201118146 六、發明說明： 【發明所屬之技術領域】 片及使用其之晶圓 可減少將半導體晶 或裂紋（以下記載 片及使用其之晶圓 本發明係關於一種晶圓貼合用黏著 之加工方法，更詳細而t，係關於一種 圓切斷分離成小片時產生的晶片之缺損 為碎裂（chipping))的晶圓貼合用黏著 之加工方法。 【先前技術】 IC (integrated circuit，積體電 ^ ^ J > LSI ( large-scale integration，大型積體電路）等 牛導體裝置之製造步驟中， 矽、砷化鎵等之半導體晶圓係於 >止 竹於切斷分離（切割）成小片 之步驟之後，供給至選取步驟。 以下—面參照圖2〜5所示 之剖面圖，一面就通常的半導體 干导體日日回之切割步驟及選取步 驟進行說明。 首先，於兩端固定於固定央丨】由 且於基材樹脂膜上 塗佈黏著劑而成之晶圓貼合用黏荖Κ 川鄱者片12上，貼合半導體晶 圓1 3 (圖2 )，藉由切割將晶圓分宝，丨丸_ 1 日圓刀割為几件小片（晶片） 14(圖3)。繼而’為了選取晶片14，藉由擴幅器（以卿㈣ 16沿實線箭頭方向15上頂晶圓貼合用黏著μ η，沿虛線 箭頭方向17延伸而擴展晶片14間之間㉟（圖4)，進行全 部晶片14之選取或一部分晶片14之選取（圖5)。再者王， 於圖2〜5中，相同符號表示相同部分。 先前’自半導體晶圓之切割步驟至選取步驟之步驟 中’-直使用於基材樹脂臈上塗佈黏著劑而成之黏著片。 201118146 此種黏者片中，考慮到延伸性 構成之基材，例如有時使用 由相對軟質之樹脂所 切割時會產 κ乙烯臈或聚乙烯系膜。 町曰屋生稱為碎裂之晶片之 到ΙΟΟ/zm以上之情形並不少見，/、髮紋，大小達 有時亦會影響電路本身之性能^碎裂到達至電路面，則 有時因碎裂而產生之曰片^ ,於進行選取步驟時， 及王t日日月的碎片舍 破壞電路本身。 他晶片表面， 切割時所使用之稱為刀片 θ中t θ μ # & de)的旋轉刀會引起切 J τ之日日片振動。此時，晶片盥 此，朮古”片接觸而產生碎裂。因 之m 乂 t 々 日日圓几全固定避免產生振動 之方法（例如參照專利文獻丨）。鈇 ^ ^ m …、而，於進行重複切割之 製化步驟之情形時，蠟之固定、 * ^ 云除較為化費工夫，故而 專利文獻1記載之方法並非現實 —F兄貫可仃。而且，於無法將蠟 疋王去除之情形時，壞會殘留形成晶圓之污染，故而於對 W物質極度忌避之電子機器中’難以適用專利文獻ι之 方法。 [先前技術文獻] [專利文獻] 專利文獻1 :日本專利特開平7·169718號公報 【發明内容】 [發明所欲解決之問題] 本發明欲解決上述先前技術所伴隨之問題，其課題在 於提供一種可減少切割時發生之產生碎裂之情況的晶圓貼 合用黏著片及使用其之晶圓之加工方法。 201118146 本發明者等人就上述課題進行致力研究，結果發現藉 由使晶圓貼合用黏著片具有特定之損失缝，可解決上述 課題，本發明係基於該發現而完成者。 亦即，根據本發明，提供以下之技術方案。 (!) 一種晶圓貼合用黏著片，其係基材樹脂臈以及於 該基材樹脂膜上形成之黏著劑層而成者，其特徵在於··使 用加工該黏著片成寬度5 mm所得之試片，利用動態黏彈性 測定裝置，藉由於溫度^艺施加頻率4〇〇〜9〇〇 Hz之拉伸 應力而測定之損失係數的最小值為G2G以上，且藉由於溫 度15〜40°C施加頻率650 1^之拉伸應力而測定之損失係數 的最小值為0.20以上。 (2) 如（1)所述之晶圓貼合用黏著片，其中上述基 材樹脂膜之5%模數為4.〇〜7 〇 MPa，且撕裂強度為1〇〇 N/mm以上。 (3) 如（1)或（2)所述之晶圓貼合用黏著片，其中 上述基材樹脂膜之至少一層含有選自苯乙烯_氫化異戊二烯 -苯6烯嵌段共聚物、苯乙烯_異戊二烯_苯乙烯共聚物、苯 乙烯-氫化丁二烯-苯乙烯共聚物及苯乙烯-氫化異戊二烯-丁 二晞-苯乙烯共聚物中之至少一種。 (4 )如（1 )至（3 )中任一項所述之晶圓貼合用黏著 片，其中上述基材樹脂膜之至少一層為如下樹脂組成物， 該樹脂組成物中相對於作為（A)成分之聚丙烯樹脂1〇〇質 量份，含有作為（B)成分之選自笨乙烯·氫化異戊二烯笨 乙烯嵌段共聚物、苯乙烯_異戊二烯_苯乙烯共聚物、苯乙烯 -氫化丁二烯-笨乙烯共聚物及苯乙烯_氫化異戊二烯_ 丁二烯 201118146 _苯乙缔共聚物中之至少一種30〜100質量份。 (5) 如（4)所述之晶圓貼合用黏著片，其中上述基 材樹脂膜中之至少一層係由以（A)成分作為連續相、以（^) 成分作為分散相之樹脂分散體所構成，且該分散相粒子之 平均直彳空為1 5 n m以上。 ' (6) 如（1)至（5)中任一項所述之晶圓貼合用黏著 片其中於上述黏著劑層上進而形成有接著劑層。 (7) 如（1)至（6)中任一項所述之晶圓貼合用黏著 片，其中形成上述黏著劑層之黏著劑為丙烯酸系黏著劑。 (8 ) —種晶圓之加工方法，其係將晶圓貼合於如（ι ) 至（7)中任一項所述之晶圓貼合用黏著片上進行該晶圓之 切割者’其特徵在於：並不切入至上述基材樹脂膜。 [發明之效果] 利用本發明之晶圓貼合用黏著片及使用其之晶圓之加 工方法，可大幅減少碎裂。 本發明之上述以及其他特徵及優點將根據適宜參照隨 附圖式的下述記載而明確。 【實施方式】 圖1係表示本發明之晶圓貼合用黏著另之較佳實施態 様的概略剖面圖’具有基材樹脂膜1、以及於基材樹脂臈1 上形成之黏著劑層2。於本發明_，如後述之步驟之說明中 所揭不’黏著片包含黏著膠帶（例如切割膠帶或切割黏晶 膠帶）。 對於本發明之晶圓貼合用黏著片，使用加工成寬度5 201118146 mm所得之臈狀之試片，利用動態黏彈性測定裝置，藉由於 溫度23。(：施加頻率4〇〇〜9〇〇 Hz之拉伸應力而測定之損失 係數的最小值為0 20以丨，且藉由於溫度15〜贼施加頻 率650 Hz之拉伸應力而測定之損失係數的最小值^ 0.20以 上。通常對於本發明之晶圓貼合用黏著片，使用加工成寬 度5 mm所得之臈狀之試片，利用動態黏彈性測定裝置，藉 ^於溫度23°C施加頻率〜_ Hz之拉伸應力而測定之 損失係數的最小值為〇4〇以下，且藉由於溫度15〜_施 加頻率650 Hz之拉伸應力而測定之損失係數的最小 0.40 以下。 於此，對通常之動態黏彈性之測定方法進行說明。該 方法係對試驗體施以週期性之微小應變，並測定試驗體對 該微小應變之響應的方法/#由使用該方法，可獲知試驗 =具有多大程度之彈性要素及黏性要素之兩要素。若試驗 為凡王之彈性體，則對該微小應變之響應以同相位而表 現，以儲存彈性模數與損失彈性模數之比而求出之損失係 數為零。但是若存在黏性要素，則響應產生延遲，損失係 數得正值。 儲存彈性杈數係因彈性要素而表現，彈性要素具有於 =施加應力而產生變形時，接收對該變形之響應，從而 I予力學能量之性質’相對於此，損失彈性模數係因黏性 素而表ί見|有於藉由施加應力而產生變形時，將對應 所施加之應力之力學能量作為熱而消耗之性質。 〜 本：明中發現’切割加工時之應力係由刀片之旋轉而 右對日日圓貼合用點著片施加拉伸應力時之損失係數 201118146 為特定之值以上，目丨丨曰γ§1 Βμ人pH逢t , 則曰曰圓貼合用黏者片可抑制對 之變形恢復時所對應的晶片振動，因而可減少碎裂， 另外，由於動態黏彈性之值會根據施 溫度而轡仆，枓工π 月干汉列疋 ”變而可使溫度為固定而採用頻率特性，或施 加固定頻率而採用溫度特性。 一 於本發明巾’損失係數可使用動態黏彈性測定裝 如，UBM 公司製 、 “商。口名Rhe0gel.E4〇〇〇」），由所測 之储存拉伸彈性模數（E,)與損失拉伸彈性模數（ =(e’/e’’）而求出。溫度2rc、頻率4〇〇〜_七下之損 =二最，值可藉由將溫度固…代，於頻率為4〇〇 ζ之減内對以施加拉伸應力，由 ==r5，、頻率6,下之損二 二厂度15〜40C下’對試片施加頻率 “Ο Hz之拉伸應力’由試片之響應而求出。201118146 VI. Description of the Invention: [Technical Fields of the Invention] Sheets and wafers using the same can reduce semiconductor crystals or cracks (the wafers described below and wafers using the same are related to the processing of a wafer bonding adhesive) The method, more specifically, is a method for processing a wafer bonding adhesive which is a chip-cutting defect in which a wafer is cut into small pieces and is chipped. [Prior Art] In the manufacturing steps of an IC (integrated circuit), a semiconductor device such as an LSI (large-scale integrated circuit), a semiconductor wafer such as germanium or gallium arsenide is attached to > After stopping the separation (cutting) into small pieces, the bamboo is supplied to the selection step. The following is a cross-sectional view shown in Figs. 2 to 5, and the conventional semiconductor dry conductor is cut back in time. And the steps of the selection are described. First, the wafer is bonded to the substrate resin film by applying an adhesive to the substrate resin film. Wafer 13 (Fig. 2), by wafer cutting the wafer, the _1 日 刀 knife cut into several small pieces (wafer) 14 (Fig. 3). Then 'in order to select the wafer 14, by the expander (In the direction of the solid arrow direction 15, the upper wafer bonding adhesive μ η extends along the direction of the dotted arrow 17 to expand between the wafers 14 (Fig. 4), and selects all or a part of the wafer 14 Selection of 14 (Fig. 5). Again, in Figure 2~5, the same character Indicates the same part. Previously, 'from the cutting step of the semiconductor wafer to the step of the selection step' - the adhesive sheet formed by applying the adhesive on the substrate resin. 201118146 In this adhesive sheet, considering the extension In the case of a substrate made of a relatively soft resin, for example, a κ vinyl ruthenium or a polyethylene film may be produced. It is not uncommon for the kimono house to be called a chip of rupture to ΙΟΟ/zm or more. , /, hairline, the size will sometimes affect the performance of the circuit itself ^ fragmentation to the circuit surface, sometimes due to fragmentation caused by the film ^, in the selection step, and Wang t day and month The chip itself destroys the circuit itself. The surface of the wafer, which is used in the cutting process, is called the rotary knife of the blade θ, t θ μ # & de), which causes the solar eclipse of the cutting J τ. At this time, the wafer is smashed. The ancient film is broken by contact with the film. Because of the m 乂t, the Japanese yen is fixed to avoid the vibration (for example, refer to the patent document 丨). 