[go: up one dir, main page]

TW201636406A - Polishing pad - Google Patents

Polishing pad Download PDF

Info

Publication number
TW201636406A
TW201636406A TW105100600A TW105100600A TW201636406A TW 201636406 A TW201636406 A TW 201636406A TW 105100600 A TW105100600 A TW 105100600A TW 105100600 A TW105100600 A TW 105100600A TW 201636406 A TW201636406 A TW 201636406A
Authority
TW
Taiwan
Prior art keywords
polishing pad
polishing
layer
polyisocyanate compound
hardness
Prior art date
Application number
TW105100600A
Other languages
Chinese (zh)
Other versions
TWI669360B (en
Inventor
Hirohito Miyasaka
Teppei Tateno
Yoshie Kiraku
Ryuma Matsuoka
Original Assignee
Fujibo Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2015076926A external-priority patent/JP6498498B2/en
Priority claimed from JP2015076928A external-priority patent/JP6513455B2/en
Priority claimed from JP2015076938A external-priority patent/JP2016196067A/en
Application filed by Fujibo Holdings Inc filed Critical Fujibo Holdings Inc
Publication of TW201636406A publication Critical patent/TW201636406A/en
Application granted granted Critical
Publication of TWI669360B publication Critical patent/TWI669360B/en

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention provides a polishing pad with which the surface of a polishing layer is softened during a polishing process. The polishing pad comprises a polishing layer having polyurethane resin, wherein the polishing layer is formed by curing the polyurethane resin comprising a polyisocyanate compound, a polyol compound, a curing agent, and micro hollow spheres .

Description

研磨墊 Abrasive pad

本發明係關於一種用於研磨光學材料、半導體用基板、半導體晶圓、硬碟基板、液晶用玻璃基板、半導體器件等要求高度之表面平坦性之材料之研磨片材或研磨墊。 The present invention relates to an abrasive sheet or a polishing pad for polishing a material requiring a high degree of surface flatness such as an optical material, a substrate for a semiconductor, a semiconductor wafer, a hard disk substrate, a glass substrate for liquid crystal, or a semiconductor device.

對光學材料、半導體基板、半導體晶圓、硬碟基板、液晶用玻璃基板、半導體器件要求非常精密之平坦性。又,半導體材料之表面露出有金屬、有機及無機之絕緣材料等硬度不同之各種材料。為了將此種材料之表面研磨至平坦,研磨墊之表面亦必須始終維持平坦性。當研磨墊之表面之剛性於研磨作業期間發生變化之情形時,無法達成所需之平坦性。例如,會因剛性局部地降低之研磨墊之表面而無法達成精密之平坦性,且出現僅金屬部分被優先地研磨之現象(凹陷)等。 Extremely precise flatness is required for optical materials, semiconductor substrates, semiconductor wafers, hard disk substrates, liquid crystal glass substrates, and semiconductor devices. Further, various materials having different hardnesses such as metal, organic and inorganic insulating materials are exposed on the surface of the semiconductor material. In order to grind the surface of such a material to a flat surface, the surface of the polishing pad must also maintain flatness at all times. When the rigidity of the surface of the polishing pad changes during the polishing operation, the desired flatness cannot be achieved. For example, it is impossible to achieve precise flatness due to the surface of the polishing pad which is locally lowered in rigidity, and a phenomenon in which only the metal portion is preferentially polished (depression) or the like occurs.

另一方面,自開始研磨至更換研磨墊及研磨液之1次研磨作業之終期產生相當多之研磨屑。因研磨屑之累積而於開口部發生堵塞,漿料之保持變差,產生摩擦熱,故而於1次研磨作業期間內,被研磨材料之表面之溫度自初期至終期上升,於包含30℃~90℃之廣泛之溫度範圍內變化。因此,可能與該溫度變化對應地發生研磨墊之表面之局部之剛性變化。又,由於用於化學機械研磨之研磨液隨著溫度上升,化學作用(非研磨物之表面之腐蝕)變強,故具有易產生更大之刮痕之傾向。 On the other hand, a considerable amount of grinding debris is generated from the beginning of the first grinding operation to the replacement of the polishing pad and the polishing liquid. The clogging of the opening occurs due to the accumulation of the grinding debris, and the retention of the slurry is deteriorated, resulting in frictional heat. Therefore, during the first polishing operation, the temperature of the surface of the material to be polished rises from the initial stage to the final stage, and includes 30 ° C. It varies over a wide temperature range of 90 °C. Therefore, it is possible to locally change the rigidity of the surface of the polishing pad in accordance with the temperature change. Further, since the polishing liquid used for chemical mechanical polishing increases in temperature, the chemical action (corrosion of the surface of the non-abrasive material) becomes strong, so that it tends to cause a larger scratch.

專利文獻1(日本專利特開2008-207324號公報)之段落0072中記載 有:以50℃之溫水進行飽和膨潤時23℃下之研磨墊之D硬度[D(23℃、濕潤)]與23℃下之研磨墊之D硬度[D(23℃、乾燥)]之比率[D(23℃、濕潤)]/[D(23℃、乾燥)]為0.9~1.1左右;該比率為0.9以上之研磨墊能夠藉由[E'(50℃、乾燥)]/[E'(50℃、濕潤)]為約2.5以下之研磨墊而獲得。 Paragraph 0072 of Patent Document 1 (Japanese Patent Laid-Open Publication No. 2008-207324) There are: D hardness [D (23 ° C, wet)] of the polishing pad at 23 ° C when saturated swelling with 50 ° C of warm water and D hardness of the polishing pad at 23 ° C [D (23 ° C, dry)] The ratio [D (23 ° C, wet)] / [D (23 ° C, dry)] is about 0.9 to 1.1; the polishing pad having a ratio of 0.9 or more can be obtained by [E' (50 ° C, dry)] / [E '(50 ° C, wet)) is obtained by a polishing pad of about 2.5 or less.

另一方面,專利文獻1之段落0068中記載有:聚胺基甲酸酯彈性體之儲存彈性模數之溫度依存性較大,且其溫度依存性因吸水而發生變化,但一般而言,聚胺基甲酸酯彈性體之[E'(23℃、濕潤)/E'(50℃、濕潤)]較大(例如2.5~20左右);且專利文獻1之研磨墊中,例如,藉由大量填充包括如玻璃轉移溫度為50℃以上且吸水率為4質量%以下之熱塑性樹脂之極細單纖維,能夠降低研磨墊之[E'(23℃、濕潤)/E'(50℃、濕潤)]。 On the other hand, in paragraph 0068 of Patent Document 1, it is described that the temperature dependence of the storage elastic modulus of the polyurethane elastomer is large, and the temperature dependency thereof changes due to water absorption, but in general, [E' (23 ° C, wet) / E' (50 ° C, wet)] of the polyurethane elastomer is large (for example, about 2.5 to 20); and in the polishing pad of Patent Document 1, for example, It is possible to reduce the [E' (23 ° C, wet) / E' (50 ° C, wet) of the polishing pad by filling a large amount of extremely fine single fibers including a thermoplastic resin having a glass transition temperature of 50 ° C or higher and a water absorption ratio of 4% by mass or less. )].

專利文獻雖然1提出進一步減小乾燥時與濕潤時之硬度差,但揭示了僅以聚胺基甲酸酯彈性體則難以實現。 Although Patent Document 1 proposes to further reduce the difference in hardness between drying and wetting, it is revealed that it is difficult to achieve only a polyurethane elastomer.

