JP2014099284A - Ion implantation device and ion implantation method - Google Patents

Abstract

An ion implantation apparatus and an ion implantation method useful for improving productivity are provided.
An ion implantation apparatus includes an ion source including an extraction electrode system for extracting a ribbon beam, and a process chamber receiving a ribbon beam from the ion source. The process chamber 26 is configured to pass the ion beam irradiation region 14 through the substrate S. The ribbon beam 12 has characteristics that are determined according to the ion beam generation conditions of the ion source 18. The ribbon beam 12 retains beam characteristics from the extraction electrode system 24 to the ion beam irradiation region 14 while the substrate S passes through the ion beam irradiation region 14, so that the ion beam irradiation region 14 is directly applied to the moving substrate S. Irradiated.
[Selection] Figure 1

Description

  The present invention relates to ion implantation, and more particularly to an ion implantation apparatus and an ion implantation method.

  Beam line ion implantation apparatuses for manufacturing solar cells are known (see, for example, Patent Documents 1 and 2). In this apparatus, an ion beam extracted from an ion source is conveyed to an end station via a beam line having a mass analyzer, a resolving aperture, and an angle correction magnet. Undesired ionic species are blocked by the masking electrode without passing through the resolving aperture.

Special table 2011-513997 gazette US Patent Application Publication No. 2010/0197126

  In principle, there is a process to which ion implantation is not applied for economic reasons even if it is a process to which ion implantation can be applied. Due to the relatively high cost of existing ion implanters, such processes do not meet the ion implantation requirements for the production costs required for the devices produced by the process.

  Typical examples of such processes include several processes for manufacturing solar cell substrates. By applying ion implantation to these processes, the dose amount of impurities implanted into the solar cell substrate and the distribution in the depth direction can be accurately controlled. Thereby, the performance improvement of the solar cell is expected. However, the ion beam current for implantation does not reach the required level. Therefore, ion implantation does not provide sufficient productivity for the production of solar cell substrates.

  One exemplary object of certain aspects of the present invention is to provide an ion implanter and ion implantation method that provides a high beam current to help improve the productivity of some processes.

  According to one aspect of the present invention, an ion comprising: a plasma chamber; a plasma source for generating plasma in the plasma chamber; and an extraction electrode system for extracting an ion beam having a long beam cross section from the plasma chamber. And a substrate moving mechanism for moving the substrate along a substrate moving path passing through the ion beam irradiation region, the processing chamber being provided adjacent to the ion source and receiving the ion beam from the extraction electrode system A control chamber for controlling ion beam generation conditions of the ion source, the ion beam having a beam current determined according to the ion beam generation conditions, and the ion beam The substrate that is moving in the ion beam irradiation region from the extraction electrode system is directly irradiated while holding the beam current. Ion implantation apparatus is provided that.

  According to another aspect of the present invention, the ion beam generation conditions of the ion source are controlled, the ion beam is extracted through the extraction electrode system of the ion source, and the ion beam is received from the ion source into the processing chamber. And moving the substrate through the ion beam irradiation region of the processing chamber, wherein the ion beam has a beam current determined according to the ion beam generation conditions, and the ion beam includes the ion beam An ion implantation method is provided in which the substrate moving in the ion beam irradiation region from the extraction electrode system is directly irradiated while holding the beam current.

  According to another aspect of the present invention, an ion source including an extraction electrode system for extracting an ion beam, and a processing chamber for receiving the ion beam from the ion source, the ion beam irradiation region passing through the substrate. And the extraction beam has characteristics that are determined according to ion beam generation conditions of the ion source, and the extraction electrode while the substrate passes through the ion beam irradiation region. There is provided an ion implantation apparatus characterized in that the substrate is moved directly through the ion beam irradiation region while maintaining the characteristics from the system to the ion beam irradiation region.

  According to another aspect of the present invention, an ion beam is extracted through an extraction electrode system of an ion source, the ion beam is received from the ion source into a processing chamber, and an ion beam irradiation region of the processing chamber is used as a substrate. The ion beam has a characteristic that is determined according to ion beam generation conditions of the ion source, and from the extraction electrode system while the substrate passes through the ion beam irradiation region. An ion implantation method is provided in which the substrate is moved directly through the ion beam irradiation region while maintaining the characteristics to the ion beam irradiation region.

  Note that any combination of the above-described constituent elements and the constituent elements and expressions of the present invention replaced with each other among methods, apparatuses, systems, programs, and the like are also effective as an aspect of the present invention.

  ADVANTAGE OF THE INVENTION According to this invention, the ion implantation apparatus and ion implantation method which are useful for productivity improvement can be provided.

1 is a diagram schematically showing an ion implantation apparatus according to an embodiment of the present invention. 1 is a perspective view schematically showing a part of an ion implantation apparatus according to an embodiment of the present invention. It is a figure which shows schematically the extraction electrode system of the ion implantation apparatus which concerns on one embodiment of this invention. It is a top view which shows roughly the beam measurement system of the ion implantation apparatus which concerns on one embodiment of this invention. It is a figure which shows the implantation profile obtained by the ion implantation apparatus which concerns on a certain embodiment of this invention. 1 is a plan view schematically showing an in-line type vacuum chamber system for an ion implantation apparatus according to an embodiment of the present invention. FIG. It is a flowchart showing the ion implantation method which concerns on a certain embodiment of this invention.

  Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and repeated descriptions are omitted as appropriate. Moreover, the structure described below is an illustration and does not limit the scope of the present invention at all.

  An ion implantation apparatus according to an embodiment of the present invention is configured to control the characteristics of an ion beam at the stage of ion implantation into a substrate at the stage of ion beam generation. The ion beam generation stage refers to the process from generation of plasma, which is a source of ions, to extraction of ions. An ion beam is generated by extracting ions. The extracted ions are implanted into the substrate.

  In this way, an ion beam having controlled beam characteristics is directly irradiated onto the substrate. Since the beam line from ion extraction to ion implantation can be made very short, the loss of ions during transport can be minimized. Therefore, since ions can be implanted into the substrate with a high beam current when extracted, an ion implantation apparatus having high productivity can be provided.

  FIG. 1 schematically shows an ion implantation apparatus 10 according to an embodiment of the present invention. FIG. 1 is a side view of the ion implantation apparatus 10. FIG. 2 is a perspective view schematically showing a part of an ion implantation apparatus 10 according to an embodiment of the present invention. FIG. 2 also shows a partial cross section of the ion implantation apparatus 10 in a plane parallel to the paper surface in FIG. In FIG. 2, the cross-sectional area is hatched.

  The ion implantation apparatus 10 is configured to irradiate the substrate S with the ion beam 12. The ion beam 12 has a long beam cross section extending in the longitudinal direction (direction perpendicular to the paper surface in FIG. 1). Hereinafter, the ion beam 12 may be referred to as a ribbon beam 12. The ribbon beam 12 forms an ion beam irradiation region (hereinafter also referred to as an ion beam region) 14 corresponding to the cross section in the process chamber 26. At a certain point in time, the ion beam region 14 is in a certain part on the surface of the substrate S. For easy understanding, fine dots are attached to the ion beam region 14 in FIG. In the process chamber 26, the substrate S passes through the ion beam region 14 along the substrate movement path A. In this way, ion implantation can be performed over a wide range of the surface of the substrate S.

