TW201516126A - Conductive paste and substrate with conductive film - Google Patents
Conductive paste and substrate with conductive film Download PDFInfo
- Publication number
- TW201516126A TW201516126A TW103131043A TW103131043A TW201516126A TW 201516126 A TW201516126 A TW 201516126A TW 103131043 A TW103131043 A TW 103131043A TW 103131043 A TW103131043 A TW 103131043A TW 201516126 A TW201516126 A TW 201516126A
- Authority
- TW
- Taiwan
- Prior art keywords
- component
- conductive paste
- mass
- decane
- conductive
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 29
- 239000002245 particle Substances 0.000 claims abstract description 59
- -1 silane compound Chemical class 0.000 claims abstract description 46
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 23
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 16
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 13
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims description 57
- 239000011347 resin Substances 0.000 claims description 57
- 239000002923 metal particle Substances 0.000 claims description 52
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 41
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 36
- 229910052802 copper Inorganic materials 0.000 claims description 36
- 239000010949 copper Substances 0.000 claims description 36
- 239000011230 binding agent Substances 0.000 claims description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- 239000005011 phenolic resin Substances 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
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- 239000004332 silver Substances 0.000 claims description 5
- ANBBCZAIOXDZPV-UHFFFAOYSA-N 1,1,1-trimethoxy-2-methyldecane Chemical compound CC(C(OC)(OC)OC)CCCCCCCC ANBBCZAIOXDZPV-UHFFFAOYSA-N 0.000 claims description 4
- IIEWMRPKJCXTAD-UHFFFAOYSA-N 3-(trimethoxymethyl)undecane Chemical compound C(C)C(C(OC)(OC)OC)CCCCCCCC IIEWMRPKJCXTAD-UHFFFAOYSA-N 0.000 claims description 4
- DKCXIJLUMAOOHX-UHFFFAOYSA-N C(CCCCC)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(CCCCC)C(C(OC)(OC)OC)CCCCCCCC DKCXIJLUMAOOHX-UHFFFAOYSA-N 0.000 claims description 4
- IKEVUICGDJISMI-UHFFFAOYSA-N C(CCCCCCCCC)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(CCCCCCCCC)C(C(OC)(OC)OC)CCCCCCCC IKEVUICGDJISMI-UHFFFAOYSA-N 0.000 claims description 4
- CRGCAWOGRIKNFP-UHFFFAOYSA-N C(CCCCCCCCC)CCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C(CCCCCCCCC)CCC(C(OC)(OC)OC)CCCCCCCC CRGCAWOGRIKNFP-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- OHEJQMYOWUSLBR-UHFFFAOYSA-N C(CCCCCC)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(CCCCCC)C(C(OC)(OC)OC)CCCCCCCC OHEJQMYOWUSLBR-UHFFFAOYSA-N 0.000 claims description 3
- HOFQRQXELQUTBZ-UHFFFAOYSA-N C(CCCCCCCCC)CCCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C(CCCCCCCCC)CCCCC(C(OC)(OC)OC)CCCCCCCC HOFQRQXELQUTBZ-UHFFFAOYSA-N 0.000 claims description 3
- UMUVKMNHJFWLQT-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCC)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(CCCCCCCCCCCCCCCCC)C(C(OC)(OC)OC)CCCCCCCC UMUVKMNHJFWLQT-UHFFFAOYSA-N 0.000 claims description 3
- 239000004640 Melamine resin Substances 0.000 claims description 3
- 229920000877 Melamine resin Polymers 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
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- 239000008096 xylene Substances 0.000 claims description 3
- CWZQYRJRRHYJOI-UHFFFAOYSA-N 1,1,1-trimethoxydecane Chemical compound CCCCCCCCCC(OC)(OC)OC CWZQYRJRRHYJOI-UHFFFAOYSA-N 0.000 claims description 2
- GHTQBJZRHNNLIS-UHFFFAOYSA-N C(CCC)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(CCC)C(C(OC)(OC)OC)CCCCCCCC GHTQBJZRHNNLIS-UHFFFAOYSA-N 0.000 claims description 2
- CIXOHFJKMQCNDN-UHFFFAOYSA-N C(CCCCCCCCCCCCCC)C(C(OC)(OC)OC)CCCCCCC Chemical compound C(CCCCCCCCCCCCCC)C(C(OC)(OC)OC)CCCCCCC CIXOHFJKMQCNDN-UHFFFAOYSA-N 0.000 claims description 2
- DXQKRPJMNRDHBG-UHFFFAOYSA-N C(CCC)CCCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C(CCC)CCCCC(C(OC)(OC)OC)CCCCCCCC DXQKRPJMNRDHBG-UHFFFAOYSA-N 0.000 claims 1
- GPKLLIYYBSBWRW-UHFFFAOYSA-N C(CCCCCCCCC)CCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C(CCCCCCCCC)CCCC(C(OC)(OC)OC)CCCCCCCC GPKLLIYYBSBWRW-UHFFFAOYSA-N 0.000 claims 1
- UDPDWMBFPJCVBK-UHFFFAOYSA-N C(CCCCCCCCCC)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(CCCCCCCCCC)C(C(OC)(OC)OC)CCCCCCCC UDPDWMBFPJCVBK-UHFFFAOYSA-N 0.000 claims 1
- KBKCFABOCTXARN-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCC)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(CCCCCCCCCCCCCCCC)C(C(OC)(OC)OC)CCCCCCCC KBKCFABOCTXARN-UHFFFAOYSA-N 0.000 claims 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 23
- 239000000203 mixture Substances 0.000 abstract description 10
- 239000004840 adhesive resin Substances 0.000 abstract description 3
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- 229910000077 silane Inorganic materials 0.000 abstract 2
- 239000013528 metallic particle Substances 0.000 abstract 1
- 238000002156 mixing Methods 0.000 description 17
- 230000008859 change Effects 0.000 description 9
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 8
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- 150000001879 copper Chemical class 0.000 description 7
- 230000003993 interaction Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
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- GNPSQUCXOBDIDY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane Chemical compound C(CCCCCCC)C(C(OC)(OC)OC)CCC GNPSQUCXOBDIDY-UHFFFAOYSA-N 0.000 description 4
- 238000012935 Averaging Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
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- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
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- 238000007650 screen-printing Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- UUFZYMYWNWFTEO-UHFFFAOYSA-N SC(C(OC)(OC)OC)CCCCCCCC Chemical compound SC(C(OC)(OC)OC)CCCCCCCC UUFZYMYWNWFTEO-UHFFFAOYSA-N 0.000 description 2
- BYDOMSHLTRLAPK-UHFFFAOYSA-N SC(C(OC)(OC)S)CCCCCCCC Chemical compound SC(C(OC)(OC)S)CCCCCCCC BYDOMSHLTRLAPK-UHFFFAOYSA-N 0.000 description 2
- KDNNKAKZKYHACO-UHFFFAOYSA-N SC(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound SC(C(OCC)(OCC)OCC)CCCCCCCC KDNNKAKZKYHACO-UHFFFAOYSA-N 0.000 description 2
- XHBOVPXZMISXAL-UHFFFAOYSA-N SC(C(OCC)(OCC)S)CCCCCCCC Chemical compound SC(C(OCC)(OCC)S)CCCCCCCC XHBOVPXZMISXAL-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
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- LOLANUHFGPZTLQ-UHFFFAOYSA-N 1-ethoxydecane Chemical compound CCCCCCCCCCOCC LOLANUHFGPZTLQ-UHFFFAOYSA-N 0.000 description 1
- GCZWJRLXIPVNLU-UHFFFAOYSA-N 2,2-dimethoxy-3-methylundecane Chemical compound CC(C(OC)(OC)C)CCCCCCCC GCZWJRLXIPVNLU-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
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- ZKAPVLMBPUYKKP-UHFFFAOYSA-N 2-undecyloxirane Chemical compound CCCCCCCCCCCC1CO1 ZKAPVLMBPUYKKP-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- NUPJNQVNIZSKPF-UHFFFAOYSA-N 9-(triethoxymethyl)henicosane Chemical compound C(CCCCCCCCCCC)C(C(OCC)(OCC)OCC)CCCCCCCC NUPJNQVNIZSKPF-UHFFFAOYSA-N 0.000 description 1
- IZMVCSOUIXREHX-UHFFFAOYSA-N 9-(trimethoxymethyl)pentacosane Chemical compound C(CCCCCCCCCCCCCCC)C(C(OC)(OC)OC)CCCCCCCC IZMVCSOUIXREHX-UHFFFAOYSA-N 0.000 description 1
- GPQTVRGVXSWXPN-UHFFFAOYSA-N C(=O)(C(=C)C)C(CCCCCCCCC)CCCCCCCCCC Chemical compound C(=O)(C(=C)C)C(CCCCCCCCC)CCCCCCCCCC GPQTVRGVXSWXPN-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/02—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber
- B05D7/04—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber to surfaces of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
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- C—CHEMISTRY; METALLURGY
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Abstract
Description
本發明係關於一種導電性糊料及使用其之附導電膜之基材。 The present invention relates to a conductive paste and a substrate using the same.
