TW201031703A - Positive photosensitive resin composition - Google Patents

Abstract

A positive photosensitive resin composition comprises the following constituents (A), (B), and (C), in which with respect to the constituent (A) 100 parts by mass, the composition ratio of the constituent (B) and (C) are respectively set such that (B) is 5 to 50 parts by mass and (C) is 1 to 40 parts by mass. The constituent (A) is a copolymer composed of the following composition units: a composition unit (a1) derived from a fumaric acid diester monomer; a composition unit (a2) derived from an aromatic vinyl monomer; a composition unit (a3) derived from an alpha, beta-unsaturated carboxylic acid monomer, and a composition unit (a4) derived from a (methyl) acrylate ester. The constituent (B) is a photosensitive agent having a quinonediazide group. The constituent (C) is a curing agent having more than two epoxy groups.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photosensitive resin composition, and more particularly to a positive photosensitive resin composition. Further, in detail, a photosensitive resin composition capable of forming a pattern film by using a photolithography technique, and further relates to a flat panel display (FPD) or a semiconductor device including the use of the photosensitive resin composition. Interlayer insulating film or planarizing film. [Prior Art] In the field of manufacturing semiconductor integrated circuits such as LSIs, manufacturing of fpd display surfaces, and manufacturing of circuit boards such as thermal heads, in order to perform fine element formation or microfabrication, the conventional system is used. Use light lithography technology. In the photolithography method, in order to form a photoresist pattern, a photosensitive resin composition is used. In recent years, in the novel use of these photosensitive resin compositions, techniques for forming interlayer insulating films or planarizing films such as semiconductor integrated circuits or FPDs have been attracting attention. In particular, the market expectation is high for the high definition of the FpD display surface or the shortening of the manufacturing process of the semiconductor element represented by the TFT or the like. φ In order to achieve high definition of the FpD display surface, it is important to suppress transmission loss in the circuit, and a fine pattern type interlayer insulating film or planarizing film having excellent low dielectric characteristics is regarded as an essential material. Further, regarding the shortening of the manufacturing process of the semiconductor element, the inorganic interlayer insulating film such as SiNx formed by vacuum evaporation is intended to protect the source electrode gate-electrode, instead of the organic interlayer insulating layer which can be easily formed by a wet process. The film is as desired. Therefore, the interlayer insulating film of the organic layer must have the same insulating property as SiNx, and an interlayer insulating film having a dielectric constant of less than 3% of low dielectric properties is considered necessary. In order to obtain an interlayer insulating film or a planarizing film having such a low dielectric property, the role of the alkali-soluble resin in the photosensitive resin composition is extremely important, and the composition of the photosensitive resin 3 201031703 used for such use is Do a lot of research. For example, it is disclosed in Patent Document 1 that a radically polymerizable compound having an unsaturated carboxylic acid and an epoxy group is used by testing a soluble fat of a photosensitive resin composition for an interlayer film or a planarizing film. Further, the photosensitive resin composition has good developability and can form a pattern film of resolution. However, it is generally known that the constituent unit contained in the alkali-soluble resin is composed of a (meth) acrylonitrile group, and thus a photosensitive resin composition having sufficient low dielectric properties cannot be obtained. Patent Document 2 discloses that a solvent-soluble resin mixed with a photosensitive resin composition for an interlayer insulating film or a planarizing film is a copolymer containing styrene, (meth)acrylic acid, and a hydroxyalkyl ester as a constituent unit. The low dielectric properties of the photosensitive resin composition became good. However, in the case where a large amount of styrene is introduced into the resin, since the hydrophobicity of the resin is high, the residual film ratio at the time of development can be highly maintained, but the development residue is increased, and the photosensitive property having sufficient developability cannot be obtained. The resin composition, these problems are perceived by the inventors. Further, Patent Document 3 discloses that, in order to form a protective film for a color filter, a pixel for RGB, a black matrix or a spacer, a photopolymerizable polyfunctional compound containing a fumarate diester is used. A negative photosensitive resin composition of a (meth) acrylate compound and a photopolymerization initiator can provide good developability. However, since the photopolymerizable polyfunctional (meth) acrylate contained in the negative-type photosensitive resin composition has a dielectric constant 咼, a photosensitive resin composition having sufficiently low dielectric properties cannot be obtained. The problem was perceived by the inventors. In view of such a situation, in a photosensitive resin composition used for an interlayer insulating film or a planarizing film such as an FPD or a semiconductor device, it is desired to form a high-resolution pattern film which can maintain a high residual film rate and no development. The residue and the developability are good, and the low dielectric properties are excellent. [Patent Document 1] Japanese Patent Laid-Open No. Hei 7-248629 (2nd 201031703, page 3, and 4) [Patent Document 2] Japanese Patent Laid-Open Publication No. Hei 2-4-43. And the 34th page), the Lean number bulletin (2nd [Patent Document 3] 曰本特开2007-137947, page 3 and page 5) [Summary of the Invention]

