201210097 六、發明說明： 【發明所屬之技術領域】 本發明係有關-種振子裝置之製造方法，其顧於譬如騎機、筆纪 型電腦、汽車電子等各種電子產品，特別是指—種貫孔式振子裝置晶圓級 封裝結構之製造方法。 【先前技術】 石英元件具有穩定的壓電特性，能夠提供精準且寬廣的參考頻率、時 修脈控制、定時功能與過遽雜訊等功能，此外，石英元件也能做為運動及麼 力等感· ’以及重要的光學藉；因此，對於電子產品而言，石英元件 扮演著舉足輕重的地位。 而針對石英振子晶體的封裝，前案提出了許多種方案，譬如美國專利 公告第5030875號專利「犧牲式石英晶體支榜架」（贿ificki轉心咖 _m) ’屬於早期金屬蓋體（Metal Cap)的封裝方式，整體封裝結構複雜、 體積無法縮小。美國專利公告第6545392號專利「壓電共振器之封裝結構」 (Package structure for a piezoelectric resonator) ’ 主要採用陶瓷封農體來封 裝石英音又振子’並改良喊基座（Paekage)與上蓋（Lid)結構使得石 英音又振子具有較佳的抗震性，然而，該封裝體成本高且尺寸無法進一步 降低。 美國專利公告第6531807號專利「壓電裝置」（piezoeleetric Device：)， 主要針對在不同區域之陶瓷基座進行石英振子與振盪電路晶片之封裝，並 利用陶瓷基座上之導線做電氣連接，同時振盪電路晶片以樹脂封裝，石英 振子則以上蓋做焊接封裝（seam welding);然而’由於兩晶片各放在不同 201210097 品免且獨究基座為封裝體’因此使得面積加大且製作成本居高不下。 〇—〇 ’主要將石英⑼與㈣電路分別靖絲裝體封裝後，再進行 電氣連接的動作，雖可有雜,!、__，但麵體積仍無法有效降低， 同時該封裝方式之製作成本也相對較高。 而美國專利公告第76()8986號專利「石英晶體振㈣」（_ζ crystal resonator)，主要為晶圓級難形式，其主要將玻璃材質㈤pi拙細） 之上蓋與下基座’與石英晶片藉由陽極接合完成一三明治結構。然而，此 -二明治結構由於基材與石英之熱膨脹係數不同，因此當溫度變化時會造 成内部石英晶片產生熱應力，使得頻率隨溫度而產生偏移現象。因此，需 要特別選擇石英晶片之切角與上蓋和下基座材料之熱膨脹係數，才有辦法 克服此困難點，然而在製作上和成本上都比較費工。 上述專利之先前技術，皆無法跳脫目前採用陶莞基座封裝的箸境，不 僅產品成本高且貨源不穩定，且三明治狀的封裝結構所導致之熱應力問 題’仍舊無法有效予以解決。 【發明内容】 鑒於以上的問題，本發明的主要目的在於提供一種貫孔式振子裝置晶 圓級封裝結構之製造方法’跳脫目前採_£基座封裝的窘境，產品成本 降低且貨源穩定，並改善三明治封裝結構解致之熱應力問題，利用貫孔 連接方式，使得製程可批次生產並在晶圓上完成整體封裝；同時，藉由外 緣無溝槽平面的設計，大幅減少污染物的堆積，且獅封裝環來作為_ 之遮罩，不僅簡化製程，騎亦降低了製㈣成本。 201210097 因此，為達上述目的’本發明所揭露之—種貫孔式振子裝置晶圓級封 裝結構之製造方法，首先提供上蓋，並於上蓋形成封裝環層，其製作方法 依材料性質而不同；當封裝環料金屬材質時，譬如為鋼、錫金、銀、 銦及上述金屬之合金，可藉由濺鍍方式（Sputter)或蒸鑛方式（Evap〇倉) 製作；當封裝環層為有機聚合物材質時，則可藉由旋塗（spinc〇ating)的方 式製作；又或者當封裝環層為氧化物材質時，則可藉由化學氣相沉積（c刪 或熱氧化製程（thermal Oxidation)等陽極氧化接合技術（an〇dicb〇nding) φ 來達成。 騎，針對封裝環層進行_化_成雌環，並_雜環作為遮 罩而於上蓋姓刻出凹槽；接著提供基座，此基座具有至少一個導電通孔， 並黏合振子單元於基座，且解電通孔構成魏連接；錢結合上蓋與基 座’且上蓋之封裝環騎準基座之封裝環，封裝環之外緣與上蓋、基座切 齊，而構成完整無溝槽的平面，以減少污染物的堆積；而封裝環與上蓋或 基座之凹槽的邊緣切齊’而增加了職環的面積，可提高接合強度與密封 驗效果；最後’於基絲部製作基座金屬料，完成整體封裝製程。 為使對本發明之目的、特徵及其功能有進一步的了解，兹配合圖式詳 細說明如下： 【實施方式】 根據本發明所揭露之貫孔式振子裝置晶圓級封裝結構之製造方法，首 先請參閱第！冑’為本發明貫孔式振子裝置晶圓級封裝結構第一實施例之 示意圖。 根據本發騎揭露之貫孔式振子裝置晶圓級封裝結構包含有振子單元 5 201210097 ^上蓋Η)、基座4G、封裝環㈣及導電通孔％，振子單元料為溫度 "角（AT石央晶體振子、音叉型石英晶體振子等石英晶ft振子或 其它機械共振赋振子，且鮮單元2G之上、下表齡雛有上表面電極 與下表面電極22 (見第2圖），細練振子單元2()，並透過導電凸塊 23電性連接至底部基座4()之基座金屬焊墊4卜其巾，上表面電極^與下 表面 22分別位於振子單元2Q之相侧，且導電凸塊23可為銀粉顆粒 與樹脂等組成之導電膠材或金屬凸塊，其中金屬凸塊可由金、銅、錫、銀、 銦或其合金之一構成。 因此，振子單元20配置於基座4〇之上，而基座4〇外緣設置有封裝環 3〇，此封裝環30可藉由銅、錫、金、銀、銦及上述金屬之合金、有機聚合 物、氧化物等材質所構成；若職環3G為金騎f，且上蓋⑴及基座 右可導電，則兩者間必須有—層絕緣物，以避免上蓋ig及基座4G發生導 通之情形。藉由封裝環3G用以提供上蓋ω予以封裝設置，且上蓋ι〇具有 凹槽11來容設振子單元20。故，上蓋1〇、基座4〇透過封裝環3〇，而可將 振子單it 20作氣密封裝，其_魏可域空錢絲氮氣；上蓋1〇的 材質可為（玻璃、石英、陶莞、金屬材料等，基座4()的材質亦可為石夕、 玻璃、石央、陶竞等非導電材料，再者，若將其兩者（上蓋1續基座4〇) 選用相同材質’可進-步防止熱應力之問題。 且封裝環3〇之外緣與上蓋1〇、基座4〇切齊，而構成完整無溝槽的平 面’以減少污染物的堆積；而封裝環3G之内緣與上蓋⑴之凹槽u的邊緣 切齊’可增加了封裝環3G的面積，提高接合強度與密封效果。 導電通孔5〇垂直貫穿基座4〇設置，其材質可為金屬導電材質，譬如 201210097 銅、鶴、鋁、銀、金及上述金屬之合金等，或者，導電通孔5〇亦可為多晶 石夕或是導Μ分子，W料電均可，並且利时導通孔（Throughsilic〇n via ; TSV)技術予以成型。導電通孔5〇上面電性連接於振子單元2〇之上 表面電極21與下表面電極η，並將其電性連接至基座金屬焊塾41，使其 可與外部做電性連接，提供電能與訊號輸入與輸出。 請參閱第3A〜3E ® ’為本發明貫孔式振子裝置晶圆級封裝結構第一實 施例之上蓋的製作流程示意圖。 首先，提供上蓋10 (見第3A圖），並於上蓋1〇上製作一層封裝環層 301 (見第3B圖）’其製作方法依材料性質而不同；當封裝環層3〇ι為金屬 材質時，譬如為銅、錫、金、銀、銦及上述金屬之合金，可藉由濺锻方式 (Sputter)或蒸鍍方式（Evap〇rat〇r)製作；當封裝環層3〇1為有機聚合物 材質時’則可藉由旋塗（spinc〇ating)的方式製作；又或者當封裝環層則 為氧化物材料’貞彳可藉纟化秋相沉積（CVD)或減化縣⑽⑽! Oxidation)等陽極氧化接合技術來達成。 接著藉由黃光顯影製程，將封裝環層3()1圖形化而形成封裝環％，並 予以開孔露出部分上蓋1G之區域（見第3C圖）。接著，利舰絲刻製程 來於上蓋10上製作凹槽11 (見第3D圖），譬如為K〇H或tmah溶液等 敍刻液此時’ _化封裝環3G可作為此—製程之遮罩，藉以更進一 步簡化製作流程’並降低製作成本。