鈇^ ^ m ..., and the process of repeating the cutting process In the case of the wax, fixed, * ^ In addition to the more laborious work, the method described in Patent Document 1 is not realistic - F brothers can be stunned. Moreover, in the case where the wax enamel king cannot be removed, the damage of the wafer will remain, so In the electronic device in which the substance is extremely repelled, it is difficult to apply the method of the patent document ι. [Prior Art Document] [Patent Document] Patent Document 1: Japanese Patent Laid-Open No. Hei 7-169718 (Invention) [Problems to be Solved by the Invention] The present invention has been made in an effort to solve the problems associated with the prior art described above, and an object of the invention is to provide a wafer bonding adhesive sheet and a method of processing a wafer using the same, which can reduce the occurrence of chipping during dicing. In the inventors of the present invention, the inventors of the present invention have made an effort to study the above problems, and have found that the above problems can be solved by making the adhesive sheet for wafer bonding have a specific loss seam, and the present invention has been completed based on the findings. That is, according to the present invention, the following technical solutions are provided. (!) An adhesive sheet for wafer bonding, which is a base resin enamel and an adhesive layer formed on the base resin film, and is characterized in that the adhesive sheet is processed to have a width of 5 mm. The test piece, using the dynamic viscoelasticity measuring device, the minimum value of the loss coefficient measured by the tensile stress of the temperature application frequency of 4 〇〇 to 9 〇〇 Hz is G2G or more, and by the temperature of 15 to 40 ° The minimum value of the loss coefficient measured by applying a tensile stress of 650 ° C to C is 0.20 or more. (2) The adhesive sheet for wafer bonding according to (1), wherein the base resin film has a 5% modulus of 4. 〇 7 〇 MPa and a tear strength of 1 〇〇 N/mm or more . (3) The adhesive sheet for wafer bonding according to (1) or (2), wherein at least one layer of the base resin film contains a styrene-hydrogenated isoprene-benzene 6-ene block copolymer At least one of a styrene-isoprene-styrene copolymer, a styrene-hydrogenated butadiene-styrene copolymer, and a styrene-hydrogenated isoprene-butadiene-styrene copolymer. The adhesive sheet for wafer bonding according to any one of the above aspects, wherein at least one of the base resin films is a resin composition, and the resin composition is relative to A) component of the polypropylene resin containing 1 part by mass of the component (B) selected from the group consisting of stupid ethylene/hydrogenated isoprene stupid ethylene block copolymer, styrene-isoprene-styrene copolymer, At least one of 30 to 100 parts by mass of the styrene-hydrogenated butadiene-styrene copolymer and the styrene-hydrogenated isoprene-butadiene 201118146-phenylethylene copolymer. (5) The adhesive sheet for wafer bonding according to (4), wherein at least one of the base resin films is dispersed by a resin having a component (A) as a continuous phase and a (^) component as a dispersed phase. The body is composed, and the average direct hollow of the dispersed phase particles is 15 nm or more. The adhesive sheet for wafer bonding according to any one of (1) to (5) wherein an adhesive layer is further formed on the adhesive layer. (7) The adhesive sheet for wafer bonding according to any one of (1) to (6) wherein the adhesive for forming the adhesive layer is an acrylic adhesive. (8) A method of processing a wafer by laminating a wafer on a wafer bonding adhesive sheet according to any one of (1) to (7) It is characterized in that it does not cut into the above-mentioned base resin film. [Effects of the Invention] The use of the adhesive sheet for wafer bonding of the present invention and the processing method of the wafer using the same can greatly reduce chipping. The above and other features and advantages of the invention will be apparent from the description of the appended claims. [Embodiment] Fig. 1 is a schematic cross-sectional view showing a preferred embodiment of the bonding for wafer bonding of the present invention. The substrate resin film 1 and an adhesive layer 2 formed on a substrate resin crucible 1 are provided. In the present invention, as described in the description of the steps to be described later, the adhesive sheet contains an adhesive tape (e.g., a dicing tape or a dicing tape). For the wafer-attached adhesive sheet of the present invention, a test piece having a width of 5 201118146 mm was used, and a dynamic viscoelasticity measuring device was used, which was at a temperature of 23. (: The minimum value of the loss coefficient measured by applying a tensile stress of 4 〇〇 to 9 〇〇 Hz is 0 20 丨, and the loss coefficient is determined by the tensile stress of the temperature 1500 Hz applied by the thief at a frequency of 650 Hz. The minimum value of the film is 0.20 or more. Generally, for the wafer-attached adhesive sheet of the present invention, a test piece having a width of 5 mm is used, and a dynamic viscoelasticity measuring device is used to apply a frequency at a temperature of 23 ° C. The minimum value of the loss coefficient measured by the tensile stress of ～ Hz is 〇4〇 or less, and the loss coefficient measured by the tensile stress of the frequency of 15 to _ application frequency of 650 Hz is at least 0.40 or less. The method for measuring the dynamic viscoelasticity is generally described. This method is a method of applying a slight strain to the test body and measuring the response of the test body to the micro strain. # By using the method, it is known how large the test is. The two elements of the degree of elasticity and the viscous element. If the test is the elastomer of the king, the response to the small strain is expressed in the same phase, and the ratio of the elastic modulus to the loss elastic modulus is obtained. The loss coefficient is zero. However, if there is a viscous element, the response is delayed, and the loss coefficient has a positive value. The storage elastic parameter is expressed by the elastic element, and the elastic element has a deformation when the stress is applied, and receives the The response of the deformation, and thus the property of the mechanical energy of I. In contrast, the loss of the elastic modulus is due to the viscous element. When there is deformation by applying stress, the mechanical energy corresponding to the applied stress will be The nature of consumption as heat. ~ This: It is found that the stress in the cutting process is the specific value of the loss factor when the tensile stress is applied by the rotation of the blade and the right-hand sun-day bonding is applied to the sheet. When the target γ§1 Βμ human pH is t, the 黏 round-fit adhesive sheet can suppress the vibration of the wafer corresponding to the deformation recovery, thereby reducing the fragmentation and, in addition, due to the value of dynamic viscoelasticity. According to the application temperature, the servant will be tempered to change the temperature to a fixed frequency and use a frequency characteristic, or apply a fixed frequency to adopt a temperature characteristic. The coefficient can be measured by dynamic viscoelasticity measurement, manufactured by UBM, "Business. Name: Rhe0gel.E4"), from the measured tensile elastic modulus (E,) and the loss tensile modulus of elasticity ( =(e'/e''). The temperature is 2rc, the frequency is 4〇〇~_7, and the value is 2%. The value can be fixed by the temperature, and the frequency is 4〇〇ζ. The tensile stress was applied to the test piece by the test piece by applying a tensile stress of ==r5, a frequency of 6, and a loss of the second to the second degree of 15 to 40 C.