自先前以來,已知有將含有導電性較高之金屬粒子之導電性糊料用於形成電子零件或印刷配線基板等配線導體之方法。其中,印刷配線基板之製造係以如下方式進行,即於絕緣基材上將導電性糊料塗佈為所需之圖案形狀並使之硬化,而形成具有配線圖案之導電膜。 A method of forming a wiring conductor such as an electronic component or a printed wiring board by using a conductive paste containing metal particles having high conductivity has been known. Among them, the printed wiring board is produced by applying a conductive paste to a desired pattern shape on an insulating substrate and curing it to form a conductive film having a wiring pattern.
以上述目的使用之導電性糊料應具備下述特性:(1)具有良好之導電性;(2)網版印刷、凹版印刷容易;(3)塗膜向絕緣基體上之密接性良好;(4)可形成細線電路;(5)向塗膜上之焊接性與焊接強度優異;及(6)可長期維持焊料塗佈電路之導電性等。 The conductive paste used for the above purpose should have the following characteristics: (1) good conductivity; (2) screen printing and gravure printing; (3) good adhesion of the coating film to the insulating substrate; 4) A thin wire circuit can be formed; (5) excellent weldability and weld strength to the coating film; and (6) electrical conductivity of the solder coating circuit can be maintained for a long period of time.
為了滿足該等特性,導電性糊料含有所需量之銅或銀等電阻值較低之金屬粒子、作為黏合劑樹脂之酚樹脂等熱硬化性樹脂、作為分散劑之飽和脂肪酸或不飽和脂肪酸之金屬鹽、及金屬螯合物形成劑(參照專利文獻1)。 In order to satisfy these characteristics, the conductive paste contains a metal oxide particle having a low resistance value such as copper or silver, a thermosetting resin such as a phenol resin as a binder resin, or a saturated fatty acid or an unsaturated fatty acid as a dispersing agent. The metal salt and the metal chelate forming agent (see Patent Document 1).
藉由上述構成之導電性糊料而形成導電膜,藉此可確保良好之導電性。然而,於撓性膜形成導電膜之情形時,存在如下問題點:所形成之導電膜與撓性膜之密接性較差,因此由於彎折而導致電子電路斷線從而有損導電性。 The conductive film is formed by the conductive paste having the above configuration, whereby good conductivity can be ensured. However, in the case where the conductive film is formed of a flexible film, there is a problem in that the formed conductive film and the flexible film are inferior in adhesion, and thus the electronic circuit is broken due to the bending, thereby impairing the conductivity.
於撓性膜形成電子電路之情形時,作為耐彎折性較高之導電性糊料,提出有含有金屬或碳等導電性粉末、及酸值為0.3~2.2 mgKOH/g之聚酯樹脂之導電性糊料組合物(參照專利文獻2)。 When a flexible film is formed into an electronic circuit, it is proposed to contain a conductive powder such as metal or carbon as a conductive paste having a high bending resistance, and an acid value of 0.3 to 2.2. A conductive paste composition of a polyester resin of mgKOH/g (refer to Patent Document 2).
然而,專利文獻2所記載之導電性糊料由於使用具有柔軟性質之熱塑性聚酯樹脂作為黏合劑樹脂,故而具有容易損傷而容易斷線之問題。 However, since the conductive paste described in Patent Document 2 uses a thermoplastic polyester resin having a soft property as a binder resin, it has a problem that it is easily damaged and easily broken.
又,於專利文獻3中揭示有一種導電性接著劑,其含有環氧樹脂、硬化劑、硬化促進劑、矽烷偶合劑、及導電性填料。於該導電性接著劑中,矽烷偶合劑具有改善導電性填料與樹脂之潤濕性、與被接著體之接著性的效果,且對獲得硬化物之耐濕性有效。 Further, Patent Document 3 discloses an electrically conductive adhesive comprising an epoxy resin, a curing agent, a curing accelerator, a decane coupling agent, and a conductive filler. In the conductive adhesive, the decane coupling agent has an effect of improving the wettability of the conductive filler and the resin and the adhesion to the adherend, and is effective for obtaining the moisture resistance of the cured product.
[專利文獻1]日本專利特開平5-212579號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 5-212579
[專利文獻2]日本專利特開2005-197226號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-197226
[專利文獻3]日本專利特開2009-1604號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2009-1604
因此,本發明之目的在於提供一種可形成於撓性膜形成電子電路之情形時具有一定耐彎折性之硬化膜的導電糊料。 Accordingly, it is an object of the present invention to provide a conductive paste which can be formed into a cured film having a certain bending resistance when a flexible film is formed into an electronic circuit.
為了達成上述目的,本發明提供一種導電性糊料,其特徵在於:其係含有(A)體積電阻值為10μΩ‧cm以下且平均粒徑為0.5~15μm之金屬粒子、(B)由Rx-Si-OR'4-x表示之矽烷化合物(式中,x為1~3之整數,R為以1~3個烷基之合計碳數為30以下作為條件之相互獨立且碳數為1~25之烷基,OR'為相互獨立且碳數為1~4之烷氧基)、及(C)包含以甲醛作為一成分之熱硬化性樹脂之黏合劑樹脂者,且相對於上述導電性糊料之全部成分之合計100質量份,含有上述(C)成分之黏合劑樹脂5~25質量份,且含有上述(B)成分之矽烷化合物0.01~2.5 質量份。 In order to achieve the above object, the present invention provides a conductive paste comprising (A) a metal particle having a volume resistance value of 10 μΩ··cm or less and an average particle diameter of 0.5 to 15 μm, and (B) by R x . -Si-OR' 4-x represents a decane compound (wherein x is an integer of 1 to 3, and R is independently a carbon number of 1 or more, and the carbon number is 1 or less. ~25 alkyl group, OR' is an alkoxy group independently of each other and having a carbon number of 1 to 4), and (C) a binder resin containing a thermosetting resin containing formaldehyde as a component, and is electrically conductive with respect to the above 100 parts by mass of the total of all the components of the paste, and 5 to 25 parts by mass of the binder resin containing the component (C), and 0.01 to 2.5 parts by mass of the decane compound containing the component (B).
於本發明之導電性糊料中,較佳為上述(A)成分之金屬粒子為平均粒徑為0.5~15μm之銅粒子或銀粒子。 In the conductive paste of the present invention, the metal particles of the component (A) are preferably copper particles or silver particles having an average particle diameter of 0.5 to 15 μm.
於本發明之導電性糊料中,較佳為上述(B)成分之矽烷化合物係選自由甲基三甲氧基矽烷、乙基三甲氧基矽烷、丙基三甲氧基矽烷、丁基三甲氧基矽烷、己基三甲氧基矽烷、庚基三甲氧基矽烷、辛基三甲氧基矽烷、壬基三甲氧基矽烷、癸基三甲氧基矽烷、十一烷基三甲氧基矽烷、十二烷基三甲氧基矽烷、十三烷基三甲氧基矽烷、十四烷基三甲氧基矽烷、十五烷基三甲氧基矽烷、十六烷基三甲氧基矽烷、十七烷基三甲氧基矽烷、十八烷基三甲氧基矽烷所組成之群中之1種以上。 In the conductive paste of the present invention, preferably, the decane compound of the above component (B) is selected from the group consisting of methyltrimethoxydecane, ethyltrimethoxydecane, propyltrimethoxydecane, and butyltrimethoxy. Decane, hexyltrimethoxydecane, heptyltrimethoxydecane, octyltrimethoxydecane, decyltrimethoxydecane,decyltrimethoxydecane,undecyltrimethoxydecane,dodecyltrimethyl Oxydecane, tridecyltrimethoxynonane, tetradecyltrimethoxynonane, pentadecyltrimethoxydecane,hexadecyltrimethoxynonane,heptadecyltrimethoxydecane, ten One or more of the group consisting of octadecyltrimethoxydecane.
於本發明之導電性糊料中,較佳為上述(C)成分之黏合劑樹脂係選自由酚樹脂、三聚氰胺樹脂、二甲苯樹脂、及脲樹脂所組成之群中之1種以上。 In the conductive paste of the present invention, the binder resin of the component (C) is preferably one or more selected from the group consisting of a phenol resin, a melamine resin, a xylene resin, and a urea resin.
又,本發明提供一種附導電膜之基材,其特徵在於:於基材上具有塗佈上述本發明之導電性糊料並使之硬化而成之導電膜。 Moreover, the present invention provides a substrate with a conductive film, comprising a conductive film obtained by applying the above-described conductive paste of the present invention and hardening the substrate.