另—方面，如第3E圖所示，亦可藉由 乾式侧製雜作_ U，域_合電麟子侧㈤牆201210097 VI. Description of the Invention: [Technical Fields of the Invention] The present invention relates to a method for manufacturing a vibrator device, which is related to various electronic products such as a rider, a pen-type computer, an automobile electronics, and the like, particularly Manufacturing method of wafer level package structure of a hole type oscillator device. [Prior Art] Quartz components have stable piezoelectric characteristics, which can provide accurate and wide reference frequency, time pulse control, timing function and noise, and quartz components can also be used for sports and power. Sense · 'and important optical borrowing; therefore, for electronic products, quartz components play a pivotal role. For the encapsulation of quartz crystal oscillator crystals, many proposals have been made in the previous case. For example, U.S. Patent Publication No. 5030875 "sacrificial quartz crystal support rack" (a bribe ificki to heart coffee _m) 'belongs to the early metal cover body (Metal Cap) package method, the overall package structure is complex, and the volume cannot be reduced. U.S. Patent No. 6,654,392, "Package structure for a piezoelectric resonator" mainly uses a ceramic enclosure to encapsulate a quartz sound and a vibrator, and improves the Paekage and the upper cover (Lid). The structure makes the quartz sound and the vibrator have better shock resistance. However, the package is costly and the size cannot be further reduced. U.S. Patent No. 6,531,807, "Piezoeleetric Device", which is mainly used for encapsulating a quartz crystal oscillator and an oscillating circuit chip in a ceramic pedestal in different regions, and electrically connecting the wires on the ceramic pedestal, and simultaneously The oscillating circuit chip is packaged in resin, and the quartz vibrator is covered by the above cover for seam welding; however, 'because the two wafers are placed in different 201210097 products and the pedestal is the package body', the area is increased and the manufacturing cost is high. No high. 〇-〇' mainly installs the quartz (9) and (4) circuits separately, and then performs the electrical connection. Although there may be impurities, !, __, the surface volume cannot be effectively reduced, and the manufacturing cost of the package is also reduced. It is also relatively high. U.S. Patent No. 76(8986), "Quartz Crystal Vibrating", is mainly a wafer-level difficult form, which mainly uses a glass material (five) and a lower pedestal and a quartz wafer. A sandwich structure is completed by anodic bonding. However, since the temperature difference between the substrate and the quartz is different, the internal quartz crystal generates thermal stress when the temperature changes, so that the frequency shifts with temperature. Therefore, it is necessary to specifically select the chamfer angle of the quartz wafer and the thermal expansion coefficient of the upper and lower base materials in order to overcome this difficulty, but it is laborious in terms of production and cost. The prior art of the above patents cannot escape the current dilemma of using the Taowan base package, which not only has high product cost and unstable supply, but also the thermal stress problem caused by the sandwich-like package structure cannot be effectively