碎裂係由切割時之稱A 明去楚^ 亏之稱為刀片之旋轉刀所引起者，本發 月者等就其原因進行了研咖 用黏 九，、，、σ果&現若可利用晶圓貼合 用黏者片而使切割時產生 奢， 生之曰日片振動哀減，則可減小碎 :然後本發明者進行了努力研究，、结果藉由 H膜狀而測定的特錢件下之損失係數為特 以上的晶圓貼合用黏著片，而完成了本發明。 ::刀片進饤切割日夺，因旋轉之刀片與晶圓接 频刀片之轉速通常為25_〜55__，將該值換算： ’員率則為 400 〜900 成 龙 為了抑制發熱，通常係在切割時於 々接觸部分流動15〜25。 ' # C之冷卻水，將晶圓貼合用 保持為大致固定之溫度（例如2rc)。藉由使溫度抑片 201118146 可使 頻率400〜900 Hz之損失係數的最小值為〇2〇以上 切割時產生之晶片振動衰減，從而可防止碎裂。 另外，有時會由於晶圓貼合用黏著片局部冷卻過度/不 足’例如於溫纟15〜4旳’旋轉之刀片與晶圓及晶圓貼合 用黏著片發生接觸。因此，藉由使溫度15〜4〇1、頻率The fragmentation system is caused by the rotary knife that is called the blade when it is cut, and the person who is called the knife of the blade is used for the reason of this month, and the yoghurt is used for the reason. In the present invention, the inventors have made an effort to study, and the result is determined by the H film shape. The present invention has been completed in the case where the loss factor under the special money member is a special adhesive sheet for wafer bonding. ::The blade enters the cutting and cutting time. The rotation speed of the rotating blade and the wafer receiving blade is usually 25_~55__, and the value is converted: 'The rate of the staff is 400 to 900. In order to suppress the heat, the dragon is usually cut. The flow in the contact portion is 15 to 25. ' # C's cooling water maintains the wafer bonding at a substantially constant temperature (eg 2rc). By making the temperature suppression film 201118146, the minimum value of the loss coefficient of the frequency 400~900 Hz is 〇2〇 or more, and the vibration of the wafer generated during the cutting is attenuated, thereby preventing chipping. In addition, there is a case where the blade for bonding the wafer is partially cooled excessively/not enough, for example, the blade rotated by the temperature of 15 to 4 Å is brought into contact with the wafer and the wafer bonding adhesive sheet. Therefore, by making the temperature 15~4〇1, frequency
Hz之損失係數的最小值為〇2〇以上，可使切割時產生之晶 片振動衰減’從而可防止碎裂。 晶圓貼合用黏著片之損失係數為〇 2〇以上較佳為 0.22以上。若損失係數過小，則無法減小切割刀片所引起 之振動’變得難以防止碎裂。通常晶圓貼合用黏著片之損 失係數為0.40以下。 於本發明之晶圓貼合用黏著片中，較佳為基材樹脂膜 之5%模數為4.0〜7·〇 MPa，且撕裂強度為1〇〇N/mm以上。 基材树脂膜之5%模數可藉由依據JIS κ 7127/2/3〇〇，測定 5 /〇應變時之應力而求得。若基材樹脂膜之模數及撕裂強 度在該範圍内，則於延伸步驟中即便施加充分之拉伸應 力，基材樹脂膜亦不會產生撕裂，可均勻地擴展晶片間隔。 若基材樹脂膜之5%模數過大，則本發明之晶圓貼合用 黏著片於圖4所示的擴展晶片14間之間隔之延伸步驟中， 有時無法充分擴展晶片間隔，產生選取不良。若基材樹脂 膜之5%模數過小，則有時晶圓貼合用黏著片於低應力下延 伸’對操作造成障礙。基材樹脂膜之5%模數較佳為4.5〜 6.5 MPa，更佳為 5.0〜6.5 MPa。 本發明之晶圓貼合用黏著片之基材樹脂膜的MD方向 (Machine Direction’ 縱向）及 td 方向（Traverse Direction， 9 201118146 杈向）之5%模數較佳為4.0〜7.0 MPa，原因在於延伸步驟 中可將晶片間之間隔均勻地擴展。 於本發明之晶圓貼合用黏著片中，基材樹脂膜之撕裂 強度為100 N/mm以上。基材樹脂膜之撕裂強度可藉由依據 JISK7128-3而獲得。基材樹脂膜之撕裂強度未達1〇〇N/mm 之晶圓貼合用黏著片有時會於延伸步驟中斷裂。基材樹脂 膜之撕裂強度越大則越不會撕裂，但通常只要為i 5〇 以下則可充分地使用，基材樹脂膜之撕裂強度較佳為ιι〇 N/mm以上，更佳為115 N/mm以上。 另外，藉由圖4所示之擴幅器16進行延伸步驟之情形 時本發明之晶圓貼合用黏著片之基材樹脂膜的MD方向 及TD方向之基材樹脂膜之撕裂強度較佳為i〇〇N/mm以上。 作為基材樹脂膜，只要為對切割步驟中由刀片引起之 晶圓切斷之耐熱性優異者，則可無特別限制地使用。於本 發明中，基材樹脂膜之樹脂包括塑膠、熱塑性彈性體、橡 膠等可成形為片狀之樹脂。作為該樹脂，例如可列舉：選 自「苯乙烯-氫化異戊二烯-苯乙烯嵌段共聚物（以下稱為 :SEPS」）、苯乙稀·異戊二稀_苯乙稀共聚物（以下稱為 「SIS」）、苯乙烯-氫化丁二烯·苯乙烯共聚物（以下稱為 )及苯乙烯·氫化異戊二^ 丁二稀·苯乙埽共聚物 (以下稱為「SEEPS」）中之至少—種。基材樹脂膜ι可為 單層亦可為複層，為複層時可為不同之材料，#可為相同 之材料，較佳為構成基材樹脂膜丨之層中的至少一層含有 選自上述SEPS、SIS、SEBS' SEEPS中之至少—種。曰2選 自該sEPS、SIS、SEBS、SEEPS中之至少―種所構成之層 10 201118146 亦可積層而組合使用。 由選自上述SEPS、SIS、SEBS、SEEPS中之至少一種 所構成之層可為調配有下述化合物之樹脂組成物：聚丙 稀、低密度聚乙稀（LDPE，Low Density Polyethylene)、 直鍵低密度聚乙稀（LLDPE , Linear Low Density Polyethylene)、乙烯-丙烯共聚物、丙烯共聚物、乙烯·丙 烯-二烯共聚物硫化物、聚丁烯、聚丁二烯、聚曱基戊烯、 乙烯-乙酸乙烯酯共聚物、乙烯-(甲基）丙烯酸共聚物、乙烯 -(曱基）丙烯酸甲酯共聚物、乙烯-(甲基）丙烯酸乙酯共聚 物、聚氣乙烯、氣乙烯-乙酸乙烯酯共聚物、乙烯-氯乙烯· 乙酸乙稀醋共聚物、聚胺基甲酸g旨、聚酿胺、離子聚合物、 腈橡膠、丁基橡膠、笨乙烯異戊二烯橡膠、苯乙浠丁二烯 橡膠、天然橡膠及其氫化物或改質物等。 於本發明中’作為離子聚合物，對乙烯-曱基丙烯酸共 t物或乙烯-丙烯酸共聚物之分子間，以鈉或鋅等金屬離子 進行分子間結合而得之樹脂。金屬離子較佳為辞。 構成基材樹脂膜之層中的至少一層較佳為如下樹脂組 成物，即該樹脂組成物中含有作為（A)成分之聚丙烯樹脂， 及作為（B)成分之選自苯乙烯-氫化異戊二烯-苯乙烯嵌段 共聚物、苯乙烯·異戊二烯-苯乙烯共聚物、苯乙烯-氫化丁 二烯-苯乙烯共聚物及苯乙烯·氫化異戊二烯_ 丁二烯·苯乙烯 共聚物中之至少-種。&時之聚丙婦樹脂包括丙烯之均聚 物、乙烯-丙烯共聚物、乙烯·丙烯_二烯共聚物硫化物或其 他丙婦共聚物等，於共聚物之情形時，為無規共聚物、嵌 f又共1物之任一種均可，可適宜選擇。 201118146 於本發明中’ （A)成分之聚丙烯樹脂及（b)成分之 選自SEPS、SIS、SEBS及SEEPS中之至少一種之調配量可 考慮膜強度與減振性之平衡而適宜決定。 較佳為相對於（A )成分之聚丙稀樹脂1 〇〇質量份，（b ) 成分之選自SEPS、SIS、SEBS及SEEPS中之至少種為 30〜100質量份。當相對於（A)成分1〇〇質量份，（B) 成分之選自SEPS、SIS、SEBS及SEEPS中之至少一種過少 時，有時無法獲得充分之減振性，碎裂抑制效果較小。另 外’當相對於（A)成分100質量份，（B)成分之選自SEps、 SIS、SEBS及SEEPS中之至少一種過多時，膜本身變得過 度柔軟，對操作產生障礙。 當含有作為（A)成分之聚丙烯樹脂，及作為（b)成 分之選自苯乙烯-氫化異戊二烯-苯乙烯嵌段共聚物' 苯乙烯 -異戊二烯·苯乙烯共聚物、苯乙烯-氫化丁二烯-苯乙烯共聚 物及苯乙烯-氫化異戊二烯-丁二烯-苯乙烯共聚物中之至少 種時，較佳為以（A)成分作為連續相、以（b )成分作 為分散相，且該分散相粒子之平均直徑為丨5 nm以上之樹 脂分散體。對該分散相之粒子之上限並無特別限制，若過 大則膜強度局部變得不均勻，較佳為25 nm以下。 於以（A)成分作為連續相、以（B)成分作為分散相 之樹脂分散體中，在施加應力時之拉伸或其復原過程中， 藉由（B )成分彼此之分子鏈或側鏈碰撞而產生能量損失。 於（B)成分之分散相之平均直徑過小之情形時，由於鄰接 之分子鏈少，故而有時無法充分地獲得用以抑制碎裂之能 量損失，難以使切割時所產生之晶片振動衰減。 12 201118146 對於基材樹脂膜之與黏著劑層接觸之面，為提高密合 性可對其實施電暈處理，或者設置底塗層等其他層。基材 樹脂膜1之厚度並無特別限制，較佳為3〇〜2〇〇"m, ^佳 為 50〜l〇〇/zmo 另外，於基材樹脂膜丨係以複層所構成之情形時，含 上述SEPS' SIS、SEBS或SEEPS之層之厚度較佳為5〜1〇〇 β m。 黏著劑層可使用各種黏著劑而形成。此種黏著劑中使 用之樹脂成分無任何限定。例如可使用：α天然橡膠或各 種合成橡膠等橡膠系聚合物、丙烯酸系、聚矽氧系、聚乙 烯醚系等作為基礎聚合物之黏著劑。#中，較佳為使用丙 烯酸系聚合物，例如聚（甲基）丙烯酸烷基酯、（甲基）丙烯酸 院基目日與可與其共聚合之其他不飽和單體之共聚物。 可於該等樹脂成分中調配交聯劑以賦予凝聚力。 作為該交聯劑’藉由對應於樹脂成分中之官能基，適 且選擇具有可與該官能基反應之官能基的交聯劑，可對黏 著劑賦予凝聚力，並且可將初期之黏著力設定為所需之 值。交聯劑例如可列舉：異氰酸酯系交聯劑、環氧系交聯 剑、金屬螯合物系交聯劑、氮丙啶系交聯劑、胺基樹脂等。 就通用性方面而言，交聯劑較佳為異氰酸酯系交聯 劑。具體而言可使用多元異氰酸酯化合物，例如：2,4•曱苯 一異氰酸酯、2,6-曱苯二異氰酸酯、丨，3_苯二曱基二異氰酸 酉曰、1，4-二甲苯二異氰酸酯、二苯基甲烷_4,4，·二異氰酸酯、 苯基曱烷-2，4'-二異氰酸酯、3-甲基二苯基甲烷二異氰酸 ft匕 ^ /、亞甲基二異氰酸酯、異佛爾酮二異氰酸酯、二己 13 201118146 基曱烧-4,4’_二異氰酸酯、二環己基甲烷_2,4，_二異氰酸醋、 離胺酸異氰酸醋（lySine iS0Cyanate)等。 另外’黏著劑中亦可於不損及本發明之目的之範圍 内’根據需要含有各種添加成分。 黏著劑可使用放射線硬化型或加熱發泡型之黏著劑。 作為放射線硬化型之黏著劑，可使用藉由紫外線 '電子束 等而硬化後，剝離時變得容易剝離之黏著劑，所謂加熱發 泡型之黏著劑，可使用藉由加熱，利用發泡劑或膨脹劑而 變知容易剝離之黏著劑。作為放射線硬化型黏著劑，例如 可較佳地使用曰本專利特公平號公報、日本專利特 開平7-135189號公報等中記載之黏著劑，但並不限定於咳 等。 … 於本發明中，較佳為使用紫外線硬化型黏著劑。此時， 該紫外線硬化型黏著劑只要具有藉由放射線而硬化且形成 為立體網狀之性質即可，例如可於f通之橡膠系或丙稀酸 系之感壓性樹脂成分中，調配分子中具有至少兩個光聚合 性碳-碳雙鍵的低分子量之光聚合性化合物（以下稱為光聚 合性化合物）以及光聚合起始劑。 作為光聚合性化合物，例如可列舉：三羥曱基丙烷三 稀酸西曰四經甲基曱烧四丙稀酸醋、季戍四醇三丙稀酸 酿、季戊四醇四丙烯酸酯、-泰# ^ 00 ^ 一 —季戊四酵早羥基五丙烯酸酯' —季戊四醇六丙烯酸酯、T-*-^ 丨，4·丁一醇二丙烯酸酯、1，6-己二 醇一丙稀酸S旨 '聚乙二醇-兩卩泰雜. 奸—丙烯酸酯'有機聚矽氧烷組成 物 '市售之低聚酯丙烯酸酯、 09 丙烯酸胺基曱酸酯等。 作為構成黏著劑之樹脂土、八 | W月曰成分，亦可使用具有光硬化性 14 201118146 碳-碳雙鍵之樹脂。例如可列舉：相對於主鏈之重複單元具 有光硬化性碳-碳雙鍵，且具有官能基之丙烯酸系共聚物及/ 或曱基丙稀酸糸共聚物（al)與具有可與該官能基反應之官 能基的化合物（a2 )進行反應而獲得者。上述相對於主鏈之 重複單元具有放射線硬化性碳-碳雙鍵，且具有官能基之丙 烯酸系共聚物及/或曱基丙烯酸系共聚物（al )，例如可使 具有放射線硬化性碳-碳雙鍵之丙稀酸烧基酯及/或曱基丙 烯酸烷基酯等單體（al-Ι )與具有官能基之單體（al_2 )進 行共聚合而獲得。 作為單體（a 1 -1 )’例如可列舉：烷基酯之烷基之碳數 為6〜12的（曱基）丙烯酸烷基酯（例如，丙烯酸己酯、丙稀 酸正辛酯、丙烯酸異辛酯、丙烯酸_2·乙基己酯、丙烯酸十 二烷基酯、丙烯酸癸酯）。另外可列舉：烷基酯之烷基之 碳數為5以下的（甲基）丙烯酸烷基酯（例如，丙烯酸戊酯、 丙烯酸正丁酯、丙烯酸異丁酯、丙烯酸乙酯、丙烯酸甲酯 或與該等相同之甲基丙烯酸酯等）。 作為單體（a 1 -2 )所具有之官能基，可列舉：羧基、羥 基、胺基、環狀酸酐基、環氧基、異氰酸酯基等。