201142996 六、發明說明： 【發明所屬之技術領域】 種以種影像感測晶片封裝結構，尤指-種以覆日曰封裝技術將影像感測晶片嵌入 :載座上之複數個電性連通結構電性連接，二= =凹階與該影像感測晶片之間隙充填並包覆可有效^ 减品製程效率與薄型化的一種影像感測晶片封裝結構。 【先前技術】 科技的日新月異帶㈣訊電子產品的進步，而各式的 電子產品零組件均姆輕薄短小的目標邁進。如何使產品 更具人性化與多機一體的概念，體積縮小攜帶方便符合人 f工程，更合乎㈣者便利追求時尚_待與需求，是目 電子產〇〇市场主要的發展課題之一。而將手機結合數位 相機功能甚至是廳絲記㈣腦，或是將PAD結合數 位相機功能’即是其巾—項重要之改良突破，如何使其體 積更輕薄，製造過程更簡單組裝更方便迅速，也將是業界 發展的主要目標。 —立請參閱圖一所示，其係為習用影像感測晶片封裝結構 不思圖。習用之影像感測晶片封裝結構1係結合於一鏡頭 模組9之上，其包括有：一影像感測晶片11、一基板12、 以及複數金屬線13。其中，將該影像感測晶片丨〗設置於 該基板12上，以該複數金屬線13將該影像感測晶片11 與該基板12做電性連接。利用該鏡頭模組9下方之一凹 槽91覆蓋並環繞該影像感測晶片U且設置於該基板12 201142996 上’用以保護該影像感測晶片11以及輿該基板12相導通 之複數金屬線13，而於該影像感測晶片u上方所對應之 該凹槽91崎置-賴蓋板92，使該影像制晶片u 經由該玻璃蓋板92並透過該鏡頭模組9内所預設之一鏡 片組93操取外界影像，且由該基板12下方所言免之若干锡 球8與其他電子元件之一電路板1〇相連結。 然而’習用之影像感測晶片封裝結則，其影像感測 晶片11需以利用打金屬線13的方式，使該影像感測晶片 Π與該基板12相互電性連接，且該鏡職組9不易將影 影像感測晶片封裝結構i定位於固定之位置上，不僅組裝 繁複更無法進一步達到薄型化的需求。 【發明内容】 本發明之第—目的，在於提供—f彡像❹1晶片封裝結 構，其係使用一中空且呈一階梯狀之承載座，可將一影像 感測晶片置於其中空處所預設之—凹階上，並與該承載座 上之複數個雜連通結構電性連接，達着低該影像_ 晶片封裝結構的高度之目的。 本發明之另—目的’在於提供—輯_晶片封裝結 構，其係彻—模具靖出成形之方式於該影像感測晶片 上形成-凸出部’藉以令—鏡頭模組精準的定位結合於該 影像感測W縣結構上，翻減少誤差且城更方便迅 速之目的。 本發明之又-目的，在於提供—影像制晶片封裝結 構’係絕緣娜職影像_晶片封裝於該賴座 201142996 之該凹階内，使達_影像_ ;封裝結财受其他電 磁或靜電干擾、以及防漏光之目的。 為達上述之目的，本發縣提供—影像感測晶片封裝 、=構，其係包括有：-承載座、—影像感測晶片、一透明 蓋板、以及-絕緣㈣所城。縣載絲包括：一具有 預定厚度之巾雖糾及概個紐連通結構。該中^框 架係具有-第-表面以及-第二表面，並且，該承載座之 中空框架内緣由該第二表面往該第_表面方向呈階梯狀 漸縮之-凹階。於承載座之凹_與外週緣上均設有複數 健點’域㈣餘個電性連職構將承載座之凹階内 與外週緣上之複數接點相互對應電性連接。 該影像感測晶片則包括有：—作動面以及一非作動 面。該作動面可以覆晶封裝技術鑲嵌於該承載座之該凹階 内，使該影像制晶狀該作動面上—影像制區裸露於 該承載座之該第-表面中央之—鏤空處^以一導電材 料將该影像制區厢之複數轉電端與該複數個電性 連通結構錄凹_之複數接職魏電性連接。進而利 用該絕緣體㈣像感U之非作祕於該凹階處内 包覆封裝’錢f彡诚U雖結構不受其他電磁或靜 電干擾以及達到防漏光之效果。 該透明蓋板係覆蓋於該承載座之該第_表面中央且 該透明蓋板週緣可藉由-黏合劑固定於該承載座上。該承 載座之第二表©外週緣上之該電性連通結構另一接點可 利用銲錫與_基紐電親接，触朗節省製造成本以 及更能使其達到輕薄短小的目的。 201142996 【實施方式】 為了能更清楚地描述本發明所提出之影像感測晶片 封襄結構’以下將配合圖式詳細說明之。 請參閱圖二、圖三、圖四所示，其中，本發明第一較 佳實施例之該影像感測晶片封裝結構2係包括：一承載座 21、一影像感測晶片22、一透明蓋板23 _以及絕緣材料 24所共同組成。該承載座21包括有：一中空框架211、 以及複數個電性連通結構所構成。於本發明第一較佳實施 例中之該電性連通結構係為複數個金屬導腳212。該中空 框架211更包括有：一第一表面21U、一第二表面2112、 一凹階2113、以及一鏤空處2114。該影像感測晶片22包 括有：一作動面221、一非作動面222、一影像感測區223、 以及複數個導電端224。 該承載座21可以是藉由在一導線架（LeadFrame) 上以灌模或射出的方式令該中空框架211與導線架之該 金屬導腳212 (也就是電性連通結構之第一實施例）相結 合’且該中空框架211係具有預定之厚度。於該中空框架 211中央内緣處係呈一階梯狀環繞，並由該承載座21之 第二表面2112往該第一表面2111方向呈階梯狀漸縮形成 一凹階2113。並且，該凹階2113所框圍之開口面積與該 影像感測晶片22之該作動面221大致相對應。該承載座 21之材質可以是玻璃布基有環氧樹脂(pR_4、FR-5)、聚醯 亞胺樹脂(PI)、BT樹脂、聚苯驗樹脂(pP0)、以及陶瓷基 板其中之一。 201142996 該影像感測晶片22係用來擷取外界影像，通常是電 荷耦合裝置（charge coupled device，CCD)或互補式金屬 氧化半導體（complementary metal oxide semiconductor， CMOS)影像感測裝置。 該複數個金屬導腳212係為一平面條狀且大致呈放 射型態環繞並嵌附於該中空框架211外緣之厚度並彎折 且喪附於該第一表面2112之上，進一步彎折延伸並嵌附 於該凹階2113之上。該金屬導腳212係可以藉由一金屬 薄片運用沖壓或蝕刻的方式所形成，而該金屬導腳212 可以是銅、鋁、合金、或其他導電金屬材料其中之一。該 複數金屬導腳212之一端係彎折嵌附於該承載座21之凹 階2113内以作為與影像感測晶片22電性連接之複數接點 之用；而複數金屬導腳212的另-端則係彎折嵌附於該承 載座21之該第二表面2112之外週緣部分以提供與其他電 子元件進行電性連接的複數接點之用。 該凹階2113與該第二表面2112形成-適當之落差高 度，使該影像細⑼22卩覆g封紐鋪嵌於該凹階 2113的同時，不僅使該影像感測晶片22之該作動面221 鎮卡於該凹階2113上’更將該影像_“ 22上之複數 個導電端224分別與弯折於該凹階2113内之該金屬導腳 212 -端並利用一導電材料6做電性連接，藉以降低橋接 時短路之風險。該導電端224係可以是雜環繞於該影像 感測區223周圍。 在此同時，可將該導電端224所環繞之該影像感測區 223裸露於該承載座21之該第—表面2111中央，也就是 201142996 該影像感測區223裸露於該中空框架2i丨之 中央。該導電材料6可以是導電膠、銲錫或以錫球焊接其 中 ____ 請參閱圖五並配合圖四所示，其中，該承載座21之 該凹階2113之垂直深度h敍於鱗於奶彡像感測晶片 22之厚度Η。運用該承载座21之該中空框架211内所形 成階梯狀之該凹階2113處’以覆晶封裝技術可輕易的將 s玄影像感測晶片22之該作動面221喪合於該承載座21 之凹階2113内’使該影佩測晶片22之該影像感測區 223對應於該中空框架211中央之該鏤空處2114，且於該 影像感測晶片22之該非作動面222上方，填入該絕緣材 料24並予以封裝’進一步將該影像感測晶片22之該非作 動面222加以包覆’且該承載座21之該凹階2113與該影 像感測晶22片間之空隙也一併運用該絕緣材料24予以充 填，由於該絕緣材料24可提供一屏障的效果，故能進一 步達到防電磁干擾（ΕΜΙ)的功效，並可同時保護該影像 感測晶片22於該承載座21内不受震動之干擾影響。 該透明蓋板23覆蓋於該影像感測晶片22之該作動面 221上’且鑲嵌於該中空框架211之該第一表面2ιη中 央之該鏤空處2114，並可於該透明蓋板23週緣塗佈一黏 合劑7 ’可使其該透明蓋板23固定黏著於該承載座21之 該鏤空處2114上，藉以保護該影像感測晶片22之該影像 感測區223不至於被外界灰塵微粒所污染。該透明蓋板 23可以是紅外線濾光玻璃、素玻璃、抗反射玻璃及藍玻 璃其中之一。 201142996 請參閱圖四A所示，其為本發明影像感測晶片封裝 結構第一較佳實施例之玻璃蓋板另一組裝示意圖，其中， 與圖四之該玻璃蓋板23結合方式不同處在於，該透明蓋 板23的尺寸係略大於鏤空處2114且係透過該黏合劑7結 合並固定於該承載座21之該第一表面2U1上。 請參閱圖六A、圖六B所示，其中，於該影像感測 晶片封裝結構2之封裝製程中更包括一封裝模具3，該封 裝模具3係包括：一第一模具31以及一第二模具32。該 第一及第二模具31、32係分別包括有：一第一模穴311 以及一第二模穴321。該影像感測晶片22與該承載座21 係封閉於該第-與第二模穴3卜32之中，並於該封裝模 具3上设有至少一進料孔33，利用至少一射出裝置4 (射 出成形機）將該絕緣材料24灌入於該進料孔33且進一步 注入於該封裝模具3之内，亦即將該絕緣材料24填充至 該第一與第二模穴31、32之中。 也就是說，利用該封裝模具3與該射出裝置4以射出 成形的方式使該影像感測晶片封裝結構2進行快速且精 达、的封裝量產。將該影像感測晶片封裝結構2未封裝之半 成品至入於該封裝模具3之該第一模穴311及該第二模穴 321之中’透過該第一模具31上之該進料孔33將該絕緣 材料24經由該第-模穴311注入於該影像感測晶片22之 該非作動面222上，進而將該承載座21之該凹階2113與 該影像感測晶>1 22關之_予以填滿，待該絕緣材料 24凝固時隨即將該雜模具3之該第―、以及第二模具 31 32進行該景“象感測晶片封裝結構2之脫膜程序，藉 201142996 以完成該影像感測晶片封裝結構2之封裝製程。 