201227166 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於例如液晶顯示裝置等平板顯示器 (Flat Panel Display，以下稱FPD)等之製造中的多調式光罩 之製造方法、及使用上述多調式光罩之圖案轉印方法。 【先前技術】 例如FPD用之薄膜電晶體（Thin Film Transistor，以下稱 TFT)基板係使用於透明基板上形成有包含遮光部及透光部 之轉印圖案之光罩，經過例如5次〜6次之光微影步驟而製 造。近年來’為削減光微影步驟數，而開始使用於透明基 板上形成有包含遮光部、半透光部、及透光部之轉印圖案 之多調式光罩。 【發明内容】 [發明所欲解決之問題] "於上述多調式光罩中，例如，遮光部係於透明基板上將 半透光膜與遮光膜依該順序形成而成，半透光部係將半透 光膜形成於透明基板上而成，透光部可設為透明基板露出 、者又itb處’所明「依該順序」為只要不妨礙钮刻 者即可’亦可於膜間插人有其他I如此之多調式光罩因 必需對半透光膜與遮光膜分別實施特定之圖案化，故藉由 描繪及顯影每項至少進行2次而製造。具體例如， =，準備將半透光膜、遮光膜、及第!抗飯膜於透明基 順序積層而成之空白光罩。然後，對第1讓 實施第-次之描繪及顯影，從而形成覆蓋遮光部之形成區 156467.doc 201227166 域及半透光部之形成區域之第〗抗蝕圖案，將第丨抗蝕圖案 作為遮罩而蝕刻遮光膜及半透光膜。其次，除去第1抗蝕 圖案而形成第2抗蝕膜，對第2抗蝕膜實施第二次之描繪及 ””員影從而七成覆蓋遮光部之形成區域之第2抗银圖案。進 而將第2抗蝕圖案作為遮罩而蝕刻遮光膜，並除去第2抗蝕 圖案。 然而，用於例如FPD用之TFT基板之製造等中之光罩與 半導體製造用之光罩相比為大型，例如一邊為5〇〇mmwj^ 之方形，甚至1邊為超過1〇〇〇mm之方形者最近也不少，故 描繪舄要較長時間。另一方面，欲提高如此之製品之 生產效率且降低價格之要求亦強烈。 因此，發明者著眼於對於描繪及顯影每項至少進行2次 之上述方法提高生產率之要求。又，上述方法中，因於第 1次之描繪與第2次之描繪之間進行顯影、圖案化（蝕刻）步 驟，故必需將自描繪機卸下且藉由上述步驟而處理之光罩 中間體再次安裝於描繪機。於如此之情形時，為消除第^ 次與第2次所描繪之圖案間之偏移而進行描繪，雖讀取藉 由描繪機而形成於遮罩上之對準標記，並以該對準標記^ 置為基準實施利用描繪機之適當之修正並 對準騎），㈣便μ亦難以完切止位置偏 此之對準描繪時所產生之位置偏移例如根據本發明者之研 九有時會產生0.1 μιη〜〇.5 μιη左右，於該情形時，轉印圖案 之形成精度下降。例如，當欲利用如此之多調式光罩製作 液晶顯示裝置用之TFT時，作為設計值本來具有相同之線 156467.doc 201227166 寬之遮光圖案變為起因於上述位置偏移而不同之線寬且 於面内，相當於所產生之上述位置偏移量，而沿線寬產生 分佈。 進而，根據本發明者之見解，形成根據位置不同而抗蝕 殘膜值不同之抗蝕圖案，且藉由利用該抗蝕圖案之減膜可 削減描繪及顯影之次數。具體而言，首先，準備將半透光 膜、遮光膜、及第1抗敍膜於透明基板上依該順序積層而 成之空白光罩。然後，對第丨抗蝕膜實施描繪及顯影，從 而形成覆蓋遮光部之形成區域及半透光部之形成區域、且 半透光部之形成區域中之抗蝕膜之厚度較遮光部之形成區 域中之抗蝕膜之厚度薄之第丨抗蝕圖案。將該第丨抗蝕圖案 作為遮罩而姓刻遮光膜及半透光膜。其次，將第i抗触圖 案減膜並除去半透光部之形成區域中之第丨抗蝕圖案，藉 此，使遮光膜露出，從而形成覆蓋遮光部之形成區域之第 2抗触圖案。進而將第2抗㈣案作為遮罩而飯刻遮光膜， 其後除去第2抗蝕圖案。若使用如此之方法，則於製造包 含透光部、半透光部、遮光部之（即3調式之）多調式光罩 時’僅進行1次描綠步驟即可。 然而，將其應用於現實之生產步驟_,還存在幾處困 難。其一係關於肖大型空白光罩之描繪步財，根據位置 不同而使曝光量發生變化之技術。光罩用之描繪曝光裝置 一般而言無需描繪包含中間色之圖案，因此雖進行用以描 繪之光束掃描，但使曝光量發生變化並不容易。 作為針對上述之解決方法，有以下者。日本專利特開 156467.doc 201227166 2002-189280號公報（專利文獻丨）中，記載有對於空白光 罩，以相對於形成透光部之部分抗蝕劑完全被感光之曝光 量’或以比相對於形成半透光部之部分抗蝕劑完全被感光 之曝光量少之曝光量對抗触膜進行曝光之步驟。又，曰本 專利特開2005-024730號公報（專利文獻2)中，記載有對於 形成半透光部之部分，包含使用電子束描繪機或雷射描繪 機，並利用上述描繪機之解像極限以下之圖案之描繪資料 而進行描繪之抗蝕膜曝光步驟。 而，根據本發明者之研究，不僅進行描繪步驟，而且 進行藉由描繪、顯影所形成之抗蝕圖案之減膜之步驟中亦 存在困難，且發現存在技術性課題。例如，將抗蚀膜減膜 步驟中必$對空白光罩之形成有抗钱膜之整個面内進 行均一之減膜。若根據面内位置不同而產生不均一之減 膜，則抗钮劑之殘膜量變得不均一，且藉由後續步驟之姓 刻而形成之遮光部、或半透光部之線寬相對於設計值發生 變動。因大型光罩為大面積，故不易維持面内之均一性。 作.為阻礙減膜之面㈣—性之因素之_，可列舉影響減膜 之面内均-性之抗蝕劑之減膜量依存於轉印用圖案之形 狀。具體而言’大多情況下在欲獲得之轉印用圖案中，根 據作為最終製品之裝置，有遮光部與半透光部之疏密之分 或遮光部與半透光部之面積比率中有分佈。於該情形 ’ ’例如’存在第1抗钮圖案之稀疏之區域（每單位面積之 幵口面積之比例較大之區域）中減膜速度相對增大 飯圖案之密集之區域(每單位面積之開口面積之比例較： 156467.doc 201227166 =域)中減膜速度相對減少之情形。其結果，存在正確 艢许丁眼“ 付田難且轉印圖案之形成 精度下降之情形。特別是，因FPD用光 ^ ^ ^ 早甲抗银圖案之疏 被差相對較大’故有容易出現減膜速度之不均一性之傾 向。 因此’本發明之目的在於藉由利用抗颠圖案之減膜而削 減描繪及顯影之次數，並且提高抗蚀圖案之減膜速度之面 内均一性且提高轉印圖案之形成精度。 [解決問題之技術手段] 本發明之第1態樣係-種多調式光罩之製造方法，其係 於透明基板上形成包含遮光部、半透光部、及透光部之轉 印圖案者，且藉由下述步驟形成上述透光部、上述半透光 部、及上述遮光部，即，準備將半透光膜、遮光膜、及抗 蝕膜於上述透明基板上依該順序積層而成之空白光罩之步 驟；對上述抗钮膜實施騎及顯影，從而形成覆蓋上述遮 光部之形成區域及上述半透光部之形成區域、且上述半透 光部之形成區域令之上述抗钱膜之厚度較上述遮光部之形 成區域中之上述抗蝕膜之厚度薄之第丨抗蝕圖案之步驟； 將上述第1抗钮圖案作為遮罩進行㈣之第g刻步驟·使 用將上述第1抗㈣案減臈而形成之第2抗㈣案進行触刻 之第2蝕刻步驟，且上述第〗抗蝕圖案之減膜係於上述透光 。1^之形成區域中上述半透光膜或上述抗敍膜露出之狀態下 進行。 本發明之第2態樣係一種多調式光罩之製造方法，其係 156467.doc 201227166 於透明基板上形成包含遮光部、半透光部、及透光部之轉 印圖案者，且包含：準備將半透光膜、遮光膜、及抗蝕骐 於上述透明基板上依該順序積層而成之空白光罩之步驟； 對上述抗蝕膜實施描繪及顯影，形成覆蓋上述遮光部之形 成區域及上述半透光部之形成區域、且上述半透光部之形 成區域中之上述抗蝕膜之厚度較上述遮光部之形成區域中 之上述抗蝕膜之厚度薄之第丨抗蝕圖案之步驟；將上述第夏 抗蝕圖案作為遮罩而蝕刻上述遮光膜，從而使上述半透光 膜之一部分露出之第1蝕刻步驟；將上述第i抗蝕圖案減 膜，且使上述半透光部之形成區域中之上述遮光膜露出， 從而形成覆蓋上述遮光部之形成區域之第2抗蝕圖案之步 驟；將上述第2抗蝕圖案及露出之上述遮光膜作為光罩而 蝕刻上述半透光膜從而使上述透明基板之一部分露出之第 2蝕刻步驟；將上述第2抗蝕圖案作為遮罩而蝕刻露出之上 述遮光膜從而使上述半透光膜之一部分露出之第3蝕刻步 驟’及除去上述第2抗钮圖案之步驟。 本發明之第3態樣係一種多調式光罩之製造方法，其係 於透明基板上形成包含遮光部、半透光部、及透光部之轉 印圖案者，且藉由下述步驟形成上述透光部、上述半透光 部、及上述遮光部，即’準備將半透光膜、遮光膜、及抗 蝕膜於上述透明基板上依該順序積層而成之空白光罩之步 驟，對上述抗蝕膜實施描繪及顯影，形成覆蓋上述遮光部 之形成區域及上述半透光部之形成區域、且上述半透光部 之形成區域中之上述抗蝕膜之厚度較上述遮光部之形成區 156467.doc 201227166 域中之上述抗触膜之厚度薄之第⑽圖案之步驟；將上 述第成㈣案作為遮罩而進行㈣之第w刻步驟·及使 用將上述第1抗_案減膜而形成之第2抗㈣案進行 之第2㈣步驟’·且於形成上述第成敍圖案之步驟中，二 上述透光部之形成區域形成上述轉印圖案中不包含之暫定 抗钮圖案；於上述第1餘刻步驟令，將上述暫定抗敍圖案 作為遮罩，形成暫定遮光膜圖案；於上述第2蝕刻步驟 中’除去上述暫定抗㈣案與上述暫^遮光膜圖案。 本發明之第4態樣係一種多調式光罩之製造方法，其係 於透明基板上形成包含遮光部、半透光部、及透光部之轉 印圖案者’且包含：準備將半透光膜、遮光膜、及抗飯膜 於上述透明基板上依該順序積層而成之空白光罩之步驟； 對上述抗蝕膜實施描繪及顯影，形成覆蓋上述遮光部之形 成區域及上述半ϋ光部之形成區❺、且上述半透光部之形 成區域中之上述抗蝕膜之厚度較上述遮光部之形成區域中 之上述抗姓膜之厚度薄之第丨抗钮圖案之步驟；將上述第1 抗蝕圖案與上述暫定抗蝕圖案作為遮罩而蝕刻上述遮光 膜，從而使上述半透光膜之一部分露出之第丨蝕刻步驟； 將上述第1抗蝕圖案減膜，使上述半透光部之形成區域中 之上述遮光膜露出，並形成覆蓋上述遮光部之形成區域之 第2抗蝕圖案之步驟；將上述第2抗蝕圖案及露出之上述遮 光膜作為遮罩而蝕刻上述半透光膜從而除去上述暫定抗蝕 圖案’並且使上述透光部之形成區域之上述透明基板露出 之第2触刻步驟；將上述第2抗蝕圖案作為遮罩而蝕刻露出 156467.doc •10· 201227166 之上述遮光膜從而使上述半透光膜之一部分露出之第3蝕 刻步驟；及除去上述第2抗蝕圖案之步驟。 本發明之第5態樣係如第4態樣中記載之多調式光罩之製 造方法，其中上述暫定抗蝕圖案之除去係藉由伴隨上述半 • 透光膜之姓刻之剝離而進行。 . 本發明之第6態樣係如第5態樣中記載之多調式光罩之製 造方法’其中上述暫定抗姓圖案之尺寸係線寬為丨叫以 下。 本發明之第7態樣係如第4至箄6態樣中任一項所記載之 多調式光罩之製造方法，其中上述暫定抗蝕圖案之膜厚係 與上述遮光部之形成區域中之上述抗蝕膜之厚度相等。 本發明之第8態樣係如第4至第6態樣中任一項所記載之 多調式光罩之製造方法，其中上述暫定抗蝕圖案之膜厚係 與上述半透光部之形成區域中之上述抗蝕膜之厚度相等。 本發明之第9態樣係如第丨至第8態樣中任一項所記載之 多調式光罩之製造方法，其中上述半透光膜包含含有矽之 材料。 本發明之第1 0態樣係一種圖案轉印方法，其包含下述步 . 驟：經由根據如第1至第9態樣中任一項所記載之製造方法 製造之多調式光罩，對形成於被轉印體上之被轉印抗蝕膜 照射上述曝光光，藉此於上述被轉印抗蝕膜上轉印上述轉 印圖案。 [發明之效果] 根據本發明，可藉由利用抗蝕圖案之減膜而削減描繪及 156467.doc 201227166 顯影之次數，並且描其 捉同抗叙圖案之減膜速度之面内均一性 且提高轉印圖案之形成精度。 【實施方式】 如上所述，多調式光罩之製法方法中，例如，為實現3 調式(透光部、遮光部、半透光部)，必需對透明基板上形 成的2層膜實施圖案化，且必需於先前之製造方法中進行 至少2次之描繪及顯影步驟。進而，於4調式以上之多調式 光罩中必需進行至少2次、或更多次數之描繪、顯影步 驟》因而，期待生產效率、製造成本之改良。進而，由於 複數次之描繪之圖案之相互之位置偏移而引起轉印圖案之 形成精度之下降。因此，本發明者為解決上述課題而致力 於描繪及顯影步驟之次數之削減。 首先，如圖7(a)所例示般，準備將半透光膜1〇1，、遮光 膜102·依該順序形成於透明基板1〇〇，上、且於最上層形成 有抗蝕膜103,之空白光罩i〇b，。然後，如圖7(b)之1〇3p,中 以實線所例示般，對空白光罩10b，所具有之抗蝕膜1〇3,實 施曝光、顯影，從而形成具有例如2段階之厚度之第1抗姓 圖案103p’ 。 第1抗蝕圖案103p'形成為覆蓋遮光部11〇,之形成區域及 半透光部11 5’之形成區域’且半透光部11 5,之形成區域中 之抗触膜103’之厚度較遮光部110’之形成區域中之抗触膜 103'之厚度薄。又，所謂遮光部110'或半透光部us'之形成 區域，係指在欲獲得之多調式光罩中，欲形成遮光部110' 或半透光部115'之區域。 I56467.doc •12- 201227166 然後，將第1抗蝕圖案l〇3p，作為遮罩而蝕刻遮光膜1〇2, 及半透光膜101，。其次，如圖7(b)21〇4p，中以虛線與部分 實線所例示般，將第成触圖案吻，減膜，從而形成覆蓋 遮光部110’之形成區域之第2抗蝕圖案1〇4〆。然後，於圖 7(c)中，例示將第2抗蝕圖案1〇4ρι作為遮罩而蝕刻半透光 膜101’後，將第2抗蝕圖案ι〇4ρ·除去完時之態樣。根據該 方法，可分別將描繪及顯影步驟之次數削減至〖次，且可 解決上述之課題。此處，所謂減膜，係指例如自抗蝕圖案 1〇3ρ’之露出之上部（表面）沿垂直方向使所需量之抗蝕圖案 103ρ'消失’從而使膜厚減少。 上述中第1抗蝕圖案1〇3ρ，之減膜可藉由例如使用電漿灰 化法將由電漿而產生之活性物質例如活性氧供給至第^充 蝕圖案103ρ ’且分解並灰化（ashing)構成抗蝕膜1⑽，之有 機物而進行。然而，根據本發明者之研究，可知該方法中 第1抗蝕圖案l〇3p，之減膜速度之面内均一性不充分。其結 果，正確地進行利用減膜之抗蝕圖案之形狀控制變得困 難，例如，如圖7(02^5所示，可知存在部分之轉印圖案 之尺寸形成得較預定區域小之情形。 因此本發明者就降低減膜速度之面内均一性之理由進行 積極研究。 以下’參照圖說明其理由。 圖6係例示第！抗蝕圖案1031)，之減膜機制之刮面圖。圖6 中，（bl)表示減膜前之第1抗蝕圖案1〇315，之構成，（b2)表示 利用活性氧將第1抗蝕圖案10313，減膜之情形，（b3)表示將 156467.doc -13- 201227166 藉由減膜所獲得之第2抗姓圖案104p,作為遮罩而姓刻遮光 膜從而形成轉印圖案之情形。 圖（1)所示’第1抗韻圖案1〇3〆包含稀疏之區域（例 。每單位面積之開口面積之比例較大之區域）與密集之 ° ( 'J 士每單位面積之開口面積之比例較小之區域）。 具體而吕，例如透光部120,(參照圖7(c))之形成區域相當於 品域遮光部U〇'(參照圖7(C))或半透光部115·(參照 圖7⑷)之形成區域相當於密集之區域。 处於稀疏之區域令，因作為減膜對象之抗蝕材料 (第1抗姓圖案103〆)相對較少，故活性氧之消耗並無那麼 b稀疏之區域中，易成為供給至第1抗蝕圖案 1〇3ρ之母單位面積之活性氧之供給量較藉由將第1抗㈣ 案103ρ減膜所消耗之每單位面積之活性氧之消耗量多之狀 態。即’於稀疏之區域中第！抗钮圖案1〇3ρ，之減膜速度容 易相對地增大。 對此’於密集之區域中，因作為減膜對象之抗蝕材料 (第1抗蝕圖案1〇3〆）相對充足地存在，故活性氧之消耗量 良多。因此’密集之區域中’易成為供給至第"充蝕圖案 1〇3Ρ’之每單位面積之活性氧之供給量較藉由將第】抗姓圖 案⑻Ρ’減膜所消耗之每單位面積之活性氧之消耗量不充分 之狀態。即，於密集之區域第m姓圖案ι〇3ρ.之減膜速度 谷易相對地減少。 如此，可知存在受到作為減膜對象之第i抗姓圖案⑼〆 之形狀之影響，從而減膜速度之面内均一性下降之情形。 I56467.doc •14· 201227166 於該情形時，藉由減膜速度之面内均一性下降，正確地進 订利用減膜之形狀控制變得困難，如圖6(b3)所例示般轉印 圖案之形成精度下降。特別是，FPD用光罩中因抗#圖案 之疏密差相對較大，故有易顯著地出現減膜速度之不均一 性之傾向。又，減膜速度之面内均一性之下降不僅出現於 抗蝕圖案之疏密差較大之情形時，亦顯著地出現於抗蝕圖 案之開口面積自身之差較大之情形。 因此本發明者就提高減膜速度之面内均一性之方法進一 步進行積極研究。其結果發現於減膜處理步驟中，將活性 氧之消耗量於面内均一化之方法。即，最終獲得以下見 解：於活性氧相料易變得過量之區域（抗姓膜之露出較 少之區域），使與活性氧反應之材料露出，藉此，使供給 至第1抗餘圖案H)3p，之活性氧之—部分消耗，從而可提高 減膜速度之面内均^性。 根據本發明者之研究，藉由採用如此之方法，形成於多 調式光罩之半透光部與遮光部之圖案線寬（即，半透光膜 圖案與遮光膜圖案之線寬）可接近於遮罩之設計資料所提 供之設計值。又，即便設計值與實際之線寬產生特定之差 異，亦可使該產生之差異於面内均一。 本發明係基於本發明者所提出之上述見解者。 <本發明之第1實施形態> 以下參舨圖1及圖2對本發明之第丨實施形態進行說 月圖1係本第1實施形態之多調式光罩i〇之製造步驟之流 程圖。圖2係表示使用多調式光罩1〇之圖案轉印方法之剖 156467.doc •15- 201227166 面圖。 (i)多調式光罩之製造方法 (空白光罩準備步驟） 首先’如圖1(a)所例示般’準備將半透光膜1〇ι、遮光膜 102依該順序形成於透明基板1〇〇上、且於最上層形成有抗 姓膜103之空白光罩1 〇b。 透明基板100主要由作為包含含有例如石英（Si〇2)玻璃、 或 Si02、Al2〇3、B2〇3、R〇(R為鹼 土金屬）、r2〇(r2為鹼金 屬）等低脹玻璃等之平板而構成。透明基板1〇〇之主面（正面 及背面）經研磨等平坦且平滑地構成。透明基板1 〇〇可設為 例如一邊為2000 mm〜2400 mm左右之方形。透明基板1〇〇 之厚度可設為例如3 mm~20 mm左右。 半透光膜101包含含有鉬（Mo)或鈕（Ta)等金屬材料與石夕 (Si)之材料’且包含例如MoSi、MoSix、MoSiN、 MoSiON、MoSiCON、TaSix等。半透光膜1〇1構成為可使 用氟（F)系之|虫刻液（或钮刻氣體）而進行触刻。又，半透光 膜1 〇 1具有對包含含有硝酸鈽銨（(NH4)2Ce(N03)6)及過氣酸 (HCIO4)之純水之鉻用蝕刻液之蝕刻耐性，且作為如後述 般使用鉻用蝕刻液蝕刻遮光膜102時之蝕刻終止層而發揮 作用。 遮光膜102實質上含有鉻（Cr)。又’若於遮光膜1〇2之表 面積層有Cr化合物（CrO、CrC、CrN等）（未圖示），則遮光 膜102之表面可具有反射抑制功能。遮光膜1 〇2構成為可使 用上述之鉻用蝕刻液而進行蝕刻。 156467.doc -16- 201227166 抗蝕膜103可由正型光阻劑材料或負型光阻劑材料而構 成。於以下之說明中，將抗蝕膜1〇3作為由正型光阻劑材 料而形成者。抗蝕膜103可使用例如狹縫塗佈機或旋轉塗 佈機等而形成。 (第1抗蝕圖案形成步驟） 其次’對空白光罩i〇b利用雷射描繪機等進行描緣曝 光，使抗蝕膜1 03感光，將顯影液供給至抗蝕膜丨〇3並進行 顯影，從而形成覆蓋遮光部110之形成區域及半透光部ιΐ5 之形成區域之第1抗蝕圖案l〇3p。將形成有第1抗蝕圖案 1 〇3p之狀態例示於圖1 (b)。如圖1 (b)所示，第i抗钱圖案 l〇3p形成為半透光部U5之形成區域中之抗蝕膜ι〇3之厚度 較遮光部110之形成區域中之抗蝕膜1〇3之厚度薄。又所 謂遮光部110或半透光部115之形成區域係指欲獲得之多調 式光罩10中，欲形成遮光部11〇或半透光部115之區域。 如此，為形成厚度不同之第1抗蝕圖案103p，可使用例 如以下之方法。根據以下之方法，可藉由丨次描繪與丨次顯 影處理而形成具有2個以上之殘膜量之第1抗钱圖案ι〇3ρ。 具體而言，於準備上述之空白光罩l〇b進行描繪時，於形 成透光部120之區域，應用使抗姓膜1 〇3完全感光之曝光 量’又’於形成半透光部115之區域，應用較使抗蝕膜ι〇3 完全感光少之曝光量。就該描繪方法之詳細情況，以下舉 出2個例子進行詳細敍述。 (a)利用半劑量描繪之方法 將編排有遮光部110、透光部120及半透光部115之全部 156467.doc 17 201227166 之圖案資料之遮罩圖案之合成資料以如圖8⑷所示般，包 a遮光。p資料11Qd、透光部資料、及半透光部資料 115d之情形作為例子。於該情形時，將遮罩圖案之合成資 料刀離為圖8(b)所示之遮光部資料110d及透光部資料 12〇d、與圖8(c)所示之半透光部資料115d。此處，上述資 料之分離時，遮光部資料u〇d可包含於圖8(c)之半透光部 資料側。於使用正型抗蝕劑之情形時，因遮光部資料丨 為無法進行描繪之部分，故無論根據哪一種之資料分離方 法於以後之描繪步驟中表示相同之結果，故不會產生問 題。而且，以抗蝕膜103可完全除去之曝光量〇 〇〇%)對透 光部120之形成區域進行描繪後，以抗蝕膜1〇3完全被感光 之曝光量之大約一半之曝光量對半透光部U5之形成區域 進行描繪，藉此’可進行圖8(a)所示之圖案之描繪。再 者’就透光部120之形成區域與半透光部U5之形成區域之 描繪之順序而且，雖順序不同，但哪一個在先均可。於抗 蝕膜103上（正抗蝕劑上之描繪例）描繪上述圖8(a)所示之描 緣圖案時之曝光量之分佈如圖9所示。即，區域c(透光部 120之形成區域）之曝光量為wo%，區域a(半透光部115之 形成區域）之曝光量為50。/。’區域b(遮光部11〇之形成區域） 之曝光量為0%(未曝光）。半透光部之曝光量並不限定於上 述之值，例如可設為30%以上70%以下。只要為該範圍， 則抗蝕殘膜量作為蝕刻時之遮罩不會產生不良，且可在明 確保持抗蝕膜之較厚之部分與較薄之部分之邊界之狀態下 進行精度之較高之減膜。 156467.doc •18· 201227166 而如作為圖9之I-Ι剖面圖的圖i〇(a)所示，以圖9所 不之曝光分佈進行描繪之情形時，以區域B未曝光，區域 A曝光、顯影後之膜厚為區域]3之殘膜值之大約一半之方 式調節描繪時之曝光量。於區域c進行抗蝕圖案化時，提 供抗蝕劑完全被除去之足夠之曝光量。例如，作為此時之 才田繪方法，利用雷射描繪機以曝光量100%之光量進行區 域c之祸繪後，以曝光量5〇%左右之光量進行區域a之描 繪。就區域A、C之描繪順序而言哪一個在先均可。 其次，如圖10(b)所示般，以具有膜厚差之方式對抗蝕 膜103進行顯影。此時，抗蝕膜103之膜厚為區域A係區域 B之大約一半左右，區域c為完全被除去之狀態。又，此 處，雖將半透光部115之形成區域（區域A)之曝光量設為 50%，但根據所需之殘膜值，可於例如2〇%〜8〇%左右之範 圍内進行變更。藉由如此般變更曝光量，可以顯影後成為 所而之殘膜值之方式形成區域A。本第丨實施形態中，可於 如此般一個步驟中連續地進行描繪。 (b)利用未解像圖案描續·之方法 其次，對其他抗蝕圖案形成方法進行說明。於該方法 中，亦使用上述空白光罩l〇b，並使用雷射描繪機等進行 描繪。描繪圖案如作為一例圖12所示般，包含遮光部圖案 110a、110b、透光部圖案12〇p、及半透光部圖案丨丨祚。此 處，半透光部圖案115p為形成有包含使用之描繪機之解像 極限以下之微細圖案（線與間隙）之遮光圖案U5a、及透過 圖案115b之區域。例如，若使用之雷射描繪機之解像極限 156467.doc -19- 201227166 為2.0 μιη，則圖12中半透光部圖案115p中之透過圖案n5b 之間隙寬度可設為未滿2.0 μιη，且可將遮光圖案U5a之線 寬設為描繪機之解像極限以下之未滿2 . 〇 μιη。又，於線與 間隙圖案之情形時，可根據將線寬設為多少，調節藉由該 圖案進行曝光時之曝光量，並可最終控制形成半透光部 115之部分上之抗蝕膜1〇3之殘膜值。例如，線寬可設為未 滿描繪機之解像最小線寬之i/2，例如ι/8〜1/3。 使用包含如此之遮光部圖案1 1 〇a、1 1 〇b、透光部圖案 120p、及半透光部圖案115p之圖案之描繪資料（於圖丨之之 圖案之情形時，例如較佳為利用合成透光部圖案丨2〇p之資 料與半透光部圖案115p之資料之1種資料）進行一次描繪。 將此時之曝光量作為形成有透光部丨2〇之區域之抗蚀膜丨〇3 充为地被感光之曝光量。於是，於形成有透光部12〇之區 域（圖11所示之C區域）中，抗蝕膜1〇3充分地被感光；於形 成有遮光部110之區域（圖11所示之B區域）中，抗姓膜1〇3 為未曝光（未曝光）狀態。進而’於形成有半透光部115之區 域（圖11所示之A區域）中，因上述遮光圖案1153無法利用 描繪機解像’故無法描繪其線寬，作為整體之曝光量變得 不足。即’於半透光部115之形成區域中可獲得與減少該 形成區域整體之曝光量並對抗蝕膜1〇3進行曝光相同之效 果。描緣後，若將其以特定之顯影液進行顯影，則空白光 罩l〇b上形成有遮光部ii〇(b區域）與半透光部115(A區域）中 抗触膜103之殘膜值不同之第1抗蝕圖案ι〇3ρ(參照圖 11(b))。半透光部115之形成區域中，因實際之曝光量較抗 156467.doc •20· 201227166 蝕膜103完全被感光之曝光量少’故若對抗蝕膜ι〇3進行顯 影，則無法完全溶解’且以較未曝光之遮光部11 0之抗蚀 膜103薄之膜厚而殘存。又，透光部120中，抗钮膜1.成 為完全被除去之狀態。 ' 又，包含2個以上之殘膜量之抗蝕圖案之形成方法並不 限定於上述。可藉由一面進行描繪機之光束掃描，一面根 據掃描區域變更其強度之方法等上述以外之方法根據抗触 膜103之位置進行不同之曝光量之描繪。 (第1钱刻步驟） 其次’如圖1 (C)所示般’將形成之第1抗蝕圖案i 03p作為 遮罩’蝕刻遮光膜1 02從而形成遮光膜圖案1 〇2p。遮光膜 102之姓刻可將上述之鉻用飯刻液利用喷霧方式等方法供 給至遮光膜102而進行濕式触刻。此時，基底之半透光膜 101作為钱刻終止層而發揮作用。如此，將形成有遮光膜 圖案102p之狀態例示於圖i(c)。 (第2抗蝕圖案形成步驟） 其次’將第1抗蚀圖案1 〇3p減膜，而使半透光部115之形 成區域中之遮光膜1〇2露出。此時，抗蝕膜103之較厚之遮 • 光部110之形成區域中殘留有抗蝕膜103。藉此，形成覆蓋 • 遮光部110之形成區域之第2抗蝕圖案1 〇4p。將其狀態例示 於圖1(d)。 第1抗触圖案l〇3p之減膜可使第1抗蝕圖案1〇3p灰化而進 行°例如’使氧（〇2)氣等反應性氣體之電漿產生，利用產 生之活性氧將作為有機物之抗蝕劑分解為c〇x& h2〇等並 156467.doc 201227166 除去，藉此，可進行減膜。若如此般將活性氧供給至第】 抗姓圖案103p，則可分解構成抗钮膜i 之有機物並進行 減膜。作為反應性氣體，可使用例如〇3氣體或氣體。… 氣體可藉由利用例如公知之真空紫外線（Vacuum Ultra-Violet : 以下稱 VUV) 照 射裝置 、或準分子11乂燈 、低壓水 銀燈等光照射，或電漿照射使空氣中之氧（〇2)臭氧（〇3)化 而產生。 此處所明活性氧，可認為係指例如除〇3自身以外，包含 於電黎·化之〇3氣體或〇2氣體中之經基自由基（Η〇·)、或包 含反應性氣體中存在之為與抗触膜103發生反應而具有充 分之活性之氧原子（0)之化學物種全體。 