TW201405595A - Thin film type common mode filter - Google Patents
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- TW201405595A TW201405595A TW101127455A TW101127455A TW201405595A TW 201405595 A TW201405595 A TW 201405595A TW 101127455 A TW101127455 A TW 101127455A TW 101127455 A TW101127455 A TW 101127455A TW 201405595 A TW201405595 A TW 201405595A
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- 239000010409 thin film Substances 0.000 title claims abstract description 43
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- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
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Abstract
Description
本發明係有關於一種共模濾波器,尤指一種應用於可攜式電子裝置之薄膜式共模濾波器。 The present invention relates to a common mode filter, and more particularly to a thin film common mode filter applied to a portable electronic device.
共模濾波器是一種用於抑制共模電流之元件,所述共模電流會造成平行傳輸線路內電磁干擾(Electromagnetic interference;EMI)的產生,其為電子電路中一種雜訊之來源。隨著可攜式電子裝置之微型化,應用於可攜式電子裝置之共模濾波器多被要求微型化及高密度之結構,故薄膜式和疊層式共模濾波器逐漸取代傳統卷線型共模濾波器。 A common mode filter is an element for suppressing a common mode current, which causes electromagnetic interference (EMI) in a parallel transmission line, which is a source of noise in an electronic circuit. With the miniaturization of portable electronic devices, common mode filters used in portable electronic devices are often required to be miniaturized and high-density structures, so thin film and stacked common mode filters are gradually replacing the traditional winding type. Common mode filter.
日本專利公開號JP2000173824A揭露一種電子構件,其具有一絕緣基板、一層疊體及一外部電極端子部;該層疊體係於前述絕緣基板上將導體圖案與絕緣層交互層疊而形成,該外部電極端子部係電性連接至前述導體圖案,並跨越前述絕緣基板與前述層疊體而形成,其中,於該電子構件設置有由磁性體所構成的層或小片,用以遮蔽前述導體圖案的至少一部分。 Japanese Patent Publication No. JP2000173824A discloses an electronic component having an insulating substrate, a laminated body and an external electrode terminal portion; the laminated system is formed by alternately laminating a conductor pattern and an insulating layer on the insulating substrate, the external electrode terminal portion Electrically connected to the conductor pattern and formed across the insulating substrate and the laminate, wherein the electronic member is provided with a layer or a small piece made of a magnetic material for shielding at least a part of the conductor pattern.
然而,此類電子構件為增強其共模阻抗,通常需增加導體圖案之線圈之卷繞數,從而造成電子構件的體積變大。另外,先前技術還揭露可藉由改變層疊體的導體圖案以控制共模阻抗,由於導體圖案係與絕緣層交互層疊,因此結構上較為複雜,且影響之製程變數甚多。 However, in order to enhance the common mode impedance of such an electronic component, it is generally necessary to increase the number of windings of the coil of the conductor pattern, thereby causing the volume of the electronic component to become large. In addition, the prior art also discloses that the common mode impedance can be controlled by changing the conductor pattern of the laminated body. Since the conductor pattern is alternately laminated with the insulating layer, the structure is complicated and the number of process variations is large.
有鑒於此,發明人依據多年從事相關產品之製造開發及設計經驗,針對上述之目標詳加設計與審慎評估之後, 終於得到一種確具實用性之本發明。 In view of this, the inventors have based on years of experience in the manufacturing development and design of related products, and after detailed design and careful evaluation of the above objectives, Finally, a practical invention is obtained.
為了能夠增強並精確控制共模阻抗,本發明提供一種結構簡單且能夠有效微型化之薄膜式共模濾波器,所述薄膜式共模濾波器依序包括一非磁性材質之絕緣基板、一第一導體層、一第一電氣絕緣層、一第二導體層、一第二電氣絕緣層、一第三導體層、一第三電氣絕緣層、一第四導體層、一絕緣層及一磁性材料層。 In order to enhance and accurately control the common mode impedance, the present invention provides a thin film common mode filter which is simple in structure and can be effectively miniaturized. The thin film common mode filter sequentially includes a non-magnetic insulating substrate, a first a conductor layer, a first electrical insulation layer, a second conductor layer, a second electrical insulation layer, a third conductor layer, a third electrical insulation layer, a fourth conductor layer, an insulation layer and a magnetic material Floor.