以下所述之本發明其他較佳實施例中，因大部份的元 件係相同或類似於前述實施例’故相同之元件與結構以下 將不再贅述，且相同之元件將直接給予相同之名稱及編 號’並對於類似之元件則給予相同名稱但在原編號後另增 加一英文字母以資區別且不予贅述，合先敘明。 請參閱圖七A、圖七B所示，本發明影像感測晶片 封裝結構第一較佳實施例與上述圖六a、圖六b第一較 佳貫施例之影像感測晶片封裝結構與封裝模具不同點在 於，該影像感測晶片封裝結構2a之該第二模具32a上另 外又有該進料孔33a’該封裝模具3a之該進料孔33a係與 該第二模穴321a相貫通，且於該帛二模穴321a内設有至 夕凹槽3211a ’使該絕緣材料24藉由該射出裝置4透 過該第二模具32a上所設置之該進料孔33a射出注入於該 第二模穴321a時，該絕緣材料24即灌入該凹槽32山之 内，使其於該承載座21a之該中空框架2Ua的該第一表 面2111a上形成-凸出部21Ula，而該凹槽則a内所凝 固成形之該絕緣材料24也就是該凸出部2 i n i a於該第一 表面2111 a上環繞於該透明蓋板幻週緣。 請參酬八所示，本發邮二健實侧之該影像 測晶片封裝結構2a利用該第二模穴321内之該凹槽32山 注入該絕緣材料24，進而於該承载座仏之該第一表面 2111a上形成具有一預設高度之該凸出部2iiua，使 頭模組5結合贿⑼城結構％之該承載座 21a ^L ° 201142996 也就是說’將該鏡頭模組5下方設置於該中空框架 211a之該第-表面2111a上時，藉由該第一表面 所形成之該凸出部21111a與該鏡頭模組5下方處之一結 合端51進行定位卡合’進—步令該鏡賴組$内所設1 之-鏡片組52之軸心位置準確的與該影像感測晶片22 的該影像感測區223中央相對應，達到提供該影像感測晶 片封裝結構2a快速並準確的與該鏡頭模組5相姓人定 位，且同時降低該影像感測晶片封裝結構2a與該^模 組5組合後之整體高度。 _ 清參閱圖九A、圖九B所示，本發明影像感測晶片 封裝結構第三難實關與上_七A、圖七B第二較 佳實施例之影像感測晶片封裝結構與封裝模具不同點纟 於’該景>{象感測晶片封裝結構2b之該承載座21b的該第 一表面2111b上設有至少一貫孔21U2b，而該貫孔211既 係與該第二模具32b上所設置之該進料孔33b相對應且呈 鉚釘狀並與該承載座21b之該凹階2113b内相連通，使該 絕緣材料24藉由該射出裝置4並透過該進料孔3北射出 鲁 注入於該第二模穴321b之時，令該絕緣材料24經由該貫 孔21112b流至該承載座21b之該凹階2113b與該第一模 穴311b内，藉以將該影像感測晶片22之該非作動面222 加以包覆以及該承載座21b之該凹階2113b與該影像感測 晶片22間之空隙予以充填，並同時將該貫孔2U12b予以 填滿。 換句話說’由於該影像感測晶片封裝結構2b之該貫 孔21112b内係分別由一大小不同之内徑所連通構成，因 12 201142996 此，於該貫孔21112b内呈鉚釘狀貫穿於該中空框架21比 之該第一表面2111b以及該凹階2U3b之間，並與該封裝 模具3b之該第-歡遍相魏，使縣影像感測晶^ 封聚結構2b於舰賴料24之封裝製財，該絕緣材料 Μ可分別經由該貫孔21U2b中灌入於^^影像感測晶片22 與該凹階2113b之間隙中，進而注入於該第一模穴⑽ 内’使該影像感測晶片22之該非作動面222上包覆一層 該絕緣材料24，並同時將該絕緣㈣24觀於該影像感 測晶片22與該凹階2113b之間隙中，該絕緣材料24藉由 該貫孔21112b所凝固成之部分有如鉚釘般緊密的卡固於 該承載座21b之上，使位於該影像感測晶片22之該非作 動面222上所包覆的該絕緣材料24不易脫落。 此外’該封裝模具3b更包括：一内流道34b以及一 總進料口 35b ;其中，該内流道34b係可分別連通位於該 第一模具31b或該第二模具32b内之所有進料孔现，並 透過該總進料口 35b進行該内流道34b與該封裝模具3b 外界之連if ’以&供該射丨裝置4經由該總進料口 流至該内流道34b並針對該封裝模具3b内之該第一模穴 311b或該第二模穴321b透過該進料孔33b同步進行該絕 緣材料24之充填’藉此達到完成該影像感測晶片封裝結 構2b之封裝製程。 請參閱圖十A、圖十B所示，其中，本發明影像感 測晶片封裝結構第四較佳實施例與上述圖二第一較佳實 施例之影像_帛>{職結構不_在於，鄉像感測晶 片封裝結構之該賴座21e亦可岐細—多層板結 13 201142996 構之印刷電路板（Printed circuit board，PCB)所製成。 並且，於本實施例中，該電性連通結構也就是位於該承載 座21c (也就疋多層印刷電路板）内所包含的複數層之印 刷電路210。利用該印刷電路板多層化的配線形成之電路 迴路技術’以提供該印刷電路210位於該凹階2113c内之 複數個接點214c分別與該承載座21c第二表面之外週緣 所裸露的複數個接點214c，電性導通，進一步將位於該凹 階2113c内之該印刷電路210複數個接點214c與該影像 感測晶片22上之複數個導電端224利用一導電材料6分 別做電性連接。 承上述’該印刷電路210位於該凹階2113c内之複數 個接點214c以及位於承載座21c外週緣之另一端接點 214c’並不限制其數量及位置，亦配合該影像感測晶片22 上之複數個導電端224之數量及位置進行電路佈局設 計，同時亦達到防止EMI (電磁干擾)之標準。 請參閱圖十一所示，本發明影像感測晶片封裝結構第 五較佳實施例與上述圖四第一較佳實施例之影像感測晶 片封裝結構不同點在於，該影像感測晶片封裝結構2d之 於該承載座21d之該凹階2113d上設置有突出之一分隔端 2U31d，而該分隔端21131d係環設於該鏤空處211糾週 緣，用以將該凹階2113d内所填充之該絕緣材料24與該 影像感測晶片22上之該影像感測區223進行區隔，藉以 達到於封裝製鱗防止舰緣洲 24渗人於該透明蓋板 23下方’進一步避免產生污染該影像感測區223之現象， 更能提高與確保該封裝製程之良率。 201142996 綜上所述，本發明影像感測晶片封裝結構2，其中， 運用覆晶封裝技術將該影像感測晶片22之該作動面221 鑲崁於該承載座21内所設置之該凹階2113上，使該影像 感測晶片22上之覆數個導電端224與彎折延伸至該凹階 2U3内之該電性連通結構一端上的複數接點做電性連 接，並且在該影像感測晶片22之該非作動面222上填入 -絕緣材料24並予以雌，進—步湘舰緣材料24 將該承載座21之該凹階2113與該影像感測晶片22之間 隙予以填滿，使其具有防止靜電、電磁干擾以及保護晶片 與防漏光之功效，更達到降低整體封裝結構高度之目的。 以上所述係利用較佳實施例詳細說明本發明，而非限 制本發明之範圍。大凡熟知此類技藝人士皆_瞭，適當 而作些微的改變及，健不失本㈣之要義所在，: 不脫離本發明之精神和範圍。 【圖式簡單說明】 圖一係為習用影像感測晶片封裝結構示意圖。 圖二係為本發明影像感測晶片封裝結構第一較佳實 施例之立體分解示意圖。 圖三係為本發明影像感測晶片封装結構第一較佳實 施例之立體組合示意圖。 圖四係為本發明影像感測晶片封裝結構第一較佳實 施例之A-A剖面示意圖。 圖四A係為本發明影像感測晶片封裝結構第一較佳 實施例之玻璃蓋板另一組裝示意圖。 15 201142996 圖五係為本發明影像_⑼封裝結構第—較佳實 施例之剖面分解示意圖。 圖六^、圖六B係為本發明影像感測晶片封裝結構 -較佳實施例之封裝模具剖面分解與組合示赛圖。 圖七圖七B係為本發明影像制⑼封裝結構 -較佳貫_之封裝模具剖面分解與組合示意圖。 圖八係為本發明影像感測晶片封裝結構第二較佳餘 施例與鏡頭模組之結合示意圖。 只 圖九A、圖九B係分別為本發明影像感測晶片封事 結構第三較佳實_之封絲具麻分解與組合示意^ 圖十A、圖十B係分別為本發明影像感測晶片封裝 結構第四較佳實施例之承健立體圖與剖面示意圖。、 圖十一係分別為本發明影像感測晶片封裝結構苐 較佳實施例之剖面示意圖。 【主要元件符號說明】 1〜習用之影像感測晶片封裝結構 11〜影像感測晶片 12' 〜基板 13〜金屬線 8- /錫球 9〜鏡頭模組 91' 〜凹槽 92〜玻璃蓋板 93' 〜鏡片 2、2a、2b、2c、2d〜影像感測晶片封裝結構 21、21a、21b、21d〜承载座 21c〜印刷電路板 210〜印刷電路 214c〜接點 214c，〜接點 201142996 211、211a、211b〜中空框架 21Π、2111a、2111b 〜第一表面 21111a〜凸出部 21112b〜貫孔 2112〜第二表面 2113、 2113b、2113c、2113d〜凹階 2113M〜分隔端 2114、 2114d〜鏤空處 212〜金屬導腳 22〜影像感測晶片 221〜作動面201142996 VI. Description of the Invention: [Technical Fields of the Invention] A type of image sensing chip package structure, in particular, a plurality of electrically connected structures in which an image sensing wafer is embedded in a carrier by a sun-filled package technology Electrical connection, two = = concave and the gap between the image sensing wafer is filled and coated to effectively reduce the efficiency and thinness of the image sensing chip package