然，如上所述，於藉由供給活性氧而將第丨抗飯圖案 1〇3ρ減膜之情形時’根據第i抗蝕圖案1〇3ρ之形狀，存在 活性氧之供給量與消耗量之平衡於面内變得不均一從而減 膜速度之面内均一性下降之情形。即，第i抗蝕圖案丨〇3ρ 於稀疏之區域中，存在減膜速度相對地增大之情形。 對此’本第1實施形態中，於抗蝕膜103之露出較少之區 域中’於具有消耗活性氧之效果之半透光膜1〇1露出之狀 態下將第1抗蝕圖案1〇3ρ減膜《藉此使供給至第1抗蝕圖案 1 〇3ρ之活性氧之一部分消耗，不論抗蝕圖案之疏密，活性 氧之供給量與消耗量之平衡於面内變得均一，從而可提高 減膜速度之面内均一性。圖4係表示本第1實施形態之第又 抗蝕圖案103ρ之減膜機制之剖面圖。圖4中，表示減膜 前之第1抗飯圖案l〇3p之構成；（b2)表示利用活性氧將第i 156467.doc -22- 201227166 抗蝕圖案ι〇3ρ減膜之情形；（b3)表示將藉由減膜所獲得之 第2抗蝕圖案10415作為遮罩而形成轉印圖案之情形。如圖4 所不，根據本第1實施形態，於稀疏之區域將半透光膜 露出並進行配置，藉此，可抑制於稀疏之區域及密集之區 域之各者所消耗之每單位面積之活性氧之消耗量之差。 即，使供給至第1抗蝕圖案103p之活性氧之一部分藉由露 出之半透光膜101而消耗。然後，藉由將第！抗蝕圖案ι〇3ρ 減膜所消耗之每單位面積之活性氧之消耗量之面内之差能 夠以藉由半透光膜1〇1所消耗之每單位面積之活性氧之$ 耗量而填補。其結果，可提高減膜速度之面内均一性，且 可正確地進行藉由減膜而形成之第2抗蝕圖案ι〇4ρ之形狀 控制。X，半ϋ光膜101所具有之活性氧之消耗效果係藉 由使包含於半透光膜101之8丨與活性氧發生反應，從而活 性氧被si所捕捉，或因活性氧與半透光膜1〇1表面之間所 產生之相互作用使活性氧失活而產生。 (第2蝕刻步驟） 其-人，將第2抗蝕圖案1 〇4p及露出之遮光膜1〇2作為遮 罩，蝕刻半透光膜101而形成半透光膜圖案1〇lp ,從而使 透明基板100部分露出。半透光膜1〇1之蝕刻可藉由將氟 (F)系之蝕刻液（或蝕刻氣體）供給至半透光膜1〇1而進行。 如此，將形成有半透光膜圖案1〇lp之狀態例示於⑷。 (第3蝕刻步驟） 繼而，將第2抗敍圖案叫作為遮罩，進而触刻遮光膜 102從而使半透光膜1〇1露出。遮光膜1〇2之蝕刻可藉由將 156467.doc -23· 201227166 上述之鉻用蝕刻液供給至遮光膜102而進行。此時，基底 之半透光膜101作為蝕刻終止層而發揮作用。將第3蝕刻步 驟所實施之狀態例示於圖1(f)。 (第2抗蝕圖案除去步驟） 然後，除去第2抗蝕圖案ι〇4ρ，從而完成本第1實施形態 之多調式光罩10之製造。第2抗触圖案刚卩可藉由使剝離 液等與第2抗蝕圖案104p接觸而除去。將除去第2抗蝕圖案 之狀態例示於圖1(g)。 藉由以上，完成如例示於圖1(g)之多調式光罩1〇之製造 步驟。圖1(g)所示之多調式光罩10係用於例如平板顯示器 (FPD)用之薄膜電晶體（TFT)基板之製造等。然，圖1(g)係 例示多調式光罩之積層結構者，實際之圖案未必與此相 同。 多調式光罩10包含之遮光部110、半透光部115、及透光 部120係構成為相對於具有例如i線〜g線之範圍内之代表波 長之曝光光，分別具有特定之範圍内之透過率。即，遮光 部110構成為使曝光光遮蔽（光透過率大約為〇%)，透光部 120構成為使曝光光大約透過1〇〇%。且，半透光部ιι5構成 為例如曝光光之透過率為20%〜80%(將足夠寬之透光部12〇 之透過率設為100%時，以下同樣），較佳為減少至 3 0/〇〜60%左右。又，所謂丨線（365 nm)、h線⑽5㈣、g線 (436 nm)’係指水銀（Hg)之主要之發光光譜，此處所謂代 表波長係指i線、h線、g線中任一之任意之波長。又，相 對於i線〜g線中任一之波長，更佳為上述透過率者。 156467.doc -24· 201227166 (2)對被轉印體之圖案轉印方法 圖2中例示根據使用多調式光罩1〇之圖案轉印步驟而形 成於被轉印體30上之抗蝕圖案302p(實線部）之部分剖面 圖。抗触圖案302p係藉由對作為形成於被轉印體3〇上之被 轉印抗蝕膜之正型抗蝕膜302(虛線部與部分實線部）經由多 調式光罩10照射曝光光’並進行顯影而形成。被轉印體3 〇 包含基板300及於基板300上依序積層之金屬薄膜或絕緣 層、半導體層等任意之被加工層301，正型抗钮膜302係於 被加工層301上預先以均一之厚度而形成者。又，構成被 加工層301之各層亦可構成為對各層之上層之蝕刻液（或蝕 刻氣體）具有耐性。 若經由多調式光罩1 0對正型抗蝕膜3 〇2照射曝光光，則 遮光部110中不透過曝光光，又，曝光光之光量依半透光 部11 5、透光部120之順序階段性地增加。而且，正型抗鞋 膜302係於與遮光部11 〇、半透光部！〗5之各者相對應之區 域膜厚依序變薄，於與透光部12〇對應之區域被除去。如 此，被轉印體30上形成有膜厚階段性地不同之抗蝕圖案 302p ° 一旦形成抗蝕圖案302p，則對露出在未由抗蝕圖案3〇2p 所覆蓋之區域（與透光部120對應之區域）之被加工層3〇1自 表面側依序進行蝕刻並將其除去。然後，將抗蝕圖案3〇2p 灰化（減膜）並除去膜厚較薄之區域（與半透光部丨15對應之 區域），依序蝕刻並除去重新露出之被加工層3〇]^如此， 藉由使用膜厚階段性地不同之抗蝕圖案3〇2p，實施先前之 156467.doc -25- 201227166 光罩2枚之步驟，可削減光罩枚數，且可簡化光微影法步 驟。 (3)本第1實施形態之效果 根據本第1實施形態，發揮以下所示之1個或複數個作 用。 根據本第1實施形態，藉由利用第1抗蝕圖案l〇3p之減 膜，可削減描繪及顯影步驟之次數。藉此，可提高多調式 光罩10之生產_，且可降低製造成本。X，於形成3調式 之轉印圖㈣’可防止2種（遮光膜®案化與半透光膜圖案 化）圖案間之位置偏移，故可抑制轉印圖案之形成精度之 下降。 又，根據本第1實施形態，於抗蝕劑減膜步驟之時，遍 及面内而配置與活性氧反應之物質或介質。即，於抗蝕膜 1〇3之露出相對較少之透光部12〇中，為使半透膜露 出，故若使該半透光膜101中含有Si等可與活性氧反應 者，則面内所消耗之活性氧之多少產生較大之不均一。換 言之，露出之半透光膜101將代替第丨抗蝕圖案ι〇3ρ，而使 產生之活性氧之一部分消耗。又，半透光膜101較佳為包 含含有Mo等金屬材料與Si之材料。藉此，能夠以藉由半透 光膜101所消耗之每單位面積之活性氧之消耗量填補藉由 將第1抗蝕圓案103p減膜所消耗之每單位面積之活性^之 消耗量之面内之差，並且將第旧钱圖案叫減膜。又， 為使供給至第1抗蝕圖案103p之活性氧之一部分消耗，。[Technical Field] The present invention relates to a method for manufacturing a multi-tone mask for use in manufacturing a flat panel display such as a liquid crystal display device (Flat Panel Display, hereinafter referred to as FPD), and the like. The pattern transfer method using the above-described multi-tone mask is used. [Prior Art] For example, a thin film transistor (hereinafter referred to as TFT) substrate for FPD is used for a photomask having a transfer pattern including a light shielding portion and a light transmitting portion formed on a transparent substrate, for example, 5 times to 6 Manufactured by the second light lithography step. In recent years, in order to reduce the number of photolithography steps, a multi-tone mask having a light-shielding portion, a semi-transmissive portion, and a transfer pattern of a light-transmitting portion has been formed on a transparent substrate. [Problem to be Solved by the Invention] In the above-mentioned multi-tone mask, for example, the light shielding portion is formed on a transparent substrate, and the semi-transmissive film and the light shielding film are formed in this order, and the semi-transmissive portion is formed. The semi-transmissive film is formed on a transparent substrate, and the transparent portion can be exposed as a transparent substrate, and the "best" in the order of "it" can be used as long as it does not interfere with the button. Inter-inserted people have such a multi-modulation mask that it is necessary to perform specific patterning on the semi-transmissive film and the light-shielding film, and thus it is manufactured by drawing and developing each item at least twice. Specifically, for example, a blank mask in which a semi-transparent film, a light-shielding film, and a first anti-rice film are sequentially laminated on a transparent substrate is prepared. Then, the first and second drawing and development are performed to form a first resist pattern covering the formation region of the light-shielding portion 156467.doc 201227166 and the semi-transmissive portion, and the second resist pattern is used as the resist pattern. The light shielding film and the semi-transmissive film are etched by the mask. Then, the first resist pattern is removed to form a second resist film, and the second resist film is subjected to a second drawing and a "" shadow to form a second silver resist pattern covering the formation region of the light blocking portion. Further, the second resist pattern is etched as a mask, and the second resist pattern is removed. However, the photomask used in the manufacture of a TFT substrate for, for example, FPD is large compared to a photomask for semiconductor manufacturing, for example, a square of 5 〇〇mmwj^ on one side, and even more than 1 〇〇〇mm on one side. The square has been a lot lately, so it takes a long time to portray it. On the other hand, there is a strong demand to increase the productivity of such products and to lower prices. Therefore, the inventors have focused on the demand for productivity improvement by the above-described method of drawing and developing each item at least twice. Further, in the above method, since the development and patterning (etching) steps are performed between the first drawing and the second drawing, it is necessary to remove the mask from the drawing machine and process it by the above steps. The body is again mounted on the drawing machine. In such a case, in order to eliminate the offset between the patterns drawn by the second and second times, the alignment marks formed on the mask by the drawing machine are read, and the alignment is performed. The mark ^ is set as a reference to perform appropriate correction by the drawing machine and is aligned with the rider. (4) It is also difficult to complete the positional shift caused by the positional deviation of the position, for example, according to the researcher of the present invention. When it is about 0.1 μm to 〇.5 μιη, in this case, the formation accuracy of the transfer pattern is lowered. For example, when a TFT for a liquid crystal display device is to be fabricated by using such a multi-tone mask, the light-shielding pattern having the same line 156467.doc 201227166 as a design value becomes a line width different from the above positional shift and In the plane, it corresponds to the above-mentioned positional shift amount generated, and the distribution is generated along the line width. Further, according to the findings of the present inventors, a resist pattern having different resist residual film values depending on the position is formed, and the number of times of drawing and development can be reduced by using the resist pattern. Specifically, first, a semi-transmissive film, a light-shielding film, and a first resist film are laminated on the transparent substrate in this order. Then, the second anti-resist film is drawn and developed to form a region where the light-shielding portion is formed and the semi-transmissive portion is formed, and the thickness of the resist film in the region where the semi-transmissive portion is formed is smaller than that of the light-shielding portion. A thin ruthenium resist pattern of a thin resist film in the region. The second resist pattern is used as a mask to etch a light-shielding film and a semi-transmissive film. Then, the ith resist pattern is removed by the ith anti-contact pattern, and the 丨 resist pattern in the formation region of the semi-transmissive portion is removed, whereby the light-shielding film is exposed to form a second anti-contact pattern covering the formation region of the light-shielding portion. Further, the second anti-fourth film was used as a mask to etch the light-shielding film, and then the second resist pattern was removed. When such a method is used, it is only necessary to perform the greening step once when manufacturing the multi-tone mask including the light-transmitting portion, the semi-transmissive portion, and the light-shielding portion. However, applying it to the actual production steps _, there are still several difficulties. It is a technique for depicting the amount of exposure of a large blank mask of Xiao, and changing the exposure according to the position. The drawing exposure apparatus for a photomask is generally not required to draw a pattern including an intermediate color. Therefore, although the beam scanning for drawing is performed, it is not easy to change the exposure amount. As a solution to the above, there are the following. Japanese Patent Laid-Open No. 156467.doc No. 201227166 No. 2002-189280 (Patent Document No.), the disclosure of the disclosure of the disclosure of the entire disclosure of the disclosure of the entire disclosure of The portion of the resist that forms the semi-transmissive portion is exposed to the touch film by the amount of exposure in which the exposure is less. In the Japanese Patent Publication No. 2005-024730 (Patent Document 2), it is described that the portion in which the semi-transmissive portion is formed includes an electron beam drawing machine or a laser drawing machine, and the image of the drawing machine is used. A resist film exposure step of depicting the pattern of the pattern below the limit. On the other hand, according to the study by the present inventors, it is difficult to perform not only the drawing step but also the step of reducing the film formed by drawing and developing the resist pattern, and it has been found that there is a technical problem. For example, in the step of reducing the film thickness of the resist film, a uniform film is formed on the entire surface of the blank mask formed with the anti-money film. If the film is unevenly formed according to the in-plane position, the residual film amount of the anti-button agent becomes non-uniform, and the line width of the light-shielding portion or the semi-transmissive portion formed by the surname of the subsequent step is relative to The design value has changed. Since the large-sized photomask has a large area, it is difficult to maintain the uniformity in the plane. In order to prevent the surface of the film from being thinned (4), the amount of the film which affects the uniformity of the film in the surface of the film is dependent on the shape of the transfer pattern. Specifically, in many cases, in the transfer pattern to be obtained, depending on the device as the final product, there is a difference between the light-shielding portion and the semi-transmissive portion or the area ratio between the light-shielding portion and the semi-transmissive