於本發明之附導電膜之基材中,較佳為上述基材為撓性膜。 In the substrate with a conductive film of the present invention, it is preferred that the substrate be a flexible film.
根據本發明之導電糊料,可獲得具有較高之導電性,且具有一定耐彎折性之硬化膜。具體而言,初期之比電阻為50μΩcm以下,且依據下述實施例所記載之順序而測得的於彎折前後之比電阻之變化(增加)量(彎折次數5次)為400%以下。 According to the conductive paste of the present invention, a cured film having high conductivity and having a certain bending resistance can be obtained. Specifically, the initial specific resistance is 50 μΩcm or less, and the amount of change (increase) in the specific resistance before and after bending (the number of bending times is 5 times) measured in the order described in the following examples is 400% or less. .
又,藉由使用此種導電糊料,可獲得作為撓性膜配線基板等之可靠性較高,且由使用時之彎折引起之導電性之惡化得到抑制的附導電膜之基材。 In addition, by using such a conductive paste, it is possible to obtain a substrate with a conductive film which is highly reliable as a flexible film wiring board and which is excellent in deterioration of conductivity due to bending during use.
以下,對本發明之實施形態進行說明。再者,本發明並非限定於以下之說明而進行解釋者。 Hereinafter, embodiments of the present invention will be described. Furthermore, the present invention is not limited to the following description.
本發明之導電性糊料之特徵在於:其係含有(A)體積電阻值為10μΩ‧cm以下且平均粒徑為0.5~15μm之金屬粒子、(B)由Rx-Si-OR'4-x表示之矽烷化合物(式中,x為1~3之整數,R為以1~3個烷基之合計碳數為30以下作為條件之相互獨立且碳數為1~25之烷基,OR'為相互獨立且碳數為1~4之烷氧基)、及(C)包含以甲醛作為一成分之熱硬化性樹脂之黏合劑樹脂者,且相對於導電性糊料之全部成分之合計100質量份,含有(C)成分之黏合劑樹脂5~25質量份,且含有(B)成分之矽烷化合物0.01~2.5質量份。 The conductive paste of the present invention is characterized in that it contains (A) metal particles having a volume resistance value of 10 μΩ··cm or less and an average particle diameter of 0.5 to 15 μm, and (B) R x -Si-OR' 4- x is a decane compound (wherein x is an integer of 1 to 3, and R is an alkyl group having a carbon number of 1 to 25 as a condition of a total carbon number of 1 to 3 alkyl groups of 30 or less, OR 'Alkoxy group which is independent of each other and having a carbon number of 1 to 4, and (C) a binder resin containing a thermosetting resin containing formaldehyde as a component, and total of all components of the conductive paste 100 parts by mass of the binder resin containing the component (C) is 5 to 25 parts by mass, and the decane compound containing the component (B) is 0.01 to 2.5 parts by mass.
以下,對構成導電性糊料之各成分詳細地進行說明。 Hereinafter, each component constituting the conductive paste will be described in detail.
(A)成分之金屬粒子係導電性糊料之導電成分。 The metal particle of the component (A) is a conductive component of the conductive paste.
關於(A)成分之金屬粒子,要求導電性良好。於本發明中,使用體積電阻值為10μΩ‧cm以下之金屬粒子。 The metal particles of the component (A) are required to have good conductivity. In the present invention, metal particles having a volume resistance value of 10 μΩ··cm or less are used.
作為滿足上述要求之金屬,可列舉:金、銀、銅、鎳、鋁。該等中,就電阻值較低及獲取容易性等理由而言,較佳為銀、銅,就不易引起遷移現象而言,尤佳為銅。 Examples of the metal satisfying the above requirements include gold, silver, copper, nickel, and aluminum. Among these, in terms of a low resistance value and ease of acquisition, it is preferable that silver or copper is not easily caused to migrate, and copper is particularly preferable.
(A)成分之金屬粒子之基於下述定義之粒徑之平均值、即平均粒徑為0.5~15μm。 The metal particles of the component (A) are based on the average value of the particle diameters defined below, that is, the average particle diameter is 0.5 to 15 μm.
本說明書中之金屬粒子之粒徑係對自掃描式電子顯微鏡(以下,記為「SEM」)圖像中隨機選擇之100個金屬粒子之Feret徑進行測定,將各金屬粒子中之Feret徑成為最大值之徑向設為長軸,將與該長軸正 交之軸設為短軸時,算出該長軸方向之Feret徑與該短軸方向之Feret徑的平均值((長軸方向之Feret徑十短軸方向之Feret徑)/2)。 The particle diameter of the metal particles in the present specification is measured by the Feret diameter of 100 metal particles randomly selected from a scanning electron microscope (hereinafter referred to as "SEM") image, and the Feret diameter in each metal particle is The radial value of the maximum value is set to the long axis, and the long axis will be positive When the axis of intersection is a short axis, the average value of the Feret diameter in the long axis direction and the Feret diameter in the short axis direction ((Feret diameter in the short axis direction of the Feret diameter in the long axis direction)/2) is calculated.
再者,上述之所謂金屬粒子之粒徑,係金屬粒子之一次粒徑。 Further, the particle diameter of the above-mentioned metal particles is the primary particle diameter of the metal particles.
本說明書中之金屬粒子之粒徑之平均值(平均粒徑)係將藉由上述方式算出的金屬粒子之粒徑進行平均(數量平均)所得者。 The average value (average particle diameter) of the particle diameters of the metal particles in the present specification is obtained by averaging (quantitatively averaging) the particle diameters of the metal particles calculated as described above.
藉由(A)成分之金屬粒子之粒徑之平均值(平均粒徑)滿足上述範圍,而使含有金屬粒子之導電性糊料之流動特性變良好,從而藉由該導電性糊料而容易製作微細配線。若金屬粒子之粒徑之平均值(平均粒徑)未達0.5μm,則製成導電性糊料時,無法獲得充分之流動特性。另一方面,若金屬粒子之粒徑之平均值(平均粒徑)超過15μm,則有難以利用所獲得之導電性糊料製作微細配線之虞。 When the average value (average particle diameter) of the particle diameters of the metal particles of the component (A) satisfies the above range, the flow characteristics of the conductive paste containing the metal particles are improved, and the conductive paste is easily used. Make fine wiring. When the average value (average particle diameter) of the particle diameter of the metal particles is less than 0.5 μm, sufficient flow characteristics cannot be obtained when the conductive paste is formed. On the other hand, when the average value (average particle diameter) of the particle diameter of the metal particles exceeds 15 μm, it is difficult to produce fine wiring by using the obtained conductive paste.
(A)成分之金屬粒子之粒徑之平均值(平均粒徑)較佳為0.5~10μm,更佳為1~5μm。 The average value (average particle diameter) of the particle diameter of the metal particles of the component (A) is preferably from 0.5 to 10 μm, more preferably from 1 to 5 μm.
又,作為(A)成分之金屬粒子,亦可使用金屬粒子表面經還原處理之「表面改質金屬粒子」。表面改質金屬粒子藉由還原處理而粒子表面之氧濃度變低,因此金屬粒子間之接觸電阻變得更小,所獲得之導電膜之導電性提高。 Further, as the metal particles of the component (A), "surface-modified metal particles" having a surface treated with a metal particle may be used. Since the surface-modified metal particles have a low oxygen concentration on the surface of the particles by the reduction treatment, the contact resistance between the metal particles becomes smaller, and the conductivity of the obtained conductive film is improved.
於本發明之導電性糊料中,關於(A)成分之金屬粒子之調配量,相對於導電性糊料之全部成分之合計100質量份,較佳為75~95質量份,更佳為80~90質量份。若為75質量份以上,則使用導電性糊料而形成之導電膜之導電性變良好。若為95質量份以下,則金屬粒子與黏合劑樹脂結合之部分增加而使硬化膜之硬度提高,並且導電性糊料之流動特性變良好。 In the conductive paste of the present invention, the amount of the metal particles of the component (A) is preferably 75 to 95 parts by mass, more preferably 80 parts by mass based on 100 parts by mass of the total of all components of the conductive paste. ~90 parts by mass. When the amount is 75 parts by mass or more, the conductivity of the conductive film formed using the conductive paste is improved. When it is 95 parts by mass or less, the portion where the metal particles are bonded to the binder resin is increased to increase the hardness of the cured film, and the flow characteristics of the conductive paste are improved.
(B)成分之矽烷化合物係由下述式(1)表示。 The decane compound of the component (B) is represented by the following formula (1).
Rx-Si-OR'4-x (1) R x -Si-OR' 4-x (1)
式中,x為1~3之整數,R為以1~3個烷基之合計碳數為30以下作為條件之相互獨立且碳數為1~25之烷基,OR'為相互獨立且碳數為1~4之烷氧基。 In the formula, x is an integer of from 1 to 3, and R is an alkyl group having a carbon number of from 1 to 25 as a condition of a total of from 1 to 3 alkyl groups, and the OR' is independent of each other and carbon. The number is 1 to 4 alkoxy groups.
