TW201448203A - Substrate structure - Google Patents
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- TW201448203A TW201448203A TW103107958A TW103107958A TW201448203A TW 201448203 A TW201448203 A TW 201448203A TW 103107958 A TW103107958 A TW 103107958A TW 103107958 A TW103107958 A TW 103107958A TW 201448203 A TW201448203 A TW 201448203A
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- 239000000758 substrate Substances 0.000 title claims abstract description 176
- 239000012044 organic layer Substances 0.000 claims abstract description 340
- 239000010410 layer Substances 0.000 claims abstract description 108
- 125000006850 spacer group Chemical group 0.000 claims description 151
- 239000000463 material Substances 0.000 claims description 49
- 239000011368 organic material Substances 0.000 claims description 24
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- 239000004417 polycarbonate Substances 0.000 claims description 7
- 229920000515 polycarbonate Polymers 0.000 claims description 7
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- 229910052755 nonmetal Inorganic materials 0.000 claims description 5
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 5
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 34
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
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- 229910000420 cerium oxide Inorganic materials 0.000 description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 6
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- 238000005401 electroluminescence Methods 0.000 description 5
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
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- Electroluminescent Light Sources (AREA)
Abstract
Description
本發明是有關於一種基板結構。 The present invention relates to a substrate structure.
相較於一般硬質基板,可撓性基板的應用更為廣泛。可撓性基板的優點為具可撓性、方便攜帶、符合安全性以及產品應用層面廣泛,但其缺點為不耐高溫以及阻水阻氧氣性較差等。由於典型之可撓性基板無法完全阻隔水氣及氧氣的穿透,因此會加速基板上之電子元件劣化而導致電子元件之壽命減短,故無法充分符合商業上的需求。因此,如何有效改善可撓性基板的阻隔水氣及氧氣之特性,以期提昇電子元件的可靠度(reliability),實為研發者關注的問題之一。 Compared to general hard substrates, flexible substrates are more widely used. The advantages of the flexible substrate are flexibility, portability, safety and product application, but its disadvantages are low temperature resistance and poor resistance to water and oxygen. Since a typical flexible substrate cannot completely block the penetration of moisture and oxygen, the deterioration of electronic components on the substrate is accelerated, and the life of the electronic component is shortened, so that it is not sufficiently compatible with commercial requirements. Therefore, how to effectively improve the characteristics of the moisture barrier and oxygen of the flexible substrate in order to improve the reliability of the electronic component is one of the concerns of the developer.
本發明之一實施例提出一種基板結構,包括底有機層、至少一無機層、至少一有機層以及至少一凸起物。至少一凸起物自底有機層或有機層的上表面凸出。至少一凸起物自底有機層或有機層的上表面凸出的最大高度為H,且覆蓋至少一凸起物的有 機層的厚度為T,其中T1.1H。 One embodiment of the present invention provides a substrate structure including a bottom organic layer, at least one inorganic layer, at least one organic layer, and at least one protrusion. At least one protrusion protrudes from the upper surface of the bottom organic layer or the organic layer. The maximum height of the at least one protrusion protruding from the upper surface of the bottom organic layer or the organic layer is H, and the thickness of the organic layer covering at least one protrusion is T, wherein T 1.1H.
本發明之另一實施例提出一種基板結構,包括底有機層、至少一無機層以及多個有機層。有機層與無機層交替堆疊於底有機層上,其中有機層包括第一有機層以及第二有機層,第一有機層相對第二有機層鄰近於底有機層,第二有機層相對第一有機層遠離於底有機層,且第一有機層的厚度為T1,第二有機層的厚度為T2,其中T1T2。 Another embodiment of the present invention provides a substrate structure including a bottom organic layer, at least one inorganic layer, and a plurality of organic layers. The organic layer and the inorganic layer are alternately stacked on the bottom organic layer, wherein the organic layer includes a first organic layer and a second organic layer, the first organic layer is adjacent to the bottom organic layer relative to the second organic layer, and the second organic layer is opposite to the first organic layer The layer is away from the bottom organic layer, and the thickness of the first organic layer is T1, and the thickness of the second organic layer is T2, wherein T1 T2.
為讓本發明更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the present invention more apparent, the following detailed description of the embodiments and the accompanying drawings are set forth below.
100、100A~100L、100B’‧‧‧基板結構 100, 100A~100L, 100B'‧‧‧ substrate structure
102‧‧‧載板 102‧‧‧ Carrier Board
104‧‧‧可離型區域 104‧‧‧Removable area
104a、110a、200a、1201a、1202a、1203a、1301a、1302a、1303a‧‧‧上表面 104a, 110a, 200a, 1201a, 1202a, 1203a, 1301a, 1302a, 1303a‧‧‧ upper surface
104b、110b、1202b、1301b、1302b‧‧‧側壁 104b, 110b, 1202b, 1301b, 1302b‧‧‧ side walls
106‧‧‧切割線 106‧‧‧ cutting line
110‧‧‧底有機層 110‧‧‧ bottom organic layer
120‧‧‧無機層 120‧‧‧Inorganic layer
130‧‧‧有機層 130‧‧‧Organic layer
140、140’、140”‧‧‧凸起物 140, 140’, 140” ‧ ‧ bulges
152‧‧‧第一間隙物 152‧‧‧ first spacer
154‧‧‧第二間隙物 154‧‧‧Second spacer
155‧‧‧第三間隙物 155‧‧‧ third spacer
156‧‧‧第四間隙物 156‧‧‧fourth spacer
200A~200E‧‧‧封裝結構 200A~200E‧‧‧Package structure
200b‧‧‧側面 200b‧‧‧ side
200c‧‧‧下表面 200c‧‧‧ lower surface
210‧‧‧第一基板 210‧‧‧First substrate
212‧‧‧有機電激發光元件 212‧‧‧Organic electroluminescent components
220‧‧‧第二基板 220‧‧‧second substrate
230‧‧‧框膠 230‧‧‧Box glue
240‧‧‧保護層 240‧‧‧protection layer
250‧‧‧膠材 250‧‧‧Stained materials
260‧‧‧吸氣劑 260‧‧‧ getter
270‧‧‧阻氣膜 270‧‧‧ gas barrier film
1201‧‧‧第一無機層 1201‧‧‧First inorganic layer
1202‧‧‧第二無機層 1202‧‧‧Second inorganic layer
1203‧‧‧第三無機層 1203‧‧‧ Third inorganic layer
1301‧‧‧第一有機層 1301‧‧‧First organic layer
1302‧‧‧第二有機層 1302‧‧‧Second organic layer
1303‧‧‧第三有機層 1303‧‧‧ Third organic layer
A、T1、T2、T3、Tb‧‧‧厚度 A, T1, T2, T3, Tb‧‧‧ thickness
A1、A2‧‧‧面積 A1, A2‧‧‧ area
B‧‧‧距離 B‧‧‧ distance
D、D’、D”‧‧‧最大深度 D, D’, D” ‧ ‧ maximum depth
H、H’、H”‧‧‧最大高度 H, H’, H” ‧ ‧ maximum height
Hb、Hs、Hs’、Hs”‧‧‧高度 Hb, Hs, Hs', Hs" ‧ ‧ height
I-I’‧‧‧線 I-I’‧‧‧ line
R‧‧‧內部空間 R‧‧‧Internal space
Tt‧‧‧總厚度 Tt‧‧‧ total thickness
圖1A至圖1D為依照本發明的第一實施例的基板結構的製造流程示意圖。 1A to 1D are schematic views showing a manufacturing process of a substrate structure in accordance with a first embodiment of the present invention.
圖2A為依照本發明的第二實施例的基板結構的剖面示意圖。 2A is a schematic cross-sectional view showing a structure of a substrate in accordance with a second embodiment of the present invention.
圖2B為依照本發明的第三實施例的基板結構的剖面示意圖。 2B is a schematic cross-sectional view showing a structure of a substrate in accordance with a third embodiment of the present invention.
圖3A為依照本發明的第四實施例的基板結構的上視示意圖。 3A is a top plan view of a substrate structure in accordance with a fourth embodiment of the present invention.
圖3B為圖3A中沿線I-I’的剖面示意圖。 Fig. 3B is a schematic cross-sectional view taken along line I-I' of Fig. 3A.
圖4為依照本發明的第五實施例的基板結構的剖面示意圖。 4 is a cross-sectional view showing a structure of a substrate in accordance with a fifth embodiment of the present invention.
圖5為依照本發明的第六實施例的基板結構的剖面示意圖。 Figure 5 is a cross-sectional view showing a structure of a substrate in accordance with a sixth embodiment of the present invention.
圖6為依照本發明的第七實施例的基板結構的剖面示意圖。 Figure 6 is a cross-sectional view showing the structure of a substrate in accordance with a seventh embodiment of the present invention.
圖7為依照本發明的第八實施例的基板結構的剖面示意圖。 Figure 7 is a cross-sectional view showing the structure of a substrate in accordance with an eighth embodiment of the present invention.
圖8為依照本發明的第九實施例的基板結構的剖面示意圖。 Figure 8 is a cross-sectional view showing the structure of a substrate in accordance with a ninth embodiment of the present invention.
圖9為由有機材料構成的間隙物的剖面示意圖。 Figure 9 is a schematic cross-sectional view of a spacer formed of an organic material.
圖10為依照本發明的第十實施例的基板結構的剖面示意圖。 Figure 10 is a cross-sectional view showing the structure of a substrate in accordance with a tenth embodiment of the present invention.
圖11為依照本發明的第十一實施例的基板結構的剖面示意圖。 Figure 11 is a cross-sectional view showing the structure of a substrate in accordance with an eleventh embodiment of the present invention.
圖12為依照本發明的第十二實施例的基板結構的剖面示意圖。 Figure 12 is a cross-sectional view showing the structure of a substrate in accordance with a twelfth embodiment of the present invention.
圖13為依照本發明的第十三實施例的基板結構的剖面示意圖。 Figure 13 is a cross-sectional view showing the structure of a substrate in accordance with a thirteenth embodiment of the present invention.
圖14為依照本發明一實施例的封裝結構的剖面示意圖。 14 is a cross-sectional view of a package structure in accordance with an embodiment of the present invention.
圖15A為配置有下發光型有機電激發光元件之第一基板的剖面示意圖。 Fig. 15A is a schematic cross-sectional view showing a first substrate on which a lower-emitting organic electroluminescent device is disposed.
圖15B為配置有上發光型有機電激發光元件之第一基板的剖面示意圖。 15B is a schematic cross-sectional view showing a first substrate on which an upper light-emitting type organic electroluminescent device is disposed.
圖16至圖19分別為依照本發明其他實施例的封裝結構的剖面示意圖。 16 to 19 are schematic cross-sectional views showing a package structure in accordance with other embodiments of the present invention.
圖1A至圖1D為依照本發明的第一實施例的基板結構的製造流程示意圖。 1A to 1D are schematic views showing a manufacturing process of a substrate structure in accordance with a first embodiment of the present invention.