portion. distributed. In this case, 'for example, there is a region where the first anti-button pattern is sparse (the region where the ratio of the area of the cornea per unit area is large), and the film-reducing speed is relatively increased in the dense area of the rice pattern (opening per unit area) The ratio of the area is relatively small: 156467.doc 201227166 = domain) The film is reduced in relative speed. As a result, there is a case where the correction of the shape of the transfer pattern is lowered, and the accuracy of the formation of the transfer pattern is lowered. In particular, since the light for the FPD is relatively large, the texture of the anti-silver pattern is relatively large. There is a tendency for the film formation speed to be non-uniform. Therefore, the object of the present invention is to reduce the number of times of drawing and development by using a film-reducing film, and to improve the in-plane uniformity of the film-removing speed of the resist pattern. [Improvement of the formation of the transfer pattern] [Technical method for solving the problem] The first aspect of the invention is a method for manufacturing a multi-tone mask, comprising: forming a light shielding portion, a semi-light transmission portion, and a transfer pattern of the light transmitting portion, wherein the light transmitting portion, the semi-light transmitting portion, and the light blocking portion are formed by the following steps, that is, preparing the semi-transmissive film, the light shielding film, and the resist film a step of stacking a blank mask on the transparent substrate; and performing the riding and developing on the anti-button film to form a formation region covering the light shielding portion and a formation region of the semi-light transmission portion, and the semi-transparent Shape of the ministry a step of forming a second resist pattern in which the thickness of the anti-money film is thinner than the thickness of the resist film in the formation region of the light-shielding portion; and the first anti-button pattern is used as a mask to perform (g) In the engraving step, the second etching step of the second anti-fourth case formed by reducing the first anti-fourth case is performed, and the film of the first resist pattern is formed by the light transmission. In the region, the semi-transmissive film or the anti-supplement film is exposed. The second aspect of the present invention is a method for manufacturing a multi-mode mask, which is formed on a transparent substrate and includes a light-shielding portion, 156467.doc 201227166 a semi-transmissive portion and a transfer pattern of the light-transmitting portion, and comprising: a step of preparing a semi-transmissive film, a light-shielding film, and a blank mask formed by laminating the resist on the transparent substrate; The resist film is drawn and developed to form a region in which the light-shielding portion is formed and a region in which the semi-transmissive portion is formed, and a thickness of the resist film in the region where the semi-transmissive portion is formed is smaller than that of the light-shielding portion Forming the above in the area a step of etching a thin ruthenium resist pattern; wherein the first etch step is performed by etching the light-shielding film as a mask to expose a portion of the semi-transmissive film; The resist pattern is reduced, and the light-shielding film in the formation region of the semi-transmissive portion is exposed to form a second resist pattern covering the formation region of the light-shielding portion; and the second resist pattern is exposed and exposed The light-shielding film is used as a mask to etch the semi-transmissive film to expose a portion of the transparent substrate, and the second resist pattern is used as a mask to etch the exposed light-shielding film to make the semi-transparent film a third etching step of exposing one of the light films and a step of removing the second button pattern. The third aspect of the present invention is a method for manufacturing a multi-tone mask, comprising forming a light shielding portion on a transparent substrate; a semi-transmissive portion and a transfer pattern of the light-transmitting portion, wherein the light-transmitting portion, the semi-transmissive portion, and the light-shielding portion are formed by a process of preparing a semi-transparent film and covering a step of depositing and developing the resist film on the transparent substrate in the order of the blank mask formed on the transparent substrate to form a region covering the light shielding portion and forming the semi-transmissive portion a step of the (10) pattern in which the thickness of the resist film in the region where the semi-transmissive portion is formed is thinner than the thickness of the anti-touch film in the region 156467.doc 201227166 of the light-shielding portion; In the case of (4), the fourth step (4) and the second (fourth) step of using the second anti-fourth film formed by subtracting the film from the first anti-film are used as the mask. In the step, the formation region of the light-transmitting portion forms a tentative anti-buckle pattern that is not included in the transfer pattern; and the tentative anti-slip pattern is used as a mask in the first remaining step to form a tentative light-shielding film pattern; In the second etching step, the tentative anti-fourth (four) case and the temporary light-shielding film pattern are removed. A fourth aspect of the present invention is a method of manufacturing a multi-mode mask, which is characterized in that a transfer pattern including a light-shielding portion, a semi-transmissive portion, and a light-transmitting portion is formed on a transparent substrate and includes: preparing to be semi-transparent a step of forming a blank mask formed by laminating the light film, the light shielding film, and the anti-rice film on the transparent substrate in this order; drawing and developing the resist film to form a formation region covering the light shielding portion and the semiconductor layer a step of forming a light portion, and a step of forming a third anti-button pattern in which a thickness of the resist film in the formation region of the semi-transmissive portion is thinner than a thickness of the anti-surname film in a region where the light-shielding portion is formed; a first etching process in which the first resist pattern and the tentative resist pattern are used as a mask to etch the light-shielding film to partially expose the semi-transmissive film; and the first resist pattern is thinned to make the half a step of exposing the light-shielding film in the formation region of the light-transmitting portion to form a second resist pattern covering the formation region of the light-shielding portion; and using the second resist pattern and the exposed light-shielding film as a mask a second engraving step of etching the semi-transmissive film to remove the tentative resist pattern ′ and exposing the transparent substrate in the region where the light-transmitting portion is formed; and etching the second resist pattern as a mask to expose 156467. Doc • 10·201227166 The third etching step of exposing one of the semi-transmissive films to the light-shielding film; and the step of removing the second resist pattern. A fifth aspect of the invention is the method of producing a multi-mode mask according to the fourth aspect, wherein the removal of the tentative resist pattern is performed by peeling off the last half of the light-transmissive film. A sixth aspect of the present invention is the method of manufacturing a multi-tone mask as described in the fifth aspect, wherein the tentative anti-surname pattern has a line width which is squeaked below. The method of manufacturing the multi-mode mask according to any one of the fourth to sixth aspect, wherein the film thickness of the tentative resist pattern and the formation region of the light shielding portion are The above resist films have the same thickness. The eighth aspect of the present invention is the method of manufacturing the multi-tone mask according to any one of the fourth to sixth aspect, wherein the film thickness of the provisional resist pattern and the formation region of the semi-transmissive portion are The thickness of the above resist film is equal. The ninth aspect of the invention, wherein the semi-transmissive film comprises a material containing ruthenium, according to any one of the first to eighth aspects. The tenth aspect of the present invention is a pattern transfer method comprising the steps of: a multi-tone mask manufactured according to the manufacturing method according to any one of the first to ninth aspects, The transfer resist formed on the transfer target is irradiated with the exposure light, whereby the transfer pattern is transferred onto the transfer resist film. [Effect of the Invention] According to the present invention, the number of times of drawing and 156467.doc 201227166 development can be reduced by the film reduction by the resist pattern, and the in-plane uniformity of the film-reducing speed of the anti-synaptic pattern can be improved and improved. The formation accuracy of the transfer pattern. [Embodiment] As described above, in the method of manufacturing a multi-mode mask, for example, in order to realize a three-tone type (light transmitting portion, light blocking portion, and semi-light transmitting portion), it is necessary to pattern a two-layer film formed on a transparent substrate. And it is necessary to perform at least 2 drawing and developing steps in the previous manufacturing method. Further, in the multi-tone type photomask of the above four or more types, it is necessary to perform at least two or more drawing and development steps. Therefore, improvement in production efficiency and manufacturing cost is expected. Further, the accuracy of the formation of the transfer pattern is lowered due to the mutual displacement of the patterns of the plurality of times of drawing. Therefore, the inventors of the present invention have made efforts to reduce the number of drawing and developing steps in order to solve the above problems. First, as illustrated in Fig. 7(a), the semi-transmissive film 1〇1 and the light-shielding film 102 are formed on the transparent substrate 1 in this order, and the resist film 103 is formed on the uppermost layer. , the blank mask i〇b,. Then, as shown in the solid line of FIG. 7(b), the resist film 1〇3 of the blank mask 10b is exposed and developed to form a thickness having, for example, two steps. The first anti-surname pattern 103p'. The first resist pattern 103p' is formed to cover the light-shielding portion 11A, the formation region of the semi-transmissive portion 11', and the semi-transmissive portion 115, and the thickness of the anti-contact film 103' in the formation region. The thickness of the anti-contact film 103' in the formation region of the light shielding portion 110' is thin. Further, the region in which the light-shielding portion 110' or the semi-light-transmitting portion us' is formed is a region in which the light-shielding portion 110' or the semi-light-transmitting portion 115' is to be formed in the multi-mode mask to be obtained. I56467.doc • 12-201227166 Then, the first resist pattern 10〇3p is used as a mask to etch the light-shielding film 1〇2 and the semi-transmissive film 101. Next, as shown in FIG. 7(b) 21〇4p, the first resist pattern is kissed and the film is thinned as illustrated by a broken line and a partial solid line, thereby forming a second resist pattern 1 covering the formation region of the light shielding portion 110'. 