TW201419358A - Ion implantation device and ion implantation method - Google Patents

Abstract

The present invention provides an ion implantation apparatus and an ion implantation method advantageous in increasing the productivity. The ion implantation apparatus (10) of the present invention comprises: an ion source (18) having a draw-out electrode system (24) for drawing out a sheet-beam (12); and a processing chamber (26) for receiving the sheet-beam (12) from the ion source (18). The processing chamber (26) is constructed to enable a substrate (S) to pass through an ion beam irradiation area (14). The sheet-beam (12) has the feature of being determined by the ion beam generation condition of the ion source (18). During the substrate (S) passes through the ion beam irradiation area (14), the sheet-beam (12) keeps an irradiating beam feature from the draw-out electrode system (24) to the ion beam irradiation area (14), so as to directly irradiate the moving substrate (S) in the ion beam irradiation area (14).

Description

Ion implantation device and ion implantation method

The present invention relates to an ion implantation, and more particularly to an ion implantation apparatus and an ion implantation method.

A beam line ion implantation apparatus for manufacturing a solar cell is known (for example, refer to Patent Documents 1 and 2). In this device, an ion beam extracted from an ion source is transported to a terminal station via a beam line having a mass spectrometer, a decomposition aperture, and an angle correction magnet. Unwanted ion species are blocked by the shielding electrode without decomposing the aperture.

(previous technical literature) (Patent Literature)

Patent Document 1: Japanese Patent Publication No. 2011-513997

Patent Document 2: US Patent Application Publication No. 2010/0197126

Even if it is possible to apply the principle of ion implantation in principle, due to the economic side There are also reasons for not applying ion implantation. Since the prior ion implantation devices are relatively expensive, in such projects, ion implantation is not commensurate with the production cost required for the equipment produced in the project.

Representative examples of such engineering are several projects for fabricating solar cell substrates. By applying ion implantation to such engineering, it is possible to accurately control the distribution of the dose and depth directions of impurities implanted into the solar cell substrate. Thereby, the performance of the solar cell can be expected to be improved. However, the ion beam current used for implantation does not reach the required level. Therefore, ion implantation fails to give sufficient productivity to the manufacture of solar cell substrates.

One of the illustrative purposes of the present invention is to provide an ion implantation apparatus and an ion implantation method that impart high beam currents that contribute to the productivity of several projects.

According to an aspect of the present invention, an ion implantation apparatus includes: an ion source, a plasma chamber, a plasma source for generating plasma in the plasma chamber, and a The plasma chamber extracts an extraction electrode system of an ion beam having a long beam profile; the processing chamber is disposed adjacent to the ion source, and receives the ion beam from the extraction electrode system, and is configured to pass the substrate along the ion a substrate moving mechanism for moving the substrate movement path in the beam irradiation region; and a control portion for controlling ion beam generation conditions of the ion source; wherein the ion beam has a beam current determined by the ion beam generation condition; and the ion The beam is maintained from the aforementioned extraction electrode system to maintain the aforementioned beam current, and is directly irradiated to the aforementioned ion beam irradiation The shot area moves on the substrate.

According to another aspect of the present invention, an ion implantation method is provided, wherein the ion implantation method has a process of controlling ion beam generation conditions of an ion source, and extracting an ion beam by an extraction electrode system of the ion source; The source receives the ion beam to the processing chamber; and moves the substrate to pass through the ion beam irradiation region of the processing chamber, the ion beam having a beam current determined by the ion beam generation condition, the ion beam being maintained from the extraction electrode system The beam current is directly irradiated onto the substrate in which the ion beam irradiation region is moved.

According to still another aspect of the present invention, an ion implantation apparatus includes: an ion source provided with an extraction electrode system for extracting an ion beam; and a processing chamber that receives the ion beam from the ion source, The ion beam is configured to pass through the ion beam irradiation region, and the ion beam has a characteristic determined by ion beam generation conditions of the ion source, and is maintained from the extraction electrode system to the ion beam irradiation region while the substrate passes through the ion beam irradiation region. The foregoing characteristics are directly irradiated onto the substrate in which the aforementioned ion beam irradiation region is moved.

According to still another aspect of the present invention, an ion implantation method is provided, wherein the ion implantation method has a process of: extracting an ion beam by an extraction electrode system of an ion source; and receiving the ion beam from the ion source to a processing chamber; And passing the substrate through the ion beam irradiation region of the processing chamber, wherein the ion beam has a characteristic determined by ion beam generation conditions of the ion source, and the extraction electrode system from the extraction electrode system to the ion beam during the passage of the substrate through the ion beam irradiation region The irradiated area maintains the aforementioned characteristics and is directly irradiated On the substrate in which the aforementioned ion beam irradiation region is moved.

Further, any combination of the above constituent elements and the constituent elements or expressions of the present invention in place of the method, the device, the system, the program, and the like are also effective as the mode of the present invention.

According to the present invention, it is possible to provide an ion implantation apparatus and an ion implantation method which contribute to improvement in productivity.

10‧‧‧Ion implant device

12‧‧‧ Banded bundle

14‧‧‧Ion beam region

18‧‧‧Ion source

20‧‧‧Plastic chamber

21‧‧‧ Plasma

22‧‧‧ Plasma source

24‧‧‧Extracting electrode system

26‧‧‧Processing chamber

32‧‧‧Control Department

36‧‧‧ gas supply

40‧‧‧RF antenna

50‧‧‧Exit opening

56‧‧‧Extraction electrode

120‧‧‧Transportation control device

A‧‧‧ substrate moving path

S‧‧‧Substrate

Vex‧‧‧Extracted voltage

Vs‧‧‧ substrate scanning speed

Fig. 1 is a view showing an ion implantation apparatus according to an embodiment of the present invention.

Fig. 2 is a perspective view showing a part of an ion implantation apparatus according to an embodiment of the present invention.

Fig. 3 is a view showing an extraction electrode system of an ion implantation apparatus according to an embodiment of the present invention.

Fig. 4 is a plan view showing a beam measuring system of an ion implantation apparatus according to an embodiment of the present invention.

Fig. 5 is a view showing an implant distribution obtained by an ion implantation apparatus according to an embodiment of the present invention.

Fig. 6 is a plan view showing a linear vacuum chamber system for an ion implantation apparatus according to an embodiment of the present invention.

Fig. 7 is a flow chart showing an ion implantation method according to an embodiment of the present invention.

Hereinafter, embodiments for carrying out the invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and the repeated description is omitted as appropriate. Further, the configurations described below are merely examples, and are not intended to limit the scope of the invention.

An ion implantation apparatus according to an embodiment of the present invention is configured to control characteristics of an ion beam implanted in an ion stage of a substrate in an ion beam generation stage. The ion beam generation phase refers to the extraction of ions from the source of the generated ions, that is, the plasma. An ion beam is generated by extracting ions. The extracted ions are implanted onto the substrate.

Thus, the ion beam with the controlled beam characteristics is directly illuminated onto the substrate. Since the beam line from the extracted ions to the implanted ions can be made extremely short, ion loss during transport can be minimized. Thereby, since the ions can be implanted onto the substrate with a high beam current at the time of extraction, it is possible to provide an ion implantation apparatus having high productivity.

Fig. 1 is a view showing an ion implantation apparatus 10 according to an embodiment of the present invention. Fig. 1 is a view of the ion implantation apparatus 10 as viewed from the side. Fig. 2 is a perspective view showing a part of the ion implantation apparatus 10 according to an embodiment of the present invention. Also shown in Fig. 2 is a partial cross-section of the ion implantation apparatus 10 having a plane parallel to the plane of the drawing in Fig. 1. The section area in Figure 2 is attached with a diagonal line.

