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TW201404028A - Circuit and method for rectifying - Google Patents

Circuit and method for rectifying Download PDF

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Publication number
TW201404028A
TW201404028A TW102124035A TW102124035A TW201404028A TW 201404028 A TW201404028 A TW 201404028A TW 102124035 A TW102124035 A TW 102124035A TW 102124035 A TW102124035 A TW 102124035A TW 201404028 A TW201404028 A TW 201404028A
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Taiwan
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high frequency
electronic switch
circuit
frequency electronic
driving
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TW102124035A
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Chinese (zh)
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Bin Zhao
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O2Micro Inc
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Publication of TW201404028A publication Critical patent/TW201404028A/en

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Abstract

A circuit for rectifying includes a first detection circuit coupled to an end of a secondary winding of a transformer; a first high frequency electronic switch coupled to said first detection circuit and a ground wire; a second detection circuit coupled to another end of said secondary winding; a second high frequency electronic switch coupled to said second detection circuit and said ground wire; a first drive circuit coupled to said first high frequency electronic switch and said first detection circuit configured to control said first high frequency electronic switch based on a first drive current generated by said first detection circuit on a current flowing through said first high frequency electronic switch; and a second drive ciruit coupled to said second high frequency electronic switch and said second detection circuit configured to control said second high frequency electronic switch based on a second drive current generated by said second detection circuit on a current flowing through said second high frequency electronic switch.

Description

整流電路及整流方法 Rectifier circuit and rectification method

本發明係有關電子技術領域,特別關於一種整流電路及整流方法。 The invention relates to the field of electronic technology, and in particular to a rectifier circuit and a rectification method.

圖1為現有技術中全波整流電路100的電路示意圖。在全波整流電路100中,變壓器的次級繞組T1通常為中心抽頭式,對於大變壓器而言,由於電流較大,中心抽頭式的繞組會導致線包較粗,因此使變壓器的結構較為複雜,工藝性不好。另一方面,現有技術中的整流電路多採用整流二極體,例如圖1中之全波整流電路100採用的整流二極體D1和整流二極體D2,由於整流二極體的損耗較大,尤其在低壓大電流的情况下損耗更為突出,因此導致整個全波整流電路100的損耗較大。 FIG. 1 is a circuit diagram of a full-wave rectification circuit 100 in the prior art. In the full-wave rectifying circuit 100, the secondary winding T1 of the transformer is usually a center tap type. For a large transformer, the center-tapped winding causes a thicker wire package due to a larger current, thereby making the structure of the transformer more complicated. The craftsmanship is not good. On the other hand, the rectifying circuit in the prior art mostly uses a rectifying diode, such as the rectifying diode D1 and the rectifying diode D2 used in the full-wave rectifying circuit 100 of FIG. 1, because the loss of the rectifying diode is large. The loss is more prominent especially in the case of low voltage and large current, thus causing a large loss of the entire full-wave rectifier circuit 100.

本發明的目的為提供一種整流電路,包括:一第一檢測電路,耦接至一變壓器的一次級繞組的一端;一第一高頻電子開關,耦接在該第一檢測電路和一接地線之間;一第二檢測電路,耦接至該次級繞組的另一端;一第二高頻電子開關,耦接在該第二檢測電路和該接地線之間;一第一驅動電路,耦接至該第一檢測電路和該第一高頻電子開關,根據該第一檢測電路基於流過該第一高頻電子開關的一電流而產生的一第一驅動電流,控制該第一高頻電子開關;以及一第二驅動電路,耦接至該第二檢測電路和該第二高頻電子開關,根據該第二檢測電路基於流過該第二高頻電子開關的一電流而產生的一第二驅動電流,控制該第二高頻電子開關。 An object of the present invention is to provide a rectifier circuit comprising: a first detection circuit coupled to one end of a primary winding of a transformer; a first high frequency electronic switch coupled to the first detection circuit and a ground line a second detection circuit coupled to the other end of the secondary winding; a second high frequency electronic switch coupled between the second detection circuit and the ground line; a first drive circuit coupled Connecting to the first detecting circuit and the first high frequency electronic switch, controlling the first high frequency according to the first driving circuit generated by the first detecting circuit based on a current flowing through the first high frequency electronic switch An electronic switch; and a second driving circuit coupled to the second detecting circuit and the second high frequency electronic switch, according to the second detecting circuit generating a current based on a current flowing through the second high frequency electronic switch A second drive current controls the second high frequency electronic switch.

本發明還提供一種整流方法,包括:一第一檢測電路感應流過一第一高頻電子開關的一電流,根據該電流產生一第一驅動電流;一第一驅動電路根據該第一驅動電流控制該第一高頻電子開關;一第二檢測電 路感應流過一第二高頻電子開關的一電流,根據該電流產生一第二驅動電流;以及一第二驅動電路根據該第二驅動電流控制該第二高頻電子開關。 The present invention also provides a rectification method, comprising: a first detection circuit inducing a current flowing through a first high frequency electronic switch, generating a first driving current according to the current; and a first driving circuit according to the first driving current Controlling the first high frequency electronic switch; a second detecting power The circuit induces a current flowing through a second high frequency electronic switch to generate a second driving current according to the current; and a second driving circuit controls the second high frequency electronic switch according to the second driving current.