〇4〆. Then, in Fig. 7(c), the second resist pattern 〇4ρ· is etched by using the second resist pattern 1〇4ρι as a mask, and the second resist pattern ι〇4ρ· is removed. According to this method, the number of times of drawing and developing steps can be reduced to the next time, and the above problem can be solved. Here, the film-reduction means that, for example, the upper portion (surface) of the resist pattern 1 〇 3 ρ' is exposed to a desired amount of the resist pattern 103 ρ ' in the vertical direction to reduce the film thickness. The first resist pattern 1 〇 3 ρ of the above-mentioned resist film can be supplied to the first etching pattern 103ρ′ by decomposition and ashing by using an active material such as active oxygen generated by plasma, for example, by plasma ashing. Ashing) is carried out by constituting the organic material of the resist film 1 (10). However, according to the study by the inventors of the present invention, it is understood that the in-plane uniformity of the first resist pattern l〇3p in the method is insufficient. As a result, it is difficult to accurately control the shape of the resist pattern by the subtraction film. For example, as shown in Fig. 7 (02^5), it is understood that the size of the portion of the transfer pattern is smaller than the predetermined region. Therefore, the inventors of the present invention conducted active research on the reason for reducing the in-plane uniformity of the film-removing speed. The reason will be described below with reference to the drawings. Fig. 6 is a plan view showing the second resist pattern 1031. In Fig. 6, (b) shows the configuration of the first resist pattern 1 315 before the film is removed, (b2) shows the case where the first resist pattern 10313 is deactivated by active oxygen, and (b3) shows 156467. .doc -13- 201227166 The second anti-surname pattern 104p obtained by film reduction is used as a mask to engrave a light-shielding film to form a transfer pattern. The first anti-rhythm pattern 1〇3〆 shown in Fig. 1 contains a sparse area (for example, a region with a large ratio of the opening area per unit area) and a dense ° ('J's open area per unit area) The area with a smaller proportion). Specifically, for example, the formation region of the light transmitting portion 120 (see FIG. 7(c)) corresponds to the article light shielding portion U〇' (see FIG. 7(C)) or the semi-light transmitting portion 115 (see FIG. 7(4)). The formation area is equivalent to a dense area. In a sparse area, since the resist material (the first anti-surname pattern 103〆) which is a target for film reduction is relatively small, the consumption of active oxygen is not so thin in the area where b is sparse, and it is easy to supply the first anti-resistance. The amount of active oxygen supplied per unit area of the etched pattern 1 〇 3 ρ is larger than the amount of active oxygen consumed per unit area consumed by the first anti-fourth film 103 ρ film. That is, in the sparse area! The resist pattern 1 〇 3 ρ, the film-reducing speed is relatively increased relatively. In the dense region, since the resist material (first resist pattern 1〇3〆) which is a target for film reduction is relatively sufficiently present, the amount of active oxygen consumed is large. Therefore, in the 'dense area', the amount of active oxygen supplied per unit area of the supply to the "corrosion pattern 1" is higher than that per unit area consumed by the film of the first anti-surname pattern (8) The state in which the consumption of active oxygen is insufficient. That is, the film-reducing speed of the m-th name pattern ι〇3ρ. in the dense area is relatively reduced. As described above, it is understood that the in-plane uniformity of the film-removing speed is lowered by the influence of the shape of the i-th anti-surname pattern (9) which is the object of film reduction. I56467.doc •14· 201227166 In this case, it is difficult to correctly correct the shape control by the film reduction by the in-plane uniformity of the film-reduction speed, and the transfer pattern is as illustrated in Fig. 6 (b3). The formation accuracy is degraded. In particular, in the FPD photomask, since the difference in the density of the anti-pattern is relatively large, there is a tendency that the unevenness of the film-reducing speed tends to occur remarkably. Further, the decrease in the in-plane uniformity of the film-removing speed occurs not only when the density difference of the resist pattern is large but also when the difference in the opening area of the resist pattern itself is large. Therefore, the inventors of the present invention have further actively studied on the method of improving the in-plane uniformity of the film-reducing speed. As a result, it was found that in the step of the film-removing treatment, the amount of active oxygen consumed was uniformized in the plane. That is, the following findings are finally obtained: in a region where the active oxygen phase material tends to become excessive (a region where the anti-surname film is less exposed), the material that reacts with the active oxygen is exposed, thereby supplying the first anti-residue pattern. H) 3p, the active oxygen is partially consumed, thereby improving the in-plane uniformity of the film-reducing speed. According to the research of the present inventors, by adopting such a method, the pattern line width (ie, the line width of the semi-transmissive film pattern and the light-shielding film pattern) formed in the semi-transmissive portion and the light-shielding portion of the multi-tone mask can be approximated. The design value provided by the design data of the mask. Moreover, even if the design value differs from the actual line width by a specific difference, the difference can be made uniform in the plane. The present invention is based on the above-mentioned insights proposed by the inventors. <First Embodiment of the Invention> Referring to Fig. 1 and Fig. 2, a first embodiment of the present invention will be described. Fig. 1 is a flow chart showing a manufacturing procedure of the multimode mask of the first embodiment. . Fig. 2 is a cross-sectional view showing a pattern transfer method using a multi-tone mask 1 156 156467.doc • 15 - 201227166. (i) Method of manufacturing multi-mode mask (blank mask preparation step) First, 'as illustrated in Fig. 1(a), 'the semi-transmissive film 1〇, the light-shielding film 102 are formed on the transparent substrate 1 in this order. A blank mask 1 〇b of the anti-soul film 103 is formed on the upper layer and on the uppermost layer. The transparent substrate 100 is mainly composed of a low-expansion glass containing, for example, quartz (Si〇2) glass, or SiO 2 , Al 2 〇 3 , B 2 〇 3 , R 〇 (R is an alkaline earth metal), and r 2 〇 (r 2 is an alkali metal). The flat plate is formed. The main surfaces (front surface and back surface) of the transparent substrate 1 are flat and smooth by polishing or the like. The transparent substrate 1 can be, for example, a square having a side of about 2000 mm to 2400 mm. The thickness of the transparent substrate 1 可 can be set, for example, to about 3 mm to 20 mm. The semi-transmissive film 101 contains a material containing a metal material such as molybdenum (Mo) or a button (Ta) and a stone (Si) and contains, for example, MoSi, MoSix, MoSiN, MoSiON, MoSiCON, TaSix, or the like. The semi-transmissive film 1〇1 is configured to be etched using a fluorine (F)-based insect engraving liquid (or a button engraving gas). Further, the semi-transmissive film 1 〇1 has etching resistance to an etching solution for chromium containing pure water containing cerium ammonium nitrate ((NH4)2Ce(N03)6) and peroxyacid (HCIO4), and is as described later. The etching stopper layer is used to etch the light-shielding film 102 with an etching solution for chromium. The light shielding film 102 substantially contains chromium (Cr). Further, when a Cr compound (CrO, CrC, CrN or the like) (not shown) is present in the surface layer of the light-shielding film 1 2, the surface of the light-shielding film 102 can have a reflection suppressing function. The light-shielding film 1 〇 2 is formed by etching using the above-described etching solution for chromium. 156467.doc -16- 201227166 The resist film 103 may be composed of a positive photoresist material or a negative photoresist material. In the following description, the resist film 1〇3 is formed as a positive photoresist material. The resist film 103 can be formed using, for example, a slit coater or a spin coater. (1st resist pattern forming step) Next, the blank mask i〇b is subjected to a touch exposure by a laser scanner or the like to expose the resist film 101, and the developer is supplied to the resist film 3 and is performed. Development is performed to form a first resist pattern 10b that covers the formation region of the light shielding portion 110 and the formation region of the semi-light transmission portion ι5. A state in which the first resist pattern 1 〇 3p is formed is exemplified in Fig. 1(b). As shown in FIG. 1(b), the i-th anti-money pattern l〇3p is formed so that the thickness of the resist film ι3 in the formation region of the semi-transmissive portion U5 is larger than that in the region where the light-shielding portion 110 is formed. 〇3 is thin. The formation area of the light-shielding portion 110 or the semi-transmissive portion 115 is a region in which the light-shielding portion 11 or the semi-transmissive portion 115 is to be formed in the multi-mode mask 10 to be obtained. As described above, in order to form the first resist pattern 103p having a different thickness, for example, the following method can be used. According to the following method, the first anti-money pattern ι〇3ρ having two or more residual film amounts can be formed by the sub-drawing and the sub-difference processing. Specifically, when the blank mask 100b is prepared for drawing, in the region where the light transmitting portion 120 is formed, an exposure amount "again" for completely resisting the anti-suripher film 1 〇 3 is applied to form the semi-transmissive portion 115. In the area, the exposure amount is less than that of the resist film 〇3. The details of the drawing method will be described in detail below by way of two examples. (a) The composite material of the mask pattern of the pattern data of all the 156467.doc 17 201227166 of the light-shielding portion 110, the light-transmitting portion 120, and the semi-transmissive portion 115 is arranged by the method of the half-dose drawing as shown in Fig. 8 (4). , package a shading. The case of p data 11Qd, light transmission part data, and semi-transmission part data 115d is taken as an example. In this case, the synthetic pattern knife of the mask pattern is separated from the light-shielding portion data 110d and the light-transmitting portion data 12〇d shown in FIG. 8(b) and the semi-transmissive portion data shown in FIG. 8(c). 