即,(B)成分之矽烷化合物中,鍵結於矽原子之4個官能基中1~3個官能基為碳數1~25之烷基,剩餘的3~1個官能基為碳數1~4之烷氧基。此處,於2個以上烷基鍵結於矽原子之情形時,該等烷基可相互相同,亦可不同。於2個以上烷氧基鍵結於矽原子之情形時,該等烷氧基可相互相同,亦可不同。 That is, in the decane compound of the component (B), one or three functional groups bonded to the four functional groups of the ruthenium atom are alkyl groups having 1 to 25 carbon atoms, and the remaining 3 to 1 functional groups are carbon number 1 ~4 alkoxy group. Here, when two or more alkyl groups are bonded to a ruthenium atom, the alkyl groups may be the same or different. When two or more alkoxy groups are bonded to a ruthenium atom, the alkoxy groups may be the same or different.
又,碳數1~25之烷基可為直鏈結構、或分支結構中之任一者。又,於烷氧基之碳數為3或4之情形時,亦可為直鏈結構、或分支結構中之任一者。 Further, the alkyl group having 1 to 25 carbon atoms may be either a linear structure or a branched structure. Further, in the case where the carbon number of the alkoxy group is 3 or 4, it may be either a linear structure or a branched structure.
於欲獲得較高之耐彎折性之情形時,可如專利文獻2所記載之導電性糊料般,使用聚酯樹脂等熱塑性樹脂作為黏合劑樹脂。 When it is desired to obtain a high bending resistance, a thermoplastic resin such as a polyester resin can be used as the binder resin as in the conductive paste described in Patent Document 2.
然而,於如專利文獻2所記載之導電性糊料般使用熱塑性樹脂作為黏合劑樹脂之情形時,具有容易損傷而容易斷線之問題。 However, when a thermoplastic resin is used as the binder resin as in the conductive paste described in Patent Document 2, there is a problem that it is easily damaged and easily broken.
因此,於欲獲得不易損傷之導電膜之情形時,可使用酚樹脂等熱硬化性樹脂作為黏合劑樹脂。然而,於使用熱硬化性樹脂作為黏合劑樹脂之情形時,有變得難以獲得耐彎折性之傾向。本案發明者等人推測其原因在於:若熱硬化性樹脂之硬化膜被進行彎折,則金屬粒子與黏合劑樹脂之間所產生之應力變大,而金屬粒子與黏合劑樹脂之界面被破壞,從而發生剝離。 Therefore, in the case of obtaining a conductive film which is not easily damaged, a thermosetting resin such as a phenol resin can be used as the binder resin. However, when a thermosetting resin is used as the binder resin, it tends to be difficult to obtain bending resistance. The inventors of the present invention have estimated that the reason is that if the cured film of the thermosetting resin is bent, the stress generated between the metal particles and the binder resin becomes large, and the interface between the metal particles and the binder resin is broken. So that peeling occurs.
相對於此,於本發明之導電性糊料中,藉由調配上述式(1)所表示之矽烷化合物作為(B)成分,而使導電性糊料中之金屬粒子與黏合劑樹脂形成適度之相互作用,緩和金屬粒子與黏合劑樹脂之間所產生之應力,從而使導電膜之耐彎折性提高。關於其原因,本案發明者等人推測如下。 On the other hand, in the conductive paste of the present invention, the decane compound represented by the above formula (1) is blended as the component (B), and the metal particles in the conductive paste and the binder resin are appropriately formed. The interaction moderates the stress generated between the metal particles and the binder resin, thereby improving the bending resistance of the conductive film. Regarding the reason, the inventors of the present invention and the like presume as follows.
關於(B)成分之矽烷化合物,烷氧基水解而成之矽烷醇部分與金屬粒子結合,另一方面,烷基與(C)成分之黏合劑樹脂形成相互作用。藉由該相互作用,金屬粒子可與黏合劑樹脂適度形成較強之結合。於下述實施例中,與未添加有(B)成分之矽烷化合物之例6相比,添加有(B)成分之矽烷化合物之例1~例5之硬化膜之楊氏模數變高,本案發明者推測其原因在於利用該相互作用之結合力。 With respect to the decane compound of the component (B), the stanol portion obtained by hydrolysis of the alkoxy group is bonded to the metal particles, and on the other hand, the alkyl group forms an interaction with the binder resin of the component (C). By this interaction, the metal particles can form a strong bond with the binder resin. In the following examples, the Young's modulus of the cured films of Examples 1 to 5 in which the decane compound of the component (B) was added was higher than that of Example 6 in which the decane compound of the component (B) was not added. The inventors of the present invention speculated that the reason was to utilize the binding force of the interaction.
然而,本案發明者等人推測,利用該相互作用之結合力弱於藉由如專利文獻3所記載之導電性糊料(導電性接著劑)般添加通常用以提高密接性之縮水甘油基矽烷或胺基矽烷、巰基矽烷、丙烯醯基矽烷、甲基丙烯醯基矽烷等矽烷偶合劑而獲得之結合力,於產生一定以上之應力之情形時,於金屬粒子與黏合劑樹脂之界面被破壞前緩和應力。 However, the inventors of the present invention have estimated that the binding force by the interaction is weaker than the addition of the glycidyl decane which is usually used to improve the adhesion by the conductive paste (conductive adhesive) described in Patent Document 3. The binding force obtained by a decane coupling agent such as amino decane, mercapto decane, acryl decyl decane or methacryl decyl decane is destroyed at the interface between the metal particles and the binder resin when a certain stress is generated. Relieve stress before.
其中,為了發揮上述作用,於(B)成分之矽烷化合物中,鍵結於矽原子之烷基之碳數必需為1~25,烷氧基之碳數必需為1~4。 In order to exhibit the above-described effects, in the decane compound of the component (B), the number of carbon atoms bonded to the alkyl group of the ruthenium atom must be 1 to 25, and the number of carbon atoms of the alkoxy group must be 1 to 4.
鍵結於矽原子之烷基之碳數為26以上之矽烷化合物難以獲取,即便於可獲取之情形時,亦變得難以確保作為導電性糊料之充分之流動性。 It is difficult to obtain a decane compound having a carbon number of 26 or more bonded to an alkyl group of a ruthenium atom, and it is difficult to ensure sufficient fluidity as a conductive paste even when it is available.
再者,於2個以上烷基鍵結於矽原子之情形時,烷基之合計碳數為30以下。若烷基之合計碳數為31以上,則變得難以確保作為導電性糊料之充分之流動性。 Further, when two or more alkyl groups are bonded to a ruthenium atom, the total carbon number of the alkyl group is 30 or less. When the total carbon number of the alkyl group is 31 or more, it becomes difficult to ensure sufficient fluidity as the conductive paste.
於(B)成分之矽烷化合物中,鍵結於矽原子之烷基之碳數較佳為1~23,更佳為1~20。 In the decane compound of the component (B), the carbon number of the alkyl group bonded to the ruthenium atom is preferably from 1 to 23, more preferably from 1 to 20.
烷基之合計碳數較佳為27以下,更佳為25以下。 The total carbon number of the alkyl group is preferably 27 or less, more preferably 25 or less.
另一方面,鍵結於矽原子之烷氧基之碳數較佳為1~3,更佳為1~2。 On the other hand, the number of carbon atoms bonded to the alkoxy group of the ruthenium atom is preferably from 1 to 3, more preferably from 1 to 2.
