TW201504038A - Carrier copper foil, copper clad laminate, printed wiring board, electronic device, and copper foil with carrier - Google Patents
Carrier copper foil, copper clad laminate, printed wiring board, electronic device, and copper foil with carrier Download PDFInfo
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- TW201504038A TW201504038A TW103119488A TW103119488A TW201504038A TW 201504038 A TW201504038 A TW 201504038A TW 103119488 A TW103119488 A TW 103119488A TW 103119488 A TW103119488 A TW 103119488A TW 201504038 A TW201504038 A TW 201504038A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
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Abstract
本發明之課題在於提供一種附載體銅箔及其製造方法,該附載體銅箔可於不使附載體銅箔之其他諸特性劣化且不提高附載體銅箔之極薄銅層之表面粗度的情況下,提高極薄銅層與樹脂基材之接著強度,且增大剝離強度。 本發明之附載體銅箔依序具備載體、中間層、極薄銅層及粗化處理層,上述粗化處理層由如下粗化粒子所構成:上述粗化粒子之平均直徑之平均值為0.05~1.3μm,平均長度之平均值為0.3~3.0μm,上述平均直徑之最大值與最小值的差除以上述平均直徑的平均值所得之值A{A=粗化粒子之平均直徑之最大值與最小值的差(μm)/粗化粒子之平均直徑的平均值(μm)}為0.6以下。 An object of the present invention is to provide a copper foil with a carrier which can not deteriorate other characteristics of the copper foil to be attached and which does not increase the surface roughness of the extremely thin copper layer of the copper foil with a carrier. In the case, the adhesion strength between the ultra-thin copper layer and the resin substrate is increased, and the peel strength is increased. The copper foil with carrier of the present invention is provided with a carrier, an intermediate layer, an ultra-thin copper layer and a roughened layer in sequence, and the roughened layer is composed of roughened particles: the average diameter of the roughened particles is 0.05 ~1.3 μm, the average value of the average length is 0.3 to 3.0 μm, the difference between the maximum value and the minimum value of the above average diameter is divided by the average value of the above average diameters A{A=the maximum value of the average diameter of the roughened particles The difference (μm) from the minimum value / the average value (μm) of the average diameter of the roughened particles is 0.6 or less.
Description
本發明係關於一種附載體銅箔、覆銅積層板、印刷配線板、電子機器及附載體銅箔之製造方法。 The present invention relates to a method of manufacturing a carrier-attached copper foil, a copper-clad laminate, a printed wiring board, an electronic device, and a copper foil with a carrier.
印刷配線板通常係經由如下步驟而製造:於使絕緣基板接著於銅箔而製成覆銅積層板後,藉由蝕刻而於銅箔面形成導體圖案。隨著近年之電子機器之小型化、高性能化需求之增大,搭載零件之高密度安裝化或訊號之高頻化有所發展,對印刷配線板要求導體圖案之微細化(微間距化)或高頻應對等。 The printed wiring board is usually manufactured by forming a conductor pattern on the copper foil surface by etching after the insulating substrate is formed on the copper foil to form a copper clad laminate. With the increase in the demand for miniaturization and high performance of electronic devices in recent years, the high-density mounting of components and the high-frequency of signals have been developed, and the conductor pattern has been required to be miniaturized (fine pitch). Or high frequency response.
與微間距化相對應,最近要求厚度9μm以下、進而厚度5μm以下之銅箔,但由於此種極薄之銅箔機械強度低,於製造印刷配線板時容易破裂或產生褶皺,故而出現如下附載體銅箔,該附載體銅箔係利用具有厚度之金屬箔作為載體,於其上介隔剝離層電鍍極薄銅層而成。附載體銅箔之通常之使用方法係於將極薄銅層之表面貼合於絕緣基板並熱壓接後,經由剝離層將載體剝離。 Corresponding to the micro-pitching, a copper foil having a thickness of 9 μm or less and a thickness of 5 μm or less has recently been required. However, since such an extremely thin copper foil has low mechanical strength, it is liable to be broken or wrinkled when manufacturing a printed wiring board, and thus the following is attached. The carrier copper foil is formed by using a metal foil having a thickness as a carrier and plating an extremely thin copper layer thereon via a release layer. The usual method of using the carrier copper foil is to bond the surface of the ultra-thin copper layer to the insulating substrate and thermocompression bonding, and then peel the carrier through the release layer.
此處,對於成為與樹脂之接著面的附載體銅箔之極薄銅層之 表面,主要要求極薄銅層與樹脂基材之剝離強度充分,並且該剝離強度於高溫加熱、濕式處理、焊接、化學品處理等後亦得以充分保持。 Here, for the extremely thin copper layer of the copper foil with the carrier which is the adhesion surface of the resin The surface mainly requires sufficient peel strength of the extremely thin copper layer and the resin substrate, and the peel strength is sufficiently maintained after high-temperature heating, wet processing, welding, chemical treatment, and the like.
作為提高極薄銅層與樹脂基材之間之剝離強度之方法,通常具有代表性之方法為於增大了表面之分佈(凹凸、粗糙度)之極薄銅層上附著大量粗化粒子。 As a method of increasing the peel strength between the ultra-thin copper layer and the resin substrate, a typical method is to adhere a large amount of roughened particles to the extremely thin copper layer which increases the distribution (concavity and roughness) of the surface.
然而,若於印刷配線板中尤其是需要形成微細之電路圖案之半導體封裝基板中使用此種分佈(凹凸、粗糙度)大之極薄銅層,則於電路蝕刻時殘留不必要之銅粒子,產生電路圖案間之絕緣不良等問題。 However, if such an extremely thin copper layer having a large distribution (concavity, roughness, and roughness) is used in a printed wiring board, in particular, a semiconductor package substrate in which a fine circuit pattern is required to be formed, unnecessary copper particles remain during circuit etching. Problems such as poor insulation between circuit patterns are generated.
因此,作為以半導體封裝基板為主之微細電路用途之附載體銅箔,嘗試使用極薄銅層之表面未實施粗化處理之附載體銅箔。此種未實施粗化處理之極薄銅層與樹脂之密接性(剝離強度)由於其低之分佈(凹凸、粗度、粗糙度)之影響,而與通常之附載體銅箔相比有降低之傾向(專利文獻1)。 Therefore, as a copper foil with a carrier which is used for a fine circuit mainly using a semiconductor package substrate, it is attempted to use a copper foil with a carrier which is not roughened on the surface of an extremely thin copper layer. The adhesion between the ultra-thin copper layer which is not subjected to the roughening treatment and the resin (peeling strength) is lower than that of the conventional carrier-attached copper foil due to its low distribution (concavity, roughness, roughness). The tendency (Patent Document 1).
[專利文獻1]WO2004/005588號 [Patent Document 1] WO2004/005588
因此,關於附載體銅箔要求進一步改善。本發明之課題在於提供一種附載體銅箔及其製造方法,該附載體銅箔可於不使附載體銅箔之其他諸特性劣化且不提高附載體銅箔之極薄銅層之表面粗度之情況下,提高極薄銅層與樹脂基材之接著強度,且增大剝離強度。 Therefore, further improvement is required regarding the copper foil with a carrier. An object of the present invention is to provide a copper foil with a carrier which can not deteriorate other characteristics of the copper foil to be attached and which does not increase the surface roughness of the extremely thin copper layer of the copper foil with a carrier. In this case, the adhesion strength between the ultra-thin copper layer and the resin substrate is increased, and the peel strength is increased.
為了達成上述目的,本發明者等人反覆進行潛心研究,結果發現,極為有效的是於附載體銅箔之極薄銅層表面形成由分別對平均直徑之平均值、平均長度之平均值及平均直徑之最大值與最小值的差除以平均直徑的平均值所得之值加以控制之粗化粒子所構成之粗化處理層。 In order to achieve the above object, the present inventors have repeatedly conducted intensive studies, and as a result, found that it is extremely effective to form an average value and an average value of the average value and the average length of the average diameter on the surface of the extremely thin copper layer of the copper foil with a carrier. The roughened layer composed of the roughened particles controlled by the difference between the maximum value and the minimum value of the diameter divided by the average value of the average diameter.
本發明係以上述見解為基礎而完成者,一態樣係一種附載體銅箔,其依序具備載體、中間層、極薄銅層及粗化處理層,上述粗化處理層由如下之粗化粒子所構成:該粗化粒子之平均直徑之平均值為0.05~1.3μm,平均長度之平均值為0.3~3.0μm,上述平均直徑之最大值與最小值的差除以上述平均直徑的平均值所得之值A{A=粗化粒子之平均直徑之最大值與最小值的差(μm)/粗化粒子之平均直徑的平均值(μm)}為0.6以下。 The present invention is based on the above findings, and is a copper foil with a carrier, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer and a roughened layer in sequence, and the roughened layer is as follows The average particle diameter of the roughened particles is 0.05 to 1.3 μm, and the average length is 0.3 to 3.0 μm. The difference between the maximum value and the minimum value of the average diameter is divided by the average of the average diameters. The value obtained by the value A{A = the difference between the maximum value and the minimum value of the average diameter of the roughened particles (μm) / the average value (μm) of the average diameter of the roughened particles is 0.6 or less.
本發明之附載體銅箔於一實施形態中,上述粗化粒子之平均長度與上述粗化粒子之平均直徑的比之平均值B為1.4以上。 In one embodiment, the copper foil with a carrier of the present invention has an average value B of a ratio of an average length of the roughened particles to an average diameter of the roughened particles of 1.4 or more.
本發明之附載體銅箔於另一實施形態中,上述粗化粒子之平均長度與上述粗化粒子之平均直徑的比之平均值B為20以下。 In another embodiment of the copper foil with a carrier of the present invention, the average value B of the ratio of the average length of the roughened particles to the average diameter of the roughened particles is 20 or less.
本發明之附載體銅箔於進而另一實施形態中,上述粗化粒子之平均長度之最大值與最小值的差除以上述粗化粒子之平均長度的平均值所得之值C{C=粗化粒子之平均長度之最大值與最小值的差(μm)/粗化粒子之平均長度的平均值(μm)}為0.5以下。 In still another embodiment of the copper foil with a carrier of the present invention, the difference between the maximum value and the minimum value of the average length of the roughened particles is divided by the average value of the average length of the roughened particles, C{C=rough The difference between the maximum value and the minimum value of the average length of the particles (μm) / the average value (μm) of the average length of the roughened particles is 0.5 or less.
本發明之附載體銅箔於進而另一實施形態中,上述粗化粒子之平均長度與上述粗化粒子之平均直徑之比之最大值與最小值的差除以上 述粗化粒子之平均長度與上述粗化粒子之平均直徑之比的平均值B所得之值D{D=粗化粒子之平均長度與上述粗化粒子之平均直徑之比之最大值與上述比之最小值的差/B}為0.4以下。 In still another embodiment of the copper foil with a carrier of the present invention, the difference between the maximum value and the minimum value of the ratio of the average length of the roughened particles to the average diameter of the roughened particles is divided by a value obtained by the average value B of the ratio of the average length of the roughened particles to the average diameter of the roughened particles, D{D=the maximum ratio of the average length of the roughened particles to the average diameter of the roughened particles, and the ratio The difference / B} of the minimum value is 0.4 or less.
本發明之附載體銅箔於進而另一實施形態中,其於上述粗化處理層上具備樹脂層。 In still another embodiment of the copper foil with a carrier of the present invention, the resin layer is provided on the roughened layer.
本發明之附載體銅箔於進而另一實施形態中,其於上述粗化處理層之表面具有選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中1種以上之層。 In still another embodiment, the copper foil with a carrier of the present invention has a surface selected from the group consisting of a heat-resistant layer, a rust-preventing layer, a chromate-treated layer, and a decane coupling treatment layer on the surface of the roughened layer. More than one layer.
本發明之附載體銅箔於進而另一實施形態中,於上述選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中1種以上之層上具備樹脂層。 In still another embodiment, the copper foil with a carrier of the present invention has a resin layer on one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventing layer, a chromate-treated layer, and a decane coupling treatment layer. .
本發明之附載體銅箔於進而另一實施形態中,上述樹脂層係接著用樹脂。 In still another embodiment of the copper foil with a carrier of the present invention, the resin layer is followed by a resin.
本發明之附載體銅箔於進而另一實施形態中,上述樹脂層係底塗層(primer)。 In still another embodiment of the copper foil with a carrier of the present invention, the resin layer is a primer.
本發明之附載體銅箔於進而另一實施形態中,上述樹脂層為半硬化狀態之樹脂。 In still another embodiment of the copper foil with a carrier of the present invention, the resin layer is a resin in a semi-hardened state.
本發明之附載體銅箔於進而另一實施形態中,上述樹脂層為嵌段共聚聚醯亞胺樹脂層或含有嵌段共聚聚醯亞胺樹脂與聚順丁烯二醯亞胺化合物之樹脂層。 In still another embodiment of the copper foil with a carrier of the present invention, the resin layer is a block copolymerized polyimide resin layer or a resin containing a block copolymerized polyimide resin and a polysyntheimide compound. Floor.
本發明於另一方面係一種附載體銅箔,其依序具備載體、中間層、極薄銅層及粗化處理層,於在上述粗化處理層上積層樹脂層後,將 上述載體及上述中間層自上述極薄銅層剝離,其後藉由蝕刻除去上述極薄銅層之情形時,在積層於上述粗化處理層上之樹脂層之積層於上述粗化處理層上之側的表面,具有轉印上述粗化處理層之表面之凹凸而成之凹凸的樹脂層表面之孔所占面積總和之平均值為20%以上,孔所占面積總和之最大值與孔所占面積總和之最小值的差除以孔所占面積總和的平均值所得之值E為0.6以下。 In another aspect, the present invention is a copper foil with a carrier, which is provided with a carrier, an intermediate layer, an ultra-thin copper layer and a roughened layer in sequence, after laminating the resin layer on the roughened layer, The carrier and the intermediate layer are peeled off from the ultra-thin copper layer, and when the ultra-thin copper layer is removed by etching, the resin layer laminated on the roughened layer is laminated on the roughened layer. The average surface area of the surface of the resin layer having the unevenness of the surface of the roughened layer is 20% or more, and the maximum of the total area of the hole and the hole are The value E obtained by dividing the difference between the minimum values of the area totals by the average of the area occupied by the holes is 0.6 or less.
本發明之附載體銅箔於進而另一實施形態中,於在上述粗化處理層上積層樹脂層後,將上述載體及上述中間層自上述極薄銅層剝離,其後藉由蝕刻除去上述極薄銅層之情形時,在積層於上述粗化處理層上之樹脂層之積層於上述粗化處理層上之側的表面,具有轉印上述粗化處理層之表面之凹凸而成之凹凸的樹脂層表面之孔所占面積總和之平均值為20%以上,孔所占面積總和之最大值與孔所占面積總和之最小值的差除以孔所占面積總和之平均值所得之值E為0.6以下。 In still another embodiment of the copper foil with a carrier of the present invention, after the resin layer is laminated on the roughened layer, the carrier and the intermediate layer are peeled off from the ultra-thin copper layer, and then the etching is removed by etching. In the case of the ultra-thin copper layer, the surface of the resin layer laminated on the roughened layer on the side of the roughened layer has a surface on which the unevenness of the surface of the roughened layer is transferred. The average value of the area occupied by the pores on the surface of the resin layer is 20% or more, and the difference between the maximum value of the total area of the pores and the total area of the total area of the pores is divided by the average value of the total area of the pores. E is 0.6 or less.
本發明之附載體銅箔於進而另一實施形態中,具有上述粗化處理層之面之表面之十點平均粗糙度Rz為0.15μm以上且3.0μm以下。 In still another embodiment of the copper foil with a carrier of the present invention, the ten-point average roughness Rz of the surface of the surface of the roughened layer is 0.15 μm or more and 3.0 μm or less.
本發明之附載體銅箔於進而另一實施形態中,於上述載體之兩面依序具備上述中間層、上述極薄銅層及上述粗化處理層。 In still another embodiment of the copper foil with a carrier of the present invention, the intermediate layer, the ultra-thin copper layer, and the roughened layer are sequentially provided on both sides of the carrier.
本發明之附載體銅箔於進而另一實施形態中,於上述載體之其中一面依序具備上述中間層、上述極薄銅層及上述粗化處理層,且於上述載體之另一面具有粗化處理層。 In still another embodiment of the copper foil with a carrier of the present invention, the intermediate layer, the ultra-thin copper layer and the roughened layer are sequentially provided on one side of the carrier, and the other side of the carrier is roughened. Processing layer.