A first object of the present invention is to provide a photosensitive resin composition which can maintain a high rate and no development residue in a developing step for forming a pattern film, and does not impair flatness even after baking at a high temperature. Under the coating physical properties such as light transmittance and solvent resistance, a pattern having a high resolution and a high resolution can be formed. A second object of the present invention is to provide an FPD or semiconductor device having a planarizing film or an interlayer insulating film formed of the excellent photosensitive resin composition. A second object of the present invention is to provide an FPD or a semiconductor device which does not form an inorganic interlayer insulating film such as SiNx by the excellent photosensitive resin composition, but which is an organic interlayer insulating film which can be easily formed in a wet process. θ The photosensitive resin composition according to the present invention is composed of the following components (Α), (8), and (C), and the components (B) and (C) are relative to the component (α) ι by mass. The composition ratios are each: (B) is 5 to 50 parts by mass and (C) is 1 to 40 parts by mass. The component (A) is a copolymer composed of the following constituent units: a constituent unit (al) derived from a fumaric acid diester monomer represented by the following formula (1); and the following formula (3⁄4) The constituent unit (a2) derived from the aromatic vinyl monomer shown is a constituent unit (a3) derived from an α,β-unsaturated acid monomer represented by the following formula (3); The constituent unit (a4) derived from the (meth) acrylate monomer represented by the formula (4), and the total amount of the constituent unit (ai) and the constituent unit (a2) in the copolymer is 40 in the component (a). To 85 mass 201031703%, the mass ratio (a4)/(a3) of the constituent unit (a3) to the constituent unit (a4) is 0.2 to 7.0. COOR1 • · ·(1)

I COOR2 : H—CH— (wherein R 1 and R 2 are each a branched alkyl group having 3 to 8 carbon atoms, a cycloalkyl group having 4 to 12 carbon atoms or a substituted branched cycloalkyl group)

(wherein R3 is a hydrogen atom or a methyl group; and R4 is an aromatic hydrocarbon group having a carbon number of 6 to 12) R5

OH • ••(3) (wherein R5 is a hydrogen atom, a methyl group or a carboxy fluorenyl group) R6