作為構成(B)成分之上述式(1)所表示之矽烷化合物,可列舉:甲 基三甲氧基矽烷、甲基三乙氧基矽烷、二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、二乙基二甲氧基矽烷、二乙基二乙氧基矽烷、丙基三甲氧基矽烷、丙基三乙氧基矽烷、二異丙基二甲氧基矽烷、二丁基二乙氧基矽烷、丁基三甲氧基矽烷、丁基三乙氧基矽烷、二丁基二甲氧基矽烷、庚基三甲氧基矽烷、庚基三乙氧基矽烷、二庚基二甲氧基矽烷、二庚基二乙氧基矽烷、己基三甲氧基矽烷、己基三乙氧基矽烷、二己基二甲氧基矽烷、二己基二乙氧基矽烷、辛基三甲氧基矽烷、辛基三乙氧基矽烷、二辛基二甲氧基矽烷、二辛基二乙氧基矽烷、壬基三甲氧基矽烷、壬基三乙氧基矽烷、二壬基二甲氧基矽烷、二壬基二乙氧基矽烷、癸基三甲氧基矽烷、癸基三乙氧基矽烷、二癸基二甲氧基矽烷、二癸基二乙氧基矽烷、十一烷基三甲氧基矽烷、十一烷基三乙氧基矽烷、二-十一烷基二甲氧基矽烷、二-十一烷基二乙氧基矽烷、十二烷基三甲氧基矽烷、十二烷基三乙氧基矽烷、二-十二烷基二甲氧基矽烷、二-十二烷基二乙氧基矽烷、十三烷基三甲氧基矽烷、十三烷基三乙氧基矽烷、二-十三烷基二甲氧基矽烷、二-十三烷基二乙氧基矽烷、十四烷基三甲氧基矽烷、十四烷基三乙氧基矽烷、二-十四烷基二甲氧基矽烷、二-十四烷基二乙氧基矽烷、十五烷基三甲氧基矽烷、十六烷基三甲氧基矽烷、十六烷基三乙氧基矽烷、十七烷基三甲氧基矽烷、十七烷基三乙氧基矽烷、十八烷基三甲氧基矽烷、十八烷基三乙氧基矽烷、十九烷基三甲氧基矽烷、十九烷基三乙氧基矽烷等。 The decane compound represented by the above formula (1) which constitutes the component (B) is exemplified by Trimethoxy decane, methyl triethoxy decane, dimethyl dimethoxy decane, dimethyl diethoxy decane, ethyl trimethoxy decane, ethyl triethoxy decane, diethyl Dimethoxydecane, diethyldiethoxydecane, propyltrimethoxydecane, propyltriethoxydecane, diisopropyldimethoxydecane, dibutyldiethoxydecane, butyl Trimethoxy decane, butyl triethoxy decane, dibutyl dimethoxy decane, heptyl trimethoxy decane, heptyl triethoxy decane, diheptyl dimethoxy decane, diheptyl Diethoxydecane, hexyltrimethoxydecane, hexyltriethoxydecane, dihexyldimethoxydecane, dihexyldiethoxydecane,octyltrimethoxydecane,octyltriethoxydecane, Dioctyldimethoxydecane, dioctyldiethoxydecane, mercaptotrimethoxydecane, mercaptotriethoxydecane, dimercaptodimethoxydecane, dimercaptodiethoxydecane , mercaptotrimethoxydecane, mercaptotriethoxydecane, dimercaptodimethoxydecane, dimercaptodiethoxydecane, ten Alkyltrimethoxydecane, undecyltriethoxydecane, di-undecyldimethoxydecane, di-undecyldiethoxydecane, dodecyltrimethoxydecane, Dodecyltriethoxydecane, di-dodecyldimethoxydecane, di-dodecyldiethoxydecane,tridecyltrimethoxydecane,tridecyltriethoxy Baseline, di-tridecyldimethoxydecane, ditridecyldiethoxydecane, tetradecyltrimethoxydecane, tetradecyltriethoxydecane,di-tetradecyl Alkyl dimethoxy decane, di-tetradecyl diethoxy decane, pentadecyl trimethoxy decane, cetyl trimethoxy decane, cetyl triethoxy decane, seventeen Alkyltrimethoxydecane, heptadecyltriethoxydecane,octadecyltrimethoxydecane,octadecyltriethoxydecane,nonadecyltrimethoxydecane,dodecyltrimethyl Ethoxy decane and the like.
上述矽烷化合物中,可僅使用1種作為(B)成分,亦可併用2種以上作為(B)成分。 In the above decane compound, only one type may be used as the component (B), or two or more types may be used in combination as the component (B).
上述矽烷化合物中,就烷基部之極性或烷氧基部之反應性之理由而言,較佳為甲基三甲氧基矽烷、乙基三甲氧基矽烷、丙基三甲氧基矽烷、丁基三甲氧基矽烷、己基三甲氧基矽烷、庚基三甲氧基矽 烷、辛基三甲氧基矽烷、壬基三甲氧基矽烷、癸基三甲氧基矽烷、十一烷基三甲氧基矽烷、十二烷基三甲氧基矽烷、十三烷基三甲氧基矽烷、十四烷基三甲氧基矽烷、十五烷基三甲氧基矽烷、十六烷基三甲氧基矽烷、十七烷基三甲氧基矽烷、十八烷基三甲氧基矽烷。 Among the above decane compounds, methyltrimethoxydecane, ethyltrimethoxydecane, propyltrimethoxydecane, and butyltrimethoxy are preferred for the reason of the polarity of the alkyl moiety or the reactivity of the alkoxy moiety. Baseline, hexyltrimethoxydecane, heptyltrimethoxyanthracene Alkane, octyltrimethoxydecane, decyltrimethoxydecane, decyltrimethoxydecane, undecyltrimethoxydecane,dodecyltrimethoxydecane,tridecyltrimethoxydecane, Tetradecyltrimethoxydecane, pentadecyltrimethoxynonane, cetyltrimethoxydecane, heptadecyltrimethoxydecane,octadecyltrimethoxydecane.
於本發明之導電性糊料中,(B)成分之矽烷化合物之調配量相對於導電性糊料之全部成分之合計100質量份為0.01~2.5質量份,進而較佳為0.02~2.0質量份。 In the conductive paste of the present invention, the blending amount of the decane compound of the component (B) is 0.01 to 2.5 parts by mass, more preferably 0.02 to 2.0 parts by mass, per 100 parts by mass of the total of all the components of the conductive paste. .
藉由(B)成分之矽烷化合物之調配量滿足上述範圍,可使導電性糊料中之金屬粒子與黏合劑樹脂形成適度之相互作用,從而使用導電性糊料而形成之導電膜具有良好之導電性與優異之耐彎折性。 When the compounding amount of the decane compound of the component (B) satisfies the above range, the metal particles in the conductive paste can form a moderate interaction with the binder resin, and the conductive film formed using the conductive paste has a good effect. Electrical conductivity and excellent bending resistance.
可認為,若(B)成分之矽烷化合物之調配量相對於導電性糊料之全部成分之合計100質量份未達0.01質量份,則矽烷化合物之調配量不足,因此無法使導電性糊料中之金屬粒子與黏合劑樹脂形成適度之相互作用。因此,所形成之導電膜之導電性變低,且於彎折前後之導電性之變化(降低)變大。 When the amount of the decane compound of the component (B) is less than 0.01 parts by mass based on 100 parts by mass of the total of all the components of the conductive paste, the amount of the decane compound is insufficient, so that the conductive paste cannot be used. The metal particles form a modest interaction with the binder resin. Therefore, the conductivity of the formed conductive film is lowered, and the change (decrease) in conductivity before and after the bending becomes large.
另一方面,若(B)成分之矽烷化合物之調配量相對於導電性糊料之全部成分之合計100質量份超過2.5質量份,則使得於加熱硬化時矽烷化合物存在於金屬粒子彼此之界面,阻礙於金屬粒子間之導通,結果所形成之導電膜之導電性變低。 On the other hand, when the blending amount of the decane compound of the component (B) exceeds 2.5 parts by mass based on 100 parts by mass of the total of all the components of the conductive paste, the decane compound is present at the interface between the metal particles at the time of heat curing. The conduction between the metal particles is hindered, and as a result, the conductivity of the formed conductive film is lowered.
如上所述,於要求較高之硬化膜硬度之導電糊料中,可使用熱硬化性樹脂作為黏合劑樹脂。 As described above, in the conductive paste which requires a high hardness of the cured film, a thermosetting resin can be used as the binder resin.
於本發明之導電性糊料中,使用包含以甲醛作為一成分之熱硬化性樹脂者作為(C)成分之黏合劑樹脂。其原因在於:以甲醛作為一成分之熱硬化性樹脂於加熱硬化時之收縮較大,按壓金屬粒子之力變強,因此容易獲得較高之導電性與較高之膜硬度。又,其原因在於: 尤其是於使用銅微粒子作為金屬粒子之情形時,可利用由甲醛產生之羥甲基之還原作用而抑制銅粒子表面之氧化,進而適度地進行硬化收縮而確保銅粒子彼此之接觸。 In the conductive paste of the present invention, a binder resin containing a thermosetting resin containing formaldehyde as a component is used as the component (C). The reason for this is that the thermosetting resin having formaldehyde as a component has a large shrinkage upon heat curing, and the force for pressing the metal particles becomes strong, so that it is easy to obtain high conductivity and high film hardness. Again, the reason is: In particular, when copper fine particles are used as the metal particles, the reduction of the surface of the copper particles can be suppressed by the reduction of the methylol group produced by formaldehyde, and the hardening shrinkage can be appropriately performed to ensure the contact of the copper particles with each other.
作為以甲醛作為一成分之熱硬化性樹脂,可例示酚樹脂、三聚氰胺樹脂、二甲苯樹脂、脲樹脂。其中,就羥甲基之還原作用與硬化收縮之程度而言,較佳為酚樹脂。若硬化收縮過大,則不需要之應力於導電膜內累積,而成為機械破損之原因。若硬化收縮過少,則無法充分確保金屬粒子彼此之接觸。 The thermosetting resin containing formaldehyde as a component may, for example, be a phenol resin, a melamine resin, a xylene resin or a urea resin. Among them, a phenol resin is preferred in terms of the degree of reduction and hardening shrinkage of the methylol group. If the hardening shrinkage is too large, the stress that is not required to accumulate in the conductive film is a cause of mechanical damage. If the hardening shrinkage is too small, the metal particles cannot be sufficiently ensured to contact each other.
