201201267 六、發明說明： 【發明所屬之技術領域】 本發明，係關於將於具有電路圖案之晶圓之面依序積 層接著層與保護膜而成之附有接著膜之晶圓切割之晶圓之 切割方法、連接方法及連接構造體。 本申*月係以於曰本2010年6月2日申請之日本專利申 請號2010— 126919為基礎主張優先權者，藉由參照該申請 而援用於本申請案。 【先前技術】 半導體領域中，在將IC(Ictegrated Circuit)構裝於基板 上之It形，需有固定IC之材料。此材料，一般係膜狀或糊 狀之樹脂劑（例如接著劑' 密封劑），最終充填於1C與基板 之間將之固化，而固定Ic與基板。 、狀之材料、例如黏晶膜、Acf(Anis〇tropic Conductive ’異方 |·生導電膜）、NCF(Non Particle Conductive Film, 無u粒導電膜）等’需配合ic尺寸切割來使用。201201267 VI. Description of the Invention: [Technical Field] The present invention relates to a wafer with a film attached to a wafer which is formed by sequentially laminating an adhesive layer and a protective film on a surface of a wafer having a circuit pattern. Cutting method, connecting method and connecting structure. This application is based on the Japanese Patent Application No. 2010-126919 filed on Jun. 2, 2010, the entire disclosure of which is hereby incorporated by reference. [Prior Art] In the field of semiconductors, in the It shape in which an IC (Ictegrated Circuit) is mounted on a substrate, a material for fixing an IC is required. This material, which is generally a film-like or paste-like resin (e.g., an adhesive 'sealant), is finally filled between 1C and the substrate to cure, and Ic and the substrate are fixed. A material such as a mucto film, an Acf (Anis 〇 Conduct Conduct Conduct · · 、 、 、 、 、 、 、 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。
又’與於基板之電極上塗布接著層（例如NCF)並將1C 倒裝晶片接么^ t、土 4 ^ 〇之方法相較，由於生產上之優點多，因此晶 圓切割方法被建議。 作為—般之晶圓切割方法，已知有於晶圓表面（描繪有 電路之功能面）貼附接著層，於晶圓之背面側設置黏晶膜， 並攸接著層側插入切削切刀而從晶圓單片化成ic之方法。 (參^例如專利文獻1及專利文獻2)。藉由使用此方法，可 201201267 得到於ic之功能面側（突塊）配置有接著層之IC β 以往’係以晶圓之表面朝上’於切割帶設置附有接著 層之晶圓’從晶圓表面插入切削切刀，進行切割。此係為 了以拍攝機讀取晶圆表面之電路圖案並進行切割時之對 準。 晶圓之切割工法中有「雷射（Dry)」或「電漿（Dry)」' 切刀（Wet)」。此等工法中以Dry環境（乾燥之環境）進行 之雷射或電漿之工法對加工中之污染係有利的。然而，用 於此等雷射或電漿之工法之裝置並非—般，裝置成本亦係 切刀之三倍以上。因此，「切刀（Wet)」為最一般之工法。 以通*之切刀切割切割貼附有ACF或NCF之晶圓時， 被擔心之事項為污染。此係因ACF或NCF位於晶圓之功能 面側，因此有異物之污染時，在壓接時有可能產生IC之功 能面之破損、短路之產生之類不良情形。為了避免此可能 性，在對ACF或NCF表面使用保護膜時，有切割加工時會 剝離之加工性之問題。又，由於保護膜亦與IC 一起被分割 (單片化）’因此在使保護膜剝離之步驟中，有難以使保護膜 剝離，保護膜之剝離殘留產生之剝離性問題。 [專利文獻] [專利文獻1]日本特開2009_ 135348號公報 [專利文獻2]曰本特開2〇〇8_ 141 135號公報 【發明内容】 本發明係有鑑於上述習知之實情而提出者，其目的在 4 201201267 於，提供能使在加nj後之保護以 之切割方法、連接方法及連接構造體。 “子之晶圓 本發明之晶圓之切割方法，其具 於-面具有電路圖案之晶圓之該一面依序J步驟係將 護膜而成之附有接著膜之晶圓之該保護膜之^著層與保 帶；拍攝步驟，係從前述附有接著膜之 附於切割 攝該附有接著膜之晶圓中之前述晶圓 面側拍 位置決定步驟，根據在前述拍攝步驟拍攝之影‘像二： 割前述附有接著膜之晶圓之位置；切 H ’ ；、疋分 在…割位置決定步驟決定之位置，於前述附有接著膜 之晶®，形成從該附有接著膜之日日日圓之另—面側至柱 著層及前述保護膜所接觸之面與該保護膜及前述^帶所 接觸之面之間為止之切削槽，以形成複數個附有接著膜之 晶片’該晶片具備在於一面具有前述電路圖案之晶片之访 =積層有前述接著層之附有接著層之晶片、以及前述： 遵膜；以及拾取步驟，從前述附有接著膜之 附有接著層之晶片。 取月j述 本發明之連接方法，具有壓接步驟，係將以上述之曰 圓之切割方法拾取之附有接著層之晶片透過接著層壓接= ”有電極之電路基才反’以連接該電極與該附有接居曰 u l ® 曰曰 片之電路圖案。 本發明之連接構造體，係藉由上述連接方法而製得。 根據本發明，由於係切削晶圓及接著層，且保護膜以 未被分割之狀態殘留，因此能使在加工晶圓後之保護膜之 201201267 剝離性良好。 實施方式 以下，參照圖式依照以下順序磧 外。兒明適用本發明之晶圓 例 之切割方法'連接方法及連接構造體之具體實施形態之一 1. 晶圓之切割方法 1 -1.貼附步驟 1 - 2.拍攝步驟 1-2-1.切割裝置 1 - 2 - 2.拍攝方法 1-3.分割位置決定步驟 1-4·切削槽形成步驟 1-5.拾取步驟 2. 連接方法及連接構造體 2 -1 ·壓接步驟 3. 其他實施形態 4. 實施例 < 1.晶圓之切割方法> 如圖1所示，本實施形態之晶圓之切割方法，具有貼 附步驟S 1、拍攝步驟S2、分割位置決定步驟S3、切削槽形 成步驟S 4、拾取步驟s 5 β < 1 -1 ·貼附步驟〉 如圖2、圖3所示，貼附步驟S1中，係將於一面具有 6 201201267 電路圖案即突塊16之曰 「功能面1〇a」）依序藉日廢之—面（表面）10a(以下亦稱為 24 ., 積層接耆層22與具有透射性之伴 24而成之附有接著膜 々保4臈 1 s , 、日日圓39之另一面39b貼附於切宝丨 以。例如，在貼附步 ㈣切割帶 少鄉S1中係進行如下之處理。 首先’如圖2所示，將所 心 將所準備之晶圓10固定於治且；1 作為晶圓10，能舉/、12。 圓1n + 匕牛出例如矽晶圓等半導體晶圓。於曰 圓1〇之一面10a形成有格 '阳 处工！ Λ 千狀之劃線14。於晶圓1 〇之功 月匕面l〇a形成有電路圖案即突塊16。 力 ，’。具12具備例如具有較晶圓10直徑大之直徑之严 或框狀之框架20與-面具有接著性之切割帶18。& 竿：之：8係例如貼附於框架20之-面側，展開於框 ‘20之内側。晶® 10例如貼附於治具12之中央部。又： 曰曰圓1 0之功此面丨〇a之另一面i 〇b貼附於切割帶1 8。作 切割帶18，係使用例如會因與射紫外線而剝離力變小之黏 著膜。藉此’在將晶圓10分割成複數個晶片21後，夢由 對切割帶18照射紫外線’在拾取各個晶片2"夺能從㈣ 帶18容易地分離晶片21。 接著’如圖3所示，於晶圓！ 〇夕从 仏日日圓ιυ之功旎面10a配置積層 保遵膜24與接著層22而構成之接著膜26。 接著層22包含例如膜形成樹脂、液狀硬化成分及硬化 劑。又，接著層22,亦可包含例如各種橡膠成分、柔軟劑、 各種填料類等添加劑或導電性粒子。接著層22 。, 一丁係 NCF(Non Particle Conductive Film，無微粒導電膜）或 ACF(Anisotropic Conductive Film,異方性導雷摇、 . τ电联）、或積層 201201267 有該等者。 作為膜形成樹脂能例示苯氧基樹脂、聚酷樹脂、聚醯 胺樹脂、聚醯亞胺樹脂。膜形成樹脂，從材料之取得容易 性及連接可靠性之觀點來看，最好係包含苯氧基樹脂。作 為液狀硬化成分，能例示液狀環氧樹脂、丙稀酸。液狀硬 化成分，從連接可靠性及硬化物穩定性之觀點來看，最好 ::!久以上之官能基。作為硬化劑’在液狀硬化成分為 %乳樹脂之情形，能例示㈣、胺類H t 2:。液狀硬化成分為丙稀酸之情形，能例示有機過氧化 物作為硬化劑。 接著層22之厚度最好係突塊16之高度以上 亦即，接著層22之厚度最好係能覆蓋突塊16之厚度。又 削片Γ董膜24係在使用切割裝置等分割晶圓10時防止切 “專附著於接著層22。作為保護膜 骐 '聚對芏-田缺， 此举出例如聚酯 謂本—曱酸乙二g旨膜等 紙之紙類等。 質紙、玻璃 保護膜24之厚度最好係25〜刚 膜24之厚度未 心之靶圍。在保護 早又未滿25々m時，會有使用切 1 0之步驟途中伴1 M , 裝置荨分割晶圓 濩膜24從接著層22剝離之情飛^ 膜24之厚度為25…上之情形相較 广與保護 膜24之厚度超過100_，則於保護膜Μ上較差。若保護 以製造接著膜26時， ' 、 塗布接著層22 伴1 ；呆護膜24上會難以塗布接著| ” 保蠖骐24與接荃思n 快考層22。 〜上。此：間之剝離力最好為。·1〜 此處，所謂保護膜24與接著 ·Ν 2之間之剝離 201201267 :糸根據例如JISZ0237顯示於180度方向”形剝離之時 :剝離力。保護膜24與接著層22之間之剝離力未滿〇 in /cm時，會有使用切割裝置等分割晶圓ι〇之步驟、亦即於 切削槽形成步驟84途中後述之附有接著膜之晶片Μ從保 與㈣膜24與接著層22之間之剝離 力係0.1N/Cm以上之情形相較加工性較差。又，在保護膜 24與接著層22之間之剝離力超過3 〇N/cin時，會有在拾 取步驟S5保護膜24僅一部分剝離而殘留，剝離：並非： 好。再者，保護膜24與接著層22之間之剝離力為〇·3〜〇·6ν / Cm，則又更佳。藉此，能使在切削槽形成步驟S4之加工 性及在拾取步驟S 5之剝離性更良好。 保護膜24與接著層22之間之剝離力能藉由對保護膜 24表面施以離模處理來調整。離模處理，例如能藉由將矽 系之剥離劑塗布於保護膜24表面後，加熱保護膜24而使 保遵膜24乾燥來實施。 保護膜24與接著層22之間之剝離力亦可較依據圖2 說明之於治具12接著晶圓10之階段中晶圓10與切割帶18 之剝離力小。藉此，如於後詳述，能於拾取步驟中使加 工晶圓1 0後之保護膜24之剝離性良好。 其次，例如圖3所示’使用按壓裝置28將接著膜％ 貼附於晶圓1 〇。 、） 按壓裝置28具備例如載台30與壓接頭32。載台3〇載 置例如晶圓10。又，晶圓1〇係在被治具12保持之狀態下 載置於載台30。又，載台3〇具有例如加熱裝置34。此外， 201201267 在將接著膜26貼附於晶圓1 〇之階段中 裝置34。 亦可不使用加熱 壓接頭32例如圖3所示具有按壓構件％與保持按壓 構件36之保持部38。壓接頭32係將按壓構件％往載台 3〇側按壓。按壓構件36以例如彈性體構成。能使用石夕橡膠 專之彈性體⑷astomer)。！！此，與金屬製之按壓構件相較， 月&將接著膜26均一地貼附於晶圓丨〇。 接著’按壓裝置28係、將於表面配置有接著膜％之晶 10夾於載台30與壓接頭32之間按壓。亦即，以保 :接頭32之按壓構件36將接著膜26按壓於晶圓之功 月匕面。藉此，能將接著膜26貼附於晶圓1 〇。 其次，如圖4所示，將上述之附有接著膜之晶圓π之 保護膜之面貼附於切割帶。 ^-2.拍攝步驟> 曰拍攝步驟S2,拍攝步驟’係從圖5所示之附有接著膜 ^曰曰圓39之另一面39b側拍攝附有接著犋之晶ID 39中之 晶圓1〇之一面、亦即晶圓之功能面10a之影像。 "^-^切割裝置〉 拍攝步驟S2’係使用例如圖5所示之切割裝置4〇。切 裝置如，具備夹頭平台42、對準載台44、拍攝部I 切削部48、以及控制部52。 夾員平° 42係藉由例如未圖示之減壓裝置吸引治具 ，並將治具12固定於夾頭平台42上。 對準載台44係根據例如控制部52之指示使夾頭平台 10 201201267 42移動於χ方向及y方向。 拍攝部46具有例如以紅外線拍攝機構成、接收在晶圆 表面亦即在晶圓1 〇之功能面】〇a反射之光之光學系 統、拍攝光學系統所捕捉之像之拍攝元件。拍攝部46例如 藉’、、、射從附有接著膜之晶圓39之另一面39b側透射至附 有接著膜之晶圓39内部之光並接收在晶圓iG之功能面心 之反射光，拍攝晶目10之功能面1〇a之影像。拍攝部46 係將所拍攝之景》像之資訊發送至控制部5 2。 切削部48係根據控制部52之指示，切削晶圓1〇。切 削具有例如切削晶圓1〇之切刀5〇。切削部化係將旋 轉之切刀50按壓於晶圓10以切削晶圓10。 驅動部56係從控制部52之影像處理部54接收盘分則 晶圓1〇之位置相關之資訊。驅動部56係根據與分割晶圓 1〇之位置相關之資訊，驅動對準載台44及切肖"H8。藉 此，切割裝置40能將晶圓10分割（單片化；）。 ^-2-2.拍攝方法〉 拍攝步驟S2 ’係為了從晶圓1G之功能面iQa 14之位置，而抽攝— J ^ 而拍攝附有接者膜之晶圓39之晶圓1〇之 面心之影像。作為具體方法，係使用例如上述切割裝^ 40進行其次處理。 首先，拍攝部46藉由照射從附有接著膜之晶圓Μ之 另-面39b側透射至附有接著膜之晶圓39内部 在晶圓;〇之功能…反射光，拍攝晶…= 心之影像。其次’拍攝部46係將所拍攝之影像之資訊發 11 201201267 送至控制部5 2。其次，切室•丨肚里」Λ 切割裝置40之影像處理部54接你 拍攝部46所拍攝之影像之資訊。 <1-3.分割位置決定步驟> 分割位置決^步驟S3,係根據在拍攝步驟S2拍攝之男 像決定分割附有接著膜之晶圓3 9之仿罟.,, ^ 〈日日圓39之位置。例如，分 決定步驟S3係如圖6所干，汁+T7 w壯职 所不上述切割裝置40之影像處理 從晶® 1〇之功能面1〇a之影像辨識劃、線14 ， 決定沿劃線14分割晶圓1〇之位置。 < 1 -4.切削槽形成步驟> 切削槽形成步驟84，係例如圖7所示，根據 置決定步驟S3決定之位置，於时接㈣之晶圓Μ，二成 ，附有接者膜之晶目39之另—面现側至接著層U及保 護膜24所接觸之面與保護冑％及㈣帶μ所接觸之面之 間為止之切削槽62。