201222854 六、發明說明： 【發明所屬之技術領域】 本發明係有關於-_於_紅外仅軸太陽能電池組 ^吉構，尤指-種有效阻隔紅外光並具有高導電率之薄膜太陽能 電池組成結構。 【先前技術】 因全球太陽能市場需求成長，造成石夕原料供應不足、石夕晶 太陽能電池及模組生產成本水漲船高。而薄膜太陽能電池因具有 輕薄、低成本、可換曲、多種外觀設計等優點，成為繼梦晶太陽 能電池之後’被認為是當前最具發展潛力的太陽能技術。 太陽能發電的技術，依製程區分主要分為結晶矽（Wafer base)及薄膜（ThinFihnbase)太陽能電池兩大類。其中因矽具 有無毒性、氧化物穩定等優點，加上產業界已有成熟穩定的工業 處到支術來處理♦材料，因此’ m陽能電池為目前市場應用 主流，占全球市場約達九成。 然而，由於近年來德國、西班牙等國在太陽能推動政策影 響下，太陽能電池模組市場需求強勁推升，2007年，太陽能電池 模組的需求增溫，曾導致矽原料嚴重缺貨，價格飛漲。雖然自⑽ 下半年以來，因多晶矽廠商產能陸續開出，加上市場需求趨緩， 促使碎原料價格逐漸調降，但矽原料價格不穩定的經歷，已讓太 陽能薇商更加體認風險分散的重要性；再者，♦晶太陽能產業因 设備及製程技術成熟、進入門檻低，在眾多競爭者的產業中，以 往的尚毛利時代已難以復見，、促使太陽能廠商加速將研發觸角轉 201222854 向薄膜太陽能電池領域。 薄膜太陽能電池，顧名思義，乃是在塑膠、玻璃或是金屬基 板上形成可產生光電效應之薄膜，厚度僅需數哗，因此在同一二 光面積下可财晶圓太陽能電池大幅減少補_量。薄膜太陽 能電池並非是新概紅產品，實際上，以往人造衛星早已普遍採 用以石申化鎵(GaAs)製造之高轉換效率薄膜太陽能電池板(以單晶矽 作為基板，轉換效能可達3〇%以上)來進行發電，但其成本昂貴， 多用於航太產業’現今無法普及。故目前#界主流錄用非晶石夕 ㈣)來製作薄膜太陽能電池的光吸收層(即半導體層卜薄膜太陽 能電池可在價格低廉的_、_或獨鋼基板上大量製作，以 生產出大面積的太陽能電池’而其製程更可直接導人已經相當成 熟的TFT_LCD製程，此為紐點之—，故業界無不爭相投入該領 域之研究。 基本上，薄膜太陽能電池相對其他類型之太陽能電池而言製 程幸乂為簡單’具有成本低、可大量生產之優點。就薄膜太陽能電 池基板之_而言，其基本製程會經過三層沉娜啊_)、三道 雷射劃線(scribe)手續，如下面所述：首先，先以物理氣相沉積製 程(P VD)在預訂尺寸的玻璃基板上鍍上一層透明導電薄骖 (Transparent Conductive 〇執TC〇)，其選擇透光性高及導電性隹 之材負，如氧化銦錫(IT〇)、氧化錫(Sn〇2)、或氧化鋅(Zn〇)等。换 著以紅外線雷射劃線定義其前電極圖案(pattern ing)。至此為第一道 匕積與sj線手‘。第一階段為主吸收層(Active layer)之製作，其/ 201222854 叙以電毁辅助化學氣相沉積(Plasma201222854 VI. Description of the Invention: [Technical Field] The present invention relates to a _IR-only infrared solar cell module, in particular, a thin film solar cell which effectively blocks infrared light and has high conductivity. structure. [Prior Art] Due to the growth of global solar market demand, the supply of Shixi raw materials is insufficient, and the production cost of Shihuajing solar cells and modules is rising. Thin-film solar cells, due to their advantages of thinness, low cost, interchangeability, and various designs, have become the most promising solar technology after the dream crystal solar cell. The technology of solar power generation is mainly divided into two categories: Wafer base and ThinFihnbase solar cells. Among them, because of its non-toxicity, oxide stability and other advantages, coupled with the industry's mature and stable industrial office to deal with ♦ materials, so 'm yang energy battery is currently the mainstream market application, accounting for about nine in the global market. to make. However, due to the recent solar energy-driven policies in Germany and Spain, the demand for solar cell modules has soared. In 2007, the demand for solar cell modules increased, which led to a serious shortage of raw materials and soaring prices. Although since the second half of (10), due to the continuous production capacity of polysilicon manufacturers and the slowdown in market demand, the price of raw materials has been gradually reduced. However, the experience of unstable raw material prices has made solar PV companies more aware of the risk dispersion. Importance; Moreover, the crystal solar industry is mature due to the mature equipment and process technology, and the barriers to entry are low. In the industry of many competitors, the past is still difficult to see, and the solar manufacturers are accelerating the adoption of R&D to 201222854. To the field of thin film solar cells. Thin film solar cells, as the name suggests, are films that produce photoelectric effects on plastic, glass or metal substrates. The thickness is only a few 哗, so the wafer solar cells can be significantly reduced in the same two-light area. . Thin-film solar cells are not new red products. In fact, high-conversion-efficiency thin-film solar panels made of stellite gallium (GaAs) have been widely used in artificial