1‧‧‧變壓器 1‧‧‧Transformer

2‧‧‧濾波電路 2‧‧‧Filter circuit

31‧‧‧第一檢測電路 31‧‧‧First detection circuit

32‧‧‧第二檢測電路 32‧‧‧Second detection circuit

41‧‧‧第一高頻電子開關 41‧‧‧First high frequency electronic switch

42‧‧‧第二高頻電子開關 42‧‧‧Second high frequency electronic switch

51‧‧‧第一驅動電路 51‧‧‧First drive circuit

52‧‧‧第二驅動電路 52‧‧‧Second drive circuit

100‧‧‧全波整流電路 100‧‧‧Full-wave rectifier circuit

200‧‧‧整流電路 200‧‧‧Rectifier circuit

300‧‧‧整流電路 300‧‧‧Rectifier circuit

511‧‧‧第一充電模組 511‧‧‧First charging module

512‧‧‧第一控制模組 512‧‧‧First Control Module

513‧‧‧第一驅動模組 513‧‧‧First drive module

521‧‧‧第二充電模組 521‧‧‧Second charging module

522‧‧‧第二控制模組 522‧‧‧Second control module

523‧‧‧第二驅動模組 523‧‧‧Second drive module

600‧‧‧流程圖 600‧‧‧ Flowchart

602~608‧‧‧步驟 602~608‧‧‧Steps

以下結合附圖和具體實施例對本發明的技術方法進行詳細的描述,以使本發明的特徵和優點更為明顯。其中:圖1所示為現有技術中的全波整流電路的電路示意圖;圖2所示為根據本發明一實施例之整流電路的結構示意圖;圖3所示為根據本發明另一實施例之整流電路的電路結構圖;圖4A所示為根據本發明一實施例之第一驅動電路的結構示意圖;圖4B所示為根據本發明一實施例之第二驅動電路的結構示意圖;圖5所示為根據本發明一實施例之第二驅動電路的電路結構圖;以及圖6所示為根據本發明一實施例之整流方法的流程示意圖。 The technical method of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments to make the features and advantages of the present invention more obvious. 1 is a schematic circuit diagram of a full-wave rectification circuit in the prior art; FIG. 2 is a schematic structural view of a rectification circuit according to an embodiment of the present invention; and FIG. 3 is a schematic diagram of another embodiment of the present invention. FIG. 4A is a schematic structural diagram of a first driving circuit according to an embodiment of the present invention; FIG. 4B is a schematic structural view of a second driving circuit according to an embodiment of the present invention; A circuit configuration diagram of a second driving circuit according to an embodiment of the present invention; and FIG. 6 is a flow chart showing a rectification method according to an embodiment of the present invention.

以下將對本發明的實施例給出詳細的說明。雖然本發明將結合實施例進行闡述,但應理解這並非意指將本發明限定於這些實施例。相反地,本發明意在涵蓋由後附申請專利範圍所界定的本發明精神和範圍內所定義的各種變化、修改和均等物。 A detailed description of the embodiments of the present invention will be given below. While the invention will be described in conjunction with the embodiments, it is understood that the invention is not limited to the embodiments. Rather, the invention is to cover various modifications, equivalents, and equivalents of the invention as defined by the scope of the appended claims.

此外,在以下對本發明的詳細描述中,為了提供針對本發明的完全的理解,提供了大量的具體細節。然而,於本技術領域中具有通常知識者將理解,沒有這些具體細節,本發明同樣可以實施。在另外的一些實例中,對於大家熟知的方法、程序、元件和電路未作詳細描述,以便於凸顯本發明之主旨。 In addition, in the following detailed description of the embodiments of the invention However, it will be understood by those of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known methods, procedures, components, and circuits have not been described in detail in order to facilitate the invention.

圖2所示為根據本發明一實施例之整流電路200的結構示意圖。整流電路200包括:第一檢測電路31、第二檢測電路32、第一高頻電子開關41、第二高頻電子開關42、第一驅動電路51以及第二驅動電路52。其中,第一檢測電路31耦接至變壓器1的次級繞組的一端、第一高頻電子開關41及第一驅動電路51。第一高頻電子開關41耦接至第一驅動電路51。第二檢測電路32的一端耦接至變壓器1的次級繞組的另一端、第二高頻電子開關42及第二驅動電路52。 第二高頻電子開關42耦接至第一驅動電路52。第一檢測電路31感應流過第一高頻電子開關41的電流,產生第一驅動電流,並將產生的第一驅動電流發送至第一驅動電路51。第一驅動電路51根據接收到的第一驅動電流控制第一高頻電子開關41的導通或截止。第二檢測電路32感應流過第二高頻電子開關42的電流,產生第二驅動電流,並將產生的第二驅動電流發送至第二驅動電路52。第二驅動電路52根據接收到的第二驅動電流控制第二高頻電子開關42的導通或截止。 2 is a block diagram showing the structure of a rectifier circuit 200 in accordance with an embodiment of the present invention. The rectifier circuit 200 includes a first detection circuit 31, a second detection circuit 32, a first high frequency electronic switch 41, a second high frequency electronic switch 42, a first drive circuit 51, and a second drive circuit 52. The first detecting circuit 31 is coupled to one end of the secondary winding of the transformer 1 , the first high frequency electronic switch 41 and the first driving circuit 51 . The first high frequency electronic switch 41 is coupled to the first driving circuit 51. One end of the second detecting circuit 32 is coupled to the other end of the secondary winding of the transformer 1 , the second high frequency electronic switch 42 and the second driving circuit 52 . The second high frequency electronic switch 42 is coupled to the first driving circuit 52. The first detecting circuit 31 senses a current flowing through the first high frequency electronic switch 41, generates a first driving current, and transmits the generated first driving current to the first driving circuit 51. The first driving circuit 51 controls the on or off of the first high frequency electronic switch 41 in accordance with the received first driving current. The second detecting circuit 32 senses a current flowing through the second high frequency electronic switch 42, generates a second driving current, and transmits the generated second driving current to the second driving circuit 52. The second driving circuit 52 controls the on or off of the second high frequency electronic switch 42 in accordance with the received second driving current.

較佳地,在一實施例中,整流電路200還可以包括濾波電路2,耦接至變壓器1的次級繞組的兩端和接地線。濾波電路2用於减少整流電路的漣波電流。 Preferably, in an embodiment, the rectifier circuit 200 may further include a filter circuit 2 coupled to both ends of the secondary winding of the transformer 1 and a ground line. The filter circuit 2 is for reducing the chopping current of the rectifier circuit.

圖3所示為根據本發明另一實施例之整流電路300的電路結構圖。在整流電路300中,較佳地,在一實施例中,第一高頻電子開關41和第二高頻電子開關42分別為第一金屬氧化物半導體場效電晶體Q1和第二金屬氧化物半導體場效電晶體Q2,第一檢測電路31和第二檢測電路32分別為第一電流比流器CT1和第二電流比流器CT2,第一驅動電路51和第二驅動電路52的結構相同,其中,第一驅動電路51和第二驅動電路52的結構在圖3中未示出。 FIG. 3 is a circuit configuration diagram of a rectifier circuit 300 according to another embodiment of the present invention. In the rectifying circuit 300, preferably, in an embodiment, the first high frequency electronic switch 41 and the second high frequency electronic switch 42 are a first metal oxide semiconductor field effect transistor Q1 and a second metal oxide, respectively. The semiconductor field effect transistor Q2, the first detecting circuit 31 and the second detecting circuit 32 are the first current comparator CT1 and the second current comparator CT2, respectively, and the first driving circuit 51 and the second driving circuit 52 have the same structure. The structure of the first drive circuit 51 and the second drive circuit 52 is not shown in FIG.

