本體之表面上配置陰離子聚合物,於導電連接時可有效地提高焊料粒子之凝集性,而可將導電性粒子更有效率地配置於電極上。 上述重量平均分子量表示藉由凝膠滲透層析法(GPC)所測得之以聚苯乙烯換算之重量平均分子量。 陰離子聚合物之重量平均分子量可藉由將導電性粒子中之焊料溶解,利用不引起陰離子聚合物之分解之稀鹽酸等去除導電性粒子後,測定殘存之陰離子聚合物之重量平均分子量而求出。 關於陰離子聚合物對導電性粒子之表面之導入量,導電性粒子每1 g之酸值較佳為1 mgKOH以上,更佳為2 mgKOH以上,且較佳為10 mgKOH以下,更佳為6 mgKOH以下。 上述酸值可藉由下述方式進行測定。將導電性粒子1 g添加至丙酮36 g中,藉由超音波使其分散1分鐘。其後,使用酚酞作為指示劑,利用0.1 mol/L之氫氧化鉀乙醇溶液進行滴定。 繼而,一面參照圖式,一面對導電性粒子之具體例進行說明。 圖4係表示可用於導電材料之導電性粒子之第1例之剖面圖。 圖4所示之導電性粒子21為焊料粒子。導電性粒子21係整體由焊料形成。導電性粒子21於核中不具有基材粒子,並非核殼粒子。導電性粒子21之中心部分及導電部之外表面部分均由焊料所形成。 圖5係表示可用於導電材料之導電性粒子之第2例之剖面圖。 圖5所示之導電性粒子31具備基材粒子32、及配置於基材粒子32之表面上之導電部33。導電部33被覆基材粒子32之表面。導電性粒子31係基材粒子32之表面被導電部33所被覆之被覆粒子。 導電部33具有第2導電部33A、及焊料部33B(第1導電部)。導電性粒子31於基材粒子32與焊料部33B之間具備第2導電部33A。因此,導電性粒子31具備基材粒子32、配置於基材粒子32之表面上之第2導電部33A、及配置於第2導電部33A之外表面上之焊料部33B。 圖6係表示可用於導電材料之導電性粒子之第3例之剖面圖。 如上所述,導電性粒子31中之導電部33具有2層構造。圖6所示之導電性粒子41具有焊料部42作為單層之導電部。導電性粒子41具備基材粒子32、及配置於基材粒子32之表面上之焊料部42。 作為上述基材粒子,可列舉:樹脂粒子、除金屬粒子以外之無機粒子、有機無機混合粒子及金屬粒子等。上述基材粒子較佳為除金屬以外之基材粒子,較佳為樹脂粒子、除金屬粒子以外之無機粒子或有機無機混合粒子。上述基材粒子可為銅粒子。上述基材粒子可具有核及配置於該核之表面上之殼,可為核殼粒子。上述核可為有機核,上述殼可為無機殼。 作為用以形成上述樹脂粒子之樹脂,可較佳地使用各種有機物。作為用以形成上述樹脂粒子之樹脂,例如可列舉:聚乙烯、聚丙烯、聚苯乙烯、聚氯乙烯、聚偏二氯乙烯、聚異丁烯、聚丁二烯等聚烯烴樹脂;聚甲基丙烯酸甲酯及聚丙烯酸甲酯等丙烯酸系樹脂;聚碳酸酯、聚醯胺、酚甲醛樹脂、三聚氰胺甲醛樹脂、苯胍胺甲醛樹脂、脲甲醛樹脂、酚系樹脂、三聚氰胺樹脂、苯胍胺樹脂、脲樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、聚對苯二甲酸乙二酯、聚碸、聚苯醚、聚縮醛、聚醯亞胺、聚醯胺醯亞胺、聚醚醚酮、聚醚碸、二乙烯基苯聚合物、及二乙烯基苯系共聚物等。作為上述二乙烯基苯系共聚物等,可列舉二乙烯基苯-苯乙烯共聚物及二乙烯基苯-(甲基)丙烯酸酯共聚物等。由於可將上述樹脂粒子之硬度容易地控制於較佳之範圍內,因此用以形成上述樹脂粒子之樹脂較佳為使一種或兩種以上之具有乙烯性不飽和基之聚合性單體進行聚合而成之聚合物。 於使具有乙烯性不飽和基之聚合性單體進行聚合而獲得上述樹脂粒子之情形時,作為該具有乙烯性不飽和基之聚合性單體,可列舉非交聯性之單體與交聯性之單體。 作為上述非交聯性之單體,例如可列舉:苯乙烯、α-甲基苯乙烯等苯乙烯系單體;(甲基)丙烯酸、順丁烯二酸、順丁烯二酸酐等含羧基之單體;(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸鯨蠟酯、(甲基)丙烯酸硬脂酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸異酯等(甲基)丙烯酸烷基酯化合物;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸甘油酯、聚氧乙烯(甲基)丙烯酸酯、(甲基)丙烯酸縮水甘油酯等含氧原子之(甲基)丙烯酸酯化合物;(甲基)丙烯腈等含腈單體;甲基乙烯醚、乙基乙烯醚、丙基乙烯醚等乙烯醚化合物;乙酸乙烯酯、丁酸乙烯酯、月桂酸乙烯酯、硬脂酸乙烯酯等酸乙烯酯化合物;乙烯、丙烯、異戊二烯、丁二烯等不飽和烴;(甲基)丙烯酸三氟甲酯、(甲基)丙烯酸五氟乙酯、氯乙烯、氟乙烯、氯苯乙烯等含鹵素單體等。 作為上述交聯性之單體,例如可列舉:四羥甲基甲烷四(甲基)丙烯酸酯、四羥甲基甲烷三(甲基)丙烯酸酯、四羥甲基甲烷二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、三(甲基)丙烯酸甘油酯、二(甲基)丙烯酸甘油酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、(聚)四亞甲基二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等多官能(甲基)丙烯酸酯化合物;(異)氰尿酸三烯丙酯、偏苯三酸三烯丙酯、二乙烯基苯、鄰苯二甲酸二烯丙酯、二烯丙基丙烯醯胺、二烯丙基醚;及γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷、三甲氧基矽烷基苯乙烯、乙烯基三甲氧基矽烷等含矽烷單體等。 藉由利用公知之方法使上述具有乙烯性不飽和基之聚合性單體進行聚合,可獲得上述樹脂粒子。作為該方法,例如可列舉於自由基聚合起始劑之存在下進行懸浮聚合之方法、及使用非交聯之種粒子與自由基聚合起始劑一併使單體膨潤而進行聚合之方法等。 於上述基材粒子為除金屬以外之無機粒子或有機無機混合粒子之情形時,作為用以形成基材粒子之無機物,可列舉:二氧化矽、氧化鋁、鈦酸鋇、氧化鋯及碳黑等。上述無機物較佳為不為金屬。作為上述由二氧化矽形成之粒子,並無特別限定,例如可列舉藉由將具有2個以上水解性之烷氧基矽烷基之矽化合物進行水解而形成交聯聚合物粒子後,視需要進行煅燒而獲得之粒子。作為上述有機無機混合粒子,例如可列舉由經交聯之烷氧基矽烷基聚合物與丙烯酸系樹脂所形成之有機無機混合粒子等。 於上述基材粒子為金屬粒子之情形時,作為用以形成該金屬粒子之金屬,可列舉:銀、銅、鎳、矽、金及鈦等。於上述基材粒子為金屬粒子之情形時,該金屬粒子較佳為銅粒子。但較佳為上述基材粒子不為金屬粒子。 上述基材粒子之粒徑較佳為0.1 μm以上,更佳為1 μm以上,進而較佳為1.5 μm以上,尤佳為2 μm以上,且較佳為100 μm以下,更佳為50 μm以下,進而較佳為40 μm以下,進而較佳為20 μm以下,進而較佳為10 μm以下,尤佳為5 μm以下,最佳為3 μm以下。若上述基材粒子之粒徑為上述下限以上,則導電性粒子與電極之接觸面積變大,因此可進一步提高電極間之導通可靠性,而可進一步降低經由導電性粒子所連接之電極間之連接電阻。若上述基材粒子之粒徑為上述上限以下,則導電性粒子容易被充分壓縮,可進一步降低電極間之連接電阻,進而可進一步減小電極間之間隔。 上述基材粒子之粒徑於基材粒子為真球狀之情形時表示直徑,於基材粒子不為真球狀之情形時表示最大直徑。 上述基材粒子之粒徑尤佳為2 μm以上、5 μm以下。若上述基材粒子之粒徑為2 μm以上、5 μm以下之範圍內,則可進一步減小電極間之間隔,且即便加厚導電部之厚度,亦可獲得較小之導電性粒子。 於上述基材粒子之表面上形成導電部之方法、及於上述基材粒子之表面上或上述第2導電部之表面上形成焊料部之方法並無特別限定。作為形成上述導電部及上述焊料部之方法,例如可列舉利用無電解鍍覆之方法、利用電鍍之方法、利用物理碰撞之方法、利用機械化學反應之方法、利用物理蒸鍍或物理吸附之方法、及將含有金屬粉末或金屬粉末與黏合劑之糊塗佈於基材粒子之表面之方法等。較佳為利用無電解鍍覆、電鍍或物理碰撞之方法。作為上述利用物理蒸鍍之方法,可列舉真空蒸鍍、離子鍍覆及離子濺鍍等方法。又,於上述利用物理碰撞之方法中,例如使用Thetacomposer(德壽工作所公司製造)等。 上述基材粒子之熔點較佳為高於上述導電部及上述焊料部之熔點。上述基材粒子之熔點較佳為超過160℃,更佳為超過300℃,進而較佳為超過400℃,尤佳為超過450℃。再者,上述基材粒子之熔點亦可未達400℃。上述基材粒子之熔點亦可為160℃以下。上述基材粒子之軟化點較佳為260℃以上。上述基材粒子之軟化點亦可未達260℃。 上述導電性粒子可具有單層之焊料部。上述導電性粒子亦可具有複數層之導電部(焊料部、第2導電部)。即,於上述導電性粒子中,可積層2層以上之導電部。於上述導電部為2層以上之情形時,上述導電性粒子較佳為於導電部之外表面部分具有焊料。 上述焊料較佳為熔點為450℃以下之金屬(低熔點金屬)。上述焊料部較佳為熔點為450℃以下之金屬層(低熔點金屬層)。上述低熔點金屬層為含有低熔點金屬之層。上述導電性粒子中之焊料較佳為熔點為450℃以下之金屬粒子(低熔點金屬粒子)。上述低熔點金屬粒子為含有低熔點金屬之粒子。該所謂低熔點金屬表示熔點為450℃以下之金屬。低熔點金屬之熔點較佳為300℃以下,更佳為160℃以下。又,上述導電性粒子中之焊料較佳為含有錫。上述焊料部所含之金屬100重量%中及上述導電性粒子中之焊料所含之金屬100重量%中,錫之含量較佳為30重量%以上,更佳為40重量%以上,進而較佳為70重量%以上,尤佳為90重量%以上。若上述導電性粒子中之焊料所含之錫之含量為上述下限以上,則導電性粒子與電極之導通可靠性進一步提高。 再者,上述錫之含量可使用高頻電感耦合電漿發射光譜分析裝置(堀場製作所公司製造之「ICP-AES」)、或螢光X射線分析裝置(島津製作所公司製造之「EDX-800HS」)等進行測定。 藉由使用上述導電部之外表面部分具有焊料之導電性粒子,焊料熔融而與電極接合,焊料使電極間導通。例如,由於焊料與電極容易進行面接觸而非點接觸,因此連接電阻變低。又,藉由使用導電部之外表面部分具有焊料之導電性粒子,焊料與電極之接合強度變高,結果變得更難以產生焊料與電極之剝離,導通可靠性有效地提高。 構成上述焊料部及上述焊料粒子之低熔點金屬並無特別限定。該低熔點金屬較佳為錫、或含有錫之合金。該合金可列舉:錫-銀合金、錫-銅合金、錫-銀-銅合金、錫-鉍合金、錫-鋅合金、錫-銦合金等。就對電極之潤濕性優異之方面而言,上述低熔點金屬較佳為錫、錫-銀合金、錫-銀-銅合金、錫-鉍合金、錫-銦合金。更佳為錫-鉍合金、錫-銦合金。 基於JIS Z3001:焊接用語,構成上述焊料(焊料部)之材料較佳為液相線為450℃以下之熔填材料。作為上述焊料之組成,例如可列舉含有鋅、金、銀、鉛、銅、錫、鉍、銦等之金屬組成。較佳為低熔點且無鉛之錫-銦系(117℃共晶)、或錫-鉍系(139℃共晶)。即,上述焊料較佳為不含鉛,且較佳為含有錫與銦之焊料、或含有錫與鉍之焊料。 為了進一步提高上述焊料與電極之接合強度,上述導電性粒子中之焊料亦可含有鎳、銅、銻、鋁、鋅、鐵、金、鈦、磷、鍺、碲、鈷、鉍、錳、鉻、鉬、鈀等金屬。又,就進一步提高焊料與電極之接合強度之觀點而言,上述導電性粒子中之焊料較佳為含有鎳、銅、銻、鋁或鋅。就更進一步提高焊料部或導電性粒子中之焊料與電極之接合強度之觀點而言,用以提高接合強度之該等金屬之含量於上述導電性粒子中之焊料100重量%中,較佳為0.0001重量%以上,且較佳為1重量%以下。 上述第2導電部之熔點較佳為高於上述焊料部之熔點。上述第2導電部之熔點較佳為超過160℃,更佳為超過300℃,進而較佳為超過400℃,進而更佳為超過450℃,尤佳為超過500℃,最佳為超過600℃。上述焊料部因熔點較低而於導電連接時熔融。上述第2導電部較佳為於導電連接時不會熔融。上述導電性粒子較佳為使焊料熔融而使用,較佳為使上述焊料部熔融而使用,較佳為使上述焊料部熔融且不使上述第2導電部熔融而使用。藉由上述第2導電部之熔點高於上述焊料部之熔點,於導電連接時可不使上述第2導電部熔融而僅使上述焊料部熔融。 上述焊料部之熔點與上述第2導電部之熔點之差之絕對值超過0℃,較佳為5℃以上,更佳為10℃以上,進而較佳為30℃以上,尤佳為50℃以上,最佳為100℃以上。 上述第2導電部較佳為含有金屬。構成上述第2導電部之金屬並無特別限定。作為該金屬,例如可列舉金、銀、銅、鉑、鈀、鋅、鉛、鋁、鈷、銦、鎳、鉻、鈦、銻、鉍、鍺及鎘、以及該等之合金等。又,作為上述金屬,可使用摻錫氧化銦(ITO)。上述金屬可僅使用一種,亦可併用兩種以上。 上述第2導電部較佳為鎳層、鈀層、銅層或金層,更佳為鎳層或金層,進而較佳為銅層。導電性粒子較佳為具有鎳層、鈀層、銅層或金層,更佳為具有鎳層或金層,進而較佳為具有銅層。藉由將具有該等較佳之導電部之導電性粒子用於電極間之連接,電極間之連接電阻進一步降低。又,可於該等較佳之導電部之表面更容易地形成焊料部。 上述焊料部之厚度較佳為0.005 μm以上,更佳為0.01 μm以上,且較佳為10 μm以下,更佳為1 μm以下,進而較佳為0.3 μm以下。若焊料部之厚度為上述下限以上及上述上限以下,則可獲得充分之導電性,且導電性粒子不會變得過硬,而於電極間之連接時導電性粒子會充分變形。 上述導電性粒子之平均粒徑較佳為0.5 μm以上,更佳為1 μm以上,進而較佳為3 μm以上,且較佳為100 μm以下,更佳為50 μm以下,進而較佳為40 μm以下,尤佳為30 μm以下。若上述導電性粒子之平均粒徑為上述下限以上及上述上限以下,則可將導電性粒子中之焊料進一步有效率地配置於電極上,容易於電極間大量配置導電性粒子中之焊料,而導通可靠性進一步提高。 上述導電性粒子之「平均粒徑」表示數量平均粒徑。導電性粒子之平均粒徑例如可藉由利用電子顯微鏡或光學顯微鏡觀察任意50個導電性粒子,算出平均值而求出。 上述導電性粒子之形狀並無特別限定。上述導電性粒子之形狀可為球狀,亦可為扁平狀等球形狀以外之形狀。 上述導電材料100重量%中,上述導電性粒子之含量較佳為1重量%以上,更佳為2重量%以上,進而較佳為10重量%以上,尤佳為20重量%以上,最佳為30重量%以上,且較佳為80重量%以下,更佳為60重量%以下,進而較佳為50重量%以下。若上述導電性粒子之含量為上述下限以上及上述上限以下,則可將導電性粒子中之焊料進一步有效率地配置於電極上,容易於電極間大量配置導電性粒子中之焊料,導通可靠性進一步提高。就進一步提高導通可靠性之觀點而言,上述導電性粒子之含量較佳為較多。 (熱硬化性化合物) 上述熱硬化性化合物係可藉由加熱而硬化之化合物。作為上述熱硬化性化合物,可列舉氧雜環丁烷化合物、環氧化合物、環硫化合物、(甲基)丙烯酸系化合物、酚化合物、胺基化合物、不飽和聚酯化合物、聚胺基甲酸酯化合物、聚矽氧化合物及聚醯亞胺化合物等。就使導電材料之硬化性及黏度更良好,進一步提高連接可靠性之觀點而言,較佳為環氧化合物或環硫化合物,更佳為環氧化合物。上述導電材料較佳為含有環氧化合物。上述熱硬化性化合物可僅使用一種,亦可併用兩種以上。 作為上述環氧化合物,可列舉芳香族環氧化合物。較佳為間苯二酚型環氧化合物、萘型環氧化合物、聯苯型環氧化合物、及二苯甲酮型環氧化合物等結晶性環氧化合物。較佳為於常溫(23℃)下為固體且熔融溫度為焊料之熔點以下之環氧化合物。熔融溫度較佳為100℃以下,更佳為80℃以下,且較佳為40℃以上。藉由使用上述較佳之環氧化合物,於貼合有連接對象構件之階段,黏度較高,於因搬送等之衝擊而被賦予加速度時,可抑制第1連接對象構件與第2連接對象構件之錯位,並且,藉由硬化時之熱可使導電材料之黏度大幅度降低,而可使焊料之凝集高效率地進行。 就抑制黑色煙灰之產生之觀點而言,上述導電材料較佳為含有具有異三聚氰酸骨架之熱硬化性化合物作為上述熱硬化性成分及上述熱硬化性化合物。就提高導電材料之硬化性、提高連接可靠性之觀點而言,上述具有異三聚氰酸骨架之熱硬化性化合物較佳為具有環氧基或環硫乙烷基,且較佳為具有異三聚氰酸骨架之環氧化合物或具有異三聚氰酸骨架之環硫化合物。尤佳為具有異三聚氰酸骨架之環氧化合物。上述導電材料亦可含有不具有異三聚氰酸骨架之熱硬化性化合物。 作為上述具有異三聚氰酸骨架之熱硬化性化合物,可列舉三三縮水甘油醚等,可列舉日產化學工業公司製造之TEPIC系列(TEPIC-G、TEPIC-S、TEPIC-SS、TEPIC-HP、TEPIC-L、TEPIC-PAS、TEPIC-VL、TEPIC-UC)等。 上述具有異三聚氰酸骨架之環硫化合物例如可藉由將具有異三聚氰酸骨架之環氧化合物之環氧基轉化為環硫乙烷基而獲得。該轉化方法為公知。 就進一步抑制黑色煙灰之產生之觀點而言,上述具有異三聚氰酸骨架之熱硬化性化合物之分子量較佳為200以上,更佳為300以上,且較佳為1000以下,更佳為600以下。 就提高導電材料之硬化性、提高連接可靠性之觀點而言,上述導電材料較佳為含有上述具有異三聚氰酸骨架之熱硬化性化合物並且含有不具有異三聚氰酸骨架之熱硬化性化合物作為上述熱硬化性成分及上述熱硬化性化合物。就提高導電材料之硬化性及硬化物之耐熱性、提高連接可靠性之觀點而言,上述不具有異三聚氰酸骨架之熱硬化性化合物較佳為具有芳香族骨架或脂環式骨架,較佳為不具有異三聚氰酸骨架、且具有芳香族骨架或脂環式骨架之熱硬化性化合物。 上述導電材料100重量%中,上述熱硬化性化合物之整體之含量較佳為20重量%以上,更佳為40重量%以上,進而較佳為50重量%以上,且較佳為99重量%以下,更佳為98重量%以下,進而較佳為90重量%以下,尤佳為80重量%以下。若上述熱硬化性化合物之含量為上述下限以上及上述上限以下,則可將導電性粒子中之焊料進一步有效率地配置於電極上,進一步抑制電極間之錯位,而進一步提高電極間之導通可靠性。就進一步提高耐衝擊性之觀點而言,較佳為上述熱硬化性化合物之含量較多。就使導電材料之硬化性及黏度更良好,進一步提高連接可靠性之觀點而言,上述導電材料100重量%中,上述環氧化合物之含量較佳為10重量%以上,更佳為15重量%以上,且較佳為50重量%以下,更佳為30重量%以下。 就進一步抑制黑色煙灰之產生之觀點而言,上述導電材料100重量%中,上述具有異三聚氰酸骨架之熱硬化性成分之含量較佳為5重量%以上,更佳為10重量%以上,且較佳為30重量%以下,更佳為20重量%以下。 就進一步抑制黑色煙灰之產生之觀點而言,上述導電材料100重量%中,上述具有異三聚氰酸骨架之熱硬化性化合物之含量較佳為5重量%以上,更佳為10重量%以上,且較佳為30重量%以下,更佳為20重量%以下。 就提高導電材料之硬化性、提高連接可靠性之觀點而言,上述導電材料100重量%中,上述不具有異三聚氰酸骨架之熱硬化性化合物之含量較佳為1重量%以上,更佳為2重量%以上,且較佳為20重量%以下,更佳為15重量%以下。 就進一步抑制黑色煙灰之產生之觀點而言,上述具有異三聚氰酸骨架之化合物之含量相對於上述助焊劑之含量之重量比(具有異三聚氰酸骨架之化合物之含量/助焊劑之含量)較佳為0.5以上,更佳為3以上,且較佳為20以下,更佳為15以下,亦可為1以下。於上述助焊劑含有具有異三聚氰酸骨架之助焊劑之情形時,上述助焊劑之含量中亦包含具有異三聚氰酸骨架之助焊劑之含量。 就進一步抑制黑色煙灰之產生之觀點而言,上述具有異三聚氰酸骨架之熱硬化性成分之含量相對於上述助焊劑之含量之重量比(具有異三聚氰酸骨架之熱硬化性成分之含量/助焊劑之含量)較佳為0.5以上,更佳為3以上,且較佳為20以下,更佳為15以下。 就進一步抑制黑色煙灰之產生之觀點而言,上述具有異三聚氰酸骨架之熱硬化性化合物之含量相對於上述助焊劑之含量之重量比(具有異三聚氰酸骨架之熱硬化性化合物之含量/助焊劑之含量)較佳為0.5以上,更佳為3以上,且較佳為20以下,更佳為15以下。 就進一步抑制黑色煙灰之產生之觀點而言,上述具有異三聚氰酸骨架之化合物之含量相對於上述導電性粒子之含量之重量比(具有異三聚氰酸骨架之化合物之含量/導電性粒子之含量)較佳為0.05以上,更佳為0.1以上,且較佳為0.5以下,更佳為0.4以下。 就進一步抑制黑色煙灰之產生之觀點而言,上述具有異三聚氰酸骨架之熱硬化性成分之含量相對於上述導電性粒子之含量之重量比(具有異三聚氰酸骨架之熱硬化性成分之含量/導電性粒子之含量)較佳為0.05以上,更佳為0.1以上,且較佳為0.5以下,更佳為0.4以下。 就進一步抑制黑色煙灰之產生之觀點而言,上述具有異三聚氰酸骨架之熱硬化性化合物之含量相對於上述導電性粒子之含量之重量比(具有異三聚氰酸骨架之熱硬化性化合物之含量/導電性粒子之含量)較佳為0.05以上,更佳為0.1以上,且較佳為0.5以下,更佳為0.4以下。 (熱硬化劑) 上述熱硬化劑係使上述熱硬化性化合物進行熱硬化。作為上述熱硬化劑,有咪唑硬化劑、酚系硬化劑、硫醇硬化劑、胺硬化劑、酸酐硬化劑、熱陽離子起始劑(熱陽離子硬化劑)及熱自由基產生劑等。上述熱硬化劑可僅使用一種,亦可併用兩種以上。 就進一步抑制黑色煙灰之產生之觀點而言,較佳為具有異三聚氰酸骨架之熱硬化劑或硫醇硬化劑。就進一步抑制黑色煙灰之產生之觀點而言,較佳為具有異三聚氰酸骨架之熱硬化劑,較佳為硫醇硬化劑。上述導電材料亦可含有不具有異三聚氰酸骨架之熱硬化劑。 作為上述咪唑硬化劑,並無特別限定,可列舉:2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰乙基-2-苯基咪唑、偏苯三酸1-氰乙基-2-苯基咪唑鎓鹽、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三及2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三異三聚氰酸加成物等。 作為上述硫醇硬化劑,並無特別限定,可列舉:三羥甲基丙烷三(3-巰基丙酸酯)、季戊四醇四(3-巰基丙酸酯)及二季戊四醇六(3-巰基丙酸酯)等。 上述硫醇硬化劑之溶解度參數較佳為9.5以上,且較佳為12以下。上述溶解度參數係藉由Fedors法進行計算。例如,三羥甲基丙烷三(3-巰基丙酸酯)之溶解度參數為9.6,二季戊四醇六(3-巰基丙酸酯)之溶解度參數為11.4。 作為上述胺硬化劑,並無特別限定,可列舉:己二胺、辛二胺、癸二胺、3,9-雙(3-胺基丙基)-2,4,8,10-四螺[5.5]十一烷、雙(4-胺基環己基)甲烷、間苯二胺及二胺基二苯基碸等。 作為上述熱陽離子起始劑,可列舉:錪系陽離子硬化劑、系陽離子硬化劑及鋶系陽離子硬化劑等。作為上述錪系陽離子硬化劑,可列舉六氟磷酸雙(4-第三丁基苯基)錪等。作為上述系陽離子硬化劑,可列舉四氟硼酸三甲基等。作為上述鋶系陽離子硬化劑,可列舉六氟磷酸三(對甲苯基)鋶等。 作為上述熱自由基產生劑,並無特別限定,可列舉偶氮化合物及有機過氧化物等。作為上述偶氮化合物,可列舉偶氮二異丁腈(AIBN)等。作為上述有機過氧化物,可列舉過氧化二第三丁基及過氧化甲基乙基酮等。 作為上述具有異三聚氰酸骨架之熱硬化劑,可列舉異氰尿酸三[(3-巰基丙醯氧基)乙基]酯等。 上述熱硬化劑之反應起始溫度較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為250℃以下,更佳為200℃以下,進而較佳為150℃以下,尤佳為140℃以下,若上述熱硬化劑之反應起始溫度為上述下限以上及上述上限以下,則焊料被更有效率地配置於電極上。上述熱硬化劑之反應起始溫度尤佳為80℃以上、140℃以下。 就將焊料更有效率地配置於電極上之觀點而言,上述熱硬化劑之反應起始溫度較佳為高於上述導電性粒子中之焊料之熔點,更佳為高5℃以上,進而較佳為高10℃以上。 上述熱硬化劑之反應起始溫度意指DSC(differential scanning calorimetry,示差掃描熱量測定)中之放熱峰開始上升之溫度。 就進一步抑制黑色煙灰之產生之觀點而言,上述具有異三聚氰酸骨架之熱硬化劑之分子量較佳為200以上,更佳為300以上,且較佳為1000以下,更佳為600以下。 上述熱硬化劑之含量並無特別限定。相對於上述熱硬化性化合物100重量份,上述熱硬化劑之含量較佳為0.01重量份以上,更佳為1重量份以上,且較佳為200重量份以下,更佳為100重量份以下,進而較佳為75重量份以下。若熱硬化劑之含量為上述下限以上,則容易使導電材料充分進行硬化。若熱硬化劑之含量為上述上限以下,則硬化後未參與硬化之剩餘之熱硬化劑不易殘存,且硬化物之耐熱性進一步提高。 就進一步抑制黑色煙灰之產生之觀點而言,上述導電材料100重量%中,上述具有異三聚氰酸骨架之熱硬化劑之含量較佳為5重量%以上,更佳為10重量%以上,且較佳為30重量%以下,更佳為20重量%以下。 (磷酸化合物) 就使焊料更有效率地聚集於電極上之觀點而言,較佳為上述導電材料含有磷酸化合物。上述磷酸化合物可僅使用一種,亦可併用兩種以上。 就使焊料更有效率地聚集於電極上之觀點而言,上述磷酸化合物較佳為亞磷酸或亞磷酸酯,更佳為亞磷酸酯,更佳為亞磷酸酯為下述式(11)所表示之亞磷酸酯。 [化7]上述式(11)中,R較佳為碳數1以上、15以下之有機基,更佳為碳數6以上、15以下之有機基。 上述磷酸化合物較佳為具有1個以上碳數6以上、15以下之有機基,更佳為具有1個以上碳數6以上、15以下之烴基,尤佳為具有1個以上碳數6以上、15以下之芳基。上述磷酸化合物亦可具有2個該等各基。較佳為尤其具有1個以上芳基之亞磷酸,更佳為具有2個芳基之亞磷酸,進而較佳為二苯基亞磷酸或二苄基亞磷酸。具有2個芳基之亞磷酸可具有1個苯基,亦可具有2個苯基,可具有1個苄基,亦可具有2個苄基。 測定使上述磷酸化合物1 g溶解於水10 g中而成之水溶液之pH值。上述水溶液之pH值較佳為3.5以上,更佳為3.7以上,進而較佳為5以上,且較佳為6以下。上述水溶液之pH值亦可為5以下。若上述水溶液之pH值為上述下限以上及上述上限以下,則焊料更有效率地聚集於電極上。上述水溶液之pH值可超過3,亦可超過4,亦可超過5,亦可為7以上。 上述水溶液之pH值可使用pH值計(HORIBA公司製造之「D-72」)、電極ToupH電極9615-10D進行測定。 就使焊料更有效率地聚集於電極上之觀點而言,上述亞磷酸酯較佳為亞磷酸單酯或亞磷酸二酯。就使焊料更有效率地聚集於電極上之觀點而言,上述磷酸化合物較佳為不具有(甲基)丙烯醯基,較佳為不為(甲基)丙烯酸酯化合物。 上述磷酸化合物可為磷酸或磷酸化合物與咪唑化合物之反應物。 就使焊料更有效率地配置於電極上,而進一步提高導通可靠性之觀點而言,上述導電材料100重量%中,上述磷酸化合物之含量較佳為0.1重量%以上,更佳為1重量%以上,且較佳為15重量%以下,更佳為10重量%以下。 (助焊劑) 上述導電材料含有助焊劑。藉由使用助焊劑,可將焊料更有效地配置於電極上。於焊料因助焊劑而受到助焊作用時,容易產生黑色煙灰。然而,於本發明中,由於使用具有異三聚氰酸骨架之化合物,因此可抑制黑色煙灰之產生。上述助焊劑並無特別限定。作為助焊劑,可使用通常用於焊料接合等之助焊劑。 作為上述助焊劑,例如可列舉:氯化鋅、氯化鋅與無機鹵化物之混合物、氯化鋅與無機酸之混合物、熔融鹽、磷酸、磷酸之衍生物、有機鹵化物、肼、有機酸及松脂等。上述助焊劑可僅使用一種,亦可併用兩種以上。 作為上述熔融鹽,可列舉氯化銨等。作為上述有機酸,可列舉乳酸、檸檬酸、硬脂酸、麩胺酸及戊二酸等。作為上述松脂,可列舉活化松脂及非活化松脂等。上述助焊劑較佳為具有2個以上羧基之有機酸或松脂。上述助焊劑可為具有2個以上羧基之有機酸,亦可為松脂。藉由使用具有2個以上羧基之有機酸、松脂,電極間之導通可靠性進一步提高。 上述松脂係以松香酸為主成分之松香類。助焊劑較佳為松香類,更佳為松香酸。藉由使用該較佳之助焊劑,電極間之導通可靠性進一步提高。 就進一步抑制黑色煙灰之產生之觀點而言,較佳為具有異三聚氰酸骨架之助焊劑。上述導電材料亦可含有不具有異三聚氰酸骨架之助焊劑。 作為上述具有異三聚氰酸骨架之助焊劑,可列舉具有羧基與異三聚氰酸骨架之化合物等。作為上述具有異三聚氰酸骨架之助焊劑之市售品,可列舉CIC酸及MACIC-1(四國化成工業公司製造)等。上述導電材料亦可含有不具有異三聚氰酸骨架之助焊劑。 上述助焊劑之活性溫度(熔點)較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為200℃以下,更佳為190℃以下,進而較佳為160℃以下,進而更佳為150℃以下,進而更佳為140℃以下。若上述助焊劑之活性溫度為上述下限以上及上述上限以下,則更有效地發揮出助焊劑效果,而可將焊料更有效率地配置於電極上。上述助焊劑之活性溫度(熔點)較佳為80℃以上、190℃以下。上述助焊劑之活性溫度(熔點)尤佳為80℃以上、140℃以下。 作為助焊劑之活性溫度(熔點)為80℃以上、190℃以下之上述助焊劑,可列舉:琥珀酸(熔點186℃)、戊二酸(熔點96℃)、己二酸(熔點152℃)、庚二酸(熔點104℃)、辛二酸(熔點142℃)等二羧酸;苯甲酸(熔點122℃)、蘋果酸(熔點130℃)等。 又,上述助焊劑之沸點較佳為200℃以下。 就將焊料更有效率地配置於電極上之觀點而言,上述助焊劑之熔點較佳為高於上述導電性粒子中之焊料之熔點,更佳為高5℃以上,進而較佳為高10℃以上。 就將焊料更有效率地配置於電極上之觀點而言,上述助焊劑之熔點較佳為高於上述熱硬化劑之反應起始溫度,更佳為高5℃以上,進而較佳為高10℃以上。 上述助焊劑可分散於導電材料中,亦可附著於導電性粒子之表面上。 藉由助焊劑之熔點高於焊料之熔點,可使焊料有效率地凝集於電極部分。其原因在於,於接合時賦予熱之情形時,若將形成於連接對象構件上之電極與電極周邊之連接對象構件之部分進行比較,則電極部分之導熱率高於電極周邊之連接對象構件部分之導熱率,由此電極部分之升溫較快。於超過導電性粒子中之焊料之熔點之階段,雖然導電性粒子中之焊料會熔解,但由於未達到助焊劑之熔點(活性溫度),因此不會去除形成於表面之氧化覆膜。於該狀態下,由於電極部分之溫度先達到助焊劑之熔點(活性溫度),因此優先去除到達電極上之導電性粒子中之焊料表面之氧化覆膜,或由經活化之助焊劑將導電性粒子中之焊料表面之電荷中和,藉此焊料可潤濕擴散至電極之表面上。藉此,可使焊料有效率地凝集於電極上。 上述助焊劑較佳為藉由加熱而釋放陽離子之助焊劑。藉由使用藉由加熱而釋放陽離子之助焊劑,可將焊料更有效率地配置於電極上。 作為上述藉由加熱而釋放陽離子之助焊劑,可列舉上述熱陽離子起始劑。 就進一步抑制黑色煙灰之產生之觀點而言,上述具有異三聚氰酸骨架之助焊劑之分子量較佳為200以上,更佳為300以上,且較佳為1000以下,更佳為600以下。 上述導電材料100重量%中,上述助焊劑之含量較佳為0.5重量%以上,且較佳為30重量%以下,更佳為25重量%以下。若助焊劑之含量為上述下限以上及上述上限以下,則變得更難以於焊料及電極之表面形成氧化覆膜,進而可更有效地去除形成於焊料及電極之表面之氧化覆膜。 就進一步抑制黑色煙灰之產生之觀點而言,上述導電材料100重量%中,上述具有異三聚氰酸骨架之助焊劑之含量較佳為5重量%以上,更佳為10重量%以上,且較佳為30重量%以下,更佳為20重量%以下。 (其他成分) 上述導電材料亦可視需要含有例如填充劑、增量劑、軟化劑、塑化劑、聚合觸媒、硬化觸媒、著色劑、抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、潤滑劑、抗靜電劑及阻燃劑等各種添加劑。 (連接構造體及連接構造體之製造方法) 本發明之連接構造體具備表面具有至少1個第1電極之第1連接對象構件、表面具有至少1個第2電極之第2連接對象構件及將上述第1連接對象構件與上述第2連接對象構件連接之連接部。於本發明之連接構造體中,上述連接部之材料為上述之導電材料,上述連接部為上述之導電材料之硬化物。於本發明之連接構造體中,上述第1電極與上述第2電極利用上述連接部中之焊料部進行電性連接。 上述連接構造體之製造方法包括:使用上述之導電材料,將上述導電材料配置於表面具有至少1個第1電極之第1連接對象構件之表面上之步驟;以上述第1電極與上述第2電極相對向之方式,將表面具有至少1個第2電極之第2連接對象構件配置於上述導電材料之與上述第1連接對象構件側相反之表面上之步驟;藉由將上述導電材料加熱至上述導電性粒子中之焊料之熔點以上,而藉由上述導電材料形成將上述第1連接對象構件與上述第2連接對象構件連接之連接部,且利用上述連接部中之焊料部將上述第1電極與上述第2電極進行電性連接之步驟。較佳為將上述導電材料加熱至上述熱硬化性成分、熱硬化性化合物之硬化溫度以上。 於本發明之連接構造體及上述連接構造體之製造方法中,由於使用特定之導電材料,因此複數個導電性粒子中之焊料容易聚集於第1電極與第2電極之間,而可將焊料有效率地配置於電極(線)上。又,難以使焊料之一部分配置於未形成有電極之區域(間隔),而可使配置於未形成有電極之區域之焊料之量非常少。因此,可提高第1電極與第2電極之間之導通可靠性。並且可防止不得連接之橫向鄰接之電極間之電性連接,而可提高絕緣可靠性。 又,為了將複數個導電性粒子中之焊料有效率地配置於電極上,且使配置於未形成有電極之區域之焊料之量非常少,較佳為使用導電糊而非導電膜。 電極間之焊料部之厚度較佳為10 μm以上,更佳為20 μm以上,且較佳為100 μm以下,更佳為80 μm以下。電極之表面上之焊料潤濕面積(露出電極之面積100%中與焊料相接之面積)較佳為50%以上,更佳為60%以上,進而較佳為70%以上,且較佳為100%以下。 於本發明之連接構造體之製造方法中,於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,較佳為不進行加壓,而對上述導電材料施加上述第2連接對象構件之重量,於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,較佳為不對上述導電材料施加超過上述第2連接對象構件之重量之力之加壓壓力。於該等情形時,可進一步提高複數個焊料部中焊料量之均一性。進而可更有效地加厚焊料部之厚度,複數個導電性粒子中之焊料變得容易大量聚集於電極間,而可將複數個導電性粒子中之焊料更有效率地配置於電極(線)上。又,難以使複數個導電性粒子中之焊料之一部分配置於未形成有電極之區域(間隔),而可使配置於未形成有電極之區域之導電性粒子中之焊料之量更少。因此,可進一步提高電極間之導通可靠性。並且,可進一步防止不得連接之橫向鄰接之電極間之電性連接,而可進一步提高絕緣可靠性。 進而亦發現,於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,若不進行加壓而對上述導電材料施加上述第2連接對象構件之重量,則於形成連接部前配置於未形成有電極之區域(間隔)之焊料更容易聚集於第1電極與第2電極之間,而可將複數個導電性粒子中之焊料更有效率地配置於電極(線)上。於本發明中,將使用導電糊而非導電膜之構成、與不進行加壓而對上述導電糊施加上述第2連接對象構件之重量之構成組合而採用,對以更高水準獲得本發明之效果而言,具有較大之意義。 再者,於WO2008/023452A1中,記載有就擠壓焊料粉使其流至電極表面並高效率地移動之觀點而言,較佳為於接著時以特定之壓力進行加壓,且記載有就進一步確實地形成焊料區域之觀點而言,加壓壓力例如設為0 MPa以上,較佳為設為1 MPa以上,進而記載有對接著帶刻意施加之壓力可為0 MPa,亦可藉由配置於接著帶上之構件之自身重量對接著帶施加特定之壓力。WO2008/023452A1中記載有對接著帶刻意施加之壓力可為0 MPa,但關於賦予超過0 MPa之壓力之情形與設為0 MPa之情形之效果之差異,並無任何記載。又,WO2008/023452A1中關於使用糊狀之導電糊而非膜狀之重要性,亦無任何認識。 又,若使用導電糊而非導電膜,則變得容易藉由導電糊之塗佈量調整連接部及焊料部之厚度。另一方面,於導電膜方面,存在為了改變或調整連接部之厚度而必須準備不同厚度之導電膜、或準備特定厚度之導電膜之問題。又,於導電膜方面,與導電糊相比,有於焊料之熔融溫度下無法充分降低導電膜之熔融黏度,容易阻礙焊料之凝集之傾向。 以下,一面參照圖式,一面對本發明之具體之實施形態進行說明。 圖1係模式性地表示使用本發明之一實施形態之導電材料而獲得之連接構造體之剖面圖。 圖1所示之連接構造體1具備第1連接對象構件2、第2連接對象構件3、及將第1連接對象構件2與第2連接對象構件3連接之連接部4。連接部4係由上述之導電材料所形成。於本實施形態中,導電材料含有焊料粒子作為導電性粒子。 連接部4具有複數個焊料粒子聚集而互相接合之焊料部4A、及使熱硬化性成分進行熱硬化而成之硬化物部4B。 第1連接對象構件2於表面(上表面)具有複數個第1電極2a。第2連接對象構件3於表面(下表面)具有複數個第2電極3a。第1電極2a與第2電極3a利用焊料部4A而電性連接。因此,第1連接對象構件2與第2連接對象構件3利用焊料部4A而電性連接。再者,於連接部4,於與聚集於第1電極2a與第2電極3a間之焊料部4A不同之區域(硬化物部4B部分)不存在焊料。於與焊料部4A不同之區域(硬化物部4B部分)不存在與焊料部4A分離之焊料。再者,若為少量,則亦可於與聚集於第1電極2a與第2電極3a間之焊料部4A不同之區域(硬化物部4B部分)存在焊料。 如圖1所示,於連接構造體1中,複數個焊料粒子聚集於第1電極2a與第2電極3a之間,複數個焊料粒子熔融後,焊料粒子之熔融物於電極之表面潤濕擴散後固化,而形成焊料部4A。因此,焊料部4A與第1電極2a、及焊料部4A與第2電極3a之連接面積增大。即,藉由使用焊料粒子,與使用導電部之外表面部分為鎳、金或銅等金屬之導電性粒子之情形相比,焊料部4A與第1電極2a、及焊料部4A與第2電極3a之接觸面積增大。因此,連接構造體1之導通可靠性及連接可靠性提高。 再者,助焊劑通常會因加熱而逐漸失活。 再者,於圖1所示之連接構造體1中,焊料部4A全部位於第1、第2電極2a、3a間之相對向之區域。圖3所示之變化例之連接構造體1X中,僅連接部4X不同於圖1所示之連接構造體1。連接部4X具有焊料部4XA與硬化物部4XB。如連接構造體1X般,亦可為焊料部4XA之大部分位於第1、第2電極2a、3a相對向之區域,而焊料部4XA之一部分自第1、第2電極2a、3a相對向之區域向側向伸出。自第1、第2電極2a、3a相對向之區域向側向伸出之焊料部4XA係焊料部4XA之一部分,並非與焊料部4XA分離之焊料。再者,於本實施形態中,可使與焊料部分離之焊料之量較少,但與焊料部分離之焊料亦可存在於硬化物部中。 若減少焊料粒子之使用量,則變得容易獲得連接構造體1。若增多焊料粒子之使用量,則變得容易獲得連接構造體1X。 就進一步提高導通可靠性之觀點而言,於沿上述第1電極、上述連接部及上述第2電極之積層方向觀察上述第1電極與上述第2電極之互相對向之部分時,較佳為於上述第1電極與上述第2電極之互相對向之部分之面積100%中之50%以上(更佳為60%以上,進而較佳為70%以上,尤佳為80%以上,最佳為90%以上)配置上述連接部中之焊料部。 繼而,對使用本發明之一實施形態之導電材料而製造連接構造體1之方法之一例進行說明。 首先,準備表面(上表面)具有第1電極2a之第1連接對象構件2。