satellites in the past (using single crystal germanium as a substrate, the conversion efficiency can reach 3〇). More than %) to generate electricity, but its cost is high, and it is mostly used in the aerospace industry's today. Therefore, the current mainstream of the use of amorphous Aussie (4) to produce thin film solar cells light absorption layer (ie, semiconductor layer thin film solar cells can be produced on a low-cost _, _ or steel sheet to produce a large area The solar cell's process can directly lead to the already mature TFT_LCD process, which is the key point, so the industry has no plans to invest in this field. Basically, thin film solar cells are relatively similar to other types of solar cells. Fortunately, the process is a simple one with the advantages of low cost and mass production. In the case of thin-film solar cell substrates, the basic process will pass through three layers of 娜 _), three laser lines (scribe) The procedure is as follows: First, a transparent conductive thin crucible (Transparent Conductive 〇 〇) is coated on the glass substrate of the predetermined size by physical vapor deposition process (P VD), which has high transparency. The conductive material is negative, such as indium tin oxide (IT〇), tin oxide (Sn〇2), or zinc oxide (Zn〇). Instead, the front electrode pattern is defined by an infrared laser scribing line. This is the first hoarding and sj line ‘. The first stage is the production of the main active layer (Active layer), which is / 201222854 by electric shock assisted chemical vapor deposition (Plasma)
Enhanced Chemical Vapor Deposmon，pECVD)製程在電極面上長出-層_麵排列之氮 化非晶石夕結構(p_a_Si:H/i_a_Si地_a_si:H)，此主吸收層係以㈣半 導體接面(p-n junction)作為光吸收及能量轉換的主體結構。此步驟 後同樣會進行雷賴線步驟，為製作出之主吸收層定義圖案，至 此為第道/儿積與劃線手續。最後再以鑛(s_er)製程在其上开》 成1_材胃社的背部雜(baek _taet)，錢行帛三道雷射劃 ® 線定義出其背部電極圖形。 然因使用透明導電層於可見光區的透明性，所選用之透明導 電層的半導體必知寬能隙的半賴，所以顧㈣寛度必須大 於可見光歸麵之制料體，輯加了薄膜太陽能 電池之整體厚度，且為增加透明導電層之導電性質，—般 雜微量雜質的方式，來接# 八执升其導電性，故製程較為麻煩，且因近Enhanced Chemical Vapor Deposmon (pECVD) process produces a layered-plane-arranged nitrided amorphous structure (p_a_Si: H/i_a_Si_____: H) on the electrode surface, the main absorber layer is (4) semiconductor junction (pn junction) is the main structure of light absorption and energy conversion. After this step, the Rayleigh line step is also performed to define the pattern for the main absorbent layer, which is the first track/child and the line. Finally, the mine (s_er) process is used to open the back of the product (baek _taet), and the three lines of the laser line define the back electrode pattern. However, due to the transparency of the transparent conductive layer in the visible light region, the semiconductor of the transparent conductive layer selected must have a wide energy gap, so the (four) twist must be larger than the visible light returning material, and the thin film solar energy is added. The overall thickness of the battery, and in order to increase the conductive properties of the transparent conductive layer, the way of the micro-impurities, to connect the # eight to enhance its conductivity, so the process is more troublesome, and because of the near