solved. SUMMARY OF THE INVENTION In view of the above problems, the main object of the present invention is to provide a manufacturing method of a wafer-level package structure of a through-hole type vibrator device, which is a dilemma of the current pedestal package, and the product cost is reduced and the supply is stable. And improve the thermal stress problem caused by the sandwich package structure, using the through-hole connection method, the process can be batch-produced and complete package on the wafer; at the same time, the design of the outer edge without groove plane can greatly reduce the pollutants. The accumulation, and the lion's encapsulation ring as a mask for _ not only simplifies the process, but also reduces the cost of the system. 201210097 Therefore, in order to achieve the above object, the manufacturing method of the wafer-level package structure of the perforated vibrator device disclosed in the present invention firstly provides an upper cover and forms a package ring layer on the upper cover, and the manufacturing method thereof differs depending on the material property; When the ring material is made of metal, such as steel, tin gold, silver, indium and alloys of the above metals, it can be made by sputtering or steaming (Evap silo); when the encapsulating ring layer is organically polymerized When the material is made, it can be made by spin coating. Or when the encapsulation ring is made of oxide, it can be deposited by chemical vapor deposition (thermal Oxidation). The anodic oxidation bonding technique (an〇dicb〇nding) φ is achieved. Riding, the encapsulation ring layer is _ _ into the female ring, and the _ heterocycle is used as a mask to engrave the groove in the upper cover; The pedestal has at least one conductive through hole, and the vibrator unit is bonded to the pedestal, and the detachable through hole constitutes a Wei connection; the money is combined with the upper cover and the pedestal and the package ring of the upper cover is mounted on the pedestal of the package, and the package ring is outer The edge is aligned with the upper cover and the base to form a complete groove-free plane to reduce the accumulation of contaminants; and the encapsulation ring is aligned with the edge of the upper cover or the groove of the base to increase the area of the occupation ring. Improve the joint strength and sealing test effect; finally, make the base metal material in the base wire part to complete the whole packaging process. In order to further understand the purpose, features and functions of the present invention, the following detailed description is given as follows: EMBODIMENT OF THE INVENTION According to the manufacturing method of the wafer-level package structure of the through-hole type vibrator device disclosed in the present invention, first, the first embodiment of the wafer-level package structure of the through-hole type vibrator device of the present invention is described. The wafer-level package structure of the through-hole type oscillator device according to the present invention includes a vibrator unit 5 201210097 ^top cover 、), a pedestal 4G, a package ring (4), and a conductive via hole %, and the vibrator unit material is a temperature "angle (AT) Quartz crystal horn oscillators such as Shiyang crystal oscillators, tuning fork quartz crystal oscillators, or other mechanical resonance oscillators, and the upper unit 2G and the lower surface have the upper surface electrode and the lower surface. 