於本發明之導電性糊料中,(C)成分之黏合劑樹脂之調配量可根據(A)成分(例如,銅粒子)之體積與金屬粒子間所存在之空隙部之體積的比率而適當選擇,相對於導電性糊料之全部成分之合計100質量份,較佳為5~25質量份,更佳為10~20質量份。若為5質量份以上,則黏合劑樹脂與金屬粒子表面結合之部分增加而耐彎折性提高,並且導電性糊料之流動特性變良好。若為25質量份以下,則導電體中之金屬部分變多,而可充分確保金屬粒子彼此之接點,因此使用導電性糊料而形成之導電膜之導電性與耐彎折性變良好。 In the conductive paste of the present invention, the amount of the binder resin of the component (C) may be appropriately adjusted according to the ratio of the volume of the component (A) (for example, copper particles) to the volume of the void portion between the metal particles. The total amount is preferably 5 to 25 parts by mass, more preferably 10 to 20 parts by mass, based on 100 parts by mass of the total of all the components of the conductive paste. When the amount is 5 parts by mass or more, the portion where the binder resin is bonded to the surface of the metal particles is increased, the bending resistance is improved, and the flow characteristics of the conductive paste are improved. When the amount is 25 parts by mass or less, the amount of the metal portion in the conductor is increased, and the contact between the metal particles can be sufficiently ensured. Therefore, the conductivity and the bending resistance of the conductive film formed using the conductive paste are improved.
本發明之導電性糊料除含有上述(A)~(C)之各成分外,亦可視需要於無損本發明之效果之範圍內含有溶劑或各種添加劑(調平劑、黏度調整劑等)。尤其是為了獲得具有適度流動性之糊料,較佳為含有可使熱硬化性樹脂溶解之溶劑。 In addition to the components (A) to (C), the conductive paste of the present invention may contain a solvent or various additives (a leveling agent, a viscosity modifier, etc.) as needed within the scope of the effects of the present invention. In particular, in order to obtain a paste having moderate fluidity, it is preferred to contain a solvent which can dissolve the thermosetting resin.
作為溶劑,例如可使用環己酮、環己醇、松脂醇、乙二醇、乙二醇單乙醚、乙二醇單丁醚、乙二醇單乙醚乙酸酯、乙二醇單丁醚乙酸酯、二乙二醇、二乙二醇單乙醚、二乙二醇單丁醚、二乙二醇單乙醚乙酸酯、二乙二醇單丁醚乙酸酯。就設為作為印刷用糊料之適度之黏度範圍之觀點而言,導電性糊料所含有之溶劑之量較佳為相對於導 電性糊料之全部成分之合計100質量份為5~40質量份之比例。 As the solvent, for example, cyclohexanone, cyclohexanol, rosinol, ethylene glycol, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether B can be used. Acid ester, diethylene glycol, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate. The amount of the solvent contained in the conductive paste is preferably relative to the viewpoint of the moderate viscosity range of the paste for printing. The total amount of all the components of the electric paste is 100 to 40 parts by mass.
導電性糊料可將上述(A)~(C)之各成分、及視需要之上述溶劑等其他成分進行混合而獲得。於將上述之(A)~(C)之各成分進行混合時,可於不產生熱硬化性樹脂之硬化或溶劑之揮發之程度的溫度下一面進行加熱一面進行混合。 The conductive paste can be obtained by mixing the components of the above (A) to (C) and other components such as the above-mentioned solvent as necessary. When the components (A) to (C) described above are mixed, the mixture can be mixed while being heated without causing curing of the thermosetting resin or volatilization of the solvent.
混合、攪拌時之溫度較佳為設為10~50℃。更佳為設為20~30℃。於製備導電糊料時,可藉由加熱至10℃以上之溫度而使糊料之黏度充分降低,從而可順利且充分地進行攪拌。另一方面,若混合、攪拌時之溫度超過50℃,則有於糊料中產生樹脂之硬化之虞、或產生粒子彼此之融合之虞。再者,為了防止於混合時金屬粒子被氧化,較佳為於經惰性氣體置換之容器內進行混合。 The temperature during mixing and stirring is preferably set to 10 to 50 °C. More preferably, it is set to 20 to 30 °C. When the conductive paste is prepared, the viscosity of the paste can be sufficiently lowered by heating to a temperature of 10 ° C or higher, whereby the stirring can be smoothly and sufficiently performed. On the other hand, when the temperature at the time of mixing and stirring exceeds 50 ° C, there is a possibility that the resin is hardened in the paste or the particles are fused to each other. Further, in order to prevent oxidation of the metal particles during mixing, it is preferred to carry out the mixing in a vessel substituted with an inert gas.
於以上所說明之本發明之導電性糊料中,含有(A)成分之體積電阻值為10μΩ‧cm以下且平均粒徑為0.5~15μm之金屬粒子、以及(B)成分之由上述式(1)表示之矽烷化合物、及(C)成分之包含以甲醛作為一成分之熱硬化性樹脂之黏合劑樹脂,因此藉由該導電性糊料而形成之導電膜之膜硬度較高,且導電性與耐彎折性優異。 In the conductive paste of the present invention described above, the metal particles containing the (A) component having a volume resistivity of 10 μΩ···cm or less and having an average particle diameter of 0.5 to 15 μm and the component (B) have the above formula ( 1) The decane compound and the component (C) include a binder resin of a thermosetting resin containing formaldehyde as a component. Therefore, the conductive film formed of the conductive paste has a high film hardness and is electrically conductive. Excellent in properties and resistance to bending.
本發明之附導電膜之基材具有:基材、及於該基材上塗佈上述之本發明之導電性糊料並使之硬化而形成的導電膜。 The substrate with a conductive film of the present invention comprises a substrate, and a conductive film formed by applying the above-described conductive paste of the present invention to the substrate and curing the conductive paste.
如上所述,使用本發明導電性糊料而形成之導電膜具有良好之導電性、及優異之耐彎折性,因此作為基材本體,較佳為撓性膜。作為撓性膜,可列舉:塑膠基板(例如聚醯亞胺基板、聚酯基板等)、包含纖維強化複合材料之基板(例如,玻璃纖維強化樹脂基板等)。 As described above, the conductive film formed by using the conductive paste of the present invention has excellent conductivity and excellent bending resistance. Therefore, a flexible film is preferable as the substrate body. Examples of the flexible film include a plastic substrate (for example, a polyimide substrate or a polyester substrate), and a substrate including a fiber-reinforced composite material (for example, a glass fiber-reinforced resin substrate).
作為導電性糊料之塗佈方法,可列舉網版印刷法、輥塗法、氣刀塗佈法、刮刀塗佈法、棒式塗佈法、凹版塗佈法、模具塗佈法、斜板式塗佈法等公知之方法。該等中,較佳為網版印刷法。 Examples of the coating method of the conductive paste include a screen printing method, a roll coating method, an air knife coating method, a knife coating method, a bar coating method, a gravure coating method, a die coating method, and a swash plate type. A known method such as a coating method. Among these, a screen printing method is preferred.
塗佈層之硬化係藉由利用溫風加熱、熱輻射加熱等方法進行加熱,使導電性糊料中之樹脂(熱硬化性樹脂)硬化而進行。 The hardening of the coating layer is performed by heating by a method such as warm air heating or heat radiant heating to cure the resin (thermosetting resin) in the conductive paste.
加熱溫度及加熱時間只要根據對導電膜所要求之特性而適當決定即可。加熱溫度較佳為80~200℃。若加熱溫度為80℃以上,則黏合劑樹脂之硬化順利地進行,金屬粒子間之接觸變良好而使導電性及耐久性提高。若加熱溫度為200℃以下,則可使用塑膠基板作為基材本體,因此基材選擇之自由度提高。 The heating temperature and the heating time may be appropriately determined depending on the characteristics required for the conductive film. The heating temperature is preferably from 80 to 200 °C. When the heating temperature is 80° C. or higher, the curing of the binder resin proceeds smoothly, and the contact between the metal particles is improved, and the conductivity and durability are improved. When the heating temperature is 200 ° C or lower, a plastic substrate can be used as the substrate body, and thus the degree of freedom in substrate selection is improved.
就確保穩定之導電性與配線形狀之維持之觀點而言,形成於基材上之導電膜之厚度較佳為1~200μm,更佳為5~100μm之範圍。 The thickness of the conductive film formed on the substrate is preferably from 1 to 200 μm, more preferably from 5 to 100 μm, from the viewpoint of ensuring stable conductivity and maintenance of the wiring shape.
