TW201415603A - Connecting substrate and package on package structure - Google Patents

Abstract

A connecting substrate includes an insulating base, a plurality of conductive pillars and a thermal conducting frame. The insulating base includes a first surface and an opposite second surface. Pluralities of through holes are defined in the insulating base. Each conductive pillar is received in a through hole. A receiving cavity is defined in the insulating base. The thermal conducting frame is received in the receiving cavity. The present disclosure also relates to package on package structure including the connecting substrate.

Description

Connecting substrate and laminated package structure

The present invention relates to a semiconductor package technology, and more particularly to a connection substrate and a package-on-package (POP) structure.

As the size of semiconductor devices continues to decrease, laminated package structures having semiconductor devices are also receiving increasing attention. The package structure is generally made by a laminate manufacturing method. In the conventional laminate fabrication method, in order to achieve high-density integration and small-area mounting, the upper and lower package devices are usually electrically connected by solder balls having a diameter of 200 μm to 300 μm. However, a solder ball having a diameter of 200 μm to 300 μm is not only bulky, but also easily breaks between the solder ball and the electrical contact pad to which it is connected, so that not only the pad corresponding to the solder ball on the lower package device is made. The area is also large, which makes it difficult to reduce the volume of the package structure and reduce the yield and reliability of the package structure. The lower package device is packaged between the upper and lower circuit carriers, and the heat generated by the package is not easily dissipated, and the heat dissipation of the lower package device is poor, which affects the service life of the entire package package structure.

In view of the above, it is necessary to provide a connection substrate and a laminated package structure which are highly reliable and have good heat dissipation properties.

A connection substrate includes an insulating substrate, a plurality of conductive pillars, and a thermally conductive metal frame. The insulating substrate has opposite first and second surfaces, and a plurality of through holes penetrating the first surface and the second surface are formed in the insulating substrate, and the plurality of conductive columns are one by one Correspondingly, it is accommodated in the plurality of through holes, and a receiving groove is formed in the insulating substrate from the second surface of the insulating base material, and the heat conductive metal frame is fitted and received in the receiving groove.

A stacked package structure comprising a first package substrate, a first wafer packaged on the first package substrate, a second package substrate, a second wafer packaged on the second package substrate, a first solder material, a second solder material, and a The first package substrate is disposed on a side of the second surface of the connection substrate, and the surface of the first package substrate that is in contact with the connection substrate has a plurality of third electrical contact pads and a plurality of a fourth electrical contact pad, the first wafer is electrically connected to the first package substrate through a plurality of third electrical contact pads, and one end of each of the conductive posts is electrically connected to a corresponding third through the first solder material The pads are electrically connected to each other, the first chip is received in a thermally conductive metal frame of the connection substrate, the second package substrate is disposed on a side of the first surface of the connection substrate, and the second package substrate has a plurality of The seventh electrical contact pads corresponding to the conductive columns are one-to-one, and the other end of each of the conductive posts is electrically connected to the corresponding seventh electrical contact pad through the second solder material.

The connection substrate provided by the technical solution has a heat conductive metal frame formed therein for accommodating the wafer and rapidly transferring heat generated by the wafer. According to the technical solution of the present invention, since the first wafer is housed in the heat conductive metal frame of the connection substrate, heat generated by the first wafer can be quickly conducted from the first wafer, so that the first wafer does not be used during use. The temperature is too high to increase the life of the first wafer.

The connection substrate and the package structure provided by the present technical solution will be further described in detail below with reference to the accompanying drawings and embodiments.

Referring to FIG. 1 and FIG. 2 , the first embodiment of the present invention provides a connection substrate 100 . The connection substrate 100 includes an insulating substrate 110 , a plurality of conductive pillars 120 , and a heat conductive metal frame 130 .

The insulating substrate 110 has opposing first and second surfaces 111, 112. A plurality of mutually separated through holes 113 penetrating the first surface 111 and the second surface 112 are formed in the insulating substrate 110. A receiving groove 114 is further formed from the second surface 112 to the insulating base material 110. In this embodiment, the receiving space formed by the receiving slot 114 is a rectangular parallelepiped shape, and the receiving slot 114 is for receiving an electronic device. The receiving slot 114 has a bottom wall 1141 and four four side walls 1142 that are vertically connected to the bottom wall 1141. The bottom wall 1141 is parallel to the second surface 112, and the four side walls 1142 are coupled between the bottom wall 1141 and the second surface 112. The shape of the receiving groove 114 can be set according to the shape of the electronic device that needs to be accommodated. A plurality of through holes 113 are disposed around the receiving groove 114 and do not communicate with the receiving groove 114 .