c=o I 7 OR7 (wherein R 6 is a hydrogen atom or a methyl group; R 7 is an aromatic hydrocarbon group having 6 to 12 carbon atoms; an alkyl group having 1 to 12 carbon atoms; a branched alkyl group having 1 to 12 carbon atoms; carbon a burnt group of 2 to 12 or a principal ring constituting an alicyclic hydrocarbon group having 5 to 12 carbon atoms. 201031703 % Component (B) is a sensitizer having a quinonediazide group, which has The phenolic compound of a hydroxyl group is obtained by esterification reaction with a quinonediazide compound. Component (C) is a curing agent having two or more epoxy groups. The flat panel display of the second invention has a layer which hardens the photosensitive resin composition of the first invention. The semiconductor device of the third invention has a layer which cures the photosensitive resin composition of the first invention. [Effect of the Invention] The present invention can exert the following effects. According to the photosensitive resin composition of the first invention, in the development step of forming the pattern film using the lithography method, the high residual film ratio can be maintained as it is, and no development residue is present, even in the post-baking and the like. After baking, coating film properties such as flatness, light transmittance, and solvent resistance are not impaired, and a high resolution pattern film having excellent low dielectric properties can be formed. Further, it is possible to provide an FPD and a semiconductor device which have excellent characteristics by using the photosensitive resin composition. [Embodiment] Hereinafter, the embodiments of the present invention will be described in detail. φ The photosensitive resin composition of the present embodiment is composed of the components (A), (B) and (C), and the components and the constituent ratios of the components are set to (by mass) B) is 5 to 50 parts by mass and (C) is 1 to 40 parts by mass. Component (A): a specific copolymer described below. Component (B): a sensitizer having a quinonediazide group. A curing agent having two or more epoxy groups. Hereinafter, each component will be described in order. <Component (A): Copolymer> The copolymer of the component (A) is a copolymer composed of the following: The constituent unit derived from the fumaric acid diester monomer, represented by the formula (1), 201031703 (al); r, the structural unit derived from the aromatic vinyl monomer, represented by the formula (2) (a2) a structural unit (a3) derived from an α. P-unsaturated carboxylic acid monomer; and (methyl) propionate represented by the following formula (4), represented by the following formula (3); The constituent unit derived from the monomer (a4) The total amount of the constituent unit (ai) and the constituent unit (a2) is 40 to 85% by mass in the component (A), and constitutes a unit (phantom) and a constituent unit ((4) The mass ratio (a4)/(a3) is 〇2 to 7 〇. COOR1 iH+ · * * (1) COOR2 (wherein R1 and R2 are each a branched alkyl group having 3 to 8 carbon atoms, a cycloalkyl group having 4 to 12 carbon atoms or a substituted branched cycloalkyl group)

(2). (wherein R3 is a hydrogen atom or a methyl group; and R4 is an aromatic hydrocarbon group having a carbon number of 6 to 12) R5

C=0 in (wherein R5 is a hydrogen atom, a methyl group or a carboxy fluorenyl group) R6 (4) ~~ ~όη2—C--

8 201031703 (wherein R6 is a hydrogen atom or a methyl group; R7 is an aromatic hydrocarbon group having 6 to 12 carbon atoms, an alkyl group having 1 to 12 carbon atoms, a branched alkyl group having 1 to 12 carbon atoms, and a carbon number of 2 to 12 The hydroxyalkyl group or the main ring constitutes an alicyclic hydrocarbon group having 5 to 12 carbon atoms. The constituent units represented by the formulae (1) to (4) are each derived from a monomer (each constituent unit monomer) represented by the following formulas (5) to (8). COOR1 _I · · · (5)

CH=CH COOR2

(wherein R1 and R2 are each the same as those in the formula (1). The monomer of the formula (5) is referred to as a fumarate diester monomer) R3 CH^-C · · · (6) (wherein R3 and R4 are the same as those in the formula (2). The monomer of the formula (6) is referred to as an aromatic vinyl monomer). R5 CH2=C . . (7) c=o

