TW201314474A - Optimized analysis method of photoelectric element process parameters - Google Patents
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- 238000000034 method Methods 0.000 claims abstract description 93
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- 238000004458 analytical method Methods 0.000 claims abstract description 31
- 238000012795 verification Methods 0.000 claims description 23
- 230000000694 effects Effects 0.000 claims description 16
- 238000009826 distribution Methods 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 13
- 238000005259 measurement Methods 0.000 claims description 11
- 238000013386 optimize process Methods 0.000 claims description 11
- 239000011368 organic material Substances 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 8
- 238000002474 experimental method Methods 0.000 claims description 6
- 238000013439 planning Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000013433 optimization analysis Methods 0.000 claims description 4
- 230000006798 recombination Effects 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 4
- 238000001134 F-test Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 claims description 3
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- 238000000611 regression analysis Methods 0.000 abstract description 4
- 238000000540 analysis of variance Methods 0.000 abstract description 3
- 238000013401 experimental design Methods 0.000 abstract description 3
- 238000001422 normality test Methods 0.000 abstract 1
- 238000000528 statistical test Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 52
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 230000005525 hole transport Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000000551 statistical hypothesis test Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 150000001339 alkali metal compounds Chemical class 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000013440 design planning Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000491 multivariate analysis Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
本發明係與係與工業製程參數之設計規劃有關,特別是指一種利用統計檢定方式對光電元件製程參數之最佳化分析方法。The invention is related to the design planning of industrial process parameters, in particular to an optimized analysis method for the process parameters of the photoelectric components by means of statistical verification.
在工業產品的生產製程上,影響產品的特性有各種可能原因,一般稱之為品質特性;其中的影響因素稱為因子,每個因子的相關參數稱之為水準,而產品的製程實驗結果由因子之各種水準組合而得到,目的是為了找到某些影響最明顯之因子,進而由改變該些特定因子之水準使產品製程可達理想之結果。在多種實驗規劃中,田口法係研究開發各種直交表、點線圖、應用技巧及解析方法,追求以最低成本製造最高品質產品為目標;就研發成本而言,田口法以縮短開發時間及減少資源使用為考量,就製造成本而言,田口方法使用低等級原料及不昂貴設備,而能維持一定品質水準。為此,田口法的實驗規劃最為廣泛的應用於各種工業領域之製程實驗研究上。In the production process of industrial products, there are various possible reasons for influencing the characteristics of products, generally referred to as quality characteristics; the influencing factors are called factors, the relevant parameters of each factor are called level, and the process results of the products are determined by The combination of various levels of factors is intended to find some of the most influential factors, and the level of the specific factors can be changed to achieve the desired results. In a variety of experimental planning, the Taguchi Law Institute researches and develops various orthogonal tables, dotted lines, application techniques and analytical methods, and pursues the goal of manufacturing the highest quality products at the lowest cost. In terms of R&D costs, the Taguchi method shortens development time and reduces Resource use is considered. In terms of manufacturing cost, the Taguchi method uses low-grade raw materials and inexpensive equipment to maintain a certain level of quality. To this end, the experimental planning of the Taguchi method is the most widely used in process engineering research in various industrial fields.
隨著光電產業的快速發展,配合綠色環保面板已經開始蛻變,近幾年來,許多學術研究團隊與光電產業對於新興製程產品,如有機發光二極體(organic light emitting diode,OLED),大多投注了許多心力進行研發及改良;然而在研發新興光電元件之結構或是材料上,皆必需考慮材料本身的物理性質,如能階差、載子遷移率、熱性質、形態學等。以OLED元件為例,不論是電洞注入層厚度、電洞傳輸層厚度、發光層厚度、客摻雜物濃度或電子傳輸層厚度,任一製程結構的參數通常會直接的影響元件之光電特性。因此有Jia-Ming Liu等人之研究團隊於2001年Materials Science & Engineering B85第209-211頁所發表之「Studies on modifications of ITO surfaces in OLED devices by Taguchi methods」,係利用田口法來研究OLED元件製程之ITO塗佈以各種表面處理的影響,這些表面處理包括化學製品和在不同的製程條件下的機械過程;該團隊以田口法分析最佳表面處理條件後,再使用最佳條件製程之OLED元件,其發光效率可提升超過50%。With the rapid development of the optoelectronic industry, the green environmental protection panel has begun to change. In recent years, many academic research teams and the optoelectronic industry have mostly bet on emerging process products such as organic light emitting diodes (OLEDs). Many efforts have been made to develop and improve; however, in the development of structures or materials of emerging photovoltaic components, it is necessary to consider the physical properties of the materials themselves, such as energy level difference, carrier mobility, thermal properties, morphology, and the like. Taking an OLED device as an example, whether the thickness of the hole injection layer, the thickness of the hole transport layer, the thickness of the light-emitting layer, the concentration of the guest dopant, or the thickness of the electron transport layer, the parameters of any process structure usually directly affect the photoelectric characteristics of the device. . Therefore, the "Studies on modifications of ITO surfaces in OLED devices by Taguchi methods" published by the research team of Jia-Ming Liu et al., Materials Science & Engineering B85, 2001, 209-211, uses the Taguchi method to study OLED components. Process ITO coating is affected by various surface treatments, including chemicals and mechanical processes under different process conditions; the team uses the Taguchi method to analyze the best surface treatment conditions, and then use the best condition process OLED The luminous efficiency of the component can be increased by more than 50%.
甚至光電產業中已具有相當成熟技術之產品,如液晶顯示器,由於面臨全球面板廠之激烈競爭情勢,產能、品質及價格皆是產品之競爭鐵律,因此除了積極提高產能外,更需針對產品之多種品質特性之相關性做深入的探討,以能有最低的實驗成本全面顧及所有品質特性使能開發出最具競爭優勢的顯示器產品。因此有如江季哲於2008年國立高雄大學碩士論文所發表之「模糊田口法於多重品質特性製程上之研究-以液晶顯示器製程為例」,係在液晶顯示器製程之薄膜電晶體的金屬鍍膜製程中,利用田口法中處理單品質特性的方法找出最佳參數組合,再由多變量分析找出同時影響兩種品質特性的顯著因子,進行包含兩種以上品質特性的最佳參數組合之模擬驗證;其所提最佳化程序與模式之數值分析,可驗證此方法之有效性與實用性,幫助節省實驗成本、縮短新產品由實驗階段導入生產階段之時程。Even in the optoelectronics industry, products with quite mature technologies, such as liquid crystal displays, due to the fierce competition of global panel factories, production capacity, quality and price are the iron laws of products. Therefore, in addition to actively increasing production capacity, it is necessary to target products. The correlation of various quality characteristics is discussed in depth, so that the lowest experimental cost can fully consider all the quality characteristics to enable the development of the most competitive display products. Therefore, as in the case of Jiang Jizhe's 2008 Master Kaohsiung University Master's thesis, "The study of the fuzzy Taguchi method in the process of multi-quality characteristics - taking the liquid crystal display process as an example" is in the metallization process of thin film transistors in the liquid crystal display process. Using the method of processing single quality characteristics in Taguchi method to find the best parameter combination, and then multivariate analysis to find the significant factors that affect the two quality characteristics at the same time, and carry out simulation verification of the best parameter combination including two or more quality characteristics; The numerical analysis of the optimized procedures and modes can verify the validity and practicability of this method, help save the experiment cost, and shorten the time course of the new product from the experimental stage to the production stage.