A plurality of conductive pillars 120 are formed in the plurality of through holes 113 in a one-to-one correspondence. Each of the conductive pillars 120 has an opposite first end surface 121 and a second end surface 122. In this embodiment, each of the conductive pillars 120 has a length equal to the thickness of the insulating substrate 110. The first end surface 121 is flush with the first surface 111. The second end surface 122 is flush with the second surface 112.

The heat conductive metal frame 130 is received in the receiving groove 114. The shape of the periphery of the heat conductive metal frame 130 corresponds to the shape of the receiving groove 114. In this embodiment, the heat conductive metal frame 130 includes a top plate 131 and four side plates 132 perpendicularly connected to the top plate 131. The top plate 131 is in contact with the bottom wall 1141 of the receiving groove 114, and the four side plates 132 are in contact with the four side walls 1142 of the receiving groove 114 in one-to-one correspondence. In this embodiment, each side plate 132 has a bottom surface 1321 away from the top plate 131. The bottom surface 1321 is flush with the second surface 112. The heat conductive metal frame 130 is made of a heat conductive metal such as copper, aluminum, and silver. Preferably, the material of the heat conductive metal frame 130 is the same as that of the conductive pillar 120, and is made of metal copper.

Referring to FIG. 3 to FIG. 5 , the connection substrate 100 may further include a plurality of first electrical contact pads 150 and/or a plurality of second electrical contact pads 160 .

Referring to FIG. 3, the connection substrate 100a includes a plurality of first electrical contact pads 150. Each of the first electrical contact pads 150 is electrically connected to a conductive post 120. The first electrical contact pad 150 is formed on the first surface 111. Preferably, each of the first electrical contact pads 150 is integrally formed with the conductive pillars 120 electrically connected to each other.

Referring to FIG. 4, the connection substrate 100b includes a plurality of second electrical contact pads 160. Each of the second electrical contact pads 160 is electrically connected to a conductive post 120. A second electrical contact pad 160 is formed on the second surface 112. Preferably, each of the second electrical contact pads 160 is integrally formed with the conductive pillars 120 electrically connected to each other.

Referring to FIG. 5 , the connection substrate 100 c includes a plurality of first electrical contact pads 150 and a plurality of second electrical contact pads 160 . Each of the first electrical contact pads 150 is electrically connected to a conductive post 120. The first electrical contact pad 150 is formed on the first surface 111. Each of the second electrical contact pads 160 is electrically connected to a conductive post 120. A second electrical contact pad 160 is formed on the second surface 112. Referring to FIG. 6, the second embodiment of the present invention provides a connection substrate 200. The structure of the connection substrate 200 is similar to that of the connection substrate 100 provided by the first embodiment. The connection substrate 200 includes an insulating substrate 210, a plurality of conductive pillars 220, a plurality of conductive blind vias 250, and a thermally conductive metal frame 230.

The insulating substrate 210 has opposing first and second surfaces 211, 212. A plurality of through holes 213 penetrating the first surface 211 and the second surface 212 and separated from each other are formed in the insulating substrate 210. In this embodiment, from the first surface 211 to the second surface 212, each of the through holes 213 includes a first hole segment 2131 and a second hole segment 2132 that are connected to each other. The first hole segment 2131 is a tapered hole, and the second hole segment 2132 is a straight hole. That is, the longitudinal section of the first hole section 2131 is trapezoidal, and the shape of the longitudinal section of the second hole section 2132 is a rectangle. A receiving groove 214 is further formed from the second surface 212 toward the insulating base material 210. In this embodiment, the receiving space formed by the receiving groove 214 is a rectangular parallelepiped shape, and the receiving groove 214 is for receiving an electronic device. A plurality of through holes 213 are disposed around the receiving groove 214 and do not communicate with the receiving groove 214 .

