TWI455664B - Connecting substrate and laminated package structure - Google Patents

Description

Connecting substrate and laminated package structure

The present invention relates to a semiconductor package technology, and more particularly to a connection substrate and a package-on-package (POP) structure.

As the size of semiconductor devices continues to decrease, laminated package structures having semiconductor devices are also receiving increasing attention. The package structure is generally made by a laminate manufacturing method. In the conventional laminate fabrication method, in order to achieve high-density integration and small-area mounting, the upper and lower package devices are usually electrically connected by solder balls having a diameter of 200 μm to 300 μm. However, a solder ball having a diameter of 200 μm to 300 μm is not only bulky, but also easily breaks between the solder ball and the electrical contact pad to which it is connected, so that not only the pad corresponding to the solder ball on the lower package device is made. The area is also large, which makes it difficult to reduce the volume of the package structure and reduce the yield and reliability of the package structure. The lower package device is packaged between the upper and lower circuit carriers, and the heat generated by the package is not easily dissipated, and the heat dissipation of the lower package device is poor, which affects the service life of the entire package package structure.

In view of the above, it is necessary to provide a connection substrate and a laminated package structure which are highly reliable and have good heat dissipation properties.

A connection substrate comprising an insulating substrate, a plurality of conductive pillars and a thermally conductive metal frame The insulating substrate has opposite first and second surfaces, and a plurality of through holes penetrating the first surface and the second surface are formed in the insulating substrate, and the plurality of conductive columns are in one-to-one correspondence The ground heat is disposed in the plurality of through holes, and the receiving hole is formed from the second surface of the insulating substrate toward the first surface. The heat conductive metal frame has a top plate and a side plate connected to the top plate, and the heat conductive metal frame is matched and received. In the receiving hole, the top plate is exposed from a side of the first surface, and the side plate is in mating contact with an inner wall of the receiving hole.

A stacked package structure comprising a first package substrate, a first wafer packaged on the first package substrate, a second package substrate, a second wafer packaged on the second package substrate, a first solder material, a second solder material, and a The first package substrate is disposed on a side of the second surface of the connection substrate, and the surface of the first package substrate that is in contact with the connection substrate has a plurality of third electrical contact pads and a plurality of a fourth electrical contact pad, the first wafer is electrically connected to the first package substrate through a plurality of third electrical contact pads, and one end of each of the conductive posts is electrically connected to a corresponding third through the first solder material The pads are electrically connected to each other, the first chip is received in a thermally conductive metal frame of the connection substrate, the second package substrate is disposed on a side of the first surface of the connection substrate, and the second package substrate has a plurality of The seventh electrical contact pads corresponding to the conductive columns are one-to-one, and the other end of each of the conductive posts is electrically connected to the corresponding seventh electrical contact pad through the second solder material.

The connection substrate provided by the technical solution has a heat conductive metal frame formed therein for accommodating the wafer and rapidly transferring heat generated by the wafer. According to the technical solution of the present invention, since the first wafer is housed in the heat conductive metal frame of the connection substrate, heat generated by the first wafer can be quickly conducted from the first wafer, so that the first wafer does not be used during use. The temperature is too high to increase the life of the first wafer.