其中,該第一導體層具有第一線圈,且該第一導體層設置於該非磁性材質之絕緣基板上;該第二導體層具有第二線圈,且該第二導體層設置於該第一導體層的上方;該第一電氣絕緣層設置於該第一導體層與該第二導體層之間;該第三導體層具有第三線圈,且該第三導體層設置於該第二導體層的上方;該第二電氣絕緣層設置於該第二導體層與該第三導體層之間,其中,該第一線圈通過該第一電氣絕緣層及該第二電氣絕緣層串聯該第三線圈,用以使該第一線圈與該第三線圈共同消除共模雜訊。 The first conductor layer has a first coil, and the first conductor layer is disposed on the non-magnetic insulating substrate; the second conductor layer has a second coil, and the second conductor layer is disposed on the first conductor Above the layer; the first electrically insulating layer is disposed between the first conductor layer and the second conductor layer; the third conductor layer has a third coil, and the third conductor layer is disposed on the second conductor layer The second electrical insulating layer is disposed between the second conductive layer and the third conductive layer, wherein the first coil is connected to the third coil through the first electrical insulating layer and the second electrical insulating layer. The first coil and the third coil are used together to eliminate common mode noise.
再者,該第四導體層具有第四線圈,且該第四導體層設置於該第三導體層的上方;該第三電氣絕緣層設置於該第三導體層與該第四導體層之間,其中,該第二線圈通過該第二電氣絕緣層及該第三電氣絕緣層串聯該第四線圈,用以使該第二線圈與該第四線圈共同消除共模雜訊;該絕緣層設置於該第三電氣絕緣層上;以及該磁性材料層設置於該絕緣層上; Furthermore, the fourth conductor layer has a fourth coil, and the fourth conductor layer is disposed above the third conductor layer; the third electrical insulation layer is disposed between the third conductor layer and the fourth conductor layer The second coil is connected in series with the fourth coil through the second electrical insulation layer and the third electrical insulation layer, so that the second coil and the fourth coil together cancel common mode noise; the insulation layer is disposed. On the third electrical insulating layer; and the magnetic material layer is disposed on the insulating layer;
值得一提的是,該第一線圈、該第二線圈、該第三線圈及該第四線圈的總長度L(mm)及寬度W(mm)滿足一關係表達式:[(7.2-fc)/3.0]2<L/W<[(8.15-fc)/2.7]2,其中fc為差模訊號之截止頻率。 It is worth mentioning that the total length L (mm) and the width W (mm) of the first coil, the second coil, the third coil and the fourth coil satisfy a relational expression: [(7.2-fc) /3.0] 2 <L/W<[(8.15-fc)/2.7] 2 , where fc is the cutoff frequency of the differential mode signal.
綜上所述,本發明之薄膜式共模濾波器中,電性串聯之第一線圈及第三線圈能夠彼此磁性耦合以消除共模雜訊,且電性串聯之第二線圈及第四線圈亦能達到相同之功效。藉此,所述薄膜式共模濾波器能夠將截止頻率控制在一範圍內,其不需透過增加線圈之卷繞數來增強並精確控制共模阻抗,且能夠有效微型化。此外,所述薄膜式共模濾波器透過將各線圈設置在非磁性材質之絕緣基板上,因此能夠精確控制其共模阻抗,使產生之截止頻率能夠被精確控制在一有效範圍內。 In summary, in the thin film common mode filter of the present invention, the first coil and the third coil electrically connected in series can be magnetically coupled to each other to eliminate common mode noise, and the second coil and the fourth coil electrically connected in series Can also achieve the same effect. Thereby, the thin film common mode filter can control the cutoff frequency within a range, which does not need to increase the number of windings of the coil to enhance and accurately control the common mode impedance, and can be effectively miniaturized. In addition, the thin film common mode filter can accurately control the common mode impedance by placing the coils on the insulating substrate of the non-magnetic material, so that the cutoff frequency can be accurately controlled within an effective range.
請參閱圖1,其顯示本發明之薄膜式共模濾波器1之第一實施例之立體分解圖,所述薄膜式共模濾波器1包括一非磁性材質之絕緣基板10、一線圈主體堆疊結構20、一絕緣層30及一磁性材料層40。其中線圈主體堆疊結構20設置於非磁性材質之絕緣基板10上,而磁性材料層40透過絕緣層30設置於線圈主體堆疊結構20上,以作為薄膜式共模濾波器1之蓋體。於本實施例中,所述絕緣層30可以是一膠合層,但不以此為限。 Referring to FIG. 1, there is shown a perspective exploded view of a first embodiment of a thin film common mode filter 1 of the present invention. The thin film common mode filter 1 includes a non-magnetic insulating substrate 10 and a coil body stack. The structure 20, an insulating layer 30 and a magnetic material layer 40. The coil body stack structure 20 is disposed on the non-magnetic insulating substrate 10, and the magnetic material layer 40 is disposed on the coil body stack structure 20 through the insulating layer 30 to serve as a cover of the thin film common mode filter 1. In this embodiment, the insulating layer 30 may be a bonding layer, but is not limited thereto.