專利文獻2(日本專利特開2006-144156號公報)中,揭示有一種能夠藉由將室溫時與60℃加溫時之蕭氏A硬度之差抑制在14以下,而穩定地提供高等級之平坦度之研磨墊。然而,專利文獻2中並無有關研磨層表面與內部之硬度差之記載。 In the patent document 2 (JP-A-2006-144156), it is disclosed that the difference between the Shore A hardness at room temperature and 60 ° C can be suppressed to 14 or less, and a high level can be stably provided. Flatness of the polishing pad. However, Patent Document 2 does not describe the difference in hardness between the surface of the polishing layer and the inside.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2008-207324號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-207324

[專利文獻2]日本專利特開2006-144156號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2006-144156

本發明提供一種研磨時研磨層表面軟質化之研磨墊。 The present invention provides a polishing pad in which the surface of the polishing layer is softened during polishing.

即,本發明提供以下者。 That is, the present invention provides the following.

[1]一種研磨墊,其特徵在於:其係具有包含聚胺基甲酸酯樹脂之研磨層者,上述研磨層係使包含多異氰酸酯化合物、多元醇化合物、硬化劑、及微小中空球體之聚胺基甲酸酯樹脂硬化性組合物硬化而形成,且下述式:{(乾燥狀態之研磨墊之D硬度)-(經40℃之溫水飽和膨潤之研磨墊之D硬度)}/(乾燥狀態之研磨墊之D硬度)之值為0.1~0.3,下述式:{(乾燥狀態之研磨墊之儲存彈性模數)-(經40℃之溫水飽和膨潤之研磨墊之儲存彈性模數)}/(乾燥狀態之研磨墊之儲存彈性模數)之值為0.4~0.7。 [1] A polishing pad characterized by comprising a polishing layer comprising a polyurethane resin, wherein the polishing layer comprises a polyisocyanate compound, a polyol compound, a hardener, and a micro hollow sphere. The urethane resin curable composition is formed by hardening, and the following formula: {(D hardness of the polishing pad in a dry state) - (D hardness of the polishing pad which is swelled by warm water at 40 ° C)} / ( The D hardness of the polishing pad in the dry state is 0.1 to 0.3, and the following formula: {(the storage elastic modulus of the polishing pad in a dry state) - (the storage elastic modulus of the polishing pad which is swollen by warm water at 40 ° C) The value of the number /) (the storage elastic modulus of the polishing pad in the dry state) is 0.4 to 0.7.

[2]一種研磨墊,其特徵在於:其係具有包含聚胺基甲酸酯樹脂之研磨層者,上述研磨層係使包含多異氰酸酯化合物、多元醇化合物、含有3,3'-二氯-4,4'-二胺基二苯基甲烷之硬化劑、及微小中空球體之聚胺基甲酸酯樹脂硬化性組合物硬化而形成,且上述硬化劑以硬化劑之總量為100重量%計,包含3~10重量%之四聚物。 [2] A polishing pad characterized by comprising a polishing layer comprising a polyurethane resin, wherein the polishing layer comprises a polyisocyanate compound, a polyol compound, and a 3,3'-dichloro group. The hardening agent of 4,4'-diaminodiphenylmethane and the hardening composition of the micro hollow sphere urethane resin are hardened, and the hardener is 100% by weight based on the total amount of the hardener. It comprises 3 to 10% by weight of a tetramer.

此處,上述四聚物例如由下述式:[化1] 表示。 Here, the above tetramer is, for example, represented by the following formula: [Chemical Formula 1] Said.

[3]一種研磨墊,其特徵在於:其係具有包含聚胺基甲酸酯樹脂之研磨層者,上述研磨層係使包含多異氰酸酯化合物、多元醇化合物、硬化劑、及微小中空球體之聚胺基甲酸酯樹脂硬化性組合物硬化而形成,且至少具有於濕潤研磨時軟化之表層部。 [3] A polishing pad characterized by comprising a polishing layer comprising a polyurethane resin, wherein the polishing layer comprises a polyisocyanate compound, a polyol compound, a hardener, and a micro hollow sphere. The urethane resin curable composition is formed by curing, and at least has a surface layer portion which softens during wet grinding.

[4]如[3]所記載之研磨墊,其中表層部之厚度為50μm以下。 [4] The polishing pad according to [3], wherein the thickness of the surface layer portion is 50 μm or less.

[5]如[3]所記載之研磨墊,其中表層部之厚度小於微小中空球體之直徑。 [5] The polishing pad according to [3], wherein the thickness of the surface portion is smaller than the diameter of the minute hollow sphere.

[6]如[3]所記載之研磨墊,其中於利用熱機械分析法(TMA)進行之針入試驗中,第1段之針入溫度為50~100℃,第2段之針入溫度為150℃以上。 [6] The polishing pad according to [3], wherein in the needle insertion test by thermomechanical analysis (TMA), the needle insertion temperature of the first stage is 50 to 100 ° C, and the needle insertion temperature of the second stage It is above 150 °C.

[7]如[1]至[6]中任一項所記載之研磨墊,其中多異氰酸酯化合物及多元醇化合物包含藉由多異氰酸酯化合物與多元醇化合物之反應而製備之預聚物。 [7] The polishing pad according to any one of [1] to [6] wherein the polyisocyanate compound and the polyol compound comprise a prepolymer prepared by reacting a polyisocyanate compound with a polyol compound.

[8]一種研磨方法,其特徵在於:其係研磨光學材料或半導體材 料之表面之方法,且使用如[1]至[6]中任一項所記載之研磨墊。 [8] A grinding method characterized in that it is an abrasive optical material or a semiconductor material A method of using a polishing pad as described in any one of [1] to [6].

[9]一種減少研磨光學材料或半導體材料之表面時之刮痕之方法,其係使用如[1]至[6]中任一項所記載之研磨墊來減少研磨光學材料或半導體材料之表面時之刮痕。 [9] A method of reducing scratches when polishing an optical material or a surface of a semiconductor material, which uses the polishing pad according to any one of [1] to [6] to reduce the surface of the abrasive optical material or semiconductor material Scratch at the time.

根據本發明,藉由研磨時(大約40℃)研磨層表面被軟化,能夠抑制被研磨物之刮痕等缺陷。又,藉由使研磨層內部具有適度之硬度,能夠維持較高之研磨速率。 According to the invention, the surface of the polishing layer is softened by polishing (about 40 ° C), and defects such as scratches of the object to be polished can be suppressed. Further, by having an appropriate hardness inside the polishing layer, a high polishing rate can be maintained.

圖1係表示利用熱機械分析法(TMA)進行之針入試驗之概略之圖。 Fig. 1 is a schematic view showing a needle insertion test by thermomechanical analysis (TMA).

圖2係表示實施例1之研磨墊之針入試驗之結果之圖。 Fig. 2 is a view showing the results of a needle insertion test of the polishing pad of Example 1.

圖3係表示實施例2之研磨墊之針入試驗之結果之圖。 Fig. 3 is a view showing the results of a needle insertion test of the polishing pad of Example 2.

圖4係表示比較例1之研磨墊之針入試驗之結果之圖。 Fig. 4 is a view showing the results of a needle insertion test of the polishing pad of Comparative Example 1.

(研磨墊) (polishing pad)

本發明之研磨墊具有包含發泡聚胺基甲酸酯樹脂之研磨層。研磨層配置於與被研磨材料直接接觸之位置,研磨墊之其他部分亦可包含用以支持研磨墊之材料,例如橡膠等富有彈性之材料。根據研磨墊之剛性不同,可將研磨墊整體設為一個研磨層。 The polishing pad of the present invention has an abrasive layer comprising a foamed polyurethane resin. The polishing layer is disposed in direct contact with the material to be polished, and other portions of the polishing pad may also include materials for supporting the polishing pad, such as elastic materials such as rubber. Depending on the rigidity of the polishing pad, the polishing pad can be integrally formed as one polishing layer.