具體而言,變壓器1的次級繞組T1的正極耦接至第一濾波電感L1及第一電流比流器CT1的一端。第一電流比流器CT1的另一端耦接至第一金屬氧化物半導體場效電晶體Q1的汲極。第一電流比流器CT1的電感具有兩個端子(即A5端子和A6端子),分別耦接至第一驅動電路51(圖3中未示出)的兩個輸入端。第一金屬氧化物半導體場效電晶體Q1的閘極和源極分別耦接至第一驅動電路51(圖3中未示出)的輸出端和接地線。 Specifically, the anode of the secondary winding T1 of the transformer 1 is coupled to one end of the first filter inductor L1 and the first current comparator CT1. The other end of the first current comparator CT1 is coupled to the drain of the first metal oxide semiconductor field effect transistor Q1. The inductance of the first current comparator CT1 has two terminals (ie, A5 terminal and A6 terminal) coupled to the two input terminals of the first driving circuit 51 (not shown in FIG. 3). The gate and the source of the first metal oxide semiconductor field effect transistor Q1 are respectively coupled to the output terminal of the first driving circuit 51 (not shown in FIG. 3) and the ground line.

變壓器1的次級繞組T1的負極耦接至第二濾波電感L2及第二電流比流器CT2的一端。第二電流比流器CT2的另一端耦接至第二金屬氧化物半導體場效電晶體Q2的汲極。第二電流比流器CT2的電感具有兩個端子(即B5端子和B6端子),分別耦接至第二驅動電路52(圖3中未示出)的兩個輸入端。第二金屬氧化物半導體 場效電晶體Q2的閘極和源極分別耦接至第二驅動電路52(圖3中未示出)的輸出端和接地線。為便於描述,第一金屬氧化物半導體場效電晶體Q1的閘極也稱為A3端子,第二管金屬氧化物半導體場效電晶體Q2的閘極也稱為B3端子。 The negative pole of the secondary winding T1 of the transformer 1 is coupled to one end of the second filter inductor L2 and the second current comparator CT2. The other end of the second current comparator CT2 is coupled to the drain of the second metal oxide semiconductor field effect transistor Q2. The inductance of the second current comparator CT2 has two terminals (ie, B5 terminal and B6 terminal) coupled to the two input terminals of the second driving circuit 52 (not shown in FIG. 3). Second metal oxide semiconductor The gate and the source of the field effect transistor Q2 are respectively coupled to the output terminal of the second driving circuit 52 (not shown in FIG. 3) and the ground line. For convenience of description, the gate of the first metal oxide semiconductor field effect transistor Q1 is also referred to as an A3 terminal, and the gate of the second transistor metal oxide semiconductor field effect transistor Q2 is also referred to as a B3 terminal.

較佳地,濾波電路2包括第一電感L1、第二電感L2以及電容C1。第一電感L1與電容C1串聯在變壓器的次級繞組T1的正極和接地線之間,即第一電感L1的一端耦接變壓器的次級繞組T1的正極,另一端耦接電容C1的正極,電容C1的負極耦接至接地線;第二電感L2的一端耦接至變壓器的次級繞組T1的負極,另一端耦接至第一電感L1及電容C1。 Preferably, the filter circuit 2 includes a first inductor L1, a second inductor L2, and a capacitor C1. The first inductor L1 and the capacitor C1 are connected in series between the anode of the secondary winding T1 of the transformer and the ground line, that is, one end of the first inductor L1 is coupled to the anode of the secondary winding T1 of the transformer, and the other end is coupled to the anode of the capacitor C1. The second inductor L2 is coupled to the negative pole of the secondary winding T1 of the transformer, and the other end is coupled to the first inductor L1 and the capacitor C1.

圖4A所示為根據本發明一實施例之驅動電路51的結構示意圖。圖4A將結合圖3描述。第一驅動電路51包括第一充電模組511、第一控制模組512以及第一驅動模組513。 4A is a block diagram showing the structure of a driving circuit 51 according to an embodiment of the present invention. Figure 4A will be described in conjunction with Figure 3. The first driving circuit 51 includes a first charging module 511 , a first control module 512 , and a first driving module 513 .

第一充電模組511的兩個輸入端分別耦接至第一電流比流器CT1的A5端子及A6端子,根據第一驅動電流產生使第一金屬氧化物半導體場效電晶體Q1導通的電荷,並儲存電荷。第一驅動模組513的輸出端耦接至第一金屬氧化物半導體場效電晶體Q1的A3端子。第一控制模組512耦接至第一電流比流器CT1、第一充電模組511和第一驅動模組513,根據第一驅動電流控制第一驅動模組,使得當流過第一金屬氧化物半導體場效電晶體Q1的電流從接地線流向第一電流比流器CT1時,第一驅動模組513將第一充電模組511儲存的電荷輸出至第一金屬氧化物半導體場效電晶體Q1的閘極,進而使第一金屬氧化物半導體場效電晶體Q1導通;或者當流過第一金屬氧化物半導體場效電晶體Q1的電流從第一電流比流器CT1流向接地線時,第一驅動模組513將第一金屬氧化物半導體場效電晶體Q1的閘極接至接地線,進而使第一金屬氧化物半導體場效電晶體Q1截止。 The two input ends of the first charging module 511 are respectively coupled to the A5 terminal and the A6 terminal of the first current comparator CT1, and generate a charge for turning on the first metal oxide semiconductor field effect transistor Q1 according to the first driving current. And store the charge. The output end of the first driving module 513 is coupled to the A3 terminal of the first metal oxide semiconductor field effect transistor Q1. The first control module 512 is coupled to the first current comparator CT1, the first charging module 511, and the first driving module 513, and controls the first driving module according to the first driving current, so that when flowing through the first metal When the current of the oxide semiconductor field effect transistor Q1 flows from the ground line to the first current comparator CT1, the first driving module 513 outputs the charge stored in the first charging module 511 to the first metal oxide semiconductor field effect power. The gate of the crystal Q1, thereby turning on the first metal oxide semiconductor field effect transistor Q1; or when the current flowing through the first metal oxide semiconductor field effect transistor Q1 flows from the first current comparator CT1 to the ground line The first driving module 513 connects the gate of the first metal oxide semiconductor field effect transistor Q1 to the ground line, thereby turning off the first metal oxide semiconductor field effect transistor Q1.

圖4B所示為根據本發明一實施例之驅動電路52的結構示意圖。圖4B將結合圖3描述。第二驅動電路52包括第二充電模組521、第二控制模組522以及第二驅動模組523。 4B is a block diagram showing the structure of a driving circuit 52 according to an embodiment of the invention. Figure 4B will be described in conjunction with Figure 3. The second driving circuit 52 includes a second charging module 521 , a second control module 522 , and a second driving module 523 .