藉此，在切削槽形成步驟Μ中 具備附有接著層之晶片64與保護膜24之複數個附有接著 膜之晶片60。此種切削槽形成步驟S4中，藉由切宝,丨裝置 4〇形成複數個附有接著膜之晶片6〇時，能防止從接著層 22晶片21偏移或脫落。 例如’切削槽形成步驟S4，係使用上述圖5所示之切 割裝置40進行以下之處理。 首先，在影像處理部54決定沿劃線u將晶圓1〇於X 方向分割時，驅動部56係驅動對準載台44，使夾頭平台 42移動而使劃線14之一端位於切刀5〇之下方。 〇 其次’驅動部56驅動切削部48 ’在使切刀5〇已旋轉 12 201201267 使切刀50壓接於晶圆 之狀態下使切削部48移動至下方 10 〇 其次’驅動部56驅動對準載台44，使晶圓ig移 X方向。 、 藉此，切削槽形成步驟S4中，能沿劃線14於乂方洽 分割晶圓H)’形成具備附有接著層之晶片64與保護膜: 之複數個附有接著膜之晶片⑼。又，在切削槽形成步驟S4 中，係在於晶圓10表面貼附有保護膜24及接著I 22之 態下分割晶圓1〇,藉此能防止於接著層22表面附著切削層： < 1 - 5.拾取步驟> 拾取步驟S5,從时接著膜之晶片6()拾取（剝離） 接著層之晶片64。 例如，拾取步驟S5中’係如圖7所示，藉由將圖了所 不狀態之附有接著膜之晶片60往圖8之箭頭方向拉展，從 附有接著膜之晶片6G之接著層22與保護膜24所㈣^ :離附有接著層之晶片64。藉此，從複數個附有接著層之 晶片64之各個拾取附有接著層之晶片64。 窃 如以上所說明，本實施形態之晶圓之切割方法，係於 附有接著膜之晶圓39,形成從附有接著膜之晶圓39之另二 面39b側至接著層22及保護膜24所接觸之面與保護膜μ 及切割帶18所接觸之面之間為止之切削槽62。藉此，本實 施形態之晶圓之七刀割方法’由於能在接著I 22表面被保護 膜24覆蓋之狀態下製造附有接著膜之晶片6〇，因此防止於 接者層22表面附著切削屑。因此，本實施形態之晶圓之切 13 201201267 割方法，能防止在分割晶圓1 0時之異物之污染。 又，本實施形態之晶圓之切割方法，由於切削晶圓10 及接著層22，且在保護膜24未完全被分割之狀態殘留，並 保濩膜24與接著層22之間之剝離力較晶圓丨〇與切割帶i 8 彔J離力小，因此能使加工晶圓1 〇後之保護膜24之剥離 性良好。 再者’本實施形態之晶圓之切割方法，由於拾取附有 接著層之晶片64時保護膜24未被單片化，且保護膜24與 接著層22之間之剝離力較晶圓1 〇與切割帶1 8之剝離力 小’因此能防止保護膜24僅一部分剝離殘留。 亦即’本實施形態之晶圓之製造方法，在切削晶圓1〇 及接著層22後保護膜24係以未被單片化之狀態殘留，而 月b使加工晶圆1 〇後之保護膜24之剝離性良好。 <2.連接方法及連接構造體> 如圖9所示，本實施形態之連接方法，具有貼附步驟 S 1、拍攝步驟S2、分割位置決定步驟S3、切削槽形成步驟 S4、拾取步驟S5、壓接步驟S6 »此外，貼附步驟S 1〜拾取 步驟S5，由於與上述圖1所示之處理相同，因此省略其詳 細說明。 <2-1.壓接步驟> 壓接步驟S6中，係將在拾取步驟S5拾取之附有接著 層之晶片64透過接著層22壓接於具有電極72之電路基板 7〇 ’以連接電極72與附有接著層之晶片64之突塊16。 例如’壓接步驟S6中，係使用如圖10所示之按壓裝 14 201201267 置28進行下述處理。 首先’於電路基板70上暫搭載複數個附有接 w 曰曰 片64。亦即，將已確認保護膜24已剝離之附有接著層之曰曰 片64配置於電路基板70表面之既定位置。附有接著声之 晶片64與電路基板70，係被對齊成在按壓兩者時附有接著 層之晶片64之突塊16與電路基板70之電極72會電氣連 接。 接著，將配置有附有接著層之晶片64之電路基板7〇 載置於按壓裝置28之載台30上。 其次，以保持於壓接頭32之按壓構件36將附有接著 層之晶片64按壓於電路基板70之表面。例如，可舉出藉 由被稱為EBS(Elasticity Bonding System，彈性接合系統） 工法之將電路基板整體在以彈性體覆蓋之狀態按壓之方 法，將複數個於同一基板上暫配置之晶片一次壓接之方 法。EBS工法中，係使用由彈性體構成之壓接構件，其於 壓接頭本體之與電路基板70對向之部分設有凹部。亦即， EBS工法中，係藉由熱壓接頭（具有由覆蓋印刷基板整體之 彈性體構成）按壓複數個附有接著層之晶片64，將附有接著 層之晶片64 —次壓接。藉此，能將附有接著層之晶片M 透過接著層22 —次構裝於電路基板7〇表面。 如上述，本實施形態之連接方法，係如圖丨所示，能 製造透過接著層22而連接附有接著層之晶片64之突塊16 與電路基板70之電極72之連接構造體8〇 <3.其他實施形態> 15 201201267 上述晶圓之切割方法中，為了使晶圓ίο之厚度較薄， 而了可如圖12所示於貼附步驟S1前進-步將附有接著膜 之晶圓39之另—面现研削至既定厚度之研削步驟S0。 此種研削能藉由例如研磨裝置等進行。 曰上述分割位置決定步驟S3中，影像處理部54亦可從 晶圓1〇之功能面之影像辨識突塊16或對準標記之位置， 以辨識劃線14之位置。 又，上述按壓構件36亦可係彈性體。藉此，即使係在 將複數個附有接著層之晶片64同時按麼於電路基板7〇、之 表面之情形，亦能良好地連接附有接著層之晶片Μ與電路 基板7 0。 又，上述實施形態中，係說明了於按壓構件％使用彈 性體（elastomer)，將複數個附有接著層之晶片64 一次構裝 :電路基板70之情形。然而’於電路基板7〇構裝附有接 著層之晶片64之方法並不限定於此。例如，亦可不使用彈 性體(e—0,來將附有接著層之晶片64構裝於電路基 板70。又，亦可將複數個附有接著層之晶片64逐一構裝於 電路基板70。 ' “又，上述實施形‘態巾，係說明了使用按壓裝置28將接 著臈26貼附於晶B] 10之情形 '然❿，將接著冑％貼附於 晶圓10之方法並不限定於此。例如，亦可使用滚子積層機 8將接著膜26貼附於晶圓1 〇。 又’按壓構件36並非僅限定於上述EBS，並非妨礙一 般之熱壓接壓接頭（陶究或金屬等硬質壓接頭）或超音波壓 16 201201267 接頭之使用。 例如’亦可如圖13所示將附有接著層之晶片64接著 於電路基板70。圖13 φ .. ^ t 中’係對與圖1至圖12相同或類似 之部分賦予與圖1至圖 至圖1 2相同之參照符號，省略重複之發 明。 匕裝置82 ’係藉由倒裝晶片接合將電路基板與晶 片21電孔連接。按壓裝置^具備載台μ與陶免工具％。 按壓裝置82及蓣a 八„ ϋ 刀別具有與按壓裝置28及載台30 相同之構成。 陶竟工具86係將附有接+ β ^ ^ 7々接者層之晶片64對電路基板70 按壓。陶究工具86亦可將滿輕柄 』』將複數個附有接著層之晶片64逐 —對電路基板7〇按壓。陶资 £具86亦可包含碳化矽、氮 化夕、氮化鋁等陶瓷。陶究 瓦工具86亦可係壓接頭之一例。 陶瓷工具86亦可具有加埶 ^ ^ ™ cc …、£ 具86之加熱裝置88。加 熱裝置88亦可係陶瓷加熱器。 ，又，從附有接著膜之晶片6〇剥離附有接著層之 後，切割裝置40之拍攝部46亦 *4 lL 拍攝日日圓1 〇表面之影像〇 藉此，影像處理部54能處理 ' 有接著声之…… 曰曰囫10表面之影像，確認附 负按者層之日日片64是否從附有接 者臈之日日片60剥離。 例如，亦可由從附有接著膜之晶片60分離出各個 附有接著層之晶片64之拾取裝置確認附有接著；二出各個 是否從附有接著膜之晶片6〇剝離。 《之曰a片64 又，例如，在從附有接著臈之a 接著層之曰Η ή 日日片60为離出各個附有 按者層之a日片64之拾取裝置，私 负 拾取附有接著層之晶片64 17 201201267 之情形，在未從附有接著膜之晶片60之保護膜24剝離附 有接著層之晶片64時，與從保護膜24已剝離附有接著層 之晶片64時比較，係在拾取裝置之前端與切割帶18之距 離更遠的地點拾取裝置與附有接著層之晶片64彼此接觸。 因此，亦可根據拾取裝置所檢測之壓力變化，確認附有接 著層之晶片64是否已從附有接著膜之晶片6〇之保護膜24 剝離。 [實施例] 以下說明本發明之具體實施例。此外，本發明之範圍 並不限定於下述任一實施例。 <接著膜之製作> 作為接著層之-例係使用NCFe於各接著膜之保護膜 係使用與離模處理方法厚度相異之聚對苯二甲酸乙二醋膜 (以下稱為「PET膜」）。 <使用黏結劑α之接著膜> 使用塗布棒於各保護膜上塗布接著層。將塗布有接著 層之H膜置X 8G c之烤爐’使溶媒揮發使接著層乾燥， 藉此製作依序積層接著層即NCF與㈣膜即PM膜而 之接著膜。 卜接著膜中，接著層與保護膜之剝離力，係於保 :膜上塗布接著層前藉由對保護臈表面施以離模處理來調 :離核處理’係藉由在將石夕系之剝離劑塗布於保護膜表 加熱保護膜並使保護膜乾燥來實施。藉由調整石夕系 之剝離劑之組合，製作接著層與保護膜之剝離力相異之表、！ 18 201201267 所示之實施例1〜實施例11及表2所示之比較例1〜比較 例5之接著膜。 [表1] 切割 開始面 保護膜之 厚度 Om) 剝離力 (N/cm) 保護膜之 半切割 加工性 剝離性 連接 可靠性 實施例1 背面 50 0.170 有 Δ 〇 〇 實施例2 背面 50 0.300 有 〇 ◎ 〇 實施例3 背面 50 0.520 有 〇 ◎ 〇 實施例4 背面 50 0.720 有 〇 〇 〇 實施例5 背面 50 1.000 有 〇 〇 〇 實施例6 背面 50 0.100 有 X Δ Δ 實施例7 背面 50 1.870 有 〇 Δ Δ 實施例8 背面 25 0.300 有 〇 〇 〇 實施例9 背面 38 0.300 有 〇 ◎ 〇 實施例10 背面 75 0.300 有 〇 ◎ 〇 實施例11 背面 100 0.300 有 〇 〇 〇 [表2] 切割 開始面 保護膜之 厚度 剝離力 (N/cm) 保護膜之 半切割 加工性 剝離性 連接 可靠性 比較例1 表面 100 0.300 有 〇 X 剝離殘留 Δ 比較例2 表面 50 0.300 有 〇 X 剝離殘留 Δ 比較例3 背面 100 0.300 無 〇 X X 比較例4 背面 無 X (對 DG-Tape 轉附） X 比較例5 表面 無 - - - / Δ <關於保護膜之厚度> 表 1及表 2所示之保護膜之厚度係使用測微器 (Mitutoyo股份有限公司製）測定。 <保護膜對接著膜之剝離力> 19 201201267 表！及表2所示之保護膜對接著膜之剝離力Further, in comparison with the method of applying an adhesive layer (for example, NCF) to the electrode of the substrate and connecting the 1C flip chip to the substrate, the crystal cutting method is recommended because of the many advantages in production. As a general wafer cutting method, it is known that a bonding layer is attached to a surface of a wafer (a functional surface on which a circuit is drawn), a die-bonding film is provided on the back side of the wafer, and a cutting blade is inserted on the layer side. A method of singulating from a wafer into an ic. (See, for example, Patent Document 1 and Patent Document 2). By using this method, it is possible to obtain the IC β of the adhesive layer on the functional surface side (bump) of the ic in the 201201267. The conventional method is to set the wafer with the adhesive layer on the dicing tape with the surface of the wafer facing up. The surface of the wafer is inserted into a cutting cutter for cutting. This is the alignment when the camera reads the circuit pattern on the wafer surface and cuts it. There are "Dry" or "Dry" 'Wet' in the wafer cutting method. The method of laser or plasma in the Dry environment (dry environment) in these methods is beneficial to the pollution in processing. However, the devices used in these laser or plasma processes are not the same, and the cost of the device is more than three times that of the cutter. Therefore, "Wet" is the most common method. When the wafer of ACF or NCF is attached and cut with a cutter of the pass*, the matter of concern is contamination. This is because the ACF or NCF is located on the functional side of the wafer. Therefore, when foreign matter is contaminated, there is a possibility that the functional surface of the IC is damaged or short-circuited during the crimping. In order to avoid this possibility, when a protective film is applied to the surface of the ACF or NCF, there is a problem of workability which is peeled off during the cutting process. Further, since the protective film is also divided (singulated) together with the IC, in the step of peeling off the protective film, there is a problem in that it is difficult to peel off the protective film and peeling of the protective film remains. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2009-135348 [Patent Document 2] Japanese Patent Application Laid-Open No. Hei. No. Hei. The object of the invention is to provide a cutting method, a connecting method and a connecting structure capable of protecting after the addition of nj in 4 201201267. The wafer cutting method of the present invention, wherein the one side of the wafer having the circuit pattern has the protective film formed by the film of the film attached to the film. And the step of photographing, the photographing step is performed from the aforementioned wafer surface side position determining step attached to the wafer with the adhesive film attached to the adhesive film, according to the photographing step in the foregoing shooting step Shadow 'Image 2: Cut the position of the wafer with the film attached; cut H ';, the position of the cutting position is determined by the cutting position, and the film of the bonding film is attached to the above, and the formation is followed by a cutting groove between the surface of the film and the surface of the film and the surface of the pillar and the surface of the protective film and the contact surface of the film to form a plurality of film with an adhesive film a wafer having a wafer having a circuit pattern on one side of the wafer, a wafer having an adhesive layer on the surface of the laminate, and the like: and a pick-up step, and an adhesive layer attached to the adhesive film The wafer. The connecting method of the invention has a crimping step of transmitting a wafer with an adhesive layer picked up by the above-described round cutting method, followed by lamination of the "circuit group with electrodes" to connect the electrode with the attached There is a circuit pattern that is connected to the 曰ul ® film. The joint structure of the present invention is produced by the above-described joining method. According to the present invention, since the wafer and the subsequent layer are cut and the protective film remains in an undivided state, the 201201267 peelability of the protective film after the wafer is processed can be improved. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the following sequence will be referred to with reference to the drawings. A specific example of a method for joining a wafer example of the present invention, a connection method and a connection structure is applied. 1. Wafer cutting method 1 - 1. Attachment step 1 - 2. Photographing step 1-2-1 Cutting device 1 - 2 - 2. Shooting method 1-3. Split position determining step 1-4 - Cutting groove forming step 1-5. Picking step 2. Connecting method and connecting structure 2 - 1 · Crimp step 3. Other Embodiments 4. Example < 1. Wafer Cutting Method> As shown in Fig. 1, the wafer cutting method of the present embodiment has a attaching step S1, an imaging step S2, and a division position determining step S3. Cutting groove forming step S 4, picking step s 5 β < 1 -1 · Attachment step> As shown in Fig. 2 and Fig. 3, in the attaching step S1, there is a 6 201201267 circuit pattern, that is, a bump 16" "Functional surface 1〇a") sequentially borrows the surface-surface (surface) 10a (hereinafter also referred to as 24 ., the laminated layer 22 and the transmissive partner 24 are attached with an adhesive film. 々保4臈1 s, and the other side 39b of the Japanese yen 39 is attached to the cherries. For example, in the attachment step (4) cutting belt Shaoxiang S1 First, as shown in Fig. 2, the wafer 10 prepared by the center is fixed to the treatment; 1 as the wafer 10, can be /, 12. Round 1n + yak out, for example, wafers, etc. The semiconductor wafer is formed on the one side 10a of the circle 1 有 有 阳 阳 阳 阳 ! 千 千 千 千 千 。 。 。 。 。 。 。 。 。 。 。 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆The force 12 has, for example, a rigorous or frame-like frame 20 having a larger diameter than the diameter of the wafer 10, and a dicing tape 18 having a contiguous shape. &: 8: 8 series, for example, attached to the frame 20 The side of the face is unfolded on the inner side of the frame '20. The crystal® 10 is attached, for example, to the central portion of the jig 12. Again: the other side of the face 丨〇a is attached to the other side i 〇b The dicing tape 18 is used as the dicing tape 18, for example, an adhesive film which is weakened by the ultraviolet ray and the peeling force is reduced. Thus, after the wafer 10 is divided into a plurality of wafers 21, the dicing tape 18 is irradiated. Ultraviolet 'receives each wafer 2" to capture the wafer 21 easily from the (four) strip 18. Then 'as shown in Figure 3, on the wafer! 〇 仏 from the next day υ υ The back surface 10a is provided with a bonding film 26 formed by laminating the film 24 and the bonding layer 22. The layer 22 includes, for example, a film forming resin, a liquid hardening component, and a curing agent. Further, the bonding layer 22 may contain, for example, various rubber components. Additives such as softeners, various fillers, or conductive particles, followed by layer 22. NFC (Non Particle Conductive Film) or ACF (Anisotropic Conductive Film), anisotropic guided rock, .τ Union), or laminate 201201267 have such a person. Examples of the film-forming resin include a phenoxy resin, a polycol resin, a polyamide resin, and a polyimide resin. The film-forming resin preferably contains a phenoxy resin from the viewpoint of easiness of material acquisition and connection reliability. As the liquid hardening component, a liquid epoxy resin or acrylic acid can be exemplified. The liquid hardening component is preferably a functional group of ::! or longer, from the viewpoint of connection reliability and stability of the cured product. As the curing agent, in the case where the liquid hardening component is % milk resin, (4), amine H t 2: can be exemplified. In the case where the liquid hardening component is acrylic acid, an organic peroxide can be exemplified as the curing agent. Preferably, the thickness of layer 22 is greater than the height of projections 16, i.e., the thickness of layer 22 is preferably sufficient to cover the thickness of projections 16. Further, when the wafer 10 is divided by using a dicing apparatus or the like, the dicing sheet is prevented from being "adhered to the adhesive layer 22" as a protective film 骐 'poly 芏 田 田 田 , , , , , , , , , , , , , , , , , , , , The acid paper or the glass protective film 24 preferably has a thickness of 25 to the thickness of the film 24 which is not intended to be a target. When the protection is earlier than 25 々m, There is a step of using the cut 10 with 1 M in the middle, and the device 荨 splits the wafer 24 film 24 from the adhesive layer 22, and the thickness of the film 24 is 25... and the thickness of the protective film 24 is more than 100 _ , it is poor on the protective film. If it is protected to make the adhesive film 26, ', apply the adhesive layer 22 with 1; the protective film 24 will be difficult to apply the next | 蠖骐 蠖骐 24 and 荃 思 n fast test layer twenty two. ~on. This: The best peeling force is between. 