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TW201309134A - Treatment solution for forming migration suppression layer, and method for manufacturing laminate having migration suppression layer - Google Patents

Treatment solution for forming migration suppression layer, and method for manufacturing laminate having migration suppression layer Download PDF

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Publication number
TW201309134A
TW201309134A TW101117602A TW101117602A TW201309134A TW 201309134 A TW201309134 A TW 201309134A TW 101117602 A TW101117602 A TW 101117602A TW 101117602 A TW101117602 A TW 101117602A TW 201309134 A TW201309134 A TW 201309134A
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wiring
substrate
copper
migration
layer
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TW101117602A
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Chinese (zh)
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TWI516181B (en
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Kazumori Minami
Masataka Satou
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Fujifilm Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14Nitrogen-containing compounds
    • C23F11/149Heterocyclic compounds containing nitrogen as hetero atom
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/06Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
    • C23C22/48Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 not containing phosphates, hexavalent chromium compounds, fluorides or complex fluorides, molybdates, tungstates, vanadates or oxalates
    • C23C22/52Treatment of copper or alloys based thereon
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/285Permanent coating compositions
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/07Electric details
    • H05K2201/0753Insulation
    • H05K2201/0769Anti metal-migration, e.g. avoiding tin whisker growth
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12Using specific substances
    • H05K2203/122Organic non-polymeric compounds, e.g. oil, wax or thiol
    • H05K2203/124Heterocyclic organic compounds, e.g. azole, furan

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)

Abstract

An object of the disclosure is to provide a treatment solution for forming a migration layer for forming a migration suppression layer which inhibits migration of copper ions between wirings and enhances an insulation reliability between the wirings. The treatment solution of the disclosure is a treatment solution for forming the migration suppression layer which inhibits migration of ions in copper wirings or copper alloy wirings. The treatment solution contains azole compounds and water, and has a dissolved oxygen content of 7.0 ppm or less.

Description

遷移抑制層形成用處理液以及具有遷移抑制層的積層體的製造方法 Process for forming migration inhibiting layer and method for producing laminated body having migration inhibiting layer

本發明是有關於一種遷移抑制層形成用處理液、以及具有使用該處理液所獲得的遷移抑制層的積層體的製造方法。 The present invention relates to a treatment liquid for forming a migration suppression layer and a method for producing a laminate having a migration suppression layer obtained by using the treatment liquid.

近年來,伴隨電子機器的高功能化等的要求,電子零件的高密度積體化、高密度安裝化等正在發展,該些電子零件中所使用的印刷配線基板等亦正進行小型化及高密度化。此種狀況下,印刷配線基板中的配線的間隔進一步狹小化,為了防止配線間的短路,亦要求配線間的絕緣可靠性進一步提昇。 In recent years, with the demand for higher functionality of electronic devices, high-density integration and high-density mounting of electronic components are progressing, and printed wiring boards and the like used in these electronic components are being miniaturized and high. Densification. In such a situation, the interval between the wirings in the printed wiring board is further narrowed, and in order to prevent short-circuiting between the wirings, the insulation reliability between the wirings is further required to be improved.

作為阻礙銅或銅合金的配線間的絕緣性的主要原因之一,已知有所謂的銅離子的遷移。其為如下的現象:若於配線電路間等產生電位差,則構成配線的銅因水分的存在而離子化,所溶出的銅離子移動至鄰接的配線。藉由此種現象,所溶出的銅離子隨時間經過得到還原而成為銅化合物並成長為樹枝狀結晶(dendrite)(樹枝狀晶)狀,結果使配線間短路。 As one of the factors that hinder the insulation between the wiring of copper or a copper alloy, so-called migration of copper ions is known. This is a phenomenon in which, when a potential difference occurs between wiring circuits or the like, copper constituting the wiring is ionized by the presence of moisture, and the eluted copper ions move to the adjacent wiring. By such a phenomenon, the eluted copper ions are reduced over time to become a copper compound and grow into a dendrite (dendritic crystal) shape, and as a result, the wirings are short-circuited.

作為防止此種遷移的方法,提出有形成使用了苯并三唑的遷移抑制層的技術(專利文獻1及專利文獻2)。更具體而言,於該些文獻中,在配線基板上形成用以抑制銅離子的遷移的層,而謀求配線間的絕緣可靠性的提昇。 As a method of preventing such migration, a technique of forming a migration inhibiting layer using benzotriazole has been proposed (Patent Document 1 and Patent Document 2). More specifically, in these documents, a layer for suppressing migration of copper ions is formed on the wiring substrate, and insulation reliability between wirings is improved.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2001-257451號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-257451

[專利文獻2]日本專利特開平10-321994號公報 [Patent Document 2] Japanese Patent Laid-Open No. Hei 10-321994

另一方面,如上所述,近年來,配線的微細化正急速地發展,而要求配線間的絕緣可靠性進一步提昇。 On the other hand, as described above, in recent years, the miniaturization of wiring is rapidly progressing, and the insulation reliability between wirings is required to be further improved.

本發明者等人對專利文獻1及專利文獻2中所記載的使用了苯并三唑的遷移抑制層進行了研究,結果於配線間確認到銅的樹枝狀結晶的連結,其遷移抑制效果未滿足最近所要求的水準,而需要進一步的改良。 The inventors of the present invention have studied the migration inhibiting layer using benzotriazole described in Patent Document 1 and Patent Document 2, and as a result, it has been confirmed that the copper dendrites are connected between the wirings, and the migration inhibiting effect is not obtained. Meet the latest requirements and need further improvement.

鑒於上述實際情況,本發明的目的在於提供一種遷移層形成用處理液,其用以形成抑制配線間的銅離子的遷移,並提昇配線間的絕緣可靠性的遷移抑制層。 In view of the above circumstances, an object of the present invention is to provide a treatment liquid for forming a migration layer for forming a migration inhibiting layer which suppresses migration of copper ions between wirings and improves insulation reliability between wirings.

另外,本發明的目的在於提供一種具有使用該處理液所獲得的遷移抑制層的積層體的製造方法。 Further, an object of the present invention is to provide a method for producing a laminate having a migration inhibiting layer obtained by using the treatment liquid.

本發明者等人努力研究的結果,發現可藉由以下的構成來解決上述課題。 As a result of intensive studies by the inventors of the present invention, it has been found that the above problems can be solved by the following constitution.

(1)一種遷移抑制層形成用處理液,其用以形成抑制銅配線或銅合金配線中的離子遷移的遷移抑制層,上述遷移抑制層形成用處理液含有唑化合物與水,且溶存氧量為7.0 ppm以下。 (1) A treatment liquid for forming a migration suppression layer for forming a migration inhibiting layer for suppressing ion migration in a copper wiring or a copper alloy wiring, wherein the treatment liquid for forming a migration inhibiting layer contains an azole compound and water, and the dissolved oxygen amount It is below 7.0 ppm.

(2)如(1)所述之遷移抑制層形成用處理液,其中溶存氧量未滿4.0 ppm。 (2) The treatment liquid for forming a migration suppression layer according to (1), wherein the dissolved oxygen amount is less than 4.0 ppm.

(3)如(1)或(2)所述之遷移抑制層形成用處理液, 其中唑化合物包含1,2,3-三唑及/或1,2,4-三唑。 (3) The treatment liquid for forming a migration suppression layer according to (1) or (2), The azole compound comprises 1,2,3-triazole and/or 1,2,4-triazole.

(4)一種具有遷移抑制層的積層體的製造方法,其包括:層形成步驟,使具有基板以及配置於基板上的銅配線或銅合金配線的帶有配線的基板、與如(1)至(3)中任一項所述之遷移抑制層形成用處理液接觸,其後利用溶劑清洗帶有配線的基板,而於銅配線或銅合金配線表面上形成包含唑化合物的遷移抑制層;以及絕緣層形成步驟,於設置有遷移抑制層的帶有配線的基板上形成絕緣層。 (4) A method for producing a laminate having a migration inhibiting layer, comprising: a layer forming step of causing a wiring-attached substrate having a substrate and a copper wiring or a copper alloy wiring disposed on the substrate, and (1) to (3) The treatment liquid for forming a migration suppression layer according to any one of (3), wherein the substrate having the wiring is washed with a solvent, and a migration inhibiting layer containing an azole compound is formed on the surface of the copper wiring or the copper alloy wiring; The insulating layer forming step forms an insulating layer on the wiring-attached substrate provided with the migration inhibiting layer.

(5)一種具有遷移抑制層的積層體的製造方法,其包括如下的層形成步驟:使含有露出配線的積層體與如(1)至(3)中任一項所述之遷移抑制層形成用處理液接觸,其後利用溶劑清洗含有露出配線的積層體,而於所露出的銅配線或銅合金配線表面上形成遷移抑制層,上述含有露出配線的積層體具有基板、配置於基板上的銅配線或銅合金配線以及絕緣層,上述絕緣層配置於基板上,且以使銅配線或銅合金配線的一部分露出的方式覆蓋銅配線及銅合金配線。 (5) A method for producing a layered body having a migration inhibiting layer, comprising the step of forming a layered body containing the exposed wiring and the migration inhibiting layer according to any one of (1) to (3) After the contact with the treatment liquid, the laminate including the exposed wiring is washed with a solvent, and a migration inhibiting layer is formed on the exposed copper wiring or copper alloy wiring surface. The laminated body including the exposed wiring has a substrate and is disposed on the substrate. In the copper wiring or the copper alloy wiring and the insulating layer, the insulating layer is disposed on the substrate, and the copper wiring and the copper alloy wiring are covered so that a part of the copper wiring or the copper alloy wiring is exposed.

根據本發明,可提供一種遷移層形成用處理液,其用以形成抑制配線間的銅離子的遷移,並提昇配線間的絕緣可靠性的遷移抑制層。 According to the present invention, it is possible to provide a treatment liquid for forming a migration layer for forming a migration inhibiting layer which suppresses migration of copper ions between wirings and improves insulation reliability between wirings.

另外,根據本發明,可提供一種具有使用該處理液所 獲得的遷移抑制層的積層體的製造方法。 Further, according to the present invention, it is possible to provide a treatment liquid using the same A method for producing a laminate of the obtained migration inhibiting layer.

以下,對本發明的遷移抑制層形成用處理液、以及具有使用該處理液所獲得的遷移抑制層的積層體的製造方法的較佳形態進行說明。 In the following, a preferred embodiment of the method for producing a layered body for treating a migration inhibiting layer of the present invention and a layered body having a migration inhibiting layer obtained by using the treating liquid will be described.

首先,對先前技術的問題與本發明的特徵進行詳述。 First, the problems of the prior art and the features of the present invention will be described in detail.

本發明者等人對先前技術(專利文獻1中所記載的發明)的問題進行研究的結果,首先,發現若存在於處理液中的溶存氧量多,則所形成的遷移抑制層的功能並不充分。若處理液中的溶存氧量多,則銅配線或銅合金配線表面的腐蝕得到促進。因此,尤其於高濕、加電壓環境下會加速銅離子的產生,而導致遷移抑制層的離子捕捉能力下降,作為結果,無法顯現充分的遷移抑制功能。 As a result of examining the problems of the prior art (the invention described in Patent Document 1), the inventors of the present invention first discovered that if the amount of dissolved oxygen present in the treatment liquid is large, the function of the migration inhibiting layer formed is insufficient. When the amount of dissolved oxygen in the treatment liquid is large, corrosion of the surface of the copper wiring or the copper alloy wiring is promoted. Therefore, the generation of copper ions is accelerated particularly in a high-humidity/voltage-increasing environment, and the ion trapping ability of the migration inhibiting layer is lowered, and as a result, a sufficient migration suppressing function cannot be exhibited.

另外,本發明者等人發現若於銅配線或銅合金配線(以下,亦簡稱為配線)間的基板上殘存有苯并三唑等先前的遷移抑制劑,則於配線間,在帶有配線的基板上所設置的絕緣層與基板之間產生密接不良等,而成為短路的原因。另一方面,若為了去除此種配線間所存在的遷移抑制劑而進行基板的清洗,則銅配線或銅合金配線上的遷移抑制劑亦同時被去除,而顯現不出所期望的效果。 In addition, the inventors of the present invention found that if a previous migration inhibitor such as benzotriazole remains on the substrate between the copper wiring or the copper alloy wiring (hereinafter, simply referred to as wiring), wiring is provided between the wirings. A poor connection or the like is formed between the insulating layer provided on the substrate and the substrate, which causes a short circuit. On the other hand, if the substrate is cleaned in order to remove the migration inhibitor existing in the wiring, the migration inhibitor on the copper wiring or the copper alloy wiring is simultaneously removed, and the desired effect is not exhibited.

本發明者等人基於上述見解,發現藉由使用包含唑化合物、並顯示規定的溶存氧量的遷移抑制層形成用處理液,可解決上述先前技術的問題。 Based on the above findings, the inventors of the present invention have found that the above-described problems of the prior art can be solved by using a treatment liquid for forming a migration inhibiting layer which contains an azole compound and exhibits a predetermined amount of dissolved oxygen.

即,藉由使用溶存氧量為規定值以下的處理液,而進 一步抑制銅配線或銅合金配線的腐蝕,並維持唑化合物對於銅離子的配位能力。作為結果,銅離子的遷移得到抑制。 In other words, by using a treatment liquid having a dissolved oxygen amount of a predetermined value or less, The corrosion of the copper wiring or the copper alloy wiring is suppressed in one step, and the coordination ability of the azole compound to the copper ions is maintained. As a result, migration of copper ions is suppressed.