本發明於進而另一方面係一種樹脂層,其中,具有轉印本發明之上述粗化處理層之表面之凹凸而成之凹凸的樹脂層表面之孔所占面積 總和的平均值為20%以上,孔所占面積總和之最大值與孔所占面積總和之最小值的差除以孔所占面積總和之平均值所得之值E為0.6以下。 Further, the present invention is a resin layer having an area occupied by a hole of a surface of a resin layer which is formed by transferring unevenness of the surface of the roughened layer of the present invention. The average value of the sum is 20% or more, and the value E obtained by dividing the difference between the maximum value of the total area of the pores and the total area of the pores by the average of the area occupied by the pores is 0.6 or less.
本發明於進而另一方面係一種印刷配線板,其係使用本發明之附載體銅箔而製造。 The present invention, in still another aspect, is a printed wiring board produced by using the copper foil with a carrier of the present invention.
本發明於進而另一方面係一種電子機器,其使用本發明之印刷配線板。 The present invention, in still another aspect, is an electronic device using the printed wiring board of the present invention.
本發明於進而另一方面係一種覆銅積層板,其係使用本發明之附載體銅箔而製造。 In still another aspect, the present invention is a copper clad laminate which is produced by using the copper foil with a carrier of the present invention.
本發明於進而另一方面係一種附載體銅箔之製造方法,其係依序具備載體、中間層、極薄銅層及粗化處理層之附載體銅箔之製造方法,使用由含有鎢離子及/或砷離子及硫酸烷基酯系陰離子界面活性劑之硫酸、及硫酸銅所構成之電解浴,於上述極薄銅層之表面形成由銅之粗化粒子所構成之粗化處理層。 The present invention is a method for producing a copper foil with a carrier, which is a method for producing a copper foil with a carrier, an intermediate layer, an ultra-thin copper layer and a roughened layer, which is provided with tungsten ions. And/or an electrolytic bath composed of sulfuric acid and copper sulfate of an arsenic ion and an alkyl sulfate anion surfactant, and a roughened layer composed of copper roughened particles is formed on the surface of the ultra-thin copper layer.
本發明之附載體銅箔之製造方法於一實施形態中,上述電解浴含有2~100mg/l之上述界面活性劑。 In one embodiment of the method for producing a copper foil with a carrier according to the present invention, the electrolytic bath contains 2 to 100 mg/l of the surfactant.
本發明之附載體銅箔之製造方法於另一實施形態中,其使用由硫酸及硫酸銅所構成之電解浴而於上述粗化處理層上形成覆鍍處理層。 In another embodiment of the method for producing a copper foil with a carrier according to the present invention, a plating treatment layer is formed on the roughened layer using an electrolytic bath composed of sulfuric acid and copper sulfate.
本發明之附載體銅箔之製造方法於進而另一實施形態中,其於上述覆鍍處理層上形成含有選自鋅、鎳、銅及磷中之至少一種以上之元素的耐熱及/或防銹層。 In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, the heat-resistant and/or prevention element containing at least one element selected from the group consisting of zinc, nickel, copper and phosphorus is formed on the plating treatment layer. Rust layer.
本發明之附載體銅箔之製造方法於進而另一實施形態中,其於上述耐熱及/或防銹層上形成鉻酸鹽處理層。 In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, a chromate treatment layer is formed on the heat resistant and/or rustproof layer.
本發明之附載體銅箔之製造方法於進而另一實施形態中,其於上述鉻酸鹽處理層上形成矽烷偶合處理層。 In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, a decane coupling treatment layer is formed on the chromate treatment layer.
本發明於進而另一方面係一種印刷配線板之製造方法,其包括如下步驟:準備本發明之附載體銅箔與絕緣基板;積層上述附載體銅箔與絕緣基板;於積層上述附載體銅箔與絕緣基板後經過剝離上述附載體銅箔之載體之步驟而形成覆銅積層板,其後,藉由半加成法、減成法、部分加成法或改良型半加成法中任一種方法而形成電路。 According to still another aspect of the present invention, in a method of manufacturing a printed wiring board, the method includes the steps of: preparing a copper foil and an insulating substrate with a carrier of the present invention; laminating the copper foil and the insulating substrate with the carrier; and laminating the copper foil with the carrier Forming a copper clad laminate with the step of peeling off the carrier with the carrier copper foil after the insulating substrate, and then, by any of a semi-additive method, a subtractive method, a partial addition method or a modified semi-additive method The method forms a circuit.
本發明於進而另一方面係一種印刷配線板之製造方法,其包括如下步驟:於本發明之附載體銅箔之上述極薄銅層側表面形成電路;以掩埋上述電路之方式於上述附載體銅箔之上述極薄銅層側表面形成樹脂層;於上述樹脂層上形成電路;於上述樹脂層上形成電路後剝離上述載體;及於剝離上述載體後除去上述極薄銅層,藉此使於上述極薄銅層側表面形成之掩埋於上述樹脂層中之電路露出。 According to still another aspect of the present invention, in a method of manufacturing a printed wiring board, the method includes the steps of: forming a circuit on a side surface of the ultra-thin copper layer of the copper foil with a carrier of the present invention; and attaching the circuit to the carrier a surface of the copper foil on the side of the ultra-thin copper layer forming a resin layer; forming a circuit on the resin layer; forming a circuit on the resin layer to peel off the carrier; and removing the ultra-thin copper layer after peeling off the carrier, thereby A circuit formed on the side surface of the ultra-thin copper layer and buried in the resin layer is exposed.
根據本發明,可提供一種附載體銅箔及其製造方法,該附載體銅箔可於不使附載體銅箔之其他諸特性劣化且不提高附載體銅箔之極薄銅層之表面粗度之情況下,提高極薄銅層與樹脂基材之接著強度,且增大剝離強度。本發明之附載體銅箔作為近年印刷配線板之微細配線化及高頻 化有所發展之半導體封裝基板等微細配線形成用之附載體銅箔極為有效。 According to the present invention, it is possible to provide a copper foil with a carrier which can not deteriorate other characteristics of the copper foil to be supported and which does not increase the surface roughness of the extremely thin copper layer of the copper foil with a carrier. In this case, the adhesion strength between the ultra-thin copper layer and the resin substrate is increased, and the peel strength is increased. The copper foil with carrier of the present invention is used as a fine wiring and high frequency of printed wiring boards in recent years. It is extremely effective to form a copper foil with a carrier for forming a fine wiring such as a semiconductor package substrate which has been developed.
圖1係本發明中之粗化粒子之直徑及長度的概念圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a conceptual diagram of the diameter and length of roughened particles in the present invention.
圖2係實施例之粗化粒子之平均直徑及平均長度之評價中的粗化處理層剖面之FIB-SIM照片之參考圖。 Fig. 2 is a reference view of the FIB-SIM photograph of the roughened layer profile in the evaluation of the average diameter and the average length of the roughened particles of the examples.
圖3係表示樹脂表面之外觀照片之例。 Fig. 3 is a view showing an example of the appearance of the surface of the resin.
圖4係電路圖案之寬度方向之橫截面之模式圖與使用該模式圖之蝕刻因數之計算方法的概略。 Fig. 4 is a schematic view showing a cross-sectional view of a cross section in the width direction of the circuit pattern and a calculation method of an etching factor using the pattern.
<載體> <carrier>
本發明之附載體銅箔之載體可使用銅箔、鋁箔、鋁合金箔或鐵合金、不鏽鋼、鎳、鎳合金等箔。再者,若考慮中間層於載體上之積層容易性,則載體較佳為銅箔。用於載體之銅箔典型而言可以壓延銅箔或電解銅箔之形態提供。通常,電解銅箔係將銅自硫酸銅鍍浴電解析出至鈦或不鏽鋼滾筒上而製造,壓延銅箔係反覆進行利用壓延輥進行之塑性加工與熱處理而製造。作為銅箔之材料,除精銅或無氧銅等高純度銅以外,例如亦可使用如含Sn銅、含Ag銅、添加有Cr、Zr或Mg等之銅合金、添加有Ni及Si等之卡遜(corson)系銅合金之銅合金。再者,於本說明書中,於單獨使用用語「銅箔」時亦包括銅合金箔。 The carrier of the copper foil with a carrier of the present invention may be a foil such as a copper foil, an aluminum foil, an aluminum alloy foil or an iron alloy, stainless steel, nickel or a nickel alloy. Further, in consideration of the ease of lamination of the intermediate layer on the carrier, the carrier is preferably a copper foil. The copper foil used for the carrier is typically provided in the form of a rolled copper foil or an electrolytic copper foil. Usually, an electrolytic copper foil is produced by electrically analyzing copper from a copper sulfate plating bath onto a titanium or stainless steel drum, and the rolled copper foil is repeatedly produced by plastic working and heat treatment by a calender roll. As the material of the copper foil, in addition to high-purity copper such as refined copper or oxygen-free copper, for example, a copper alloy containing Sn copper, Ag-containing copper, Cr, Zr or Mg, or the like may be used, and Ni and Si may be added. Corson is a copper alloy of copper alloy. Further, in the present specification, a copper alloy foil is also included in the term "copper foil" alone.
可用於本發明之載體之厚度亦無特別限制,適當調節為於發揮作為載體之作用方面合適之厚度即可,例如可設為12μm以上。然而,若過厚,則生產成本變高,故而通常較佳為設為35μm以下。因此,載體之厚度典型而言為12~70μm,更典型而言為18~35μm。 The thickness of the carrier which can be used in the present invention is not particularly limited, and may be appropriately adjusted so as to exhibit a suitable thickness as a carrier, and may be, for example, 12 μm or more. However, if it is too thick, the production cost becomes high, and therefore it is usually preferably 35 μm or less. Therefore, the thickness of the carrier is typically from 12 to 70 μm, more typically from 18 to 35 μm.
再者,於該載體之與設有極薄銅層一側之表面為相反側之表面亦可設置粗化處理層。該粗化處理層可使用公知之方法而設置,亦可藉由下文所述之粗化處理而設置。於載體之與設有極薄銅層一側之表面為相反側之表面設置粗化處理層,於自具有該粗化處理層之表面側將載體積層於樹脂基板等支持體上時,具有載體與樹脂基板變得難以剝離之優點。再者,於載體與粗化處理層之間亦可設置其他層。 Further, a roughened layer may be provided on the surface of the carrier opposite to the surface on the side where the ultra-thin copper layer is provided. The roughening treatment layer may be provided by a known method or may be provided by a roughening treatment as described below. A roughening treatment layer is provided on a surface of the carrier opposite to the surface on the side where the ultra-thin copper layer is provided, and the carrier layer is provided on the support side of the resin substrate or the like on the surface side of the roughened layer. The advantage that the resin substrate becomes difficult to peel off. Furthermore, other layers may be provided between the carrier and the roughened layer.
<中間層> <intermediate layer>
於載體上設置中間層。於載體與中間層之間亦可設置其他層。本發明之附載體銅箔之中間層較佳為由含有Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、或該等之合金、或該等之水合物、或該等之氧化物、或者有機物中任一種以上之層所形成。中間層亦可為多層。例如,中間層自載體側起由如下層構成:由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al之元素群內任一種元素所構成之單一金屬層,或由選自Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al之元素群中一種以上之元素所構成之合金層;繼而為由選自Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al之元素群中一種以上之元素之水合物或氧化物所構成之層。又,例如中間層可為由Ni及Cr之2層構成。Ni層係以接觸與載體之界面之方式積層,Cr層係以接觸與極薄銅層之界面之方式積層。可將中間層之Cr之附著量設定為10~100μg/dm2,且將Ni之附著量 設定為1000~40000μg/dm2。 An intermediate layer is provided on the carrier. Other layers may also be provided between the carrier and the intermediate layer. The intermediate layer of the copper foil with carrier of the present invention preferably contains Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, or an alloy thereof, or a hydrate thereof, or It is formed by an oxide or a layer of any one or more of organic substances. The intermediate layer can also be a plurality of layers. For example, the intermediate layer is composed of a single metal layer composed of any one of elements such as Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, and Al from the carrier side, or is selected from the following layers. An alloy layer composed of one or more elements of an element group of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, and Al; and then selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti A layer composed of a hydrate or an oxide of one or more elements of the element group of W, P, Cu, and Al. Further, for example, the intermediate layer may be composed of two layers of Ni and Cr. The Ni layer is laminated in such a manner as to contact the interface with the carrier, and the Cr layer is laminated in such a manner as to contact the interface with the ultra-thin copper layer. The adhesion amount of Cr in the intermediate layer can be set to 10 to 100 μg/dm 2 , and the adhesion amount of Ni can be set to 1000 to 40,000 μg/dm 2 .
<極薄銅層> <very thin copper layer>
於中間層上設置有極薄銅層。於中間層與極薄銅層之間亦可設置其他層。本發明之附載體銅箔之極薄銅層可藉由利用硫酸銅、焦磷酸銅、胺基磺酸銅、氰化銅等之電解浴之電鍍而形成,由於在通常之電解銅箔中使用,且可於高電流密度下形成銅箔,故而較佳為硫酸銅浴。極薄銅層之厚度並無特別限制,通常薄於載體,例如為12μm以下。典型而言為0.1~12μm,更典型而言為0.5~12μm,進而典型而言為2~5μm。極薄銅層亦可設置於載體之兩面。又,亦可於載體之兩面依序具備中間層、極薄銅層及上述粗化處理層。 An extremely thin copper layer is provided on the intermediate layer. Other layers may be disposed between the intermediate layer and the ultra-thin copper layer. The extremely thin copper layer of the copper foil with carrier of the present invention can be formed by electroplating using an electrolytic bath of copper sulfate, copper pyrophosphate, copper sulfonate, copper cyanide or the like, since it is used in usual electrolytic copper foil. Copper foil can be formed at a high current density, and therefore a copper sulfate bath is preferred. The thickness of the ultra-thin copper layer is not particularly limited, and is usually thinner than the carrier, for example, 12 μm or less. Typically it is from 0.1 to 12 μm, more typically from 0.5 to 12 μm, and more typically from 2 to 5 μm. An extremely thin copper layer may also be provided on both sides of the carrier. Further, an intermediate layer, an ultra-thin copper layer, and the roughened layer may be provided in order on both sides of the carrier.
<粗化處理層> <Coarsening layer>
於極薄銅層之表面形成有粗化處理層。於極薄銅層與粗化處理層之間亦可設置其他層。粗化處理層係由平均直徑之平均值為0.05~1.3μm、平均長度之平均值為0.3~3.0μm之粗化粒子所構成。所謂粗化粒子之「平均直徑之平均值」,表示於粗化處理層表面,分別對多個部位進行觀察,測定各部位之粗化粒子之平均直徑,根據該多個平均直徑計算其平均所得之值。所謂粗化粒子之「平均長度之平均值」,係表示於粗化處理層剖面,分別對多個部位進行觀察,測定各部位之粗化粒子之平均長度,根據該多個平均長度計算其平均所得之值。此處,所謂粗化粒子之「長度」,係表示於粗化處理層剖面所觀察之粗化粒子之凹凸之高度。又,將本發明中之粗化粒子之直徑及長度之概念圖示於圖1。 A roughened layer is formed on the surface of the ultra-thin copper layer. Other layers may be disposed between the ultra-thin copper layer and the roughened layer. The roughening treatment layer is composed of roughened particles having an average diameter of 0.05 to 1.3 μm and an average length of 0.3 to 3.0 μm. The "average diameter of the average diameter" of the roughened particles is shown on the surface of the roughened layer, and a plurality of portions are observed, and the average diameter of the roughened particles at each portion is measured, and the average of the plurality of average diameters is calculated. The value. The "average value of the average length" of the roughened particles is shown in the cross section of the roughened layer, and each of the portions is observed, and the average length of the roughened particles at each portion is measured, and the average is calculated based on the plurality of average lengths. The value obtained. Here, the "length" of the roughened particles is the height of the unevenness of the roughened particles observed in the cross section of the roughened layer. Further, the concept of the diameter and length of the roughened particles in the present invention is shown in Fig. 1.