1 to 2, the peeling between the protective film 24 and the film 2012 2 201201267 : 糸 according to, for example, JIS Z0237, when peeling off in the 180-degree direction, peeling force, peeling between the protective film 24 and the adhesive layer 22 When the force is less than 〇in /cm, there is a step of dividing the wafer by using a dicing device or the like, that is, a wafer with a bonding film which will be described later in the cutting groove forming step 84, and a film (24) and an adhesive layer. The peeling force between 22 is more than 0.1 N/cm, which is inferior to the workability. Further, when the peeling force between the protective film 24 and the adhesive layer 22 exceeds 3 〇N/cin, there is protection in the picking step S5. Only a part of the film 24 is peeled off and remains, and peeling is not preferable: Further, it is more preferable that the peeling force between the protective film 24 and the adhesive layer 22 is 〇·3 to 〇·6ν / Cm. The workability in the cutting groove forming step S4 and the peeling property in the picking step S 5 are better. The peeling force between the protective film 24 and the adhesive layer 22 can be adjusted by applying a mold release treatment to the surface of the protective film 24. The mold treatment can be performed, for example, by applying a release agent of the lanthanide to the surface of the protective film 24 The protective film 24 is implemented by drying the film 24. The peeling force between the protective film 24 and the adhesive layer 22 can also be compared with the wafer 10 and the dicing tape in the stage of the jig 12 and the wafer 10 according to FIG. The peeling force of 18 is small. Therefore, as described in detail later, the peeling property of the protective film 24 after processing the wafer 10 can be made good in the picking step. Next, for example, the use of the pressing device 28 will be continued as shown in FIG. The film % is attached to the wafer 1 、.) The pressing device 28 includes, for example, the stage 30 and the pressure fitting 32. The stage 3 is placed, for example, on the wafer 10. Further, the wafer 1 is held by the fixture 12 The state download is placed on the stage 30. Further, the stage 3 has, for example, a heating device 34. Further, 201201267 is in the stage of attaching the adhesive film 26 to the wafer 1 in the stage 34. It is also possible to use no heating press 32, for example. 3 includes a pressing member % and a holding portion 38 that holds the pressing member 36. The pressing joint 32 presses the pressing member % toward the side of the stage 3. The pressing member 36 is made of, for example, an elastic body. Body (4) astomer).!! This, compared to the metal pressing member, Month & The adhesive film 26 is uniformly attached to the wafer cassette. Next, the pressing device 28 presses between the stage 30 and the press fitting 32 with the crystal 10 having the adhesive film % disposed on the surface. The pressing member 36 of the joint 32 presses the adhesive film 26 against the surface of the wafer. Thereby, the adhesive film 26 can be attached to the wafer 1 其次. Next, as shown in FIG. The surface of the protective film with the film π attached to the film is attached to the dicing tape. ^-2. Photographing step > 曰Capture step S2, the photographing step 'attached from the film shown in Fig. 5 On the other side of the side 39b, an image of the functional surface 10a of the wafer, which is one side of the wafer 1 in the crystal ID 39, is imaged. "^-^ Cutting device> The photographing step S2' uses, for example, the cutting device 4'' shown in Fig. 5. The cutting device includes a chuck stage 42, an alignment stage 44, an imaging unit I cutting unit 48, and a control unit 52. The gripper 42 absorbs the jig by a decompression device (not shown), and fixes the jig 12 to the chuck platform 42. The alignment stage 44 moves the chuck stage 10 201201267 42 in the x direction and the y direction according to, for example, an instruction from the control unit 52. The imaging unit 46 has, for example, an imaging system that is configured by an infrared camera and that receives an optical system that reflects light on the surface of the wafer, that is, the functional surface of the wafer 1A, and an image captured by the imaging optical system. The imaging unit 46 transmits light reflected from the other surface 39b side of the wafer 39 with the adhesive film to the inside of the wafer 39 with the adhesive film, and receives the reflected light at the functional surface of the wafer iG, for example. , the image of the functional surface 1〇a of the crystal lens 10 is taken. The imaging unit 46 transmits the information of the captured scene image to the control unit 52. The cutting portion 48 cuts the wafer 1 according to an instruction from the control unit 52. For example, a cutter 5 having a wafer 1 is cut. The cutting portion presses the rotating cutter 50 against the wafer 10 to cut the wafer 10. The drive unit 56 receives information on the position of the wafer 1 from the image processing unit 54 of the control unit 52. The drive unit 56 drives the alignment stage 44 and the cut-off "H8 based on the information on the position of the divided wafer 1?. Thereby, the cutting device 40 can divide the wafer 10 (single piece;). ^-2-2. Recording Method> The shooting step S2' is to take a wafer of the wafer 39 with the carrier film for the purpose of taking a picture from the position of the functional surface iQa 14 of the wafer 1G. The image of the face. As a specific method, the second processing is performed using, for example, the above-described cutting device 40. First, the imaging unit 46 transmits the light from the other side of the wafer 39b attached to the bonding film to the inside of the wafer 39 with the adhesive film attached thereto; the function of the image is reflected light, and the crystal is photographed. Image. Next, the imaging unit 46 sends the information of the captured image to the control unit 52. Next, the image processing unit 54 of the cutting device 40 is connected to the image of the image captured by the imaging unit 46. <1-3. Splitting position determining step> The dividing position is determined in step S3, based on the male image taken in the shooting step S2, the pattern of the wafer 3 with the adhesive film is divided. 