具體而言,非磁性材質之絕緣基板10可以是氧化鋁(Al2O3)、氮化鋁(AlN)、玻璃(Glass)、石英(Quartz)或其他具高介電常數且非磁性之材料製成之絕緣基板。線圈主體堆疊結構20依序包括第一導體層21、第一電氣絕 緣層22、第二導體層23、第二電氣絕緣層24、第三導體層25、第三電氣絕緣層26及第四導體層27。絕緣層30設置於磁性材料層40與線圈主體堆疊結構20之間,使磁性材料層40批覆於線圈主體堆疊結構20上,可增加薄膜式共模濾波器1之電感效應。 Specifically, the non-magnetic insulating substrate 10 may be aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), glass (Glass), quartz (Quartz) or other materials having a high dielectric constant and non-magnetic properties. An insulating substrate is produced. The coil body stack structure 20 sequentially includes a first conductor layer 21, a first electrical insulation layer 22, a second conductor layer 23, a second electrical insulation layer 24, a third conductor layer 25, a third electrical insulation layer 26, and a fourth conductor. Layer 27. The insulating layer 30 is disposed between the magnetic material layer 40 and the coil body stack structure 20, and the magnetic material layer 40 is overlaid on the coil body stack structure 20, thereby increasing the inductance effect of the thin film common mode filter 1.
復參閱圖1,以下將線圈主體堆疊結構20之具體特徵。第一導體層21形成於非磁性材質之絕緣基板10之一表面,其包括一第一線圈211、一第一電極212、一第二電極213、一第三電極214及一第四電極215。更詳細地說,第一線圈211具有一內端部2111及一外端部2112,其中外端部2112連接第一電極212。 Referring back to Figure 1, the specific features of the coil body stack structure 20 will be described below. The first conductive layer 21 is formed on one surface of the non-magnetic insulating substrate 10, and includes a first coil 211, a first electrode 212, a second electrode 213, a third electrode 214, and a fourth electrode 215. In more detail, the first coil 211 has an inner end portion 2111 and an outer end portion 2112, wherein the outer end portion 2112 is connected to the first electrode 212.
第二導體層23形成於第一電氣絕緣層22之一表面,即第二導體層23與第一導體層21係分別設置於第一電氣絕緣層22之相對兩表面。第二導體層23包括一第二線圈231、一第一電極232、一第二電極233、一第三電極234及一第四電極235,其中第二線圈231具有一內端部2311及一外端部2312,且第二線圈231之外端部2312連接第三電極234。 The second conductor layer 23 is formed on one surface of the first electrical insulating layer 22, that is, the second conductor layer 23 and the first conductor layer 21 are respectively disposed on opposite surfaces of the first electrical insulating layer 22. The second conductor layer 23 includes a second coil 231, a first electrode 232, a second electrode 233, a third electrode 234, and a fourth electrode 235. The second coil 231 has an inner end portion 2311 and an outer portion. The end portion 2312 and the outer end portion 2312 of the second coil 231 are connected to the third electrode 234.
第三導體層25形成於第二電氣絕緣層24之一表面,即第三導體層25與第二導體層23係分別設置於第二電氣絕緣層24之相對兩表面。第三導體層25包括一第三線圈251、一第一電極252、一第二電極253、一第三電極254及一第四電極255,其中第三線圈251具有一內端部2511及一外端部2512,且第三線圈251之外端部2512連接第二電極253。 The third conductor layer 25 is formed on one surface of the second electrical insulating layer 24, that is, the third conductor layer 25 and the second conductor layer 23 are respectively disposed on opposite surfaces of the second electrical insulating layer 24. The third conductor layer 25 includes a third coil 251, a first electrode 252, a second electrode 253, a third electrode 254, and a fourth electrode 255. The third coil 251 has an inner end portion 2511 and an outer portion. The end portion 2512 and the outer end portion 2512 of the third coil 251 are connected to the second electrode 253.
第四導體層27形成於第三電氣絕緣層26之一表面 ,即第四導體層27與第三導體層25係分別設置於第三電氣絕緣層26之相對兩表面。第四導體層27包括一第四線圈271、一第一電極272、一第二電極273、一第三電極274及一第四電極275,其中第四線圈271具有一內端部2711及一外端部2712,且第四線圈271之外端部2712連接第四電極275。 The fourth conductor layer 27 is formed on one surface of the third electrical insulating layer 26 That is, the fourth conductor layer 27 and the third conductor layer 25 are respectively disposed on opposite surfaces of the third electrical insulating layer 26. The fourth conductor layer 27 includes a fourth coil 271, a first electrode 272, a second electrode 273, a third electrode 274 and a fourth electrode 275. The fourth coil 271 has an inner end portion 2711 and an outer portion. The end portion 2712 and the outer end portion 2712 of the fourth coil 271 are connected to the fourth electrode 275.