本發明之研磨墊除了研磨屑累積時不易於被研磨材料產生刮痕等缺陷以外,與一般研磨墊於形狀上並無較大差異,能夠與一般研磨墊同樣地使用,例如,既能夠一面使研磨墊旋轉一面將研磨層壓抵於被研磨材料進行研磨,亦能夠一面使被研磨材料旋轉一面將其壓抵於研磨層進行研磨。 The polishing pad of the present invention can be used in the same manner as a general polishing pad, and can be used in the same manner as a general polishing pad, in addition to the fact that the polishing pad is not easily scratched by the polishing material, and the like, and can be used in the same manner as a general polishing pad. The polishing pad is polished and laminated against the material to be polished, and the material to be polished can be pressed against the polishing layer while being rotated.

本發明之研磨墊之一態樣之特徵在於:研磨層係使包含多異氰 酸酯化合物、多元醇化合物、硬化劑、及微小中空球體之聚胺基甲酸酯樹脂硬化性組合物硬化而形成,下述式(I):{(乾燥狀態之研磨墊之D硬度)-(經40℃之溫水飽和膨潤之研磨墊之D硬度)}/(乾燥狀態之研磨墊之D硬度)之值為0.1~0.3,更佳為0.15~0.25,下述式(II):{(乾燥狀態之研磨墊之儲存彈性模數)-(經40℃之溫水飽和膨潤之研磨墊之儲存彈性模數)}/(乾燥狀態之研磨墊之儲存彈性模數)之值為0.4~0.9,更佳為0.6~0.85。 One aspect of the polishing pad of the present invention is characterized in that the polishing layer is made to contain polyisocyanide The ester compound, the polyol compound, the curing agent, and the urethane composition of the micro hollow sphere are cured, and the following formula (I): {(D hardness of the polishing pad in a dry state) - (D hardness of the polishing pad saturated with warm water at 40 ° C)} / (D hardness of the polishing pad in a dry state) is 0.1 to 0.3, more preferably 0.15 to 0.25, and the following formula (II): (The storage elastic modulus of the polishing pad in a dry state) - (the storage elastic modulus of the polishing pad saturated with warm water at 40 ° C)} / (the storage elastic modulus of the polishing pad in a dry state) is 0.4~ 0.9, more preferably 0.6~0.85.

本發明者等人發現藉由將上述式(I)及(II)之值限定於特定範圍內,能夠提高研磨墊之研磨特性。上述式(I)之數值範圍意味著濕潤時之研磨墊之D硬度較乾燥時降低10~30%,上述式(II)之數值範圍意味著濕潤時之研磨墊之儲存彈性模數較乾燥時降低40~90%。即,本發明之研磨墊在研磨溫度達到40℃時,表面之硬度及彈性模數降低,以不會產生成為刮痕等之原因之狀態的方式變形,但由於變形限於研磨墊之表面,因此研磨墊整體之硬度及彈性模數不會過度降低而無法獲得所需之平坦性或研磨速率。 The inventors of the present invention have found that the polishing properties of the polishing pad can be improved by limiting the values of the above formulas (I) and (II) to a specific range. The numerical range of the above formula (I) means that the D hardness of the polishing pad when wet is reduced by 10 to 30% when dry, and the numerical range of the above formula (II) means that the storage elastic modulus of the polishing pad when wet is relatively dry. Reduce 40~90%. In other words, when the polishing temperature of the polishing pad of the present invention reaches 40° C., the hardness and the modulus of elasticity of the surface are lowered, and the film is deformed so as not to cause scratches or the like. However, since the deformation is limited to the surface of the polishing pad, the polishing pad is limited to the surface of the polishing pad. The hardness and modulus of elasticity of the polishing pad as a whole are not excessively lowered to obtain the desired flatness or polishing rate.

又,本發明之研磨層之氣泡為獨立氣泡,氣泡彼此並未連通,故即便將研磨層表面暴露於水中,水亦不會通過氣泡滲透至研磨層之內部,可維持內部之乾燥狀態。 Further, since the bubbles of the polishing layer of the present invention are independent bubbles and the bubbles are not in communication with each other, even if the surface of the polishing layer is exposed to water, water does not permeate into the inside of the polishing layer through the bubbles, and the internal dry state can be maintained.

本發明之研磨墊之另一態樣之特徵在於:研磨層係使包含多異氰酸酯化合物、多元醇化合物、含有3,3'-二氯-4,4'-二胺基二苯基甲烷(以下有時稱為「MOCA」)之硬化劑、及微小中空球體之聚胺基甲酸酯樹脂硬化性組合物硬化而形成,以上述硬化劑之總量為100重量%計,包含上述式之四聚物3~10重量%,較佳為包含4~8重量%,更佳 為包含5~7重量%。MOCA之化學結構為 四聚物之化學結構為 Another aspect of the polishing pad of the present invention is characterized in that the polishing layer comprises a polyisocyanate compound, a polyol compound, and 3,3'-dichloro-4,4'-diaminodiphenylmethane (hereinafter The hardening agent called "MOCA" and the polyurethane resin curable composition of the micro hollow spheres are formed by curing, and the total amount of the curing agent is 100% by weight, and the fourth formula is included. The polymer is 3 to 10% by weight, preferably 4 to 8% by weight, more preferably 5 to 7% by weight. The chemical structure of MOCA is The chemical structure of the tetramer is

四聚物係一分子內具有四個胺基之反應基之化合物,四個胺基之反應性依序降低,第一個>第二個>第三個>第四個。故而,四聚物之反應性比一分子內具有兩個胺基之MOCA(3,3'-二氯-4,4'-二胺基二苯基甲烷)溫和。於使用含有較多四聚物之硬化劑之情形時,第四個胺基之反應性由於反應性降低或空間位阻亦可能不發生反應,認為係所得硬化體之耐熱性降低(成為樹脂易軟化之傾向)者。 A tetramer is a compound having a reactive group of four amine groups in one molecule, and the reactivity of the four amine groups is sequentially lowered, the first > the second > the third > the fourth. Therefore, the reactivity of the tetramer is milder than that of MOCA (3,3'-dichloro-4,4'-diaminodiphenylmethane) having two amine groups in one molecule. When a hardener containing a large amount of tetramer is used, the reactivity of the fourth amine group may not be reacted due to a decrease in reactivity or steric hindrance, and it is considered that the heat resistance of the obtained hardened body is lowered (it becomes a resin easy) The tendency to soften).

本發明之研磨墊之進而另一態樣之特徵在於:研磨層係使包含多異氰酸酯化合物、多元醇化合物、硬化劑、及微小中空球體之聚胺 基甲酸酯樹脂硬化性組合物硬化而形成,且至少具有濕潤研磨時軟化之表層部。 A further aspect of the polishing pad of the present invention is characterized in that the polishing layer is a polyamine comprising a polyisocyanate compound, a polyol compound, a hardener, and a micro hollow sphere. The urethane resin curable composition is formed by curing, and at least has a surface layer portion which softens during wet polishing.

有關該特徵性之表層部,較佳為該表層部之厚度為50μm以下,尤其是較佳為表層部之厚度小於微小中空球體之直徑。 In the surface layer portion of the characteristic, it is preferable that the thickness of the surface layer portion is 50 μm or less, and it is particularly preferable that the thickness of the surface layer portion is smaller than the diameter of the minute hollow sphere.

