CN201138663Y - Photoelectric converter for serial back electrode - Google Patents
Photoelectric converter for serial back electrode Download PDFInfo
- Publication number
- CN201138663Y CN201138663Y CN 200720098193 CN200720098193U CN201138663Y CN 201138663 Y CN201138663 Y CN 201138663Y CN 200720098193 CN200720098193 CN 200720098193 CN 200720098193 U CN200720098193 U CN 200720098193U CN 201138663 Y CN201138663 Y CN 201138663Y
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- Prior art keywords
- photoelectric conversion
- electrode
- light absorption
- conversion device
- back electrode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a series connection back contact photoelectric conversion device. No electrode is positioned on the surface layer of the utility model; a plurality of components are arranged under the surface layer, including a buffer layer, an upper light absorption area with at least one P-N structure and a band gap of more than 1.42eV, an electric separation area with at least a P electrode and/or a catcher grid as well as at least a N electrode and/or a catcher grid and a transparent insulation layer, a lower light absorption layer with at least P-N structure and a band gap of more than 0.67eV, a transition layer and a catcher grid and/or an electrode in P type area or N type area.
Description
Technical field
The utility model belongs to the opto-electronic conversion goods and makes the field, relates to a kind of photoelectric conversion device, particularly a kind of tandem back electrode photoelectric conversion device.
Background technology
Solar energy as a kind of cleaning, without any the green energy resource that pollutes, and solar power generation causes day by day that as the possibility of one of power supply main source people pay close attention to.
Yet because technical problem, the price of business-like photovoltaic power generation apparatus/solar cell is too high so far, photoelectric conversion efficiency is low excessively.In urban electricity system, high one-time investment cost undoubtedly more photovoltaic power generation apparatus/solar battery product promote and increased difficulty, large-scale development and utilize photovoltaic solar generating, improving the photoelectric conversion efficiency of battery and reducing production costs becomes the core place.Therefore, raise the efficiency, reduce cost, the expansion scale becomes now the theme of developing, produce photovoltaic power generation apparatus/solar cell.
Chinese patent prospectus CN200510003971.2 discloses a kind of photoelectric conversion device, and this device uses the transparency electrode or the nesa coating that concern between resistivity and the transmitance to realize photoelectric conversion rate.At least successively lamination has on the transparent insulating substrate: first transparency electrode, the pin structure that constitutes by p type silicon layer, i type silicon layer and n type silicon layer or the micro-crystallization silicon layer of nip structure, second transparency electrode and backside electrode, wherein, the a certain at least of described first transparency electrode and described second transparency electrode is the ZnO layer that adds Ga, the content of described Ga with respect to Zn for being less than or equal to 15 atoms.But its manufacturing cost is higher.
The Chinese patent prospectus CN200480004033.8 provide a kind of thin-film photoelectric converter, a kind of integrated thin-film photoelectric converter particularly is provided, it improves photoelectric conversion efficiency by open end voltage and fill factor are diminished in the thin-film photoelectric converter that comprises the silicon metal photoelectric conversion unit.This thin-film photoelectric converter, it is the thin-film photoelectric converter that on the interarea of transparency carrier one side, at least ELD, silicon metal photoelectric conversion unit and backplate film is formed in proper order, after forming described silicon metal photoelectric conversion unit, on its surperficial part, has white turbidity discoloration region.Described white turbidity discoloration region is preferably less than or equals 5% of photoelectric conversion regions area.And preferably make integrated thin-film photoelectric converter.Yet the major defect of this device is that optoelectronic transformation efficiency is not high.
Chinese patent prospectus CN03120662.X discloses a kind of photoelectric conversion device and manufacture method thereof, relates to a kind of interfacial characteristics that can improve crystalline silicon based semiconductor and non-crystalline silicon based semiconductor, improves the photoelectric conversion device of binding characteristic.The importing that this photoelectric conversion device has a kind of conductivity type has the crystal based semiconductor of impurity, be formed on the described conductivity type crystal based semiconductor, be essentially real noncrystal based semiconductor film, and be formed on this being essentially on the real noncrystal based semiconductor film, the importing of conductivity type of the same race has the noncrystal based semiconductor film of impurity or other kinds conductive-type impurity, and by described crystal based semiconductor be essentially real noncrystal based semiconductor film and form at the interface, also make atomic concentration that the described average coordination number order that is essentially real noncrystal based semiconductor film of minimizing uses than the concentration height in the main body.But its manufacture method complexity, production cost is higher.