第二充電模組521的兩個輸入端分別耦接至第二電流比流器CT2的B5端子及B6端子,根據第二驅動電流產生使第二金屬氧化物半導體場效電晶體Q2導通的電荷,並儲存產生的電荷。第二驅動模組523的輸出端耦接至第二金屬氧化物半導體場效電晶體Q2的B3端子。第二控制模組522耦接至第二電流比流器CT2、第二充電模組521以及第二驅動模組523,根據第二驅動電流控制第二驅動模組523,以使得當流過第二金屬氧化物半導體場效電晶體Q2的電流從接地線流向第二電流比流器CT2時,第二驅動模組523將第二充電模組521儲存的電荷輸出至第二金屬氧化物半導體場效電晶體Q2的閘極,進而使第二金屬氧化物半導體場效電晶體Q2導通;或者當流過第二金屬氧化物半導體場效電晶體Q2的電流從第二電流比流器CT2流向接地線時,第二驅動模組523將第二金屬氧化物半導體場效電晶體Q2的閘極接至接地線,進而使第二金屬氧化物半導體場效電晶體Q2截止。 The two input ends of the second charging module 521 are respectively coupled to the B5 terminal and the B6 terminal of the second current comparator CT2, and generate a charge for turning on the second metal oxide semiconductor field effect transistor Q2 according to the second driving current. And store the generated charge. The output end of the second driving module 523 is coupled to the B3 terminal of the second metal oxide semiconductor field effect transistor Q2. The second control module 522 is coupled to the second current comparator CT2, the second charging module 521, and the second driving module 523, and controls the second driving module 523 according to the second driving current, so that when flowing through the When the current of the second metal oxide semiconductor field effect transistor Q2 flows from the ground line to the second current comparator CT2, the second driving module 523 outputs the charge stored by the second charging module 521 to the second metal oxide semiconductor field. The gate of the effect transistor Q2, which in turn causes the second metal oxide semiconductor field effect transistor Q2 to be turned on; or when the current flowing through the second metal oxide semiconductor field effect transistor Q2 flows from the second current comparator CT2 to the ground In the case of the line, the second driving module 523 connects the gate of the second metal oxide semiconductor field effect transistor Q2 to the ground line, thereby turning off the second metal oxide semiconductor field effect transistor Q2.

圖5所示為根據本發明又一實施例之驅動電路52的電路結構圖。圖5將結合圖2至圖4進行說明。如圖5所示,第二驅動模組523的電路為推挽電路,包括電晶體Q102、電晶體Q103、電阻R104以及電阻R105。第二控制模組522包括電晶體Q101和整流二極體D102。第二充電模組521包括整流二極體D104、電容C101、電阻R102、整流二極體D103、整流二極體D101以及電阻R101。 FIG. 5 is a circuit configuration diagram of a driving circuit 52 according to still another embodiment of the present invention. Fig. 5 will be explained in conjunction with Figs. 2 to 4. As shown in FIG. 5, the circuit of the second driving module 523 is a push-pull circuit, and includes a transistor Q102, a transistor Q103, a resistor R104, and a resistor R105. The second control module 522 includes a transistor Q101 and a rectifying diode D102. The second charging module 521 includes a rectifying diode D104, a capacitor C101, a resistor R102, a rectifying diode D103, a rectifying diode D101, and a resistor R101.

具體而言,第二電流比流器CT2的電感的B5端子耦接至電晶體Q103的基極以及電晶體Q101的集極,還透過電阻R101和整流二極體D101耦接至第二電流比流器CT2的電感的B6端子,其中,整流二極體D101的負極耦接至B6端子。B6端子還透過電阻R102和整流二極體D103耦接至電晶體Q102的基極,其中,整流二極體D103的正極耦接至電阻R102。電晶體Q102的射極耦接至電晶體Q103的射極,還透過電阻R105耦接至第二金屬氧化物半導體場效電晶體Q2的閘極B3端子。B3端子還透過電阻R104耦接至接地線。電晶體Q103的集極耦接至接地線和電晶體Q101的射極,還與電阻 R101和整流二極體D101的節點處連接。電阻R102的兩端並聯有整流二極體D102。整流二極體D103的正極耦接至整流二極體D102的正極,整流二極體D103的負極透過整流二極體D104耦接至電晶體Q102的集極,其中,整流二極體D104的負極耦接至電晶體Q102的集極。整流二極體D104的負極還透過電容C101耦接至接地線。 Specifically, the B5 terminal of the inductor of the second current comparator CT2 is coupled to the base of the transistor Q103 and the collector of the transistor Q101, and is coupled to the second current ratio through the resistor R101 and the rectifying diode D101. The B6 terminal of the inductor of the current transformer CT2, wherein the cathode of the rectifier diode D101 is coupled to the B6 terminal. The B6 terminal is also coupled to the base of the transistor Q102 through the resistor R102 and the rectifying diode D103. The anode of the rectifying diode D103 is coupled to the resistor R102. The emitter of the transistor Q102 is coupled to the emitter of the transistor Q103, and is also coupled to the gate B3 terminal of the second metal oxide semiconductor field effect transistor Q2 via a resistor R105. The B3 terminal is also coupled to the ground line through a resistor R104. The collector of transistor Q103 is coupled to the ground line and the emitter of transistor Q101, and also to the resistor R101 is connected to the node of the rectifier diode D101. A rectifying diode D102 is connected in parallel to both ends of the resistor R102. The anode of the rectifier diode D103 is coupled to the anode of the rectifier diode D102, and the cathode of the rectifier diode D103 is coupled to the collector of the transistor Q102 through the rectifier diode D104, wherein the anode of the rectifier diode D104 It is coupled to the collector of the transistor Q102. The cathode of the rectifier diode D104 is also coupled to the ground line through the capacitor C101.