由於構成粗化處理層之粗化粒子之平均直徑之平均值為 0.05μm以上,因此具有剝離強度之平均值提高的效果。又,由於粗化粒子之平均直徑之平均值為1.3μm以下,因此具有蝕刻因數提高之效果。進而,由於構成粗化處理層之粗化粒子之平均長度之平均值為0.3μm以上,因此具有剝離強度之平均值提高之效果。又,由於粗化粒子之平均長度之平均值為3.0μm以下,因此具有蝕刻因數提高之效果。構成本發明之粗化處理層的粗化粒子之平均直徑之平均值較佳為0.08μm以上且1.2μm以下,更佳為0.1μm以上且1.0μm以下,更佳為0.1μm以上且0.8μm以下,更佳為0.1μm以上且0.7μm以下,更佳為0.15μm以上且0.6μm以下。又,構成本發明之粗化處理層的粗化粒子之平均長度之平均值較佳為0.4μm以上且2.8μm以下,更佳為0.5μm以上且2.6μm以下,更佳為0.6μm以上且2.3μm以下,更佳為0.7μm以上且2.0μm以下,更佳為0.8μm以上且1.8μm以下。 The average value of the average diameter of the roughened particles constituting the roughened layer is When the thickness is 0.05 μm or more, the average value of the peel strength is improved. Further, since the average value of the average diameter of the roughened particles is 1.3 μm or less, the etching factor is improved. Further, since the average value of the average length of the roughened particles constituting the roughened layer is 0.3 μm or more, the average value of the peel strength is improved. Further, since the average value of the average length of the roughened particles is 3.0 μm or less, the etching factor is improved. The average value of the average diameter of the roughened particles constituting the roughened layer of the present invention is preferably 0.08 μm or more and 1.2 μm or less, more preferably 0.1 μm or more and 1.0 μm or less, and still more preferably 0.1 μm or more and 0.8 μm or less. More preferably, it is 0.1 μm or more and 0.7 μm or less, and more preferably 0.15 μm or more and 0.6 μm or less. Further, the average value of the average length of the roughened particles constituting the roughened layer of the present invention is preferably 0.4 μm or more and 2.8 μm or less, more preferably 0.5 μm or more and 2.6 μm or less, still more preferably 0.6 μm or more and 2.3. The thickness is preferably not more than 0.7 μm and not more than 2.0 μm, more preferably from 0.8 μm to 1.8 μm.
構成本發明之附載體銅箔之粗化處理層之粗化粒子的平均直徑之最大值與最小值的差除以平均直徑的平均值所得之值A{A=粗化粒子之平均直徑之最大值與最小值的差(μm)/粗化粒子之平均直徑的平均值(μm)}為0.6以下。藉由此種構成,具有剝離強度之平均值之不均小之效果。該值A之上限較佳為0.55以下,更佳為0.5以下,更佳為0.45以下,更佳為0.4以下。該值A之下限無需特別設置,典型而言為0.001以上,或0.01以上,或0.05以上。 The value obtained by dividing the difference between the maximum value and the minimum value of the average diameter of the roughened particles of the roughened layer of the copper foil with carrier of the present invention divided by the average value of the average diameter A{A=the maximum diameter of the roughened particles The difference between the value and the minimum value (μm) / the average value (μm) of the average diameter of the roughened particles is 0.6 or less. With such a configuration, there is an effect that the unevenness of the average value of the peel strength is small. The upper limit of the value A is preferably 0.55 or less, more preferably 0.5 or less, still more preferably 0.45 or less, still more preferably 0.4 or less. The lower limit of the value A need not be particularly set, and is typically 0.001 or more, or 0.01 or more, or 0.05 or more.
本發明之附載體銅箔較佳為粗化粒子之平均長度與粗化粒子之平均直徑的比之平均值B為1.4以上。藉由此種構成,具有剝離強度之平均值提高之效果。該比B更佳為20以下。藉由此種構成,具有蝕刻因數 提高之效果。該比B進而更佳為1.6以上且15以下,進而更佳為1.6以上且15以下,進而更佳為2.0以上且10以下,進而更佳為2.2以上且7以下,進而更佳為2.4以上且5以下。 The copper foil with a carrier of the present invention preferably has an average value B of a ratio of an average length of the roughened particles to an average diameter of the roughened particles of 1.4 or more. With such a configuration, the average value of the peel strength is improved. The ratio B is preferably 20 or less. With this configuration, there is an etching factor Improve the effect. The ratio B is more preferably 1.6 or more and 15 or less, still more preferably 1.6 or more and 15 or less, still more preferably 2.0 or more and 10 or less, still more preferably 2.2 or more and 7 or less, still more preferably 2.4 or more. 5 or less.
本發明之附載體銅箔於粗化處理層中,較佳為粗化粒子之平均長度之最大值與最小值的差除以粗化粒子之平均長度的平均值所得之值C{C=粗化粒子之平均長度之最大值與最小值的差(μm)/粗化粒子之平均長度的平均值(μm)}為0.5以下。藉由此種構成,具有蝕刻因數之不均(標準偏差)變小之效果。該值C更佳為0.48以下,更佳為0.45以下,進而更佳為0.4以下。該值C之下限無需特別設置,典型而言為0.001以上,或0.01以上,或0.05以上。 In the copper foil with carrier of the present invention, the difference between the maximum value and the minimum value of the average length of the roughened particles is divided by the average value of the average length of the roughened particles in the roughened layer C{C=rough The difference between the maximum value and the minimum value of the average length of the particles (μm) / the average value (μm) of the average length of the roughened particles is 0.5 or less. With such a configuration, there is an effect that the unevenness (standard deviation) of the etching factor becomes small. The value C is more preferably 0.48 or less, still more preferably 0.45 or less, and still more preferably 0.4 or less. The lower limit of the value C need not be particularly set, and is typically 0.001 or more, or 0.01 or more, or 0.05 or more.
本發明之附載體銅箔於粗化處理層中,較佳為粗化粒子之平均長度與上述粗化粒子之平均直徑之比之最大值與上述比之最小值的差除以上述粗化粒子之平均長度與上述粗化粒子之平均直徑之比的平均值B所得之值D{D=粗化粒子之平均長度與上述粗化粒子之平均直徑之比之最大值與上述比之最小值的差/B}為0.4以下。藉由此種構成,具有蝕刻因數之不均變小之效果。該值D更佳為0.38以下,進而更佳為0.35以下,進而更佳為0.3以下。該值D之下限無需特別設置,典型而言為0.001以上,或0.01以上,或0.05以上。 In the roughened layer of the copper foil of the present invention, the difference between the maximum value of the ratio of the average length of the roughened particles to the average diameter of the roughened particles and the minimum value of the ratio is divided by the coarse particles. a value obtained by the average value B of the ratio of the average length to the average diameter of the roughened particles D{D=the maximum value of the ratio of the average length of the roughened particles to the average diameter of the roughened particles and the minimum value of the above ratio The difference /B} is 0.4 or less. With such a configuration, there is an effect that the unevenness of the etching factor becomes small. The value D is more preferably 0.38 or less, still more preferably 0.35 or less, still more preferably 0.3 or less. The lower limit of the value D need not be particularly set, and is typically 0.001 or more, or 0.01 or more, or 0.05 or more.
本發明之附載體銅箔較佳為於在極薄銅層表面具有粗化處理層,且於粗化處理層上積層樹脂層後,將載體及中間層自極薄銅層剝離,其後藉由蝕刻除去極薄銅層之情形時,在積層於粗化處理層上之樹脂層之積層於粗化處理層上之側的表面,具有轉印粗化處理層之表面之凹凸而成 之凹凸的樹脂層表面之孔所占面積總和的平均值為20%以上,孔所占面積總和之最大值與孔所占面積總和之最小值的差除以孔所占面積總和的平均值所得之值E為0.6以下。藉由此種構成,具有蝕刻因數之不均變小之效果。又,具有樹脂與極薄銅層之剝離強度提高且剝離強度之不均變小之效果。該具有轉印粗化處理層之表面之凹凸而成之凹凸的樹脂層表面之孔所占面積總和的平均值更佳為25%以上,進而較佳為30%以上,進而更佳為35%以上,進而更佳為40%以上,進而更佳為45%以上,進而更佳為50%以上。該平均值之上限無需特別設置,典型而言為99%以下,或97%以下,或96%以下。又,該值E更佳為0.55以下,進而更佳為0.50以下,進而更佳為0.45以下,進而更佳為0.40以下。該值E之下限無需特別設置,典型而言為0.001以上,或0.01以上,或0.05以上。 Preferably, the copper foil with a carrier of the present invention has a roughened layer on the surface of the ultra-thin copper layer, and after the resin layer is laminated on the roughened layer, the carrier and the intermediate layer are peeled off from the ultra-thin copper layer, and then borrowed. When the ultra-thin copper layer is removed by etching, the surface of the resin layer laminated on the roughened layer on the side of the roughened layer has the unevenness of the surface of the roughened layer. The average value of the total area of the pores on the surface of the resin layer of the unevenness is 20% or more, and the difference between the maximum value of the total area of the pores and the minimum of the total area of the pores is divided by the average of the total area of the pores. The value E is 0.6 or less. With such a configuration, there is an effect that the unevenness of the etching factor becomes small. Further, there is an effect that the peel strength of the resin and the ultra-thin copper layer is improved and the unevenness of the peel strength is small. The average value of the total area of the pores on the surface of the resin layer having the unevenness of the surface of the roughened layer is preferably 25% or more, more preferably 30% or more, and still more preferably 35%. The above is more preferably 40% or more, still more preferably 45% or more, and still more preferably 50% or more. The upper limit of the average value need not be specifically set, and is typically 99% or less, or 97% or less, or 96% or less. Further, the value E is more preferably 0.55 or less, still more preferably 0.50 or less, still more preferably 0.45 or less, still more preferably 0.40 or less. The lower limit of the value E need not be particularly set, and is typically 0.001 or more, or 0.01 or more, or 0.05 or more.
又,本發明之附載體銅箔較佳為具有粗化處理層之面之表面粗糙度Rz(十點平均粗糙度(JIS B0601 1994))為0.15μm以上且3.0μm以下。若表面粗糙度Rz小於0.15μm,則存在剝離強度極端劣化之情形。於表面粗糙度Rz大於3.0μm之情形時,存在蝕刻因數變大之情形。表面粗糙度Rz較佳為0.2μm以上且2.5μm以下,更佳為0.3μm以上且2.0μm以下,更佳為0.35μm以上且1.5μm以下,更佳為0.4μm以上且1.3μm以下,更佳為0.4μm以上且1.0μm以下,更佳為0.45μm以上且1.0μm以下。 Further, the copper foil with a carrier of the present invention preferably has a surface roughness Rz (ten-point average roughness (JIS B0601 1994)) having a surface of the roughened layer of 0.15 μm or more and 3.0 μm or less. When the surface roughness Rz is less than 0.15 μm, the peel strength is extremely deteriorated. When the surface roughness Rz is more than 3.0 μm, there is a case where the etching factor becomes large. The surface roughness Rz is preferably 0.2 μm or more and 2.5 μm or less, more preferably 0.3 μm or more and 2.0 μm or less, more preferably 0.35 μm or more and 1.5 μm or less, still more preferably 0.4 μm or more and 1.3 μm or less, and more preferably It is 0.4 μm or more and 1.0 μm or less, more preferably 0.45 μm or more and 1.0 μm or less.
本發明之附載體銅箔可採用於載體之其中一面依序具備中間層、極薄銅層及粗化處理層,且於載體之另一面具有粗化處理層之構成。 The copper foil with a carrier of the present invention may have an intermediate layer, an extremely thin copper layer and a roughened layer on one side of the carrier, and a roughened layer on the other side of the carrier.
<附載體銅箔> <With carrier copper foil>
附載體銅箔具備上述之載體、形成於載體上之中間層、積層於中間層 上之極薄銅層及形成於極薄銅層上之粗化處理層。附載體銅箔本身之使用方法為業者所周知,例如可將極薄銅層之表面貼合於紙基材酚樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布-紙複合基材環氧樹脂、玻璃布-玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂、聚酯膜、聚醯亞胺膜、液晶聚合物(LCP)膜、氟樹脂膜等絕緣基板上並熱壓接後剝離載體,於接著於絕緣基板之極薄銅層表面之未設置配線之部分設置鍍敷阻劑後,藉由鍍敷設置配線,然後除去鍍敷阻劑,其後藉由蝕刻除去未設置配線之部分之極薄銅箔,藉此最終製造印刷配線板。於為本發明之附載體銅箔之情形時,剝離部位主要為載體與中間層之界面或中間層與極薄銅層之界面。又,於中間層由多層構成之情形時,存在於該多層之界面處進行剝離之情形。 The carrier copper foil is provided with the above carrier, an intermediate layer formed on the carrier, and laminated on the intermediate layer An extremely thin copper layer and a roughened layer formed on the extremely thin copper layer. The method of using the carrier copper foil itself is well known. For example, the surface of the ultra-thin copper layer can be bonded to the paper substrate phenol resin, paper substrate epoxy resin, synthetic fiber cloth substrate epoxy resin, glass cloth - Paper composite substrate epoxy resin, glass cloth-glass non-woven composite substrate epoxy resin and glass cloth substrate epoxy resin, polyester film, polyimide film, liquid crystal polymer (LCP) film, fluororesin film, etc. After the thermal insulating material is bonded to the insulating substrate, the carrier is peeled off, and then a plating resist is provided on a portion of the surface of the ultra-thin copper layer of the insulating substrate where no wiring is provided, and then wiring is provided by plating, and then the plating resist is removed. Thereafter, an extremely thin copper foil in which no wiring is provided is removed by etching, thereby finally producing a printed wiring board. In the case of the copper foil with carrier of the present invention, the peeling site is mainly the interface between the carrier and the intermediate layer or the interface between the intermediate layer and the ultra-thin copper layer. Further, in the case where the intermediate layer is composed of a plurality of layers, there is a case where peeling occurs at the interface of the plurality of layers.
<附載體銅箔之製造方法> <Method for Producing Carrier Copper Foil>
於本發明之附載體銅箔之製造方法中,使用由含有硫酸烷基酯系陰離子界面活性劑之硫酸及硫酸銅所構成之電解浴,於極薄銅層之表面形成由銅之粗化粒子所構成之粗化處理層。界面活性劑作為鍍敷之添加劑而於工業上廣泛使用。然而,於附載體銅箔之極薄銅層之粗化處理所使用之電解液中,不存在添加界面活性劑之例,進而欲藉此提高接著強度之技術從無先例。可確認本案發明所使用之硫酸烷基酯系陰離子界面活性劑對附載體銅箔賦予顯著之剝離強度之提高。該硫酸烷基酯系陰離子界面活性劑之效果目前尚無法明確付諸理論,可認為本界面活性劑之親水基以某種形式配位於電解液中之Cu離子上,或界面活性劑分子吸附於被電鍍面之特定部位,由此粗化粒子電鍍形態發生變化。其結果為,認為電流向具有凹凸之 極薄銅層之被電鍍面的凸部之集中得以抑制,通常粗化粒子難以電鍍之凹部(一次粒子之谷部)亦得以均勻電鍍,除此以外,極薄銅層之被電鍍面與經電鍍之粗化粒子之密接性提高。其結果為,極薄銅層與印刷配線板用樹脂基材等樹脂基材之間之剝離強度提高。又,於在將極薄銅層之具有粗化處理層之表面積層於樹脂基材後,藉由蝕刻將該極薄銅層全部除去之情形時,由欲轉印至樹脂基材之粗化粒子之凹凸而得之孔之面積率的平均值成為適當之值。其結果為,於轉印有該粗化粒子之凹凸之樹脂基材表面設置有無電鍍層或電鍍層之情形時,樹脂基材與無電鍍層及/或電鍍層之密接力提高。 In the method for producing a copper foil with a carrier according to the present invention, an electrolytic bath composed of sulfuric acid and copper sulfate containing an alkyl sulfate-based anionic surfactant is used to form roughened particles of copper on the surface of the ultra-thin copper layer. The roughened layer is formed. Surfactants are widely used industrially as additives for plating. However, in the electrolytic solution used for the roughening treatment of the ultra-thin copper layer with the carrier copper foil, there is no example of adding a surfactant, and there is no precedent for the technique for improving the bonding strength. It was confirmed that the alkyl sulfate-based anionic surfactant used in the invention of the present invention imparts significant peel strength to the copper foil with a carrier. The effect of the alkyl sulfate-based anionic surfactant has not yet been clearly put into theory. It can be considered that the hydrophilic group of the surfactant is disposed in some form on the Cu ion in the electrolyte, or the surfactant molecule is adsorbed on the surfactant. The specific portion of the surface to be plated changes the plated morphology of the roughened particles. As a result, it is considered that the current is convex and concave. The concentration of the convex portion of the plated surface of the extremely thin copper layer is suppressed, and the concave portion (the valley portion of the primary particles) which is difficult to be plated by the roughened particles is generally uniformly plated, and the plated surface and the plated surface of the extremely thin copper layer are otherwise The adhesion of the roughened particles of the plating is improved. As a result, the peel strength between the ultra-thin copper layer and the resin substrate such as the resin substrate for a printed wiring board is improved. Further, when the surface layer having the roughened layer of the ultra-thin copper layer is laminated on the resin substrate, and the ultra-thin copper layer is completely removed by etching, the roughening is performed by the resin substrate to be transferred. The average value of the area ratio of the pores obtained by the unevenness of the particles becomes an appropriate value. As a result, when an electroless plating layer or a plating layer is provided on the surface of the resin substrate on which the unevenness of the roughened particles is transferred, the adhesion between the resin substrate and the electroless plating layer and/or the plating layer is improved.
