201238079 六、發明說明： 【發明所屬之技術領威】 [_ι] 本發明係有關於—種發光二極體結構，特別是指一 種可增加發光效率之發光二極體結構。201238079 VI. Description of the Invention: [Technology Leading to the Invention] [_] The present invention relates to a light-emitting diode structure, and more particularly to a light-emitting diode structure which can increase luminous efficiency.
[先前技術]I[Prior Art] I
[0002] 電能為現今不可或缺的能源之一，舉凡照明襞置、 家庭電器、通訊裝置'交通傳輪、或是工業設備等，若 缺乏電能將無法運作。而目前全球的能源多半是利用燃 燒石油或是煤等’而石油或煤並不是取之不盡的，若不 積極的尋找替代能源，等到石油或煤耗盡時，全球將陷 入能源危機。為了因應目前的能源危機，:除了積極開發 各式的再生能源之外’必須鳝約使用能源，並且有效地 提升能源的使用效率。[0002] Electric energy is one of the indispensable energy sources today. For lighting devices, home appliances, communication devices, traffic, or industrial equipment, if there is a lack of power, it will not work. At present, most of the world's energy is using oil or coal. Oil or coal is not inexhaustible. If we do not actively search for alternative energy sources, when the oil or coal is exhausted, the world will fall into the energy crisis. In order to cope with the current energy crisis, in addition to actively developing various types of renewable energy, it is necessary to use energy intensively and effectively improve the efficiency of energy use.
100107448 以照明設備為例，照明設備為人類生活中不可或缺 ，隨著技術的發展’具有更好照度及更省電的照明工具 也逐漸應運而生。目前最常使用的照明光源為發光二極 體。發光二極體（Lig.ht-Emit.ting D.iode，LED)與傳 統光源比較，發光二極體係具有體積小、省電、發光效 率佳、壽命長、操作反應速度快、且無熱輕射與水銀等 有毒物質的污染等優點，因此近幾年來，發光二極體的 應用面已極為廣泛。過去由於發光二極體之亮度還無法 取代傳統之照明光源，但隨著技術領域之不斷提升，目 前已研發出高照明輝度之發光二極體（高功率LED)，其足 以取代傳統之照明先源。 請參閱第一圖，其係為習知技術之發光二極體之結 構示意圖；如圖所示，習知的發光二極體包含一基板12 表單編號A010I 第3頁/共19頁 1002012619-0 201238079 ，一第一半導體層14、一主動層15、一第二半導體層16 與一導電層18，第一半導體層14設於基板丨2上方，主動 層15設於部分第一半導體層14，第二半導體層16設於主 動層15上方，導電層18設於第二半導體層16上方。習知 更包含一第一金屬電極22與一第二金屬電極24，第一金 屬電極22係與n型之第一半導體層14形成歐姆接觸，以連 接至外部電源的負極，第二金屬電極Μ則與ρ型的第二半 導體層16上方之導電層18相連接，而第二金屬電極以連 接至外部電源的正極。 當第一金屬電極22與第二金屬電極24通電時，隨即 產生電流通過第一半導體層14與第二半導體層16之間的 主動層15，而藉由電流致使主動層15發光，而主動層15 所產生之光線將由第二半導體層16上方發散出去。習知 導電層18具有透明及導電的特性，用以將外部供應的電 句勻刀布以避免電流集中產生的能耗，然而，僅靠 第金屬電極22與第二金屬電極24將電流傳遞至第一半 導體層14與第二半導體層16之間，則會有電流分佈不均 勻的現象產生’如此則會影響發光二極體的發光效率。 故針對上述，本㈣提供—種發光二極體結構，其 係不但可讓電流均勾的分佈，並且可提高發光二極體的 發光效率，以解決上述之問題。 【發明内容】 [0003] —、凡’的一禋赞九一梭骽結構，其 路】用複數個第-金屬導線與複數個第二金屬導線以將 ^光:極體的電流平均分佈於第—半導體層主動層與 100107448 表層，以:4力;發光二極體結構之發光效率，並 弟4頁/共19頁 201238079 且藉由複數個絕緣層覆蓋複數個第一金屬導線，以避免 電流集中於第一金屬導線與第二金屬導線之間，讓電流 更均勻的分佈於第一半導體層、主動層與第二半導體層 ’進一步增加發光二極體結構之發光效率。 本發明之發光二極體結構包含一基板、一第一半導 體層、一主動層、一第二半導體層、複數個第一金屬導 線、複數個絕緣層、一透明導電層與複數個第二金屬導 線，第一半導體層設於基板上方，主動層設於第一半導 體層上方，並裸露部分之第一半導體層，第二半導體層 設於主動層上方，主動層典第二半導體層具有複數個凹 槽，複數個第一金屬導線設於第一半導體層上方，並分 別位於複數個凹槽内，複數偭絕緣層設於複數個凹槽内 ，並覆蓋複數個第一金屬導線與第一半導體層，透明導 電層設於第二半導體層上方並覆蓋複數個絕緣層，複數 個第二金屬導線設於透明導電層之上方，並對應第二半 導體層。 本發明藉由第，金屬導線與第二金屬導線以將發光 二極體的電流平均分佈於第—半導體層與第二半導體層 ，以增加發光二極體結構之發光效率，並且藉由絕緣層 覆蓋第-金料線，㈣免電流#巾於第—金屬導線與 第二金屬導線之間，讓電流更均句的分佈於第—半導體 層與第二半導體層，再者，同時也可藉由連續式（〇r全 面式）的透明導電層提供電流更均勻分布於第二半導體 層，進一步增加發光二極體結構之發光效率。 【實施方式】 貴審查委員對本發明之結構特徵及所達成 第5頁/共19頁 1002012619-0 [0004] 茲為使 100107448 表單編號 Α0101 201238079 之功效有更進一步之瞭解與認識，謹佐以較佳之實施例 及配合詳細之說明，說明如後： 請參閱第二A圖、第二B圖及第二C圖，其係本發明較 佳實施例之發光二極體結構之俯視圖、第二A圖之A-A’ 方向剖面圖與第二A圖之B-B’方向剖面圖；如圖所示， 本發明之發光二極體結構至少包含一基板30、一第一半 導體層40、複數個第一金屬導線45、一主動層50、一第 二半導體層60、複數個絕緣層70、一透明導電層80與複 數個第二金屬導線90。第一半導體層40設於基板30上方 ，主動層50設於第一半導體層40上方，並裸露部份之第 一半導體層40。第二半導體層60設於主動層50上方，並 未覆蓋於裸露的第一半導體層40上，如此主動層50與第 二半導體層60具有複數凹槽62。複數個第一金屬導線45 設置於第一半導體層40，並位於複數凹槽62内。複數個 絕緣層70設於複數凹槽62，並覆蓋複數個第一金屬導線 45及裸露的第一半導體層40，本實施例之每一絕緣層70 之頂面與第二半導體層60之頂面位於同一水平面上。透 明導電層80設於第二半導體層60上方並覆蓋複數個絕緣 層70，複數個第二金屬導線90設於透明導電層80之上方 ，並對應第二半導體層60。 