A plurality of conductive pillars 220 and a plurality of conductive blind vias 250 are formed in the plurality of through vias 213 in a one-to-one correspondence. The shape of each of the conductive pillars 220 corresponds to the shape of the second hole segment 2132, and the shape of each of the conductive blind holes 250 corresponds to the shape of the first hole segment 2131. Each of the conductive blind vias 250 is electrically connected to the corresponding conductive pillars 220. Each of the conductive vias 250 is in the shape of a truncated cone, and is correspondingly received in the first hole segment 2131 of the through hole 213 . Each of the conductive posts 220 is correspondingly received in the second hole segment 2132 of the through hole 213 . Each of the conductive pillars 220 has a second end surface 222 away from the corresponding conductive blind hole 250, and each of the conductive blind holes 250 has a first end surface 251 away from the corresponding conductive pillar 220. In this embodiment, the sum of the height of each of the conductive pillars 120 and the thickness of the corresponding conductive blind vias 250 is equal to the thickness of the insulating substrate 110. The first end surface 251 is flush with the first surface 211. The second end surface 222 is flush with the second surface 212.

The heat conductive metal frame 230 is received in the receiving groove 214. The shape of the periphery of the heat conductive metal frame 230 corresponds to the shape of the receiving groove 214. The heat conductive metal frame 230 is made of a heat conductive metal such as copper, aluminum, and silver. Preferably, the material of the thermally conductive metal frame 230 is the same as that of the conductive post 220, and is made of metallic copper.

It can be understood that the connection substrate 200a shown in FIG. 7 can include a plurality of first electrical contact pads 260. Each of the first electrical contact pads 260 is electrically connected to a conductive via 250. The first electrical contact pad 260 is formed on the first surface 211. Preferably, each of the first electrical contact pads 260 is integrally formed with the conductive blind holes 250 electrically connected to each other. Referring to FIG. 8 , the connection substrate 200 b further includes a plurality of second electrical contact pads 270 . Each of the second electrical contact pads 270 is electrically connected to a conductive post 220. A second electrical contact pad 270 is formed on the second surface 212.

Referring to FIG. 9 , a third embodiment of the present invention provides a connection substrate 300. The structure of the connection substrate 300 is similar to that of the connection substrate 100 provided by the first embodiment. The connection substrate 300 includes an insulating substrate 310 and a plurality of conductive pillars. 320, a thermally conductive metal frame 330 and a thermally conductive connector 340.

The structures of the insulating substrate 310, the conductive pillars 320, and the heat conductive metal frame 330 are the same as those of the connection substrate 100 provided in the first embodiment.

The thermally conductive connector 340 is disposed in the insulative substrate 310, and the thermally conductive connector 340 is coupled between the thermally conductive metal frame 330 and the portion of the conductive post 320. It is used to transfer the heat of the heat conductive metal frame 330 to the conductive pillars 320 connected thereto to facilitate the heat dissipation. It can be understood that one or both ends of the conductive pillar 320 of the connection substrate 300 of the embodiment may also form an electrical contact pad. Referring to FIG. 10, the first electrical contact pads 350 and the second electrical contact pads 360 are respectively formed at two ends of the conductive pillars 320 of the connection substrate 300a.

Referring to FIG. 11 , a fourth embodiment of the present invention provides a connection substrate 400. The structure of the connection substrate 400 is similar to that of the connection substrate 200 provided by the second embodiment. The connection substrate 400 includes an insulating substrate 410 and a plurality of conductive pillars. 420. A plurality of conductive blind vias 450, a thermally conductive metal frame 430, and a thermally conductive connector 440.

The structure of the insulating substrate 410, the conductive pillars 420, the conductive blind vias 450, and the thermally conductive metal frame 430 is the same as that of the connection substrate 200 provided in the second embodiment.

The thermally conductive connector 440 is disposed within the insulative substrate 410, and the thermally conductive connector 440 is coupled between the thermally conductive metal frame 430 and the portion of the conductive post 420. It is used to transfer the heat of the heat conductive metal frame 430 to the conductive pillars 420 connected thereto to facilitate the heat dissipation.

It can be understood that one end of the conductive pillar 420 of the connection substrate 400 of the present embodiment forms a second electrical contact pad 470, and one end of the conductive blind via 450 forms a first electrical contact pad 460.

Referring to FIG. 12 , a fifth embodiment of the present invention provides a connection substrate 500. The structure of the connection substrate 500 is similar to that of the connection substrate 100 provided by the first embodiment. The connection substrate 500 includes an insulating substrate 510 and a plurality of conductive columns. 520 and a thermally conductive metal frame 530.