Summary of the invention
The purpose of this utility model provides a kind of photoelectric conversion device of simple, low-cost, high optoelectronic transformation efficiency, to overcome the defective that existing photoelectric conversion device exists.
A distinguishing feature of the present utility model is: the superficial layer surface and/or the bottom surface of the photoelectric conversion device that the utility model relates to both can be the non-planar structures shape, both concaveconvex shape structures, also can be the planar structure shape, electrodeless on the superficial layer of photoelectric conversion device, the collector grid of photoelectric conversion device and/or electrode are folded to come below the superficial layer of this device, so that this device can absorb light quantity in maximum magnitude ground, can improve its photoelectric conversion efficiency significantly.
Another distinguishing feature of the present utility model is: the photoelectric conversion device that the utility model relates to is made up of a plurality of light absorption district tandems with different band gaps, so that this device can absorb the sunlight/energy of various different wave lengths, can improve its photoelectric conversion efficiency significantly.
Comprehensive characteristics of the present utility model are: the photoelectric conversion device that the utility model relates to has very high light absorpting ability, very high photoelectric conversion efficiency, and have advantages such as no cadmium is nontoxic.
The superficial layer surface of the tandem back electrode photoelectric conversion device that the utility model is related and/or bottom surface are plane or non-planar structures shape, apparatus surface laminar surface or be covered with antireflection film layer.At least be provided with under electrodeless on this apparatus surface layer, the superficial layer: resilient coating, contain at least one P-N knot, distinguish in the light absorption of band gap crack more than or equal to 1.42eV, the electric septal area that contains at least one P electrode and/or collector grid, at least one N electrode and/or collector grid and transparent insulation interlayer, contain at least one P-N knot, the band gap crack is more than or equal to the light absorption inferior segment of 0.67eV, transition zone, the collector grid and/or the electrode in P or N type district.Also can adopt transparent material between P-N knot and the P-N knot, as transparent polymer material, ITO, ZnO, ZnS, SnO
2, isolation such as amorphous silicon.
The thickness of the antireflection film layer of the photoelectric conversion device that the utility model is related is 10～200 nanometers.The resilient coating of device is an individual layer or by forming with a kind of multilayer film of or different materials; Its thickness is 10～300 nanometers, and base material comprises SnO
2, among the Al, zinc oxide, zinc sulphide one or more.The district or the thickness of light absorption inferior segment are 10 nanometers～20 micron in the light absorption of device, and the width in p type island region or N type district is 10 nanometers～100 millimeter; Its base material comprises compound/blend that a kind of and/or multiple element in sodium, calcium, zirconium, zinc, germanium, copper, selenium, sulphur, group III A, the VA family element is formed.
The electric septal area thickness of the photoelectric conversion device that the utility model is related is 10 nanometers～20 micron; Wherein, P electrode or N electrode material are selected from SnO
2, in the zinc oxide, tin oxide, Ni, Al, copper one or more, the transparent insulation interlayer is selected from transparent polymer material, ITO, ZnO, ZnS, SnO
2, in amorphous silicon, glass or their blend one or more.Described transition zone is an individual layer or by forming with a kind of multilayer film of or different materials; Its thickness is 7～300 nanometers, is preferably 10～200 nanometers, and base material comprises SnO
2, among the Al, zinc oxide, zinc sulphide one or more.The collector grid in described P or N type district or the thickness of electrode are smaller or equal to the width in p type island region or N type district; Its material is selected from Ni, Al, copper, one or more in the silver.
The base material of the superficial layer of the photoelectric conversion device that the utility model is related comprises transparent polymer material, ITO, ZnO, ZnS, SnO
2, in amorphous silicon, glass or their blend one or more; Its thickness is 0.1 micron～10 millimeters, is preferably 0.05 micron～5 millimeters.