其次,如圖2(a)所示,於第1連接對象構件2之表面上配置含有熱硬化性成分11B與複數個焊料粒子11A之導電材料11(第1步驟)。所使用之導電材料11含有熱硬化性化合物與熱硬化劑作為熱硬化性成分11B。 於第1連接對象構件2之設置有第1電極2a之表面上配置導電材料11。於配置導電材料11後,焊料粒子11A被配置於第1電極2a(線)上、及未形成有第1電極2a之區域(間隔)上之兩者。 作為導電材料11之配置方法,並無特別限定,可列舉利用分注器所進行之塗佈、網版印刷、及利用噴墨裝置所進行之噴出等。 又,準備表面(下表面)具有第2電極3a之第2連接對象構件3。其次,如圖2(b)所示,於第1連接對象構件2之表面上之導電材料11中,於導電材料11之與第1連接對象構件2側相反之側之表面上配置第2連接對象構件3(第2步驟)。於導電材料11之表面上,自第2電極3a側起配置第2連接對象構件3。此時,使第1電極2a與第2電極3a相對向。 其次,將導電材料11加熱至焊料粒子11A之熔點以上(第3步驟)。較佳為將導電材料11加熱至熱硬化性成分11B(黏合劑)之硬化溫度以上。於該加熱時,未形成有電極之區域所存在之焊料粒子11A會聚集於第1電極2a與第2電極3a之間(自凝集效應)。於使用導電糊而非導電膜之情形時,焊料粒子11A有效地聚集於第1電極2a與第2電極3a之間。又,焊料粒子11A熔融而互相接合。又,熱硬化性成分11B發生熱硬化。其結果為,如圖2(c)所示,利用導電材料11而形成將第1連接對象構件2與第2連接對象構件3連接之連接部4。利用導電材料11而形成連接部4,利用複數個焊料粒子11A進行接合而形成焊料部4A,利用熱硬化性成分11B進行熱硬化而形成硬化物部4B。 於本實施形態中,較佳為於上述第2步驟及上述第3步驟中不進行加壓。於該情形時,係對導電材料11施加第2連接對象構件3之重量。因此,於形成連接部4時,焊料粒子11A有效地聚集於第1電極2a與第2電極3a之間。再者,若於上述第2步驟及上述第3步驟中之至少一者中進行加壓,則使焊料粒子聚集於第1電極與第2電極之間之作用受到阻礙之傾向變高。 又,於本實施形態中,由於未進行加壓,因此於將第2連接對象構件重疊於塗佈有導電材料之第1連接對象構件時,於第1連接對象構件之電極與第2連接對象構件之電極之對準發生錯位之狀態下,即便於將第1連接對象構件與第2連接對象構件重疊之情形時,亦可修正該錯位,而將第1連接對象構件之電極與第2連接對象構件之電極連接(自動對準效應)。其原因在於,由於在第1連接對象構件之電極與第2連接對象構件之電極之間發生自凝集之熔融之焊料於第1連接對象構件之電極與第2連接對象構件之電極之間之焊料與導電材料之其他成分相接之面積變得最小時於能量方面會變得穩定,因此成為該最小面積之連接構造即已對準之連接構造之力發揮作用。此時,較理想為導電材料未硬化,及於該溫度、時間之條件下導電材料之導電性粒子以外之成分之黏度充分低。 如此而獲得圖1所示之連接構造體1。再者,上述第2步驟與上述第3步驟可連續進行。又,亦可於進行上述第2步驟後,將所獲得之第1連接對象構件2與導電材料11與第2連接對象構件3之積層體移動至加熱部,再進行上述第3步驟。為了進行上述加熱,可將上述積層體配置於加熱構件上,亦可將上述積層體配置於經加熱之空間內。 上述第3步驟中之上述加熱溫度較佳為140℃以上,更佳為160℃以上,且較佳為450℃以下,更佳為250℃以下,進而較佳為200℃以下。 作為上述第3步驟中之加熱方法,可列舉使用回焊爐或使用烘箱將連接構造體整體加熱至焊料之熔點以上及熱硬化性成分之硬化溫度以上之方法,或僅將連接構造體之連接部局部加熱至焊料之熔點以上及熱硬化性成分之硬化溫度以上之方法。 上述第1、第2連接對象構件並無特別限定。作為上述第1、第2連接對象構件,具體而言,可列舉:半導體晶片、半導體封裝、LED(Light Emitting Diode,發光二極體)晶片、LED封裝、電容器及二極體等電子零件;及樹脂膜、印刷基板、軟性印刷基板、軟性扁平電纜、剛性軟性基板、環氧玻璃基板及玻璃基板等電路基板等電子零件等。上述第1、第2連接對象構件較佳為電子零件。 較佳為上述第1連接對象構件及上述第2連接對象構件中之至少一者為樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板。較佳為上述第2連接對象構件為樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板。樹脂膜、軟性印刷基板、軟性扁平電纜及剛性軟性基板具有柔軟性較高、相對輕量之性質。於將導電膜用於此種連接對象構件之連接之情形時,有焊料難以聚集於電極上之傾向。相對於此,藉由使用導電糊,即便使用樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板,亦可藉由使焊料有效率地聚集於電極上,而充分提高電極間之導通可靠性。於使用樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板之情形時,與使用半導體晶片等其他連接對象構件之情形相比,可更有效地獲得因不進行加壓引起之電極間之導通可靠性之提高效果。 上述連接對象構件之形態中存在周圍排列或面積陣列等。作為各構件之特徵,周圍排列基板中電極僅存在於基板之外周部。面積陣列基板中電極存在於面內。 作為設置於上述連接對象構件之電極,可列舉金電極、鎳電極、錫電極、鋁電極、銅電極、鉬電極、銀電極、SUS電極、及鎢電極等金屬電極。於上述連接對象構件為軟性印刷基板之情形時,上述電極較佳為金電極、鎳電極、錫電極、銀電極或銅電極。於上述連接對象構件為玻璃基板之情形時,上述電極較佳為鋁電極、銅電極、鉬電極、銀電極或鎢電極。再者,於上述電極為鋁電極之情形時,可為僅由鋁形成之電極,亦可為於金屬氧化物層之表面積層有鋁層之電極。作為上述金屬氧化物層之材料,可列舉摻雜有三價金屬元素之氧化銦及摻雜有三價金屬元素之氧化鋅等。作為上述三價金屬元素,可列舉Sn、Al及Ga等。 上述連接對象構件之形態中存在周圍排列或面積陣列等。作為各構件之特徵,周圍排列基板中電極僅存在於基板之外周部。面積陣列基板中電極存在於面內。 以下,列舉實施例及比較例對本發明進行具體說明。本發明並不僅限定於以下之實施例。 熱硬化性化合物: 三菱化學公司製造之「YL980」,雙酚A型環氧樹脂 日產化學工業公司製造之「TEPIC-PAS」,具有異三聚氰酸骨架之環氧化合物 TEPIC-PAS之改性物:將日產化學工業公司製造之「TEPIC」之環氧基轉化為環硫乙烷基而成之化合物(合成品),具有異三聚氰酸骨架之環硫化合物 日產化學工業公司製造之「TEPIC-VL」 日產化學工業公司製造之「TEPIC-UC」 熱硬化劑: 旭化成E-MATERIALS公司製造之「HXA3922HP」 SC有機化學工業股份有限公司製造之「TEMPIC」 硬化促進劑: 四國化成工業公司製造之「2MA-OK」,咪唑硬化促進劑 磷酸化合物: 城北化學工業公司製造之「JP260」,亞磷酸二苯酯(diphenyl hydrogen phosphate),(C6 H5 -O-)2 P(=O)H 助焊劑: 戊二酸 四國化成工業公司製造之「CIC」 四國化成工業公司製造之「MACIC-1」 導電性粒子: SnBi焊料粒子(平均粒徑30 μm),三井金屬公司製造,Sn42Bi58 (實施例1~11及比較例1) (1)各向異性導電糊之製作 以下述之表1、2所示之調配量調配下述之表1、2所示之成分,而獲得各向異性導電糊。 (2)第1連接構造體(面積陣列基板)之製作 作為第1連接對象構件,準備於半導體晶片本體(尺寸5×5 mm、厚度0.4 mm)之表面以400 μm間距按照面積陣列配置有250 μm之銅電極,且於最表面形成有鈍化膜(聚醯亞胺、厚度5 μm、電極部之開口徑200 μm)之半導體晶片。關於銅電極之個數,每1個半導體晶片為10個×10個之合計100個。 作為第2連接對象構件,準備於環氧玻璃基板本體(尺寸20×20 mm、厚度1.2 mm、材質FR-4)之表面以相對於第1連接對象構件之電極成為相同之圖案之方式配置有銅電極,且於未配置銅電極之區域形成有阻焊膜之環氧玻璃基板。銅電極之表面與阻焊膜之表面之階差為15 μm,阻焊膜與銅電極相比更突出。 以厚度成為100 μm之方式於上述環氧玻璃基板之上表面塗敷剛製作後之各向異性導電糊,而形成各向異性導電糊層。其次,以電極彼此相對向之方式於各向異性導電糊層之上表面積層半導體晶片。對各向異性導電糊層施加上述半導體晶片之重量。以自該狀態起各向異性導電糊層之溫度於自開始升溫起5秒後成為139℃(焊料之熔點)之方式進行加熱。進而,以自開始升溫起15秒後各向異性導電糊層之溫度成為160℃之方式進行加熱,使各向異性導電糊硬化,而獲得連接構造體。於加熱時不進行加壓。 (3)第2連接構造體(周圍排列基板)之製作 作為第1連接對象構件,準備於半導體晶片本體(尺寸5×5 mm、厚度0.4 mm)之表面以400 μm間距在晶片外周部配置(周圍排列)有250 μm之銅電極,且於最表面形成有鈍化膜(聚醯亞胺、厚度5 μm、電極部之開口徑200 μm)之半導體晶片。關於銅電極之個數,每1個半導體晶片為10個×4邊之合計36個。 作為第2連接對象構件,於環氧玻璃基板本體(尺寸20×20 mm、厚度1.2 mm、材質FR-4)之表面以相對於第1連接對象構件之電極成為相同之圖案之方式配置有銅電極,且於未配置銅電極之區域形成有阻焊膜之銅電極之表面與阻焊膜之表面之階差為15 μm,阻焊膜與銅電極相比更突出。 以厚度成為100 μm之方式於上述環氧玻璃基板之上表面之周圍排列部分塗敷剛製作後之各向異性導電糊,而形成各向異性導電糊層。其次,以電極彼此相對向之方式於各向異性導電糊層之上表面積層半導體晶片。對各向異性導電糊層施加上述半導體晶片之重量。以自該狀態起各向異性導電糊層之溫度於自開始升溫起5秒後成為139℃(焊料之熔點)之方式進行加熱。進而,以自開始升溫起15秒後各向異性導電糊層之溫度成為160℃之方式進行加熱,使各向異性導電糊硬化,而獲得連接構造體。於加熱時不進行加壓。 (評價) (1)黏度 使用STRESSTECH(EOLOGICA公司製造),於應變控制1 rad、頻率1 Hz、升溫速度20℃/分鐘、及測定溫度範圍40~200℃之條件下測定各向異性導電糊於導電性粒子中之焊料之熔點℃下之黏度(ηmp)。 (2)黑色煙灰之產生 評價於所獲得之第1、第2連接構造體之連接部(硬化物部)中是否含有源自焊料之黑色煙灰。按照以下基準判定黑色煙灰之產生。 [黑色煙灰之判定基準] ○○○:未產生黑色煙灰,且亦無輕微著色之部位 ○○:未產生黑色煙灰,且存在輕微著色之部位 ○:產生極少量黑色煙灰(不會影響連接電阻之程度) △:產生少量黑色煙灰(稍微影響連接電阻之程度) ×:產生黑色煙灰(非常影響連接電阻之程度) (3)電極上之焊料之配置精度 於所獲得之第1、第2連接構造體中,對沿第1電極、連接部及第2電極之積層方向觀察第1電極與第2電極之互相對向之部分時第1電極與第2電極之互相對向之部分之面積100%中之配置有連接部中之焊料部之面積之比例X進行評價。按照下述基準判定電極上之焊料之配置精度。 [電極上之焊料之配置精度之判定基準] ○○○:比例X為95%以上 ○○:比例X為90%以上、未達95% ○:比例X為80%以上、未達90% △:比例X為60%以上、未達80% ×:比例X未達60% (4)上下之電極間之導通可靠性 於所獲得之第1、第2連接構造體(n=15個)中,藉由四端子法分別測定上下之電極間之連接電阻。計算出連接電阻之平均值。再者,根據電壓=電流×電阻之關係,藉由測定流通恆定電流時之電壓,可求出連接電阻。按照下述基準判定導通可靠性。 [導通可靠性之判定基準] ○○:連接電阻之平均值為8.0 Ω以下 ○:連接電阻之平均值超過8.0 Ω且為10.0 Ω以下 △:連接電阻之平均值超過10.0 Ω且為15.0 Ω以下 ×:連接電阻之平均值超過15.0 Ω (5)鄰接之電極間之絕緣可靠性 於所獲得之第1、第2連接構造體(n=15個)中,於溫度85℃、及濕度85%之環境中放置100小時後,對鄰接之電極間施加5 V電壓,於25個部位測定電阻值。按照下述基準判定絕緣可靠性。 [絕緣可靠性之判定基準] ○○:連接電阻之平均值為107 Ω以上 ○:連接電阻之平均值為106 Ω以上且未達107 Ω △:連接電阻之平均值為105 Ω以上且未達106 Ω ×:連接電阻之平均值未達105 Ω 將結果示於下述之表1、2中。 [表1] [表2] 於使用軟性印刷基板、樹脂膜、軟性扁平電纜及剛性軟性基板之情形時亦可見同樣之傾向。Hereinafter, the details of the present invention will be described. (Conductive Material) The electrically conductive material of the present invention contains a plurality of electrically conductive particles and a binder. The conductive particles have a conductive portion. The conductive particles have solder on the outer surface portion of the conductive portion. The solder is contained in the conductive portion and is part or all of the conductive portion. The binder is a component other than the conductive particles contained in the conductive material. The conductive material of the present invention contains a thermosetting component and a flux as the above-mentioned binder. The thermosetting component contains a thermosetting compound. The thermosetting component preferably contains a thermosetting agent. The conductive material of the present invention contains a compound having a hetero-cyanuric acid skeleton as the above-mentioned thermosetting component or the above-mentioned flux. The compound having an iso-cyanuric acid skeleton may be a thermosetting component having a hetero-cyanuric acid skeleton, a flux having a hetero-cyanuric acid skeleton, or a hetero-cyanuric acid skeleton. A thermosetting compound or a thermal hardener having a hetero-cyanuric acid skeleton. The thermosetting component having the iso-cyanuric acid skeleton may be a thermosetting compound having a hetero-cyanuric acid skeleton or a thermosetting agent having a hetero-cyanuric acid skeleton. In the conductive material of the present invention, the conductive material under the melting point of the solder in the conductive particles has a viscosity of 0.1 Pa·s or more and 20 Pa·s or less. In the present invention, since the above configuration is provided, generation of black soot derived from solder in the cured material of the conductive material can be suppressed. When black soot is contained in the cured material of the conductive material, the connection resistance between the electrodes becomes high, and the conduction reliability is lowered. In the present invention, since the generation of black soot can be suppressed, the connection resistance between the electrodes can be reduced, and the conduction reliability can be improved. Further, in the present invention, since the above-described configuration is provided, in particular, the viscosity of the conductive material at the melting point of the solder in the conductive particles is within the above range, so that the solder selectivity in the conductive particles can be selected. Placed on the electrode. When the electrodes are electrically connected to each other, the solder in the conductive particles is likely to be collected between the electrodes facing up and down, and the solder in the conductive particles can be efficiently disposed on the electrodes (wires). Further, it is difficult to arrange one of the solders in the conductive particles in a region (interval) where the electrode is not formed, and the amount of solder disposed in a region where the electrode is not formed can be extremely small. In the present invention, the solder not located between the opposing electrodes can be efficiently moved to between the opposite electrodes. Therefore, the conduction reliability between the electrodes can be improved. Moreover, the electrical connection between the electrodes adjacent to each other that are not connected can be prevented, and the insulation reliability can be improved. In order to more efficiently dispose the solder on the electrode, the above conductive material is preferably liquid at 25 ° C, and is preferably a conductive paste. In order to efficiently dispose the solder on the electrode, the viscosity (ηmp) of the conductive material at the melting point of the solder in the conductive particles is 0.1 Pa·s or more and 20 Pa·s or less. The viscosity (ηmp) is preferably 1 Pa·s or more, and preferably 15 Pa·s or less, and more preferably 10 Pa·s or less, from the viewpoint of more effectively disposing the solder on the electrode. When the viscosity (ηmp) is not less than the above lower limit and not more than the above upper limit, the conductive particles or the solder are efficiently moved from the initial stage to the middle stage during the conductive connection. The viscosity can be STRESSTECH (manufactured by EOLOGICA Co., Ltd.) or the like, and the strain control is 1 rad, the frequency is 1 Hz, the temperature rise rate is 20 ° C / min, and the measurement temperature range is 40 to 200 ° C (wherein the melting point of the solder exceeds 200 ° C, The measurement was carried out under the conditions that the upper limit of the temperature was set to the melting point of the solder. The melting point of the above solder may be 200 ° C or less. The above conductive material may be used in the form of a conductive paste, a conductive film or the like. The above conductive material is preferably an anisotropic conductive material. The above conductive paste is preferably an anisotropic conductive paste. The above conductive film is preferably an anisotropic conductive film. The above conductive material can be preferably used for electrical connection of electrodes. The above conductive material is preferably a circuit connecting material. The molecular weight of the compound having an iso-cyanuric acid skeleton is preferably 200 or more, more preferably 300 or more, and is preferably 1,000 or less, more preferably 600 or less, from the viewpoint of further suppressing generation of black soot. In view of further suppressing the generation of black soot, the content of the compound having an iso-cyanuric acid skeleton in 100% by weight of the conductive material is preferably 5% by weight or more, more preferably 10% by weight or more, and more preferably It is preferably 30% by weight or less, more preferably 20% by weight or less. Hereinafter, each component contained in the above-mentioned conductive material will be described. (Electroconductive Particles) The conductive particles electrically connect the electrodes of the connection member. The conductive particles have solder on the outer surface portion of the conductive portion. The conductive particles may be solder particles. The above solder particles are formed of solder. The solder particles have solder on the outer surface portion of the conductive portion. The solder particles are the central portion of the solder particles and the outer surface portion of the conductive portion are particles of solder. Regarding the above solder particles, the central portion and the outer surface portion of the conductive portion are formed of solder. The conductive particles may have substrate particles and a conductive portion disposed on a surface of the substrate particles. In this case, the conductive particles have solder on the outer surface portion of the conductive portion. In addition, when using the conductive particles including the substrate particles not formed of solder and the solder portion disposed on the surface of the substrate particles, the conductive particles become difficult to use. Since the conductive particles are deposited on the electrode and the conductive particles have a low solder joint property, the conductive particles that have moved to the electrode tend to move outside the electrode, and the effect of suppressing the displacement between the electrodes tends to be lowered. Therefore, the above conductive particles are preferably solder particles. From the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of voids, it is preferred that a carboxyl group or an amine group be present on the outer surface (the outer surface of the solder) of the conductive particles, preferably present. A carboxyl group is preferably an amine group. It is preferred that a carboxyl group or an amine group is covalently bonded to the outer surface (the outer surface of the solder) of the above-mentioned conductive particles via a Si—O bond, an ether bond, an ester bond or a group represented by the following formula (X). More preferably, it is preferably a group having a carboxyl group or an amine group covalently bonded to the outer surface of the conductive particle (the outer surface of the solder) via an ether bond, an ester bond or a group represented by the following formula (X). . The group containing a carboxyl group or an amine group may contain both a carboxyl group and an amine group. Further, in the following formula (X), the right end portion and the left end portion indicate a bonding portion. [Chemical 1]A hydroxyl group is present on the surface of the solder. By covalently bonding the hydroxyl group to a carboxyl group-containing group, a bond stronger than that by other coordinate bonds (chelating coordination) or the like can be formed, so that it is possible to reduce the interelectrode. Conductive particles that connect the resistors and suppress the generation of voids. In the above conductive particles, the bonding form of the surface of the solder and the group containing a carboxyl group may not contain a coordinate bond, or may not contain a bond formed by chelating coordination. The conductive particles are preferably a compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group or an amine group from the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of voids (hereinafter, It is sometimes referred to as compound X), and a hydroxyl group on the surface of the solder is obtained by reacting the above-mentioned functional group capable of reacting with a hydroxyl group. A covalent bond is formed in the above reaction. Conductive particles having a carboxyl group or an amine group covalently bonded to the surface of the solder can be easily obtained by reacting a hydroxyl group on the surface of the solder with a functional group capable of reacting with a hydroxyl group in the above compound. Conductive particles having a carboxyl group or an amine group covalently bonded to the surface of the solder via an ether bond or an ester bond are obtained. By reacting the hydroxyl group on the surface of the solder with the functional group capable of reacting with the hydroxyl group, the compound X can be chemically bonded to the surface of the solder in the form of a covalent bond. Examples of the functional group capable of reacting with a hydroxyl group include a hydroxyl group, a carboxyl group, an ester group, a carbonyl group and the like. It is preferably a hydroxyl group or a carboxyl group. The functional group capable of reacting with a hydroxyl group may be a hydroxyl group or a carboxyl group. Examples of the compound having a functional group reactive with a hydroxyl group include acetopropionic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-ketohexanoic acid, and 3 -hydroxypropionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4- Phenylbutyric acid, citric acid, dodecanoic acid, myristic acid, pentadecanoic acid, palmitic acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, oil Acid, linoleic acid, (9,12,15)-linolenic acid, nonadecanoic acid, arachidic acid, sebacic acid and dodecanedioic acid. Preferred is glutaric acid or glycolic acid. The above-mentioned compound having a functional group capable of reacting with a hydroxyl