請參照圖1A,首先,於載板102上形成可離型區域104。可離型區域104的形成方法例如是對載板102進行可離型區域104 的表面處理以減少底有機層110對載板102的附著力,或是形成一層與底有機層110附著性較差的薄膜,或是形成一層與底有機層110附著性好,但與載板102附著性差的薄膜。可離型區域104的材料例如是聚對二甲苯(parylene)系列材料,或是聚四氟乙烯(polytetrafluoroethene,PTFE)系列材料,或是矽氧烷(soloxane)系列材料。接著,於可離型區域104上形成底有機層110,其中底有機層110覆蓋了可離型區域104的上表面104a以及側壁104b,且底有機層110的面積可大於可離型區域104的面積。底有機層110的形成方法例如是先藉由濕式塗佈法形成底有機材料層(未繪示),再藉由諸如加熱、照光或其他合適的方法使底有機材料層固化(乾燥),以形成底有機層110。底有機層110的材料包括聚亞醯胺(PI)、聚碳酸酯(PC)、聚醚碸(PES)、聚降冰片烯(PNB)、聚醚醯亞胺(PEI)、聚間苯二甲酸乙二酯(PEN)、聚乙烯對苯二甲酸酯(PET)、聚甲基丙烯酸甲酯(PMMA)以及其他合適的有機材料。再者,底有機層110的厚度為Tb。 Referring to FIG. 1A, first, a detachable region 104 is formed on the carrier 102. The method of forming the detachable region 104 is, for example, performing the detachable region 104 on the carrier 102. The surface treatment is to reduce the adhesion of the bottom organic layer 110 to the carrier 102, or to form a film having poor adhesion to the bottom organic layer 110, or to form a layer with the bottom organic layer 110, but with the carrier 102. A film with poor adhesion. The material of the releaseable region 104 is, for example, a parylene series material, a polytetrafluoroethene (PTFE) series material, or a soloxane series material. Next, a bottom organic layer 110 is formed on the detachable region 104, wherein the bottom organic layer 110 covers the upper surface 104a of the detachable region 104 and the sidewall 104b, and the area of the bottom organic layer 110 may be larger than that of the detachable region 104. area. The bottom organic layer 110 is formed by, for example, forming a bottom organic material layer (not shown) by a wet coating method, and then curing (drying) the bottom organic material layer by, for example, heating, illuminating, or other suitable method. To form the bottom organic layer 110. The material of the bottom organic layer 110 includes polyiminamide (PI), polycarbonate (PC), polyether oxime (PES), polynorbornene (PNB), polyether quinone imine (PEI), polyisophthalene. Ethylene formate (PEN), polyethylene terephthalate (PET), polymethyl methacrylate (PMMA) and other suitable organic materials. Further, the thickness of the bottom organic layer 110 is Tb.
在本實施例中,在底有機層110形成之後,可先清洗有 機層的上表面再進行下一個膜層的製作,但清洗製程並非為必要步驟。不過,在清洗過程中不一定可以將上表面的物質或是顆粒完全移除,於底有機層110上有未被移除的殘留物即構成為凸起物140。更詳細來說,在形成底有機層110的過程中或者在形成底有機層110之後,可能有至少一凸起物140會位於底有機層110的上表面110a上。其中,所述凸起物140可能有一部分是嵌入底 有機層110中,或者是藉由黏附或靜電吸引等其他方式附著在底有機層110的上表面110a上。一般來說,凸起物140例如是塗佈液中的微粒、塗佈設備中的微粒、固化設備中的微粒或其他環境中的微粒等,其中塗佈液中的微粒可能是塗佈液中未溶解的物質或是雜質。也就是說,凸起物140的材料可能相同於底有機層110,也可能不同於底有機層110。 In this embodiment, after the bottom organic layer 110 is formed, it may be cleaned first. The upper surface of the machine layer is then fabricated into the next film layer, but the cleaning process is not a necessary step. However, it is not always possible to completely remove the substance or particles on the upper surface during the cleaning process, and the residue on the bottom organic layer 110 which is not removed is formed as the protrusion 140. In more detail, at least one protrusion 140 may be located on the upper surface 110a of the bottom organic layer 110 during the formation of the bottom organic layer 110 or after the formation of the bottom organic layer 110. Wherein, the protrusion 140 may have a part embedded in the bottom The organic layer 110 is attached to the upper surface 110a of the bottom organic layer 110 by other means such as adhesion or electrostatic attraction. In general, the protrusions 140 are, for example, particles in a coating liquid, particles in a coating device, particles in a curing device, or particles in other environments, etc., wherein the particles in the coating liquid may be in a coating liquid. Undissolved matter or impurities. That is, the material of the protrusions 140 may be the same as the bottom organic layer 110 or may be different from the bottom organic layer 110.
在本實施例中,凸起物140自底有機層110的上表面110a凸出的最大高度為H,而凸起物140嵌入底有機層110中的最大深度為D,其中例如D(1/4)(H+D)。若當微粒嵌入底有機層110中的最大深度D大於或等於微粒的總高度(H+D)的1/4時,在上述的清洗過程中較不易將具有D(1/4)(H+D)關係的微粒移除,因而構成為凸起物140。此外,在一般無塵室的標準下,凸起物140的最大粒徑約為5微米。 In the present embodiment, the maximum height of the protrusions 140 protruding from the upper surface 110a of the bottom organic layer 110 is H, and the maximum depth of the protrusions 140 embedded in the bottom organic layer 110 is D, wherein, for example, D (1/4) (H+D). If the maximum depth D of the particles embedded in the bottom organic layer 110 is greater than or equal to 1/4 of the total height (H+D) of the particles, it is less likely to have D in the above cleaning process. The particles of the (1/4) (H+D) relationship are removed and thus formed as protrusions 140. In addition, the protrusions 140 have a maximum particle size of about 5 microns under the standard of a clean room.
請參照圖1B,於底有機層110上可例如共形地形成第一無機層1201,其中第一無機層1201覆蓋了底有機層110的上表面110a以及凸起物140自上表面110a凸出的部分表面。第一無機層1201的形成方法例如是化學氣相沉積法、濺鍍法、原子層沉積法、液態塗佈法或其他合適的方法。第一無機層1201的材料例如是氧化矽、氮化矽、氮氧化矽、氧化鋁、鋁或其他合適的無機阻氣材料。接著,於第一無機層1201上形成第一有機層1301,其中第一有機層1301覆蓋了第一無機層1201以及凸起物140。第一有機層1301的形成方法例如是藉由濕式塗佈法形成第一有機材料層(未 繪示),再藉由諸如加熱、照光或其他合適的方法使第一有機材料層固化,以形成第一有機層1301。第一有機層1301的形成方法也可利用真空鍍膜法,於第一無機層1201上沉積一層薄膜。第一有機層1301的材料包括聚亞醯胺(PI)、聚碳酸酯(PC)、聚醚碸(PES)、聚降冰片烯(PNB)、聚醚醯亞胺(PEI)、聚間苯二甲酸乙二酯(PEN)、聚乙烯對苯二甲酸酯(PET)、聚甲基丙烯酸甲酯(PMMA)、聚四氟乙烯(PTFE)、聚對二甲苯(parylene)系列材料、氟碳化物(perfluorinated chemicals,PFCs)以及其他合適的有機材料。 Referring to FIG. 1B, a first inorganic layer 1201 may be formed, for example, conformally on the bottom organic layer 110, wherein the first inorganic layer 1201 covers the upper surface 110a of the bottom organic layer 110 and the protrusions 140 protrude from the upper surface 110a. Part of the surface. The method of forming the first inorganic layer 1201 is, for example, a chemical vapor deposition method, a sputtering method, an atomic layer deposition method, a liquid coating method, or other suitable methods. The material of the first inorganic layer 1201 is, for example, cerium oxide, cerium nitride, cerium oxynitride, aluminum oxide, aluminum or other suitable inorganic gas barrier material. Next, a first organic layer 1301 is formed on the first inorganic layer 1201, wherein the first organic layer 1301 covers the first inorganic layer 1201 and the protrusions 140. The method of forming the first organic layer 1301 is, for example, forming a first organic material layer by a wet coating method (not The first organic material layer is cured by, for example, heating, illumination, or other suitable method to form the first organic layer 1301. The method of forming the first organic layer 1301 may also deposit a thin film on the first inorganic layer 1201 by a vacuum plating method. The material of the first organic layer 1301 includes polyiminamide (PI), polycarbonate (PC), polyether oxime (PES), polynorbornene (PNB), polyether quinone imine (PEI), poly-m-benzene. Ethylene dicarboxylate (PEN), polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), polytetrafluoroethylene (PTFE), parylene series materials, fluorine Perfluorinated chemicals (PFCs) and other suitable organic materials.
在本實施例中,第一有機層1301的厚度為T1,且 T11.1H。其中,厚度T1的決定方式例如是量測底有機層110的上表面110a的表面起伏(亦即,量測凸起物140自底有機層110的上表面110a凸出的最大高度為H),再藉由T11.1H決定出厚度T1的數值。位於底有機層110上的凸起物140的高度H一般不會大於底有機層110的厚度Tb,第一有機層1301的厚度T1也可以是小於前一層有機層(例如底有機層110)以撫平凸起物140所造成的高度差。在其他實施例中,也可以省略上述表面起伏的量測步驟,而直接以底有機層110的厚度Tb來決定第一有機層1301的厚度T1,即TbT1。 In this embodiment, the thickness of the first organic layer 1301 is T1, and T1 1.1H. Wherein, the thickness T1 is determined by, for example, measuring the surface undulation of the upper surface 110a of the bottom organic layer 110 (that is, the maximum height at which the projection protrusion 140 protrudes from the upper surface 110a of the bottom organic layer 110 is H), T1 1.1H determines the value of the thickness T1. The height H of the protrusions 140 on the bottom organic layer 110 is generally not greater than the thickness Tb of the bottom organic layer 110, and the thickness T1 of the first organic layer 1301 may also be smaller than the previous organic layer (for example, the bottom organic layer 110). The height difference caused by the flattening protrusion 140 is smoothed. In other embodiments, the step of measuring the surface relief may be omitted, and the thickness T1 of the first organic layer 1301, that is, Tb, may be directly determined by the thickness Tb of the bottom organic layer 110. T1.