39 position. For example, the sub-determination step S3 is as shown in FIG. 6. The image processing of the cutting device 40 is not performed by the juice + T7 w, and the image recognition stroke and line 14 of the functional surface 1〇a of the crystal® 1 are determined. Line 14 divides the position of the wafer 1〇. <1 - 4. Cutting groove forming step> The cutting groove forming step 84 is, for example, as shown in Fig. 7, and is determined according to the position determined in step S3, and is connected to (4) wafer Μ, 20%, attached The cutting groove 62 is formed between the other side of the film crystallized surface 39 and the surface where the contact layer U and the protective film 24 are in contact with the surface of the protective layer 及% and the (4) contact zone. Thereby, a plurality of wafers 60 with an adhesive film attached to the wafer 64 and the protective film 24 with the adhesive layer are provided in the cutting groove forming step. In the cutting groove forming step S4, when the plurality of wafers 6 with the adhesive film are formed by the cutting and boring device 4, the wafer 21 from the adhesive layer 22 can be prevented from being displaced or peeled off. For example, the cutting groove forming step S4 performs the following processing using the cutting device 40 shown in Fig. 5 described above. First, when the image processing unit 54 determines to divide the wafer 1 in the X direction along the scribe line u, the drive unit 56 drives the alignment stage 44 to move the chuck stage 42 so that one end of the scribe line 14 is located at the cutter. Below 5〇. Next, the 'drive unit 56 drives the cutting portion 48' to move the cutting portion 48 to the lower side in a state where the cutter 5 is rotated 12 201201267 to press the cutter 50 against the wafer. Next, the drive portion 56 drives the alignment. The stage 44 moves the wafer ig in the X direction. As a result, in the cutting groove forming step S4, a plurality of wafers (9) having the adhesive film can be formed by dividing the wafer H)' along the scribe line 14 to form the wafer 64 with the adhesive layer and the protective film. Further, in the cutting groove forming step S4, the protective film 24 is attached to the surface of the wafer 10, and the wafer 1 is divided by the I22, whereby the cutting layer can be prevented from adhering to the surface of the adhesive layer 22: < 1 - 5. Pickup Step > The pickup step S5 picks up (peeles) the wafer 64 of the subsequent layer from the wafer 6 () of the film. For example, in the pickup step S5, as shown in FIG. 7, the wafer 60 with the film attached to the film is pulled in the direction of the arrow of FIG. 8 from the subsequent layer of the wafer 6G to which the film is attached. 22 and the protective film 24 (four) ^: the wafer 64 with the adhesive layer attached thereto. Thereby, the wafer 64 to which the adhesive layer is attached is picked up from each of the plurality of wafers 64 with the adhesive layer attached thereto. As described above, the wafer cutting method of the present embodiment is applied to the wafer 39 with the adhesive film, and the other surface 39b from the wafer 39 with the adhesive film is formed to the adhesive layer 22 and the protective film. The cutting groove 62 between the 24 contact surface and the surface of the protective film μ and the dicing tape 18 is in contact with each other. As a result, the seven-knife cutting method of the wafer of the present embodiment can prevent the bonding of the wafers on the surface of the contact layer 22 by manufacturing the wafer 6 with the adhesive film in a state where the surface of the I 22 is covered with the protective film 24. Chips. Therefore, in the wafer cutting method of the present embodiment, the 201201267 cutting method can prevent contamination of foreign matter when the wafer 10 is divided. Further, in the wafer cutting method of the present embodiment, since the wafer 10 and the subsequent layer 22 are cut and the protective film 24 is not completely divided, the peeling force between the protective film 24 and the adhesive layer 22 is higher. Since the wafer crucible and the dicing tape i 8 彔J have a small force, the peeling property of the protective film 24 after the wafer 1 is processed is good. Further, in the wafer cutting method of the present embodiment, since the protective film 24 is not singulated when the wafer 64 with the adhesive layer is attached, the peeling force between the protective film 24 and the adhesive layer 22 is higher than that of the wafer 1 The peeling force with the dicing tape 18 is small. Therefore, it is possible to prevent only a part of the protective film 24 from being peeled off. That is, in the method for manufacturing a wafer according to the present embodiment, after the wafer 1 and the subsequent layer 22 are cut, the protective film 24 remains in a state of not being singulated, and the month b protects the processed wafer 1 The peelability of the film 24 is good. <2. Connection method and connection structure> As shown in Fig. 9, the connection method of the present embodiment includes an attachment step S1, an imaging step S2, a division position determining step S3, a cutting groove forming step S4, and a pickup step. S5. Pressure-bonding step S6» Further, the attaching step S1 to the pick-up step S5 are the same as the processing shown in FIG. 1 described above, and thus detailed description thereof will be omitted. <2-1. Crimp Step> In the crimping step S6, the wafer 64 with the adhesive layer picked up in the pick-up