115d. Here, when the above information is separated, the light shielding portion data u〇d may be included in the data side of the semi-transmissive portion of Fig. 8(c). In the case of using a positive resist, since the light-shielding portion data 丨 is a portion that cannot be drawn, no matter which data separation method is used to indicate the same result in the subsequent drawing step, no problem occurs. Further, after the formation area of the light-transmitting portion 120 is drawn by the exposure amount 〇〇〇%) in which the resist film 103 can be completely removed, the exposure amount of the resist film 1 〇 3 is completely sensitized by about half of the exposure amount. The formation region of the semi-transmissive portion U5 is drawn so that the pattern shown in Fig. 8(a) can be drawn. Further, in the order in which the formation region of the light transmitting portion 120 and the formation region of the semi-light transmitting portion U5 are drawn, the order may be different, but whichever is the first. The distribution of the exposure amount when the above-described drawing pattern shown in Fig. 8(a) is drawn on the resist film 103 (the drawing example on the positive resist) is as shown in Fig. 9. That is, the exposure amount of the region c (the formation region of the light transmitting portion 120) is wo%, and the exposure amount of the region a (the formation region of the semi-light transmitting portion 115) is 50. /. The exposure amount of the area b (the formation area of the light shielding portion 11A) was 0% (unexposed). The exposure amount of the semi-transmissive portion is not limited to the above value, and may be, for example, 30% or more and 70% or less. As long as it is in this range, the amount of the residual resist film does not cause a defect as a mask during etching, and the precision can be made high in a state where the boundary between the thick portion and the thin portion of the resist film is clearly maintained. The film is reduced. 156467.doc •18· 201227166 As shown in the figure i〇(a) of the I-Ι cross-sectional view of Fig. 9, when the drawing is performed with the exposure distribution not shown in Fig. 9, the area B is not exposed, and the area A is The amount of exposure at the time of drawing was adjusted so that the film thickness after exposure and development was about half of the residual film value of the region]3. When resist patterning is performed in the region c, a sufficient amount of exposure that the resist is completely removed is provided. For example, as a method of painting the field at this time, the area drawing c is performed by a laser drawing machine with a light amount of 100% of the exposure amount, and then the area a is drawn with a light amount of about 5% by the exposure amount. Which one is prior to the drawing order of the areas A and C. Next, as shown in Fig. 10 (b), the resist film 103 is developed so as to have a difference in film thickness. At this time, the film thickness of the resist film 103 is about half of the area A-based region B, and the region c is completely removed. Here, although the exposure amount of the formation region (region A) of the semi-transmissive portion 115 is 50%, it may be, for example, in the range of about 2% to about 85%, depending on the residual film value required. Make changes. By changing the exposure amount in this manner, the region A can be formed so as to become the residual film value after development. In the third embodiment, the drawing can be continuously performed in such a step. (b) Method of Using Unresolved Patterns Next, another method of forming a resist pattern will be described. In this method, the blank mask lb is also used, and is drawn using a laser plotter or the like. As shown in Fig. 12, the drawing pattern includes the light shielding portion patterns 110a and 110b, the light transmitting portion pattern 12〇p, and the semi-light transmitting portion pattern 丨丨祚. Here, the semi-transmissive portion pattern 115p is a region in which the light-shielding pattern U5a and the transmission pattern 115b of the fine pattern (line and gap) including the resolution limit of the drawing machine to be used are formed. For example, if the resolution limit of the laser drawing machine used is 156467.doc -19-201227166 is 2.0 μm, the gap width of the transmission pattern n5b in the semi-transmissive portion pattern 115p in FIG. 12 can be set to less than 2.0 μm. Moreover, the line width of the light-shielding pattern U5a can be set to less than 2 below the resolution limit of the drawing machine. 〇μιη. Further, in the case of the line and gap patterns, the exposure amount at the time of exposure by the pattern can be adjusted according to the line width, and the resist film 1 on the portion where the semi-light transmitting portion 115 is formed can be finally controlled.残3 residual film value. For example, the line width can be set to i/2 of the minimum line width of the resolution of the rendering machine, such as ι/8 to 1/3. When the drawing material including the pattern of the light-shielding portion patterns 1 1 〇a, 1 1 〇b, the light-transmitting portion pattern 120p, and the semi-transmissive portion pattern 115p is used (in the case of the pattern of the image, for example, it is preferably The drawing is performed once by using one piece of data of the data of the synthetic light transmitting portion pattern 丨2〇p and the data of the semi-light transmitting portion pattern 115p. The exposure amount at this time is taken as the exposure amount of the resist film 3 formed in the region where the light transmitting portion 丨2 is formed. Then, in the region where the light transmitting portion 12A is formed (the C region shown in FIG. 11), the resist film 1〇3 is sufficiently exposed; in the region where the light shielding portion 110 is formed (the B region shown in FIG. 11) In the case, the anti-surname film 1〇3 is in an unexposed (unexposed) state. Further, in the region in which the semi-transmissive portion 115 is formed (the region A shown in Fig. 11), since the light-shielding pattern 1153 cannot be imaged by the drawing machine, the line width cannot be drawn, and the exposure amount as a whole becomes insufficient. That is, the effect of reducing the exposure amount of the entire formation region and exposing the resist film 1〇3 can be obtained in the formation region of the semi-transmissive portion 115. After the edge is drawn, if it is developed with a specific developer, the blank mask 〇b is formed with the light-shielding portion ii 〇 (b region) and the semi-transmissive portion 115 (A region) in the resist film 103 The first resist pattern ι 3p having a different film value (see FIG. 11(b)). In the formation region of the semi-transmissive portion 115, since the actual exposure amount is less than that of the 156467.doc •20·201227166 etch film 103, the exposure amount is less. Therefore, if the resist film ι 3 is developed, it cannot be completely dissolved. 'and remaining thinner than the resist film 103 of the unexposed light-shielding portion 110. Further, in the light transmitting portion 120, the button film 1. is in a state of being completely removed. Further, the method of forming the resist pattern containing two or more residual film amounts is not limited to the above. It is possible to draw different exposure amounts based on the position of the anti-touch film 103 by a method other than the above-described method of changing the intensity of the scanning area by performing beam scanning of the drawing machine. (1st step of engraving) Next, as shown in Fig. 1(C), the first resist pattern i 03p formed is formed as a mask etched light-shielding film 102 to form a light-shielding film pattern 1 〇 2p. The name of the light-shielding film 102 can be supplied to the light-shielding film 102 by a method such as a spray method to perform wet-touching. At this time, the semi-transmissive film 101 of the substrate functions as a stop layer. Thus, a state in which the light-shielding film pattern 102p is formed is illustrated in Fig. i(c). (Second resist pattern forming step) Next, the first resist pattern 1 〇 3p is thinned, and the light-shielding film 1 〇 2 in the formation region of the semi-light-transmitting portion 115 is exposed. At this time, the resist film 103 remains in the formation region of the thicker light-shielding portion 110 of the resist film 103. Thereby, the second resist pattern 1 〇 4p covering the formation region of the light shielding portion 110 is formed. The state is exemplified in Fig. 1(d). The film of the first anti-touch pattern l〇3p can be ashed by the first resist pattern 1〇3p to generate a plasma of a reactive gas such as oxygen (〇2) gas, and the generated active oxygen will be used. The resist as an organic substance is decomposed into c〇x & h2〇 and the like and 156467.doc 201227166 is removed, whereby the film can be removed. When the active oxygen is supplied to the first anti-surname pattern 103p as described above, the organic substance constituting the anti-button film i can be decomposed and the film can be reduced. As the reactive gas, for example, a helium 3 gas or a gas can be used. The gas can be irradiated with light such as a known vacuum ultraviolet (Vacuum Ultra-Violet: VUV) irradiation device, or an excimer 11 lamp, a low-pressure mercury lamp, or plasma irradiation to make oxygen in the air (〇2). Ozone (〇3) is produced. Here, the active oxygen is considered to be, for example, a radical (Η〇·) contained in a gas of 电3 gas or 〇2 gas other than 〇3 itself, or is contained in a reactive gas. It is a chemical species having a sufficiently active oxygen atom (0) which reacts with the anti-touch film 103. However, as described above, when the third anti-rice pattern 1〇3ρ is reduced by supplying active oxygen, 'the amount of active oxygen supplied and consumed is based on the shape of the i-th resist pattern 1〇3ρ. Balanced in the case where the in-plane becomes uneven and the in-plane uniformity of the film-reducing speed decreases. That is, in the region where the i-th resist pattern 丨〇3ρ is sparse, there is a case where the film-reduction speed relatively increases. In the first embodiment, the first resist pattern 1 is exposed in a state where the semi-transmissive film 1〇1 having the effect of consuming active oxygen is exposed in a region where the resist film 103 is less exposed. The 3 ρ film is reduced by the use of one of the active oxygen supplied to the first resist pattern 1 〇 3 ρ , and the balance between the supply amount of the active oxygen and the amount of consumption becomes uniform in the surface regardless of the density of the resist pattern. The in-plane uniformity of the film-reducing speed can be improved. Fig. 4 is a cross-sectional view showing the film-removing mechanism of the second resist pattern 103p in the first embodiment. 