導電膜之比電阻(亦稱為體積電阻率)較佳為50μΩcm以下。若導電膜之比電阻超過50μΩcm,則有變得難以用作電子機器用之導電體之情形。 The specific resistance (also referred to as volume resistivity) of the conductive film is preferably 50 μΩcm or less. When the specific resistance of the conductive film exceeds 50 μΩcm, it may become difficult to use it as an electric conductor for an electronic device.
又,依據下述實施例所記載之順序而測得的於彎折前後之比電阻之變化(增加)量(彎折次數5次)較佳為400%以下,更佳為200%以下,進而較佳為150%以下。 Further, the amount of change (increased) of the specific resistance before and after bending (the number of times of bending is 5 times) measured in the order described in the following examples is preferably 400% or less, more preferably 200% or less, and further It is preferably 150% or less.
以下,藉由實施例進一步詳細地說明本發明,但本發明並不限定於該等實施例。例1~5為實施例,例6為比較例。再者,金屬粒子(銅粒子)之平均粒徑、導電膜之厚度及比電阻分別使用以下所示之裝置而進行測定。 Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited to the examples. Examples 1 to 5 are examples, and example 6 is a comparative example. Further, the average particle diameter of the metal particles (copper particles), the thickness of the conductive film, and the specific resistance were measured using the apparatus shown below.
(平均粒徑) (The average particle size)
使用銅粒子作為金屬粒子。銅粒子之粒徑係對自藉由SEM(日立高新技術公司製造,S-4300)而獲得之SEM圖像中隨機選擇之100個粒子之Feret徑進行測定,將各銅粒子中之Feret徑成為最大值之徑向設為長軸,將與該長軸正交之軸設為短軸時,算出該長軸方向之Feret徑與該短軸方向之Feret徑之平均值((長軸方向之Feret徑+短軸方向之 Feret徑)/2)。然後,藉由將所算出之銅粒子之粒徑進行平均(數量平均)而求出粒徑之平均值(平均粒徑)。 Copper particles are used as the metal particles. The particle size of the copper particles is measured by the Feret diameter of 100 particles randomly selected from the SEM images obtained by SEM (manufactured by Hitachi High-Technologies Corporation, S-4300), and the Feret diameter in each copper particle becomes When the radial value of the maximum value is the long axis and the axis orthogonal to the long axis is the short axis, the average value of the Feret diameter in the long axis direction and the Feret path in the short axis direction is calculated ((long axis direction) Feret diameter + short axis direction Feret Trail)/2). Then, the average value (average particle diameter) of the particle diameters was determined by averaging (quantitatively averaging) the particle diameters of the calculated copper particles.
(導電膜之厚度) (thickness of conductive film)
導電膜之厚度係使用DEKTAK3(Veeco metrology Group公司製造)而進行測定。 The thickness of the conductive film was measured using DEKTAK3 (manufactured by Veeco Metrology Group Co., Ltd.).
(導電膜之比電阻) (specific resistance of conductive film)
導電膜之比電阻係使用四探針式體積電阻率計(三菱油化公司製造,型號:lorestaIP MCP-T250)而進行測定。 The specific resistance of the conductive film was measured using a four-probe volume resistivity meter (manufactured by Mitsubishi Petrochemical Co., Ltd., model: loresta IP MCP-T250).
於玻璃製燒杯內加入甲酸3.0g與50質量%之次亞磷酸水溶液9.0g後,將該燒杯放入水浴中並保持在40℃。向該燒杯內慢慢地添加粒徑之平均值為3μm之銅粒子(三井金屬礦業股份有限公司製造,商品名:1400YP)5.0g,進行30分鐘攪拌而獲得銅分散液。 After adding 3.0 g of formic acid and 9.0 g of a 50% by mass aqueous solution of hypophosphite to a glass beaker, the beaker was placed in a water bath and kept at 40 °C. To the beaker, 5.0 g of copper particles (manufactured by Mitsui Mining Co., Ltd., trade name: 1400YP) having an average particle diameter of 3 μm was slowly added to the beaker, and the mixture was stirred for 30 minutes to obtain a copper dispersion.
使用離心分離器,以轉數3000rpm進行10分鐘離心分離,自所獲得之銅分散液回收沈澱物。使該沈澱物分散於蒸餾水30g中,藉由離心分離再次使凝聚物沈澱,並將沈澱物分離。其後,將所獲得之沈澱物於-35kPa之減壓下以80℃加熱60分鐘,使殘留水分揮發而將其慢慢地去除,獲得粒子表面經表面改質之銅粒子(A)。 The precipitate was collected from the obtained copper dispersion using a centrifugal separator at a number of revolutions of 3000 rpm for 10 minutes. The precipitate was dispersed in 30 g of distilled water, and the aggregate was again precipitated by centrifugation, and the precipitate was separated. Thereafter, the obtained precipitate was heated at 80 ° C for 60 minutes under a reduced pressure of -35 kPa, and the residual water was volatilized and slowly removed to obtain copper particles (A) whose surface was surface-modified.
表面改質後之銅粒子之粒徑之平均值未產生變化,為3μm。再者,於以下所示之其他例中亦同樣地,表面改質後之銅粒子之粒徑之平均值未產生變化。 The average value of the particle diameter of the copper particles after surface modification did not change and was 3 μm. Further, in the other examples shown below, the average value of the particle diameters of the surface-modified copper particles did not change.
繼而,將所獲得之表面改質銅粒子(A)12g添加至使作為(C)成分之酚樹脂(群榮化學公司製造,商品名:Resitop PL6220,於以下之例中全部相同)3.7g溶解於乙二醇單丁醚乙酸酯4.3g中而成之樹脂溶液,進而將作為(B)成分之甲基三甲氧基矽烷0.030g與該混合物一起放入研缽中,於室溫下進行混合而獲得銅糊料。再者,(B)成分之調 配量相對於銅糊料之全部成分之合計100質量份為0.25質量份,(C)成分之調配量相對於銅糊料之全部成分之合計100質量份為16質量份。 Then, 12 g of the obtained surface-modified copper particles (A) was added to dissolve 3.7 g of a phenol resin (manufactured by QunRong Chemical Co., Ltd., trade name: Resitop PL6220, all the same in the following examples) as the component (C). A resin solution obtained from 4.3 g of ethylene glycol monobutyl ether acetate, and 0.030 g of methyltrimethoxydecane as a component (B) was placed in a mortar together with the mixture, and allowed to stand at room temperature. Mix to obtain a copper paste. Furthermore, the adjustment of component (B) The blending amount is 0.25 parts by mass based on 100 parts by mass of the total components of the copper paste, and the blending amount of the component (C) is 16 parts by mass based on 100 parts by mass of the total of all the components of the copper paste.
將以與例1相同之方式獲得之表面改質銅粒子(A)12g添加至使作為(C)成分之酚樹脂3.7g溶解於乙二醇單丁醚乙酸酯4.3g中而成之樹脂溶液。進而將作為(B)成分之丙基三甲氧基矽烷0.030g與該混合物一起放入研缽中,於室溫下進行混合而獲得銅糊料。再者,(B)成分之調配量相對於銅糊料之全部成分之合計100質量份為0.25質量份,(C)成分之調配量相對於銅糊料之全部成分之合計100質量份為16質量份。 12 g of the surface-modified copper particles (A) obtained in the same manner as in Example 1 was added to a resin obtained by dissolving 3.7 g of the phenol resin as the component (C) in 4.3 g of ethylene glycol monobutyl ether acetate. Solution. Further, 0.030 g of propyltrimethoxydecane as the component (B) was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. In addition, the blending amount of the component (B) is 0.25 parts by mass based on 100 parts by mass of the total components of the copper paste, and the blending amount of the component (C) is 16 parts by mass based on 100 parts by mass of the total components of the copper paste. Parts by mass.
將以與例1相同之方式獲得之表面改質銅粒子(A)12g添加至使作為(C)成分之酚樹脂3.7g溶解於乙二醇單丁醚乙酸酯4.3g中而成之樹脂溶液,進而將作為(B)成分之十二烷基三甲氧基矽烷0.030g與該混合物一起放入研缽中,於室溫下進行混合而獲得銅糊料。再者,(B)成分之調配量相對於銅糊料之全部成分之合計100質量份為0.25質量份,(C)成分之調配量相對於銅糊料之全部成分之合計100質量份為16質量份。 12 g of the surface-modified copper particles (A) obtained in the same manner as in Example 1 was added to a resin obtained by dissolving 3.7 g of the phenol resin as the component (C) in 4.3 g of ethylene glycol monobutyl ether acetate. Further, 0.030 g of dodecyltrimethoxydecane as the component (B) was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. In addition, the blending amount of the component (B) is 0.25 parts by mass based on 100 parts by mass of the total components of the copper paste, and the blending amount of the component (C) is 16 parts by mass based on 100 parts by mass of the total components of the copper paste. Parts by mass.