step S5 is bonded to the circuit substrate 7' having the electrode 72 through the adhesive layer 22 to be connected. The electrode 72 is attached to a bump 16 of the wafer 64 to which the layer is attached. For example, in the crimping step S6, the following processing is performed using the pressing device 14 201201267 28 shown in Fig. 10 . First, a plurality of attached w 曰曰 sheets 64 are temporarily mounted on the circuit board 70. That is, the slab 64 with the adhesive layer on which the protective film 24 has been peeled off is disposed at a predetermined position on the surface of the circuit board 70. The wafer 64 with the contiguous sound and the circuit substrate 70 are aligned such that the bumps 16 with the subsequent wafers 64 attached to the electrodes 64 are electrically connected to the electrodes 72 of the circuit substrate 70. Next, the circuit board 7A on which the wafer 64 having the adhesive layer is placed is placed on the stage 30 of the pressing device 28. Next, the wafer 64 with the adhesive layer is pressed against the surface of the circuit board 70 by the pressing member 36 held by the press fitting 32. For example, a method in which the entire circuit board is pressed by an elastomer in a state called an EBS (Elasticity Bonding System) method is used, and a plurality of wafers temporarily placed on the same substrate are once pressed. The method of picking up. In the EBS method, a crimping member made of an elastic body is provided, and a recessed portion is provided in a portion of the crimping joint body opposed to the circuit board 70. That is, in the EBS method, a plurality of wafers 64 with an adhesive layer are pressed by a thermocompression bonding joint (having an elastic body covering the entire printed substrate), and the wafer 64 with the subsequent layer is pressure-bonded. Thereby, the wafer M with the adhesive layer can be sequentially applied to the surface of the circuit board 7 through the adhesive layer 22. As described above, the connection method of the present embodiment can be used to manufacture the connection structure 8 of the bump 16 of the wafer 64 with the adhesive layer and the electrode 72 of the circuit board 70 through the adhesive layer 22 as shown in FIG. 3. Other Embodiments> 15 201201267 In the above-described wafer cutting method, in order to make the thickness of the wafer ίο thin, the film may be attached to the attaching step S1 as shown in FIG. The other side of the wafer 39 is now ground to a grinding step S0 of a predetermined thickness. Such grinding can be performed by, for example, a grinding device or the like. In the above-described division position determining step S3, the image processing unit 54 may recognize the position of the projection 16 or the alignment mark from the image of the functional surface of the wafer 1 to recognize the position of the scribe line 14. Further, the pressing member 36 may be an elastic body. Thereby, even in the case where a plurality of wafers 64 with an adhesive layer are simultaneously pressed on the surface of the circuit board 7, the wafer cassette with the adhesive layer and the circuit substrate 70 can be satisfactorily connected. Further, in the above-described embodiment, the case where the pressing member % uses an elastic body and a plurality of wafers 64 with the subsequent layers are once mounted on the circuit board 70 is described. However, the method of attaching the wafer 64 of the subsequent layer to the circuit substrate 7 is not limited thereto. For example, the wafer 64 with the adhesive layer may be mounted on the circuit board 70 without using an elastomer (e-0). Further, a plurality of wafers 64 with an adhesive layer may be mounted on the circuit board 70 one by one. 'In addition, the above-described embodiment describes the case where the pressing device 28 is attached to the crystal B] 10 by using the pressing device 28, and then the method of attaching the 胄% to the wafer 10 is not limited. For example, the adhesive film 26 may be attached to the wafer 1 by using a roller laminator 8. Further, the pressing member 36 is not limited to the above-described EBS, and does not interfere with a general thermocompression bonding joint. For example, 'hard metal crimping joints' or ultrasonic pressures 16 201201267 joints. For example, the wafer 64 with the adhesive layer may be attached to the circuit substrate 70 as shown in Fig. 13. Fig. 13 φ .. ^ t The same or like parts as those in FIGS. 1 to 12 are given the same reference numerals as in FIG. 1 to FIG. 12, and the repeated invention is omitted. The device 82' electrically connects the circuit substrate and the wafer 21 by flip chip bonding. The pressing device ^ is provided with a stage μ and a tool for removing the tool. 2 and 蓣a 八 ϋ The cutter has the same configuration as the pressing device 28 and the stage 30. The Tao Jing tool 86 presses the wafer 64 with the + β ^ ^ 7 splicer layer on the circuit board 70. The tool 86 can also press a plurality of wafers 64 with an adhesive layer on the circuit substrate 7 满. The ceramic material 86 can also include ceramics such as tantalum carbide, niobium nitride, aluminum nitride, and the like. The ceramic tile 86 can also be an example of a crimping joint. The ceramic tool 86 can also have a heating device 88 that is twisted with a ^ cc ..., and has a heating device 88. The heating device 88 can also be a ceramic heater. After the wafer 6 with the adhesive film is peeled off and the adhesive layer is attached, the image capturing portion 46 of the cutting device 40 also shoots an image of the surface of the Japanese yen 1 〇, whereby the image processing portion 54 can process the following sound...