4 shows the configuration of the first anti-rice pattern l〇3p before the film is removed; (b2) shows the case where the resist pattern i 156467.doc -22-201227166 resist pattern ι〇3ρ is reduced by active oxygen; (b3) The case where the transfer pattern is formed by using the second resist pattern 10415 obtained by the film reduction as a mask is shown. As shown in Fig. 4, according to the first embodiment, the semi-transmissive film is exposed and disposed in a sparse region, thereby suppressing the area per unit consumed by each of the sparse region and the dense region. The difference in the consumption of active oxygen. That is, a part of the active oxygen supplied to the first resist pattern 103p is consumed by the exposed semi-transmissive film 101. Then, by the first! The in-plane difference in the amount of active oxygen consumed per unit area consumed by the resist pattern ι〇3ρ can be reduced by the amount of active oxygen per unit area consumed by the semi-transmissive film 1〇1. Fill it up. As a result, the in-plane uniformity of the film-removing speed can be improved, and the shape control of the second resist pattern ι 4p formed by the film can be accurately performed. X, the effect of the active oxygen consumed by the semi-thin film 101 is obtained by reacting 8 丨 contained in the semi-transmissive film 101 with active oxygen, whereby the active oxygen is captured by si, or due to active oxygen and semi-transparent. The interaction between the surfaces of the light film 1〇1 causes the active oxygen to be deactivated. (Second etching step) The second resist pattern 1 〇 4p and the exposed light shielding film 1 〇 2 are used as a mask, and the semi-transmissive film 101 is etched to form a semi-transmissive film pattern 1 〇 lp. The transparent substrate 100 is partially exposed. The etching of the semi-transmissive film 1〇1 can be performed by supplying a fluorine (F)-based etching liquid (or etching gas) to the semi-transmissive film 1〇1. Thus, the state in which the semi-transmissive film pattern 1 〇 lp is formed is exemplified in (4). (Third etching step) Next, the second anti-snag pattern is referred to as a mask, and the light-shielding film 102 is touched to expose the semi-transmissive film 1〇1. The etching of the light-shielding film 1 2 can be performed by supplying the etching liquid for chromium described above to 156467.doc -23 201227166 to the light-shielding film 102. At this time, the semi-transmissive film 101 of the substrate functions as an etching stopper layer. The state in which the third etching step is performed is exemplified in Fig. 1(f). (Second resist pattern removing step) Then, the second resist pattern ι 4p is removed, and the multi-mode mask 10 of the first embodiment is completed. The second anti-contact pattern can be removed by bringing the peeling liquid or the like into contact with the second resist pattern 104p. A state in which the second resist pattern is removed is exemplified in Fig. 1(g). With the above, the manufacturing steps of the multi-tone mask 1 as illustrated in Fig. 1(g) are completed. The multi-tone mask 10 shown in Fig. 1(g) is used for, for example, the manufacture of a thin film transistor (TFT) substrate for a flat panel display (FPD). However, Fig. 1(g) exemplifies a laminated structure of a multi-mode mask, and the actual pattern is not necessarily the same. The light-shielding portion 110, the semi-transmissive portion 115, and the light-transmitting portion 120 included in the multi-mode mask 10 are configured to have exposure light with respect to a representative wavelength in a range of, for example, i-line to g-line, respectively, within a specific range. Transmittance. That is, the light blocking portion 110 is configured to shield the exposure light (the light transmittance is approximately 〇%), and the light transmitting portion 120 is configured to transmit the exposure light by approximately 1%. Further, the semi-transmissive portion ιι is configured such that the transmittance of the exposure light is 20% to 80% (when the transmittance of the sufficiently transparent light-transmitting portion 12 is 100%, the same applies hereinafter), preferably to 3 0/〇~60% or so. In addition, the 丨 line (365 nm), the h line (10) 5 (four), and the g line (436 nm)' refer to the main luminescence spectrum of mercury (Hg). Here, the representative wavelength means the i line, the h line, and the g line. Any arbitrary wavelength. Further, it is more preferably the above transmittance with respect to any of the i-line to the g-line. 156467.doc -24·201227166 (2) Pattern transfer method for the transfer target body FIG. 2 illustrates a resist pattern formed on the transfer target body 30 according to the pattern transfer step using the multi-tone mask 1〇. Partial cross-section of 302p (solid line). The resist pattern 302p is irradiated with the exposure light via the multi-tone mask 10 by the positive resist film 302 (the broken line portion and the partial solid line portion) which is the transfer resist formed on the transfer target 3A. 'And formed by development. The transfer target 3 includes a substrate 300 and a metal thin film or an insulating layer or a semiconductor layer which is sequentially laminated on the substrate 300, and the positive resist film 302 is previously uniform on the processed layer 301. Formed by the thickness. Further, each layer constituting the processed layer 301 may be configured to have resistance to an etching liquid (or an etching gas) of the upper layer of each layer. When the exposure light is irradiated to the positive resist film 3 〇2 via the multi-mode mask 10, the light is not transmitted through the light blocking portion 110, and the amount of light of the exposure light depends on the semi-transmissive portion 115 and the light transmitting portion 120. The order increases in stages. Further, the positive-type anti-shoe film 302 is attached to the light-shielding portion 11 and the semi-transparent portion! The film thickness corresponding to each of the regions of 5 is sequentially thinned, and is removed in a region corresponding to the light transmitting portion 12A. As described above, the resist pattern 30 is formed with a resist pattern 302p having a film thickness stepwise. When the resist pattern 302p is formed, it is exposed to a region not covered by the resist pattern 3〇2p (and the light transmitting portion). The processed layer 3〇1 of the region corresponding to 120 is sequentially etched from the surface side and removed. Then, the resist pattern 3〇2p is ashed (reduced film) and the thin film region (the region corresponding to the semi-transmissive portion 丨15) is removed, and the re-exposed processed layer 3 is sequentially etched and removed] Thus, by using the resist patterns 3〇2p having different film thicknesses in stages, the steps of the previous 156467.doc -25-201227166 mask can be implemented, the number of masks can be reduced, and the light lithography can be simplified. Method steps. (3) Effects of the first embodiment According to the first embodiment, one or a plurality of functions described below are exerted. According to the first embodiment, the number of times of drawing and developing steps can be reduced by using the film of the first resist pattern 10p3p. Thereby, the production of the multi-mode mask 10 can be improved, and the manufacturing cost can be reduced. X, in the formation of the three-tone transfer pattern (4)', prevents the positional shift between the two types of patterns (the light-shielding film and the semi-transmissive film pattern), so that the formation accuracy of the transfer pattern can be suppressed from deteriorating. Further, according to the first embodiment, at the time of the resist film-removing step, a substance or a medium which reacts with active oxygen is disposed in the surface. In other words, in the light-transmitting portion 12 that is exposed to the resist film 1〇3, the semi-transmissive film is exposed. Therefore, if the semi-transmissive film 101 contains Si or the like and can react with active oxygen, The amount of active oxygen consumed in the surface produces a large degree of heterogeneity. In other words, the exposed semi-transmissive film 101 will replace the second anti-corrosion pattern ι 3p, so that one of the generated active oxygen is partially consumed. Further, the semi-transmissive film 101 preferably contains a material containing a metal material such as Mo and Si. Thereby, the consumption per unit area consumed by the filming of the first resist disc 103p can be filled with the consumption of active oxygen per unit area consumed by the semi-transmissive film 101. The difference in the face, and the old money pattern is called the film. Further, a part of the active oxygen supplied to the first resist pattern 103p is consumed.
使活性氧接觸半透光膜101而進行。其係由於可藉由利Z I56467.doc •26· 201227166 半透光膜101所包含之以使捕捉活性氧或使其失活而進 行因此’可局部抑制稀疏之區域之減膜速度而使其接近 密集之區域之減膜祙疳，你而π接宜说时4 面 性。並且，可提高第2抗蝕圖案104p之形成精度，且可提 高轉印圖案之形成精度。 又，根據本第1實施形態，藉由同時獲得上述之圖案間 之位置偏移防止、與轉印圖案之形成精度提高兩個效果， 而可更有效地進行圖案之線寬控制。具體而言，圖案線寬 不背離設計值，並且不會產生設計值與實際之線寬之差異 (不為0之情形）之面内偏差。換言之，相對於設計值實際 之線寬不會偏向正側或偏向負側，進而差異之傾向於面内 為固定。即，可提高半透光部與遮光部之重合精度，且可 提尚線寬之面内均一性。因此，TFT基板之圖案等具有對 稱性之圖案(例如’透光部' 遮光部、半透光部、遮光 部、透光部依該順序沿一個方向排列，相對於半透光部， 位於兩側之遮光部之線寬為相同之情形等）中，消除1前 之方法中由於2次之描繪所引起之位置偏移而無法維持該 對稱性之問題。又，亦可抑制由圖案疏密差起因及開口率 起因所引起之面内之線寬變動之偏差，故對於目標線寬之 製造過程中之控制亦變得容易。 <本發明之第2實施形態> 繼而，使用圖3對本發明之第2實施形態進行說明。約 實施形態中’上述第i抗姓圖案吻之減膜係於透光部⑽ 之形成區域殘存有半透光膜1〇1 ’於該半透光膜ι〇ι露出之 156467.doc -27- 201227166 狀態下而進行，然本第2實施形態中，第1抗蝕圖案103p之 減膜係藉由於透光部120之形成區域配置暫定之抗蝕圖 案’並使該抗蝕圖案露出而進行。即，本第2實施形態 中’形成第1抗蝕圖案l〇3p之時，同時於透光部120之形成 區域形成暫定圖案（暫定抗蝕圖案）l〇3d，藉由構成暫定圖 案103d之抗蝕膜103，一面使活性氧之一部分消耗一面將 第1抗蝕圖案l〇3p減膜，就此方面而言，與上述之第i實施 形態不同。以下，就與上述之第1實施形態不同之方面， 參照圖3進行詳細闡述。 (1)多調式光罩之製造方法 (光罩用空白基底準備步驟） 於本第2實施形態之多調式光罩10之製造步驟中，亦使 用如圖3(a)所例示般，與上述之第i實施形態相同之空白光 罩 10b。 (第1抗蝕圖案形成步驟） 以與上述之第1實施形態相同之方法，形成覆蓋遮光部 110之形成區域及半透光部115之形成區域之第丨抗触圖 案。此時，於透光部120之形成區域形成暫定圖案1〇3d。 暫疋圖案10 3 d並非作為最終之結構體，即轉印圖案而殘存 者（不包含於欲獲得之多調式光罩10之轉印圖案中），但於 夕。周式光罩10之製造步驟中’其係用於提高圖案形成精产 而發揮作用者。例如於第2抗蝕圖案形成步驟中之第丨抗钮 圖案103p之減膜時對提高減膜速度之面内均_ 丨王寻，具有 作為輔助之圖案之作用。 156467.doc -28- 201227166 又，暫定圖案l〇3d之線寬較佳為不太大，其係於下述之 暫疋圖案l〇3d之除去步驟中，與位於下層側之半透光膜 1 01之溶析同時而迅速地被剝離。即，暫定圖案1 d作為 例如抗蝕圖案之線寬較理想的是為丨μιη以下，較佳為〇 5 μηι以下，更佳為〇 .! μη1以下；作為鄰接之圖案與圖案之間 隙之部分，較理想的是為i μιη以上’較佳為2 μιη〜4 μιη左 右。即，若暫定圖案103d以線與間隙而形成，則線部線寬 較佳為0.01 μχη〜1.0㈣，進而較佳為〇〇1 μιη〜〇5 _，進 而更佳為0.01 μηχ〜(Μ μιη。又，間隙部分可為1㈣〜4 _ 左右。但，暫定圖案103d並不限制於線與間隙，於透光部 120之形成區域配置具有相同之大小之圖案（點狀圖案等 再者，本第2實施形態中，將藉由積層之膜之中至少一 層之膜之除去，而除去包含該膜且於形成於該膜之上層之 膜之態樣視為剝離。例如，於透明基板上，半透光膜、遮 光膜、抗㈣依該順序形成時，藉由將半透光膜触刻除 去’而將遮光膜與抗㈣連同半透光膜—併藉由剝離而除 去。 又，構成暫定圖案103(1之抗敍膜1〇3為以將第成领圖案 1〇3Ρ減膜時之活性氧之供需調整為㈣，而必需為於第^ 抗蝕圖案1〇3p之減膜之時’成為存在於透光部12〇之形成 區域且使表面露出之狀態’但膜厚並無特別限制。因此， 如下所述’可為與遮光膜110之形成區域相同之(相對較厚 之）膜厚’亦可為與半透光部115之形成區域相同之（相對較 4之）膜厚此處’设為具有與例如遮光部削之形成區域 156467.doc •29- 201227166 中之抗银膜103同程度之厚度者。將形成有包含暫定圖案 103p之第1抗蝕圖案i〇3p之狀態例示於圖3(b)。 (第1蝕刻步驟） 其次，以與上述之第1實施形態相同之方法，將形成之 第1抗蝕圖案103p作為遮罩而蝕刻遮光膜1〇2，從而形成遮 光膜圖案102p。此時’將暫定圖案i〇3d作為遮罩，亦形成 暫定遮光膜圖案。將形成有遮光膜圖案l〇2p之狀態例示於 圖 3(c)。 (第2抗蝕圖案形成步驟） 其次，將第1抗姓圖案l〇3p減膜，使半透光部115之形成 區域中之遮光膜102露出’從而形成覆蓋遮光部no之形成 區域之第2抗姓圖案ι〇4ρ。此時，於暫定圖案1〇3d中亦將 抗蝕膜103減膜。將其狀態例示於圖3(d)。 第1抗蝕圖案103p之減膜與上述之第1實施形態相同，以 任一方法對第1抗蚀圖案10 3 p供給活性氧而進行。本第2實 施形態中’具有與活性氧發生反應並消耗之效果之半透光 膜101露出，並且於在透光部120之形成區域配置暫定圖案 103d之狀態下將第1抗蚀圖案ι〇3ρ減膜。藉此，可消耗掉 供給至第1抗姓圖案1〇3ρ之活性氧之一部分，且可進一步 南減膜速度之面内均一性。 圖5係表示本第2實施形態之第1抗蝕圖案103ρ之減膜機 制之剖面圖。圖5中’（b 1)表示減膜前之第1抗蝕圖案丨03ρ 之構成；（b2)表示利用活性氧將第1抗蝕圖案⑺邛減膜之情 形；（b3)表示將藉由減膜所獲得之第2抗蝕圖案1〇4{)作為遮 156467.doc •30- 201227166 罩而银刻遮光膜，從而形成轉印圖案之情形。如圖5所 示’根據本第2實施形態，本來第1抗蝕圖案1〇31)藉由於稀 疏之區域配置暫定圖案l〇3d，而可使稀疏之區域及密集之 區域之各者中消耗之每單位面積之活性氧之消耗量均一 . 化。即，所產生之活性氧之一部分藉由構成暫定圖案i〇3d - 之抗蝕膜103而消耗。然後，藉由將第1抗蝕圖案1 〇3p減膜 所消耗之每單位面積之活性氧之消耗量之面内之差能以藉 由暫定圖案103d之抗蝕膜103所消耗之每單位面積之活性 氧之消耗量而填補。其結果，可進一步提高減膜速度之面 内均一性，且可更正確地進行藉由減膜而形成之第2抗蝕 圖案104p之形狀控制。又，所謂抗蝕臈1〇3之活性氧之消 耗’意味著構成抗蝕膜103之材料與活性氧發生反應並被 分解，並且該活性氧變得不與材料反應。 (第2蝕刻步驟） 其次’以與上述之第1實施形態相同之方法，將第2抗钮 圖案l〇4p及露出之遮光膜102作為遮罩，對半透光膜1〇1進 行濕式蝕刻從而形成半透光膜圖案101p。此時，暫定圖案 103d為線寬較小之圖案，故位於其下層側之半透光膜i i . 被濕式蝕刻時，藉由剝離而自半透光膜開始將上層之膜自 • 基板上除去。此時，包含暫定圖案103d之下層之暫定遮光 膜圖案亦被除去。藉此’透明基板10〇露出之透光部12〇形 成。將該狀態例示於圖3(e)。如上所述，因可使第2蝕刻步 驟中暫定圖案103d消失，故不再另外需要用於除去暫定圖 案103d之步驟。又，可形成具有特定之透過率之透光部 156467.doc 201227166 110 〇 (第3蚀刻步驟） 繼而’與上述之第1實施形態相同，將第2抗蝕圖案l〇4p 作為遮罩’進而蝕刻遮光膜1〇2從而使半透光膜1〇1重新露 出。將第3蝕刻步驟所實施之狀態例示於圖3(f)。 (第2抗蝕圖案除去步驟） 然後’與上述之第1實施形態相同，除去第2抗蝕圖案 1〇4ρ從而完成本實施形態之多調式光罩1〇之製造。將除去 第2抗蝕圖案之狀態例示於圖3(g)。 以上’圖3(g)中所例示之多調式光罩10亦具有與上述之 第1實施形態相同之形狀、光學特性等。 (2)本第2實施形態之效果 即便於本第2實施形態’亦具有與第1實施形態相同之效 果。即，不論圖案形狀（疏密差、周邊開口率）均可獲得面 内均一性之極高之減膜行為。 又’根據本第2實施形態，供給至第i抗蝕圖案1〇3ρ之活 性氧之一部分藉由構成暫定圖案〗〇3d之抗蝕膜1〇3而消 耗。