201125167 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體封裝結構，特別是指一種 發光二極體的封裝結構及其製造方法。 【先前技術】 參閱圖1與圖2，以往的一種發光二極體的封裝結構i 包含一具有二個表面電極m、112的基座u、一分別電性201125167 VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor package structure, and more particularly to a package structure of a light-emitting diode and a method of fabricating the same. [Prior Art] Referring to FIG. 1 and FIG. 2, a conventional package structure i of a light-emitting diode includes a susceptor u having two surface electrodes m and 112, and a respective electrical property.
連接於該等電極、112的發光二極體晶片（LED Die) 12，及一由摻雜螢光粉（phosphor)的封膠製成且包覆該發 光二極體晶片12的膠層13，該膠層13是採射出成型 (injection molding)或轉移成型（transfer voiding)製成’其 中，該膠層13自頂面至該基座u的表面的厚度1為22〇微 米，但該發光二極體晶片12厚度就有1〇〇微米，加上該膠 層13的寬度約為該發光二極體晶片12的4〜8倍，依該發 光二極體晶片12的長、短軸方向而有不同，故該發光二極 體晶片12四周的膠層13較厚，而上方膠層13厚度較薄， 如此，封膠在射出成型、轉移成型該膠層13的過^中，會 因該發光二極體晶片12上方空間對比於四周空間太小，而 產生封膠在該發光二極體晶片12上方的流動性與四周流動 性不同，會讓封膠中摻雜的螢光粉因流動性不同產生不同 的沉澱分佈狀況’通常會造成螢光粉在該發光二極體晶月 12上方的分佈狀況較差。 此外，由於該膠層 厚度與四周厚度不同， 13在該發光二極體晶片12的上方 故該發光二極體晶片12各方向的發 201125167 出的光線在膠體13中的行進路徑長度不同，例如：向四周 發出的光線其行進路徑較長’螢光粉的相對分佈量也較^ ，故較有機會與螢光粉作用，而.產生較多的黃色光，相= 於向上方發出的光線因為行進路徑相對短很多，螢光粉相 對分佈量較少，所以較沒有機會與螢光粉作用，產生較少 的黃色光；參閱圖2,為單一顆該發光二極體以垂直發光面 的方向為0度’沿-長軸方向將各個角度的出光色座標值 (CIE)繪製成的一圖表’由圖可知色座標值分佈區域較廣 ，表示在不同角度的出光色座標差異較大，即各角度白光 的顏色不均勻’再參關3,為統計多數顆該發光二極體的 出光色座標值繪製成的一圖表，如此，因螢光粉在每一顆 該發光二極體中的分佈不均勻，造成多數顆該發光二極體 的出光色座標值上的分佈區域亦較廣的現象，表示個別發 光二極體出光的白光色座標值差異較大。 【發明内容】 因此，本發明之目的，即在提供一種可以改善出光色 座標分佈的發光二極體的封裝結構。 本發明之另一目的，即在提供一種可以改善出光色座 標分佈的發光二極體封裝結構的製造方法。 於是，本發明發光二極體的封裝結構包含一基座、一 發光二極體、一第一膠層及一第二膠層，該基座具有一表 面，.該發光二極體晶片設置於該基座表面上，該第一膠層 摻雜有螢光粉，並以類似於該發光二極體晶片的外形包覆 於該發光二極體晶片上，且由該發光二極體晶片至該第一 201125167 膠層-頂面的距離，與由該發光二極體晶片至該第一朦層 任-側面的距離實質上相等，該第二膠層包覆於該第一膠 層外。 於是，本發明發光二極體的封裝結構的製造方法，包 含以下步驟’首先，將至少一發光二極體晶片設置於一基 座的表面上，接著’將—摻雜有螢光粉的第—膠層以類似 於該發光二極體晶片的外形包覆於該發光二極體晶片上， 並使由該發光二極體晶片至該第一膠層一頂面的距離與 由該發光二極體晶片至該第一膠層任一側面的距離實質上 相等’最後，將一第二膠層包覆於該第一膠層外。 本發明之功效在於利用由該發光二極體晶片至該第一 膠層頂面及該發光二極體晶片至該第一膠層任一側面的 距離實質上相讓摻雜有螢光粉的該第一膠層在包覆該 發光二極體晶片的各方向厚度差異減少使得該發光二極 體曰曰片各方向發出的光線行進路徑長度能相似，出光顏色 相似更因„周玉第__膠體厚度下，進而達到使多數發光二 極體的出光在色座標上的分佈更加集中。 【實施方式】 有關本發月之刖述及其他技術内容、特點與功效，在 以下配合參考圖式之—個較佳實施例料細說明中，將可 清楚的呈現。 參閱圖4,本發明發光二極體的封装結構之一較佳實 例包含一基座2' —發光二極體晶片 第二膠層5 施 第一膠層4及 201125167 該基座2的一表面具有一絶緣部21，及二被該絶緣部 21隔開的電極部221、222。 “該發光—極體晶片3包括一發光頂面及四側面，該發 光二極體晶片3是設置於該基座2電極部221 i，在本較 佳實施例中，該發光二極體晶片3以打線型式（wh bonding)電性連接於該等電極部221、222。 該第I層4穆雜有螢光粉，以類似於該發光二極體 曰曰片3的外形，轉移成型地包覆於該發光二極體晶片3上 即以類似共形成方式（conformal molding )包覆於該發 光二極體晶片3外’所以，該第-膠層4的外形同樣包括 一頂面及四側面，進一步說明的是，該第一膠層4的外形a light emitting diode chip (LED Die) 12 connected to the electrodes, 112, and a glue layer 13 made of a phosphor-doped sealant and covering the light emitting diode chip 12, The adhesive layer 13 is formed by injection molding or transfer voiding, wherein the thickness of the adhesive layer 13 from the top surface to the surface of the base u is 22 μm, but the light-emitting layer 2 The thickness of the polar body wafer 12 is 1 μm, and the width of the adhesive layer 13 is about 4 to 8 times that of the LED 12, depending on the long and short axis directions of the LED 12 . Differently, the adhesive layer 13 around the LED chip 12 is thicker, and the upper adhesive layer 13 is thinner. Thus, the sealant is formed in the injection molding and transfer molding of the adhesive layer 13 The space above