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TW201613114A - Method and apparatus for structuring the topside and underside of a semiconductor substrate - Google Patents

Method and apparatus for structuring the topside and underside of a semiconductor substrate

Info

Publication number
TW201613114A
TW201613114A TW104123513A TW104123513A TW201613114A TW 201613114 A TW201613114 A TW 201613114A TW 104123513 A TW104123513 A TW 104123513A TW 104123513 A TW104123513 A TW 104123513A TW 201613114 A TW201613114 A TW 201613114A
Authority
TW
Taiwan
Prior art keywords
structuring
semiconductor substrate
topside
underside
texturing
Prior art date
Application number
TW104123513A
Other languages
English (en)
Inventor
Anne-Kristin Volk
Maxi Richter
Martin Zimmer
Tobias Dannenberg
Umit Seyhan
Original Assignee
Fraunhofer Ges Forschung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Ges Forschung filed Critical Fraunhofer Ges Forschung
Publication of TW201613114A publication Critical patent/TW201613114A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H10P72/0424—
    • H10P72/0426—
    • H10P72/3314—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW104123513A 2014-07-21 2015-07-21 Method and apparatus for structuring the topside and underside of a semiconductor substrate TW201613114A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102014110222.3A DE102014110222B4 (de) 2014-07-21 2014-07-21 Verfahren und Vorrichtung zur Strukturierung von Ober- und Unterseite eines Halbleitersubstrats

Publications (1)

Publication Number Publication Date
TW201613114A true TW201613114A (en) 2016-04-01

Family

ID=53718000

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104123513A TW201613114A (en) 2014-07-21 2015-07-21 Method and apparatus for structuring the topside and underside of a semiconductor substrate

Country Status (3)

Country Link
DE (1) DE102014110222B4 (zh)
TW (1) TW201613114A (zh)
WO (1) WO2016012405A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI801516B (zh) * 2018-03-12 2023-05-11 日商東京威力科創股份有限公司 基板之翹曲修正方法、電腦記錄媒體及基板之翹曲修正裝置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208433367U (zh) * 2017-04-13 2019-01-25 Rct解决方法有限责任公司 用于化学处理半导体衬底的设备
DE102017206455A1 (de) 2017-04-13 2018-10-18 Rct Solutions Gmbh Verfahren und Vorrichtung zur chemischen Bearbeitung eines Halbleiter-Substrats
CN114496766A (zh) * 2020-10-26 2022-05-13 苏州易益新能源科技有限公司 一种水平连续腐蚀晶体硅片上表面的方法和设备
CN114496767A (zh) * 2020-10-26 2022-05-13 苏州易益新能源科技有限公司 一种碱溶液水平连续腐蚀晶体硅片的方法和设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10313127B4 (de) * 2003-03-24 2006-10-12 Rena Sondermaschinen Gmbh Verfahren zur Behandlung von Substratoberflächen
DE20321702U1 (de) * 2003-05-07 2008-12-24 Universität Konstanz Vorrichtung zum Texturieren von Oberflächen von Silizium-Scheiben
JP4945082B2 (ja) * 2005-03-01 2012-06-06 株式会社ケミトロン 薬液処理装置
DE102005057109A1 (de) * 2005-11-26 2007-05-31 Kunze-Concewitz, Horst, Dipl.-Phys. Vorrichtung und Verfahren für mechanisches Prozessieren flacher, dünner Substrate im Durchlaufverfahren
DE102005062527A1 (de) * 2005-12-16 2007-06-21 Gebr. Schmid Gmbh & Co. Vorrichtung und Verfahren zur Oberflächenbehandlung von Substraten
DE102007063202A1 (de) * 2007-12-19 2009-06-25 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung von Silizium-Wafern
US20100055398A1 (en) * 2008-08-29 2010-03-04 Evergreen Solar, Inc. Single-Sided Textured Sheet Wafer
DE102009060931A1 (de) * 2009-12-23 2011-06-30 Gebr. Schmid GmbH & Co., 72250 Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten
TWI523088B (zh) * 2010-02-11 2016-02-21 校際微電子中心 用於單側粗糙化之方法
WO2012020274A1 (en) * 2010-08-10 2012-02-16 Rena Gmbh Process and apparatus for texturizing a flat semiconductor substrate
DE102011050136A1 (de) * 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI801516B (zh) * 2018-03-12 2023-05-11 日商東京威力科創股份有限公司 基板之翹曲修正方法、電腦記錄媒體及基板之翹曲修正裝置

Also Published As

Publication number Publication date
WO2016012405A1 (de) 2016-01-28
DE102014110222A1 (de) 2016-01-21
DE102014110222B4 (de) 2016-06-23

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