  In this embodiment, the substrate S is a solar cell substrate or a solar battery cell. Therefore, the ion implantation apparatus 10 is used for manufacturing a solar cell substrate. In most cases, the substrate S is a semiconductor member having a flat plate shape, but the substrate S may be an object to be processed having any other shape and material. The substrate S may be a single large substrate or a plurality of small substrates. When the substrate S indicates a plurality of substrates, the substrate S may include a container such as a tray for arranging the substrates in a plane (for example, in a matrix). This tray may be configured so that, for example, each row can be simultaneously injected into a substrate having a matrix arrangement of four rows or more. Further, the substrate S may be covered with a mask. Hereinafter, for convenience of explanation, such a substrate, a container, a mask, and other objects to be processed may be collectively referred to as a substrate S.

  As shown in FIG. 1, the ion implanter 10 includes an ion source 18 that is configured to generate a ribbon beam 12. The ion source 18 provides the ribbon beam 12 to the central chamber 16. The ion source 18 includes a plasma chamber 20, a plasma source 22 for generating plasma 21 in the plasma chamber 20, and an extraction electrode system 24 for extracting the ribbon beam 12 from the plasma chamber 20. The ion implantation apparatus 10 also includes a vacuum exhaust system (not shown) for providing a desired vacuum environment to the ion source 18 and the central chamber 16.

  The ion implanter 10 includes a central chamber 16. Central chamber 16 is connected to ion source 18 to receive ribbon beam 12 from ion source 18. The central chamber 16 includes a process chamber 26 for performing ion implantation processing of the substrate S using the ribbon beam 12. The central chamber 16 also includes an upstream buffer chamber 28 and a downstream buffer chamber 30 connected to the process chamber 26. Note that the central chamber 16 is not shown in FIG. 2 to avoid unnecessarily complicating the drawing.

  The central chamber 16 includes a substrate moving mechanism (see FIG. 6) for moving the substrate S along the substrate moving path A. The substrate movement path A is a linear path extending in a direction perpendicular to the longitudinal direction of the ribbon beam 12 and passes through the upstream buffer chamber 28, the process chamber 26, and the downstream buffer chamber 30. The substrate movement path A passes through the ion beam region 14 in the process chamber 26. The substrate moving mechanism is configured to continuously move the substrate S along the substrate moving path A. The substrate moving mechanism can move the substrate S at a substantially constant speed. The configuration of such an in-line type vacuum chamber will be described later in detail with reference to FIG.

  The process chamber 26 is provided adjacent to the ion source 18. The process chamber 26 receives the ribbon beam 12 exiting from the ion source 18 (exactly the extraction electrode system 24). Accordingly, the process chamber 26 has the ion beam region 14 therein. The extraction electrode system 24 is exposed when viewed from the ion beam region 14 of the process chamber 26.

  The ion implantation apparatus 10 includes a control unit 32 for controlling the ion implantation apparatus 10. In particular, the control unit 32 is provided to control the ion beam generation conditions of the ion source 18. The ion beam generation conditions include, for example, ion beam control conditions for the extraction electrode system 24 and / or plasma control conditions for the plasma source 22. The ion beam control conditions include the ion beam extraction conditions of the extraction electrode system 24. The ion beam extraction conditions include, for example, the extraction voltage of the extraction electrode system 24. The ion beam control condition may include a plasma control condition. Therefore, the control unit 32 is configured to control at least one of the plasma source 22 and the extraction electrode system 24. The controller 32 may be configured to control the entire ion implantation apparatus 10 including the ion source 18 and the substrate moving mechanism.

  The ribbon beam 12 has beam characteristics that are determined according to ion beam generation conditions. The beam characteristics include, for example, the beam current of the ribbon beam 12, the ion composition of the ribbon beam 12, and / or the uniformity in the cross section of the ribbon beam 12. Since the process chamber 26 is adjacent to the ion source 18, the ribbon beam 12 is directly irradiated onto the ion beam region 14 from the extraction electrode system 24. Therefore, the characteristics of the ribbon beam 12 are already determined at the stage of being extracted through the extraction electrode system 24, and the beam characteristics are maintained in the beam transport space from the extraction electrode system 24 to the process chamber 26. Therefore, ion implantation characteristics (for example, implantation dose, implantation energy, and / or implantation profile) obtained on the substrate S are determined according to the ion beam generation conditions of the ion source 18.

  Therefore, as will be described in detail later, the control unit 32 controls the ion beam generation conditions based on a given implantation condition (for example, implantation dose) to the substrate S and a given substrate moving speed ( For example, the beam current of the ribbon beam 12 is adjusted by changing ion beam extraction conditions. In one embodiment, the control unit 32 controls the ion composition of the ion beam 12 by changing the plasma control condition of the plasma source 22. For example, the ratio of monomer ions and dimer ions of ionic species to be implanted into the substrate S is controlled. Thus, the implanted dopant current can be controlled.

  The ion implanter 10 includes a beam guide 34 that connects the ion source 18 to the process chamber 26. Accordingly, the process chamber 26 is adjacent to the ion source 18 via the beam guide 34. The beam guide 34 is a cylindrical member surrounding the ribbon beam 12 and provides a vacuum environment between the ion source 18 and the process chamber 26 for transporting the ribbon beam 12. The inner surface of the beam guide 34 is separated from the outer peripheral portion of the ribbon beam 12 so as not to obstruct the ribbon beam 12. An adhesion preventing plate (for example, a graphite liner) for preventing particles may be attached to the inner wall surface of the beam guide 34.

  As shown in FIG. 2, the ion implantation apparatus 10 includes a high voltage insulator 48 attached between the plasma chamber 20 and the beam guide 34. The high voltage insulator 48 insulates the beam guide 34 from the plasma chamber 20. Accordingly, the process chamber 26 is also insulated from the plasma chamber 20. The high voltage insulator 48 is provided so as to surround the extraction electrode system 24.

  In this manner, the ion implantation apparatus 10 has a straight beam line. This linear beam line is interposed between the ion source 18 and the process chamber 26 in order to transport the ion beam 12 extracted by the extraction electrode system 24 to the process chamber 26 as it is. The beam line is very short and does not have beam line components that affect the beam characteristics (eg, beam current) of the ion beam 12. For example, unlike a general apparatus, the ion implantation apparatus 10 does not have a mass analyzer. In this way, the ion beam 12 is directly applied to the substrate S. Since the ion implantation apparatus 10 has a beam line with such a simple configuration, the manufacturing cost can be reduced.

  The ion source 18 will be further described with reference to FIGS. The plasma chamber 20 provides a space for holding and containing the generated plasma 21. The plasma chamber 20 has a magnet (not shown) for confining the plasma 21 at or near the wall portion. This plasma accommodating space has, for example, a rectangular parallelepiped shape, a plasma source 22 is provided on the upper side, and an extraction electrode system 24 is provided on the lower side.

  As shown in FIG. 2, the plasma chamber 20 has a plurality of outlet openings 50 for taking out the plasma 21 to the outside. An outlet opening 50 is provided in connection with the extraction electrode system 24. Thus, the plasma source 22 faces the extraction electrode system 24 and the outlet opening 50.