年來提倡綠色賴，耻，如何有效阻_卜絲達到節能效果， 以及如何降低_太陽驗體厚度且如域高光穿透率及吸收率 與光電轉換之效率，為此產業亟需解決之問題。 【發明内容】 電池袓成α構之目^在於提供—種肋阻隔紅外光之薄膜太陽能 成、、，。構，触本發明之半義導電金顧具奴射紅外光 之特性，而有效地達到隔熱之效果。 本發明之另一 陽能電池組成結構， 目的在於提供贿隔紅外光之薄膜太 利用半透日聘屬層有效轉低電阻值， r 201222854 以增加導電率，使可利用功率上升，從而提高轉換之效率。 本發月之再目的在於提供—種用於阻隔紅外光之薄膜太 陽能電池組成結構，藉科翻導電金朗取代f知之透明導電 臈，有效鱗域層对透長度，騎域 體轉換效率。 瑨加登 _上述目的之祕卩竭紅外光之_太陽能電池組成結 至儿3第—半剌導電麵層，具有-反射紅外光之 特性，且該第-半翻導電金屬層之—面係為—照射面，用以接 收—自然光，並用以取出電能與提昇光電轉換之效率；- p+n半 導體層，其係形成於該第_半透明導電金屬層下方，用以產生電 子電洞對，以提供光電流並增加紋收率；以及—翻基板，其 係形成於該p-i_n半導體層下方。 本發明薄膜太陽能電池組成結構，進一步包含一第二半透 明導電金屬層，係形成於前述透明基板與p_i_n半導體層之間。 達到上述目的之另一用於阻隔紅外光之薄膜太陽能電池組 成結構’至少包含：導電金屬層，具有—反射紅外 光之特性，且該第-半透明導電金屬層之—面係為—照射面，用 以接收-自然光，並用妹出電能與提昇光電轉換之效率；一 n_i_p 半導體層，其係形成於該第—半透明導電金屬層下方，用以產生 電子電洞對，啸供规流並增加光魏率；錢—透明基板， 其係形成於該n-i-p半導體層下方。 本發明薄膜太陽能電池組成結構，進—步包含一第二半透明 201222854 導電金f層，係形成娜述翻基板與一半導體層之間。 板或是透明可撓性的材料 和述透明基板之材料為玻璃、石英、透明娜、藍寶石基 刚述第-半透明導電金屬層及第二半透明導電金屬 一過渡金屬輸；或前述第—半咖導電金制衫二半透明導 電金屬層包括—第—翻導電氧化物以及—過渡金屬紐之其中 之一者；亦棘述第-半透明導電金屬層及第二半透明導電金屬 層包括-第-透明導電氧化物、—過渡金屬顿之其中之一者以 及一第二透明導電氧化物。 前述過渡金屬為銀或鎳，其中 之間。 則述銀之厚度介於3nm〜;25nm 導電氧化物為氧化鋅 (ZnO )。 前述第-透科·化物及第二透明 銘（AZO)、氧化鋅鎵（GZ〇)或氧化辞硼 【實施方式】 …請參寺第—圖，係顯示本發明第—實施例之用於阻隔紅外 光之薄膜太陽能電池域結構圖。本發_於_紅外光之薄膜 太陽能電池組成結構励，至少包含：一第一半透明導電金屬層 10，具有-反射紅外光之娜，且該第—半翻導電金屬層 =-面係為—照光面’用以接收—自然光，並用以取出電能與提 昇光電轉換之效率；一 p.i_n半導體層20，係形成於該第一半透 明導電金屬層10另—面之下方，用以產生電子電洞對以提供 電流並增加光吸收率；以及至少—透板30，係其形成於該 7 201222854 p-i-n半導體層20下方。 於本實施例中’該透明基板30之材料係可使用一般的玻 璃、石英、透明塑膠、藍寶石基板或是透明可撓性的材料等等。 該第一半透明導電金屬層1〇,可為單一過渡金屬或鋁其中 之一者，該過渡金屬例如為銀或鎳等等，以銀為例，銀之厚度介 於3nm〜25nm之間，且銀之特性於可見光範圍有良好之透光性 且因銀具降低電阻值之特性，因此具有良好之導電性質，較佳 地’銀之厚度介於3nm〜5nm、1〇随〜15nm及20nm〜25nm。 另外因銀之厚度很薄，使薄膜太陽能電池之整體厚度降低。 另本實施例中，該第一半透明導電金屬層1〇，因為單一過 渡金屬或鋁’所以具有反射紅外光之特性，而可達到隔熱之效果。 當該第一半透明導電金屬層1〇之照光面受到太陽光照射 時，因該第一半透導電金屬層1〇具有反射紅外光之特性，所以 可以阻隔紅外光進入至該p-i-n半導體層2〇，以達隔熱之效果， 而其餘光線則可藉由穿透該第一半透明導電金屬層1〇進入至該 p-i-n半導體層2〇，使太陽光照射於卯接面上，俾使部份電子因 擁有足夠的能量，離開原子而變成自由電子，失去電子的原子因 而產生電洞，並透過p型半導體及n型半導體分別吸引電洞與電 子，把正電和負電分開，在pn接面兩端因而產生電位差，再藉 由該第一半透明導電金屬層10連接一電路（圖未示），使電子得 以通過，並與在pn接面另一端的電洞再次結合，便產生電流， 再藉由該第-半透明導電金屬層10取出電能，轉換成可利用 201222854 γ俾使本發明除了能有效地將光轉換為電能外，亦同時兼 之效果’且因本發明之第—半透料1金朗10為過 、又、或!呂其具有良好之導電性，且為使於可見光範圍有良好 之透光性，本㈣之第—半翻導電金屬層⑺之厚度適中，以 避免產生不連續島膜。 本發彻於阻驗枝之_太陽能f池域結構100,因 ，有隔熱效果，所以可咖於麵物之窗戶、大樓帷幕牆、室内 辰業栽種等，以有效地阻隔紅外細照射，有效降低室内溫度以 及降低至内酬所消耗的電量，以達到節省能源的目的。 、…明參考第―圖’係顯示本發明第二實施例之用於阻隔紅外 光之薄膜太陽此電池組成結構圖。本發明用於阻隔紅外光之薄膜 太陽能電池組成結構100，至少包含：一第一半透明導電金屬層 10，’具有-反射紅外光之雛，且該第—半翻導電金屬層1〇, =一面係為-照光面，用以接收—自然光，並収取出電能與提 昇光電轉換之效率；- p-i_n半導體層2〇,，係形成於該第一半透 明導電金屬層10,下方，用以產生電子電洞對，以提供電流並增 加光吸收率；至少-第二半透明導電金屬層4G，係形成於該_ 半導II層20,之下方’用以取出電能與提昇光電轉換之效率；以 及一透明基板30’ ’係其形成於該第二半透明導電金屬層4〇下 方’用以取出電能與提昇光電轉換之效率。 於本實施例中，該透明基板30,之材料係可使用一般的玻 璃、石英、透明_、藍寶石基板或是透明可撓性的材料等等。 201222854 該第-半透明導電金屬層1G，及第二半透明導電金屬層 40，可為單-過渡金屬或銘財之—者，制渡金屬例如為銀或 鎳等等’以銀為例，銀之厚度介於3则〜25細之間，且銀之特 性於可見光範财良好之透紐且祕具降低電_之特性，因 此具有良好之導電性質，較佳地，銀之厚度介於3則〜5顧、ι〇μ 〜15mn及2Gnm〜25则。另外因銀之厚度很薄，使薄膜太陽能電 池之整體厚度降低。 另本實施例中’該第一半透明導電金屬層1〇，因為單一過 渡金屬顿，所以具有反射紅外光之雛，而可達職熱之效果。 當該第-半透明導電金屬層10,之照光面受到太陽光照射 時’因該第-半透導電金屬層1G，具有反射紅外光之雜，所以 可以阻隔紅外光進人至該ρ_ί_η半導體層2G，以達隔熱之效果， 而其餘光_可藉由穿透該第—半透明導電金屬層iQ，進入至該 P-Μ!半導體層2〇’ ’使太陽光照射於卯接面上，俾使部份電子因 擁有足夠的能量，離開原子而變成自由電子，失去電子的原子因 而產生電洞’並透過p型半導體及n型半導體分·引電洞與電 子，把正電和負電分開，在pn接面兩端因而產生電位差，再藉 由該第-半透料電金制1G，及第二半透料電金顧4〇各連 接-電路（圖未示）’使電子得以通過，並與在⑽接面另一端 的電洞再找合，便產生餘，懸㈣第—半翻導電金屬層 10及該第二半透明導電金屬層4G取出電能，以轉換成可利用之 功率’俾使本發明除了能有效地將光轉換為電能外，亦同時兼具 201222854 有隔熱之效果’朗本發明之第—半透明導電金屬層iq，及第二 半透明導電金屬層4〇為過渡金屬或銘，其具有良好之導電性， 且為使於可見絲圍有良好之透紐，本發明之第—半透明導電 金屬層1G，及第二半透明導電金屬層4G之厚度適中，以避免產生 不連續島膜。 本發_雖敝外光之_场能電絲賴構刚，因 =有隔熱效果，所以可翻於建雜之窗戶、大赫幕牆、室内 農業栽種等喝效地_紅外柄照射，纽降低室内溫度以 及降低室m㈣所消耗的電量’以_節省能制目的。 ❸可弟二圖’係顯示本發明第三實施例之用於阻隔紅外 光之薄臈太陽能電池組成結構圖。於本實施例中，其大致結構與 本發明第-實施例相同，不同之處在於，將一層2〇改變為一 層70，同樣可達到隔熱之效果，且同時可降低電阻值，使可利用 功率上升，從而提高轉換之效率。 4考第四圖，係顯示本發明第四實施例之用於阻隔紅外 2薄膜太陽㈣池_結顧。於本實施财，其纽結構與 明第一實施例相同，不同之處在於，將P_i-n層20,改變為 電阻值，使 剛功紅升，從喊高祕之效率。 峨恤成結構之 冑金屬層及第—半透料電金屬層之第-實施離 樣結構圖。本發明薄膜太陽能電池組成結構卿之第-半透日将 201222854 / 電玉屬層10、ι〇及第一半透明導電金屬層明除了可為單一過渡 金屬或銘其中之一者以外，亦可為包括-第-透明導電氧化物5〇 以及-過渡金屬或銘之其中之一者，於本實施例，該第一透明導 電氧化物5〇係形成於該過渡金屬或紹之上方，該第一透明導電 氧化物可為氧化酬ΛΖΟ)、氧化鋅鎵(GZ〇)或氧化鋅硼（Zn〇) 等等透明導電氧化物，此些透明導電氧化物具有較低之電阻率， 俾使增加光之穿透率。 明參考第六圖，係顯示本發明薄膜太陽能電池組成結構之鲁 第-半透明導電金屬層及第二半透明導電金屬層之第二實施態 樣結構圖。本發明薄膜太陽能電池組成結構100之第-半透明導 電金屬層10'1〇及第一半透明導電金屬層包括一第一透明導 電氧化物50,以及-過渡金屬或紹之其中之一者，於本實施例， 4第透明導電氧化物5〇’係形成於該過渡金屬或銘之下方，該 第i明導電氧化物50,可為氧化鋅銘（娜）、氧化鋅鎵（Gz〇) 或氧化鋅爛（Zn0)等等透明導電氧化物，此些透明導電氧化物鲁 具有較低之電阻率，俾使增加光之穿透率。 ★凊參考第七圖，係顯示本發明薄膜太陽能電池組成結構之 第一半透明導電金屬層及第二半透明導電金屬層之第三實施態 樣結構圖。本發明薄膜太陽能電池組成結構100之第-半透明導 電金屬層10、10,及第二半透明導電金屬層4〇包括一第一透明導 電氧化物50，，、-過渡金屬或銘之其中之—者以及—第二透明導 電乳化物6G，於本實施例中，該過渡金屬雜係置於該第一透明 12 201222854 導電乳化物50”及第二透明導電氧化物的之間，該第一透明導電 乳化物50”及第二透明導電氧化物的可物_ _)、氧 化鋅鎵（咖）或氧化_ (Zn⑴科翻導魏化物，此些 透明導電氧化物具有較低之電辦，俾使增加光之穿透率。 :導電率，使可利用4:===藉= 增加先反射特性，以增加整體轉換效率。 【圖式簡單說明】 第一圖係顯示本發明第—實施例之阻隔紅外光之薄膜 太陽能電池組成結構圖。 第二圖係顯示本發明第二實施例之用於阻隔紅外光之薄膜 太陽能電池組成結構圖。 第三圖係顯示本發明第三實施例之用於阻隔紅外光之薄膜 太陽能電池組成結構圖。 、 第四圖係顯示本發明第四實施例之用於阻隔紅外光之薄膜 太陽能電池組成結構圖。 第五圖係顯示本發姻於阻隔紅外光之_太陽能電池組 成結構之第—半透卿電金屬層及第二半透明導電金屬層之第一 實施態樣結構圖。 13 201222854 第六圖係顯不本發明用於阻隔紅外 成結構之[钱料電金麟衫 ;^摘能電池組 實施態樣結顧。 帛—+翻導電金屬層之第二 第七圖係顯示本發明用於阻隔紅外 成結構之第〆半透日將電金屬層及第 ;能電池組 實施態樣結構圖。 導電金屬層之第三 【主要元件符號說明】 100…溥臈太陽能電池組成結構 10、10’…第—半透明導電金屬層 20'20’〜p-i-η半導體層 30、30’…透明基板 40…第二半透明導電金屬層 50、50、50”…第一透明導電氧化物 60…第二透明導電氧化物 70、70’·ϋρ半導體層In the past year, we have advocated green and shameful, how to effectively block the energy saving effect, and how to reduce the thickness of the solar specimen, such as the high-light transmittance and absorption rate and the efficiency of photoelectric conversion, which is an urgent problem for the industry. SUMMARY OF THE INVENTION The purpose of the battery to form an alpha structure is to provide a thin film solar energy that blocks infrared light. The structure of the semi-sense conductive gold of the present invention is effective in achieving the effect of heat insulation. Another cation battery structure of the present invention is intended to provide a thin film of infrared light that utilizes a semi-transparent day to effectively reduce the resistance value, r 201222854 to increase the conductivity and increase the available power, thereby improving the conversion. effectiveness. The re-purpose of this month is to provide a thin-film solar cell structure for blocking infrared light, and to replace the transparent conductive 臈 by the conductive gilt, and to effectively convert the scalar layer to the length and the conversion efficiency of the riding region.瑨加登_ The secret of the above purpose 卩 红外 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ - an illuminating surface for receiving - natural light and for extracting electrical energy and enhancing the efficiency of photoelectric conversion; - a p + n semiconductor layer formed below the _translucent conductive metal layer for generating an electron hole pair, To provide photocurrent and increase grain yield; and to flip the substrate, which is formed under the p-i_n semiconductor layer. The thin film solar cell of the present invention further comprises a second semi-transparent conductive metal layer formed between the transparent substrate and the p_i_n semiconductor layer. Another thin film solar cell structure for blocking infrared light, which comprises the above-mentioned object, comprises at least: a conductive metal layer having a characteristic of reflecting infrared light, and the surface of the first semi-transparent conductive metal layer is an irradiation surface For receiving - natural light, and using the electrical energy of the sister to enhance the efficiency of photoelectric conversion; an n_i_p semiconductor layer is formed under the first semi-transparent conductive metal layer for generating electron hole pairs, whistling and flowing Increasing the light rate; a money-transparent substrate formed under the nip semiconductor layer. The thin film solar cell of the present invention comprises a second translucent 201222854 conductive gold f layer formed between the substrate and a semiconductor layer. The material of the plate or the transparent flexible material