將以與例1相同之方式獲得之表面改質銅粒子(A)12g添加至使作為(C)成分之酚樹脂3.7g溶解於乙二醇單丁醚乙酸酯4.3g中而成之樹脂溶液,進而將作為(B)成分之十二烷基三甲氧基矽烷0.060g與該混合物一起放入研缽中,於室溫下進行混合而獲得銅糊料。再者,(B)成分之調配量相對於銅糊料之全部成分之合計100質量份為0.50質量份,(C)成分之調配量相對於銅糊料之全部成分之合計100質量份為16質量份。 12 g of the surface-modified copper particles (A) obtained in the same manner as in Example 1 was added to a resin obtained by dissolving 3.7 g of the phenol resin as the component (C) in 4.3 g of ethylene glycol monobutyl ether acetate. Further, 0.060 g of dodecyltrimethoxydecane as the component (B) was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. In addition, the blending amount of the component (B) is 0.50 parts by mass based on 100 parts by mass of the total components of the copper paste, and the blending amount of the component (C) is 16 parts by mass based on 100 parts by mass of the total components of the copper paste. Parts by mass.
將以與例1相同之方式獲得之表面改質銅粒子(A)12g添加至使作為(C)成分之酚樹脂3.7g溶解於乙二醇單丁醚乙酸酯4.3g中而成之樹脂溶液,進而將作為(B)成分之十八烷基三甲氧基矽烷0.030g與該混合物一起放入研缽中,於室溫下進行混合而獲得銅糊料。再者,(B)成分之調配量相對於銅糊料之全部成分之合計100質量份為0.25質量份,(C)成分之調配量相對於銅糊料之全部成分之合計100質量份為16質量份。 12 g of the surface-modified copper particles (A) obtained in the same manner as in Example 1 was added to a resin obtained by dissolving 3.7 g of the phenol resin as the component (C) in 4.3 g of ethylene glycol monobutyl ether acetate. Further, 0.030 g of octadecyltrimethoxydecane as the component (B) was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. In addition, the blending amount of the component (B) is 0.25 parts by mass based on 100 parts by mass of the total components of the copper paste, and the blending amount of the component (C) is 16 parts by mass based on 100 parts by mass of the total components of the copper paste. Parts by mass.
針對以與例1相同之方式獲得之表面改質銅粒子(A)12g,不添加(B)成分之矽烷化合物,除此以外,以與例1相同之方式於室溫下進行混合而獲得銅糊料。 In the same manner as in Example 1, except that 12 g of the surface-modified copper particles (A) obtained in the same manner as in Example 1 was added without adding the decane compound of the component (B), copper was obtained at room temperature in the same manner as in Example 1. Paste.
繼而,將例1~6中所獲得之銅糊料分別塗佈於75μm厚之PET(polyethylene terephthalate,聚對苯二甲酸乙二酯)上,於150℃下加熱30分鐘,使作為(C)成分之酚樹脂硬化,而形成厚度15μm之導電膜。然後,藉由微小硬度測定器(Fischer公司製造,商品名:PICODENTOR HM500)測定所獲得之導電膜之楊氏模數(單位GPa)。 Then, the copper pastes obtained in Examples 1 to 6 were respectively coated on a 75 μm thick PET (polyethylene terephthalate), and heated at 150 ° C for 30 minutes to make (C) The phenol resin of the component was hardened to form a conductive film having a thickness of 15 μm. Then, the Young's modulus (unit GPa) of the obtained conductive film was measured by a micro hardness tester (manufactured by Fischer Co., Ltd., trade name: PICODENTOR HM500).
又,使用電阻值計(Keithley公司製造,商品名:Milliohm HiTester)測定所獲得之導電膜之電阻值,測定比電阻(體積電阻率;單位μΩcm)。又,導電膜係反覆進行如下彎折操作5次而測定比電阻之變化量,即於半徑1mm之圓筒將導體向內捲繞,繼而向外捲繞,然後展開。 Further, the resistance value of the obtained conductive film was measured using a resistance meter (manufactured by Keithley Co., Ltd., trade name: Milliohm HiTester), and the specific resistance (volume resistivity; unit μΩcm) was measured. Further, the conductive film was repeatedly subjected to the following bending operation five times to measure the amount of change in the specific resistance, that is, the conductor was wound inward in a cylinder having a radius of 1 mm, and then wound outward, and then spread.
由表1可知,藉由使用調配有粒徑之平均值為0.5~15μm之銅粒子、以及相對於導電性糊料之全部成分之合計100質量份為0.01~2.5質量份之作為(B)成分之由上述式(1)表示之矽烷化合物的例1~5之導電性糊料,將該導電性糊料塗佈於基材並使之硬化而成之導電膜之比電阻較低,為50μΩcm以下。又,於彎折前後之比電阻之變化(增加)亦得到抑制。 As is clear from Table 1, it is known that the copper particles having an average particle diameter of 0.5 to 15 μm and the total amount of 100 parts by mass of all the components of the conductive paste are 0.01 to 2.5 parts by mass as the component (B). In the conductive pastes of Examples 1 to 5 of the decane compound represented by the above formula (1), the conductive paste obtained by applying the conductive paste to the substrate and having a specific resistance is low, and is 50 μΩcm. the following. Moreover, the change (increase) in the specific resistance before and after the bending is also suppressed.
相對於此,未調配有(B)成分之矽烷化合物之例6中,使用導電性糊料而製作之導電膜的由彎折引起之比電阻之變化(增加)較大。 On the other hand, in Example 6 in which the decane compound of the component (B) was not blended, the change (increase) in the specific resistance due to the bending of the conductive film produced using the conductive paste was large.
再者,與未調配有(B)成分之矽烷化合物之例6相比,調配有相對於導電性糊料之全部成分之合計100質量份為0.01~2.5質量份之由上述式(1)表示之矽烷化合物的例1~5中,硬化而成之導電膜之楊氏模數變高。可認為該楊氏模數之上升有助於抑制於彎折前後之比電阻之變化(增加)。 In addition, the total amount of 100 parts by mass of all the components of the conductive paste is 0.01 to 2.5 parts by mass, which is represented by the above formula (1), in comparison with the example 6 of the decane compound in which the component (B) is not blended. In Examples 1 to 5 of the decane compound, the Young's modulus of the cured conductive film became high. It can be considered that the increase in the Young's modulus contributes to the suppression of the change (increase) in the specific resistance before and after the bending.
已詳細且參照特定實施態樣對本發明進行了說明,但業者明瞭,可於不脫離本發明之精神與範圍之情況下進行各種變更或修正。 The present invention has been described in detail with reference to the specific embodiments thereof, and it is understood that various changes and modifications may be made without departing from the spirit and scope of the invention.
本申請案係基於2013年9月10日提出申請之日本專利申請案(日本專利特願2013-186951)者,且將其內容作為參照而併入本文中。 The present application is based on Japanese Patent Application No. 2013-186951, filed on Sep. 2010, the content of
本發明之導電性糊料可應用於各種用途,例如可應用於印刷配 線板等中之配線圖案之形成及修復、半導體封裝內之層間配線、印刷配線板與電子零件之接合等用途。 The conductive paste of the present invention can be applied to various uses, for example, it can be applied to printing The formation and repair of wiring patterns in wiring boards, etc., interlayer wiring in semiconductor packages, and bonding of printed wiring boards and electronic components.
Claims (6)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013186951A JP2015056204A (en) | 2013-09-10 | 2013-09-10 | Conductive paste and substrate with conductive film |
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| Publication Number | Publication Date |
|---|---|
| TW201516126A true TW201516126A (en) | 2015-05-01 |
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|---|---|---|---|
| TW103131043A TW201516126A (en) | 2013-09-10 | 2014-09-09 | Conductive paste and substrate with conductive film |
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| JP (1) | JP2015056204A (en) |
| KR (1) | KR20150029577A (en) |
| CN (1) | CN104425056A (en) |
| TW (1) | TW201516126A (en) |
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| JP7594460B2 (en) * | 2020-03-27 | 2024-12-04 | 三井金属鉱業株式会社 | Surface-treated particles, their manufacturing method, and conductive composition containing surface-treated particles |
-
2013
- 2013-09-10 JP JP2013186951A patent/JP2015056204A/en not_active Withdrawn
-
2014
- 2014-09-05 KR KR20140118527A patent/KR20150029577A/en not_active Withdrawn
- 2014-09-09 CN CN201410455807.4A patent/CN104425056A/en active Pending
- 2014-09-09 TW TW103131043A patent/TW201516126A/en unknown
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| JP2015056204A (en) | 2015-03-23 |
| CN104425056A (en) | 2015-03-18 |
| KR20150029577A (en) | 2015-03-18 |
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