group may be used alone or in combination of two or more. The compound having a functional group reactive with a hydroxyl group is preferably a compound having at least one carboxyl group. The above compound X preferably has a fluxing action, and the above compound X preferably has a fluxing action in a state of being bonded to the surface of the solder. The compound having a fluxing action can remove the oxide film on the surface of the solder and the oxide film on the surface of the electrode. The carboxyl group has a fluxing effect. Examples of the compound having a fluxing action include acetopropionic acid, glutaric acid, glycolic acid, succinic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4-aminobutyric acid, and 3-mercaptopropionic acid. , 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-phenylbutyric acid, and the like. Preferred is glutaric acid or glycolic acid. The above-mentioned compound having a fluxing action may be used alone or in combination of two or more. From the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of voids, it is preferred that the functional group capable of reacting with a hydroxyl group in the above compound X is a hydroxyl group or a carboxyl group. The functional group capable of reacting with a hydroxyl group in the above compound X may be a hydroxyl group or a carboxyl group. When the functional group capable of reacting with a hydroxyl group is a carboxyl group, the compound X preferably has at least two carboxyl groups. Conductive particles in which a carboxyl group-containing group is covalently bonded to the surface of the solder can be obtained by reacting a partial carboxyl group of a compound having at least two carboxyl groups with a hydroxyl group on the surface of the solder. The method for producing the conductive particles includes, for example, a method of mixing conductive particles, a compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group, a catalyst, and a solvent using conductive particles. In the method for producing the conductive particles described above, the conductive particles having a carboxyl group-containing group covalently bonded to the surface of the solder can be easily obtained by the mixing step. Further, in the method for producing the conductive particles, it is preferred to use conductive particles, and to mix the conductive particles, the compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group, the catalyst, and the solvent, and Heat up. Conductive particles having a carboxyl group-containing group covalently bonded to the surface of the solder can be more easily obtained by the mixing and heating steps. Examples of the solvent include alcohol solvents such as methanol, ethanol, propanol and butanol; acetone, methyl ethyl ketone, ethyl acetate, toluene, and xylene. The above solvent is preferably an organic solvent, more preferably toluene. These solvents may be used alone or in combination of two or more. Examples of the catalyst include p-toluenesulfonic acid, benzenesulfonic acid, and 10-camphorsulfonic acid. The above catalyst is preferably p-toluenesulfonic acid. The above catalysts may be used alone or in combination of two or more. It is preferred to carry out heating at the time of the above mixing. The heating temperature is preferably 90 ° C or higher, more preferably 100 ° C or higher, and is preferably 130 ° C or lower, more preferably 110 ° C or lower. The conductive particles are preferably obtained by the following steps from the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of voids: using an isocyanate compound to carry out the hydroxyl group on the surface of the solder with the above isocyanate compound reaction. A covalent bond is formed in the above reaction. Conductive particles in which a nitrogen atom derived from an isocyanate group is covalently bonded to the surface of the solder can be easily obtained by reacting a hydroxyl group on the surface of the solder with the above isocyanate compound. By reacting the hydroxyl group on the surface of the solder with the isocyanate compound, the isocyanate group-derived group can be chemically bonded to the surface of the solder in the form of a covalent bond. Further, the isocyanate group-derived group and the decane coupling agent can be easily reacted. Since the above conductive particles can be easily obtained, the carboxyl group-containing group is preferably introduced by a reaction using a decane coupling agent having a carboxyl group, or by a reaction using a decane coupling agent. The group of the mixture is introduced by reacting with a compound having at least one carboxyl group. The conductive particles are preferably obtained by reacting a hydroxyl group on the surface of the solder with the isocyanate compound and reacting with a compound having at least one carboxyl group by using the above isocyanate compound. From the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of voids, it is preferred that the compound having at least one carboxyl group has a plurality of carboxyl groups. Examples of the isocyanate compound include diphenylmethane-4,4'-diisocyanate (MDI), hexamethylene diisocyanate (HDI), toluene diisocyanate (TDI), and isophorone diisocyanate (IPDI). Isocyanate compounds other than these may also be used. After reacting the compound with the surface of the solder, the residual isocyanate group is reacted with a compound having a carboxyl group reactive with the residual isocyanate group, whereby the carboxyl group can be introduced to the group represented by the above formula (X). The surface of the solder. As the above isocyanate compound, a compound having an unsaturated double bond and having an isocyanate group can also be used. For example, 2-propenyloxyethyl isocyanate and 2-isocyanate ethyl methacrylate are mentioned. By reacting the isocyanate group of the compound with the surface of the solder, and reacting with a compound having a functional group reactive with the remaining unsaturated double bond and having a carboxyl group, the group represented by the above formula (X) can be used. The carboxyl group is introduced to the surface of the solder. Examples of the above decane coupling agent include 3-isocyanatopropyltriethoxysilane ("KBE-9007" manufactured by Shin-Etsu Silicones Co., Ltd.), and 3-isocyanatopropyltrimethoxydecane ( "Y-5187" manufactured by MOMENTIVE Co., Ltd., etc. The above decane coupling agents may be used alone or in combination of two or more. Examples of the compound having at least one carboxyl group include acetopropionic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-ketohexanoic acid, and 3-hydroxyl group. Propionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-phenyl Butyric acid, citric acid, dodecanoic acid, myristic acid, pentadecanoic acid, palmitic acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, isooleic acid, Linseed acid, (9,12,15)-linolenic acid, nonadecanoic acid, arachidic acid, azelaic acid and dodecanedioic acid. Preferred is glutaric acid, adipic acid or glycolic acid. The compound having at least one carboxyl group may be used alone or in combination of two or more. By using the above isocyanate compound, a hydroxyl group on the surface of the solder is reacted with the above isocyanate compound, and a part of the carboxyl group of a compound having a plurality of carboxyl groups is reacted with a hydroxyl group on the surface of the solder, whereby a carboxyl group-containing group remains. In the method for producing the above-mentioned conductive particles, an electroconductive particle is used, and an isocyanate compound is used to react a hydroxyl group on the surface of the solder with the isocyanate compound, and then reacted with a compound having at least one carboxyl group to obtain a formula (X). The conductive particles of the carboxyl group-containing group are bonded to the surface of the solder. In the method for producing the above-mentioned conductive particles, the conductive particles in which the carboxyl group-containing group is introduced on the surface of the solder can be easily obtained by the above steps. As a specific manufacturing method of the said electroconductive particle, the following methods are mentioned. The conductive particles are dispersed in an organic solvent, and a decane coupling agent having an isocyanate group is added. Thereafter, a reaction catalyst of a hydroxyl group and an isocyanate group on the surface of the solder of the conductive particles is used to covalently bond the decane coupling agent to the surface of the solder. Then, a hydroxyl group is formed by hydrolyzing an alkoxy group bonded to a ruthenium atom of a decane coupling agent. The resulting hydroxyl group is reacted with a carboxyl group of a compound having at least one carboxyl group. Moreover, as a specific manufacturing method of the said electroconductive particle, the following methods are mentioned. The conductive particles are dispersed in an organic solvent, and a compound having an isocyanate group and an unsaturated double bond is added. Thereafter, a reaction catalyst of a hydroxyl group on the surface of the solder of the conductive particles and an isocyanate group is used to form a covalent bond. Thereafter, an unsaturated double bond and a compound having a carboxyl group are allowed to react with the introduced unsaturated double bond. Examples of the reaction catalyst for the hydroxyl group and the isocyanate group on the surface of the solder of the conductive particles include a tin-based catalyst (dibutyltin dilaurate), an amine-based catalyst (such as triethylenediamine), and a carboxylate catalyst. (lead naphthenate, potassium acetate, etc.), and a trialkylphosphine catalyst (such as triethylphosphine). The compound having at least one carboxyl group is preferably a compound represented by the following formula (1) from the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of pores. The compound represented by the following formula (1) has a fluxing action. Further, the compound represented by the following formula (1) has a fluxing action in a state of being introduced into the surface of the solder. [Chemical 2]In the above formula (1), X represents a functional group reactive with a hydroxyl group, and R represents a divalent organic group having 1 to 5 carbon atoms. The organic group may contain a carbon atom, a hydrogen atom, and an oxygen atom. The organic group may be a divalent hydrocarbon group having 1 to 5 carbon atoms. The main chain of the above organic group is preferably a divalent hydrocarbon group. In the organic group, a carboxyl group or a hydroxyl group may be bonded to the divalent hydrocarbon group. The compound represented by the above formula (1) contains, for example, citric acid. The compound having at least one carboxyl group is preferably a compound represented by the following formula (1A) or the following formula (1B). The compound having at least one carboxyl group is preferably a compound represented by the following formula (1A), and more preferably a compound represented by the following formula (1B). [Chemical 3]In the above formula (1A), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (1A) is the same as R in the above formula (1). [Chemical 4]In the above formula (1B), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (1B) is the same as R in the above formula (1). Preferably, the surface represented by the following formula (2A) or the following formula (2B) is bonded to the surface of the solder. It is preferable that the surface represented by the following formula (2A) is bonded to the surface of the solder, and it is more preferable to bond the group represented by the following formula (2B). In the following formula (2A) and the following formula (2B), the left end portion indicates a bonding portion. [Chemical 5]In the above formula (2A), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (2A) is the same as R in the above formula (1). [Chemical 6]In the above formula (2B), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (2B) is the same as R in the above formula (1). The molecular weight of the compound having at least one carboxyl group is preferably 10,000 or less, more preferably 1,000 or less, still more preferably 500 or less from the viewpoint of improving the wettability of the solder surface. In the case where the compound having at least one carboxyl group is not a polymer and the structural formula in which the compound having at least one carboxyl group is specified, the molecular weight means a molecular weight which can be calculated from the structural formula. Further, in the case where the compound having at least one carboxyl group is a polymer, it means a weight average molecular weight. The conductive particles are preferably an electroconductive particle main body and an anionic polymer disposed on the surface of the electroconductive particle main body in terms of effectively improving the aggregability of the conductive particles during the conductive connection. The conductive particles are preferably obtained by subjecting the conductive particles to a surface treatment by using an anionic polymer or a compound which is an anionic polymer. The conductive particles are preferably surface treated by an anionic polymer or a compound which is an anionic polymer. The above-mentioned anionic polymer and the above-mentioned compound which becomes an anionic polymer may be used alone or in combination of two or more. The above anionic polymer is a polymer having an acidic group. The method of surface-treating the main body of the electroconductive particle by an anionic polymer is a method of using, for example, a (meth)acrylic polymer obtained by copolymerizing (meth)acrylic acid as an anionic polymer, a polyester polymer synthesized from a dicarboxylic acid and a diol and having a carboxyl group at both terminals, a polymer obtained by intermolecular dehydration condensation reaction of a dicarboxylic acid and having a carboxyl group at both terminals, synthesized from a dicarboxylic acid and a diamine A polyester polymer having a carboxyl group at both ends and a modified polyvinyl alcohol having a carboxyl group ("Gohsenx T" manufactured by Nippon Synthetic Chemical Co., Ltd.) and the like, and reacting a carboxyl group of the anionic polymer with a hydroxyl group on the surface of the conductive particle body. The anion portion of the anionic polymer may, for example, be the above-mentioned carboxyl group, and other examples thereof include toluenesulfonyl group (p-H).3 CC6 H4 S(=O)2 -), sulfonate ion group (-SO3 - ), and phosphate ion base (-PO4 - )Wait. Moreover, as another method of surface treatment, a method of using a functional group having a functional group reactive with a hydroxyl group on the surface of the conductive particle and further having a functional group polymerizable by addition or condensation reaction is used. The compound is polymerized on the surface of the conductive particle body. Examples of the functional group that reacts with the hydroxyl group on the surface of the conductive particle body include a carboxyl group and an isocyanate group. Examples of the functional group to be polymerized by addition or condensation reaction include a hydroxyl group, a carboxyl group, an amine group, and (A). Base) propylene fluorenyl. The weight average molecular weight of the above anionic polymer is preferably 2,000 or more, more preferably 3,000 or more, and is preferably 10,000 or less, more preferably 8,000 or less. When the weight average molecular weight is not less than the above lower limit and not more than the above upper limit, a sufficient amount of charge and solderability can be introduced into the surface of the conductive particles. Thereby, the aggregation property of the electroconductive particle can be effectively improved at the time of electrically conductive connection, and the oxide film of the electrode surface can be effectively removed at the time of connection of the connection target member. When the weight average molecular weight is not less than the above lower limit and not more than the above upper limit, the anionic polymer is easily disposed on the surface of the conductive particle body, and the aggregation of the solder particles can be effectively improved during the conductive connection, and the conductive particles can be further improved. Efficiently placed on the electrode. The above weight average molecular weight means a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC). The weight average molecular weight of the anionic polymer can be obtained by dissolving the solder in the conductive particles, removing the conductive particles by dilute hydrochloric acid or the like which does not cause decomposition of the anionic polymer, and measuring the weight average molecular weight of the remaining anionic polymer. . The amount of introduction of the anionic polymer to the surface of the conductive particles is preferably 1 mgKOH or more per 1 g of the conductive particles, more preferably 2 mgKOH or more, and is preferably 10 mgKOH or less, more preferably 6 mgKOH. the following. The above acid value can be measured by the following method. 