  The plurality of outlet openings 50 are formed adjacent to each other, and each has an elongated shape extending in a direction perpendicular to the substrate movement path A. The plurality of outlet openings 50 are arranged in parallel with each other at equal intervals. The plasma chamber 20 may include a beam shutter (not shown) for opening and closing part or all of the plurality of outlet openings 50. It is possible to extract the ion beam 12 from the plasma chamber 20 when the beam shutter is opened, and when the beam shutter is closed, the extraction of the ion beam 12 is physically blocked, and the ion beam amount can be reduced. it can.

Returning to FIG. The plasma source 22 includes a gas supply source 36 for supplying a source gas to the plasma chamber 20. The source gas contains a desired ionic species to be implanted into the substrate S. For example, when the ion species implanted into the substrate S is phosphorus (P), the source gas is, for example, PH ₃ diluted with H ₂ . When the ion species implanted into the substrate S is boron (B), the source gas is, for example, B ₂ H ₆ diluted with H ₂ . Further, the source gas may be H ₂ for hydrogen passivation of the substrate S. The source gas may include an optional dilution gas different from H ₂ , an assist gas for improving plasma ignitability, and / or other noble gases as necessary.

  The gas supply source 36 is connected to the plasma chamber 20 via a gas pipe 38. The source gas is supplied to the plasma chamber 20 through the gas pipe 38. In order to adjust the concentration and / or flow rate of the source gas introduced into the plasma chamber 20, a gas adjusting unit (for example, a mass flow controller) may be provided in the gas supply source 36 and / or the gas pipe 38.

  The plasma source 22 includes a high-frequency plasma excitation source, for example, an RF antenna 40, for generating the plasma 21 from the source gas in the process chamber 26. In addition, the plasma source 22 includes an RF matching box 42 and an RF power supply 44 for supplying power to the RF antenna 40. The RF antenna 40 is provided in the plasma chamber 20, and the RF matching box 42 and the RF power supply 44 are provided outside the plasma chamber 20. The RF matching box 42 is attached to the outside of the plasma chamber 20. Thus, the ion source 18 is configured as an RF plasma excitation type ion source.

  As shown in FIG. 2, the plasma source 22 includes a plurality of RF antennas 40 and a plurality of RF matching boxes 42. The RF matching box 42 is provided for each RF antenna 40. The plurality of RF antennas 40 are arranged along the outlet opening 50 of the plasma chamber 20. Thereby, the long plasma 21 can be generated in the plasma chamber 20 along the outlet opening 50. Thus, the ion source 18 is a bucket type ion source.

  As shown in FIG. 1, the plasma source 22 includes a source box 46. The source box 46 houses the gas supply source 36 and the RF power source 44. A voltage corresponding to the desired implantation energy is applied to the plasma chamber 20 and the source box 46 by, for example, a power supply device 70 (see FIG. 3) described later. Therefore, a voltage corresponding to the desired implantation energy can be applied to the outlet opening 50 of the plasma chamber 20.

  The control unit 32 controls the plasma source 22 according to the plasma control conditions. Thereby, the source gas is supplied from the gas supply source 36 to the plasma chamber 20, and power is supplied from the RF power supply 44 to the RF antenna 40. As a result, the plasma 21 containing the desired ion species is excited in the plasma chamber 20.

  The plasma control conditions include one or more plasma control parameters for controlling the plasma 21. The plasma control parameters include, for example, source gas concentration (for example, hydrogen dilution rate), source gas flow rate, total RF power of the ion source 18, RF power of each RF antenna 40, position of each RF antenna 40, and desired implantation energy. However, the applied voltage is not limited to these. The plasma 21 can be controlled by adjusting or changing the plasma control parameters. By controlling the plasma 21, for example, the beam current of the ribbon beam 12 can be adjusted somewhat.

Alternatively, the ratio of monomer ions and dimer ions in the plasma 21 can be controlled by adjusting the concentration, flow rate, and RF power of the source gas introduced into the plasma chamber 20. When the dopant is phosphorus, the ratio between the monomer ion PH _x ⁺ and the dimer ion P ₂ H _x ⁺ can be controlled. Similarly, when the dopant is boron, the ratio of the monomer ion BH _x ⁺ to the dimer ion B ₂ H _x ⁺ can be controlled. Therefore, the control unit 32 can control the implantation dopant current and / or the implantation profile of the substrate S by changing the plasma control condition.

  FIG. 3 is a diagram schematically showing the extraction electrode system 24 of the ion implantation apparatus 10 according to an embodiment of the present invention. The extraction electrode system 24 includes a plasma electrode 52 and an extraction acceleration electrode portion 54. The plasma electrode 52 has the plurality of outlet openings 50 described above. The plasma electrode 52 is a bottom plate that partitions the inside of the plasma chamber 20 from the outside. The extraction acceleration electrode unit 54 includes an extraction electrode 56, a suppression electrode 58, and a ground electrode 60. Therefore, the extraction electrode system 24 includes four electrodes.

  The four electrodes of the extraction electrode system 24, that is, the plasma electrode 52, the extraction electrode 56, the suppression electrode 58, and the ground electrode 60 are arranged in the order described in the direction from the ion source 18 to the process chamber 26. . Each of these electrodes is a flat plate with a slit and is arranged in parallel to each other. The distance between the plasma electrode 52 and the extraction electrode 56 is narrower than the distance between the extraction electrode 56 and the suppression electrode 58. The distance between the extraction electrode 56 and the suppression electrode 58 is wider than the distance between the suppression electrode 58 and the ground electrode 60.

  The extraction electrode system 24 has a plurality of slits corresponding to the plurality of outlet openings 50 of the plasma electrode 52. That is, the extraction electrode 56, the suppression electrode 58, and the ground electrode 60 have the same shape and arrangement as the plurality of outlet openings 50 of the plasma electrode 52, and the plurality of second slits 62, the plurality of third slits 64, and the plurality The fourth slit 66 is provided. Therefore, a plurality of adjacent long openings are formed in each electrode of the extraction acceleration electrode portion 54. These long openings are formed along a direction perpendicular to the substrate movement path A. The outlet opening 50 of the plasma electrode 52 can also be called the first slit of the extraction electrode system 24.

  The first through fourth slits provide a linear slit path for the ion beam extracted from the plasma chamber 20. Long ion beams 68 are extracted through the individual slit paths. The ribbon beam 12 is formed by the plurality of long ion beams 68 corresponding to the plurality of slit paths. By providing a plurality of slit paths along the substrate movement path A in this way, a wide ribbon beam 12 (that is, a wide ion beam region 14) can be obtained. Such a slit configuration is useful for increasing the area of the ribbon beam 12. The extraction electrode system 24 is designed so that the ribbon beam 12 having uniformity in the longitudinal direction of the ribbon beam 12 (at least over the width of the substrate S) can be extracted.

  The extraction electrode system 24 includes a power supply device 70 for applying a voltage to each electrode. The power supply device 70 includes an extraction power source 72, an acceleration power source 74, and a suppression power source 76 in association with the plasma electrode 52, the extraction electrode 56, and the suppression electrode 58. These power sources are DC power sources with variable voltages, and are controlled by the control unit 32.