進而,藉由使用作為雜5員環化合物的唑化合物,即便是利用溶劑的清洗處理,配線上的唑化合物亦會殘存,因此,可去除可能成為配線間的短路的原因的殘存於配線間的遷移抑制劑,並於配線上形成遷移抑制層。 Further, by using an azole compound as a heterocyclic ring compound, the azole compound on the wiring remains even after the cleaning treatment with a solvent, so that it is possible to remove the wiring remaining between the wirings, which may cause a short circuit between wirings. The migration inhibitor is formed and a migration inhibiting layer is formed on the wiring.

首先,對本發明中所使用的遷移抑制層形成用處理液進行詳述,其後對具有使用該處理液所獲得的遷移抑制層的積層體的製造方法進行詳述。 First, the treatment liquid for forming a migration suppression layer used in the present invention will be described in detail, and thereafter, a method for producing a laminate having a migration suppression layer obtained by using the treatment liquid will be described in detail.

[遷移抑制層形成用處理液] [Treatment liquid for forming migration inhibiting layer]

本發明的遷移抑制層形成用處理液(銅離子擴散抑制層形成用處理液)是用以形成抑制銅配線或銅合金配線中的離子遷移的遷移抑制層的處理液。該處理液含有唑化合物與水,且溶存氧量為7.0 ppm以下。 The treatment liquid for forming a migration suppression layer (the treatment liquid for forming a copper ion diffusion suppression layer) of the present invention is a treatment liquid for forming a migration suppression layer for suppressing ion migration in a copper wiring or a copper alloy wiring. The treatment liquid contains an azole compound and water, and the dissolved oxygen amount is 7.0 ppm or less.

以下,對處理液中所含有的成分(唑化合物、水等)進行詳述。 Hereinafter, the components (azole compound, water, etc.) contained in the treatment liquid will be described in detail.

(唑化合物) (azole compound)

本處理液中所含有的唑化合物是於環內包含1個以上氮原子的單環式的雜5員環化合物。例如可列舉:氮原子數為2個的二唑、氮原子數為3個的三唑、及氮原子數為4個的四唑等。更具體而言,可列舉:1,2,3-三唑、1,2,4-三唑、1,2,4-三唑-3-羧基醯胺、四唑等。其中,就銅離子的遷移抑制效果更優異的觀點而言,較佳為1,2,3-三唑、及1,2,4-三唑。 The azole compound contained in the treatment liquid is a monocyclic heterocyclic 5-membered ring compound containing one or more nitrogen atoms in the ring. For example, a diazole having two nitrogen atoms, a triazole having three nitrogen atoms, and a tetrazole having four nitrogen atoms may be mentioned. More specifically, 1,2,3-triazole, 1,2,4-triazole, 1,2,4-triazole-3-carboxydecylamine, tetrazole, etc. are mentioned. Among them, from the viewpoint of further excellent copper ion migration inhibition effect, 1,2,3-triazole and 1,2,4-triazole are preferred.

處理液中亦可含有2種以上的唑化合物。 Two or more kinds of azole compounds may be contained in the treatment liquid.

另外,只要無損本發明的效果,則該唑化合物亦可具有烷基、羧基、羥基、胺基等取代基。 Further, the azole compound may have a substituent such as an alkyl group, a carboxyl group, a hydroxyl group or an amine group as long as the effects of the present invention are not impaired.

處理液中的唑化合物的總含量並無特別限制,但就遷移抑制層的形成容易性、及控制遷移抑制層的附著量的觀點而言,相對於處理液總量,較佳為0.01質量%~10質量%,更佳為0.1質量%~5質量%,特佳為0.25質量%~5質量%。若唑化合物的總含量過多,則難以控制遷移抑制層的堆積量。若唑化合物的總含量過少,則至變成所期望的遷移抑制層的堆積量為止會耗費時間,而生產性差。 The total content of the azole compound in the treatment liquid is not particularly limited. However, from the viewpoint of easiness of formation of the migration inhibiting layer and control of the amount of adhesion of the migration inhibiting layer, it is preferably 0.01% by mass based on the total amount of the treatment liquid. ~10% by mass, more preferably 0.1% by mass to 5% by mass, particularly preferably 0.25% by mass to 5% by mass. When the total content of the oxazole compound is too large, it is difficult to control the amount of deposition of the migration inhibiting layer. When the total content of the oxazole compound is too small, it takes time until it becomes a desired amount of deposition of the migration inhibiting layer, and productivity is inferior.

另一方面,當使用防蝕劑等中通常所使用的苯并三唑等作為替代品時,大部分的苯并三唑因後述利用溶劑的清洗,而自銅配線或銅合金配線上被沖走,無法獲得所期望的效果。另外,若為包含過剩的蝕刻劑的含有苯并三唑的處理液、或包含具有蝕刻能力的咪唑化合物的處理液,則形成於銅配線或銅合金配線上的有機皮膜中包含過剩的銅離子,該皮膜無遷移抑制能力,無法獲得所期望的效果。 On the other hand, when a benzotriazole or the like which is usually used in a corrosion inhibitor or the like is used as a substitute, most of the benzotriazole is washed away from the copper wiring or the copper alloy wiring by cleaning with a solvent described later. , can not get the desired effect. Further, in the case of a treatment liquid containing benzotriazole containing an excessive etchant or a treatment liquid containing an imidazole compound having an etching ability, the organic film formed on the copper wiring or the copper alloy wiring contains excessive copper ions. The film has no migration inhibiting ability and the desired effect cannot be obtained.

於處理液中,通常含有水作為溶劑。所使用的水的種類並無特別限制,例如可列舉蒸餾水、離子交換水、自來水、及井水。其中,蒸餾水因離子等雜質少而較佳。 In the treatment liquid, water is usually contained as a solvent. The type of water to be used is not particularly limited, and examples thereof include distilled water, ion-exchanged water, tap water, and well water. Among them, distilled water is preferred because of less impurities such as ions.

水的含量並無特別限制,但就處理液的處理性等的觀點而言,相對於處理液總量,較佳為90質量%~99.9質量%,更佳為95質量%~99.9質量%,進而更佳為95質量%~97.5質量%。 The content of the water is not particularly limited, but is preferably from 90% by mass to 99.9% by mass, and more preferably from 95% by mass to 99.9% by mass, based on the total amount of the treatment liquid, from the viewpoint of the handleability of the treatment liquid. More preferably, it is 95 mass% - 97.5 mass%.

再者,於處理液中,亦可於無損本發明的效果的範圍內含有水以外的溶劑。 Further, in the treatment liquid, a solvent other than water may be contained in the range which does not impair the effects of the present invention.

例如可列舉:醇系溶劑(例如甲醇、乙醇、異丙醇)、酮系溶劑(例如丙酮、甲基乙基酮、環己酮)、醯胺系溶劑(例如甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮)、腈系溶劑(例如乙腈、丙腈)、酯系溶劑(例如乙酸甲酯、乙酸乙酯)、碳酸酯系溶劑(例如碳酸二甲酯、碳酸二乙酯)、醚系溶劑、鹵素系溶劑等有機溶劑。可將該些溶劑的2種以上混合使用。 For example, an alcoholic solvent (for example, methanol, ethanol, and isopropyl alcohol), a ketone solvent (for example, acetone, methyl ethyl ketone, and cyclohexanone), a guanamine solvent (for example, formazan, dimethyl Indoleamine, N-methylpyrrolidone), nitrile solvent (eg acetonitrile, propionitrile), ester solvent (eg methyl acetate, ethyl acetate), carbonate solvent (eg dimethyl carbonate, carbonic acid) An organic solvent such as an ethyl ester), an ether solvent or a halogen solvent. Two or more kinds of these solvents may be used in combination.

本處理液中的溶存氧量為7.0 ppm以下。藉由溶存氧量為該範圍內,銅配線或銅合金配線中的銅的腐蝕等得到抑制,上述唑化合物的吸附進一步進行,並且可形成銅離子捕捉能力高的遷移抑制層。進而,就可形成遷移抑制功能更高的遷移抑制層的觀點而言,較佳為溶存氧量未滿4.0 ppm。 The amount of dissolved oxygen in the treatment liquid is 7.0 ppm or less. When the amount of dissolved oxygen is within this range, corrosion of copper in the copper wiring or the copper alloy wiring is suppressed, and the adsorption of the azole compound is further progressed, and a migration inhibiting layer having a high copper ion capturing ability can be formed. Further, from the viewpoint of forming a migration inhibiting layer having a higher migration inhibiting function, it is preferred that the dissolved oxygen amount is less than 4.0 ppm.

另一方面,若溶存氧量超過7.0 ppm,則當帶有配線的基板與處理液接觸時,於銅配線或銅合金配線表面產生腐蝕,且在高濕、加電壓環境下加速銅離子的產生,因此使用遷移抑制層的離子捕捉能力,而無法顯現充分的遷移抑制功能。 On the other hand, when the dissolved oxygen amount exceeds 7.0 ppm, when the wiring-attached substrate is brought into contact with the treatment liquid, corrosion occurs on the surface of the copper wiring or the copper alloy wiring, and the generation of copper ions is accelerated in a high-humidity and voltage-increasing environment. Therefore, the ion trapping ability of the migration inhibiting layer is used, and a sufficient migration inhibiting function cannot be exhibited.

用以使處理液的溶存氧量變成規定值以下的方法並無特別限制,可使用公知的方法。例如,較佳為藉由除氣來減少處理液中的氧,更具體而言,可列舉:利用惰性氣體的起泡,利用高分子膜、無機膜等膜的去除,利用真空的 氣體成分去除,或將該些加以組合的方法。 The method for setting the dissolved oxygen amount of the treatment liquid to a predetermined value or less is not particularly limited, and a known method can be used. For example, it is preferable to reduce oxygen in the treatment liquid by degassing, and more specifically, it is possible to use a foam such as a polymer membrane or an inorganic membrane by foaming with an inert gas, and to use a vacuum. Gas component removal, or a combination of these.

作為惰性氣體,較佳為使用氮氣、氬氣、氦氣的任一種,或將該些組合而成者。另外,為了排除污染的影響,該些惰性氣體較佳為使用純度儘可能高者。 As the inert gas, any one of nitrogen gas, argon gas, and helium gas is preferably used, or a combination thereof. In addition, in order to eliminate the influence of contamination, it is preferred that the inert gas be used as high as possible.

再者,溶存氧濃度的測定方法可使用公知的方法,例如可利用溶存氧計DO-31P(DKK-TOA公司製造)、或螢光式溶存氧計LDO-HQ10(哈希(Hach)公司製造)等市售的溶存氧計進行測定。 In addition, a well-known method can be used for the method of measuring the dissolved oxygen concentration, and for example, a dissolved oxygen meter DO-31P (manufactured by DKK-TOA Co., Ltd.) or a fluorescent dissolved oxygen meter LDO-HQ10 (manufactured by Hach Co., Ltd.) can be used. A commercially available dissolved oxygen meter is used for measurement.

另一方面,就提高積層體中的配線間的絕緣可靠性的觀點而言,較佳為處理液中實質上不含銅離子。若含有過剩的銅離子,則當形成遷移抑制層時於該層中含有銅離子,有時抑制銅離子遷移的效果減弱,配線間的絕緣可靠性受損。 On the other hand, from the viewpoint of improving the insulation reliability between the wirings in the laminate, it is preferred that the treatment liquid contains substantially no copper ions. When excessive copper ions are contained, when the migration inhibiting layer is formed, copper ions are contained in the layer, and the effect of suppressing migration of copper ions is sometimes weakened, and insulation reliability between wirings is impaired.

再者,所謂實質上不含銅離子,是指處理液中的銅離子的含量為1 μmol/l以下,更佳為0.1 μmol/l以下。最佳為0 mol/l。 Further, the term "substantially free of copper ions" means that the content of copper ions in the treatment liquid is 1 μmol/l or less, more preferably 0.1 μmol/l or less. The best is 0 mol/l.

另外,就提高積層體中的配線間的絕緣可靠性的觀點而言,較佳為處理液中實質上不含銅或銅合金的蝕刻劑。若處理液中含有蝕刻劑,則當使帶有配線的基板與處理液接觸時,有時銅離子溶出至處理液中。因此,結果於遷移抑制層中含有銅離子,有時抑制銅離子遷移的效果減弱,配線間的絕緣可靠性受損。 Further, from the viewpoint of improving the insulation reliability between the wirings in the laminated body, an etchant which does not substantially contain copper or a copper alloy in the treatment liquid is preferable. When an etchant is contained in the treatment liquid, when the substrate with wiring is brought into contact with the treatment liquid, copper ions may be eluted into the treatment liquid. Therefore, copper ions are contained in the migration inhibiting layer, and the effect of suppressing migration of copper ions is sometimes weakened, and insulation reliability between wirings is impaired.

作為蝕刻劑,例如可列舉:有機酸(例如硫酸、硝酸、鹽酸、乙酸、甲酸、氫氟酸)、氧化劑(例如過氧化氫、濃 硫酸)、螯合劑(例如亞胺基二乙酸、氮基三乙酸、乙二胺四乙酸、乙二胺、乙醇胺、胺基丙醇)、硫醇化合物等。另外,作為蝕刻劑,亦包括如咪唑或咪唑衍生物化合物等般本身具有銅的蝕刻作用者。 Examples of the etchant include organic acids (for example, sulfuric acid, nitric acid, hydrochloric acid, acetic acid, formic acid, hydrofluoric acid), and oxidizing agents (for example, hydrogen peroxide, rich). Sulfuric acid), a chelating agent (for example, iminodiacetic acid, nitrogen triacetic acid, ethylenediaminetetraacetic acid, ethylenediamine, ethanolamine, aminopropanol), a thiol compound, and the like. Further, as the etchant, an etching action of copper itself, such as an imidazole or an imidazole derivative compound, is also included.