The ion implantation apparatus 10 is configured to irradiate the ion beam 12 onto the substrate S. The ion beam 12 has a longitudinal direction (vertical to the plane of the paper in Fig. 1) Long beam profile extending in direction). The ion beam 12 is sometimes referred to as a ribbon beam 12 hereinafter. The ribbon beam 12 forms an ion beam irradiation region (hereinafter also referred to as an ion beam region) 14 corresponding to its cross section in the processing chamber 26. At a particular point in time, the ion beam region 14 is at a particular portion of the surface of the substrate S. For ease of understanding, small dots are attached to the ion beam region 14 in FIG. The substrate S passes through the ion beam region 14 along the substrate moving path A in the processing chamber 26. In this way, ion implantation can be performed over a wide range of the surface of the substrate S.

In this embodiment, the substrate S is a substrate for a solar cell or a solar cell. Therefore, the ion implantation apparatus 10 is used to manufacture a solar cell substrate. The substrate S is generally a semiconductor member having a flat plate shape, but the substrate S may have a processed object of any other shape and material. The substrate S may be one large substrate or a plurality of small substrates. When the substrate S refers to a plurality of substrates, the substrate S may include a container such as a tray for arranging the substrates into a flat surface (for example, a matrix). The tray may be configured such that each row on the substrate arranged in a matrix of four or more columns can be simultaneously implanted. There is also a case where the substrate S is covered by the mask. Hereinafter, for convenience of explanation, the substrate, the container, the mask, and other objects to be processed may be collectively referred to as a substrate S.

As shown in Fig. 1, the ion implantation apparatus 10 includes an ion source 18 configured to generate a band beam 12. Ion source 18 imparts a ribbon 12 to central chamber 16. The ion source 18 includes a plasma chamber 20, a plasma source 22 for generating a plasma 21 in the plasma chamber 20, and an extraction electrode system 24 for extracting the ribbon beam 12 from the plasma chamber 20. Moreover, the ion implantation apparatus 10 is provided for The ion source 18 and central chamber 16 provide a vacuum evacuation system (not shown) in a desired vacuum environment.

The ion implantation device 10 is provided with a central chamber 16. Central chamber 16 is coupled to ion source 18 to receive ribbon beam 12 from ion source 18. The central chamber 16 is provided with a processing chamber 26 for performing ion implantation processing of the substrate S by the strip beam 12. Further, the central chamber 16 is provided with an upstream buffer chamber 28 and a downstream buffer chamber 30 connected to the processing chamber 26. Further, in order to prevent the drawing from being unnecessarily complicated, the central chamber 16 is not shown in Fig. 2 .

The central chamber 16 is provided with a substrate moving mechanism for moving the substrate S along the substrate moving path A (see Fig. 6). The substrate moving path A is a linear path extending in a direction perpendicular to the longitudinal direction of the strip beam 12, which passes through the upstream buffer chamber 28, the processing chamber 26, and the downstream buffer chamber 30. The substrate moving path A passes through the ion beam region 14 of the processing chamber 26. The substrate moving mechanism is configured to continuously move the substrate S along the substrate moving path A. The substrate moving mechanism is capable of moving the substrate S at a substantially constant speed. The structure of the linear vacuum chamber will be described later in detail with reference to Fig. 6.

Processing chamber 26 is disposed adjacent to ion source 18. The processing chamber 26 receives the ribbon beam 12 from the ion source 18 (correctly the extraction electrode system 24). The processing chamber 26 therefore has an ion beam region 14 therein. When viewed from the ion beam region 14 of the processing chamber 26, the extraction electrode system 24 is exposed.

The ion implantation device 10 is provided with a control for controlling the ion implantation device 10 Department 32. In particular, the control unit 32 is provided to control the ion beam generation conditions of the ion source 18. The ion beam generation conditions include, for example, ion beam control conditions of the extraction electrode system 24 and/or plasma control conditions of the plasma source 22. The ion beam control conditions include the ion beam extraction conditions of the extraction electrode system 24. The ion beam extraction conditions include, for example, the extraction voltage of the extraction electrode system 24. The ion beam control conditions can also include plasma control conditions. Thereby, the control unit 32 is configured to control at least one of the plasma source 22 and the extraction electrode system 24. The control unit 32 may also be configured to control the entire ion implantation apparatus 10 including the ion source 18 and the substrate moving mechanism.

The ribbon beam 12 has beam characteristics determined by ion beam generation conditions. The beam characteristics include, for example, the beam current of the ribbon beam 12, the ion composition of the ribbon beam 12, and/or the cross-sectional uniformity of the ribbon beam 12. Since the processing chamber 26 is adjacent to the ion source 18, the ribbon beam 12 is directed from the extraction electrode system 24 directly to the ion beam region 14. Thus, the characteristics of the ribbon beam 12 have been determined at the stage of extraction by the extraction electrode system 24, and the beam characteristics are maintained from the beam delivery space of the extraction electrode system 24 to the processing chamber 26. Thus, the ion implantation characteristics (eg, implant dose, implant energy, and/or implant profile) obtained on substrate S are determined by the ion beam generation conditions of ion source 18.

Therefore, as will be described later, the control unit 32 controls the ion beam generation conditions (for example, changing the ion beam extraction conditions) under given implantation conditions (for example, implant dose) for the substrate S and a given substrate moving speed. The beam current of the ribbon beam 12 is adjusted. Further, in one embodiment, the control unit 32 controls the ion beam 12 by changing the plasma control conditions of the plasma source 22. The composition of the ions. For example, the ratio of monomer ions and dimeric ions of the ion species to be implanted onto the substrate S is controlled. In this way, the implanted dopant current can be controlled.

The ion implantation apparatus 10 is provided with a beam guide 34 that connects the ion source 18 to the processing chamber 26. Thus, the processing chamber 26 is adjacent to the ion source 18 via the beam guides 34. The beam guide 34 is a cylindrical member that surrounds the ribbon beam 12, which provides a vacuum environment for transporting the ribbon beam 12 between the ion source 18 and the processing chamber 26. The inner wall surface of the beam guide 34 is separated from the outer peripheral portion of the band beam 12 so as not to interfere with the band beam 12. An anti-adhesion plate (for example, a graphite pad) for preventing particles may be attached to the inner wall surface of the beam guide 34.

As shown in FIG. 2, the ion implantation apparatus 10 includes a high voltage insulator 48 that is mounted between the plasma chamber 20 and the beam guide 34. The high voltage insulator 48 insulates the beam guide 34 from the plasma chamber 20. The processing chamber 26 is therefore also insulated from the plasma chamber 20. The high voltage insulator 48 is disposed to surround the extraction electrode system 24.

As such, the ion implantation device 10 has a linear beam line. The linear beam line exists between the ion source 18 and the processing chamber 26 to deliver the ion beam 12 drawn by the extraction electrode system 24 directly to the processing chamber 26. The beamline is extremely short and does not have the beamline constituent elements that affect the beam characteristics (e.g., beam current) of the ion beam 12. For example, the ion implantation apparatus 10 differs from a general apparatus in that it does not have a mass spectrometer. As such, the ion beam 12 is directly irradiated onto the substrate S. The ion implantation apparatus 10 has a beam line of such a simple structure, and thus it is possible to reduce the manufacturing cost thereof.