1 g of the conductive particles were added to 36 g of acetone, and they were dispersed by ultrasonic waves for 1 minute. Thereafter, phenolphthalein was used as an indicator, and titration was carried out using a 0.1 mol/L potassium hydroxide ethanol solution. Next, a specific example of the conductive particles will be described with reference to the drawings. Fig. 4 is a cross-sectional view showing a first example of conductive particles which can be used for a conductive material. The conductive particles 21 shown in Fig. 4 are solder particles. The conductive particles 21 are entirely formed of solder. The conductive particles 21 do not have substrate particles in the core, and are not core-shell particles. The central portion of the conductive particles 21 and the outer surface portion of the conductive portion are all formed of solder. Fig. 5 is a cross-sectional view showing a second example of conductive particles which can be used for a conductive material. The conductive particles 31 shown in FIG. 5 include substrate particles 32 and a conductive portion 33 disposed on the surface of the substrate particles 32. The conductive portion 33 covers the surface of the substrate particles 32. The conductive particles 31 are coated particles in which the surface of the substrate particles 32 is covered with the conductive portion 33. The conductive portion 33 has a second conductive portion 33A and a solder portion 33B (first conductive portion). The conductive particles 31 include a second conductive portion 33A between the substrate particles 32 and the solder portion 33B. Therefore, the conductive particles 31 include the substrate particles 32, the second conductive portion 33A disposed on the surface of the substrate particles 32, and the solder portion 33B disposed on the outer surface of the second conductive portion 33A. Fig. 6 is a cross-sectional view showing a third example of conductive particles which can be used for a conductive material. As described above, the conductive portion 33 in the conductive particles 31 has a two-layer structure. The conductive particles 41 shown in FIG. 6 have a solder portion 42 as a single-layer conductive portion. The conductive particles 41 include the substrate particles 32 and the solder portion 42 disposed on the surface of the substrate particles 32. Examples of the substrate particles include resin particles, inorganic particles other than metal particles, organic-inorganic hybrid particles, and metal particles. The substrate particles are preferably substrate particles other than metal, and are preferably resin particles, inorganic particles other than metal particles, or organic-inorganic hybrid particles. The substrate particles may be copper particles. The substrate particles may have a core and a shell disposed on a surface of the core, and may be core-shell particles. The above-mentioned core may be an organic core, and the above shell may be an inorganic shell. As the resin for forming the above resin particles, various organic materials can be preferably used. Examples of the resin for forming the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; and polymethacrylic acid; Acrylic resin such as methyl ester and polymethyl acrylate; polycarbonate, polyamide, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanidine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin, benzoguanamine resin, Urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyethylene terephthalate, polyfluorene, polyphenylene ether, polyacetal, polyimide, polyamidimide, Polyetheretherketone, polyether oxime, divinylbenzene polymer, and divinylbenzene copolymer. Examples of the divinylbenzene-based copolymer and the like include a divinylbenzene-styrene copolymer and a divinylbenzene-(meth)acrylate copolymer. Since the hardness of the resin particles can be easily controlled within a preferred range, the resin for forming the resin particles preferably polymerizes one or two or more kinds of polymerizable monomers having an ethylenically unsaturated group. The polymer. When the polymerizable monomer having an ethylenically unsaturated group is polymerized to obtain the above resin particles, examples of the polymerizable monomer having an ethylenically unsaturated group include a non-crosslinkable monomer and cross-linking. Sexual monomer. Examples of the non-crosslinkable monomer include a styrene monomer such as styrene or α-methylstyrene, and a carboxyl group such as (meth)acrylic acid, maleic acid or maleic anhydride. Monomer; methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (a) Base) lauryl acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, (meth) acrylateAlkyl (meth) acrylate compound such as ester; 2-hydroxyethyl (meth) acrylate, glyceryl (meth) acrylate, polyoxyethylene (meth) acrylate, glycidyl (meth) acrylate, etc. (meth) acrylate compound containing oxygen atom; nitrile containing monomer such as (meth) acrylonitrile; vinyl ether compound such as methyl vinyl ether, ethyl vinyl ether or propyl vinyl ether; vinyl acetate, ethylene butyrate Acidic vinyl ester compounds such as ester, vinyl laurate, vinyl stearate; unsaturated hydrocarbons such as ethylene, propylene, isoprene, butadiene; trifluoromethyl (meth)acrylate, (meth)acrylic acid A halogen-containing monomer such as pentafluoroethyl ester, vinyl chloride, vinyl fluoride or chlorostyrene. Examples of the crosslinkable monomer include tetramethylol methane tetra(meth)acrylate, tetramethylol methane tri(meth)acrylate, and tetramethylolmethane di(meth)acrylate. Ester, trimethylolpropane tri(meth)acrylate, dipentaerythritol hexa(meth) acrylate, dipentaerythritol penta (meth) acrylate, tris(meth) acrylate, di(meth)acrylic acid Glyceride, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, (poly)tetramethylene glycol di(meth)acrylate, 1,4- A polyfunctional (meth) acrylate compound such as butanediol di(meth) acrylate; triallyl (iso) cyanurate, triallyl trimellitate, divinyl benzene, phthalic acid Allyl ester, diallyl acrylamide, diallyl ether; and γ-(meth) propylene methoxy propyl trimethoxy decane, trimethoxy decyl styrene, vinyl trimethoxy decane Such as decane-containing monomers and the like. The above resin particles can be obtained by polymerizing the above polymerizable monomer having an ethylenically unsaturated group by a known method. Examples of the method include a method in which suspension polymerization is carried out in the presence of a radical polymerization initiator, and a method in which a non-crosslinked seed particle and a radical polymerization initiator are used to swell the monomer to carry out polymerization. . In the case where the substrate particles are inorganic particles or organic-inorganic hybrid particles other than metal, examples of the inorganic material for forming the substrate particles include ceria, alumina, barium titanate, zirconia, and carbon black. Wait. The above inorganic substance is preferably not a metal. The particle formed of the cerium oxide is not particularly limited, and for example, a hydrazine compound having two or more hydrolyzable alkoxyalkylalkyl groups is hydrolyzed to form crosslinked polymer particles, and then, if necessary, Particles obtained by calcination. Examples of the organic-inorganic hybrid particles include organic-inorganic hybrid particles formed of a crosslinked alkoxyfluorene alkyl polymer and an acrylic resin. In the case where the substrate particles are metal particles, examples of the metal for forming the metal particles include silver, copper, nickel, rhodium, gold, and titanium. In the case where the substrate particles are metal particles, the metal particles are preferably copper particles. Preferably, however, the substrate particles are not metal particles. The particle diameter of the substrate particles is preferably 0.1 μm or more, more preferably 1 μm or more, further preferably 1.5 μm or more, particularly preferably 2 μm or more, and preferably 100 μm or less, more preferably 50 μm or less. Further, it is preferably 40 μm or less, more preferably 20 μm or less, still more preferably 10 μm or less, still more preferably 5 μm or less, and most preferably 3 μm or less. When the particle diameter of the substrate particles is at least the above lower limit, the contact area between the conductive particles and the electrode is increased, so that the conduction reliability between the electrodes can be further improved, and the electrode connected between the conductive particles can be further reduced. Connect the resistor. When the particle diameter of the substrate particles is not more than the above upper limit, the conductive particles are easily sufficiently compressed, and the connection resistance between the electrodes can be further reduced, and the interval between the electrodes can be further reduced. The particle diameter of the substrate particles indicates a diameter when the substrate particles are in a true spherical shape, and indicates a maximum diameter when the substrate particles are not in a true spherical shape. The particle diameter of the substrate particles is particularly preferably 2 μm or more and 5 μm or less. When the particle diameter of the substrate particles is in the range of 2 μm or more and 5 μm or less, the interval between the electrodes can be further reduced, and even if the thickness of the conductive portion is made thick, a small amount of conductive particles can be obtained. A method of forming a conductive portion on the surface of the substrate particle, and a method of forming a solder portion on the surface of the substrate particle or the surface of the second conductive portion are not particularly limited. Examples of the method of forming the conductive portion and the solder portion include a method using electroless plating, a method using electroplating, a method using physical collision, a method using mechanochemical reaction, and a method using physical vapor deposition or physical adsorption. And a method of applying a paste containing a metal powder or a metal powder and a binder to the surface of the substrate particles. It is preferred to use a method of electroless plating, electroplating or physical collision. Examples of the method using physical vapor deposition include vacuum deposition, ion plating, and ion sputtering. Further, in the above method of utilizing physical collision, for example, Thetacomposer (manufactured by Deshou Works Co., Ltd.) or the like is used. The melting point of the substrate particles is preferably higher than the melting points of the conductive portion and the solder portion. The melting point of the substrate particles is preferably more than 160 ° C, more preferably more than 300 ° C, still more preferably more than 400 ° C, and even more preferably more than 450 ° C. Further, the melting point of the substrate particles may be less than 400 °C. The base material particles may have a melting point of 160 ° C or lower. The softening point of the substrate particles is preferably 260 ° C or higher. The softening point of the above substrate particles may also be less than 260 °C. The conductive particles may have a single layer solder portion. The conductive particles may have a plurality of conductive portions (solder portions, second conductive portions). In other words, in the conductive particles, two or more conductive portions may be laminated. When the conductive portion is two or more layers, the conductive particles preferably have solder on the outer surface portion of the conductive portion. The above solder is preferably a metal having a melting point of 450 ° C or less (low melting point metal). The solder portion is preferably a metal layer (low melting point metal layer) having a melting point of 450 ° C or lower. The low melting point metal layer is a layer containing a low melting point metal. The solder in the conductive particles is preferably a metal particle (low melting point metal particle) having a melting point of 450 ° C or lower. The low melting point metal particles are particles containing a low melting point metal. The so-called low melting point metal means a metal having a melting point of 450 ° C or lower. The melting point of the low melting point metal is preferably 300 ° C or lower, more preferably 160 ° C or lower. Further, the solder in the conductive particles preferably contains tin. In 100% by weight of the metal contained in the solder portion and 100% by weight of the metal contained in the solder in the conductive particles, the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, and further preferably It is 70% by weight or more, and particularly preferably 90% by weight or more. When the content of tin contained in the solder in the conductive particles is at least the above lower limit, the conduction reliability of the conductive particles and the electrode is further improved. In addition, the high-frequency inductively coupled plasma emission spectrometer ("ICP-AES" manufactured by Horiba, Ltd.) or the fluorescent X-ray analyzer (EDX-800HS manufactured by Shimadzu Corporation) can be used. ), etc. are measured. By using the conductive particles having solder on the outer surface portion of the conductive portion, the solder is melted and bonded to the electrode, and the solder conducts the electrodes. For example, since the solder is easily in surface contact with the electrode instead of point contact, the connection resistance becomes low. Further, by using conductive particles having solder on the outer surface portion of the conductive portion, the bonding strength between the solder and the electrode is increased, and as a result, peeling of the solder and the electrode is more difficult to occur, and the conduction reliability is effectively improved. The low melting point metal constituting the solder portion and the solder particles is not particularly limited. The low melting point metal is preferably tin or an alloy containing tin. Examples of the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy. The low melting point metal is preferably tin, tin-silver alloy, tin-silver-copper alloy, tin-bismuth alloy, or tin-indium alloy in terms of excellent wettability of the electrode. More preferably, it is a tin-bismuth alloy or a tin-indium alloy. The material constituting the solder (solder portion) is preferably a filler material having a liquidus of 450 ° C or less, based on JIS Z3001: welding term. Examples of the composition of the solder include a metal composition containing zinc, gold, silver, lead, copper, tin, antimony, indium, or the like. A tin-indium system (117 ° C eutectic) or a tin-lanthanide (139 ° C eutectic) having a low melting point and no lead is preferable. That is, the solder is preferably free from lead, and is preferably a solder containing tin and indium or a solder containing tin and antimony. In order to further improve the bonding strength between the solder and the electrode, the solder in the conductive particles may also contain nickel, copper, lanthanum, aluminum, zinc, iron, gold, titanium, phosphorus, lanthanum, cerium, cobalt, lanthanum, manganese, chromium. , molybdenum, palladium and other metals. Further, from the viewpoint of further improving the bonding strength between the solder and the electrode, the solder in the conductive particles preferably contains nickel, copper, ruthenium, aluminum or zinc. From the viewpoint of further increasing the bonding strength between the solder and the electrode in the solder portion or the conductive particles, it is preferable that the content of the metal for improving the bonding strength is 100% by weight of the solder in the conductive particles. 