再者,所謂實質上不含蝕刻劑,是指處理液中的蝕刻劑的含量相對於處理液總量為0.01質量%以下,就進一步提高配線間的絕緣可靠性的觀點而言,更佳為0.001質量%以下。最佳為0質量%。 In addition, the content of the etchant in the treatment liquid is 0.01% by mass or less based on the total amount of the treatment liquid, and it is more preferable that the insulation reliability between the wirings is further improved. 0.001% by mass or less. The best is 0% by mass.

處理液的pH並無特別規定,但就遷移抑制層的形成性的觀點而言,較佳為5~12。其中,就積層體中的配線間的絕緣可靠性更優異的觀點而言,pH更佳為5~9,進而更佳為6~8。 The pH of the treatment liquid is not particularly limited, but is preferably 5 to 12 from the viewpoint of the formation of the migration inhibiting layer. Among them, the pH is more preferably from 5 to 9, more preferably from 6 to 8, from the viewpoint of more excellent insulation reliability between wirings in the laminate.

若處理液的pH未滿5,則銅離子自銅配線或銅合金配線的溶出得到促進,於遷移抑制層含有大量的銅離子,作為結果,存在抑制銅離子遷移的效果下降的情況。若處理液的pH超過12,則氫氧化銅析出,變得易於氧化溶解,作為結果,存在抑制銅離子遷移的效果下降的情況。 When the pH of the treatment liquid is less than 5, the elution of copper ions from the copper wiring or the copper alloy wiring is promoted, and the migration inhibiting layer contains a large amount of copper ions, and as a result, the effect of suppressing migration of copper ions may be lowered. When the pH of the treatment liquid exceeds 12, the copper hydroxide precipitates and is easily oxidized and dissolved, and as a result, the effect of suppressing migration of copper ions may be lowered.

再者,pH的調整可使用公知的酸(例如鹽酸、硫酸)、或鹼(例如氫氧化鈉)來進行。另外,pH的測定可使用公知的測定方法(例如,pH計(水溶劑的情況))來實施。 Further, the pH can be adjusted by using a known acid (for example, hydrochloric acid, sulfuric acid) or a base (for example, sodium hydroxide). Further, the measurement of pH can be carried out by using a known measurement method (for example, a pH meter (in the case of a water solvent)).

再者,於上述處理液中,亦可含有其他添加劑(例如pH調整劑、界面活性劑、防腐劑、防析出劑等)。 Further, other additives (for example, a pH adjuster, a surfactant, a preservative, an anti-precipitation agent, etc.) may be contained in the above treatment liquid.

[具有遷移抑制層的積層體的製造方法(第1實施形態)] [Method for Producing Laminated Body Having Migration Relief Layer (First Embodiment)]

作為本發明的具有遷移抑制層的積層體的製造方法的較佳實施形態之一,可列舉依次實施層形成步驟、乾燥步驟、及絕緣層形成步驟的製造方法。 As one of preferred embodiments of the method for producing a laminate having a migration inhibiting layer of the present invention, a production method in which a layer forming step, a drying step, and an insulating layer forming step are sequentially performed may be mentioned.

以下,參照圖式,對各步驟中所使用的材料、及步驟的程序進行說明。 Hereinafter, the materials used in the respective steps and the procedures of the steps will be described with reference to the drawings.

[層形成步驟] [layer formation step]

於該步驟中,首先,使具有基板及配置於基板上的銅配線或銅合金配線(以下,亦簡稱為配線)的帶有配線的基板、與上述遷移抑制層形成用處理液接觸(接觸步驟)。其後,利用溶劑(清洗溶劑)清洗上述接觸後的帶有配線的基板,而於銅配線或銅合金配線表面上形成包含唑化合物的遷移抑制層(清洗步驟)。換言之,接觸步驟是如下的步驟:使帶有配線的基板(更具體而言,帶有配線的基板的具有銅配線或銅合金配線之側的表面)與處理液接觸,藉由唑化合物來覆蓋帶有配線的基板的基板表面與配線表面。另外,清洗步驟是利用溶劑清洗帶有配線的基板,而將基板表面上的唑化合物去除的步驟。藉由該步驟,以覆蓋銅配線或銅合金配線的表面的方式形成遷移抑制層,從而抑制銅的遷移。 In this step, first, a wiring-attached substrate having a substrate and a copper wiring or a copper alloy wiring (hereinafter also referred to as a wiring) disposed on the substrate is brought into contact with the processing liquid for forming a migration suppression layer (contact step). ). Thereafter, the wiring-attached substrate after the contact is washed with a solvent (cleaning solvent) to form a migration inhibiting layer containing an azole compound on the surface of the copper wiring or the copper alloy wiring (cleaning step). In other words, the contacting step is a step of bringing the wiring-attached substrate (more specifically, the surface of the wiring-attached substrate having the side of the copper wiring or the copper alloy wiring) into contact with the treatment liquid, and covering with the azole compound. The surface of the substrate with the wiring and the wiring surface. Further, the washing step is a step of removing the azole compound on the surface of the substrate by washing the substrate with the wiring with a solvent. By this step, the migration inhibiting layer is formed so as to cover the surface of the copper wiring or the copper alloy wiring, thereby suppressing migration of copper.

首先,對層形成步驟中所使用的材料(帶有配線的基板等)進行說明,其後對層形成步驟的程序進行說明。 First, the material used in the layer forming step (substrate with wiring, etc.) will be described, and then the procedure of the layer forming step will be described.

(帶有配線的基板) (substrate with wiring)

本步驟中所使用的帶有配線的基板(內層基板)具有基板、及配置於基板上的銅配線或銅合金配線。換言之, 帶有配線的基板是至少具有基板與銅配線或銅合金配線的積層構造,且只要於最外層配置有銅配線或銅合金配線即可。於圖1(a)中,表示帶有配線的基板的一形態,帶有配線的基板10具有基板12、及配置於基板12上的銅配線或銅合金配線14(以下,亦簡稱為配線14)。於圖1(a)中,配線14僅設置於基板的一面,但亦可設置於兩面。即,帶有配線的基板10可為單面基板,亦可為雙面基板。 The wiring-attached substrate (inner substrate) used in this step has a substrate and copper wiring or copper alloy wiring disposed on the substrate. In other words, The substrate with wiring is a laminated structure having at least a substrate and a copper wiring or a copper alloy wiring, and a copper wiring or a copper alloy wiring may be disposed on the outermost layer. 1(a) shows an embodiment of a substrate with wiring, and the substrate 10 with wiring has a substrate 12 and a copper wiring or a copper alloy wiring 14 disposed on the substrate 12 (hereinafter also referred to simply as wiring 14). ). In FIG. 1(a), the wiring 14 is provided only on one side of the substrate, but may be provided on both sides. That is, the substrate 10 with wiring may be a single-sided substrate or a double-sided substrate.

基板只要是可支撐配線者,則並無特別限制,但通常為絕緣基板。作為絕緣基板,例如可使用有機基板、陶瓷基板、矽基板、玻璃基板等。 The substrate is not particularly limited as long as it can support the wiring, but is usually an insulating substrate. As the insulating substrate, for example, an organic substrate, a ceramic substrate, a tantalum substrate, a glass substrate, or the like can be used.

作為有機基板的材料,可列舉樹脂,較佳為使用例如熱硬化性樹脂、熱塑性樹脂、或將該些混合而成的樹脂。作為熱硬化性樹脂,可列舉:酚樹脂、脲樹脂、三聚氰胺樹脂、醇酸樹脂、丙烯酸樹脂、不飽和聚酯樹脂、鄰苯二甲酸二烯丙酯樹脂、環氧樹脂、矽酮樹脂、呋喃樹脂、酮樹脂、二甲苯樹脂、苯并環丁烯樹脂等。作為熱塑性樹脂,可列舉:聚醯亞胺樹脂、聚苯醚樹脂、聚苯硫醚樹脂、芳族聚醯胺樹脂、液晶聚合物等。 The material of the organic substrate is exemplified by a resin, and for example, a thermosetting resin, a thermoplastic resin, or a resin obtained by mixing these is preferably used. Examples of the thermosetting resin include a phenol resin, a urea resin, a melamine resin, an alkyd resin, an acrylic resin, an unsaturated polyester resin, a diallyl phthalate resin, an epoxy resin, an anthrone resin, and furan. Resin, ketone resin, xylene resin, benzocyclobutene resin, and the like. Examples of the thermoplastic resin include a polyimide resin, a polyphenylene ether resin, a polyphenylene sulfide resin, an aromatic polyamide resin, and a liquid crystal polymer.

再者,作為有機基板的材料,亦可使用玻璃織布、玻璃不織布、芳族聚醯胺織布、芳族聚醯胺不織布、芳香族聚醯胺織布、或使上述樹脂含浸至該些中而成的材料等。 Further, as a material of the organic substrate, a glass woven fabric, a glass non-woven fabric, an aromatic polyamide woven fabric, an aromatic polyamide woven fabric, an aromatic polyamide woven fabric, or the impregnation of the above resin may be used. Made of materials, etc.

配線包含銅或銅合金。當配線包含銅合金時,作為所含有的銅以外的金屬,例如可列舉銀、錫、鈀、金、鎳、鉻等。 The wiring contains copper or a copper alloy. When the wiring includes a copper alloy, examples of the metal other than copper contained include silver, tin, palladium, gold, nickel, chromium, and the like.

於基板上形成配線的方法並無特別限制,可採用公知的方法。代表例可列舉利用蝕刻處理的減成法、或利用電解鍍敷的半加成法。 The method of forming the wiring on the substrate is not particularly limited, and a known method can be employed. Representative examples include a subtractive method using an etching treatment or a semi-additive method using electrolytic plating.

配線的寬度並無特別限制,但就將所形成的積層體應用於印刷配線基板時的高積體化的觀點而言,較佳為1 μm~1000 μm,更佳為3 μm~25 μm。 The width of the wiring is not particularly limited, but is preferably 1 μm to 1000 μm, and more preferably 3 μm to 25 μm from the viewpoint of high integration of the formed laminate when printed on a printed wiring board.

配線間的間隔並無特別限制,但就將所形成的積層體應用於印刷配線基板時的高積體化的觀點而言,較佳為1 μm~1000 μm,更佳為3 μm~25 μm。 The interval between the wirings is not particularly limited, but it is preferably 1 μm to 1000 μm, more preferably 3 μm to 25 μm from the viewpoint of high integration of the laminated body formed on the printed wiring board. .

另外,配線的圖案形狀並無特別限制,可為任意的圖案。例如可列舉直線狀、曲線狀、矩形狀、圓狀等。 Further, the pattern shape of the wiring is not particularly limited, and may be any pattern. For example, a linear shape, a curved shape, a rectangular shape, a circular shape, etc. are mentioned.

配線的厚度並無特別限制,但就將所形成的積層體應用於印刷配線基板時的高積體化的觀點而言,較佳為1 μm~1000 μm,更佳為3 μm~25 μm。 The thickness of the wiring is not particularly limited, but is preferably 1 μm to 1000 μm, and more preferably 3 μm to 25 μm from the viewpoint of high integration of the formed laminate when printed on a printed wiring board.

配線的表面粗糙度Rz並無特別限制,但就與後述的絕緣層的密接性的觀點而言,較佳為0.001 μm~15 μm,更佳為0.3 μm~3 μm。 The surface roughness Rz of the wiring is not particularly limited, but is preferably 0.001 μm to 15 μm, and more preferably 0.3 μm to 3 μm from the viewpoint of adhesion to an insulating layer to be described later.

作為調整配線的表面粗糙度Rz的方法,可使用公知的方法,例如可列舉化學粗化處理、拋光研磨處理等。 As a method of adjusting the surface roughness Rz of the wiring, a known method can be used, and examples thereof include a chemical roughening treatment, a buffing treatment, and the like.

再者,Rz是根據JIS B 0601(1994年)來測定。 Further, Rz is measured in accordance with JIS B 0601 (1994).

本步驟中所使用的帶有配線的基板只要於最外層具有配線即可,亦可在基板與配線之間依次具備其他金屬配線(配線圖案)及層間絕緣層。再者,亦可在基板與配線之間,以其他金屬配線及層間絕緣層的順序交替地含有2層 以上的各個層。即,帶有配線的基板亦可為所謂的多層配線基板、增層基板(build up substrate)。 The wiring-attached substrate used in this step may have wiring on the outermost layer, and another metal wiring (wiring pattern) and an interlayer insulating layer may be sequentially provided between the substrate and the wiring. Furthermore, it is also possible to alternately include two layers in the order of other metal wirings and interlayer insulating layers between the substrate and the wiring. Each of the above layers. That is, the substrate with wiring may be a so-called multilayer wiring substrate or a build up substrate.

作為層間絕緣層,可使用公知的絕緣材料,例如可列舉:酚樹脂、萘樹脂、脲樹脂、胺基樹脂、醇酸樹脂、環氧樹脂、丙烯酸酯樹脂等。 As the interlayer insulating layer, a known insulating material can be used, and examples thereof include a phenol resin, a naphthalene resin, a urea resin, an amine resin, an alkyd resin, an epoxy resin, and an acrylate resin.

另外,帶有配線的基板亦可為所謂的剛性基板、柔性基板、剛柔結合基板。 Further, the substrate with wiring may be a so-called rigid substrate, a flexible substrate, or a rigid-flex substrate.

另外,亦可於基板中形成通孔。當於基板的兩面設置配線時,例如可藉由向通孔內填充金屬(例如銅或銅合金),而使兩面的配線導通。 In addition, a through hole may be formed in the substrate. When wiring is provided on both surfaces of the substrate, for example, a metal (for example, copper or a copper alloy) may be filled in the via hole to electrically connect the wiring on both sides.