有鑑於此,本發明人更積極於新興光電元件產品上,能於顧及多重品質特性下,以最低的實驗成本有效且快速的方式找出最佳製程條件In view of this, the inventors are more active in emerging optoelectronic component products, and can find the optimal process conditions in an efficient and rapid manner with the lowest experimental cost, taking into account multiple quality characteristics.
本發明之主要目的在於提供一種光電元件製程參數之最佳化分析方法,以最低的實驗成本有效且快速的找出最佳的製程參數,使製程產品兼顧多重品質特性。The main object of the present invention is to provide an optimized analysis method for the process parameters of photovoltaic components, which can effectively and quickly find the optimum process parameters with the lowest experimental cost, so that the process products can take into account multiple quality characteristics.
為達成上述目的,本發明所提供一種光電元件製程參數之最佳化分析方法包含有以下步驟:In order to achieve the above object, the present invention provides an optimized analysis method for a process parameter of a photovoltaic element comprising the following steps:
a. 選定上述光電元件之多數品質特性,列出影響該等品質特性之多數控制因子,並設定各該控制因子之變動參數;a. selecting a plurality of quality characteristics of the above-mentioned photovoltaic elements, listing a majority of control factors affecting the quality characteristics, and setting a variation parameter of each of the control factors;
b. 利用田口法進行實驗規劃設計與參數的配置,建立出直交表形成多組配置結構;b. Using the Taguchi method to carry out experimental planning design and parameter configuration, and establish a straight-through table to form a multi-group configuration structure;
c. 量測各組配置結構之該等品質特性,產生多數對應之目標函數;c. measuring the quality characteristics of each group of configuration structures, generating a majority of corresponding objective functions;
d. 分別對該等品質特性之目標函數進行變異數分析,於各該品質特性選定影響效應大之數個該控制因子以及至少二該控制因子所組合之高階因子;d. performing a variance analysis on the objective functions of the quality characteristics respectively, and selecting, among the quality characteristics, a plurality of the control factors having a large effect effect and at least two high-order factors combined by the control factors;
e. 產生各該品質特性的迴歸方程式,利用殘差分析檢驗各該迴歸方程式對各組配置結構之各品質特性之預測值與步驟c所得目標函數之差異;以及,e. generating a regression equation for each of the quality characteristics, and using residual analysis to test the difference between the predicted value of each of the quality characteristics of each set of configuration equations and the objective function obtained in step c;
f. 以常態檢定步驟e之殘差分佈為常態分配,即確定各該迴歸方程式可得對應該光電元件之各品質特性之製程參數最佳化組合。f. The residual distribution of the normal state verification step e is a normal state distribution, that is, each regression equation can be determined to obtain a process parameter optimization combination corresponding to each quality characteristic of the photovoltaic element.
本發明較佳實施例所提供光電元件製程參數之最佳化分析方法中,所述光電元件以多層有機材料所製成,其中一層有機材料係為電子、電洞再結合區之發光層,步驟a中,該等控制因子包含有各層有機材料之厚度及該發光層之摻雜物濃度。In the method for optimizing the process parameters of the photovoltaic device provided by the preferred embodiment of the present invention, the photovoltaic element is made of a plurality of organic materials, wherein one layer of the organic material is a light-emitting layer of an electron and a hole recombination zone. In a, the control factors include the thickness of each layer of organic material and the dopant concentration of the luminescent layer.
本發明較佳實施例所提供光電元件製程參數之最佳化分析方法中,步驟a中,選定之該等品質特性包括有該光電元件之驅動電壓、發光亮度及發光效率。In the method for optimizing the process parameters of the photovoltaic device according to the preferred embodiment of the present invention, in step a, the selected quality characteristics include the driving voltage, the luminance, and the luminous efficiency of the photovoltaic device.
較佳者,步驟c中,量測各該品質特性之方法為:驅動電壓之量測:係以提供該光電元件多數定電流,並取得對應驅動電壓之操作曲線,或提供該光電元件多數定電壓,並取得對應驅動電流之操作曲線,擷取一固定電流條件下之驅動電壓;發光亮度之量測:係於上述固定電流條件下使用分光式色度計量測特定光譜-色度座標之發光亮度;以及,發光效率之量測:係由上述所量測之發光亮度及該固定電流條件對應之電流密度經由以下轉換計算公式而得:發光效率=發光亮度/(電流密度x10)。Preferably, in step c, the method for measuring each of the quality characteristics is: measuring the driving voltage: providing a plurality of constant currents of the photovoltaic element, and obtaining an operation curve corresponding to the driving voltage, or providing a majority of the photoelectric element Voltage, and obtain the corresponding driving current operating curve, to obtain a driving voltage under a fixed current condition; measurement of luminous brightness: using spectroscopic colorimetric measurement of specific spectral-chromaticity coordinates under the above fixed current conditions Luminous brightness; and measurement of luminous efficiency: the luminous intensity measured by the above-mentioned measured light and the current density corresponding to the fixed current condition are obtained by the following conversion calculation formula: luminous efficiency = luminous brightness / (current density x10).
本發明較佳實施例所提供光電元件製程參數之最佳化分析方法中,步驟d中,更以一統計假設檢定評估各控制因子以及由至少二該控制因子所組合之至少一高階因子對各該品質特性的影響程度。In the method for optimizing the process parameters of the photovoltaic device provided by the preferred embodiment of the present invention, in step d, each of the control factors and at least one high-order factor pair combined by at least two of the control factors are further evaluated by a statistical hypothesis test. The degree of influence of this quality characteristic.