The ion source 18 will be further described with reference to FIGS. 1 and 2. The plasma chamber 20 provides a space for holding and containing the generated plasma 21. The plasma chamber 20 has a magnet (not shown) for adsorbing the plasma 21 to or near the wall portion thereof. The plasma accommodating space has, for example, a rectangular parallelepiped shape, and a plasma source 22 is disposed on the upper side and an extraction electrode system 24 is disposed on the lower side.

As shown in Fig. 2, the plasma chamber 20 has a plurality of outlet openings 50 for taking out the plasma 21 to the outside. The outlet opening 50 is provided in association with the extraction electrode system 24. As such, the plasma source 22 is positioned opposite the extraction electrode system 24 and the outlet opening 50.

A plurality of outlet openings 50 are formed adjacent to each other, and each has an elongated shape extending in a direction perpendicular to the substrate moving path A. The plurality of outlet openings 50 are arranged at equal intervals in parallel with each other. The plasma chamber 20 may also be provided with a beam shutter (not shown) for opening and closing a part or all of the plurality of outlet openings 50. When the beam shutter is turned on, the ion beam 12 can be taken out from the plasma chamber 20. When the beam shutter is closed, the ion beam 12 can be physically cut off to reduce the amount of the ion beam.

Return to Figure 1. The plasma source 22 is provided with a gas supply source 36 for supplying a source gas to the plasma chamber 20. The source gas contains the type of ions that should be implanted into the substrate S. For example, when the ion species implanted into the substrate S is phosphorus (P), the source gas is, for example, PH ₃ diluted with H ₂ . When the ion species implanted into the substrate S is boron (B), the source gas is, for example, B ₂ H ₆ diluted with H ₂ . Moreover, the source gas may also be H ₂ to achieve hydrogen passivation of the substrate S. The source gas may also contain any diluent gas different from H ₂ , an auxiliary gas for improving the ignitability of the plasma, and/or other inert gas, as needed.

The gas supply source 36 is connected to the plasma chamber 20 via a gas pipe 38. The source gas is supplied to the plasma chamber 20 through the gas pipe 38. A gas adjustment portion (e.g., a mass flow controller) may be disposed on the gas supply source 36 and/or the gas piping 38 to adjust the concentration and/or flow rate of the source gas introduced into the plasma chamber 20.

The plasma source 22 is provided with a high frequency plasma excitation source, such as an RF antenna 40, for generating a plasma 21 from a source gas in the processing chamber 26. Further, the plasma source 22 includes an RF matching unit 42 and an RF power source 44 for supplying power to the RF antenna 40. The RF antenna 40 is disposed within the plasma chamber 20, and the RF matcher 42 and the RF power source 44 are disposed outside of the plasma chamber 20. The RF matcher 42 is mounted outside the plasma chamber 20. Thus, the ion source 18 is constructed as an RF plasma-excited ion source.

As shown in FIG. 2, the plasma source 22 includes a plurality of RF antennas 40 and a plurality of RF matchers 42. An RF matcher 42 is disposed on each of the RF antennas 40. A plurality of RF antennas 40 are arranged along the exit opening 50 of the plasma chamber 20. Thereby, the elongated plasma 21 can be generated in the plasma chamber 20 along the outlet opening 50. As such, the ion source 18 is a barrel ion source.

As shown in Fig. 1, the plasma source 22 is provided with a source box 46. The source box 46 houses a gas supply source 36 and an RF power source 44. For example, a voltage corresponding to the required implantation energy is applied to the plasma chamber 20 and the source tank 46 by a power supply device 70 (see FIG. 3) which will be described later. Therefore, a voltage corresponding to the required implantation energy can be applied to the outlet opening 50 of the plasma chamber 20.

The control unit 32 controls the plasma source 22 in accordance with the plasma control conditions. Thus The gas supply source 36 supplies the source gas to the plasma chamber 20, and supplies electric power from the RF power source 44 to the RF antenna 40. As a result, the plasma 21 containing the desired ion species is excited in the plasma chamber 20.

The plasma control conditions include one or a plurality of plasma control parameters for controlling the plasma 21. The plasma control parameters are, for example, the concentration of the source gas (e.g., hydrogen dilution rate), the flow rate of the source gas, the total RF power of the ion source 18, the RF power of each RF antenna 40, the position of each RF antenna 40, and the desired The applied energy corresponding to the implant energy is not limited to these. The plasma 21 can be controlled by adjusting or changing the plasma control parameters. By controlling the plasma 21, for example, the beam current of the ribbon beam 12 can be adjusted somewhat.

Alternatively, the ratio of the monomer ions to the dimeric ions in the plasma 21 can be controlled by adjusting the concentration, flow rate, and RF power of the source gas introduced into the plasma chamber 20. When the dopant is phosphorus, the ratio of the monomer ion PH _X ⁺ to the dimeric ion P ₂ H _X ⁺ can be controlled. Similarly, when the dopant is boron, the ratio of the monomer ion BH _X ⁺ to the dimeric ion B ₂ H _X ⁺ can be controlled. Therefore, the control unit 32 can control the implant dopant current and/or the implant distribution of the substrate S by changing the plasma control conditions.

Fig. 3 is a view showing the extraction electrode system 24 of the ion implantation apparatus 10 according to the embodiment of the present invention. The extraction electrode system 24 includes a plasma electrode 52 and an extraction acceleration electrode portion 54. The plurality of outlet openings 50 described above are formed on the plasma electrode 52. The plasma electrode 52 is a bottom plate that separates the inside of the plasma chamber 20 from the outside. The extraction accelerating electrode portion 54 includes an extraction electrode 56, a suppression electrode 58, and a ground electrode 60. Thereby, the extraction electrode system 24 is provided with four electrodes.

The four electrodes of the extraction electrode system 24, that is, the plasma electrode 52, the extraction electrode 56, the suppression electrode 58, and the ground electrode 60 are disposed in the order from the ion source 18 toward the processing chamber 26. The electrodes are respectively slit-shaped flat plates and are arranged in parallel to each other. The interval between the plasma electrode 52 and the extraction electrode 56 is narrower than the interval between the extraction electrode 56 and the suppression electrode 58. The interval between the extraction electrode 56 and the suppression electrode 58 is wider than the interval between the suppression electrode 58 and the ground electrode 60.

The extraction electrode system 24 has a plurality of slits corresponding to the plurality of outlet openings 50 of the plasma electrode 52. That is, the extraction electrode 56 has a plurality of second slits 62, the suppression electrode 58 has a plurality of third slits 64, and the ground electrode 60 has the same shape and arrangement as the plurality of outlet openings 50 of the plasma electrode 52. A plurality of fourth slits 66. Thereby, a plurality of elongated openings adjacent to each other are formed on the respective electrodes of the extraction accelerating electrode portion 54. The elongated openings are formed in a direction perpendicular to the substrate moving path A. The outlet opening 50 of the plasma electrode 52 can be referred to as the first slit of the extraction electrode system 24.

The first slit to the fourth slit give a slit path for a straight line of the ion beam drawn from the plasma chamber 20. The elongated ion beam 68 is drawn through each slit path. The ribbon beam 12 is formed by a plurality of elongated ion beams 68 corresponding to a plurality of slit paths. In this manner, a plurality of slit paths are provided along the substrate moving path A, whereby a wide strip beam 12 (i.e., a wide ion beam region 14) can be obtained. This slit structure contributes to a large area of the ribbon beam 12. The extraction electrode 24 is designed to be capable of extracting a ribbon beam having uniformity along the longitudinal direction of the ribbon beam 12 (at least across the width of the substrate S) 12.