22 (see Fig. 2), the vibrator unit 2 () is carefully guided, and is electrically connected to the base metal pad 4 of the bottom base 4 () through the conductive bumps 23, the upper surface electrode ^ and the lower surface 22 is located on the phase side of the vibrator unit 2Q, and the conductive bumps 23 can be conductive paste or metal bumps composed of silver powder particles and resin, wherein the metal bumps can be made of gold, copper, tin, silver, indium or alloys thereof. Therefore, the vibrator unit 20 is disposed on the base 4〇, and the outer edge of the base 4〇 is provided with a package ring 3〇, and the package ring 30 can be made of copper, tin, gold, silver, indium and the above metal. Alloy, organic polymer, oxide and other materials; if the ring 3G is gold riding f, and the upper cover (1) and the base can be electrically conductive, there must be a layer of insulation between the two to avoid the upper cover ig and base The case where the seat 4G is turned on. The package ring 3G is provided for providing the upper cover ω, and the upper cover ι has a recess 11 for accommodating the vibrator unit 20. Therefore, the upper cover 1 〇 and the pedestal 4 〇 are transmitted through the package ring 3 〇, and the vibrator single unit 20 can be hermetically sealed, and the material of the upper cover 1 可 can be (glass, quartz, ceramics and wan). Metal materials, etc., the material of the base 4 () can also be non-conductive materials such as Shi Xi, glass, Shi Yang, Tao Jing, etc., if both (the upper cover 1 continues the base 4 〇) use the same material 'The problem can be prevented from thermal stress. And the outer edge of the encapsulation ring 3〇 is aligned with the upper cover 1〇 and the base 4〇, and constitutes a complete groove-free plane' to reduce the accumulation of contaminants; and the encapsulation ring The inner edge of 3G is aligned with the edge of the groove u of the upper cover (1), which can increase the area of the package ring 3G, and improve the joint strength and sealing effect. The conductive through hole 5 〇 is vertically disposed through the base 4〇, and the material thereof can be metal Conductive material, such as 201210097 copper, crane, aluminum, silver, gold and alloys of the above metals, or conductive through-holes 5〇 can also be polycrystalline stone or lead molecules, W material can be, and profit Through-hole (Throughsilic〇n via; TSV) technology is formed. The conductive via 5 is electrically connected to The upper surface electrode 21 and the lower surface electrode η of the vibrator unit 2 are electrically connected to the base metal pad 41 so as to be electrically connected to the outside to provide electrical energy and signal input and output. 