(溶劑(清洗溶劑)) (solvent (cleaning solvent))

清洗帶有配線的基板的清洗步驟中所使用的溶劑(清洗溶劑)只要可去除基板上的配線間所堆積的多餘的唑化合物等,並無特別限制。其中,較佳為溶解唑化合物的溶劑。藉由使用該溶劑,可更有效率地去除基板上所堆積的多餘的唑化合物、或配線上的多餘的唑化合物等。 The solvent (cleaning solvent) used in the cleaning step of cleaning the substrate with wiring is not particularly limited as long as the excess azole compound or the like deposited between the wirings on the substrate can be removed. Among them, a solvent which dissolves the azole compound is preferred. By using this solvent, excess azole compound deposited on the substrate or excess azole compound on the wiring can be removed more efficiently.

作為溶劑,例如可列舉:水、醇系溶劑(例如甲醇、乙醇、丙醇)、酮系溶劑(例如丙酮、甲基乙基酮、環己酮)、醯胺系溶劑(例如甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮)、腈系溶劑(例如乙腈、丙腈)、酯系溶劑(例如乙酸甲酯、乙酸乙酯)、碳酸酯系溶劑(例如碳酸二甲酯、碳酸二乙酯)、醚系溶劑、鹵素系溶劑等。可將該些溶劑的2種以上混合使用。 Examples of the solvent include water, an alcohol solvent (for example, methanol, ethanol, or propanol), a ketone solvent (for example, acetone, methyl ethyl ketone, and cyclohexanone), and a guanamine solvent (for example, formamide). Dimethylacetamide, N-methylpyrrolidone), nitrile solvent (eg acetonitrile, propionitrile), ester solvent (eg methyl acetate, ethyl acetate), carbonate solvent (eg dimethyl carbonate) Ester, diethyl carbonate), ether solvent, halogen solvent, and the like. Two or more kinds of these solvents may be used in combination.

其中,就對於微細配線間的液體滲透性的觀點而言, 較佳為包含選自由水、醇系溶劑、及甲基乙基酮所組成的組群中的至少1種的溶劑,更佳為水、或醇系溶劑與水的混合液。 Among them, from the viewpoint of the liquid permeability between the fine wiring lines, It is preferably a solvent containing at least one selected from the group consisting of water, an alcohol solvent, and methyl ethyl ketone, and more preferably water or a mixture of an alcohol solvent and water.

所使用的溶劑的沸點(25℃,1個大氣壓)並無特別限制,但就安全性的的觀點而言,較佳為75℃~100℃,更佳為80℃~100℃。 The boiling point of the solvent to be used (25 ° C, 1 atm) is not particularly limited, but from the viewpoint of safety, it is preferably from 75 ° C to 100 ° C, more preferably from 80 ° C to 100 ° C.

所使用的溶劑的表面張力(25℃)並無特別限制,但就配線間的清洗性更優異、配線間的絕緣可靠性進一步提昇的觀點而言,較佳為10 mN/m~80 mN/m,更佳為15 mN/m~60 mN/m。 The surface tension (25 ° C) of the solvent to be used is not particularly limited, but is preferably 10 mN/m to 80 mN from the viewpoint of further improving the cleaning property between wirings and further improving the insulation reliability between wirings. m, more preferably 15 mN/m to 60 mN/m.

(層形成步驟的程序) (procedure of layer forming step)

將層形成步驟分成接觸步驟及清洗步驟這2個步驟進行說明。 The layer forming step is divided into two steps of a contact step and a washing step.

(接觸步驟) (contact step)

首先,使具有基板及配置於基板上的銅配線或銅合金配線的帶有配線的基板、與上述遷移抑制層形成用處理液接觸。藉由使上述帶有配線的基板與上述處理液接觸,如圖1(b)所示,於帶有配線的基板10上形成包含唑化合物的層16。換言之,該接觸步驟是使用上述處理液,藉由包含唑化合物的層16來覆蓋帶有配線的基板10的基板12表面及配線14表面的步驟。該層16形成於基板12上、及配線14上。 First, a wiring-attached substrate having a substrate and a copper wiring or a copper alloy wiring disposed on the substrate is brought into contact with the processing liquid for forming a migration suppression layer. By bringing the wiring-attached substrate into contact with the processing liquid, as shown in FIG. 1(b), a layer 16 containing an azole compound is formed on the wiring-attached substrate 10. In other words, the contacting step is a step of covering the surface of the substrate 12 with the wiring 10 and the surface of the wiring 14 by the layer 16 containing the azole compound using the above-described processing liquid. This layer 16 is formed on the substrate 12 and on the wiring 14.

於包含唑化合物的層16中含有唑化合物。其含量等與後述的遷移抑制層中的含量大致同義。另外,其附著量並 無特別限制,較佳為如下的附著量:經過後述的清洗步驟後,可獲得所期望的附著量的遷移抑制層。 The azole compound is contained in the layer 16 containing the azole compound. The content and the like are substantially the same as those in the migration inhibiting layer described later. In addition, the amount of adhesion There is no particular limitation, and the amount of adhesion is preferably such that a migration inhibiting layer having a desired adhesion amount can be obtained after the washing step described later.

帶有配線的基板與上述處理液的接觸方法並無特別限制,可採用公知的方法。例如可列舉浸泡浸漬、噴淋噴霧、噴塗、旋塗等,就處理的簡便性、處理時間的調整的容易性而言,較佳為浸泡浸漬、噴淋噴霧、噴塗。 The method of contacting the substrate with wiring and the above treatment liquid is not particularly limited, and a known method can be employed. For example, immersion immersion, spray spray, spray coating, spin coating, and the like are exemplified, and the ease of treatment and the ease of adjustment of the treatment time are preferably soaking, spraying, and spraying.

另外,作為接觸時的處理液的液溫,就控制遷移抑制層的附著量的觀點而言,較佳為5℃~60℃的範圍,更佳為15℃~50℃的範圍,進而更佳為20℃~40℃的範圍。 In addition, the liquid temperature of the treatment liquid at the time of contact is preferably in the range of 5 ° C to 60 ° C, more preferably in the range of 15 ° C to 50 ° C, and more preferably from the viewpoint of controlling the amount of adhesion of the migration inhibiting layer. It is in the range of 20 ° C to 40 ° C.

另外,作為接觸時間,就生產性及控制遷移抑制層的附著量的觀點而言,較佳為10秒~30分鐘的範圍,更佳為15秒~10分鐘的範圍,進而更佳為30秒~5分鐘的範圍。 In addition, the contact time is preferably in the range of 10 seconds to 30 minutes, more preferably in the range of 15 seconds to 10 minutes, and more preferably 30 seconds, from the viewpoint of productivity and control of the amount of adhesion of the migration inhibiting layer. ~5 minutes range.

(清洗步驟) (cleaning step)

其次,利用溶劑清洗帶有配線的基板,而於銅配線或銅合金配線表面上形成包含唑化合物的遷移抑制層。藉由進行本步驟,可將基板表面上的唑化合物清洗去除。尤其,若使用溶解唑化合物的溶劑作為溶劑,則銅配線或銅合金配線表面上的唑化合物以外的唑化合物(特別特別是基板表面上的唑化合物)被更容易地溶解去除。具體而言,利用上述清洗溶劑清洗圖1(b)中所獲得的設置有包含唑化合物的層16的帶有配線的基板10,藉此如圖1(c)所示,配線14間的包含唑化合物的層16被去除,並且配線14上的多餘的唑化合物被去除,而於配線14上形成包含唑化 合物的遷移抑制層18。 Next, the wiring-attached substrate is washed with a solvent, and a migration inhibiting layer containing an azole compound is formed on the surface of the copper wiring or the copper alloy wiring. By carrying out this step, the azole compound on the surface of the substrate can be removed by washing. In particular, when a solvent in which the azole compound is dissolved is used as a solvent, an azole compound other than the azole compound on the surface of the copper wiring or the copper alloy wiring (particularly, an azole compound on the surface of the substrate) is more easily dissolved and removed. Specifically, the wiring-attached substrate 10 provided with the layer 16 containing the azole compound obtained in Fig. 1(b) is washed by the above-mentioned cleaning solvent, whereby the inclusion between the wirings 14 is as shown in Fig. 1(c). The layer 16 of the azole compound is removed, and the excess azole compound on the wiring 14 is removed, and the inclusion of the azole in the wiring 14 is formed. The migration inhibiting layer 18 of the compound.

清洗方法並無特別限制,可採用公知的方法。例如可列舉:將清洗溶劑塗佈於帶有配線的基板上的方法、使帶有配線的基板浸漬於清洗溶劑中的方法等。 The washing method is not particularly limited, and a known method can be employed. For example, a method of applying a cleaning solvent onto a substrate having a wiring, a method of immersing a substrate with wiring in a cleaning solvent, and the like can be mentioned.

另外,作為清洗溶劑的液溫,就控制遷移抑制層的附著量的觀點而言,較佳為5℃~60℃的範圍,更佳為15℃~30℃的範圍。 In addition, the liquid temperature of the cleaning solvent is preferably in the range of 5 ° C to 60 ° C, and more preferably in the range of 15 ° C to 30 ° C from the viewpoint of controlling the amount of adhesion of the migration inhibiting layer.

另外,作為帶有配線的基板與清洗溶劑的接觸時間,就生產性、及控制遷移抑制層的附著量的觀點而言,較佳為10秒~10分鐘的範圍,更佳為15秒~5分鐘的範圍。 In addition, the contact time between the substrate with wiring and the cleaning solvent is preferably in the range of 10 seconds to 10 minutes, more preferably 15 seconds to 5, from the viewpoint of productivity and control of the amount of adhesion of the migration inhibiting layer. The range of minutes.

(遷移抑制層(銅離子擴散抑制層)) (migration suppression layer (copper ion diffusion suppression layer))

藉由經過上述步驟,如圖1(c)所示,可於銅配線或銅合金配線14表面上形成包含唑化合物的遷移抑制層18。即,遷移抑制層18覆蓋銅配線或銅合金配線14表面。 By the above steps, as shown in FIG. 1(c), the migration inhibiting layer 18 containing the azole compound can be formed on the surface of the copper wiring or the copper alloy wiring 14. That is, the migration suppressing layer 18 covers the surface of the copper wiring or the copper alloy wiring 14.

再者,較佳為如該圖1(c)所示,配線14間的包含唑化合物的層實質上已被去除。即,較佳為實質上僅於銅配線或銅合金配線14表面上形成有遷移抑制層18。 Further, as shown in FIG. 1(c), the layer containing the azole compound between the wires 14 is substantially removed. That is, it is preferable that the migration inhibiting layer 18 is formed substantially only on the surface of the copper wiring or the copper alloy wiring 14.

於本發明中,即便於實施上述溶劑的清洗後,亦可獲得能夠抑制銅離子的遷移的足夠的附著量的遷移抑制層。 In the present invention, even after the cleaning of the solvent described above, a migration inhibiting layer having a sufficient adhesion amount capable of suppressing migration of copper ions can be obtained.

就可進一步抑制銅離子的遷移的觀點而言,遷移抑制層中的唑化合物的含量較佳為0.1質量%~100質量%,更佳為20質量%~100質量%,進而更佳為50質量%~90質量%。尤其,較佳為遷移抑制層實質上由唑化合物構成。若唑化合物的含量過少,則銅離子的遷移抑制效果降低。 The content of the azole compound in the migration inhibiting layer is preferably from 0.1% by mass to 100% by mass, more preferably from 20% by mass to 100% by mass, even more preferably 50%, from the viewpoint of further suppressing migration of copper ions. %~90% by mass. In particular, it is preferred that the migration inhibiting layer be substantially composed of an azole compound. When the content of the azole compound is too small, the effect of suppressing migration of copper ions is lowered.

較佳為於遷移抑制層中,實質上不含銅離子或金屬銅。若於遷移抑制層中含有規定量以上的銅離子或金屬銅,則存在本發明的效果欠佳的情況。 Preferably, the migration inhibiting layer contains substantially no copper ions or metallic copper. When a predetermined amount or more of copper ions or metallic copper is contained in the migration inhibiting layer, the effect of the present invention may be unsatisfactory.

就可進一步抑制銅離子的遷移的觀點而言,相對於銅配線或銅合金配線的總表面積,銅配線或銅合金配線表面上的唑化合物的附著量較佳為5×10-9 g/mm2~1×10-6 g/mm2,更佳為5×10-9 g/mm2~2×10-7 g/mm2,進而更佳為5×10-9 g/mm2~6×10-8 g/mm2From the viewpoint of further suppressing the migration of copper ions, the adhesion amount of the azole compound on the surface of the copper wiring or the copper alloy wiring is preferably 5 × 10 -9 g / mm with respect to the total surface area of the copper wiring or the copper alloy wiring. 2 to 1×10 -6 g/mm 2 , more preferably 5×10 -9 g/mm 2 to 2×10 -7 g/mm 2 , and even more preferably 5×10 -9 g/mm 2 to 6 ×10 -8 g/mm 2 .

再者,附著量可藉由公知的方法(例如吸光度法)來測定。具體而言,於吸光度法中,首先,利用水清洗存在於配線間的遷移抑制層(利用水的萃取法)。其後,利用有機酸(例如硫酸)萃取銅配線或銅合金配線上的遷移抑制層,測定吸光度,並根據液量與塗佈面積而算出附著量。 Further, the amount of adhesion can be measured by a known method (for example, an absorbance method). Specifically, in the absorbance method, first, a migration inhibiting layer (extraction method using water) existing between wirings is washed with water. Thereafter, the migration inhibiting layer on the copper wiring or the copper alloy wiring is extracted with an organic acid (for example, sulfuric acid), the absorbance is measured, and the adhesion amount is calculated from the liquid amount and the coating area.

再者,如上所述,較佳為於配線間包含唑化合物的層實質上已被去除,但亦可於無損本發明的效果的範圍內,使一部分包含唑化合物的層殘存。 Further, as described above, it is preferable that the layer containing the azole compound between the wirings is substantially removed, but a part of the layer containing the azole compound may remain in the range which does not impair the effect of the present invention.