0.0001% by weight or more, and preferably 1% by weight or less. The melting point of the second conductive portion is preferably higher than the melting point of the solder portion. The melting point of the second conductive portion is preferably more than 160 ° C, more preferably more than 300 ° C, still more preferably more than 400 ° C, more preferably more than 450 ° C, more preferably more than 500 ° C, and most preferably more than 600 ° C . The solder portion is melted at the time of conductive connection because of a low melting point. Preferably, the second conductive portion does not melt when electrically connected. The conductive particles are preferably used by melting solder, and it is preferable to use the solder portion by melting. It is preferable to use the solder portion while melting the second conductive portion without melting the solder portion. When the melting point of the second conductive portion is higher than the melting point of the solder portion, the solder portion can be melted without melting the second conductive portion during the conductive connection. The absolute value of the difference between the melting point of the solder portion and the melting point of the second conductive portion exceeds 0 ° C, preferably 5 ° C or higher, more preferably 10 ° C or higher, further preferably 30 ° C or higher, and particularly preferably 50 ° C or higher. The best is above 100 °C. The second conductive portion preferably contains a metal. The metal constituting the second conductive portion is not particularly limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, ruthenium, osmium, iridium, and cadmium, and the like. Further, as the above metal, tin-doped indium oxide (ITO) can be used. The above metals may be used alone or in combination of two or more. The second conductive portion is preferably a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably a nickel layer or a gold layer, and further preferably a copper layer. The conductive particles preferably have a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably have a nickel layer or a gold layer, and further preferably have a copper layer. By using the conductive particles having the preferred conductive portions for the connection between the electrodes, the connection resistance between the electrodes is further lowered. Further, the solder portion can be formed more easily on the surface of the preferred conductive portions. The thickness of the solder portion is preferably 0.005 μm or more, more preferably 0.01 μm or more, and is preferably 10 μm or less, more preferably 1 μm or less, still more preferably 0.3 μm or less. When the thickness of the solder portion is not less than the above lower limit and not more than the above upper limit, sufficient conductivity can be obtained, and the conductive particles are not excessively hard, and the conductive particles are sufficiently deformed at the time of connection between the electrodes. The average particle diameter of the conductive particles is preferably 0.5 μm or more, more preferably 1 μm or more, still more preferably 3 μm or more, and is preferably 100 μm or less, more preferably 50 μm or less, and still more preferably 40. Below μm, it is preferably 30 μm or less. When the average particle diameter of the conductive particles is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently disposed on the electrode, and the solder in the conductive particles can be easily disposed between the electrodes. The conduction reliability is further improved. The "average particle diameter" of the above conductive particles means a number average particle diameter. The average particle diameter of the conductive particles can be determined, for example, by observing an arbitrary 50 conductive particles by an electron microscope or an optical microscope and calculating an average value. The shape of the conductive particles is not particularly limited. The shape of the conductive particles may be spherical or may be a shape other than a spherical shape such as a flat shape. The content of the conductive particles in 100% by weight of the conductive material is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, and particularly preferably 20% by weight or more. 30% by weight or more, and preferably 80% by weight or less, more preferably 60% by weight or less, still more preferably 50% by weight or less. When the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently disposed on the electrode, and the solder in the conductive particles can be easily disposed between the electrodes, and the reliability is improved. Further improve. From the viewpoint of further improving the conduction reliability, the content of the above conductive particles is preferably large. (thermosetting compound) The above thermosetting compound is a compound which can be hardened by heating. Examples of the thermosetting compound include an oxetane compound, an epoxy compound, an episulfide compound, a (meth)acrylic compound, a phenol compound, an amine compound, an unsaturated polyester compound, and a polyaminocarboxylic acid. An ester compound, a polyoxymethylene compound, a polyimine compound, or the like. From the viewpoint of further improving the curing property and viscosity of the conductive material and further improving the connection reliability, an epoxy compound or an episulfide compound is preferred, and an epoxy compound is more preferred. The above conductive material preferably contains an epoxy compound. These thermosetting compounds may be used alone or in combination of two or more. An aromatic epoxy compound is mentioned as said epoxy compound. A crystalline epoxy compound such as a resorcinol type epoxy compound, a naphthalene type epoxy compound, a biphenyl type epoxy compound, and a benzophenone type epoxy compound is preferable. It is preferably an epoxy compound which is solid at normal temperature (23 ° C) and has a melting temperature below the melting point of the solder. The melting temperature is preferably 100 ° C or lower, more preferably 80 ° C or lower, and is preferably 40 ° C or higher. By using the above-mentioned preferred epoxy compound, the viscosity is high at the stage of bonding the member to be joined, and when the acceleration is applied by the impact of the conveyance or the like, the first connection member and the second connection member can be suppressed. The misalignment and the viscosity of the conductive material can be greatly reduced by the heat during hardening, so that the agglomeration of the solder can be efficiently performed. In view of suppressing the generation of black soot, the conductive material preferably contains a thermosetting compound having a hetero-cyanuric acid skeleton as the thermosetting component and the thermosetting compound. The thermosetting compound having an isomeric cyanuric acid skeleton preferably has an epoxy group or an episulfide group, and preferably has a different viewpoint from the viewpoint of improving the hardenability of the conductive material and improving the connection reliability. An epoxy compound of a cyanuric acid skeleton or an episulfide compound having a hetero-cyanuric acid skeleton. It is especially preferred to be an epoxy compound having a hetero-cyanuric acid skeleton. The above conductive material may also contain a thermosetting compound which does not have a hetero-cyanuric acid skeleton. Examples of the thermosetting compound having an isomeric cyanuric acid skeleton include threeExamples of the triglycidyl ether include the TEPIC series (TEPIC-G, TEPIC-S, TEPIC-SS, TEPIC-HP, TEPIC-L, TEPIC-PAS, TEPIC-VL, TEPIC-UC) manufactured by Nissan Chemical Industries, Ltd., etc. . The above episulfide compound having an isomeric cyanuric acid skeleton can be obtained, for example, by converting an epoxy group of an epoxy compound having an isomeric cyanuric acid skeleton into an ethylenethio group. This method of transformation is well known. The molecular weight of the thermosetting compound having an isomeric cyanuric acid skeleton is preferably 200 or more, more preferably 300 or more, and is preferably 1,000 or less, more preferably 600, from the viewpoint of further suppressing the generation of black soot. the following. From the viewpoint of improving the hardenability of the conductive material and improving the connection reliability, the conductive material preferably contains the above-mentioned thermosetting compound having a hetero-cyanuric acid skeleton and contains a thermosetting having no hetero-cyanuric acid skeleton. The compound is the thermosetting component and the thermosetting compound. The thermosetting compound having no isomeric cyanuric acid skeleton preferably has an aromatic skeleton or an alicyclic skeleton from the viewpoint of improving the hardenability of the conductive material and the heat resistance of the cured product and improving the connection reliability. A thermosetting compound which does not have an iso-cyanuric skeleton and has an aromatic skeleton or an alicyclic skeleton is preferred. The content of the entire thermosetting compound in 100% by weight of the conductive material is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight or less. More preferably, it is 98% by weight or less, further preferably 90% by weight or less, and particularly preferably 80% by weight or less. When the content of the thermosetting compound is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently disposed on the electrode, and the displacement between the electrodes can be further suppressed, thereby further improving the conduction between the electrodes. Sex. From the viewpoint of further improving the impact resistance, it is preferred that the content of the above thermosetting compound is large. The content of the epoxy compound is preferably 10% by weight or more, and more preferably 15% by weight, based on 100% by weight of the conductive material, in order to further improve the curing property and the viscosity of the conductive material. The above is preferably 50% by weight or less, more preferably 30% by weight or less. In view of further suppressing the generation of black soot, the content of the thermosetting component having the iso-cyanuric acid skeleton is preferably 5% by weight or more, more preferably 10% by weight or more, based on 100% by weight of the conductive material. And it is preferably 30% by weight or less, more preferably 20% by weight or less. In view of further suppressing the generation of black soot, the content of the thermosetting compound having an isomeric cyanuric acid skeleton is preferably 5% by weight or more, more preferably 10% by weight or more, based on 100% by weight of the conductive material. And it is preferably 30% by weight or less, more preferably 20% by weight or less. The content of the thermosetting compound having no isomeric cyanuric acid skeleton is preferably 1% by weight or more, and more preferably 100% by weight of the conductive material, in terms of improving the curing property of the conductive material and improving the connection reliability. It is preferably 2% by weight or more, and preferably 20% by weight or less, more preferably 15% by weight or less. The weight ratio of the content of the compound having an iso-cyanuric acid skeleton to the content of the flux (the content of the compound having an iso-cyanuric acid skeleton/flux) from the viewpoint of further suppressing the generation of black soot The content is preferably 0.5 or more, more preferably 3 or more, and is preferably 20 or less, more preferably 15 or less, and may be 1 or less. In the case where the flux contains a flux having a hetero-cyanuric acid skeleton, the flux content also includes a flux having a hetero-cyanuric acid skeleton. From the viewpoint of further suppressing the generation of black soot, the weight ratio of the content of the thermosetting component having the iso-cyanuric acid skeleton to the content of the flux (the thermosetting component having a hetero-cyanuric acid skeleton) The content of the content/flux is preferably 0.5 or more, more preferably 3 or more, and is preferably 20 or less, more preferably 15 or less. The weight ratio of the content of the thermosetting compound having a hetero-cyanuric acid skeleton to the content of the flux (the thermosetting compound having a hetero-cyanuric acid skeleton) in terms of further suppressing the generation of black soot The content of the content/flux is preferably 0.5 or more, more preferably 3 or more, and is preferably 20 or less, more preferably 15 or less. The weight ratio of the content of the compound having an iso-cyanuric acid skeleton to the content of the above-mentioned conductive particles (the content of the compound having an iso-cyanuric acid skeleton/conductivity) from the viewpoint of further suppressing the generation of black soot The content of the particles is preferably 0.05 or more, more preferably 0.1 or more, and is preferably 0.5 or less, more preferably 0.4 or less. From the viewpoint of further suppressing the generation of black soot, the weight ratio of the content of the thermosetting component having the iso-cyanuric acid skeleton to the content of the conductive particles (the thermosetting property of the iso-cyanuric skeleton) The content of the component/the content of the conductive particles is preferably 0.05 or more, more preferably 0.1 or more, and is preferably 0.5 or less, more preferably 0.4 or less. The weight ratio of the content of the thermosetting compound having the iso-cyanuric acid skeleton to the content of the conductive particles (the thermosetting property having a hetero-cyanuric acid skeleton) from the viewpoint of further suppressing the generation of black soot The content of the compound / the content of the conductive particles is preferably 0.05 or more, more preferably 0.1 or more, and is preferably 0.5 or less, more preferably 0.4 or less. (Hot Curing Agent) The above-mentioned thermosetting agent thermally hardens the above-mentioned thermosetting compound. Examples of the thermosetting agent include an imidazole curing agent, a phenol curing agent, a thiol curing agent, an amine curing agent, an acid anhydride curing agent, a thermal cation initiator (thermal cation curing agent), and a thermal radical generating agent. These thermosetting agents may be used alone or in combination of two or more. From the viewpoint of further suppressing the generation of black soot, a thermal hardener or a thiol hardener having a hetero-cyanuric acid skeleton is preferred. From the viewpoint of further suppressing the generation of black soot, a thermosetting agent having an iso-cyanuric acid skeleton is preferred, and a mercaptan curing agent is preferred. The above conductive material may also contain a thermal hardener which does not have a hetero-cyanuric acid skeleton. The imidazole curing agent is not particularly limited, and examples thereof include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and trimellitic acid 1-cyanide. Ethyl-2-phenylimidazolium salt, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-all threeAnd 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-all threeAn isocyanuric acid addition product or the like. The thiol curing agent is not particularly limited, and examples thereof include trimethylolpropane tris(3-mercaptopropionate), pentaerythritol tetrakis(3-mercaptopropionate), and dipentaerythritol hexa(3-mercaptopropionic acid). Ester) and the like. The solubility parameter of the above thiol hardener is preferably 9.5 or more, and preferably 12 or less. The above solubility parameters are calculated by the Fedors method. For example, the solubility parameter of trimethylolpropane tris(3-mercaptopropionate) is 9.6, and the solubility parameter of dipentaerythritol hexa(3-mercaptopropionate) is 11.4. The amine curing agent is not particularly limited, and examples thereof include hexamethylenediamine, octanediamine, decanediamine, and 3,9-bis(3-aminopropyl)-2,4,8,10-tetraro [5.5] Undecane, bis(4-aminocyclohexyl)methane, m-phenylenediamine, and diaminodiphenylphosphonium. Examples of the above thermal cationic initiator include a lanthanide cationic curing agent.It is a cationic hardener and a lanthanide cationic hardener. The ruthenium-based cation hardener may, for example, be bis(4-tert-butylphenyl)phosphonium hexafluorophosphate. As abovea cationic hardener, exemplified by trimethyl tetrafluoroborateWait. Examples of the ruthenium-based cation hardener include tris(p-tolyl)phosphonium hexafluorophosphate. The thermal radical generating agent is not particularly limited, and examples thereof include an azo compound and an organic peroxide. Examples of the azo compound include azobisisobutyronitrile (AIBN) and the like. Examples of the organic peroxide include ditributyl