請參照本案隨附圖式及後述之實施例。於利用熱機械分析法(TMA)進行之針入試驗中,於本發明之實施例中,可確認第1段之針入溫度為50~100℃、第2段之針入溫度為150℃以上之2階段針入。第1段之針入時之針入深度為50μm以下,但實施例中所使用之微小中空球體之直徑為約55μm,因而能夠理解第1段之針入時之針入深度不受針使微小中空球體移動或變形之影響。另一方面,比較例之研磨墊未顯示2階段之針入溫度而僅顯示超過150℃之1階段針入溫度。 Please refer to the accompanying drawings and the embodiments described below. In the needle insertion test by the thermomechanical analysis method (TMA), in the examples of the present invention, it can be confirmed that the needle insertion temperature of the first stage is 50 to 100 ° C, and the needle insertion temperature of the second stage is 150 ° C or more. The 2 stages are inserted. In the first stage, the penetration depth is 50 μm or less, but the diameter of the micro hollow sphere used in the embodiment is about 55 μm, so that it can be understood that the penetration depth of the first stage is not affected by the needle. The effect of movement or deformation of the hollow sphere. On the other hand, the polishing pad of the comparative example did not show the two-stage needle-in temperature and only showed the one-stage needle-in temperature exceeding 150 °C.

即,本發明之研磨墊在研磨溫度達到40℃時,表面開始軟化,但研磨墊整體未軟化而維持平坦性。因此,表面係以不產生研磨時成為刮痕等之原因之狀態的方式發生軟化,但由於該軟化限於研磨墊之表面,因而研磨墊整體不會過度軟化以致無法獲得所需之平坦性或研磨速率。 That is, when the polishing temperature of the polishing pad of the present invention reaches 40 ° C, the surface starts to soften, but the entire polishing pad is not softened to maintain flatness. Therefore, the surface is softened so as not to cause scratches or the like during polishing. However, since the softening is limited to the surface of the polishing pad, the entire polishing pad is not excessively softened so that the desired flatness or polishing cannot be obtained. rate.

(研磨墊之製造方法) (Method of manufacturing polishing pad)

本發明之研磨墊能夠藉由一般已知之模鑄成形、板坯成形等製造法而製造。首先,藉由該等製造法形成聚胺基甲酸酯塊體,將塊體藉由切片等製成片狀,成形包含聚胺基甲酸酯樹脂之研磨層,並貼合於支持體等而製造。或者直接於支持體上成形研磨層也可。 The polishing pad of the present invention can be produced by a conventionally known production method such as die casting or slab forming. First, a polyurethane block is formed by the above-described production methods, and the block is formed into a sheet shape by slicing or the like, and a polishing layer containing a polyurethane resin is formed and bonded to a support or the like. And manufacturing. Alternatively, the abrasive layer may be formed directly on the support.

更具體而言,研磨層係於研磨層之與研磨面相反之面側貼附雙面膠帶並切割為特定形狀而成為本發明之研磨墊。雙面膠帶並無特別限制,可自本技術領域中公知之雙面膠帶中任意地選擇使用。又,本發明之研磨墊既可為僅由研磨層構成之單層結構,亦可包括於研磨層之與研磨面相反之面側貼合有其他層(下層、支持層)之複層。 More specifically, the polishing layer is a polishing pad of the present invention in which a double-sided tape is attached to a side of the polishing layer opposite to the polishing surface and cut into a specific shape. The double-sided tape is not particularly limited and can be arbitrarily selected from the double-sided tape known in the art. Further, the polishing pad of the present invention may be a single layer structure composed only of a polishing layer, or may be a composite layer in which another layer (lower layer, support layer) is bonded to the surface of the polishing layer opposite to the polishing surface.

研磨層係藉由製備包含多異氰酸酯化合物及多元醇化合物之聚胺基甲酸酯樹脂硬化性組合物,使上述聚胺基甲酸酯樹脂硬化性組合物硬化而成形。 The polishing layer is formed by curing a polyurethane resin curable composition containing a polyisocyanate compound and a polyol compound, and curing the polyurethane resin curable composition.

研磨層包含發泡聚胺基甲酸酯樹脂,能夠將包含微小中空球體之發泡劑分散於聚胺基甲酸酯樹脂中進行發泡,於此情形時,藉由製備包含多異氰酸酯化合物、多元醇化合物、及發泡劑之聚胺基甲酸酯樹脂發泡硬化性組合物,使聚胺基甲酸酯樹脂發泡硬化性組合物發泡硬化而成形。 The polishing layer contains a foamed polyurethane resin, and the foaming agent containing the micro hollow spheres can be dispersed in the polyurethane resin for foaming, in which case, by preparing a polyisocyanate compound, The polyurethane compound foaming curable composition of the polyol compound and the foaming agent is formed by foaming and curing the polyurethane resin foaming curable composition.

聚胺基甲酸酯樹脂硬化性組合物例如亦可設為將包含多異氰酸酯化合物之A液及包含其以外之成分之B液混合而製備之2液型之組合物。可將包含其以外之成分之B液進一步分成複數種液體,設為混合3種以上之液體而構成之組合物。 The polyurethane curable composition may be, for example, a two-liquid type composition obtained by mixing a liquid A containing a polyisocyanate compound and a liquid B containing a component other than the polyisocyanate compound. The liquid B containing the components other than the above may be further divided into a plurality of liquids, and a composition comprising three or more liquids may be mixed.

多異氰酸酯化合物亦可包含業界常用之藉由多異氰酸酯化合物與多元醇化合物之反應而製備之預聚物。預聚物係包含未反應之異氰酸酯基之於業界中普遍地使用者,亦能夠於本發明中使用。 The polyisocyanate compound may also comprise a prepolymer prepared by the reaction of a polyisocyanate compound and a polyol compound which is commonly used in the industry. Prepolymers containing unreacted isocyanate groups are commonly used by users in the industry and can also be used in the present invention.

(異氰酸酯成分) (isocyanate component)

作為異氰酸酯成分,例如可列舉:間苯二異氰酸酯、對苯二異氰酸酯、2,6-甲苯二異氰酸酯(2,6-TDI)、2,4-甲苯二異氰酸酯(2,4-TDI)、萘-1,4-二異氰酸酯、二苯基甲烷-4,4'-二異氰酸酯(MDI)、4,4'-亞甲基-雙(環己基異氰酸酯)(氫化MDI)、3,3'-二甲氧基-4,4'-聯苯二異氰酸酯、3,3'-二甲基二苯基甲烷-4,4'-二異氰酸酯、 二甲苯-1,4-二異氰酸酯、4,4'-二苯基丙烷二異氰酸酯、三亞甲基二異氰酸酯、六亞甲基二異氰酸酯、伸丙基-1,2-二異氰酸酯、伸丁基-1,2-二異氰酸酯、伸環己基-1,2-二異氰酸酯、伸環己基-1,4-二異氰酸酯、對苯二異硫氰酸酯、二甲苯-1,4-二異硫氰酸酯、次乙基二異硫氰酸酯等。 Examples of the isocyanate component include m-phenylene diisocyanate, p-phenylene diisocyanate, 2,6-toluene diisocyanate (2,6-TDI), 2,4-toluene diisocyanate (2,4-TDI), and naphthalene- 1,4-Diisocyanate, Diphenylmethane-4,4'-diisocyanate (MDI), 4,4'-Methylene-bis(cyclohexyl isocyanate) (hydrogenated MDI), 3,3'-dimethyl Oxy-4,4'-biphenyl diisocyanate, 3,3'-dimethyldiphenylmethane-4,4'-diisocyanate, Xylene-1,4-diisocyanate, 4,4'-diphenylpropane diisocyanate, trimethylene diisocyanate, hexamethylene diisocyanate, propyl-1,2-diisocyanate, butyl-butyl- 1,2-diisocyanate, cyclohexyl-1,2-diisocyanate, cyclohexyl-1,4-diisocyanate, p-phenylene isothiocyanate, xylene-1,4-diisothiocyanate Ester, hypoethyl diisothiocyanate, and the like.