3A~3E ® ' is a schematic diagram of the manufacturing process of the cover on the first embodiment of the wafer-level package structure of the through-hole vibrator device of the present invention. First, the upper cover 10 is provided (see FIG. 3A), and a package is formed on the upper cover 1 〇 The ring layer 301 (see FIG. 3B)'s manufacturing method differs depending on the nature of the material; when the encapsulating ring layer 3 is made of a metal material, such as copper, tin, gold, silver, indium, and an alloy of the above metals, It is made by Sputter or Evap〇rat〇r; when the encapsulation ring layer 3〇1 is made of organic polymer, it can be made by spin coating. Or when the encapsulation ring layer is an oxide material, it can be achieved by anodizing bonding technology such as deuteration (CVD) or subtractive county (10) (10)! Oxidation. Next, the package ring layer 3 () 1 is patterned by a yellow light developing process to form a package ring %, and the opening is exposed to expose a portion of the upper cover 1G (see Fig. 3C). Next, the ship is engraved to make a groove 11 on the upper cover 10 (see Figure 3D), such as K〇H or tmah solution, etc. At this time, the package ring 3G can be used as the cover of the process. Covers to further simplify the production process' and reduce production costs. On the other hand, as shown in Figure 3E, it can also be made by dry side-made _ U, domain _ electric lining side (five) wall
Plasma Reactive Ion Etching)製程。 請參閱第4A〜4G圖，為本發明貫孔式振子裝置晶圓級封裝結構第一實 7 201210097 施例之基座的製作流程示意圖。 首先提供基座4〇 (見第4八圖），接著在基座*上製作一層金屬層 60(見第4B圖），其製作方法可藉由減鍵方式（sputter)或蒸鑛方式 (Evaporator)製作’且金屬層6〇可為銘、銀、金等金屬材質。然後藉由 黃光顯影製程’將金屬層60予以圖形化，並開孔露出部分基座40之區域 (見第4C圖）’接著’ 4參閱第4D圖’藉由乾式侧製雜刻出凹洞仙， t (InductiveIy coupled Plasma Reactive Ion Etching) 製程，接著並侧醜難程將金顧60去除。 如第4E圖所不’利用電錢製程，將凹洞4⑴填滿並於其上形成電鑛層 7〇 ;隨之利用精密研磨製程，研磨電錢層之上表面，直至露出基座4〇 (見第4F圖）。 著如第4G圖所不’在基座4〇上製作一層封裝環如，其製作方法 依材料性質而不同；當封裝環3G為金屬㈣時，譬如為銅、錫、金、銀、 銦及上述金屬之。金，可藉纟顧方式⑼咖）或級方^⑽叩喊 製作；當封裝環30為有機聚合物材質時，則可藉由旋塗（spring)的 方式製作；又或者當封裝環3G為氧化崎科，則可齡化學氣相沉積 (CVD)或熱氧化製程（知腿1 0xidatiQn)等陽極氧化接合技術（缝 bonding)^摘裝；並勤黃絲顯_製娜獅顧形化。 接者物振子私2G之職’鮮_ 5a〜沿圖，首先將振子單元 2〇透過轉與自域取敏轉電通孔％上 ，並透過高溫 供烤製程使導電凸塊23固化，而固定振子單元20於導電通孔5〇上’同時 完成電氣連結，如第5A圖所示。 201210097 將視纖 B圖進订基座40與上蓋10之對準與接合製程，同樣的， 舰…^ 3〇材質特性’分別以金屬融接結合、膠合技術或陽極氧化接合 ϋ成该封裝製程。接著利用精密研磨技術，將晶圓薄化並露出導電通 孔50:，上蓋1〇則視應用與尺寸規格來決定是否進行薄化製程（見第冗 )最後_金屬沉積製程、黃光顯影製程與電鍍製料，製作基座金 2焊墊4卜㈣5D _示；圖巾崎爾顆元件，因此需要予以切割 Η吏用。而上述薄化製程（見第5C圖），亦可於上蓋a、基座奶完成時 即進行’而無鱗繼合後方進行薄化。 另一方面，除了上述上表面電極21與下表面電極22位於振子單元2〇 之相對側外’亦可將其設計為位於相關。請參閱第6目，為本發明貫孔 式振子裝置«級雜結·二實_之示意圖；其情村上表面電極 21與下表面電極22位於振子單元2〇之相同側（見第7圖）。 相同地’上蓋1〇之凹槽11的設計，乃是為了容設振子單元20，故亦 可將基座40設計具有凹槽42，而上蓋1Q設計為平坦，也可達到相同之效 果’如第8A、犯圖所示，分別對應於上述第一實施例、第二實施例之變化 態樣，此時’封裝環3G之内緣則切齊於基座⑽之凹槽42的邊緣，同樣， 亦可作為形成基座4G之凹槽42的遮罩。而相對於製程上來說’凹槽u、 金屬層6G、以及電朗7G _形成於基座4G上，上蓋10 «結合封裝環 30即可。 請參閱第9、U)圖’為本發明貫孔式振子裝置晶圓級封裝結構第三實 施例之示意I上述實施例巾，祕％設計錄貫穿於概略在振子單 元2〇之導電凸塊23的下方；而本實_巾’料物⑽設計垂直貫穿 9 201210097 於封裝環3〇下方，_通孔％乃是藉由轉通孔技術來軸，而砂導 通孔為影響議目此，柳謝，㈣線的方式 將導電通孔5〇 於封裝環3G之下方，射進行封裝製辦，影響封裝 氣密性之因素’僅剩下封裝環3G接合的好壞，_封裝氣體不會經由石夕導 通孔走線而與外界產生交換。因此，整體域結構的氣雜將更容易獲得 控制。當然、’凹槽U的變化、上表面電極21與下表面電極22的相對位置 亦可如上述實_、態樣般予以變化（圖中未示）。 本發明所揭露之貫孔式振子裝置晶圓級封裝結構之製造方法，藉由垂 直貫穿開設於基座的導電觀，來使振子單元與底部的基座金屬焊娜成 電性連接’ ，跳脫目前__基座封裝的箸境（包括產品成本高且 貨源不歡等），並改善三明治難結構所導致之誠力問題；同時，減少 貴金屬材料祕與進-步微縮尺寸，減少連接線之長度，從而降低因高頻 化而衍生的寄生電容/域效應。且藉由晶嶋合技術可批次生產石英晶體 振子’減少人力與生產時間，降低生產成本。同時，封裝環之外緣與上蓋、 基座切齊，而構成完麵溝·平面，以齡污雜的封裝環之内 緣與上蓋之凹槽的邊緣切齊，可增加了封裝環的面積，提高接合強度與密 封效果。且封裝環可作為後續侧製程之遮罩，將可大幅簡化製程。 雖然本個以前述之實施例揭露如上，然其並咖錄定本發明。在 不雌本㈣之精神和範之更動_飾，均屬本㈣之專利保 護範圍。關於本發賴界定之保護顧請參考_之中請專利範圍。 【圖式簡單說明】 第1圖為本發明貫孔式振子裝置晶圓級封裝結構之製造方法的第—實施例 201210097 之示意圖。 第2圖為本發明貫孔式振子裝置晶圓級封裝結構之製造方法的第一實施例 令振子單元上、下電極之示意圖。 第3A〜3E圖為本發明貫孔式振子裝置晶圓級封裝結構第—實施例之上蓋的 製作流程示意圖。 