10‧‧‧Layered package structure

20‧‧‧First package substrate

21‧‧‧First basal layer

2110‧‧‧ third surface

2120‧‧‧ fourth surface

22‧‧‧First conductive line pattern

2210‧‧‧ Third electrical contact pad

2220‧‧‧4th electrical contact pad

23‧‧‧Second conductive line pattern

2310‧‧‧ fifth electrical contact pad

24‧‧‧First solder mask

25‧‧‧Second solder mask

26‧‧‧ solder balls

30‧‧‧First chip

31‧‧‧ Conductive blind holes

32‧‧‧First encapsulant

40‧‧‧Second package substrate

42‧‧‧Second basal layer

421‧‧‧ fifth surface

422‧‧‧ sixth surface

43‧‧‧ Third conductive circuit pattern

431‧‧‧6th electrical contact pad

44‧‧‧fourth conductive line pattern

441‧‧‧ seventh electrical contact pad

45‧‧‧ Third solder mask

46‧‧‧four solder mask

47‧‧‧Electrical hole

50‧‧‧second chip

501‧‧‧bond wire

502‧‧‧The third encapsulant

60‧‧‧First welding material

70‧‧‧Second welding material

100, 100a, 100b, 100c, 200, 200a, 200b, 200c, 300, 300a, 400, 400a, 500‧‧‧ connection substrate

110, 210, 310, 410, 510‧‧ ‧ insulating substrate

111, 211, 311, 511‧‧‧ first surface

112, 212, 312‧‧‧ second surface

113, 313‧‧‧through holes

114, 314‧‧‧ receiving holes

1142, 3142‧‧‧ side wall

120, 220, 320, 420, 520‧‧‧ conductive columns

121, 251, 321‧‧‧ first end face

122, 222, 322‧‧‧ second end face

130, 230, 330, 430, 530‧‧‧ thermally conductive metal frame

131, 231, 331, 4310‧‧‧ top board

1331, 3311‧‧‧ top

233, 433‧‧‧ openings

132, 332‧‧‧ side panels

1331, 3321‧‧‧ bottom

150, 260, 350, 450‧‧‧ first electrical contact pads

160, 270, ‧ ‧ second electrical contact pads

140, 540‧‧‧ Thermal connection

FIG. 1 is a schematic cross-sectional view of a connection substrate according to a first embodiment of the present technical solution.

Figure 2 is a plan view of Figure 1.

3-5 are schematic cross-sectional views of additional connection substrates provided by the first embodiment of the present technical solution.

6-10 are schematic cross-sectional views of a connection substrate provided by a second embodiment of the present technical solution.

11-12 are schematic cross-sectional views of a connection substrate provided by a third embodiment of the present technical solution.

13-14 are schematic cross-sectional views of a connection substrate according to a fourth embodiment of the present technology.

FIG. 15 is a cross-sectional view of a connection substrate according to a fifth embodiment of the present technology.

16-20 are schematic cross-sectional views of a package package structure provided by the present technical solution, respectively.

The connection substrate and the package structure provided by the present technical solution will be further described in detail below with reference to the accompanying drawings and embodiments.

Referring to FIG. 1 and FIG. 2 , the first embodiment of the present invention provides a connection substrate 100 . The connection substrate 100 includes an insulating substrate 110 , a plurality of conductive pillars 120 , and a heat conductive metal frame 130 .

The insulating substrate 110 has opposing first and second surfaces 111, 112. A plurality of mutually separated through holes 113 penetrating the first surface 111 and the second surface 112 are formed in the insulating substrate 110. A receiving hole 114 is further formed from the second surface 112 toward the first surface 111. In this embodiment, the receiving space formed by the receiving hole 114 is a rectangular parallelepiped shape, and the The receiving hole 114 is for housing an electronic device. The receiving hole 114 has four side walls 1142 that are vertically connected in sequence. The shape of the receiving hole 114 can be set according to the shape of the electronic device that needs to be accommodated. A plurality of through holes 113 are disposed around the receiving holes 114 and do not communicate with the receiving holes 114.

A plurality of conductive pillars 120 are formed in the plurality of through holes 113 in a one-to-one correspondence. Each of the conductive pillars 120 has an opposite first end surface 121 and a second end surface 122. In this embodiment, each of the conductive pillars 120 has a length equal to the thickness of the insulating substrate 110. The first end surface 121 is flush with the first surface 111. The second end surface 122 is flush with the second surface 112.