The extraction electrode system 24 is provided with a power supply device 70 for applying a voltage to each electrode. The power supply device 70 includes an extraction power source 72 associated with the plasma electrode 52, an acceleration power source 74 associated with the extraction electrode 56, and a suppression power source 76 associated with the suppression electrode 58. These power sources are variable voltage DC power supplies and are controlled by the control unit 32.

The lead-out power source 72 is connected between the plasma electrode 52 and the extraction electrode 56 to apply the positive extraction voltage Vex to the plasma electrode 52. The accelerating power source 74 is connected between the extraction electrode 56 and the ground electrode 60 to apply a positive accelerating voltage to the extraction electrode 56. The suppression power source 76 is connected between the control electrode 58 and the ground electrode 60 to apply a negative suppression voltage to the suppression electrode 58. The ground electrode 60 is grounded.

The control unit 32 controls the extraction electrode system 24 in accordance with the ion beam extraction conditions. If the power supply unit 70 applies a voltage to the extraction electrode system 24 in accordance with the extraction conditions, the ribbon beam 12 is continuously drawn from the plasma chamber 20 through the extraction electrode system 24. The extracted ribbon beam 12 is incident directly into the processing chamber 26 by the beam guide 34.

Therefore, the ion composition of the ribbon beam 12 taken out by the extraction electrode system 24 is derived from the plasma 21. As described above, since the plasma 21 contains monomer ions and dimeric ions implanted into the dopant of the substrate S, the ribbon beam 12 also contains monomer ions and dimeric ions. The ribbon beam 12 is not incident on the processing chamber 26 via the mass spectrometer, thus allowing the ion beam region 14 to receive both monomer ions and dimeric ions.

The ion beam extraction conditions include one for controlling the extraction electrode system 24 Or multiple extraction control parameters. The extraction control parameters include, for example, the extraction voltage Vex, the suppression voltage, the shape of the outlet opening 50, the interval between the plasma electrode 52 and the extraction electrode 56, and the longitudinal distribution of the beam between the plasma electrode 52 and the extraction electrode 56. , but not limited to these. The ribbon beam 12 can be controlled by adjusting or changing the extraction control parameters.

For example, the control unit 32 can control the extracted beam current by constantly changing the extraction voltage Vex and/or the suppression voltage by keeping the implantation energy constant. Alternatively, the control unit 32 can also control the outgoing beam current by adjusting the shape of the outlet opening 50. Therefore, the plasma electrode 52 can also have a variable outlet opening.

The control unit 32 can control the outgoing beam current by changing the position and/or shape of at least one of the electrodes of the extraction electrode system 24. Therefore, for example, a driver for adjusting the interval between the plasma electrode 52 and the extraction electrode 56 may be provided on the plasma electrode 52 and/or the extraction electrode 56. In order to adjust the longitudinal distribution of the beam between the plasma electrode 52 and the extraction electrode 56, a driver for moving and/or deforming the plasma electrode 52 and/or the extraction electrode 56 may be provided.

Fig. 4 is a plan view showing a beam measuring system 78 of the ion implantation apparatus 10 according to the embodiment of the present invention. The beam measuring system 78 will be described with reference to Figs. 1 and 4 .

Further, unlike FIG. 1, the positional relationship between the substrate S and the strip beam 12 shown in Fig. 4 is a state before ion implantation. The substrate S moves toward the strip beam 12 at the substrate scanning speed Vs. The substrate S is not overlapped with the ribbon beam 12, and ion implantation has not yet begun. Here, the substrate S may be a plurality of bases The board and the tray on which the trays are placed. Fig. 4 shows a tray in which matrix-shaped substrates of 7 rows and 5 columns can be arranged. The strip beam 12 is simultaneously irradiated to the five columns of substrates.

As shown in FIG. 1, the beam measurement system 78 is housed in the measurement chamber 80. The measurement chamber 80 is below the processing chamber 26. That is, the measurement chamber 80 and the ion source 18 are on opposite sides of each other with respect to the processing chamber 26. The measurement chamber 80 is configured to receive the ribbon beam 12 from the ion source 18 through the processing chamber 26. Thereby, the beam measuring system 78 is on the downstream side of the beam path than the substrate S.

The beam measuring system 78 is configured to measure the characteristics of the ribbon beam 12. The beam measuring system 78 includes a scanning Faraday 82, a fixed Faraday 84, and a mass spectrometer 86. The scanning Faraday 82, the fixed Faraday 84, and the mass spectrometer 86 are arranged in the order of the transport along the transport direction of the ribbon bundle 12. Thereby the mass spectrometer 86 is located at the end of the beam path.

The scanning Faraday 82, the fixed Faraday 84, and the mass spectrometer 86 can output the measurement results to the control unit 32, respectively. The scanning Faraday 82 and/or the fixed Faraday 84 are configured to measure the implant beam current before and/or implantation of the substrate S.

A high-speed moving profile monitor that scans the Faraday 82 system in the longitudinal direction of the ribbon beam 12. Scanning a Faraday 82 series movable beam current meter, such as a Faraday cup. The scanning Faraday 82 is set to measure the uniformity of the beam current in the longitudinal direction of the ribbon beam 12. As shown in Fig. 4, the scanning Faraday 82 scans the beam intensity of the band beam 12 while scanning the movable range C including the width of the strip beam 12 in the longitudinal direction. The ribbon beam can be measured by measuring at a plurality of positions in the movable range C. The uniformity of the beam current of 12.

The movable range C of the scanning Faraday 82 reaches the end portion of the strip beam 12 in the longitudinal direction. The width of the strip beam 12 in the longitudinal direction is wider than that of the substrate S, so that even when the substrate S enters the strip beam 12, the end portion of the strip beam 12 passes through the side of the substrate S. Therefore, even when the substrate S enters the strip beam 12, the scanning Faraday 82 can measure the beam current of the strip beam 12 (at the end of the beam). Thereby, scanning the Faraday 82 can measure the beam current not only before and after implantation but also at the time of implantation.

The control unit 32 can control the uniformity of the beam current in the longitudinal direction of the strip beam 12 by using the measurement result of the beam current uniformity. For example, to improve the uniformity of the beam current, the control portion 32 can adjust the input power of each of the plurality of plasma excitation sources (eg, the RF antenna 40). Alternatively, in order to improve the uniformity of the beam current, the plasma electrode 52 and/or the extraction electrode 56 may be moved and/or deformed to adjust the longitudinal distribution of the beam between the plasma electrode 52 and the extraction electrode 56. .

Further, the measuring device for measuring the uniformity of the beam current may be of a movable type. For example, the uniformity of the beam current can be measured by a plurality of measuring devices arranged in the longitudinal direction of the beam. The beam current meter can include a fixed Faraday 84 as described below.

A fixed Faraday 84 series fixed beam current meter, such as a Faraday cup. Fixed Faraday 84 is set to determine the average beam intensity. The fixed Faraday 84 is provided with, for example, three, two of which are disposed at both ends of the ribbon bundle 12, and the remaining one is disposed at the center of the ribbon bundle 12. The fixed Faraday 84 at both ends is configured to be capable even when the substrate S enters the ribbon beam 12 The beam current of the ribbon beam 12 is determined. Thereby, the fixed Faraday 84 is also capable of measuring the beam current not only before and after implantation but also at the time of implantation. The central fixed Faraday 84 is used, for example, in beam current measurement prior to implantation. Therefore, the control unit 32 can use the average value of the plurality of (for example, three) fixed Faraday 84 measurement values as the beam current before implantation.