較佳者,步驟e中產生之迴歸方程式為Y=β0+β1X1+β2X2+…+βkXk+ε中,其中X1~Xk為該統計假設檢定之控制因子或高階因子;β1~βk為各該控制因子或高階因子之係數,該統計假設檢定為判斷各係數β1~βk是否為0,若為0,則表示該控制因子或高階因子為非顯著因子。更佳者,該統計假設檢定之假設為:Preferably, the regression equation generated in step e is Y=β0+β1X1+β2X2+...+βkXk+ε, where X1~Xk are the control factors or high-order factors of the statistical hypothesis test; β1~βk are each control factor Or the coefficient of the high-order factor, the statistical hypothesis is determined to determine whether each coefficient β1 - βk is 0, and if 0, it indicates that the control factor or the high-order factor is a non-significant factor. Better yet, the assumptions for this statistical hypothesis test are:
虛無假設H0:β1=β2=...=βk=0False hypothesis H0: β1 = β2 = ... = βk = 0
對立假設H1:β1,β2,...,βk≠0The opposite hypothesis H1: β1, β2, ..., βk≠0
棄卻準則:若P>α,則拒絕H1(α是錯誤率,P是機率值);該統計假設檢定的決策準則為:假若P<α,則拒絕虛無假設,若P>>α,則虛無假設為正確。Discard criteria: If P>α, reject H1 (α is the error rate, P is the probability value); the statistical decision hypothesis decision criterion is: If P<α, reject the null hypothesis, if P>>α, then The null hypothesis is correct.
最佳者,步驟d中,係以F檢定法之統計假設檢定α=0.05對應為拒絕虛無假設或虛無假設正確。The best one, in step d, is to use the statistical hypothesis of the F-test to determine that α = 0.05 corresponds to reject the null hypothesis or the null hypothesis is correct.
本發明較佳實施例所提供光電元件製程參數之最佳化分析方法中,步驟f之後,更以驗證實驗驗證多組最佳化製程參數之各品質特性與預估值的誤差。In the optimized analysis method for the process parameters of the photovoltaic element provided by the preferred embodiment of the present invention, after step f, the error of each quality characteristic and the estimated value of the plurality of optimized process parameters is verified by the verification experiment.
較佳者,係以其中一該品質特性為望大特性,並依照預估值由大到小適配出各組最佳化製程參數。Preferably, one of the quality characteristics is a large characteristic, and the optimized process parameters of each group are adapted according to the estimated value.
本發明所提供光電元件製程參數之最佳化分析方法,建立能夠表達設計者需求之最佳化模式,包括目標函數與因子條件限制,並以最佳化方式求出在滿足限制條件下,目標函數為最優之預測設計值。將有機發光二極體製程參數進行調變,藉由最佳化參數來改善元件光電特性以提升元件發光效率The invention provides an optimized analysis method for the process parameters of the photoelectric component, and establishes an optimization mode capable of expressing the designer's requirements, including the objective function and the factor condition limit, and optimizes the method to satisfy the constraint condition. The function is the optimal predicted design value. The organic light-emitting diode process parameters are modulated, and the photoelectric characteristics of the components are improved by optimizing parameters to improve the luminous efficiency of the components.
為了詳細說明本發明之結構、特徵及功效所在,茲舉以下較佳實施例並配合圖式說明如後,其中:第一圖為本發明最佳實施例所應用分析之光電元件之裝置示意圖;第二圖為第一圖所示光電元件以有機發光二極體為例之能帶結構圖;第三圖為本發明所提供最佳實施例之流程圖;第四圖為本發明最佳實施例對該光電元件之驅動電壓回歸方程式之殘差分佈;第五圖為本發明最佳實施例對該光電元件之發光亮度回歸方程式之殘差分佈;第六圖為本發明最佳實施例對該光電元件之發光效率回歸方程式之殘差分佈;第七圖為本發明最佳實施例所產生之三組最佳化製程參數之預估驅動電壓之曲線圖;第八圖為本發明最佳實施例所產生之三組最佳化製程參數之預估發光亮度之曲線圖;第九圖為本發明最佳實施例所產生之三組最佳化製程參數之預估發光效率之曲線圖。In order to explain the structure, features and advantages of the present invention in detail, the following description of the preferred embodiments and the accompanying drawings, wherein: FIG. The second figure is a structure diagram of an energy band of a photovoltaic element shown in the first figure, which is an organic light-emitting diode; the third figure is a flow chart of a preferred embodiment of the present invention; and the fourth figure is a preferred embodiment of the present invention. For example, the residual voltage distribution of the regression equation of the driving voltage of the photovoltaic element; the fifth figure is the residual distribution of the regression equation of the luminous luminance of the photovoltaic element according to the preferred embodiment of the present invention; and the sixth figure is a preferred embodiment of the present invention. The luminous efficiency of the photoelectric element is returned to the residual distribution of the equation; the seventh figure is a graph of the estimated driving voltage of the three sets of optimized process parameters generated by the preferred embodiment of the present invention; The graph of the predicted illuminance of the three sets of optimized process parameters generated by the embodiment; the ninth graph is the predicted illuminance curve of the three sets of optimized process parameters generated by the preferred embodiment of the present invention. .
請參閱如第一圖所示,為本發明所應用分析之一光電元件1,以本發明所提供製程參數之最佳化分析方法可使該光電元件1具有最佳之驅動電壓、發光亮度及發光效率等品質特性。以有機發光二極體為例,該光電元件1具有由下往上依序堆疊之一基板10、一陽極20、一電洞注入層(hole injection layer,HIL)30、一電洞傳輸層(hole transport layer,HTL)40、一發光層(emissive layer,EML)50、一電子傳輸層(electron transport layer,ETL)60、一電子注入層(electron injection layer,EIL)70及一陰極80。該光電元件1之發光機制為於該陽極20及陰極80施加一正向外加偏壓,使電子與電洞分別克服電子注入層70及電洞注入層30之介面能障(barrier)後,分別進入電子傳輸層60的LOMO(lowest unoccupied molecular orbital)能階及電洞傳輸層40的HOMO(highest occupied molecular orbital)能階;當電子、電洞在發光層50內再結合後形成一激子(exciton),激子藉由該外加偏壓之電場作用下遷移,並將能量傳遞給發光層50之分子,因此激發電子從基態躍遷至激發態,電子則會再從激發態以輻射方式衰減至基態,而以光或熱的形式釋放能量。Referring to the first embodiment, as shown in the first embodiment, the photoelectric element 1 is analyzed. According to the optimization analysis method of the process parameters provided by the present invention, the photovoltaic element 1 can have an optimum driving voltage and brightness. Quality characteristics such as luminous efficiency. Taking the organic light-emitting diode as an example, the photovoltaic element 1 has a substrate 10, an anode 20, a hole injection layer (HIL) 30, and a hole transport layer stacked sequentially from bottom to top. A hole transport layer (HTL) 40, an emissive layer (EML) 50, an electron transport layer (ETL) 60, an electron injection layer (EIL) 70, and a cathode 80. The light-emitting mechanism of the photovoltaic element 1 is to apply a positive external bias voltage to the anode 20 and the cathode 80, so that the electrons and the holes respectively overcome the interface barrier of the electron injection layer 70 and the hole injection layer 30, respectively. Entering the LOMO (lowest unoccupied molecular orbital) energy level of the electron transport layer 60 and the HOMO (highest occupied molecular orbital) energy level of the hole transport layer 40; when the electrons and holes are recombined in the light-emitting layer 50, an exciton is formed ( Exciton), the excitons migrate by the electric field of the applied bias voltage, and transfer energy to the molecules of the light-emitting layer 50, so that the excited electrons transition from the ground state to the excited state, and the electrons are then radiated from the excited state to the excited state. The ground state releases energy in the form of light or heat.