在本實施例中,在第一有機層1301形成之後,未被移除 的殘留物即構成為凸起物140’。凸起物140’的材料可能相同於第一有機層1301,也可能不同於第一有機層1301。再者,在本實施例中,凸起物140’自第一有機層1301的上表面1301a凸出的最大 高度為H’,而凸起物140’嵌入第一有機層1301中的最大深度為D’,其中例如D’(1/4)(H’+D’)。另外,在一實施例中,有機層的厚度會與凸起物的尺寸成正比關係。更詳細來說,由於薄有機層上的尺寸較大的殘留物較容易被移除,相較於厚有機層而言,薄有機層上可能存在的凸起物的尺寸會較小且數量會較少。在此,第一有機層1301的厚度T1可小於底有機層110的厚度Tb,凸起物140’的尺寸可能會小於凸起物140的尺寸,例如(H+D)>(H’+D’)。 In the present embodiment, after the first organic layer 1301 is formed, the residue that has not been removed is configured as the protrusion 140'. The material of the protrusions 140' may be the same as the first organic layer 1301 or may be different from the first organic layer 1301. Moreover, in the present embodiment, the maximum height of the protrusion 140' protruding from the upper surface 1301a of the first organic layer 1301 is H', and the maximum depth of the protrusion 140' embedded in the first organic layer 1301 is D', where for example D' (1/4) (H'+D'). Additionally, in one embodiment, the thickness of the organic layer will be proportional to the size of the protrusions. In more detail, since the larger size residue on the thin organic layer is easier to remove, the size of the protrusions that may exist on the thin organic layer will be smaller and the amount will be smaller than the thick organic layer. less. Here, the thickness T1 of the first organic layer 1301 may be smaller than the thickness Tb of the bottom organic layer 110, and the size of the protrusion 140' may be smaller than the size of the protrusion 140, for example, (H+D)>(H'+D ').
請參照圖1C,之後,於第一有機層1301上可例如共形地形成第二無機層1202,其中第二無機層1202覆蓋了第一有機層1301的上表面1301a以及凸起物140’自上表面1301a凸出的部分表面。第二無機層1202的形成方法例如是化學氣相沉積法、濺鍍法、原子層沉積法、液態塗佈法或其他合適的方法。第二無機層1202的材料例如是氧化矽、氮化矽、氮氧化矽、氧化鋁、鋁或其他合適的無機阻氣材料。接著,於第二無機層1202上形成第二有機層1302,其中第二有機層1302覆蓋了第二無機層1202以及凸起物140’。第二有機層1302的形成方法例如是藉由濕式塗佈法形成第二有機材料層(未繪示),再藉由諸如加熱、照光或其他合適的方法使第二有機材料層固化,以形成第二有機層1302。第二有機層1302的形成方法也可利用真空鍍膜法,於第二無機層1202上沉積一層薄膜。第二有機層1302的材料包括聚亞醯胺(PI)、聚碳酸酯(PC)、聚醚碸(PES)、聚降冰片烯(PNB)、聚醚醯亞胺(PEI)、聚間苯二甲酸乙二酯(PEN)、聚乙烯對苯二甲酸酯(PET)、聚甲基 丙烯酸甲酯(PMMA)、聚四氟乙烯(PTFE)、聚對二甲苯系列材料、氟碳化物(PFCs)以及其他合適的有機材料。在一實施例中,底有機層110的材料可以相同於第一有機層1301與第二有機層1302中至少一者的材料。 Referring to FIG. 1C, a second inorganic layer 1202 may be formed, for example, conformally on the first organic layer 1301, wherein the second inorganic layer 1202 covers the upper surface 1301a of the first organic layer 1301 and the protrusion 140'. A portion of the surface on which the upper surface 1301a protrudes. The method of forming the second inorganic layer 1202 is, for example, a chemical vapor deposition method, a sputtering method, an atomic layer deposition method, a liquid coating method, or other suitable methods. The material of the second inorganic layer 1202 is, for example, cerium oxide, cerium nitride, cerium oxynitride, aluminum oxide, aluminum or other suitable inorganic gas barrier material. Next, a second organic layer 1302 is formed on the second inorganic layer 1202, wherein the second organic layer 1302 covers the second inorganic layer 1202 and the protrusions 140'. The second organic layer 1302 is formed by, for example, forming a second organic material layer (not shown) by a wet coating method, and then curing the second organic material layer by, for example, heating, illuminating, or other suitable method. A second organic layer 1302 is formed. The method of forming the second organic layer 1302 may also deposit a thin film on the second inorganic layer 1202 by a vacuum plating method. The material of the second organic layer 1302 includes polyiminamide (PI), polycarbonate (PC), polyether oxime (PES), polynorbornene (PNB), polyether quinone imine (PEI), poly-m-benzene. Ethylene dicarboxylate (PEN), polyethylene terephthalate (PET), polymethyl Methyl acrylate (PMMA), polytetrafluoroethylene (PTFE), parylene series materials, fluorocarbons (PFCs) and other suitable organic materials. In an embodiment, the material of the bottom organic layer 110 may be the same as the material of at least one of the first organic layer 1301 and the second organic layer 1302.
在本實施例中,第二有機層1302的厚度為T2,且T21.1H’。若第一有機層1301已經大致將凸起物140所造成的高度差撫平,第二有機層1302的厚度T2也可以設置為T1T2。在第二有機層1302形成之後,可例如藉由清洗有機層的上表面讓第二有機層1302的上表面潔淨且平坦。在一實施例中,薄有機層上的尺寸較大的殘留物較容易被移除,相較於厚有機層而言,薄有機層上可能存在的凸起物的尺寸會較小且數量會較少。在本實施例中,遠離於底有機層110的第二有機層1302的厚度T2小於鄰近於底有機層110的第一有機層1301的厚度T1,第二有機層1302的上表面1302a會較第一有機層1301平坦。 In this embodiment, the thickness of the second organic layer 1302 is T2, and T2 1.1H'. If the first organic layer 1301 has substantially smoothed the height difference caused by the protrusions 140, the thickness T2 of the second organic layer 1302 may also be set to T1. T2. After the second organic layer 1302 is formed, the upper surface of the second organic layer 1302 can be made clean and flat, for example, by cleaning the upper surface of the organic layer. In one embodiment, the larger size residue on the thin organic layer is easier to remove, and the size of the protrusions that may be present on the thin organic layer is smaller and the amount will be smaller than the thick organic layer. less. In this embodiment, the thickness T2 of the second organic layer 1302 away from the bottom organic layer 110 is smaller than the thickness T1 of the first organic layer 1301 adjacent to the bottom organic layer 110, and the upper surface 1302a of the second organic layer 1302 is the same. An organic layer 1301 is flat.
在本實施例中,多個無機層120(例如包括第一無機層1201及第二無機層1202)與多個有機層130(例如包括第一有機層1301及第二有機層1302)交替堆疊於底有機層110上。亦即,第一無機層1201、第一有機層1301、第二無機層1202以及第二有機層1302依序堆疊於底有機層110上而構成基板結構100。基板結構100的總厚度Tt為多個無機層120的厚度與多個有機層130的厚度之總和,且總厚度Tt可例如是5~50μm。再者,本實施例是以兩個無機層120與兩個有機層130交替堆疊為例來說明,但本 發明不限於此。在其他實施例中,亦可以是至少一無機層120與至少一有機層130交替堆疊。 In this embodiment, the plurality of inorganic layers 120 (including, for example, the first inorganic layer 1201 and the second inorganic layer 1202) and the plurality of organic layers 130 (including, for example, the first organic layer 1301 and the second organic layer 1302) are alternately stacked on On the bottom organic layer 110. That is, the first inorganic layer 1201, the first organic layer 1301, the second inorganic layer 1202, and the second organic layer 1302 are sequentially stacked on the bottom organic layer 110 to constitute the substrate structure 100. The total thickness Tt of the substrate structure 100 is the sum of the thicknesses of the plurality of inorganic layers 120 and the thicknesses of the plurality of organic layers 130, and the total thickness Tt may be, for example, 5 to 50 μm. Furthermore, this embodiment is described by taking two inorganic layers 120 and two organic layers 130 alternately stacked as an example, but The invention is not limited to this. In other embodiments, at least one inorganic layer 120 and at least one organic layer 130 may be alternately stacked.
請再參照圖1C,接著,沿著切割線106切割有機層130、無機層120、底有機層110以及可離型區域104,並使由有機層130、無機層120及底有機層110堆疊而成的基板結構100可以藉由可離型區域104自載板102上分離開來。所述切割方法例如是雷射切割、刀鋸切割或其他合適的切割製程。 Referring to FIG. 1C again, the organic layer 130, the inorganic layer 120, the bottom organic layer 110, and the detachable region 104 are cut along the dicing line 106, and the organic layer 130, the inorganic layer 120, and the bottom organic layer 110 are stacked. The resulting substrate structure 100 can be separated from the carrier plate 102 by the detachable region 104. The cutting method is, for example, a laser cutting, a knife saw cutting or other suitable cutting process.
請參照圖1D,如上所述,即完成了獨立的基板結構100A的製作。在基板結構100A中,從鄰近於底有機層110往遠離於底有機層110的方向上,多個有機層130的厚度可逐漸減少,這使得基板結構100的上表面(亦即,上表面1302a)較平坦,但本發明不限於此。在其他實施例中,T1亦可以是等於或小於T2(T1=T2或T1<T2),只要可使基板結構100的上表面平坦即可。在本實施例中,每一有機層130的厚度可覆蓋且平坦前一層有機層上的凸起物,且每一有機層130的厚度分別例如是0.1~10μm。舉例來說,若T11.1H,可使第一有機層1301的厚度T1覆蓋且平坦底有機層110的上表面110a上的凸起物140。 Referring to FIG. 1D, as described above, the fabrication of the independent substrate structure 100A is completed. In the substrate structure 100A, the thickness of the plurality of organic layers 130 may be gradually reduced from a direction adjacent to the bottom organic layer 110 away from the bottom organic layer 110, which causes the upper surface of the substrate structure 100 (ie, the upper surface 1302a) ) is relatively flat, but the invention is not limited thereto. In other embodiments, T1 may also be equal to or less than T2 (T1=T2 or T1<T2) as long as the upper surface of the substrate structure 100 can be flat. In this embodiment, the thickness of each of the organic layers 130 may cover and flatten the protrusions on the previous organic layer, and the thickness of each of the organic layers 130 is, for example, 0.1 to 10 μm. For example, if T1 1.1H, the thickness T1 of the first organic layer 1301 may be covered and the protrusions 140 on the upper surface 110a of the bottom organic layer 110 may be flattened.
另外,從鄰近於底有機層110往遠離於底有機層110的方向上,當多個有機層130的厚度逐漸減少時,對於多個無機層120的阻氣能力的要求亦可以逐漸減少,其中遠離底有機層110的無機層120主要是阻擋來自於前一層有機層130的側向水氧滲透,當有機層130越薄,其水氧穿透的量越少,進而可降低製程 的困難度。也就是說,製作這些無機層120的製程條件可以隨著不同的要求而調整。例如,當無機層120的阻氣能力要求較低時,可以採用較低溫的製程或較短的時間製作無機層120。 In addition, when the thickness of the plurality of organic layers 130 is gradually decreased from the direction adjacent to the bottom organic layer 110 toward the bottom organic layer 110, the gas barrier capability of the plurality of inorganic layers 120 may be gradually reduced, wherein The inorganic layer 120 away from the bottom organic layer 110 mainly blocks lateral water oxygen permeation from the previous organic layer 130. When the organic layer 130 is thinner, the amount of water oxygen permeation is less, thereby reducing the process. The difficulty. That is to say, the process conditions for fabricating these inorganic layers 120 can be adjusted with different requirements. For example, when the gas barrier capability of the inorganic layer 120 is required to be low, the inorganic layer 120 can be formed using a lower temperature process or a shorter time.
