201126008 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及-種奈来碳管陣列之製備裝置及製備方法。 [先前技術]1 [0002] ❹ 〇 奈米碳管係一種新型之-維奈米材料，其具有優良之綜 合力學性能，如尚彈性模量、高楊氏模量和低密度，以 及優異之電學性能、熱學性能和吸附性能◊隨著奈米碳 管碳原子排列方式之變化，奈米碳管可呈現出金屬性或 半導體性質。由於奈米碳管之優異特性，故可望其於奈 米電子學、材料科學、生物學、化學等領域中發揮重要 作用，而奈米碳管陣列因其中之奈米碳管排列整齊有序 ，使其更有利於工業應用。形成奈米碳管陣列之方法主 要係化學氣相沈積法（CVD)。化學氣相沈積法主要係運用 奈米尺度之過渡金屬或其氧化物作為催化劑，於一定溫 度下熱解碳源氣體來製備奈米碳管陣列。目前化學氣相 沈積法一般選用平面型之生長基底，而該平面型之生長 基底由於受反應室尺寸之限制，其面積無法做到很大， 從而使得生長於其上之奈米碳管陣列面積也無法做到很 大。 [0003] 范守善等人於2008年1月1日公開之第200801 224號台灣 發明專利申請公佈說明書中揭示了一種大面積生長奈米 碳管膜之方法。該方法具體為提供一筒狀基底，並於該 基底之外表面上沈積一催化劑層；將該沈積有催化劑層 之基底放置於一反應室内；向該反應室内通入保護氣體 ，使該反應室保持一預定氣壓；加熱反應室至一預定溫 099102177 表單編號A0101 第3頁/共18頁 0992004196-0 201126008 [0004] [0005] [0006] 099102177 度；向反應室内通入碳源氣#，一預定時間後，於基底 上得到一層奈米碳管膜。該專利申請採用筒狀基底作為 奈米碳管膜生長之載體，使得一定容量空間之反應室内 可容納更大面積之基底，從而實現奈米碳管膜於較小反 應室内之大面積生長。 然，上述製備方法通過加熱反應室之方式加熱基底，當 於筒狀基底之外表面生長奈米碳管時，基底表面形成奈 米碳管膜後，熱量將通過該奈米碳管膜傳遞到所述基底 表面，由於奈米碳管將會吸收一部分熱量，使得加熱基 底上催化劑之時間變長，從而使得熱解碳源氣之速度減 慢，最終使得生長奈米碳管之速度減慢。隨著奈米碳管 生長高度之增加，這一現象將變得尤為明顯。 【發明内容】 有鑒於此，提供一種基底之加熱速度較快、進而使奈米 碳管之生長速度較快之奈米碳管陣列之製備方法及製備 ;：：； Γ 裝置實為必要。 一種奈米碳管陣列之製備方法，其包括以下步驟：提供 一筒狀基底’該筒狀基底具有一平滑之外表面，該外表 面沈積有一催化劑層；提供一反應室，將該沈積有催化 劑層之筒狀基底設置於該反應室内；提供一加熱裝置， 使該加熱裝置設置於該筒狀基底之内部，並將所述反應 室内之空氣排出’之後，採用該加熱裝置加熱該筒狀基 底至一預定溫度；向該反應室内通入破源氣體，從而於 該筒狀基底上生長獲得一奈米碳管陣列。 一種奈米碳管陣列之製備方法，其包括以下步驟：提供 表單編號A0101 第4頁/共18頁 0992004196-0 [0007] 201126008 一外表面具催化劑層之筒狀基底，將其設置於一通有保 護氣體之反應室内；提供一加熱裝置，將其設置於上述 筒狀基底内部，並將該反應室内之空氣排出，之後，採 用該如熱裝置加熱該筒狀基底至一預定溫度；以及向該 反應室内通入一預定分壓之碳源氣，從而於該筒狀基底 外表面生長一奈米碳管陣列。 [0008] Ο ' [0009] G [0010] [0011] 一種奈米碳管陣列之製備裝置，其包括：一反應室，該 反應室包括一進氣口和一出氣口；一設置於該反應室内 之—筒狀基底；其中，該奈米碳管陣列之製備裝置進一 步包括一設置於該筒狀基底内部之一加熱裝置。 相較於先前技術，本發明直接將加熱裝置設置於所述筒 狀基底之通孔内部，使所述加熱裝置與所生長獲得之奈 米碳管陣列分別置於所述筒狀基底之兩侧，從而使該加 熱裝置所傳導之熱量不易被所生長之奈米碳管或其他介 質所吸收且可充分被所述基底所吸收。故，該方法可使 所述基底之加熱速度加快，並進一步使奈米碳管之生長 速度加快。 【實施方式】 以下將結合附圖詳細說明本發明實施例提供之奈米破管 陣列之製備方法及製備裝置。 請參閱圖1，圖2及圖3，本發明實施例提供一種奈米碳管 陣列之製備方法，其包括以下步驟： 步驟一：提供一筒狀基底10，該筒狀基底10具有，外表 面12。 099102177 表單編號A0101 第5頁/共18頁 0992004196-0 [0012] 201126008 [0013] 所述筒狀基底10為一中空柱體結構，該筒狀基底10具有 一通孔16，該通孔16之橫截面可為圓形、橢圓形、三角 形、四邊形，或者其他規則或不規則之多邊形，且該整 個筒狀基底10之橫截面也可為圓形、橢圓形、三角形、 四邊形，或者其他規則或不規則之多邊形。該筒狀基底 10之材料由耐高溫之材料製成，如石英、陶瓷、耐高溫 玻璃基底、矽或金屬材料。本實施例中，該筒狀基底10 和其通孔16之橫截面均為圓形，其材料為石英。為能獲 得一有序排列之奈米碳管陣列40，該筒狀基底10需具有 一平滑之外表面12，該平滑之外表面12可通過機械拋光 或電化學拋光等方法獲得。進一步地，請參閱圖3，該筒 狀基底10之筒壁上可進一步包括一開口 18，該開口 18之 具體形狀及大小不限，可根據實際需要而具體選定，優 選為，該開口 18之尺寸以能將該製備方法之後續步驟中 之加熱裝置置入所述筒狀基底10之通孔16内為宜。 [0014] 步驟二，於該筒狀基底10之外表面12形成一催化劑層14 〇 [0015] 所述催化劑層14之材料可選用鐵（Fe )、鈷（Co)、鎳 (Ni)或者該幾種金屬之氧化物，該催化劑層14可採用 熱沈積、電子束沈積、蒸鍍或磁控濺射等方法形成於上 述筒狀基底10之外表面12。該催化劑層14之厚度可根據 實際需要而具體設定，本實施例中，其厚度為1奈米至10 奈米即可。 [0016] 該步驟可進一步包括退火處理該催化劑層14，使得該催 化劑層14形成奈米級之催化劑顆粒。若催化劑為金屬， 099102177 表單編號A0101 第6頁/共18頁 0992004196-0 201126008 [0017] [0018] Ο ο [0019] 則於退火過程中伴隨著發生氡化反應，將金屬氧化成金 屬氧化物。該退火後得到之顆粒之大小將決定以後生長 奈米碳管之直徑大小。 步驟三：提供一反應室20，將該形成有催化劑層14之筒 狀基底10設置於該反應室20内。 所述反應室20包括分別設置於該反應室2〇兩端之一進氣 口 22及一出氣口 24。本實施例中，該反應室為一石英管 ，該進氣口 22及出氣口 24位於石英管沿輛向之兩端。該 步驟進一步包括提供一支撐體26並通過該支撐體Μ將所 述筒狀基底10固定於所述反應室20内。優選地，該筒狀 基底10沿該反應室20之轴線亨向放置，即該筒狀芙底i 〇 之通孔16之延伸方向沿該反應室20之轴線方向。該設置 方式可使得從進氣口22進人反應謂之反錢體被筒狀 基底10阻擋之量最少，從而避免降低奈米碳管之生長速 度。同時’由於該筒狀基底10之形狀為筒狀，相較於平 面狀之基底，該筒狀棊底10可有效利用該反應室之空間 ，使得其可容納更大面積之基底，從而可獲得更大面積 之奈米碳管陣列。 