  The extraction power source 72 is connected between the plasma electrode 52 and the extraction electrode 56 so as to apply a positive extraction voltage Vex to the plasma electrode 52. The acceleration power source 74 is connected between the extraction electrode 56 and the ground electrode 60 so as to apply a positive acceleration voltage to the extraction electrode 56. The suppression power source 76 is connected between the suppression electrode 58 and the ground electrode 60 so as to apply a negative suppression voltage to the suppression electrode 58. The ground electrode 60 is grounded.

  The control unit 32 controls the extraction electrode system 24 according to the ion beam extraction conditions. When the power supply device 70 applies a voltage to the extraction electrode system 24 in accordance with the extraction conditions, the ribbon beam 12 is continuously extracted from the plasma chamber 20 through the extraction electrode system 24. The drawn ribbon beam 12 passes through the beam guide 34 and enters the process chamber 26 as it is.

  Therefore, the ion composition of the ribbon beam 12 extracted by the extraction electrode system 24 is derived from the plasma 21. As described above, since the plasma 21 includes monomer ions and dimer ions of the dopant implanted into the substrate S, the ribbon beam 12 also includes monomer ions and dimer ions. Since the ribbon beam 12 is incident on the process chamber 26 without going through the mass analyzer, the ion beam region 14 is allowed to receive both monomer ions and dimer ions.

  The ion beam extraction conditions include one or more extraction control parameters for controlling the extraction electrode system 24. The extraction control parameters include, for example, the extraction voltage Vex, the suppression voltage, the shape of the outlet opening 50, the distance between the plasma electrode 52 and the extraction electrode 56, and the beam longitudinal distribution of the distance between the plasma electrode 52 and the extraction electrode 56. It is not limited to. The ribbon beam 12 can be controlled by adjusting or changing the drawing control parameter.

  For example, the control unit 32 may control the extraction beam current by changing the extraction voltage Vex and / or the suppression voltage so as to keep the implantation energy constant. Alternatively, the control unit 32 may control the extraction beam current by adjusting the shape of the outlet opening 50. For this purpose, the plasma electrode 52 may have a variable outlet opening.

  The controller 32 may control the extraction beam current by changing the position and / or shape of at least one electrode of the extraction electrode system 24. Therefore, for example, an actuator for adjusting the distance between the plasma electrode 52 and the extraction electrode 56 may be provided in the plasma electrode 52 and / or the extraction electrode 56. In order to adjust the beam longitudinal distribution of the distance between the plasma electrode 52 and the extraction electrode 56, an actuator for moving and / or deforming the plasma electrode 52 and / or the extraction electrode 56 may be provided.

  FIG. 4 is a plan view schematically showing a beam measurement system 78 of the ion implantation apparatus 10 according to an embodiment of the present invention. The beam measurement system 78 will be described with reference to FIGS.

  Unlike FIG. 1, the positional relationship between the substrate S and the ribbon beam 12 shown in FIG. 4 is the state before ion implantation. The substrate S is moving toward the ribbon beam 12 at the substrate scanning speed Vs. The substrate S does not overlap the ribbon beam 12, and ion implantation has not yet started. Here, the substrate S may be a large number of substrates and a tray for placing them. In FIG. 4, a tray is shown that enables a 7 × 5 matrix substrate arrangement. The ribbon beam 12 is simultaneously irradiated onto the five rows of substrates.

  As shown in FIG. 1, the beam measurement system 78 is accommodated in a measurement chamber 80. The measurement chamber 80 is below the process chamber 26. That is, the measurement chamber 80 and the ion source 18 are on opposite sides of the process chamber 26. Measurement chamber 80 is configured to receive ribbon beam 12 from ion source 18 through process chamber 26. Therefore, the beam measurement system 78 is on the downstream side of the beam path from the substrate S.

  The beam measurement system 78 is configured to measure the characteristics of the ribbon beam 12. The beam measurement system 78 includes a scan Faraday 82, a fixed Faraday 84, and a mass analyzer 86. The scan Faraday 82, the fixed Faraday 84, and the mass analyzer 86 are arranged in this order along the transport direction of the ribbon beam 12. Thus, the mass analyzer 86 is located at the end of the beam path.

  The scan Faraday 82, the fixed Faraday 84, and the mass analyzer 86 can output measurement results to the control unit 32, respectively. The scan Faraday 82 and / or the fixed Faraday 84 are configured to measure the implantation beam current before and / or during implantation into the substrate S.

  The scan Faraday 82 is a high-speed moving profile monitor that moves in the longitudinal direction of the ribbon beam 12. The scan Faraday 82 is a movable beam current measuring device, for example, a Faraday cup. The scan Faraday 82 is provided for measuring the uniformity of the beam current in the longitudinal direction of the ribbon beam 12. As shown in FIG. 4, the scan Faraday 82 measures the beam intensity of the ribbon beam 12 while scanning the movable range C including the longitudinal width of the ribbon beam 12. By measuring at a plurality of positions in the movable range C, the beam current uniformity of the ribbon beam 12 can be measured.

  The movable range C of the scan Faraday 82 reaches the longitudinal end of the ribbon beam 12. Since the longitudinal width of the ribbon beam 12 is wider than that of the substrate S, the end of the ribbon beam 12 passes through the side of the substrate S even when the substrate S enters the ribbon beam 12. Therefore, the scan Faraday 82 can measure the beam current of the ribbon beam 12 (at the beam end) even when the substrate S enters the ribbon beam 12. Therefore, the scan Faraday 82 can measure the beam current not only before and after the injection but also during the injection.

  The controller 32 may control the beam current uniformity in the longitudinal direction of the ribbon beam 12 using the measurement result of the beam current uniformity. For example, the control unit 32 may adjust the input power to each of a plurality of plasma excitation sources (for example, the RF antenna 40) in order to improve the beam current uniformity. Alternatively, in order to improve the beam current uniformity, the plasma electrode 52 and / or the extraction electrode 56 may be moved and / or deformed to adjust the beam longitudinal distribution of the distance between the plasma electrode 52 and the extraction electrode 56. Good.

  Note that the measuring device for measuring the beam current uniformity may not be movable. For example, the beam current uniformity can be measured using a number of measuring devices arranged in the longitudinal direction of the beam. The beam current measuring device may include a fixed Faraday 84 described below.

  The fixed Faraday 84 is a fixed beam current measuring device, for example, a Faraday cup. Fixed Faraday 84 is provided to measure the average beam intensity. For example, three fixed Faraday 84 are provided, two of which are arranged at both ends of the ribbon beam 12 and the other one is arranged at the center of the ribbon beam 12. The fixed Faraday 84 at both ends is arranged so that the beam current of the ribbon beam 12 can be measured even when the substrate S enters the ribbon beam 12. Thus, the fixed Faraday 84 can also measure the beam current during implantation as well as before and after implantation. The central fixed Faraday 84 is used, for example, for beam current measurement before injection. Therefore, the control unit 32 can use the average of the measurement values of a plurality of (for example, three) fixed Faraday 84 as the pre-injection beam current.