(多元醇成分) (polyol component)

作為多元醇成分,例如可列舉:乙二醇、二乙二醇、三乙二醇、1,2-丙二醇、1,3-丙二醇、1,3-丁二醇、1,4-丁二醇、新戊二醇、戊二醇、3-甲基-1,5-戊二醇、1,6-己二醇等二醇;聚四亞甲基二醇(PTMG)、聚乙二醇、聚丙二醇等聚醚多元醇;乙二醇與己二酸之反應物或丁二醇與己二酸之反應物等聚酯多元醇;聚碳酸酯多元醇;聚己內酯多元醇;等。 Examples of the polyol component include ethylene glycol, diethylene glycol, triethylene glycol, 1,2-propylene glycol, 1,3-propanediol, 1,3-butylene glycol, and 1,4-butanediol. , neopentyl glycol, pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol and other glycols; polytetramethylene glycol (PTMG), polyethylene glycol, a polyether polyol such as polypropylene glycol; a polyester polyol such as a reaction product of ethylene glycol with adipic acid or a reaction product of butanediol and adipic acid; a polycarbonate polyol; a polycaprolactone polyol;

(硬化劑) (hardener)

硬化劑係於將預聚物用作多異氰酸酯化合物之情形時,與預聚物中之異氰酸酯基反應,完成聚胺基甲酸酯樹脂之化合物。本發明 中,例如可例示以下所說明之硬化劑。 The hardener is a compound of a polyurethane resin which is reacted with an isocyanate group in the prepolymer when the prepolymer is used as a polyisocyanate compound. this invention Among them, for example, a curing agent described below can be exemplified.

用作硬化劑之多元醇與上述之多元醇成分相同。又,亦可使用三官能之甘油等三醇、四官能以上之多元醇。 The polyol used as the hardener is the same as the polyol component described above. Further, a triol or a trifunctional or higher polyhydric alcohol such as trifunctional glycerin may be used.

作為聚胺,例如可列舉二胺,對此可列舉:乙二胺、丙二胺、六亞甲基二胺等伸烷基二胺;異佛爾酮二胺、二環己基甲烷-4,4'-二胺等具有脂肪族環之二胺;3,3'-二氯-4,4'-二胺基二苯基甲烷(別名:亞甲基雙鄰氯苯胺)(以下簡稱為MOCA)等具有芳香族環之二胺;2-羥基乙基乙二胺、2-羥基乙基丙二胺、二-2-羥基乙基乙二胺、二-2-羥基乙基丙二胺、2-羥基丙基乙二胺、二-2-羥基丙基乙二胺等具有羥基之聚胺、特別是羥基烷基伸烷基二胺等。又,亦可使用三官能之三胺化合物、四官能以上之聚胺化合物。 Examples of the polyamine include a diamine, and examples thereof include an alkylenediamine such as ethylenediamine, propylenediamine, and hexamethylenediamine; isophoronediamine and dicyclohexylmethane-4. 4'-diamine or the like having an aliphatic ring; 3,3'-dichloro-4,4'-diaminodiphenylmethane (alias: methylene bis-o-chloroaniline) (hereinafter referred to as MOCA) a diamine having an aromatic ring; 2-hydroxyethylethylenediamine, 2-hydroxyethylpropylenediamine, di-2-hydroxyethylethylenediamine, di-2-hydroxyethylpropylenediamine, A polyamine having a hydroxyl group such as 2-hydroxypropylethylenediamine or di-2-hydroxypropylethylenediamine, particularly a hydroxyalkylalkylene diamine or the like. Further, a trifunctional triamine compound or a tetrafunctional or higher polyamine compound can also be used.

尤佳之硬化劑為前述之MOCA,該MOCA之化學結構如上所述。MOCA中,包含四聚物作為副產物,四聚物之化學結構如上所述。以硬化劑之總量為100重量%計,包含四聚物3~10重量%,較佳為包含4~8重量%,更佳為包含5~7重量%。 A particularly preferred hardener is the aforementioned MOCA, and the chemical structure of the MOCA is as described above. In MOCA, a tetramer is included as a by-product, and the chemical structure of the tetramer is as described above. The tetramer is contained in an amount of 3 to 10% by weight, preferably 4 to 8% by weight, and more preferably 5 to 7% by weight, based on 100% by weight of the total amount of the curing agent.

(發泡劑) (foaming agent)

能夠藉由將微小中空球體混合至聚胺基甲酸酯樹脂中而形成發泡體。所謂微小中空球體,係使含有包含熱塑性樹脂之外殼(聚合物殼)及內包於外殼之低沸點烴的未發泡之加熱膨脹性微小球狀體加熱膨脹而得者。作為上述聚合物殼,例如可使用丙烯腈-偏二氯乙烯共聚物、丙烯腈-甲基丙烯酸甲酯共聚物、氯乙烯-乙烯共聚物等熱塑性樹脂。同樣地,作為內包於聚合物殼之低沸點烴,例如可使用異丁烷、戊烷、異戊烷、石油醚等。 The foam can be formed by mixing a minute hollow sphere into a polyurethane resin. The micro hollow sphere is obtained by heating and expanding an unfoamed heat-expandable microsphere containing an outer shell (polymer shell) containing a thermoplastic resin and a low-boiling hydrocarbon contained in the outer shell. As the polymer shell, for example, a thermoplastic resin such as an acrylonitrile-vinylidene chloride copolymer, an acrylonitrile-methyl methacrylate copolymer, or a vinyl chloride-ethylene copolymer can be used. Similarly, as the low boiling point hydrocarbon encapsulated in the polymer shell, for example, isobutane, pentane, isopentane, petroleum ether or the like can be used.

(其他成分) (other ingredients)

此外,亦可將業界通常使用之觸媒等添加至發泡硬化性組合物中。 Further, a catalyst or the like which is generally used in the industry may be added to the foaming curable composition.

[實施例] [Examples]

對本發明藉由以下之例實驗地加以說明,但以下之說明並不意在將本發明之範圍限定於以下之例地進行解釋。 The present invention is experimentally illustrated by the following examples, but the following description is not intended to limit the scope of the invention to the following examples.

(材料) (material)

列舉以下之例中所使用之材料。 List the materials used in the following examples.

‧胺基甲酸酯預聚物之商品名: ‧The name of the urethane prepolymer:

UNIROYAL公司製造之ADIPRENE L325 ADIPRENE L325 manufactured by UNIROYAL

DIC公司製造之PANDEX C730 PANDEX C730 manufactured by DIC

三菱樹脂公司製造之NOVARETAN UP-127 NOVARETAN UP-127 manufactured by Mitsubishi Plastics Co., Ltd.

‧MOCA之商品名(任一者均含有少量上述四聚物): ‧The trade name of MOCA (either of which contains a small amount of the above tetramer):

DIC公司製造之PANDEX E、PANDEX E50 PANDEX E, PANDEX E50 manufactured by DIC

IHARA CHEMICAL公司製造之LM-52 Amine LM-52 Amine manufactured by IHARA CHEMICAL

‧中空微粒子之商品名: ‧The name of the hollow microparticles:

JAPAN FILLITE公司製造之EXPANCEL 551DE40d42 EXPANCEL 551DE40d42 manufactured by JAPAN FILLITE

松本油脂公司製造之MATSUMOTOMICROSPHERE F-80DE MATSUMOTOMICROSPHERE F-80DE manufactured by Matsumoto Oil Co., Ltd.