作為單 體（a 1 -2 )之具體例’例如可列舉：丙烯酸、甲基丙烯酸、 肉桂酸、衣康酸、反丁烯二酸、鄰苯二甲酸、丙烯酸_2_羥 基烧基i曰類、甲基丙稀酸·2·經基烧基酯類、乙二醇單丙婦 酸醋類、乙二醇單甲基丙烯酸酯類、Ν_羥甲基丙烯醯胺、 Ν-羥曱基曱基丙烯醯胺、烯丙醇、丙烯酸—N•烷基胺基乙酯 類、甲基丙烯酸-Ν-烷基胺基乙酯類、丙烯醯胺類、甲基丙 烯醯胺類、順丁烯二酸酐、衣康酸酐、反丁烯二酸酐、鄰The minimum value of the Hz loss coefficient is 〇2〇 or more, which can attenuate the vibration of the wafer generated during cutting to prevent chipping. The loss coefficient of the adhesive sheet for wafer bonding is 〇 2 〇 or more, preferably 0.22 or more. If the loss coefficient is too small, the vibration caused by the cutting blade cannot be reduced. It becomes difficult to prevent chipping. Generally, the loss coefficient of the adhesive sheet for wafer bonding is 0.40 or less. In the adhesive sheet for wafer bonding of the present invention, it is preferred that the base resin film has a 5% modulus of 4.0 to 7 〇 MPa and a tear strength of 1 〇〇 N/mm or more. The 5% modulus of the base resin film can be determined by measuring the stress at 5 / 〇 strain in accordance with JIS κ 7127/2/3 。. When the modulus and the tear strength of the base resin film are within this range, even if a sufficient tensile stress is applied in the stretching step, the base resin film does not tear, and the wafer interval can be uniformly expanded. When the 5% modulus of the base resin film is too large, the wafer bonding adhesive sheet of the present invention may not sufficiently expand the wafer interval in the step of extending the gap between the expanded wafers 14 shown in FIG. bad. If the 5% modulus of the base resin film is too small, the adhesive sheet for wafer bonding may be extended under low stress, which may hinder the operation. The 5% modulus of the base resin film is preferably 4.5 to 6.5 MPa, more preferably 5.0 to 6.5 MPa. The 5% modulus of the MD direction (Machine Direction' longitudinal direction) and the td direction (Traverse Direction, 9 201118146 杈 direction) of the base resin film of the wafer bonding adhesive sheet of the present invention is preferably 4.0 to 7.0 MPa, The interval between the wafers can be uniformly expanded in the extending step. In the adhesive sheet for wafer bonding of the present invention, the base resin film has a tear strength of 100 N/mm or more. The tear strength of the base resin film can be obtained by JISK7128-3. The adhesive sheet for wafer bonding in which the tear strength of the base resin film is less than 1 〇〇N/mm sometimes breaks during the stretching step. The tearing strength of the base resin film is less likely to tear, but it is usually sufficient if it is i 5 〇 or less, and the tear strength of the base resin film is preferably ι 〇 N/mm or more. Good for 115 N/mm or more. Further, in the case where the stretching step is performed by the expander 16 shown in FIG. 4, the tear strength of the base resin film of the base resin film of the wafer-bonding adhesive sheet of the present invention in the MD direction and the TD direction is higher. Good for i〇〇N/mm or more. The base resin film can be used without any particular limitation as long as it has excellent heat resistance to wafer cutting by a blade in the dicing step. In the present invention, the resin of the base resin film includes a resin which can be formed into a sheet shape such as a plastic, a thermoplastic elastomer or a rubber. The resin may, for example, be selected from the group consisting of "styrene-hydrogenated isoprene-styrene block copolymer (hereinafter referred to as: SEPS)), styrene-isopredil- styrene copolymer ( Hereinafter, it is called "SIS"), a styrene-hydrogenated butadiene-styrene copolymer (hereinafter referred to as), and a styrene-hydrogenated isoprene-butylene styrene copolymer (hereinafter referred to as "SEEPS"). At least one of them. The base resin film ι may be a single layer or a multiple layer, and may be a different material for the double layer, and # may be the same material, preferably at least one layer of the layer constituting the base resin film is selected from the group consisting of At least one of the above SEPS, SIS, SEBS' SEEPS.曰2 is selected from at least one of the sEPS, SIS, SEBS, and SEEPS layers. 201118146 can also be used in layers. The layer composed of at least one selected from the group consisting of SEPS, SIS, SEBS, and SEEPS may be a resin composition formulated with a polypropylene, low density polyethylene (LDPE), and a low bond. Density polyethylene (LLDPE, Linear Low Density Polyethylene), ethylene-propylene copolymer, propylene copolymer, ethylene/propylene-diene copolymer sulfide, polybutene, polybutadiene, polydecylpentene, ethylene -vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene-(mercapto)methyl acrylate copolymer, ethylene-ethyl (meth) acrylate copolymer, polyethylene, ethylene-vinyl acetate Ester copolymer, ethylene-vinyl chloride·ethylene acetate copolymer, polyglycolic acid, polyamine, ionic polymer, nitrile rubber, butyl rubber, stupid ethylene isoprene rubber, styrene Diene rubber, natural rubber and its hydride or modified substance. In the present invention, as an ionic polymer, a resin obtained by intermolecular bonding of a metal ion such as sodium or zinc to a molecule of an ethylene-mercaptoacrylic acid co-tomer or an ethylene-acrylic acid copolymer. Metal ions are preferred. At least one of the layers constituting the base resin film is preferably a resin composition containing the polypropylene resin as the component (A) and the component (B) selected from the group consisting of styrene-hydrogenation. Pentadiene-styrene block copolymer, styrene-isoprene-styrene copolymer, styrene-hydrogenated butadiene-styrene copolymer and styrene·hydrogenated isoprene_butadiene· At least one of the styrene copolymers. & Polypropylene resin includes propylene homopolymer, ethylene-propylene copolymer, ethylene propylene-diene copolymer sulfide or other propylene copolymer, etc., in the case of a copolymer, a random copolymer Any one of the embedded f and the total of one can be selected. In the present invention, the blending amount of the polypropylene resin of the component (A) and the component (b) selected from at least one of SEPS, SIS, SEBS and SEEPS can be appropriately determined in consideration of the balance between the film strength and the vibration damping property. It is preferably one part by mass of the polypropylene resin of the component (A), and at least one of the components (b) selected from the group consisting of SEPS, SIS, SEBS and SEEPS is 30 to 100 parts by mass. When at least one of the components (B) selected from the group consisting of SEPS, SIS, SEBS, and SEEPS is too small with respect to 1 part by mass of the component (A), sufficient vibration damping property may not be obtained, and the chipping suppression effect is small. . When the amount of the component (B) selected from at least one of SEps, SIS, SEBS and SEEPS is too large with respect to 100 parts by mass of the component (A), the film itself becomes excessively soft and hinders the operation. When the polypropylene resin as the component (A) and the styrene-hydrogenated isoprene-styrene block copolymer styrene-isoprene-styrene copolymer are contained as the component (b), When at least one of the styrene-hydrogenated butadiene-styrene copolymer and the styrene-hydrogenated isoprene-butadiene-styrene copolymer is used, the component (A) is preferably used as the continuous phase. b) The component is a dispersed phase, and the dispersed phase particles have an average diameter of a resin dispersion of 丨5 nm or more. The upper limit of the particles of the dispersed phase is not particularly limited, and if it is too large, the film strength is locally uneven, and it is preferably 25 nm or less. In the resin dispersion in which the component (A) is the continuous phase and the component (B) is the dispersed phase, the molecular chain or the side chain of the component (B) is stretched during the stress application or the recovery thereof. Energy loss due to collision. When the average diameter of the dispersed phase of the component (B) is too small, the number of adjacent molecular chains is small, so that energy loss for suppressing chipping may not be sufficiently obtained, and it is difficult to attenuate the vibration of the wafer generated during dicing. 