The heat conductive metal frame 130 is received in the receiving hole 114. The shape of the periphery of the heat conductive metal frame 130 corresponds to the shape of the receiving hole 114. In this embodiment, the heat conductive metal frame 130 includes a top plate 131 and four side plates 132 perpendicularly connected to the top plate 131. The top plate 131 has a top surface 1311 that is remote from the four side panels 132. The top surface 1311 is flush with the first surface 111. The four side plates 132 are in contact with the four side walls 1142 of the receiving holes 114 in one-to-one correspondence. In this embodiment, each side plate 132 has a bottom surface 1321 away from the top plate 131. The bottom surface 1321 is flush with the second surface 112. The heat conductive metal frame 130 is made of a heat conductive metal such as copper, aluminum, and silver. Preferably, the material of the heat conductive metal frame 130 is the same as that of the conductive pillar 120, and is made of metal copper.

Referring to FIG. 3 to FIG. 5 , the connection substrate 100 may further include a plurality of first electrical contact pads 150 and/or a plurality of second electrical contact pads 160 .

Referring to FIG. 3, the connection substrate 100a includes a plurality of first electrical contact pads 150. Each of the first electrical contact pads 150 is electrically connected to a conductive post 120. The first electrical contact pad 150 is formed on the first surface 111. Preferably, each of the first electrical contact pads 150 is integrally formed with the conductive pillars 120 electrically connected to each other.

Referring to FIG. 4, the connection substrate 100b includes a plurality of second electrical contact pads 160. Each of the second electrical contact pads 160 is electrically connected to a conductive post 120. A second electrical contact pad 160 is formed on the second surface 112. Preferably, each of the second electrical contact pads 160 is integrally formed with the conductive pillars 120 electrically connected to each other.

Referring to FIG. 5 , the connection substrate 100 c includes a plurality of first electrical contact pads 150 and a plurality of second electrical contact pads 160 . Each of the first electrical contact pads 150 is electrically connected to a conductive post 120. The first electrical contact pad 150 is formed on the first surface 111. Each of the second electrical contact pads 160 is electrically connected to a conductive post 120. A second electrical contact pad 160 is formed on the second surface 112.

Referring to FIG. 6 and FIG. 7 , the second embodiment of the present invention provides a connection substrate 200 . The structure of the connection substrate 200 is similar to the structure of the connection substrate 100 provided by the first embodiment. The connection substrate 200 includes an insulating substrate 210, a plurality of conductive pillars 220, and a thermally conductive metal frame 230. The difference is that an opening 233 is defined in the top plate 231 of the heat conductive metal frame 230. The number of openings 233 may be one or more. In this embodiment, the number of the openings 233 is two. The opening 233 can be used to inject the encapsulating material into the hot metal frame 230, and can also be used to connect the wafer packaged in the thermally conductive metal frame 230 to the outside.

It can be understood that the connection substrate 200 in this embodiment may include a first electrical contact pad and/or a second electrical contact pad. Specifically, the connection substrate 200a shown in FIG. 8 may include a plurality of first electrical contact pads 260. Each of the first electrical contact pads 260 is electrically connected to a conductive post 220. The first electrical contact pad 260 is formed on the first surface 211. Referring to FIG. 9, the connection substrate 200b includes a plurality of second electrical contact pads 270. Each of the second electrical contact pads 270 is electrically connected to a conductive post 220. A second electrical contact pad 270 is formed on the second surface 212. Please refer to FIG. 10, the connection substrate 200c A plurality of first electrical contact pads 260 and second electrical contact pads 270 are included. The first electrical contact pad 260 is formed on the first surface 211 , and the second electrical contact pad 270 is formed on the second surface 212 . One conductive contact pad 260 is connected to one end of each of the conductive posts 220, and the second electrical contact pad 270 is connected to the other end.

Referring to FIG. 11 , a third embodiment of the present invention provides a connection substrate 300. The structure of the connection substrate 300 is similar to that of the connection substrate 100 provided by the first embodiment. The connection substrate 300 includes an insulating substrate 310 and a plurality of conductive pillars. 320 and a thermally conductive metal frame 330.