The insulating substrate 510 has opposing first and second surfaces 511, 512. A plurality of mutually spaced through holes 513 penetrating the first surface 511 and the second surface 512 are formed in the insulating substrate 510. A receiving groove 514 is further formed from the second surface 512 toward the insulating base material 510. The receiving slot 514 is for receiving an electronic device. The receiving groove 514 has a bottom wall 5141 and four four side walls 5142 vertically connected to the bottom wall 5141. The bottom wall 5141 is parallel to the second surface 512, and the four side walls 5142 are connected between the bottom wall 5141 and the second surface 512. The shape of the receiving groove 514 can be set according to the shape of the electronic device that needs to be accommodated. A plurality of through holes 513 are disposed around the receiving groove 514 and do not communicate with the receiving groove 514.

A plurality of conductive pillars 520 are formed in the plurality of through holes 513 in a one-to-one correspondence. Each of the conductive pillars 520 has an opposite first end surface 521 and a second end surface 522. In this embodiment, each of the conductive pillars 520 has a length greater than a thickness of the insulating substrate 110. The first end surface 521 is flush with the first surface 511. The second end surface 522 protrudes from the second surface 512.

The heat conductive metal frame 530 is received in the receiving groove 514. The shape of the periphery of the heat conductive metal frame 530 corresponds to the shape of the receiving groove 514. In this embodiment, the heat conductive metal frame 530 includes a top plate 531 and four side plates 532 perpendicularly connected to the top plate 531. The top plate 531 is in contact with the bottom wall 5141 of the receiving groove 514, and the four side plates 532 are in contact with the four side walls 5142 of the receiving groove 514 in one-to-one correspondence. In this embodiment, each side plate 532 has a bottom surface 5321 away from the top plate 531. The bottom surface 5321 also protrudes from the second surface 512. The heat conductive metal frame 530 is made of a heat conductive metal such as copper, aluminum, and silver. Preferably, the material of the thermally conductive metal frame 530 is the same as that of the conductive post 520, and is made of metallic copper.

It can be understood that, referring to FIG. 13 , the first end surface 521 of the conductive pillar 520 of the connection substrate 500 a of the present embodiment may form a first electrical contact pad 550 . Moreover, the connection substrate 500 may also be formed with a heat conductive connection 540 to connect the heat conductive metal frame 530 and the partial conductive pillars 520.

Referring to FIG. 14 , a sixth embodiment of the present invention provides a connection substrate 600. The structure of the connection substrate 600 is similar to that of the connection substrate 400 provided by the second embodiment. The connection substrate 600 includes an insulating substrate 610 and a plurality of conductive pillars. 620. A plurality of conductive blind vias 650, a thermally conductive metal frame 630, and a thermally conductive connector 640. The difference is that the second end surface 622 of the conductive pillar 620 and the bottom surface 6321 of the heat conductive metal frame 630 protrude from the second surface 612.

It can be understood that the end surface of the conductive blind via 650 of the connection substrate 600 exposed from the first surface 611 of the present embodiment may form the first electrical contact pad 660.

It is to be understood that the connection substrates provided in the first to sixth embodiments of the present technical solution may each include a solder resist layer formed on the first surface of the insulating substrate, and the solder resist layer is formed in the solder resist layer. The openings are such that the first electrical contact pads are exposed from the corresponding openings.

Referring to FIG. 15 , a seventh embodiment of the present invention provides a package structure 10 including a first package substrate 20 , a first wafer 30 packaged on the first package substrate 20 , a second package substrate 40 , and a second package . The second wafer 50 of the package substrate 40, the first solder material 60, the second solder material 70, and any one of the connection substrates provided by the first to sixth embodiments of the present technical solutions. In this embodiment, the connection substrate 100c shown in FIG. 5 according to the first embodiment of the present technical solution is taken as an example for description.

The first package substrate 20 includes a first base layer 21, first conductive trace patterns 22 and second conductive trace patterns 23 respectively disposed on opposite surfaces of the first base layer 21, and respectively formed on the first conductive traces The first solder resist layer 24 and the second solder resist layer 25 and the plurality of solder balls 26 on the pattern 22 and the second conductive line pattern 23.