the LED array 12 is too small compared to the surrounding space, and the fluidity of the encapsulant above the LED wafer 12 is different from the surrounding fluidity, which causes the phosphor powder doped in the encapsulant to flow. Different sex produces different precipitation distributions' usually causes phosphor powder in the luminescent diode crystal Poor distribution of 12 above. In addition, since the thickness of the adhesive layer is different from the thickness of the periphery, 13 the light of the light emitted from the semiconductor light-emitting diode 12 in each direction of the light-emitting diode wafer 12 in the direction of the light-emitting diode 12 has a different travel path length in the colloid 13 , for example, for example, : The light that is emitted to the periphery has a long path of travel. The relative distribution of the phosphor powder is also better than that of the phosphor powder. Therefore, it has a greater amount of yellow light, and the phase is light. Because the traveling path is relatively short, the relative amount of phosphor powder is relatively small, so there is no chance to interact with the phosphor powder, resulting in less yellow light; see Figure 2, for a single light-emitting diode with a vertical light-emitting surface The direction is 0 degree' along the long-axis direction, and the light color coordinate value (CIE) of each angle is drawn into a graph. It can be seen that the color coordinate value distribution area is wider, indicating that the color coordinates of the different angles are different. That is, the color of the white light at each angle is not uniform, and then the reference numeral 3 is a graph for counting the color coordinates of the plurality of light-emitting diodes, so that the phosphor powder is in each of the light-emitting diodes. Points Uneven, resulting in the emission of two light distribution area on the color coordinate value of the most polar body pieces broader phenomenon also shows individual light-emitting diode white light color coordinates values quite different. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a package structure for a light-emitting diode that can improve the distribution of light color coordinates. Another object of the present invention is to provide a method of fabricating a light emitting diode package structure that can improve the distribution of light color coordinates. Therefore, the package structure of the light-emitting diode of the present invention comprises a pedestal, a light-emitting diode, a first adhesive layer and a second adhesive layer, the pedestal having a surface, the light-emitting diode chip is disposed on The first adhesive layer is doped with phosphor powder on the surface of the pedestal, and is coated on the illuminating diode wafer in an outer shape similar to the shape of the illuminating diode chip, and the luminescent diode chip is The distance of the first 201125167 glue layer-top surface is substantially equal to the distance from the light-emitting diode chip to the side-side of the first layer, and the second glue layer is coated outside the first glue layer. Therefore, the method for fabricating the package structure of the light-emitting diode