The insulating substrate 310 has opposing first and second surfaces 311, 312. A plurality of mutually separated through holes 313 penetrating the first surface 311 and the second surface 312 are formed in the insulating substrate 310. A receiving hole 314 is further formed from the second surface 312 toward the first surface 311. The receiving hole 314 is for receiving an electronic device. The receiving hole 314 has four side walls 3142 which are vertically connected in sequence. Four side walls 3142 are connected between the first surface 311 and the second surface 312. The shape of the receiving hole 314 can be set according to the shape of the electronic device that needs to be accommodated. A plurality of through holes 313 are disposed around the receiving holes 314 and do not communicate with the receiving holes 314.

A plurality of conductive pillars 320 are formed in the plurality of through holes 313 in a one-to-one correspondence. Each of the conductive pillars 320 has an opposite first end surface 321 and a second end surface 322. In this embodiment, the length of each of the conductive pillars 320 is greater than the thickness of the insulating substrate 110. The first end surface 321 is flush with the first surface 311. The second end surface 322 protrudes from the second surface 312.

The heat conductive metal frame 330 is received in the receiving hole 314. The shape of the periphery of the heat conductive metal frame 330 corresponds to the shape of the receiving hole 314. In this embodiment, the heat conductive metal frame 330 includes a top plate 331 and four side plates 332 perpendicularly connected to the top plate 331. The top plate 331 has a top surface 3311 away from the four side plates 332, and the top surface 3311 is flush with the first surface 311. Four The side plates 332 are in contact with the four side walls 3142 of the receiving holes 314 in a one-to-one correspondence. In this embodiment, each side plate 332 has a bottom surface 3321 away from the top plate 331. The bottom surface 3321 also protrudes from the second surface 312. The heat conductive metal frame 330 is made of a heat conductive metal such as copper, aluminum, and silver. Preferably, the material of the thermally conductive metal frame 330 is the same as that of the conductive post 320, and is made of metallic copper.

Referring to FIG. 12 , the first end surface 321 of the conductive pillar 320 of the connection substrate 300 a of the present embodiment may form a first electrical contact pad 350 .

Referring to FIG. 13 , a connection substrate 400 is provided in a fourth embodiment of the present invention. The structure of the connection substrate 400 is similar to the structure of the connection substrate 300 provided by the third embodiment of the present technical solution. The connection substrate 400 includes an insulating substrate 410 . a plurality of conductive pillars 420 and a heat conductive metal frame 430. The difference is that an opening 433 is formed in the top plate 4310 of the thermally conductive metal frame 430.

It can be understood that the connection substrate 400 provided by the fourth embodiment may also include a first electrical contact pad. As shown in FIG. 14 , in the connection substrate 400 a , one end of each of the conductive pillars 420 is formed with a first electrical contact pad 450 , and the first electrical contact pad 450 is formed on the first surface 411 .

Referring to FIG. 15 , a fifth embodiment of the present invention provides a connection substrate 500 . The structure of the connection substrate 500 is similar to that of the connection substrate 100 provided by the first embodiment of the present technical solution. The connection substrate 500 also includes an insulating substrate. 510. A plurality of conductive pillars 520 and a heat conductive metal frame 530. The difference is that the connection substrate 500 further includes a thermally conductive connecting body 540. The thermally conductive connector 540 is coupled between the thermally conductive metal frame 530 and the at least one conductive post 520. In this embodiment, the thermally conductive connecting body 540 is formed on one side of the first surface 511.

It can be understood that the thermal conductive connecting body can be formed in the connecting substrate in the first to fifth embodiments provided by the technical solution to interconnect the thermally conductive metal frame and the conductive pillar.

It can be understood that both sides of the connection substrate provided by the first embodiment to the fifth embodiment of the present technical solution may include a solder resist layer formed on the surface of the insulating substrate, and the solder resist layer A plurality of openings are formed such that one end of the first electrical contact pad, the second electrical contact pad or the conductive post is exposed from the corresponding opening.