structure. [Prior Art] The ever-changing technology of science and technology (four) is the advancement of electronic products, and the various components of electronic products are moving toward the goal of being light and thin. How to make the product more humanized and multi-machine integrated concept, the size is reduced and the carrying is convenient to meet the needs of people f engineering, more in line with (four) the convenience of the pursuit of fashion _ waiting and demand, is one of the main development issues of the electronic production market. Combining the mobile phone with the digital camera function or even the hallmark (4) brain, or combining the PAD with the digital camera function is an important improvement breakthrough of the towel. How to make it thinner and lighter, the manufacturing process is simpler and easier to assemble. It will also be the main goal of the development of the industry. - Please refer to Figure 1, which is a conventional image sensing chip package structure. The conventional image sensing chip package structure 1 is coupled to a lens module 9 and includes an image sensing wafer 11, a substrate 12, and a plurality of metal lines 13. The image sensing wafer 11 is disposed on the substrate 12, and the image sensing wafer 11 is electrically connected to the substrate 12 by the plurality of metal lines 13. A plurality of recesses 91 under the lens module 9 cover and surround the image sensing wafer U and are disposed on the substrate 12 201142996 to protect the image sensing wafer 11 and the plurality of metal wires that are electrically connected to the substrate 12 13. The groove 91 corresponding to the upper surface of the image sensing chip u is disposed on the cover plate 92, so that the image forming film u passes through the glass cover plate 92 and passes through the preset in the lens module 9. A lens group 93 operates an external image, and a plurality of solder balls 8 that are omitted from the substrate 12 are connected to one of the other electronic components. However, in the conventional image sensing chip package, the image sensing wafer 11 needs to electrically connect the image sensing chip and the substrate 12 by means of the metal wire 13, and the image processing group 9 It is difficult to position the image sensing chip package structure i at a fixed position, and the assembly is complicated, and the need for further thinning cannot be further achieved. SUMMARY OF THE INVENTION A first object of the present invention is to provide a wafer package structure using a hollow and stepped carrier that can be placed in an empty space by an image sensing wafer. The recessed step is electrically connected to the plurality of interconnecting structures on the carrier to achieve the purpose of lowering the height of the image-package structure. Another object of the present invention is to provide a chip package structure, which is formed by forming a embossed portion on the image sensing wafer by means of a mold forming method. The image senses the structure of the W County, reducing the error and making the city more convenient and quick. A further object of the present invention is to provide an image-forming chip package structure, which is encapsulated in the recessed step of the stand 201142996, so that the package is rich in other electromagnetic or static interference. And the purpose of preventing light leakage. For the above purposes, the present invention provides an image sensing chip package, a structure including: a carrier, an image sensing wafer, a transparent cover, and an insulating (four). The county-loaded wire includes: a towel having a predetermined thickness, which is entangled with a single-connected structure. The middle frame has a -first surface and a second surface, and the inner edge of the hollow frame of the carrier is stepped and tapered from the second surface toward the first surface. On the concave _ and the outer circumference of the bearing seat, a plurality of health points are provided. (4) The remaining electrical connection structures electrically connect the plurality of contacts in the concave step and the outer circumference of the bearing seat. The image sensing wafer includes: an actuating surface and a non-actuating surface. The actuating surface can be embedded in the concave step of the bearing block, so that the image is formed on the moving surface, and the image forming area is exposed in the hollow of the first surface of the bearing seat. A conductive material electrically connects the plurality of electrical terminals of the image forming compartment to the plurality of electrically connected structures. Further, the insulator (4) is used as the secret of the image in the concave step. The structure is not affected by other electromagnetic or static electricity and achieves the effect of preventing light leakage. The transparent cover covers the center of the first surface of the carrier and the periphery of the transparent cover can be fixed to the carrier by an adhesive. The other part of the electrical connection structure on the outer circumference of the second surface of the carrier can be soldered to the base, which saves manufacturing costs and makes it lighter and shorter. 201142996 [Embodiment] In order to more clearly describe the image sensing wafer sealing structure proposed by the present invention, the following will be described in detail with reference to the drawings. Referring to FIG. 2, FIG. 3 and FIG. 4, the image sensing chip package structure 2 of the first preferred embodiment of the present invention comprises: a carrier 21, an image sensing chip 22, and a transparent cover. The plate 23 _ and the insulating material 24 are combined. The carrier 21 includes a hollow frame 211 and a plurality of electrical communication structures. The electrical communication structure in the first preferred embodiment of the present invention is a plurality of metal guide legs 212. The hollow frame 211 further includes a first surface 21U, a second surface 2112, a concave step 2113, and a hollow portion 2114. The image sensing wafer 22 includes an active surface 221, a non-actuating surface 222, an image sensing region 223, and a plurality of conductive ends 224. The carrier 21 can be formed by injection molding or ejection on a lead frame to expose the hollow frame 211 and the metal lead 212 of the lead frame (that is, the first embodiment of the electrical connection structure). The combination 'and the hollow frame 211 has a predetermined thickness. A stepped shape is formed at a central inner edge of the hollow frame 211, and a second step 2112 of the carrier 21 is stepped toward the first surface 2111 to form a concave step 2113. Moreover, the opening area enclosed by the concave step 2113 substantially corresponds to the operating surface 221 of the image sensing wafer 22. The material of the carrier 21 may be one of a glass cloth based epoxy resin (pR_4, FR-5), a polyimide resin (PI), a BT resin, a polyphenylene resin (pP0), and a ceramic substrate. 201142996 The image sensing chip 22 is used for capturing external images, usually a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS) image sensing device. The plurality of metal guiding legs 212 are in a planar strip shape and are substantially in a radial shape and are embedded in the thickness of the outer edge of the hollow frame 211 and are bent and attached to the first surface 2112 for further bending. Extending and embedded on the concave step 2113. The metal lead 212 can be formed by stamping or etching a metal foil, and the metal lead 212 can be one of copper, aluminum, alloy, or other conductive metal material. One end of the plurality of metal guiding pins 212 is bent and embedded in the concave step 2113 of the carrier 21 to serve as a plurality of contacts electrically connected to the image sensing chip 22; and the plurality of metal guiding pins 212 are further- The end is bent to be embedded in a peripheral portion of the second surface 2112 of the carrier 21 to provide a plurality of contacts electrically connected to other electronic components. The concave step 2113 forms a suitable height difference with the second surface 2112, so that the image thin (9) 22 cover is embedded in the concave step 2113, and the active surface 221 of the image sensing wafer 22 is not only made. The plurality of conductive ends 224 on the recessed step 