(實施例1) (Example 1)

分別準備:A成分:以甲苯二異氰酸酯為主成分之NCO當量460之胺基甲酸酯預聚物(PANDEX C730)100g(份)、B成分:將作為硬化劑之PANDEX E及PANDEX E50按照重量比1:1混合所得者(以硬化劑之重量為100重量%計,含有6.0重量%之四聚物)30.75g(份)、C成分:中空微粒子2.25g(份)(將EXPANCEL 551DE40d42及MATSUMOTOMICROSPHERE F-80DE按照4:1混合)。再者,為了表示比率,以g之表示進行記載,根據塊體之大小準備所需之重量(份)。以下同樣地以g(份)之表示進行記載。 Prepared separately: Component A: NCO equivalent 460 urethane prepolymer (PANDEX C730) with toluene diisocyanate as main component, 100 g (parts), component B: PANDEX E and PANDEX E50 as hardeners by weight The mixture obtained by mixing 1:1 (containing 6.0% by weight of the hardener, containing 6.0% by weight of tetramer) 30.75 g (parts), and C component: hollow fine particles 2.25 g (parts) (EXPANCEL 551DE40d42 and MATSUMOTOMICROSPHERE) F-80DE is mixed according to 4:1). In addition, in order to express the ratio, it is described by g, and the required weight (part) is prepared according to the size of a block. Hereinafter, the description will be made in the same manner as g (parts).

將A成分及B成分分別預先減壓消泡後,將A成分、B成分及C成分供給至混合機。 Each of the component A and the component B is defoamed under reduced pressure in advance, and then the component A, the component B, and the component C are supplied to the mixer.

將所得之混合液澆鑄至已加熱至80℃之模框(890mm×890mm之正方形)中,加熱5小時使之硬化後,自模框中取出所形成之樹脂發泡體。將該發泡體切片成1.3mm厚而製作胺基甲酸酯片材,獲得研磨墊。 The resulting mixture was cast into a mold frame (square of 890 mm × 890 mm) which had been heated to 80 ° C, and after heating for 5 hours to be hardened, the formed resin foam was taken out from the mold frame. The foam was cut into a thickness of 1.3 mm to prepare a urethane sheet, and a polishing pad was obtained.

(實施例2) (Example 2)

分別準備:A成分:以甲苯二異氰酸酯為主成分之NCO當量400之胺基甲酸酯預聚物(NOVARETAN UP-127)100g(份)、B成分:將作為硬化劑之PANDEX E及LM-52 Amine按照重量比7:3混合所得者(以硬化劑之重量為100重量%計,含有5.0重量%之四聚物)30.5g(份)、C成分:中空微粒子2.0g(份)(將EXPANCEL 551DE40d42及MATSUMOTOMICROSPHERE F-80DE按照4:1混合)。 Prepared separately: Component A: NCO equivalent of 400 urethane prepolymer (NOVARETAN UP-127) with toluene diisocyanate as main component, 100 g (parts), component B: PANDEX E and LM- as hardener 52 Amine mixed according to weight ratio of 7:3 (100% by weight of hardener, containing 5.0% by weight of tetramer) 30.5g (parts), C component: hollow microparticles 2.0g (parts) (will EXPANCEL 551DE40d42 and MATSUMOTOMICROSPHERE F-80DE are mixed according to 4:1).

之後,與實施例1同樣地製作胺基甲酸酯片材,獲得研磨墊。 Thereafter, a urethane sheet was produced in the same manner as in Example 1 to obtain a polishing pad.

(比較例1) (Comparative Example 1)

將Nitta Haas公司製造之研磨墊IC1000用作比較例。 A polishing pad IC1000 manufactured by Nitta Haas Co., Ltd. was used as a comparative example.

(比較例2) (Comparative Example 2)

分別準備:A成分:以甲苯二異氰酸酯為主成分之NCO當量460之胺基甲酸酯預聚物(ADIPRENE L325)100g(份)、B成分:作為硬化劑之PANDEX E(以硬化劑之重量為100重量%計,含有2.1重量%之四聚物)29.8g(份)、C成分:中空微粒子(EXPANCEL 551DE40d42)2.1g(份)。 Prepared separately: Component A: NCO equivalent 460 urethane prepolymer (ADIPRENE L325) with toluene diisocyanate as the main component, 100 g (parts), component B: PANDEX E as a hardener (based on the weight of the hardener) 100 wt%, containing 2.1 wt% of tetramer) 29.8 g (part), C component: hollow microparticles (EXPANCEL 551 DE40d42) 2.1 g (parts).

之後,與實施例1同樣地製造胺基甲酸酯片材,獲得研磨墊。 Thereafter, a urethane sheet was produced in the same manner as in Example 1 to obtain a polishing pad.

(比較例3) (Comparative Example 3)

分別準備:A成分:以甲苯二異氰酸酯為主成分之NCO當量460之胺基甲酸酯預聚物(PANDEX C730)100g(份)、B成分:作為硬化劑之IHARACUAMINE LM-52 Amine(以硬化劑之重量為100重量%計,含有11.8重量%之四聚物)31.0g(份)、C成分:中空微粒子 (EXPANCEL 551DE40d42)2.1g(份)。 Prepared separately: Component A: NCO equivalent 460 urethane prepolymer (PANDEX C730) with toluene diisocyanate as main component, 100 g (parts), component B: IHARACUAMINE LM-52 Amine as hardener (hardened) The weight of the agent is 100% by weight, containing 11.8% by weight of tetramer) 31.0 g (parts), and C component: hollow fine particles (EXPANCEL 551DE40d42) 2.1g (parts).

之後,與實施例1同樣地製造胺基甲酸酯片材,獲得研磨墊。 Thereafter, a urethane sheet was produced in the same manner as in Example 1 to obtain a polishing pad.

(硬度、儲存彈性模數E'、刮痕) (hardness, storage elastic modulus E', scratches)

D硬度係依照JIS K6253-1997/ISO 7619測定。 The D hardness is measured in accordance with JIS K6253-1997/ISO 7619.

儲存彈性模數E'(MPa)係藉由TA INSTRUMENTS JAPAN RSAIII,依照JIS K7244-4於初始負荷10g、形變範圍0.01~4%、測定頻率0.2Hz之條件下於40℃下測定。乾燥時及濕潤時均係於40℃下測定。 The storage elastic modulus E' (MPa) was measured by TA INSTRUMENTS JAPAN RSAIII at 40 ° C according to JIS K7244-4 under the conditions of an initial load of 10 g, a deformation range of 0.01 to 4%, and a measurement frequency of 0.2 Hz. It was measured at 40 ° C during drying and when wet.

研磨墊之乾燥狀態係定義為於20±2℃、濕度65±5%之條件下放置2小時以上之狀態,研磨墊之濕潤狀態係定義為於40℃±2之去離子水中浸漬1小時使之膨潤之狀態。 The dry state of the polishing pad is defined as being placed in a state of 20±2° C. and a humidity of 65±5% for 2 hours or more. The wet state of the polishing pad is defined as being immersed in deionized water of 40° C.±2 for 1 hour. The state of swelling.

刮痕等缺陷之評價係研磨25片基板,對研磨加工後之第21~25片之5片基板,利用晶圓表面檢查裝置(KLA TENCOR公司製造,Surfscan SP1DLS)之高感度測定模式進行測定,評價基板表面之刮痕等缺陷之個數。刮痕等缺陷之評價中,將於12英吋(300mm )晶圓中,0.16μm以上之缺陷未達200個記作○,將200個以上記作×。 The evaluation of the defects such as the scratches was performed by polishing the 25 substrates, and the five substrates of the 21st to 25th sheets after the polishing were measured by the high-sensitivity measurement mode of the wafer surface inspection device (Surfscan SP1DLS, manufactured by KLA TENCOR Co., Ltd.). The number of defects such as scratches on the surface of the substrate was evaluated. In the evaluation of defects such as scratches, it will be 12 inches (300mm) In the wafer, less than 200 defects of 0.16 μm or more are denoted by ○, and 200 or more are denoted by ×.

(研磨速率) (grinding rate)

研磨試驗之條件如下。 The conditions of the grinding test are as follows.