of the present invention comprises the following steps: First, at least one light-emitting diode wafer is disposed on a surface of a pedestal, and then the first layer is doped with phosphor powder. - a glue layer is coated on the light emitting diode wafer in a shape similar to the shape of the light emitting diode chip, and a distance from the light emitting diode chip to a top surface of the first adhesive layer is The distance from the polar body wafer to either side of the first adhesive layer is substantially equal. Finally, a second adhesive layer is coated outside the first adhesive layer. The effect of the present invention is to utilize the distance from the light emitting diode chip to the top surface of the first adhesive layer and the light emitting diode chip to either side of the first adhesive layer to substantially dope the phosphor powder The difference in thickness of the first adhesive layer in each direction of the light-emitting diode wafer is reduced, so that the length of the light travel path of the light-emitting diode chip in each direction can be similar, and the color of the light is similar because of „周玉第__ Under the thickness of the colloid, the distribution of the light emitted by the majority of the light-emitting diodes on the color coordinates is further concentrated. [Embodiment] The description of the present month and other technical contents, features and effects are as follows: A preferred embodiment will be clearly shown in the detailed description. Referring to FIG. 4, a preferred example of the package structure of the light-emitting diode of the present invention comprises a pedestal 2'-a second electrode of a light-emitting diode chip. Layer 5 is applied to the first adhesive layer 4 and 201125167. One surface of the susceptor 2 has an insulating portion 21 and two electrode portions 221 and 222 separated by the insulating portion 21. "The illuminating-electrode wafer 3 includes a light-emitting portion. Top and four sides, the The illuminating diode chip 3 is disposed on the pedestal 2 electrode portion 221 i. In the preferred embodiment, the illuminating diode chip 3 is electrically connected to the electrode portion 221 by wh bonding. 222. The first layer 4 is mixed with phosphor powder, and is similarly shaped to the shape of the light-emitting diode sheet 3, and is formed by transfer molding on the light-emitting diode wafer 3 in a similar manner. Covering the outside of the LED chip 3, the shape of the first adhesive layer 4 also includes a top surface and four side surfaces. Further, the shape of the first adhesive layer 4 is further illustrated.
與該發光二極體晶片3類似，且第一膠層4覆蓋於該LED 的長寬尚厚度應相近。在本發明中，自該第一膠層4頂面 至該基座2表面的厚度為該發光二極體晶片3厚度的至少 四倍，在本較佳實施例中，該發光二極體晶片3厚度為1〇〇 微米’該第一膠層4頂面至該基座2的厚度為400微米。 該第二膠層5包覆於該第一膠層4外與該基座2上， 該第二膠層5的折射率介於該第一膠層4的折射率與空氣 的折射率間，如此，可以減少由該第一膠層4向該第二膠 層5行進的光線在該第二膠層5的外表面造成全反射的狀 况’以提高出光強度，另外，該第二膠層5的一外表面為 —曲面且該第二膠層5概呈半球形或半橢圓形，如此，該 第二膠層5可作為透鏡用，達到增加取光效率及改變光型 的功效。 201125167 參閱圖5’為單顆本發明發光二極體，以垂直發光面的 方向為0度’將沿-長轴方向的各角度出光的色座標值繪 製成的―®表’由冑5可Μ角度的色座標值分佈區域， 相較於習知的發光二極體更為集中，表示在不同角度的色 座標差異較小，即在各角度的白光顏色均勻，參閱圖6,為 統計多數顆本發明發光二極體的出光色座標值繪製成的„ 圖表’因為本發明的該第—膠層4滿足由該發光二極體晶 片3至該第一膠層4的頂面的距離，與由該發光二極體晶 片3至該第-膠層4的任意一側面的距離實質上相等的條 件，可使該第-膠層4各方向厚度均一，進而讓本發明發 光二極體的色座標分佈較集中，表示個別發光二極體封裝 結構所出光的白光顏色差異較小。 