本發明實施例提供的驅動電路52的工作原理詳述如下:如圖3所示,當變壓器的次級繞組T1的上端為正極、下端為負極時,電流從接地線流向第二金屬氧化物半導體場效電晶體Q2以及第二電流比流器CT2。假設流過第二金屬氧化物半導體場效電晶體Q2的電流為I0,第二電流比流器CT2感應到電流I0之後,產生一個對應於電流I0的第二驅動電流I1,第二驅動電流I1的方向如圖3中箭頭所示。 The working principle of the driving circuit 52 provided by the embodiment of the present invention is as follows. As shown in FIG. 3, when the upper end of the secondary winding T1 of the transformer is a positive pole and the lower end is a negative pole, current flows from the grounding line to the second metal oxide semiconductor. Field effect transistor Q2 and second current comparator CT2. Assuming that the current flowing through the second metal oxide semiconductor field effect transistor Q2 is I 0 , and after the second current current comparator CT2 induces the current I 0 , a second driving current I 1 corresponding to the current I 0 is generated. The direction of the two drive current I 1 is as indicated by the arrow in FIG.

如圖5所示,第二驅動電流I1從第二電流比流器CT2的B5端子流入,從B6端子流出,因此B5端子為正極,B6端子為負極。這種情况下,由於電晶體Q103的基極耦接至作為正極的B5端子,因此電晶體Q103截止;由於電晶體Q101的基極耦接至作為負極的B6端,因此電晶體Q101也截止;由於電晶體Q102的基極耦接至作為正極的B5端,電晶體Q102的射極透過電阻R105和電阻R104耦接至接地線,因此電晶體Q102導通;此時,電容C101能够透過電晶體Q102和電阻R105向第二金屬氧化物半導體場效電晶體Q2的閘極B3端子放電,進而使得第二金屬氧化物半導體場效電晶體Q2導通。 5, the second driving current I 1 from the ratio of current flowing in the second current terminal CT2, B5, B6 flows from the terminal, and therefore a positive electrode terminal B5, B6 is a negative terminal. In this case, since the base of the transistor Q103 is coupled to the B5 terminal as the positive electrode, the transistor Q103 is turned off; since the base of the transistor Q101 is coupled to the B6 terminal as the negative electrode, the transistor Q101 is also turned off; Since the base of the transistor Q102 is coupled to the B5 terminal as the positive electrode, the emitter of the transistor Q102 is coupled to the ground line through the resistor R105 and the resistor R104, so that the transistor Q102 is turned on; at this time, the capacitor C101 can pass through the transistor Q102. And the resistor R105 discharges to the gate B3 terminal of the second metal oxide semiconductor field effect transistor Q2, thereby turning on the second metal oxide semiconductor field effect transistor Q2.

當變壓器的次級繞組T1的上端為負極,下端為正極時,電流從第一金屬氧化物半導體場效電晶體Q1流向第一電流比流器CT1。若假設流過第二金屬氧化物半導體場效電晶體Q2的電流為I0,第二電流比流器CT2感應到電流I0之後,產生一個對應於電流I0的第二驅動電流I1。第二驅動電流I1從第二電流比流器CT2的B6端子流入,從B5端子流出,因此B6端子為正極,B5端子為負極。這種情况下,由於電晶體Q101的基極耦接至作為正極的B6端子,電 晶體Q101的射極耦接至接地線,因此電晶體Q101導通;電晶體Q103的集極透過電阻R105和電阻R104耦接至接地線,而電晶體Q103的基極耦接至作為負極的B5端子,因此電晶體Q103導通,電晶體Q102截止;此時第二驅動電路52的輸出端B3端子即第二金屬氧化物半導體場效電晶體Q2的閘極透過電阻R104接地而截止,電容C101被充電。 When the upper end of the secondary winding T1 of the transformer is a negative pole and the lower end is a positive pole, current flows from the first MOSFET Q1 to the first current comparator CT1. If it is assumed that the current flowing through the second metal oxide semiconductor field effect transistor Q2 is I 0 , and after the second current current comparator CT2 senses the current I 0 , a second driving current I 1 corresponding to the current I 0 is generated. Second driving current I 1 from the ratio of current flowing in the second current terminal CT2, B6, B5 from flowing terminal, a positive electrode terminal so B6, B5 is a negative terminal. In this case, since the base of the transistor Q101 is coupled to the B6 terminal as the positive electrode, the emitter of the transistor Q101 is coupled to the ground line, so that the transistor Q101 is turned on; the collector of the transistor Q103 is transmitted through the resistor R105 and the resistor. R104 is coupled to the ground line, and the base of the transistor Q103 is coupled to the B5 terminal as the negative electrode, so the transistor Q103 is turned on, and the transistor Q102 is turned off; at this time, the output terminal B3 of the second driving circuit 52 is the second metal. The gate of the oxide semiconductor field effect transistor Q2 is grounded through the resistor R104, and the capacitor C101 is charged.

第一驅動電路51的結構與工作原理與第二驅動電路52相同,在此不做贅述。 The structure and working principle of the first driving circuit 51 are the same as those of the second driving circuit 52, and are not described herein.

本實施例中的高頻電子開關可以包括:具有優良高頻特性的功率金屬氧半導體場效電晶體(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET),垂直雙擴散金屬氧半導體場效電晶體(Vertical Double-Diffused Metal-Oxide-Semiconductor,VDMOS)、絕緣栅雙極電晶體(Insulated Gate Bipolar Transistor,IGBT)、電力電晶體(Giant Transistor,GTR)、MOS控制型電晶體(MOS Controlled Thyristor,MCT)、集成閘極換向電晶體(Integrated Gate Commutated Thyristor,IGCT)、絕緣栅外延生長式電晶體(Insulated Gate Epitaxial-Growth Transistor,IGET)、絕緣栅同質式結構電晶體(Insulate-Gate Homogeneous Transistor,IGHT)以及閘極可關斷電晶體(Gate Turn-Off Thyristor,GTO)等其它電力電子元件。 The high frequency electronic switch in this embodiment may include: a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) having excellent high-frequency characteristics, and a vertical double-diffused metal oxide semiconductor field effect transistor. (Vertical Double-Diffused Metal-Oxide-Semiconductor, VDMOS), Insulated Gate Bipolar Transistor (IGBT), Power Transistor (GTR), MOS Controlled Thyristor (MCT) ), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Epitaxial-Growth Transistor (IGET), Insulate-Gate Homogeneous Transistor (Insulate-Gate Homogeneous Transistor, IGHT) and other power electronic components such as Gate Turn-Off Thyristor (GTO).

圖6所示為根據本發明一實施例之整流方法的流程示意圖600。圖6將結合圖2至圖5進行描述。如圖6所示,本發明實施例包括如下步驟: FIG. 6 is a flow chart 600 showing a rectification method according to an embodiment of the invention. Figure 6 will be described in conjunction with Figures 2 through 5. As shown in FIG. 6, the embodiment of the present invention includes the following steps:

在步驟602中,第一檢測電路感應流過第一高頻電子開關的電流,產生第一驅動電流。 In step 602, the first detection circuit senses a current flowing through the first high frequency electronic switch to generate a first drive current.