在本具體實施例中,第一線圈211、第二線圈231、第三線圈251及第四線圈271可以是矩形之螺旋線圈,但也可以是其他形狀之螺旋線圈。另外,第一線圈211、第二線圈231、第三線圈251及第四線圈271具有相同的捲繞數,且第一線圈211、第二線圈231、第三線圈251及第四線圈271在垂直於非磁性材質之絕緣基板10的方向上大致重疊,且第一導體層21、第二導體層23、第三導體層25及第四導體層27之各電極的位置在垂直於非磁性材質之絕緣基板10的方向上亦大致重疊。 In this embodiment, the first coil 211, the second coil 231, the third coil 251, and the fourth coil 271 may be rectangular spiral coils, but may be spiral coils of other shapes. In addition, the first coil 211, the second coil 231, the third coil 251, and the fourth coil 271 have the same number of windings, and the first coil 211, the second coil 231, the third coil 251, and the fourth coil 271 are vertical. The electrodes of the non-magnetic material are substantially overlapped in the direction of the insulating substrate 10, and the positions of the electrodes of the first conductor layer 21, the second conductor layer 23, the third conductor layer 25, and the fourth conductor layer 27 are perpendicular to the non-magnetic material. The insulating substrate 10 also substantially overlaps in the direction.
再者,第一電氣絕緣層22設置於第一導體層21與第二導體層23之間,且第一電氣絕緣層22上開設有一第一連接孔221;第二電氣絕緣層24設置於第二導體層23與第三導體層25之間,且第二電氣絕緣層24上開設有一第二連接孔241及一第三連接孔242;第三電氣絕緣層26設置於第三導體層25與第四導體層27之間,且第三電氣絕緣層26上開設有一第四連接孔261。其中第一連接孔221與第二連接孔241位於第一線圈211之內端部2111與第三線圈251之內端部2511的相對處,且第三連接孔242與第四連接孔261位於第二線圈231之內端部2311與第四 線圈271之內端部2711的相對處。 The first electrical insulating layer 22 is disposed between the first conductive layer 21 and the second conductive layer 23, and the first electrical insulating layer 22 defines a first connecting hole 221; the second electrical insulating layer 24 is disposed on the first A second connection hole 241 and a third connection hole 242 are defined in the second electrically conductive layer 24; the third electrically insulating layer 26 is disposed on the third conductor layer 25 and A fourth connecting hole 261 is defined in the fourth conductive layer 27 and on the third electrical insulating layer 26. The first connecting hole 221 and the second connecting hole 241 are located at opposite ends of the inner end portion 2111 of the first coil 211 and the inner end portion 2511 of the third coil 251, and the third connecting hole 242 and the fourth connecting hole 261 are located at the first end. Inner end 2311 and fourth of the second coil 231 The opposite end of the inner end 2711 of the coil 271.
值得一提的是,第一線圈211之內端部2111可通過第一連接孔221和第二連接孔241串聯於第三線圈251之內端部2511,且第二線圈231之內端部2311可通過第三連接孔242和第四連接孔261串聯於第四線圈271之內端部2711,藉此,串聯之第一線圈211與第三線圈251以及串聯之第二線圈231與第四線圈271能夠分別彼此磁性耦合以消除共模雜訊。 It is worth mentioning that the inner end portion 2111 of the first coil 211 can be connected in series to the inner end portion 2511 of the third coil 251 through the first connection hole 221 and the second connection hole 241, and the inner end portion 2311 of the second coil 231. The third connection hole 242 and the fourth connection hole 261 may be connected in series to the inner end portion 2711 of the fourth coil 271, whereby the first coil 211 and the third coil 251 are connected in series, and the second coil 231 and the fourth coil are connected in series. 271 can be magnetically coupled to each other to eliminate common mode noise.
請參閱圖2,其為所述薄膜式共模濾波器1運作時,產生之截止頻率對應各線圈之總長度L(mm)除以線寬W(mm)的關係示意圖。由此可知,每一個截止頻率對應總長度L(mm)除以線寬W(mm)的節點均落入第一趨勢線G1與第二趨勢線G2之範圍內,即薄膜式共模濾波器1產生之截止頻率大致介於2.5至5.5 MHz之間,符合特定之可攜式電子裝置的需求。 Please refer to FIG. 2 , which is a schematic diagram showing the relationship between the cutoff frequency generated by the thin film common mode filter 1 and the total length L (mm) of each coil divided by the line width W (mm). It can be seen that each of the cutoff frequencies corresponding to the total length L (mm) divided by the line width W (mm) nodes fall within the range of the first trend line G1 and the second trend line G2, that is, the thin film common mode filter The resulting cutoff frequency is roughly between 2.5 and 5.5 MHz, meeting the needs of a particular portable electronic device.