12 201118146 For the surface of the base resin film that is in contact with the adhesive layer, corona treatment may be applied to improve the adhesion, or another layer such as an undercoat layer may be provided. The thickness of the base resin film 1 is not particularly limited, and is preferably 3 〇 2 〇〇 quot quot m z z z z z z z z z z z z z z z z z z 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材In the case, the thickness of the layer containing the above SEPS' SIS, SEBS or SEEPS is preferably 5 to 1 〇〇β m. The adhesive layer can be formed using various adhesives. The resin component used in such an adhesive is not limited at all. For example, a rubber-based polymer such as α-natural rubber or various synthetic rubbers, or an adhesive such as an acrylic, polyoxyn, or polyethylene ether can be used as the base polymer. In the #, it is preferred to use an acrylic polymer such as a polyalkyl (meth) acrylate, a copolymer of a (meth) acrylate group and other unsaturated monomers copolymerizable therewith. A crosslinking agent may be formulated in the resin components to impart cohesive force. By using a crosslinking agent corresponding to a functional group in the resin component and having a functional group reactive with the functional group, the cohesive force can be imparted to the adhesive, and the initial adhesive force can be set. For the required value. Examples of the crosslinking agent include an isocyanate crosslinking agent, an epoxy crosslinking sword, a metal chelate crosslinking agent, an aziridine crosslinking agent, and an amine based resin. In terms of versatility, the crosslinking agent is preferably an isocyanate crosslinking agent. Specifically, a polyvalent isocyanate compound can be used, for example, 2,4 phthalic acid monoisocyanate, 2,6-nonyl benzene diisocyanate, hydrazine, 3 - benzodiazepine diisocyanate, 1,4-xylene Diisocyanate, diphenylmethane_4,4,diisocyanate, phenyl nonane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate ft匕^, methylene di Isocyanate, isophorone diisocyanate, dihexyl 13 201118146 based terpene-4,4'-diisocyanate, dicyclohexylmethane 2,4,_diisocyanate, lysine isocyanate (lySine) iS0Cyanate) and so on. Further, the "adhesive agent may be contained within a range not impairing the object of the present invention" as needed. As the adhesive, a radiation hardening type or a heat foaming type adhesive can be used. As the radiation-curing type adhesive, an adhesive which is easily cured by peeling off by an ultraviolet ray electron beam or the like and which is easily peeled off during peeling can be used. The heat-foaming type adhesive can be used by heating and using a foaming agent. Or an expander to become an adhesive that is easily peeled off. As the radiation-curable adhesive, for example, an adhesive described in Japanese Patent Laid-Open Publication No. Hei 7-135189, and the like, is not limited to cough. In the present invention, it is preferred to use an ultraviolet curable adhesive. In this case, the ultraviolet curable adhesive may have a property of being cured by radiation and formed into a three-dimensional network. For example, the adhesive compound may be blended in a rubber-based or acrylic-based pressure-sensitive resin component. A low molecular weight photopolymerizable compound (hereinafter referred to as a photopolymerizable compound) having at least two photopolymerizable carbon-carbon double bonds and a photopolymerization initiator. Examples of the photopolymerizable compound include trishydroxypropyl propane trisuccinate, tetramethyl sulphate, tetrapropyl sulphuric acid, quaternary tetral triacetate, pentaerythritol tetraacrylate, and Thai. ^ 00 ^ I-pentaerythra early hydroxypentaacrylate' - pentaerythritol hexaacrylate, T-*-^ 丨, 4 · butyl alcohol diacrylate, 1,6-hexanediol-acrylic acid 'Polyethylene glycol-two 卩泰杂. 奸-acrylate 'organic polyoxane composition' commercially available oligoester acrylate, 09 urethane phthalate and the like. As the resin soil constituting the adhesive, the resin of the photocurable 14 201118146 carbon-carbon double bond can also be used. For example, an acrylic copolymer having a photocurable carbon-carbon double bond with respect to a repeating unit of the main chain, and a functional group-based acrylic copolymer and/or a mercaptopropionate copolymer (al) may be used. The compound (a2) having a functional group of the base reaction is obtained by a reaction. The above-mentioned acrylic copolymer and/or mercaptoacrylic copolymer (al ) having a radiation-curable carbon-carbon double bond with respect to the repeating unit of the main chain and having a functional group, for example, may have a radiation curable carbon-carbon A monomer (al-Ι) such as a double bond of an alkyl acrylate and/or an alkyl methacrylate is obtained by copolymerization with a monomer (al_2) having a functional group. The monomer (a 1 -1 )' may, for example, be an alkyl (meth) acrylate having an alkyl group of 6 to 12 (for example, hexyl acrylate or n-octyl acrylate). Isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate). Further, an alkyl (meth)acrylate having an alkyl group of an alkyl ester of 5 or less (for example, amyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate or The same methacrylate, etc.). The functional group of the monomer (a 1 - 2 ) may, for example, be a carboxyl group, a hydroxyl group, an amine group, a cyclic acid anhydride group, an epoxy group or an isocyanate group. Specific examples of the monomer (a 1 -2 ) include, for example, acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, and acrylic acid 2-hydroxyl group. , methacrylic acid · 2 · carbyl esters, ethylene glycol monoglycolic acid vinegar, ethylene glycol monomethacrylate, hydrazine hydroxymethyl propylene amide, hydrazine - hydroxy hydrazine Alkyl acrylamide, allyl alcohol, acrylic acid-N-alkylaminoethyl ester, methacrylic acid-hydrazine-alkylaminoethyl ester, acrylamide, methacrylamide, cis Butenedic anhydride, itaconic anhydride, fumaric anhydride, neighbor