The first substrate layer 21 is a multi-layer substrate comprising a plurality of layer resin layers and a plurality of layer conductive line patterns (not shown) alternately arranged. The first substrate layer 21 includes an opposite third surface 2110 and a fourth surface 2120. The first conductive trace pattern 22 is disposed on the third surface 2110 of the first substrate layer 21, and the second conductive trace pattern 23 is disposed on The fourth surface 2120 of the first substrate layer 21 is on the surface. The plurality of layer conductive line patterns of the first base layer 21 and the plurality of layer conductive line patterns of the first base layer 21 and the first conductive line pattern 22 and the second conductive line pattern 23 respectively pass through the conductive holes (Fig. Not shown) Electrical connection.

The first solder resist layer 24 covers a portion of the first conductive trace pattern 22 and the third surface 2110 exposed from the first conductive trace pattern 22 to expose a portion of the first conductive trace pattern 22 from the first solder resist layer 24. A plurality of third electrical contact pads 2210 and a plurality of fourth electrical contact pads 2220 are formed. The third electrical contact pads 2210 are arranged in an array, the plurality of fourth electrical contact pads 2220 are disposed around the plurality of third electrical contact pads 2210, and the plurality of fourth electrical contact pads 2220 are disposed on the A plurality of third electrical contact pads 2210 are circumferentially.

The second solder resist layer 25 covers a portion of the second conductive trace pattern 23 and the fourth surface 2120 exposed from the second conductive trace pattern 23, so that a portion of the second conductive trace pattern 23 is exposed from the second solder resist layer 25. A plurality of fifth electrical contact pads 2310 are formed, and the fifth electrical contact pads 2310 are arranged in an array. The plurality of third electrical contact pads 2210 and the plurality of fourth electrical contact pads 2220 pass through the first conductive line pattern 22, the conductive lines of the second conductive line pattern 23, and the conductive line patterns and conductive lines in the first base layer 21. The holes are electrically connected to the plurality of fifth electrical contact pads 2310.

A plurality of solder balls 26 are formed one by one on the plurality of fifth electrical contact pads 2310.

The first wafer 30 is encapsulated on one side of the first solder resist layer 24 of the first package substrate 20. In this embodiment, the first wafer 30 is bonded to the surface of the first solder resist layer 24 of the first package substrate 20 through the first encapsulant 32. The first encapsulant 32 is made of a high heat dissipation adhesive material, which may be a thermal adhesive. The first wafer 30 is mounted on the first package substrate 20 by a flip chip packaging technology. The first wafer 30 has a plurality of electrical connection pads (not shown) corresponding to the third electrical contact pads 2210. The third electrical contact pads 2210 and the corresponding electrical connection pads pass through the conductive blind holes 31. Electrically connected to each other. It can be understood that the conductive blind hole 31 may be a solder ball or a copper paste, or a metal conductive pillar and a solder ball may be combined with each other, or a copper paste and a copper conductive blind hole may be combined with each other.

The second electrical contact pads 160 of the connection substrate 100c are in one-to-one correspondence with the fourth electrical contact pads 2220 of the first package substrate 20. A second electrical contact pad 160 and a fourth electrical contact pad 2220 corresponding to each other are electrically connected to each other by the first solder material 60. The first wafer 30 is housed in the thermally conductive metal frame 130. In order to improve the thermal conduction efficiency, a second package film 33 is further formed between the thermally conductive metal frame 130 and the first wafer 30. The second package film 33 is also made of a high heat dissipation adhesive material, which may be a thermal conductive adhesive.

The second package substrate 40 is formed on a side of the connection substrate 100 away from the first package substrate 20 . The second package substrate 40 includes a third conductive layer pattern 43 and a fourth conductive line pattern 44 respectively disposed on two opposite surfaces of the second substrate layer 42 and respectively formed on the third conductive layer The third solder resist layer 45 and the fourth solder resist layer 46 on the line pattern 43 and the fourth conductive line pattern 44.

The second substrate layer 42 includes an opposite fifth surface 421 and a sixth surface 422. The third conductive trace pattern 43 is disposed on the fifth surface 421 of the second substrate layer 42. The fourth conductive trace pattern 44 is disposed on the second conductive trace pattern 43. The sixth surface 422 of the second substrate layer 42 is on. The third conductive line pattern 43 and the fourth conductive line pattern 44 are electrically conducted through the plurality of conductive holes 47.