步驟四：提供一加熱裝置30，使該加熱裝置30設置於該 筒狀基底10之内部，並將所述反應室2〇内之空氣排出， 之後，採用該加熱裝置加熱該筒狀基底10至一預定溫度 [0020] 具體地，該加熱裝置30設置於該筒狀基底1〇之通孔16内 ，其具體設置方式以使該整個筒狀基底10均勻加熱為目 099102177 表單編號A0101 第"7頁/共18頁 0992004196-0 201126008 之，可依據整個筒狀基底10和通孔16之橫截面積而具體 設定。本實施例中，由於該筒狀基底10及其通孔16之橫 截面均為圓形，故該加熱裝置30設置於該筒狀基底10之 通孔16之中軸線處，從而可使整個筒狀基底1〇受熱均勻 。該加熱裝置30可通過所述筒狀基底1〇之通孔16之兩端 裝入該筒狀基底1〇内，也可通過所述筒狀基底1〇之開口 18處裝入。所述加熱裝置3〇可為電阻絲加熱管、紅外線 加熱燈管或矽鉬棒加熱器等。本實施例中，所述加熱裝 置30可為一紅外線石英加熱燈管，該紅外線加熱燈管之 兩端可通過一支架28夾持並固定於筒狀基底1〇内。具體 為，所述加熱裝置30可通過所述開口18裝入所述通孔16 内，並且該加熱裝置3〇的兩端可通過所述支架28固定。 另外，該加熱裝置3〇也可通過所述通孔16的一端插入所 述通孔16内，且該加熱裝置3〇的一端通過所述支架28固 定。 [0021] 將该加熱裝置30設置於該筒狀基尨1 〇内後，需將反應室 20内之空氣排出’以防止後續步驟中之碳源氣體與空氣 .. μ丨"- 發生反應，之後再採用該加熱裝置3〇加熱該筒狀基底1〇 至一預定溫度。 [0022] 排出空氣之方式可包括以下三種：直接將反應室抽真空 ;向反應室内通入保護氣體’通過該保護氣體將反應室 内之空氣排出；另外’該方式也可將反應室20抽真空之 後通入保護氣體，並使該保護氣體於該反應室2〇内保持 一預定之氣壓。本實施例中選擇了第三種方式。 [0023] 通入保護氣體之具體方式為：從上述進氣口 22向反應室 099102177 表單編號 Α0101 第 8 頁/共 18 頁 0992004196-0 201126008 20内通入保護氣體，該保護氣體可選用氬氣，也可為氮 氣或其他不與後續通入之碳源氣體發生反應之氣體。該 保護氣體之輸入可使反應室20内之空氣經由該出氣口 24 排出。優選地，該步驟於通入保護氣體之前先對該反應 室20抽真空處理。於所述保護氣體之環境下，採用上述 加熱裝置30將該筒狀基底10表面之催化劑層14加熱至奈 米碳管之生長溫度，即500°C〜800°C。 [0024] 步驟五：向該反應室20内通入一碳源氣，以生長奈米碳 管陣列40。 [0025] 所述碳源氣體為乙烯、甲烷、乙烷、乙炔或其他氣態烴 類。本實施例中，該碳源氣體為乙烯。反應時間為10分 鐘〜2個小時，從而於所述筒狀基底10之外表面12生長獲 得一奈米碳管陣列4 0 ^ [0026] 具體地，該碳源氣體和保護氣體以一預定體積比並以一 固定之流速從上述進氣口 22通入反應室20内，並同時將 該混合氣體以相同之流速從出氣口 24輸出反應室20，這 樣可保持碳源氣體於反應室20内處於流動狀態，反應室 ❹ 〇 20内參加反應之碳源氣體會得到及時之更新以使其濃度 基本維持不變，從而可得到高品質之奈米碳管陣列40。 該保護氣體與碳源氣體之體積比優選為1:0~1:10，該保 護氣體之流速和碳源氣體之流速依據反應室20之腔體之 具體尺寸而定，若反應室20之腔體直徑為4寸〜6寸時，保 護氣體之流速可為200 seem (Standard Cubic Centimeters Minute) 〜 500sccm ， 碳源氣體之流速可為 20sccm~60sccmo本實施例中，該反應室20之腔體之直 099102177 表單編號A0101 第9頁/共18頁 0992004196-0 201126008 流速 [0027] [0028] [0029] 徑為4寸，保護氣體之流速為360sccm ;碳源氣艨 為40 seem ° 進一步地，本實施例製備奈米碳管陣列40之方法中’ 述反應室20可直接由一加熱爐（圖未示）之腔艨構成 該加熱爐也可進一步與加熱裝置30同時加熱該反 ，從而使所述反應室20更快達到生長奈米碳管陣列4〇 反應溫度。 請參閱圖2及圖3，具體地，上述奈米碳管陣列之製横 方法中所採用之製備裝置包括：一反應室20，該反應$ 20包括一進氣口 22和一出氣口 24 ; —設置於該反應秦2 内之一筒狀基底10 ;及一設置於該筒狀基底10内部 加熱裝置30。此外’該製備裝置還進一步包栝· 撐該筒狀基底10之支撐體26，該筒狀基底1〇之 可進一步設置一開口 18。該製備裝置之具體結構於上述 實施例之製備方法中已經詳鈿描述，於此赞不再贅述。 於上述實施例之製備方法及叙備丨襄置中，由於所述加熱 裝置設置於所述筒埜基底之4妹，故於所述加熱裝置斑 所述筒型基底之間除所述保護氣體與碳源氣體之 他介質吸收該加熱裝置所產生之熱量，使得加熱生’、、、其 底之速度較快，從而使奈米碳管可具有更快之生 基 。另外，該方法可均勻加熱所述基底，且通過控制戶、度 加熱裝置就可直接控制所述基底之加熱速度和加執2述 ，使基底之溫度可控，進而可較好地控制奈米硬故^ 長速度。 之生 所 應室2〇 之 用於支 筒璧上還 099102177 表單編號A0101 第1〇頁/共18頁 〇992〇〇4196~〇 201126008 [0030] 綜上所述，本發明確已符合發明專利之要件，遂依法提 [0031] 出專利申請。惟，以上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之申請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之等效修飾或變化 ，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1係本發明實施例提供之奈米碳管陣列之製備方法流程 圖。 ❹ [0032] 圖2係本發明實施例提供之奈米碳管陣列之製備裝置示意 圖。 ' [0033] 圖3係本發明實施例提供之具有開口之筒狀基底剖視圖。 [0034] 【主要元件符號說明】 筒狀基底：10 [0035] 外表面：12 [0036] 催化劑層：14 〇 [0037] 通孔：16 [0038] 開口 ： 18 [0039] 反應室：20 [0040] 進氣口 ： 22 [0041] 出氣口 ： 24 [0042] 支撐體：26 [0043] 支架：28 099102177 表單編號A0101 第11頁/共18頁 0992004196-0 40 201126008 [0044] [0045] 加熱裝置：30 奈米碳管陣列： 099102177 表單編號A0101 第12頁/共18頁 0992004196-0201126008 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a preparation apparatus and a preparation method of a carbon nanotube array. [Prior Art] 1 [0002] ❹ 〇 Nano carbon tube is a new type of Venom material with excellent comprehensive mechanical properties such as elastic modulus, high Young's modulus and low density, and excellent Electrical Properties, Thermal Properties, and Adsorption Properties 奈 Carbon nanotubes can exhibit metallic or semiconducting properties as a function of the carbon nanotube arrangement of the carbon nanotubes. Due to the excellent properties of the carbon nanotubes, it is expected to play an important role in the fields of nanoelectronics, materials science, biology, and chemistry, and the carbon nanotube arrays are neatly arranged due to the arrangement of the carbon nanotubes. To make it more conducive to industrial applications. The method of forming a carbon nanotube array is mainly a chemical vapor deposition (CVD) process. The chemical vapor deposition method mainly uses a nanometer-scale transition metal or its oxide as a catalyst to pyrolyze a carbon source gas at a certain temperature to prepare a carbon nanotube array. At present, the chemical vapor deposition method generally uses a planar growth substrate, and the planar growth substrate is not limited by the size of the reaction chamber, so that the area of the carbon nanotube array grown thereon is increased. It can't be done very much. [0003] A method for growing a large-sized carbon nanotube film in a large area is disclosed in the publication of the Japanese Patent Application Publication No. 200801 224, issued Jan. 1, 2008. The method is specifically for providing a cylindrical substrate, and depositing a catalyst layer on the outer surface of the substrate; placing the substrate on which the catalyst layer is deposited in a reaction chamber; and introducing a shielding gas into the reaction chamber to make the reaction chamber Maintaining a predetermined pressure; heating the reaction chamber to a predetermined temperature 099102177 Form No. A0101 Page 3 / 18 pages 0992004196-0 201126008 [0004] [0005] [0006] 099102177 degrees; into the reaction chamber into the carbon source gas #, a After a predetermined time, a layer of carbon nanotube film is obtained on the substrate. The patent application uses a cylindrical substrate as a carrier for the growth of a carbon nanotube film, so that a reaction chamber of a certain volume space can accommodate a larger area of the substrate, thereby realizing a large area growth of the carbon nanotube film in a small reaction chamber. However, the above preparation method heats the substrate by heating the reaction chamber. When the carbon nanotube is grown on the surface of the cylindrical substrate, after the surface of the substrate forms a carbon nanotube film, heat is transferred to the carbon nanotube film through the carbon nanotube film. The surface of the substrate, because the carbon nanotubes will absorb a part of the heat, makes the time for heating the catalyst on the substrate longer, so that the speed of pyrolysis of the carbon source gas is slowed down, and finally