The mass spectrometer 86 measures the ion current according to the type of ions. The ribbon beam 12 is composed of a source gas containing at least dopant ions and hydrogen ions (H _X ⁺ ). The dopant ions contain monomer ions and dimeric ions. Thus, mass spectrometer 86 is capable of measuring the ion currents of monomer ions, dimeric ions, hydrogen ions, and (when present) other ions, respectively. The ratio of the dopant ion current to the beam current of the ribbon beam 12 (i.e., the dopant ratio Fd) can be measured by the mass spectrometer 86. The mass spectrometer 86 is capable of determining the ion composition of the ribbon beam 12.

The ribbon beam 12 selectively illuminates the substrate S with the mass spectrometer 86. That is, when the substrate S is irradiated with the ribbon beam 12, the mass spectrometer 86 is disposed at a position where the ribbon beam 12 cannot be received. Therefore, in the continuous implantation process for a plurality of substrates, the mass spectrometer 86 processes the gap between a certain substrate and the next substrate, and performs mass spectrometry measurement of the beam.

Since the ion implantation apparatus 10 is configured in a linear shape, a plurality of substrates sequentially pass through the strip beam 12 in succession. It is preferable that the processing time of each of the plurality of substrates is constant. Therefore, it is preferable to move a plurality of substrates at a constant substrate scanning speed Vs corresponding to the constant processing time. However, there are cases where ion implantation conditions vary depending on the substrate.

Therefore, the control unit 32 has the required implantation dose D for the substrate S and At the substrate scanning speed Vs, the extraction voltage Vex is controlled to adjust the beam current J of the ribbon beam 12. The beam current J can be expressed as J(Vex) as a function of the extraction voltage Vex. The implant dose D and the substrate scan speed Vs can be correlated with the beam current J (Vex). An example of the association of this species is shown in the following formula. Among them, qe is an electron charge and an α system proportional constant. The proportionality constant α is determined, for example, by the beam measuring system 78.

As described above, the state of the plasma 21 is determined by the concentration, flow rate, and RF power of the source gas. When the plasma control parameters are kept constant, the plasma state remains constant and the dopant ratio Fd becomes constant. The implantation dose D, the electron charge qe, and the proportionality constant α are constants, so the above formula gives the relationship between the substrate scanning speed Vs and the beam current J (Vex).

Therefore, the control unit 32 can set the beam current J (Vex) and the extraction voltage Vex before the implantation in accordance with the conditions given. That is, the control unit 32 can control the extraction voltage Vex in such a manner as to give the required implantation dose D and maintain a constant substrate scanning speed Vs. Before the implantation of the substrate S, the control unit 32 derives the beam current J from the right side of the above relational expression, and sets the extraction power source 72 to the extraction voltage Vex corresponding to the current value. As a result, the ribbon beam 12 having the beam current J (Vex) corresponding to the extraction voltage Vex is irradiated onto the substrate S.

The control unit 32 can control the suppression voltage instead of controlling the extraction voltage Vex, or control the suppression voltage together with the extraction voltage Vex. Such as Thus, the implantation dose D and the substrate scanning speed Vs can also be achieved. At this time, the control section 32 can control the ion beam extraction conditions to obtain the implantation dose D, and maintain a predetermined implantation distribution.

In one embodiment, the control unit 32 can perform feedback control of the beam current J. The control unit 32 can also control the beam current J before and/or at the time of implantation based on the beam current measurement results before and/or at the time of implantation. For example, the control unit 32 may control the ion beam extraction conditions (for example, the extraction voltage Vex) so that the measured beam current coincides with the target beam current. The target beam current is given, for example, by the right side of the above relationship. Further, in an embodiment, the control unit 32 may control the substrate scanning speed Vs at the beam current and the implant dose D measured before and/or at the time of implantation.

Further, in one embodiment, the control unit 32 can control the ion source 18 by combining the change of the plasma control condition and the change of the ion beam extraction condition. At this point, the plasma source 22 is operated by the changed plasma control conditions and the extraction electrode system 24 is operated by the altered ion beam extraction conditions. The control unit 32 can perform optimal control using such a composite control. For example, the control unit 32 can also perform composite control in such a manner that the extracted beam current and/or the dopant implanted beam current become maximum. Alternatively, the control unit 32 can also perform composite control in such a manner as to obtain optimum beam uniformity.

Further, in one embodiment, the control unit 32 can control the dopant ratio Fd by changing the plasma control conditions of the plasma source 22. The implant distribution can be improved by controlling the dopant ratio Fd.

Fig. 5 is a view showing an implant distribution obtained by the ion implantation apparatus 10 according to an embodiment of the present invention. In Fig. 5, the vertical axis represents the dopant concentration and the horizontal axis represents the implantation depth. As shown, the ion implantation apparatus 10 is capable of obtaining an implant distribution having a significant peak on the approximate surface of the substrate S and a monotonously decreasing dopant as the concentration is increased. For solar cells, this distribution is preferred in terms of performance. Such an improvement in distribution can be considered to be due to the dimerization of the ribbon beam 12 containing a dopant. The comparative example shown in Fig. 5 is a distribution obtained when only a single ion is implanted in a conventional ion implantation apparatus. The comparative example has a peak at a deeper position than the embodiment.

Fig. 6 is a plan view showing a linear vacuum chamber system 100 used in the ion implantation apparatus 10 of one embodiment of the present invention. The vacuum chamber 100 is provided with a central chamber 16 having a processing chamber 26, an upstream buffer chamber 28, and a downstream buffer chamber 30. A ribbon beam 12 is supplied to the processing chamber 26.

The vacuum chamber system 100 is provided with a substrate transfer system 102 for moving the substrate S along the substrate movement path A. The substrate transfer system 102 unidirectionally transports the substrate S along the substrate movement path A, whereby the implantation process of one scan can be performed. The substrate handling system 102 includes a substrate moving mechanism for the central chamber 16.

In the vacuum chamber system 100, a first transition chamber 104 is provided upstream of the central chamber 16, and a second transition chamber 106 is provided downstream of the central chamber 16. The first transition chamber 104 is attached to the upstream buffer chamber 28 of the central chamber 16 via the first transition valve 108. The second transition chamber 106 is via the second The transition valve 110 is mounted to the downstream buffer chamber 30 of the central chamber 16.

The vacuum chamber system 100 includes a front process processing unit 111 and a post process processing unit 112 as necessary. The pre-process processing unit 111 performs a pre-process of ion implantation processing on the substrate S performed in the central chamber 16. The post-process processing unit 112 performs a post-process of the ion implantation process. The front process processing unit 111 is attached to the first transition chamber 104 via the third transition valve 114. The post-process processing unit 112 is attached to the second transition chamber 106 via the fourth transition valve 116.

Therefore, the substrate transfer system 102 is configured to sequentially transport the substrate S to the forward processing unit 111, the first transition chamber 104, the central chamber 16, the second transition chamber 106, and the post-processing unit 112. As shown in the figure, the substrate transfer system 102 continuously transports a plurality of substrates S, and can perform ion implantation processing on a straight line. The central chamber 16 is configured to accommodate two substrates S at the same time. The first and sixth figures show the substrate S1 during the ion implantation process and the substrate S2 to be processed.

The first transition chamber 104 and the second transition chamber 106 are provided for transporting the substrate S between the atmosphere and the high vacuum environment of the central chamber 16. When the current process processing unit 111 and/or the post-process processing unit 112 are in a high vacuum environment of the same level as the central chamber 16, there is a case where the first transition chamber 104 and/or the second transition chamber 106 are not required.