The mass analyzer 86 measures the ion current for each ion type. The ribbon beam 12 includes at least dopant ions and hydrogen ions (H _x ⁺ ) derived from the source gas composition. Dopant ions include monomer ions and dimer ions. Thus, the mass analyzer 86 can measure the ion current of monomer ions, dimer ions, hydrogen ions, and other ions (if any). The mass analyzer 86 can measure the ratio of the dopant ion current to the beam current of the ribbon beam 12 (ie, the dopant ratio Fd). The mass analyzer 86 can measure the ion composition of the ribbon beam 12.

  The ribbon beam 12 selectively irradiates the substrate S and the mass analyzer 86. In other words, the mass analyzer 86 is disposed at a location that does not receive the ribbon beam 12 when the substrate S is irradiated with the ribbon beam 12. Therefore, the mass analyzer 86 performs beam mass spectrometry measurement between the processing of one substrate and the next substrate in a continuous implantation process for a plurality of substrates.

  Since the ion implantation apparatus 10 is configured in an inline type, a plurality of substrates pass through the ribbon beam 12 sequentially and sequentially. It is desirable that the processing time for each of the plurality of substrates be constant. Therefore, it is desirable to move a plurality of substrates at a constant substrate scanning speed Vs that matches the constant processing time. However, ion implantation conditions may vary depending on the substrate.

  Therefore, the control unit 32 adjusts the beam current J of the ribbon beam 12 by controlling the extraction voltage Vex based on the desired implantation dose D to the substrate S and the substrate scanning speed Vs. The beam current J can be expressed as J (Vex) as a function of the extraction voltage Vex. The implantation dose amount D, the substrate scanning speed Vs, and the beam current J (Vex) can be associated with each other. An example of such association is shown in the following equation. Here, qe is an electronic charge, and α is a proportionality constant. The proportionality constant α is determined depending on the beam measurement system 78, for example.

  As described above, the state of the plasma 21 is determined from the concentration, flow rate, and RF power of the source gas. When these plasma control parameters are kept constant, the plasma state is kept constant and the dopant ratio Fd is constant. Since the implantation dose D, the electron charge qe, and the proportionality constant α are all constants, the above equation gives the relationship between the substrate scanning speed Vs and the beam current J (Vex).

  Therefore, the control unit 32 can set the beam current J (Vex) and the extraction voltage Vex before injection in accordance with the given conditions. That is, the control unit 32 can control the extraction voltage Vex so as to give a desired implantation dose amount D and maintain a constant substrate scanning speed Vs. The controller 32 derives the beam current J from the right side of the relational expression before injection into the substrate S, and sets the extraction power source 72 to the extraction voltage Vex corresponding to the current value. As a result, a ribbon beam 12 having a beam current J (Vex) corresponding to the extraction voltage Vex is irradiated onto the substrate S.

  Instead of the extraction voltage Vex or together with the extraction voltage Vex, the control unit 32 may control the suppression voltage. In this way, similarly, the implantation dose D and the substrate scanning speed Vs can be realized. At this time, the control unit 32 may control the ion beam extraction conditions so as to obtain the implantation dose amount D and maintain a predetermined implantation profile.

  In an embodiment, the control unit 32 may perform feedback control of the beam current J. The control unit 32 may control the beam current J before and / or during the injection based on the beam current measurement result before and / or during the injection. For example, the control unit 32 may control the ion beam extraction condition (for example, extraction voltage Vex) so that the measured beam current matches the target beam current. The target beam current is given by, for example, the right side of the above relational expression. In some embodiments, the control unit 32 may control the substrate scanning speed Vs based on the measured beam current and the implantation dose D before and / or during the implantation.

  In an embodiment, the control unit 32 may control the ion source 18 by combining a change in plasma control conditions and a change in ion beam extraction conditions. In this case, the plasma source 22 is operated according to the changed plasma control condition, and the extraction electrode system 24 is operated according to the changed ion beam extraction condition. The control unit 32 may execute optimal control using such composite control. For example, the control unit 32 may perform composite control so as to maximize the extraction beam current and / or the dopant implantation beam current. Alternatively, the control unit 32 may execute composite control so as to obtain the best beam uniformity.

  Furthermore, in a certain embodiment, the control part 32 may control the dopant ratio Fd by changing the plasma control conditions of the plasma source 22. By controlling the dopant ratio Fd, the implantation profile can be improved.

  FIG. 5 is a diagram showing an implantation profile obtained by the ion implantation apparatus 10 according to an embodiment of the present invention. In FIG. 5, the vertical axis represents the dopant concentration, and the horizontal axis represents the implantation depth. As shown in the figure, according to the ion implantation apparatus 10, it is possible to obtain an implantation profile that has a remarkable peak on almost the surface of the substrate S and whose dopant concentration monotonously decreases as the depth increases. Such a profile is preferable in terms of performance by the solar cell. It is considered that the profile is improved in this way because the ribbon beam 12 contains dimer ions of the dopant. The comparative example shown in FIG. 5 is a profile obtained when only monomer ions are implanted by a conventional ion implantation apparatus. The comparative example has a peak at a deeper position than the example.

  FIG. 6 is a plan view schematically showing an in-line type vacuum chamber system 100 for the ion implantation apparatus 10 according to an embodiment of the present invention. The vacuum chamber system 100 includes a central chamber 16 as described above, and the central chamber 16 includes a process chamber 26, an upstream buffer chamber 28, and a downstream buffer chamber 30. The ribbon beam 12 is supplied to the process chamber 26.

  The vacuum chamber system 100 includes a substrate transfer system 102 for moving the substrate S along the substrate movement path A. The substrate transport system 102 transports the substrate S in one direction along the substrate movement path A, thereby enabling one-scan injection processing. The substrate transfer system 102 includes a substrate transfer mechanism for the central chamber 16.

  The vacuum chamber system 100 includes a first load lock chamber 104 upstream of the central chamber 16 and a second load lock chamber 106 downstream of the central chamber 16. The first load lock chamber 104 is attached to the upstream buffer chamber 28 of the central chamber 16 via the first load lock valve 108. The second load lock chamber 106 is attached to the downstream buffer chamber 30 of the central chamber 16 via the second load lock valve 110.

  When required, the vacuum chamber system 100 includes a pre-process processing unit 111 and a post-process processing unit 112. The pre-process processing unit 111 performs a pre-process of ion implantation processing to the substrate S performed in the central chamber 16. The post-process processing unit 112 performs a post-process for the ion implantation process. The pre-process processing unit 111 is attached to the first load lock chamber 104 via the third load lock valve 114. The post-process processing unit 112 is attached to the second load lock chamber 106 via the fourth load lock valve 116.

  Accordingly, the substrate transport system 102 is configured to transport the substrate S in the order of the pre-process processing unit 111, the first load lock chamber 104, the central chamber 16, the second load lock chamber 106, and the post-process processing unit 112. As shown in the figure, the substrate transport system 102 continuously transports a plurality of substrates S and enables in-line ion implantation processing. The central chamber 16 is configured to accommodate two substrates S simultaneously. 1 and 6 show a substrate S1 that is undergoing an ion implantation process and a substrate S2 that is processed next.