基板結構100A的水氣穿透率(Water Vapor Transmission Rate,WVTR)在60℃下例如小於0.001g/m2day,較佳為10-6g/m2day。在本實施例中,基板結構100A的水氣穿透率是由無機層120的阻氣效果(或品質)決定,但是無機層120的阻氣效果又會受到有機層130影響,例如有機層130的上表面的平坦度或材料的耐高溫性等。在不改變基板結構100A的總厚度Tt(以維持機械強度)的情況下,本發明之一實施例可以藉由多個有機層130的厚度的優化設計,以使得基板結構100A的上表面(例如,上表面1302a)較平坦且具有更佳的阻氣特性以及撓曲特性。 The water vapor transmission rate (WVTR) of the substrate structure 100A is, for example, less than 0.001 g/m 2 day at 60 ° C, preferably 10 -6 g/m 2 day. In the present embodiment, the water vapor permeability of the substrate structure 100A is determined by the gas barrier effect (or quality) of the inorganic layer 120, but the gas barrier effect of the inorganic layer 120 is affected by the organic layer 130, for example, the organic layer 130. The flatness of the upper surface or the high temperature resistance of the material. Without changing the total thickness Tt of the substrate structure 100A (to maintain mechanical strength), an embodiment of the present invention may be optimized by the thickness of the plurality of organic layers 130 such that the upper surface of the substrate structure 100A (eg, The upper surface 1302a) is relatively flat and has better gas barrier properties as well as flexural properties.
在本實施例中,底有機層110或有機層130的至少其中一層的材料可例如為耐高溫材料,其5%重量損失溫度可大於400℃,且在400℃下的氣體釋出(outgas)量可小於50ng/cm2,較佳為小於20ng/cm2,更佳為小於6ng/cm2。在本實施例中,有機層130可採用對溫度耐受性佳的材料,因此在形成無機層120的高溫製程中可以避免有機層130因不耐高溫而造成的氣體釋出或分解,進而可避免在有機層中形成氣泡而影響無機層120的品質。 也就是說,耐高溫的有機層130會具有較平坦的上表面(因無氣泡形成),因此可避免在其上所形成的無機層120的厚度不均勻、上表面不平坦以及膜層不連續(諸如斷開)等問題,進而可使基板結構 100A具有更佳的阻氣特性以及撓曲特性。在耐高溫的有機層130進行高溫固化(乾燥)的過程中,可在加熱有機層130的同時對無機層120進行迴火處理,以使無機層120的結構更緻密,進而可提高基板結構100A的阻氣特性與撓曲特性並可簡化製程。 In this embodiment, the material of at least one of the bottom organic layer 110 or the organic layer 130 may be, for example, a refractory material, and the 5% weight loss temperature may be greater than 400 ° C, and the gas is released at 400 ° C. The amount may be less than 50 ng/cm 2 , preferably less than 20 ng/cm 2 , more preferably less than 6 ng/cm 2 . In the present embodiment, the organic layer 130 can be made of a material that is resistant to temperature. Therefore, in the high-temperature process of forming the inorganic layer 120, the gas release or decomposition of the organic layer 130 due to high temperature resistance can be avoided. Avoiding the formation of bubbles in the organic layer affects the quality of the inorganic layer 120. That is, the high temperature resistant organic layer 130 may have a relatively flat upper surface (because of no bubble formation), thereby avoiding uneven thickness of the inorganic layer 120 formed thereon, uneven upper surface, and discontinuous film layer Problems such as (such as breaking) can further improve the gas barrier properties and the flexural properties of the substrate structure 100A. During the high temperature curing (drying) of the high temperature resistant organic layer 130, the inorganic layer 120 may be tempered while heating the organic layer 130 to make the structure of the inorganic layer 120 denser, thereby improving the substrate structure 100A. The gas barrier properties and flexural properties simplify the process.
圖2A為依照本發明的第二實施例的基板結構的剖面示意圖。圖2A之實施例與上述圖1A至圖1D之實施例的結構以及製造方法相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。請參照圖2A,圖2A之實施例與上述圖1A至圖1D之實施例的不同之處在於,基板結構100B更包括至少一凸起物140”、第三無機層1203以及第三有機層1303。至少一凸起物140”位於第二有機層1302的上表面1302a上。凸起物140”的材料可能相同於第二有機層1302,也可能不同於第二有機層1302。再者,在本實施例中,凸起物140”自第二有機層1302的上表面1302a凸出的最大高度為H”,而凸起物140”嵌入第二有機層1302中的最大深度為D”,其中例如D”(1/4)(H”+D”)。第三無機層1203覆蓋了第二有機層1302的上表面1302a以及凸起物140”自上表面1302a凸出的部分表面,第三有機層1303覆蓋了第三無機層1203以及凸起物140”。在一實施例中,底有機層110的材料可以相同於第一有機層1301、第二有機層1302以及第三有機層1303中至少一者的材料。在本實施例中,第三有機層1303的厚度為T3,且T31.1H”。此外,第三有機層1303的厚度T3也可以設置為T1T2T3,但本發明不限於此。在其他實施例中,亦可以是 T1T3T2、T2T1T3、T2T3T1、T3T1T2或T3T2T1,只要可使基板結構100B的上表面(例如,上表面1303a)平坦即可。 2A is a schematic cross-sectional view showing a structure of a substrate in accordance with a second embodiment of the present invention. The embodiment of FIG. 2A is similar to the structure and manufacturing method of the above-described embodiment of FIGS. 1A to 1D, and therefore the same or similar elements are denoted by the same or similar symbols, and the description thereof will not be repeated. Referring to FIG. 2A, the embodiment of FIG. 2A is different from the embodiment of FIG. 1A to FIG. 1D in that the substrate structure 100B further includes at least one protrusion 140", a third inorganic layer 1203, and a third organic layer 1303. At least one protrusion 140" is located on the upper surface 1302a of the second organic layer 1302. The material of the protrusion 140" may be the same as the second organic layer 1302, or may be different from the second organic layer 1302. Further, in the present embodiment, the protrusion 140" is from the upper surface 1302a of the second organic layer 1302. The maximum height of the protrusion is H", and the maximum depth of the protrusion 140" embedded in the second organic layer 1302 is D", where for example D" (1/4) (H"+D"). The third inorganic layer 1203 covers the upper surface 1302a of the second organic layer 1302 and a portion of the surface of the protrusion 140" protruding from the upper surface 1302a, and the third organic layer 1303 covers the third inorganic layer 1203 and the protrusion 140" . In an embodiment, the material of the bottom organic layer 110 may be the same as the material of at least one of the first organic layer 1301, the second organic layer 1302, and the third organic layer 1303. In this embodiment, the thickness of the third organic layer 1303 is T3, and T3 1.1H". In addition, the thickness T3 of the third organic layer 1303 can also be set to T1. T2 T3, but the invention is not limited thereto. In other embodiments, it may also be T1. T3 T2, T2 T1 T3, T2 T3 T1, T3 T1 T2 or T3 T2 T1 may be such that the upper surface (for example, the upper surface 1303a) of the substrate structure 100B can be flat.
圖2B為依照本發明的第三實施例的基板結構的剖面示 意圖。圖2B之實施例與上述圖2A之實施例的結構以及製造方法相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。請參照圖2B,圖2B之實施例與上述圖2A之實施例的不同之處在於,基板結構100B’不具有凸起物140、140’及140”。 在本實施例中,有機層130(包括第一有機層1301、第二有機層1302及第三有機層1303)的厚度可以設置為T1T2T3。因此,從鄰近於底有機層110往遠離於底有機層110的方向上,多個有機層130的厚度逐漸減少,這使得對遠離底有機層110的無機層120的阻氣能力要求亦可以逐漸減少。 2B is a schematic cross-sectional view showing a structure of a substrate in accordance with a third embodiment of the present invention. The embodiment of FIG. 2B is similar to the structure and manufacturing method of the embodiment of FIG. 2A described above, and thus the same or similar elements are designated by the same or similar symbols, and the description thereof will not be repeated. Referring to FIG. 2B, the embodiment of FIG. 2B is different from the embodiment of FIG. 2A described above in that the substrate structure 100B' does not have the protrusions 140, 140' and 140". In this embodiment, the organic layer 130 ( The thickness including the first organic layer 1301, the second organic layer 1302, and the third organic layer 1303) may be set to T1 T2 T3. Therefore, the thickness of the plurality of organic layers 130 gradually decreases from the direction adjacent to the bottom organic layer 110 toward the bottom organic layer 110, which makes the gas barrier capability of the inorganic layer 120 away from the bottom organic layer 110 gradually cut back.
圖3A為依照本發明的第四實施例的基板結構的上視示 意圖,而圖3B為圖3A中沿線I-I’的剖面示意圖。圖3A至圖3B之實施例與上述圖1A至圖1D之實施例的結構以及製造方法相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。請參照圖3A至圖3B,圖3A至圖3B之實施例與上述圖1A至圖1D之實施例的不同之處在於,在基板結構100C中,第一有機層1301的面積A1小於第二有機層1302的面積A2,但本發明不限於此。在其他實施例中,亦可以是面積A1等於或大於面積A2。 3A is a top view of a substrate structure in accordance with a fourth embodiment of the present invention. Intention, and Fig. 3B is a schematic cross-sectional view taken along line I-I' in Fig. 3A. 3A to 3B are similar to the structures and manufacturing methods of the above-described embodiments of Figs. 1A to 1D, and therefore the same or similar elements are denoted by the same or similar symbols, and the description thereof will not be repeated. Referring to FIG. 3A to FIG. 3B , the embodiment of FIG. 3A to FIG. 3B is different from the embodiment of FIG. 1A to FIG. 1D in that, in the substrate structure 100C, the area A1 of the first organic layer 1301 is smaller than the second organic layer. The area A2 of the layer 1302, but the invention is not limited thereto. In other embodiments, the area A1 may be equal to or greater than the area A2.
第二無機層1202覆蓋了第一有機層1301的上表面1301a 以及側壁1301b。在本實施例中,第二無機層1202的側壁1202b與第一有機層1301的側壁1301b之間的距離為B,第一無機層1201的厚度為A,且距離B大於厚度A。因此,第一有機層1301的側壁1301b可以受到第二無機層1202的保護,以避免水氧從側向滲透至第一有機層1301,進而可改善第一有機層1301的側向阻氣能力。然而,本發明不限於此,在其他實施例中,亦可以是距離B等於或小於厚度A。 The second inorganic layer 1202 covers the upper surface 1301a of the first organic layer 1301 And a side wall 1301b. In the present embodiment, the distance between the sidewall 1202b of the second inorganic layer 1202 and the sidewall 1301b of the first organic layer 1301 is B, the thickness of the first inorganic layer 1201 is A, and the distance B is greater than the thickness A. Therefore, the sidewall 1301b of the first organic layer 1301 may be protected by the second inorganic layer 1202 to prevent water oxygen from penetrating laterally to the first organic layer 1301, thereby improving the lateral gas barrier capability of the first organic layer 1301. However, the present invention is not limited thereto, and in other embodiments, the distance B may be equal to or smaller than the thickness A.