2113 are respectively formed on the end of the metal guide pin 212 bent in the recessed step 2113 and electrically connected by a conductive material 6 Connecting, thereby reducing the risk of short circuit when bridging. The conductive end 224 may be surrounded by the image sensing area 223. At the same time, the image sensing area 223 surrounded by the conductive end 224 may be exposed to the The center of the first surface 2111 of the carrier 21, that is, 201142996, the image sensing area 223 is exposed in the center of the hollow frame 2i. The conductive material 6 may be conductive glue, solder or soldered with a solder ball. Figure 5 is a combination of Figure 4, wherein the vertical depth h of the concave step 2113 of the carrier 21 is defined by the thickness of the scale image sensing wafer 22. The hollow frame 211 of the carrier 21 is used. Forming the stepped shape of the concave step 2113 'to cover the crystal The mounting technique can easily smother the active surface 221 of the smd image sensing chip 22 into the concave step 2113 of the carrier 21. The image sensing region 223 of the shadowing wafer 22 corresponds to the hollow frame. The hollow portion 2114 of the center of the 211 is filled over the non-actuating surface 222 of the image sensing wafer 22, and the insulating material 24 is filled and packaged to further coat the non-actuating surface 222 of the image sensing wafer 22. The gap between the concave step 2113 of the carrier 21 and the image sensing crystal 22 is also filled with the insulating material 24. Since the insulating material 24 can provide a barrier effect, the electromagnetic protection can be further achieved. The effect of the interference (ΕΜΙ) can be simultaneously protected by the interference of the image sensing chip 22 in the carrier 21. The transparent cover 23 covers the active surface 221 of the image sensing wafer 22 And being embedded in the hollow portion 2114 of the first surface 2ιη of the hollow frame 211, and coating an adhesive 7' on the periphery of the transparent cover 23 to fix the transparent cover 23 to the carrier 21 of the hollowing out 211 4, the image sensing area 223 for protecting the image sensing chip 22 is not contaminated by external dust particles. The transparent cover 23 may be infrared filter glass, plain glass, anti-reflective glass and blue glass. I. 201142996 Please refer to FIG. 4A, which is another assembly diagram of the glass cover of the first preferred embodiment of the image sensing chip package structure of the present invention, wherein the glass cover 23 of FIG. 4 is combined with different manners. The transparent cover 23 is slightly larger than the hollow portion 2114 and is bonded to and fixed to the first surface 2U1 of the carrier 21 through the adhesive 7 . Referring to FIG. 6A and FIG. 6B, the packaging process of the image sensing chip package structure 2 further includes a package mold 3, the package mold 3 includes: a first mold 31 and a second Mold 32. The first and second molds 31, 32 respectively include a first cavity 311 and a second cavity 321 . The image sensing chip 22 and the carrier 21 are enclosed in the first and second cavity 3 32, and at least one feeding hole 33 is disposed on the packaging die 3, and at least one injection device 4 is used. (Injection molding machine) is poured into the feed hole 33 and further injected into the package mold 3, that is, the insulating material 24 is filled into the first and second mold holes 31, 32. . That is, the image sensing chip package structure 2 is quickly and precisely packaged and mass-produced by the package mold 3 and the injection device 4 by injection molding. The image is sensed from the unpackaged semi-finished product of the chip package structure 2 into the first cavity 311 and the second cavity 321 of the package mold 3 to pass through the feed hole 33 on the first mold 31. The insulating material 24 is injected into the non-operating surface 222 of the image sensing wafer 22 via the first cavity 311, and the concave step 2113 of the carrier 21 and the image sensing crystal are further controlled. _filling, when the insulating material 24 is solidified, the first and second molds 31 32 of the