  The first load lock chamber 104 and the second load lock chamber 106 are provided for transferring the substrate S between the atmospheric atmosphere and the high vacuum environment of the central chamber 16. When the pre-process processing unit 111 and / or the post-process processing unit 112 are in the same high vacuum environment as the central chamber 16, the first load lock chamber 104 and / or the second load lock chamber 106 are not required. There is also.

  The load lock chambers 104 and 106 may be configured to perform venting and luffing evacuation operations when the substrate S is transferred to and from the central chamber 16. In this way, leakage of the source gas to the outside can be prevented. Such a load lock method is preferable when a toxic source gas is used.

  A mask M may be used for the ion implantation process in the central chamber 16. Therefore, the pre-process processing unit 111 may be configured to attach the mask M to the substrate S (for example, a solar cell tray, the same applies to the following in the figure). In this case, ion implantation into the substrate S is performed in the process chamber 26 with the mask M attached. The post-process processing unit 112 may be configured to remove the mask M from the processed substrate S. In order to attach and detach such a mask M, a mask detachment cell tray transfer mechanism 118 may be installed outside the vacuum chamber system 100. The transport mechanism 118 may be configured to transport the removed mask M for remounting.

  A transfer control device 120 for controlling the vacuum chamber system 100 and the substrate transfer system 102 is provided. The transfer control device 120 may be configured integrally with the control unit 32 for the ion implantation apparatus 10 or may be provided separately from the control unit 32.

  The transport control device 120 can set the substrate scanning speed Vs in the substrate transport system 102 to be constant. The transport control device 120 may set the substrate scanning speed Vs according to the ion beam generation conditions and / or the ion implantation conditions to the substrate S.

  Alternatively, the transfer control device 120 may adjust the substrate scanning speed Vs as necessary. For example, the transfer control device 120 may adjust the substrate scanning speed Vs while the substrate S passes through the ion beam region 14. Alternatively, the transfer control device 120 may change the substrate scanning speed Vs between when the substrate S passes through the ion beam region 14 and when the substrate S is removed from the ion beam region 14.

  The substrate transport system 102 may include a cooling device for the substrate S to be transported. The cooling device may be configured to distribute the cooling liquid to a table and / or tray on which the substrate is placed. For good thermal contact between the substrate and its mounting surface, the mounting surface may have a surface roughness of, for example, about 30 μm in Ra. The mounting surface may be roughened by, for example, Si spraying.

  The operation of the ion implantation apparatus 10 will be described. The case where the board | substrate S is the photovoltaic cell tray S which mounted the several photovoltaic cell in the matrix form is demonstrated as an example. First, ion beam generation conditions including plasma control conditions and ion beam extraction conditions are set from desired ion implantation conditions and the scanning speed Vs of the in-line vacuum chamber 100.

  The ion source 18 is operated according to the ion beam generation conditions. The plasma source 22 is operated according to the plasma control conditions, and the plasma 21 containing the desired ion species is excited in the plasma chamber 20. The extraction electrode system 24 is operated according to the ion beam extraction conditions, and the ribbon beam 12 is continuously extracted from the plasma chamber 20 through the extraction electrode system 24. The drawn ribbon beam 12 is directly incident on the process chamber 26. In this way, the long ribbon beam 12 that satisfies the width of the solar battery cell tray S is constantly irradiated to the process chamber 26.

  The solar cell tray S is transferred from the previous process to the front of the first load lock chamber 104. A mask M is attached to the solar battery cell tray S as necessary. The third load lock valve 114 is opened, and the solar cell tray S is inserted into the first load lock chamber 104. The third load lock valve 114 is closed, and the first load lock chamber 104 is roughed by a roughing pump (not shown). Next, the first load lock valve 108 is opened, and the solar cell tray S is transferred to the upstream buffer chamber 28. The first load lock valve 108 is closed, and the solar cell tray S is accommodated in the upstream buffer chamber 28.

  The solar battery cell tray S is conveyed to the downstream buffer chamber 30 while passing through the lower part of the ribbon beam 12 at the scanning speed Vs by the cell tray scanning mechanism 102 in the central chamber 16. When the solar cell tray S is moving in the process chamber 26, the ribbon beam 12 is irradiated onto the solar cell tray S and ion implantation is performed. During ion implantation, ion beam generation conditions are changed as necessary based on measurement results. Thereby, desired injection is performed under the scanning speed Vs.

  FIGS. 1 and 6 show a solar cell tray S1 that is undergoing an ion implantation process and a solar cell tray S2 that is processed next. Both the preceding cell tray S1 and the succeeding cell tray S2 are carried at the same scanning speed Vs. The succeeding cell tray S2 follows the preceding cell tray S1 at a certain interval. When the cell tray S1 completely passes through the ribbon beam 12, one ion implantation process to the cell tray S1 is completed. Subsequently, the next cell tray S2 enters the ribbon beam 12, and ion implantation of the cell tray S2 is started.

  After the second load lock chamber 106 is roughly pulled, the second load lock valve 110 is opened, and the injected solar cell tray S is transferred to the second load lock chamber 106. The second load lock valve 110 is closed and the second load lock chamber 106 is vented to atmospheric pressure. Thereafter, the fourth load lock valve 116 is opened, and the solar battery cell tray S is delivered to the post-processing unit 112. When the mask M is attached, the mask M is removed from the solar battery cell tray S. The mask M is returned to the pre-process unit 111 by the mask loading / unloading cell tray transfer mechanism 118.

  FIG. 7 is a flowchart showing an ion implantation method according to an embodiment of the present invention. This ion implantation method is executed by the control unit 32 and / or the transfer control device 120. As shown in FIG. 7, the method includes an ion beam generation step (S10) and an ion implantation step (S20).

  The ion beam generation step (S10) sets and / or controls the ion beam generation conditions of the ion source 18, generates the plasma 21 in the plasma chamber 20 of the ion source 18, and the extraction electrode system of the ion source 18. Extracting the ion beam 12 through 24. The ion beam 12 has characteristics (for example, beam current) determined according to ion beam generation conditions.

  The ion implantation step (S20) comprises receiving the ion beam 12 from the ion source 18 into the process chamber 26 and moving the substrate S through the ion beam region 14 of the process chamber 26. While the substrate S passes through the ion beam region 14, the ion beam 12 is directly irradiated from the extraction electrode system 24 to the ion beam region 14. The beam characteristics determined at the stage of extraction from the extraction electrode system 24 are maintained in the ion beam region 14.

  As described above, according to the present embodiment, the ion implantation apparatus 10 determines the beam characteristics of the large-area, high-current ribbon beam 12 in the ion source 18 so as to match the desired implantation conditions and in-line substrate scanning. Then, the substrate S is irradiated with the ribbon beam 12. In this way, the ion implantation apparatus 10 can achieve high productivity at a low cost.

  Moreover, according to this embodiment, in addition to the above typical effects, various effects described below can also be achieved.

  The ion source is a bucket type ion source that can generate high-density plasma by using inductive discharge by RF. In addition to or in addition thereto, the beam extraction system is constituted by an extraction slit system having a large area and a wide beam extraction opening. Therefore, a ribbon beam with a high implantation dopant current can be extracted. Furthermore, this large area ribbon beam is directly injected into the substrate without mass analysis. Therefore, high productivity can be realized.