更詳細地說,所述薄膜式共模濾波器1透過將矩形螺旋狀之第一線圈211、第二線圈231、第三線圈251及第四線圈271設置於非磁性材質之絕緣基板上,且較佳為氧化鋁基板,因此能夠滿足下列之關係表達式:[(7.2-fc)/3.0]2<L/W<[(8.15-fc)/2.7]2 In more detail, the thin film common mode filter 1 is configured such that the first coil 211, the second coil 231, the third coil 251, and the fourth coil 271 having a rectangular spiral shape are disposed on an insulating substrate of a non-magnetic material, and It is preferably an alumina substrate, and therefore can satisfy the following relational expression: [(7.2-fc)/3.0] 2 <L/W<[(8.15-fc)/2.7] 2
另外,在本具體實施例中,第一導體層21、第二導體層23、第三導體層25及第四導體層27可經由薄膜金屬沉積、黃光微影及蝕刻等多個程序,或藉由電鍍程序、濺鍍程序被形成,且第一導體層21、第二導體層23、第三導體層25及第四導體層27可選擇銀(Ag)、鈀(Pd)、鋁(Al)、鉻(Cr)、鎳(Ni)、鈦(Ti)、金(Au)、銅(Cu)或鉑(Pt)作為 導體之材料。 In addition, in the specific embodiment, the first conductor layer 21, the second conductor layer 23, the third conductor layer 25, and the fourth conductor layer 27 may be subjected to a plurality of processes such as thin film metal deposition, yellow light lithography, and etching, or by A plating process and a sputtering process are formed, and the first conductor layer 21, the second conductor layer 23, the third conductor layer 25, and the fourth conductor layer 27 may be selected from silver (Ag), palladium (Pd), aluminum (Al), Chromium (Cr), nickel (Ni), titanium (Ti), gold (Au), copper (Cu) or platinum (Pt) as The material of the conductor.
第一電氣絕緣層22、第二電氣絕緣層24及第三電氣絕緣層26可選擇聚亞醯胺(polyimide)、環氧樹脂(epoxy resin)或苯並環丁烯樹脂(benzocyclobutene;BCB)作為電氣絕緣之材料,該些材料具有較佳之電氣及機械特性,並可藉由旋塗程序被形成。磁性材料層40可以是磁性基材或混合磁性粉末之膠體,並同樣藉由旋塗程序而被形成,其中混合磁性粉末之膠體可為磁性粉末與聚亞醯胺(polyimide)、環氧樹脂(epoxy resin)、苯並環丁烯樹脂(BCB)或其他高分子聚合物混合所形成。 The first electrical insulating layer 22, the second electrical insulating layer 24 and the third electrical insulating layer 26 may be selected from polyimide, epoxy resin or benzocyclobutene (BCB). Electrically insulating materials which have preferred electrical and mechanical properties and which can be formed by a spin coating process. The magnetic material layer 40 may be a magnetic substrate or a colloid of a mixed magnetic powder, and is also formed by a spin coating process, wherein the colloid of the mixed magnetic powder may be a magnetic powder and a polyimide, an epoxy resin ( Epoxy resin), benzocyclobutene resin (BCB) or other high molecular polymer mixture.
請參閱圖3,其顯示本發明之薄膜式共模濾波器1’之第二實施例之立體分解圖。與前一實施例的不同之處在於,所述薄膜式共模濾波器1’包括一第一磁性材料層40A及一第二磁性材料層40B,其中第一磁性材料層40A透過絕緣層30批覆於線圈主體堆疊結構20上,而第二磁性材料層40B設置於線圈主體堆疊結構20與非磁性材質之絕緣基板10之間。 Referring to Figure 3, there is shown a perspective exploded view of a second embodiment of a thin film common mode filter 1' of the present invention. The difference from the previous embodiment is that the thin film common mode filter 1' includes a first magnetic material layer 40A and a second magnetic material layer 40B, wherein the first magnetic material layer 40A is pasted through the insulating layer 30. On the coil body stack structure 20, the second magnetic material layer 40B is disposed between the coil body stack structure 20 and the non-magnetic material insulating substrate 10.