藉此，藉由將第1抗蝕圖案103p減膜所消耗之每單位 面積之活性氧之消耗量之面内之差能以藉由構成暫定圖案 103d之抗钮膜1 〇3所消耗之每單位面積之活性氧之消耗量 而填補，並且可將第1抗蝕圖案1031)減膜。因此，可進一 步提兩減膜速度之面内均一性，且可提高第2抗蝕圖案 l〇4p之形成精度。 又，根據本第2實施形態，於第2蝕刻步驟中，暫定圖案 156467.doc -32- 201227166 l〇3d藉由位於其下層側之半透光膜ι〇ι之濕式蝕刻而剝 離。藉此，不再另外需要用於除去暫定圖案i〇3d之步驟。 又，根據本第2實施形態，如上所述，因使暫定圖案 l〇3d消失，故對特定之透光部11〇之透過率不殘留任何影 * 響’且可形成欲獲得之轉印圖案。 <本發明之其他實施形態> 以上，對本發明之實施形態進行了具體地說明，但本發 明並不限定於上述之第丨、第2實施形態，於不脫離其主旨 之範圍内可作種種變更。 上述之第1、第2實施形態中，半透光膜1〇1係例如包含 MoSi等鉬（Mo)者，亦可包含含有例如矽化鎢（WSi)或矽化 鎳（NiSi)等其他金屬材料與矽（Si)之材料。此外，亦可包含 矽合金、矽之氮化物、氧化物、碳化物等、或該等與上述 之材料複合而成者。 上述之第2實施形態中’將暫定圖案1〇3d作為包含複數 之細線者，但暫定圖案1 〇3d之形狀並不限於此。例如，亦 可使點狀之暫定圖案l〇3d分散存在於透光部12〇之形成區 域。於該情形時，理想的是點之尺寸不會給第2蝕刻步驟 - 中之暫定圖案l〇3d之除去帶來障礙。 上述之第2實施形態中，將暫定圖案l〇3d所具有之抗蝕 膜103設為具有與遮光部110之形成區域中之抗蝕膜ι〇3同 程度之厚度者，而暫定圖案l〇3d所具有之抗蝕膜103之厚 度可設得較上述厚度薄，亦可設為與例如半透光部115之 形成區域中之抗蝕膜103同程度之厚度。於該情形時，暫 156467.doc •33- 201227166 定圖案则之抗姓賴3於將第】抗触圖案叫減膜期間被 除去，於其後之第2钮刻步驟中使暫定圖案_消失時， 可降低產生例如對空白光罩1〇b上之抗银材料之再附著等 之虞。 本發明利用活性氧等活性物質進行抗_案之減膜時， 因根據抗钱圖案之疏密差所消耗之活性物質之量不同，故 可防止產生減膜速度之面此，不僅電聚灰 化，對於具有上述問題之抗钱劑灰化方法亦可適用。亦可 適用於例如使用臭氧或活性氧之對抗敍圖案供給臭氧水之 灰化方法、對抗姓圖案供給臭氧氣體之灰化方法、對抗姓 圖案照射紫外線或真空紫外線之灰化方法、或組合 灰化方法。 例如’使用臭氧水之灰化方法中，可於2 ppm〜150 ppm 之範圍内調整臭氧水之濃度，從而使減膜量之調整成為可 能。因此，為精密地控制減膜量，較理想的是設為2 PPm〜5〇啊之範圍者’進而較佳為2 PPm〜30 ppm。藉由 將臭氧設為如此之濃度’易控制減膜量，從而使較控制線 寬更精密之抗蝕圓案之減膜成為可能。若將此時之 供給量換算為光罩之每單位面積，則變成2〇〇 。更佳為可為 2〇〇 m cm侧〜〇.50 mI/cm2.min。只要為該範圍之供給量即 便於臭氧濃度較低之情形時，亦可將活性氧之供給量設為 過量之狀態’故較佳。又’該供給量例如可以供給之臭氣 水量除以進行處理之空白光罩基板之面積而獲得。又，臭 156467.doc -34- 201227166 氧濃度可藉由利用臭氧吸光度等之公知之測定裝置而測 定，且可測定即將供給至抗蝕圖案之前之濃度。 【圖式簡單說明】 圖Ua)-(g)係本發明之第丨實施形態之多調式光罩之製造 步驟之流程圖。 圖2係表示使用本發明之第丨實施形態之多調式光罩之圖 案轉印方法之刮面圖。 圖3(a)-(g)係本發明之第2實施形態之多調式光罩之製造 步驟之流程圖。 圖4(bl)-(b3)係表示本發明之第1實施形態之抗蝕圖案減 膜步驟之機制之剖面圖。 圖5(bl)-(b3)係表示本發明之第2實施形態之抗蝕圖案減 膜步驟之機制之剖面圖。 圖6(bl)-(b3)係表示參考例之抗蝕圖案減膜步驟之機制 之剖面圖。 圖7(a)-(c)係表示參考例之多調式光罩之製造方法之說 明圖。 έ圖8係表示本發明之第1實施形態之對空白光罩的一種描 、:, 曰（a)係表示包含遮光部資料、透光部資料、及 半透光部資料之合成f料之平面圖’（b)係表示自⑷所示 之合成資料分離出之遮光部資料及透光部資料之平面圖，The active oxygen is brought into contact with the semi-transmissive film 101. It can be made by the inclusion of the semi-transmissive film 101 to capture or deactivate the active oxygen, thereby making it possible to locally suppress the film-reduction rate of the sparse region and bring it closer. In the dense area of the film, you can also say that it is four-sided. Further, the formation precision of the second resist pattern 104p can be improved, and the formation precision of the transfer pattern can be improved. Further, according to the first embodiment, the line width control of the pattern can be more effectively performed by simultaneously obtaining the above-described effect of preventing the positional shift between the patterns and improving the accuracy of the formation of the transfer pattern. Specifically, the pattern line width does not deviate from the design value, and does not cause an in-plane deviation of the difference between the design value and the actual line width (in the case of not 0). In other words, the actual line width relative to the design value is not biased toward the positive side or the negative side, and the difference tends to be fixed in-plane. In other words, the accuracy of the overlap between the semi-transmissive portion and the light-shielding portion can be improved, and the in-plane uniformity of the line width can be improved. Therefore, the pattern of the TFT substrate or the like has a pattern of symmetry (for example, the 'light transmitting portion' light blocking portion, the semi-light transmitting portion, the light shielding portion, and the light transmitting portion are arranged in one direction in this order, and are located in two directions with respect to the semi-transmissive portion. In the case where the line width of the side light-shielding portion is the same, etc., the problem of the symmetry cannot be maintained due to the positional shift caused by the second-time drawing in the previous method. Further, it is possible to suppress the variation in the line width variation in the plane caused by the cause of the difference in pattern density and the aperture ratio, and it is also easy to control the manufacturing process of the target line width. <Second Embodiment of the Invention> Next, a second embodiment of the present invention will be described with reference to Fig. 3 . In the embodiment, the subtraction film of the i-th anti-surname pattern kiss is left in the formation region of the light-transmitting portion (10), and the semi-transmissive film 1〇1' is exposed in the semi-transmissive film ι〇ι 156467.doc -27 In the second embodiment, the first resist pattern 103p is formed by the provision of a predetermined resist pattern by the formation region of the light transmitting portion 120, and the resist pattern is exposed. . In the second embodiment, when the first resist pattern 10b is formed, a tentative pattern (tentative resist pattern) 10d is formed in the region where the light transmitting portion 120 is formed, and the tentative pattern 103d is formed. The resist film 103 is different from the above-described first embodiment in that the first resist pattern 10b is reduced while the active oxygen is partially consumed. Hereinafter, differences from the above-described first embodiment will be described in detail with reference to FIG. 3. (1) Method for manufacturing multi-tone mask (blank substrate preparation step for photomask) In the manufacturing step of the multi-tone mask 10 of the second embodiment, as described in FIG. 3(a), The blank mask 10b is the same as the i-th embodiment. (First resist pattern forming step) A second anti-contact pattern covering the formation region of the light-shielding portion 110 and the formation region of the semi-light-transmitting portion 115 is formed in the same manner as in the first embodiment described above. At this time, a tentative pattern 1〇3d is formed in a region where the light transmitting portion 120 is formed. The temporary pattern 10 3 d is not the final structure, that is, the transfer pattern remains (not included in the transfer pattern of the multi-tone mask 10 to be obtained), but it is on the eve. In the manufacturing step of the peripheral reticle 10, it is used to improve the pattern forming and production. For example, in the case of film-reduction of the third anti-button pattern 103p in the second resist pattern forming step, the in-plane effect of increasing the film-reducing speed has an effect as an auxiliary pattern. 156467.doc -28- 201227166 Further, the line width of the provisional pattern l〇3d is preferably not too large, which is in the removal step of the temporary pattern l〇3d described below, and the semi-transparent film on the lower layer side. The dissolution of 1 01 was simultaneously and quickly peeled off. That is, the tentative pattern 1 d is preferably 丨μηη or less, preferably 〇5 μηι or less, more preferably 〇.! μη1 or less, as a part of the gap between the adjacent pattern and the pattern. Preferably, it is i μιη or more 'preferably 2 μιη to 4 μιη or so. That is, if the tentative pattern 103d is formed by lines and spaces, the line width of the line portion is preferably 0.01 μχη to 1.0 (four), further preferably 〇〇1 μιη to 〇5 _, and more preferably 0.01 μηχ~(Μ μιη Further, the gap portion may be about 1 (four) to 4 _. However, the tentative pattern 103d is not limited to the line and the gap, and the pattern having the same size is disposed in the region where the light transmitting portion 120 is formed (a dot pattern or the like, In the second embodiment, the film containing at least one of the laminated films is removed, and the film containing the film and formed on the film above the film is removed as peeling. For example, on a transparent substrate, When the semi-transparent film, the light-shielding film, and the anti-(4) are formed in this order, the light-shielding film and the anti-(four) are combined with the semi-transmissive film by the contact removal of the semi-transmissive film, and are removed by peeling off. The tentative pattern 103 (1 anti-synthesis film 1〇3 is adjusted to (4) by the supply and demand of active oxygen when the first collar pattern 1〇3Ρ is reduced, and must be reduced by the second resist pattern 1〇3p At the time of 'being in the formation region of the light transmitting portion 12〇 and exposing the surface', but the film There is no particular limitation. Therefore, the film thickness "which may be the same as that of the light-shielding film 110" may be the same as that of the semi-transmissive portion 115 (relatively 4). The film thickness here is set to have the same thickness as that of the silver-resistant film 103 in the formation region of the light-shielding portion 156467.doc • 29 to 201227166. The first resist pattern i including the tentative pattern 103p is formed. The state of 〇3p is shown in Fig. 3(b). (First etching step) Next, the light-shielding film 1 is etched by using the formed first resist pattern 103p as a mask in the same manner as in the first embodiment described above. 2, the light-shielding film pattern 102p is formed. At this time, the tentative pattern i〇3d is used as a mask to form a tentative light-shielding film pattern. A state in which the light-shielding film pattern 10b is formed is shown in Fig. 3(c). 2 Resist pattern forming step) Next, the first anti-surname pattern l〇3p is thinned, and the light-shielding film 102 in the formation region of the semi-transmissive portion 115 is exposed to form a second anti-correlation region covering the formation region of the light-shielding portion no The surname pattern ι〇4ρ. At this time, it will also resist in the tentative pattern 1〇3d. The film 103 is reduced in film. The state of the film is shown in Fig. 3(d). The film of the first resist pattern 103p is reduced in the same manner as in the first embodiment described above, and the first resist pattern 10 3 p is supplied with active oxygen by any method. In the second embodiment, the semi-transmissive film 101 having an effect of reacting with active oxygen is exposed, and the first resist is placed in a state where the tentative pattern 103d is placed in the region where the light transmitting portion 120 is formed. The pattern ι〇3ρ is reduced in film, whereby one part of the active oxygen supplied to the first anti-surname pattern 1〇3ρ can be consumed, and the in-plane uniformity of the film speed can be further reduced. FIG. 5 shows the second embodiment. A cross-sectional view of the film-removing mechanism of the first resist pattern 103p in the form. In Fig. 5, '(b 1) shows the configuration of the first resist pattern 丨03ρ before the film is removed; (b2) shows the case where the first resist pattern (7) is reduced by the active oxygen; (b3) shows that The second resist pattern 1〇4{) obtained by the film reduction is used as a cover 156467.doc • 30-201227166 and a silver-cut light-shielding film is formed to form a transfer pattern. As shown in FIG. 5, the "first resist pattern 1" according to the second embodiment can be consumed by each of the sparse area and the dense area by arranging the tentative pattern l3d in the sparse area. The consumption of active oxygen per unit area is uniform. That is, a part of the generated active oxygen is consumed by the resist film 103 constituting the tentative pattern i 〇 3d -. Then, the in-plane difference in the amount of active oxygen consumed per unit area consumed by the first resist pattern 1 〇 3p is reduced by the area per unit area consumed by the resist film 103 of the tentative pattern 103d. The amount of