上述界面活性劑之濃度較佳為2~100mg/l。高於該範圍之濃度亦表現同樣之效果,但由界面活性劑之添加引起之電解液之發泡變得顯著,實際操作變得困難。為低於該範圍之濃度時,存在粗化處理粒子之平均直徑之不均變大之情形。又,於粗化處理電解浴中,除上述界面活性劑以外,藉由將鎢離子及/或砷離子添加至粗化處理電解浴中,可減小粗化粒子之平均直徑,其結果為,可提高銅箔與樹脂基材之間之密接性(剝離強度)。由此,可獲得極薄銅層與樹脂之密接性(剝離強度)經提高之附載體銅箔。又,藉由將附載體銅箔之粗化處理層之凹凸轉印至樹脂,可獲得能提高樹脂與無電鍍或電鍍之密接力之附載體銅箔。 The concentration of the above surfactant is preferably from 2 to 100 mg/l. A concentration higher than this range also exhibits the same effect, but foaming of the electrolytic solution caused by the addition of the surfactant becomes remarkable, and practical operation becomes difficult. When the concentration is less than the range, there is a case where the unevenness of the average diameter of the roughened particles becomes large. Further, in the roughening treatment electrolytic bath, in addition to the above-mentioned surfactant, by adding tungsten ions and/or arsenic ions to the roughening electrolytic bath, the average diameter of the roughened particles can be reduced, and as a result, The adhesion (peeling strength) between the copper foil and the resin substrate can be improved. Thereby, the copper foil with a carrier which improves the adhesiveness (peeling strength) of the ultra-thin copper layer and resin is obtained. Further, by transferring the unevenness of the roughened layer of the carrier-attached copper foil to the resin, a copper foil with a carrier which can improve the adhesion between the resin and electroless plating or electroplating can be obtained.
本發明之典型之粗化處理條件如以下所述。 Typical roughening treatment conditions of the present invention are as follows.
(液體組成1) (liquid composition 1)
Cu:5~30g/L(以硫酸銅五水合物之形式添加,下同) Cu: 5~30g/L (added in the form of copper sulfate pentahydrate, the same below)
H2SO4:10~200g/L H 2 SO 4 : 10~200g/L
十二基硫酸鈉:2~100mg/l Sodium dodecyl sulfate: 2~100mg/l
再者,只要無明確說明,則用於本發明之表面處理或鍍敷等所使用之處理液之餘量為水。 In addition, unless otherwise indicated, the balance of the treatment liquid used for surface treatment, plating, etc. of this invention is water.
(電鍍條件) (plating conditions)
溫度:60~70℃ Temperature: 60~70°C
電流密度:21~39A/dm2(為浴之極限電流密度以上) Current density: 21~39A/dm 2 (above the limit current density of the bath)
粗化處理時間:1~20秒 Roughening processing time: 1~20 seconds
通電量:21~600As/dm2 Power consumption: 21~600As/dm 2
鍍敷液線性流速:1.5~3.0m/s Linear flow rate of plating solution: 1.5~3.0m/s
再者,本案中藉由使粗化處理中之鍍敷液之線性流速高於先前,使鍍敷液溫度高於先前,且將電流密度與粗化處理時間設為特定之範圍,而成功製造粗化粒子之粒徑或長度之不均小於先前之附載體銅箔。該理由尚不明確,可認為一個因素係藉由設為上述條件,Cu離子之物質移動速度提高。 Furthermore, in the present case, the linear flow rate of the plating solution in the roughening treatment is made higher than the previous one, the plating solution temperature is higher than the previous one, and the current density and the roughening treatment time are set to a specific range, and the manufacturing is successful. The unevenness of the particle size or length of the roughened particles is smaller than that of the prior carrier copper foil. This reason is not clear, and it is considered that one factor is that the material moving speed of Cu ions is improved by setting the above conditions.
除上述液體組成1以外,添加以下之As成分及W成分中任一者或兩者。 In addition to the above liquid composition 1, one or both of the following As and W components are added.
(選擇性液體組成2) (selective liquid composition 2)
As:350~2000mg/l As: 350~2000mg/l
W(以鎢酸鹽進行添加):1~10mg/l W (added with tungstate): 1~10mg/l
進而,為了防止粗化粒子脫落及提高剝離強度,而利用由硫酸-硫酸銅所構成之電解浴於粗化處理層上進行覆鍍處理。進而可於其上形成含有選自鋅、鎳、銅及磷中之至少一種以上之元素之耐熱、防銹層。又,可於耐熱、防銹層上形成鉻酸鹽處理層,進而可於鉻酸鹽處理層上形 成矽烷偶合處理層。作為與本發明組合之覆鍍處理、耐熱、防銹處理、鉻酸鹽處理、矽烷偶合劑,可使用習知之耐熱、防銹層。 Further, in order to prevent the coarse particles from falling off and to improve the peel strength, a plating treatment is performed on the roughened layer by an electrolytic bath composed of sulfuric acid-copper sulfate. Further, a heat-resistant and rust-preventive layer containing at least one element selected from the group consisting of zinc, nickel, copper, and phosphorus may be formed thereon. Moreover, a chromate treatment layer can be formed on the heat-resistant and rust-proof layer, and further formed on the chromate treatment layer The decane coupling treatment layer. As the plating treatment, heat resistance, rust prevention treatment, chromate treatment, and decane coupling agent combined with the present invention, a conventional heat-resistant and rust-preventive layer can be used.
覆鍍處理之處理條件如以下所述。再者,鍍敷液並無特別限制,可使用公知之鍍敷液。將具體例示於以下。 The processing conditions of the plating treatment are as follows. Further, the plating solution is not particularly limited, and a known plating solution can be used. Specific examples will be given below.
(液體組成) (liquid composition)
Cu:70~100g/l(以硫酸銅五水合物之形式添加) Cu: 70~100g/l (added as copper sulfate pentahydrate)
H2SO4:50~150g/l H 2 SO 4 : 50~150g/l
(液溫) (liquid temperature)
50~70℃ 50~70°C
(電流條件) (current condition)
電流密度:12~37A/dm2(為浴之極限電流密度以下) Current density: 12~37A/dm 2 (below the limit current density of the bath)
鍍敷時間:2~20秒 Plating time: 2~20 seconds
鍍敷液線性流速:1.5~3.0m/s Linear flow rate of plating solution: 1.5~3.0m/s
再者,本案中藉由使覆鍍處理中之鍍敷液之線性流速高於先前,使鍍敷液溫度高於先前,使Cu濃度高於先前,將電流密度與粗化處理時間設為特定之範圍,而成功製造粗化粒子之粒徑或長度之不均小於先前之附載體銅箔。該理由尚不明確,可認為一個因素係藉由設為上述條件,Cu離子之物質移動速度提高。 Furthermore, in the present case, by making the linear flow rate of the plating solution in the plating process higher than before, the plating solution temperature is higher than before, the Cu concentration is higher than before, and the current density and the roughening processing time are made specific. The range, and the unevenness in the particle size or length of the successfully produced roughened particles is smaller than that of the prior carrier copper foil. This reason is not clear, and it is considered that one factor is that the material moving speed of Cu ions is improved by setting the above conditions.
作為設置於粗化處理層之表面之耐熱、防銹層,並無特別限制,可使用公知之處理。 The heat-resistant and rust-preventing layer provided on the surface of the roughening treatment layer is not particularly limited, and a known treatment can be used.
例如可利用鎳、鈷、銅、鋅之單質或含有選自鎳、鈷、銅、鋅之群中之一種以上之元素之合金等於粗化處理層之表面形成耐熱層或防銹層,進 而可對該表面實施鉻酸鹽處理、矽烷偶合處理等處理。 For example, an elemental alloy of nickel, cobalt, copper, or zinc or an element containing one or more elements selected from the group consisting of nickel, cobalt, copper, and zinc may be used to form a heat-resistant layer or a rust-proof layer on the surface of the roughened layer. Further, the surface may be subjected to a treatment such as chromate treatment or decane coupling treatment.
進而可對該表面實施鉻酸鹽處理、矽烷偶合處理等處理。即,可於粗化處理層之表面形成選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之1種以上之層。 Further, the surface may be subjected to a treatment such as chromate treatment or decane coupling treatment. In other words, one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventive layer, a chromate-treated layer, and a decane coupling treatment layer may be formed on the surface of the roughened layer.
再者,上述之耐熱層、防銹層、鉻酸鹽處理層、矽烷偶合處理層可分別以多層形成(例如2層以上、3層以上等)。 Further, the heat-resistant layer, the rust-preventing layer, the chromate-treated layer, and the decane coupling treatment layer may be formed in a plurality of layers (for example, two or more layers, three or more layers, or the like).
例如,對於印刷配線板用銅箔,可使用黃銅被覆層作為先前所使用之耐熱層或防銹層。將具體例示於以下。 For example, for the copper foil for printed wiring boards, a brass coating layer can be used as the heat-resistant layer or the rust-preventive layer previously used. Specific examples will be given below.
(液體組成) (liquid composition)
NaOH:40~200g/l NaOH: 40~200g/l
NaCN:70~250g/l NaCN: 70~250g/l
CuCN:50~200g/l CuCN: 50~200g/l
Zn(CN)2:2~100g/l Zn(CN) 2 : 2~100g/l
As2O3:0.01~1g/l As 2 O 3 : 0.01~1g/l
(液溫) (liquid temperature)
40~90℃ 40~90°C
(電流條件) (current condition)
電流密度:1~50A/dm2 Current density: 1~50A/dm 2
鍍敷時間:1~20秒 Plating time: 1~20 seconds
鉻酸鹽處理層可使用電解鉻酸鹽處理層或浸漬鉻酸鹽處理層。該鉻酸鹽處理層較理想為Cr量為25~150μg/dm2。於Cr量未達25μg/dm2時,存在不產生防銹層效果之可能性。又,若Cr量超過150μg/dm2, 則存在效果飽和之可能性。又,於鉻酸鹽處理層中亦可含有Zn等Cr以外之元素。以下記載用以形成鉻酸鹽處理層之條件之例。然而,無需限定於該條件,可使用任意已公知之鉻酸鹽處理。該防銹處理係對耐酸性造成影響之因素之一,藉由鉻酸鹽處理,耐酸性進一步提高。 The chromate treatment layer may use an electrolytic chromate treatment layer or a dip chromate treatment layer. The chromate treatment layer preferably has a Cr content of 25 to 150 μg/dm 2 . When the amount of Cr is less than 25 μg/dm 2 , there is a possibility that the effect of the rust preventive layer is not generated. Further, when the amount of Cr exceeds 150 μg/dm 2 , there is a possibility that the effect is saturated. Further, an element other than Cr such as Zn may be contained in the chromate-treated layer. An example of the conditions for forming a chromate treatment layer is described below. However, it is not necessary to be limited to this condition, and any known chromate treatment can be used. The rust-preventing treatment is one of the factors affecting the acid resistance, and the acid resistance is further improved by the chromate treatment.
(浸漬鉻酸鹽處理) (impregnated chromate treatment)
K2Cr2O7:1~5g/l、pH:2.5~5.5、溫度:25~60℃、時間:0.5~8秒 K 2 Cr 2 O 7 : 1~5g/l, pH: 2.5~5.5, temperature: 25~60°C, time: 0.5~8 seconds
(電解鉻、鋅處理) (electrolytic chromium, zinc treatment)
K2Cr2O7(Na2Cr2O7或CrO3):2~10g/l、ZnOH或ZnSO4.7H2O:0.05~10g/l、pH:2.5~5.5、浴溫:20~80℃、電流密度:0.05~5A/dm2、時間:0.1~10秒 K 2 Cr 2 O 7 (Na 2 Cr 2 O 7 or CrO 3 ): 2-10 g/l, ZnOH or ZnSO 4 . 7H 2 O: 0.05~10g/l, pH: 2.5~5.5, bath temperature: 20~80°C, current density: 0.05~5A/dm 2 , time: 0.1~10 seconds
作為本發明之附載體銅箔所使用之矽烷偶合劑,可使用通常用於銅箔之任意之矽烷偶合劑,並無特別限制。例如,作為矽烷偶合劑處理,可將0.2%環氧矽烷水溶液噴淋至銅箔粗化面上後,將其乾燥而進行。矽烷偶合劑之選擇為任意,較理想為考慮和與極薄銅層進行積層之樹脂基材之親和性之選擇。 As the decane coupling agent used in the copper foil with a carrier of the present invention, any decane coupling agent which is usually used for the copper foil can be used without particular limitation. For example, as a decane coupling agent treatment, a 0.2% epoxy decane aqueous solution can be sprayed onto the roughened surface of the copper foil, and then dried. The choice of the decane coupling agent is arbitrary, and it is preferable to consider the affinity with the resin substrate laminated with the ultra-thin copper layer.
附載體銅箔於極薄銅層上所形成之粗化處理層上,可具備一層以上選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之層。又,於上述粗化處理層上亦可具備樹脂層。 The carrier-coated copper foil may have one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventing layer, a chromate-treated layer, and a decane coupling treatment layer on the roughened layer formed on the ultra-thin copper layer. Further, a resin layer may be provided on the roughened layer.
又,於上述粗化處理層上亦可具備耐熱層、防銹層,於上述耐熱層、防銹層上亦可具備鉻酸鹽處理層,於上述鉻酸鹽處理層上亦可具備矽烷偶合處理層。又,於上述選自由耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中之1種以上之層上亦可具備樹脂層。 Further, the heat-treated layer and the rust-preventing layer may be provided on the roughened layer, and a chromate-treated layer may be provided on the heat-resistant layer or the rust-preventing layer, and a decane coupling may be provided on the chromate-treated layer. Processing layer. Further, a resin layer may be provided on one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventing layer, a chromate-treated layer, and a decane coupling treatment layer.
上述樹脂層可為接著劑,亦可為接著用之半硬化狀態(B階段狀態)之絕緣樹脂層。所謂半硬化狀態(B階段狀態),包括如下狀態:即便以手指接觸其表面亦無黏著感,可將該絕緣樹脂層重合保管,若進一步受到加熱處理,則會引起硬化反應。 The resin layer may be an adhesive or an insulating resin layer which is used in a semi-hardened state (B-stage state). The semi-hardened state (B-stage state) includes a state in which the insulating resin layer can be stored in a superposed manner even if the surface is not in contact with the finger, and the insulating resin layer can be stored in a superposed manner.
又,上述樹脂層亦可為底塗層。於本發明中,所謂「底塗層」,表示可使無電解鍍銅層與樹脂基材特別牢固地接著之樹脂層。又,上述樹脂層亦可為嵌段共聚聚醯亞胺樹脂層或含有嵌段共聚聚醯亞胺樹脂與聚順丁烯二醯亞胺化合物之樹脂層。 Further, the resin layer may be an undercoat layer. In the present invention, the "undercoat layer" means a resin layer which allows the electroless copper plating layer and the resin substrate to be particularly firmly adhered. Further, the resin layer may be a block copolymerized polyimide resin layer or a resin layer containing a block copolymerized polyimide resin and a polysynyleneimine compound.
例如,嵌段共聚聚醯亞胺為如下所示之通式(1):通式(2)=3:2,為數量平均分子量:70000、重量平均分子量:150000。 For example, the block copolymerized polyimine is represented by the following formula (1): general formula (2) = 3:2, and has a number average molecular weight: 70,000 and a weight average molecular weight: 150,000.
又,例如作為聚順丁烯二醯亞胺化合物,可列舉雙(4-順丁烯二醯亞胺苯基)甲烷(BMI-H,K-I化成)。 Further, examples of the polym-butylene iminoimide compound include bis(4-maleoximeimidephenyl)methane (BMI-H, K-I formation).
又,上述樹脂層可含有熱硬化性樹脂,亦可為熱塑性樹脂。又,上述樹脂層亦可含有熱塑性樹脂。其種類並無特別限定,例如可列舉含有環氧樹脂、聚醯亞胺樹脂、多官能性氰酸酯化合物、順丁烯二醯亞胺 化合物、聚乙烯醇縮醛樹脂、胺基甲酸酯樹脂等之樹脂作為較佳者。 Further, the resin layer may contain a thermosetting resin or a thermoplastic resin. Further, the resin layer may contain a thermoplastic resin. The type thereof is not particularly limited, and examples thereof include an epoxy resin, a polyimide resin, a polyfunctional cyanate compound, and maleimide. A resin such as a compound, a polyvinyl acetal resin or a urethane resin is preferable.