在步驟604中,第一驅動電路根據第一驅動電流控制第一高頻電子開關的開關狀態。具體來說,第一驅動電路中的第一充電模組根據第一驅動電流產生使第一高頻電子開關導通的電荷,並儲存電荷;第一驅動電路中的第一控制模組根據第一驅動電流控制第一驅動電路中的第一驅動模組,當流過第一高頻電子開關的電流從接地線 流向第一檢測電路時,第一驅動模組將第一充電模組儲存的電荷輸出至第一高頻電子開關的閘極,進而使第一高頻電子開關導通;當流過第一高頻電子開關的電流從第一檢測電路流向接地線時,第一驅動模組將第一高頻電子開關的閘極耦接至接地線,進而使第一高頻電子開關截止。 In step 604, the first driving circuit controls the switching state of the first high frequency electronic switch according to the first driving current. Specifically, the first charging module in the first driving circuit generates a charge that turns on the first high-frequency electronic switch according to the first driving current, and stores the electric charge; the first control module in the first driving circuit is according to the first Driving current controls the first driving module in the first driving circuit, when the current flowing through the first high frequency electronic switch is from the ground line When flowing to the first detecting circuit, the first driving module outputs the charge stored by the first charging module to the gate of the first high frequency electronic switch, thereby turning on the first high frequency electronic switch; when flowing through the first high frequency When the current of the electronic switch flows from the first detecting circuit to the grounding line, the first driving module couples the gate of the first high-frequency electronic switch to the grounding line, thereby turning off the first high-frequency electronic switch.

在步驟606中,第二檢測電路感應流過第二高頻電子開關的電流,產生第二驅動電流。 In step 606, the second detection circuit senses a current flowing through the second high frequency electronic switch to generate a second drive current.

在步驟608中,第二驅動電路根據第二驅動電流控制第二高頻電子開關的開關狀態。具體來說,第二驅動電路中的第二充電模組根據第二驅動電流產生使第二高頻電子開關導通的電荷,並儲存電荷;第二驅動電路中的第二控制模組根據第二驅動電流控制第二驅動電路中的第二驅動模組,當流過第二高頻電子開關的電流從接地線流向第二檢測電路時,第二驅動模組將第二充電模組儲存的電荷輸出至第二高頻電子開關的閘極,進而使第二高頻電子開關導通;當流過第二高頻電子開關的電流從第二檢測電路流向接地線時,第二驅動模組將第二高頻電子開關的閘極耦接至接地線,進而使第二高頻電子開關截止。 In step 608, the second driving circuit controls the switching state of the second high frequency electronic switch according to the second driving current. Specifically, the second charging module in the second driving circuit generates a charge that turns on the second high-frequency electronic switch according to the second driving current, and stores the electric charge; and the second control module in the second driving circuit is according to the second The driving current controls the second driving module in the second driving circuit. When the current flowing through the second high-frequency electronic switch flows from the ground line to the second detecting circuit, the second driving module stores the electric charge stored in the second charging module. Outputting to the gate of the second high frequency electronic switch, thereby turning on the second high frequency electronic switch; when the current flowing through the second high frequency electronic switch flows from the second detecting circuit to the ground line, the second driving module will be The gate of the two high frequency electronic switch is coupled to the ground line, thereby turning off the second high frequency electronic switch.

本領域技術人員可以理解的是,上述步驟602~步驟608並沒有嚴格的時序限制,例如還可以先執行步驟606和步驟608之後,再執行步驟602和步驟604。本發明並不以此為限。 It can be understood by those skilled in the art that the above steps 602 to 608 are not strictly time-limited. For example, step 606 and step 608 may be performed first, and then steps 602 and 604 may be performed. The invention is not limited thereto.

本發明實施例提供的整流電路和整流方法可適用於全橋電路、半橋電路、推挽電路、正激電路等,適用性較廣,但本發明並不以此為限。 The rectifying circuit and the rectifying method provided by the embodiments of the present invention are applicable to a full bridge circuit, a half bridge circuit, a push-pull circuit, a forward circuit, etc., and have wide applicability, but the invention is not limited thereto.

上文具體實施方式和附圖僅為本發明之常用實施例。顯然,在不脫離後附申請專利範圍所界定的本發明精神和保護範圍的前提下可以有各種增補、修改和替換。本技術領域中具有通常知識者應該理解,本發明在實際應用中可根據具體的環境和工作要求在不背離發明準則的前提下在形式、結構、佈局、比例、材料、元素、元件及其它方面有所變化。因此,在此披露之實施例僅用於說明而非限制, 本發明之範圍由後附申請專利範圍及其合法均等物界定,而不限於先前之描述。 The above detailed description and the accompanying drawings are only typical embodiments of the invention. It is apparent that various additions, modifications and substitutions are possible without departing from the spirit and scope of the invention as defined by the appended claims. It should be understood by those of ordinary skill in the art that the present invention may be applied in the form of the form, structure, arrangement, ratio, material, element, element, and other aspects in the actual application without departing from the invention. Changed. Therefore, the embodiments disclosed herein are for illustration and not limitation only. The scope of the present invention is defined by the scope of the appended claims and their legal equivalents, and is not limited by the foregoing description.

1‧‧‧變壓器 1‧‧‧Transformer

2‧‧‧濾波電路 2‧‧‧Filter circuit

31‧‧‧第一檢測電路 31‧‧‧First detection circuit

32‧‧‧第二檢測電路 32‧‧‧Second detection circuit

41‧‧‧第一高頻電子開關 41‧‧‧First high frequency electronic switch

42‧‧‧第二高頻電子開關 42‧‧‧Second high frequency electronic switch

51‧‧‧第一驅動電路 51‧‧‧First drive circuit

52‧‧‧第二驅動電路 52‧‧‧Second drive circuit

200‧‧‧整流電路 200‧‧‧Rectifier circuit

Claims (23)