‧所使用之研磨機:荏原製作所公司製造,F-REX300 ‧ Grinding machine used: manufactured by Ebara Seisakusho Co., Ltd., F-REX300

‧研磨盤:3M A188(# 60) ‧ Grinding disc: 3M A188 (# 60)

‧轉數:(壓盤)70rpm、(頂環)71rpm ‧ number of revolutions: (platen) 70rpm, (top ring) 71rpm

‧研磨壓力:3.5psi ‧ Grinding pressure: 3.5psi

‧研磨劑:CABOT公司製造,產品編號:SS25(使用SS25原液:純水=1:1之混合液) ‧ Abrasive: manufactured by CABOT, product number: SS25 (using SS25 stock solution: pure water = 1:1 mixture)

‧研磨劑溫度:20℃ ‧Abrasant temperature: 20 ° C

‧研磨劑流出量:200ml/min ‧ Abrasive agent outflow: 200ml/min

‧所使用之工件(被研磨物):於12英吋矽晶圓上藉由PE-CVD(Plasma-Enhanced Chemical Vapor Deposition,電漿加強化學氣相沈積)以絕緣膜成為1μm之厚度之方式形成四乙氧基矽烷之基板 ‧Workpiece used (abrasive): at 12 inches A substrate of tetraethoxydecane is formed on the germanium wafer by PE-CVD (Plasma-Enhanced Chemical Vapor Deposition) to a thickness of 1 μm.

研磨過程中研磨墊表面溫度上升,自研磨之初期溫度20℃變成40~50℃。 During the polishing process, the surface temperature of the polishing pad rises, and the temperature from the initial temperature of the polishing to 20 ° C becomes 40 to 50 ° C.

(四聚物之分析條件) (analysing conditions of tetramer)

‧所使用之分析機:凝膠滲透層析儀L-7200(Hitachi) ‧ Analytical machine used: Gel Permeation Chromatograph L-7200 (Hitachi)

‧管柱:Ohpak KB-802.5(排除界限10000)2根串聯 ‧column: Ohpak KB-802.5 (excluding the limit 10000) 2 series

‧流動相:DMF(dimethyl formamide,二甲基甲醯胺) ‧Mobile phase: DMF (dimethyl formamide, dimethylformamide)

‧流速:0.4mL/min ‧Flow rate: 0.4mL/min

‧烘箱:60℃ ‧Oven: 60 ° C

‧檢測器:RI(Refractive Index,折射率)60℃ ‧Detector: RI (Refractive Index, refractive index) 60 ° C

‧試樣量:90μL ‧ Sample size: 90 μL

將以上之結果顯示於表1及表2中。 The above results are shown in Tables 1 and 2.

如表1所示,得知藉由將40℃下之濕潤時之D硬度及儲存彈性模數設定於特定之範圍內,於使用漿料之研磨作業中本發明之研磨墊之表面軟質化,該軟質化大為有助於研磨性能(刮痕發生率之降低、研 磨速率之提高)。 As shown in Table 1, it was found that the surface hardness of the polishing pad of the present invention was softened in the polishing operation using the slurry by setting the D hardness and the storage elastic modulus at the time of wetting at 40 ° C to a specific range. This softening greatly contributes to the polishing performance (reduction of scratch rate, research) Increase in grinding rate).

如表2所示,得知用作硬化劑之MOCA所含之四聚物之量大為有助於研磨性能(刮痕發生率之降低、研磨速率之提高)。 As shown in Table 2, it was found that the amount of the tetramer contained in the MOCA used as the curing agent greatly contributes to the polishing performance (reduction in scratch rate and improvement in polishing rate).

利用上述本發明之方法及新穎見解,能夠篩選包含MOCA之有用之硬化劑。 Using the methods and novel insights of the present invention described above, it is possible to screen for useful hardeners comprising MOCA.

(利用熱機械分析法(TMA)之針入試驗) (Injection test using thermomechanical analysis (TMA))

試驗之概要如圖1所示,將施加有一定負荷之針壓抵於研磨墊,測定針之溫度上升及針之插入深度。若針之溫度上升之同時研磨墊表面軟化,則針插入。 The outline of the test is shown in Fig. 1. A needle to which a certain load is applied is pressed against the polishing pad, and the temperature rise of the needle and the depth of insertion of the needle are measured. If the temperature of the needle rises while the surface of the polishing pad softens, the needle is inserted.

按照以下之條件進行。 Follow the conditions below.

測定裝置:TMA/Q400(TA INSTRUMENT製造)INTRACOOLER冷卻機 Measuring device: TMA/Q400 (manufactured by TA INSTRUMENT) INTRACOOLER cooler

測定方法:針入模式 Measuring method: needle insertion mode

探針直徑:1mm Probe diameter: 1mm

升溫速度:5℃/min Heating rate: 5 ° C / min

測定環境:氮氣(流量:50mL/min) Measurement environment: nitrogen (flow: 50mL/min)

測定負荷:50gf Measuring load: 50gf

試片尺寸:約5mm×約5mm×約1.5mm厚度 Test piece size: about 5mm × about 5mm × about 1.5mm thickness

測定方向:於厚度方向壓縮(針入) Measuring direction: compression in the thickness direction (needle in)

測定前處理:即將測定前,向試樣上滴加水(10μL) Pre-measurement treatment: water (10 μL) is added to the sample immediately before the measurement

將結果示於圖2~4。 The results are shown in Figures 2 to 4.

實施例1及2(圖2及圖3)中,針於50℃附近起暫且插入試樣中,其後片刻,針入深度大致達到一定值,針於150℃附近起再次插入試樣中。該結果表示:實施例1及2中,表層部及內側部於化學結構上存在差異,軟化溫度存在差異而反映出此情況。 In Examples 1 and 2 (Figs. 2 and 3), the needle was temporarily inserted into the sample at around 50 ° C, and after a while, the penetration depth was approximately constant, and the needle was reinserted into the sample at around 150 ° C. The results show that in Examples 1 and 2, the surface layer portion and the inner portion have differences in chemical structure, and the softening temperature is different to reflect this.

另一方面,比較例1(圖4)中,至180℃附近為止,針並未插入。認為表層部與內側部於化學結構上並無差異。 On the other hand, in Comparative Example 1 (Fig. 4), the needle was not inserted until the vicinity of 180 °C. It is considered that there is no difference in chemical structure between the surface layer portion and the inner portion.

將以上之結果顯示於表3中。 The above results are shown in Table 3.

第1段之針入溫度係定義為圖之曲線之反曲點,第2段之針入溫度係定義為相對於曲線之切線之斜率為1(=45°)之點。 The needle-in temperature of the first paragraph is defined as the inflection point of the graph of the graph, and the needle-in temperature of the second segment is defined as the point where the slope of the tangent to the curve is 1 (= 45°).

如表3所示,得知本發明之研磨墊藉由研磨時表面軟化,研磨性能提高(刮痕發生率降低、研磨速率提高)。 As shown in Table 3, it was found that the polishing pad of the present invention softens the surface by polishing, and the polishing performance is improved (the scratch rate is lowered and the polishing rate is increased).