and the transparent substrate is glass, quartz, transparent sapphire, sapphire-based, semi-transparent conductive metal layer and second translucent conductive metal-transition metal; or the aforementioned The semi-transparent conductive gold shirt has a semi-transparent conductive metal layer including one of a first-turn conductive oxide and a transition metal button; and the first-translucent conductive metal layer and the second semi-transparent conductive metal layer are also included a first transparent conductive oxide, one of a transition metal, and a second transparent conductive oxide. The aforementioned transition metal is silver or nickel with between. The thickness of the silver is between 3 nm and 25 nm; the 25 nm conductive oxide is zinc oxide (ZnO). The above-mentioned first-trans-chemical compound and second transparent crystal (AZO), zinc gallium oxide (GZ〇) or oxidized boron [embodiment] ... please refer to the temple - map, showing the first embodiment of the present invention A structural diagram of a thin film solar cell that blocks infrared light. The present invention is characterized in that: the first semi-transparent conductive metal layer 10 has a first-transflective conductive metal layer 10, and the first-half-turn conductive metal layer=-face system is - the illuminating surface 'for receiving - natural light, and for extracting electrical energy and improving the efficiency of photoelectric conversion; a p.i_n semiconductor layer 20 is formed under the other surface of the first translucent conductive metal layer 10 for generating An electron hole pair provides current and increases light absorption; and at least a platen 30 is formed under the 7 201222854 pin semiconductor layer 20. In the present embodiment, the material of the transparent substrate 30 can be a general glass, quartz, a transparent plastic, a sapphire substrate or a transparent flexible material or the like. The first translucent conductive metal layer 1 〇 may be one of a single transition metal or aluminum. The transition metal is, for example, silver or nickel. In the case of silver, the thickness of the silver is between 3 nm and 25 nm. And the characteristics of silver have good light transmittance in the visible light range and have good electrical conductivity because of the characteristics of the silver material to lower the resistance value. Preferably, the thickness of silver is between 3 nm and 5 nm, 1 〇 with -15 nm and 20 nm. ~25nm. In addition, since the thickness of silver is very thin, the overall thickness of the thin film solar cell is lowered. In the other embodiment, the first translucent conductive metal layer 1 has a property of reflecting infrared light because of a single transition metal or aluminum ', and the effect of heat insulation can be achieved. When the illuminating surface of the first translucent conductive metal layer 1 受到 is irradiated with sunlight, since the first semi-transmissive conductive metal layer 1 〇 has the characteristic of reflecting infrared light, infrared light can be blocked from entering the pin semiconductor layer 2 〇, in order to achieve the effect of heat insulation, and the rest of the light can penetrate into the pin semiconductor layer 2〇 through the first translucent conductive metal layer 1〇, so that the sunlight is irradiated on the splicing surface, so that the part Since the electrons have enough energy to leave the atom and become free electrons, the electrons lose the electrons and thus generate holes, and the holes and electrons are respectively attracted by the p-type semiconductor and the n-type