本發明藉由第一金屬導線4 5與第二金屬導線90，以 將發光二極體的電流平均分佈於第一半導體層40與第二 半導體層60，以增加發光二極體結構之發光效率，並且 藉由絕緣層70覆蓋第一金屬導線45，以避免電流集中於 第一金屬導線45與第二金屬導線90之間，讓電流更均勻 的分佈於第一半導體層40與第二半導體層60。再者，同 100107448 表單編號A0101 第6頁/共19頁 1002012619-0 201238079 時也可藉由連續式的透明導電層80提供電流更均勻分布 於第二半導體層60 ’進-步增加發光二接體結構之發光 效率。100107448 Taking lighting equipment as an example, lighting equipment is indispensable in human life. With the development of technology, lighting tools with better illumination and more power saving have gradually emerged. The most commonly used illumination source is the light-emitting diode. Light-emitting diode (Lig.ht-Emit.ting D.iode, LED) Compared with traditional light source, the light-emitting diode system has small volume, power saving, good luminous efficiency, long life, fast operation response, and no heat and light. It has the advantages of pollution with toxic substances such as mercury, etc. Therefore, in recent years, the application of light-emitting diodes has been extremely extensive. In the past, the brightness of the light-emitting diodes could not replace the traditional illumination source. However, with the continuous improvement of the technical field, light-emitting diodes (high-power LEDs) with high illumination brightness have been developed, which is enough to replace the traditional illumination. source. Please refer to the first figure, which is a schematic diagram of the structure of the light-emitting diode of the prior art; as shown, the conventional light-emitting diode comprises a substrate 12 Form No. A010I Page 3 / 19 pages 1002012619-0 201238079, a first semiconductor layer 14, an active layer 15, a second semiconductor layer 16, and a conductive layer 18, the first semiconductor layer 14 is disposed above the substrate 丨2, and the active layer 15 is disposed on a portion of the first semiconductor layer 14, The second semiconductor layer 16 is disposed above the active layer 15 and the conductive layer 18 is disposed above the second semiconductor layer 16. The conventional electrode further includes a first metal electrode 22 and a second metal electrode 24, and the first metal electrode 22 is in ohmic contact with the n-type first semiconductor layer 14 to be connected to the negative electrode of the external power source, and the second metal electrode Μ Then, it is connected to the conductive layer 18 above the p-type second semiconductor layer 16, and the second metal electrode is connected to the positive electrode of the external power source. When the first metal electrode 22 and the second metal electrode 24 are energized, a current is generated to pass through the active layer 15 between the first semiconductor layer 14 and the second semiconductor layer 16, and the active layer 15 is caused to emit light by the current, and the active layer The generated light will be diverged from above the second semiconductor layer 16. The conventional conductive layer 18 has a transparent and electrically conductive property for arranging the externally supplied electrosurgical knife to avoid the energy consumption generated by the current concentration. However, only the first metal electrode 22 and the second metal electrode 24 transmit current to the current. Between the first semiconductor layer 14 and the second semiconductor layer 16, there is a phenomenon in which current distribution is uneven. Thus, the luminous efficiency of the light-emitting diode is affected. Therefore, in view of the