S 15 201118146 丙烯酸縮水甘油跪、曱基丙烯酸縮水甘油酷、 ==Γ㈣、聚異氰酸酷化合物之-部分異氰酸醋 i甲酸二基以及具有放射線硬化性碳，碳雙鍵之單體胺 基甲酸酯化所得者等。 =述（a2)之官能基為緩基或環狀酸肝基之情形時， 作為（a 1 )所具有之 異氰酸醋基等。另：：2可列舉:經基、環氧基、 作為“"所具有…二：能基為經基之情形時， 冑之“匕基’例如可列舉：環狀酸酐基、異 二基等。於（a2)之官能基為胺基之情形日夺，作為⑺) 於;之官能基’例如可列舉：環氧基 '異氰酸酯基等。 之官能基為環氧基之情形時，作為（al)所具有之 g月b 土 ％如可列舉：m基、環狀酸if基、胺基等。 ,U卜線硬化型黏著劑之情形時，藉由於黏著劑中混 ^聚合^劑’可減少紫外線照射之聚合硬化時間以及 紫外線照射量。 …作為此種光聚合起始劑，具體而言可列舉：安息香、 2息香甲越、安息香乙醚、安息香異丙驗、节基二苯基硫_、 一硫化四 f 基秋蘭姆（tetramethylthiuram monosuIfide)、偶 氮雙異：腈、二笨偶醯'雙乙醒(d—)、々_氣蒽酿等。 '黏者劑層之厚度並無特別限制，較佳為4〜30#m，特 佳為5〜25"〇1。 本發明之晶圓貼合用黏著片可不於黏著劑層上進而設 置接著劑層而用作切割膠帶。另外’當本發明之黏著劑層 為可兼用於切割黏晶之黏著劑時’可用作切割黏晶膠帶。 此時’於切割步驟結束後，將黏著劑層與基材樹脂膜之間 16 201118146 剝離’使用附著有黏著劑層之晶片，之後可直接黏接。 另外，本發明之晶圓貼合用黏著片亦可為在黏著劑層 上亡至j晶圓貼合預定部分積層有接著劑層者。此時，於 接者劑：上貼合晶圓並切割後選取所獲得之晶片時，接著 劑層附著於晶片上，可用作從曰u 夺日曰片固定於基板或導線架時 亡接著劑。接著劑層可使用切割黏晶片通常使用之膜狀接 考劑較佳者可使用丙稀酸系點接著劑，環氧樹脂潘樹脂/ ::酸系樹脂之混合系黏接著劑等。接著劑層之厚度可適 且设定，較佳為5〜1 00 v m左右。 八構成接著劑層之樹脂組成物具有可於常溫下與晶圓貼 &且可進行切割加工之黏著性，並且於切割加工結束後可 :黏著劑層⑽’之後藉由加熱而表現接著性，發揮黏晶 /之作用。此時之加熱並無特別限制’較佳為於4〇〜_ c ’更佳為60〜80〇c下進行。 可將晶圓貼合於本發明之晶圓貼合用黏著片上，進行 ^ 2〜^所示之晶圓之切割及選取。於使用本發明之晶圓 ' 。用黏者片的晶圓之加工方法中’較佳為不切入至美材 ^脂膜，原、因在於可減小切割刀片之切削阻力，順㈣切 削曰m減少碎裂。更佳為進行之最大限度 點著劑層之厚度之2/3左六森v 氣 ‘、 職之左右為止。為不切人至基材樹脂膜， 歹，如可根據所使用之切割裝置之使用指南而適宜 割裝置的切入深度之設定。 u刀 本發明中所使用之裸晶圓並無特別限定， m . 曰无則使 用之任忍之裸晶圓中適宜選擇使用。 [實施例] 17 S- 201118146 以下，根據實施例更詳細地說明本發明，但是本發明 並不限定於該等實施例。再者，實施例及比較例中所使用 之黏者劑、基材構成樹脂如下所述。 (黏著劑組成物1 ) 於丙烯酸系基礎聚合物（由丙烯酸-2-乙基己醋、丙稀 酸甲酯及丙烯酸-2-羥基乙酯所構成之共聚物，重量平均分 子里為20萬，玻璃轉移點= -351) 1〇〇質量份中，添加異 氰酸酯系交聯劑（曰本聚胺酯（Nippon polyurethane )公司 製造’商品名：Coronate L ) 3質量份、作為光聚合性化合 物之四羥甲基甲烷四丙烯酸酯1〇質量份、作為光聚合起始 劑之α -羥基環己基苯基酮1質量份，混合而獲得黏著劑組 成物1。 (黏著劑組成物2) 使由丙烯酸-2-乙基己自旨（69 mol% )、丙烯酸-2-經基 乙酯（29 mol% )及曱基丙烯酸（2 mol% )所構成之共聚物 的丙烯酸-2-羥基乙酯側鏈末端之羥基，與2-曱基丙稀醯氧 基乙基異氰酸酯之異氰酸酯基反應，獲得具有光硬化性碳_ 碳雙鍵之丙烯酸系共聚物。於該共聚物1 〇〇質量份中，添 加異氰酸酯系交聯劑（日本聚胺酯公司製造，商品名： Coronate L) 2質量份、作為光聚合起始劑之α -羥基環己基 苯基酮1質量份，混合而獲得黏著劑組成物2。 [實施例1〜3、6、7及比較例1、2 ] 於實施例1〜3、7及比較例1中，將苯乙烯-氫化異戊 一稀-本乙稀嵌段共聚物（SEPS) (Kuraray公司製造，商 品名「Septon KF-2 104」）及均丙稀（pp )(宇部興產公司 18 201118146 製造，商品名「J-娜」）以表1所示之調配比混合，使用 雙軸混練機，於約靖下藉由膜擠出成形而加工，製造厚 度為100// m之基材樹脂膜。 於實施例6中，首先準備苯乙稀·氣化異戊二稀-苯乙稀 嵌段共聚物（SEPS) (Kuraray公司製造，商品名「Sept〇n KF-2104」）之30_之樹脂膜。以該樹脂膜作為中間層， 於其兩側，形成相對於均丙烯（pp)(宇部興產公司製造， 商品名「J-105G」）100質量份’苯乙烯_氫化異戍二烯·苯 乙稀嵌段共聚物（SEPS )( KUraray公司製造，商品名「 KF-2104」）為30質量份之樹脂組成物層各35…於約 2〇〇t下進行膜擠出成形而獲得三層構成之厚度為陶爪 之基材樹脂膜。表1中表示基材樹脂膜中間層以外之層的 樹脂組成物之調配比。 於比較例2中，使用作為離子聚合物的Dup〇nt Mitsui 公司製造之商品名「Himiian 1554」，於約 200 C下藉由膜擠出成形而加工，製造厚度為之基 材樹脂膜》 於所f得之基材樹脂膜之一表面將上述黏著劑組成物 1塗覆成厚度10 " m ’然後熟化，藉此形成黏著劑層，製造 實把例1 3、6、7及比較例1、2之晶圓貼合用黏著片。 [實施例4、5 ] 除代替上述笨乙烯-氫化異戊二烯-苯乙烯嵌段共聚物 (SEPS ) ’而分別以表i所示之調配比混合以下共聚物以 外=與實施例1相同之方式製造晶圓貼合用黏著片。 苯乙烯-氫化丁二烯-苯乙烯共聚物（SEBS) 201118146 (Kuraray公司製造，商品名「Sept〇11 8104」） 苯乙烯-氫化異戊二烯/ 丁二烯-苯乙烯共聚物（SEEPS) (Kuraray公司製造，商品名「Sept〇n 4〇33」） [實施例8] 於實施例1中所製作之基材樹脂膜之一表面，將上述 黏著劑組成物2塗覆成厚度丨〇 # m，然後熟化，藉此形成黏 著劑層’製造實施例8之晶圓貼合用黏著片。 [實施例9] <黏晶膜之製作> 調配作為環氧樹脂之曱酚酚醛清漆型環氧樹脂（環氧 當量為197，分子量為12〇〇，軟化點為7〇°c ) 5〇質量份、 作為破烧偶合劑之7 -巯基丙基三甲氧基矽烷1 5質量份、 7-脲基丙基二乙氧基矽烷3質量份 '及平均粒徑為16 nm 之二氧化矽填料30質量份，添加環己酮並攪拌混合，然後 使用珠磨機混練90分鐘。於其中添加丙烯酸系樹脂（質量 平均分子量：80萬，玻璃轉移溫度為_17t： ) 1〇〇質量份、 Curezol 2PZ (四國化成（股）製造，商品名：2苯基咪唑） 2.5質量份，攪拌混合後真空脫氣，獲得黏晶膜用接著劑組 成物。將該接著劑組成物塗佈於厚度25以m且經脫模處理 之聚對苯二甲酸乙二酯膜上，於n〇〇c加熱乾燥丨分鐘形 成膜厚為20 ym之塗膜，製作黏晶膜。 <晶圓貼合用黏著片之製作> 將所獲得之黏晶膜貼合於與實施例丨為相同構成之黏 著劑層上，製造於黏著劑層上形成有黏晶獏之接著劑層的 實施例9之晶圓貼合用黏著片。 20 201118146 於實施例1〜9及比較例丨、2之晶圓貼合用黏著片之 黏著劑層或接著劑層上，貼合直徑6英吋、厚度35〇 之表面蒸鍍有金屬之矽晶圓，使用切割裝置（DISC〇公司 製ie，DAD-340 )，以晶片尺寸為5 mm見方之方式進行切 割。切割條件如下，旋轉圓刀轉速：4〇〇〇〇 rpm，切削速度： 100 mm/s，切削水流量為2〇 mL。另外，切割時，係以旋轉 圓刀於黏著片中之切入深度為3〇//m之方式進行。 以如下方式進行各特性評價，結果示於表1。 (損失係數） 自實施例1〜9及比較例丨、2之晶圓貼合用黏著片切 割出寬度5 mm X長度1〇 mm之試片。將該試片固定於動 態黏彈性測定裝置（UBM公司製造，Rheogel-E4000 )之支 持用爽具中，於溫度23 C、頻率400〜900 Hz下進行測定， 獲得该範圍内之損失係數之最小值。另外，將自實施例丄 〜7及比較例卜2之晶圓貼合用黏著片切割出的寬度5mm X長度10 mm之試片同樣地固定於上述動態黏彈性測定裝 置之支持用夾具中，於頻率650 Hz、溫度15〜4(rc下進行 測定，獲得該範圍内之損失係數之最小值。 (5%模數） 使用實施例1〜9及比較例1、2之晶圓貼合用黏著片 中所用之基材樹脂膜，依據JIS K7127/2/300製作試片， 定5%模數。將測定數η = 5之平均值作為試驗結果。 (撕裂強度） 使用實施例1〜9及比較例1、2之晶圓貼合用點著片 中所用之基材樹脂膜，依據JIS Κ7128-3盤竹1 μ I 1乍忒片’測定撕 21 S- 201118146 裂強度。將測定數n = 5之平均值作為試驗結果。 (碎裂性） 將晶圓安裝於實施例1〜9及比較例1、2之晶圓貼合 用黏著片上進行切割。然後實施紫外線照射（500 mJ/m2)， 自1片晶圓中隨機取出50個晶片，使用顯微鏡（100〜200 倍）測定晶片背面（黏著面）之各邊的最大碎裂之大小， 計算出全部值之平均值。 (延伸性） 將晶圓安裝於實施例1〜9及比較例1、2之晶圓貼合 用黏著片上進行切割。然後實施紫外線照射（50〇 mJ/m2 )， 使用延伸裝置（Technovisi〇n公司製造，商品名「ΤΕΧ-2 1 8G」） 延伸20 mm ’評價黏著片有無斷裂。設測定數η = 30，將一 次也未曾斷裂之情形評價為◎，將測定數η：= 30中，斷裂 之樣品數未達η= 3之情形評價為〇，將斷裂3以上之 情形評價為X。 22 201118146S 15 201118146 Glycidyl acrylate, glycidyl methacrylate, == Γ (4), polyisocyanurate compound - part of isocyanuric acid icarboxylic acid diyl and monomeric amine with radioactive carbon, carbon double bond The resulting product of the carboxylic acid esterification. When the functional group of (a2) is a slow group or a cyclic acid liver group, it is an isocyanate group or the like which is contained in (a1). Further:: 2 may be exemplified by a cyclic group, an epoxy group, or a "2": when the energy group is a thiol group, the sulfhydryl group may, for example, be a cyclic acid anhydride group or a heterodiyl group. Wait. In the case where the functional group of (a2) is an amine group, the functional group of (7)) may, for example, be an epoxy group isocyanate group or the like. When the functional group is an epoxy group, the g month b soil % which is (al) may, for example, be an m group, a cyclic acid ion group or an amine group. In the case of the U-line hardening type adhesive, the polymerization hardening time and the ultraviolet irradiation amount of the ultraviolet irradiation can be reduced by the polymerization agent in the adhesive. As such a photopolymerization initiator, specifically, benzoin, 2 benzoin, benzoin ethyl ether, benzoin isopropyl, benzyl diphenyl sulphate, tetramethylthiuram MonosuIfide), azo double heterogeneity: nitrile, two stupid 醯 'double awake (d-), 々 _ gas brewing and so on. The thickness of the adhesive layer is not particularly limited, and is preferably 4 to 30 #m, particularly preferably 5 to 25 "〇1. The adhesive sheet for wafer bonding of the present invention can be used as a dicing tape without providing an adhesive layer on the adhesive layer. Further, when the adhesive layer of the present invention is an adhesive which can be used for cutting a die bond, it can be used as a dicing adhesive tape. At this time, after the end of the dicing step, the adhesive layer and the base resin film are peeled off from the surface of the film, and the wafer to which the adhesive layer is attached is used, and then directly bonded. Further, the adhesive sheet for wafer bonding of the present invention may be one in which an adhesive layer is deposited on the adhesive layer to a predetermined portion of the wafer bonding. At this time, when the wafer is attached and diced, and the obtained wafer is selected, the adhesive layer is attached to the wafer, and can be used as a squeezing film to be fixed on the substrate or the lead frame. Agent. As the subsequent layer, a film-like test agent which is usually used for cutting a sticky wafer can be used. Preferably, an acrylic-based point-adhesive agent, an epoxy resin-pan resin/:-acid resin-based