其中,影響有機發光二極體的發光特性主要因素如下:Among them, the main factors affecting the luminescence characteristics of the organic light-emitting diode are as follows:
(1)載子的注入效率:要提高電洞與電子注入效率,必需選擇有適當功函數(work function)之電極及有機材料,如第二圖所示為該光電元件1已選定適當功函數材料之能帶結構圖;當中各層材料的選用皆須使降低各層間之介面能障或是縮短能障寬度(barrier width),以於固定的電壓下,使電子及電洞有效率的分別從陰極80及陽極20向有機發光層50注入電荷載子。本實施例更提供以鹼金屬化合物所製成之電子注入層70,如醋酸鹽類或鹼金屬氟化物,使有機發光二極體降低驅動電壓及提高發光效率;該鹼金屬化合物會於薄膜蒸鍍製程中裂解並釋出活性金屬,以LiF為例,與陰極80材質Al之間具有歐姆接觸的特性,且只要1nm以下的厚度設於陰極80和電子傳輸層60之間,即可藉由陰極80電子自Al的費米能階直接透過LiF與電子傳輸層60的最低未佔有軌域形成穿遂效應,有效的消除界面能障。(1) Injection efficiency of carriers: To improve the efficiency of hole and electron injection, it is necessary to select electrodes and organic materials with appropriate work functions. As shown in the second figure, the appropriate work function has been selected for the photovoltaic element 1. The material's energy band structure diagram; the material of each layer must be selected to reduce the interface energy barrier between the layers or shorten the barrier width to make the electrons and holes efficient at a fixed voltage. The cathode 80 and the anode 20 inject charge carriers into the organic light-emitting layer 50. The present embodiment further provides an electron injecting layer 70 made of an alkali metal compound, such as an acetate or an alkali metal fluoride, so that the organic light emitting diode lowers the driving voltage and improves the luminous efficiency; the alkali metal compound is steamed in the film. The active metal is cracked and released during the plating process, and LiF is taken as an example, and has an ohmic contact characteristic with the cathode 80 material Al, and as long as a thickness of 1 nm or less is provided between the cathode 80 and the electron transport layer 60, The cathode 80 electrons directly form a penetrating effect from the lowest unoccupied orbital domain of the electron transport layer 60 through the Fermi level of Al, and effectively eliminate the interface energy barrier.
(2)載子在有機薄膜中的傳導性:自電洞注入層30以至電子傳輸層60等有機材料均有偏一極化(unipolar)的特性,需考量各層之極化種類對應選用利於電洞傳輸或利於電子傳輸之特定材質。(2) Conductivity of the carrier in the organic film: the organic material such as the hole injection layer 30 and the electron transport layer 60 have a unipolar characteristic, and it is necessary to consider the polarization type of each layer to select a favorable one. Hole transport or a specific material that facilitates electron transport.
(3)載子在有機薄膜中的再結合率:由於有機材料的傳導率並不相同,且激子的擴散距離為20~30 nm,因此再結合的區域通常會離其中一個電極較近,不論離陽極20或是陰極80較近都會造成淬熄(quench);所以發光層50之有機薄膜必頇要達到一定程度的厚度,才能有效地增加電子與電洞之再結合率,若選用電子傳輸層60有較高的最高佔有軌域能階使具有電洞阻隔能力,以及電洞傳輸層40有較低的最低未佔有軌域能階使具有電子阻隔能力,更可使激子侷限在發光層發光。(3) Recombination rate of the carrier in the organic film: since the conductivity of the organic material is not the same, and the diffusion distance of the excitons is 20 to 30 nm, the recombined region is usually close to one of the electrodes. Quenching is caused by the proximity of the anode 20 or the cathode 80. Therefore, the organic film of the luminescent layer 50 must have a certain thickness to effectively increase the recombination rate of electrons and holes. The transport layer 60 has a higher highest occupied rail energy level to have a hole blocking capability, and the hole transport layer 40 has a lower minimum unoccupied rail energy level to have an electron blocking capability, and the excitons are limited to The luminescent layer emits light.
(4)加入摻雜物(dopant):摻雜系統中,高能態的主發光體(host emitter)會將能量傳遞給低能態的客發光體(guest emitter)摻雜物,而由客發光體發光;因此加入摻雜物可使得有機發光二極體的效率提昇,而且只要加入少量的客發光體就可以改變電激發光的顏色,還可以增加有機發光二極體的效率。(4) Adding a dopant: In a doping system, a high-energy host emitter transfers energy to a low-energy guest emitter dopant, and a guest emitter Luminescence; therefore, the addition of dopants can increase the efficiency of the organic light-emitting diode, and the color of the electroluminescent light can be changed by adding a small amount of the guest emitter, and the efficiency of the organic light-emitting diode can be increased.