the speed of growing the carbon nanotubes is slowed down. This phenomenon will become more apparent as the height of the carbon nanotubes grows. SUMMARY OF THE INVENTION In view of the above, a method and a preparation method for a carbon nanotube array having a faster heating speed of a substrate and a faster growth rate of a carbon nanotube are provided. A method for preparing a carbon nanotube array, comprising the steps of: providing a cylindrical substrate having a smooth outer surface, a catalyst layer deposited on the outer surface; providing a reaction chamber for depositing a catalyst a cylindrical substrate of the layer is disposed in the reaction chamber; a heating device is provided, the heating device is disposed inside the cylindrical substrate, and the air in the reaction chamber is discharged, and then the heating device is used to heat the cylindrical substrate Up to a predetermined temperature; a source gas is introduced into the reaction chamber to grow on the cylindrical substrate to obtain an array of carbon nanotubes. A method for preparing a carbon nanotube array, comprising the steps of: providing a form number A0101, page 4 / a total of 18 pages, 0992004196-0 [0007] 201126008 a cylindrical substrate having a catalyst layer on the outer surface, which is disposed in a protective manner a reaction chamber for gas; providing a heating device disposed inside the cylindrical substrate and discharging air in the reaction chamber, and then heating the cylindrical substrate to a predetermined temperature by using the heat device; and reacting to the reaction A carbon source gas of a predetermined partial pressure is introduced into the chamber to grow an array of carbon nanotubes on the outer surface of the cylindrical substrate. [0008] [0010] [0011] [0011] [0011] A carbon nanotube array preparation apparatus, comprising: a reaction chamber, the reaction chamber includes an air inlet and an air outlet; a reaction is set in the reaction The indoor-cylindrical substrate; wherein the carbon nanotube array preparation device further comprises a heating device disposed inside the cylindrical substrate. Compared with the prior art, the present invention directly places the heating device inside the through hole of the cylindrical substrate, so that the heating device and the grown carbon nanotube array are respectively placed on both sides of the cylindrical substrate. Therefore, the heat conducted by the heating device is not easily absorbed by the grown carbon nanotubes or other medium and can be sufficiently absorbed by the substrate. Therefore, the method can accelerate the heating rate of the substrate and further accelerate the growth rate of the carbon nanotubes. [Embodiment] Hereinafter, a method for preparing a nano tube breaking array and a preparation device according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. Referring to FIG. 1 , FIG. 2 and FIG. 3 , an embodiment of the present invention provides a method for preparing a carbon nanotube array, which includes the following steps: Step 1: providing a cylindrical substrate 10 having an outer surface 12. 