第4A〜4G圆為本發明貫孔式振子裝置晶圓級封裝結構第—實施例之基座的 製作流程示意圖。 鲁第5A〜5D圖為本發明貫孔式振子裝置晶_封裝結構第—實關之組裝的 製作流程示意圖。 第6圖為本發明貫孔式振子裝置晶圓級封裝結構之製造方法的第二實施例 之不意圖。 第7圖為本發明貫孔式振子裝置關級封裝結構之製造方法的第二實施例 中振子單元上、下電極之示意圖。 第8A ®為本發明貫孔式振子裝S晶圓級封裝結構之製造方法的第一實施 _例中凹槽之變化實施態樣示意圖。 第SB圖為本發明貫孔式振子裝置晶圓級封裝結構之製造方法的第二實施 例中凹槽之變化實施態樣示意圖。 第9圖為本發明貫孔式振子錢晶ϋ級躲結構之製造方_第三實施例 之不意圖。 第10圖為本發明貫孔式振子裝置晶圓級封裝結構之製造方法的第三實施例 中振子單it上、下電極與封裝環走線之示意圖。 【主要元件符號說明】 201210097 10 上蓋 11 凹槽 20 振子單元 21 上表面電極 22 下表面電極 23 . 導電凸塊 30 封裝環 301 封裝環層 40 基座 401 凹洞 41 基座金屬焊墊 42 凹槽 50 導電通孔 60 金屬層 70 電鍍層Plasma Reactive Ion Etching) process. Please refer to FIG. 4A to FIG. 4G, which are schematic diagrams showing the fabrication process of the pedestal of the first embodiment of the wafer-level package structure of the through-hole vibrator device according to the present invention. First, a susceptor 4〇 is provided (see Figure 4A), and then a metal layer 60 is formed on the pedestal* (see Figure 4B), which can be fabricated by means of a sputter or a vaporization method (Evaporator). ) Production 'and metal layer 6 〇 can be metal materials such as Ming, silver, gold. The metal layer 60 is then patterned by a yellow light development process and the openings are exposed to expose portions of the pedestal 40 (see Figure 4C). 'Next' 4 see Fig. 4D' by dry side swarf InductiveIy coupled Plasma Reactive Ion Etching process, and then remove the Jin Gu 60. As shown in Fig. 4E, the recess 4 (1) is filled and the electric ore layer 7 is formed thereon by the electric money process; the surface of the electric money layer is polished by a precision grinding process until the base 4 is exposed. (See Figure 4F). As shown in Fig. 4G, a layer of package ring is formed on the pedestal 4, for example, depending on the nature of the material; when the package ring 3G is metal (four), such as copper, tin, gold, silver, indium and The above metal. Gold can be made by means of care (9) coffee or level ^ (10); when the encapsulation ring 30 is made of organic polymer, it can be made by spring coating; or when the encapsulation ring 3G is Niobium Oxide, an age-bearing chemical vapor deposition (CVD) or thermal oxidation process (known leg 1 0xidatiQn) and other anodizing bonding technology (seam bonding) ^ offloading; and diligent yellow silk display _ system Na Lion Gu shape. Receiver vibrator 2G job 'fresh_5a~ along the map, first vibrator unit 2〇 through the transfer and self-domain sensitization to the through hole %, and through the high temperature for the baking process to make the conductive bump 23 solidified, and fixed The vibrator unit 20 is electrically connected at the same time as the conductive via 5', as shown in FIG. 5A. 201210097 Aligning and aligning the base 40 and the upper cover 10 with the view of the fiber B. Similarly, the material characteristics of the ship are respectively metal-bonded, glued or anodized to form the package process. . Then, using the precision grinding technology, the wafer is thinned and the conductive via 50 is exposed: the upper cover 1 视 depends on the application and the size specification to determine whether to perform the thinning process (see the redundancy). Finally, the metal deposition process and the yellow light development process With the electroplating material, the pedestal gold 2 solder pad 4 is made (4) 5D _ shows; the