mold 3 are subjected to the stripping process of the image sensing package structure 2, by 201142996 to complete the The package process of the image sensing chip package structure 2. In the other preferred embodiments of the present invention described below, since most of the components are the same or similar to the foregoing embodiments, the same components and structures will not be described below. And the same components will be given the same name and number directly, and the same name will be given for similar components, but an additional letter will be added after the original number to distinguish them and will not be described in detail. Please refer to Figure 7A. Figure 7B, this The first preferred embodiment of the image sensing chip package structure and the image sensing chip package structure and the package mold of the first preferred embodiment of FIG. 6 a and FIG. 6 b are different in that the image sensing chip package structure The second mold 32a of the second mold 32a further has the feed hole 33a'. The feed hole 33a of the package mold 3a passes through the second mold hole 321a, and is disposed in the second mold cavity 321a. When the insulating material 24 is injected into the second cavity 321a through the feeding hole 33a provided on the second die 32a by the injection device 4, the insulating material 24 is poured into the insulating material 24 Within the mountain of the groove 32, a convex portion 21U1a is formed on the first surface 2111a of the hollow frame 2Ua of the bearing seat 21a, and the insulating material 24 solidified in the groove a is also the convex portion. The output portion 2 inia surrounds the transparent cover of the transparent cover on the first surface 2111 a. As shown in FIG. 8 , the image measuring chip package structure 2 a on the second solid side of the mailing address utilizes the second cavity 321 . The groove 32 is injected into the insulating material 24, and the carrier is further The protrusion 2iiua having a predetermined height is formed on the first surface 2111a, so that the head module 5 is combined with the bribe (9). The carrier structure 21a of the city structure is 21a ^L ° 201142996, that is, 'below the lens module 5 When the first surface 2111a of the hollow frame 211a is disposed on the first surface 2111a of the hollow frame 211a, the protruding portion 21111a formed by the first surface and the bonding end 51 of the lens module 5 are positioned and engaged. The axis position of the lens group 52 is set to be exactly the same as the center of the image sensing area 223 of the image sensing chip 22, so as to provide the image sensing chip package structure 2a quickly. And accurately positioning the person with the lens module 5, and at the same time reducing the overall height of the image sensing chip package structure 2a and the module 5 combination. </ RTI> Referring to FIG. 9A and FIG. 9B, the image sensing chip package structure of the present invention is difficult to implement and the image sensing chip package structure and package of the second preferred embodiment of FIG. The mold is different from the 'the scene'. The first surface 2111b of the carrier 21b of the sensing chip package structure 2b is provided with at least a consistent hole 21U2b, and the through hole 211 is connected to the second mold 32b. The feeding hole 33b is disposed correspondingly and has a rivet shape and communicates with the concave step 2113b of the bearing seat 21b, so that the insulating material 24 is ejected through the injection device 4 and through the feeding hole 3 When the second cavity 321b is injected, the insulating material 24 flows through the through hole 21112b to the concave step 2113b of the carrier 21b and the first cavity 311b, thereby the image sensing wafer 22 is The non-operating surface 222 is covered and the gap between the concave step 2113b of the carrier 21b and the image sensing wafer 22 is filled, and the through hole 2U12b is simultaneously filled. In other words, because the inner hole 21112b of the image sensing chip package structure 2b is connected by an inner diameter of a different size, as shown in FIG. 12 201142996, the through hole 21112b is rivet-likely