peroxide and methyl ethyl ketone peroxide. Examples of the thermosetting agent having an isomeric cyanuric acid skeleton include tris[(3-mercaptopropyloxy)ethyl]isocyanurate. The reaction initiation temperature of the above-mentioned thermosetting agent is preferably 50 ° C or more, more preferably 70 ° C or more, further preferably 80 ° C or more, and preferably 250 ° C or less, more preferably 200 ° C or less, and further preferably 150 ° C or less, particularly preferably 140 ° C or less. When the reaction initiation temperature of the above-mentioned thermosetting agent is not less than the above lower limit and not more than the above upper limit, the solder is more efficiently disposed on the electrode. The reaction initiation temperature of the above-mentioned thermosetting agent is particularly preferably 80 ° C or more and 140 ° C or less. The reaction initiation temperature of the thermal curing agent is preferably higher than the melting point of the solder in the conductive particles, more preferably 5 ° C or higher, from the viewpoint of more effectively disposing the solder on the electrode. Jia is 10°C higher. The reaction initiation temperature of the above-mentioned thermosetting agent means a temperature at which an exothermic peak in DSC (differential scanning calorimetry) starts to rise. From the viewpoint of further suppressing the generation of black soot, the molecular weight of the above-mentioned thermosetting agent having an iso-cyanuric acid skeleton is preferably 200 or more, more preferably 300 or more, and is preferably 1,000 or less, more preferably 600 or less. . The content of the above-mentioned thermosetting agent is not particularly limited. The content of the above-mentioned thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, and preferably 200 parts by weight or less, more preferably 100 parts by weight or less, based on 100 parts by weight of the thermosetting compound. Further, it is preferably 75 parts by weight or less. When the content of the thermosetting agent is at least the above lower limit, the conductive material is easily sufficiently cured. When the content of the thermosetting agent is at most the above upper limit, the remaining thermosetting agent that does not participate in hardening after hardening is less likely to remain, and the heat resistance of the cured product is further improved. In view of further suppressing the generation of black soot, the content of the thermosetting agent having the iso-cyanuric acid skeleton in 100% by weight of the conductive material is preferably 5% by weight or more, more preferably 10% by weight or more. It is preferably 30% by weight or less, more preferably 20% by weight or less. (Phosphoric Acid Compound) From the viewpoint of allowing the solder to be more efficiently concentrated on the electrode, it is preferred that the conductive material contains a phosphoric acid compound. These phosphoric acid compounds may be used alone or in combination of two or more. The phosphoric acid compound is preferably a phosphorous acid or a phosphite, more preferably a phosphite, and more preferably a phosphite is the following formula (11), from the viewpoint of allowing the solder to be more efficiently concentrated on the electrode. Represents the phosphite. [Chemistry 7]In the above formula (11), R is preferably an organic group having 1 or more and 15 or less carbon atoms, more preferably an organic group having 6 or more and 15 or less carbon atoms. The phosphoric acid compound preferably has one or more organic groups having 6 or more carbon atoms and 15 or less carbon atoms, more preferably one or more hydrocarbon groups having 6 or more carbon atoms and 15 or less carbon atoms, and particularly preferably one or more carbon numbers of 6 or more. An aryl group of 15 or less. The above phosphoric acid compound may have two such groups. It is preferably a phosphorous acid having at least one aryl group, more preferably a phosphorous acid having two aryl groups, and still more preferably a diphenylphosphoric acid or a dibenzylphosphoric acid. The phosphorous acid having two aryl groups may have one phenyl group, may have two phenyl groups, may have one benzyl group, or may have two benzyl groups. The pH of the aqueous solution obtained by dissolving 1 g of the above phosphoric acid compound in 10 g of water was measured. The pH of the aqueous solution is preferably 3.5 or more, more preferably 3.7 or more, still more preferably 5 or more, and preferably 6 or less. The pH of the above aqueous solution may also be 5 or less. When the pH of the aqueous solution is not less than the above lower limit and not more than the above upper limit, the solder is more efficiently concentrated on the electrode. The pH of the aqueous solution may exceed 3, may exceed 4, may exceed 5, or may be 7 or more. The pH of the aqueous solution can be measured using a pH meter ("D-72" manufactured by HORIBA) and an electrode ToupH electrode 9615-10D. The phosphite is preferably a phosphite monoester or a phosphite diester from the viewpoint of allowing the solder to be more efficiently concentrated on the electrode. The phosphoric acid compound preferably has no (meth)acrylonitrile group, and is preferably not a (meth) acrylate compound, from the viewpoint of allowing the solder to be more efficiently concentrated on the electrode. The above phosphoric acid compound may be a reactant of phosphoric acid or a phosphoric acid compound and an imidazole compound. The content of the phosphoric acid compound is preferably 0.1% by weight or more, more preferably 1% by weight, based on 100% by weight of the conductive material, in order to further improve the conduction reliability of the solder. The above is preferably 15% by weight or less, more preferably 10% by weight or less. (flux) The above conductive material contains a flux. By using a flux, the solder can be more efficiently disposed on the electrode. When the solder is subjected to the fluxing action by the flux, black soot is easily generated. However, in the present invention, since a compound having a hetero-cyanuric acid skeleton is used, generation of black soot can be suppressed. The flux is not particularly limited. As the flux, a flux which is generally used for solder bonding or the like can be used. Examples of the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, a phosphoric acid, a derivative of phosphoric acid, an organic halide, an anthracene, and an organic acid. And turpentine and so on. The flux may be used singly or in combination of two or more. Examples of the molten salt include ammonium chloride and the like. Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid. Examples of the rosin include activated rosin and non-activated rosin. The flux is preferably an organic acid or rosin having two or more carboxyl groups. The flux may be an organic acid having two or more carboxyl groups or a rosin. By using an organic acid or rosin having two or more carboxyl groups, the conduction reliability between the electrodes is further improved. The above rosin is a rosin mainly composed of rosin acid. The flux is preferably rosin, more preferably rosin acid. By using the preferred flux, the conduction reliability between the electrodes is further improved. From the viewpoint of further suppressing the generation of black soot, a flux having an iso-cyanuric skeleton is preferred. The above conductive material may also contain a flux that does not have a hetero-cyanuric acid skeleton. Examples of the flux having a hetero-cyanuric acid skeleton include a compound having a carboxyl group and a hetero-cyanuric acid skeleton. As a commercial item of the above-mentioned flux which has a hetero-cyanuric acid skeleton, CIC acid, MACIC-1 (made by Shikoku Chemical Industry Co., Ltd.), etc. are mentioned. The above conductive material may also contain a flux that does not have a hetero-cyanuric acid skeleton. The active temperature (melting point) of the flux is preferably 50 ° C or higher, more preferably 70 ° C or higher, further preferably 80 ° C or higher, and preferably 200 ° C or lower, more preferably 190 ° C or lower, and further preferably It is 160 ° C or less, more preferably 150 ° C or less, and still more preferably 140 ° C or less. When the activation temperature of the flux is not less than the above lower limit and not more than the above upper limit, the flux effect is more effectively exhibited, and the solder can be more efficiently disposed on the electrode. The active temperature (melting point) of the above flux is preferably 80 ° C or more and 190 ° C or less. The active temperature (melting point) of the above flux is particularly preferably 80 ° C or more and 140 ° C or less. Examples of the flux having a living temperature (melting point) of the flux of 80 ° C or more and 190 ° C or less include succinic acid (melting point 186 ° C), glutaric acid (melting point 96 ° C), and adipic acid (melting point 152 ° C). a dicarboxylic acid such as pimelic acid (melting point 104 ° C) or suberic acid (melting point 142 ° C); benzoic acid (melting point 122 ° C), malic acid (melting point 130 ° C), and the like. Further, the flux has a boiling point of preferably 200 ° C or lower. From the viewpoint of more efficiently disposing the solder on the electrode, the melting point of the flux is preferably higher than the melting point of the solder in the conductive particles, more preferably 5 ° C or higher, and even more preferably 10 Above °C. From the viewpoint of more efficiently disposing the solder on the electrode, the melting point of the flux is preferably higher than the reaction initiation temperature of the thermal curing agent, more preferably 5 ° C or higher, and further preferably 10 higher. Above °C. The flux may be dispersed in the conductive material or attached to the surface of the conductive particles. By the melting point of the flux being higher than the melting point of the solder, the solder can be efficiently concentrated on the electrode portion. The reason for this is that when heat is applied during bonding, if the electrode formed on the member to be connected is compared with the portion of the member to be connected around the electrode, the thermal conductivity of the electrode portion is higher than the portion of the member to be connected around the electrode. The thermal conductivity is such that the temperature of the electrode portion rises faster. At the stage of exceeding the melting point of the solder in the conductive particles, although the solder in the conductive particles is melted, since the melting point (active temperature) of the flux is not reached, the oxide film formed on the surface is not removed. In this state, since the temperature of the electrode portion first reaches the melting point (active temperature) of the flux, the oxide film on the surface of the solder in the conductive particles on the electrode is preferentially removed, or the conductivity is activated by the activated flux. The charge on the surface of the solder in the particles is neutralized, whereby the solder is wettable and diffuses onto the surface of the electrode. Thereby, the solder can be efficiently concentrated on the electrode. The above flux is preferably a flux which releases a cation by heating. By using a flux that releases cations by heating, the solder can be more efficiently disposed on the electrodes. The above-mentioned hot cation initiator can be mentioned as the flux which releases the cation by heating. From the viewpoint of further suppressing the generation of black soot, the molecular weight of the above-mentioned flux having an iso-cyanuric acid skeleton is preferably 200 or more, more preferably 300 or more, and is preferably 1,000 or less, more preferably 600 or less. The content of the flux in 100% by weight of the conductive material is preferably 0.5% by weight or more, and preferably 30% by weight or less, more preferably 25% by weight or less. When the content of the flux is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode can be more effectively removed. In view of further suppressing the generation of black soot, the content of the flux having the iso-cyanuric acid skeleton in 100% by weight of the conductive material is preferably 5% by weight or more, more preferably 10% by weight or more, and It is preferably 30% by weight or less, more preferably 20% by weight or less. (Other Ingredients) The above conductive material may optionally contain, for example, a filler, a bulking agent, a softener, a plasticizer, a polymerization catalyst, a hardening catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, and an ultraviolet absorption. Various additives such as agents, lubricants, antistatic agents and flame retardants. (Manufacturing Method of Connection Structure and Connection Structure) The connection structure of the present invention includes a first connection target member having at least one first electrode on its surface, and a second connection target member having at least one second electrode on its surface, and A connection portion between the first connection target member and the second connection target member. In the connection structure of the present invention, the material of the connection portion is the above-mentioned conductive material, and the connection portion is a cured product of the above-mentioned conductive material. In the connection structure of the present invention, the first electrode and the second electrode are electrically connected by a solder portion of the connection portion. The method for manufacturing the connection structure includes the step of disposing the conductive material on a surface of a first connection member having at least one first electrode on the surface thereof by using the conductive material, and using the first electrode and the second electrode a step of disposing a second connection member having at least one second electrode on the surface of the conductive material on a surface opposite to the first connection member side; wherein the conductive material is heated to In the conductive particles, the connection portion connecting the first connection member and the second connection member is formed by the conductive material, and the first portion is formed by the solder portion of the connection portion. The step of electrically connecting the electrode to the second electrode. Preferably, the conductive material is heated to a temperature higher than a curing temperature of the thermosetting component or the thermosetting compound. In the connection structure of the present invention and the method of manufacturing the connection structure, since a specific conductive material is used, solder in the plurality of conductive particles is likely to be collected between the first electrode and the second electrode, and the solder can be soldered. Efficiently placed on the electrode (line). Further, it is difficult to arrange one of the solders in a region (interval) in which the electrodes are not formed, and the amount of solder disposed in a region where the electrodes are not formed can be extremely small. Therefore, the conduction reliability between the first electrode and the second electrode can be improved. Moreover, the electrical connection between the electrodes adjacent to each other that are not connected can be prevented, and the insulation reliability can be improved. Further, in order to efficiently dispose the solder in the plurality of conductive particles on the electrode and to minimize the amount of the solder disposed in the region where the electrode is not formed, it is preferable to use a conductive paste instead of the conductive film. The thickness of the solder portion between the electrodes is preferably 10 μm or more, more preferably 20 μm or more, and is preferably 100 μm or less, more preferably 80 μm or less. The solder wetted area on the surface of the electrode (the area where the area of the exposed electrode is 100% in contact with the solder) is preferably 50% or more, more preferably 60% or more, still more preferably 70% or more, and is preferably 100% or less. In the method of manufacturing the connection structure of the present invention, in the step of arranging the second connection member and the step of forming the connection portion, it is preferable that the second connection object is applied to the conductive material without applying pressure. In the step of arranging the second connection member and the step of forming the connection portion, the weight of the