曰曰囫10 The image of the surface of the 曰曰囫10, and it is confirmed whether or not the day-to-day piece 64 of the negative-attached layer is peeled off from the date piece 60 to which the carrier is attached. For example, it may be separated from the wafer 60 with the adhesive film attached thereto. The pick-up device of the wafer 64 having the adhesive layer is confirmed to be attached to the next; The film of the film is peeled off. The film of the film is also peeled off. For example, in the case where the layer is attached from the layer which is attached with the next layer, the day piece 60 is a day piece 64 which is separated from each of the layers attached to the layer. The pick-up device picks up the wafer 64 17 201201267 with the adhesive layer, and peels off the wafer 64 with the adhesive layer from the protective film 24 of the wafer 60 with the adhesive film. When the wafer 64 of the subsequent layer is attached, the pick-up device and the wafer 64 with the adhesive layer attached to each other are in contact with each other at a position farther from the dicing tape 18 at the front end of the pick-up device. Therefore, it is also possible to confirm whether or not the wafer 64 with the subsequent layer has been peeled off from the protective film 24 of the wafer 6 to which the film is attached, based on the pressure change detected by the pickup device. [Examples] Specific examples of the invention are described below. Further, the scope of the present invention is not limited to any of the following embodiments. <Production of Adhesive Film> As an adhesive layer, a protective film using NCFe in each of the adhesive films is a polyethylene terephthalate film (hereinafter referred to as "PET" having a thickness different from that of the release treatment method. membrane"). <Adhesive film using a binder α> An adhesive layer was applied onto each of the protective films using a coating bar. An oven in which an H film coated with an adhesive layer was placed in an X 8 G c oven was used to volatilize the solvent to dry the adhesive layer, thereby producing an adhesive film of a NCF and a (4) film which is a sequential build-up layer. In the film, the peeling force of the adhesive layer and the protective film is adjusted by applying a mold release treatment to the surface of the protective layer before applying the adhesive layer on the film: the off-core treatment is performed by The release agent is applied by applying a protective film to the protective film sheet and drying the protective film. By adjusting the combination of the stripping agents of Shishi, the difference between the peeling force of the adhesive layer and the protective film is made! 18 201201267 The adhesive films of Comparative Examples 1 to 5 shown in Examples 1 to 11 and Table 2 shown in Table 01267. [Table 1] Thickness of the cutting start surface protective film Om) Peeling force (N/cm) Semi-cutting workability of the protective film Removability connection example Example 1 Back surface 50 0.170 Δ 〇〇 Example 2 Back surface 50 0.300 〇 ◎ 〇 Example 3 Back surface 50 0.520 〇 ◎ 〇 Example 4 Back surface 50 0.720 〇〇〇 Example 5 Back surface 50 1.000 〇〇〇 Example 6 Back surface 50 0.100 X Δ Δ Example 7 Back surface 50 1.870 〇 Δ Δ Example 8 Back surface 25 0.300 〇〇〇 Example 9 Back surface 38 0.300 〇 ◎ 〇 Example 10 Back surface 75 0.300 〇 ◎ 〇 Example 11 Back 100 0.300 〇〇〇 [Table 2] Cutting start surface protection Thickness peeling force of film (N/cm) Semi-cutting workability of protective film Removability of connection example Comparative Example 1 Surface 100 0.300 〇X peeling residue Δ Comparative Example 2 Surface 50 0.300 〇X peeling residue Δ Comparative Example 3 Back 100 0.300 flawless XX Comparative Example 4 No X on the back side (for DG-Tape transfer) X Comparative Example 5 Surface None - - - / Δ <About Thickness of Protective Film> The thickness of the protective film shown in Table 1 and Table 2 was measured using a micrometer (manufactured by Mitutoyo Co., Ltd.). <Release of the protective film against the film> 19 201201267 Table! And the peeling force of the protective film against the film shown in Table 2
Tensile·份有限公司〇Hen 糸使用 疫卡a ^ 則疋。拉展方向為180 度方向。拉展方法為T型剝 3〇〇_。測定係以 拉展速度設定為每分 施。 疋係以皿度23±2C、溫度55±io%rh之條件實 其次，將接著膜之各個貼附於石夕晶圓之一面全面準 :用於切割試驗之試料。石夕晶圓係使用直徑為"、厚度 為爪者。切割試驗中 _ 货運仃圖9所不之各步驟之處 切肖二：’表1及表2所示「保護臈之半切割」係表示在 ==步驟S4中形成之切削槽之有無。當此保護膜之 半切割為「有，$ 噌胳 」之清形，係在切削槽形成步驟S4中形成保 蠖膜之切入量為2〇"m之切削槽。 〈關於加工性> 11係在切削槽形成步驟S4中’藉由切割裝置形 烕複數個附有接著膜$ a 要者膜之日日片時測定從接著層偏離或脫落之 数目來評價。 . 表2中加工性為「〇」係指於丨〇點平均評價 二示無晶片之偏移或脫落。加工性為「△」係指於1〇點 =評價中观未滿之晶片已偏移或聽。加工性為％ 货' 心於1 〇點平均評僧φ 賈中50 /〇以上之晶片已偏移或脫落。 <關於剝離性> :〗離f生係藉由於拾取步驟“中從附有接著膜之晶片拾 寸有接著層之晶片時觀察保護膜之剝離性來評價。 20 201201267 J表示剝離性非常良好。 。剝離性為「△」表示有 J表示有非常難以脫附或 表1及表2中，剝離性為「◎ 剝離性為「〇」表示剝離性良好 一部分難以脫附處。剝離性為「χ 無法脫附處。 Ί 土 運接可靠 連接可罪性，係針斜圖Q私- 于圖9所不之以壓接步驟S6所製得 之連接構造體（IC)使用帏Tensile Co., Ltd. 〇Hen 糸 uses the plague card a ^ then 疋. The direction of the stretch is 180 degrees. The stretching method is T-type peeling 3〇〇_. The measurement is set to the per-split rate at the drawing speed. The tantalum is based on the condition of 23±2C and the temperature of 55±io%rh. Next, each of the adhesive films is attached to one of the surface of the Shixi wafer: the sample for the cutting test. Shi Xi wafers use a diameter of "," the thickness of the claws. In the cutting test _ Cargo 各 各 9 9 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切 切When the half cut of the protective film is "clear,", the cutting groove is formed in the cutting groove forming step S4 in which the cutting amount of the protective film is 2 〇 " m. <About the workability> 11 is evaluated in the cutting groove forming step S4 by measuring the number of deviations or peelings from the subsequent layer when the plurality of day sheets having the film of the adhesive film are attached by the cutting device. In Table 2, the processability is "〇", which means that the average evaluation at the defect point indicates no wafer offset or shedding. The processability is "△" means that at 1 point = the wafer that has not been evaluated is offset or heard. The processability is %. The product is rated at 1 〇 平均 平均 僧 贾 贾 贾 50 50 50 贾 贾 贾 贾 贾 。 。 。 。 。 。 。 。 。 。 。 <About the peeling property>: The peeling property is evaluated by observing the peeling property of the protective film when the wafer having the adhesive layer is picked up from the wafer with the film attached thereto in the picking step. 20 201201267 J The peeling property is "△", and it is indicated that J indicates that it is very difficult to desorb or in Tables 1 and 2, and the peeling property is "◎ peeling property is "〇", indicating that it is difficult to remove the peeling property. The peeling property is "χ Unable to be detached. Ί 可靠 可靠 连接 连接 连接 , , , , , , , , , , , , , , , , , , , , , , , - - - - - - - - - - - - - - - -
J使用畸變測量器（4333AJ uses a distortion measurer (4333A