The transition chambers 104, 106 may be configured to perform evacuation and low vacuum drawing operations when the substrate S is transported between the central chamber 16. In this way, it is possible to prevent the source gas from leaking to the outside. This type of transition is preferred when using a source gas that is toxic.

For ion implantation in the central chamber 16, it can be used Mask M. Therefore, the front process processing unit 111 can be configured such that the mask M is mounted on the substrate S (for example, a solar battery cell tray, which is associated with the figure, and the same applies hereinafter). At this time, ion implantation of the substrate S is performed in the processing chamber 26 in a state in which the mask M is mounted. The post-process processing unit 112 may be configured to remove the mask M from the processed substrate S. For the attachment and detachment of such a mask M, a mask mounting and detaching unit tray transport mechanism 118 may be provided outside the vacuum chamber system 100. The transport mechanism 118 may be configured to be transported in order to reattach the removed mask M.

Further, a conveyance control device 120 for controlling the vacuum chamber system 100 and the substrate conveyance system 102 is provided. The conveyance control device 120 may be integrally formed with the control unit 32 for the ion implantation device 10 or may be provided separately from the control unit 32.

The conveyance control device 120 can set the substrate scanning speed Vs in the substrate conveyance system 102 to be constant. The conveyance control device 120 can set the substrate scanning speed Vs according to the ion beam generation conditions and/or the ion implantation conditions for the substrate S.

Alternatively, the conveyance control device 120 may adjust the substrate scanning speed Vs as needed. For example, the conveyance control device 120 can adjust the substrate scanning speed Vs while the substrate S passes through the ion beam region 14. Alternatively, the conveyance control device 120 may change the substrate scanning speed Vs while the substrate S passes through the ion beam region 14 and the substrate S leaves the ion beam region 14.

The substrate transfer system 102 may be provided with a cooling device for the substrate S to be transported. The cooling device can be configured to make the coolant work on the substrate Circulate on the table and / or on the tray. In order to perform good thermal contact between the substrate and the mounting surface thereof, the mounting surface may have a surface roughness of, for example, Ra of about 30 μm. The mounting surface may be roughened by, for example, thermal spraying of Si.

The operation of the ion implantation apparatus 10 will be described. An example in which the substrate S is a solar battery cell tray S in which a plurality of solar battery cells are placed in a matrix shape will be described. First, the ion beam generation conditions including the plasma control conditions and the ion beam extraction conditions are set by the required ion implantation conditions and the scanning speed Vs of the linear vacuum chamber 100.

The ion source 18 is operated according to ion beam generation conditions. The plasma source 22 is operated according to the plasma control conditions, and the plasma 21 containing the desired ion species is excited in the plasma chamber 20. The extraction electrode system 24 is operated in accordance with the ion beam extraction conditions, and the ribbon beam 12 is continuously withdrawn from the plasma chamber 20 through the extraction electrode system 24. The extracted ribbon beam 12 is incident directly into the processing chamber 26. As such, the elongated ribbon beam 12 that satisfies the width of the solar cell tray S is always illuminated into the processing chamber 26.

The solar battery cell tray S is transported from the front process to the first transition chamber 104. A mask M is mounted on the solar battery cell tray S as needed. The third transition valve 114 is opened, and the solar battery cell tray S is inserted into the first transition chamber 104. The third transition valve 114 is closed, and the first transition chamber 104 is roughly pumped by a rough pump (not shown). Next, the first transition valve 108 is opened, and the solar battery cell tray S is transported into the upstream buffer chamber 28. The first transition valve 108 is closed, and the solar battery cell tray S is housed in the upstream buffer chamber 28.

The solar battery cell tray S passes through the lower portion of the ribbon bundle 12 at the scanning speed Vs by the unit tray scanning mechanism 102 in the central chamber 16 and is transported to the downstream buffer chamber 30. When the solar battery cell tray S moves in the processing chamber 26, the ribbon beam 12 is irradiated onto the solar battery cell tray S for ion implantation. Based on the measurement results at the time of ion implantation, the ion beam generation conditions are changed as needed. Thereby, the desired implantation is performed at the scanning speed Vs.

The solar battery cell tray S1 at the time of ion implantation processing and the solar battery cell tray S2 to be processed are shown in Figs. 1 and 6 . Both the preceding unit tray S1 and the subsequent unit tray S2 are transported at the same scanning speed Vs. The subsequent unit tray S2 follows the preceding unit tray S1 at regular intervals. If the unit tray S1 completely passes through the strip beam 12, the primary ion implantation process for the unit tray S1 ends. Immediately after the next unit tray S2 enters the ribbon beam 12, ion implantation of the unit tray S2 is started.

After the rough drawing of the second transition chamber 106 is performed, the second transition valve 110 is opened, and the solar battery cell tray S that has been implanted is transported to the second transition chamber 106. The second transition valve 110 is closed, and the second transition chamber 106 is exhausted to become atmospheric pressure. Thereafter, the fourth transition valve 116 is opened, and the solar battery cell tray S is transferred to the post-process processing unit 112. When the mask M is attached, the mask M is removed from the solar battery cell tray S. The mask M is returned to the front process processing unit 111 by the cover attachment and detachment unit tray transport mechanism 118.

Figure 7 is a view showing an ion implantation method according to an embodiment of the present invention. flow chart. This ion implantation method is performed by the control unit 32 and/or the conveyance control device 120. As shown in Fig. 7, the method includes an ion beam generating step (S10) and an ion implantation step (S20).

The ion beam generating step (S10) is provided with: setting and/or controlling ion beam generation conditions of the ion source 18; generating a plasma 21 in the plasma chamber 20 of the ion source 18; and extracting the electrode system 24 through the ion source 18. The ion beam 12 is extracted. The ion beam 12 has characteristics (e.g., beam current) that are determined by ion beam generation conditions.

The ion implantation step (S20) is provided with: receiving the ion beam 12 from the ion source 18 into the processing chamber 26; and moving the substrate S to pass through the ion beam region 14 of the processing chamber 26. During the passage of the substrate S through the ion beam region 14, the ion beam 12 is directed from the extraction electrode system 24 directly to the ion beam region 14. The beam characteristics determined by the stage of extraction by the extraction electrode system 24 are maintained in the ion beam region 14.

As described above, according to the present embodiment, the ion implantation apparatus 10 determines the beam characteristics of the large-area and high-current ribbon beam 12 in the ion source 18 so as to conform to the required implantation conditions and linear substrate scanning. The strip beam 12 is irradiated onto the substrate S. As such, the ion implantation apparatus 10 can achieve higher productivity at low cost.

Further, according to the present embodiment, in addition to the above-described representative effects, various effects described below can be obtained.

The ion source is capable of generating a barrel-type ion source of high-density plasma using an induced discharge generated by RF. Along with or in addition to this, the beam take-out system is provided by a lead-out slit system having a large-area and wide-width beam take-off opening, etc. Composition. Therefore, a ribbon beam with a higher implant dopant current can be extracted. In addition, the large-area ribbon beam is directly implanted onto the substrate without mass spectrometry. Therefore, higher productivity can be achieved.

Moreover, the high current ribbon beam is combined into a linear production line. In the implantation process, a large area of the implant is always illuminated with a beam. The arrangement of the plurality of battery substrates is continuously unidirectionally moved under the beam at a constant speed. This is done to implant the desired doping amount. Higher productivity is achieved by continuous processing of a plurality of substrates. Moreover, the substrates are unidirectionally moved in a straight line, and therefore are kept in a vacuum and transported to the next process. Shorter handling times between processes also contribute to increased productivity.