因此選擇適當的材料,增加該光電元件1各層間良好之接合與傳輸特性,更以本發明所提供之最佳化分析方法選擇電洞注入層30、電洞傳輸層40、發光層50及電子傳輸層60等有機材料之最佳製程參數,不僅提升了電子與電洞間傳輸之速度,亦能加強載子注入特性及結合效率,使該光電元件1具有最佳之驅動電壓、發光亮度及發光效率等品質特性。請參閱如第三圖所示,為本發明所提供光電元件製程參數之最佳化分析方法,並配合詳細說明步驟如下:Therefore, selecting appropriate materials, increasing the bonding and transmission characteristics between the layers of the photovoltaic element 1, and selecting the hole injection layer 30, the hole transport layer 40, the light-emitting layer 50, and the electrons by the optimized analysis method provided by the present invention. The optimal process parameters of the organic material such as the transport layer 60 not only improve the transmission speed between the electrons and the holes, but also enhance the carrier injection characteristics and the bonding efficiency, so that the photovoltaic element 1 has the best driving voltage and brightness. Quality characteristics such as luminous efficiency. Please refer to the third figure, which is an optimized analysis method for the process parameters of the photovoltaic elements provided by the present invention, and the detailed description steps are as follows:
1. 實驗設計:將最容易影響元件光電特性之各有機層材料結構設定為控制因子,以本實施例所提供該光電元件1為例,控制因子為電洞注入層30(HIL,代號A)、電洞傳輸層40(HTL,代號B)、發光層50之主發光體(Host,代號C)、發光層50之客掺雜物(Dopant,代號D)以及電子傳輸層60(ETL,代號E);並利用製程經驗先初步設定各控制因子的變動水準範圍,如下表所示元件結構之控制因子與變動水準範圍。1. Experimental design: The material structure of each organic layer which is most likely to affect the photoelectric characteristics of the element is set as a control factor. Taking the photovoltaic element 1 provided in this embodiment as an example, the control factor is the hole injection layer 30 (HIL, code A). , hole transport layer 40 (HTL, code B), the main illuminant of the luminescent layer 50 (Host, code C), the guest dopant of the luminescent layer 50 (Dopant, code D) and the electron transport layer 60 (ETL, code name E); and use the process experience to first set the range of variation of each control factor, as shown in the table below, the control factor and variation range of the component structure.
接著依照所設計之控制因子與變動水準範圍建立一以La(bc)表示之直交表,其中a表示實驗組數,b表示各因子的變動水準數,c表示因子數;依照因子的個數、因子間是否有交互作用及總自由度等來選擇適當的直交表進行實驗規劃。如下表所示設計L16(45)直交表之製程參數。Then, according to the designed control factor and the variation level range, an orthogonal table represented by L a (b c ) is established, where a represents the number of experimental groups, b represents the variation level of each factor, and c represents the number of factors; Whether there is interaction between the numbers and factors, total degrees of freedom, etc., select an appropriate orthogonal table for experimental planning. The process parameters of the L 16 (4 5 ) orthogonal table are designed as shown in the table below.
2. 進行製程參數實驗:依據所建立之L16(45)直交表製程參數依序進行16組配置結構之製程實驗,並將每組配置結構之多種品質特性量測結果記錄下來產生對應之目標函數,如下表所示各組不同參數組合之實驗結果的目標函數,分別為特定驅動電流條件下之驅動電壓V、發光亮度L(luminance,cd/m2)及發光效率Y(luminance efficiency)。2. Perform process parameter experiment: According to the established L 16 (4 5 ) orthogonal table process parameters, the process experiments of 16 sets of configuration structures are carried out in sequence, and the measurement results of various quality characteristics of each set of configuration structures are recorded to generate corresponding The objective function, the objective function of the experimental results of each group of different parameter combinations shown in the following table, is the driving voltage V, the luminance L (luminance, cd/m 2 ) and the luminous efficiency Y (luminance efficiency) under specific driving current conditions. .
其中,驅動電壓V之量測係以提供該光電元件1多數定電流(constant current)或定電壓(constant voltage)之驅動電源,取得對應驅動電壓或電流之操作曲線,搭配量測軟體將量測的電壓-電流數據直接紀錄下來,並擷取一固定電流條件下(如電流密度為50mA/cm2)之驅動電壓;發光亮度L之量測係於各定電流之驅動電源下使用分光式色度計(spectracolorometer)量測特定光譜-色度座標CIE(international commission on illumination)之發光亮度,並擷取該固定電流條件之發光亮度;發光效率Y亦稱為電流效率(current efficiency),定義為光子數(photon)比上輸入電荷數(electron),單位為cd/A,係由上述所量測之發光亮度L經由以下轉換計算公式而得:Wherein, the driving voltage V is measured to provide a driving current of a constant current or a constant voltage of the photovoltaic element 1, and an operating curve corresponding to the driving voltage or current is obtained, and the measurement software is measured. The voltage-current data is recorded directly, and a driving voltage is obtained under a fixed current condition (for example, a current density of 50 mA/cm 2 ); the measurement of the luminous brightness L is performed by using a spectroscopic color under a driving current of each constant current. A spectrocolorometer measures the illuminance of a specific spectrum-chromatographic coordinate (CIE) and captures the illuminance of the fixed current condition; the luminous efficiency Y is also referred to as current efficiency, and is defined as The number of photons is the ratio of the input charge (electron) in cd/A, which is obtained from the above-mentioned measured luminance L by the following conversion formula:
發光效率(cd/A)=發光亮度(cd/m2)/(電流密度(mA/cm2)x10)Luminous efficiency (cd/A) = luminance (cd/m 2 ) / (current density (mA/cm 2 ) x 10)
3. 變異數分析(Analysis of Variance,ANOVA):依據上表實驗結果分別對於各目標函數(驅動電壓V、發光亮度L、發光效率Y)作變異數分析,並以T檢驗、Z檢驗、卡方檢驗及F檢驗等其中一統計假設檢定評估各控制因子的影響程度,如本實施例所提供者即以F檢驗來進行假設檢定,以檢驗迴歸方程式Y=β0+β1X1+β2X2+…+βkXk+ε中,自變數(X)是否為影響顯著之因子;檢定量F值越大表示出自同個樣本空間的可能性越小,代表此因子影響力越高。檢驗方式為判斷各自變數(X)之係數β是否為0,若為0,則表示該因子為非顯著因子。統計假設的檢定,就是將參數分為虛無假設(Null Hypothesis)H0和對立假設(Altrnative Hypothesis)H1,經由檢定後從虛無假設和對立假設中擇一用,其假設如下:3. Analysis of Variance (ANOVA): According to the experimental results in the above table, the variance analysis is performed for each objective function (drive voltage V, luminous brightness L, luminous efficiency Y), and the T test, Z test, card One of the statistical hypothesis tests, such as the square test and the F test, evaluates the degree of influence of each control factor. For example, the F test is used to perform the hypothesis test to test the regression equation Y=β0+β1X1+β2X2+...+βkXk+ In ε, whether the independent variable (X) is a factor with significant influence; the larger the quantitative F value, the smaller the probability from the same sample space, and the higher the influence of this factor. The test method is to determine whether the coefficient β of each variable (X) is 0, and if it is 0, it means that the factor is a non-significant factor. The verification of the statistical hypothesis is to divide the parameters into Null Hypothesis H0 and Altrative Hypothesis H1, which are selected from the null hypothesis and the opposite hypothesis after the verification. The hypothesis is as follows:
虛無假設H0:β1=β2=…=βk=0False hypothesis H0: β1 = β2 = ... = βk = 0
對立假設H1:β1,β2,…,βk≠0The opposite hypothesis H1: β1, β2, ..., βk≠0
棄卻準則:若P>α,則拒絕H1Discard criteria: If P>α, reject H1
α是錯誤率,由於假設檢定有時無法完整的呈現描述的問題,因此需要一個可決定拒絕或是接受虛無假設的標準,而此標準可稱為顯著水準或是信心水準α,也就是所謂的錯誤率;若顯著水準α小於0.05,即表示有95%的信心其所假設之答案是對的,其錯誤率只有5%,因此顯著水準α越小越好。α is the error rate. Because the hypothesis test sometimes fails to fully present the described problem, a standard that can decide to reject or accept the null hypothesis is needed. This standard can be called a significant level or a confidence level α, which is called Error rate; if the significant level α is less than 0.05, it means that there is 95% confidence that the assumed answer is correct, and the error rate is only 5%, so the significant level α is as small as possible.