Referring to FIG. 16 , a sixth embodiment of the present invention provides a package structure 10 including a first package substrate 20 , a first wafer 30 packaged on the first package substrate 20 , a second package substrate 40 , and a second package . The second wafer 50 of the package substrate 40, the first solder material 60, the second solder material 70, and any one of the connection substrates provided by the first to sixth embodiments of the present technical solutions. In this embodiment, the connection substrate 100c shown in FIG. 5 according to the first embodiment of the present technical solution is taken as an example for description.

The first package substrate 20 includes a first base layer 21, first conductive trace patterns 22 and second conductive trace patterns 23 respectively disposed on opposite surfaces of the first base layer 21, and respectively formed on the first conductive traces The first solder resist layer 24 and the second solder resist layer 25 and the plurality of solder balls 26 on the pattern 22 and the second conductive line pattern 23.

The first substrate layer 21 is a multi-layer substrate comprising a plurality of layer resin layers and a plurality of layer conductive line patterns (not shown) alternately arranged. The first substrate layer 21 includes an opposite third surface 2110 and a fourth surface 2120. The first conductive trace pattern 22 is disposed on the third surface 2110 of the first substrate layer 21, and the second conductive trace pattern 23 is disposed on The fourth surface 2120 of the first substrate layer 21 is on the surface. The plurality of layer conductive line patterns of the first base layer 21 and the plurality of layer conductive line patterns of the first base layer 21 and the first conductive line pattern 22 and the second conductive line pattern 23 respectively pass through the conductive holes (Fig. Not shown) Electrical connection.

The first solder resist layer 24 covers a portion of the first conductive trace pattern 22 and the third surface 2110 exposed from the first conductive trace pattern 22 to expose a portion of the first conductive trace pattern 22 from the first solder resist layer 24. A plurality of third electrical contact pads 2210 and a plurality of fourth electrical contact pads 2220 are formed. The third electrical contact pads 2210 are arranged in an array, the plurality of fourth electrical contact pads 2220 are disposed around the plurality of third electrical contact pads 2210, and the plurality of fourth electrical contact pads 2220 are disposed on the A plurality of third electrical contact pads 2210 are circumferentially.

The second solder resist layer 25 covers a portion of the second conductive trace pattern 23 and the fourth surface 2120 exposed from the second conductive trace pattern 23, so that a portion of the second conductive trace pattern 23 is exposed from the second solder resist layer 25. A plurality of fifth electrical contact pads 2310 are formed, and the fifth electrical contact pads 2310 are arranged in an array. The plurality of third electrical contact pads 2210 and the plurality of fourth electrical contact pads 2220 pass through the first conductive line pattern 22, the conductive lines of the second conductive line pattern 23, and the conductive line patterns and conductive lines in the first base layer 21. The holes are electrically connected to the plurality of fifth electrical contact pads 2310.

A plurality of solder balls 26 are formed one by one on the plurality of fifth electrical contact pads 2310.

The first wafer 30 is encapsulated on one side of the first solder resist layer 24 of the first package substrate 20. In this embodiment, the first wafer 30 is bonded to the surface of the first solder resist layer 24 of the first package substrate 20 through the first encapsulant 32. The first encapsulant 32 is made of a high heat dissipation adhesive material, which may be a thermal adhesive. The first wafer 30 is mounted on the first package substrate 20 by a flip chip packaging technology. The first wafer 30 has a plurality of electrical connection pads (not shown) corresponding to the third electrical contact pads 2210. The third electrical contact pads 2210 and the corresponding electrical connection pads pass through the conductive blind holes 31. Electrically connected to each other. It can be understood that the conductive blind hole 31 can be a solder ball or a copper paste, or can be a metal guide. The electric column and the solder ball are combined with each other, or the copper paste and the copper conductive blind hole are combined with each other.