above, the present (4) provides a light-emitting diode structure, which not only allows the current to be uniformly distributed, but also improves the luminous efficiency of the light-emitting diode to solve the above problems. SUMMARY OF THE INVENTION [0003] -, "A 禋 禋 九 九 九 骽 骽 , 其 其 其 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 】 用 】 用 】 用 用 用 用 用 用The first-semiconductor layer active layer and the 100107448 surface layer are: 4 forces; the luminous efficiency of the light-emitting diode structure, and 4 pages/total 19 pages 201238079, and a plurality of first metal wires are covered by a plurality of insulating layers to avoid The current is concentrated between the first metal wire and the second metal wire, and the current is more evenly distributed in the first semiconductor layer, the active layer and the second semiconductor layer' to further increase the luminous efficiency of the light emitting diode structure. The light emitting diode structure of the present invention comprises a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a plurality of first metal wires, a plurality of insulating layers, a transparent conductive layer and a plurality of second metals The first semiconductor layer is disposed above the substrate, the active layer is disposed above the first semiconductor layer, and the first semiconductor layer is exposed, the second semiconductor layer is disposed above the active layer, and the active semiconductor layer has a plurality of second semiconductor layers a plurality of first metal wires are disposed above the first semiconductor layer and respectively located in the plurality of grooves, and the plurality of insulating layers are disposed in the plurality of grooves and covering the plurality of first metal wires and the first semiconductor The transparent conductive layer is disposed above the second semiconductor layer and covers the plurality of insulating layers. The plurality of second metal wires are disposed above the transparent conductive layer and correspond to the second semiconductor layer. According to the invention, the metal wire and the second metal wire are used to evenly distribute the current of the light emitting diode to the first semiconductor layer and the second semiconductor layer to increase the luminous efficiency of the light emitting diode structure, and the insulating layer is provided. Covering the first-gold wire, (4) the current-free # towel is between the first metal wire and the second metal wire, so that the current is more evenly distributed in the first semiconductor layer and the second semiconductor layer, and at the same time, The current is more uniformly distributed by the continuous (〇r full-scale) transparent conductive layer to the second semiconductor layer, further increasing the luminous efficiency of the light-emitting diode structure. [Embodiment] The reviewer's structural features of the present invention and the achievement of page 5 of 19 pages 1002012619-0 [0004] for the purpose of making 100107448 form number Α 0101 201238079 have a better understanding and understanding, I would like to compare The preferred embodiment and the detailed description are as follows: Please refer to FIG. 2A, FIG. 2B and FIG. 2C, which are top view and second embodiment of the LED structure according to the preferred embodiment of the present invention. A-A' direction cross-sectional view of