更詳細地說,第一磁性材料層40A設置於絕緣層30上且批覆於第四導體層27,第二磁性材料層40B設置於第一導體層21與非磁性材質之絕緣基板10之間,可達成較高之共模雜訊濾除效果。同樣地,所述薄膜式共模濾波器1’能夠精確控制其產生之截止頻率,且滿足下列之關係表達式:[(7.2-fc)/3.0]2<L/W<[(8.15-fc)/2.7]2 其中,L為第一線圈211、第二線圈231、第三線圈251及第四線圈271的總長度,W為第一線圈211、第二線圈231、第三線圈251及第四線圈271的寬度,fc為差模訊號的截止頻率,且截止頻率大致介於2.5至5.5 MHz之間。 In more detail, the first magnetic material layer 40A is disposed on the insulating layer 30 and is disposed on the fourth conductive layer 27, and the second magnetic material layer 40B is disposed between the first conductive layer 21 and the non-magnetic insulating substrate 10. A higher common mode noise filtering effect can be achieved. Similarly, the thin film common mode filter 1' can precisely control the cutoff frequency it produces, and satisfies the following relational expression: [(7.2-fc)/3.0] 2 <L/W<[(8.15-fc And 2.7] 2, where L is the total length of the first coil 211, the second coil 231, the third coil 251, and the fourth coil 271, and W is the first coil 211, the second coil 231, the third coil 251, and the The width of the four coils 271, fc is the cutoff frequency of the differential mode signal, and the cutoff frequency is approximately between 2.5 and 5.5 MHz.
請參閱圖4,其顯示本發明之薄膜式共模濾波器1”之第三實施例之立體分解圖。所述薄膜式共模濾波器1”還包括多個磁性部50。具體而言,該等磁性部50為鐵氧體磁芯(Ferrite core),其具有磁導率高,在廣泛的頻率範圍內具有高電阻和渦流損耗小等優點。 Referring to Figure 4, there is shown a perspective exploded view of a third embodiment of a thin film common mode filter 1" of the present invention. The thin film common mode filter 1" further includes a plurality of magnetic portions 50. Specifically, the magnetic portions 50 are ferrite cores having a high magnetic permeability and high resistance and small eddy current loss over a wide frequency range.
另外,第一電氣絕緣層22、第二電氣絕緣層24及第三電氣絕緣層26上各開設有一通孔222、243、262,該等磁性部50通過第一電氣絕緣層22、第二電氣絕緣層24及第三電氣絕緣層26之通孔222、243、262而設置於第一線圈211、第二線圈231、第三線圈251及第四線圈271的內側,以加強薄膜式共模濾波器1”的安定性,並可增加各電氣絕緣層之間的磁通路區,藉此增加薄膜式共模濾波器1”之阻抗。 In addition, a through hole 222, 243, 262 is defined in each of the first electrical insulating layer 22, the second electrical insulating layer 24 and the third electrical insulating layer 26, and the magnetic portions 50 pass through the first electrical insulating layer 22 and the second electrical The through holes 222, 243, and 262 of the insulating layer 24 and the third electrical insulating layer 26 are disposed inside the first coil 211, the second coil 231, the third coil 251, and the fourth coil 271 to enhance the thin film common mode filtering. The stability of the device 1" can increase the magnetic path region between the electrical insulating layers, thereby increasing the impedance of the thin film common mode filter 1".
此外,薄膜式共模濾波器1”同樣能夠精確控制其產生之截止頻率,滿足下列之關係表達式:[(7.2-fc)/3.0]2<L/W<[(8.15-fc)/2.7]2其中,L為第一線圈211、第二線圈231、第三線圈251及第四線圈271的總長度,W為第一線圈211、第二線圈231、第三線圈251及第四線圈271的寬度,fc為差 模訊號的截止頻率,且截止頻率大致介於2.5至5.5 MHz之間,符合特定之可攜式電子裝置的需求。 In addition, the thin film common mode filter 1" can also precisely control the cutoff frequency it produces, satisfying the following relational expression: [(7.2-fc)/3.0] 2 <L/W<[(8.15-fc)/2.7 ] 2 where, L is a first coil 211, second coil 231, the total length of the third coil 251 and fourth coil 271, W is a first coil 211, second coil 231, third coil 251 and fourth coil 271 The width, fc is the cutoff frequency of the differential mode signal, and the cutoff frequency is roughly between 2.5 and 5.5 MHz, which meets the requirements of specific portable electronic devices.
綜上所述,本發明之薄膜式共模濾波器中,電性串聯之第一線圈及第三線圈能夠彼此磁性耦合以消除共模雜訊,且電性串聯之第二線圈及第四線圈亦能達到相同之功效。藉此,所述薄膜式共模濾波器能夠在不增加導體層中線圈之捲繞數的情況下加強共模組抗的能力,且薄膜式共模濾波器的結構能夠更佳薄型化,以應用於各種微型化之可攜型電子裝置。 In summary, in the thin film common mode filter of the present invention, the first coil and the third coil electrically connected in series can be magnetically coupled to each other to eliminate common mode noise, and the second coil and the fourth coil electrically connected in series Can also achieve the same effect. Thereby, the thin film common mode filter can enhance the resistance of the common module without increasing the number of windings of the coil in the conductor layer, and the structure of the thin film common mode filter can be further thinned, It is applied to various miniaturized portable electronic devices.