圖4至圖8分別為依照本發明的第五至第九實施例的基 板結構的剖面示意圖。圖4至圖8之實施例與上述圖1A至圖1D之實施例的結構以及製造方法相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。圖4至圖8之實施例與上述圖1A至圖1D之實施例的不同之處在於:基板結構更包括多個間隙物,且這些間隙物可以位於底有機層110或有機層130中,或者是位於基板結構的上表面上,詳細說明如下。 4 to 8 are the bases of the fifth to ninth embodiments according to the present invention, respectively. A schematic cross-sectional view of the plate structure. The embodiment of FIGS. 4 to 8 is similar to the structure and manufacturing method of the above-described embodiment of FIGS. 1A to 1D, and therefore the same or similar elements are denoted by the same or similar symbols, and the description thereof will not be repeated. The embodiment of FIGS. 4-8 differs from the embodiment of FIGS. 1A to 1D described above in that the substrate structure further includes a plurality of spacers, and the spacers may be located in the bottom organic layer 110 or the organic layer 130, or It is located on the upper surface of the substrate structure and is described in detail below.
請參照圖4,在基板結構100D中,至少一第一間隙物152 位於底有機層110中,且第一間隙物152的高度Hs可相當於底有機層110的厚度Tb。在本實施例中,第一間隙物152配置在鄰近於底有機層110的側壁110b處,其中第一間隙物152可為一連續且封閉的環形結構或是不連續的區段結構環繞於底有機層110的側壁110b,因此底有機層110的側壁110b可以受到第一間隙物152的保護,以避免水氧從側向滲透至底有機層110,進而可改善底有機層110的側向阻氣能力。然而,本發明不限於此,在 其他實施例中,第一間隙物152的截面可具有矩形、梯形或其他合適的形狀,只要可以避免水氧從側向滲透至底有機層110即可。 Referring to FIG. 4, in the substrate structure 100D, at least one first spacer 152 Located in the bottom organic layer 110, and the height Hs of the first spacer 152 may correspond to the thickness Tb of the bottom organic layer 110. In this embodiment, the first spacer 152 is disposed adjacent to the sidewall 110b of the bottom organic layer 110, wherein the first spacer 152 may be a continuous and closed annular structure or a discontinuous segment structure surrounding the bottom The sidewall 110b of the organic layer 110, so the sidewall 110b of the bottom organic layer 110 can be protected by the first spacer 152 to prevent water oxygen from penetrating laterally to the bottom organic layer 110, thereby improving the lateral resistance of the bottom organic layer 110. Gas ability. However, the invention is not limited thereto, In other embodiments, the cross section of the first spacer 152 may have a rectangular shape, a trapezoidal shape, or other suitable shape as long as water oxygen can be prevented from penetrating from the side to the bottom organic layer 110.
第一間隙物152的材料包括無機材料、有機材料、金屬複合材料、非金屬複合材料、金屬材料或其組合。無機材料例如是氧化矽、氮化矽或氮氧化矽。有機材料例如是光阻。金屬複合材料例如是含銀複合材料、含鋁複合材料或其他金屬複合材料。 第一間隙物152的形成方法例如是灑佈(spray)、網版印刷(screen print)、微影蝕刻法、低溫燒結或其他合適的方法。舉例來說,在採用圖1A的步驟來製作底有機層110前,可以先採用上述方法的其中一種在載板102(繪於圖1A)上製作出第一間隙物152。 The material of the first spacer 152 includes an inorganic material, an organic material, a metal composite material, a non-metal composite material, a metal material, or a combination thereof. The inorganic material is, for example, cerium oxide, cerium nitride or cerium oxynitride. The organic material is, for example, a photoresist. The metal composite material is, for example, a silver-containing composite material, an aluminum-containing composite material or other metal composite material. The method of forming the first spacers 152 is, for example, a spray, a screen print, a photolithography, a low temperature sintering, or other suitable method. For example, prior to the fabrication of the bottom organic layer 110 using the steps of FIG. 1A, a first spacer 152 can be fabricated on the carrier 102 (shown in FIG. 1A) using one of the methods described above.
請參照圖5,在基板結構100E中,至少一第一間隙物152位於第一有機層1301中,且第一間隙物152的高度Hs可相當於第一有機層1301的厚度T1。再者,至少一第二間隙物154亦位於第一有機層1301中,且第二間隙物154的高度Hs’亦可相當於第一有機層1301的厚度T1。在本實施例中,第一間隙物152配置在鄰近於第一有機層1301的側壁1301b處,因此第一有機層1301的側壁1301b可以受到第一間隙物152的保護,以避免水氧從側向滲透至第一有機層1301,進而可改善第一有機層1301的側向阻氣能力。再者,第二間隙物154配置在第一有機層1301中的任意位置或具有任何合適的形狀,只要可以維持第一有機層1301的厚度T1即可。然而,本發明不限於此,在其他實施例中,第一有機層1301中亦可以是僅具有第一間隙物152或第二間隙物 154,第一間隙物152或第二間隙物154的截面可具有矩形、梯形或其他合適的形狀。此外,第一間隙物152或第二間隙物154亦可以是位於第二有機層1302或其他有機層(未繪示)中。第一間隙物152或第二間隙物154可為一連續且封閉的環形結構或是不連續的區段結構分佈於第一有機層1301、第二有機層1302或其他有機層(未繪示)中。 Referring to FIG. 5 , in the substrate structure 100E , at least one first spacer 152 is located in the first organic layer 1301 , and the height Hs of the first spacer 152 may correspond to the thickness T1 of the first organic layer 1301 . Furthermore, at least one second spacer 154 is also located in the first organic layer 1301, and the height Hs' of the second spacer 154 may also correspond to the thickness T1 of the first organic layer 1301. In the present embodiment, the first spacer 152 is disposed adjacent to the sidewall 1301b of the first organic layer 1301, so the sidewall 1301b of the first organic layer 1301 can be protected by the first spacer 152 to avoid water and oxygen from the side. The penetration into the first organic layer 1301 further improves the lateral gas barrier capability of the first organic layer 1301. Furthermore, the second spacer 154 is disposed at any position in the first organic layer 1301 or has any suitable shape as long as the thickness T1 of the first organic layer 1301 can be maintained. However, the present invention is not limited thereto. In other embodiments, the first organic layer 1301 may also have only the first spacer 152 or the second spacer. 154. The cross section of the first spacer 152 or the second spacer 154 may have a rectangular shape, a trapezoidal shape, or other suitable shape. In addition, the first spacer 152 or the second spacer 154 may also be located in the second organic layer 1302 or other organic layer (not shown). The first spacer 152 or the second spacer 154 may be a continuous and closed annular structure or a discontinuous segment structure distributed on the first organic layer 1301, the second organic layer 1302 or other organic layers (not shown) in.
第一間隙物152及第二間隙物154的形成方法可例如是 灑佈、網版印刷、微影蝕刻法、低溫燒結或其他合適的方法。第一間隙物152及第二間隙物154的材料可包括無機材料、有機材料、金屬複合材料、非金屬複合材料、金屬材料或其組合。無機材料例如是氧化矽、氮化矽或氮氧化矽。有機材料例如是光阻。 金屬複合材料例如是含銀複合材料、含鋁複合材料或其他金屬複合材料。當第一間隙物152或第二間隙物154的材料為金屬材料時,第一間隙物152或第二間隙物154的製作方法可以是燒結法,但不以此為限。 The method of forming the first spacer 152 and the second spacer 154 may be, for example, Spreading, screen printing, lithography, low temperature sintering or other suitable methods. The material of the first spacer 152 and the second spacer 154 may include an inorganic material, an organic material, a metal composite material, a non-metal composite material, a metal material, or a combination thereof. The inorganic material is, for example, cerium oxide, cerium nitride or cerium oxynitride. The organic material is, for example, a photoresist. The metal composite material is, for example, a silver-containing composite material, an aluminum-containing composite material or other metal composite material. When the material of the first spacer 152 or the second spacer 154 is a metal material, the first spacer 152 or the second spacer 154 may be formed by a sintering method, but not limited thereto.
請參照圖6,在基板結構100F中,多個第三間隙物155 例如位於第一有機層1301中,且第三間隙物155的高度Hb等於或小於第一有機層1301的厚度T1。第三間隙物155配置在第一有機層1301中的任意位置或具有任何合適的形狀,第三間隙物155的主要功能是在維持整體基板在彎曲時的形狀,其中有機層130的材質較軟,在彎曲時於彎曲點之厚度易較薄,非彎曲點較厚,此厚度變化可能會導致基板上的元件失效,因此在有機層130 中加入具有剛性的硬質間隙物,可以避免基板在彎曲時的厚度變化過大。然而,本發明不限於此,在其他實施例中,第三間隙物155的截面可各自具有圓形、橢圓形或其他合適的形狀。此外,多個第三間隙物155亦可以是位於第二有機層1302或其他有機層(未繪示)中。第三間隙物155的材料可包括無機材料、有機材料、金屬材料或其組合。無機材料例如是玻璃粉或陶瓷粉。有機材料例如是熱固型光阻。金屬材料例如是銀粉、鋁粉、鉛粉、不鏽鋼粉或其他金屬粉末。 Referring to FIG. 6, in the substrate structure 100F, a plurality of third spacers 155 For example, it is located in the first organic layer 1301, and the height Hb of the third spacer 155 is equal to or smaller than the thickness T1 of the first organic layer 1301. The third spacer 155 is disposed at any position in the first organic layer 1301 or has any suitable shape. The main function of the third spacer 155 is to maintain the shape of the whole substrate when it is bent, wherein the material of the organic layer 130 is soft. The thickness at the bending point is easy to be thin when bending, and the non-bending point is thick. This thickness variation may cause component failure on the substrate, and thus the organic layer 130 The addition of a rigid hard spacer adds to the excessive thickness variation of the substrate when it is bent. However, the present invention is not limited thereto, and in other embodiments, the cross sections of the third spacers 155 may each have a circular shape, an elliptical shape, or other suitable shape. In addition, the plurality of third spacers 155 may also be located in the second organic layer 1302 or other organic layers (not shown). The material of the third spacer 155 may include an inorganic material, an organic material, a metal material, or a combination thereof. The inorganic material is, for example, glass powder or ceramic powder. The organic material is, for example, a thermosetting photoresist. The metal material is, for example, silver powder, aluminum powder, lead powder, stainless steel powder or other metal powder.