上述樹脂層可含有公知之樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體(可使用含有無機化合物及/或有機化合物之介電體、含有金屬氧化物之介電體等任何介電體)、反應觸媒、交聯劑、聚合物、預浸體、骨架材料等。又,上述樹脂層例如可使用於國際公開號WO2008/004399號、國際公開號WO2008/053878、國際公開號WO2009/084533、日本特開平11-5828號、日本特開平11-140281號、日本專利第3184485號、國際公開號WO97/02728、日本專利第3676375號、日本特開2000-43188號、日本專利第3612594號、日本特開2002-179772號、日本特開2002-359444號、日本特開2003-304068號、日本專利第3992225號、日本特開2003-249739號、日本專利第4136509號、日本特開2004-82687號、日本專利第4025177號、日本特開2004-349654號、日本專利第4286060號、日本特開2005-262506號、日本專利第4570070號、日本特開2005-53218號、日本專利第3949676號、日本專利第4178415號、國際公開號WO2004/005588、日本特開2006-257153號、日本特開2007-326923號、日本特開2008-111169號、日本專利第5024930號、國際公開號WO2006/028207、日本專利第4828427號、日本特開2009-67029號、國際公開號WO2006/134868、日本專利第5046927號、日本特開2009-173017號、國際公開號WO2007/105635、日本專利第5180815號、國際公開號WO2008/114858、國際公開號WO2009/008471、日本特開2011-14727號、國際公開號WO2009/001850、國際公開號WO2009/145179、國際公開號WO2011/068157、日本特開2013-19056號中所記載之物質(樹脂、樹脂硬化劑、化合物、硬化促進劑、介電 體、反應觸媒、交聯劑、聚合物、預浸體、骨架材料等)及/或樹脂層之形成方法、形成裝置而形成。 The resin layer may contain a known resin, a resin curing agent, a compound, a curing accelerator, and a dielectric (any dielectric containing an inorganic compound and/or an organic compound, a dielectric containing a metal oxide, or the like may be used. Body), reaction catalyst, crosslinking agent, polymer, prepreg, framework material, and the like. Further, the above-mentioned resin layer can be used, for example, in International Publication No. WO2008/004399, International Publication No. WO2008/053878, International Publication No. WO2009/084533, Japanese Patent Laid-Open No. Hei No. Hei No. Hei No. Hei No. Hei. Japanese Patent No. 3,184,485, International Publication No. WO97/02728, Japanese Patent No. 3676375, Japanese Patent Laid-Open No. 2000-43188, Japanese Patent No. 3612594, Japanese Patent Laid-Open No. 2002-179772, Japanese Patent Laid-Open No. 2002-359444, Japanese Patent Laid-Open No. 2003 -304068, Japanese Patent No. 3992225, Japanese Patent Laid-Open No. 2003-249739, Japanese Patent No. 4136509, Japanese Patent Laid-Open No. 2004-82687, Japanese Patent No. 4025177, Japanese Patent Laid-Open No. 2004-349654, Japanese Patent No. 4286060 No. 2005-262506, Japanese Patent No. 4570070, Japanese Patent Laid-Open No. 2005-53218, Japanese Patent No. 3949676, Japanese Patent No. 4178415, International Publication No. WO2004/005588, Japanese Patent Publication No. 2006-257153 , Japanese Patent Laid-Open No. 2007-326923, Japanese Patent Laid-Open No. 2008-111169, Japanese Patent No. 5024930, International Publication No. WO2006/028207, Japanese Patent No. 4828427, Japanese Patent Laid-Open No. 2009-67029, International The opening number is WO2006/134868, Japanese Patent No. 5046927, Japanese Patent Laid-Open No. 2009-173017, International Publication No. WO2007/105635, Japanese Patent No. 5180815, International Publication No. WO2008/114858, International Publication No. WO2009/008471, Japan Special Opening Substances (resin, resin hardener, compound, hardening accelerator) described in No. 2011-14727, International Publication No. WO2009/001850, International Publication No. WO2009/145179, International Publication No. WO2011/068157, and Japanese Patent Laid-Open No. 2013-19056 Dielectric Formed by a method of forming a body, a reaction catalyst, a crosslinking agent, a polymer, a prepreg, a skeleton material, and the like, and/or a resin layer.
將該等樹脂溶解於例如甲基乙基酮(MEK)、甲苯等溶劑中製成樹脂液,藉由例如輥塗法等將其塗佈於上述極薄銅層上、或上述耐熱層、防銹層、或上述鉻酸鹽處理層、或上述矽烷偶合處理層上,繼而視需要進行加熱乾燥,除去溶劑而製成B階段狀態。乾燥例如使用熱風乾燥爐即可,乾燥溫度為100~250℃、較佳為130~200℃即可。 The resin is dissolved in a solvent such as methyl ethyl ketone (MEK) or toluene to prepare a resin liquid, which is applied onto the ultra-thin copper layer, or the heat-resistant layer, by, for example, a roll coating method. The rust layer or the chromate-treated layer or the decane coupling treatment layer is then heated and dried as necessary to remove the solvent to form a B-stage state. Drying may be carried out, for example, using a hot air drying oven, and the drying temperature may be 100 to 250 ° C, preferably 130 to 200 ° C.
具備上述樹脂層之附載體銅箔(附樹脂之附載體銅箔)係以如下態樣而使用:將其樹脂層重合於基材上後,將整體熱壓接而使該樹脂層熱硬化,繼而將載體剝離而露出極薄銅層(當然露出者係該極薄銅層之中間層側之表面),於其上形成特定之配線圖案。 The copper foil with a carrier (the copper foil with a resin) which has the above-mentioned resin layer is used in the following aspect: after superposing the resin layer on the base material, the whole resin layer is thermo-compressed, and the resin layer is thermally hardened. Then, the carrier is peeled off to expose an extremely thin copper layer (of course, the surface of the intermediate layer side of the extremely thin copper layer is exposed), and a specific wiring pattern is formed thereon.
若使用該附樹脂之附載體銅箔,可減少製造多層印刷配線基板時之預浸材料之使用塊數。並且使樹脂層之厚度成為可確保層間絕緣之厚度,即便完全不使用預浸材料亦可製造覆銅積層板。又,此時,亦可於基材之表面底塗絕緣樹脂而進一步改善表面之平滑性。 When the copper foil with a carrier attached to the resin is used, the number of used prepreg materials for manufacturing the multilayer printed wiring board can be reduced. Further, the thickness of the resin layer is such that the thickness of the interlayer insulation can be ensured, and the copper clad laminate can be produced without using the prepreg material at all. Further, at this time, the surface of the substrate may be primed with an insulating resin to further improve the smoothness of the surface.
再者,於不使用預浸材料之情形時,預浸材料之材料成本得以節約,且積層步驟亦變得簡略,故而於經濟方面變得有利,而且具有如下優點:所製造之多層印刷配線基板之厚度變薄相當於預浸材料之厚度之程度,可製造1層之厚度為100μm以下之極薄之多層印刷配線基板。 Further, when the prepreg material is not used, the material cost of the prepreg material is saved, and the lamination step is also simplified, which is economically advantageous, and has the following advantages: the multilayer printed wiring board manufactured The thickness of the prepreg is equivalent to the thickness of the prepreg, and it is possible to manufacture a very thin multilayer printed wiring board having a thickness of 100 μm or less.
該樹脂層之厚度較佳為0.1~80μm。 The thickness of the resin layer is preferably from 0.1 to 80 μm.
若樹脂層之厚度薄於0.1μm,則接著力降低,於不介置預浸材料而將該附樹脂之附載體銅箔積層於具備內層材料之基材上時,存在 變得難以確保內層材料之電路之間之層間絕緣之情形。 When the thickness of the resin layer is thinner than 0.1 μm, the adhesion force is lowered, and when the pre-impregnated material is not interposed, the copper foil with a carrier attached to the resin is laminated on the substrate having the inner layer material. It becomes difficult to ensure the interlayer insulation between the circuits of the inner layer material.
另一方面,若樹脂層之厚度厚於80μm,則變得難以以1次之塗佈步驟而形成目標厚度之樹脂層,會花費多餘之材料費及步驟數,故而於經濟方面變得不利。進而,所形成之樹脂層由於其可撓性差,故而存在如下情形:操作時容易產生龜裂等,且與內層材料熱壓接時引起過度之樹脂流動,順利之積層變得困難。 On the other hand, when the thickness of the resin layer is thicker than 80 μm, it becomes difficult to form the resin layer of the target thickness in the coating step once, and the extra material cost and the number of steps are required, which is disadvantageous in terms of economy. Further, since the resin layer to be formed is inferior in flexibility, cracks and the like are likely to occur during handling, and excessive resin flow occurs when the inner layer material is thermocompression bonded, and smooth laminate formation becomes difficult.
進而,作為該附樹脂之附載體銅箔之另一種製品形態,亦可以樹脂層被覆於上述極薄銅層之粗化處理層上、或粗化處理層上之上述耐熱層、防銹層、或上述鉻酸鹽處理層、或上述矽烷偶合處理層上,製成半硬化狀態後,繼而剝離載體,以不存在載體之附樹脂銅箔之形式製造。 Further, as another product form of the copper foil with a carrier to which the resin is attached, the resin layer may be coated on the roughened layer of the ultra-thin copper layer or the heat-resistant layer or the rust-preventing layer on the roughened layer. Alternatively, the chromate treatment layer or the decane coupling treatment layer is formed into a semi-hardened state, and then the carrier is peeled off and produced in the form of a resin-attached copper foil in the absence of a carrier.
<印刷配線板及覆銅積層板> <Printed wiring board and copper clad laminate>
將附載體銅箔自極薄銅層側貼附於絕緣樹脂板上並進行熱壓接,將載體剝離,藉此可製作覆銅積層板。又,其後,藉由對極薄銅層部分進行蝕刻,可形成印刷配線板之銅電路。此處所使用之絕緣樹脂板只要為具有可適用於印刷配線板之特性者,則不受特別限制,例如,剛性PWB用可使用紙基材酚樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布-紙複合基材環氧樹脂、玻璃布-玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂等,FPC用可使用聚酯膜或聚醯亞胺膜等。以上述方式製作之印刷配線板、覆銅積層板可搭載於要求搭載零件之高密度安裝之各種電子零件上。 The copper foil with a carrier is attached to the insulating resin plate from the side of the ultra-thin copper layer and thermocompression bonded, and the carrier is peeled off, whereby a copper clad laminate can be produced. Further, thereafter, the copper circuit of the printed wiring board can be formed by etching the extremely thin copper layer portion. The insulating resin sheet used herein is not particularly limited as long as it has characteristics suitable for a printed wiring board. For example, a rigid PWB can be used as a paper base phenol resin, a paper base epoxy resin, or a synthetic fiber base. Epoxy resin, glass cloth-paper composite substrate epoxy resin, glass cloth-glass non-woven composite substrate epoxy resin and glass cloth substrate epoxy resin, FPC can use polyester film or polyimide film Wait. The printed wiring board and the copper-clad laminate produced in the above manner can be mounted on various electronic components that are required to be mounted at high density.
<印刷配線板之製造方法> <Method of Manufacturing Printed Wiring Board>
於印刷配線板之製造方法之一實施形態中,包括如下步驟:準備本發 明之附載體銅箔與絕緣基板;積層上述附載體銅箔與絕緣基板;以極薄銅層側與絕緣基板相對向之方式積層上述附載體銅箔與絕緣基板後經過剝離上述附載體銅箔之載體之步驟而形成覆銅積層板,其後,藉由半加成法、改良型半加成法、部分加成法及減成法中之任一方法形成電路。亦可將絕緣基板製成含有內層電路者。 In one embodiment of the method for manufacturing a printed wiring board, the method includes the following steps: preparing the hair The carrier copper foil and the insulating substrate are provided; the copper foil and the insulating substrate are laminated; and the copper foil and the insulating substrate are laminated on the side of the ultra-thin copper layer and the insulating substrate, and then the copper foil with the carrier is peeled off. A copper clad laminate is formed by the step of the carrier, and thereafter, the circuit is formed by any one of a semi-additive method, a modified semi-additive method, a partial addition method, and a subtractive method. The insulating substrate can also be made to have an inner layer circuit.
於本發明中,所謂半加成法,係指於絕緣基板或銅箔籽晶層上進行薄之無電鍍而形成圖案後,利用電鍍及蝕刻而形成導體圖案之方法。 In the present invention, the semi-additive method refers to a method of forming a conductor pattern by electroplating and etching after patterning is performed on an insulating substrate or a copper foil seed layer by electroless plating.
因此,於使用半加成法之本發明之印刷配線板之製造方法的一實施形態中,包括如下步驟:準備本發明之附載體銅箔與絕緣基板;積層上述附載體銅箔與絕緣基板;於積層上述附載體銅箔與絕緣基板後剝離上述附載體銅箔之載體;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法將剝離上述載體而露出之極薄銅層全部除去;於藉由利用蝕刻除去上述極薄銅層而露出之上述樹脂上設置對穿孔(through hole)或/及盲孔;對包含上述對穿孔或/及盲孔之區域進行除膠渣處理;對上述樹脂及包含上述對穿孔或/及盲孔之區域設置無電鍍層;於上述無電鍍層上設置鍍敷阻劑;對上述鍍敷阻劑進行曝光,其後除去欲形成電路之區域之鍍敷阻劑;於除去上述鍍敷阻劑之上述欲形成電路之區域設置電鍍層;除去上述鍍敷阻劑;藉由閃蝕等除去處於上述欲形成電路之區域以外之區域之無電鍍層。 Therefore, in an embodiment of the method for producing a printed wiring board of the present invention using a semi-additive method, the method includes the steps of: preparing a copper foil and an insulating substrate with a carrier of the present invention; and laminating the copper foil and the insulating substrate with the carrier; After laminating the carrier-attached copper foil and the insulating substrate, the carrier with the carrier copper foil is peeled off; and the ultra-thin copper layer exposed by peeling off the carrier is removed by etching or plasma etching using an acid or the like; Providing a through hole or/and a blind hole in the resin exposed by removing the ultra-thin copper layer by etching; performing desmear treatment on the region including the above-mentioned pair of perforations or/and blind holes; The electroless plating layer is disposed on the region of the perforated or/and blind via hole; the plating resist is disposed on the electroless plating layer; the plating resist is exposed, and then the plating resist is removed from the region where the circuit is to be formed. Providing a plating layer in the region where the above-mentioned plating resist is removed to form a circuit; removing the plating resist; removing the region outside the region where the circuit is to be formed by flash etching or the like The electroless plating.
於使用半加成法之本發明之印刷配線板之製造方法的另一實施形態中,包括如下步驟:準備本發明之附載體銅箔與絕緣基板;積層上述附載體銅箔與絕緣基板;於積層上述附載體銅箔與絕緣基板後剝離上述附載體銅箔之載體;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法將剝離 上述載體而露出之極薄銅層全部除去;對藉由利用蝕刻除去上述極薄銅層而露出之上述樹脂之表面設置無電鍍層;於上述無電鍍層上設置鍍敷阻劑;對上述鍍敷阻劑進行曝光,其後除去欲形成電路之區域之鍍敷阻劑;於除去上述鍍敷阻劑之上述欲形成電路之區域設置電鍍層;除去上述鍍敷阻劑;藉由閃蝕等除去處於上述欲形成電路之區域以外之區域之無電鍍層及極薄銅層。 In another embodiment of the method for producing a printed wiring board of the present invention using a semi-additive method, the method includes the steps of: preparing a copper foil and an insulating substrate with a carrier of the present invention; and laminating the copper foil and the insulating substrate with the carrier; After laminating the above-mentioned carrier copper foil and the insulating substrate, the carrier with the carrier copper foil is peeled off; the peeling is performed by etching or plasma using an etching solution such as acid The ultra-thin copper layer exposed by the carrier is completely removed; an electroless plating layer is disposed on a surface of the resin exposed by removing the ultra-thin copper layer by etching; a plating resist is disposed on the electroless plating layer; The resisting agent is exposed, and then the plating resist is removed from the region where the circuit is to be formed; the plating layer is disposed in the region where the plating resist is removed to form the circuit; the plating resist is removed; by flashing, etc. The electroless plating layer and the ultra-thin copper layer in the region other than the region where the circuit is to be formed are removed.
於本發明中,所謂改良型半加成法,係指如下方法:於絕緣層上積層金屬箔,藉由鍍敷阻劑保護非電路形成部,藉由電鍍增大電路形成部之銅厚之後,除去鍍敷阻劑,藉由(閃速(flash))蝕刻除去上述電路形成部以外之金屬箔,藉此於絕緣層上形成電路。 In the present invention, the modified semi-additive method refers to a method of laminating a metal foil on an insulating layer, protecting a non-circuit forming portion by a plating resist, and increasing a copper thickness of the circuit forming portion by electroplating. The plating resist is removed, and the metal foil other than the circuit forming portion is removed by etching (flash) to form an electric circuit on the insulating layer.