The third solder resist layer 45 covers a portion of the third conductive trace pattern 43 and the fifth surface 421 exposed from the third conductive trace pattern 43 to expose a portion of the third conductive trace pattern 43 from the third solder resist layer 45. A plurality of sixth electrical contact pads 431 are formed. The surface of the third solder resist layer 45 has a wafer holding area for fixing the wafer thereon. The plurality of sixth electrical contact pads 431 are disposed around the wafer holding area.

The fourth solder resist layer 46 covers a portion of the fourth conductive trace pattern 44 and the sixth surface 422 of the second base layer 42 exposed from the fourth conductive trace pattern 44, such that the portion of the fourth conductive trace pattern 44 is from the first The four solder resist layers 46 are exposed to form a plurality of seventh electrical contact pads 441 , and the plurality of seventh electrical contact pads 441 are in one-to-one correspondence with the plurality of first electrical contact pads 150 . The plurality of sixth electrical contact pads 431 are electrically connected to the plurality of seventh electrical contact pads 441 through the conductive lines of the third conductive trace pattern 43 and the fourth conductive trace pattern 44 and the conductive vias 47. The seventh electrical contact pad 441 is in one-to-one correspondence with the plurality of first electrical contact pads 150 , and each of the first electrical contact pads 150 and the corresponding seventh electrical contact pads 441 are electrically connected to each other through the second solder material 70 .

The third conductive line pattern 43 and the fourth conductive line pattern 44 may be formed by selectively etching a copper layer. In this embodiment, the second package substrate 40 is a double-sided circuit board. Of course, the second package substrate 40 may also be a multi-layer board having more than two layers of conductive line patterns, that is, the second base layer 42 may be a multi-layer substrate. The multilayer resin layer and the multilayer conductive wiring pattern are alternately arranged.

The second wafer 50 is encapsulated on the surface of the third solder resist layer 45 of the second package substrate 40. In this embodiment, the second wafer 50 is a wire bonding (WB) wafer, and the second wafer 50 is electrically connected to the sixth electrical contact pad 431. Specifically, the second wafer 50 has a plurality of bonding contacts and a plurality of strip bonding wires 501 extending from the plurality of bonding contacts, and the bonding wires 501 are in one-to-one correspondence with the sixth electrical contact pads 431. One end of the plurality of strip bonding wires 501 is electrically connected to the second wafer 50, and the other end is electrically connected to the plurality of sixth electrical contact pads 431, respectively, so that the second wafer 50 is electrically connected to the third conductive line pattern 43. .

Preferably, the second wafer 50 is fixed to the wafer fixing area on the surface of the third solder resist layer 45 by an adhesive layer, and the bonding wire 501 can be connected to the sixth electrical contact pad 431 by soldering. The material of the bonding wire 501 is generally gold. In this embodiment, the surface of the third solder resist 45 and the sixth electrical contact pad 431 exposed by the bonding wires 501, the second wafer 50 and the second package substrate 40 are encapsulated by the third encapsulant 502. The bonding wires 501 and the second wafer 50 are completely covered in the third encapsulant 502. In this embodiment, the third encapsulant 502 is a black plastic. Of course, the third encapsulant 502 can also be a other encapsulating colloidal material, which is not limited to the embodiment.

It can be understood that when the cross-sectional area of the connection substrate 100c and the second package substrate 40 is smaller than the cross-sectional area of the first package substrate 20, the third encapsulant 502 may be formed on the sides of the connection substrate 100c and the second package substrate 40, Thereby, the connection substrate 100c and the second package substrate 40 are also covered by the third encapsulant 502.

In the laminated package structure 10 provided by the present technical solution, since the first wafer 30 is received in the heat conductive metal frame 130 of the connection substrate 100c, the heat generated by the first wafer 30 during the operation can be quickly transferred to the heat conductive metal frame 130 and transmitted. The insulating substrate 110 to the connection substrate 100c allows heat to be quickly diffused out of the package structure 10, so that the conduction rate of heat generated by the first wafer 30 can be increased.

It can be understood that, as shown in FIG. 16 , the laminated package structure provided by the present technical solution can also adopt the connection substrate provided by the third embodiment of the present technical solution, that is, the thermal conductive connection body 140 is formed between the thermal conductive metal frame 130 and the partial conductive pillars 120 . Therefore, the heat generated by the first wafer 30 can be transferred to the conductive pillars 120 through the heat conductive metal frame 130, and the first package substrate 20 and the second package substrate 40 are transferred, thereby further increasing the conduction rate of heat generated by the first wafer 30.