099102177 Form No. A0101 Page 5 / Total 18 Pages 0992004196-0 [0012] [0013] The cylindrical substrate 10 is a hollow cylinder structure having a through hole 16 and a horizontal cross section of the through hole 16 The cross section may be a circle, an ellipse, a triangle, a quadrangle, or other regular or irregular polygons, and the cross section of the entire cylindrical substrate 10 may also be a circle, an ellipse, a triangle, a quadrangle, or other regular or not. The polygon of the rule. The material of the cylindrical substrate 10 is made of a material resistant to high temperatures such as quartz, ceramics, a high temperature resistant glass substrate, tantalum or a metal material. In this embodiment, the cylindrical substrate 10 and the through hole 16 have a circular cross section, and the material thereof is quartz. In order to obtain an ordered array of carbon nanotube arrays 40, the cylindrical substrate 10 is required to have a smooth outer surface 12 which can be obtained by mechanical polishing or electrochemical polishing. Further, referring to FIG. 3, the cylindrical wall of the cylindrical substrate 10 may further include an opening 18, and the specific shape and size of the opening 18 are not limited, and may be specifically selected according to actual needs, and preferably, the opening 18 The size is preferably such that the heating means in the subsequent step of the preparation method can be placed in the through hole 16 of the cylindrical substrate 10. [0014] Step 2, forming a catalyst layer 14 on the outer surface 12 of the cylindrical substrate 10. [0015] The material of the catalyst layer 14 may be iron (Fe), cobalt (Co), nickel (Ni) or the like. The oxide layer of the metal may be formed on the outer surface 12 of the cylindrical substrate 10 by thermal deposition, electron beam deposition, evaporation or magnetron sputtering. The thickness of the catalyst layer 14 can be specifically set according to actual needs. In the present embodiment, the thickness thereof is from 1 nm to 10 nm. [0016] This step may further include annealing the catalyst layer 14 such that the catalyst layer 14 forms nano-sized catalyst particles. If the catalyst is a metal, 099102177 Form No. A0101 Page 6 / 18 pages 0992004196-0 201126008 [0018] [0019] [0019] The oxidation process is accompanied by a deuteration reaction to oxidize the metal to a metal oxide. . The size of the particles obtained after the annealing will determine the diameter of the carbon nanotubes to be grown later. Step 3: A reaction chamber 20 is provided, and the cylindrical substrate 10 on which the catalyst layer 14 is formed is placed in the reaction chamber 20. The reaction chamber 20 includes an inlet port 22 and an outlet port 24 respectively disposed at two ends of the reaction chamber 2 . In this embodiment, the reaction chamber is a quartz tube, and the air inlet 22 and the air outlet 24 are located at both ends of the quartz