請參照圖7,在基板結構100G中,至少一第四間隙物156 位於基板結構100G的上表面(例如,第二有機層1302的上表面1302a)上,且第四間隙物156的高度為Hs”。在本實施例中,第四間隙物156配置在鄰近於第二有機層1302的側壁1302b處,其中第四間隙物156可為一連續且封閉的環形結構或是不連續的區段結構環繞於第二有機層1302的側壁1302b上,因此當基板結構100G與另一對向基板(未繪示)構成封裝結構時,第四間隙物156的高度Hs”可相當於所述封裝結構的內部空間的高度,並可改善所述封裝結構內部空間的側向阻氣能力。然而,本發明不限於此,在其他實施例中,第四間隙物156的截面可具有矩形、梯形或其他合適的形狀,只要可以避免水氧從側向滲透至所述封裝結構的內部空間即可。第四間隙物156的形成方法例如是灑佈、網版印刷、微影蝕刻法、低溫燒結或其他合適的方法。第四間隙物156的材料可包括無機材料、有機材料、金屬複合材料、非金屬複 合材料、金屬材料或其組合。無機材料例如是氧化矽、氮化矽或氮氧化矽。有機材料例如是光阻。金屬複合材料例如是含銀複合材料、含鋁複合材料或其他金屬複合材料。 Referring to FIG. 7, in the substrate structure 100G, at least one fourth spacer 156 Located on the upper surface of the substrate structure 100G (eg, the upper surface 1302a of the second organic layer 1302), and the height of the fourth spacer 156 is Hs". In the present embodiment, the fourth spacer 156 is disposed adjacent to the first The sidewalls 1302b of the second organic layer 1302, wherein the fourth spacers 156 may be a continuous and closed annular structure or a discontinuous segment structure surrounds the sidewalls 1302b of the second organic layer 1302, thus when the substrate structure 100G and When the opposite substrate (not shown) constitutes a package structure, the height Hs" of the fourth spacer 156 may correspond to the height of the internal space of the package structure, and the lateral resistance of the inner space of the package structure may be improved. Gas ability. However, the present invention is not limited thereto. In other embodiments, the cross section of the fourth spacer 156 may have a rectangular shape, a trapezoidal shape or other suitable shape as long as water oxygen can be prevented from penetrating laterally into the inner space of the package structure. can. The method of forming the fourth spacers 156 is, for example, sprinkling, screen printing, lithography, low temperature sintering, or other suitable method. The material of the fourth spacer 156 may include inorganic materials, organic materials, metal composite materials, and non-metal complexes. Composite materials, metallic materials or a combination thereof. The inorganic material is, for example, cerium oxide, cerium nitride or cerium oxynitride. The organic material is, for example, a photoresist. The metal composite material is, for example, a silver-containing composite material, an aluminum-containing composite material or other metal composite material.
請參照圖8,在基板結構100H中,至少一第一間隙物152位於底有機層110中,第一間隙物152及多個第三間隙物155位於第一有機層1301中,且第四間隙物156位於基板結構100H的上表面(例如,第二有機層1302的上表面1302a)上,其中第一間隙物152、第三間隙物155及第四間隙物156的形狀可彼此不同。 然而,本發明不限於此,在其他實施例中,多個間隙物的配置亦可以是上述圖4至圖8實施例的任意組合。 Referring to FIG. 8 , in the substrate structure 100H , at least one first spacer 152 is located in the bottom organic layer 110 , and the first spacer 152 and the plurality of third spacers 155 are located in the first organic layer 1301 , and the fourth gap is The object 156 is located on the upper surface of the substrate structure 100H (for example, the upper surface 1302a of the second organic layer 1302), wherein the shapes of the first spacer 152, the third spacer 155, and the fourth spacer 156 may be different from each other. However, the present invention is not limited thereto. In other embodiments, the configuration of the plurality of spacers may also be any combination of the above-described embodiments of FIGS. 4 to 8.
另外,如圖9所示,當第一間隙物152的材料為有機材料時,無機層120例如第一無機層1201可選擇性地覆蓋住第一間隙物152。因此,第一間隙物152可以位於第一無機層1201與底有機層110之間,且第一無機層1201可以順應著第一間隙物152的輪廓配置。 In addition, as shown in FIG. 9, when the material of the first spacer 152 is an organic material, the inorganic layer 120 such as the first inorganic layer 1201 may selectively cover the first spacer 152. Therefore, the first spacer 152 may be located between the first inorganic layer 1201 and the bottom organic layer 110, and the first inorganic layer 1201 may conform to the contour configuration of the first spacer 152.
圖10為依照本發明的第十實施例的基板結構的剖面示意圖。圖10之實施例與上述圖1A至圖1D之實施例的結構以及製造方法相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。請參照圖10,圖10之實施例與上述圖1A至圖1D之實施例的不同之處在於,在基板結構100I中,第一有機層1301的面積A1小於底有機層110的面積,但本發明不限於此。 在其他實施例中,亦可以是面積A1等於或大於底有機層110的面 積。再者,基板結構100I更包括至少一第四間隙物156。 Figure 10 is a cross-sectional view showing the structure of a substrate in accordance with a tenth embodiment of the present invention. The embodiment of FIG. 10 is similar to the structure and manufacturing method of the above-described embodiment of FIGS. 1A to 1D, and therefore the same or similar elements are denoted by the same or similar symbols, and the description thereof will not be repeated. Referring to FIG. 10, the embodiment of FIG. 10 is different from the embodiment of FIG. 1A to FIG. 1D in that, in the substrate structure 100I, the area A1 of the first organic layer 1301 is smaller than the area of the bottom organic layer 110, but The invention is not limited to this. In other embodiments, the area A1 may be equal to or larger than the surface of the bottom organic layer 110. product. Furthermore, the substrate structure 100I further includes at least one fourth spacer 156.
第二無機層1202覆蓋了第一有機層1301的上表面1301a 以及側壁1301b。在本實施例中,第二無機層1202的側壁1202b與第一有機層1301的側壁1301b之間的距離為B,第一無機層1201的厚度為A,且距離B大於厚度A。因此,第一有機層1301的側壁1301b可以受到第二無機層1202的保護,以避免水氧從側向滲透至第一有機層1301,進而可改善第一有機層1301的側向阻氣能力。然而,本發明不限於此,在其他實施例中,亦可以是距離B等於或小於厚度A。 The second inorganic layer 1202 covers the upper surface 1301a of the first organic layer 1301 And a side wall 1301b. In the present embodiment, the distance between the sidewall 1202b of the second inorganic layer 1202 and the sidewall 1301b of the first organic layer 1301 is B, the thickness of the first inorganic layer 1201 is A, and the distance B is greater than the thickness A. Therefore, the sidewall 1301b of the first organic layer 1301 may be protected by the second inorganic layer 1202 to prevent water oxygen from penetrating laterally to the first organic layer 1301, thereby improving the lateral gas barrier capability of the first organic layer 1301. However, the present invention is not limited thereto, and in other embodiments, the distance B may be equal to or smaller than the thickness A.
至少一第四間隙物156位於基板結構100I的上表面(例 如,第二無機層1202的上表面1202a)上,且第四間隙物156的高度為Hs”。在本實施例中,第四間隙物156配置在鄰近於第二無機層1202的側壁1202b處,其中第四間隙物156可為一連續且封閉的環形結構或是不連續的區段結構環繞於第二無機層1202的側壁1202b上,因此當基板結構100I與另一對向基板(未繪示)構成封裝結構時,第四間隙物156的高度Hs”可相當於所述封裝結構的內部空間的高度,並可改善所述封裝結構內部空間的側向阻氣能力。 At least one fourth spacer 156 is located on the upper surface of the substrate structure 100I (eg, For example, the upper surface 1202a) of the second inorganic layer 1202, and the height of the fourth spacer 156 is Hs". In the present embodiment, the fourth spacer 156 is disposed adjacent to the sidewall 1202b of the second inorganic layer 1202. The fourth spacer 156 may be a continuous and closed annular structure or a discontinuous segment structure surrounding the sidewall 1202b of the second inorganic layer 1202, thus when the substrate structure 100I and another opposite substrate (not drawn When the package structure is formed, the height Hs" of the fourth spacer 156 may correspond to the height of the internal space of the package structure, and the lateral gas barrier capability of the inner space of the package structure may be improved.
在上述圖4、圖5及圖8之實施例中是以第一間隙物152 位於底有機層110或第一有機層1301中(亦即,第一間隙物152的高度Hs可相當於底有機層110的厚度Tb或第一有機層1301的厚度T1)為例來說明,但本發明不限於此。在其他實施例中,第一 間隙物152亦可以是穿過至少一層有機層。換句話說,第一間隙物152的高度Hs亦可以是大於底有機層110的厚度Tb或第一有機層1301的厚度T1。 In the embodiment of FIGS. 4, 5 and 8 above, the first spacer 152 is The bottom organic layer 110 or the first organic layer 1301 (that is, the height Hs of the first spacer 152 may correspond to the thickness Tb of the bottom organic layer 110 or the thickness T1 of the first organic layer 1301) is taken as an example, but The invention is not limited thereto. In other embodiments, the first The spacers 152 may also be through at least one organic layer. In other words, the height Hs of the first spacer 152 may also be greater than the thickness Tb of the bottom organic layer 110 or the thickness T1 of the first organic layer 1301.
圖11為依照本發明的第十一實施例的基板結構的剖面示意圖。圖11之實施例與上述圖4之實施例的結構以及製造方法相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。圖11之實施例與上述圖4之實施例的不同之處在於,在基板結構100J中,至少一第一間隙物152凸出於底有機層110的上表面110a,且第一間隙物152的高度Hs大於底有機層110的厚度Tb。再者,第一無機層1201覆蓋了底有機層110、凸起物140以及第一間隙物152自上表面110a凸出的部分表面。第一有機層1301形成於第一無機層1201之上。 Figure 11 is a cross-sectional view showing the structure of a substrate in accordance with an eleventh embodiment of the present invention. The embodiment of FIG. 11 is similar to the structure and manufacturing method of the embodiment of FIG. 4 described above, and thus the same or similar elements are denoted by the same or similar symbols, and the description thereof will not be repeated. The embodiment of FIG. 11 is different from the embodiment of FIG. 4 described above in that, in the substrate structure 100J, at least one first spacer 152 protrudes from the upper surface 110a of the bottom organic layer 110, and the first spacer 152 The height Hs is greater than the thickness Tb of the bottom organic layer 110. Furthermore, the first inorganic layer 1201 covers the bottom organic layer 110, the protrusions 140, and a portion of the surface of the first spacer 152 protruding from the upper surface 110a. The first organic layer 1301 is formed over the first inorganic layer 1201.
在本實施例中,第一間隙物152配置在鄰近於底有機層110的側壁110b處以及凸出於底有機層110的上表面110a,因此底有機層110的側壁110b以及第一有機層1301的側壁1301b可以受到第一間隙物152的保護,以避免水氧從側向滲透至底有機層110以及第一有機層1301,進而可改善底有機層110以及第一有機層1301的側向阻氣能力。然而,本發明不限於此,在其他實施例中,第一間隙物152的截面可具有矩形、梯形或其他合適的形狀,只要可以避免水氧從側向滲透至底有機層110以及第一有機層1301即可。 In the present embodiment, the first spacer 152 is disposed adjacent to the sidewall 110b of the bottom organic layer 110 and protrudes from the upper surface 110a of the bottom organic layer 110, and thus the sidewall 110b of the bottom organic layer 110 and the first organic layer 1301 The sidewall 1301b may be protected by the first spacer 152 to prevent water oxygen from penetrating from the side to the bottom organic layer 110 and the first organic layer 1301, thereby improving the lateral resistance of the bottom organic layer 110 and the first organic layer 1301. Gas ability. However, the present invention is not limited thereto. In other embodiments, the cross section of the first spacer 152 may have a rectangular shape, a trapezoidal shape, or other suitable shape as long as water oxygen can be prevented from laterally penetrating to the bottom organic layer 110 and the first organic Layer 1301 can be.