active oxygen consumed is filled. As a result, the in-plane uniformity of the film-removing speed can be further improved, and the shape control of the second resist pattern 104p formed by the film can be more accurately performed. Further, the consumption of active oxygen of the resist 臈1〇3 means that the material constituting the resist film 103 reacts with the active oxygen and is decomposed, and the active oxygen does not react with the material. (Second etching step) Next, the second anti-buckle pattern l〇4p and the exposed light-shielding film 102 are used as masks in the same manner as in the first embodiment described above, and the semi-transmissive film 1〇1 is wet-type. Etching to form a semi-transmissive film pattern 101p. At this time, the tentative pattern 103d is a pattern having a small line width, so that the semi-transmissive film ii located on the lower layer side thereof is wet-etched, and the film of the upper layer is self-substrate from the semi-transparent film by peeling. Remove. At this time, the provisional light-shielding film pattern including the layer below the tentative pattern 103d is also removed. Thereby, the transparent portion 12 of the transparent substrate 10 is formed. This state is illustrated in Fig. 3(e). As described above, since the provisional pattern 103d in the second etching step can be eliminated, the step of removing the tentative pattern 103d is no longer required. Further, a light-transmitting portion 156467.doc 201227166 110 〇 having a specific transmittance can be formed (third etching step), and then the second resist pattern 10 〇 4p is used as a mask as in the first embodiment described above. The light-shielding film 1〇2 is etched to expose the semi-transmissive film 1〇1 again. The state in which the third etching step is performed is exemplified in Fig. 3(f). (Second resist pattern removing step) Then, in the same manner as in the first embodiment described above, the second resist pattern 1〇4p is removed to complete the manufacture of the multi-mode mask 1 of the present embodiment. A state in which the second resist pattern is removed is exemplified in Fig. 3(g). The multi-tone mask 10 exemplified in the above Fig. 3(g) also has the same shape, optical characteristics, and the like as those of the above-described first embodiment. (2) Effects of the second embodiment It is convenient for the second embodiment to have the same effects as those of the first embodiment. That is, regardless of the pattern shape (dense density, peripheral aperture ratio), an extremely high film-reducing behavior in which the in-plane uniformity is obtained can be obtained. Further, according to the second embodiment, a part of the active oxygen supplied to the i-th resist pattern 1 〇 3 ρ is consumed by the resist film 1 〇 3 constituting the tentative pattern 〇 3d. Thereby, the difference in the in-plane of the consumption amount of the active oxygen per unit area consumed by the filming of the first resist pattern 103p can be consumed by the resist film 1 〇3 constituting the tentative pattern 103d. The amount of active oxygen consumed per unit area is filled, and the first resist pattern 1031) can be reduced. Therefore, the in-plane uniformity of the two film-removing speeds can be further raised, and the formation precision of the second resist pattern l〇4p can be improved. Further, according to the second embodiment, in the second etching step, the tentative pattern 156467.doc - 32 - 201227166 l 〇 3d is peeled off by wet etching of the semi-transmissive film ι ι located on the lower layer side. Thereby, the step for removing the tentative pattern i 〇 3d is no longer required. Further, according to the second embodiment, as described above, since the tentative pattern l〇3d disappears, the transmittance of the specific light transmitting portion 11〇 does not remain any, and the transfer pattern to be obtained can be formed. . <Other Embodiments of the Invention> The embodiments of the present invention have been specifically described above, but the present invention is not limited to the above-described second and second embodiments, and can be made without departing from the scope of the invention. Various changes. In the above-described first and second embodiments, the semi-transmissive film 1〇1 includes, for example, molybdenum (Mo) such as MoSi, and may contain other metal materials such as tungsten silicide (WSi) or nickel telluride (NiSi).矽 (Si) material. Further, it may contain a niobium alloy, a niobium nitride, an oxide, a carbide, or the like, or may be compounded with the above materials. In the second embodiment described above, the tentative pattern 1 〇 3d is included as a plurality of thin lines, but the shape of the tentative pattern 1 〇 3d is not limited thereto. For example, the tentative pattern l〇3d may be dispersed in the formation region of the light transmitting portion 12A. In this case, it is desirable that the size of the dots does not hinder the removal of the tentative pattern l〇3d in the second etching step. In the second embodiment, the resist pattern 103 included in the tentative pattern l〇3d has a thickness equal to that of the resist film ι 3 in the region where the light shielding portion 110 is formed, and the tentative pattern l〇 The thickness of the resist film 103 included in 3d may be set to be thinner than the above thickness, or may be set to a thickness equivalent to that of the resist film 103 in the region where the semi-transmissive portion 115 is formed. In this case, the 156467.doc •33-201227166 fixed pattern is anti-surnamed Lai 3, the first anti-touch pattern is removed during the film-reduction process, and the tentative pattern _ disappears in the second step of the engraving step At this time, it is possible to reduce the occurrence of, for example, re-adhesion of the silver-resistant material on the blank mask 1b. When the present invention utilizes an active material such as active oxygen to carry out the filming of the anti-film, since the amount of the active material consumed according to the difference in the density of the anti-money pattern is different, it is possible to prevent the occurrence of the film-reducing speed, which is not only the electric ash. For the anti-money agent ashing method having the above problems, it is also applicable. It can also be applied to, for example, an ashing method for supplying ozone water using an anti-synchronization pattern of ozone or active oxygen, a ashing method for supplying an ozone gas against a surname pattern, a ashing method for irradiating ultraviolet rays or vacuum ultraviolet rays against a surname pattern, or a combination ashing method. For example, in the ashing method using ozone water, the concentration of ozone water can be adjusted within the range of 2 ppm to 150 ppm, thereby making it possible to adjust the amount of film reduction. Therefore, in order to precisely control the amount of film reduction, it is preferable to set it to a range of 2 PPm to 5 Å, and further preferably 2 to 100 ppm. By setting the ozone to such a concentration, it is easy to control the amount of film reduction, thereby making it possible to reduce the film thickness of the resist pattern which is more precise than the control line width. If the supply amount at this time is converted to the unit area of the mask, it becomes 2 〇〇. More preferably, it may be 2 〇〇 m cm side ~ 〇.50 mI/cm2.min. When the supply amount in the range is such that the ozone concentration is low, the supply amount of the active oxygen may be in an excessive state, which is preferable. Further, the supply amount is obtained, for example, by dividing the amount of odor water that can be supplied by the area of the blank mask substrate to be processed. Further, the odor 156467.doc -34 - 201227166 can be measured by a known measuring device using ozone absorbance or the like, and the concentration immediately before being supplied to the resist pattern can be measured. BRIEF DESCRIPTION OF THE DRAWINGS Figures Ua)-(g) are flowcharts showing the steps of manufacturing a multi-mode mask of the third embodiment of the present invention. Fig. 2 is a plan view showing a pattern transfer method using a multi-tone mask according to a third embodiment of the present invention. Fig. 3 (a) - (g) are flowcharts showing the steps of manufacturing the multi-mode mask of the second embodiment of the present invention. Figs. 4(b1) to 4(b3) are cross-sectional views showing the mechanism of the resist pattern thinning step in the first embodiment of the present invention. Figs. 5(b1) to 5(b3) are cross-sectional views showing the mechanism of the resist pattern thinning step in the second embodiment of the present invention. Figures 6(b1)-(b3) are cross-sectional views showing the mechanism of the resist pattern thinning step of the reference example. Fig. 7 (a) - (c) are explanatory views showing a method of manufacturing a multi-tone mask of a reference example. FIG. 8 is a view showing a blank mask according to the first embodiment of the present invention: 曰(a) shows a composite material including a light-shielding portion data, a light-transmitting portion data, and a semi-transmissive portion data. The plan view '(b) is a plan view showing the light-shielding data and the light-transmitting portion data separated from the synthetic data shown in (4).
⑷係表示自⑷所示之合成資料分離出之半透光部資二之 平面圖。 H IT 圖9係表示於本發明之第i實施形態之空白光罩之抗㈣ 156467.doc -35- 201227166 上描繪叫)之描繪圖案時 圖10係圖⑹之剖面圖C佈之平面圖。 圖案之空白光罩之剖面圖 顯=姓膜上描緣出· 之剖面圖。 ⑻係顯影有抗—之空白光罩 圖ll(a)-(e)係表示本發明 其他描繪方法之流程圖。 之第1實施形態之 對空白光罩的 圖12係表示用於本發明之第1實施形態之斜空白光罩的 其他描繪方法之描繪圖案之圖。 【主要元件符號說明】 10 10b ' 10b' 30 100、100， 101、10Γ 101p 102 、 102' 102p 103 、 103' 103d 103p 、 103p， 104p ' 104p' 110 、 110， 110a 、 110b llOd 多調式光罩 空白光罩 轉印體 透明基板 半透光膜 半透光臈圖案 遮光膜 遮光膜圖案 抗钮膜 暫定圖案 第1抗Ί虫圖案 第2抗姓圖案 遮光部 遮光部圖案 遮光部資料 156467.doc -36- 201227166 115、115， 半透光部 115a 遮光圖案 115b 透過圖案 115d 半透光部資料 115p 半透光部圖案 120、120- 透光部 120d 透光部資料 1 20p 透光部圖案 300 基板 301 被加工層 302 正型抗蝕膜 302p 抗蝕圖案 156467.doc - 37 -(4) is a plan view showing the semi-transmissive portion 2 separated from the synthetic material shown in (4). H IT Fig. 9 is a plan view showing a cross-sectional view C of the blank mask of the first embodiment of the present invention, which is shown in Fig. 10 (Fig. 10). A cross-sectional view of the blank mask of the pattern. (8) Blank reticle for developing development - Fig. 11(a)-(e) are flow charts showing other drawing methods of the present invention. In the first embodiment, Fig. 12 is a view showing a drawing pattern of another drawing method of the oblique blank mask according to the first embodiment of the present invention. [Main component symbol description] 10 10b ' 10b' 30 100, 100, 101, 10 Γ 101p 102 , 102 ' 102p 103 , 103 ' 103d 103p , 103p , 104p ' 104p ' 110 , 110 , 110a , 110b llOd multi - mode mask Blank mask transfer body transparent substrate semi-transparent film semi-transparent 臈 pattern shading film shading film pattern anti-button film tentative pattern 1st anti-mite pattern 2nd anti-surname pattern shading part shading part pattern shading part information 156467.doc - 36-201227166 115, 115, semi-transmissive portion 115a light-shielding pattern 115b transmission pattern 115d semi-transmissive portion data 115p semi-transmissive portion pattern 120, 120 - light-transmitting portion 120d light-transmitting portion data 1 20p light-transmitting portion pattern 300 substrate 301 Processed layer 302 positive resist film 302p resist pattern 156467.doc - 37 -