TW201442082A - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
- Publication number
- TW201442082A TW201442082A TW103103208A TW103103208A TW201442082A TW 201442082 A TW201442082 A TW 201442082A TW 103103208 A TW103103208 A TW 103103208A TW 103103208 A TW103103208 A TW 103103208A TW 201442082 A TW201442082 A TW 201442082A
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating film
- semiconductor
- semiconductor device
- wiring
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 318
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 238000000034 method Methods 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 25
- 239000011159 matrix material Substances 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 66
- 238000009792 diffusion process Methods 0.000 description 49
- 239000011229 interlayer Substances 0.000 description 44
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 33
- 229910001936 tantalum oxide Inorganic materials 0.000 description 33
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 27
- 238000001312 dry etching Methods 0.000 description 24
- 238000000206 photolithography Methods 0.000 description 23
- 229910052721 tungsten Inorganic materials 0.000 description 23
- 239000010937 tungsten Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 19
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 17
- 238000002955 isolation Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- -1 tungsten nitride Chemical class 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000001568 sexual effect Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/74—Array wherein each memory cell has more than one access device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013014454 | 2013-01-29 | ||
| JP2013014455 | 2013-01-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201442082A true TW201442082A (zh) | 2014-11-01 |
Family
ID=51262251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103103208A TW201442082A (zh) | 2013-01-29 | 2014-01-28 | 半導體裝置及其製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW201442082A (fr) |
| WO (1) | WO2014119537A1 (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742484A (zh) * | 2014-11-25 | 2016-07-06 | 力晶科技股份有限公司 | 电阻式随机存取存储器结构及其随机存取存储器操作方法 |
| US9520407B2 (en) | 2014-02-06 | 2016-12-13 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method for manufacturing the same |
| TWI720514B (zh) * | 2018-10-19 | 2021-03-01 | 日商東芝記憶體股份有限公司 | 半導體裝置及半導體記憶裝置 |
| CN112970122A (zh) * | 2018-10-09 | 2021-06-15 | 美光科技公司 | 形成装置的方法及相关装置与电子系统 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102477093B1 (ko) * | 2015-10-13 | 2022-12-13 | 삼성전자주식회사 | 푸리에 변환을 수행하는 방법 및 장치 |
| CN111739567B (zh) * | 2019-03-25 | 2022-06-24 | 中电海康集团有限公司 | Mram存储阵列 |
| JP7518789B2 (ja) * | 2021-03-17 | 2024-07-18 | 株式会社東芝 | 半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4422584B2 (ja) * | 2004-09-10 | 2010-02-24 | シャープ株式会社 | 半導体記憶装置 |
| US8130534B2 (en) * | 2009-01-08 | 2012-03-06 | Qualcomm Incorporated | System and method to read and write data a magnetic tunnel junction element |
| US8411493B2 (en) * | 2009-10-30 | 2013-04-02 | Honeywell International Inc. | Selection device for a spin-torque transfer magnetic random access memory |
| JP5054803B2 (ja) * | 2010-05-26 | 2012-10-24 | シャープ株式会社 | 半導体記憶装置 |
-
2014
- 2014-01-28 TW TW103103208A patent/TW201442082A/zh unknown
- 2014-01-28 WO PCT/JP2014/051753 patent/WO2014119537A1/fr not_active Ceased
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11063064B2 (en) | 2014-02-06 | 2021-07-13 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing the same |
| US11296114B2 (en) | 2014-02-06 | 2022-04-05 | Kioxia Corporation | Semiconductor memory device and method for manufacturing the same |
| US12089410B2 (en) | 2014-02-06 | 2024-09-10 | Kioxia Corporation | Semiconductor memory device and method for manufacturing the same |
| US10115733B2 (en) | 2014-02-06 | 2018-10-30 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing the same |
| US10497717B2 (en) | 2014-02-06 | 2019-12-03 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing the same |
| US10741583B2 (en) | 2014-02-06 | 2020-08-11 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing the same |
| US9520407B2 (en) | 2014-02-06 | 2016-12-13 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method for manufacturing the same |
| US11744075B2 (en) | 2014-02-06 | 2023-08-29 | Kioxia Corporation | Semiconductor memory device and method for manufacturing the same |
| CN105742484A (zh) * | 2014-11-25 | 2016-07-06 | 力晶科技股份有限公司 | 电阻式随机存取存储器结构及其随机存取存储器操作方法 |
| CN105742484B (zh) * | 2014-11-25 | 2018-09-28 | 力晶科技股份有限公司 | 电阻式随机存取存储器结构及其随机存取存储器操作方法 |
| CN112970122A (zh) * | 2018-10-09 | 2021-06-15 | 美光科技公司 | 形成装置的方法及相关装置与电子系统 |
| US11437521B2 (en) | 2018-10-09 | 2022-09-06 | Micron Technology, Inc. | Methods of forming a semiconductor device |
| TWI780364B (zh) * | 2018-10-09 | 2022-10-11 | 美商美光科技公司 | 形成一記憶體裝置之方法及相關記憶體裝置與電子系統 |
| CN112970122B (zh) * | 2018-10-09 | 2024-05-14 | 美光科技公司 | 形成装置的方法及相关装置与电子系统 |
| US12199183B2 (en) | 2018-10-09 | 2025-01-14 | Micron Technology, Inc. | Memory devices including oxide semiconductor |
| TWI720514B (zh) * | 2018-10-19 | 2021-03-01 | 日商東芝記憶體股份有限公司 | 半導體裝置及半導體記憶裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014119537A1 (fr) | 2014-08-07 |
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