JP2004047504A - Light-emitting diode having enhanced emission efficiency - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enhance emission efficiency and emission luminance effectively, by isolating a working current advancing into a second bottom end region. <P>SOLUTION: A light-emitting diode is provided, at an appropriate position of an LED epitaxial layer 23, with an annular trench 31 incorporating an insulating layer and a light-reflecting layer. The LED epitaxial layer is divided into a first epitaxial layer region 235 and a second epitaxial layer region 237, wherein a light reflecting layer 33, an insulating layer 35 and a second electrode 29 are formed sequentially on the surface of the first epitaxial layer. Inflow line of a working current into the second electrode bottom end region is isolated by the insulating layer, and a plurality of elongation contacts 39 are provided independently in the second epitaxial layer region. An elongation conducting circuit electrically concatenates each elongation contact with the second electrode to form a conduction circuit of the working current, between the first electrode 27 and second electrodes. The emission region passing the all working currents exists in the non-shielded second epitaxial layer region of the second electrode, and emission efficiency and emission luminance of the LED can be enhanced effectively through the action of the light reflecting layer on the side of the trench. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a light emitting diode, and more particularly, to a light emitting diode in which an action current is prevented from entering a bottom end region of a second electrode, thereby effectively increasing luminous efficiency and luminance.
[0002]
[Prior art]
Light-emitting diodes (LEDs) have a long life, small volume, low heat generation, low power consumption, fast reaction speed, and have the characteristics and advantages of single light emission. Is considered to be the best choice.
[0003]
In the history of the development of light emitting diodes, how to increase light emission luminance and light emission efficiency has always been the focus of research and development in various fields. For example, “Semiconductor light emitting device” by Toshiba in US Pat. No. 5,153,889, US Pat. Patent No. 6,319,778, "Method of Making Light Emitting Diode" by United Epitaxy Company, Taiwan Patent Publication No. 232753 by the Institute of Industrial Technology, Taiwan Patent Publication No. 264573 by Mr. Chen Sawa Peng, etc. The present invention relates to an improvement in the structure of a light-emitting diode submitted on the agenda.
[0004]
FIG. 1 is a structural cross-sectional view of US Pat. No. 5,153,889, which shows an LED epitaxial device having a pn junction composed of a first electrode 17, a substrate 11, a lower cladding layer 13, an active layer and an upper cladding layer. It is composed of a layer 13, a light-transmitting window layer 15, a second electrode 19, and a current blocking layer 14. Among them, the provision of the current blocking layer 14 reduces the chance of the working current 19 passing through the position of the bottom layer region of the second electrode 19, thereby relatively increasing the working current flow line at other positions of the LED epitaxial layer 15. , Effectively increasing the luminous efficiency. This is as shown in the launch ray d.
[0005]
However, the provision of the current blocking layer 14 requires a combination of the light-transmitting window layer 15 and increases the spatial volume of the structure. In addition, in the known structure, a part of the working current passes through the second electrode 19 and the bottom region of the current blocking layer 14, which is like the working current indicated by the dotted line a. The forward emitting light beam b generated when passing through the pn junction is absorbed by the current blocking layer 14, thereby relatively reducing the luminous efficiency of the LED. In addition, the emitted light generated by the pn junction also generates some oblique light rays c1 and c2 in addition to the positive light ray d, and some of these oblique light rays c1 and c2 are used as the second electrode 19 or the electric current. The light was shielded and absorbed by the blocking layer 19, so that the emission luminance of the LED was relatively reduced.
[0006]
[Problems to be solved by the invention]
Thereby, it is possible to freely design whether to design a novel light emitting diode structure, to combine or not combine a light transmitting window layer, and to prevent an action current from passing through the bottom layer position region of the second electrode. The emphasis of the present invention is to increase the light emission luminance and light emission efficiency of the LED relatively.
[0007]
A main object of the present invention is to provide a kind of light emitting diode with enhanced luminous efficiency, which is provided with a light reflecting layer in the trench and on the upper surface of the first epitaxial layer, and is effective due to its light reflecting action. It is assumed that the light emitting diode is a light emitting diode in which the light emission luminance of the LED is increased.
[0008]
It is another object of the present invention to provide a kind of light emitting diode with increased luminous efficiency, which can determine whether to combine the light transmitting window layer according to the actual design needs, and thereby, It is assumed that the light emitting diode can effectively reduce the structural volume.
[0009]
[Means for Solving the Problems]
According to a first aspect of the present invention, there is provided a light emitting diode having a high luminous efficiency,
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An LED epitaxial layer having a pn junction grown on the substrate, the LED epitaxial layer having at least one trench penetrating the pn junction at an appropriate position, and the LED epitaxial layer having a first epitaxial layer region; The LED epitaxial layer divided into a second epitaxial layer region and provided with a side light reflecting layer and an insulating layer in the trench;
A bottom insulating layer provided on an upper surface of the first epitaxial layer region;
A second electrode provided on the upper surface of the bottom end insulating layer;
The at least one extended contact point provided on the upper surface of the second epitaxial layer region and having conductive characteristics, and each extended contact point is electrically connected to the second electrode by an extended conductive circuit. One stretching contact point,
A first electrode provided on a bottom layer of the substrate;
The light-emitting diode is characterized by having a high luminous efficiency.
According to a second aspect of the present invention, there is provided the light-emitting diode according to the first aspect, wherein the extended conductive circuit is formed of a light-transmitting conductive film.
According to a third aspect of the present invention, there is provided the light emitting diode having the enhanced luminous efficiency according to the first aspect, wherein an extended insulating layer is provided on a bottom layer of the extended conductive circuit. .
According to a fourth aspect of the present invention, there is provided the light emitting diode having the enhanced luminous efficiency according to the first aspect, wherein an extended light reflecting layer is provided on a bottom layer of the extended conductive circuit. I have.
According to a fifth aspect of the present invention, there is provided the light emitting diode having the improved luminous efficiency according to the first aspect, further comprising a bottom end light reflection layer provided on an upper surface of the first epitaxial layer region. The light emitting diode has been enhanced.
According to a sixth aspect of the present invention, there is provided a light-emitting diode having a high luminous efficiency according to the first aspect, wherein a Bragg reflection layer is provided at a bottom end of the LED epitaxial layer. I have.
According to a seventh aspect of the present invention, there is provided the light emitting diode having the improved luminous efficiency according to the first aspect, wherein one extended contact ring having an annular aspect is formed instead of the extended contact point. The light emitting diode has been enhanced.
According to an eighth aspect of the present invention, in the light emitting diode having the improved luminous efficiency according to the first aspect, the first epitaxial layer region is located at a central portion of the LED epitaxial layer, and the trench has an annular shape. A light-emitting diode with high luminous efficiency, characterized by surrounding a region.
According to a ninth aspect of the present invention, in the light emitting diode having the improved luminous efficiency according to the first aspect, the first epitaxial layer region is located at one side position of the LED epitaxial layer, and the second epitaxial layer region is formed by the trench. The light emitting diode is characterized by being classified, and has a high luminous efficiency.
According to a tenth aspect of the present invention, in the light-emitting diode having the improved luminous efficiency according to the first aspect, the light-transmitting conductive film is made of indium tin oxide, indium oxide, tin oxide, zinc oxide, magnesium oxide, titanium oxide, nickel oxide, A light-emitting diode with improved luminous efficiency is formed using any one of cobalt oxide, aluminum nitride, indium nitride, titanium nitride, tantalum nitride, and a combination thereof.
According to an eleventh aspect of the present invention, in the light-emitting diode having the improved luminous efficiency according to the first aspect, a light-transmitting window layer is further provided on an upper surface of the LED epitaxial layer, and the light-transmitting window layer has a trench of the LED epitaxial layer. A channel is formed at a portion corresponding to the vertical extension position of the above, and the channel is integrated with the trench to provide a light emitting diode with improved luminous efficiency.
A twelfth aspect of the present invention is the light emitting diode of the first aspect, wherein the trench is located at a vertically extending position of the second electrode. .
According to a thirteenth aspect of the present invention, in a light emitting diode having a high luminous efficiency,
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An LED epitaxial layer having a pn junction grown on the substrate, the LED epitaxial layer having at least one trench penetrating the pn junction at an appropriate position, and the LED epitaxial layer having a first epitaxial layer region; The LED epitaxial layer divided into a second epitaxial layer region and provided with a light reflection layer in the trench;
A bottom insulating layer provided on an upper surface of the first epitaxial layer region;
A second electrode provided on the upper surface of the bottom end insulating layer;
At least one light-transmitting conductive film provided on the upper surface of the second epitaxial layer region and having conductive characteristics;
A first electrode provided on a bottom layer of the substrate;
The light-emitting diode is characterized by having a high luminous efficiency.
According to a fourteenth aspect of the present invention, in the light emitting diode having the improved luminous efficiency according to the thirteenth aspect, the light transmitting conductive film is at least one extended contact point distributed on the upper surface of the second epitaxial layer region. The contact point is electrically connected to the second electrode by the stretched conductive circuit, and a stretched insulating layer is provided at the bottom end of the stretched conductive circuit, whereby the stretched conductive circuit has an aspect in which the second epitaxial layer region is isolated. A light-emitting diode with improved luminous efficiency is characterized.
According to a fifteenth aspect of the present invention, in the light emitting diode having the improved luminous efficiency according to the thirteenth aspect, a light emitting efficiency is improved, wherein a bottom light reflecting layer is provided on an upper surface of the first epitaxial layer region. It is a light emitting diode.
According to a sixteenth aspect of the present invention, in the light emitting diode with improved luminous efficiency according to the thirteenth aspect, the first epitaxial layer region is provided at one of a center position and a side position of the LED epitaxial layer. In this case, the light emitting diode has a high luminous efficiency.
According to a seventeenth aspect of the present invention, in the light emitting diode with improved luminous efficiency according to the thirteenth aspect, a light transmitting window layer is provided on an upper surface of the LED epitaxial layer, and the light transmitting window layer has a trench of the LED epitaxial layer. A channel is provided corresponding to the vertically extending position, and the channel is integrated with the trench, thereby providing a light emitting diode with improved luminous efficiency.
An eighteenth aspect of the present invention is the light-emitting diode having the enhanced luminous efficiency according to the thirteenth aspect, wherein the trench is located at a vertically extending position of the second electrode. .
According to a nineteenth aspect of the present invention, there is provided the light emitting diode according to the thirteenth aspect, wherein a Bragg light reflecting layer is provided at a bottom end of the LED epitaxial layer. And
According to a twentieth aspect of the present invention, in a light-emitting diode having improved luminous efficiency,
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An LED epitaxial layer having a pn junction grown on the substrate, the LED epitaxial layer having at least one trench penetrating the pn junction at an appropriate position, and the LED epitaxial layer having a first epitaxial layer region; The LED epitaxial layer divided into a second epitaxial layer region and provided with an insulating layer in the trench;
A bottom insulating layer provided on an upper surface of the first epitaxial layer region;
A second electrode provided on the upper surface of the bottom end insulating layer;
At least one light-transmitting conductive film provided on the upper surface of the second epitaxial layer region and having conductive characteristics;
A first electrode provided on a bottom layer of the substrate;
The light-emitting diode is characterized by having a high luminous efficiency.
According to a twenty-first aspect of the present invention, in the light-emitting diode having the improved luminous efficiency according to the thirteenth aspect, the light-transmitting conductive film is at least one extended contact point distributed on the upper surface of the second epitaxial layer region. A light-emitting diode with improved luminous efficiency, characterized in that the contact point is electrically connected to the second electrode by an extended conductive circuit.
According to a twenty-second aspect of the present invention, in a light-emitting diode having improved luminous efficiency,
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An LED epitaxial layer having a pn junction is grown on the substrate, and a central groove extending through the pn junction is provided at a center position of the LED epitaxial layer, and the LED epitaxial layer is formed by the central groove. The LED epitaxial layer divided into a first epitaxial layer region and a second epitaxial layer region, wherein a light reflecting layer and a bottom end insulating layer are provided in the central groove;
A second electrode provided on the upper surface of the bottom end insulating layer;
At least one light-transmitting conductive film provided on the upper surface of the second epitaxial layer region and having conductive characteristics;
A first electrode provided on a bottom layer of the substrate;
The light-emitting diode is characterized by having a high luminous efficiency.
According to a twenty-third aspect of the present invention, in the light-emitting diode having the improved luminous efficiency according to the twenty-second aspect, the light-transmitting conductive film is at least one extended contact point distributed on the upper surface of the second epitaxial layer region. The contact point is electrically connected to the second electrode by the stretched conductive circuit, and a stretched insulating layer is provided at a bottom end of the stretched conductive circuit, so that the stretched conductive circuit exhibits an aspect separated from the second epitaxial layer region. It is a light emitting diode with a high luminous efficiency.
According to a twenty-fourth aspect of the present invention, in the light-emitting diode having the improved luminous efficiency according to the twenty-second aspect, a light-transmitting window layer is provided on an upper surface of the LED epitaxial layer, and the light-transmitting window layer has a central space of the LED epitaxial layer. A channel is provided corresponding to the longitudinally extending position of the groove, and the channel is integrated with the central groove, thereby providing a light emitting diode with improved luminous efficiency.
According to a twenty-fifth aspect of the present invention, there is provided the light-emitting diode according to the twenty-second aspect, wherein a Bragg light reflecting layer is provided at a bottom end of the LED epitaxial layer. And
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
2 and 3 are a structural sectional view and a plan view of a preferred embodiment of the present invention. As shown, the main structure of the present invention comprises a substrate 21 having a first electrode 27 on the bottom layer, an LED epitaxial layer 23 formed on the substrate 21 and having a pn junction, and the LED epitaxial layer 23. 23, a light-transmitting window layer 25 provided on the upper layer. Among them, a through hole 213 is provided at an appropriate position of the light transmitting window layer 25, for example, at the center position as in this embodiment, and the through hole 213 penetrates the light transmitting window layer 25 and extends to the pn junction. The LED epitaxial layer 23 is naturally divided into two parts, that is, a first epitaxial layer region 235 and a second epitaxial layer region 237. An insulating layer (side insulating layer) 35 is provided in the trench 31, and a bottom insulating layer 355 is also provided above the first epitaxial layer region 235. Provided in the vertical extension direction of the bottom insulating layer 355, thus, under the isolation surrounding action of the side insulating layer 35 and the bottom insulating layer 355, the action current is increased by the first epitaxial layer below the bottom layer position of the second electrode 29. It does not flow to the pn junction of the region 235.
[0011]
At least one extended contact point 39 having a conductive function is provided at the position of the light transmitting window layer 25 on the second epitaxial layer region 237 provided with the emitted light emitting area, and each extended contact point 39 has a conductive function. The extended conductive circuit 37 is electrically connected to the second electrode 29, and thus the extended contact points 39 at which the second electrode 29 is evenly distributed form the light transmitting window layer 25 around the second electrode 29 and the first electrode 27. An action current circuit is formed in between, so that all the action current passes through the pn junction of the second epitaxial layer region 237 provided with the emission region and generates a light beam, for example, a positive light beam d, thereby ensuring the operation. There is no situation in which the current passes through the bottom layer region of the second electrode 29 to block the emitted light, and the luminous efficiency of the LED is effectively increased.
[0012]
In addition, a light reflecting layer 33 is provided on the inner side of the trench 31 in order to effectively use the oblique light rays e generated by the LED epitaxial layer 23, whereby the light reflecting layer 33 is emitted toward the second electrode 29 and The oblique light rays e, which can be absorbed and shielded by the light, are reflected to the LED emission area, and thereby the light emission luminance of the LED is greatly increased. However, if the extending conductive circuit 37 is formed of a translucent material, it is advantageous to increase the light emission luminance of the LED. And, for simplicity of the process, it is also possible to directly form the light-transmitting conductive film after forming the bottom insulating layer 355, for example, indium tin oxide, indium oxide, tin oxide, zinc oxide, magnesium oxide, titanium oxide, nickel oxide. , Cobalt oxide, aluminum nitride, indium nitride, titanium nitride, or tantalum nitride, which can be formed on the upper surface of the light-transmitting window layer 25 on the bottom insulating layer 355 and the second epitaxial layer region 237, and as a directly extended conductive circuit. The second electrode 29 or the extended contact point 39 may be provided directly on the surface of the light-transmitting conductive film, or may be directly formed individually on the surface of the bottom insulating layer 355 and the light-transmitting window layer 25. It is possible, and in this situation, instead of the stretch contact point 39, a direct translucent conductive film is employed.
[0013]
FIG. 4 is a plan view of another embodiment of the present invention, in which a single extending contact ring 49 is designed instead of a plurality of extending contact points 39, thereby providing a relatively small number of extending conductive circuits. 37 can be used to achieve the function of dispersing the working current and thereby relatively reduce the chance of blocking the emission light source of the extended conductive circuit 37, thereby increasing the overall light emission brightness. Of course, the extension contact point 39 or the extension contact ring 49 can be formed of a light-transmitting material, for example, ITO.
[0014]
FIG. 5 is a structural cross-sectional view of another embodiment of the present invention. As shown, in this embodiment, the trench 51 is provided on one side of the LED epitaxial layer 43 and the light-transmitting window layer 45, and the first epitaxial layer region 435 and the second epitaxial layer region 437 are also naturally formed. The insulating layer 55 or the light reflecting layer 53 is formed in the trench 51, and the extended insulating layer 555 is provided along the extended conductive circuit 37 on the second electrode 29 bottom layer and the upper surface of the light transmitting window layer 45. Further, an extended conductive circuit 37 having a conductive function is provided between the second electrode 29 and the extended contact point 39, thereby achieving the purpose of increasing the LED light emission luminance and light emission purpose relatively easily.
[0015]
In addition, in order to reduce the space ratio occupied by the inactive first epitaxial layer region 435, the trench 51 can be completely provided in the vertical extension region of the bottom layer of the second electrode 29.
[0016]
Finally, FIG. 6 is a structural cross-sectional view of another embodiment of the present invention, and as shown, the design of the trench 51 of the present invention is provided for breaking the pn junction, thereby The light-transmitting window layers 45 of the above embodiments may not be combined depending on actual needs. Instead of the trench 51 of the above-described embodiment, it is also possible to form a central groove 61 which penetrates deeply into the pn junction. This also naturally forms the LED epitaxial layer 63 with the first epitaxial layer region 635 and the second epitaxial layer region. 637. A bottom end light reflection layer 615 and a side light reflection layer 611 are provided in the central groove 61, and an extended light reflection layer having a light reflection function along the upper surface of the extended conductive circuit 67 in the second epitaxial layer region 637. 617 is provided, and a bottom end insulating layer 65 and a stretched insulating layer 655 are provided for each core on the surface of the bottom end light reflecting layer 615, the side light reflecting layer 611, and the extended light reflecting layer 617, and then the bottom end The second electrode 29 is provided on the insulating layer 65, and the extended conductive circuit 67 completes the electrical connection between the second electrode 29 and the extended contact point 39.
[0017]
In addition, in order to effectively increase the light emission luminance of the LED, a light reflection layer 69 having a conductive function, for example, a Burg reflection layer (DBR) is provided on the bottom edge of the LED epitaxial layer 63, on the upper or lower layer of the first electrode 27. Is provided, whereby oblique light rays e, f, or g reach the effective light emitting region by light ray reflection of the DBR 69, the bottom end light reflection layer 615, the side light reflection layer 611, or the extended light reflection layer 617. The effect of effectively increasing the luminous efficiency and luminous brightness of the LED is achieved.
[0018]
【The invention's effect】
In summary, the present invention relates to a kind of light emitting diode, and more particularly, to a light emitting diode that effectively enhances luminous efficiency and luminous brightness by isolating a working current from entering the second bottom end region. Thus, the present invention has novelty, inventive step and industrial value. The above embodiments do not limit the scope of the present invention, and any modification or alteration of details that can be made based on the present invention shall fall within the scope of the present invention.
[Brief description of the drawings]
FIG. 1 is a structural sectional view of a known light emitting diode.
FIG. 2 is a structural sectional view of a preferred embodiment of the present invention.
FIG. 3 is a structural plan view of the embodiment of FIG. 2 of the present invention.
FIG. 4 is a structural plan view of another embodiment of the present invention.
FIG. 5 is a structural sectional view of still another embodiment of the present invention.
FIG. 6 is a structural sectional view of still another embodiment of the present invention.
[Explanation of symbols]
REFERENCE SIGNS LIST 11 substrate 13 LED epitaxial layer 14 current blocking layer 15 light-transmitting window layer 17 first electrode layer 19 second electrode 21 substrate 23 LED epitaxial layer 235 first epitaxial layer region 237 second epitaxial layer region 25 light-transmitting window layer 27 first Electrode 29 Second electrode 31 Trench 313 Through hole 33 Light reflecting layer 35 Insulating layer 355 Bottom insulating layer 37 Extended conductive circuit 39 Extended contact point 45 Transparent window layer 43 LED epitaxial layer 435 First epitaxial layer region 437 Second epitaxial layer Region 49 Extended contact ring 51 Trench 53 Light reflecting layer 55 Insulating layer 555 Extended insulating layer 61 Central groove 611 Side light reflecting layer 615 Bottom end light reflecting layer 617 Extended light reflecting layer 63 LE Epitaxial layer 635 first epitaxial layer region 637 second epitaxial layer region 65 bottom end insulating layer 655 stretched insulating layer 67 extending conductive circuit 69 the light reflecting layer

Claims (25)

In light emitting diodes with increased luminous efficiency,
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An LED epitaxial layer having a pn junction grown on the substrate, the LED epitaxial layer having at least one trench penetrating the pn junction at an appropriate position, and the LED epitaxial layer having a first epitaxial layer region; The LED epitaxial layer divided into a second epitaxial layer region and provided with a side light reflecting layer and an insulating layer in the trench;
A bottom insulating layer provided on an upper surface of the first epitaxial layer region;
A second electrode provided on the upper surface of the bottom end insulating layer;
The at least one extended contact point provided on the upper surface of the second epitaxial layer region and having conductive characteristics, and each extended contact point is electrically connected to the second electrode by an extended conductive circuit. One stretching contact point,
A first electrode provided on a bottom layer of the substrate;
A light-emitting diode with improved luminous efficiency, comprising: 2. The light-emitting diode according to claim 1, wherein the extended conductive circuit is a light-transmitting conductive film. 2. The light-emitting diode according to claim 1, wherein a stretched insulating layer is provided on a bottom layer of the stretched conductive circuit. 2. The light-emitting diode according to claim 1, wherein an extended light reflection layer is provided on a bottom layer of the extended conductive circuit. 2. The light emitting diode according to claim 1, further comprising a bottom light reflection layer provided on an upper surface of the first epitaxial layer region. 2. The light emitting diode according to claim 1, wherein a Bragg reflection layer is provided at a bottom end of the LED epitaxial layer. 2. The light emitting diode with enhanced luminous efficiency according to claim 1, wherein one extended contact ring having an annular shape is formed instead of the extended contact point. 2. The light emitting diode according to claim 1, wherein the first epitaxial layer region is located at a central portion of the LED epitaxial layer, and the trench has an annular shape and surrounds the first epitaxial layer region. A light emitting diode with improved luminous efficiency. 2. The light emitting diode according to claim 1, wherein the first epitaxial layer region is located on one side of the LED epitaxial layer and is separated from the second epitaxial layer region by a trench. Light emitting diode with improved luminous efficiency. 2. The light-emitting diode according to claim 1, wherein the light-transmitting conductive film is made of indium tin oxide, indium oxide, tin oxide, zinc oxide, magnesium oxide, titanium oxide, nickel oxide, cobalt oxide, aluminum nitride, or nitrided. A light-emitting diode with improved luminous efficiency, formed of any one of indium, titanium nitride, tantalum nitride and a combination thereof. 2. The light emitting diode according to claim 1, wherein a light transmitting window layer is further provided on an upper surface of the LED epitaxial layer, and the light transmitting window layer corresponds to a vertically extending position of a trench of the LED epitaxial layer. A light emitting diode with improved luminous efficiency, characterized in that a channel is formed in a portion where the channel is formed, and the channel is integrated with the trench. 2. The light emitting diode according to claim 1, wherein the trench is located at a vertically extending position of the second electrode. In light emitting diodes with increased luminous efficiency,
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An LED epitaxial layer having a pn junction grown on the substrate, the LED epitaxial layer having at least one trench penetrating the pn junction at an appropriate position, and the LED epitaxial layer having a first epitaxial layer region; The LED epitaxial layer divided into a second epitaxial layer region and provided with a light reflection layer in the trench;
A bottom insulating layer provided on an upper surface of the first epitaxial layer region;
A second electrode provided on the upper surface of the bottom end insulating layer;
At least one light-transmitting conductive film provided on the upper surface of the second epitaxial layer region and having conductive characteristics;
A first electrode provided on a bottom layer of the substrate;
A light-emitting diode with improved luminous efficiency, comprising: 14. The light-emitting diode according to claim 13, wherein the light-transmitting conductive film is at least one extended contact point distributed on the upper surface of the second epitaxial layer region, and each extended contact point is formed by an extended conductive circuit. A stretched insulating layer is provided at a bottom end of the stretched conductive circuit, the stretched conductive circuit being electrically connected to the second electrode, whereby the stretched conductive circuit has a mode in which the second epitaxial layer region is isolated. Light-emitting diode with improved luminous efficiency. 14. The light-emitting diode according to claim 13, wherein a bottom light reflection layer is provided on an upper surface of the first epitaxial layer region. 14. The light emitting diode according to claim 13, wherein the first epitaxial layer region is provided at one of a center position and a side position of the LED epitaxial layer. Light emitting diode. 14. The light-emitting diode with enhanced luminous efficiency according to claim 13, wherein a light-transmitting window layer is provided on an upper surface of the LED epitaxial layer, and the light-transmitting window layer corresponds to a vertically extending position of a trench of the LED epitaxial layer. A light-emitting diode having improved luminous efficiency, wherein a channel is provided, and the channel is integrated with the trench. 14. The light emitting diode with improved light emitting efficiency according to claim 13, wherein the trench is located at a vertically extending position of the second electrode. 14. The light-emitting diode according to claim 13, wherein a Bragg light reflection layer is provided at a bottom end of the LED epitaxial layer. In light emitting diodes with increased luminous efficiency,
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An LED epitaxial layer having a pn junction grown on the substrate, the LED epitaxial layer having at least one trench penetrating the pn junction at an appropriate position, and the LED epitaxial layer having a first epitaxial layer region; The LED epitaxial layer divided into a second epitaxial layer region and provided with an insulating layer in the trench;
A bottom insulating layer provided on an upper surface of the first epitaxial layer region;
A second electrode provided on the upper surface of the bottom end insulating layer;
At least one light-transmitting conductive film provided on the upper surface of the second epitaxial layer region and having conductive characteristics;
A first electrode provided on a bottom layer of the substrate;
A light-emitting diode with improved luminous efficiency, comprising: 14. The light-emitting diode according to claim 13, wherein the light-transmitting conductive film is at least one extended contact point distributed on the upper surface of the second epitaxial layer region, and each extended contact point is formed by an extended conductive circuit. A light-emitting diode having improved luminous efficiency, wherein the light-emitting diode is electrically connected to a second electrode. In light emitting diodes with increased luminous efficiency,
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An LED epitaxial layer having a pn junction is grown on the substrate, and a central groove extending through the pn junction is provided at a center position of the LED epitaxial layer, and the LED epitaxial layer is formed by the central groove. The LED epitaxial layer divided into a first epitaxial layer region and a second epitaxial layer region, wherein a light reflecting layer and a bottom end insulating layer are provided in the central groove;
A second electrode provided on the upper surface of the bottom end insulating layer;
At least one light-transmitting conductive film provided on the upper surface of the second epitaxial layer region and having conductive characteristics;
A first electrode provided on a bottom layer of the substrate;
A light-emitting diode with improved luminous efficiency, comprising: 23. The light-emitting diode with improved luminous efficiency according to claim 22, wherein the light-transmitting conductive film is at least one extended contact point distributed on the upper surface of the second epitaxial layer region, and each extended contact point is formed by an extended conductive circuit. The luminescent efficiency is characterized by being electrically connected to the second electrode and being provided with a stretched insulating layer at the bottom end of the stretched conductive circuit so that the stretched conductive circuit is isolated from the second epitaxial layer region. Enhanced light emitting diode. 23. The light-emitting diode with improved luminous efficiency according to claim 22, wherein a light-transmitting window layer is provided on an upper surface of the LED epitaxial layer, and the light-transmitting window layer is provided at a vertically extending position of a central groove of the LED epitaxial layer. A light emitting diode with improved luminous efficiency, characterized in that a channel is provided correspondingly and the channel is integrated with the central groove. 23. The light-emitting diode according to claim 22, wherein a Bragg light reflection layer is provided at a bottom end of the LED epitaxial layer.

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