the figure and B-B' direction cross-sectional view of the second A picture; as shown, the LED structure of the present invention comprises at least a substrate 30, a first semiconductor layer 40, and a plurality A first metal wire 45, an active layer 50, a second semiconductor layer 60, a plurality of insulating layers 70, a transparent conductive layer 80 and a plurality of second metal wires 90. The first semiconductor layer 40 is disposed above the substrate 30. The active layer 50 is disposed over the first semiconductor layer 40 and exposes a portion of the first semiconductor layer 40. The second semiconductor layer 60 is disposed over the active layer 50 and does not cover the exposed first semiconductor layer 40, such that the active layer 50 and the second semiconductor layer 60 have a plurality of recesses 62. A plurality of first metal wires 45 are disposed on the first semiconductor layer 40 and are located in the plurality of grooves 62. A plurality of insulating layers 70 are disposed on the plurality of recesses 62 and cover the plurality of first metal wires 45 and the exposed first semiconductor layer 40. The top surface of each of the insulating layers 70 of the embodiment and the top of the second semiconductor layer 60 The faces are on the same level. The transparent conductive layer 80 is disposed above the second semiconductor layer 60 and covers a plurality of insulating layers 70. The plurality of second metal wires 90 are disposed above the transparent conductive layer 80 and correspond to the second semiconductor layer 60. The present invention uses the first metal wire 45 and the second metal wire 90 to evenly distribute the current of the light emitting diode to the first semiconductor layer 40 and the second semiconductor layer 60 to increase the luminous efficiency of the light emitting diode structure. And covering the first metal wire 45 with the insulating layer 70 to prevent current from being concentrated between the first metal wire 45 and the second metal wire 90, so that the current is more uniformly distributed to the first semiconductor layer 40 and the second semiconductor layer 60. Furthermore, the same as 100107448 Form No. A0101, page 6 / 19 pages, 1002012619-0 201238079, the current can be more evenly distributed in the second semiconductor layer 60 by the continuous transparent conductive layer 80. The luminous efficiency of the body structure.
本發明之基板30可為藍寶石基板3〇，藍寶石基板3〇 具有電氣絕緣性。第一半導體層4〇可為n型半導體層，例 如為η型摻雜之氮化鎵或氮化銦鎵。第二半導體層6〇可為 Ρ型半導體層，例如為ρ型摻雜之氮化鎵或氮化銦鎵。本 發明之發光二極體結構藉由第一半導體層4〇、主動層5〇 與第二半導體層60相結合，使η型半導體層與半導體 層之間的電子電洞對於主動層5〇結合而發光。 本發明之透明導電層80之材料係屬自於鎳/金、氧化 銦錫、氧化鎘錫、氧化銻錫、透明導電笋劑、氡化鋅、The substrate 30 of the present invention may be a sapphire substrate 3, and the sapphire substrate 3 is electrically insulating. The first semiconductor layer 4A may be an n-type semiconductor layer, such as an n-type doped gallium nitride or indium gallium nitride. The second semiconductor layer 6A may be a germanium-type semiconductor layer such as p-type doped gallium nitride or indium gallium nitride. The light emitting diode structure of the present invention is combined with the second semiconductor layer 60 by the first semiconductor layer 4, the active layer 5A, and the electron hole between the n-type semiconductor layer and the semiconductor layer is bonded to the active layer 5? And glow. The material of the transparent conductive layer 80 of the present invention is derived from nickel/gold, indium tin oxide, cadmium tin oxide, antimony tin oxide, transparent conductive bamboo shoots, zinc telluride,