[乾燥步驟] [Drying step]

於該步驟中,對設置有遷移抑制層的帶有配線的基板進行加熱乾燥。若水分殘存於帶有配線的基板上,則有可能會促進銅離子的遷移,因此較佳為藉由設置該步驟來去除水分。 In this step, the wiring-attached substrate provided with the migration inhibiting layer is dried by heating. If moisture remains on the substrate with the wiring, the migration of copper ions may be promoted. Therefore, it is preferable to remove the moisture by providing this step.

作為加熱乾燥條件,就抑制銅配線或銅合金配線的氧化的觀點而言,較佳為於70℃~120℃(較佳為80℃~110℃)下實施15秒~10分鐘(較佳為30秒~5分鐘)。 若乾燥溫度過低、或乾燥時間過短,則存在水分的去除並不充分的情況,若乾燥溫度過高、或乾燥時間過長,則有可能形成氧化銅。 From the viewpoint of suppressing oxidation of the copper wiring or the copper alloy wiring as the heating and drying conditions, it is preferably carried out at 70 ° C to 120 ° C (preferably 80 ° C to 110 ° C) for 15 seconds to 10 minutes (preferably 30 seconds to 5 minutes). If the drying temperature is too low or the drying time is too short, the removal of moisture may not be sufficient. If the drying temperature is too high or the drying time is too long, copper oxide may be formed.

用於乾燥的裝置並無特別限定,可使用恆溫層、加熱器等公知的加熱裝置。 The apparatus for drying is not particularly limited, and a known heating device such as a constant temperature layer or a heater can be used.

再者,本步驟是任意的步驟,於層形成步驟中所使用的溶劑為揮發性優異的溶劑的情況等時,亦可不實施本步驟。 In addition, this step is an arbitrary step, and when the solvent used in the layer formation step is a solvent having excellent volatility, the step may not be carried out.

[絕緣層形成步驟] [Insulation layer forming step]

於該步驟中,於設置有遷移抑制層的帶有配線的基板上形成絕緣層。如圖1(d)所示,絕緣層20是以與表面設置有遷移抑制層18的配線14接觸的方式,設置於帶有配線的基板10上。藉由設置絕緣層20,而進一步確保配線14間的絕緣可靠性。另外,因基板12與絕緣層20可直接接觸,故絕緣層20的密接性優異。 In this step, an insulating layer is formed on the wiring-attached substrate provided with the migration inhibiting layer. As shown in FIG. 1(d), the insulating layer 20 is provided on the substrate 10 with wiring so as to be in contact with the wiring 14 on the surface where the migration suppressing layer 18 is provided. By providing the insulating layer 20, the insulation reliability between the wirings 14 is further ensured. Further, since the substrate 12 and the insulating layer 20 can be in direct contact with each other, the insulating layer 20 is excellent in adhesion.

首先,對所使用的絕緣層進行說明,其次對絕緣層的形成方法進行說明。 First, the insulating layer to be used will be described, and next, a method of forming the insulating layer will be described.

作為絕緣層,可使用公知的絕緣性的材料。例如可使用作為所謂的層間絕緣層所使用的材料,具體而言,可列舉:環氧樹脂、芳族聚醯胺樹脂、結晶性聚烯烴樹脂、非晶性聚烯烴樹脂、含有氟的樹脂(聚四氟乙烯、全氟化聚醯亞胺、全氟化非晶樹脂等)、聚醯亞胺樹脂、聚醚碸樹脂、聚苯硫醚樹脂、聚醚醚酮樹脂、丙烯酸酯樹脂等。作為層間絕緣層,例如可列舉Ajinomoto Fine-Techno(股份)製 造的ABF GX-13等。 As the insulating layer, a known insulating material can be used. For example, a material used as a so-called interlayer insulating layer can be used, and specific examples thereof include an epoxy resin, an aromatic polyamide resin, a crystalline polyolefin resin, an amorphous polyolefin resin, and a fluorine-containing resin ( Polytetrafluoroethylene, perfluoropolyimine, perfluorinated amorphous resin, etc.), polyimide resin, polyether oxime resin, polyphenylene sulfide resin, polyether ether ketone resin, acrylate resin, and the like. As the interlayer insulating layer, for example, Ajinomoto Fine-Techno (stock) system can be cited. Made of ABF GX-13 and so on.

另外,作為絕緣層,亦可使用所謂的阻焊劑層。阻焊劑可使用市售品,具體而言,例如可列舉太陽油墨製造(股份)製造的PFR800、PSR4000(商品名),日立化成工業(股份)製造的SR7200G等。 Further, as the insulating layer, a so-called solder resist layer can also be used. A commercially available product can be used as the solder resist. Specific examples thereof include PFR800 and PSR4000 (trade name) manufactured by Sun Ink Manufacturing Co., Ltd., and SR7200G manufactured by Hitachi Chemical Co., Ltd.

於帶有配線的基板上形成絕緣層的方法並無特別限制,可採用公知的方法。例如可列舉:將絕緣層的膜直接層壓於帶有配線的基板上的方法、或將包含構成絕緣層的成分的絕緣層形成用組成物塗佈於帶有配線的基板上的方法、或使帶有配線的基板浸漬於該絕緣層形成用組成物中的方法等。 The method of forming the insulating layer on the substrate with wiring is not particularly limited, and a known method can be employed. For example, a method of directly laminating a film of an insulating layer on a substrate having a wiring, or a method of applying a composition for forming an insulating layer containing a component constituting the insulating layer to a substrate having a wiring, or A method of immersing a wiring-attached substrate in the composition for forming an insulating layer.

再者,於上述絕緣層形成用組成物中,視需要亦可含有溶劑。當使用含有溶劑的絕緣層形成用組成物時,於將該組成物配置在基板上後,視需要可為了去除溶劑而實施加熱處理。 Further, the insulating layer forming composition may contain a solvent as needed. When a composition for forming an insulating layer containing a solvent is used, after the composition is placed on the substrate, heat treatment may be performed to remove the solvent as necessary.

另外,於將絕緣層設置在帶有配線的基板上後,視需要可對絕緣層賦予能量(例如實施曝光或加熱處理)。 Further, after the insulating layer is provided on the wiring-attached substrate, energy may be applied to the insulating layer (for example, exposure or heat treatment).

所形成的絕緣層的膜厚並無特別限制,就配線間的絕緣可靠性的觀點而言,較佳為5 μm~50 μm,更佳為15 μm~40 μm。 The film thickness of the insulating layer to be formed is not particularly limited, and is preferably 5 μm to 50 μm, and more preferably 15 μm to 40 μm from the viewpoint of insulation reliability between wirings.

於圖1(d)中,絕緣層是以一層來記載,但亦可為多層構造。 In Fig. 1(d), the insulating layer is described as one layer, but may have a multilayer structure.

(具有遷移抑制層的積層體) (Laminar body with migration suppression layer)

藉由經過上述步驟,如圖1(d)所示,可獲得如下的 積層體30(具有遷移抑制層的積層體的第1實施形態):具備基板12、配置於基板12上的配線14、及配置於配線14上的絕緣層20,且遷移抑制層18介於配線14與絕緣層20之間。所獲得的積層體30的配線14間的絕緣可靠性優異,並且絕緣層20與帶有配線的基板10的密接性亦優異。 By the above steps, as shown in FIG. 1(d), the following can be obtained. The laminated body 30 (the first embodiment of the laminated body having the migration inhibiting layer) includes the substrate 12, the wiring 14 disposed on the substrate 12, and the insulating layer 20 disposed on the wiring 14, and the migration suppressing layer 18 is interposed 14 is between the insulating layer 20. The insulation reliability between the wirings 14 of the laminated body 30 obtained is excellent, and the adhesion between the insulating layer 20 and the wiring-attached substrate 10 is also excellent.

再者,如圖1(d)所示,於上述中列舉了一層配線構造的積層體作為例子,當然並不限定於此。例如,藉由使用如下的帶有多層配線的基板,可製造多層配線構造的積層體,上述帶有多層配線的基板在基板與金屬配線之間,使其他金屬配線(金屬配線層)及層間絕緣層以該順序交替地積層。 Further, as shown in FIG. 1(d), the laminated body having one wiring structure is exemplified above, and of course, it is not limited thereto. For example, a laminate having a multilayer wiring structure can be manufactured by using a substrate having a multilayer wiring in which another metal wiring (metal wiring layer) and interlayer insulation are interposed between the substrate and the metal wiring. The layers are alternately laminated in this order.

藉由本發明的製造方法所獲得的積層體可針對各種用途及構造來使用,例如可列舉印刷配線基板、母板用基板或半導體封裝用基板、模塑互連器件(Molded Interconnect Device,MID)基板等,且可針對剛性基板、柔性基板、剛柔結合基板、成型電路基板等來使用。 The laminate obtained by the production method of the present invention can be used for various applications and structures, and examples thereof include a printed wiring board, a mother board substrate, or a semiconductor package substrate, and a molded interconnect device (MID) substrate. For example, it can be used for a rigid substrate, a flexible substrate, a rigid-flex substrate, a molded circuit substrate, or the like.

另外,亦可將所獲得的積層體中的絕緣層的一部分去除,並安裝半導體晶片來用作印刷電路板。 Further, a part of the insulating layer in the obtained laminated body may be removed, and a semiconductor wafer may be mounted for use as a printed circuit board.

例如,當使用阻焊劑作為絕緣層時,將規定的圖案狀的遮罩配置於絕緣層上,賦予能量來使其硬化,並將未賦予能量的區域的絕緣層去除來使配線露出。繼而,利用公知的方法清洗(例如,使用硫酸或界面活性劑清洗)所露出的配線的表面後,將半導體晶片安裝於配線表面上。 For example, when a solder resist is used as the insulating layer, a predetermined pattern-shaped mask is placed on the insulating layer, energy is applied to be cured, and the insulating layer in the region where no energy is applied is removed to expose the wiring. Then, the surface of the exposed wiring is cleaned (for example, by using sulfuric acid or a surfactant) by a known method, and then the semiconductor wafer is mounted on the wiring surface.

當使用公知的層間絕緣層作為絕緣層時,可藉由鑽孔 加工或雷射加工來去除絕緣層。 When a well-known interlayer insulating layer is used as the insulating layer, it can be drilled Processing or laser processing to remove the insulation.

另外,亦可於所獲得的積層體的絕緣層上進一步設置金屬配線(配線圖案)。形成金屬配線的方法並無特別限制,可使用公知的方法(鍍敷處理、濺鍍處理等)。 Further, a metal wiring (wiring pattern) may be further provided on the insulating layer of the obtained laminated body. The method of forming the metal wiring is not particularly limited, and a known method (plating treatment, sputtering treatment, or the like) can be used.

於本發明中,可將於所獲得的積層體的絕緣層上進一步設置有金屬配線(配線圖案)的基板用作新的帶有配線的基板(內層基板),並重新積層若干層的絕緣層及金屬配線。 In the present invention, a substrate in which a metal wiring (wiring pattern) is further provided on the insulating layer of the obtained laminated body can be used as a new wiring-attached substrate (inner substrate), and a plurality of layers of insulation are newly laminated. Layer and metal wiring.

[具有遷移抑制層的積層體的製造方法(第2實施形態)] [Method for Producing Laminated Body Having Migration Suppression Layer (Second Embodiment)]

作為本發明的具有遷移抑制層的積層體的製造方法的其他較佳的實施形態,可列舉依次實施如下的層形成步驟、及乾燥步驟的製造方法,上述層形成步驟使用以下的具有露出配線的具有露出配線的積層體(以下,亦簡稱為含有露出配線的積層體)來代替上述帶有配線的基板,該積層體具有基板、配置於基板上的銅配線或銅合金配線、及配置於基板上且以使銅配線或銅合金配線的一部分露出的方式覆蓋銅配線及銅合金配線的絕緣層。 Another preferred embodiment of the method for producing a laminate having a migration inhibiting layer of the present invention includes a layer forming step and a drying step in which the layer forming step uses the following exposed wiring. A laminate having exposed wiring (hereinafter also referred to simply as a laminate including exposed wiring) is provided in place of the wiring-attached substrate having a substrate, a copper wiring or a copper alloy wiring disposed on the substrate, and a substrate disposed on the substrate The insulating layer of the copper wiring and the copper alloy wiring is covered so that a part of the copper wiring or the copper alloy wiring is exposed.

以下,參照圖式,對各步驟中所使用的材料、及步驟的程序進行說明。 Hereinafter, the materials used in the respective steps and the procedures of the steps will be described with reference to the drawings.

[層形成步驟] [layer formation step]

於該步驟中,首先,使含有露出配線的積層體與上述遷移抑制層形成用處理液接觸(接觸步驟)。其後,利用溶劑(清洗溶劑)清洗含有露出配線的積層體,而於所露出 的銅配線或銅合金配線表面上形成包含唑化合物的遷移抑制層(清洗步驟)。 In this step, first, the layered body including the exposed wiring is brought into contact with the treatment liquid for forming the migration suppression layer (contact step). Thereafter, the layered body including the exposed wiring is cleaned by a solvent (cleaning solvent) to be exposed A migration inhibiting layer containing an azole compound is formed on the surface of the copper wiring or the copper alloy wiring (cleaning step).

藉由該步驟,以覆蓋所露出的銅配線或銅合金配線的表面的方式形成遷移層,從而抑制銅的遷移。 By this step, the migration layer is formed so as to cover the surface of the exposed copper wiring or the copper alloy wiring, thereby suppressing the migration of copper.

首先,對層形成步驟中所使用的材料(含有露出配線的積層體)進行說明,其後對層形成步驟的程序進行說明。 First, the material used in the layer forming step (the layered body including the exposed wiring) will be described, and then the procedure of the layer forming step will be described.