As shown in FIG. 17 , the laminated package structure provided by the present technical solution may also adopt the connection substrate provided by the fifth embodiment of the present technical solution, that is, the conductive pillar 120 and the heat conductive metal frame 130 protrude from the second surface 1112 . The first solder material 60 is electrically connected to a portion of the conductive pillar 120 protruding from the second surface 1112 and the fourth electrical contact pad 2220.

The laminated package structure provided by the technical solution can also adopt the connection substrate provided by the second, fourth and sixth embodiments of the technical solution, that is, the connection substrate further comprises a conductive blind hole, and the seventh electrical contact pad of the second package substrate 40 441 and the corresponding conductive blind holes or the first electrical contact pads 150 formed on the conductive blind holes are electrically connected to each other through the second solder material 70.

The connection substrate provided by the technical solution has a heat conductive metal frame formed therein for accommodating the wafer and rapidly transferring heat generated by the wafer. According to the technical solution of the present invention, since the first wafer is housed in the heat conductive metal frame of the connection substrate, heat generated by the first wafer can be quickly conducted from the first wafer, so that the first wafer does not be used during use. The temperature is too high to increase the life of the first wafer. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

10. . . Cascaded package structure

20. . . First package substrate

twenty one. . . First substrate layer

2110. . . Third surface

2120. . . Fourth surface

twenty two. . . First conductive line pattern

2210. . . Third electrical contact pad

2220. . . Fourth electrical contact pad

twenty three. . . Second conductive line pattern

2310. . . Fifth electrical contact pad

twenty four. . . First solder mask

25. . . Second solder mask

26. . . Solder balls

30. . . First wafer

31. . . Conductive blind hole

32. . . First encapsulant

40. . . Second package substrate

42. . . Second base layer

421. . . Fifth surface

422. . . Sixth surface

43. . . Third conductive line pattern

431. . . Sixth electrical contact pad

44. . . Fourth conductive line pattern

441. . . Seventh electrical contact pad

45. . . Third solder mask

46. . . Fourth solder mask

47. . . Conductive hole

50. . . Second chip

501. . . Bond wire

502. . . Third encapsulant

60. . . First welding material

70. . . Second welding material

100, 100a, 100b, 100c, 200, 200a, 200b, 300, 300a, 400, 500, 500a, 600. . . Connection substrate

110, 210, 310, 410, 510, 610. . . Insulating substrate

111, 211, 511, 611. . . First surface

112, 212, 512. . . Second surface

113, 213, 513. . . Through hole

114, 214, 514. . . Storage slot

1141, 5141. . . Bottom wall

1142, 5142. . . Side wall

120, 220, 320, 420, 520, 620. . . Conductive column

121, 251, 521. . . First end face

122, 222, 522, 622. . . Second end face

130, 230, 330, 430, 530, 630. . . Thermal metal frame

131, 531. . . roof

132, 532. . . Side panel

1321, 5321, 6321. . . Bottom

150, 260, 350, 460, 550, 660. . . First electrical contact pad

160, 270, 360, 470. . . Second electrical contact pad

2131. . . First hole

2132. . . Second hole section

250, 450, 650. . . Conductive blind hole

340, 440, 540, 640. . . Thermal connection

FIG. 1 is a schematic cross-sectional view of a connection substrate according to a first embodiment of the present technical solution.

Figure 2 is a plan view of Figure 1.

3-5 are schematic cross-sectional views of additional connection substrates provided by the first embodiment of the present technical solution.

6-8 are schematic cross-sectional views of a connection substrate provided by a second embodiment of the present technical solution.

9-10 are schematic cross-sectional views of a connection substrate provided by a third embodiment of the present technical solution.

FIG. 11 is a cross-sectional view of a connection substrate according to a fourth embodiment of the present technology.

FIG. 12 is a cross-sectional view of a connection substrate according to a fifth embodiment of the present technology.

13-14 are schematic cross-sectional views of a connection substrate provided in a sixth embodiment of the present technical solution.

15-17 are schematic cross-sectional views of a package package structure provided by the present technical solution, respectively.