再者,所述薄膜式共模濾波器將各導體層及其線圈設置在具高介電常數之非磁性材質之絕緣基板上,因此能夠精確控制其共模阻抗,使產生之截止頻率能夠被精確控制在一有效範圍內,能夠滿足一關係表達式:[(7.2-fc)/3.0]2<L/W<[(8.15-fc)/2.7]2,且截止頻率fc大致介於2.5至5.5 MHz之間,符合特定之可攜式電子裝置的需求。 Furthermore, the thin film common mode filter has the conductor layers and their coils disposed on an insulating substrate having a high dielectric constant of a non-magnetic material, so that the common mode impedance can be precisely controlled, so that the cutoff frequency can be Precise control within a valid range can satisfy a relational expression: [(7.2-fc)/3.0] 2 <L/W<[(8.15-fc)/2.7] 2 , and the cutoff frequency fc is approximately 2.5 to Between 5.5 MHz, it meets the needs of specific portable electronic devices.
1、1’、1”‧‧‧薄膜式共模濾波器 1, 1', 1" ‧ ‧ film common mode filter
10‧‧‧非磁性材質之絕緣基板 10‧‧‧Insulating substrate of non-magnetic material
20‧‧‧線圈主體堆疊結構 20‧‧‧ coil body stack structure
21‧‧‧第一導體層 21‧‧‧First conductor layer
211‧‧‧第一線圈 211‧‧‧First coil
2111‧‧‧內端部 2111‧‧‧Inside
2112‧‧‧外端部 2112‧‧‧Outer end
212‧‧‧第一電極 212‧‧‧First electrode
213‧‧‧第二電極 213‧‧‧second electrode
214‧‧‧第三電極 214‧‧‧ third electrode
215‧‧‧第四電極 215‧‧‧fourth electrode
22‧‧‧第一電氣絕緣層 22‧‧‧First electrical insulation
221‧‧‧第一連接孔 221‧‧‧First connection hole
222‧‧‧通孔 222‧‧‧through hole
23‧‧‧第二導體層 23‧‧‧Second conductor layer
231‧‧‧第二線圈 231‧‧‧second coil
2311‧‧‧內端部 2311‧‧‧Inside
2312‧‧‧外端部 2312‧‧‧Outer end
232‧‧‧第一電極 232‧‧‧first electrode
233‧‧‧第二電極 233‧‧‧second electrode
234‧‧‧第三電極 234‧‧‧ third electrode
235‧‧‧第四電極 235‧‧‧fourth electrode
24‧‧‧第二電氣絕緣層 24‧‧‧Second electrical insulation
241‧‧‧第二連接孔 241‧‧‧Second connection hole
242‧‧‧第三連接孔 242‧‧‧ third connection hole
243‧‧‧通孔 243‧‧‧through hole
25‧‧‧第三導體層 25‧‧‧3rd conductor layer
251‧‧‧第三線圈 251‧‧‧third coil
2511‧‧‧內端部 2511‧‧‧Inside
2512‧‧‧外端部 2512‧‧‧Outer end
252‧‧‧第一電極 252‧‧‧First electrode
253‧‧‧第二電極 253‧‧‧second electrode
254‧‧‧第三電極 254‧‧‧ third electrode
255‧‧‧第四電極 255‧‧‧fourth electrode
26‧‧‧第三電氣絕緣層 26‧‧‧ Third electrical insulation
261‧‧‧第四連接孔 261‧‧‧fourth connection hole
262‧‧‧通孔 262‧‧‧through hole
27‧‧‧第四導體層 27‧‧‧4th conductor layer
271‧‧‧第四線圈 271‧‧‧fourth coil
2711‧‧‧內端部 2711‧‧‧Inside
2712‧‧‧外端部 2712‧‧‧Outer end
272‧‧‧第一電極 272‧‧‧First electrode
273‧‧‧第二電極 273‧‧‧second electrode
274‧‧‧第三電極 274‧‧‧ third electrode
275‧‧‧第四電極 275‧‧‧fourth electrode
30‧‧‧絕緣層 30‧‧‧Insulation
40‧‧‧磁性材料層 40‧‧‧ Magnetic material layer
40A‧‧‧第一磁性材料層 40A‧‧‧First magnetic material layer
40B‧‧‧第二磁性材料層 40B‧‧‧Second magnetic material layer
50‧‧‧磁性部 50‧‧‧Magnetic Department
G1、G2‧‧‧趨勢線 G1, G2‧‧‧ trend line
圖1為本發明之薄膜式共模濾波器之具體實施例之立體分解圖;圖2為本發明之薄膜式共模濾波器產生之截止頻率對線圈之總長度除以寬度之關係示意圖;圖3為本發明之薄膜式共模濾波器之另一實施例之立體分解圖;以及圖4為本發明之薄膜式共模濾波器之又一實施例之立體分解圖。 1 is a perspective exploded view of a specific embodiment of a thin film common mode filter of the present invention; FIG. 2 is a schematic diagram showing the relationship between the cutoff frequency generated by the thin film common mode filter of the present invention and the total length of the coil divided by the width; 3 is an exploded perspective view of another embodiment of the thin film common mode filter of the present invention; and FIG. 4 is an exploded perspective view of still another embodiment of the thin film common mode filter of the present invention.