  In addition, such a high current ribbon beam is incorporated in an in-line production line. In the implantation process, a beam is always irradiated to a large-area implantation part. An array of a large number of battery substrates continuously moves below the beam in one direction at a constant speed. In this way, a desired dopant dose is implanted. High productivity is realized by continuous processing of a large number of substrates. Moreover, since these substrates are moved in one direction in-line, they are transported to the next process while maintaining a vacuum. Shortening the transfer time between processes also helps to improve productivity.

  In an in-line production line, it is important to process a substrate at a constant speed. Therefore, when processing a substrate of a recipe with a different dose immediately after processing the substrate with a certain dose, it is desirable to appropriately adjust the implantation dopant current before starting the processing of the latter substrate. It is. According to the present embodiment, by changing the extraction voltage by changing the extraction voltage, the implantation dopant current can be changed without changing the implantation energy. Since the extraction voltage can be changed at high speed, the implantation dopant current can be adjusted quickly. Therefore, substrates of various recipes can be processed continuously while keeping the processing speed of the line high. In this way, smooth in-line substrate processing can be realized without disturbing the processing speed of the line.

  In a conventional impurity introducing device for a solar battery cell, a hot cathode ion source employed in a semiconductor ion implantation device may be used. In that case, since the beam is extracted from the single hole, a sufficient beam extraction current cannot be obtained, and thus a large injection beam current cannot be obtained. Since the injection depth required for the solar cell is shallow (ie, the injection energy is low), the extraction current at the extraction voltage corresponding to this injection energy is also low, and thus the injection beam current is also reduced. If the mass analysis is performed, the beam current is further reduced. However, according to the present embodiment, the extraction beam current amount can be increased by adopting a bucket source and providing a long extraction opening. Thereby, the injection beam current is increased, the injection time is shortened, and high productivity is achieved.

Since the RF plasma excitation ion source is operated at a lower temperature than the hot cathode ion source, the temperature of the plasma generation chamber can be kept low. Therefore, PH ₃ or B ₂ H ₆ that easily decomposes at high temperatures (these gases decompose into H and dopant atoms at about 300 ° C.) can be used as the source gas. By adjusting the plasma control conditions, the ratio of dimer ions and monomer ions can be freely changed. Preferably, monomer ions such as PH _x ⁺ and BH _x ⁺ can be suppressed, and plasma that predominantly contains dimer ions such as P ₂ H _x ⁺ and B ₂ H _x ⁺ can be generated. Thus, since the dopant implantation beam current can be greatly increased with respect to the actual implantation current, the implantation time is shortened and high productivity is achieved.

Since the conventional semiconductor injection apparatus has a mass analyzer and a long beam line, the loss in the beam transport system is large. Therefore, the injection beam current is reduced. However, according to this embodiment, PH ₃ and B ₂ H ₆ diluted with H ₂ may be used as the dopant gas, and the extraction beam may be injected while containing H _x ⁺ without mass separation. Can be shortened to about 1/10. Thus, the injection beam current can be greatly increased, the injection time is shortened, and high productivity is achieved.

  Some conventional devices can process only two rows of substrates simultaneously. However, according to the present embodiment, since a long ribbon beam drawing is realized, four or more rows of solar cell substrates can be arranged and simultaneously irradiated with the ribbon beam to be conveyed and injected at a constant speed. Therefore, productivity can be improved more than twice the conventional method.

  Unlike conventional stand-alone devices, according to this embodiment, buffer chambers are provided before and after the injection process chamber. Furthermore, a load lock chamber is provided if necessary. In this way, an in-line apparatus can be realized by carrying and injecting at a constant speed in one direction at the time of injection.

  Ion implantation can be applied at an acceptable production cost in the production of solar cell substrates. Existing techniques such as phosphorus thermal diffusion for pn junction and selective emitter fabrication, boron thermal diffusion in BSF, and the like can be replaced by ion implantation. Since the ion dose and the diffusion depth can be accurately controlled by ion implantation, the performance (for example, conversion efficiency) of the solar cell can be improved.

  In the solar cell, it is preferable in terms of performance that the implantation profile of impurities such as phosphorus and boron decreases monotonously in the depth direction. In the case where there is a peak in the depth direction, the impurity concentration is high at the depth position, and therefore, it becomes an electron movement barrier. Therefore, the conversion efficiency of the solar battery cell is reduced. In order to improve the profile having a peak to a monotonically decreasing profile, the existing method requires multiple injection processes with different injection energies. When only monomer ions are implanted through mass separation, a profile having a peak tends to be formed as shown in FIG. However, according to the present embodiment, dimer ions can be implanted into the substrate. Thereby, a monotonically decreasing injection profile can be obtained with a single injection scan. Therefore, productivity can be improved along with improvement of cell conversion efficiency.

By using PH ₃ and B ₂ H ₆ diluted with H ₂ as a source gas, a large amount of H _x ⁺ is contained in the implantation beam, and these are implanted simultaneously with a desired ion species. This hydrogen implantation has a hydrogen passivation effect on the bulk of the substrate and the film interface.

  In the above, this invention was demonstrated based on the Example. It will be understood by those skilled in the art that the present invention is not limited to the above-described embodiment, and various design changes are possible, various modifications are possible, and such modifications are within the scope of the present invention. By the way.

  In the above-described embodiment, an RF plasma excitation type long ion source including one or a plurality of RF antennas is used, but the present invention is not limited to this. In some embodiments, the ion source 18 may be an ECR plasma excited ion source with an elongated ECR plasma chamber. In an embodiment, the ion source 18 may be a filament type DC discharge type or an indirectly heated filament cathode type ion source including one or more elongated heating cathodes.

  In the above-described embodiment, the substrate S is transported in one direction and one ion implantation process is completed by one scan. However, the present invention is not limited to this. In some embodiments, the substrate S may reciprocate in the process chamber 26 or the central chamber 16 such that the substrate S is scanned multiple times by the ribbon beam 12. In this way, a high dose implantation process may be possible.

In certain embodiments, an ion implanter may be used to obliquely implant Ar ions into a substrate (eg, an LCD substrate). In this case, the ion source is placed at an angle with respect to the substrate for oblique implantation. Thus, a rubbing effect can be given to the substrate. Alternatively, in an embodiment, the ion implantation apparatus may be used as an implantation apparatus for forming a CuSiN film by simultaneous high dose implantation of Si ⁺ and N ⁺ for improving the Cu wiring reliability of a semiconductor element.

  Hereinafter, some embodiments of the present invention will be given.

An ion implantation apparatus according to an embodiment includes:
An ion source comprising: a plasma chamber; a plasma source for generating plasma in the plasma chamber; and an extraction electrode system for extracting an ion beam having a long beam cross section from the plasma chamber;
A processing chamber that is provided adjacent to the ion source and receives the ion beam from the extraction electrode system, and includes a substrate moving mechanism for moving the substrate along a substrate moving path passing through the ion beam irradiation region. Room,
A controller for controlling ion beam generation conditions of the ion source,
The ion beam has a beam current determined according to the ion beam generation condition, and the ion beam is directly held from the extraction electrode system on the substrate moving the ion beam irradiation region while holding the beam current. Irradiated.