Claims (9)

一種研磨墊,其特徵在於:其係具有包含聚胺基甲酸酯樹脂之研磨層者,上述研磨層係使包含多異氰酸酯化合物、多元醇化合物、硬化劑、及微小中空球體之聚胺基甲酸酯樹脂硬化性組合物硬化而形成,且下述式:{(乾燥狀態之研磨墊之D硬度)-(經40℃之溫水飽和膨潤之研磨墊之D硬度)}/(乾燥狀態之研磨墊之D硬度)之值為0.1~0.3,下述式:{(乾燥狀態之研磨墊之儲存彈性模數)-(經40℃之溫水飽和膨潤之研磨墊之儲存彈性模數)}/(乾燥狀態之研磨墊之儲存彈性模數)之值為0.4~0.7。 A polishing pad characterized in that it has an abrasive layer comprising a polyurethane resin, and the polishing layer is a polyamine group containing a polyisocyanate compound, a polyol compound, a hardener, and a micro hollow sphere. The acid ester resin curable composition is formed by curing, and has the following formula: {(D hardness of the polishing pad in a dry state) - (D hardness of the polishing pad which is swollen by warm water at 40 ° C)} / (dry state) The D hardness of the polishing pad is 0.1 to 0.3, and the following formula: {(the storage elastic modulus of the polishing pad in a dry state) - (the storage elastic modulus of the polishing pad saturated with warm water at 40 ° C)} / (The storage elastic modulus of the polishing pad in a dry state) has a value of 0.4 to 0.7. 一種研磨墊,其特徵在於:其係具有包含聚胺基甲酸酯樹脂之研磨層者,上述研磨層係使包含多異氰酸酯化合物、多元醇化合物、含有3,3'-二氯-4,4'-二胺基二苯基甲烷之硬化劑、及微小中空球體之聚胺基甲酸酯樹脂硬化性組合物硬化而形成,且上述3,3'-二氯-4,4'-二胺基二苯基甲烷包含3~10重量%之四聚物。 A polishing pad characterized by comprising a polishing layer comprising a polyurethane resin, the polishing layer comprising a polyisocyanate compound, a polyol compound, and a 3,3'-dichloro-4,4 The hardening agent of '-diaminodiphenylmethane and the hardening composition of the micro hollow spheres are formed by hardening, and the above 3,3'-dichloro-4,4'-diamine The diphenylmethane contains 3 to 10% by weight of a tetramer. 一種研磨墊,其特徵在於:其係具有包含聚胺基甲酸酯樹脂之研磨層者,上述研磨層係使包含多異氰酸酯化合物、多元醇化合物、硬 化劑、及微小中空球體之聚胺基甲酸酯樹脂硬化性組合物硬化而形成,且至少具有於濕潤研磨時軟化之表層部。 A polishing pad characterized by comprising a polishing layer comprising a polyurethane resin, wherein the polishing layer comprises a polyisocyanate compound, a polyol compound, and a hard The chemical agent and the urethane composition of the micro hollow spheres are formed by curing, and at least have a surface layer portion which softens during wet grinding. 如請求項3之研磨墊,其中表層部之厚度為50μm以下。 The polishing pad of claim 3, wherein the thickness of the surface portion is 50 μm or less. 如請求項3之研磨墊,其中表層部之厚度小於微小中空球體之直徑。 The polishing pad of claim 3, wherein the thickness of the surface portion is smaller than the diameter of the minute hollow sphere. 如請求項3之研磨墊,其中於利用熱機械分析法(TMA)進行之針入試驗中,第1段之針入溫度為50~100℃,第2段之針入溫度為150℃以上。 The polishing pad of claim 3, wherein in the needle insertion test by thermomechanical analysis (TMA), the needle insertion temperature of the first stage is 50 to 100 ° C, and the needle insertion temperature of the second stage is 150 ° C or more. 如請求項1至6中任一項之研磨墊,其中多異氰酸酯化合物及多元醇化合物包含藉由多異氰酸酯化合物與多元醇化合物之反應而製備之預聚物。 The polishing pad according to any one of claims 1 to 6, wherein the polyisocyanate compound and the polyol compound comprise a prepolymer prepared by reacting a polyisocyanate compound with a polyol compound. 一種研磨方法,其特徵在於:其係研磨光學材料或半導體材料之表面之方法,且使用如請求項1至6中任一項之研磨墊。 A method of grinding, which is a method of grinding a surface of an optical material or a semiconductor material, and using the polishing pad of any one of claims 1 to 6. 一種減少研磨光學材料或半導體材料之表面時之刮痕之方法,其係使用如請求項1至6中任一項之研磨墊來減少研磨光學材料或半導體材料之表面時之刮痕。 A method of reducing scratches when polishing an optical material or a surface of a semiconductor material, using the polishing pad according to any one of claims 1 to 6 to reduce scratches when polishing the surface of the optical material or the semiconductor material.
TW105100600A 2015-04-03 2016-01-08 Abrasive pad TWI669360B (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2015-076928 2015-04-03
JP2015-076926 2015-04-03
JP2015-076938 2015-04-03
JP2015076926A JP6498498B2 (en) 2015-04-03 2015-04-03 Polishing pad
JP2015076928A JP6513455B2 (en) 2015-04-03 2015-04-03 Polishing pad
JP2015076938A JP2016196067A (en) 2015-04-03 2015-04-03 Polishing pad

Publications (2)

Publication Number Publication Date
TW201636406A true TW201636406A (en) 2016-10-16
TWI669360B TWI669360B (en) 2019-08-21

Family

ID=57847581

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105100600A TWI669360B (en) 2015-04-03 2016-01-08 Abrasive pad

Country Status (1)

Country Link
TW (1) TWI669360B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI790295B (en) * 2017-10-11 2023-01-21 日商富士紡控股股份有限公司 Polishing pad and method for manufacturing polishing pad
CN116745333A (en) * 2021-01-29 2023-09-12 国立大学法人鹿儿岛大学 New type of tiny hollow particles made of melamine-based resin
US12503575B2 (en) 2021-01-29 2025-12-23 Kagoshima University Fine hollow particles comprising melamine-based resin

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4959901B2 (en) * 2000-05-27 2012-06-27 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド Polishing pad with groove for chemical mechanical planarization

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI790295B (en) * 2017-10-11 2023-01-21 日商富士紡控股股份有限公司 Polishing pad and method for manufacturing polishing pad
CN116745333A (en) * 2021-01-29 2023-09-12 国立大学法人鹿儿岛大学 New type of tiny hollow particles made of melamine-based resin
US12503575B2 (en) 2021-01-29 2025-12-23 Kagoshima University Fine hollow particles comprising melamine-based resin

Also Published As

Publication number Publication date
TWI669360B (en) 2019-08-21

Similar Documents

Publication Publication Date Title
KR102302626B1 (en) Polishing pad and process for producing same
JP6311183B2 (en) Polishing pad and manufacturing method thereof
JP6600149B2 (en) Polishing pad and manufacturing method thereof
TWI806994B (en) Polishing pad and manufacturing method thereof
TW201704340A (en) Polishing pad and process for producing same which is applied to chemical mechanical polishing and having high flatness and low polishing damage
JP7405500B2 (en) Polishing pad, method for manufacturing polishing pad, and method for polishing the surface of optical or semiconductor material
TWI669360B (en) Abrasive pad
TWI833924B (en) Polishing pads, methods for polishing the surface of optical materials or semiconductor materials, and methods for reducing scratches when polishing the surface of optical materials or semiconductor materials
KR102587715B1 (en) Polishing pad and method of manufacturing the same
TWI833693B (en) Polishing pad, manufacturing method of polishing pad, method of polishing the surface of optical material or semiconductor material, and method of reducing scratches when polishing the surface of optical material or semiconductor material
JP6382659B2 (en) Polishing pad
JP2019063903A (en) Polishing pad
JP2017185562A (en) Polishing method
JP6513455B2 (en) Polishing pad
JP6498498B2 (en) Polishing pad
JP2017185563A (en) Polishing pad
WO2019188476A1 (en) Polishing pad, polishing pad production method, and method for polishing surface of optical material or semiconductor material
JP2019177456A (en) Polishing pad, polishing pad manufacturing method, and method for polishing surface of optical material or semiconductor material
JP2017064891A (en) Polishing pad
JP2016196067A (en) Polishing pad
JP2019034385A (en) Polishing pad
JP6695197B2 (en) Polishing pad
JP2019177455A (en) Polishing pad, polishing pad manufacturing method, and method for polishing surface of optical material or semiconductor material