1‧‧‧薄膜式共模濾波器 1‧‧‧Thin-film common mode filter
10‧‧‧非磁性材質之絕緣基板 10‧‧‧Insulating substrate of non-magnetic material
20‧‧‧線圈主體堆疊結構 20‧‧‧ coil body stack structure
21‧‧‧第一導體層 21‧‧‧First conductor layer
211‧‧‧第一線圈 211‧‧‧First coil
2111‧‧‧內端部 2111‧‧‧Inside
2112‧‧‧外端部 2112‧‧‧Outer end
212‧‧‧第一電極 212‧‧‧First electrode
213‧‧‧第二電極 213‧‧‧second electrode
214‧‧‧第三電極 214‧‧‧ third electrode
215‧‧‧第四電極 215‧‧‧fourth electrode
22‧‧‧第一電氣絕緣層 22‧‧‧First electrical insulation
221‧‧‧第一連接孔 221‧‧‧First connection hole
23‧‧‧第二導體層 23‧‧‧Second conductor layer
231‧‧‧第二線圈 231‧‧‧second coil
2311‧‧‧內端部 2311‧‧‧Inside
2312‧‧‧外端部 2312‧‧‧Outer end
232‧‧‧第一電極 232‧‧‧first electrode
233‧‧‧第二電極 233‧‧‧second electrode
234‧‧‧第三電極 234‧‧‧ third electrode
235‧‧‧第四電極 235‧‧‧fourth electrode
24‧‧‧第二電氣絕緣層 24‧‧‧Second electrical insulation
241‧‧‧第二連接孔 241‧‧‧Second connection hole
242‧‧‧第三連接孔 242‧‧‧ third connection hole
25‧‧‧第三導體層 25‧‧‧3rd conductor layer
251‧‧‧第三線圈 251‧‧‧third coil
2511‧‧‧內端部 2511‧‧‧Inside
2512‧‧‧外端部 2512‧‧‧Outer end
252‧‧‧第一電極 252‧‧‧First electrode
253‧‧‧第二電極 253‧‧‧second electrode
254‧‧‧第三電極 254‧‧‧ third electrode
255‧‧‧第四電極 255‧‧‧fourth electrode
26‧‧‧第三電氣絕緣層 26‧‧‧ Third electrical insulation
261‧‧‧第四連接孔 261‧‧‧fourth connection hole
27‧‧‧第四導體層 27‧‧‧4th conductor layer
271‧‧‧第四線圈 271‧‧‧fourth coil
2711‧‧‧內端部 2711‧‧‧Inside
2712‧‧‧外端部 2712‧‧‧Outer end
272‧‧‧第一電極 272‧‧‧First electrode
273‧‧‧第二電極 273‧‧‧second electrode
274‧‧‧第三電極 274‧‧‧ third electrode
275‧‧‧第四電極 275‧‧‧fourth electrode
30‧‧‧絕緣層 30‧‧‧Insulation
40‧‧‧磁性材料層 40‧‧‧ Magnetic material layer
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101127455A TWI445021B (en) | 2012-07-30 | 2012-07-30 | Thin film type common mode filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101127455A TWI445021B (en) | 2012-07-30 | 2012-07-30 | Thin film type common mode filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201405595A true TW201405595A (en) | 2014-02-01 |
| TWI445021B TWI445021B (en) | 2014-07-11 |
Family
ID=50550100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101127455A TWI445021B (en) | 2012-07-30 | 2012-07-30 | Thin film type common mode filter |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI445021B (en) |
-
2012
- 2012-07-30 TW TW101127455A patent/TWI445021B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI445021B (en) | 2014-07-11 |
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