HEWLETTPACKARD公司製），藉由四端子法，⑽品數N -1 〇(4(X樣品）m00ch中之正常連接通道 評價。 作為用以評價連接可靠性之評價基材，係使用 6.3X6.3mm之1C。關於壓接步驟％之壓接條件，係進行如 下之暫搭載步驟及本壓接步驟。亦即，將附有接著層之晶 片暫搭載於絕緣基板上之暫搭載步驟中，係設在〇 2Mpa、 80°C持續2秒間之條件。又，在藉由熱壓接壓接頭按壓附 有接著層之晶片、使附有接著層之晶片本壓接之本壓接步 驟中，係設每一晶片125N、在18(TC持續2〇秒間之條件。 表1及表2中，連接可靠性為「〇」表示97%以上之 通道（3 88ch以上）為連接良好。連接可靠性為r △」表示 以上97%未滿之通道（360ch以上387ch以下）為連接良好。 連接可靠性為「X」表示90%未滿之通道（360ch未滿）為連 接良好或所有通道無法壓接。 <實施例及比較例之評價結果> 如表1所示，實施例1〜實施例11中，加工性、保護 21 201201267 膜剝離性及連接可靠性均良好。此等中，由於實施例2、實 施例3、實施例9及實施例1〇係保護骐厚度在3〇〜75#m 之範圍内，且剝離力在0.3〜〇.6N/cm之範圍内因此保護 膜剝離性特別良好。 另一方面，如表2所示，比較例丨、比較例2中，雖進 行保護膜之半切割，但由於從晶圓表面開始切割因此就 保《蒦膜剝離性而s非常難脫附，而有剝離殘留。又，比較 例1、比較例2中，由於從晶圓表面開始切割，因此連接可 靠性大致非良好。 又，如表2所示，比較例3中，雖從晶圓背面進行切 割’但由於無保護膜之半切割’因此保護膜剝離性及連接 可靠性並非良好。 又’如表2所示’比較例4中，雖從晶圓背面進行切 割’但由於無保護膜’因此保護膜非常難以脫附，附有接 著層之晶片轉附至切割帶，保護膜剝離性並非良好。又， 比較例4中’由於無保護膜，因此連接可靠性並非良好。 又’如表2所示，比較例5中，由於從晶圓表面進行 切割且無保護膜’因此保護膜剝離性並非良好，連接可靠 性亦不大良好。 【圖式簡單說明】 圖1係用以說明本實施形態之晶圓之切割方法一例之 流程圖。 圖2係顯示於治具接著晶圓之階段之一例之概略圖。 22 201201267 圖3係顯示於曰 a曰圓貼附接著膜之階段之一例之概略圖。 圖4係將附古& β τ胥接著膜之晶圓之保護膜之面貼附於切割 帶之階段之~你丨+ , 例之概略圖。 圖5係顯 例之概略圖。 τ載置有附有接著膜之晶圓之切割裝置之一 圖 略圖。 6係顯示拍攝 步驟及分割位置決定步驟之一例之概 圖7係顯不切削槽形成步驟之一例之概略圖。 圖8係顯示拾取步驟之一例之概略圖。 1^1 9 ® ’、用以說明本實施形態之連接方法一例之流程圖。 圖10係顯示壓接步驟之一例之概略圖。 圖11係顯示在壓接步驟被壓接之連接構造體之一例之 概略圖。 圖12係用以說明其他實施形態之晶圓之切割方法一例 之流程圖。 圖13係顯示壓接步驟之另一例之概略圖。 【主要 10 元件符號說明 晶圓 10a —面 10b 另一面 12 14 治具 劃線 突塊 23 16 201201267 18 切割帶 20 框架 21 晶片 22 接著層 24 保護膜 26 接著膜 28 按壓裝置 30 載台 32 壓接頭 34 加熱裝置 36 按壓構件 38 保持部 39 附有接著膜之 39a 一面 39b 另一面 40 切割裝置 42 夾頭平台 44 對準載台 46 拍攝部 48 切削部 50 切刀 52 控制部 54 影像處理部 56 驅動部 24 201201267 60 60b 61 62 64 70 72 80 84 86 附有接著膜之晶片 背面 切削槽 保護構件 附有接者層之晶片 電路基板 電極 連接構造體 載台 陶瓷工具 25HEWLETTPACKARD company, by the four-terminal method, (10) number of products N -1 〇 (4 (X sample) m00ch in the normal connection channel evaluation. As evaluation substrate for evaluation of connection reliability, the use of 6.3X6.3mm 1C. The crimping condition of the crimping step % is carried out as follows: the temporary mounting step and the crimping step are as follows: that is, the step of temporarily mounting the wafer with the adhesive layer on the insulating substrate is carried out In the case of 〇2Mpa at 80 ° C for 2 seconds, in the present crimping step of pressing the wafer with the adhesive layer and crimping the wafer with the adhesive layer by the thermocompression bonding joint 125N per wafer, at 18 (TC lasts for 2 sec.) In Tables 1 and 2, the connection reliability is "〇", indicating that 97% or more of the channels (3 88ch or more) are well connected. The connection reliability is r. △" indicates that the above 97% of the channels (360ch or more and 387ch or less) are well connected. The connection reliability is "X", indicating that 90% of the channels are not full (360ch is not full), the connection is good or all channels cannot be crimped. The evaluation results of the examples and comparative examples are as shown in Table 1. In the first to the eleventh examples, the workability and the protection 21 201201267 were excellent in film peelability and connection reliability. In the above, the protection of the examples 2, 3, 9 and 1 was The thickness is in the range of 3 〇 to 75 #m, and the peeling force is in the range of 0.3 to 6.6 N/cm, so that the peeling property of the protective film is particularly good. On the other hand, as shown in Table 2, Comparative Examples and Comparative Examples In the case of the second half, in the comparative example 1 and the comparative example 2, in the case of the dicing from the surface of the wafer, the peeling property of the ruthenium film is very difficult to be detached and there is peeling residue. Since the dicing was started from the surface of the wafer, the connection reliability was not good. As shown in Table 2, in Comparative Example 3, the dicing was performed from the back surface of the wafer, but the film was peeled off due to the absence of the protective film. The reliability and the connection reliability are not good. Further, as shown in Table 2, in Comparative Example 4, although the cutting was performed from the back side of the wafer, the protective film was very difficult to be desorbed due to the absence of the protective film, and the wafer was attached with the adhesive layer. Attached to the dicing tape, the protective film is not peelable Further, in Comparative Example 4, the connection reliability was not good because there was no protective film. Further, as shown in Table 2, in Comparative Example 5, since the film was cut from the surface of the wafer and there was no protective film, the protective film was peeled off. The performance is not good, and the connection reliability is not good. [Simplified Schematic] FIG. 1 is a flow chart for explaining an example of the wafer cutting method of the embodiment. FIG. 2 is a stage of the jig and the wafer. A schematic diagram of an example. 22 201201267 Fig. 3 is a schematic view showing an example of a stage in which a film is attached to a film. Fig. 4 is a surface of a protective film of a film attached to the film of the film & Attached to the stage of the dicing tape, you 丨+, an overview of the example. Fig. 5 is a schematic diagram showing an example. τ is a schematic view showing a cutting device with a wafer attached to the film. Fig. 7 is a schematic diagram showing an example of the steps of the photographing step and the division position determining step. Fig. 7 is a schematic view showing an example of the step of forming the non-cutting groove. Fig. 8 is a schematic view showing an example of a pickup step. 1^1 9 ® ', a flowchart for explaining an example of the connection method of the present embodiment. Fig. 10 is a schematic view showing an example of a crimping step. Fig. 11 is a schematic view showing an example of a connection structure which is crimped at the pressure bonding step. Fig. 12 is a flow chart for explaining an example of a method of cutting a wafer according to another embodiment. Fig. 13 is a schematic view showing another example of the crimping step. [Main 10 component symbol description wafer 10a - face 10b other face 12 14 fixture scribe block 23 16 201201267 18 dicing tape 20 frame 21 wafer 22 next layer 24 protective film 26 followed by film 28 pressing device 30 stage 32 crimping joint 34 Heating device 36 Pressing member 38 Holding portion 39 Attaching film 39a One side 39b The other side 40 Cutting device 42 Chuck platform 44 Aligning stage 46 Photographing portion 48 Cutting portion 50 Cutter 52 Control portion 54 Image processing portion 56 Drive Department 24 201201267 60 60b 61 62 64 70 72 80 84 86 Wafer-backed cutting groove protection member with a film attached to the wafer circuit board electrode connection structure body ceramic tool 25