mixed adhesive or the like can be used. The thickness of the layer of the agent may be appropriately set and is preferably about 5 to 100 m. The resin composition constituting the adhesive layer has adhesion to the wafer at normal temperature and can be subjected to a cutting process, and after the cutting process is completed, the adhesive layer (10)' can be expressed by heating after heating. , play the role of the sticky crystal /. The heating at this time is not particularly limited, and it is preferably carried out at 4 〇 to _ c ' more preferably 60 to 80 〇 c. The wafer can be bonded to the wafer bonding adhesive sheet of the present invention to perform cutting and selection of the wafer shown in ^2~^. For use with the wafer of the present invention'. In the processing method of the wafer using the adhesive sheet, it is preferable not to cut into the US material fat film, because the cutting resistance of the cutting blade can be reduced, and the chipping is reduced by 曰m to reduce chipping. It is better to carry out the maximum point of the thickness of the agent layer 2 / 3 left Liu Sen v gas ‘, around the job. In order to prevent the substrate from being smeared to the substrate, it is possible to adjust the plunging depth of the cutting device according to the use guide of the cutting device to be used. U-knife The bare wafer used in the present invention is not particularly limited, and m is not suitable for use in any of the bare wafers. [Embodiment] 17 S-201118146 Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to the examples. Further, the adhesive agent and the substrate constituting resin used in the examples and the comparative examples are as follows. (Adhesive Composition 1) Acrylic base polymer (copolymer composed of 2-ethylhexyl acrylate, methyl acrylate, and 2-hydroxyethyl acrylate), with a weight average molecular weight of 200,000 , glass transition point = -351) 3 parts by mass of an isocyanate-based crosslinking agent (trade name: Coronate L, manufactured by Nippon Polyurethane Co., Ltd.) in an amount of 3 parts by mass, and tetrahydroxyl as a photopolymerizable compound 1 part by mass of methyl methane tetraacrylate and 1 part by mass of α-hydroxycyclohexyl phenyl ketone as a photopolymerization initiator were mixed to obtain an adhesive composition 1. (Adhesive Composition 2) Copolymerization consisting of 2-ethylhexyl acrylate (69 mol%), 2-ethylidene acrylate (29 mol%), and methacrylic acid (2 mol%) The hydroxyl group at the terminal end of the 2-hydroxyethyl acrylate is reacted with an isocyanate group of 2-mercaptopropyloxyethyl isocyanate to obtain an acrylic copolymer having a photocurable carbon-carbon double bond. 2 parts by mass of an isocyanate-based crosslinking agent (manufactured by Nippon Polyurethane Co., Ltd., trade name: Coronate L), and a mass of α-hydroxycyclohexyl phenyl ketone 1 as a photopolymerization initiator were added to 1 part by mass of the copolymer. The mixture was mixed to obtain an adhesive composition 2. [Examples 1 to 3, 6, and 7 and Comparative Examples 1 and 2] In Examples 1 to 3, 7 and Comparative Example 1, a styrene-hydrogenated isoprene-ethylidene block copolymer (SEPS) was used. (manufactured by Kuraray Co., Ltd., trade name "Septon KF-2 104") and propylene (pp) (manufactured by Ube Industries, Inc., 18 201118146, trade name "J-Na"), mixed with the blending ratio shown in Table 1. A substrate resin film having a thickness of 100 / / m was produced by a film extrusion molding using a biaxial kneading machine. In Example 6, first, a resin of 30% of styrene-gasified isoprene-styrene block copolymer (SEPS) (manufactured by Kuraray Co., Ltd., trade name "Sept〇n KF-2104") was prepared. membrane. The resin film was used as an intermediate layer, and 100 parts by mass of 'styrene_hydrogenated isoprene-benzene was formed on the both sides thereof with respect to propylene (pp) (product name "J-105G" manufactured by Ube Industries, Ltd.). Ethylene block copolymer (SEPS) (manufactured by KUraray Co., Ltd., trade name "KF-2104") is a resin composition layer of 30 parts by mass each of 35. Film extrusion molding is carried out at about 2 〇〇t to obtain three layers. The thickness of the composition is a base resin film of a ceramic claw. Table 1 shows the blending ratio of the resin composition of the layer other than the intermediate layer of the base resin film. In Comparative Example 2, the product name "Himiian 1554" manufactured by Dup〇nt Mitsui Co., Ltd., which is an ionic polymer, was processed by film extrusion molding at about 200 C to produce a substrate resin film having a thickness of The surface of one of the base resin films obtained by applying the above-mentioned adhesive composition 1 to a thickness of 10 " m ' and then aging, thereby forming an adhesive layer, and manufacturing examples 1 3, 6, and 7 and comparative examples 1, 2 wafer bonding adhesive sheets. [Examples 4 and 5] Except for the above-mentioned stupid ethylene-hydrogenated isoprene-styrene block copolymer (SEPS)', the following copolymers were mixed at the blending ratios shown in Table i, respectively, and were the same as in Example 1. The method of manufacturing an adhesive sheet for wafer bonding. Styrene-hydrogenated butadiene-styrene copolymer (SEBS) 201118146 (manufactured by Kuraray, trade name "Sept〇 11 8104") styrene-hydrogenated isoprene/butadiene-styrene copolymer (SEEPS) (manufactured by Kuraray Co., Ltd., trade name "Sept〇n 4〇33") [Example 8] On the surface of one of the base resin films produced in Example 1, the above-mentioned adhesive composition 2 was coated to a thickness 丨〇 #m, and then aging, thereby forming an adhesive layer'. The wafer-attached adhesive sheet of Example 8 was produced. [Example 9] <Production of a die-bonding film> A non-phenolic novolac type epoxy resin (epoxy equivalent: 197, molecular weight: 12 Å, softening point: 7 〇 ° C) was prepared as an epoxy resin. 〇 parts by mass, 1 part by mass of 7-mercaptopropyltrimethoxydecane as a breaker coupling agent, 3 parts by mass of 7-ureidopropyldiethoxydecane, and cerium oxide having an average particle diameter of 16 nm 30 parts by mass of the filler, cyclohexanone was added and stirred, and then kneaded using a bead mill for 90 minutes. Acrylic resin (mass average molecular weight: 800,000, glass transition temperature: _17t: ) 1 part by mass, Curezol 2PZ (manufactured by Shikoku Chemicals Co., Ltd., trade name: 2 phenylimidazole) 2.5 parts by mass After stirring and mixing, the mixture was degassed under vacuum to obtain an adhesive composition for the adhesive film. The adhesive composition was applied onto a polyethylene terephthalate film having a thickness of 25 m and subjected to release treatment, and dried by heating at n〇〇c for a film thickness of 20 μm to prepare a film. Mold film. <Production of Adhesive Sheet for Wafer Bonding> The obtained adhesive film was bonded to an adhesive layer having the same structure as that of Example ,, and an adhesive for forming a die bond was formed on the adhesive layer. The adhesive sheet for wafer bonding of Example 9 of the layer. 