因此,於使用改良型半加成法之本發明之印刷配線板之製造方法的一實施形態中,包括如下步驟:準備本發明之附載體銅箔與絕緣基板;積層上述附載體銅箔與絕緣基板;於積層上述附載體銅箔與絕緣基板後剝離上述附載體銅箔之載體;於剝離上述載體而露出之極薄銅層與絕緣基板上設置對穿孔或/及盲孔;對含有上述對穿孔或/及盲孔之區域進行除膠渣處理;對含有上述對穿孔或/及盲孔之區域設置無電鍍層;於剝離上述載體而露出之極薄銅層表面設置鍍敷阻劑;於設置上述鍍敷阻劑後,藉由電鍍而形成電路;除去上述鍍敷阻劑;藉由閃蝕除去藉由除去上述鍍敷阻劑而露出之極薄銅層。 Therefore, in an embodiment of the method of manufacturing a printed wiring board of the present invention using the improved semi-additive method, the method comprises the steps of: preparing a copper foil with an insulating substrate of the present invention and an insulating substrate; laminating the copper foil with the carrier and insulating the carrier a substrate; after laminating the carrier-attached copper foil and the insulating substrate, peeling off the carrier of the carrier-attached copper foil; and providing a pair of perforations or/and blind vias on the extremely thin copper layer and the insulating substrate exposed by peeling off the carrier; The area of the perforation or/and the blind hole is subjected to desmear treatment; the electroless plating layer is disposed on the region containing the perforation or/and the blind hole; and the plating resist is disposed on the surface of the extremely thin copper layer exposed by peeling off the carrier; After the plating resist is provided, a circuit is formed by electroplating; the plating resist is removed; and the ultra-thin copper layer exposed by removing the plating resist is removed by flash etching.
又,於上述樹脂層上形成電路之步驟亦可為自極薄銅層側將另一附載體銅箔貼合於上述樹脂層上,使用貼合於上述樹脂層上之附載體銅箔而形成上述電路之步驟。又,欲貼合於上述樹脂層上之另一附載體銅 箔可為本發明之附載體銅箔。又,於上述樹脂層上形成電路之步驟可藉由半加成法、減成法、部分加成法或改良型半加成法中之任一方法進行。又,上述表面形成電路之附載體銅箔可於該附載體銅箔之載體之表面含有基板或樹脂層。 Further, the step of forming a circuit on the resin layer may be performed by bonding another copper foil with a carrier to the resin layer from the side of the ultra-thin copper layer, and forming a copper foil with a carrier adhered to the resin layer. The steps of the above circuit. Further, another carrier copper to be attached to the above resin layer The foil may be a copper foil with a carrier of the present invention. Further, the step of forming a circuit on the above resin layer can be carried out by any one of a semi-additive method, a subtractive method, a partial addition method or a modified half-addition method. Further, the copper foil with a carrier on the surface forming circuit may include a substrate or a resin layer on the surface of the carrier of the copper foil with the carrier.
於使用改良型半加成法之本發明之印刷配線板之製造方法的另一實施形態中,包括如下步驟:準備本發明之附載體銅箔與絕緣基板;積層上述附載體銅箔與絕緣基板;於積層上述附載體銅箔與絕緣基板後剝離上述附載體銅箔之載體;於剝離上述載體而露出之極薄銅層上設置鍍敷阻劑;對上述鍍敷阻劑進行曝光,其後除去欲形成電路之區域之鍍敷阻劑;於除去上述鍍敷阻劑之上述欲形成電路之區域設置電鍍層;除去上述鍍敷阻劑;藉由閃蝕等除去處於上述欲形成電路之區域以外之區域之無電鍍層及極薄銅層。 In another embodiment of the method for producing a printed wiring board of the present invention using the modified semi-additive method, the method includes the steps of: preparing a copper foil with an insulating substrate of the present invention and an insulating substrate; and laminating the copper foil and the insulating substrate with the carrier After laminating the carrier-attached copper foil and the insulating substrate, the carrier with the carrier copper foil is peeled off; a plating resist is disposed on the extremely thin copper layer exposed by peeling off the carrier; and the plating resist is exposed, and thereafter Removing a plating resist in a region where the circuit is to be formed; providing a plating layer in the region where the plating resist is removed to form the circuit; removing the plating resist; removing the region in the circuit to be formed by flash etching or the like Electroless plating and ultra-thin copper layers in areas other than those.
於本發明中,所謂部分加成法,係指如下方法:對設置導體層而成之基板、視需要為穿設對穿孔或通孔(via hole)用之孔而成之基板上賦予觸媒核,進行蝕刻而形成導體電路,視需要而設置阻焊劑或鍍敷阻劑後,於上述導體電路上,藉由無電鍍處理對對穿孔或通孔等進行增厚,藉此製造印刷配線板。 In the present invention, the partial addition method refers to a method of providing a catalyst to a substrate on which a conductor layer is provided, and a substrate formed by piercing a hole for a via hole or a via hole as needed. The core is etched to form a conductor circuit, and if a solder resist or a plating resist is provided as needed, a via hole or a via hole is thickened by electroless plating on the conductor circuit, thereby manufacturing a printed wiring board. .
因此,於使用部分加成法之本發明之印刷配線板之製造方法的一實施形態中,包括如下步驟:準備本發明之附載體銅箔與絕緣基板;積層上述附載體銅箔與絕緣基板;於積層上述附載體銅箔與絕緣基板後剝離上述附載體銅箔之載體;於剝離上述載體而露出之極薄銅層與絕緣基板上設置對穿孔或/及盲孔;對含有上述對穿孔或/及盲孔之區域進行除膠 渣處理;對含有上述對穿孔或/及盲孔之區域賦予觸媒核;於剝離上述載體而露出之極薄銅層表面設置蝕刻阻劑;對上述蝕刻阻劑進行曝光而形成電路圖案;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法除去上述極薄銅層及上述觸媒核而形成電路;除去上述蝕刻阻劑;於藉由使用酸等腐蝕溶液之蝕刻或電漿等方法除去上述極薄銅層及上述觸媒核而露出之上述絕緣基板表面設置阻焊劑或鍍敷阻劑之步驟;於未設置上述阻焊劑或鍍敷阻劑之區域設置無電鍍層之步驟。 Therefore, in an embodiment of the method of manufacturing a printed wiring board of the present invention using a partial addition method, the method comprises the steps of: preparing a copper foil and an insulating substrate with a carrier of the present invention; and laminating the copper foil and the insulating substrate with the carrier; After laminating the above-mentioned carrier copper foil and the insulating substrate, the carrier with the carrier copper foil is peeled off; the ultra-thin copper layer exposed on the carrier is peeled off and the insulating substrate is provided with a pair of perforations or/and blind via holes; / and the area of the blind hole for degumming a slag treatment; a catalyst core is provided to the region containing the perforation or/and the blind hole; an etching resist is disposed on the surface of the extremely thin copper layer exposed by peeling off the carrier; and the etching resist is exposed to form a circuit pattern; The ultra-thin copper layer and the catalyst core are removed by etching or plasma etching using an etching solution such as an acid to form a circuit; the etching resist is removed; and etching or plasma etching using an etching solution such as an acid is used. The step of providing a solder resist or a plating resist on the surface of the insulating substrate exposed by the ultra-thin copper layer and the catalyst core; and providing an electroless plating layer in a region where the solder resist or the plating resist is not provided.
於本發明中,所謂減成法,係指藉由蝕刻等選擇性除去覆銅積層板上之銅箔之不必要之部分而形成導體圖案之方法。 In the present invention, the subtractive method refers to a method of forming a conductor pattern by selectively removing unnecessary portions of the copper foil on the copper clad laminate by etching or the like.
因此,於使用減成法之本發明之印刷配線板之製造方法的一實施形態中,包括如下步驟:準備本發明之附載體銅箔與絕緣基板;積層上述附載體銅箔與絕緣基板;於積層上述附載體銅箔與絕緣基板後剝離上述附載體銅箔之載體;於剝離上述載體而露出之極薄銅層與絕緣基板上設置對穿孔或/及盲孔;對含有上述對穿孔或/及盲孔之區域進行除膠渣處理;對含有上述對穿孔或/及盲孔之區域設置無電鍍層;於上述無電鍍層之表面設置電鍍層;於上述電鍍層或/及上述極薄銅層之表面設置蝕刻阻劑;對上述蝕刻阻劑進行曝光而形成電路圖案;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法除去上述極薄銅層、上述無電鍍層及上述電鍍層而形成電路;除去上述蝕刻阻劑。 Therefore, in an embodiment of the method for producing a printed wiring board of the present invention using the subtractive method, the method includes the steps of: preparing the copper foil and the insulating substrate with a carrier of the present invention; and laminating the copper foil and the insulating substrate with the carrier; After laminating the above-mentioned carrier copper foil and the insulating substrate, the carrier with the carrier copper foil is peeled off; the ultra-thin copper layer exposed on the carrier is peeled off and the insulating substrate is provided with a pair of perforations or/and blind holes; And the area of the blind hole is subjected to desmear treatment; an electroless plating layer is disposed on the surface containing the above-mentioned perforated or/and blind holes; a plating layer is disposed on the surface of the electroless plating layer; and the electroplated layer or/and the above-mentioned ultra-thin copper An etching resist is disposed on the surface of the layer; the etching resist is exposed to form a circuit pattern; and the ultra-thin copper layer, the electroless plating layer and the plating layer are removed by etching or plasma etching using an etching solution such as acid Forming a circuit; removing the above etch resist.
於使用減成法之本發明之印刷配線板之製造方法的另一實施形態中,包括如下步驟:準備本發明之附載體銅箔與絕緣基板;積層上述附載體銅箔與絕緣基板;於積層上述附載體銅箔與絕緣基板後剝離上述 附載體銅箔之載體;於剝離上述載體而露出之極薄銅層與絕緣基板上設置對穿孔或/及盲孔;對含有上述對穿孔或/及盲孔之區域進行除膠渣處理;對含有上述對穿孔或/及盲孔之區域設置無電鍍層;於上述無電鍍層之表面形成掩膜;於未形成掩膜之上述無電鍍層之表面設置電鍍層;於上述電鍍層或/及上述極薄銅層之表面設置蝕刻阻劑;對上述蝕刻阻劑進行曝光而形成電路圖案;藉由使用酸等腐蝕溶液之蝕刻或電漿等方法除去上述極薄銅層及上述無電鍍層而形成電路;除去上述蝕刻阻劑。 In another embodiment of the method of manufacturing a printed wiring board of the present invention using the subtractive method, the method includes the steps of: preparing a copper foil and an insulating substrate with a carrier of the present invention; laminating the copper foil and the insulating substrate with the carrier; After the above-mentioned carrier copper foil and the insulating substrate are peeled off, the above a carrier with a carrier copper foil; a perforated or/and blind via provided on the extremely thin copper layer and the insulating substrate exposed by peeling off the carrier; and desmear treatment on the region containing the above-mentioned perforated or/and blind via; Forming an electroless plating layer on the surface of the perforated or/and blind via; forming a mask on the surface of the electroless plating layer; providing a plating layer on the surface of the electroless plating layer on which the mask is not formed; and plating the layer or/and An etching resist is disposed on the surface of the ultra-thin copper layer; the etching resist is exposed to form a circuit pattern; and the ultra-thin copper layer and the electroless plating layer are removed by etching or plasma etching using an etching solution such as acid. Forming a circuit; removing the above etch resist.
設置對穿孔或/及盲孔之步驟、及其後之除膠渣步驟亦可不進行。 The step of providing a perforation or/and a blind hole, and the subsequent desmear step may not be performed.
此處,對使用本發明之附載體銅箔之印刷配線板之製造方法的具體例進行詳細說明。 Here, a specific example of a method of manufacturing a printed wiring board using the copper foil with a carrier of the present invention will be described in detail.
步驟1:首先,準備具有表面形成有粗化處理層之極薄銅層之附載體銅箔(第1層)。 Step 1: First, a copper foil (layer 1) with a very thin copper layer having a roughened layer formed on its surface was prepared.
步驟2:繼而,於極薄銅層之粗化處理層上塗佈抗蝕劑,進行曝光、顯影,將抗蝕劑蝕刻為特定之形狀。 Step 2: Next, a resist is applied onto the roughened layer of the ultra-thin copper layer, exposed, developed, and the resist is etched into a specific shape.
步驟3:繼而,形成電路用鍍敷後,除去抗蝕劑,藉此形成特定形狀之電路鍍敷。 Step 3: Then, after the plating of the circuit is formed, the resist is removed, thereby forming a circuit plating of a specific shape.
步驟4:繼而,以被覆電路鍍敷之方式(掩埋電路鍍敷之方式)於極薄銅層上設置嵌入樹脂而積層樹脂層,然後自極薄銅層側接著另一附載體銅箔(第2層)。 Step 4: Then, in a manner of coating a circuit (plating circuit plating), a resin layer is laminated on the ultra-thin copper layer, and then a resin layer is laminated on the side of the ultra-thin copper layer. 2 layer).
步驟5:繼而,自第2層之附載體銅箔剝離載體。再者,第2層亦可使用不具有載體之銅箔。 Step 5: The carrier is then stripped from the carrier copper foil of the second layer. Further, the second layer may also use a copper foil which does not have a carrier.
步驟6:繼而,於第2層之極薄銅層或銅箔及樹脂層之特定位置進行雷射開孔,露出電路鍍敷而形成盲孔。 Step 6: Then, a laser opening is performed at a specific position of the ultra-thin copper layer or the copper foil and the resin layer of the second layer to expose the circuit plating to form a blind hole.
步驟7:繼而,於盲孔中嵌入銅形成填孔(via fill)。 Step 7: In turn, copper is embedded in the blind via to form a via fill.
步驟8:繼而,以上述步驟2及3之方式於填孔上形成電路鍍敷。 Step 8: Then, circuit plating is formed on the filling holes in the manner of the above steps 2 and 3.
步驟9:繼而,自第1層之附載體銅箔剝離載體。 Step 9: Next, the carrier is peeled off from the carrier copper foil of the first layer.
步驟10:繼而,藉由閃蝕除去兩表面之極薄銅層(於在第2層上設置銅箔之情形時為銅箔),露出樹脂層內之電路鍍敷之表面。 Step 10: Then, the ultra-thin copper layer on both surfaces (copper foil in the case where the copper foil is provided on the second layer) is removed by flash etching to expose the surface of the circuit plating in the resin layer.
步驟11:繼而,於樹脂層內之電路鍍敷上形成凸塊,於該焊料上形成銅支柱。由此製作使用本發明之附載體銅箔之印刷配線板。 Step 11: Then, a bump is formed on the circuit plating in the resin layer, and a copper pillar is formed on the solder. Thus, a printed wiring board using the copper foil with a carrier of the present invention was produced.
上述另一附載體銅箔(第2層)可使用本發明之附載體銅箔,亦可使用習知之附載體銅箔,進而亦可使用通常之銅箔。又,於步驟8中之第2層之電路上可進而形成1層或多層電路,該等電路形成可藉由半加成法、減成法、部分加成法或改良型半加成法中之任一方法進行。 The above-mentioned other carrier copper foil (second layer) may be a copper foil with a carrier of the present invention, or a conventional copper foil with a carrier may be used, and a usual copper foil may be used. Further, in the circuit of the second layer in the step 8, a layer or a plurality of circuits may be further formed, and the circuits may be formed by a semi-additive method, a subtractive method, a partial addition method or a modified semi-additive method. Either way.
藉由如上述之印刷配線板之製造方法,由於採用電路鍍敷嵌入樹脂層中之構成,故而於例如如步驟10之藉由閃蝕除去極薄銅層時,電路鍍敷由樹脂層保護,其形狀得以保持,藉此微細電路之形成變得容易。又,由於電路鍍敷由樹脂層保護,故而耐電蝕性提高,電路之配線之導通得以良好地抑制。因此,微細電路之形成變得容易。又,於如步驟10及步驟11所示般藉由閃蝕除去極薄銅層時,由於電路鍍敷之露出面成為自樹脂層凹陷之形狀,故而容易於該電路鍍敷上形成凸塊,進而容易於其上形成銅支柱,製造效率提高。 According to the manufacturing method of the printed wiring board as described above, since the structure in which the circuit plating is embedded in the resin layer is employed, the circuit plating is protected by the resin layer when, for example, the ultra-thin copper layer is removed by flash etching as in the step 10, The shape is maintained, whereby the formation of a fine circuit becomes easy. Further, since the circuit plating is protected by the resin layer, the electric corrosion resistance is improved, and the conduction of the wiring of the circuit is well suppressed. Therefore, the formation of the fine circuit becomes easy. Further, when the ultra-thin copper layer is removed by flash etching as shown in steps 10 and 11, since the exposed surface of the circuit plating is recessed from the resin layer, it is easy to form bumps on the circuit plating. Further, it is easy to form a copper pillar thereon, and the manufacturing efficiency is improved.
再者,嵌入樹脂(resin)可使用公知之樹脂、預浸體。例如, 可使用作為含浸BT(雙順丁烯二醯亞胺三)樹脂或BT樹脂之玻璃布之預浸體、Ajinomoto Fine-Techno股份有限公司製造之ABF膜或ABF。又,上述嵌入樹脂(resin)可使用本說明書所記載之樹脂層及/或樹脂及/或預浸體。 Further, as the resin, a known resin or a prepreg can be used. For example, it can be used as an impregnation BT (bis-s-butylene diimine III A prepreg of glass cloth of resin or BT resin, ABF film manufactured by Ajinomoto Fine-Techno Co., Ltd. or ABF. Further, as the resin, the resin layer and/or the resin and/or the prepreg described in the present specification can be used.