一種整流電路,包括:一第一檢測電路,耦接至一變壓器的一次級繞組的一端;一第一高頻電子開關,耦接在該第一檢測電路和一接地線之間;一第二檢測電路,耦接至該次級繞組的另一端;一第二高頻電子開關,耦接在該第二檢測電路和該接地線之間;一第一驅動電路,耦接至該第一檢測電路和該第一高頻電子開關,根據該第一檢測電路基於流過該第一高頻電子開關的一電流而產生的一第一驅動電流,控制該第一高頻電子開關;以及一第二驅動電路,耦接至該第二檢測電路和該第二高頻電子開關,根據該第二檢測電路基於流過該第二高頻電子開關的一電流而產生的一第二驅動電流,控制該第二高頻電子開關。 A rectifier circuit includes: a first detection circuit coupled to one end of a primary winding of a transformer; a first high frequency electronic switch coupled between the first detection circuit and a ground line; a detection circuit coupled to the other end of the secondary winding; a second high frequency electronic switch coupled between the second detection circuit and the ground line; a first drive circuit coupled to the first detection And the first high frequency electronic switch controls the first high frequency electronic switch according to the first driving circuit generated by the first detecting circuit based on a current flowing through the first high frequency electronic switch; a second driving circuit coupled to the second detecting circuit and the second high frequency electronic switch, and controlling, according to the second detecting circuit, a second driving current generated based on a current flowing through the second high frequency electronic switch The second high frequency electronic switch. 如申請專利範圍第1項之整流電路,其中,該第一驅動電路包括:一第一充電模組,耦接至該第一檢測電路,根據該第一驅動電流產生使該第一高頻電子開關導通的一電荷,並儲存該電荷;一第一驅動模組,耦接至該第一高頻電子開關;以及一第一控制模組,耦接至該第一檢測電路、該第一充電模組和該第一驅動模組,根據該第一驅動電流控制該第一驅動模組。 The rectifying circuit of claim 1, wherein the first driving circuit comprises: a first charging module coupled to the first detecting circuit, and generating the first high frequency electronic according to the first driving current a first charge is coupled to the first high frequency electronic switch; and a first control module coupled to the first detection circuit, the first charge The module and the first driving module control the first driving module according to the first driving current. 如申請專利範圍第2項之整流電路,其中,當流過該第一高頻電子開關的該電流從該接地線流向該第一檢測電路時,該 第一驅動模組將該第一充電模組儲存的該電荷輸出至該第一高頻電子開關的一閘極,進而使該第一高頻電子開關導通。 The rectifier circuit of claim 2, wherein when the current flowing through the first high frequency electronic switch flows from the ground line to the first detecting circuit, The first driving module outputs the charge stored by the first charging module to a gate of the first high frequency electronic switch, thereby turning on the first high frequency electronic switch. 如申請專利範圍第2項之整流電路,其中,當流過該第一高頻電子開關的該電流從該第一檢測電路流向該接地線時,該第一驅動模組將該第一高頻電子開關的一閘極接至該接地線,進而使該第一高頻電子開關截止。 The rectifying circuit of claim 2, wherein when the current flowing through the first high frequency electronic switch flows from the first detecting circuit to the ground line, the first driving module is configured to the first high frequency A gate of the electronic switch is connected to the ground line, thereby turning off the first high frequency electronic switch. 如申請專利範圍第1項之整流電路,其中,該第一檢測電路包括一第一電流比流器,該第一電流比流器的一電感的兩端分別耦接至該第一驅動電路的兩個輸入端。 The rectifying circuit of claim 1, wherein the first detecting circuit comprises a first current comparator, and two ends of an inductor of the first current comparator are respectively coupled to the first driving circuit Two inputs. 如申請專利範圍第5項之整流電路,其中,該第一高頻電子開關的一汲極耦接至該第一電流比流器,該第一高頻電子開關的一閘極耦接至該第一驅動電路的一輸出端。 The rectifier circuit of claim 5, wherein a first pole of the first high frequency electronic switch is coupled to the first current comparator, and a gate of the first high frequency electronic switch is coupled to the An output of the first drive circuit. 如申請專利範圍第1項之整流電路,其中,該第二驅動電路包括:一第二充電模組,耦接至該第二檢測電路,根據該第二驅動電流產生使該第二高頻電子開關導通的一電荷,並儲存該電荷;一第二驅動模組,耦接至該第二高頻電子開關;以及一第二控制模組,耦接至該第二檢測電路、該第二充電模組和該第二驅動模組,根據該第二驅動電流控制該第二驅動模組。 The rectifying circuit of claim 1, wherein the second driving circuit comprises: a second charging module coupled to the second detecting circuit, and generating the second high frequency electronic according to the second driving current a charge that is turned on by the switch and stores the charge; a second drive module coupled to the second high frequency electronic switch; and a second control module coupled to the second detection circuit, the second charge The module and the second driving module control the second driving module according to the second driving current. 如申請專利範圍第7項之整流電路,其中,當流過該第二高頻電子開關的該電流從該接地線流向該第二檢測電路時,該第二驅動模組將該第二充電模組儲存的該電荷輸出至該第二高頻電子開關的一閘極,進而使該第二高頻電子開關導 通。 The rectifying circuit of claim 7, wherein the second driving module applies the second charging mode when the current flowing through the second high frequency electronic switch flows from the ground line to the second detecting circuit The stored charge of the group is output to a gate of the second high frequency electronic switch, thereby causing the second high frequency electronic switch to be guided through. 如申請專利範圍第7項之整流電路,其中,當流過該第二高頻電子開關的該電流從該第二檢測電路流向該接地線時,該第二驅動模組將該第二高頻電子開關的一閘極接至該接地線,進而使該第二高頻電子開關截止。 The rectifier circuit of claim 7, wherein when the current flowing through the second high frequency electronic switch flows from the second detecting circuit to the ground line, the second driving module applies the second high frequency A gate of the electronic switch is connected to the ground line, thereby turning off the second high frequency electronic switch. 如申請專利範圍第1項之整流電路,其中,該第二檢測電路包括一第二電流比流器,該第二電流比流器的一電感的兩端分別耦接至該第二驅動電路的兩個輸入端。 The rectifying circuit of claim 1, wherein the second detecting circuit comprises a second current comparator, wherein two ends of an inductor of the second current comparator are respectively coupled to the second driving circuit Two inputs. 如申請專利範圍第10項之整流電路,其中,該第二高頻電子開關的一汲極耦接至該第二電流比流器,該第二高頻電子開關的閘極一耦接至該第二驅動電路的一輸出端。 The rectifier circuit of claim 10, wherein a drain of the second high frequency electronic switch is coupled to the second current comparator, and a gate of the second high frequency electronic switch is coupled to the gate An output of the second drive circuit. 