20 201118146 On the adhesive layer or the adhesive layer of the adhesive sheet for wafer bonding of Examples 1 to 9 and Comparative Examples 2 and 2, a metal having a diameter of 6 inches and a thickness of 35 Å was bonded to the surface. The wafer was cut using a cutting device (ie DDA-340 manufactured by DISC Corporation) in a manner of a wafer size of 5 mm square. The cutting conditions were as follows: rotary knife speed: 4 rpm, cutting speed: 100 mm/s, and cutting water flow rate of 2 〇 mL. Further, at the time of cutting, the cutting depth of the rotary knife in the adhesive sheet was 3 〇 / / m. Each characteristic evaluation was performed in the following manner, and the results are shown in Table 1. (Loss factor) Test pieces having a width of 5 mm and a length of 1 mm were cut out from the adhesive sheets for wafer bonding of Examples 1 to 9 and Comparative Examples 2 and 2. The test piece was fixed in a support for use in a dynamic viscoelasticity measuring apparatus (Rheogel-E4000, manufactured by UBM), and measured at a temperature of 23 C and a frequency of 400 to 900 Hz to obtain a minimum loss coefficient in the range. value. Further, the test pieces having a width of 5 mm and a length of 10 mm which were cut out from the adhesive sheets for wafer bonding of Examples 7-1 to 7 and Comparative Example 2 were similarly fixed to the supporting jig for the dynamic viscoelasticity measuring device. The measurement was performed at a frequency of 650 Hz and a temperature of 15 to 4 (rc), and the minimum value of the loss coefficient in the range was obtained. (5% modulus) Wafer bonding using Examples 1 to 9 and Comparative Examples 1 and 2. For the base resin film used in the adhesive sheet, a test piece was prepared in accordance with JIS K7127/2/300, and a 5% modulus was determined. The average value of the measured number η = 5 was used as a test result. (Tear strength) Using Example 1~ 9 and the base resin film used for the wafer bonding of Comparative Examples 1 and 2, the peeling strength of the peeling 21 S-201118146 was measured according to JIS Κ7128-3 Pan bamboo 1 μI 1 乍忒 piece. The average value of the number n = 5 was used as a test result. (Fracturing property) Wafers were mounted on the wafer-bonding adhesive sheets of Examples 1 to 9 and Comparative Examples 1 and 2, and then subjected to ultraviolet irradiation (500 mJ). /m2), randomly take 50 wafers from one wafer and measure the back of the wafer using a microscope (100 to 200 times) The average value of the maximum value of each side of the adhesive surface was calculated. The average value of all the values was calculated. (Extensibility) Wafers were mounted on the wafer bonding adhesive sheets of Examples 1 to 9 and Comparative Examples 1 and 2. After cutting, ultraviolet irradiation (50 〇 mJ/m2) was carried out, and the extension piece (manufactured by Technovisi〇n Co., Ltd., trade name "ΤΕΧ-2 1 8G") was extended by 20 mm to evaluate whether or not the adhesive sheet was broken. Let the number of measurements η = 30 The case where the fracture was not broken once was evaluated as ◎, and in the measurement number η:=30, the case where the number of fractured samples did not reach η=3 was evaluated as 〇, and the case where the fracture was 3 or more was evaluated as X. 22 201118146
201118146 (分散直徑之測定） 將以如上方式製作之實施例1及2中使用之基材樹脂 膜用環氧樹脂固定後，u四氧化釕染色，使用切月機製作 溥切片。制穿透式電子顯微鏡（日立高新技術（職咖 H】gh-Technologies)公司製造，商品名「η·9_να」）觀察 該薄切片。其結果’實施例i及實施命"中均觀察到於連 續相中存在經染色之分散相之狀態。因SEps中所含之苯乙 烯容易由四氧化釕染色，故而可知連續相為聚㈣，分散 相為SEPS。》則定穿透式電子顯微鏡之視野（細咖χ 2〇〇 中的分散相之粒子直徑’求出其平均值。結果實施你" 之SEPS之平均直徑為21 nm。另夕卜，實施例2之㈣$之 平均直徑為19_。另外，實施例3之平均直徑為18_。 如表1所示，與比較例卜2之晶圓貼合用黏著片相比 較’實施例1〜9之晶圓貼合用黏著片可將碎裂之大小大幅 減小至ι/2以下，且延伸性亦顯示良好之性能。 、雖伴隧上述實施態樣而對本發明進行了說明，但應認 2只要吾等未特別指定，則本發明應不受限於說明之任一 砰細部分，本發明可於未與所附之申請專利範圍中所示的 發明之精神及範圍相左之前提下進行廣泛之解釋。 本申請案係主張於2009年7月8日在日本申請專利之 曰本專利特願2009-162009之優先權，本文中以其作為參 照’且併入其内容作為本說明書之記載之一部分。 【圖式簡單說明】 圖1係表示本發明之晶圓貼合用黏著片之一實施形態 24 201118146 的剖面圖。 圖2係說明半導體晶圓之切割步驟及選取步驟之剖面 圖。 圖3係說明半導體晶圓之切割步驟及選取步驟之剖面 圖。 圖4係說明半導體晶圓之切割步驟及選取步驟之剖面 圖。 圖5係說明半導體晶圓之切割步驟及選取步驟之剖面 圖。 【主要元件符號說明】 1 基材樹脂膜 2 黏著劑層 11 固定夾 12 晶圓貼合用黏著片 13 半導體晶圓 14 元件小片（晶片） 15 實線箭頭方向 16 擴幅器 17 虛線箭頭方向 25201118146 (Measurement of Dispersion Diameter) The base resin film used in Examples 1 and 2 produced as described above was fixed with an epoxy resin, and then stained with u ruthenium tetroxide, and a ruthenium slice was produced using a tangent machine. The thin section was observed by a transmission electron microscope (manufactured by Hitachi High-Tech Co., Ltd., gh-Technologies, under the trade name "η·9_να"). As a result, the state of the dyed dispersed phase in the continuous phase was observed in both the example i and the practice. Since the styrene contained in SEps is easily dyed by osmium tetroxide, it is known that the continuous phase is poly(tetra) and the dispersed phase is SEPS. "The average value of the SEPS of the dispersed phase of the fine-grained electron microscope is determined by the field of view of the transmission electron microscope. The average diameter of the SEPS for which you have implemented is 21 nm. In addition, the examples 2 (4) The average diameter of $ is 19 mm. In addition, the average diameter of Example 3 is 18 mm. As shown in Table 1, the wafers of Examples 1 to 9 are compared with the adhesive sheets for wafer bonding of Comparative Example 2. The round-bonding adhesive sheet can greatly reduce the size of the chipping to below ι/2, and the elongation also shows good performance. Although the present invention has been described with the above embodiment, it should be recognized as long as 2 The invention is not limited to the details of the invention, and the invention may be carried out without departing from the spirit and scope of the invention as set forth in the appended claims. The present application claims priority to Japanese Patent Application No. 2009-162009, filed on Jan. 8, 2009, the disclosure of which is hereby incorporated by [Simple description of the diagram] Figure 1 shows FIG. 2 is a cross-sectional view showing a step of cutting and selecting steps of a semiconductor wafer. FIG. 3 is a cross-sectional view showing a step of cutting a semiconductor wafer and a step of selecting the same. Fig. 4 is a cross-sectional view showing a step of cutting and selecting steps of a semiconductor wafer. Fig. 5 is a cross-sectional view showing a step of cutting and selecting steps of a semiconductor wafer. [Description of main components] 1 substrate resin film 2 Adhesive layer 11 Retaining clip 12 Wafer bonding adhesive sheet 13 Semiconductor wafer 14 Component small piece (wafer) 15 Solid arrow direction 16 Expander 17 Dotted arrow direction 25