tube. The step further includes providing a support 26 and securing the cylindrical substrate 10 within the reaction chamber 20 through the support. Preferably, the cylindrical substrate 10 is placed in the direction of the axis of the reaction chamber 20, i.e., the direction of the through hole 16 of the cylindrical cavity is along the axis of the reaction chamber 20. This arrangement is such that the reaction from the air inlet 22 causes the anti-money body to be blocked by the cylindrical substrate 10 to a minimum, thereby avoiding a reduction in the growth rate of the carbon nanotubes. At the same time, since the cylindrical substrate 10 has a cylindrical shape, the cylindrical dome 10 can effectively utilize the space of the reaction chamber so that it can accommodate a larger area of the substrate, thereby obtaining A larger area of carbon nanotube array. Step 4: providing a heating device 30, the heating device 30 is disposed inside the cylindrical substrate 10, and the air in the reaction chamber 2 is exhausted, and then the heating device is used to heat the cylindrical substrate 10 to A predetermined temperature [0020] Specifically, the heating device 30 is disposed in the through hole 16 of the cylindrical substrate 1 , and is specifically arranged to uniformly heat the entire cylindrical substrate 10 to the order 099102177. Form No. A0101 " 7 pages/18 pages 0992004196-0 201126008 can be specifically set according to the cross-sectional area of the entire cylindrical substrate 10 and the through hole 16. In this embodiment, since the cylindrical substrate 10 and the through hole 16 have a circular cross section, the heating device 30 is disposed at the axis of the through hole 16 of the cylindrical substrate 10, so that the entire cylinder can be The substrate 1 is uniformly heated. The heating device 30 can be inserted into the cylindrical substrate 1 through the both ends of the through hole 16 of the cylindrical substrate 1 or can be inserted through the opening 18 of the cylindrical substrate 1 . The heating device 3〇 may be a resistance wire heating tube, an infrared heating tube or a bismuth molybdenum rod heater or the like. In this embodiment, the heating device 30 can be an infrared quartz heating lamp tube. Both ends of the infrared heating lamp tube can be clamped and fixed in the cylindrical substrate 1 through a bracket 28. Specifically, the heating device 30 can be inserted into the through hole 16 through the opening 18, and both ends of the heating device 3 can be fixed by the bracket 28. Further, the heating device 3 can also be inserted into the through hole 16 through one end of the through hole 16, and one end of the heating device 3 is fixed by the bracket 28. [0021] After the heating device 30 is disposed in the cylindrical base, the air in the reaction chamber 20 needs to be discharged to prevent the reaction between the carbon source gas and the air in the subsequent step: μ丨" Then, the heating device 3 is used to heat the cylindrical substrate 1 to a predetermined