又,上述第一層所使用之附載體銅箔可於該附載體銅箔之表面具有基板或樹脂層。藉由具有該基板或樹脂層而支持第一層所使用之附載體銅箔,不易產生褶皺,故而具有生產性提高之優點。再者,上述基板或樹脂層只要為發揮支持上述第一層所使用之附載體銅箔之效果者,則可使用全部之基板或樹脂層。例如作為上述基板或樹脂層,可使用本案說明書所記載之載體、預浸體、樹脂層或公知之載體、預浸體、樹脂層、金屬板、金屬箔、無機化合物之板、無機化合物之箔、有機化合物之板、有機化合物之箔。 Further, the copper foil with a carrier used in the first layer may have a substrate or a resin layer on the surface of the copper foil with the carrier. By having the substrate or the resin layer and supporting the copper foil with a carrier used for the first layer, wrinkles are less likely to occur, so that productivity is improved. Further, the substrate or the resin layer may be any substrate or resin layer as long as it exhibits the effect of supporting the carrier-attached copper foil used for the first layer. For example, as the substrate or the resin layer, a carrier, a prepreg, a resin layer, or a known carrier, a prepreg, a resin layer, a metal plate, a metal foil, a plate of an inorganic compound, or a foil of an inorganic compound described in the present specification can be used. , a plate of an organic compound, a foil of an organic compound.
進而,藉由於印刷配線板上搭載電子零件類,而完成印刷電路板。於本發明中,「印刷配線板」亦包括以上述方式搭載有電子零件類之印刷配線板、印刷電路板及印刷基板。 Further, the printed circuit board is completed by mounting electronic components on the printed wiring board. In the present invention, the "printed wiring board" includes a printed wiring board, a printed circuit board, and a printed circuit board on which electronic components are mounted as described above.
又,可使用該印刷配線板製作電子機器,亦可使用搭載有該電子零件類之印刷電路板製作電子機器,亦可使用搭載有該電子零件類之印刷基板製作電子機器。 Moreover, an electronic device can be produced using the printed wiring board, and an electronic device can be produced using a printed circuit board on which the electronic component is mounted, or an electronic device can be manufactured using the printed circuit board on which the electronic component is mounted.
[實施例] [Examples]
繼而,對實施例及比較例進行說明。再者,本實施例表示較佳之一例,本發明並不限定於該等實施例。因此,本發明之技術思想所包含之變化、其他實施例或態樣全部包含於本發明中。 Next, examples and comparative examples will be described. Furthermore, this embodiment shows a preferred example, and the present invention is not limited to the embodiments. Therefore, variations, other embodiments, or aspects included in the technical idea of the present invention are all included in the present invention.
1.附載體銅箔之製作 1. Production of carrier copper foil
作為載體,準備厚度35μm之長條之電解銅箔(JX日鑛日石金屬公司製造之JTC)。對於該銅箔之光亮面(shiny side),於以下之條件下利用輥對輥型之連續鍍敷生產線進行電鍍,藉此形成4000μm/dm2之附著量之Ni層。 As a carrier, a strip of electrolytic copper foil (JTC manufactured by JX Nippon Mining & Metal Co., Ltd.) having a thickness of 35 μm was prepared. With respect to the shiny side of the copper foil, a continuous roll plating line of a roll-to-roll type was electroplated under the following conditions, thereby forming a Ni layer having an adhesion amount of 4000 μm/dm 2 .
.鍍Ni . Ni plating
硫酸鎳:250~300g/l Nickel sulfate: 250~300g/l
鹽化鎳:35~45g/l Salinated nickel: 35~45g/l
乙酸鎳:10~20g/l Nickel acetate: 10~20g/l
硼酸:15~30g/l Boric acid: 15~30g/l
光澤劑:糖精、丁炔二醇等 Gloss agent: saccharin, butynediol, etc.
十二基硫酸鈉:30~100ppm Sodium dodecyl sulfate: 30~100ppm
pH:4~6 pH: 4~6
浴溫:50~70℃ Bath temperature: 50~70°C
電流密度:3~15A/dm2 Current density: 3~15A/dm 2
水洗及酸洗後,繼而,於輥對輥型之連續鍍敷生產線上,於以下之條件下藉由電解鉻酸鹽處理使11μg/dm2之附著量之Cr層附著於Ni層上。 After washing with water and pickling, a Cr layer having an adhesion amount of 11 μg/dm 2 was adhered to the Ni layer by an electrolytic chromate treatment under the following conditions on a roll-to-roll type continuous plating line.
.電解鉻酸鹽處理 . Electrolytic chromate treatment
液體組成:重鉻酸鉀1~10g/l、鋅0~5g/l Liquid composition: potassium dichromate 1~10g/l, zinc 0~5g/l
pH:3~4 pH: 3~4
液溫:50~60℃ Liquid temperature: 50~60°C
電流密度:0.1~2.6A/dm2 Current density: 0.1~2.6A/dm 2
庫侖量:0.5~30As/dm2 Coulomb amount: 0.5~30As/dm 2
繼而,於輥對輥型之連續鍍敷生產線上,於以下之條件下,藉由電鍍於Cr層上形成厚度1~12μm之極薄銅層形成,製造附載體銅箔。 Then, on the continuous plating line of the roll-to-roll type, a copper foil with a carrier was formed by plating on the Cr layer to form an extremely thin copper layer having a thickness of 1 to 12 μm.
.極薄銅層 . Very thin copper layer
銅濃度:30~120g/l Copper concentration: 30~120g/l
H2SO4濃度:20~120g/l H 2 SO 4 concentration: 20~120g/l
電解液溫度:20~80℃ Electrolyte temperature: 20~80°C
電流密度:10~100A/dm2 Current density: 10~100A/dm 2
對藉由上述方法所得之附載體銅箔之極薄銅層表面,作為粗化處理等表面處理,於表1~2所示之液體組成及鍍敷條件下,進行第1鍍敷及第2鍍敷。再者,關於實施例1~10、比較例1~3,對粗化處理層之表面按照記載之順序進行以下處理。 The surface of the ultra-thin copper layer of the copper foil with a carrier obtained by the above method is subjected to surface treatment such as roughening treatment, and the first plating and the second plating are performed under the liquid composition and plating conditions shown in Tables 1 and 2. Plating. Further, in Examples 1 to 10 and Comparative Examples 1 to 3, the surface of the roughened layer was subjected to the following treatment in the order described.
.防銹處理 . Anti-rust treatment
Zn:超過0~20g/L Zn: more than 0~20g/L
Ni:超過0~5g/L Ni: more than 0~5g/L
pH:2.5~4.5 pH: 2.5~4.5
液溫:30~50℃ Liquid temperature: 30~50°C
電流密度Dk:超過0~1.7A/dm2 Current density Dk: more than 0~1.7A/dm 2
時間:1秒 Time: 1 second
Zn附著量:5~250μg/dm2 Zn adhesion: 5~250μg/dm 2
Ni附著量:5~300μg/dm2 Ni adhesion: 5~300μg/dm 2
.鉻酸鹽處理 . Chromate treatment
K2Cr2O7 K 2 Cr 2 O 7
(Na2Cr2O7或CrO3):2~10g/L (Na 2 Cr 2 O 7 or CrO 3 ): 2~10g/L
NaOH或KOH:10~50g/L NaOH or KOH: 10~50g/L
ZnO或ZnSO4.7H2O:0.05~10g/L ZnO or ZnSO 4 . 7H 2 O: 0.05~10g/L
pH:7~13 pH: 7~13
浴溫:20~80℃ Bath temperature: 20~80°C
電流密度0.05~5A/dm2 Current density 0.05~5A/dm 2
時間:5~30秒 Time: 5~30 seconds
Cr附著量:10~150μg/dm2 Cr adhesion: 10~150μg/dm 2
.矽烷偶合處理 . Decane coupling treatment
乙烯基三乙氧基矽烷水溶液 Vinyl triethoxy decane aqueous solution
(乙烯基三乙氧基矽烷濃度:0.1~1.4wt%) (Vinyl triethoxy decane concentration: 0.1~1.4wt%)
pH:4~5 pH: 4~5
浴溫:25~60℃ Bath temperature: 25~60°C
浸漬時間:5~30秒 Immersion time: 5~30 seconds
再者,關於實施例11~16、比較例4~7,按照記載之順序對粗化處理層之表面進行以下處理。 Further, in Examples 11 to 16 and Comparative Examples 4 to 7, the surface of the roughened layer was subjected to the following treatment in the order described.
.防銹處理 . Anti-rust treatment
(液體組成) (liquid composition)
NaOH:40~200g/L NaOH: 40~200g/L
NaCN:70~250g/L NaCN: 70~250g/L
CuCN:50~200g/L CuCN: 50~200g/L
Zn(CN)2:2~100g/L Zn(CN) 2 : 2~100g/L
As2O3:0.01~1g/L As 2 O 3 : 0.01~1g/L
(液溫) (liquid temperature)
40~90℃ 40~90°C
(電流條件) (current condition)
電流密度:1~50A/dm2 Current density: 1~50A/dm 2
鍍敷時間:1~20秒 Plating time: 1~20 seconds
.鉻酸鹽處理 . Chromate treatment
K2Cr2O7(Na2Cr2O7或CrO3):2~10g/L K 2 Cr 2 O 7 (Na 2 Cr 2 O 7 or CrO 3 ): 2~10g/L
NaOH或KOH:10~50g/L NaOH or KOH: 10~50g/L
ZnOH或ZnSO4.7H2O:0.05~10g/L ZnOH or ZnSO 4 . 7H 2 O: 0.05~10g/L
pH:7~13 pH: 7~13
浴溫:20~80℃ Bath temperature: 20~80°C
電流密度:0.05~5A/dm2 Current density: 0.05~5A/dm 2
時間:5~30秒 Time: 5~30 seconds
.矽烷偶合處理 . Decane coupling treatment
噴塗0.1vol%~0.3vol%之3-環氧丙氧基丙基三甲氧基矽烷水溶液後,於100~200℃之空氣中乾燥、加熱0.1~10秒。 After spraying 0.1 vol% to 0.3 vol% of 3-glycidoxypropyltrimethoxydecane aqueous solution, it is dried in air at 100 to 200 ° C for 0.1 to 10 seconds.
再者,關於實施例17~23、比較例8~12,按照記載之順序對粗化處理層之表面進行以下之處理。 Further, in Examples 17 to 23 and Comparative Examples 8 to 12, the surface of the roughened layer was subjected to the following treatment in the order described.
.防銹處理 . Anti-rust treatment
液體組成:鎳5~20g/L、鈷1~8g/L Liquid composition: nickel 5~20g/L, cobalt 1~8g/L
pH:2~3 pH: 2~3
液溫:40~60℃ Liquid temperature: 40~60°C
電流密度:5~20A/dm2 Current density: 5~20A/dm 2
庫侖量:10~20As/dm2 Coulomb amount: 10~20As/dm 2
.鉻酸鹽處理 . Chromate treatment
液體組成:重鉻酸鉀1~10g/L、鋅0~5g/L Liquid composition: potassium dichromate 1~10g/L, zinc 0~5g/L
pH:3~4 pH: 3~4
液溫:50~60℃ Liquid temperature: 50~60°C
電流密度:0~2A/dm2(由於為浸漬鉻酸鹽處理,故而亦可於無電解下實施) Current density: 0~2A/dm 2 (due to impregnation of chromate, it can also be carried out without electrolysis)
庫侖量:0~2As/dm2(由於為浸漬鉻酸鹽處理,故而亦可於無電解下實施) Coulomb amount: 0~2As/dm 2 (due to impregnation of chromate treatment, it can also be carried out without electrolysis)
.矽烷偶合處理 . Decane coupling treatment
二胺基矽烷水溶液之塗佈(二胺基矽烷濃度:0.1~0.5wt%) Coating of diamino decane aqueous solution (diamine decane concentration: 0.1 to 0.5 wt%)
2.附載體銅箔之各種評價 2. Various evaluations of copper foil with carrier
關於以上述方式所得之附載體銅箔,藉由以下方法實施各種評價。將處理條件及評價結果示於表1~4。 With respect to the copper foil with a carrier obtained in the above manner, various evaluations were carried out by the following methods. The processing conditions and evaluation results are shown in Tables 1 to 4.
<表面粗糙度Rz> <surface roughness Rz>
使用小阪研究所股份有限公司製造之接觸粗糙度計SP-11,依據JIS B0601-1994,對具有粗化處理層之附載體銅箔之表面之任意5部位測定十點平均粗糙度,以其算術平均值作為表面粗糙度Rz。再者,對於具有耐熱 層、防銹層、鉻酸鹽處理層、矽烷偶合處理層之附載體銅箔,對設置矽烷偶合處理層後之具有粗化處理層之表面測定表面粗糙度Rz。 Using a contact roughness meter SP-11 manufactured by Kosaka Research Institute Co., Ltd., according to JIS B0601-1994, ten points average roughness was measured for any five portions of the surface of the copper foil with a carrier having a roughened layer to be arithmetic The average value is taken as the surface roughness Rz. Furthermore, for heat resistance The copper foil with a layer, a rustproof layer, a chromate treatment layer, and a decane coupling treatment layer was measured, and the surface roughness Rz was measured on the surface of the roughened layer after the decane coupling treatment layer was provided.
<粗化粒子之平均直徑及平均長度> <Average diameter and average length of roughened particles>
於粗化處理層剖面任意選擇5個視野(長度(圖2之橫向上之長度)15μm),使用SII公司製造之高性能聚焦離子束裝置(SMI3050),拍攝FIB-SIM照片,於以與各粗化粒子之照片之橫向(與銅箔表面平行之方向)平行之方式作直線之情形時(圖2表示參考例),以橫跨各粒子(粗化粒子)之最大長度作為各粒子之直徑。然後求出各視野中之粒子之直徑之平均值,以該平均值作為各視野中之粗化粒子之平均直徑。又,於以與照片之縱向(與板厚方向平行之方向)平行之方式作直線之情形時,以橫穿各粒子之最大長度作為各粒子之長度。然後求出各視野中之粒子之長度之平均值,以該平均值作為各視野中之粗化粒子之平均長度。分別測定各視野中之粗化粒子之平均直徑及平均長度。繼而,藉由將各視野中之平均直徑及平均長度之合計除以5(視野個數)而分別算出粗化粒子之平均直徑之平均值及平均長度之平均值。又,以5個視野中最大之粗化粒子之平均直徑作為粗化粒子之平均直徑之最大值。以5個視野中最小之粗化粒子之平均直徑作為粗化粒子之平均直徑之最小值。又,以5個視野中最大之粗化粒子之長度作為粗化粒子之平均長度之最大值。以5個視野中最小之粗化粒子之平均直徑作為粗化粒子之平均直徑之最小值。又,根據該等測定值求出粗化粒子之平均直徑之最大值與最小值,求出該等差除以平均直徑之平均值所得之值A。又,求出各視野中粗化粒子之平均長度與粗化粒子之平均直徑之比。於5個視野中,以粗化粒子之平均長度與粗化粒子之平均直徑 之比的最大之值作為粗化粒子之平均長度與粗化粒子之平均直徑之比之最大值。又,於5個視野中,以粗化粒子之平均長度與粗化粒子之平均直徑之比的最小之值作為粗化粒子之平均長度與粗化粒子之平均直徑之比之最小值。然後求出將各視野之粗化粒子之平均長度與粗化粒子之平均直徑之比合計而得之值除以5所得之值(粗化粒子之平均長度與粗化粒子之平均直徑之比之平均值)B。又,求出粗化粒子之平均長度之最大值與最小值之差除以粗化粒子之平均長度之平均值所得之值C。又,求出粗化粒子之平均長度與上述粗化粒子之平均直徑之比之最大值與該比之最小值之差除以上述粗化粒子之平均長度與上述粗化粒子之平均直徑之比之平均值B所得之值D。 Five fields of view (length (length in the lateral direction of FIG. 2) 15 μm) were arbitrarily selected from the roughened layer profile, and a FIB-SIM photograph was taken using a high-performance focused ion beam apparatus (SMI3050) manufactured by SII Corporation. When the transverse direction of the photograph of the roughened particles (the direction parallel to the surface of the copper foil) is parallel (the reference example is shown in Fig. 2), the maximum length of each particle (roughened particle) is taken as the diameter of each particle. . Then, the average value of the diameters of the particles in each of the fields of view is obtained, and the average value is used as the average diameter of the roughened particles in each of the fields of view. Further, in the case where a straight line is formed in parallel with the longitudinal direction of the photograph (the direction parallel to the sheet thickness direction), the maximum length of each particle is used as the length of each particle. Then, the average value of the lengths of the particles in each of the fields of view is obtained, and the average value is used as the average length of the roughened particles in each of the fields of view. The average diameter and average length of the roughened particles in each field of view were measured. Then, the average value of the average diameters of the roughened particles and the average value of the average lengths were respectively calculated by dividing the total of the average diameter and the average length in each of the fields of view by 5 (the number of fields of view). Further, the average diameter of the largest roughened particles in the five fields of view is used as the maximum value of the average diameter of the roughened particles. The average diameter of the smallest roughened particles in the five fields of view is taken as the minimum of the average diameter of the roughened particles. Further, the length of the largest roughened particles in the five fields of view is used as the maximum value of the average length of the roughened particles. The average diameter of the smallest roughened particles in the five fields of view is taken as the minimum of the average diameter of the roughened particles. Further, the maximum value and the minimum value of the average diameter of the roughened particles are obtained from the measured values, and the value A obtained by dividing the average value by the average value of the average diameters is obtained. Further, the ratio of the average length of the roughened particles in each field of view to the average diameter of the roughened particles was determined. The average length of the roughened particles and the average diameter of the roughened particles in five fields of view The maximum value of the ratio is the maximum of the ratio of the average length of the roughened particles to the average diameter of the roughened particles. Further, the minimum value of the ratio of the average length of the roughened particles to the average diameter of the roughened particles in the five fields of view is the minimum value of the ratio of the average length of the roughened particles to the average diameter of the roughened particles. Then, the value obtained by dividing the ratio of the average length of the roughened particles of each field of view and the average diameter of the roughened particles by 5 is obtained (the ratio of the average length of the roughened particles to the average diameter of the roughened particles) Average) B. Further, a value C obtained by dividing the difference between the maximum value and the minimum value of the average length of the roughened particles by the average of the average lengths of the roughened particles is obtained. Further, the ratio of the maximum value of the ratio of the average length of the roughened particles to the average diameter of the roughened particles and the minimum value of the ratio is divided by the ratio of the average length of the roughened particles to the average diameter of the roughened particles. The value D obtained by the average value B.