In this embodiment, the fifth solder resist layer 101 and the sixth solder resist layer 102 are respectively formed on both sides of the connection substrate 100c. The plurality of first electrical contact pads 150 are exposed from the openings of the fifth solder mask layer 101, and the plurality of second electrical contact pads 160 are exposed from the openings of the sixth solder mask layer 102. The second electrical contact pads 160 of the connection substrate 100c are in one-to-one correspondence with the fourth electrical contact pads 2220 of the first package substrate 20. A second electrical contact pad 160 and a fourth electrical contact pad 2220 corresponding to each other are electrically connected to each other by the first solder material 60. The first wafer 30 is housed in the thermally conductive metal frame 130. In order to improve the thermal conduction efficiency, a second package film 33 is further formed between the thermally conductive metal frame 130 and the first wafer 30. The second package film 33 is also made of a high heat dissipation adhesive material, which may be a thermal conductive adhesive.

The second package substrate 40 is formed on a side of the connection substrate 100 away from the first package substrate 20 . The second package substrate 40 includes a third conductive layer pattern 43 and a fourth conductive line pattern 44 respectively disposed on two opposite surfaces of the second substrate layer 42 and respectively formed on the third conductive layer The third solder resist layer 45 and the fourth solder resist layer 46 on the line pattern 43 and the fourth conductive line pattern 44.

The second substrate layer 42 includes an opposite fifth surface 421 and a sixth surface 422. The third conductive trace pattern 43 is disposed on the fifth surface 421 of the second substrate layer 42. The fourth conductive trace pattern 44 is disposed on the second conductive trace pattern 43. The sixth surface 422 of the second substrate layer 42 is on. The third conductive line pattern 43 and the fourth conductive line pattern 44 are electrically conducted through the plurality of conductive holes 47.

The third solder resist layer 45 covers a portion of the third conductive trace pattern 43 and the fifth surface 421 exposed from the third conductive trace pattern 43 to expose a portion of the third conductive trace pattern 43 from the third solder resist layer 45. A plurality of sixth electrical contact pads 431 are formed. The third The surface of the solder resist layer 45 has a wafer holding area for fixing the wafer thereon. The plurality of sixth electrical contact pads 431 are disposed around the wafer holding area.

The fourth solder resist layer 46 covers a portion of the fourth conductive trace pattern 44 and the sixth surface 422 of the second base layer 42 exposed from the fourth conductive trace pattern 44, such that the portion of the fourth conductive trace pattern 44 is from the first The four solder resist layers 46 are exposed to form a plurality of seventh electrical contact pads 441 , and the plurality of seventh electrical contact pads 441 are in one-to-one correspondence with the plurality of first electrical contact pads 150 . The plurality of sixth electrical contact pads 431 are electrically connected to the plurality of seventh electrical contact pads 441 through the conductive lines of the third conductive trace pattern 43 and the fourth conductive trace pattern 44 and the conductive vias 47. The seventh electrical contact pad 441 is in one-to-one correspondence with the plurality of first electrical contact pads 150 , and each of the first electrical contact pads 150 and the corresponding seventh electrical contact pads 441 are electrically connected to each other through the second solder material 70 .

The third conductive line pattern 43 and the fourth conductive line pattern 44 may be formed by selectively etching a copper layer. In this embodiment, the second package substrate 40 is a double-sided circuit board. Of course, the second package substrate 40 may also be a multi-layer board having more than two layers of conductive line patterns, that is, the second base layer 42 may be a multi-layer substrate. The multilayer resin layer and the multilayer conductive wiring pattern are alternately arranged.

The second wafer 50 is encapsulated on the surface of the third solder resist layer 45 of the second package substrate 40. In this embodiment, the second wafer 50 is a wire bonding (WB) wafer, and the second wafer 50 is electrically connected to the sixth electrical contact pad 431. Specifically, the second wafer 50 has a plurality of bonding contacts and a plurality of strip bonding wires 501 extending from the plurality of bonding contacts, and the bonding wires 501 are in one-to-one correspondence with the sixth electrical contact pads 431. One end of the plurality of strip bonding wires 501 is electrically connected to the second wafer 50, and the other end is electrically connected to the plurality of sixth electrical contact pads 431, respectively, so that the second wafer 50 is electrically connected to the third conductive line pattern 43. .