According to the utility model, can and then comprise between the electric septal area of related photoelectric conversion device and the light absorption inferior segment at least one contain at least one P-N knot, band gap is less than 1.42eV but greater than the light absorption district of 0.67eV, at least one contains the electric septal area of at least one P electrode, at least one N electrode and transparent insulation interlayer.Under situation about being provided with between electric septal area and the light absorption inferior segment more than two light absorption districts, the band gap in top light absorption district must be greater than the band gap in following light absorption district.
Description of drawings
Fig. 1 is the related tandem back electrode photoelectric conversion device schematic diagram with concaveconvex shape body structure surface and two light absorption districts of the utility model.
Fig. 2 is the related tandem back electrode photoelectric conversion device schematic diagram with concaveconvex shape body structure surface and three light absorption districts of the utility model.
Embodiment
Below in conjunction with drawings and Examples the utility model is further specified.
As depicted in figs. 1 and 2, the utility model embodiment comprises: the superficial layer of photoelectric conversion device (1), resilient coating (2) contains district (3) in the light absorption of P-N knot, P electrode/collector grid (4), N electrode/collector grid (5), the transparent insulation interlayer (6,7a), electric septal area (7), light absorption district (7b) between electricity septal area and the light absorption inferior segment, light absorption inferior segment (8), transition zone (9), the collector grid/electrode of p type island region (10), collector grid/the electrode (11) in N type district, antireflection film layer (12), p type island region (P), N type district (N), the width of p type island region (b), the width (c) in N type district.
Embodiment 1
The utility model embodiment 1 (with reference to Fig. 1): the surface of the superficial layer of the photoelectric conversion device of embodiment as shown in Figure 1 (1) has the concaveconvex shape structure, this photoelectric conversion device is by superficial layer (1), resilient coating (2), contain district (3) in the light absorption of P-N knot, P electrode/collector grid (4), N electrode/collector grid (5), transparent insulation interlayer (6), electricity septal area (7), light absorption inferior segment (8), transition zone (9), the collector grid/electrode of p type island region (10), collector grid/the electrode (11) in N type district, antireflection film layer (12) is formed.District (3) and light absorption inferior segment (8) contain p type island region (P) and N type district (N) in the light absorption.
Sunlight (not shown) is injected from the surface of the antireflection film layer (12) of photoelectric conversion device, pass the superficial layer (1) of photoelectric conversion device successively, resilient coating (2), enter district (3) in the light absorption that contains the P-N knot, the sunlight that passes district (3) and electric septal area (7) in the light absorption enters the light absorption inferior segment (8) that contains the P-N knot, returned to into the light absorption inferior segment (8) that contains the P-N knot by transition zone (9) reflection, under collector grid/electrode (5) synergy in the collector grid/electrode (7) of the P electrode/collector grid (4) of electric septal area (7) and N electrode/collector grid (5) and light absorption inferior segment (8) p type island region and N type district, photoelectric conversion device is produced electric energy.
Embodiment 2
The utility model embodiment 2 (with reference to Fig. 2): the surface of the superficial layer of the photoelectric conversion device of embodiment as shown in Figure 2 (1) has the concaveconvex shape structure, this photoelectric conversion device is by superficial layer (1), resilient coating (2), contain district (3) in the light absorption of P-N knot, P electrode/collector grid (4), N electrode/collector grid (5), the transparent insulation interlayer (6,7a), electric septal area (7), light absorption district (7b) between electricity septal area and the light absorption inferior segment, light absorption inferior segment (8), transition zone (9), the collector grid/electrode of p type island region (10), collector grid/the electrode (11) in N type district, antireflection film layer (12) is formed.District (3) and light absorption inferior segment (8) contain p type island region (P) and N type district (N) in the light absorption.
Sunlight (not shown) is injected from the surface of the antireflection film layer (12) of photoelectric conversion device, pass the superficial layer (1) of photoelectric conversion device successively, resilient coating (2), enter district (3) in the light absorption that contains the P-N knot, the sunlight that passes district (3), electric septal area (7) and transparent insulation interlayer (7a) in the light absorption enters the light absorption district (7b) between electric septal area (7) and the light absorption inferior segment (8) successively and contains the light absorption inferior segment (8) that P-N ties, and the sunlight that passes light absorption inferior segment (8) is returned to into the light absorption inferior segment (8) that contains the P-N knot by transition zone (9) reflection.Under collector grid/electrode (11) synergy in the collector grid/electrode (10) of the P electrode/collector grid (4) of electric septal area (7) and the p type island region under N electrode/collector grid (5) and the light absorption inferior segment (8) and N type district, photoelectric conversion device is produced electric energy.Therebetween, the P electrode/collector grid (4) of electric septal area (7) and N electrode/collector grid (5) are gathered the electronic current of distinguishing the light absorption district (7b) between (3) and electric septal area and the light absorption inferior segment in the light absorption simultaneously.