penetrated in the hollow. The frame 21 is disposed between the first surface 2111b and the concave step 2U3b, and the first and the other parts of the package mold 3b, so that the county image sensing crystal sealing structure 2b is packaged in the ship's material 24 The insulating material Μ can be poured into the gap between the image sensing wafer 22 and the concave step 2113b through the through hole 21U2b, and then injected into the first cavity (10) to enable the image sensing. The non-actuating surface 222 of the wafer 22 is covered with a layer of the insulating material 24, and at the same time, the insulating (four) 24 is viewed in the gap between the image sensing wafer 22 and the concave step 2113b. The insulating material 24 is covered by the through hole 21112b. The solidified portion is fastened to the carrier 21b as rivet-like, so that the insulating material 24 coated on the non-operating surface 222 of the image sensing wafer 22 is not easily peeled off. In addition, the package mold 3b further includes an inner flow channel 34b and a total feed port 35b; wherein the inner flow channel 34b can respectively communicate all the feeds located in the first mold 31b or the second mold 32b. a hole is formed, and the inner flow passage 34b is connected to the outside of the package mold 3b through the total feed port 35b, and the injection device 4 flows to the inner flow passage 34b via the total feed port. The first cavity 311b or the second cavity 321b in the package mold 3b is synchronously filled with the insulating material 24 through the feed hole 33b, thereby completing the packaging process of the image sensing chip package structure 2b. . Referring to FIG. 10A and FIG. 10B, the fourth preferred embodiment of the image sensing chip package structure of the present invention and the image of the first preferred embodiment of FIG. 2 are not shown in FIG. The stand-up 21e of the home-like sensing chip package structure can also be made of a printed circuit board (PCB) of the multilayered junction 13 201142996. Further, in the present embodiment, the electrical communication structure is the plurality of printed circuits 210 included in the carrier 21c (i.e., the multilayer printed circuit board). a circuit circuit technology for forming a multilayered wiring of the printed circuit board to provide a plurality of contacts 214c of the printed circuit 210 located in the concave step 2113c and a plurality of exposed peripheral edges of the second surface of the carrier 21c The contact point 214c is electrically connected to further electrically connect the plurality of contacts 214c of the printed circuit 210 and the plurality of conductive ends 224 of the image sensing die 22 in the recessed step 2113c by using a conductive material 6 respectively. . The plurality of contacts 214c of the printed circuit 210 located in the concave step 2113c and the other end contact 214c' located at the outer periphery of the carrier 21c are not limited in number and position, and are also matched with the image sensing chip 22 The number and position of the plurality of conductive ends 224 are designed for circuit layout, and the standard for preventing EMI (electromagnetic interference) is also achieved. Referring to FIG. 11 , the fifth preferred embodiment of the image sensing chip package structure of the present invention is different from the image sensing chip package structure of the first preferred embodiment of FIG. 4 in that the image sensing chip package structure is different. 2d, the recessed step 2113d of the carrier 21d is provided with a protruding end 2U31d, and the dividing end 21131d is looped at the hollow 211 to correct the circumference of the recess 2113d. The insulating material 24 is separated from the image sensing area 223 on the image sensing wafer 22, so as to achieve the sealing of the package to prevent the ship edge 24 from infiltrating the transparent cover 23 to further avoid contamination. The phenomenon of the measurement area 223 can further improve and ensure the yield of the packaging process. In view of the above, the image sensing chip package structure 2 of the present invention, wherein the operating surface 221 of the image