temperature. [0022] The manner of discharging air may include the following three types: directly evacuating the reaction chamber; introducing a shielding gas into the reaction chamber to 'discharge the air in the reaction chamber through the shielding gas; and additionally, the reaction chamber 20 may be evacuated. Thereafter, a shielding gas is introduced and the shielding gas is maintained at a predetermined gas pressure in the reaction chamber 2A. The third mode is selected in this embodiment. [0023] The specific way of introducing the shielding gas is: from the above-mentioned air inlet 22 to the reaction chamber 099102177 Form No. 1010101, 8th page, 18th page, 0992004196-0 201126008 20, a protective gas is introduced, and the shielding gas can be selected from argon gas. It may also be nitrogen or other gas that does not react with the carbon source gas that is subsequently introduced. The input of the shielding gas allows the air in the reaction chamber 20 to be discharged through the gas outlet 24. Preferably, this step evacuates the reaction chamber 20 prior to passing the shielding gas. The catalyst layer 14 on the surface of the cylindrical substrate 10 is heated to a growth temperature of the carbon nanotubes by the above-described heating means 30 in the environment of the shielding gas, i.e., 500 ° C to 800 ° C. [0024] Step 5: A carbon source gas is introduced into the reaction chamber 20 to grow the carbon nanotube array 40. [0025] The carbon source gas is ethylene, methane, ethane, acetylene or other gaseous hydrocarbons. In this embodiment, the carbon source gas is ethylene. The reaction time is from 10 minutes to 2 hours, so that the outer surface 12 of the cylindrical substrate 10 is grown to obtain an array of carbon nanotubes. 4 0 ^ [0026] Specifically, the carbon source gas and the shielding gas are in a predetermined volume. And passing through the inlet port 22 into the reaction chamber 20 at a fixed flow rate, and simultaneously outputting the mixed gas from the gas outlet port 24 at the same flow rate, thereby maintaining the carbon source gas in the reaction chamber 20. In the flowing state, the carbon source gas participating in the reaction in the reaction chamber 〇 20 is updated in time to maintain the concentration substantially unchanged, so that the high quality carbon nanotube array 40 can be obtained. The volume ratio of the shielding gas to the carbon source gas is preferably 1:0 to 1:10, and the flow rate of the shielding gas and the flow rate of the carbon source gas depend on the specific size of the cavity of the reaction chamber 20, if the chamber of the reaction chamber 20 When the body diameter is 4 inches to 6 inches, the flow rate of the shielding gas may be 200 seem (Standard Cubic Centimeters Minute) ~ 500sccm, and the flow rate of the carbon source gas may be 20sccm~60sccmo. In the embodiment, the cavity of the reaction chamber 20 is Straight 099102177 Form No. A0101 Page 9 / Total 18 Page 0992004196-0 201126008 Flow Rate [0027] [0029] The diameter is 4 