Preferably, the second wafer 50 is fixed to the wafer fixing area on the surface of the third solder resist layer 45 by an adhesive layer, and the bonding wire 501 can be connected to the sixth electrical contact pad 431 by soldering. The material of the bonding wire 501 is generally gold. In this embodiment, the surface of the third solder resist 45 and the sixth electrical contact pad 431 exposed by the bonding wires 501, the second wafer 50 and the second package substrate 40 are encapsulated by the third encapsulant 502. The bonding wires 501 and the second wafer 50 are completely covered in the third encapsulant 502. In this embodiment, the third encapsulant 502 is a black plastic. Of course, the third encapsulant 502 can also be a other encapsulating colloidal material, which is not limited to the embodiment.

It can be understood that when the cross-sectional area of the connection substrate 100c and the second package substrate 40 is smaller than the cross-sectional area of the first package substrate 20, the third package colloid may also be formed on the sides of the connection substrate 100c and the second package substrate 40. 502, the connection substrate 100c and the second package substrate 40 are also covered by the third encapsulant 502.

In the laminated package structure 10 provided by the present technical solution, since the first wafer 30 is received in the heat conductive metal frame 130 of the connection substrate 100c, the heat generated by the first wafer 30 during the operation can be quickly transferred to the heat conductive metal frame 130 and transmitted. The insulating substrate 110 to the connection substrate 100c allows heat to be quickly diffused out of the package structure 10, so that the conduction rate of heat generated by the first wafer 30 can be increased.

It can be understood that, as shown in FIG. 17 , the connection package provided by the present technical solution can also adopt the connection substrate provided by the second embodiment of the present technical solution, that is, when the package is performed, the second encapsulation 33 can pass through the opening 133 . Injection into the thermally conductive metal frame 130.

Referring to FIG. 18 , the laminated package structure provided by the present technical solution may also adopt the connection substrate provided by the third embodiment of the present technical solution, that is, the conductive pillar 120 and the heat conductive metal frame 130 protrude from the second surface 1112 . The first solder material 60 is electrically connected to a portion of the conductive pillar 120 protruding from the second surface 1112 and the fourth electrical contact pad 2220.

Referring to FIG. 19 , the laminated package structure provided by the present technical solution may also adopt the connection substrate provided by the fourth embodiment of the present technical solution, that is, the conductive pillar 120 and the heat conductive metal frame 130 protrude from the second surface 1112 . The first solder material 60 is electrically connected to the portion of the conductive pillar 120 protruding from the second surface 1112 and the fourth electrical contact pad 2220 , and the second encapsulant 33 can be injected into the thermally conductive metal frame 130 through the opening 133 .

Referring to FIG. 20, the laminated package structure provided by the present technical solution may also adopt the connection substrate provided by the fifth embodiment of the present technical solution. The thermal conductive metal frame 130 and the partial conductive pillars 120 form a heat conductive connection body 140, thereby making the first wafer. The generated heat may be transferred to the conductive pillars 120 through the thermally conductive metal frame 130 and transmitted to the first package substrate 20 and the second package substrate 40 to further increase the conduction rate of heat generated by the first wafer 30.

The connection substrate provided by the technical solution has a heat conductive metal frame formed therein for accommodating the wafer and rapidly transferring heat generated by the wafer. According to the technical solution of the present invention, since the first wafer is housed in the heat conductive metal frame of the connection substrate, heat generated by the first wafer can be quickly conducted from the first wafer, so that the first wafer does not be used during use. The temperature is too high to increase the life of the first wafer.