P是機率值,若虛無假設(H0)為真時,則可獲得一個與樣本統計值一樣或更極端之值的機率,在抽樣時會有很大的機會在所抽到的數據中可當成支持虛無假設(H0)為真的證據,亦即比F檢驗所求得之檢定量F值更為強烈的證據,在95%的信心水準內(α值為0.05),對迴歸方程式進行假設檢定,判斷出顯著之因子。P值法的決策準則為:假若P<α,則拒絕虛無假設(H0),若P值>>α,即可表示虛無假設(H0)為正確無誤的假設。由於本實施例以顯著水準(α值)0.05檢定虛無假設,因此可得F檢定表如下:P is the probability value. If the null hypothesis (H0) is true, then a probability of having the same or more extreme value as the sample statistic can be obtained. There is a great chance that the sampled data can be used as the data. Support evidence that the null hypothesis (H0) is true, that is, evidence that is more intense than the F-test's quantitative F value, within 95% confidence level (α value is 0.05), hypothesis verification of the regression equation , to determine a significant factor. The decision criterion of the P-value method is: If P < α, the null hypothesis (H0) is rejected, and if the P value is >> α, the null hypothesis (H0) is assumed to be correct. Since the present embodiment verifies the null hypothesis with a significant level (α value) of 0.05, the F test table can be obtained as follows:
驅動電壓變異數分析結果:由下表可知,本實施例所提供該光電元件1驅動電壓模型在95%的信心水準的檢定量F0.05值可自F檢定表d1=7,d2=8查得對應之檢定值為3.50,遠小於分析結果中之F0值(210.076),所以拒絕虛無假設(H0),表示所選擇的模型因子效應大於實驗殘差,且表中顯示極小的P值(<0.0001),表示對立假設(H1)成立,模型與殘差相同的機率小於0.01%。另外亦藉由P值法來判定各因子是否顯著,由表中可看出7個主效應因子包括各控制因子A、B、C、D、E、二該控制因子A、C組合之高階因子AC以及二該控制因子D、E組合之高階因子DE,其中控制因子B、C、E及高階因子AC、DE之P值小於α值(0.05),因此對立假設(H1)成立(棄卻準則);而控制因子A、D之P值大於α值,應當判斷虛無假設(H0)成立此兩因子為非顯著因子,但由於依據階層原理(hierarchy principle),一個高階項(高階因子AC、DE)應包含由組成高階項的所有低階項(控制因子A、C、D、E),因此因子A、D可判斷對立假設(H1)成立。經由上述之分析中可得知其7個主效應因子A、B、C、D、E、AC、DE皆為顯著的,亦代表這些主效應因子對於驅動電壓之影響效應為顯著的。Driving voltage variation number analysis result: It can be seen from the following table that the detection value of the driving voltage model of the photoelectric element 1 provided in this embodiment is 95% confidence level F 0.05 value can be obtained from the F verification table d1=7, d2=8 The corresponding verification value is 3.50, which is much smaller than the F 0 value (210.076) in the analysis result, so the null hypothesis (H0) is rejected, indicating that the selected model factor effect is greater than the experimental residual, and the table shows a very small P value (< 0.0001), indicating that the opposite hypothesis (H1) is established, the probability that the model is the same as the residual is less than 0.01%. In addition, the P-value method is used to determine whether each factor is significant. It can be seen from the table that the seven main effect factors include the high-order factors of each control factor A, B, C, D, E, and the combination of the control factors A and C. AC and the higher-order factor DE of the combination of the control factors D and E, wherein the P values of the control factors B, C, E and the higher-order factors AC and DE are smaller than the α value (0.05), so the opposite hypothesis (H1) is established (abandonment criterion) And the P values of the control factors A and D are greater than the alpha value, it should be judged that the null hypothesis (H0) is established as the non-significant factor, but because of the hierarchical principle, a high-order term (high-order factor AC, DE) ) should contain all the low-order terms (control factors A, C, D, E) that make up the high-order term, so the factors A, D can determine that the opposite hypothesis (H1) holds. Through the above analysis, it can be seen that the seven main effect factors A, B, C, D, E, AC, and DE are all significant, and also the effect of these main effect factors on the driving voltage is significant.
發光亮度變異數分析結果:由下表可知,本實施例所提供該光電元件1發光亮度模型在95%的信心水準的檢定量F0.05值可自F檢定表d1=5,d2=10查得對應之檢定值為3.33,小於F0值23.346,因此拒絕虛無假設(H0),所選的模型因子效應大於實驗殘差,且表中顯示極小的P值(<0.0001),表示對立假設(H1)成立,模型與殘差相同的機率小於0.01%。再來藉由P值法來判定各因子是否顯著,依照棄卻準則及階層原理來判斷出,5個主效應因子包括控制因子C、D、E、高階因子CE以及C2,因此於發光亮度模型中這5個主效應因子對於發光亮度之影響效應為顯著的。Luminescence brightness variation number analysis result: It can be seen from the following table that the detection value F 0.05 value of the luminous brightness model of the photoelectric element 1 provided by the present embodiment at 95% confidence level can be obtained from the F verification table d1=5, d2=10 The corresponding verification value is 3.33, which is less than the F 0 value of 23.346, so the null hypothesis (H0) is rejected, the selected model factor effect is greater than the experimental residual, and the table shows a very small P value (<0.0001), indicating the opposite hypothesis (H1). When established, the probability of the model being the same as the residual is less than 0.01%. Then, the P value method is used to determine whether each factor is significant. According to the discarding criterion and the hierarchical principle, the five main effect factors include the control factors C, D, E, the higher order factor CE and C 2 , so The effect of these five main effect factors on the brightness of the luminescence in the model is significant.