(含有露出配線的積層體) (Laminated body with exposed wiring)

本步驟中所使用的含有露出配線的積層體具有基板、配置於基板上的銅配線或銅合金配線(以下,亦簡稱為配線)、及配置於基板上且以使銅配線或銅合金配線的一部分露出的方式覆蓋銅配線及銅合金配線的絕緣層。圖2中,含有露出配線的積層體40具備基板12、銅配線或銅合金配線14(以下,亦簡稱為配線14)、及絕緣層20。配線14包含所露出的銅配線或銅合金配線(以下,亦簡稱為配線14a)、及由絕緣層20包覆的銅配線或銅合金配線(以下,亦簡稱為配線14b)。 The laminate including the exposed wiring used in this step includes a substrate, a copper wiring or a copper alloy wiring (hereinafter also referred to simply as a wiring) disposed on the substrate, and a copper wiring or a copper alloy wiring disposed on the substrate. A portion of the exposed layer covers the insulation of the copper wiring and the copper alloy wiring. In FIG. 2, the laminated body 40 including the exposed wiring includes a substrate 12, a copper wiring or a copper alloy wiring 14 (hereinafter also referred to simply as the wiring 14), and an insulating layer 20. The wiring 14 includes exposed copper wiring or copper alloy wiring (hereinafter also referred to simply as wiring 14a), and copper wiring or copper alloy wiring (hereinafter also simply referred to as wiring 14b) covered with the insulating layer 20.

再者,於圖2中,所露出的配線14a雖然支撐於基板12上,但其一部分亦可延伸至基板12外。 Further, in FIG. 2, the exposed wiring 14a is supported on the substrate 12, but a part thereof may extend outside the substrate 12.

本步驟中所使用的含有露出配線的積層體中的基板的形態(種類等)與上述第1實施形態中所使用的帶有配線的基板(內層基板)中的基板的形態相同。 The form (type, etc.) of the substrate in the laminated body including the exposed wiring used in this step is the same as that of the substrate in the wiring-attached substrate (inner layer substrate) used in the first embodiment.

其中,作為基板(特別是絕緣基板),較佳為使用例如有機基板、薄的玻璃環氧基板等。藉由使用有機基板等基板,可獲得所謂的柔性印刷配線基板。另外,藉由使用包 含玻璃環氧基板的剛性的基板,可獲得所謂的剛性印刷配線基板。 Among them, as the substrate (particularly, an insulating substrate), for example, an organic substrate, a thin glass epoxy substrate, or the like is preferably used. A so-called flexible printed wiring board can be obtained by using a substrate such as an organic substrate. In addition, by using the package A rigid substrate including a glass epoxy substrate can be obtained as a so-called rigid printed wiring board.

作為有機基板的材料,可列舉樹脂,例如可列舉聚醯亞胺樹脂、聚酯樹脂、液晶聚合物等。 The material of the organic substrate may, for example, be a resin, and examples thereof include a polyimide resin, a polyester resin, and a liquid crystal polymer.

本步驟中所使用的含有露出配線的積層體中的銅配線或銅合金配線的形態(材料的種類、寬度、間隔、厚度等)與上述第1實施形態中所使用的帶有配線的基板(內層基板)的銅配線或銅合金配線的形態相同。 The form of the copper wiring or the copper alloy wiring in the laminated body including the exposed wiring used in this step (the type, width, interval, thickness, and the like of the material) and the wiring-attached substrate used in the first embodiment ( The copper wiring or the copper alloy wiring of the inner layer substrate has the same form.

絕緣層是以使銅配線或銅合金配線的一部分露出的方式覆蓋銅配線或銅合金配線的層。覆蓋銅配線或銅合金配線的比例並無特別限制,只要可與安裝於基板上的電子零件(例如半導體元件)等電性連接的銅配線或銅合金配線部殘存即可。 The insulating layer is a layer that covers the copper wiring or the copper alloy wiring so that a part of the copper wiring or the copper alloy wiring is exposed. The ratio of covering the copper wiring or the copper alloy wiring is not particularly limited, and may be any copper wiring or copper alloy wiring portion that can be electrically connected to an electronic component (for example, a semiconductor element) mounted on the substrate.

本步驟中所使用的含有露出配線的積層體中的絕緣層的形態(種類等)與上述第1實施形態中所使用的帶有配線的基板(內層基板)中的絕緣層的形態相同。更具體而言,作為構成絕緣層的絕緣材料,例如可列舉聚醯亞胺樹脂、聚酯樹脂等。 The form (type, etc.) of the insulating layer in the laminated body including the exposed wiring used in this step is the same as that of the insulating layer in the wiring-attached substrate (inner layer substrate) used in the first embodiment. More specifically, examples of the insulating material constituting the insulating layer include a polyimide resin, a polyester resin, and the like.

另外,作為絕緣層,亦可使用網版印刷油墨或感光性覆蓋層。 Further, as the insulating layer, a screen printing ink or a photosensitive cover layer may also be used.

再者,含有露出配線的積層體的製造方法並無特別限制,可採用公知的方法。例如,首先對帶有銅箔的基板應用減成法或半加成法,製造具有銅配線的基板。其次,將絕緣膜層壓於該基板上,形成覆蓋銅配線的一部分的絕緣 層。 Further, the method for producing the laminate including the exposed wiring is not particularly limited, and a known method can be employed. For example, a substrate having copper wiring is first produced by applying a subtractive method or a semi-additive method to a substrate with a copper foil. Next, an insulating film is laminated on the substrate to form an insulation covering a portion of the copper wiring. Floor.

(溶劑(清洗溶劑)) (solvent (cleaning solvent))

清洗含有露出配線的積層體的清洗步驟中所使用的溶劑(清洗溶劑)只要可去除銅配線或銅合金表面以外的表面上所堆積的多餘的唑化合物等,並無特別限制,可使用上述第1實施形態中所使用的溶劑(清洗溶劑)。 The solvent (cleaning solvent) used in the cleaning step of cleaning the laminate including the exposed wiring is not particularly limited as long as the excess azole compound or the like deposited on the surface other than the surface of the copper wiring or the copper alloy can be removed, and the above-mentioned first 1 Solvent (cleaning solvent) used in the embodiment.

(步驟的程序) (procedure of steps)

將層形成步驟分成接觸步驟及清洗步驟這2個步驟進行說明。 The layer forming step is divided into two steps of a contact step and a washing step.

(接觸步驟) (contact step)

接觸步驟是使含有露出配線的積層體與上述遷移層形成用處理液接觸的步驟。具體而言,首先如圖3(a)所示,準備具備基板12與所露出的銅配線或銅合金配線14a的含有露出配線的積層體,使該含有露出配線的積層體與上述遷移抑制層形成用處理液接觸,藉此如圖3(b)所示,於基板12及所露出的配線14a上形成包含唑化合物的層16。該層16形成於基板12上、配線14a上、及絕緣層(未圖示)上。 The contacting step is a step of bringing the layered body including the exposed wiring into contact with the processing liquid for forming a migration layer. Specifically, as shown in FIG. 3( a ), a laminate including an exposed wiring including the substrate 12 and the exposed copper wiring or copper alloy wiring 14 a is prepared, and the laminated body including the exposed wiring and the migration inhibiting layer are prepared. The formation treatment liquid is brought into contact, whereby as shown in FIG. 3(b), a layer 16 containing an azole compound is formed on the substrate 12 and the exposed wiring 14a. This layer 16 is formed on the substrate 12, on the wiring 14a, and on an insulating layer (not shown).

該接觸步驟的程序、條件是根據與上述第1實施形態中所實施的接觸步驟相同的程序、條件來設定。 The procedure and conditions of the contact step are set according to the same procedures and conditions as those of the contact step carried out in the first embodiment.

(清洗步驟) (cleaning step)

清洗步驟是利用溶劑清洗藉由接觸步驟所獲得的含有露出配線的積層體,而於銅配線或銅合金配線表面上形成包含唑化合物的遷移抑制層的步驟。 The washing step is a step of forming a migration inhibiting layer containing an azole compound on the surface of the copper wiring or the copper alloy wiring by using a solvent to clean the laminate including the exposed wiring obtained by the contacting step.

具體而言,利用上述清洗溶劑清洗圖3(b)中所獲得的設置有包含唑化合物的層16的含有露出配線的積層體,藉此如圖3(c)所示,配線14a間的包含唑化合物的層16被去除,並且配線上的多餘的唑化合物被去除,而於配線14a上形成遷移抑制層18。再者,與配線14a間的包含唑化合物的層16被去除的同時,絕緣層(未圖示)上的包含唑化合物的層16亦被去除。 Specifically, the layered body including the exposed wiring provided with the layer 16 containing the azole compound obtained in FIG. 3(b) is washed by the above-described cleaning solvent, whereby the inclusion between the wires 14a is as shown in FIG. 3(c). The layer 16 of the azole compound is removed, and the excess azole compound on the wiring is removed, and the migration inhibiting layer 18 is formed on the wiring 14a. Further, while the layer 16 containing the azole compound between the wiring 14a is removed, the layer 16 containing the azole compound on the insulating layer (not shown) is also removed.

該清洗步驟的程序、條件是根據與上述第1實施形態中所實施的清洗步驟相同的程序、條件來設定。 The procedures and conditions of the washing step are set according to the same procedures and conditions as those of the washing step carried out in the first embodiment.

(遷移抑制層) (migration suppression layer)

藉由經過上述步驟,可於所露出的銅配線或銅合金配線表面上形成包含唑化合物的遷移抑制層。再者,如圖3(c)所示,較佳為於所露出的配線14a表面以外的面上,包含唑化合物的層實質上已被去除。即,較佳為實質上僅於所露出的配線14a表面上形成有遷移抑制層18。再者,所謂配線14a表面,如圖3(c)所示,是指與基板12接觸的下表面以外的上表面及側面。 By the above steps, a migration inhibiting layer containing an azole compound can be formed on the exposed copper wiring or copper alloy wiring surface. Further, as shown in FIG. 3(c), it is preferable that the layer containing the azole compound is substantially removed on the surface other than the surface of the exposed wiring 14a. That is, it is preferable that the migration suppressing layer 18 is formed substantially only on the surface of the exposed wiring 14a. Further, the surface of the wiring 14a is an upper surface and a side surface other than the lower surface in contact with the substrate 12 as shown in FIG. 3(c).

所形成的遷移抑制層的形態(唑化合物的含量、附著量等)與上述第1實施形態中所獲得的遷移抑制層的形態相同。 The form of the migration inhibiting layer (the content of the azole compound, the amount of adhesion, and the like) is the same as that of the migration inhibiting layer obtained in the first embodiment.

[乾燥步驟] [Drying step]

於該步驟中,對設置有遷移抑制層的積層體進行加熱乾燥。若水分殘存於積層體上,則有可能會促進銅離子的遷移,因此較佳為藉由設置該步驟來去除水分。 In this step, the layered body provided with the migration inhibiting layer is dried by heating. If moisture remains on the laminate, the migration of copper ions may be promoted. Therefore, it is preferred to remove the moisture by providing this step.

再者,本步驟是任意的步驟,於層形成步驟中所使用的溶劑為揮發性優異的溶劑的情況等時,亦可不實施本步驟。 In addition, this step is an arbitrary step, and when the solvent used in the layer formation step is a solvent having excellent volatility, the step may not be carried out.

乾燥步驟的程序、條件是根據與上述第1實施形態中所實施的乾燥步驟相同的程序、條件來設定。 The procedure and conditions of the drying step are set according to the same procedures and conditions as those of the drying step carried out in the first embodiment.

(具有遷移抑制層的積層體) (Laminar body with migration suppression layer)

藉由經過上述製造方法,可獲得如下的積層體(具有遷移抑制層的積層體的第2實施形態),該積層體具有基板、配置於基板上的銅配線或銅合金配線、形成於銅配線或銅合金配線的一部分的表面上的包含唑化合物的遷移抑制層、及配置於基板上且覆蓋銅配線或銅合金配線的殘部的表面的絕緣層。換言之,該積層體是銅配線或銅合金配線的一部分被絕緣層覆蓋,未被絕緣層覆蓋的銅配線或銅合金配線的表面被包含唑化合物的遷移抑制層包覆的具有表面包覆配線的積層體。 By the above-described production method, a laminate (a second embodiment having a laminate having a migration suppression layer) having a substrate, a copper wiring or a copper alloy wiring disposed on the substrate, and a copper wiring can be obtained. Or a migration inhibiting layer containing an azole compound on the surface of a part of the copper alloy wiring, and an insulating layer disposed on the substrate and covering the surface of the residual portion of the copper wiring or the copper alloy wiring. In other words, the laminated body is covered with an insulating layer by a part of the copper wiring or the copper alloy wiring, and the surface of the copper wiring or the copper alloy wiring which is not covered by the insulating layer is covered with the migration-inhibiting layer containing the azole compound and has the surface-covered wiring. Laminated body.

更具體而言,如圖4所示,可獲得如下的具有表面包覆配線的積層體100,其具有基板12、配置於基板12上的配線14、配置於基板12上且包覆配線14的一部分的絕緣層20、及包覆未設置有絕緣層20的配線14a的表面上的遷移抑制層18。 More specifically, as shown in FIG. 4 , the laminated body 100 having the surface-covered wiring having the substrate 12 , the wiring 14 disposed on the substrate 12 , and the wiring 12 disposed on the substrate 12 can be obtained. A part of the insulating layer 20 and a migration inhibiting layer 18 on the surface of the wiring 14a on which the insulating layer 20 is not provided.