figure is a chip element, so it needs to be cut and used. The thinning process (see Fig. 5C) can also be performed after the upper cover a and the base milk are completed, and the thinning is performed after the scale is not finished. On the other hand, in addition to the above-mentioned upper surface electrode 21 and lower surface electrode 22 being located on opposite sides of the vibrator unit 2', it may be designed to be related. Please refer to the sixth item, which is a schematic diagram of the through-hole vibrator device of the present invention, which is located on the same side of the vibrator unit 2 (see Fig. 7). . Similarly, the groove 11 of the upper cover 1 is designed to accommodate the vibrator unit 20, so that the base 40 can also be designed with a recess 42 and the upper cover 1Q is designed to be flat, and the same effect can be achieved. 8A and the corresponding diagrams respectively correspond to the variations of the first embodiment and the second embodiment described above, in which case the inner edge of the package ring 3G is aligned with the edge of the recess 42 of the base (10). It can also serve as a mask for forming the recess 42 of the pedestal 4G. The groove 10, the metal layer 6G, and the galvanic 7G_ are formed on the susceptor 4G with respect to the process, and the upper cover 10 is bonded to the package ring 30. Please refer to FIG. 9, U) FIG. 3 is a schematic diagram of a third embodiment of a wafer-level package structure of a through-hole type vibrator device according to the present invention. The above-mentioned embodiment is described in the above, and the design is recorded through the conductive bumps in the vibrator unit 2〇. Below the 23; the actual _ towel 'material (10) is designed to run vertically through 9 201210097 under the package ring 3〇, _ through hole % is through the through hole technology to the axis, and the sand through hole is the impact of this, Liu Xie, (four) line way, the conductive via 5 is placed under the package ring 3G, and the package is fabricated, which affects the airtightness of the package. 'There is only the joint of the package ring 3G, _ the package gas will not Exchange with the outside world through the Shixi through-hole routing. Therefore, the gas of the overall domain structure will be more easily controlled. Of course, the change of the groove U and the relative position of the upper surface electrode 21 and the lower surface electrode 22 can also be changed as shown in the above (not shown). The manufacturing method of the wafer-level package structure of the through-hole vibrator device disclosed in the present invention is to electrically connect the vibrator unit to the bottom base metal by vertically penetrating the conductive view opened on the base. Take away the current __ pedestal packaging environment (including high product cost and unpleasant supply), and improve the problem of the integrity caused by the difficult structure of the sandwich; at the same time, reduce the precious metal material and the step-by-step miniaturization, reduce the connection line The length, thereby reducing the parasitic capacitance/domain effect derived from high frequency. And the quartz crystal vibrator can be batch-produced by the crystal bonding