圖12為依照本發明的第十二實施例的基板結構的剖面示 意圖。圖12之實施例與上述圖11之實施例的結構以及製造方法相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。圖12之實施例與上述圖11之實施例的不同之處在於,基板結構100K更包括第二無機層1202。第二無機層1202覆蓋了第一有機層1301的上表面1301a。更詳細來說,在基板結構100K中,至少一第一間隙物152凸出於底有機層110的上表面110a,且第一間隙物152的高度Hs大於底有機層110的厚度Tb。再者,第一無機層1201覆蓋了底有機層110、凸起物140以及第一間隙物152自上表面110a凸出的部分表面。第一有機層1301形成於第一無機層1201之上。第二無機層1202覆蓋了第一有機層1301的上表面1301a,且第二無機層1202具有平坦的上表面1202a。 然而,本發明不限於此,在其他實施例(未繪示)中,亦可以是至少一第一間隙物152凸出於第一有機層1301的上表面1301a,且第一間隙物152的高度Hs大於第一有機層1301的厚度T1。再者,第二無機層1202覆蓋了第一有機層1301以及第一間隙物152自上表面1301a凸出的部分表面。 Figure 12 is a cross-sectional view showing the structure of a substrate in accordance with a twelfth embodiment of the present invention. intention. The embodiment of Fig. 12 is similar to the structure and the manufacturing method of the embodiment of Fig. 11 described above, and therefore the same or similar elements are denoted by the same or similar symbols, and the description thereof will not be repeated. The embodiment of FIG. 12 differs from the embodiment of FIG. 11 described above in that the substrate structure 100K further includes a second inorganic layer 1202. The second inorganic layer 1202 covers the upper surface 1301a of the first organic layer 1301. In more detail, in the substrate structure 100K, at least one first spacer 152 protrudes from the upper surface 110a of the bottom organic layer 110, and the height Hs of the first spacer 152 is greater than the thickness Tb of the bottom organic layer 110. Furthermore, the first inorganic layer 1201 covers the bottom organic layer 110, the protrusions 140, and a portion of the surface of the first spacer 152 protruding from the upper surface 110a. The first organic layer 1301 is formed over the first inorganic layer 1201. The second inorganic layer 1202 covers the upper surface 1301a of the first organic layer 1301, and the second inorganic layer 1202 has a flat upper surface 1202a. However, the present invention is not limited thereto. In other embodiments (not shown), at least one first spacer 152 may protrude from the upper surface 1301a of the first organic layer 1301, and the height of the first spacer 152 may be Hs is greater than the thickness T1 of the first organic layer 1301. Furthermore, the second inorganic layer 1202 covers the first organic layer 1301 and a portion of the surface of the first spacer 152 protruding from the upper surface 1301a.
圖13為依照本發明的第十三實施例的基板結構的剖面示 意圖。圖13之實施例與上述圖12之實施例的結構以及製造方法相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。圖13之實施例與上述圖12之實施例的不同之處在於,基板結構100L更包括至少一第四間隙物156。第四間隙物156位於基板結構100L的上表面(例如,第二無機層1202的上表面1202a) 上,且第四間隙物156的高度為Hs”。在本實施例中,第四間隙物156配置在鄰近於第二無機層1202的側壁1202b處,其中第四間隙物156可為一連續且封閉的環形結構或是不連續的區段結構環繞於第二無機層1202的側壁1202b上,因此當基板結構100L與另一對向基板(未繪示)構成封裝結構時,第四間隙物156的高度Hs”可相當於所述封裝結構的內部空間的高度,並可改善所述封裝結構內部空間的側向阻氣能力。 Figure 13 is a cross-sectional view showing the structure of a substrate in accordance with a thirteenth embodiment of the present invention. intention. The embodiment of Fig. 13 is similar to the structure and manufacturing method of the embodiment of Fig. 12 described above, and therefore the same or similar elements are designated by the same or similar symbols, and the description thereof will not be repeated. The embodiment of FIG. 13 is different from the embodiment of FIG. 12 described above in that the substrate structure 100L further includes at least a fourth spacer 156. The fourth spacer 156 is located on the upper surface of the substrate structure 100L (for example, the upper surface 1202a of the second inorganic layer 1202) The height of the fourth spacer 156 is Hs". In the embodiment, the fourth spacer 156 is disposed adjacent to the sidewall 1202b of the second inorganic layer 1202, wherein the fourth spacer 156 can be continuous and The closed annular structure or the discontinuous segment structure surrounds the sidewall 1202b of the second inorganic layer 1202. Therefore, when the substrate structure 100L and another opposite substrate (not shown) constitute a package structure, the fourth spacer 156 The height Hs" may correspond to the height of the inner space of the package structure and may improve the lateral gas barrier capability of the inner space of the package structure.
圖14為依照本發明一實施例的封裝結構的剖面示意圖。 請參照圖14,封裝結構200A例如是有機電激發光元件(Organic Light Emitting Device,OLED)或其他合適的元件的封裝結構。在下文中,將以封裝結構200A為有機電激發光元件的封裝結構為例來進行說明。封裝結構200A至少包括第一基板210、有機電激發光元件212以及第二基板220。 14 is a cross-sectional view of a package structure in accordance with an embodiment of the present invention. Referring to FIG. 14, the package structure 200A is, for example, a package structure of an organic light emitting device (OLED) or other suitable components. Hereinafter, a package structure in which the package structure 200A is an organic electroluminescence element will be described as an example. The package structure 200A includes at least a first substrate 210, an organic electroluminescent element 212, and a second substrate 220.
第一基板210與第二基板220相對設置。第一基板210 或第二基板220至少其中之一具有上述的基板結構100A~100L中的其中一種。 The first substrate 210 is disposed opposite to the second substrate 220. First substrate 210 Or at least one of the second substrates 220 has one of the above-described substrate structures 100A to 100L.
有機電激發光元件212配置在第一基板210與第二基板 220之間。在本實施例中,有機電激發光元件212例如是配置於第一基板210上,但本發明不限於此。在其他實施例中,有機電激發光元件212亦可以是配置於封裝結構200A的內部空間R的任意位置。有機電激發光元件212例如是主動式有機電激發光元件或被動式有機電激發光元件,其中主動式有機電激發光元件或被動 式有機電激發光元件可再細分為例如下發光型有機電激發光元件或上發光型有機電激發光元件等,且有機電激發光元件212可以是一顯示器或一面光源等。 The organic electroluminescent element 212 is disposed on the first substrate 210 and the second substrate Between 220. In the present embodiment, the organic electroluminescent device 212 is disposed on the first substrate 210, for example, but the invention is not limited thereto. In other embodiments, the organic electroluminescent device 212 may be disposed at any position of the internal space R of the package structure 200A. The organic electroluminescent device 212 is, for example, an active organic electroluminescent device or a passive organic electroluminescent device, wherein the active organic electroluminescent device or passive The organic electroluminescent device can be further subdivided into, for example, a lower emission type organic electroluminescence element or an upper emission type organic electroluminescence element, and the organic electroluminescence element 212 can be a display or a side light source or the like.
舉例來說,如圖15A及圖15B所示,第一基板210例如 是包括底有機層110、無機層120、有機層130、至少一第一間隙物152以及至少一第二間隙物154,且有機電激發光元件212例如是配置於第一基板210的第三無機層1203的上表面1203a上。如圖15A所示,當有機電激發光元件212為下發光型有機電激發光元件時,有機電激發光元件212不與第一間隙物152或第二間隙物154重疊設置(例如第一間隙物152或第二間隙物154可圍繞有機電激發光元件212的周圍設置),以避免有機電激發光元件212所發射出的光線被間隙物遮蔽。相反地,如圖15B所示,當有機電激發光元件212為上發光型有機電激發光元件時,有機電激發光元件212可與第一間隙物152或第二間隙物154重疊設置(例如有機電激發光元件212可配置於具有第一間隙物152或第二間隙物154的範圍之上)。然而,本發明不限於此,在其他實施例中,間隙物的配置亦可以是上述圖4至圖13實施例的任意組合。 For example, as shown in FIGS. 15A and 15B, the first substrate 210 is, for example, The bottom organic layer 110, the inorganic layer 120, the organic layer 130, the at least one first spacer 152, and the at least one second spacer 154, and the organic electroluminescent device 212 is, for example, a third inorganic component disposed on the first substrate 210. On the upper surface 1203a of layer 1203. As shown in FIG. 15A, when the organic electroluminescent device 212 is a lower-emitting organic electroluminescent device, the organic electroluminescent device 212 is not disposed overlapped with the first spacer 152 or the second spacer 154 (for example, the first gap) The object 152 or the second spacer 154 may be disposed around the periphery of the organic electroluminescent element 212 to prevent the light emitted by the organic electroluminescent element 212 from being obscured by the spacer. Conversely, as shown in FIG. 15B, when the organic electroluminescent device 212 is an upper-emission type organic electroluminescent device, the organic electroluminescent device 212 may be disposed overlapping the first spacer 152 or the second spacer 154 (for example, The organic electroluminescent element 212 can be disposed over a range having the first spacer 152 or the second spacer 154). However, the present invention is not limited thereto, and in other embodiments, the arrangement of the spacers may also be any combination of the above-described embodiments of FIGS. 4 to 13.
請再參照圖14,在本實施例中,封裝結構200A例如是 更包括框膠230。框膠230配置於第一基板210與第二基板220之間。第一基板210與第二基板220可藉由框膠230接合。在其他實施例中,框膠230也可以用熔接膠(諸如玻璃熔接膠)或其他合適的黏著層代替,或者是組合使用。此外,使用圖7的基板結構 100G、圖8的基板結構100H、圖10的基板結構100I或圖13的基板結構100L作為第一基板210時,第四間隙物156可以有助於提升封裝結構200A的側向阻氣能力。然而,本發明不限於此,在其他實施例中,第四間隙物156亦可以是圍成一連續且封閉的環形結構或是不連續的區段結構。第四間隙物156可配置於第一基板210與第二基板220之間,且可再藉由黏著層(未繪示)取代框膠230使第一基板210上的第四間隙物156與第二基板220接合。 Referring to FIG. 14 again, in the embodiment, the package structure 200A is, for example, More includes the frame glue 230. The sealant 230 is disposed between the first substrate 210 and the second substrate 220. The first substrate 210 and the second substrate 220 may be joined by the sealant 230. In other embodiments, the sealant 230 may also be replaced with a fusion glue (such as a glass bond) or other suitable adhesive layer, or in combination. In addition, the substrate structure of FIG. 7 is used. When 100G, the substrate structure 100H of FIG. 8, the substrate structure 100I of FIG. 10, or the substrate structure 100L of FIG. 13 as the first substrate 210, the fourth spacers 156 may contribute to the lateral gas barrier capability of the package structure 200A. However, the present invention is not limited thereto. In other embodiments, the fourth spacer 156 may also be a continuous and closed annular structure or a discontinuous segment structure. The fourth spacer 156 can be disposed between the first substrate 210 and the second substrate 220, and the fourth spacer 156 on the first substrate 210 can be replaced by an adhesive layer (not shown). The two substrates 220 are joined.