所獲得的積層體可用於各種用途,例如可用作印刷配線基板,薄膜覆晶封裝(Chip on Film,COF)基板用、或捲帶自動接合(Tape Automated Bonding,TAB)基板用的基板。 The obtained laminate can be used for various purposes, for example, as a substrate for a printed wiring board, a chip on film (COF) substrate, or a Tape Automated Bonding (TAB) substrate.

[實例] [Example]

以下,藉由實例來更詳細地說明本發明,但本發明並不限定於該些實例。 Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited to the examples.

(實例1) (Example 1)

使用聚醯亞胺膜(東麗.杜邦公司製造Kapton膜),形成具備L/S=100 μm/100 μm的梳型銅配線及絕緣層的含有露出配線的積層體(相當於印刷配線基板)。含有露出配線的積層體是藉由以下的方法來製作。 A polyimide film (a Kapton film manufactured by Toray DuPont Co., Ltd.) is used to form a laminate including an exposed wiring having a comb-shaped copper wiring and an insulating layer of L/S = 100 μm/100 μm (corresponding to a printed wiring board) . The laminate including the exposed wiring was produced by the following method.

經由25 μm厚的黏著劑(日立化成公司製造N4)將20 μm厚的銅箔(古河電工公司製造F3-WS箔)貼合於25 μm厚的聚醯亞胺膜(東麗.杜邦公司製造Kapton膜)上。 20 μm thick copper foil (F3-WS foil manufactured by Furukawa Electric Co., Ltd.) was bonded to a 25 μm thick polyimide film (made by Toray DuPont) via a 25 μm thick adhesive (N4 manufactured by Hitachi Chemical Co., Ltd.) Kapton film).

於100℃下,以4 kgf/cm2的條件將光阻劑(日立化成工業公司製造Photec H-W425)層壓於銅箔帶上,經由光罩以80 mJ/cm2的條件進行曝光,然後進行顯影,從而形成抗蝕阻劑圖案。 A photoresist (Photec H-W425 manufactured by Hitachi Chemical Co., Ltd.) was laminated on a copper foil tape at 100 ° C under conditions of 4 kgf/cm 2 , and exposed through a mask at 80 mJ/cm 2 . Development is then carried out to form a resist pattern.

其後,利用氯化鐵蝕刻溶液將未被抗蝕阻劑覆蓋的銅箔選擇性地蝕刻去除,然後剝離抗蝕阻劑,而獲得L/S=100 μm/100 μm的銅配線。 Thereafter, the copper foil not covered by the resist was selectively etched away by using a ferric chloride etching solution, and then the resist was peeled off to obtain a copper wiring of L/S = 100 μm / 100 μm.

進而,其後將絕緣層(日立化成公司製造FZ2500)層壓於約一半的所獲得的基板上,然後進行曝光、烘烤,從而獲得含有露出配線的積層體。再者,所獲得的含有露出配線的積層體中的銅配線的約一半由絕緣層包覆。 Further, an insulating layer (FZ2500 manufactured by Hitachi Chemical Co., Ltd.) was laminated on about half of the obtained substrate, and then exposed and baked to obtain a laminate including exposed wiring. Further, about half of the copper wiring in the obtained laminate including the exposed wiring was covered with an insulating layer.

使1,2,4-三唑-3-羧基醯胺溶解於進行了1小時左右氮 氣起泡的純水中,製成遷移抑制層形成用處理液(1,2,4-三唑-3-羧基醯胺於處理液中的含量:2.5質量%)。利用溶存氧計DO-31P(DKK-TOA)測定處理液中的溶存氧量,結果溶存氧量為2.0 ppm。 Dissolving 1,2,4-triazole-3-carboxyguanamine in nitrogen for about 1 hour In the pure water-foamed water, a treatment liquid for forming a migration inhibiting layer (content of 1,2,4-triazole-3-carboxyguanamine in the treatment liquid: 2.5% by mass) was prepared. The amount of dissolved oxygen in the treatment liquid was measured by a dissolved oxygen meter DO-31P (DKK-TOA), and as a result, the dissolved oxygen amount was 2.0 ppm.

繼而,使所獲得的含有露出配線的積層體於所製作的處理液中浸漬5分鐘。其後,使用乙醇清洗所獲得的含有露出配線的積層體(接觸時間:2分鐘,液溫:25℃),而獲得具有遷移抑制層的積層體(相當於柔性印刷配線基板)。進而,其後於100℃下對積層體進行2分鐘乾燥處理。 Then, the obtained laminate containing the exposed wiring was immersed in the produced treatment liquid for 5 minutes. Thereafter, a laminate including exposed wiring (contact time: 2 minutes, liquid temperature: 25 ° C) obtained by washing with ethanol was used to obtain a laminate having a migration inhibiting layer (corresponding to a flexible printed wiring board). Further, the laminate was dried at 100 ° C for 2 minutes.

再者,藉由利用水的配線間萃取液的吸光度測定,無法於銅配線間的基板表面確認到遷移抑制層,而確認已藉由乙醇清洗將遷移抑制層去除。 In addition, by measuring the absorbance of the inter-wiring extract using water, the migration inhibiting layer could not be confirmed on the surface of the substrate between the copper wirings, and it was confirmed that the migration inhibiting layer was removed by ethanol washing.

(利用水滴滴下試驗的基板壽命測定) (Measurement of substrate life by drop drop test)

使用所獲得的積層體,於傳導度0.05 μS/cm2、30 mL的純水中,以施加電壓為1.2 V的條件分別施加5分鐘及10分鐘後,於光學顯微鏡下(奧林巴斯公司製造BX-51)測定樹枝狀結晶的產生,該樹枝狀結晶是未由絕緣層包覆的配線間的自陽極至陰極所產生的連結配線間的樹枝狀結晶。將實例1中所獲得的結果示於表1。 Using the obtained laminate, under the conditions of an applied voltage of 1.2 V for 5 minutes and 10 minutes in pure water having a conductivity of 0.05 μS/cm 2 and 30 mL, under an optical microscope (Olympus) Production BX-51) The production of dendrites was measured, and the dendrites were dendrites between the wirings from the anode to the cathode between the wirings not covered with the insulating layer. The results obtained in Example 1 are shown in Table 1.

再者,根據以下的基準進行評價。 Furthermore, evaluation was performed based on the following criteria.

「○」:於配線間未看到樹枝狀結晶的產生的情況 "○": No occurrence of dendrite in the wiring closet

「△」:於配線間看到樹枝狀結晶的產生,但未看到連結配線間的樹枝狀結晶,實用上無問題的情況 "△": The occurrence of dendrites was observed in the wiring closet, but no dendrite was formed in the wiring closet, and there was no problem in practical use.

「×」:產生了連結配線間的樹枝狀結晶,實用上有問 題的情況 "X": The dendrite that connects the wiring closet is generated. Situation

(實例2) (Example 2)

使用1,2,3-三唑來代替1,2,4-三唑-3-羧基醯胺,除此以外,根據與實例1相同的程序製造積層體。其後,使用所獲得的積層體,實施實例1中所進行的水滴滴下試驗。將結果示於表1。 A laminate was produced according to the same procedure as in Example 1 except that 1,2,3-triazole was used instead of 1,2,4-triazole-3-carboxydecylamine. Thereafter, the water drop dropping test carried out in Example 1 was carried out using the obtained laminate. The results are shown in Table 1.

(實例3) (Example 3)

使用1,2,4-三唑來代替1,2,4-三唑-3-羧基醯胺,除此以外,根據與實例1相同的程序製造積層體。其後,使用所獲得的積層體,實施實例1中所進行的水滴滴下試驗。將結果示於表1。 A laminate was produced according to the same procedure as in Example 1 except that 1,2,4-triazole was used instead of 1,2,4-triazole-3-carboxydecylamine. Thereafter, the water drop dropping test carried out in Example 1 was carried out using the obtained laminate. The results are shown in Table 1.

(實例4) (Example 4)

於實例3中,將氮氣起泡的時間自1小時變成5分鐘,除此以外,根據與實例3相同的程序製造積層體。其後,使用所獲得的積層體,實施實例1中所進行的水滴滴下試驗。將結果示於表1。 In Example 3, a laminate was produced according to the same procedure as in Example 3 except that the time for bubbling nitrogen gas was changed from 1 hour to 5 minutes. Thereafter, the water drop dropping test carried out in Example 1 was carried out using the obtained laminate. The results are shown in Table 1.

(實例5) (Example 5)

於實例3中,將氮氣起泡的時間自1小時變成30分鐘,除此以外,根據與實例3相同的程序製造積層體。其後,使用所獲得的積層體,實施實例1中所進行的水滴滴下試驗。將結果示於表1。 In Example 3, a laminate was produced according to the same procedure as in Example 3 except that the time for bubbling nitrogen gas was changed from 1 hour to 30 minutes. Thereafter, the water drop dropping test carried out in Example 1 was carried out using the obtained laminate. The results are shown in Table 1.

(實例6) (Example 6)

使用覆銅積層板(日立化成公司製造MCL-E-679F,基板:玻璃環氧基板),並藉由半加成法來形成具備L/S=23 μm/27 μm的銅配線的帶有配線的基板。帶有配線的基板是藉由以下的方法來製作。 A copper clad laminate (MCL-E-679F manufactured by Hitachi Chemical Co., Ltd., substrate: glass epoxy substrate) was used, and formed by a semi-additive method with L/S=23 Wiring board with copper wiring of μm/27 μm. The substrate with wiring is fabricated by the following method.

對覆銅積層板進行酸清洗、水洗、乾燥後,利用真空層壓機,於0.2 MPa的壓力下以70℃的條件層壓乾膜抗蝕劑(DFR,商品名:RY3315,日立化成工業股份有限公司製造)。層壓後,利用中心波長為365 nm的曝光機,以70 mJ/m2的條件對銅圖案形成部進行遮罩曝光。其後,利用1%碳酸鈉水溶液進行顯影,並進行水洗,從而獲得阻鍍劑圖案。 After the copper-clad laminate was subjected to acid cleaning, water washing, and drying, a dry film resist (DFR, trade name: RY3315, Hitachi Chemical Co., Ltd.) was laminated at 70 ° C under a pressure of 0.2 MPa using a vacuum laminator. Made by Ltd.). After lamination, the copper pattern forming portion was mask exposed at 70 mJ/m 2 using an exposure machine having a center wavelength of 365 nm. Thereafter, development was carried out using a 1% aqueous sodium carbonate solution, and water washing was carried out to obtain a pattern of the plating resist.

經過鍍敷前處理、水洗後,於抗蝕劑圖案間所露出的銅上實施電解鍍敷。此時,電解液使用硫酸銅(II)的硫酸酸性溶液,將純度為99%左右的粗銅的板製成陽極,將覆銅積層板製成陰極。以50℃~60℃、0.2 V~0.5 V進行電解,藉此銅析出至陰極的銅上。其後,進行水洗、乾燥。 After pre-plating treatment and water washing, electrolytic plating is performed on the copper exposed between the resist patterns. At this time, in the electrolytic solution, a sulfuric acid acidic solution of copper (II) sulfate was used, and a plate of crude copper having a purity of about 99% was made into an anode, and a copper-clad laminate was made into a cathode. Electrolysis is carried out at 50 ° C to 60 ° C and 0.2 V to 0.5 V, whereby copper is deposited on the copper of the cathode. Thereafter, it is washed with water and dried.

為了剝離抗蝕劑圖案,使基板於45℃的4%NaOH水溶液中浸漬60秒。其後,對所獲得的基板進行水洗,然後於1%硫酸中浸漬30秒。其後,再次進行水洗。 In order to peel off the resist pattern, the substrate was immersed in a 4% NaOH aqueous solution at 45 ° C for 60 seconds. Thereafter, the obtained substrate was washed with water and then immersed in 1% sulfuric acid for 30 seconds. Thereafter, the water was washed again.

利用將過氧化氫、硫酸作為主成分的蝕刻液,對銅圖案間的已導通的銅進行快速蝕刻,然後進行水洗、乾燥。 The copper which is turned on between the copper patterns is quickly etched by an etching solution containing hydrogen peroxide or sulfuric acid as a main component, and then washed with water and dried.

繼而,利用前處理劑(MEC公司製造CA-5330)將銅配線表面的污垢等去除後,利用粗化處理劑(MEC公司製造CZ-8110)實施銅配線表面的粗化處理。 Then, the surface of the copper wiring was removed by a pretreatment agent (manufactured by MEC Corporation, CA-5330), and then the surface of the copper wiring was roughened by a roughening treatment agent (CZ-8110 manufactured by MEC Corporation).

繼而,使所獲得的帶有配線的基板於實例3中所使用的遷移抑制層形成用處理液中浸漬30秒。其後,使用乙醇 清洗所獲得的帶有配線的基板(接觸時間:2分鐘,液溫:25℃)。進而,其後於100℃下對帶有配線的基板進行2分鐘乾燥處理。 Then, the obtained wiring-attached substrate was immersed in the treatment liquid for forming migration suppression layer used in Example 3 for 30 seconds. Thereafter, use ethanol The obtained substrate with wiring was cleaned (contact time: 2 minutes, liquid temperature: 25 ° C). Further, the substrate with wiring was dried at 100 ° C for 2 minutes.

藉由進行反射率測定,而確認於銅配線上形成有包含1,2,4-三唑的遷移抑制層。 By performing reflectance measurement, it was confirmed that a migration inhibiting layer containing 1,2,4-triazole was formed on the copper wiring.

再者,於銅配線間的基板表面,藉由利用水的配線間萃取液的吸光度測定無法確認到遷移抑制層,而確認已藉由乙醇清洗將遷移抑制層去除。 In addition, in the surface of the substrate between the copper wirings, the migration inhibiting layer could not be confirmed by the absorbance measurement of the inter-wiring extract using water, and it was confirmed that the migration inhibiting layer was removed by ethanol washing.