However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100‧‧‧Connecting substrate

110‧‧‧Insulating substrate

111‧‧‧ first surface

112‧‧‧ second surface

113‧‧‧through hole

114‧‧‧ receiving holes

1142‧‧‧ side wall

120‧‧‧conductive column

130‧‧‧thermal metal frame

131‧‧‧ top board

1311‧‧‧ top surface

132‧‧‧ side panels

1321‧‧‧ bottom

Claims (13)

A connection substrate comprising an insulating substrate, a plurality of conductive pillars and a thermally conductive metal frame, the insulating substrate having opposite first and second surfaces, wherein the insulating substrate is formed with a plurality of through the first a plurality of through holes on the surface and the second surface, the plurality of conductive columns are respectively received in the plurality of through holes, and a receiving hole is formed from the second surface of the insulating substrate toward the first surface. The heat conductive metal frame has a top plate and a side plate connected to the top plate. The heat conductive metal frame is cooperatively received in the receiving hole. The top plate is exposed from a side of the first surface, and the side plate is in mating contact with the inner wall of the receiving hole. The connection substrate of claim 1, wherein the height of the conductive pillar is equal to the thickness of the insulating substrate, the insulating substrate has opposite first end faces and second end faces, the first end face and the first end face The first surface is flush and the second end surface is flush with the second surface. The connection substrate of claim 1, wherein the height of the conductive pillar is greater than the thickness of the insulating substrate, the insulating substrate has opposite first and second end faces, the first end surface and the first surface Flat, the second end surface protrudes from the second surface. The connection substrate of claim 1, wherein the connection substrate further comprises a heat conductive connection body connected between the heat conductive metal frame and a portion of the conductive pillar. The connection substrate according to claim 4, wherein the thermally conductive connecting body is exposed from a side of the first surface. The connection substrate of claim 1, wherein the connection substrate further comprises a plurality of first electrical contact pads formed on the first surface, the plurality of first electrical contact pads and the plurality of conductive pillars Corresponding and electrically connected to each other. The connection substrate of claim 6, wherein each of the first electrical contact pads is integrally formed with a corresponding conductive post. The connection substrate of claim 6, wherein the connection substrate further comprises a plurality of second electrical contact pads formed on the second surface, the second electrical contact pads are in one-to-one correspondence with the plurality of conductive pillars Electrically connected to each other. The connection substrate of claim 6, wherein the first surface is further formed with a fifth solder resist layer, and the fifth solder resist layer is formed with a plurality of openings corresponding to the first electrical contact pads. Each of the first electrical contact pads is exposed from the corresponding opening. The connection substrate according to claim 1, wherein the top plate is provided with at least one opening penetrating the top plate. A stacked package structure comprising a first package substrate, a first wafer packaged on the first package substrate, a second package substrate, a second wafer packaged on the second package substrate, a first solder material, a second solder material, and The connection substrate according to any one of claims 1 to 13, wherein the first package substrate is disposed on a side of the second surface of the connection substrate, and the surface of the first package substrate in contact with the connection substrate has a plurality of a third electrical contact pad and a plurality of fourth electrical contact pads, wherein the first wafer is electrically connected to the first package substrate through a plurality of third electrical contact pads, and one end of each of the conductive posts passes through the first solder material Electrically connecting to a corresponding third electrical contact pad, the first chip is received in a thermally conductive metal frame of the connection substrate, and the second package substrate is disposed on a side of the first surface of the connection substrate. The second package substrate has a seventh electrical contact pad corresponding to the plurality of conductive pillars, and the other end of each conductive pillar is electrically connected to the corresponding seventh electrical contact pad through the second solder material. The package structure as claimed in claim 1 , wherein the first wafer and the heat conductive metal frame are filled with an encapsulant, and the encapsulant is made of a high heat dissipation adhesive material. The stacked package structure of claim 1, wherein the first package substrate has a plurality of fourth electrical contact pads away from the surface of the connection substrate, and each of the fourth electrical contact pads is formed with a solder ball.