在本較佳實施例中’該基座2為一 pCB ( printed circuit board)、陶竟基板、金屬板封裝型式，無反射裝置。 參閱圖7，值得一提的是，本發明發光二極體的基座2 也可包括一呈環狀並向上延伸的反射部23，該反射部Μ具 有一供該第二膠層5射出成型填入的空間。在本實施例中 ，該基座 2 是 PLCC(Plastic Leaded Chip Carrier)封裝型式。 此外’上述封裝結構中該發光二極體晶片3也可以為覆晶 型式（flip chip，圖未示）電性連接於該等電極部221、222 0 上述本發明發光二極體的製造方法，包含以下步驟： 參閲圖8至圖10，並配合圖4，步驟6〇1，將該發光二 極體晶片3設置於該基座2表面：先將至少—發光二極體 201125167 日曰片3 δ又置於該基座2的表面上，該基座2的一表面具有 該絶緣部21’及被該絶緣部21隔開的該等電極部221、 222，在本較佳實施例争，該發光二極體晶片3以打線型式 (wire bonding)電性連接於該等電極部221、222。 步驟602，利用該第—膠層4封裝該發光二極體晶片3 .將摻雜有螢光粉的該第一膠層4以類似於該發光二極體 曰曰片3的外形，轉移成型（transfer瓜⑴土叫)地包覆於該發光 二極體晶片3 _L，使得由該發光二極體晶片3至該第一膠 層4的頂面的距離，與由該發光二極體晶片3至該第一膠 層4的任意一側面的距離實質上相等，並使得該第一膠層* 頂面到該基座2表面的厚度是該發光二極體晶片3厚度 的至少四倍。在本實施例中，該第一膠層4為一含有均勻 混合螢光粉(Ph〇sphor)的樹脂，例如，含有釔鋁石榴石 (YAG’ Y3Al5〇12Ce)或是石夕酸鹽（sincate)的樹脂，可以吸收該 發光二極體晶4 3發射出的藍光後轉發出黃光，並利用轉 移成型方式包覆於該發光二極體晶片3上。另外在本實施 例中，該發光二極體晶片3厚度為⑽微米，該第一膠層4 頂面至該基座2的厚度為400微米。 步驟咖，利用該第二膠層5封裝該第一膠層4:將該 第-膠層5利用轉移成型方式包覆於該第 第二膠層5的一外表面形成一曲面且使°哀 r衣办珉曲面。在本實施例中，嗜第 二膠層5為-折射率介於該第_膠層4的折射率盘*氣的 折射率間。另夕卜，該第二膠層5的外表面概呈半球二半 橢圓形，如此’該第二膠層5可作為透鏡用，== 201125167 光效率及調整光型的功效。 在本較佳實施例中，該基座2為一 PCB ( printed circuit board )、陶瓷基板、金屬板封裝型式，無反射裝置。 參閱圖7，值得一提的是’在步驟601時.，該基座2也 可具有呈環狀並向上延伸的該反射部23，在本實施例中， 該基座 2 是一 PLCC(Plastic Leaded Chip Carrier)封裝型式的 基座。之後，在步驟603中，將該第二膠層5以射出成型 方式填入該反射部23内並包覆於該第一膠層4。Similar to the LED chip 3, and the thickness of the first adhesive layer 4 covering the LED should be similar. In the present invention, the thickness from the top surface of the first adhesive layer 4 to the surface of the susceptor 2 is at least four times the thickness of the light-emitting diode wafer 3. In the preferred embodiment, the light-emitting diode wafer 3 The thickness is 1 μm. The thickness of the top surface of the first adhesive layer 4 to the susceptor 2 is 400 μm. The second adhesive layer 5 is coated on the outside of the first adhesive layer 4 and the susceptor 2, and the refractive index of the second adhesive layer 5 is between the refractive index of the first adhesive layer 4 and the refractive index of the air. In this way, the condition that the light traveling from the first adhesive layer 4 to the second adhesive layer 5 causes total reflection on the outer surface of the second adhesive layer 5 can be reduced to increase the light intensity, and in addition, the second adhesive layer An outer surface of the surface is a curved surface and the second adhesive layer 5 is substantially hemispherical or semi-elliptical. Thus, the second adhesive layer 5 can be used as a lens to increase the light extraction efficiency and change the light type. 201125167 Referring to FIG. 5' is a single light-emitting diode of the present invention, the color coordinate value of the light emitted from each angle along the long axis direction is 0 degree 'the direction of the vertical light-emitting surface' is drawn from 胄5 The color coordinate value distribution area of the Μ angle is more concentrated than the conventional light-emitting diodes, indicating that the color coordinates at different angles are small, that is, the white light color at each angle is uniform, see Figure 6, which is a statistical majority. The light-emitting coordinate value of the light-emitting diode of the present invention is drawn as a "graph" because the first adhesive