sensing wafer 22 is embedded in the concave step 2113 disposed in the carrier 21 by using a flip chip packaging technique. The plurality of conductive ends 224 on the image sensing wafer 22 are electrically connected to the plurality of contacts on the one end of the electrical connecting structure that is bent and extended into the concave step 2U3, and the image sensing is performed on the image. The non-actuating surface 222 of the wafer 22 is filled with an insulating material 24 and is filled with a female, and the inlet of the concave step 2113 of the carrier 21 and the image sensing wafer 22 is filled. The utility model has the functions of preventing static electricity, electromagnetic interference, protecting the wafer and preventing light leakage, and further reducing the height of the overall package structure. The above description of the present invention is intended to be illustrative of the preferred embodiments of the invention. Anyone who is familiar with such a skilled person is _, appropriate and slightly changed, and the essence of this (4) is:, without departing from the spirit and scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic diagram of a conventional image sensing chip package structure. 2 is a perspective exploded view of a first preferred embodiment of the image sensing chip package structure of the present invention. Figure 3 is a perspective view of a first preferred embodiment of the image sensing chip package structure of the present invention. Figure 4 is a cross-sectional view of the first preferred embodiment of the image sensing chip package structure of the present invention taken along the line A-A. FIG. 4A is another assembly diagram of the glass cover of the first preferred embodiment of the image sensing chip package structure of the present invention. 15 201142996 Figure 5 is a cross-sectional exploded view of the preferred embodiment of the image_(9) package structure of the present invention. FIG. 6 and FIG. 6B are diagrams showing the decomposition and combination of the package mold of the image sensing chip package structure of the present invention. Figure 7 Figure 7B is a schematic diagram of the decomposition and combination of the package mold of the image forming system (9) package structure of the present invention. FIG. 8 is a schematic view showing the combination of the second preferred embodiment of the image sensing chip package structure and the lens module of the present invention. FIG. 9A and FIG. 9B are respectively the third preferred embodiment of the image sensing wafer sealing structure of the present invention. A perspective view and a cross-sectional view of a fourth preferred embodiment of the chip package structure are shown. Figure 11 is a cross-sectional view showing a preferred embodiment of the image sensing chip package structure of the present invention. [Main component symbol description] 1~ conventional image sensing chip package structure 11 to image sensing wafer 12'~substrate 13~metal wire 8-/tin ball 9~lens module 91'~groove 92~glass cover 93' ~ lens 2, 2a, 2b, 2c, 2d ~ image sensing chip package structure 21, 21a, 21b, 21d ~ carrier 21c ~ printed circuit board 210 ~ printed circuit 214c ~ contact 214c, ~ contact 201142996 211 211a, 211b~ hollow frame 21Π, 2111a, 2111b to first surface 21111a to protrusion 21112b to through hole 2112 to second surface 2113, 2113b, 2113c, 2113d to concave step 2113M to separation end 2114, 2114d to hollow 212~metal lead 22~image sensing wafer 221~acting surface
223〜影像感測區 23〜透明蓋板 33、33a、33b~ 進料孔 35b〜總進料口 5〜鏡頭模組 52〜鏡片組 7〜黏合劑 222〜非作動面 224〜導電端 24~絕緣材料 3、3a、3b〜封裝模具 31、 31a、31b〜第一模具 311、311a、311b〜第一模穴223~image sensing area 23~transparent cover 33,33a,33b~feed hole 35b~total feed port 5~lens module 52~lens group 7~adhesive 222~non-actuating surface 224~conductive end 24~ Insulating material 3, 3a, 3b~ package mold 31, 31a, 31b ~ first mold 311, 311a, 311b ~ first cavity
32、 32a、32b〜第二模具 321、321a、321b〜第二模穴 3211a〜凹槽 34b〜内流道 4〜射出裝置 51〜結合端 6〜導電材料 10〜電路板 1732, 32a, 32b to second molds 321, 321a, 321b to second mold holes 3211a to grooves 34b to inner flow paths 4 to injection devices 51 to joint ends 6 to conductive materials 10 to circuit boards 17