I

OH (wherein R5 is the same as in the formula (3). The monomer of the formula (7) is referred to as an α,β-unsaturated carboxylic acid monomer). 201031703 R8 * I . (8) ch2 = c c = o OR7 (wherein R6 and R7 are the same as those in the formula (4). The monomer of the formula (8) is referred to as a (meth) acrylate monomer). [Constituent unit (al) derived from fumaric acid diester monomer] The constituent unit (al) derived from the fumaric acid diester monomer is not present in the portion which becomes the main chain structure The methylene group has a substituent (COOR1, COOR2 in the formula (1)) bonded to the carbon of the main chain, and the polymer composed of the antibutyric acid and the vinegar has a rigid primary bond structure. Since the rigid main chain structure is constructed, the thermal chain property of the molecular chain of the main chain can be suppressed, the loss of thermal energy to a specific frequency band can be suppressed, and good low dielectric characteristics can be obtained. In the formula (1), R1 and R2 each are a branched alkyl group having 3 to 8 carbon atoms, a cycloalkyl group having 4 to 12 carbon atoms or a substituted branched cyclic alkyl group. R1 and R are preferably a branched alkyl group having 3 to 6 carbon atoms, a cycloalkyl group having 6 to 6 carbon atoms or a substituted branched cycloalkyl group. More preferably, it is a branched alkylene group of 3 to 5 or a cycloalkyl group having 6 to 8 carbon atoms. When the carbon number of the base branch base exceeds 8, the degree of polymerization is lowered, which may cause inconvenience. Further, when the carbon number of the ring-burning group or the substituted branched ring-burning group is 12, the problem of insufficient developability may occur. In the above, R and R may be the same substituents of each other, and may be mutually different radicals. In terms of the ease of obtaining, it is preferable that the ... and the ruler 2 are identical to each other. [Constituent unit (a2) derived from aromatic vinyl monomer] The aromatic vinyl monomer derived from the constituent unit (a2) can be combined with the fumarate diester derived from the constituent unit (al) Monomer reactivity. The fumarate diester monomer has a low electron acceptability of the ^201031703 body, so it has low reactivity with polar monomers such as (meth) acrylate or acrylonitrile, but with electron donation. The copolymerization of the monomer is more ambiguous. The aromatic vinyl monomer derived from the constituent unit (a2) is one of three kinds of anti-butenic acid diester monomers, α, β-unsaturated carboxylic acid monomers, and (meth) acrylate monomers. Since the monomer copolymerization property is good, the constituent units derived from the monomers having different copolymerizabilities can be smoothly introduced into the polymer during the polymerization reaction, and the uniformity can be obtained without the uneven distribution of the copolymer composition. Copolymer. In the formula (2), R3 is a hydrogen atom or a methyl group; and r4 is an aromatic hydrocarbon group having 6 to 12 carbon atoms. Preferably, R3 is a hydrogen atom; and R4 is an aromatic hydrocarbon group having 6 to 1 carbonium. When the carbon number of R4 exceeds 12, the developability of the photosensitive resin composition is not sufficient. [the total amount of (al) + (a2)] The total amount of the constituent unit (al) derived from the anti-succinic acid diacetate monomer and the constituent unit (a2) derived from the aromatic vinyl monomer, It is 40 to 85% by mass, preferably 45 to 80% by mass, and more preferably 50 to 75% by mass in the component (A). When the total amount of (al) and (a2) is less than 40% by mass, the constituent units (a3) derived from the α,β-unsaturated carboxylic acid monomer and the (meth) acrylate monomer are lacking. The copolymerization property of the derived constituent unit ❿ (a4) is small, and the rigid segment is less in the copolymer, and a photosensitive resin composition having sufficiently low dielectric properties cannot be obtained. On the other hand, when it exceeds 85 mass%, the hydrophobicity of the copolymer becomes high, and the developability of the photosensitive resin composition is insufficient, and development residue is generated on the pattern. In the total amount of (al) + (a2) of the component (A), the appropriate composition ratio of (al) and (a2) is (al): (a2) = 80: 20 to 1: 9 〇 Better' better 70: 30 to 15: 85. (al) more than 80 mol%, (when 〇 is less than 20 mol%, the polymerizability