layer 4 of the present invention satisfies the distance from the light-emitting diode wafer 3 to the top surface of the first adhesive layer 4, The thickness of the first adhesive layer 4 in each direction can be made uniform under the condition that the distance from the light emitting diode chip 3 to any one side of the first adhesive layer 4 is substantially equal, thereby allowing the light emitting diode of the present invention to be The color coordinates are more concentrated, indicating that the white light color difference of the light emitted by the individual light emitting diode package structure is small. In the preferred embodiment, the base 2 is a pCB (printed circuit board), a ceramic substrate, and a metal plate. Package type, no reflection device. 7. It should be noted that the pedestal 2 of the light-emitting diode of the present invention may also include a reflective portion 23 extending in an annular shape and extending upwardly. The reflective portion Μ has a second adhesive layer 5 for injection molding. In this embodiment, the pedestal 2 is a PLCC (Plastic Leaded Chip Carrier) package type. In addition, the LED package 3 in the above package structure may also be a flip chip (not shown). Electrically connected to the electrode portions 221, 222 0 The method for manufacturing the light-emitting diode of the present invention includes the following steps: Referring to FIG. 8 to FIG. 10, and in conjunction with FIG. 4, step 6〇1, the light-emitting diode The surface of the susceptor 2 is disposed on the surface of the susceptor 2: at least the illuminating diode 201125167 is placed on the surface of the pedestal 2, and a surface of the pedestal 2 has the insulating portion 21' And the electrode portions 221 and 222 separated by the insulating portion 21. In the preferred embodiment, the LED chip 3 is electrically connected to the electrode portions 221 and 222 by wire bonding. Step 602, the LED layer 3 is encapsulated by the first adhesive layer 4. The first adhesive layer 4 of the light powder is coated on the light emitting diode chip 3_L by a transfer molding (transfer melon) in a shape similar to that of the light emitting diode chip 3, so that the light is emitted by the light emitting diode The distance from the diode chip 3 to the top surface of the first adhesive layer 4 is substantially equal to the distance from the LED substrate 3 to any one side of the first adhesive layer 4, and the first glue is made The thickness of the top surface of the layer* to the surface of the susceptor 2 is at least four times the thickness of the luminescent diode chip 3. In this embodiment, the first adhesive layer 4 is a uniform mixed fluorescing powder (Ph〇sphor). a resin, for example, a resin containing yttrium aluminum garnet (YAG' Y3Al5〇12Ce) or sincate, which can absorb the blue light emitted by the light-emitting diode crystal 4 and then forward yellow light. And coating the LED body 3 with a transfer molding method. In addition, in the embodiment, the thickness of the LED 3 is (10) micrometers, and the thickness of the top surface of the first adhesive layer 4 to the susceptor 2 is 400 micrometers. The first adhesive layer 4 is encapsulated by the second adhesive layer 5: the first adhesive layer 5 is coated on the outer surface of the second adhesive layer 5 by a transfer molding method to form a curved surface and r clothing to do the surface. In the present embodiment, the second adhesive layer 5 has a refractive index between the refractive indices of the refractive index discs of the first adhesive layer 4. In addition, the outer surface of the second adhesive layer 5 is substantially hemispherical and semi-elliptical, so that the second adhesive layer 5 can be used as a lens, == 201125167, light efficiency and the effect of adjusting the light type. In the preferred embodiment, the pedestal 2 is a printed circuit board, a ceramic substrate, a metal plate package type, and no reflection device. Referring to FIG. 7, it is worth mentioning that, in step 601, the base 2 may also have the reflection portion 23 extending in a ring shape and extending upward. In this embodiment, the base 2 is a PLCC (Plastic). Leaded Chip Carrier). Thereafter, in step 603, the second adhesive layer 5 is filled into the reflecting portion 23 by injection molding and coated on the first adhesive layer 4.
參閱圖10至圖12,值得一提的是，本發明發光二極體 的製造方法也可以達到一次封裝多個發光二極體晶片3的 目的’只要在步驟601中，將該基座2準備成一具有一長 方向的板材’將多數個發光二極體晶片3沿該基座2的長 方向排列且分隔設置；中接著，在步驟6〇2、6〇3中將該 第-、二膠層4、5依序包覆，最後’增加一切割步驟，:; 沿該長方向切割該第一、第二膠層4、5及基座2，分割成 多數個小單元，如冑4所示，即達到-次封裝多個發光二 極體晶片3的目的。而且可依設計需求，每一單元具有一 發光二極體晶片3，或多數個發光二極體晶片3。 此外，上述封裝結構的製造方法中，該發光二極體晶 片3也可以為覆晶型式（fUp chip，圖未示）電性連接於該 等電極部221、222。 综上所述，由於該發光二極體晶片3至該第—膠層 頂面及該發光二極體晶片3至該第—膠層4任一側：的 離實質上相等，讓均句摻雜有螢光粉的該第—膠層4,在 9 201125167 覆該發光二極體晶片3的各方向厚度差異減少，使得該發 光二極體晶片3各方向發出的光線行進路徑長度能相似， 出光顏色相似，進而達到使多數發光二極體3的出光在色 座標上的分佈更加集中，能提供均勻白光，提升光學性能 ，故確實能達成本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一剖視示意圖，說明一種傳統發光二極體的封 裝結構； 圖2是一圖表，說明單一顆傳統發光二極體的各角度 出光色座標的分佈圖； 圖3是一圖表，說明多數顆傳統發光二極體的色座標 分佈圖； λ 圖4是一剖視示意圖，說明本發明發光二極體的封裝 結構的一較佳實施例； 圖5是一圖表，說明本較佳實施例單一顆發光二極體 的各角度出光色座標的分佈圖； 圖6是一圖表，說明本較佳實施例統計多數顆發光二 極體的出光色座標分佈圖； 圖7是一剖視示意圖，說明本較佳實施例還包含一外 基座； 10 201125167 圖8是—減示意®，㈣本較佳實關的-發光二 極體晶片設置於該基座表面的狀況； 圖9是一剖視示意圖，說明本較佳實施例的一第一膠 層4封裝該發光二極體晶片3的狀況； 圖1〇是:流程圖，說明本較佳實施例的製造流程； 田=你夕Z等角不意圖’說明本較佳實施例的製造流程 用於製作夕數顆發光二極體的態樣；及 12 是--—Referring to FIG. 10 to FIG. 12, it is worth mentioning that the manufacturing method of the light-emitting diode of the present invention can also achieve the purpose of packaging a plurality of light-emitting diode chips 3 at one time. 'As long as the pedestal 2 is prepared in step 601 Forming a sheet having a long direction 'distributing a plurality of light emitting diode chips 3 along the long direction of the base 2 and separating them; and subsequently, the first and second glues in steps 6〇2, 6〇3 The layers 4, 5 are sequentially coated, and finally 'add a cutting step::; cutting the first and second adhesive layers 4, 5 and the pedestal 2 along the long direction, and dividing into a plurality of small units, such as 胄4 That is, the purpose of encapsulating a plurality of light-emitting diode chips 3 is achieved. Moreover, each unit may have a light-emitting diode chip 3 or a plurality of light-emitting diode chips 3, depending on the design requirements. Further, in the method of manufacturing the package structure, the LED chip 3 may be electrically connected to the electrode portions 221 and 222 in a flip chip