member is preferably a pressing pressure that does not apply a force exceeding the weight of the second connection member to the conductive material. In such cases, the uniformity of the amount of solder in the plurality of solder portions can be further improved. Further, the thickness of the solder portion can be more effectively increased, and the solder in the plurality of conductive particles can be easily accumulated in a large amount between the electrodes, and the solder in the plurality of conductive particles can be more efficiently disposed on the electrode (line). on. Further, it is difficult to arrange one of the plurality of conductive particles in a region (interval) in which the electrode is not formed, and the amount of the solder disposed in the conductive particles in the region where the electrode is not formed can be made smaller. Therefore, the conduction reliability between the electrodes can be further improved. Moreover, the electrical connection between the electrodes adjacent to each other that are not connected can be further prevented, and the insulation reliability can be further improved. Furthermore, in the step of arranging the second connection member and the step of forming the connection portion, if the weight of the second connection member is applied to the conductive material without applying pressure, the connection portion is disposed before the connection portion is formed. The solder in the region (interval) where the electrode is not formed is more likely to be collected between the first electrode and the second electrode, and the solder in the plurality of conductive particles can be more efficiently disposed on the electrode (wire). In the present invention, a configuration in which a conductive paste is used instead of a conductive film and a combination of weights of the second connection target member applied to the conductive paste without pressurization is used, and the present invention is obtained at a higher level. In terms of effect, it has a greater meaning. Further, in WO 2008/023452 A1, from the viewpoint of squeezing the solder powder to the surface of the electrode and moving it efficiently, it is preferable to pressurize at a specific pressure in the subsequent step, and it is described From the viewpoint of further reliably forming the solder region, the pressurizing pressure is, for example, 0 MPa or more, preferably 1 MPa or more, and further described that the pressure applied to the subsequent tape may be 0 MPa or may be configured by The weight of the component that is subsequently carried on is applied to the belt to apply a specific pressure. WO 2008/023452 A1 discloses that the pressure applied to the subsequent tape may be 0 MPa, but there is no description about the difference between the effect of applying a pressure exceeding 0 MPa and the case of setting it to 0 MPa. Further, WO2008/023452A1 does not have any knowledge about the importance of using a paste-like conductive paste instead of a film. Further, when a conductive paste is used instead of the conductive film, it is easy to adjust the thickness of the connection portion and the solder portion by the amount of the conductive paste applied. On the other hand, in the case of the conductive film, there is a problem that a conductive film of a different thickness or a conductive film of a specific thickness must be prepared in order to change or adjust the thickness of the connection portion. Further, in the case of the conductive film, compared with the conductive paste, the melt viscosity of the conductive film cannot be sufficiently lowered at the melting temperature of the solder, and the tendency of the solder to aggregate is easily hindered. Hereinafter, specific embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a cross-sectional view schematically showing a connection structure obtained by using a conductive material according to an embodiment of the present invention. The connection structure 1 shown in FIG. 1 includes a first connection object member 2, a second connection object member 3, and a connection portion 4 that connects the first connection object member 2 and the second connection object member 3. The connecting portion 4 is formed of the above-described conductive material. In the present embodiment, the conductive material contains solder particles as conductive particles. The connection portion 4 has a solder portion 4A in which a plurality of solder particles are aggregated and joined to each other, and a cured portion 4B in which a thermosetting component is thermally cured. The first connection target member 2 has a plurality of first electrodes 2a on the surface (upper surface). The second connection target member 3 has a plurality of second electrodes 3a on the front surface (lower surface). The first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection object member 2 and the second connection object member 3 are electrically connected by the solder portion 4A. Further, in the connection portion 4, solder is not present in a region (a portion of the cured portion 4B) different from the solder portion 4A collected between the first electrode 2a and the second electrode 3a. There is no solder separated from the solder portion 4A in a region different from the solder portion 4A (the portion of the cured portion 4B). In addition, in a small amount, solder may be present in a region (a portion of the cured portion 4B) different from the solder portion 4A collected between the first electrode 2a and the second electrode 3a. As shown in FIG. 1, in the connection structure 1, a plurality of solder particles are collected between the first electrode 2a and the second electrode 3a, and after a plurality of solder particles are melted, the melt of the solder particles is wetted and diffused on the surface of the electrode. After the curing, the solder portion 4A is formed. Therefore, the connection area between the solder portion 4A and the first electrode 2a and the solder portion 4A and the second electrode 3a is increased. In other words, by using the solder particles, the solder portion 4A and the first electrode 2a, and the solder portion 4A and the second electrode are used as compared with the case where the conductive portion of the metal such as nickel, gold or copper is used. The contact area of 3a increases. Therefore, the connection reliability and connection reliability of the connection structure 1 are improved. Furthermore, fluxes are often deactivated by heating. Further, in the connection structure 1 shown in Fig. 1, the solder portions 4A are all located in the opposing regions between the first and second electrodes 2a and 3a. In the connection structure 1X of the variation shown in FIG. 3, only the connection portion 4X is different from the connection structure 1 shown in FIG. The connecting portion 4X has a solder portion 4XA and a cured portion 4XB. As in the connection structure 1X, most of the solder portion 4XA may be located in a region where the first and second electrodes 2a and 3a face each other, and a portion of the solder portion 4XA may be opposed to the first and second electrodes 2a and 3a. The area extends laterally. A portion of the solder portion 4XA-based solder portion 4XA that protrudes laterally from the region in which the first and second electrodes 2a and 3a face each other is not solder separated from the solder portion 4XA. Further, in the present embodiment, the amount of solder separated from the solder portion may be small, but the solder separated from the solder portion may be present in the cured portion. When the amount of use of the solder particles is reduced, the connection structure 1 is easily obtained. When the amount of use of the solder particles is increased, the connection structure 1X is easily obtained. In view of further improving the conduction reliability, when the first electrode and the second electrode are opposed to each other along the laminated direction of the first electrode, the connecting portion, and the second electrode, it is preferably 50% or more (more preferably 60% or more, further preferably 70% or more, and particularly preferably 80% or more) of the area of the portion where the first electrode and the second electrode face each other. The solder portion in the above connection portion is disposed for 90% or more. Next, an example of a method of manufacturing the bonded structure 1 using the conductive material of one embodiment of the present invention will be described. First, the first connection target member 2 having the first electrode 2a on the front surface (upper surface) is prepared. Next, as shown in FIG. 2(a), a conductive material 11 containing a thermosetting component 11B and a plurality of solder particles 11A is placed on the surface of the first connection member 2 (first step). The conductive material 11 used contains a thermosetting compound and a thermosetting agent as the thermosetting component 11B. The conductive material 11 is disposed on the surface of the first connection object member 2 on which the first electrode 2a is provided. After the conductive material 11 is disposed, the solder particles 11A are disposed on both the first electrode 2a (line) and the region (interval) where the first electrode 2a is not formed. The method of disposing the conductive material 11 is not particularly limited, and examples thereof include coating by a dispenser, screen printing, and ejection by an inkjet device. Moreover, the second connection member 3 having the second electrode 3a on the front surface (lower surface) is prepared. Next, as shown in FIG. 2(b), in the electrically conductive material 11 on the surface of the first connection member 2, the second connection is placed on the surface of the electrically conductive material 11 opposite to the side of the first connection member 2; Target member 3 (second step). The second connection member 3 is placed on the surface of the conductive material 11 from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other. Next, the conductive material 11 is heated to a temperature equal to or higher than the melting point of the solder particles 11A (third step). It is preferred to heat the conductive material 11 to a temperature higher than the hardening temperature of the thermosetting component 11B (adhesive). At the time of this heating, the solder particles 11A existing in the region where the electrode is not formed are collected between the first electrode 2a and the second electrode 3a (self-aggregation effect). In the case where a conductive paste is used instead of the conductive film, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. Further, the solder particles 11A are melted and joined to each other. Further, the thermosetting component 11B is thermally cured. As a result, as shown in FIG. 2( c ), the connecting portion 4 that connects the first connection target member 2 and the second connection target member 3 is formed by the conductive material 11 . The connection portion 4 is formed by the conductive material 11, and the solder portion 4A is joined by a plurality of solder particles 11A, and is thermally cured by the thermosetting component 11B to form the cured portion 4B. In the present embodiment, it is preferable that no pressurization is performed in the second step and the third step. In this case, the weight of the second connection member 3 is applied to the conductive material 11. Therefore, when the connection portion 4 is formed, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. In addition, when pressurization is performed in at least one of the second step and the third step, the tendency of the solder particles to be concentrated between the first electrode and the second electrode is inhibited. Further, in the present embodiment, when the second connection member is superposed on the first connection member to which the conductive material is applied, the electrode of the first connection member and the second connection target are not applied. When the alignment of the electrodes of the member is misaligned, even when the first connection member and the second connection member are overlapped, the displacement can be corrected, and the electrode of the first connection member can be connected to the second connection. Electrode connection of the object member (automatic alignment effect). The solder is melted between the electrode of the first connection member and the electrode of the second connection member between the electrode of the first connection member and the electrode of the second connection member. When the area in contact with other components of the conductive material is minimized, the energy becomes stable, and therefore the force of the connected structure of the minimum area, that is, the aligned connection structure, acts. In this case, it is preferable that the conductive material is not cured, and the viscosity of the components other than the conductive particles of the conductive material is sufficiently low under the conditions of the temperature and time. Thus, the connection structure 1 shown in Fig. 1 is obtained. Furthermore, the second step and the third step described above can be continuously performed. Further, after the second step, the obtained first connection member 2 and the laminated body of the conductive material 11 and the second connection member 3 may be moved to the heating unit, and the third step may be performed. In order to perform the above heating, the laminated body may be disposed on the heating member, or the laminated body may be disposed in the heated space. The heating temperature in the third step is preferably 140 ° C or higher, more preferably 160 ° C or higher, and is preferably 450 ° C or lower, more preferably 250 ° C or lower, and still more preferably 200 ° C or lower. The heating method in the third step may be a method of heating the entire connection structure to a temperature equal to or higher than the melting point of the solder and a curing temperature of the thermosetting component by using a reflow furnace or an oven, or only connecting the connection structure. The method of locally heating to a temperature higher than a melting point of the solder and a hardening temperature of the thermosetting component. The first and second connection target members are not particularly limited. Specific examples of the first and second connection target members include electronic components such as a semiconductor wafer, a semiconductor package, an LED (Light Emitting Diode) wafer, an LED package, a capacitor, and a diode; Electronic components such as a resin film, a printed circuit board, a flexible printed circuit board, a flexible flat cable, a rigid flexible substrate, a glass substrate such as a glass substrate, and a glass substrate. The first and second connection target members are preferably electronic components. At least one of the first connection target member and the second connection target member is preferably a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate. Preferably, the second connection member is a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate. The resin film, the flexible printed circuit board, the flexible flat cable, and the rigid flexible substrate have high flexibility and relatively lightweight properties. When a conductive film is used for the connection of such a connection member, there is a tendency that solder is hard to be accumulated on the electrode. On the other hand, by using a conductive paste, even if a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate is used, it is possible to sufficiently improve the conduction reliability between the electrodes by efficiently collecting the solder on the electrodes. . When a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate is used, it is possible to more effectively obtain conduction between electrodes due to no pressurization as compared with the case of using other connection member such as a semiconductor wafer. Increased reliability. In the form of the connection target member, there are surrounding arrays, area arrays, and the like. As a feature of each member, the electrodes in the surrounding array substrate exist only in the outer peripheral portion of the substrate. The electrodes in the area array substrate exist in the plane. Examples of the electrode provided in the connection target member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, a SUS electrode, and a tungsten electrode. In the case where the connection target member is a flexible printed