Claims (9)
1, a kind of tandem back electrode photoelectric conversion device, this apparatus surface laminar surface and/or bottom surface are plane or non-planar structures shape, apparatus surface laminar surface or be covered with antireflection film layer, it is characterized in that: electrodeless on this apparatus surface layer, at least be provided with under the superficial layer: resilient coating, contain at least one P-N knot, distinguish in the light absorption of band gap more than or equal to 1.42eV, contain at least one P electrode and/or collector grid, the electric septal area of at least one N electrode and/or collector grid and transparent insulation interlayer, contain at least one P-N knot, band gap is more than or equal to the light absorption inferior segment of 0.67eV, transition zone, the collector grid and/or the electrode in P or N type district.
2, tandem back electrode photoelectric conversion device according to claim 1, it is characterized in that: the thickness of described antireflection film layer is 10～200 nanometers.
3, tandem back electrode photoelectric conversion device according to claim 1, it is characterized in that: described resilient coating is the single or multiple lift film; Its thickness is 10～300 nanometers.
4, tandem back electrode photoelectric conversion device according to claim 1 is characterized in that: the district or the thickness of light absorption inferior segment are 10 nanometers～20 micron in the described light absorption, and the width in p type island region or N type district is 10 nanometers～100 millimeter.
5, tandem back electrode photoelectric conversion device according to claim 1 is characterized in that: described electric septal area thickness is 10 nanometers～20 micron.
6, tandem back electrode photoelectric conversion device according to claim 1, it is characterized in that: described transition zone is the single or multiple lift film; Its thickness is 10～200 nanometers.
7, tandem back electrode photoelectric conversion device according to claim 1 is characterized in that: the collector grid in described P or N type district or the thickness of electrode are smaller or equal to the width in p type island region or N type district.
8, tandem back electrode photoelectric conversion device according to claim 1 is characterized in that: the thickness of described superficial layer is 0.05 micron～5 millimeters.
9, according to claim 1 or 4 described tandem back electrode photoelectric conversion devices, it is characterized in that: between described electric septal area and the light absorption inferior segment so that comprise at least one contain at least one P-N knot, band gap is less than 1.42eV but greater than the light absorption district of 0.67eV, at least one contains the electric septal area of at least one P electrode, at least one N electrode and/or transparent insulation interlayer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200720098193 CN201138663Y (en) | 2007-11-28 | 2007-11-28 | Photoelectric converter for serial back electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200720098193 CN201138663Y (en) | 2007-11-28 | 2007-11-28 | Photoelectric converter for serial back electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201138663Y true CN201138663Y (en) | 2008-10-22 |
Family
ID=40039344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200720098193 Expired - Fee Related CN201138663Y (en) | 2007-11-28 | 2007-11-28 | Photoelectric converter for serial back electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201138663Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832288A (en) * | 2011-11-10 | 2012-12-19 | 郭磊 | Semiconductor voltage transformation structure and chip with same |
| TWI403681B (en) * | 2009-09-07 | 2013-08-01 | Univ Nat Cheng Kung | Solar concentrator |
-
2007
- 2007-11-28 CN CN 200720098193 patent/CN201138663Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI403681B (en) * | 2009-09-07 | 2013-08-01 | Univ Nat Cheng Kung | Solar concentrator |
| CN102832288A (en) * | 2011-11-10 | 2012-12-19 | 郭磊 | Semiconductor voltage transformation structure and chip with same |
| WO2013067953A1 (en) * | 2011-11-10 | 2013-05-16 | Guo Lei | A semiconductor transformer structure and a chip using the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081022 Termination date: 20141128 |
|
| EXPY | Termination of patent right or utility model |