semiconductor, and the positive and negative charges are separated, and the pn is connected. A potential difference is generated between the two ends of the surface, and a circuit (not shown) is connected to the first translucent conductive metal layer 10 to allow electrons to pass through and recombine with the hole at the other end of the pn junction to generate a current. And extracting the electric energy by the first semi-transparent conductive metal layer 10, and converting into the use of 201222854 γ 俾, the invention can effectively convert the light into electric energy, and at the same time, the effect is also The first part of the Ming Dynasty - semi-transparent material 1 Jinlang 10 is too, again, or! Lu Qi has good electrical conductivity, and in order to have good light transmission in the visible range, the (four) of the first - half turn conductive metal layer (7) The thickness is moderate to avoid creating a discontinuous island film. This is a complete report on the solar energy pool structure 100, because it has a heat insulation effect, so it can be used in the window of the noodles, the building curtain wall, indoor planting, etc., in order to effectively block infrared fine irradiation, Effectively reduce indoor temperature and reduce the amount of electricity consumed by internal compensation to save energy. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a structural view showing the structure of a solar cell for blocking infrared light according to a second embodiment of the present invention. The thin film solar cell component structure 100 for blocking infrared light comprises at least: a first translucent conductive metal layer 10, 'having a reflection of infrared light, and the first half-turned conductive metal layer 1〇, One side is a illuminating surface for receiving - natural light, and extracting electric energy and improving the efficiency of photoelectric conversion; - p-i_n semiconductor layer 2 〇, is formed on the first translucent conductive metal layer 10, below, To generate an electron hole pair to provide current and increase light absorption rate; at least - a second semi-transparent conductive metal layer 4G is formed under the _ semi-conductive layer 2, below for 'extracting electrical energy and enhancing photoelectric conversion Efficiency; and a transparent substrate 30'' is formed under the second translucent conductive metal layer 4' for extracting electrical energy and improving the efficiency of photoelectric conversion. In the present embodiment, the transparent substrate 30 may be made of a general glass, quartz, transparent s, sapphire substrate or a transparent flexible material or the like. 201222854 The first semi-transparent conductive metal layer 1G and the second semi-transparent conductive metal layer 40 may be single-transition metal or Mingcai, and the metal for the production is, for example, silver or nickel, etc. The thickness of silver is between 3 and 25, and the characteristics of silver are good in visible light and the characteristics of electricity are reduced. Therefore, it has good electrical conductivity. Preferably, the thickness of silver is between 3 then ~5 Gu, ι〇μ~15mn and 2Gnm~25. In addition, due to the thin thickness of the silver, the overall thickness of the thin film solar cell is lowered. In the other embodiment, the first translucent conductive metal layer 1 〇 has a reflection of infrared light and has the effect of generating heat due to a single transition metal. When the illuminating surface of the first semi-transparent conductive metal layer 10 is irradiated with sunlight, 'the first semi-transmissive conductive metal layer 1G has a reflection of infrared light, so that infrared light can be blocked from entering the ρ_ί_η semiconductor layer 2G. In order to achieve the effect of heat insulation, and the remaining light _ can penetrate the first semi-transparent conductive metal layer iQ, and enter the P-Μ! semiconductor layer 2 〇 ' ' to make the sunlight shine on the splicing surface, Some electrons have enough energy to leave the atom and become free electrons. The electrons lose electrons and thus create holes. And through the p-type semiconductor and the n-type semiconductor, the holes and electrons are separated, and the positive and negative charges are separated. Therefore, a potential difference is generated at both ends of the pn junction, and the electrons are passed through the first-semi-transfer electric gold 1G and the second semi-transfer electric energy to each of the connection-circuits (not shown). And re-possing with the hole at the other end of the (10) junction, the remainder is generated, and the suspended (four) first-half-turn conductive metal layer 10 and the second semi-transparent conductive metal layer 4G take out electric energy to be converted into usable power. 'In order to effectively convert the light into In addition, it also has the effect of heat insulation in 201222854. The first semi-transparent conductive metal layer iq and the second semi-transparent conductive metal layer 4 are transition metals or Ming, which have good electrical conductivity. In order to make the visible wire have a good penetration, the thickness of the first semi-transparent conductive metal layer 1G and the second semi-transparent conductive metal layer 4G of the present invention are moderate to avoid generation of a discontinuous island film. This hair _ 敝 敝 敝 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Reducing the indoor temperature and reducing the amount of electricity consumed by the chamber m (4) 'to save energy. Fig. 2 shows a structural diagram of a thin tantalum solar cell for blocking infrared light according to a third embodiment of the present invention. In the present embodiment, the general structure is the same as that of the first embodiment of the present invention, except that changing one layer of 2 turns to one layer 70 can also achieve the effect of heat insulation, and at the same time, the resistance value can be reduced and made available. The power is increased to increase the efficiency of the conversion. 4 is a fourth diagram showing the solar cell (four) pool for blocking the infrared 2 film according to the fourth embodiment of the present invention. In the present implementation, the structure of the new structure is the same as that of the first embodiment, except that the P_i-n layer 20 is changed to a resistance value, so that the power is red and the efficiency is high. The first embodiment of the enamel metal layer and the first semi-transmissive metal layer. The composition of the thin-film solar cell of the present invention may be as follows: 201222854 / electric jade layer 10, ι〇 and the first translucent conductive metal layer may be a single transition metal or one of the inscriptions, In one embodiment, the first transparent conductive oxide 5 is formed on the transition metal or the first metal, or a transition metal or one of the first transparent conductive oxide 5 A transparent conductive oxide may be a transparent conductive oxide such as an oxide oxide, zinc gallium oxide (GZ) or zinc oxide boron (Zn), and the transparent conductive oxide has a lower resistivity