<孔之面積之總和> <sum of the area of the hole>
使用實施例及比較例之附載體銅箔,樹脂使用Mitsubishi Gas Chemical股份有限公司製造之GHPL-830MBT,於銅箔之實施有粗化處理之面側積層樹脂。對於藉由蝕刻除去積層有樹脂之銅層之樹脂(複本)表面的任意5個視野(將1個視野之面積設為縱15μm×橫15μm=225μm2),拍攝SEM照片。然後逐個視野算出具有轉印附載體銅箔之實施有粗化處理之面而得之凹凸之樹脂表面的孔所占面積率之總和(%)(=1個視野中之孔之面積之總和(μm2)/一個視野之觀察視野之面積(μm2)×100)。並且以5個視野中之樹脂表面之孔所占面積率之總和之最大的值作為孔所占面積總和之最大值。又,以5個視野中之樹脂表面之孔所占面積率之總和之最小的值作為孔所占面積總和之最小值,以5個視野之樹脂表面之孔所占面積率之算術平均值作為樹脂表面之孔所占面積總和之平均值。又,算出孔所占 面積總和之最大值與孔所占面積總和之最小值的差除以孔所占面積總和的平均值所得之值E。然後於樹脂表面之孔所占面積總和之平均值為20%以上之情形時,設為良好。又,於孔所占面積總和之最大值與孔所占面積總和之最小值的差除以孔所占面積總和的平均值所得之值E為0.6以下之情形時,判斷為良好。圖3表示該樹脂表面之外觀照片之例。 The copper foil with a carrier of the examples and the comparative examples was used, and the resin was a surface-side resin which was subjected to roughening treatment on a copper foil using GHPL-830MBT manufactured by Mitsubishi Gas Chemical Co., Ltd. By removing the etching product for any layer (replica) of the surface of the copper layer of the resin of the resin 5 fields (the field of view of an area of 15μm × vertical to horizontal 15μm = 225μm 2), SEM photographs. Then, the total area (%) of the area ratio of the pores of the resin surface on which the surface of the copper foil having the roughened surface of the carrier-attached copper foil was transferred was calculated from the field of view (the sum of the areas of the holes in the field of view = 1) Μm 2 )/ Area of observation field of one field of view (μm 2 ) × 100). Further, the maximum value of the total area ratio of the pores of the resin surface in the five fields of view is taken as the maximum value of the total area occupied by the pores. Further, the minimum value of the total area ratio of the pores of the resin surface in the five fields of view is taken as the minimum value of the total area occupied by the pores, and the arithmetic mean value of the area ratio of the pores of the resin surface of the five fields of view is taken as The average of the total area occupied by the pores on the surface of the resin. Further, the value E obtained by dividing the difference between the maximum value of the total area occupied by the holes and the total area of the areas occupied by the holes by the average value of the total area of the holes is calculated. Then, when the average value of the total area of the pores on the surface of the resin is 20% or more, it is good. Further, when the value E obtained by dividing the difference between the maximum value of the total area of the holes and the total area of the holes and the average value of the area occupied by the holes is 0.6 or less, it is judged to be good. Fig. 3 shows an example of the appearance of the surface of the resin.
<剝離強度> <peel strength>
將附載體銅箔之極薄銅層側貼合於絕緣基板(Mitsubishi Gas Chemical股份有限公司製造之BT(Bismaleimide-Triazine)樹脂)上,於大氣中、20kgf/cm2、220℃×2小時之條件下進行壓接後,將載體剝離,對極薄銅層表面進行鍍銅,將極薄銅層與鍍銅之合計厚度設為15μm。剝離強度係利用測力計對BT樹脂側進行拉伸,依據90°剝離法(JIS C 6471 8.1)而進行測定。再者,對於各實施例、各比較例,剝離強度係測定5個樣品。然後關於各實施例、各比較例,求出5個樣品之剝離強度之最大值、最小值、平均值。然後關於各實施例、各比較例,亦算出剝離強度之最大值與最小值之差除以剝離強度之平均值所得之值。再者,測定剝離強度時之電路寬度設為10mm。再者,若剝離強度為0.5kN/m以上,則設為良好。若剝離強度之最大值與最小值之差除以剝離強度之平均值所得之值為0.4以下,則設為良好。 The extremely thin copper layer side of the copper foil with a carrier was attached to an insulating substrate (Bismaleimide-Triazine resin manufactured by Mitsubishi Gas Chemical Co., Ltd.) in the atmosphere at 20 kgf/cm 2 and 220 ° C for 2 hours. After the pressure bonding, the carrier was peeled off, and the surface of the ultra-thin copper layer was plated with copper, and the total thickness of the ultra-thin copper layer and the copper plating was set to 15 μm. The peel strength was measured by stretching the BT resin side with a dynamometer, and measuring according to a 90° peeling method (JIS C 6471 8.1). Further, for each of the examples and the comparative examples, the peel strength was measured for five samples. Then, with respect to each of the examples and the comparative examples, the maximum value, the minimum value, and the average value of the peel strengths of the five samples were determined. Then, with respect to each of the examples and the comparative examples, the value obtained by dividing the difference between the maximum value and the minimum value of the peel strength by the average value of the peel strength was also calculated. Further, the circuit width at the time of measuring the peel strength was set to 10 mm. In addition, when the peeling strength is 0.5 kN/m or more, it is good. If the difference between the maximum value and the minimum value of the peel strength divided by the average value of the peel strength is 0.4 or less, it is good.
<蝕刻性> <etching property>
將附載體銅箔貼附於聚醯亞胺基板上,於220℃加熱壓接2小時,其後,將極薄銅層自載體剝離。繼而於聚醯亞胺基板上之極薄銅層表面塗佈感光性抗蝕劑後,藉由曝光步驟印刷50條L/S=5μm/5μm寬之電路,於 以下之噴淋蝕刻條件下進行除去銅層之不必要部分之蝕刻處理。 The copper foil with a carrier was attached to the polyimide substrate and heat-pressed at 220 ° C for 2 hours, after which the ultra-thin copper layer was peeled off from the carrier. Then, after applying a photosensitive resist on the surface of the ultra-thin copper layer on the polyimide substrate, 50 circuits of L/S=5 μm/5 μm wide are printed by the exposure step. An etching process for removing unnecessary portions of the copper layer is performed under the following spray etching conditions.
(噴淋蝕刻條件) (spray etching conditions)
蝕刻液:氯化鐵水溶液(波美度:40度) Etching solution: aqueous solution of ferric chloride (Pomet: 40 degrees)
液溫:60℃ Liquid temperature: 60 ° C
噴淋壓:2.0MPa Spray pressure: 2.0MPa
繼續進行蝕刻,測定電路頂部寬達到4μm之時間,進而評價此時之電路底部寬(底邊X之長度)及蝕刻因數。蝕刻因數係於逐漸擴散地蝕刻之情形時(產生塌陷之情形時),在將塌陷距假定對電路進行垂直蝕刻之情形時之自銅箔上表面之垂線與樹脂基板之交點的長度之距離設為a之情形時,表示該a與銅箔之厚度b之比:b/a者,該數值越大,意指傾斜角越大,蝕刻殘渣無殘留,塌陷越小。圖4表示電路圖案之寬度方向之橫截面的模式圖及使用該模式圖之蝕刻因數之計算方法之概略。電路底部寬X係藉由自電路上方之SEM觀察進行測定,而算出蝕刻因數(EF=b/a)。b(μm)為極薄銅層之厚度(μm)。再者,以a=(X(μm)-4(μm))/2而計算。蝕刻因數表示測定電路中之12點並取平均值而得者。藉此,可簡單判定蝕刻性之優劣。又,藉由亦算出12點之蝕刻因數之標準偏差,可判定利用蝕刻所形成之電路之直線性的優劣。 The etching was continued, and the width of the top of the circuit was measured to be 4 μm, and the width of the bottom of the circuit (the length of the bottom side X) and the etching factor were evaluated. The etching factor is in the case of gradually diffusing etching (when a collapse occurs), and the distance from the intersection of the perpendicular line of the upper surface of the copper foil and the resin substrate when the collapse distance is assumed to be vertically etched to the circuit is set. In the case of a, the ratio of the a to the thickness b of the copper foil: b/a, the larger the value, the larger the inclination angle, the less residue of the etching residue, and the smaller the collapse. 4 is a schematic view showing a cross section of a circuit pattern in a width direction and an outline of a calculation method of an etching factor using the pattern. The width X of the bottom of the circuit was measured by SEM observation from above the circuit, and the etching factor (EF = b / a) was calculated. b (μm) is the thickness (μm) of the extremely thin copper layer. Furthermore, it is calculated by a = (X (μm) - 4 (μm)) / 2. The etch factor represents the 12 points in the measurement circuit and is averaged. Thereby, the merits of the etching property can be easily determined. Further, by calculating the standard deviation of the etching factor of 12 points, it is possible to determine the merit of the linearity of the circuit formed by the etching.
於本發明中,將蝕刻因數為5以上評價為蝕刻性:○,將為2.5以上且未達5評價為蝕刻性:△,將未達2.5或者無法算出或無法形成電路評價為蝕刻性:×,將無法剝離評價為蝕刻性:-。又,可認為蝕刻因數之標準偏差越小,電路之直線性越良好。將蝕刻因數之標準偏差未達0.5判斷為直線性:○,將0.5~未達1.0判斷為直線性:△,將1.0以上判斷為直線性:×。 In the present invention, an etching factor of 5 or more is evaluated as etchability: ○, and it is 2.5 or more and less than 5 is evaluated as etchability: Δ, which is less than 2.5 or cannot be calculated or cannot be formed as a etchability: × , will not be peeled off as etchability: -. Further, it can be considered that the smaller the standard deviation of the etching factor, the better the linearity of the circuit. The standard deviation of the etching factor was less than 0.5 and it was judged as linearity: ○, 0.5 to less than 1.0 was judged to be linear: Δ, and 1.0 or more was judged to be linear: ×.
(評價結果) (Evaluation results)
實施例1~29均於極薄銅層之表面形成有由如下粗化粒子所構成之粗化處理層,且蝕刻性及剝離強度良好,上述粗化粒子之平均直徑之平均值為0.05~1.3μm,平均長度之平均值為0.3~3.0μm,平均直徑之最大值與最小值的差除以上述平均直徑之平均值所得之值A{A=粗化粒子之平均直徑之最大值與最小值的差(μm)/粗化粒子之平均直徑的平均值(μm)}為0.6以下。 In each of Examples 1 to 29, a roughened layer composed of the following roughened particles was formed on the surface of the ultra-thin copper layer, and the etching property and the peeling strength were good, and the average diameter of the roughened particles was 0.05 to 1.3. Mm, the average value of the average length is 0.3 to 3.0 μm, the difference between the maximum value and the minimum value of the average diameter is divided by the average value of the above average diameters A{A=the maximum and minimum values of the average diameter of the roughened particles The difference (μm) / the average value (μm) of the average diameter of the roughened particles is 0.6 or less.
比較例1~12、14、17中,值A均超過0.6,蝕刻性不良。 In Comparative Examples 1 to 12, 14, and 17, the value A was more than 0.6, and the etching property was poor.
比較例13、15、16中,平均直徑之平均值均超過1.3μm,蝕刻性不良。 In Comparative Examples 13, 15, and 16, the average value of the average diameters exceeded 1.3 μm, and the etching property was poor.
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| KR102413300B1 (en) * | 2020-12-10 | 2022-06-27 | 와이엠티 주식회사 | Metal foil, carrier with metal foil comprising the same and printed circuit board comprising the same |
| KR20240009403A (en) * | 2021-05-20 | 2024-01-22 | 미쓰이금속광업주식회사 | Roughened copper foil, copper foil with carrier, copper clad laminate and printed wiring board |
| CN118075987A (en) * | 2023-12-25 | 2024-05-24 | 广州方邦电子股份有限公司 | Metal foil, wiring board, copper-clad laminate, negative electrode material for battery, and battery |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0397891A (en) * | 1989-09-11 | 1991-04-23 | Nippon Mining Co Ltd | Production of material with formed patina |
| JPH0813191A (en) * | 1994-06-29 | 1996-01-16 | Kawasaki Steel Corp | Method for producing Zn-Cr-C alloy plated steel sheet having excellent plating adhesion |
| JP2002069691A (en) * | 2000-08-31 | 2002-03-08 | Nippon Denkai Kk | Method for manufacturing copper foil for printed circuit board |
| KR101614624B1 (en) * | 2011-08-31 | 2016-04-29 | 제이엑스 킨조쿠 가부시키가이샤 | Copper foil with carrier |
-
2014
- 2014-06-04 TW TW103119488A patent/TW201504038A/en not_active IP Right Cessation
- 2014-06-04 JP JP2015521475A patent/JP6591893B2/en not_active Expired - Fee Related
- 2014-06-04 WO PCT/JP2014/064874 patent/WO2014196576A1/en not_active Ceased
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI624375B (en) * | 2015-08-06 | 2018-05-21 | Jx Nippon Mining & Metals Corp | Carrier copper foil, laminated body, manufacturing method of printed wiring board, and manufacturing method of electronic device |
| CN111194362A (en) * | 2017-07-24 | 2020-05-22 | 古河电气工业株式会社 | Surface-treated copper foil, and copper clad laminates and printed wiring boards using the same |
| CN111194362B (en) * | 2017-07-24 | 2022-03-11 | 古河电气工业株式会社 | Surface-treated copper foil, and copper clad laminates and printed wiring boards using the same |
| CN111655908A (en) * | 2017-12-05 | 2020-09-11 | 古河电气工业株式会社 | Surface-treated copper foil, and copper-clad laminates and printed wiring boards using the same |
| CN111655908B (en) * | 2017-12-05 | 2022-03-29 | 古河电气工业株式会社 | Surface-treated copper foil, and copper-clad laminate and printed wiring board using same |
| CN114603946A (en) * | 2022-05-12 | 2022-06-10 | 广州方邦电子股份有限公司 | Metal foil, copper-clad laminate, wiring board, semiconductor, negative electrode material, and battery |
| CN114603945A (en) * | 2022-05-12 | 2022-06-10 | 广州方邦电子股份有限公司 | Metal foil, copper-clad laminate, wiring board, semiconductor, negative electrode material, and battery |
| CN114603946B (en) * | 2022-05-12 | 2022-09-06 | 广州方邦电子股份有限公司 | Metal foils, copper clad laminates, circuit boards, semiconductors, anode materials and batteries |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014196576A1 (en) | 2014-12-11 |
| JP6591893B2 (en) | 2019-10-16 |
| TWI561372B (en) | 2016-12-11 |
| JPWO2014196576A1 (en) | 2017-02-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |