TW201230902A - Substrate with fine metal pattern, print circuit board and semiconductor device; and production method of substrate with fine metal pattern, print circuit board and semiconductor device - Google Patents
Substrate with fine metal pattern, print circuit board and semiconductor device; and production method of substrate with fine metal pattern, print circuit board and semiconductor device Download PDFInfo
- Publication number
- TW201230902A TW201230902A TW100121202A TW100121202A TW201230902A TW 201230902 A TW201230902 A TW 201230902A TW 100121202 A TW100121202 A TW 100121202A TW 100121202 A TW100121202 A TW 100121202A TW 201230902 A TW201230902 A TW 201230902A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- wiring board
- conductor circuit
- palladium
- nickel
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- H10P14/46—
-
- H10W72/5522—
-
- H10W72/884—
-
- H10W90/734—
-
- H10W90/754—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Chemically Coating (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
201230902 六、發明說明: 【發明所屬之技術領蜮】 本發明係關於附有金屬微細圖案之基材、印刷佈線板、 半導體裝置及其製造方法。 【先前技術】 印刷佈線板上之電路係因要確保焊錫接合、焊線結合等 連接可靠性之目的而進行鍍金。 作為鍍金之代表性方法之一,係有無電解錄金锻敷法。 關於此方法,係於利用清淨機等適當方法對鍍敷對象進行 前處理之後,賦予鈀觸媒,其後,進一步依序進行無電解 鍍鎳處理及無電解鍍金處理。ENIG法(Electroless Nickei201230902 VI. Description of the Invention: [Technical Fields of the Invention] The present invention relates to a substrate with a fine metal pattern, a printed wiring board, a semiconductor device, and a method of manufacturing the same. [Prior Art] The circuit on the printed wiring board is gold-plated for the purpose of ensuring connection reliability such as solder bonding and wire bonding. As one of the representative methods of gold plating, there is an electroless gold forging method. In this method, after the plating target is pretreated by an appropriate method such as a cleaner, a palladium catalyst is supplied, and thereafter, electroless nickel plating treatment and electroless gold plating treatment are sequentially performed. ENIG method (Electroless Nickei
Immersion Gold)係無電解鎳_金鍍敷法的一種,為在無電解 鍵金處理階段中’進行取代鍵金處理(Immersi〇nG〇id)之方 法。 在透過ENIG法將端子部分予以鍍金之情形下,於為了 焊線結合而將該端子部分進行加熱處理時,會有鎳在金被 膜上擴散而連接可靠性降低的問題。對於鎳擴散之問題, 係進一步於鎳-金被膜上進行無電解鍍金處理,藉由將金的 膜厚增厚,而可確保耐熱性。 然而’就環境對策的觀點而言,今後所必須之無鉛焊錫 的溶融溫度達到260〇C左右,係高於先前技術之鉛焊錫的 炼融溫度。因此,當考慮到無鉛焊錫的對應時,關於端子 100121202 4 201230902 部分之鍍金,則需要較先前技術更高的耐熱性。ENIG法係 對於進行無鉛焊錫時之高溫加熱有無法充分對應之情形, 又,會有若想要確保高耐熱性而越是增厚金的膜厚的話, 則成本越高的問題。 為了解決上述問題,而開始檢討無電解鎳_鈀_金鍍敷法 之應用。此方法係在上述無電解鎳-金鍍敷法之無電解鍍鎳 處理之後,進行無電解鍍鈀處理,並接著進行無電解鍍金 處理。 ENEPIG 法(Electroless Nickel mectr〇less palladiumImmersion Gold) is a method of electroless nickel-gold plating, which is a method of performing substitution gold treatment (Immersi〇nG〇id) in the stage of electroless gold bonding. When the terminal portion is gold-plated by the ENIG method, when the terminal portion is heat-treated for bonding of the bonding wires, nickel is diffused on the gold film to lower the connection reliability. In the problem of nickel diffusion, electroless gold plating is further performed on the nickel-gold film, and heat resistance is ensured by thickening the thickness of gold. However, from the viewpoint of environmental countermeasures, the melting temperature of the lead-free solder required in the future is about 260 〇C, which is higher than the melting temperature of the prior art lead solder. Therefore, when considering the correspondence of lead-free solder, the gold plating of the portion of the terminal 100121202 4 201230902 requires higher heat resistance than the prior art. The ENIG method is not suitable for high-temperature heating in the case of lead-free soldering, and there is a problem that the higher the heat resistance and the thicker the thickness of gold, the higher the cost. In order to solve the above problems, the application of the electroless nickel-palladium-gold plating method was reviewed. This method is subjected to electroless nickel plating treatment after the electroless nickel plating treatment by the above electroless nickel-gold plating method, followed by electroless gold plating treatment. ENEPIG method (Electroless Nickel mectr〇less palladium
Immersion Gold)係無電解鎳-鈀-金鍍敷法之一種,於無電解 鎳-鈀-金鍍敷法之無電解鍍金處理階段,進行取代鍍金處 理(Immersion Gold)之方法(專利文獻υ。無電解鎳_鈀金鍍 敷法,係使電路或端子部分之導體材料的擴散防止及耐蝕 性提升、鎳氧化防止及擴散防止為可能。又,無電解鎳_ 把-金鑛敷法係藉由設置無電解鍵把被膜,而可防止因為金 所造成之鎳氧化,故可提升熱負荷大之無鉛焊錫接合的可 靠性,更因為即便不將金膜厚予以增厚也不會產生錄擴 散’所以亦有可較無電解鎳-金鍍敷法更低成本化的優點。 [專利文獻1]日本專利特開2008-144188號公報 【發明内容】 (發明所欲解決之問題) 相較於無電解鎳-金鍍敷法,以上所述之無電解錄-把-金 100121202 < 201230902 鐘敷法係對於高熱負荷之連接可靠性高。然而,當對印刷 佈線板之電路進行無電解鎳I金鍍㈣,係發現到:於 無電解鍍鈀處理階段,今凰 、 _子部分周_析:屬::=::一 甚至成為麵接端句㈣糾之原=面之品質下降’ 又,亦發現到:伴隨著電路的微細化 則鄰接導體魏間之_表面上越容㈣;;;越狹乍’ 本發明係為了解決上述問題而完成者,生上二 部分、印刷刷佈線板之端子 之樹脂_上所支樓之金==體電路表面或其他 的對象表面當賴敷處理 鍍敷時,可抑制金/邊處理對象面進行無電解鎳各金 面上。 ,之異常析出發生在屬於基底之樹脂表 此外 金屬月係以提供具有品質優良職處理面之附有 金屬斂細圖案之基材、 (解決問題之手段),佈線板及半導體裝置為目的。 上述目 的係可藉由下述發明⑴〜⑽而達成 (1)一種附有金屬微細圖案 圖案之至少 置之溝槽中, 在上述金屬微細圖案 之基材,其特徵為,金屬微細 下部被埋入至由樹脂所構成之支撐表面上所設 之至少一部分區域的未與上述屢槽 100121202 201230902 表面接觸之部分,係以鎳-鈀-金鍍敷層覆蓋, 在將上述具有錄-把-金錢敷層之區域中由金屬微細圖案 之支樓表面突出的高度設為x(其中,於XS0(零)時,視同 X_0)、將圖案間之最小距離設為Y時之比(X/Y)係未滿0.8。 (2) 如上述(1)之附有金屬微細圖案之基材,其中,上述金 屬微細圖案之具有鎳·鈀-金鍍敷層之區域的線與空間比值 (L/S)為 5〜ΐ〇〇Απι/5〜1〇〇μηι。 (3) —種印刷佈線板,其特徵為,導體電路之至少下部被 埋入至由核心基板或絕緣層所構成之支撐表面上所設置之 溝槽中, 在上述導體電路之至少—部分區域的未與上述溝槽表面 接觸之部分’仙H金鍍敷層覆蓋, 在將上述具有鎳I金錢敷層之區域中由導體電路之支 撑表面突出的高度設為取中,於X轉)時,視同 Χ-0)、將電路圖案間之最小距離設為γ時之比(蕭)係未 滿 0.8 0 板,其中,上述導體電路之具有 域的線與空間比值(L/S)為 (4)如上述(3)之印刷佈線 錄-1巴-金鑛敷層之區 5〜100jUm/5〜lOOjum。 ⑸如上述(3)或(4)之⑽,0,ϋ 具有錄I金雜層之區域,係形成端子之 電路之 ⑹-種半導《置,料徵為,在 V )之印刷佈線板 100121202 201230902 上搭載半導體元件,將該印刷佈線板之端子與半導體元件 之輸出/輸入部予以連接。 (7) —種附有金屬微細圖案之基材之製造方法,其特徵為 包含:準備將金屬微細圖案之至少下部埋入至由樹脂所構 成之支撐表面上所設置之溝槽中而成之處理用基材的步 驟; 針對在上述處理用基材之金屬微細圖案之至少一部分區 域的未與上述溝槽表面接觸之部分,進行無電解鎳-鈀-金 鍍敷之步驟; 在將於上述金屬微細圖案之進行無電解鎳-鈀-金鍍敷之 區域中由支撐表面突出的高度設為X(其中,於XS0(零) 時,視同X=0)、將圖案間之最小距離設為Y時之比(X/Y) 係未滿0.8。 (8) 如上述(7)之附有金屬微細圖案之基材之製造方法,其 中,上述金屬微細圖案之進行無電解鎳-鈀-金鍍敷之區域 的線與空間比值(L/S)為5〜100/xm/5〜ΙΟΟμηι。 (9) 如上述(7)或(8)之附有金屬微細圖案之基材之製造方 法,其中,在上述準備處理用基材之步驟中,利用雷射於 處理用基材之支撐表面上形成溝槽,並使金屬堆積在該溝 槽,以形成金屬微細圖案。 (10) 如上述(7)或(8)之附有金屬微細圖案之基材之製造方 法,其中,在上述準備處理用基材之步驟中,將金屬微細 100121202 8 201230902 圖案轉印薄片之金屬微細圖案轉印至處理用基材之經加熱 軟化的支撐表商上0 (11) 一種印刷佈線板之製造方法,其特徵為包含:準備將 導體電路之至少下部埋入至由核心基板或絕緣層所構成之 支撐表面上所設置之溝槽中而成之處理用佈線板的步驟; 針對在上述處理用佈線板之導體電路之至少一部分區域 的未與上述溝槽表面接觸之部分,進行無電解鎳-鈀-金鍍 敷之步驟; 在將於上述導體電路之進行無電解鎳-鈀-金鍍敷之區域 中由支撐表面突出的高度設為X(其中,於XS0(零)時,視 同X=0)、將電路圖案間之最小距離設為Y時之比(Χ/γ)係 未滿0 · 8。 (12) 如上述(11)之印刷佈線板之製造方法,其中,上述導 體電路之進行無電解鎳-鈀-金鍍敷之區域的線與空間比值 (L/S)為 5〜100/im/5〜lOOjttm。 (13) 如上述(11)或(12)之印刷佈線板之製造方法,其中, 上述導體電路之進行鎳-鈀-金鍍敷層之區域,為形成端子 之區域。 (14) 如上述(11)至(13)中之任一印刷佈線板之製造方法, 其中,在上述準備處理用佈線板之步驟中,利用雷射於處 理用佈線板之支#表面上形成溝槽,並使金料積在該溝 槽,以形成導體電路。 100121202 201230902 (15)如上述⑼至⑽中之任一印刷佈線板之製造方法, 其中,在上述準備處理用佈線板之步驟中,將導體電路轉 印薄片之導體電路轉印至處理用佈線板之經加熱軟化之支 撐表面上。 (發明效果) 右根據本發明,透過將附有金屬微細圖案之基材之金屬 微細圖案埋入至樹脂表面,並針對所露出之導體電路表面 進行鍍敷處理,則可縮小對於鍍敷浴之導體電路的露出面 積,故可以縮小因為金屬微細圖案之存在而產生之反應活 性場(鍍敷浴之反應活性高的空間)。 又,藉由將金屬微細圖案埋入至樹脂表面,則樹脂表面 之電路凹凸(電路頂上部與樹脂表面之高低差)會變小,故 可提升樹脂表面之洗淨性,並提高鈀觸媒之去除性。 因此,若根據本發明,則可防止附有金屬微細圖案之基 材之金屬微細圖案周圍的金屬異常析出現象。 此外,本發明係為了縮小金屬微細圖案之露出面積,故 將導體電路埋入至樹脂表面,故而沒有需要將金屬微細圖 案之厚度變薄(電路剖面積縮小因此,若根據本發明, 則不僅是可以防止金屬的異常析出,還可以避免信號傳達 速度變得遲缓之問題。 本發明係即便是對於印刷佈線板以外之電子零件的導體 電路表面’亦屬較佳應用,此外,在電子零件以外之各種 100121202 201230902 領域中,對於將樹脂基材上所支撐之金屬微細圖案予以鍵 敷之情形’亦屬於較佳應用’可獲得品質優異之鑛敷面。 【實施方式】Immersion Gold) is a method of electroless nickel-palladium-gold plating, which is a method of replacing gold plating (Immersion Gold) in the electroless gold plating process of electroless nickel-palladium-gold plating (Patent Document υ). The electroless nickel-palladium gold plating method makes it possible to prevent the diffusion of the conductor material in the circuit or the terminal portion, improve the corrosion resistance, prevent nickel oxidation and prevent diffusion. Moreover, the electroless nickel _ the gold-gold deposit method is used. By setting the electroless button to prevent the nickel from being oxidized by gold, the reliability of the lead-free solder joint with a large thermal load can be improved, and even if the thickness of the gold film is not thickened, the diffusion does not occur. 'There is also an advantage that it can be made more cost-effective than the electroless nickel-gold plating method. [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-144188 (Draft of the Invention) Electroless nickel-gold plating method, the above-mentioned electroless recording-push-gold 100121202 < 201230902 clock application method has high connection reliability for high heat load. However, when electroless nickel is applied to the circuit of the printed wiring board I gold plating (four), is Found: in the stage of electroless palladium treatment, this phoenix, _ sub-partial week _ analysis: genus::=:: one even becomes a face-to-face sentence (four) correcting the original = face quality decline ' again, also found: With the miniaturization of the circuit, the adjacent conductors are more accommodating on the surface (4);;; the narrower than the present invention, in order to solve the above problems, the two parts of the resin of the terminal of the printed wiring board are produced. The gold of the branch building == the surface of the body circuit or other surface of the object can be inhibited from being applied to the surface of the gold/side treated object on the gold surface of the electroless nickel. The abnormal precipitation occurs in the resin belonging to the substrate. In addition, the metal month is intended to provide a substrate having a metal-coated fine pattern having a good quality processing surface, a means for solving the problem, a wiring board, and a semiconductor device. The above object is achieved by the following invention (1)~ (10) A substrate in which at least the metal fine pattern is attached, wherein the metal fine pattern substrate is characterized in that the fine metal lower portion is embedded in a support surface made of a resin. Set to The portion of the portion that is not in contact with the surface of the above-mentioned repeating groove 100121202 201230902 is covered with a nickel-palladium-gold plating layer, and is protruded from the surface of the branch of the metal fine pattern in the region having the above-mentioned recording-push-money coating layer. The height is set to x (where XS0 (zero) is treated as X_0), and the ratio (X/Y) when the minimum distance between patterns is set to Y is less than 0.8. (2) As above (1) A substrate having a metal fine pattern, wherein a line-to-space ratio (L/S) of a region of the metal fine pattern having a nickel-palladium-gold plating layer is 5 to ΐ〇〇Απι/5 to 1 〇 (3) A printed wiring board characterized in that at least a lower portion of a conductor circuit is buried in a trench provided on a support surface composed of a core substrate or an insulating layer, at least in the conductor circuit - the portion of the partial region that is not in contact with the surface of the groove is covered with a smudged gold plating layer, and the height of the support surface of the conductor circuit in the region having the nickel I mica layer is set to be taken at X When turning), the same as Χ-0), when the minimum distance between circuit patterns is set to γ (Xiao) is less than 0.80 board, wherein the conductor-circuit has a domain-to-space ratio (L/S) of (4) as in the above (3), the printed wiring record - 1 bar-gold deposit District 5~100jUm/5~lOOjum. (5) As in (3) or (4) above (10), 0, ϋ has a region where the gold layer is recorded, and is a circuit for forming a terminal (6) - a type of semi-conductive "set, material sign, at V" printed wiring board 100121202 201230902 A semiconductor element is mounted thereon, and the terminal of the printed wiring board is connected to the output/input part of the semiconductor element. (7) A method for producing a substrate having a fine metal pattern, comprising: preparing to embed at least a lower portion of the fine metal pattern into a groove provided on a support surface made of a resin a step of treating the substrate; performing an electroless nickel-palladium-gold plating step on a portion of the at least a portion of the metal fine pattern of the processing substrate that is not in contact with the groove surface; The height of the metal fine pattern in the electroless nickel-palladium-gold plating region is set to X by the support surface (where XX0 (zero) is regarded as X=0), and the minimum distance between the patterns is set. The ratio of Y (X/Y) is less than 0.8. (8) The method for producing a substrate having a fine metal pattern as described in the above (7), wherein a line-to-space ratio (L/S) of the region in which the metal fine pattern is subjected to electroless nickel-palladium-gold plating It is 5~100/xm/5~ΙΟΟμηι. (9) The method for producing a substrate having a fine metal pattern according to the above (7) or (8), wherein the step of preparing the substrate for processing is performed by using a laser on a support surface of the substrate for processing A trench is formed and metal is deposited in the trench to form a fine metal pattern. (10) The method for producing a substrate having a fine metal pattern as described in the above (7) or (8), wherein, in the step of preparing the substrate for processing, the metal of the fine metal 100121202 8 201230902 pattern transfer sheet The fine pattern is transferred to the heat-treated support of the substrate for processing. (11) A method of manufacturing a printed wiring board, comprising: preparing to embed at least a lower portion of the conductor circuit into the core substrate or insulating a step of processing the wiring board formed in the trench provided on the support surface formed by the layer; and performing no portion of the portion of the conductor circuit of the processing wiring board that is not in contact with the surface of the trench a step of electrolytic nickel-palladium-gold plating; a height protruding from the support surface in an area where electroless nickel-palladium-gold plating is performed on the conductor circuit described above is set to X (wherein, at XS0 (zero), The ratio (Χ/γ) when X = 0) and the minimum distance between circuit patterns is set to Y is less than 0 · 8. (12) The method for producing a printed wiring board according to the above (11), wherein a line-to-space ratio (L/S) of the electroless nickel-palladium-gold plating region of the conductor circuit is 5 to 100/im. /5~lOOjttm. (13) The method of manufacturing a printed wiring board according to the above (11) or (12), wherein the region of the conductor circuit on which the nickel-palladium-gold plating layer is formed is a region where the terminal is formed. (14) The method of manufacturing a printed wiring board according to any one of the above (11) to (13), wherein, in the step of preparing the wiring board for processing, a laser is formed on a surface of the branch of the processing wiring board A trench is formed and gold is accumulated in the trench to form a conductor circuit. The method of manufacturing a printed wiring board according to any one of the above (9) to (10), wherein, in the step of preparing the wiring board for processing, the conductor circuit of the conductor circuit transfer sheet is transferred to the processing wiring board It is heated and softened on the support surface. (Effect of the Invention) According to the present invention, by embedding a fine metal pattern of a substrate having a metal fine pattern on a surface of a resin and performing a plating treatment on the surface of the exposed conductor circuit, the plating bath can be reduced. Since the exposed area of the conductor circuit is reduced, the reaction field generated by the presence of the fine metal pattern (the space in which the reaction activity of the plating bath is high) can be reduced. Further, by embedding the fine metal pattern on the surface of the resin, the unevenness of the circuit on the surface of the resin (the difference between the top of the circuit and the surface of the resin) is small, so that the surface of the resin can be improved, and the palladium catalyst can be improved. Removal. Therefore, according to the present invention, it is possible to prevent the occurrence of abnormal appearance of metal around the fine metal pattern of the substrate to which the metal fine pattern is attached. Further, in the present invention, in order to reduce the exposed area of the fine metal pattern, the conductor circuit is buried on the surface of the resin, so that it is not necessary to reduce the thickness of the fine metal pattern (the circuit sectional area is reduced, and therefore, according to the present invention, not only It is possible to prevent abnormal precipitation of metal and to avoid the problem that the signal transmission speed becomes sluggish. The present invention is a preferred application even for a conductor circuit surface of an electronic component other than a printed wiring board, and further, besides the electronic component In the field of various types 100121202 201230902, the case where the fine metal pattern supported on the resin substrate is bonded is also a preferable application to obtain a mineral coated surface excellent in quality.
在針對印刷佈線板之導體電路進行無電解鎮备金鐘敷 時,於導體電路周圍引起異常析出之原因係如下I 在針對印刷佈線板之導體電路進行無電解錄备金鑛敷 時,前處理係給予把觸媒至被處理面之後,進行無電解鍵 錄,而於I巴觸媒給予步驟之階段中,在於端子表面上選擇 性地將金屬Pd附著充分量雜態下,麵Pd2+離子完全從 屬於支撐體之樹脂表面去除係屬困難,此係原因之一。可 認為是殘留在樹脂表面之Μ離子係於無電解舰料被 遇原成〇(零)價,該被還原之Pd成為核而使金屬队粒成長。 此外,異常析出局限性發生在導體電路㈣之樹脂表面 的理由係可認為是缝浴之反應活性於端子的附, 鎳係從鎳被膜溶出’而在鎳溶出地點附近 问 大量發生從Ni往Pd之取代(溶曰面處, ⑽W)所致。 (…,脂表面 100121202 尤其是於相互鄰接之導體電路間所夾住的區 是因為屬於導體電路密集的空間,故而鍍敷浴B %為 變得極高。又’可認為是當電路微細化,而導體應活性 距離越小,則導體電路之密集程度越高,故在相^間之 導體電路㈣夹住之該處嘴敷料反應活性= 鄰越接古之 11 201230902 本發明者係發現到藉由將導體電路埋入至樹脂表面,而 可以抑制導體電路周圍之金屬析出,特別是可以抑制於相 互鄰接之導體電路間所夾住之區域的金屬析出。 透過將導體電路埋入至樹脂表面,則因為對於鍍敷浴的 導體電路露出面積縮小,故可使因導體電路之存在所產生 之反應活性場(鍍敷浴之反應活性高的空間)縮小。 又,透過將導體電路埋入至樹脂表面,則因樹脂表面之 電路凹凸(電路頂上部與樹脂表面的高低差)變小,故可提 升樹脂表面之洗淨性,且提高鈀觸媒之去除性。 即便不將導體電路埋入至樹脂表面,亦可藉由使導體電 路的厚度變薄(降低高度),而使對於鍍敷浴的導體電路露 出面積縮小,且可以縮小樹脂表面之電路凹凸,此時,因 為導體電路之橫切面積變小,故電阻增大,會有信號傳達 速度變得遲緩的問題。尤其是當電路越微細化,則此類信 號的傳達速度變得遲緩的問題會越大。 相對於此,本發明為了將導體電路之露出面積縮小,而 將導體電路埋入至樹脂表面,故沒有將導體電路之厚度變 薄的需要。因此,若根據本發明,則不僅是可以防止金屬 之異常析出,還可以避免信號之傳達速度變得遲緩的問題。 又,如上所述,在針對印刷佈線板之導體電路進行無電 解鎳-鈀-金鍍敷時之異常析出係由於導體電路之微細化, 使導體電路間之距離越小而越容易引起,且信號之傳達速 100121202 12 201230902 度也由於導體電路之微細化,使電路之橫切面積變得越小 而越緩慢,本發明係在針對已進行微細化之導體電路進行 無電解鎳-鈀-金鍍敷時,可有效地防止金屬析出,且可以 避免信號之傳達速度變得緩慢的問題。 本發明係對於印刷佈線板以外之電子零件的導體電路表 面亦可以適當應用,甚至於電子零件以外的各種領域中, 亦可以適當應用在於樹脂基材上所支撐之金屬微細圖案進 行鍍敷之情形,可獲得品質良好的鍍敷面。 根據上述發現,而提供下述發明。 本發明之附有金屬微細圖案之基材之特徵為,金屬微細 圖案之至少下部被埋入至由樹脂所構成之支撐表面上所設 置之溝槽中, 在上述金屬微細圖案之至少一部分區域的未與上述溝槽 表面接觸之部分,係以鎳-鈀-金鍍敷層覆蓋, 在將上述具有鎳-鈀-金鍍敷層之區域中由金屬微細圖案 之支撐表面突出的高度設為X(其中,於XS0(零)時,視同 X=0)、將圖案間之最小距離設為Y時之比(X/Y)係未滿0.8。 又,本發明之印刷佈線板之特徵為,導體電路之至少下 部被埋入至由核心基板或絕緣層所構成之支撐表面上所設 置之溝槽中, 在上述導體電路之至少一部分區域的未與上述溝槽表面 接觸之部分,係以鎳-鈀-金鍍敷層覆蓋, 100121202 13 201230902 在將上述具有鎳-鈀-金鍍敷層之區域中由導體電路之支 撐表面突出的高度設為x(其中,於XS0(零)時,視同 x=0)、將電路圖案間之最小距離設為Y時之比(X/Y)係未 滿 0.8。 又,本發明之半導體裝置之特徵為,在上述本發明之印 刷佈線板上搭載半導體元件,將該印刷佈線板之端子與半 導體元件之輸出/輸入部予以連接。 又,本發明之附有金屬微細圖案之基材之製造方法的特 徵為包含:準備將金屬微細圖案之至少下部埋入至由樹脂 所構成之支撐表面上所設置之溝槽中而成之處理用基材的 步驟; 針對在上述處理用基材之金屬微細圖案之至少一部分區 域的未與上述溝槽表面接觸之部分,進行無電解鎳-鈀-金 鍍敷之步驟; 在將於上述金屬微細圖案之進行無電解鎳-鈀-金鍍敷之 區域中由支撐表面突出的高度設為x(其中,於XS0(零) 時,視同x=0)、將圖案間之最小距離設為Y時之比(X/Y) 係未滿0.8。 又,本發明之印刷佈線板之製造方法的特徵為包含:準 備將導體電路之至少下部埋入至由核心基板或絕緣層所構 成之支撐表面上所設置之溝槽中而成之處理用佈線板的步 驟; 100121202 14 201230902 針對在上述處理用佈線板之導體電路之至少一部分區域 的未與上述溝槽表面接觸之部分,進行無電解鎳-鈀-金鍍 敷之步驟; 在將於上述導體電路之進行無電解鎳-鈀-金鍍敷之區域 中由支撐表面突出的高度設為X(其中,於XS0(零)時,視 同X=0)、將導體電路間之最小距離設為Y時之比(X/Y)係 未滿0.8。 以下,以於印刷佈線板之最外層上形成銅電路,並對其 端子區域進行鍍敷之情形為例,說明本發明。 首先,針對印刷佈線板之構造進行說明。 圖1係示意性表示本發明所屬印刷佈線板之一例的橫切 面圖。印刷佈線板1係具有核心基板2,在其兩面上具有 導體電路層。於核心基板2之上面側,係隔著層間絕緣層 4a、4b、4c而依序積層有4層的導體電路層3a、3b、3c、 3d,於其下面側,係隔著層間絕緣層4d、4e、4f而依序積 層有4層的導體電路層5a、5b、5c、5d。導體電路層3a〜3d 及5a〜5d係形成在由核心基板或層間絕緣層所構成之支撐 表面。另外,最外層電路3d係埋入至層間絕緣層4c上所 設置之溝槽中,最外層電路3d以外之導體電路層(3a〜c、 5a〜d)係可埋入至支撐表面或不埋入。上下面之各導體電路 層係透過通孔而層間連接。核心基板上面側之最外層電路 3d係大部分由焊錫阻劑層6所覆蓋,端子區域7係從焊錫 100121202 15 201230902 阻劑層露由 部分係由鎳。:子區域7之最外層電路3<1由溝槽所突出之 外層電略5广金鍍敷層8所覆盘。核心基板下面側之最 係以具有與主機板等連接用之開口部6a之方 式,而被煤处 ,部6a ^劑層6所覆蓋。印刷佈線板1係在從上述 構件出之襯㈣7G±,藉由設置焊錫球等接觸 襯塾部機㈣物連接。上述開口部&係可為於 部7c之。/、垾錫阻劑6之間設置間隙的構造,亦可為襯墊 周H破焊錫_6所覆蓋之構造。圖丨中示有在概 ㈣口1、焊锡阻劑6之間設置間隙之構造的開口部 6a。上 二因:6'係可如上述端子區域7般不包含複數個連接端 6二==成之短路’故上述開口部 其他公知的表面處理方法者。‘、、、電解鎳I金鑛敷,或依據 另外,印刷佈線板丨係於核心基 之積層構造,但是本發Μ制絕緣層 I7刷佈線板並未限定於此, 為僅在如基板料具切_緣狀構造,亦可為不I 有層間絕緣層而僅核心基板之構造。 …八 圖2係將端子區域7之1分放大來看 明之所謂料㈣仙為了料層與電子 = ^域,緣材龍蓋所露出 之電I7b 接點之婦部7&與《部附近 100121202 201230902 圖3係示意性表示圖2之AA剖面,亦即溝槽9與埋入 至該溝槽之端子附近7b的橫切面圖。在層間絕緣層4c上 設置有溝槽9,端子附近7b之下侧部分被埋入至溝槽中。 溝槽9係具有底面9a與側面9b,由該等底面與側面所 構成之溝槽表面係與端子附近7b之下側部分進行接觸。端 子附近7b之上側部分係由溝槽突出,被鎳-鈀-金鍍敷層8 所覆蓋。雖未詳細圖示,所謂錄-把-金鐘敷層係指從鍵敷 處理面側依序積層鎳被膜、鈀被膜、金被膜而成之複合鍍 敷層。 另外,圖3所示電路之剖面圖為長方形,但本發明之印 刷佈線板所具有之電路的剖面圖形狀並未有特別限定,係 以長方形或正方形為佳,亦可為梯形等。 在本發明中之所謂「被埋入」係意指藉由形成金屬微細 圖案之材料而使支撐表面之溝槽被填充著的狀態。然後, 導體電路等之金屬微細圖案被埋入至溝槽的狀態係呈現出 金屬微細圖案與溝槽之圖案一致而相互重疊,且金屬微細 圖案之至少下部陷入至支撐表面中的外觀。 在本發明中,金屬微細圖案之高度(厚度)係可大於溝槽 的深度,可與溝槽深度相等,亦可小於溝槽的深度。此處, 所謂金屬微細圖案之高度(厚度)係指從溝槽底面至金屬微 細圖案之頂上為止的高度,而並非從支撐表面的「突出高 度」。 100121202 17 201230902 所謂金屬微細圖案之高度大於溝槽深度之情形係指圖3 所示狀態。亦即,意指形成金屬微細圖案(此例為端子附近 7b)之材料完全填充到支撐表面(此例為層間絕緣層4c)之溝 槽9,而金屬微細圖案進一步從支撐表面突出之狀態。 又,所謂金屬微細圖案之高度與溝槽深度相等之情形係 指圖4(A)所示狀態。亦即,意指形成金屬微細圖案之材料 將支撐表面之溝槽9完全填充,而金屬微細圖案7b’之頂上 面與支撐表面4c’一致之狀態。與溝槽表面未接觸之部分係 僅為金屬微細圖案7b’之頂上面,也只有該頂上面被鎳-鈀-金鍍敷層8所覆蓋。 又,所謂金屬微細圖案之高度小於溝槽深度之情形係指 圖4(B)所示狀態。亦即,意指形成金屬微細圖案7b’之材 料填充至支撐表面4c’之溝槽的深度中途,而金屬微細圖案 7b’從支撐表面凹陷之狀態。與溝槽表面未接觸之部分係僅 為金屬微細圖案7b’之頂上面,也只有該頂上面被鎳-鈀-金 鍍敷層8所覆蓋。 端子區域7之導體電路之突出高度係為了有效地抑制導 體電路周圍之金屬析出而被限制著。 亦即,本發明係如圖5所示般,係以將具有鎳-把-金鐘 敷層8之區域中由金屬微細圖案7b’之支撐表面4c’所突出 的高度設為X(其中,於XS0(零)時,視同X=〇),將圖案 間之最小距離設為Y時之比(X/Y)為未滿0.8之方式來調整 100121202 18 201230902 =寸_;此處,所謂突出高度X為0之情形係指金屬微細圖 案之尚度與溝槽深度相同之情形(圖4(a))。又,所謂突出 高度X視同為0之情形係指金屬微細圖案之高度小於溝样 深度之情形(圖4⑻)。另外’金屬微細圖案之高度小朽; 槽深度時之實際的突出高度沒有特別限定,較佳『 ,心x<〇,特佳的是也χ<〇。於此,突出高度乂為 負值之情形係意指金屬微細圖案相對於支撐表面為凹陷。 又’所謂圖案間之最小距離指例如圖2所示俯視圖 之情形的話,為以英文字母小寫的乂所示距離,若為圖$ 所示剖面圖之情形的話,為以英文字母大寫的γ所示距 離,亦即’無關電路形狀之電路間的最小距離。例如,電 路形狀為梯形的話,為底面之電路間的距離,電路形狀為 倒梯形的話’為上面之電路間的距離,電路形狀為圓柱形 的話’為電路中央之電路間的距離。 上述印刷佈線板1係因為端子區域7之周圍的樹脂表 面,特別是相互鄰接之電路間所夾住之位置之樹脂表面的 異常析出少,故鍍敷處理面之品質優良,難以引起短路。 因鎳-鈀-金鍍敷所造成之異常析出係導體電路進行微細 化使導體電路間之距離越小而越容易引起,且信號之傳 達速度亦為導體電路進行微細化,使電路之橫切面積越小 而變得越遲緩,若根據本發明,則於導體電路之欲進行無 電解錦•鈀-金鍍敷之區域的線與空間比值(L/s)為 100121202 201230902 5〜ΙΟΟμπι/5〜100/rni之範圍中,可有效地防止金屬析出。又, 本發明為了將導體電路之露出面積縮小,而將導體電路埋 入至樹脂表面,故沒有將導體電路之厚度變薄之必要。因 此,不僅是可以防止金屬的異常析出,亦可以避免信號之 傳達速度變得遲緩的問題。又,導體電路之欲進行無電解 鎳-鈀-金鍍敷之區域的線與空間比值(L/s)較佳為 5〜50Mm/5〜50μηι,更佳為 5〜25μιη/5〜25μιη。 圖6係示意性表示使用上述印刷佈線板i之半導體裝置 單面的橫切面圖。半導《置W係在印刷佈線板1上搭載 有半導體元件11。 印_線板k上面側的最外層電路3(1係以焊锡阻劑層 6覆盍,端子區域係從料阻騎 溝槽所突出之部分係以鎳切職層8覆由蓋^子&域之 半導體元件11係隔著環氧樹脂等晶粒接合材硬化層13 而固定附著在印刷佈線板1之焊錫阻劑層6上。半導體;; 電極襯塾12’此電極概塾12與印刷佈 二之最外層電路的連接端子係藉由金線Μ而連接著。 +導體裝置10之本莫碑 密封材ι5 «封著。胁載侧係藉由環氧樹脂等 元件予以連接之 之其他連接方式 圖6係表示藉由焊線接合而將半導體 例本♦明係亦適用於區域陣列型封裝等 之將端子部分予以鍍金之情形。 100121202 20 201230902 接著,說明製造圖1之印刷佈線板1之方法。首先,準 備進行無電解鎳-鈀-金鍍敷之處理用佈線板。 在印刷佈線板1之情形,作為處理用佈線板,係準備具 有從圖1所示印刷佈線板1欠缺鎳-鈀-金鍍敷層8之構造 的積層體。 此處,所謂製造印刷佈線板時之「處理用佈線板」係成 為進行無電解鎳-鈀-金鍍敷之對象的中間製品,其具有下 述構造:在核心基板之表面或將核心基板上所積層之導體 電路層予以覆蓋的層間絕緣層之表面設置溝槽,將導體電 路之至少下部埋入至該溝槽,使未與導體電路之溝槽表面 接觸之部分的至少一部分區域以可進行鎳-鈀-金鍍敷處理 之方式,而從鍍敷處理環境露出。 又,所謂製造印刷佈線板以外之附有金屬微細圖案之基 材時之「處理用基材」係指具有由樹脂所構成之支禮表面 的基材,其具有將導體電路之至少下部埋入至設置於該支 樓表面之溝槽的構造。另外,此基材係表面由樹脂所構成, 若可以埋入金屬微細圖案的話,則較深部分亦可為由樹脂 以外之材料所構成。 作為形成導體電路層被埋入至層間絕緣層等之由樹脂所 構成之支撐表面的構造之方法,係例如有藉由對由樹脂所 構成之支撐表面進行雷射加工,而形成與導體電路層具有 相同圖案之溝槽,並於將導體層形成在已形成溝槽之支撐 100121202 21 201230902 以去除之方法(雷射 表面後,將溝槽以外之區域的導體層予 溝槽加工法)。 又’其他料财準備將岐目綠之 3=^料電_印薄片與具有蝴_構成之支 :表二之基材’在使上述基材之支標表面力,軟化之狀 P重邊上述轉印薄片,以剝離或溶解等手法將載體薄膜 去除,以轉印導體電路之方法(轉印法)。 作為轉印法之-形態,係有採用感光性之乾式薄膜阻 劑,藉Μ«彡製程,以電解賴之料麵訂形成電 路,並以該制形成有魏之面額熱軟化之狀態 之支撐表面的方式予以積層,於壓製成形後,將鎳箔予以 名虫刻去除之方法。 圖7Α、圖7Β係說明雷射加工之步驟順序的圖。另外, 圖7Α及圖7Β係僅表示印刷佈線板單面之示意圖。以下, 詳細說明透過雷射加工製造處理用佈線板之步驟順序。 首先,關於步驟順序(a),係準備隔著層間絕緣層(4a、4b) 將3層導體電路層(3a、3b、3c)積層於核心基板2之上面側, 將導體電路層5形成於下面側,並將各導體電路層予以層 間連接之積層體。 核心基板係可#用玻璃環氧基板等公知者。往核心基板 上之導體電路層的堆積亦可以採用公知材料,以半添加法 (SAP)等公知方法進行。 100121202 22 201230902 又’準備將絕緣層4c,,積層在載體薄膜16之樹脂薄片。 樹脂薄片亦可以採用可將層間絕緣層予以轉印之公知者。 構成絕緣層4c”之樹脂組成物係以由包含熱硬化性樹脂 之樹脂组成物所構成為佳。藉此,可使樹脂層之耐熱性提 升。 又’上述絕緣層4c”係亦包含玻璃纖維基材等基材。 作為熱硬化性樹脂,係例如可列舉有苯驗紛酿清漆樹 脂、曱盼紛齡清漆樹脂、雙酚A酚醛清漆樹脂等之酚醛清 漆型苯酚樹脂、以未改質之可溶苯酚樹脂、桐油、亞麻油、 核桃油等而經改質之油變性可溶苯酚樹脂等之可溶型苯酚 树月曰等之笨酚樹脂、雙酚A環氧樹脂、雙酚F環氧樹脂、 雙酷E型環氧樹脂、雙紛s型環氧樹脂、雙盼z型環氧樹 脂、雙酚P型環氧樹脂、雙酚M型環氧樹脂等之雙酚型環 氧樹脂、笨_酸清漆型環氧樹脂、,祕清漆環氧樹 脂等之祕清_環氧樹脂、聯苯S環氧龍、聯苯芳燒 基型琢讀脂、芳基伸絲型環氧樹脂、萘型環氧樹脂、 蒽型環氧樹脂、笨氧基型環氧樹脂、二環戊二烯型環氧樹 脂:降_型環氧樹脂、金剛燒型環氧樹脂1型環氣樹 脂等之環氧樹脂、服(尿素)樹脂、三聚氰胺樹脂等之具有 丼裒之树月曰不飽和聚酯樹脂、雙順丁烯二醯亞胺樹脂、 聚醯亞胺樹脂、聚酿賴亞胺樹脂、聚胺基甲酸醋樹脂曰、 二烯丙基輯S旨樹脂、㈣伽、具有苯并啊環之樹月曰旨、 100121202 23 201230902 三。井樹脂、苯并環丁烯樹脂、氰酸_、雙順丁烯二醯 亞胺化合物等。 ”中係以由每氧樹脂、苯盼樹脂、氮酸醋樹脂、雙順 丁烯=醯亞胺化合物及苯并環丁歸樹脂中選出之一種以上 的樹月士旨為佳,特別好的是氰酸酉旨樹脂。藉此,可將樹脂層 之,、、、公脹係數縮小。此外,於樹脂層之電特性(低介電常 數、低介電正接)、機械強度等方面亦優異。 乍為氰’具體係可列舉出齡搭清漆型氰酸酿樹 月曰雙紛A型氰酸g旨樹脂、雙紛E型氛㈣樹脂、四甲基 雙㈣型氰酸_脂等之雙紛型氰酸酿樹脂等。其中,較 佳的疋祕凊漆型氰酸_脂。盼酸清漆型氮酸醋樹脂係 可將樹月曰層之熱膨脹係數縮小,於樹脂層之機械強度、電 特性(低介電常數 '低介電正接)等方面亦優異。 氰酸S旨樹脂之重量平均分子量係沒有特別限定,較佳為 重量平均分子量500〜4,500,特佳為6〇〇〜3,〇〇〇。當重量平 均分子量未滿上述下限值時,有樹脂層硬化物之機械強度 降低之情形,此外,於製作樹脂層時,會產生黏性,而有 產生樹脂之轉印的情形。又,當重量平均分子量超過上述 上限值時,硬化反應會變快,於當作為基板(特別是電路基 板)之情形下,或會產生成形不良,或有層間剝離強度降低 之情形。另外,鼠酸δ旨樹脂專之重量平均分子量係可夢由 例如GPC(凝膠滲透色層分析法,標準物質··聚笨乙烯換算) 100121202 24 201230902 進行測量。 作為雙順丁稀二醯亞胺化合物’並沒有特別限定,係例 如可列舉出4,4,-二苯基曱烷雙順丁烯二醯亞胺、鄰伸苯基 雙順丁烯二醯亞胺、對伸苯基雙順丁晞二醯亞胺、 2,2’-[4-(4-順丁烯二醯亞胺苯氧基)苯基]丙烷、雙_(3_乙基 _5-曱基-4-順丁烯二醯亞胺苯基)曱烷、4_曱基-丨,3-伸苯基雙 順丁烯一醯亞胺、N,N’_伸乙基二順丁烯二醯亞胺、N,N,_ 六亞甲基二順丁烯二醯亞胺等。作為聚順丁烯二醯亞胺, 係了舉出有聚苯基曱烧順丁烯二醯亞胺等。其中,當考廣 j低吸水率等時,以2,r_雙[4_(4_順丁稀二醯亞胺苯氧基) 笨基]丙燒、雙_(3_乙基·5_甲基_4_順丁婦二醯亞胺苯基)甲烷 為佳。 熱硬化性樹脂之含有量係沒有特別限定,以樹脂組成物 1體之5〜50重罝%為佳,以1〇〜4〇重量%為特佳。當含有 量未滿下限料,會_㈣成樹闕的㈣,而當超過 上限值時,則會有樹脂層之強度降低的情形。 熱=樹:=:是_清漆型氣酸醋樹峨為 原子)。 X 4併用環氧樹脂(實質上不含有齒素When the electroless gold plating is applied to the conductor circuit of the printed wiring board, the cause of abnormal precipitation around the conductor circuit is as follows: I. Pretreatment in the case of electroless recording of gold ore for the conductor circuit of the printed wiring board After the catalyst is applied to the treated surface, the electroless key recording is performed, and in the stage of the I bar catalyst administration step, the metal Pd is selectively attached to the surface of the terminal to be sufficiently mixed, and the surface Pd2+ ion is completely It is difficult to remove the resin from the surface of the support, which is one of the reasons. It is considered that the ruthenium ions remaining on the surface of the resin are caused by the ruthenium (zero) price of the electroless ship material, and the reduced Pd becomes a nucleus to grow the metal granules. In addition, the reason why the abnormal precipitation limit occurs on the surface of the resin of the conductor circuit (4) is considered to be that the reaction of the slit bath is active at the terminal, and the nickel is eluted from the nickel film, and a large amount occurs from the Ni to the Pd near the nickel dissolution site. Replacement (dissolved surface, (10) W). (..., the surface of the grease 100121202, especially the area sandwiched between the adjacent conductor circuits, is because the conductor circuit is dense, so the plating bath B% becomes extremely high. Moreover, it can be considered that when the circuit is miniaturized The smaller the active distance of the conductor is, the higher the density of the conductor circuit is. Therefore, the reaction of the mouth dressing at the conductor circuit (4) between the phases is the same as that of the mouth dressing = 2012. The inventor found that By embedding the conductor circuit on the surface of the resin, precipitation of metal around the conductor circuit can be suppressed, and in particular, precipitation of metal in a region sandwiched between the adjacent conductor circuits can be suppressed. The conductor circuit is buried in the resin surface. In addition, since the exposed area of the conductor circuit of the plating bath is reduced, the reaction field generated by the presence of the conductor circuit (the space in which the reaction activity of the plating bath is high) can be reduced. On the surface of the resin, the unevenness of the circuit on the surface of the resin (the difference between the top of the circuit and the surface of the resin) becomes small, so that the cleansing property of the resin surface can be improved, and High palladium catalyst removal. Even if the conductor circuit is not buried in the resin surface, the thickness of the conductor circuit can be reduced (reduced height), so that the exposed area of the conductor circuit for the plating bath is reduced, and When the surface roughness of the resin surface is reduced, the cross-sectional area of the conductor circuit is reduced, so that the resistance is increased and the signal transmission speed is delayed. Especially when the circuit is finer, the signal is transmitted. On the other hand, in order to reduce the exposed area of the conductor circuit, the conductor circuit is buried in the surface of the resin, so that the thickness of the conductor circuit is not required to be thinned. According to the present invention, not only the abnormal precipitation of the metal can be prevented, but also the problem that the signal transmission speed becomes sluggish can be avoided. Further, as described above, the electroless nickel-palladium-gold plating is performed on the conductor circuit of the printed wiring board. The abnormal precipitation during the application is due to the miniaturization of the conductor circuit, and the smaller the distance between the conductor circuits, the easier it is to cause, and the signal transmission speed is 100121202 12 In 201230902, the cross-sectional area of the circuit becomes smaller and slower due to the miniaturization of the conductor circuit. The present invention is effective in performing electroless nickel-palladium-gold plating on the conductor circuit which has been miniaturized. The metal is prevented from being deposited, and the problem that the signal transmission speed becomes slow can be avoided. The present invention is also applicable to the surface of the conductor circuit of the electronic component other than the printed wiring board, and even in various fields other than the electronic component. Appropriate application is carried out in the case where plating is performed on a metal fine pattern supported on a resin substrate, and a plated surface having good quality can be obtained. According to the above findings, the following invention is provided. The substrate of the present invention having a metal fine pattern is provided. Characterizing that at least a lower portion of the fine metal pattern is buried in a groove provided on a support surface composed of a resin, and a portion of at least a portion of the metal fine pattern that is not in contact with the surface of the groove is characterized by Covered by a nickel-palladium-gold plating layer, which is supported by a fine metal pattern in the region having the nickel-palladium-gold plating layer described above. A height of the protruding surface X (wherein, when in XS0 (zero), as if X = 0), the ratio (X / Y) Y when the minimum distance between the pattern lines is less than 0.8 is set. Further, the printed wiring board of the present invention is characterized in that at least a lower portion of the conductor circuit is buried in a groove provided on a support surface composed of a core substrate or an insulating layer, in at least a portion of the conductor circuit The portion in contact with the surface of the groove is covered with a nickel-palladium-gold plating layer, and the height of the support surface of the conductor circuit in the region having the nickel-palladium-gold plating layer is set to 100121202 13 201230902. x (where XS0 (zero) is regarded as x = 0), and the ratio (X/Y) when the minimum distance between circuit patterns is Y is less than 0.8. Further, the semiconductor device of the present invention is characterized in that a semiconductor element is mounted on the printed wiring board of the present invention, and the terminal of the printed wiring board is connected to the output/input portion of the semiconductor element. Moreover, the method for producing a substrate having a metal fine pattern according to the present invention is characterized in that it comprises: preparing to embed at least a lower portion of the fine metal pattern into a groove provided on a support surface made of a resin. a step of using a substrate; performing an electroless nickel-palladium-gold plating step on a portion of at least a portion of the metal fine pattern of the substrate for processing which is not in contact with the surface of the groove; The height of the fine pattern in the region of electroless nickel-palladium-gold plating is set to x by the support surface (where x0 (zero), which is x = 0), and the minimum distance between the patterns is set to The ratio of Y (X/Y) is less than 0.8. Moreover, the method of manufacturing a printed wiring board according to the present invention includes a processing wiring prepared by embedding at least a lower portion of a conductor circuit in a trench provided on a support surface composed of a core substrate or an insulating layer. a step of performing electroless nickel-palladium-gold plating on a portion of at least a portion of a conductor circuit of the processing wiring board that is not in contact with the surface of the trench; In the electroless nickel-palladium-gold plating region of the circuit, the height protruding from the support surface is set to X (where XX0 (zero), which is regarded as X=0), and the minimum distance between the conductor circuits is set to The ratio of Y (X/Y) is less than 0.8. Hereinafter, the present invention will be described by taking a case where a copper circuit is formed on the outermost layer of the printed wiring board and the terminal region is plated. First, the structure of the printed wiring board will be described. Fig. 1 is a cross-sectional view schematically showing an example of a printed wiring board to which the present invention pertains. The printed wiring board 1 has a core substrate 2 and has conductor circuit layers on both sides thereof. On the upper surface side of the core substrate 2, four layers of conductor circuit layers 3a, 3b, 3c, and 3d are sequentially laminated via the interlayer insulating layers 4a, 4b, and 4c, and an interlayer insulating layer 4d is interposed therebetween. 4, 4e, 4f are sequentially laminated with four layers of conductor circuit layers 5a, 5b, 5c, 5d. The conductor circuit layers 3a to 3d and 5a to 5d are formed on a support surface composed of a core substrate or an interlayer insulating layer. Further, the outermost layer circuit 3d is buried in the trench provided on the interlayer insulating layer 4c, and the conductor circuit layers (3a to c, 5a to d) other than the outermost layer circuit 3d can be buried in the support surface or not buried. In. The upper and lower conductor circuit layers are connected to each other through the via holes. The outermost layer circuit 3d on the upper side of the core substrate is mostly covered by the solder resist layer 6, and the terminal region 7 is exposed from the solder 100121202 15 201230902. The outermost layer circuit 3<1 of the sub-area 7 is covered by a groove, and the outer layer of the sub-area 7 is electrically covered with a 5 gold-plated plating layer 8. The lower surface of the core substrate is most preferably covered by the coal portion, the portion 6a, and the opening portion 6a for connection to the main board or the like. The printed wiring board 1 is connected to the lining (4) from the above-mentioned member, and is connected by a contact lining machine (four) such as a solder ball. The above opening portion & can be the portion 7c. / The structure in which the gap is provided between the antimony and tin resists 6 may be a structure in which the spacer H is broken by the solder _6. In the figure, an opening portion 6a having a structure in which a gap is provided between the (four) port 1 and the solder resist 6 is shown. The second two factors: the 6' system can include a plurality of connection terminals as in the terminal region 7 described above. 6 = = short circuit is formed. Therefore, the above-mentioned opening portion is another known surface treatment method. ',,, electrolytic nickel I gold ore, or according to another, the printed wiring board is tied to the core layer of the laminated structure, but the hair insulating layer I7 brush wiring board is not limited thereto, only in the case of substrate material It has a cut-and-edge structure, and may be a structure in which only the core substrate is provided without an interlayer insulating layer. ...8 Figure 2 is to enlarge the terminal area 7 by 1 point to see the so-called material (four) cents for the material layer and the electron = ^ domain, the edge of the material is covered by the electric I7b contact point of the women's 7& and "the neighborhood near 100121202 201230902 Fig. 3 is a cross-sectional view schematically showing the AA cross section of Fig. 2, that is, the groove 9 and the vicinity of the terminal 7b buried in the groove. A trench 9 is provided on the interlayer insulating layer 4c, and a lower portion of the vicinity of the terminal 7b is buried in the trench. The groove 9 has a bottom surface 9a and a side surface 9b, and the groove surface formed by the bottom surface and the side surface comes into contact with the lower side portion of the terminal vicinity 7b. The upper portion of the vicinity 7b near the terminal is protruded by the groove and covered by the nickel-palladium-gold plating layer 8. Though not shown in detail, the "recording-and-golden coating" refers to a composite plating layer in which a nickel film, a palladium film, and a gold film are sequentially laminated from the side of the keying surface. Further, the cross-sectional view of the circuit shown in Fig. 3 is a rectangular shape. However, the cross-sectional shape of the circuit of the printed wiring board of the present invention is not particularly limited, and it is preferably a rectangle or a square, and may be a trapezoid or the like. The term "buried" in the present invention means a state in which the groove of the support surface is filled by forming a material of the fine metal pattern. Then, the state in which the fine metal pattern of the conductor circuit or the like is buried in the groove exhibits an appearance in which the fine pattern of the metal coincides with the pattern of the grooves and overlaps each other, and at least the lower portion of the fine metal pattern sinks into the support surface. In the present invention, the height (thickness) of the fine metal pattern may be greater than the depth of the trench, may be equal to the depth of the trench, or may be smaller than the depth of the trench. Here, the height (thickness) of the metal fine pattern means the height from the bottom surface of the groove to the top of the metal fine pattern, and is not the "highness of protrusion" from the support surface. 100121202 17 201230902 The case where the height of the fine metal pattern is larger than the depth of the groove means the state shown in Fig. 3. That is, it means that the material forming the fine metal pattern (in this case, the vicinity of the terminal 7b) is completely filled into the groove 9 of the support surface (in this case, the interlayer insulating layer 4c), and the fine metal pattern is further protruded from the support surface. Further, the case where the height of the fine metal pattern is equal to the depth of the groove means the state shown in Fig. 4(A). That is, it means that the material forming the fine metal pattern completely fills the groove 9 of the support surface, and the top surface of the fine metal pattern 7b' is in a state of being coincident with the support surface 4c'. The portion which is not in contact with the surface of the groove is only the top surface of the fine metal pattern 7b', and only the top portion is covered by the nickel-palladium-gold plating layer 8. Further, the case where the height of the fine metal pattern is smaller than the depth of the groove means the state shown in Fig. 4(B). That is, it means that the material forming the fine metal pattern 7b' is filled in the middle of the depth of the groove of the support surface 4c', and the metal fine pattern 7b' is recessed from the support surface. The portion which is not in contact with the groove surface is only the top surface of the fine metal pattern 7b', and only the top surface is covered by the nickel-palladium-gold plating layer 8. The protruding height of the conductor circuit of the terminal region 7 is limited in order to effectively suppress metal deposition around the conductor circuit. That is, the present invention is as shown in Fig. 5, in which the height of the support surface 4c' of the metal fine pattern 7b' in the region having the nickel-push-timepiece layer 8 is set to X (where When XS0 (zero), as X = 〇), the ratio of the minimum distance between the patterns is set to Y (X/Y) is less than 0.8 to adjust 100121202 18 201230902 = inch _; here, the so-called The case where the protruding height X is 0 means that the fineness of the fine metal pattern is the same as the groove depth (Fig. 4(a)). Further, the case where the protruding height X is regarded as 0 means that the height of the fine metal pattern is smaller than the depth of the groove (Fig. 4 (8)). Further, the height of the metal fine pattern is small; the actual protrusion height at the groove depth is not particularly limited, and it is preferable that "heart x" is particularly good. Here, the case where the protrusion height 乂 is a negative value means that the metal fine pattern is recessed with respect to the support surface. In addition, the minimum distance between the patterns refers to, for example, the case of the top view shown in Fig. 2, which is the distance indicated by 乂 in lowercase letters of English, and if it is the case of the sectional view shown in Fig. 2, it is γ in uppercase with English letters. Show distance, which is the minimum distance between circuits of irrelevant circuit shape. For example, if the shape of the circuit is trapezoidal, the distance between the circuits on the bottom surface, if the circuit shape is inverted trapezoidal, the distance between the circuits above is 'the distance between the circuits, and the shape of the circuit is cylindrical' is the distance between the circuits in the center of the circuit. In the printed wiring board 1 described above, the resin surface around the terminal region 7 has a small amount of abnormal precipitation on the resin surface at a position sandwiched between circuits adjacent to each other. Therefore, the quality of the plating treatment surface is excellent, and it is difficult to cause a short circuit. The abnormal precipitation conductor circuit due to nickel-palladium-gold plating is miniaturized so that the distance between the conductor circuits is smaller, and the signal transmission speed is also miniaturized by the conductor circuit, so that the circuit is cross-cut. The smaller the area, the more sluggish it is. According to the present invention, the line-to-space ratio (L/s) of the region of the conductor circuit to be subjected to electroless bromine-palladium-gold plating is 100121202 201230902 5~ΙΟΟμπι/5 In the range of ~100/rni, metal precipitation can be effectively prevented. Further, in the present invention, in order to reduce the exposed area of the conductor circuit and embed the conductor circuit on the surface of the resin, it is not necessary to reduce the thickness of the conductor circuit. Therefore, it is possible to prevent not only the abnormal precipitation of the metal but also the problem that the signal transmission speed becomes sluggish. Further, the line-to-space ratio (L/s) of the region of the conductor circuit to be subjected to electroless nickel-palladium-gold plating is preferably 5 to 50 Mm/5 to 50 μm, more preferably 5 to 25 μm to 5 to 25 μm. Fig. 6 is a cross-sectional view schematically showing a single side of a semiconductor device using the above printed wiring board i. The semiconductor device 11 is mounted on the printed wiring board 1 by a semiconductor. The outermost circuit 3 on the upper side of the printed circuit board k (1 is covered with a solder resist layer 6 and the terminal region is protruded from the material resistance riding groove by a nickel cut layer 8 covered by a cover & The semiconductor element 11 of the domain is fixedly attached to the solder resist layer 6 of the printed wiring board 1 via a die bonding material hardened layer 13 such as an epoxy resin. The semiconductor; the electrode pad 12' is an electrode profile 12 and The connection terminals of the outermost circuit of the printed cloth 2 are connected by a gold wire. The conductor of the conductor device 10 is sealed. The side of the load side is connected by components such as epoxy resin. Other connection means Fig. 6 shows a case where the semiconductor portion is applied to a region array type package or the like by means of wire bonding, and the terminal portion is gold plated. 100121202 20 201230902 Next, the manufacture of the printed wiring board of Fig. 1 will be described. First, a wiring board for processing of electroless nickel-palladium-gold plating is prepared. In the case of the printed wiring board 1, the wiring board for processing is prepared to have a defect from the printed wiring board 1 shown in FIG. Lamination of the structure of the nickel-palladium-gold plating layer 8 Here, the "processing wiring board" when manufacturing a printed wiring board is an intermediate product to be subjected to electroless nickel-palladium-gold plating, and has the following structure: on the surface of the core substrate or the core substrate Providing a trench on a surface of the interlayer insulating layer covered by the laminated conductor circuit layer, and embedding at least a lower portion of the conductor circuit into the trench so that at least a portion of a portion of the portion not in contact with the trench surface of the conductor circuit is In the case of the nickel-palladium-gold plating treatment, the "processing substrate" when the substrate having the metal fine pattern other than the printed wiring board is produced is referred to as having a resin. The base material of the ruling surface has a structure in which at least a lower portion of the conductor circuit is buried in a groove provided on a surface of the branch. Further, the surface of the substrate is made of a resin, and if the metal can be buried In the case of a fine pattern, the deeper portion may be made of a material other than a resin. The support made of resin is formed as a conductor circuit layer buried in an interlayer insulating layer or the like. The method of constructing the surface is, for example, performing laser processing on a support surface composed of a resin to form a groove having the same pattern as the conductor circuit layer, and forming the conductor layer on the support having formed the groove 100121202 21 201230902 In the method of removal (after the laser surface, the conductor layer in the area other than the groove is grooved). Also, the other material preparation will be the green color of the green _ constituting the support: the base material of Table 2 is used to transfer the carrier film by removing the surface of the substrate, and softening the shape P to remove the carrier film by peeling or dissolving. The method (transfer method). As a form of the transfer method, a dry film resist using photosensitivity is used, and a circuit is formed by electrolyzing the surface of the material by the process of electrolysis, and the system is formed by the system. The method of laminating the surface of the support surface in the state of thermal softening of the denomination, and removing the nickel foil by the name after the press forming. 7A and 7B are views showing a sequence of steps of laser processing. In addition, FIG. 7A and FIG. 7 are only schematic views showing one side of the printed wiring board. Hereinafter, the procedure of manufacturing a wiring board for processing by laser processing will be described in detail. First, in the step sequence (a), three layers of conductor circuit layers (3a, 3b, 3c) are laminated on the upper surface side of the core substrate 2 via the interlayer insulating layers (4a, 4b), and the conductor circuit layer 5 is formed. On the lower side, each conductor circuit layer is laminated to form a layer. The core substrate is a known one such as a glass epoxy substrate. The deposition of the conductor circuit layer on the core substrate can also be carried out by a known method such as a semi-additive method (SAP) using a known material. 100121202 22 201230902 Further, the insulating layer 4c is prepared to be laminated on the resin sheet of the carrier film 16. A resin sheet can also be used by a known person to transfer an interlayer insulating layer. The resin composition constituting the insulating layer 4c" is preferably composed of a resin composition containing a thermosetting resin. Thereby, the heat resistance of the resin layer can be improved. Further, the above-mentioned insulating layer 4c" also contains glass fibers. A substrate such as a substrate. Examples of the thermosetting resin include a phenolic varnish-type phenol resin, a phenol varnish resin such as a bisphenol A phenol varnish resin, and an unmodified soluble phenol resin and tung oil. , linseed oil, walnut oil, etc., modified oil-denatured soluble phenol resin, etc., soluble phenolic resin such as phenol tree, bisphenol A epoxy resin, bisphenol F epoxy resin, double cool E Epoxy resin, double s-type epoxy resin, double-presence z-type epoxy resin, bisphenol P-type epoxy resin, bisphenol M-type epoxy resin, etc., bisphenol type epoxy resin, stupid-acid varnish type Epoxy resin, secret varnish epoxy resin, etc. _ Epoxy resin, biphenyl S epoxy dragon, biphenyl aryl burning type 琢 reading grease, aryl stretching wire epoxy resin, naphthalene epoxy resin, Epoxy type epoxy resin, stupid epoxy type epoxy resin, dicyclopentadiene type epoxy resin: epoxy resin, clothing such as reduced-type epoxy resin, diamond-fired epoxy resin type 1 epoxy resin Urea resin, melamine resin, etc. , Polyimide resin, poly-imide resin stuffed Lai, said poly amino acid acetate resin, diallyl S series resins purpose, gamma (iv), the tree having a benzo ring months ah said purpose, 100 121 202 23 201 230 902 III. Well resin, benzocyclobutene resin, cyanic acid, bis-cis-butadiene imine compound, and the like. "The medium is preferably one or more selected from the group consisting of an oxygen resin, a benzene resin, a nitrite resin, a bis-butene = quinone compound, and a benzocyclobutane resin. It is a cyanic acid resin, whereby the resin layer can be reduced in the coefficient of expansion, and the resin layer is excellent in electrical properties (low dielectric constant, low dielectric positive connection) and mechanical strength.乍 is cyanide's specific system, such as age-old varnish-type cyanate-branched tree 曰 曰 纷 纷 A type cyanate g resin, double E-type (four) resin, tetramethyl bis (tetra) cyanate _ lipid, etc. Double-type cyanic acid-forming resin, etc. Among them, the preferred lacquer-type cyanate-lipid. The acid varnish-type nitrite resin can reduce the thermal expansion coefficient of the tree layer and the mechanical strength of the resin layer. It is also excellent in electrical properties (low dielectric constant 'low dielectric positive connection), etc. The weight average molecular weight of the cyanic acid S resin is not particularly limited, and is preferably a weight average molecular weight of 500 to 4,500, particularly preferably 6 〇〇. 3, 〇〇〇. When the weight average molecular weight is less than the above lower limit, there is a resin layer cured product In the case where the mechanical strength is lowered, in addition, when the resin layer is formed, the viscosity is generated, and the transfer of the resin occurs. Further, when the weight average molecular weight exceeds the above upper limit, the hardening reaction becomes faster. In the case of a substrate (particularly a circuit substrate), molding failure may occur, or the peeling strength between layers may be lowered. In addition, the weight average molecular weight of the resin for the succinic acid δ is for example, GPC (gel permeation color) The layer analysis method, the standard substance········································· Bis-m-butylene diimide, o-phenyl bis-bis-butylene diimide, p-phenylene bis-butane quinone imine, 2,2'-[4-(4-heptene醯iminophenoxy)phenyl]propane, bis(3-ethyl-5-fluorenyl-4-maleimidophenylene) decane, 4-mercapto-purine, 3-stretch Phenylbis-n-butenyl-imine, N,N'-extended ethyldimethyleneimine, N,N,_hexamethylenedimethyleneimine Etc. As the poly(n-butylene diimide), polyphenyl fluorene-succinimide, etc. are mentioned, wherein when the high water absorption rate of the test is high, 2, r_double [ 4_(4_cis-butyl diimide phenoxy) phenyl]propane, bis-(3_ethyl·5-methyl_4_cis-butanediamine phenyl)methane is preferred. The content of the thermosetting resin is not particularly limited, and is preferably 5 to 50% by weight of the resin composition 1, and particularly preferably 1 to 4% by weight. When the content is less than the lower limit, it will be _ (4) In the case of (4), when the upper limit is exceeded, the strength of the resin layer may be lowered. Heat = tree: =: yes _ varnish type gas vinegar tree 峨 is an atom) X 4 combined epoxy resin (substantially free of dentate
Ζ氧樹腊’係例如可列舉雙齡A %<虱樹脂、雙酚£型 又酚F 壞氧樹f Π _環氧樹赌、雙粉 100121202 衣虱Μ脂、雙酚Μ型環氧樹脂等 25 201230902 之雙紛型環氧樹脂、苯紛祕清漆型環氧樹脂、T齡祕 清漆環氧樹脂等之㈣清漆型環氧樹脂、聯苯型環氧樹 月曰、本二F基型環氧樹脂、聯苯芳燒基型環氧樹脂等之芳 基伸院基型環氧樹脂、萘型環氧樹脂、.葱型環氧樹脂、苯 氧基型環氧樹脂、二環戊二_環氧樹脂、耗稀型環氧 樹脂、金剛烷型環氧樹脂、苐型環氧樹脂等。 作為環氧樹脂’係可單獨使用該等巾之—種,亦可併用 具^異重量平均分子量之兩種以上,或可為_種或兩種 以上與该等之預聚物的併用。 環氧樹脂之含有量錢料靠定,叫缝成物整體 =上議編° #含有量未 之制Γ、Β、’會有减顆樹脂之反應性降低或所得到 4二:降低的情形’而當超過上述上限值時,則 s有低熱祕性、耐熱性下降的情形。 環氣樹脂之重量平约公名 量平均分子量 均分子量未滿上述:為_〜15,_。當重量平 之情形H旦*限值時’會有在樹脂層表面產生黏性 錫耐埶F β 均分子量超過上述上限值時,會有焊 錫耐熱性降低的情形料 :量 聚笨乙===(標準· 100121202 201230902 本發明之構成印刷佈線板之樹脂層的樹脂組成物係可為 含有無機填充材者。可在構成樹脂層之樹脂組成物中含有 之無機填充材的平均粒徑係以〇·〇5μιη以上且〇.5μιη以下為 佳。藉此,可形成為絕緣可靠性高且信號應答性優異之微 細佈線。 無機填充材之平均粒徑的測量係例如可藉由雷射繞射散 亂法來進行測量。使無機填充材於水中以超音波進行分 散’藉由雷射繞射式粒度分佈測量裝置(H〇RIBA製, LA-500) ’以體積基準作成無機填充材之粒度分佈,將該中 間值徑(D50)當作為平均粒徑而測量。 可於構成樹脂層之樹脂組成物中含有之無機填充材的最 大粒徑係以2·0μιη以下為佳。藉此’可形成為絕緣可靠性 高且信號應答性優異之微細佈線。又,雖沒有特別限定, 但無機填充材之最大粒徑係以1·8μιη以下為更佳,以丨 以下為特佳。藉此,係可有效地顯現出提高絕緣可靠性、 信號應答性之作用。 當可於構成樹脂層之樹脂組成物中含有之無機填充材的 平均粒徑超過上述上限值或無機填充材的最大粒徑超過上 述上限值時,無機填充材會妨礙雷射加工,而會有在樹脂 層產生無法形成溝槽處之情形。甚至因為利用雷射光形成 溝槽之時間變長,故而產生作業性降低之可能性。又,由 於在雷射加工後殘留於溝槽側壁面上之無機填充材,鍍敷 100121202 27 201230902 後之導體層的表〜凸會變大 對於高密度印刷#線板會’佈線之精確度變差, 外,在超過1GHz <高鮮區^緣可靠性之情形。此 損及信號應答性之情形。 ,會有由於表皮效果而 當可於構錢㈣讀_ 平均粒徑未滿上述下限值時,I中3有之無機填充材的 數、彈性率之物理性 e使樹月旨組成物之熱膨脹係 安裝可靠性。 _ %及半導體元件搭載時之 作為可於構成樹月旨層之樹 材,並沒有特別限定,係例如 含有之無機填充 未燒成黏土、雲母、玻璃等切2有滑石、燒成黏土、 二氧化矽、熔融二氧化石夕等夕隹欠现、氧化鈦、氧化鋁、 水滑石等之碳酸鹽、氫氧化鉬、化物、碳酸鈣、碳酸鎂、 氫氧化物、硫酸鋇、硫酸約氣氧化鎮、氫氧化解之 酸鹽、删酸鋅、偏石朋酸鎖、·,酸詞等之硫酸鹽或亞硫 顯鹽、氮化銘、氮化石朋、氮:呂、蝴酸納等之 鈦酸錄、_鋇等之鈦酸鹽等:、氮化碳等之氮化物、 單獨使用其中之-種,亦可以為無機填充材,係可以 熱膨脹性、難燃性及彈性率優:種以上。其中,就低 化石夕’更佳為炫融二氧化石夕。c言’較佳為二氧 球狀二氧化石夕。 以之中,其形狀較佳的是 樹脂薄片之載體薄膜16係具有可將絕緣層4c,,轉印至導 100121202 28 201230902 體電路層上之脫模性。載體薄膜並沒有 使用高分子薄膜或金屬$ ▲、限&,而可以 笨-甲向分子相細彳何採用聚對 本一甲酉欠乙一酉曰、聚對苯二甲酸丁二酉旨等聚 樹脂、聚醯亞胺樹脂等埶 "' '' ::金屬_如可以採用銅及/或銅系合金、::: :金、鐵及/或鐵系合金、銀及/_合金、金及/戍金系 口金、鋅及/或鋅系合金、錄及域 錫车、 合金等之金屬辖等。 t錫及/或錫糸 者載=膜之厚度並沒有特別限定,當使用厚度i。〜鄭m 者,則裝造樹脂薄片時之處理性良好而較佳。 j體薄膜上之絕緣層厚度並沒有特難定,仙丨〜卿m = _佳。樹闕之厚度就提升絕緣可靠 :佳為上述下限值以上’而就達成多層印刷佈線 板之溥膜化而言,較佳為上述上限值以下。 樹脂薄膜之製造方法並沒有特概定,侧如可舉出使 樹脂組成物溶解並分散在溶劑等,以調製樹脂清漆,於使 用各種塗佈裝置將樹脂清漆塗佈至载體薄膜上之後,將該 物乾燥之方法,或使用喷霧裝置將樹月旨清漆喷霧塗佈在載 體薄膜上之後,將該物乾燥之方法等。其中,較佳的是於 採用點狀塗佈機、模式塗佈機等各種塗佈裝置,將樹脂清 漆塗佈在载體薄膜上之後,將該物乾燥之方法。藉此,可 以效率良好地製造具有均勻㈣層厚度之樹腊薄片。 100121202 29 201230902 表體薄膜係可為表面經粗化者,亦可為 =係::如可舉出有藉由__劑進行二 使用研磨機進行物理性粗化之方法等 積=:=_序⑻,係於上述步驟順序(·準備之 後,於步驟順序:;Γ樹腊薄片洲 絕緣層4C。 將載體薄膜予以剝離,而形成層間 層:、、’邑緣層4。之已將載體薄膜剝離側之表面 進订粗化處理。作為 Τ 有⑺使用與層間絕❹/匕處理之方法’係例如可舉出 藉由將_粗2^ 2之接觸面經粗化之載體薄膜, 絕緣層和之表面方以剝離’而將已剝離之層間 4c之接觸面^ 广之方法;(乙)使用與層間絕緣層 膜予以剝離之㈣ 溃處理而進行粗化之Μ ;(^ 聚處理及/或除 透過將該無㈣_無粗化之載體薄膜, 4C,以電聚處理及/或除渣處^"層間絕緣層4G之表面 另外,载體薄膜係在步心:粗化之方法等。 驟::之雷射加工後再予敗;未剝離’而於後述步 4c之表面上形成溝槽9。在 于先Π ’而於層間絕緣層 100121202 田f力口X之際,於最終沿著溝 201230902 槽所形成之導體電路之欲進行鎳_鈀_金鍍敷之區域中,以 如上所述之將由支撐表面之電路所突出之高度X與電路圖 案間之最小距離Y之比(χ/γ)未滿〇·8之方式,調整溝槽之 尺寸、形狀。 又溝槽9係沒有特別限定,較佳為上述溝槽9之深度 幵>成為層間絕緣層4c之厚度的50%以下。 雷射光係以準分子雷射或YAG雷射為佳。藉由使用該等 雷射’而可精確度、形狀良好地形成微細佈線。雖並無特 別限疋但準分子雷射之雷射波長較佳為193nm、308nm、 248nm,特佳為193nm、248m^藉此,可有效地顯現出可 精確度良好且形狀良好地形成微細佈線之作用。YAG雷射 之波長係以355nm為佳。關於其他波長,係有構成層間絕 緣層之樹脂組成物p及收雷射光,而微細佈線未能形成之 接著,在步驟順序(e)中,係於層間絕緣層— 18 ’確㈣㈣狀_路線後,㈣無轉鍍敷在芦門 絕緣層4c表面上形成無電解錢敷層19。 :層間 之金屬種類係沒有特別蚊,較佳為銅和鎳等广敷層19 另外,於形成溝槽9及通孔18德 升密接性之衫步驟。 亦可騎追加用以提 其次,因應需要進行步驟順序(f),形成電解錢敷 電解鍍敷係可使用硫酸銅電解鍍敷。 S 。 100121202 201230902 接著,在步驟順序(g)中,藉由去除溝槽以外之區域的無 電解鍍敷層19及電解鍍敷層20,而僅於溝槽9之部分形 成最外層電路3d。雖沒有特別限定,但去除無電解鍍敷層 19及電解鍍敷層20之方法係以化學蝕刻處理、研磨處理、 拋光研磨處理等為佳。藉此,可有效地僅去除掉樹脂表面 上之無電解鍍敷層19及電解鍍敷層20,而可僅於溝槽9 之部分殘留有導體電路。 然後,於步驟順序(h)中,在最外層電路3d上形成焊錫 阻劑層6,此時從焊錫阻劑層6僅露出端子區域7(未圖示) 之部分,則可獲得處理用佈線板。 經由上述步驟順序(a)至(h)所獲得之處理用佈線板係因 最外層電路中僅端子區域7從焊錫阻劑層露出,故可針對 最外層電路之端子區域選擇性進行無電解鎳-鈀-金鍍敷。 在本發明中,於僅針對導體電路或金屬微細圖案之局部 區域進行無電解鎳-鈀-金鍍敷之情形,除了焊錫阻劑層般 之永久阻劑以外,亦可以使用可溶性阻劑和成形品遮罩等 其他鍍敷處理用遮罩。 圖8係表示無電解鎳-鈀-金鍍敷之步驟順序的方塊圖。 以下,詳細說明上述無電解鎳-鈀-金鍍敷之步驟順序。 於藉由本發明對印刷佈線板之最外層銅電路進行鍵敷 時,作為鈀觸媒給予步驟前之前處理,係可針對該端子部 分因應需要以一個或兩個以上之方法進行表面處理。在圖 100121202 32 201230902 8中’前處理係顯示有清潔劑(Sla)、軟式_(_、酸洗 處理(Sic)、預浸塗(sld),但亦可進行該等以外之處理。 在上述前處理後,可依序進行賴媒之給予、無電解鑛 鎳.、無電解鍍鈀及無電解鍍金,藉以形成有鎳备金 (Ni-Pd-Au)被膜。 關於本發明之無電解錄-纪-金鍍敷方法,亦可以與習知 同樣地進行前處理(S1)、把觸媒給予步驟(S2)、無電解鐘錄 處里(S3)、無電解錢把處理(S4)、無電解錢金處理(μ)。 以下,針對S1〜S5之各處理階段依序進行說明。 <前處理(Si)> (1)清潔劑處理(Sia) 屬於前處理之一的清潔劑處理(s丨a)係藉由使酸性型式 或驗丨生型式之清潔劑液接觸端子表面而進行,藉以謀求自 端子表面去除有機被膜、端子表面之金屬活性化、端子表 面之濕潤性提升。 酉文性型式之清春劑主要係將端子表面之極薄部分予以省虫 刻’而將表面活性化者’作為對銅端子有效者,係可採用 含有羥基羧酸、氨水、食鹽、界面活性劑之溶液(例如,上 村工業(股)之ACL-007)。作為對銅端子有效之其他酸性型 式清潔劑,係也可以使用含有硫酸、界面活性劑、氣化鈉 之溶液(例如,上村工業(股)之ACL-738),此溶液係濕潤性 南0 100121202 33 201230902 鹼性型式之清潔劑 主要係將有機被膜去除者,Examples of the Ζ 树 腊 ' 系 系 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱 虱Resin, etc. 25 201230902 Double-type epoxy resin, benzene secret varnish type epoxy resin, T-age secret varnish epoxy resin, etc. (4) varnish type epoxy resin, biphenyl type epoxy tree moon 曰, this two F base Epoxy resin, biphenyl aryl-based epoxy resin, etc., aryl-based epoxy resin, naphthalene epoxy resin, onion-type epoxy resin, phenoxy epoxy resin, dicyclopentane _ Epoxy resin, thin epoxy resin, adamantane epoxy resin, bismuth epoxy resin, etc. The epoxy resin may be used alone or in combination of two or more kinds of different weight average molecular weights, or may be used in combination with two or more kinds of the prepolymers. The content of epoxy resin is determined by the amount of material, which is called the whole product of the seam = the upper part of the assembly. ##The amount of the product is not 之, Β, 'There will be a decrease in the reactivity of the resin, or the result is reduced. When the above upper limit is exceeded, s has a low heat sensitivity and a low heat resistance. The weight of the epoxy resin is about the nominal name. The average molecular weight The average molecular weight is less than the above: _~15, _. When the weight is flat, the H-denier limit will cause a viscous tin on the surface of the resin layer. When the average molecular weight exceeds the above upper limit, the solder heat resistance may decrease. == (Standard 100121202 201230902 The resin composition of the resin layer constituting the printed wiring board of the present invention may be an inorganic filler. The average particle size of the inorganic filler which can be contained in the resin composition constituting the resin layer It is preferable to use 〇·〇5 μmη or more and 〇5 μmη or less. Thereby, fine wiring having high insulation reliability and excellent signal responsiveness can be formed. The measurement of the average particle diameter of the inorganic filler can be performed by, for example, laser diffraction. The scattering method is used for measurement. The inorganic filler is dispersed by ultrasonic waves in water. 'The laser diffraction type particle size distribution measuring device (manufactured by H〇RIBA, LA-500) is made into an inorganic filler by volume basis. The particle size distribution is measured as the average particle diameter. The maximum particle diameter of the inorganic filler contained in the resin composition constituting the resin layer is preferably 2.0% or less. The fine wiring having high insulation reliability and excellent signal responsiveness is not particularly limited, but the maximum particle diameter of the inorganic filler is preferably 1·8 μm or less, and particularly preferably 丨 or less. The effect of improving the insulation reliability and the signal responsiveness can be effectively exhibited. The average particle diameter of the inorganic filler which can be contained in the resin composition constituting the resin layer exceeds the above upper limit value or the maximum particle diameter of the inorganic filler. When the above-mentioned upper limit is exceeded, the inorganic filler may interfere with the laser processing, and there may be a case where the resin layer cannot form a groove. Even if the time for forming the groove by the laser light becomes long, workability is lowered. Possibility. Moreover, due to the inorganic filler remaining on the sidewall surface of the trench after laser processing, the surface of the conductor layer after plating 100121202 27 201230902 will become larger for the high-density printing #线板The accuracy is worse, in addition, in the case of more than 1 GHz < high fresh area reliability, this will damage the signal responsiveness. There will be a result of the skin effect. When the average particle diameter is less than the above-mentioned lower limit value, the number of the inorganic fillers and the physical property e of the elastic modulus of the three components of I are the reliability of the thermal expansion system of the composition of the tree. The tree material which can form the tree layer is not particularly limited, and is, for example, inorganically filled unfired clay, mica, glass, etc., which has talc, fired clay, cerium oxide, and fused silica. Oxide, etc., carbonate, molybdenum hydroxide, sulphate, calcium carbonate, magnesium carbonate, hydroxide, barium sulfate, sulfuric acid, oxidized acid, acid oxidized acid Salt, zinc sulphate, sulphuric acid, sulphate, sulphate, sulphate, sulphate, nitrite, nitrite, etc. The titanate or the like: a nitride such as carbon nitride or the like, which may be an inorganic filler, may be excellent in thermal expansion property, flame retardancy, and elastic modulus. Among them, it is better to reduce the limestone eve. Preferably, c is 'dioxy spherical sulphur dioxide. Among them, it is preferable that the carrier film 16 of the resin sheet has a mold release property capable of transferring the insulating layer 4c to the circuit layer of the conductor 100121202 28 201230902. The carrier film does not use a polymer film or a metal ▲, a limit &, and can be stupid-to-molecular phase, and a poly-peptidic resin such as a polyethylene terephthalate or a polybutylene terephthalate. Polyimide resin, etc. quot"' '' ::metal _ can be made of copper and / or copper alloy, :::: gold, iron and / or iron alloy, silver and / / alloy, gold and / Sheet metal gold, zinc and/or zinc alloys, metal parts such as tin and alloys, alloys, etc. t tin and/or tin lanthanum = the thickness of the film is not particularly limited, when the thickness i is used. ~ Zheng M, when the resin sheet is installed, the rationality is good and better. The thickness of the insulating layer on the j-body film is not particularly difficult, and the immortal ~ Qing m = _ good. It is preferable that the thickness of the tree raft is improved by the insulation: it is preferably at least the above lower limit value, and it is preferably equal to or less than the above upper limit value in order to achieve the crepe film formation of the multilayer printed wiring board. The method for producing the resin film is not particularly limited, and the resin composition may be prepared by dissolving and dispersing the resin composition in a solvent to prepare a resin varnish, and applying the resin varnish to the carrier film using various coating apparatuses. A method of drying the material or a method of drying the material by spraying a varnish on a carrier film using a spray device. Among them, a method in which a resin varnish is applied onto a carrier film by various coating apparatuses such as a dot coater or a pattern coater, and then the article is dried is preferably used. Thereby, a wax sheet having a uniform (four) layer thickness can be efficiently produced. 100121202 29 201230902 The surface film may be roughened or may be a system: If there is a method of physically roughening with a grinder by __agent, etc. ===_ The order (8) is in the order of the above steps (·after preparation, in the order of steps:; eucalyptus wax thin layer insulation layer 4C. The carrier film is peeled off to form an interlayer layer:, '邑 层 layer 4. The carrier has been The surface of the film peeling side is subjected to a roughening treatment. The method of using (7) and the method of interlaminar/ruthenium treatment is, for example, a carrier film which is roughened by a contact surface of _crude 2^2, and is insulated. a method in which the surface of the layer and the surface thereof are peeled off and the contact surface of the stripped layer 4c is widened; (b) a roughening is performed by using (4) stripping treatment with the interlayer insulating layer film; (^) And or by passing the surface of the carrier film without the (4) _ without roughening, 4C, by electropolymerization and/or slag removal, and on the surface of the interlayer insulating layer 4G, the carrier film is in the step: roughening Method, etc. Step:: After laser processing, it is defeated; it is not peeled off and is formed on the surface of step 4c described later. The trench 9 is in the region of the interlayer insulating layer 100121202, and in the region where the conductor circuit formed in the trench 201230902 is finally subjected to nickel-palladium-gold plating, As described above, the ratio (χ/γ) of the height X protruding from the circuit of the support surface to the minimum distance Y between the circuit patterns is less than 〇8, and the size and shape of the groove are adjusted. It is preferable that the depth 幵 of the trench 9 is 50% or less of the thickness of the interlayer insulating layer 4c. The laser light is preferably a pseudo-molecular laser or a YAG laser. By using the laser light. 'The fine wiring can be formed with high precision and shape. Although it is not particularly limited, the laser wavelength of the excimer laser is preferably 193 nm, 308 nm, 248 nm, particularly preferably 193 nm, 248 m^, which is effective. The effect of forming a fine wiring with good accuracy and good shape is exhibited. The wavelength of the YAG laser is preferably 355 nm. The other wavelengths include a resin composition p constituting the interlayer insulating layer and laser light, and fine wiring. Failing to form next, in step sequence (e) , after the interlayer insulation layer - 18 'definitely (four) (four) shape _ route, (4) no transfer plating on the surface of the reed insulation layer 4c to form an electroless gold layer 19. The metal type between the layers is no special mosquito, preferably The coating layer 19 such as copper and nickel is additionally formed in the step of forming the groove 9 and the through hole 18, and it is also possible to add the second step for the second step, and the step sequence (f) is required to form the electrolytic money coating electrolysis. The plating system can be electrolytically plated with copper sulfate. S. 100121202 201230902 Next, in the step sequence (g), the electroless plating layer 19 and the electrolytic plating layer 20 in the region other than the trench are removed, and only A portion of the trench 9 forms the outermost layer circuit 3d. Although it is not particularly limited, the method of removing the electroless plating layer 19 and the electrolytic plating layer 20 is preferably a chemical etching treatment, a polishing treatment, a polishing treatment, or the like. Thereby, only the electroless plating layer 19 and the electrolytic plating layer 20 on the surface of the resin can be effectively removed, and the conductor circuit can remain only in the portion of the trench 9. Then, in the step sequence (h), the solder resist layer 6 is formed on the outermost layer circuit 3d, and at this time, only the portion of the terminal region 7 (not shown) is exposed from the solder resist layer 6, and the wiring for processing can be obtained. board. The wiring board for processing obtained through the above-described step sequences (a) to (h) is exposed from the solder resist layer only in the terminal region 7 of the outermost layer circuit, so that the electroless nickel can be selectively selected for the terminal region of the outermost circuit. - Palladium-gold plating. In the present invention, in the case of performing electroless nickel-palladium-gold plating only for a partial region of a conductor circuit or a fine metal pattern, a soluble resist and a shape may be used in addition to a permanent resist as a solder resist layer. Other masks for plating treatment such as product masks. Fig. 8 is a block diagram showing the sequence of steps of electroless nickel-palladium-gold plating. Hereinafter, the procedure of the above electroless nickel-palladium-gold plating will be described in detail. When the outermost layer copper circuit of the printed wiring board is bonded by the present invention, the surface treatment can be performed by one or two or more methods for the terminal portion as needed before the step of applying the palladium catalyst. In the figure 100121202 32 201230902 8, the 'pre-treatment system shows a detergent (Sla), a soft type (S_, a pickling treatment (Sic), a pre-dip coating (sld), but may be processed other than the above. After the pretreatment, the donor, the electroless nickel plating, the electroless palladium plating, and the electroless gold plating may be sequentially performed to form a nickel-prepared gold (Ni-Pd-Au) film. - the gold-plating method, the pretreatment (S1), the catalyst application step (S2), the electroless recording (S3), the electroless treatment (S4), Electrolytic gold treatment (μ). Hereinafter, the respective processing stages of S1 to S5 will be described in order. <Pre-treatment (Si)> (1) Detergent treatment (Sia) Detergent which is one of the pre-treatments The treatment (s丨a) is carried out by contacting the acid type or the cleaning type detergent liquid on the surface of the terminal, thereby removing the organic film from the surface of the terminal, activating the metal on the surface of the terminal, and improving the wettability of the surface of the terminal. The smear-type type of clearing agent mainly uses the extremely thin part of the terminal surface to be insulted and the surface As a person who is effective for copper terminals, a solution containing a hydroxycarboxylic acid, ammonia water, salt, or a surfactant (for example, ACL-007 of Shangcun Industrial Co., Ltd.) can be used as the other acid which is effective for the copper terminal. For type cleaners, it is also possible to use a solution containing sulfuric acid, a surfactant, and a vaporized sodium (for example, ACL-738 of Shangcun Industrial Co., Ltd.), which is a wetness South 0 100121202 33 201230902 Alkaline type cleaner Mainly to remove organic film,
5饭朕玄除者,作為對銅 界面活性劑、2-乙醇胺、 屬於其他前處理之軟式㈣處理(Slb)係將端子表面之 極薄部分予以侧,㈣求氧切之去除而進行。作為對 銅端子有狀軟式㈣m ’射❹含㈣硫咖與硫酸 之酸性液。 以浸潰、喷霧等方法使上述軟 在進行軟式钮刻處理時, 式勉刻液接觸端子部分後,可進行水洗。 (3) 酸洗處理(Sic) 屬於其他前處理之酸洗處理(slc)係為了從端子表面或 其附近之樹脂表面去除汙斑(銅微粒子)而進行。 作為對銅端子有效之酸洗液,係可使用硫酸。 在進行酸洗處理時,以浸潰、噴霧等方法使上述酸洗液 接觸端子部分後,可進行水洗。 (4) 預浸塗處理(Sid) 屬於其他如處理之預浸塗處理(Sid)係在叙觸媒給予步 驟前,浸潰於與觸媒給予液約略相同濃度之硫酸的處理, 或為可提升端子表面之親水性,而提升相對於觸媒給予液 100121202 34 201230902 中所含有之Pd離子的黏著性,或為可避免往觸媒給予液之 水洗水的流入,而可重複再使用觸媒給予液,或為謀求氧 化膜去除而進行。預浸塗液係可使用硫酸。 在進行預浸塗處理時,將端子部分浸潰在上述預浸塗 液。另外,在預浸塗處理後,不進行水洗。 <鈀觸媒給予步驟(S2)> 使含有Pd2+離子之酸性液(觸媒給予液)接觸端子表面, 透過離子化傾向(Cu+Pd2、Cu2++Pd)而可在端子表面將 Pd2+離子取代為金屬Pd。黏著在端子表面之Pd係作為無電 解鍍敷之觸媒而作用。作為屬於Pd2+離子供應源之鈀鹽, 係可使用硫酸I巴或氣化纪。 硫酸鈀係因吸附力較氣化鈀為弱,容易去除Pd,所以適 合細線形成。對銅端子有效之硫酸鈀系觸媒給予液係可以 使用含有硫酸、鈀鹽及銅鹽之強酸液(例如,上村工業(股) 之KAT-450)和含有羥基羧酸、硫酸及鈀鹽之強酸液(例如, 上村工業(股)之MNK-4)。 另一方面,氯化鈀係因吸附力、取代性強,不易去除Pd, 故在容易引起鍍敷未吸附之條件下進行無電解鍍敷時,可 以獲得防止鍍敷未吸附的效果。 於進行鈀觸媒給予步驟時,以浸潰、喷霧等方法使上述 觸媒給予液接觸到端子部分之後,亦可以進行水洗。 <無電解鍍鎳處理(S3)> 100121202 35 201230902 無電解鍍鎳浴係例如可以使用含有水溶性鎳鹽、還原劑 及錯化劑之鍍敷浴。無電解鍍鎳浴之詳細係例如已記載於 曰本專利特開平8-269726號公報等。 水溶性鎳鹽係使用硫酸鎳、氯化鎳等,其濃度係設在 0.01〜1莫耳/公升左右。 還原劑係使用次亞磷酸、次亞磷酸鈉等次亞磷酸鹽、二 曱基胺硼烷、三曱基胺硼烷、肼等,其濃度係設為0.01〜1 莫耳/公升左右。 作為錯化劑,係使用蘋果酸、琥珀酸、乳酸、擰檬酸等 和其鈉鹽等羧酸類、甘胺酸、精胺酸、亞胺二醋酸、丙胺 酸、麩醯胺酸等胺基酸類,其濃度係設為0.01〜2莫耳/公升 左右。 將此鍍敷浴調整為pH4〜7,在浴溫度40〜90°C左右使用。 於對此鍍敷浴使用次亞磷酸作為還原劑之情形下,在銅端 子表面藉由Pd觸媒進行下一個主要反應,而形成Ni鍍敷 被膜。5 rice cooker, as a copper surfactant, 2-ethanolamine, and other pre-treatment soft (four) treatment (Slb), the extremely thin portion of the terminal surface is side, and (4) oxygen removal is removed. As a copper terminal, it has a soft (four) m' ray containing an acidic liquid containing (iv) sulphur and sulfuric acid. The softening is performed by dipping, spraying, etc., and when the soft buttoning process is performed, the etchant can be washed with water after contacting the terminal portion. (3) Pickling treatment (Sic) The pickling treatment (slc) belonging to other pretreatments is carried out in order to remove stains (copper particles) from the surface of the terminal or the resin surface in the vicinity thereof. As the pickling liquid effective for the copper terminal, sulfuric acid can be used. When the pickling treatment is carried out, the pickling liquid is brought into contact with the terminal portion by dipping, spraying or the like, and then washed with water. (4) Pre-dip coating treatment (Sid) belongs to other treatments such as pre-dip coating treatment (Sid), which is immersed in sulfuric acid of about the same concentration as the catalyst-administered liquid before the step of giving the catalyst, or is The hydrophilicity of the surface of the terminal is raised, and the adhesion to the Pd ions contained in the catalyst-donating liquid 100121202 34 201230902 is increased, or the inflow of the washing water to the catalyst-donating liquid is avoided, and the catalyst can be repeatedly used. The liquid is supplied or removed for the purpose of removing the oxide film. Sulfuric acid can be used as the prepreg coating. When the prepreg treatment is performed, the terminal portion is immersed in the above prepreg coating liquid. In addition, after the prepreg treatment, no water washing was performed. <Palladium catalyst administration step (S2)> An acidic liquid (catalyst-donating solution) containing Pd2+ ions is brought into contact with the surface of the terminal, and Pd2+ can be formed on the surface of the terminal by ionization tendency (Cu+Pd2, Cu2++Pd). The ion is replaced by a metal Pd. The Pd adhered to the surface of the terminal acts as a catalyst for electroless plating. As the palladium salt belonging to the Pd2+ ion supply source, sulfuric acid Ib or gasification can be used. Palladium sulfate is weaker than vaporized palladium and is easy to remove Pd, so it is suitable for fine line formation. As the palladium sulfate-based catalyst-administering liquid system which is effective for the copper terminal, a strong acid liquid containing sulfuric acid, a palladium salt, and a copper salt (for example, KAT-450 of Uemura Industrial Co., Ltd.) and a hydroxycarboxylic acid, sulfuric acid, and palladium salt can be used. Strong acid solution (for example, MNK-4 of Shangcun Industrial Co., Ltd.). On the other hand, since palladium chloride is strongly adsorbed and highly substituted, it is difficult to remove Pd. Therefore, when electroless plating is performed under conditions in which plating is not easily adsorbed, the effect of preventing plating from being adsorbed can be obtained. In the palladium catalyst application step, the catalyst application liquid may be washed with water after being contacted with the terminal portion by dipping, spraying or the like. <Electroless Nickel Plating Treatment (S3)> 100121202 35 201230902 The electroless nickel plating bath may be, for example, a plating bath containing a water-soluble nickel salt, a reducing agent, and a distoring agent. The details of the electroless nickel plating bath are described in, for example, Japanese Laid-Open Patent Publication No. Hei 8-269726. As the water-soluble nickel salt, nickel sulfate, nickel chloride or the like is used, and the concentration thereof is set to about 0.01 to 1 mol/liter. As the reducing agent, hypophosphite such as hypophosphite or sodium hypophosphite, dinonylamine borane, tridecylamine borane, hydrazine or the like is used, and the concentration thereof is set to about 0.01 to 1 mol/liter. As the error-promoting agent, a carboxylic acid such as malic acid, succinic acid, lactic acid, citric acid or the like and a sodium salt thereof, an amine group such as glycine, arginine, imine diacetic acid, alanine or glutamic acid are used. The concentration of the acid is set to about 0.01 to 2 mol/liter. The plating bath was adjusted to pH 4 to 7, and used at a bath temperature of about 40 to 90 °C. In the case where the plating bath uses hypophosphorous acid as a reducing agent, the next main reaction is carried out on the surface of the copper terminal by the Pd catalyst to form a Ni plating film.
Ni2+ + H2P02· + H20 + 2e' ^ Ni + H2P03' + H2 <無電解鍍鈀處理(S4)> 作為無電解鑛纪浴,係例如可使用含有把化合物、錯化 劑、還原劑、不飽和叛酸化合物之鍵敷浴。 I巴化合物係例如可以使用氯化把、硫酸把、醋酸纪、石肖 酸鈀、四胺鈀鹽酸鹽等,其濃度係以鈀為基準,而設在 100121202 36 201230902 0·001〜0.5莫耳/公升左右。 錯化劑係可使用氨水或曱基胺、二曱基胺、亞曱基二胺、 EDTA等胺化合物等,其濃度係設為0.001〜10莫耳/公升左 右。 還原劑係使用次亞填酸、次亞鱗酸納、次亞碟酸錢等次 亞磷酸鹽等,其濃度係設為0.001〜5莫耳/公升左右。 不飽和羰酸化合物係使用丙烯酸、曱基丙烯酸、順丁稀 二酸等不飽和叛酸、該等之酸酐、該等之鈉鹽、錢鹽等鹽、 該等之乙基酯、苯基酯等衍生物等,其濃度係設為0 001〜10 莫耳/公升左右。 將此鍍敷浴調整為pH4〜10,在浴溫度40〜90°C左右使 用。於對此鍍敷浴使用次亞磷酸作為還原劑之情形下,在 銅端子表面(實際為鎳表面)進行下一個主要反應,而形成 Pd鑛敷被膜。Ni2+ + H2P02· + H20 + 2e' ^ Ni + H2P03' + H2 <electroless palladium plating treatment (S4)> As an electroless ore bath, for example, a compound, a distoring agent, a reducing agent, A bond bath of an unsaturated tetamine compound. For the I ba compound, for example, chlorination, sulfuric acid, acetic acid, palladium tartaric acid, tetraamine palladium hydrochloride, etc. may be used, and the concentration thereof is based on palladium, and is set at 100121202 36 201230902 0·001~0.5 Ears / liters or so. As the distoring agent, ammonia water or an amine compound such as mercaptoamine, dinonylamine, decylenediamine or EDTA may be used, and the concentration thereof is set to be about 0.001 to 10 mTorr/liter. The reducing agent is a hypophosphite such as sub-sub-acid, sub-sodium sulfite or sub-Asian acid, and the concentration thereof is set to about 0.001 to 5 m/d. As the unsaturated carboxylic acid compound, unsaturated tracism such as acrylic acid, mercaptoacrylic acid or cis-succinic acid, such acid anhydrides, salts of such sodium salts and money salts, and ethyl esters and phenyl esters thereof are used. Such as derivatives, etc., the concentration is set to about 0 001~10 m / liter. The plating bath was adjusted to pH 4 to 10 and used at a bath temperature of about 40 to 90 °C. In the case where the plating bath uses hypophosphorous acid as a reducing agent, the next main reaction is carried out on the surface of the copper terminal (actually the surface of the nickel) to form a Pd ore coating.
Pd2+ + H2P〇2- + H20 Pd + H2P03' + 2H+ <無電解鍍金處理(S5)> . 作為無電解鍍金浴,係例如可使用含有水溶性金化合 ‘ 物、錯化劑及駿化合物之鑛敷浴。無電解錢金浴之詳細係 例如載於日本專利特開2008-144188號公報等。 水溶性金化合物係例如使用氰化金、氰化金鉀、氰化金 鈉、氰化金銨等氰化金鹽,其濃度以金為基準而設為 0.0001〜1莫耳/公升左右。 100121202 37 201230902 酸、酒 ’、 使用〜酸、硼酸、檸檬酸、葡萄糖 石酸、乳酸、蘋果酿 r _ 、乙二胺、三乙醇胺、乙二胺四醋酸 專、濃度設為0.001〜1莫耳/公升左右。 祕合物(還原_例如使用㈣、乙料脂肪族飽和 盤、乙u二料脂肪H巴豆料脂肪族不飽 和越、苯fm或對_硝基苯甲料芳香鱗、葡萄 糖、半乳糖等具㈣基(领◦)之糖類等,錢度設為 0.0001〜0.5莫耳/公升左右。 將此鐘敷浴凋整為pH5〜1〇,以浴溫度4〇〜9〇它左右使 用。於使用此鍍敷浴之情形下,在銅端子表面(實際上為纪 表面)進行接下來的兩個取代反應,而形成Au鍍敷被膜。 Pd + Au+ Pd2+ + Au + e' e_(藉由Au自觸媒作用,將鍍敷浴中成分予以氧化而獲 得)+ Au+ — AuPd2+ + H2P〇2- + H20 Pd + H2P03' + 2H+ <electroless gold plating treatment (S5)> As an electroless gold plating bath, for example, a water-soluble gold compound, a distorer, and a compound can be used. Mineral bath. The details of the electroless gold bath are described, for example, in Japanese Laid-Open Patent Publication No. 2008-144188. The water-soluble gold compound is, for example, a gold cyanide salt such as gold cyanide, gold potassium cyanide, sodium cyanide or gold ammonium cyanide, and the concentration thereof is set to about 0.0001 to 1 mol/liter on the basis of gold. 100121202 37 201230902 Acid, wine', use ~ acid, boric acid, citric acid, gluconic acid, lactic acid, apple brewed r _, ethylenediamine, triethanolamine, ethylenediaminetetraacetic acid, the concentration is set to 0.001~1 mole / liters around. The secret compound (reduction _ for example, using (4), ethyl alcohol saturated disk, y-di fat H peas, fatty acid unsaturated, benzene fm or p-nitrobenzene, aromatic squama, glucose, galactose, etc. (4) The sugar of the base (collar), etc., the money is set to about 0.0001~0.5 m / liter. The bed is rounded to pH 5~1〇, and the bath temperature is 4〇~9〇. In the case of this plating bath, the next two substitution reactions are performed on the surface of the copper terminal (actually the surface of the surface) to form an Au plating film. Pd + Au + Pd2+ + Au + e' e_ (by Au Catalytic action, obtained by oxidizing the components in the plating bath) + Au+ — Au
另外’關於上述無電解錄-把-金鍍敷,係可在把觸媒給 予步驟(S2)後、無電解鍍鈀處理(S4)進行前之任意階段卡進 行將吸附在樹脂表面之Pd觸媒予以去除之步驟(後浸塗步 驟)。後浸塗步驟係例如有使用KCN,使Pd2+離子與KCN 進行反應’而形成錯離子並當作為觸媒使成為非活性之方 法,或使用酸性液沖洗Pd2+離子之方法等。 經由上述步驟順序,則於印刷佈線板之電路上形成有品 質良好的Ni-Pd-Au魏被膜’且可確保在端子周圍之樹脂 100121202 38 201230902 表面無異常析出之品質良好的鍍數處理面。 將半導體元件絲Μ域料^狀本發明之印刷 佈線板,則可製造連接可靠性高之半導體裝置。 [實施例] 町’ ^出實關践—步詳細㈣本發明,但並非限 定於此。 <實施例1> (試驗片之作成) 使祕清漆型氰酸輯脂(LQnza 股份有限公司 製^nmasetPT-3〇 ’重量平均分子量大約·)2()重量份、 甲氧基奈一亞曱基型環氧樹脂(大曰本油墨化學工業股份 有限公司製’ ΕΧΑ-7320)35重量份、苯氧基樹脂(日本環氧 樹脂公司製,jER4275)5重量份、料化合物(四國化成工 業股份有限公司製,Curezol 1B2PZ(1_¥基_2_苯基味唾肌2 重量份溶解並分散於甲基乙基酉同中。接下來,採用積層型 濾筒(住友3M股份有限公司製)對球狀熔融二氧化矽(電氣 •化學工業股#有限公司»,SFP-20M)冑最大粒徑超過 .2鄭m之粒行叫齡離,使平均粒㈣0如,並添加 40重量份。接著’添加環氧石夕院偶合劑(ge東芝石夕嗣股份 有限公司製’ A_187)G.2重量份’制高速攪拌|置進行擾 摔10分鐘,以調製固形分5〇重量%之樹脂清漆。 使用點狀塗佈裝置以乾燥後之樹脂薄膜厚度為4〇邮之 100121202 39 201230902In addition, regarding the above-mentioned electroless recording-push-gold plating, Pd which is adsorbed on the surface of the resin can be carried out at any stage before the catalyst is given to the step (S2) and before the electroless palladium treatment (S4) is carried out. The step of removing the medium (post-dip coating step). The post-dip coating step is, for example, a method of using KCN to react a Pd2+ ion with KCN to form a counter ion, a method of inactivating it as a catalyst, or a method of rinsing Pd2+ ions with an acidic liquid. Through the above-described sequence of steps, a Ni-Pd-Au film of good quality is formed on the circuit of the printed wiring board, and a plated surface having a good quality in which the surface of the resin 100121202 38 201230902 around the terminal is not abnormally precipitated can be secured. By mounting the semiconductor device in the form of a printed wiring board of the present invention, it is possible to manufacture a semiconductor device having high connection reliability. [Embodiment] The town is hereinafter referred to as the present invention, but is not limited thereto. <Example 1> (Preparation of test piece) A secret varnish type cyanate ester (manufactured by LQnza Co., Ltd.) nmaset PT-3 〇 'weight average molecular weight approximately · 2 parts by weight, methoxynazepine 35 parts by weight of bismuth-based epoxy resin (manufactured by Otsuka Ink Chemical Industry Co., Ltd., ΕΧΑ-7320), phenoxy resin (manufactured by Nippon Epoxy Co., Ltd., jER4275), 5 parts by weight, compound (four countries) Industrial Co., Ltd., Curezol 1B2PZ (1_¥ base_2_phenyl-saliva muscle 2 parts by weight dissolved and dispersed in methyl ethyl oxime. Next, a laminated filter cartridge (Sumitomo 3M Co., Ltd.) ) For the spherical molten cerium oxide (Electrical Chemical Industry Co., Ltd., SFP-20M), the maximum particle size exceeds .2 Zheng m, and the average particle (4) is 0, and 40 parts by weight is added. Then, 'Add Epoxy Stone Xiyuan Coupling Agent (ge _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Resin varnish. Thickness of resin film after drying using a dot coating device 100 121 202 39 201 230 902 4〇 to the Post
•絕緣層.無鹵素之FR-5材, ’厚度0.4mm •導體層.銅箔厚度18μιη,L/s=12〇/18〇/mi,穿通孔 ΙηιιηΦ、3ιηπιΦ,隙縫 2mm 在剝離載體薄膜(PET)後,藉由具有I93nm波長之準分 子雷射對附有樹脂層之基板的樹脂層形成線與空間比值 (L/S)=40/40、目標深度15μιη之溝槽。 將所獲得之積層體在60°C之膨潤液(Atotech Japan股份 有限公司製 ’ Swelling DIP Securiganth P500)浸潰 10 分鐘, 接著於80°C之過錳酸鉀水溶液(Atotech Japan股份有限公 司製,Concentrate Compact CP)中浸潰2〇分鐘後’進行中 和並進行去渣處理。 在經由將之脫脂、觸媒給予、活性化之步驟後’形成無 電解鍵銅層大約〇.2μιη。 其次,將無電解鐘銅層當作為電極,於3A/dm2進行電解 100121202 40 201230902 鑛銅(奥野裝藥工業股份有限公司製,Toplucina 〇〇60分鐘’ 形成從樹脂表層厚度大約20μιη之導體層。 將乾式薄膜阻劑(東京應化工業公司製AR320)予以滚筒 層合至導體層表面,使用既定負式薄膜,進行曝光、顯影, 在導體電路上形成必要的鍍敷阻劑。將圖案狀露出部藉由 閃式蝕刻處理(荏原電產之SAC製程)而去除後,將乾式薄 膜剝離(剝離液··三菱氣體化學製R-100,剝離時間:240 秒鐘)。 接著,使絕緣樹脂層在溫度200°C、60分鐘完全硬化後, 實施電路粗化處理(粗化處理液:美克(股)製CZ8101、1/mi 粗化條件),作成具有線與空間比值(Ι73)=40μιη/40μιη、突 出高度(X)=20/xm、Χ/Υ=0.50之銅電路的試驗片。 (無電解鎳-鈀-金鍍敷步驟(ENEPIG步驟)) 在接下來的步驟順序中,針對上述試驗片進行ENEPIG 步驟’得到實施例1之四層印刷佈線板。 (1) 清潔劑處理 使用上村工業(股)製ACL-007作為清潔液,將上述試驗 片浸潰於液溫50°C的清潔液中5分鐘後,進行水洗3次。 (2) 軟式蝕刻處理 在清潔劑處理後,使用過硫酸鈉與硫酸之混合液作為軟 式蝕刻液,將上述試驗片浸潰於液溫25。(:的軟式蝕刻液中 1分鐘後,進行水洗3次。 100121202 41 201230902 (3) 酸洗處理 於軟式钱刻處理後,將上述試驗片浸潰於液溫25°C的硫 酸中1分鐘後,進行水洗3次。 (4) 預浸塗處理 在酸洗處理後,將上述試驗片浸潰於液溫25。(:的硫酸中 1分鐘。 (5) 把觸媒給予步驟 在預浸塗處理後’為了將鈀觸媒給予到佈線部分,係使 用上村工業(股)製KAT-450作為鈀觸媒給予液。將上述試 驗片浸漬於液溫25。(:的該鈀觸媒給予液中2分鐘後,進行 水洗3次。 (6) 無電解Ni鍍敷處理• Insulation layer. Halogen-free FR-5 material, 'thickness 0.4mm • Conductor layer. Copper foil thickness 18μιη, L/s=12〇/18〇/mi, through-hole ΙηιιηΦ, 3ιηπιΦ, slit 2mm in stripped carrier film ( After PET), a groove having a line-to-space ratio (L/S) = 40/40 and a target depth of 15 μm was formed by a resin layer having a substrate having a resin layer having a pseudo-molecular laser having a wavelength of I93 nm. The obtained laminate was immersed in a swelling liquid at 60 ° C (Swelling DIP Securiganth P500, manufactured by Atotech Japan Co., Ltd.) for 10 minutes, and then a potassium permanganate aqueous solution (manufactured by Atotech Japan Co., Ltd., at 80 ° C, Concentrate Compact CP) After 2 minutes of dipping, 'neutralize and carry out slag treatment. After the step of degreasing, catalyst application, and activation, the formation of an electroless copper layer is about 0.2 μm. Next, an electroless copper layer was used as an electrode, and electrolysis was carried out at 3 A/dm 2 . 100121202 40 201230902 ore (Toplucina 〇〇 60 minutes by Okuno Pharmaceutical Co., Ltd.) to form a conductor layer having a thickness of about 20 μm from the surface layer of the resin. A dry film resist (AR320 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was laminated on the surface of the conductor layer, and a predetermined negative film was used for exposure and development to form a necessary plating resist on the conductor circuit. The part was removed by flash etching (SAC process of Ebara Electric Co., Ltd.), and the dry film was peeled off (removal liquid, Mitsubishi Gas Chemical Co., Ltd., R-100, peeling time: 240 seconds). Next, an insulating resin layer was formed. After the temperature is completely cured at 200 ° C for 60 minutes, the circuit is roughened (roughening treatment liquid: CZ8101, 1/mi coarsening condition), and has a line-to-space ratio (Ι73)=40μιη Test piece of copper circuit of /40μιη, protrusion height (X)=20/xm, Χ/Υ=0.50 (electroless nickel-palladium-gold plating step (ENEPIG step)) In the next step sequence, Above test The sheet was subjected to the ENEPIG step 'to obtain the four-layer printed wiring board of Example 1. (1) The cleaning agent was treated with ACL-007 manufactured by Uemura Industrial Co., Ltd. as a cleaning liquid, and the above test piece was immersed in a liquid temperature of 50 ° C for cleaning. After 5 minutes in the liquid, the mixture was washed three times. (2) Soft etching treatment After the cleaning agent treatment, a mixture of sodium persulfate and sulfuric acid was used as a soft etching solution, and the test piece was immersed at a liquid temperature of 25. (: After 1 minute, the soft etching solution was washed with water three times. 100121202 41 201230902 (3) After the pickling treatment, the test piece was immersed in sulfuric acid at a liquid temperature of 25 ° C for 1 minute, and then subjected to a soft etching treatment. (3) Pre-dip coating treatment After the pickling treatment, the test piece was immersed in a liquid temperature of 25. (1: sulfuric acid for 1 minute. (5) The catalyst application step was performed after the pre-dip coating treatment 'In order to supply a palladium catalyst to the wiring portion, KAT-450 manufactured by Uemura Kogyo Co., Ltd. was used as a palladium catalyst doping liquid. The test piece was immersed in a liquid temperature of 25. (: Palladium catalyst doping liquid 2 After a minute, it was washed 3 times. (6) Electroless Ni plating treatment
35分鐘後, 進行水洗3次。After 35 minutes, it was washed 3 times.
將上述試驗片浸潰於液溫8CTC (7)無電解Pd鍍敷處理 於無電解Ni鍍敷處理之後,The test piece was immersed in a liquid temperature of 8 CTC (7) electroless Pd plating treatment after electroless Ni plating treatment,
(8)無電解Au鍍敷處理 ’將上沭試驗片浸潰於液溫 TPD-30)中 15 分 ’將上述試驗片浸潰於液溫 工業(股)製TWX-40)中18分 於無電解Pd鍍敷處理之後, 80°C之無電解Au鐘敷浴(上村工 100121202 42 201230902 鐘後,進行水洗3次。 <實施例2> 除了 5史為線與空間比值(L/S)=20/>tm/20/mi、突出高度 (Χ)=15μιη、Χ/γ=0·75之外,與實施例1同樣地進行操作, 製作四層印刷佈線板。 <實施例3> 除了设為線與空間比值(L/S)=25jnm/25gm,在電解鐘銅 後’將電解銅蝕刻掉20μιη ’以使突出高度(χ)=〇μηα、X/Y=〇 之外’與實施例1同樣地進行操作,製作四層印刷佈線板。 <實施例4 > 除了設為線與空間比值(L/S)=25/mi/25pm,在電解鏟銅 後,將電解銅蝕刻掉25/mi,以使突出高度(X)<〇Mm(實際 上Χ=-5μιη)、χ/γ=〇之外,與實施例i同樣地進行操作, 製作四層印刷佈線板。 <比較例1> 除了設為線與空間比值(L/S)=25jLtm/25jLtm、突出高度 (Χ)=20μηι、χ/γ=0.8〇之外,與實施例1同樣地進行操作, 製作四層印刷佈線板。 <比較例2> 除了設為線與空間比值(L/S)=25/xm/25jiim、突出高度 (X)=25/xm、χ/γ=1.〇〇之外,與實施例1同樣地進行操作, 製作四層印刷佈線板。 100121202 43 201230902 ▲針對於各實_及啸躺得狀印刷料板進行以下 平估將》f·估項目與内容—起顯示,所獲得之結果示於表 1 ° <異常析出之有無> 透過電子顯微鏡(反射電子影像)觀察印刷佈線板之端子 部分,藉以評估異常析出之有無。 〇:沒有異常析出 △:於電路邊緣有若干異常析出 X:空間整體上有異常析出 <絕緣試驗> 使用導通試驗機(Ηΐοκΐ: χ=yc Hightester 1116)對於實施 例及比較例所得到之印刷佈線板之佈線間的短路有無進行 檢查。 〇:沒有導通 X :有導通 [表1](8) Electroless Au plating treatment 'Immerse the upper test piece in liquid temperature TPD-30) 15 minutes 'The above test piece was immersed in liquid temperature industrial (share) TWX-40) 18 points After the electroless Pd plating treatment, the electroless Au bell bath at 80 ° C (Shang Cun Gong 100121202 42 201230902) was washed 3 times. <Example 2> In addition to the 5 history, the line-to-space ratio (L/S) In the same manner as in the first embodiment, a four-layer printed wiring board was produced in the same manner as in the example 1 except that the height of the protrusions (15) and the protrusion height (Χ) = 15 μm and Χ / γ = 0.75. 3> In addition to setting the line-to-space ratio (L/S) = 25jnm/25gm, after the electrolysis of the copper, the electrolytic copper is etched away by 20 μm to make the protrusion height (χ) = 〇μηα, X/Y = 〇 'Operation was carried out in the same manner as in Example 1 to produce a four-layer printed wiring board. <Example 4 > In addition to the line-to-space ratio (L/S) = 25/mi/25 pm, after the shovel copper was The electrolytic copper was etched away by 25/mi so that the protrusion height (X) < 〇Mm (actually Χ = -5 μιη) and χ / γ = 〇 were operated in the same manner as in the example i to fabricate a four-layer printed wiring. Plate. <Comparative Example 1> A four-layer printed wiring board was produced in the same manner as in Example 1 except that the line-to-space ratio (L/S)=25jLtm/25jLtm, the protrusion height (Χ)=20μηι, and χ/γ=0.8〇. Comparative Example 2> The same as Example 1, except that the line-to-space ratio (L/S)=25/xm/25 jiim, the protrusion height (X)=25/xm, and χ/γ=1. The operation is carried out to produce a four-layer printed wiring board. 100121202 43 201230902 ▲The following flat evaluations are made for each real and smeared printed material board. The results are shown in the "F. Table 1 ° <Presence of abnormal precipitation> The terminal portion of the printed wiring board was observed by an electron microscope (reflected electron image) to evaluate the presence or absence of abnormal precipitation. 〇: No abnormal precipitation was observed Δ: There were some abnormal precipitation at the edge of the circuit X: Abnormal precipitation in the entire space <Insulation test> The presence or absence of a short circuit between the wirings of the printed wiring boards obtained in the examples and the comparative examples was examined using a conduction tester (Ηΐοκΐ: χ=yc Hightester 1116). X : There is conduction [Table 1]
實施例1 實施例2 實施例3 督施例4 比較例1 比較例2 L/S (μπι/μιη) 40/40 20/20 25/25 25/25 25/25 25/25 突出兩度 (X)(nm) 20 15 0 X<〇* 20 25 空間 40 20 25 25 25 25 X/Y 0.50 0.75 0叫 0 0.80 1 1.00 異常析出 〇 Δ 〇 〇 X . X 絕緣試驗 〇 〇 〇 〇 X X *實際之突出高度(X)為-5jum。 100121202 44 201230902 實施例1〜4所獲得之印刷佈線板,佈線間之異常析出係沒 有或較v即便疋在ENEPIG步驟後,亦可保持佈線間之絕 緣m比較m、2所得到之印刷佈線板係可確認 到異常析出,並可確認到佈線間之短路。因此,可知其特徵 為將導體電路埋人到樹脂表面,且該導體電路之由支樓表面 所突出之高度X與電路圖案間之最小距離γ之比(χ/γ)係未 滿0.8之本發明的印刷佈線板係可防止電路周圍之金屬的異 常析出’有效於佈線間之絕緣。 <比較例3> 將於導體電路之欲進行無電解鎳_鈀_金鍍敷之區域的線 與空間比值設為與實施例!相同的4〇μιη/4〇μιη,又,以導 體電路不埋人到樹脂表面,僅存在於樹脂表面上的導體電路 厚度設為20/xm之習知方法所作成之導體電路與實施例】之 導體電路相比較,橫切面積僅有大約6G%,電阻增加約兩倍。 若根據本發明的話,不僅<以防止金屬的異常析出,還可 以避免k號傳達速度遲緩的問題。 【圖式簡單說明】 圖1係示意性表示本發明所屬印刷佈線板之一例的橫切 面圖。 圖2係將印刷佈線板之端子區域局部放大之俯視圖。 圖3係示意性表示圖2之八八剖面的圖。 圖4絲意性表料體電路層埋w狀部分的橫切面 100121202 45 201230902 圖。 圖5係說明金屬微細圖案之由支撐表面所突出之高度X 與圖案間之最小距離Y之關係的概念圖。 圖6係示意性表示本發明所屬半導體裝置之單面的橫切 面圖。 圖7A係說明雷射加工之步驟順序(前半)之單面圖。 圖7B係說明雷射加工之步驟順序(後半)之單面圖。 圖8係表示無電解鎳-鈀-金鍍敷之步驟順序的方塊圖。 【主要元件符號說明】 1 印刷佈線板 2 核心基板 3(3a、3b、3c、3d) 上面側之導體電路層 4(4a、4b、4c、4d、4e、4f) 層間絕緣層 4c’ 支撐表面 4c,, 5(5a、5b、5c、5d) 6 6a 7 7a 7b 7b, 絕緣層 下面側之導體電路層 焊錫阻劑層 開口部 端子區域 襯墊部 襯墊部附近之電路 金屬微細圖案 100121202 46 201230902 7c 襯墊部 8 鎳-妃-金鑛敷層 9 溝槽 9a 底面 9b 側面 10 半導體裝置 11 半導體元件 12 電極襯墊 13 晶粒接合材硬化層 14 金線 15 密封材 16 載體薄膜 17 雷射光 18 通孔 19 無電解鍍敷層 20 X Y y 電解鍍敷層 由金屬微細圖案之支撐表面突出的高度 圖案間之最小距離 圖案間之最小距離 100121202 47Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 L/S (μπι/μιη) 40/40 20/20 25/25 25/25 25/25 25/25 Two degrees of protrusion (X ) (nm) 20 15 0 X<〇* 20 25 Space 40 20 25 25 25 25 X/Y 0.50 0.75 0 is called 0 0.80 1 1.00 Abnormal precipitation 〇Δ 〇〇X . X Insulation test 〇〇〇〇 XX * Actual The protruding height (X) is -5 jum. 100121202 44 201230902 In the printed wiring board obtained in the first to fourth embodiments, the abnormal precipitation between the wirings is not or relatively v. Even after the ENEPIG step, the insulation between the wirings m can be maintained. It is possible to confirm the abnormal precipitation and confirm the short circuit between the wirings. Therefore, it is known that the conductor circuit is buried on the surface of the resin, and the ratio (χ/γ) of the height X of the conductor circuit protruding from the surface of the branch to the minimum distance γ between the circuit patterns is less than 0.8. The printed wiring board of the invention prevents abnormal precipitation of metal around the circuit from being effective for insulation between wirings. <Comparative Example 3> The line-to-space ratio of the region of the conductor circuit where electroless nickel-palladium-gold plating is to be performed is set as an example! The same 4〇μιη/4〇μιη, and the conductor circuit and the embodiment in which the conductor circuit is not buried on the resin surface, and the thickness of the conductor circuit existing only on the surface of the resin is set to 20/xm. Compared to the conductor circuit, the cross-sectional area is only about 6 G%, and the resistance is increased by about two times. According to the present invention, not only the <prevention of abnormal precipitation of metals, but also the problem of slow transmission of the k-number can be avoided. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view schematically showing an example of a printed wiring board to which the present invention pertains. Fig. 2 is a plan view showing a part of a terminal area of a printed wiring board in an enlarged manner. Fig. 3 is a view schematically showing a section taken along line VIII of Fig. 2. Fig. 4 is a cross section of the buried w-shaped portion of the circuit board layer 100121202 45 201230902. Fig. 5 is a conceptual diagram illustrating the relationship between the height X of the metal fine pattern protruding from the support surface and the minimum distance Y between the patterns. Fig. 6 is a cross-sectional view schematically showing one side of a semiconductor device to which the present invention pertains. Fig. 7A is a plan view showing the sequence of the steps (first half) of the laser processing. Fig. 7B is a one-sided view showing the sequence of steps (second half) of the laser processing. Fig. 8 is a block diagram showing the sequence of steps of electroless nickel-palladium-gold plating. [Description of main component symbols] 1 Printed wiring board 2 Core substrate 3 (3a, 3b, 3c, 3d) Conductor circuit layer 4 (4a, 4b, 4c, 4d, 4e, 4f) on the upper side Interlayer insulating layer 4c' Support surface 4c,, 5 (5a, 5b, 5c, 5d) 6 6a 7 7a 7b 7b, conductor circuit layer on the lower side of the insulating layer, solder resist layer opening portion, terminal region, pad metal pad pattern, near the pad metal pad pattern 100121202 46 201230902 7c Pad portion 8 Nickel-bismuth-gold ore deposit 9 Groove 9a Bottom surface 9b Side surface 10 Semiconductor device 11 Semiconductor component 12 Electrode pad 13 Grain bonding material hardened layer 14 Gold wire 15 Sealing material 16 Carrier film 17 Laser light 18 through hole 19 electroless plating layer 20 XY y electrolytic plating layer minimum distance between the height patterns of the height pattern of the metal micro pattern supporting surface 100121202 47
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010141916A JP2012009510A (en) | 2010-06-22 | 2010-06-22 | Base material with metal fine pattern, printed wiring board, and semiconductor device, and method of manufacturing base material with metal fine pattern and printed wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201230902A true TW201230902A (en) | 2012-07-16 |
Family
ID=45429366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100121202A TW201230902A (en) | 2010-06-22 | 2011-06-17 | Substrate with fine metal pattern, print circuit board and semiconductor device; and production method of substrate with fine metal pattern, print circuit board and semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2012009510A (en) |
| KR (1) | KR20110139105A (en) |
| CN (1) | CN102316668A (en) |
| TW (1) | TW201230902A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6013750B2 (en) * | 2011-08-17 | 2016-10-25 | 株式会社 大昌電子 | Printed wiring board and manufacturing method thereof |
| KR101410395B1 (en) * | 2013-01-17 | 2014-06-20 | 한진화학(주) | Method for plating an antenna according to double injection molding |
| KR101484938B1 (en) * | 2014-11-05 | 2015-01-21 | (주)오알켐 | Electroless Copper PLATING METHOD FOR MANUFACTURING MULTI LAYER PCB Using Ion Palladium Catalyst |
| US9881884B2 (en) | 2015-08-14 | 2018-01-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and method for forming the same |
| EP3780916B1 (en) * | 2018-04-12 | 2025-03-05 | Fuji Corporation | Printed substrate forming method, and printed substrate forming device |
| US10622292B2 (en) * | 2018-07-06 | 2020-04-14 | Qualcomm Incorporated | High density interconnects in an embedded trace substrate (ETS) comprising a core layer |
| US11955409B2 (en) | 2021-01-13 | 2024-04-09 | Qualcomm Incorporated | Substrate comprising interconnects in a core layer configured for skew matching |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000058986A (en) * | 1998-08-04 | 2000-02-25 | Matsushita Electric Ind Co Ltd | Wiring board and method of manufacturing the same |
| JP3851320B2 (en) * | 2004-03-25 | 2006-11-29 | Tdk株式会社 | Circuit device and manufacturing method thereof |
| JP4674120B2 (en) * | 2005-06-06 | 2011-04-20 | 京セラSlcテクノロジー株式会社 | Wiring board and manufacturing method thereof |
| JP4747770B2 (en) * | 2005-10-04 | 2011-08-17 | 日立化成工業株式会社 | Method for manufacturing printed wiring board and method for manufacturing semiconductor chip mounting substrate |
| JP5013077B2 (en) * | 2007-04-16 | 2012-08-29 | 上村工業株式会社 | Electroless gold plating method and electronic component |
| JP2010021302A (en) * | 2008-07-10 | 2010-01-28 | Kaneka Corp | Printed wiring board |
-
2010
- 2010-06-22 JP JP2010141916A patent/JP2012009510A/en active Pending
-
2011
- 2011-06-15 KR KR1020110058032A patent/KR20110139105A/en not_active Withdrawn
- 2011-06-17 TW TW100121202A patent/TW201230902A/en unknown
- 2011-06-21 CN CN2011101839778A patent/CN102316668A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110139105A (en) | 2011-12-28 |
| CN102316668A (en) | 2012-01-11 |
| JP2012009510A (en) | 2012-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201230902A (en) | Substrate with fine metal pattern, print circuit board and semiconductor device; and production method of substrate with fine metal pattern, print circuit board and semiconductor device | |
| TW401726B (en) | Multiple layer printing circuit board | |
| JP5461988B2 (en) | Metal laminated polyimide substrate and manufacturing method thereof | |
| TWI304716B (en) | Double-sided wiring board fabrication method, double-sided wiring board, and base material therefor | |
| TW201215265A (en) | A method for manufacturing a base material having gold-coated metallic fine pattern, a base material having gold-coated metallic fine pattern, a printed wiring board, an interposer and a semiconductor device | |
| TW201126619A (en) | Substrate for mounting semiconductor chip and method for producing same | |
| TW201132261A (en) | Printed wiring board and process for producing the same | |
| TW201125458A (en) | Multilayer printed wiring board and method for manufacturing same | |
| TW201106823A (en) | Flexible circuit board and method for manufacturing same | |
| KR20110038457A (en) | Metal wiring structure having electroless nickel plating layer and manufacturing method thereof | |
| TWI387017B (en) | Copper clad laminate for cof and carrier tape for cof | |
| JP2006104504A (en) | Electroless plating pretreatment method and surface metallization method for polyimide resin material, flexible printed wiring board and method for producing the same | |
| JP2003147549A (en) | Nickel-based surface treatment film with excellent heat-resistant adhesion to resin | |
| JP4708920B2 (en) | Method for forming metal plating film on polyimide resin | |
| KR20090119671A (en) | Flexible film and display device including same | |
| KR100953116B1 (en) | Flexible film | |
| JP2013089913A (en) | Substrate for mounting semiconductor chip and manufacturing method thereof | |
| TW453141B (en) | Printed circuit board and its manufacture method | |
| JP2004319918A (en) | Manufacturing method of flexible printed wiring board and flexible printed wiring board obtained by the manufacturing method | |
| JP5691527B2 (en) | Wiring board surface treatment method and wiring board treated by this surface treatment method | |
| KR100798870B1 (en) | Conductive metal-plated polyimide substrate comprising coupling agent and manufacturing method thereof | |
| US20090295684A1 (en) | Flexible film and display device including the same | |
| KR20090123759A (en) | Manufacturing method of flexible film | |
| US20070237969A1 (en) | Surface-metallized polyimide material and method for manufacturing the same | |
| KR101102337B1 (en) | Flexible film |