and increases Light penetration rate. Referring to the sixth drawing, there is shown a second embodiment of the structure of the semi-translucent conductive metal layer and the second translucent conductive metal layer of the constituent structure of the thin film solar cell of the present invention. The first semi-transparent conductive metal layer 10'1" and the first translucent conductive metal layer of the thin film solar cell composition 100 of the present invention comprise a first transparent conductive oxide 50, and - a transition metal or one of In this embodiment, the 4th transparent conductive oxide 5〇' is formed under the transition metal or the underside, and the ith conductive oxide 50 may be zinc oxide (Na) or zinc gallium oxide (Gz〇). Or a transparent conductive oxide such as zinc oxide (Zn0), which has a lower resistivity, so as to increase the transmittance of light.凊 Referring to the seventh drawing, a third embodiment of the structure of the first transparent conductive metal layer and the second semi-transparent conductive metal layer of the constituent structure of the thin film solar cell of the present invention is shown. The first semi-transparent conductive metal layer 10, 10 and the second semi-transparent conductive metal layer 4 of the thin film solar cell composition 100 of the present invention comprise a first transparent conductive oxide 50, a transition metal or a metal And a second transparent conductive emulsion 6G. In this embodiment, the transition metal is disposed between the first transparent 12 201222854 conductive emulsion 50" and the second transparent conductive oxide, the first Transparent conductive emulsion 50" and the second transparent conductive oxide _ _), zinc gallium oxide (coffee) or oxidized _ (Zn (1) family turned conductive, these transparent conductive oxide has a lower power,俾 Increase the transmittance of light. : Conductivity, make it possible to use 4:=== borrowing = increase the first reflection characteristic to increase the overall conversion efficiency. [Simplified illustration] The first figure shows the first implementation of the present invention. FIG. 2 is a structural diagram of a thin film solar cell for blocking infrared light according to a second embodiment of the present invention. The third figure shows a third embodiment of the present invention. For blocking The structural diagram of the thin-film solar cell of the external light. The fourth figure shows the structural structure of the thin-film solar cell for blocking infrared light according to the fourth embodiment of the present invention. The fifth figure shows that the present invention is used to block the infrared light. The first embodiment of the structure of the solar cell is composed of a semi-transparent electro-metal layer and a second semi-transparent conductive metal layer. 13 201222854 The sixth figure shows that the invention is used for blocking infrared structures. The second seventh figure of the 帛-+ turn-on conductive metal layer shows that the second semi-transparent solar metal layer of the present invention is used for blocking the infrared structure. The first embodiment of the structure of the battery pack. The third layer of the conductive metal layer [Description of the main components] 100...溥臈The structure of the solar cell 10,10'...the-translucent conductive metal layer 20'20'~pi-半导体 semiconductor layer 30, 30'...transparent substrate 40...second semi-transparent conductive metal layer 50, 50, 50"...first transparent conductive oxide 60...second transparent conductive oxide 70,70'·ϋp semiconductor layer