  The ion beam generation conditions may include extraction conditions for the extraction electrode system and / or plasma control conditions for the plasma source. The ion beam generation condition may include an extraction voltage of the extraction electrode system.

  The controller may adjust the beam current by controlling the ion beam generation conditions based on a given implantation dose to the substrate and a given substrate moving speed. The substrate moving mechanism may move the substrate at a substantially constant speed.

  The controller may control the ion composition of the ion beam by changing a plasma control condition of the plasma source.

The plasma source includes a gas supply source for supplying a source gas containing PH ₃ , B ₂ H ₆ , or H ₂ to the plasma chamber, a high-frequency plasma excitation source for generating plasma from the source gas, May be provided.

  The plasma chamber may have a plurality of long outlet openings adjacent to each other, and each long outlet opening may be formed along a direction perpendicular to the movement path. The extraction electrode system may have a plurality of slits corresponding to the plurality of long outlet openings, and each slit may be provided to extract an ion beam having the long beam cross section. The width of the ion beam irradiation region in the direction along the movement path may be wider than the width in the direction of the long beam cross section.

  The plasma source may be configured to generate a plasma in the plasma chamber that includes monomer ions and dimer ions of ionic species to be implanted into the substrate. The extraction electrode system may be configured to extract an ion beam including monomer ions and dimer ions from the plasma chamber. The ion beam irradiation region may be allowed to receive both monomer ions and dimer ions.

  An ion implantation method or ion implantation apparatus according to an embodiment is related to a continuous long ribbon beam ion implantation apparatus. The apparatus is configured to generate a long plasma in a long plasma chamber of an ion source. This apparatus is configured to extract a long and uniform ribbon-like ion beam from a long plasma by a beam extraction electrode system from a source opening. The apparatus is configured to irradiate a substrate or group of substrates that are continuously moving with the extracted ribbon-like ion beam. The method or apparatus enables control of the beam current and / or dopant implantation profile of the dopant implantation beam by changing either or both of the plasma control conditions of the ion source and the ion beam control conditions of the beam extraction electrode system. . The method or apparatus may be able to control the beam current and / or dopant implantation profile of the dopant implantation beam by changing the plasma control conditions and / or ion beam control conditions of the ion source and beam extraction electrode system.

  In some embodiments, the beam current of the dopant implantation beam may be controllable by changing the ion beam control conditions of the ion source. In some embodiments, the dopant implantation profile may be controllable by changing the plasma control conditions of the ion source. In some embodiments, the beam current and dopant implantation profile of the dopant implantation beam may be simultaneously controlled by simultaneously changing the beam control conditions and the plasma control conditions of the ion source. In an embodiment, the plasma generation conditions may be changed so that the plasma generation control conditions (monomer, dimer ratio, etc.) of the ion source are not changed.

  DESCRIPTION OF SYMBOLS 10 Ion implantation apparatus, 12 Ribbon beam, 14 Ion beam area | region, 18 Ion source, 20 Plasma chamber, 21 Plasma, 22 Plasma source, 24 Extraction electrode system, 26 Process chamber, 32 Control part, 36 Gas supply source, 40 RF antenna , 50 outlet opening, 56 extraction electrode, 120 transport control device, A substrate movement path, S substrate, Vex extraction voltage, Vs substrate scanning speed.

Claims (12)

An ion source comprising: a plasma chamber; a plasma source for generating plasma in the plasma chamber; and an extraction electrode system for extracting an ion beam having a long beam cross section from the plasma chamber;
A processing chamber that is provided adjacent to the ion source and receives the ion beam from the extraction electrode system, and includes a substrate moving mechanism for moving the substrate along a substrate moving path passing through the ion beam irradiation region. Room,
A controller for controlling ion beam generation conditions of the ion source,
The ion beam has a beam current determined according to the ion beam generation condition, and the ion beam is directly held from the extraction electrode system on the substrate moving the ion beam irradiation region while holding the beam current. An ion implantation apparatus characterized by being irradiated.   The ion implantation apparatus according to claim 1, wherein the ion beam generation condition includes an extraction condition of the extraction electrode system and / or a plasma control condition of the plasma source.   The ion implantation apparatus according to claim 1, wherein the ion beam generating condition includes an extraction voltage of the extraction electrode system.   The control unit adjusts the beam current by controlling the ion beam generation condition based on a given implantation dose to the substrate and a given substrate moving speed. 4. The ion implantation apparatus according to any one of 3.   The ion implantation apparatus according to claim 1, wherein the substrate moving mechanism moves the substrate at a substantially constant speed.   6. The ion implantation apparatus according to claim 1, wherein the control unit controls an ion composition of the ion beam by changing a plasma control condition of the plasma source. The plasma source includes a gas supply source for supplying a source gas containing PH ₃ , B ₂ H ₆ , or H ₂ to the plasma chamber, a high-frequency plasma excitation source for generating plasma from the source gas, The ion implantation apparatus according to claim 1, comprising: The plasma chamber has a plurality of elongated outlet openings adjacent to each other, and each elongated outlet opening is formed along a direction perpendicular to the movement path,
The extraction electrode system has a plurality of slits corresponding to the plurality of long outlet openings, each slit is provided for extracting an ion beam having the long beam cross section,
8. The ion implantation apparatus according to claim 1, wherein a width of the ion beam irradiation region in a direction along the moving path is wider than a width in the direction of the long beam cross section. The plasma source is configured to generate a plasma in the plasma chamber that includes monomer ions and dimer ions of ionic species to be implanted into the substrate,
The extraction electrode system is configured to extract an ion beam including monomer ions and dimer ions from the plasma chamber,
The ion implantation apparatus according to claim 1, wherein the ion beam irradiation region is allowed to receive both monomer ions and dimer ions. Controlling the ion beam generation conditions of the ion source;
Extracting an ion beam through an extraction electrode system of the ion source;
Receiving the ion beam from the ion source into a processing chamber;
Moving the substrate through the ion beam irradiation region of the processing chamber, and
The ion beam has a beam current determined according to the ion beam generation condition, and the ion beam is directly held from the extraction electrode system on the substrate moving the ion beam irradiation region while holding the beam current. An ion implantation method characterized by irradiation. An ion source comprising an extraction electrode system for extracting an ion beam;
A processing chamber for receiving the ion beam from the ion source, the processing chamber configured to pass the ion beam irradiation region through the substrate, and
The ion beam has a characteristic that is determined according to ion beam generation conditions of the ion source, and the characteristic from the extraction electrode system to the ion beam irradiation area while the substrate passes through the ion beam irradiation area. The ion implantation apparatus is characterized by directly irradiating the moving substrate in the ion beam irradiation region. Extracting the ion beam through the extraction electrode system of the ion source;
Receiving the ion beam from the ion source into a processing chamber;
Passing an ion beam irradiation region of the processing chamber through a substrate, and
The ion beam has a characteristic that is determined according to ion beam generation conditions of the ion source, and the characteristic from the extraction electrode system to the ion beam irradiation area while the substrate passes through the ion beam irradiation area. The ion implantation method is characterized in that the moving substrate is directly irradiated with the ion beam irradiation region while holding the ion beam.