TW201303091A - 非金屬熔液定向凝固方法及其裝置 - Google Patents
非金屬熔液定向凝固方法及其裝置 Download PDFInfo
- Publication number
- TW201303091A TW201303091A TW101124193A TW101124193A TW201303091A TW 201303091 A TW201303091 A TW 201303091A TW 101124193 A TW101124193 A TW 101124193A TW 101124193 A TW101124193 A TW 101124193A TW 201303091 A TW201303091 A TW 201303091A
- Authority
- TW
- Taiwan
- Prior art keywords
- frequency
- alternating current
- inductor
- melt
- crucible
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000007711 solidification Methods 0.000 title claims abstract description 46
- 230000008023 solidification Effects 0.000 title claims abstract description 46
- 229910052755 nonmetal Inorganic materials 0.000 title claims abstract description 6
- 239000000155 melt Substances 0.000 claims abstract description 43
- 239000013078 crystal Substances 0.000 claims description 82
- 239000007788 liquid Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000007796 conventional method Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 22
- 229910052732 germanium Inorganic materials 0.000 description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 16
- 239000002245 particle Substances 0.000 description 9
- 239000012071 phase Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 241000723382 Corylus Species 0.000 description 1
- 235000007466 Corylus avellana Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/007—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE201110051608 DE102011051608A1 (de) | 2011-07-06 | 2011-07-06 | Verfahren und Vorrichtung zum gerichteten Erstarren einer Nichtmetall-Schmelze |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201303091A true TW201303091A (zh) | 2013-01-16 |
Family
ID=46466523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101124193A TW201303091A (zh) | 2011-07-06 | 2012-07-05 | 非金屬熔液定向凝固方法及其裝置 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE102011051608A1 (de) |
| TW (1) | TW201303091A (de) |
| WO (1) | WO2013004745A1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110886016B (zh) * | 2019-12-27 | 2021-04-13 | 大连理工大学 | 一种使多晶硅中磷元素均匀分布的装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10349339A1 (de) | 2003-10-23 | 2005-06-16 | Crystal Growing Systems Gmbh | Kristallzüchtungsanlage |
| DE102005037293A1 (de) * | 2005-08-08 | 2007-02-15 | Basf Ag | Integriertes Verfahren zur Herstellung von Trioxan aus Formaldehyd |
| JP5486190B2 (ja) | 2006-01-20 | 2014-05-07 | エイエムジー・アイデアルキャスト・ソーラー・コーポレーション | 光電変換用単結晶成型シリコンおよび単結晶成型シリコン本体の製造方法および装置 |
| DE102006020234A1 (de) | 2006-04-27 | 2007-10-31 | Deutsche Solar Ag | Ofen für Nichtmetall-Schmelzen |
| DE102007026298A1 (de) * | 2007-06-06 | 2008-12-11 | Freiberger Compound Materials Gmbh | Anordnung und Verfahren zur Herstellung eines Kristalls aus der Schmelze eines Rohmaterials sowie Einkristall |
| DE102007028548B4 (de) * | 2007-06-18 | 2009-07-16 | Forschungsverbund Berlin E.V. | Vorrichtung und Verfahren zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen |
| AU2008279417B2 (en) * | 2007-07-20 | 2012-06-21 | Amg Idealcast Solar Corporation | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| DE102007035756B4 (de) | 2007-07-27 | 2010-08-05 | Deutsche Solar Ag | Verfahren zur Herstellung von Nichteisenmetall-Blöcken |
| DE102008059521B4 (de) | 2008-11-28 | 2011-11-17 | Forschungsverbund Berlin E.V. | Verfahren zum Erstarren einer Nichtmetall-Schmelze |
| DE102009046845A1 (de) * | 2009-11-18 | 2011-06-01 | Forschungsverbund Berlin E.V. | Kristallisationsanlage und Kristallisationsverfahren |
| WO2011076157A1 (de) | 2009-12-21 | 2011-06-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und anordnung zur beeinflussung der schmelzkonvektion bei der herstellung eines festkörpers aus einer elektrisch leitfähigen schmelze |
-
2011
- 2011-07-06 DE DE201110051608 patent/DE102011051608A1/de not_active Ceased
-
2012
- 2012-07-04 WO PCT/EP2012/063036 patent/WO2013004745A1/de not_active Ceased
- 2012-07-05 TW TW101124193A patent/TW201303091A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE102011051608A1 (de) | 2013-01-10 |
| WO2013004745A1 (de) | 2013-01-10 |
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