substrate, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode or a copper electrode. In the case where the connection target member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode or a tungsten electrode. Further, in the case where the electrode is an aluminum electrode, it may be an electrode formed only of aluminum, or an electrode having an aluminum layer on a surface layer of the metal oxide layer. Examples of the material of the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, Ga, and the like. In the form of the connection target member, there are surrounding arrays, area arrays, and the like. As a feature of each member, the electrodes in the surrounding array substrate exist only in the outer peripheral portion of the substrate. The electrodes in the area array substrate exist in the plane. Hereinafter, the present invention will be specifically described by way of examples and comparative examples. The invention is not limited to the following examples. Thermosetting compound: "YL980" manufactured by Mitsubishi Chemical Corporation, "TEPIC-PAS" manufactured by Nissan Chemical Industry Co., Ltd., bisphenol A type epoxy resin, modified with epoxy compound TEPIC-PAS of iso-cyanuric acid skeleton A compound (synthetic product) obtained by converting an epoxy group of "TEPIC" manufactured by Nissan Chemical Industries Co., Ltd. into an ethylene sulfide group, and an episulfide compound having a hetero-cyanuric acid skeleton, manufactured by Nissan Chemical Industries Co., Ltd. TEPIC-VL "TEPIC-UC" manufactured by Nissan Chemical Industries Co., Ltd. Thermal hardener: "HXA3922HP" manufactured by Asahi Kasei E-MATERIALS Co., Ltd. "TEMPIC" manufactured by SC Organic Chemical Industry Co., Ltd. Hardening accelerator: Shikoku Chemical Industry Co., Ltd. "2MA-OK", imidazole hardening accelerator phosphate compound: "JP260" manufactured by Seongbuk Chemical Industry Co., Ltd., diphenyl hydrogen phosphate, (C6 H5 -O-)2 P(=O)H Flux: "CIC" manufactured by Shigaki Chemical Co., Ltd. "MACIC-1" manufactured by Shikoku Chemicals Co., Ltd. Conductive particles: SnBi solder particles (average particle size 30 μm), Mitsui Manufactured by a metal company, Sn42Bi58 (Examples 1 to 11 and Comparative Example 1) (1) Preparation of anisotropic conductive paste The components shown in Tables 1 and 2 below were prepared by the amounts shown in Tables 1 and 2 below. And an anisotropic conductive paste is obtained. (2) Preparation of the first connection structure (area array substrate) As the first connection target member, the surface of the semiconductor wafer main body (size 5 × 5 mm, thickness 0.4 mm) is arranged in an area array at a pitch of 400 μm. A copper electrode of μm and a semiconductor wafer having a passivation film (polyimine, thickness 5 μm, opening diameter of electrode portion 200 μm) formed on the outermost surface. The number of copper electrodes is 100 in total of 10 × 10 for each semiconductor wafer. The surface of the epoxy glass substrate main body (size: 20 × 20 mm, thickness: 1.2 mm, material FR-4) is disposed so as to have the same pattern with respect to the electrode of the first connection member. A copper electrode, and a glass substrate having a solder resist film formed in a region where the copper electrode is not disposed. The step difference between the surface of the copper electrode and the surface of the solder resist film is 15 μm, and the solder resist film is more prominent than the copper electrode. The anisotropic conductive paste immediately after the application was applied to the upper surface of the above-mentioned epoxy glass substrate so as to have a thickness of 100 μm to form an anisotropic conductive paste layer. Next, the semiconductor wafer is surface-mounted with the electrodes facing the anisotropic conductive paste layer. The weight of the above semiconductor wafer is applied to the anisotropic conductive paste layer. The temperature of the anisotropic conductive paste layer was heated from this state to 139 ° C (the melting point of the solder) 5 seconds after the start of the temperature rise. Further, the anisotropic conductive paste layer was heated to a temperature of 160 ° C after 15 seconds from the start of the temperature rise, and the anisotropic conductive paste was cured to obtain a bonded structure. No pressure is applied during heating. (3) The second connection structure (the surrounding array substrate) was prepared as a first connection target member, and was prepared on the surface of the semiconductor wafer main body (size 5 × 5 mm, thickness 0.4 mm) at a peripheral pitch of the wafer at a pitch of 400 μm ( There are 250 μm copper electrodes arranged around, and a semiconductor wafer having a passivation film (polyimine, thickness 5 μm, opening diameter of the electrode portion 200 μm) is formed on the outermost surface. Regarding the number of copper electrodes, the total number of semiconductor wafers is 10 x 4 sides. As the second connection target member, copper is disposed on the surface of the epoxy glass substrate body (size: 20 × 20 mm, thickness: 1.2 mm, material FR-4) so as to have the same pattern with respect to the electrode of the first connection member. The step of the electrode and the surface of the copper electrode on which the solder resist film is formed in the region where the copper electrode is not disposed is 15 μm from the surface of the solder resist film, and the solder resist film is more prominent than the copper electrode. The anisotropic conductive paste immediately after the application was applied to the periphery of the upper surface of the above-mentioned epoxy glass substrate so as to have a thickness of 100 μm to form an anisotropic conductive paste layer. Next, the semiconductor wafer is surface-mounted with the electrodes facing the anisotropic conductive paste layer. The weight of the above semiconductor wafer is applied to the anisotropic conductive paste layer. The temperature of the anisotropic conductive paste layer was heated from this state to 139 ° C (the melting point of the solder) 5 seconds after the start of the temperature rise. Further, the anisotropic conductive paste layer was heated to a temperature of 160 ° C after 15 seconds from the start of the temperature rise, and the anisotropic conductive paste was cured to obtain a bonded structure. No pressure is applied during heating. (Evaluation) (1) Viscosity was measured using STRESSTECH (manufactured by EOLOGICA Co., Ltd.) under the conditions of strain control 1 rad, frequency 1 Hz, temperature increase rate 20 ° C/min, and measurement temperature range 40 to 200 ° C. The viscosity (ηmp) of the melting point of the solder in the conductive particles at °C. (2) Generation of black soot It is evaluated whether or not the black soot derived from solder is contained in the connection portion (cured portion) of the first and second connection structures obtained. The generation of black soot was determined according to the following criteria. [Criteria for judging black soot] ○○○: No black soot is produced, and there is no slight coloring. ○○: Black soot is not produced, and there is a slightly colored portion ○: A very small amount of black soot is generated (does not affect the connection resistance) Degree) △: A small amount of black soot is generated (a slight influence on the degree of connection resistance) ×: black soot is generated (very much influence on the connection resistance) (3) The arrangement accuracy of the solder on the electrode is the first and second connections obtained. In the structure, the area of the portion where the first electrode and the second electrode face each other when the first electrode and the second electrode face each other in the direction in which the first electrode, the connecting portion, and the second electrode are opposed to each other is 100. Among the %, the ratio X of the area of the solder portion in the connection portion was evaluated. The arrangement accuracy of the solder on the electrodes was determined in accordance with the following criteria. [Criteria for Judging the Arrangement Accuracy of the Solder on the Electrode] ○○○: The ratio X is 95% or more ○○: The ratio X is 90% or more and less than 95% ○: The ratio X is 80% or more and less than 90% △ : ratio X is 60% or more, less than 80% ×: ratio X is less than 60% (4) The conduction reliability between the upper and lower electrodes is in the obtained first and second connection structures (n = 15) The connection resistance between the upper and lower electrodes was measured by a four-terminal method. Calculate the average of the connection resistance. Furthermore, the connection resistance can be obtained by measuring the voltage at which a constant current flows in accordance with the relationship of voltage=current×resistance. The conduction reliability was determined according to the following criteria. [Criteria for the determination of the conduction reliability] ○○: The average value of the connection resistance is 8.0 Ω or less. ○: The average value of the connection resistance exceeds 8.0 Ω and is 10.0 Ω or less. △: The average value of the connection resistance exceeds 10.0 Ω and is 15.0 Ω or less. ×: The average value of the connection resistance exceeds 15.0 Ω. (5) The insulation reliability between the adjacent electrodes is obtained in the first and second connection structures (n = 15) at a temperature of 85 ° C and a humidity of 85%. After standing for 100 hours in the environment, a voltage of 5 V was applied between the adjacent electrodes, and the resistance value was measured at 25 locations. The insulation reliability was determined according to the following criteria. [Determination of insulation reliability] ○○: The average value of the connection resistance is 107 Ω or more ○: The average value of the connection resistance is 106 Ω or more and less than 107 Ω △: The average value of the connection resistance is 105 Ω or more and less than 106 Ω ×: the average value of the connection resistance is less than 105 Ω The results are shown in Tables 1 and 2 below. [Table 1] [Table 2] The same tendency can be seen in the case of using a flexible printed circuit board, a resin film, a flexible flat cable, and a rigid flexible substrate.

1‧‧‧連接構造體
1X‧‧‧連接構造體
2‧‧‧第1連接對象構件
2a‧‧‧第1電極
3‧‧‧第2連接對象構件
3a‧‧‧第2電極
4‧‧‧連接部
4A‧‧‧焊料部
4B‧‧‧硬化物部
4X‧‧‧連接部
4XA‧‧‧焊料部
4XB‧‧‧硬化物部
11‧‧‧導電材料
11A‧‧‧焊料粒子(導電性粒子)
11B‧‧‧熱硬化性成分
21‧‧‧導電性粒子(焊料粒子)
31‧‧‧導電性粒子
32‧‧‧基材粒子
33‧‧‧導電部(具有焊料之導電部)
33A‧‧‧第2導電部
33B‧‧‧焊料部
41‧‧‧導電性粒子
42‧‧‧焊料部
1‧‧‧Connection structure
1X‧‧‧Connection structure
2‧‧‧1st connection object component
2a‧‧‧1st electrode
3‧‧‧2nd connection object component
3a‧‧‧2nd electrode
4‧‧‧Connecting Department
4A‧‧‧ solder department
4B‧‧‧ Hardened Parts
4X‧‧‧Connecting Department
4XA‧‧‧ solder department
4XB‧‧‧ Hardened Parts Department
11‧‧‧Electrical materials
11A‧‧‧ solder particles (conductive particles)
11B‧‧‧ thermosetting ingredients
21‧‧‧Electrical particles (solder particles)
31‧‧‧Electrical particles
32‧‧‧Substrate particles
33‧‧‧Electrically conductive parts (with conductive parts of solder)
33A‧‧‧2nd Conductive Department
33B‧‧‧ solder department
41‧‧‧Electrical particles
42‧‧‧ solder department

圖1係模式性地表示使用本發明之一實施形態之導電材料而獲得之連接構造體之剖面圖。 圖2(a)~(c)係用以說明使用本發明之一實施形態之導電材料而製造連接構造體之方法之一例之各步驟的剖面圖。 圖3係表示連接構造體之變化例之剖面圖。 圖4係表示可用於導電材料之導電性粒子之第1例之剖面圖。 圖5係表示可用於導電材料之導電性粒子之第2例之剖面圖。 圖6係表示可用於導電材料之導電性粒子之第3例之剖面圖。Fig. 1 is a cross-sectional view schematically showing a connection structure obtained by using a conductive material according to an embodiment of the present invention. 2(a) to 2(c) are cross-sectional views for explaining respective steps of an example of a method of manufacturing a bonded structure using a conductive material according to an embodiment of the present invention. Fig. 3 is a cross-sectional view showing a variation of the connection structure. Fig. 4 is a cross-sectional view showing a first example of conductive particles which can be used for a conductive material. Fig. 5 is a cross-sectional view showing a second example of conductive particles which can be used for a conductive material. Fig. 6 is a cross-sectional view showing a third example of conductive particles which can be used for a conductive material.

no

Claims (14)

一種導電材料,其含有於導電部之外表面部分具有焊料之複數個導電性粒子、熱硬化性成分、及助焊劑,且 含有具有異三聚氰酸骨架之化合物作為上述熱硬化性成分或上述助焊劑, 上述導電性粒子中之上述焊料之熔點下之導電材料之黏度為0.1 Pa・s以上、20 Pa・s以下。A conductive material comprising a plurality of conductive particles having a solder on a surface portion of a conductive portion, a thermosetting component, and a flux, and containing a compound having a hetero-cyanuric acid skeleton as the thermosetting component or the above In the flux, the conductive material at the melting point of the solder in the conductive particles has a viscosity of 0.1 Pa·s or more and 20 Pa·s or less. 如請求項1之導電材料,其中上述具有異三聚氰酸骨架之化合物之含量相對於上述助焊劑之含量之重量比為0.5以上、20以下。The conductive material of claim 1, wherein the weight ratio of the content of the compound having an iso-cyanuric acid skeleton to the content of the flux is 0.5 or more and 20 or less. 如請求項1或2之導電材料,其中上述具有異三聚氰酸骨架之化合物之含量相對於上述導電性粒子之含量之重量比為0.05以上、0.5以下。The conductive material according to claim 1 or 2, wherein a weight ratio of the content of the compound having an iso-cyanuric acid skeleton to the content of the conductive particles is 0.05 or more and 0.5 or less. 如請求項1或2之導電材料,其中上述具有異三聚氰酸骨架之化合物之分子量為200以上、1000以下。The conductive material according to claim 1 or 2, wherein the compound having the isomeric cyanuric acid skeleton has a molecular weight of 200 or more and 1,000 or less. 如請求項1或2之導電材料,其含有具有異三聚氰酸骨架之熱硬化性化合物或具有異三聚氰酸骨架之熱硬化劑作為上述熱硬化性成分。The conductive material according to claim 1 or 2, which contains a thermosetting compound having a hetero-cyanuric acid skeleton or a thermosetting agent having a hetero-cyanuric acid skeleton as the above-mentioned thermosetting component. 如請求項5之導電材料,其含有具有異三聚氰酸骨架之熱硬化性化合物作為上述熱硬化性成分。The electrically conductive material of claim 5, which contains a thermosetting compound having a hetero-cyanuric acid skeleton as the above thermosetting component. 如請求項1或2之導電材料,其含有不具有異三聚氰酸骨架之熱硬化性化合物作為上述熱硬化性成分。The conductive material according to claim 1 or 2, which contains a thermosetting compound having no iso-cyanuric acid skeleton as the above-mentioned thermosetting component. 如請求項7之導電材料,其含有具有異三聚氰酸骨架之熱硬化性化合物與上述不具有異三聚氰酸骨架之熱硬化性化合物作為上述熱硬化性成分。The electrically conductive material of claim 7, which comprises a thermosetting compound having a hetero-cyanuric acid skeleton and the above-mentioned thermosetting compound having no isomeric cyanuric acid skeleton as the thermosetting component. 如請求項7之導電材料,其中上述不具有異三聚氰酸骨架之熱硬化性化合物係不具有異三聚氰酸骨架、且具有芳香族骨架或脂環式骨架之熱硬化性化合物。The electrically conductive material according to claim 7, wherein the thermosetting compound having no isomeric cyanuric acid skeleton is a thermosetting compound having no hetero-cyanuric acid skeleton and having an aromatic skeleton or an alicyclic skeleton. 如請求項1或2之導電材料,其含有磷酸化合物。A conductive material according to claim 1 or 2 which contains a phosphoric acid compound. 如請求項1或2之導電材料,其中上述導電性粒子為焊料粒子。The conductive material of claim 1 or 2, wherein the conductive particles are solder particles. 如請求項1或2之導電材料,其於25℃下為液狀且為導電糊。A conductive material according to claim 1 or 2 which is liquid at 25 ° C and is a conductive paste. 一種連接構造體,其具備 表面具有至少1個第1電極之第1連接對象構件、 表面具有至少1個第2電極之第2連接對象構件、及 將上述第1連接對象構件與上述第2連接對象構件連接之連接部,且 上述連接部為如請求項1至12中任一項之導電材料之硬化物, 上述第1電極與上述第2電極利用上述連接部中之焊料部進行電性連接。A connection structure comprising: a first connection target member having at least one first electrode on its surface; a second connection target member having at least one second electrode on its surface; and the first connection target member and the second connection a connecting portion to which the target member is connected, wherein the connecting portion is a cured material of the conductive material according to any one of claims 1 to 12, wherein the first electrode and the second electrode are electrically connected by a solder portion of the connecting portion . 如請求項13之連接構造體,其中於沿上述第1電極、上述連接部及上述第2電極之積層方向觀察上述第1電極與上述第2電極之互相對向之部分時,於上述第1電極與上述第2電極之互相對向之部分之面積100%中之50%以上配置有上述連接部中之焊料部。The connection structure of claim 13, wherein the first electrode and the second electrode are opposed to each other along a direction of lamination of the first electrode, the connection portion, and the second electrode, and the first The solder portion in the connection portion is disposed at 50% or more of the area of the portion where the electrode and the second electrode face each other.
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