In a linear production line, it is important to process the substrate at a constant speed. Therefore, after the substrate is processed at a certain dose and the substrate of the different dosage method is continuously processed, it is preferable to appropriately adjust the implanted dopant current before starting the processing of the substrate. According to this embodiment, the extraction current is changed by changing the extraction voltage, so that the implanted dopant current can be changed without changing the implantation energy. Since the extraction voltage can be quickly changed, the implanted dopant current can be quickly adjusted. Therefore, it is possible to continuously process the substrates of various processes while maintaining the processing speed of the production line at a high speed. In this way, smooth linear substrate processing can be realized without disturbing the processing speed of the production line.

In the conventional impurity introduction device for a solar battery cell, a hot cathode type ion source used in an ion implantation apparatus for a semiconductor may be used. At this time, the beam is taken out from a single hole, so that sufficient beam extraction power cannot be obtained. Flow, and thus a large implant beam current cannot be obtained. Since the implantation depth required for the solar cell unit is shallow (that is, because the implantation energy is low), the extraction current at the extraction voltage corresponding to the implantation energy also becomes lower, so that the implantation beam current is also reduce. If mass spectrometry is performed, the beam current will decrease more. However, according to the present embodiment, by providing a long lead-out opening by using a bucket source, the amount of the extracted beam current can be increased. Thereby, the current of the implanted beam can be increased, the implantation time can be shortened, and high productivity can be achieved.

The RF plasma-excited ion source can operate at a lower temperature than the hot cathode type ion source, so that the temperature of the plasma generation chamber can be kept low. Therefore, it is possible to use PH ₃ or B ₂ H ₆ which is easily decomposed at a high temperature (the gases are decomposed into H and dopant atoms at about 300 ° C) as a source gas. The ratio of dimerized ions to monomer ions can be freely changed by adjusting the plasma control conditions. It is preferred to control monomer ions such as PH _X ⁺ or BH _X ⁺ to generate a plasma mainly containing dimeric ions such as P ₂ H _X ⁺ or B ₂ H _X ⁺ . In this way, the current of the implant implant beam can be greatly increased with respect to the actual implanted current, so that the implantation time can be shortened and high productivity can be achieved.

Since the conventional semiconductor implant device has a mass spectrometer and has a long beam line, the loss in the beam transport system is large. Therefore, the implant beam current is reduced. However, according to the present embodiment, PH ₃ and B ₂ H ₆ diluted with H ₂ are used as the dopant gas, and the extraction beam can be implanted in a state in which H _X ⁺ is still contained without performing mass spectrometry. The length of the beam conveyor system is reduced to about 1/10. This can greatly increase the current of the implanted beam, shorten the implantation time, and achieve high productivity.

A conventional device can only process two columns of substrates at the same time. However, according to the present embodiment, since the elongate ribbon beam is taken out, the solar cell substrates of four or more rows can be arranged side by side, and the ribbon beam can be simultaneously irradiated and transported and implanted at a constant speed. Thereby, productivity can be improved more than twice as much as the conventional one.

Unlike the conventional stand-alone type device, according to this embodiment, a buffer chamber is provided before and after the implantation processing chamber. In addition, a transition chamber is provided as needed. In this way, it is possible to carry out the unidirectional transportation and implantation at a constant speed at the time of implantation, thereby realizing a linear device.

Ion implantation can be applied at a production cost that is allowed in the manufacture of a solar cell substrate. The existing methods, that is, for example, thermal diffusion of phosphorus for pn junction or selective emitter fabrication or thermal diffusion of boron in BSF, can be substituted for ion implantation. By ion implantation, the impurity amount and the diffusion depth can be accurately controlled, and thus the performance (for example, conversion efficiency) of the solar cell can be improved.

In terms of performance, the implantation distribution of impurities such as phosphorus or boron in the solar cell unit monotonously decreases in the depth direction to be preferable. When there is a peak in the depth direction, the concentration of the impurity is high at the depth position, and thus becomes a moving barrier of electrons. Thereby, the rotation efficiency of the solar cell unit is lowered. In order to improve the distribution with peaks into a monotonically decreasing distribution, it is necessary to perform a plurality of implantation processes with different implantation energies in the existing methods. When only monomer ions are implanted by mass spectrometry, as shown in Fig. 5, it is easy to have a peak distribution. However, according to this embodiment, the dimeric ions can be implanted into the base. On the board. Thereby, a monotonically decreasing implant distribution can be obtained by one implant scan. Therefore, the conversion efficiency of the unit can be improved, and productivity can also be improved.

As the source gas, PH ₃ and B ₂ H ₆ diluted with H _{2 are} used, whereby the implanted beam contains a large amount of H _X ⁺ , which are simultaneously implanted with the desired ion species. The hydrogen implantation has a hydrogen purification effect on most of the substrate and the membrane interface.

Hereinabove, the present invention has been described based on the embodiments. The present invention is not limited to the above-described embodiments, and various modifications can be made, and various modifications can be made, and such modifications are also within the scope of the present invention, which can be understood by those skilled in the art.

In the above embodiment, an RF plasma-excited elongated ion source having one or a plurality of RF antennas is used, but the invention is not limited thereto. In one embodiment, ion source 18 can be an ECR plasma-excited ion source having an elongated ECR plasma chamber. In one embodiment, the ion source 18 may be an elongated filament direct current discharge type or a side-heating filament cathode type ion source having one or a plurality of heated cathodes.

In the above embodiment, the substrate S is transported unidirectionally and the ion implantation process is performed once by one scan, but the present invention is not limited thereto. In one embodiment, the substrate S can be reciprocated in the processing chamber 26 or the central chamber 16 by scanning the strip 12 a plurality of times. In this way, a high dose implantation process can be performed.

In one embodiment, an ion implantation device can be used for obliquely implanting Ar ions onto a substrate (eg, an LCD substrate). At this time, for oblique implantation, the ion source is set to have an angle with respect to the substrate. In this way, a friction effect can be imparted to the substrate. Alternatively, in one embodiment, the ion implantation apparatus can be used as an implant device for CuSiN film production based on simultaneous high dose implantation of Si ⁺ and N ⁺ for improving the reliability of Cu wiring of a semiconductor element. Alternatively, in one embodiment, the ion implantation apparatus can also be used as an implant device for manufacturing touch panels, LEDs, and the like.

Hereinafter, several modes of the present invention will be exemplified.

An ion implantation apparatus according to an embodiment, comprising: an ion source; a plasma chamber; a plasma source for generating plasma in the plasma chamber; and an elongated beam for extracting from the plasma chamber a lead-out electrode system of a cross-section ion beam; a processing chamber disposed adjacent to the ion source and receiving the ion beam from the extraction electrode system, and having a substrate movement for moving the substrate along a substrate movement path passing through the ion beam irradiation region And a control unit configured to control ion beam generation conditions of the ion source, wherein the ion beam has a beam current determined by the ion beam generation condition, and the ion beam maintains the beam current from the extraction electrode system directly The substrate is irradiated onto the substrate in which the ion beam irradiation region is moved.

The foregoing ion beam generation conditions may include the extraction conditions of the aforementioned extraction electrode system and/or the plasma control conditions of the aforementioned plasma source. The aforementioned ion beam generation conditions may also include the extraction voltage of the aforementioned extraction electrode system.

The control unit may adjust the beam current to adjust the beam current at a given implant dose to the substrate and a given substrate moving speed. The substrate moving mechanism moves the substrate at a substantially constant speed move.