發光效率變異數分析結果:由下表可知,本實施例所提供該光電元件1發光亮度模型在95%的信心水準的檢定量F0.05值可自F檢定表d1=5,d2=10查得對應之檢定值為3.33,小於F0值24.691,因此拒絕虛無假設(H0),所選的模型因子效應大於實驗殘差,且表中顯示極小的P值(<0.0001),表示對立假設成立(H1),模型與殘差相同的機率小於0.01%。再來藉由P值法來判定各因子是否顯著,依照棄卻準則及階層原理來判斷出,5個主效應因子包括控制因子C、D、E、高階因子CE以及C2,表示發光亮度模型之5個主效應因子對於發光效率之影響效應為顯著的。Luminous efficiency variation number analysis result: It can be seen from the following table that the detection value F 0.05 value of the luminous intensity model of the photoelectric element 1 provided by the present embodiment at 95% confidence level can be obtained from the F verification table d1=5, d2=10 The corresponding verification value is 3.33, which is less than the F 0 value of 24.691, so the null hypothesis (H0) is rejected, the selected model factor effect is greater than the experimental residual, and the table shows a very small P value (<0.0001), indicating that the opposite hypothesis is true ( H1), the probability of the model being the same as the residual is less than 0.01%. Then, the P value method is used to determine whether each factor is significant. According to the discarding criterion and the hierarchical principle, the five main effect factors include the control factors C, D, E, the higher order factor CE and C 2 , indicating the illuminance brightness model. The effects of the five main effect factors on luminous efficiency are significant.
4. 迴歸分析:透過將實驗結果經由變異數分析可定義出影響有機發光二極體元件之該等品質特性的顯著因子為電洞注入層、電洞傳輸層、電子傳輸層、發光層及摻雜濃度,且可建立出有機發光二極體元件其驅動電壓、發光亮度、發光效率之反應曲面方程式,分別如下:4. Regression analysis: By analyzing the experimental results through the analysis of the variance, the significant factors affecting the quality characteristics of the organic light-emitting diode elements are the hole injection layer, the hole transport layer, the electron transport layer, the light-emitting layer and the blending. The impurity concentration and the reaction surface equation of the driving voltage, the illuminating brightness and the luminous efficiency of the organic light emitting diode element can be established as follows:
驅動電壓=-3.803+0.048A+0.042B+0.157C+1.423D+0.146E-1.153×10-3A*C-0.041D*EDriving voltage=-3.803+0.048A+0.042B+0.157C+1.423D+0.146E-1.153×10 -3 A*C-0.041D*E
發光亮度=-3122.387+220.436C+361.250D+46.557E-1.803C*E-1.54C2 Luminous brightness=-3122.387+220.436C+361.250D+46.557E-1.803C*E-1.54C 2
發光效率=-6.291+0.445C+0.720D+0.093E-3.654×10-3C*E-3.108×10-3C2 Luminous efficiency=-6.291+0.445C+0.720D+0.093E-3.654×10 -3 C*E-3.108×10 -3 C 2
5. 殘差分析:對迴歸分析後所建立出的回歸方程式做適當性檢驗(Model Adequacy Checking),其中殘差(Residual)的定義即為實驗值(Actual)與預測值(Predicted)之間的差異,其分析結果如下表所示,其中實際值為步驟2對該光電元件1個品質特性之實驗結果,而預測值是將步驟2中各組實驗之製程參數帶入各反應曲面方程式所分別求得的值。透過對殘差的分析研究,均可發現其基本假設的違反和模型不適當的型態。5. Residual analysis: Model Adequacy Checking is performed on the regression equation established after regression analysis, where the definition of Residual is between experimental value and predicted value (Predicted). Difference, the analysis results are shown in the following table, wherein the actual value is the experimental result of the quality characteristics of the photovoltaic element in step 2, and the predicted value is the process parameter of each group of experiments in step 2 is brought into each reaction surface equation respectively The value obtained. Through the analysis of the residuals, we can find the violation of its basic assumptions and the inappropriate model of the model.
6. 常態檢定,分別繪製上表驅動電壓、發光亮度、發光效率其殘差之常態機率圖(Normal Probability Plot),配合第四至第六圖參照,並算出此分析資料的平均值、標準差、樣本數與P值來進行檢定。假若在常態檢定中殘差接近常態分配,則殘差值所構成之圖形趨近一條直線。由各圖可得知其驅動電壓、發光亮度、發光效率之殘差值的分佈曲線皆趨近為一直線,因此可判定其接近常態分配。另外在95%信心水準(α=0.05)條件下,由圖中之分析資料可看出驅動電壓、發光亮度、發光效率之P值(0.847、0.159、0.202)皆大過於α值(0.05),依據棄卻準則來判斷虛無假設成立(H0),殘差為常態分配,其研究中所建構之迴歸模型為一個合理且具有可信度的模型。6. Normal calibration, draw the normal Probability Plot of the driving voltage, illuminance, and luminous efficiency of the above table, and refer to the fourth to sixth figures, and calculate the average and standard deviation of the analysis data. The number of samples and the value of P are used for verification. If the residual is close to the normal distribution in the normal state test, the pattern formed by the residual value approaches a straight line. It can be seen from the respective graphs that the distribution curves of the residual voltages of the driving voltage, the illuminating luminance, and the luminous efficiency are all in a straight line, so that it can be judged to be close to the normal distribution. In addition, under the condition of 95% confidence level (α=0.05), it can be seen from the analysis data in the figure that the P value (0.847, 0.159, 0.202) of the driving voltage, the illuminating brightness and the luminous efficiency are all larger than the α value (0.05). According to the abandonment criterion, the null hypothesis is established (H0), and the residual is the normal distribution. The regression model constructed in the research is a reasonable and credible model.