inches, the flow rate of the shielding gas is 360sccm; the carbon source gas is 40 seem ° Further, this In the method for preparing the carbon nanotube array 40, the reaction chamber 20 can be directly formed by a cavity of a heating furnace (not shown), and the heating furnace can be further heated simultaneously with the heating device 30, thereby The reaction chamber 20 reaches the growth temperature of the growth carbon nanotube array 4 times faster. Referring to FIG. 2 and FIG. 3, specifically, the preparation device used in the method for manufacturing the carbon nanotube array includes: a reaction chamber 20, and the reaction $20 includes an air inlet 22 and an air outlet 24; a cylindrical substrate 10 disposed in the reaction 2; and a heating device 30 disposed inside the cylindrical substrate 10. Further, the preparation apparatus further includes a support body 26 for supporting the cylindrical substrate 10, and the cylindrical substrate 1 is further provided with an opening 18. The specific structure of the preparation apparatus has been described in detail in the preparation method of the above embodiment, and will not be repeated here. In the preparation method and the arranging device of the above embodiment, since the heating device is disposed on the base of the tube field, the protective device is separated from the cylindrical substrate by the heating device. The other medium with the carbon source gas absorbs the heat generated by the heating device, so that the heating of the bottom, and the bottom of the heat is faster, so that the carbon nanotubes can have a faster life base. In addition, the method can uniformly heat the substrate, and the heating speed and the addition of the substrate can be directly controlled by the control household and the heating device, so that the temperature of the substrate can be controlled, thereby better controlling the nanometer. Hard so long speed. The life of the room should be used for the support of the urn. 099102177 Form No. A0101 Page 1 of 18 〇992〇〇4196~〇201126008 [0030] In summary, the present invention has indeed met the invention patent The requirements are as follows: [0031] Patent application. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing a method for preparing a carbon nanotube array according to an embodiment of the present invention. 2 is a schematic view of a preparation apparatus of a carbon nanotube array provided by an embodiment of the present invention. 3 is a cross-sectional view of a cylindrical base having an opening according to an embodiment of the present invention. [Description of main component symbols] Cylindrical substrate: 10 [0035] Outer surface: 12 [0036] Catalyst layer: 14 〇 [0037] Through hole: 16 [0038] Opening: 18 [0039] Reaction chamber: 20 [ 0040] Air inlet: 22 [0041] Air outlet: 24 [0042] Support: 26 [0043] Bracket: 28 099102177 Form No. A0101 Page 11 of 18 0992004196-0 40 201126008 [0044] [0045] Heating Device: 30 carbon nanotube array: 099102177 Form No. A0101 Page 12 / Total 18 Page 0992004196-0