The control unit may control the ion composition of the ion beam by changing the plasma control condition of the plasma source.

The plasma source may include: a gas supply source for supplying a source gas containing PH ₃ , B ₂ H ₆ or H ₂ to the plasma chamber; and a high-frequency plasma excitation source for generating from the source gas Plasma.

The plasma chamber may have a plurality of elongated outlet openings adjacent to each other, and each of the elongated outlet openings may be formed in a direction perpendicular to the aforementioned moving path. The extraction electrode system can have a plurality of slits corresponding to the plurality of elongated outlet openings, and each slit can be configured to extract an ion beam having the elongated beam profile. The width of the aforementioned ion beam irradiation region in the direction of the aforementioned moving path may be wider than the width of the aforementioned direction of the elongated beam section.

The plasma source may be configured to generate a plasma containing monomer ions and dimeric ions of an ion species to be implanted into the substrate in the plasma chamber. The extraction electrode system may be configured to extract an ion beam containing monomer ions and dimeric ions from the plasma chamber. The aforementioned ion beam irradiation region can be allowed to receive both of the monomer ions and the dimeric ions.

An embodiment of an ion implantation method or ion implantation apparatus associated with a continuous elongated ribbon beam ion implantation apparatus. The apparatus is configured to generate elongated plasma in the elongated plasma chamber of the ion source. The apparatus is configured to extract an elongated and uniform ribbon-shaped ion beam from the source opening by the beam extraction electrode system. The apparatus is configured to illuminate the extracted ribbon ion beam into a continuously moving substrate or substrate group. The method or the device is modified by Either or both of the plasma control conditions of the sub-source and the ion beam control conditions of the beam extraction electrode system can control the beam current and/or dopant implantation profile of the dopant implant beam. The method or the apparatus can also control the beam current and/or doping of the dopant implant beam by changing the plasma control conditions and/or the ion beam control conditions of the ion source and the beam extraction electrode system. Agent implant distribution.

In one embodiment, the beam current that controls the dopant implant beam can be achieved by varying the ion beam control conditions of the ion source. In one embodiment, the dopant implantation profile can also be controlled by varying the plasma control conditions of the ion source. In an embodiment, the beam current and the dopant implantation distribution of the dopant implant beam can be simultaneously controlled by simultaneously changing the beam control conditions and the plasma control conditions of the ion source. In one embodiment, the plasma generation conditions can be changed without changing the plasma generation control conditions (monomer, dimerization ratio, and the like) of the ion source.

10‧‧‧Ion implant device

12‧‧‧ Banded bundle

14‧‧‧Ion beam irradiation area

16‧‧‧Central Chamber

18‧‧‧Ion source

20‧‧‧Plastic chamber

21‧‧‧ Plasma

22‧‧‧ Plasma source

24‧‧‧Extracting electrode system

26‧‧‧Processing chamber

28‧‧‧Upstream buffer chamber

30‧‧‧ downstream buffer chamber

32‧‧‧Control Department

34‧‧‧Ball guides

36‧‧‧ gas supply

38‧‧‧ gas piping

40‧‧‧RF antenna

42‧‧‧RF matcher

44‧‧‧RF power supply

46‧‧‧Source box

78‧‧·beam measurement system

80‧‧‧Measurement chamber

82‧‧‧ Scanning Faraday

84‧‧‧Fixed Faraday

86‧‧‧Mass Spectrometer

A‧‧‧ substrate moving path

S(S1)‧‧‧substrate (unit tray)

S(S2)‧‧‧substrate (unit tray)

Claims (12)

An ion implantation apparatus comprising: an ion source, comprising: a plasma chamber, a plasma source for generating plasma in the plasma chamber, and a light beam profile for extracting from the plasma chamber An extraction electrode system of the ion beam; the processing chamber is disposed adjacent to the ion source, and receives the ion beam from the extraction electrode system, and has a substrate moving mechanism for moving the substrate along a substrate movement path passing through the ion beam irradiation region And a control unit for controlling ion beam generation conditions of the ion source; the ion beam having a beam current determined by the ion beam generation condition; and the ion beam maintaining the radiation from the extraction electrode system The beam current is directly irradiated onto the substrate moving in the aforementioned ion beam irradiation region. The ion implantation apparatus of claim 1, wherein the ion beam generation condition includes an extraction condition of the extraction electrode system and/or a plasma control condition of the plasma source. The ion implantation apparatus of claim 1 or 2, wherein the ion beam generation condition comprises an extraction voltage of the extraction electrode system. The ion implantation apparatus of claim 1 or 2, wherein the control unit controls the ion beam generation condition to adjust the beam current at a given implantation dose to the substrate and a given substrate movement speed. . An ion implantation apparatus according to claim 1 or 2, wherein The aforementioned substrate moving mechanism moves the substrate at a substantially constant speed. The ion implantation apparatus of claim 1 or 2, wherein the control unit controls the ion composition of the ion beam by changing a plasma control condition of the plasma source. The ion implantation apparatus of claim 1 or 2, wherein the plasma source comprises: a gas supply source for supplying a source gas containing PH ₃ , B ₂ H ₆ or H ₂ to the plasma chamber; A high frequency plasma excitation source for generating a plasma from the aforementioned source gas. The ion implantation apparatus of claim 1 or 2, wherein the plasma chamber has a plurality of elongated outlet openings adjacent to each other, each elongated outlet opening being formed in a direction perpendicular to the moving path; the aforementioned extraction electrode system Having a plurality of slits corresponding to the plurality of elongated outlet openings, each slit being disposed to extract an ion beam having the elongated beam profile; and a width of the ion beam irradiation region in a direction along the moving path , wider than the width of the aforementioned elongated beam profile in the aforementioned direction. The ion implantation apparatus of claim 1 or 2, wherein the plasma source is configured to generate a plasma containing a monomer ion and a dimer ion of an ion species to be implanted on the substrate in the plasma chamber, the aforementioned extraction The electrode system is configured to extract an ion beam containing a monomer ion and a dimer ion from the plasma chamber, and the ion beam irradiation region is allowed to receive both the monomer ion and the dimer ion. An ion implantation method having: a process for controlling ion beam generation conditions of an ion source; a process for extracting an ion beam by an extraction electrode system of the ion source; a process of receiving the ion beam from the ion source to a processing chamber; and moving the substrate to pass through the processing chamber The ion beam irradiation region process; the ion beam has a beam current determined by the ion beam generation condition; and the ion beam maintains the beam current from the extraction electrode system and directly irradiates the ion beam The illuminated area moves on the substrate. An ion implantation apparatus comprising: an ion source having an extraction electrode system for extracting an ion beam; and a processing chamber for receiving the ion beam from the ion source, wherein the substrate is irradiated with an ion beam; the ion The beam has characteristics determined by ion beam generation conditions of the foregoing ion source, and during the passage of the substrate through the ion beam irradiation region, the foregoing characteristics are maintained from the extraction electrode system to the ion beam irradiation region, and direct irradiation to the foregoing ion beam irradiation The area is moving on the substrate. An ion implantation method comprising: a process of extracting an ion beam by an extraction electrode system of an ion source; a process of receiving the ion beam from the ion source to a processing chamber; and an ion beam irradiation region for passing the substrate through the processing chamber Process; the ion beam has characteristics determined by ion beam generation conditions of the ion source, and during the passage of the substrate through the ion beam irradiation region, The foregoing extraction electrode system and the aforementioned ion beam irradiation region maintain the aforementioned characteristics, and are directly irradiated onto the substrate in which the ion beam irradiation region is moved.