100. . . Connection substrate

110. . . Insulating substrate

111. . . First surface

112. . . Second surface

113. . . Through hole

114. . . Storage slot

1141. . . Bottom wall

1142. . . Side wall

120. . . Conductive column

130. . . Thermal metal frame

131. . . roof

132. . . Side panel

1321. . . Bottom

Claims (16)

A connection substrate comprising an insulating substrate, a plurality of conductive pillars and a thermally conductive metal frame, the insulating substrate having opposite first and second surfaces, wherein the insulating substrate is formed with a plurality of through the first a plurality of through holes on the surface and the second surface, wherein the plurality of conductive columns are respectively received in the plurality of through holes, and a receiving groove is formed from the second surface of the insulating substrate toward the inside of the insulating substrate. The heat conductive metal frame is cooperatively received in the receiving groove. The connection substrate of claim 1, wherein the height of the conductive pillar is equal to the thickness of the insulating substrate, the insulating substrate has opposite first end faces and second end faces, the first end face and the first end face The first surface is flush and the second end surface is flush with the second surface. The connection substrate of claim 1, wherein the height of the conductive pillar is greater than the thickness of the insulating substrate, the insulating substrate has opposite first and second end faces, the first end surface and the first surface Flat, the second end surface protrudes from the second surface. The connection substrate of claim 1, wherein the connection substrate further comprises a heat conductive connection body connected between the heat conductive metal frame and a portion of the conductive pillar. The connection substrate of claim 1, wherein the connection substrate further comprises a plurality of first electrical contact pads formed on the first surface, the plurality of first electrical contact pads and the plurality of conductive pillars Corresponding and electrically connected to each other. The connection substrate of claim 5, wherein each of the first electrical contact pads is integrally formed with a corresponding conductive post. The connection substrate of claim 5, wherein the connection substrate further comprises a plurality of second electrical contact pads formed on the second surface, the second electrical contact pads are in one-to-one correspondence with the plurality of conductive pillars Electrically connected to each other. The connection substrate of claim 7, wherein each of the first electrical connection pads, the corresponding conductive posts and the corresponding second electrical connection pads are integrally formed. The connection substrate of claim 5, wherein the first surface is further formed with a first solder resist layer, and the first solder resist layer is formed with a plurality of first ones corresponding to the first electrical contact pads An opening, each of the first electrical contact pads being exposed from the corresponding first opening. The connection substrate of claim 1, wherein the connection substrate further comprises a plurality of conductive blind holes connected in one-to-one correspondence with the plurality of conductive columns, the first hole to the second surface, the through holes including the interconnection The first hole segment and the second hole segment are in the shape of a truncated cone. The conductive blind hole is received in the first hole segment, and the conductive blind hole is received in the second hole segment. The connection substrate of claim 10, wherein the conductive blind hole has a first end surface away from the corresponding conductive pillar, and the conductive pillar has a second end surface away from the conductive blind hole, the first end surface and The first surface is flush and the second end surface is flush with the second surface. The connection substrate of claim 10, wherein the conductive blind hole has a first end surface away from the corresponding conductive pillar, and the conductive pillar has a second end surface away from the conductive blind hole, the first end surface and The first surface is flush and the second end surface protrudes from the second surface. The connection substrate of claim 10, wherein the connection substrate further comprises a heat conductive connection body connected between the heat conductive metal frame and a portion of the conductive pillar. A stacked package structure comprising a first package substrate, a first wafer packaged on the first package substrate, a second package substrate, a second wafer packaged on the second package substrate, a first solder material, a second solder material, and The connection substrate according to any one of claims 1 to 13, wherein the first package substrate is disposed on a side of the second surface of the connection substrate, and the surface of the first package substrate in contact with the connection substrate has a plurality of a third electrical contact pad and a plurality of fourth electrical contact pads, wherein the first wafer is electrically connected to the first package substrate through a plurality of third electrical contact pads, and one end of each of the conductive posts passes through the first solder material Electrically connecting to a corresponding third electrical contact pad, the first chip is received in a thermally conductive metal frame of the connection substrate, and the second package substrate is disposed on a side of the first surface of the connection substrate. The second package substrate has a seventh electrical contact pad corresponding to the plurality of conductive pillars, and the other end of each conductive pillar is electrically connected to the corresponding seventh electrical contact pad through the second solder material. The package package structure of claim 14, wherein the first wafer and the heat conductive metal frame are filled with an encapsulant, and the encapsulant is made of a high heat dissipation adhesive material. The stacked package structure of claim 14, wherein the first package substrate has a plurality of fourth electrical contact pads away from the surface of the connection substrate, and each of the fourth electrical contact pads is formed with a solder ball.