在上述圖14之實施例中是以封裝結構200A更包括框膠230為例來說明,但本發明不限於此。在其他實施例中,亦可以是具有其他合適的封裝結構。 In the embodiment of FIG. 14 described above, the package structure 200A further includes the frame glue 230 as an example, but the invention is not limited thereto. In other embodiments, other suitable package structures are also possible.
圖16至圖19分別為依照本發明其他實施例的封裝結構 的剖面示意圖。圖16至圖19之實施例與上述圖14之實施例的結構相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。圖16至圖19之實施例與上述圖14之實施例的不同之處在於封裝結構不同。 16 to 19 are package structures according to other embodiments of the present invention, respectively. Schematic diagram of the section. The embodiment of FIGS. 16 to 19 is similar to the structure of the embodiment of FIG. 14 described above, and thus the same or similar elements are denoted by the same or similar symbols, and the description thereof will not be repeated. The embodiment of Figures 16 through 19 differs from the embodiment of Figure 14 above in that the package structure is different.
請參照圖16,封裝結構200B包括第一基板210、有機電激發光元件212、第二基板220、保護層240以及膠材250。保護層240覆蓋第一基板210以及有機電激發光元件212,且保護層240位於第一基板210與第二基板220之間。保護層240的材料可例如是無機材料、有機材料或其他合適的材料。無機材料包括氧化矽、氮化矽、氮氧化矽、氧化鋁、鋁或其他合適的無機阻氣材料。膠材250配置於第一基板210與第二基板220之間,以使第 一基板210與第二基板220可藉由膠材250接合。在其他實施例中,膠材250也可以用熔接膠(諸如玻璃熔接膠)或其他合適的黏著層代替,或者是組合使用。 Referring to FIG. 16 , the package structure 200B includes a first substrate 210 , an organic electroluminescent device 212 , a second substrate 220 , a protective layer 240 , and a glue 250 . The protective layer 240 covers the first substrate 210 and the organic electroluminescent device 212 , and the protective layer 240 is located between the first substrate 210 and the second substrate 220 . The material of the protective layer 240 may be, for example, an inorganic material, an organic material, or other suitable material. Inorganic materials include cerium oxide, cerium nitride, cerium oxynitride, aluminum oxide, aluminum or other suitable inorganic gas barrier materials. The glue 250 is disposed between the first substrate 210 and the second substrate 220 to enable A substrate 210 and the second substrate 220 may be joined by a glue 250. In other embodiments, the glue 250 may also be replaced with a fusion glue (such as a glass bond) or other suitable adhesive layer, or in combination.
請參照圖17,封裝結構200C包括第一基板210、有機電 激發光元件212、第二基板220、至少一第四間隙物156以及保護層240。例如使用圖7的基板結構100G、圖8的基板結構100H、圖10的基板結構100I或圖13的基板結構100L作為第一基板210時,第四間隙物156可以有助於提升封裝結構200C的側向阻氣能力。然而,本發明不限於此,在其他實施例中,第四間隙物156亦可以是圍成一連續且封閉的環形結構或是不連續的區段結構。再者,保護層240覆蓋第一基板210、有機電激發光元件212以及第四間隙物156,且保護層240位於第一基板210與第二基板220之間。此外,在本實施例中,可再藉由黏著層(未繪示)使第一基板210與第二基板220接合。 Referring to FIG. 17, the package structure 200C includes a first substrate 210 and an organic battery. The light-emitting element 212, the second substrate 220, the at least one fourth spacer 156, and the protective layer 240 are provided. For example, when the substrate structure 100G of FIG. 7, the substrate structure 100H of FIG. 8, the substrate structure 100I of FIG. 10, or the substrate structure 100L of FIG. 13 is used as the first substrate 210, the fourth spacers 156 may contribute to the lifting of the package structure 200C. Lateral gas barrier capability. However, the present invention is not limited thereto. In other embodiments, the fourth spacer 156 may also be a continuous and closed annular structure or a discontinuous segment structure. Furthermore, the protective layer 240 covers the first substrate 210, the organic electroluminescent device 212, and the fourth spacer 156, and the protective layer 240 is located between the first substrate 210 and the second substrate 220. In addition, in the embodiment, the first substrate 210 and the second substrate 220 can be joined by an adhesive layer (not shown).
請參照圖18,封裝結構200D與封裝結構200C的不同之 處在於,封裝結構200D更包括吸氣劑260。吸氣劑260位於第一基板210與第二基板220之間。吸氣劑260是用以維持元件內部的真空,並且能夠吸附部分的氣體分子。吸氣劑260可包括非蒸散型吸氣劑、蒸散型吸氣劑或其組合。 Referring to FIG. 18, the package structure 200D is different from the package structure 200C. The package structure 200D further includes a getter 260. The getter 260 is located between the first substrate 210 and the second substrate 220. The getter 260 is used to maintain a vacuum inside the element and is capable of adsorbing a portion of the gas molecules. The getter 260 may include a non-evaporable getter, an evapotranspiration getter, or a combination thereof.
請參照圖19,封裝結構200E包括第一基板210、有機電 激發光元件212、第二基板220、保護層240以及阻氣膜270。保護層240覆蓋第一基板210以及有機電激發光元件212,且保護層 240位於第一基板210與第二基板220之間。阻氣膜270包覆封裝結構200E的部分上表面200a、整個側面200b以及部分下表面200c。阻氣膜270例如是金屬箔、塑膠阻氣膜或其他合適的外貼(包)阻氣膜。此外,在本實施例中,可再藉由黏著層(未繪示)使第一基板210與第二基板220接合。 Referring to FIG. 19, the package structure 200E includes a first substrate 210 and an organic battery. The light-emitting element 212, the second substrate 220, the protective layer 240, and the gas barrier film 270 are provided. The protective layer 240 covers the first substrate 210 and the organic electroluminescent element 212, and the protective layer The 240 is located between the first substrate 210 and the second substrate 220. The gas barrier film 270 covers a portion of the upper surface 200a of the package structure 200E, the entire side surface 200b, and a portion of the lower surface 200c. The gas barrier film 270 is, for example, a metal foil, a plastic gas barrier film, or other suitable outer (package) gas barrier film. In addition, in the embodiment, the first substrate 210 and the second substrate 220 can be joined by an adhesive layer (not shown).
在本實施例中採用具有良好阻氣能力的阻氣基板(如基板結構100A~100L所示)來對有機電激發光元件212進行封裝,因此可阻隔水氣及氧氣的穿透以避免有機電激發光元件212劣化而導致壽命減短的問題,故可使有機電激發光元件212具有良好的可靠度。 In the present embodiment, the gas barrier substrate (shown as the substrate structures 100A to 100L) having a good gas barrier capability is used to encapsulate the organic electroluminescent device 212, thereby blocking the penetration of moisture and oxygen to avoid organic electricity. The excitation light element 212 is deteriorated to cause a problem of shortened lifetime, so that the organic electroluminescence element 212 can have good reliability.
在本發明一實施例的基板結構中,由於T(各層有機層的厚度)1.1H(前一層有機層上的凸起物的凸起高度)或T1(前一層有機層的厚度)T2(各層有機層的厚度),因此各層有機層的厚度能覆蓋且平坦前一層有機層上的凸起物,以使基板結構的上表面較為平坦,進而可改善基板結構的阻氣(包括水氣及氧氣)特性。在一實施例中,有機層可採用對溫度耐受性佳的材料,以使耐高溫的有機層具有較平坦的上表面(因無氣泡形成),因此可避免在其上所形成的無機層的厚度不均勻、上表面不平坦以及膜層不連續(諸如斷開)等問題,進而可使基板結構具有更佳的阻氣特性以及撓曲特性。 In the substrate structure of an embodiment of the present invention, due to T (thickness of each layer of organic layers) 1.1H (the raised height of the protrusion on the previous organic layer) or T1 (the thickness of the previous organic layer) T2 (thickness of each layer of organic layer), so the thickness of each layer of the organic layer can cover and flatten the protrusion on the previous layer of the organic layer, so that the upper surface of the substrate structure is relatively flat, thereby improving the gas barrier of the substrate structure (including water) Gas and oxygen) characteristics. In an embodiment, the organic layer may be made of a material that is resistant to temperature so that the high temperature resistant organic layer has a relatively flat upper surface (because of no bubble formation), thereby avoiding the inorganic layer formed thereon. The thickness is not uniform, the upper surface is not flat, and the film layer is discontinuous (such as breaking), which in turn allows the substrate structure to have better gas barrier properties and flexural properties.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的 精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art without departing from the invention. In the spirit and scope, the scope of protection of the present invention is subject to the definition of the appended patent application.
100A‧‧‧基板結構 100A‧‧‧Substrate structure
110‧‧‧底有機層 110‧‧‧ bottom organic layer
110a、1301a、1302a‧‧‧上表面 110a, 1301a, 1302a‧‧‧ upper surface
120‧‧‧無機層 120‧‧‧Inorganic layer
130‧‧‧有機層 130‧‧‧Organic layer
140、140’‧‧‧凸起物 140, 140’‧‧‧ Protrusions
1201‧‧‧第一無機層 1201‧‧‧First inorganic layer
1202‧‧‧第二無機層 1202‧‧‧Second inorganic layer
1301‧‧‧第一有機層 1301‧‧‧First organic layer
1302‧‧‧第二有機層 1302‧‧‧Second organic layer
D、D’‧‧‧最大深度 D, D’‧‧‧Maximum depth
H、H’‧‧‧最大高度 H, H’‧‧‧Maximum height
T1、T2、Tb‧‧‧厚度 T1, T2, Tb‧‧‧ thickness
Tt‧‧‧總厚度 Tt‧‧‧ total thickness
Claims (30)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/279,327 US20140370228A1 (en) | 2013-06-13 | 2014-05-16 | Substrate structure |
| CN201410231052.XA CN104241206B (en) | 2013-06-13 | 2014-05-28 | Substrate structure |
| US15/437,454 US20170162827A1 (en) | 2013-06-13 | 2017-02-21 | Substrate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| US201361834431P | 2013-06-13 | 2013-06-13 |
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| JPWO2005099311A1 (en) * | 2004-04-05 | 2008-03-06 | 出光興産株式会社 | Organic electroluminescence display device |
| US20070020451A1 (en) * | 2005-07-20 | 2007-01-25 | 3M Innovative Properties Company | Moisture barrier coatings |
| CN101467194B (en) * | 2006-06-15 | 2010-12-01 | 夏普株式会社 | Display device and method for manufacturing the same |
| JP4809186B2 (en) * | 2006-10-26 | 2011-11-09 | 京セラ株式会社 | Organic EL display and manufacturing method thereof |
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