氧化鋅系及上述組任意組合之其中之一者。本實施例之 透明導電層80之材料係以氧化銦錫為例，氧化銦錫具有 透明及導電的特性’因此適合作為電極與半導體層之間 的連接。透明導電層80用以將外部供應的電流均勻分布 ，以避免電流集中產生的能耗。 復參閱第二A圖’本發明更包含至少一第一金屬電極 100與至少一第二金屬電極110，第一金屬電極1〇〇設於 第一半導體層40上方，並與第一金屬導線45相連接。第 二金屬電極110設於透明導電層80上方並與第二金屬導線 90相接設。第一金屬電極100係與第一半導體層4〇並連接 至外部電源之一負極，第二金屬電極110連接第二半導體 層60並連接至外部電源之一正極《當第一金屬電極1〇〇與 第二金屬電極110通電時，電流可經由第一金屬導線45與 第二金屬導線90均勻的分散於第一半導體層4〇、主動層 100107448 表單編號A0101 第7頁/共19頁 1002012619-0 201238079 50與第二半導體層60，以增加發光二極體結構之發光效 率。 此實施例更包含至少一第一金屬連接件1 2 0與至少一 第二金屬連接件130，第一金屬連接件120設於第一半導 體層40並與第一金屬電極100及第一金屬導線45相連接， 第一金屬電極100設於第一金屬導線45與第一金屬連接件 120之相交位置。第二金屬連接件130設於透明導電層80 並與第二金屬電極110及第二金屬導線90相連接，第二金 屬電極110設於第二金屬導線90與第二金屬連接件130之 相交位置。藉由第一金屬連接件120與第二金屬連接件 130可讓電流更為均勻的分佈，如此更可增加發光二極體 結構之發光效率。 此外，第一金屬導線45之末端係對應於第二金屬電 極110，而且第二金屬導線90之末端係對應於第一金屬電 極100，因此電流於導入透明導電層80時，會分佈於第一 金屬導線45之末端與第二金屬電極110之間，亦會分佈於 第二金屬導線90之末端與第一金屬電極100之間。為了更 提升本發明之發光二極體結構的發光效率，因此本發明 以絕緣層70覆蓋第一金屬導線45，絕緣層70之材料包含 二氧化矽、二氧化鈦、三氧化二鋁、五氫化二钽、五氧 化三鈦或是其他絕緣材料，如此可避免電流大量分佈於 第一金屬導線45之末端與第二金屬電極110之間，亦避免 電流大量分佈第二金屬導線90之末端與第一金屬電極100 之間。如此使電流更為均勻的分佈，進一步增加發光二 極體結構之發光效率。 請參閱第三A圖與第三B圖，其係為本發明另一較佳 100107448 表單編號A0101 第8頁/共19頁 1002012619-0 201238079 實％例之發光二極體結構之俯視圖與第三A圖之C-C，方 ’如圖所示’此實施例與上一實施例相較之下 ，此實施例中每一絕緣層70更具有複數個容置槽72，透 月導電層80延伸設置於容置槽72内。如此藉由容置槽72 可讓透明導電層80向下延伸’電流可較為均勻的分散至 第一半導體層6〇，如此更可·增加發光二極體結構之發光 效率。 綜上所述’本發明之發光二極體結構係由第一半導 體層設於基板上，第一金屬導線設於第一半導體層上方 〇 ’主動層及第二半導體層依序設於第一半導體層上方， 主動層與第二半導體層設有複數個凹槽，複數個第一金 屬導線分別位於複數個凹槽内，絕緣層覆蓋第一金屬導 線’透明導電層設於第二半導體層並覆蓋絕緣層，複數 個第二金屬導線設於透明導電層並對應第二半導體層， 以藉由第一金屬導線與第二金屬導線以將電流平均分佈 於第一半導體層與第二半導體層，並且藉/由絕緣層避免 電流集中於第一金屬導線與第二金屬導線之間，而透明 導電層為連續式覆蓋於第二半導體層’以使電流可均勻 分布於第二半導體層，以增加發光二極體結構之發光效 率。 故本發明係實為一具有新穎性、進步性及可供產業 利用者’應符合我國專利法所規定之專利申請要件無疑 ’爱依法提出發明專利申請，祈鈞局早日賜准專利， 至感為禱。 惟以上所述者，僅為本發明之一較佳實施例而已， 並非用來限定本發明實施之範圍’舉凡依本發明申請專 100107448 表單編號A0101 第9頁/共19頁 1002012619-0 201238079 利範圍所述之形狀、構造、特徵及精神所為之均等變化 與修飾，均應包括於本發明之申請專利範圍内。 【圖式簡單說明】 [0005] 100107448 第一圖為習知技術之發光二極體之結構示意圖； 第二A圖為本發明之一較佳實施例之發光二極體結構之俯 視圖； 第二B圖為第二A圖之A-A’方向剖視圖； 第二C圖為第二A圖之B-B’方向剖視圖； 第三A圖為本發明另一較佳實施例之發光二極體結構之俯 視圖；以及 第三B圖為第三A圖之C-C’方向剖視圖。 【主要元件符號說明】 [0006] 12 基板 14 第一半導體層 15 主動層 16 第二半導體層 18 導電層 22 第一金屬電極 24 第二金屬電極 30 基板 40 第一半導體層 45 第一金屬導線 50 主動層 60 第二半導體層 62 凹槽 表單編號A0101 第10頁/共19頁 1002012619-0 201238079 70 絕緣層 72 容置槽 80 透明導電層 90 第二金屬導線 100 第一金屬電極 110 第二金屬電極 120 第一金屬連接件 130 第二金屬連接件Zinc oxide is one of any combination of the above groups. The material of the transparent conductive layer 80 of this embodiment is exemplified by indium tin oxide, which has the characteristics of being transparent and electrically conductive. Therefore, it is suitable as a connection between the electrode and the semiconductor layer. The transparent conductive layer 80 is used to evenly distribute the externally supplied current to avoid the energy consumption generated by the current concentration. Referring to FIG. 2A, the present invention further includes at least one first metal electrode 100 and at least one second metal electrode 110. The first metal electrode 1 is disposed above the first semiconductor layer 40 and is connected to the first metal wire 45. Connected. The second metal electrode 110 is disposed above the transparent conductive layer 80 and is connected to the second metal wire 90. The first metal electrode 100 is connected to the first semiconductor layer 4B and connected to one of the external power sources, and the second metal electrode 110 is connected to the second semiconductor layer 60 and connected to one of the external power sources. When the second metal electrode 110 is energized, the current can be uniformly dispersed in the first semiconductor layer 4 via the first metal wire 45 and the second metal wire 90, and the active layer 100107448. Form No. A0101 Page 7 / 19 pages 1002012619-0 201238079 50 and the second semiconductor layer 60 to increase the luminous efficiency of the light emitting diode structure. The embodiment further includes at least one first metal connector 120 and at least one second metal connector 130. The first metal connector 120 is disposed on the first semiconductor layer 40 and the first metal electrode 100 and the first metal wire. The 45-phase connection is performed, and the first metal electrode 100 is disposed at a position where the first metal wire 45 intersects with the first metal connector 120. The second metal connector 130 is disposed on the transparent conductive layer 80 and connected to the second metal electrode 110 and the second metal wire 90. The second metal electrode 110 is disposed at the intersection of the second metal wire 90 and the second metal connector 130. . The first metal connecting member 120 and the second metal connecting member 130 allow a more uniform distribution of current, which further increases the luminous efficiency of the light emitting diode structure. In addition, the end of the first metal wire 45 corresponds to the second metal electrode 110, and the end of the second metal wire 90 corresponds to the first metal electrode 100, so the current is distributed to the first when the transparent conductive layer 80 is introduced. The end of the metal wire 45 and the second metal electrode 110 are also distributed between the end of the second metal wire 90 and the first metal electrode 100. In order to further improve the luminous efficiency of the light emitting diode structure of the present invention, the present invention covers the first metal wire 45 with an insulating layer 70. The material of the insulating layer 70 comprises ceria, titanium dioxide, aluminum oxide, and pentahydroquinone. And the three-titanium pentoxide or other insulating material, so as to prevent a large amount of current from being distributed between the end of the first metal wire 45 and the second metal electrode 110, and also avoiding a large amount of current distributed between the end of the second metal wire 90 and the first metal. Between the electrodes 100. This makes the current distribution more uniform, further increasing the luminous efficiency of the light-emitting diode structure. Please refer to FIG. 3A and FIG. 3B, which are another preferred 100107448 form number A0101 of the present invention. Page 8/19 pages 1002012619-0 201238079 The top view and the third of the light-emitting diode structure of the actual example CC of the A, as shown in the figure. In this embodiment, in comparison with the previous embodiment, each of the insulating layers 70 further has a plurality of accommodating grooves 72, and the through-the-hole conductive layer 80 is extended. It is accommodated in the slot 72. Thus, the transparent conductive layer 80 can be extended downward by the accommodating groove 72. The current can be more uniformly dispersed to the first semiconductor layer 6 〇, so that the light-emitting efficiency of the light-emitting diode structure can be increased. In summary, the light emitting diode structure of the present invention is provided on the substrate by the first semiconductor layer, and the first metal wire is disposed above the first semiconductor layer, and the active layer and the second semiconductor layer are sequentially disposed on the first layer. Above the semiconductor layer, the active layer and the second semiconductor layer are provided with a plurality of grooves, the plurality of first metal wires are respectively located in the plurality of grooves, and the insulating layer covers the first metal wire, and the transparent conductive layer is disposed on the second semiconductor layer and Covering the insulating layer, a plurality of second metal wires are disposed on the transparent conductive layer and corresponding to the second semiconductor layer to distribute the current evenly over the first semiconductor layer and the second semiconductor layer by the first metal wire and the second metal wire, And by the insulating layer, the current is prevented from being concentrated between the first metal wire and the second metal wire, and the transparent conductive layer is continuously covered on the second semiconductor layer ′ so that the current can be uniformly distributed on the second semiconductor layer to increase Luminous efficiency of the light-emitting diode structure. Therefore, the present invention is a novelty, progressive and available to the industrial users 'should comply with the patent application requirements stipulated in the Chinese Patent Law. It is undoubtedly 'love to file an invention patent according to law, and the prayer bureau will grant the patent as soon as possible. For prayer. However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. The application of the present invention is 100107448. Form No. A0101 Page 9/19 pages 1002012619-0 201238079 Equivalent changes and modifications of the shapes, configurations, features and spirits of the scope are intended to be included in the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS [0005] 100107448 The first figure is a schematic structural view of a light-emitting diode of the prior art; the second A is a top view of the structure of the light-emitting diode according to a preferred embodiment of the present invention; Figure B is a cross-sectional view taken along the line A-A' of the second A; the second C is a cross-sectional view taken along the line B-B' of the second A; the third A is a light emitting diode according to another preferred embodiment of the present invention. A plan view of the structure; and a third B diagram is a cross-sectional view taken along line C-C' of the third A diagram. [Major component symbol description] [0006] 12 substrate 14 first semiconductor layer 15 active layer 16 second semiconductor layer 18 conductive layer 22 first metal electrode 24 second metal electrode 30 substrate 40 first semiconductor layer 45 first metal wire 50 Active layer 60 Second semiconductor layer 62 Groove form number A0101 Page 10 / Total 19 pages 1002012619-0 201238079 70 Insulation layer 72 accommodating groove 80 Transparent conductive layer 90 Second metal wire 100 First metal electrode 110 Second metal electrode 120 first metal connector 130 second metal connector
100107448 表單編號A0101 第11頁/共19頁 1002012619-0100107448 Form No. A0101 Page 11 of 19 1002012619-0