如申請專利範圍第1項之整流電路,還包括一濾波電路,耦接至該次級繞組的兩端和該接地線。 The rectifier circuit of claim 1, further comprising a filter circuit coupled to both ends of the secondary winding and the ground line. 如申請專利範圍第12項之整流電路,其中,該濾波電路包括一第一電感、一第二電感和一電容,其中,該第一電感耦接於該次級繞組和該電容,該電容耦接於該接地線,該第二電感耦接於該第一電感和該次級繞組。 The rectifier circuit of claim 12, wherein the filter circuit comprises a first inductor, a second inductor and a capacitor, wherein the first inductor is coupled to the secondary winding and the capacitor, the capacitor coupling Connected to the ground line, the second inductor is coupled to the first inductor and the secondary winding. 如申請專利範圍第13項之整流電路,其中,該第一電感和該電容串聯耦接在該次級繞組的一正極和該接地線之間。 The rectifier circuit of claim 13, wherein the first inductor and the capacitor are coupled in series between a positive pole of the secondary winding and the ground line. 如申請專利範圍第13項之整流電路,其中,該第二電感的一端耦接至該次級繞組的一負極,另一端耦接至該第一電感和該電容。 The rectifying circuit of claim 13 , wherein one end of the second inductor is coupled to a negative pole of the secondary winding, and the other end is coupled to the first inductor and the capacitor. 如申請專利範圍第1項之整流電路,其中,該第一高頻電子開關和該第二高頻電子開關包括以下半導體元件中的任一種:一金屬氧化物半導體管、一垂直雙擴散金屬-氧化物半導體場效電晶體、一絕緣栅雙極電晶體、一電力電晶體、一 MOS控制型電晶體、一集成閘極換向電晶體、一絕緣栅外延生長式電晶體、一絕緣栅同質式結構電晶體以及一閘極可關斷電晶體。 The rectifier circuit of claim 1, wherein the first high frequency electronic switch and the second high frequency electronic switch comprise any one of the following semiconductor elements: a metal oxide semiconductor tube, a vertical double diffusion metal - Oxide semiconductor field effect transistor, an insulated gate bipolar transistor, a power transistor, a A MOS controlled transistor, an integrated gate commutated transistor, an insulated gate epitaxial grown transistor, an insulated gate homomorphic transistor, and a gate turn-off transistor. 一種整流方法,包括:一第一檢測電路感應流過一第一高頻電子開關的一電流,根據該電流產生一第一驅動電流;一第一驅動電路根據該第一驅動電流控制該第一高頻電子開關;一第二檢測電路感應流過一第二高頻電子開關的一電流,根據該電流產生一第二驅動電流;以及一第二驅動電路根據該第二驅動電流控制該第二高頻電子開關。 A rectifying method includes: a first detecting circuit inducing a current flowing through a first high frequency electronic switch, generating a first driving current according to the current; and a first driving circuit controlling the first according to the first driving current a high frequency electronic switch; a second detecting circuit inducing a current flowing through a second high frequency electronic switch, generating a second driving current according to the current; and a second driving circuit controlling the second according to the second driving current High frequency electronic switch. 如申請專利範圍第17項之整流方法,其中,該第一驅動電路根據該第一驅動電流控制該第一高頻電子開關的步驟包括:該第一驅動電路中的一第一充電模組根據該第一驅動電流產生使該第一高頻電子開關導通的一電荷,並儲存該電荷;以及該第一驅動電路中的一第一控制模組根據該第一驅動電流控制該第一驅動電路中的一第一驅動模組。 The rectifying method of claim 17, wherein the step of controlling the first high frequency electronic switch according to the first driving current comprises: a first charging module in the first driving circuit is based on The first driving current generates a charge that turns on the first high frequency electronic switch, and stores the electric charge; and a first control module in the first driving circuit controls the first driving circuit according to the first driving current A first drive module in the middle. 如申請專利範圍第18項之整流方法,其中,當流過該第一高頻電子開關的該電流從一接地線流向該第一檢測電路時,該第一驅動模組將該第一充電模組儲存的該電荷輸出至該第一高頻電子開關的一閘極,進而使該第一高頻電子開關導通。 The rectifying method of claim 18, wherein the first driving module applies the first charging mode when the current flowing through the first high frequency electronic switch flows from a ground line to the first detecting circuit The charge stored in the group is output to a gate of the first high frequency electronic switch, thereby turning on the first high frequency electronic switch. 如申請專利範圍第18項之整流方法,其中,當流過該第一 高頻電子開關的該電流從該第一檢測電路流向一接地線時,該第一驅動模組將該第一高頻電子開關的一閘極接至該接地線,進而使該第一高頻電子開關截止。 For example, the rectification method of claim 18, wherein when flowing through the first When the current of the high-frequency electronic switch flows from the first detecting circuit to a grounding line, the first driving module connects a gate of the first high-frequency electronic switch to the grounding line, thereby making the first high frequency The electronic switch is turned off. 如申請專利範圍第17項之整流方法,其中,該第二驅動電路根據該第二驅動電流控制該第二高頻電子開關的步驟包括:該第二驅動電路中的一第二充電模組根據該第二驅動電流產生使該第二高頻電子開關導通的一電荷並儲存該電荷;以及該第二驅動電路中的一第二控制模組根據該第二驅動電流控制該第二驅動電路中的一第二驅動模組。 The rectifying method of claim 17, wherein the step of controlling the second high frequency electronic switch according to the second driving current comprises: a second charging module of the second driving circuit is The second driving current generates a charge that turns on the second high frequency electronic switch and stores the electric charge; and a second control module in the second driving circuit controls the second driving circuit according to the second driving current a second drive module. 如申請專利範圍第21項之整流電路方法,其中,當流過該第二高頻電子開關的該電流從一接地線流向該第二檢測電路時,該第二驅動模組將該第二充電模組儲存的該電荷輸出至該第二高頻電子開關的一閘極,進而使該第二高頻電子開關導通。 The rectifying circuit method of claim 21, wherein when the current flowing through the second high frequency electronic switch flows from a ground line to the second detecting circuit, the second driving module charges the second The charge stored in the module is output to a gate of the second high frequency electronic switch, thereby turning on the second high frequency electronic switch. 如申請專利範圍第21項之整流方法,其中,當流過該第二高頻電子開關的該電流從該第二檢測電路流向一接地線時,該第二驅動模組將該第二高頻電子開關的一閘極接至該接地線,進而使該第二高頻電子開關截止。 The rectifying method of claim 21, wherein the second driving module applies the second high frequency when the current flowing through the second high frequency electronic switch flows from the second detecting circuit to a ground line A gate of the electronic switch is connected to the ground line, thereby turning off the second high frequency electronic switch.
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