7. 最佳化製程參數驗證:將品質特性中驅動電壓設定為望小特性,發光亮度與發光效率設定為望大特性,並依照發光效率數值由大到小適配出三組最佳化製程參數,再計算各組製程參數對應之品質特性預估值,如下表所示,配合第七至第九圖參照,為此三組不同製程參數下驅動電壓V、發光亮度L及發光效率Y之各品質特性之曲線圖。接著進行元件製程試驗,驗證各組製程參數之各品質特性量測數據與最佳化預估值的誤差;經由對各組製程參數的驗證量測可知,當有機發光二極體元件結構為Device B-II,其元件在電流密度50 mA/cm2時,驅動電壓為8.28 V與所預估之結果(9.28V)誤差10.7%,發光亮度為4701.9 cd/m2(與預估值誤差3%),發光效率為9.48 cd/A(與預估值誤差3.15%)。因此,對於設定為望大特性之發光亮度與發光效率而言,最佳化製程參數之驗證量測數據與最佳化預估值的誤差皆在10%以下,甚至以Device B-I及B-II具有最大發光效率之預估參數所得驗證量測數據,可與最佳化預估值的誤差小於5%且更低。7. Optimize the process parameter verification: set the driving voltage in the quality characteristic to the small characteristic, and set the luminous brightness and luminous efficiency to the large characteristic, and adapt the three sets of optimization processes according to the luminous efficiency values from large to small. Parameters, and then calculate the estimated value of the quality characteristics corresponding to each group of process parameters, as shown in the following table, with reference to the seventh to ninth drawings, for the three sets of different process parameters, the driving voltage V, the luminous brightness L and the luminous efficiency Y A graph of each quality characteristic. Then, the component process test is performed to verify the error of each quality characteristic measurement data and the optimized estimation value of each group of process parameters; the verification measurement of each group of process parameters shows that when the organic light emitting diode component structure is Device B-II, when the current density is 50 mA/cm 2 , the driving voltage is 8.28 V and the predicted result (9.28 V) is 10.7%, and the luminance is 4701.9 cd/m 2 (according to the estimated value error 3 %), luminous efficiency is 9.48 cd/A (error of 3.15% from the estimated value). Therefore, for the brightness and the luminous efficiency of the set-up characteristic, the error of the verification measurement data and the optimization estimation value of the optimized process parameters are all below 10%, even with Device BI and B-II. The verification measurement data obtained from the estimated parameters with the maximum luminous efficiency can be less than 5% and lower than the optimized estimation value.
綜合上述可知,本發明所提供光電元件製程參數之最佳化分析方法係利用田口法進行實驗設計之規劃,並使用統計檢定的方法(變異數分析、迴歸分析)進行實驗數據之分析,即可產生多數品質特性的對應迴歸方程式;最後利用殘差分析及常態檢定確定各該迴歸方程式可得對應該光電元件之各品質特性之製程參數最佳化組合。因此當以其中之一品質特性為望小特性,如驅動電壓,其餘如發光亮度或發光效率為望大特性,所得最佳參數組合而製作之光電元件經由實際對各品質特性量測後,證實的確為元件最佳發光效率之結構參數。In summary, the optimal analysis method for the process parameters of the photovoltaic element provided by the present invention is to use the Taguchi method for the experimental design planning, and the statistical verification method (variation number analysis, regression analysis) is used to analyze the experimental data. Corresponding regression equations for most quality characteristics are generated. Finally, residual analysis and normality determination are used to determine the regression equations to obtain the optimal combination of process parameters corresponding to the quality characteristics of the photovoltaic elements. Therefore, when one of the quality characteristics is regarded as a small characteristic, such as a driving voltage, and the rest, such as the luminance of the light or the luminous efficiency, is a large characteristic, the photoelectric element produced by combining the obtained optimal parameters is verified by actually measuring the quality characteristics. It is indeed the structural parameter of the best luminous efficiency of the component.
綜上所陳,本發明於前述實施例中所揭露的構成元件及對應之影響因子,僅為舉例說明,並非用來限制本案之範圍,其他影響因子的等效參數分析方法,亦應為本案之申請專利範圍所涵蓋而不在此限。In summary, the constituent elements and corresponding influence factors disclosed in the foregoing embodiments of the present invention are merely illustrative, and are not intended to limit the scope of the present invention, and the equivalent parameter analysis method of other influencing factors should also be the case. The scope of the patent application is covered and not limited to this.
1...光電元件1. . . Optoelectronic component
10...基板10. . . Substrate
20...陽極20. . . anode
30...電洞注入層30. . . Hole injection layer
40...電洞傳輸層40. . . Hole transport layer
50...發光層50. . . Luminous layer
60...電子傳輸層60. . . Electronic transport layer
70...電子注入層70. . . Electron injection layer
80...陰極80. . . cathode
第一圖為本發明最佳實施例所應用分析之光電元件之裝置示意圖;BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view of an apparatus for analyzing photovoltaic elements applied to a preferred embodiment of the present invention;
第二圖為第一圖所示光電元件以有機發光二極體為例之能帶結構圖;The second figure is an energy band structure diagram of the photoelectric element shown in the first figure, taking an organic light emitting diode as an example;
第三圖為本發明所提供最佳實施例之流程圖;The third drawing is a flow chart of a preferred embodiment of the present invention;
第四圖為本發明最佳實施例對該光電元件之驅動電壓回歸方程式之殘差分佈;4 is a residual distribution of a regression equation of a driving voltage of the photovoltaic element according to a preferred embodiment of the present invention;
第五圖為本發明最佳實施例對該光電元件之發光亮度回歸方程式之殘差分佈;Figure 5 is a diagram showing the residual distribution of the regression equation of the luminance of the photovoltaic element according to the preferred embodiment of the present invention;
第六圖為本發明最佳實施例對該光電元件之發光效率回歸方程式之殘差分佈;Figure 6 is a diagram showing the residual distribution of the regression equation of the luminous efficiency of the photovoltaic element according to the preferred embodiment of the present invention;
第七圖為本發明最佳實施例所產生之三組最佳化製程參數之預估驅動電壓之曲線圖;Figure 7 is a graph of estimated drive voltages for three sets of optimized process parameters produced by the preferred embodiment of the present invention;
第八圖為本發明最佳實施例所產生之三組最佳化製程參數之預估發光亮度之曲線圖;Figure 8 is a graph showing predicted luminous brightness of three sets of optimized process parameters produced by the preferred embodiment of the present invention;
第九圖為本發明最佳實施例所產生之三組最佳化製程參數之預估發光效率之曲線圖。The ninth graph is a graph of the predicted luminous efficiency of the three sets of optimized process parameters produced by the preferred embodiment of the present invention.
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