technology, which reduces manpower and production time and reduces production costs. At the same time, the outer edge of the encapsulation ring is aligned with the upper cover and the base, and the groove and the plane are formed. The inner edge of the encapsulating ring of the aged is aligned with the edge of the groove of the upper cover, thereby increasing the area of the encapsulation ring. Improve joint strength and sealing effect. And the package ring can be used as a mask for the subsequent side process, which will greatly simplify the process. Although the present invention has been disclosed above in the foregoing embodiments, the present invention is also described. The spirit of the non-female (4) and the change of the fan are all covered by the patent protection of this (4). For the protection of the definition of this issue, please refer to the scope of the patent. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a first embodiment of a method for manufacturing a wafer-level package structure of a through-hole type vibrator device of the present invention 201210097. Fig. 2 is a view showing the first embodiment of the manufacturing method of the wafer level package structure of the through-hole type vibrator device of the present invention. 3A to 3E are schematic views showing the manufacturing process of the upper cover of the wafer-level package structure of the through-hole type vibrator device of the present invention. 4A to 4G are schematic diagrams showing the manufacturing process of the susceptor of the wafer-level package structure of the through-hole type vibrator device of the present invention. Lu Lu 5A~5D is a schematic diagram of the manufacturing process of the assembly of the crystal-package structure of the through-hole vibrator device. Fig. 6 is a schematic view showing a second embodiment of a method of manufacturing a wafer level package structure of a through-hole type resonator device according to the present invention. Figure 7 is a schematic view showing the upper and lower electrodes of the vibrator unit in the second embodiment of the manufacturing method of the through-hole package structure of the through-hole type vibrator device of the present invention. 8A ® is a first embodiment of the manufacturing method of the S-stack-level package structure of the through-hole type vibrator according to the present invention. Fig. SB is a schematic view showing a variation of the groove in the second embodiment of the method for manufacturing the wafer level package structure of the through-hole type vibrator device of the present invention. Fig. 9 is a schematic view showing the manufacture of the through-hole type vibrator of the present invention. FIG. 10 is a schematic view showing the third embodiment of the manufacturing method of the wafer level package structure of the through-hole type vibrator device of the present invention in which the upper and lower electrodes of the vibrator are connected to the package ring. [Main component symbol description] 201210097 10 Upper cover 11 Groove 20 Vibrator unit 21 Upper surface electrode 22 Lower surface electrode 23. Conductive bump 30 Package ring 301 Package ring layer 40 Base 401 Cavity 41 Base metal pad 42 Groove 50 conductive vias 60 metal layer 70 plating