將絕緣層(太陽油墨公司製造PFR-800)層壓於實施了乾燥處理的帶有配線的基板上,其後進行曝光、烘烤,從而製成具有遷移抑制層的積層體(相當於印刷配線基板)(絕緣層的膜厚:35 μm)。對所獲得的積層體進行以下的壽命測定。 An insulating layer (PFR-800 manufactured by Sun Ink Co., Ltd.) was laminated on a wiring-attached substrate subjected to a drying process, and then exposed and baked to form a laminate having a migration inhibiting layer (corresponding to a printed wiring) Substrate) (film thickness of insulating layer: 35 μm). The following life measurement was performed on the obtained laminate.

(利用高加速應力試驗(Highly Accelerated Stress Test,HAST)的基板壽命測定) (Measurement of substrate life using Highly Accelerated Stress Test (HAST))

使用所獲得的積層體,於濕度85%、溫度130度、壓力1.2 atm、電壓100 V的條件下進行壽命測定(使用裝置:espec公司製造,EHS-221MD)。 Using the obtained laminate, the life measurement was carried out under the conditions of a humidity of 85%, a temperature of 130 degrees, a pressure of 1.2 atm, and a voltage of 100 V (using apparatus: manufactured by Espec Corporation, EHS-221MD).

作為評價方法,實施20桿的試驗,配線間的電阻值將1×109 Ω作為基準電阻值。將自試驗開始起經過120小時之時的電阻值顯示基準電阻值以上的桿設為合格。 As a method of evaluation, a test of 20 shots was carried out, and the resistance value between the wirings was 1 × 10 9 Ω as a reference resistance value. The rod whose resistance value was greater than or equal to the reference resistance value after 120 hours from the start of the test was set as the pass.

將實例6中所獲得的結果示於表1。 The results obtained in Example 6 are shown in Table 1.

(比較例1) (Comparative Example 1)

於實例3中,進行氧氣起泡來代替氮氣起泡,並使用 溶存氧量為8.5 ppm的遷移抑制層形成用處理液,除此以外,根據與實例3相同的程序製造積層體。其後,使用所獲得的積層體,實施實例1中所進行的水滴滴下試驗。將結果示於表1。 In Example 3, oxygen foaming was performed instead of nitrogen foaming and used. A laminate was produced according to the same procedure as in Example 3 except that the treatment liquid for forming a migration suppression layer was dissolved in an amount of 8.5 ppm. Thereafter, the water drop dropping test carried out in Example 1 was carried out using the obtained laminate. The results are shown in Table 1.

(比較例2) (Comparative Example 2)

使用乙二胺四乙酸代替實例1中所使用的1,2,4-三唑-3-羧基醯胺,除此以外,根據與實例1相同的程序製造積層體。其後,使用所獲得的積層體,實施實例1中所進行的水滴滴下試驗。將結果示於表1。 A laminate was produced according to the same procedure as in Example 1 except that ethylenediaminetetraacetic acid was used instead of the 1,2,4-triazole-3-carboxyoximeamine used in Example 1. Thereafter, the water drop dropping test carried out in Example 1 was carried out using the obtained laminate. The results are shown in Table 1.

(比較例3) (Comparative Example 3)

使用苯并三唑代替實例1中所使用的1,2,4-三唑-3-羧基醯胺,除此以外,根據與實例1相同的程序製造積層體。其後,使用所獲得的積層體,實施實例1中所進行的水滴滴下試驗。將結果示於表1。 A laminate was produced according to the same procedure as in Example 1 except that benzotriazole was used instead of the 1,2,4-triazole-3-carboxyguanamine used in Example 1. Thereafter, the water drop dropping test carried out in Example 1 was carried out using the obtained laminate. The results are shown in Table 1.

(比較例4) (Comparative Example 4)

於實例6中,進行氧氣起泡來代替氮氣起泡,並使用溶存氧量為8.5 ppm的遷移抑制層形成用處理液,除此以外,根據與實例6相同的程序製造積層體。其後,使用所獲得的積層體,實施實例6中所進行的HAST試驗。將結果示於表1。 In Example 6, a laminate was produced according to the same procedure as in Example 6 except that oxygen foaming was used instead of nitrogen foaming, and a treatment liquid for forming a migration suppression layer having a dissolved oxygen amount of 8.5 ppm was used. Thereafter, the HAST test carried out in Example 6 was carried out using the obtained laminate. The results are shown in Table 1.

以下的表1中,壽命測定一欄的數值表示(120小時後顯示1×109 Ω以上的桿數/試驗桿數),20/20為最佳的結果。 In Table 1 below, the numerical value in the column of the life measurement indicates (the number of rods of 1 × 10 9 Ω or more after 120 hours), and 20/20 is the best result.

另外,表1中,「pH」表示各實例及比較例中所使用 的遷移抑制劑處理液的pH。pH的測定使用pH計(DKK-TOA公司製造)。表1中的「附著量」表示處理液中所含有的化合物(1,2,3-三唑、1,2,4-三唑等)於銅配線上的附著量,其測定是藉由上述吸光度法來進行。 In addition, in Table 1, "pH" is used in each example and comparative example. The migration inhibitor treats the pH of the solution. The pH was measured using a pH meter (manufactured by DKK-TOA Co., Ltd.). The "adhesion amount" in Table 1 indicates the amount of the compound (1,2,3-triazole, 1,2,4-triazole, etc.) contained in the treatment liquid on the copper wiring, and the measurement is performed by the above. The absorbance method is used.

如表1所示,已確認於使用本發明的遷移抑制層形成用處理液的實例1~實例5中,未看到配線間的樹枝狀結晶的連結,銅離子的遷移得到抑制。 As shown in Table 1, in Examples 1 to 5 in which the treatment liquid for forming a migration suppression layer of the present invention was used, the connection of dendrites between the wirings was not observed, and migration of copper ions was suppressed.

尤其,於溶存氧量為實例1~實例3及實例5中,即便於將水滴滴下試驗的電壓的施加時間自5分鐘變更為10分鐘的情況下,亦未看到配線間的樹枝狀結晶的產生。即,當溶存氧量未滿4.0 ppm時,配線間的絕緣可靠性更優異。 In particular, in the case of the dissolved oxygen amount in Examples 1 to 3 and Example 5, even when the application time of the voltage for dropping the water drop test was changed from 5 minutes to 10 minutes, no dendritic crystals between the wirings were observed. produce. That is, when the dissolved oxygen amount is less than 4.0 ppm, the insulation reliability between the wirings is further excellent.

進而,如實例6所示,已確認於HAST試驗中顯示優異的壽命測定結果,配線間的絕緣可靠性優異。 Further, as shown in Example 6, it was confirmed that the endurance measurement result was excellent in the HAST test, and the insulation reliability between wirings was excellent.

另一方面,於使用溶存氧量為規定值以上的處理液的比較例1、使用唑化合物以外的化合物的比較例2、及使用苯并三唑化合物的比較例3中,確認到連結配線間的樹枝狀結晶的產生,配線間的遷移抑制效果欠佳。進而,如比較例4所示,於HAST試驗中,配線間的絕緣可靠性亦欠佳。 On the other hand, in Comparative Example 1 using a treatment liquid having a dissolved oxygen amount of a predetermined value or more, Comparative Example 2 using a compound other than the azole compound, and Comparative Example 3 using a benzotriazole compound, it was confirmed that the connection wiring was confirmed. The generation of dendrites and the effect of suppressing migration between wiring lines are not good. Further, as shown in Comparative Example 4, in the HAST test, the insulation reliability between wirings was also poor.

10‧‧‧帶有配線的基板 10‧‧‧Substrate with wiring

12‧‧‧基板 12‧‧‧Substrate

14‧‧‧銅配線或銅合金配線 14‧‧‧Bronze wiring or copper alloy wiring

14a‧‧‧所露出的銅配線或銅合金配線 14a‧‧‧ exposed copper wiring or copper alloy wiring

14b‧‧‧由絕緣層包覆的銅配線或銅合金配線 14b‧‧‧Copper wiring or copper alloy wiring covered by insulating layer

16‧‧‧包含唑化合物的層 16‧‧‧layer containing azole compound

18‧‧‧遷移抑制層 18‧‧‧migration suppression layer

20‧‧‧絕緣層 20‧‧‧Insulation

30、100‧‧‧具有遷移抑制層的積層體 30, 100‧‧‧Layer with migration inhibition layer

40‧‧‧含有露出配線的積層體 40‧‧‧Laminated body with exposed wiring

圖1(a)~圖1(d)是依次表示本發明的具有遷移抑制層的積層體的製造方法的第1實施形態中的各步驟的示意性剖面圖。 1(a) to 1(d) are schematic cross-sectional views showing, in order, the respective steps in the first embodiment of the method for producing a layered product having a migration inhibiting layer of the present invention.

圖2是本發明中所使用的含有露出配線的積層體的一部分的立體剖面圖。 Fig. 2 is a perspective cross-sectional view showing a part of a laminate including exposed wiring used in the present invention.

圖3(a)~圖3(c)是依次表示本發明的具有遷移抑制層的積層體的製造方法的第2實施形態中的各步驟的示意性剖面圖。圖3(a)為圖1的A-A線剖面圖。 3(a) to 3(c) are schematic cross-sectional views showing, in order, the respective steps in the second embodiment of the method for producing a layered product having a migration inhibiting layer of the present invention. Fig. 3 (a) is a cross-sectional view taken along line A-A of Fig. 1.

圖4是本發明的具有遷移抑制層的積層體的第2實施形態的一部分的立體剖面圖。 Fig. 4 is a perspective cross-sectional view showing a part of a second embodiment of a laminate having a migration suppression layer according to the present invention.

12‧‧‧基板 12‧‧‧Substrate

14‧‧‧銅配線或銅合金配線 14‧‧‧Bronze wiring or copper alloy wiring

14a‧‧‧所露出的銅配線或銅合金配線 14a‧‧‧ exposed copper wiring or copper alloy wiring

14b‧‧‧由絕緣層包覆的銅配線或銅合金配線 14b‧‧‧Copper wiring or copper alloy wiring covered by insulating layer

18‧‧‧遷移抑制層 18‧‧‧migration suppression layer

20‧‧‧絕緣層 20‧‧‧Insulation

100‧‧‧具有遷移抑制層的積層體 100‧‧‧Layer with migration inhibition layer

Claims (5)

一種遷移抑制層形成用處理液,其用以形成抑制銅配線或銅合金配線中的離子遷移的遷移抑制層,上述遷移抑制層形成用處理液含有唑化合物與水,且溶存氧量為7.0 ppm以下。 A treatment liquid for forming a migration suppression layer for forming a migration inhibiting layer for suppressing ion migration in a copper wiring or a copper alloy wiring, wherein the treatment liquid for forming a migration inhibiting layer contains an azole compound and water, and the dissolved oxygen amount is 7.0 ppm. the following. 如申請專利範圍第1項所述之遷移抑制層形成用處理液,其中上述溶存氧量未滿4.0 ppm。 The treatment liquid for forming a migration suppression layer according to Item 1, wherein the amount of dissolved oxygen is less than 4.0 ppm. 如申請專利範圍第1項所述之遷移抑制層形成用處理液,其中上述唑化合物包含1,2,3-三唑及/或1,2,4-三唑。 The treatment liquid for forming a migration inhibiting layer according to the above aspect of the invention, wherein the azole compound comprises 1,2,3-triazole and/or 1,2,4-triazole. 一種具有遷移抑制層的積層體的製造方法,其包括:層形成步驟,使具有基板以及配置於上述基板上的銅配線或銅合金配線的帶有配線的基板、與如申請專利範圍第1項至第3項中任一項所述之遷移抑制層形成用處理液接觸,其後利用溶劑清洗上述帶有配線的基板,而於上述銅配線或銅合金配線表面上形成包含唑化合物的遷移抑制層;以及絕緣層形成步驟,於設置有上述遷移抑制層的上述帶有配線的基板上形成絕緣層。 A method for producing a laminate having a migration inhibiting layer, comprising: a layer forming step of causing a wiring-attached substrate having a substrate and a copper wiring or a copper alloy wiring disposed on the substrate, and the first item of the patent application scope When the treatment liquid for forming a migration suppression layer according to any one of the items 3 is contacted, the substrate having the wiring is washed with a solvent, and migration inhibition of the azole compound is formed on the surface of the copper wiring or the copper alloy wiring. And an insulating layer forming step of forming an insulating layer on the wiring-equipped substrate on which the migration inhibiting layer is provided. 一種具有遷移抑制層的積層體的製造方法,其包括如下的層形成步驟:使含有露出配線的積層體與如申請專利範圍第1項至第3項中任一項所述之遷移抑制層形成用處理液接觸,其後利用溶劑清洗上述含有露出配線的積層體,而於所露出 的銅配線或銅合金配線表面上形成遷移抑制層,上述含有露出配線的積層體具有基板、配置於上述基板上的上述銅配線或銅合金配線以及絕緣層,上述絕緣層配置於上述基板上,且以使上述銅配線或銅合金配線的一部分露出的方式覆蓋上述銅配線或銅合金配線。 A method for producing a laminate having a migration inhibiting layer, comprising the step of forming a laminate comprising exposed wiring and a migration inhibiting layer according to any one of claims 1 to 3 Contact with the treatment liquid, and then the above-mentioned laminated body containing the exposed wiring is washed with a solvent to be exposed The migration preventing layer is formed on the surface of the copper wiring or the copper alloy wiring, and the laminated body including the exposed wiring includes a substrate, the copper wiring or the copper alloy wiring and the insulating layer disposed on the substrate, and the insulating layer is disposed on the substrate. Further, the copper wiring or the copper alloy wiring is covered so that a part of the copper wiring or the copper alloy wiring is exposed.
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