pattern (not shown). In summary, since the light-emitting diode chip 3 to the top surface of the first adhesive layer and the light-emitting diode wafer 3 to either side of the first adhesive layer 4 are substantially equal, let the sentence blend The thickness of the first adhesive layer 4 mixed with the phosphor powder is reduced in each direction of the light-emitting diode wafer 3 at 9 201125167, so that the length of the light travel path of the light-emitting diode wafer 3 in each direction can be similar. The color of the light is similar, so that the distribution of the light emitted by the majority of the light-emitting diodes 3 on the color coordinates is more concentrated, and uniform white light can be provided to improve the optical performance, so that the object of the present invention can be achieved. The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a package structure of a conventional light-emitting diode; FIG. 2 is a diagram showing a distribution map of light-emitting coordinates of each angle of a single conventional light-emitting diode; 3 is a diagram illustrating a color coordinate distribution of a plurality of conventional light-emitting diodes; λ FIG. 4 is a cross-sectional view showing a preferred embodiment of the package structure of the light-emitting diode of the present invention; FIG. FIG. 6 is a diagram illustrating the distribution of the color coordinates of the plurality of light-emitting diodes in the preferred embodiment of the present invention; FIG. 6 is a diagram illustrating the distribution of the color coordinates of the plurality of light-emitting diodes in the preferred embodiment; 7 is a schematic cross-sectional view showing that the preferred embodiment further includes an external pedestal; 10 201125167 FIG. 8 is a subtractive schematic, and (4) the preferred embodiment of the light-emitting diode is disposed on the surface of the pedestal. FIG. 9 is a cross-sectional view showing a state in which a first adhesive layer 4 of the preferred embodiment encapsulates the LED 3; FIG. 1 is a flow chart illustrating the manufacture of the preferred embodiment. Process; field = your eve Z isometric It is intended to 'process for manufacturing the preferred embodiment of the present embodiment for the production aspect Tokyo several pieces of the light emitting diode; and 12 ---
的製造流料角示意圖，朗本較佳實施例 製 於製作多數顆發光二極體的態樣。A schematic diagram of the manufacturing flow angle, the preferred embodiment of the Langben is made to produce a plurality of light-emitting diodes.
11 201125167 【主要元件符號說明】 1…… …·封裝結構 221 ....... •電極部 11 ·...· ----基座 222 ....... •電極部 111 ·· —表面電極 23......... 反射部 112… —表面電極 3 .......... •發光二極體晶片 12•.… •…發光二極體晶片 4 .......... 第 膠層 13•.… …·膠層 5 ……·· 第二膠層 2…… •…基座 601-603 步驟 21…· •…絕緣部 I........... 厚度 1211 201125167 [Description of main component symbols] 1...... .... package structure 221 . . . • electrode section 11 ·...· ---- pedestal 222 . . . ··· Surface electrode 23.........Reflecting part 112...-Surface electrode 3 ........... Light-emitting diode wafer 12•....•...Light-emitting diode chip 4 .......... The first layer of glue 13•.... ...·胶层5......·· The second layer 2...•...Base 601-603 Step 21...·•...Insulation I ........... thickness 12