in the polymerization reaction (al) may decrease, and there may be a problem of copolymerizability. On the one hand, (a2) exceeds 90 mol% When (al) is less than 10 mol%, the hydrophobicity of the copolymer of the aromatic vinyl monomer 201031703 becomes high in the component (A), and the developability of the fine structure of the stimulating tree may be insufficient. ^Constituent unit (a3) derived from (X,β-unsaturated carboxylic acid monomer) The constituent unit (6) derived from the unsaturated thief monomer is a component which reflects the solubility with respect to the developer. When i (m is a hydrogen atom, a methyl group or a (tetra) group, compared with a (tetra) hydrogen atom or a two-unit: unit, there is a constitution that cannot be obtained and can be derived from the α,β-unsaturated carboxylic acid monomer. „The content of the acidity of the component of the woven component (Α). Adjust the ratio of the constituents, (a3) so that the acid value should be in the range of 5 〇 to 2 〇〇 κ ηη / , more preferably 70 to 150 When the acid value is too low, the solubility of the developer may be insufficient. On the other hand, when the acid value is too high, the residual film rate during development may be lowered. Component unit (a4) derived from an acrylate monomer] A constituent unit (a4) derived from a (meth) acrylate monomer, which is a component which contributes to the adjustment of developability, and particularly contributes to development. Residual film rate, resolution adjustment. In the formula (4), R6 is a hydrogen atom or a methyl group, R7 is an aromatic hydrocarbon group having 6 to 12 carbon atoms, an alkyl group having a carbon number of 12 to 12, and a branched alkane having a carbon number i ^ U a hydroxyalkyl group having 2 to 12 carbon atoms or a main ring constituting an alicyclic hydrocarbon group having 5 to 12 carbon atoms. The main ring constitutes an alicyclic hydrocarbon group addition structure having a carbon number of 5 to 12, for example, It may contain an intra-ring double bond, a hydrocarbyl side bond, a helical ring side chain, an intra-cyclic cross-linking hydrocarbon group, etc. R6 is preferably a methyl group, R7 is preferably an alkyl group having 1 to 6 carbon atoms or a branched alkyl group, and the carbon number is '6 to An aromatic hydrocarbon group, a hydroxyalkyl group having 2 to 4 carbon atoms, a cyclohexyl group or a dicyclopentyl group. When the carbon number of R7 exceeds 12, the polymerizability is lowered, and the constituent unit (a4) is derived. For the purpose of adjusting the developability, one or a combination of two or more may be used. [mass ratio (a4) / (a3)] From α,β-unsaturated carboxylic acid The mass ratio (a4)/(a3) of the constituent unit (a3) derived from the monomer to the constituent unit (a4) derived from the 12 201031703 (meth) acrylate monomer is 0.2 to 7.0, preferably 〇. 3 to 6.0, more preferably 〇6 to 4-〇. When the mass ratio (a4)/(a3) is lower than 〇·2, it is derived from the α Ρ-unsaturated carboxylic acid monomer in the copolymer. The composition unit is increased, and the residual film rate at the time of development is lowered. On the one hand, when the mass ratio (a4)/(a3) is higher than 7 = = due to the constituent unit derived from the (meth) acrylate monomer Many, resulting in insufficient developability, resulting in development residue or reduced resolution. In order to obtain a solvent for polymerization used in the copolymer of the component (A), a generally known solvent can be used. Specific examples of such a solvent include ethylene glycol monoalkyl ethers such as alcohol monoterpene ether and ethylene glycol monoethyl ether; ethylene glycol such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate. Monoalkaneacetic acid® quinones, monoethylidene-methyl-methyl-diethyl hydrazine, di-ethylene glycol-ethyl ketone, etc., monoethylidene alcoholic smoldering; propylene glycol monomethyl sulphate, propylene glycol Propylene glycol monoalkyl ethers such as diethyl ether; propylene glycol monoalkyl ether acetates such as propylene glycol monoterpene ether acetate; propylene glycol monoethyl ether acetate; lactic acid esters such as methyl lactate and ethyl lactate; aromatics such as toluene and xylene Hydrocarbons; ketones such as methyl ethyl ketone, 2-heptanone, and cyclohexanone; N,N_: mercaptoamines such as mercaptoacetamide and N-decylpyrrolidone; lactones such as γ-butyrolactone. These polymerization solvents may be used singly or in combination of two or more. φ is a polymerization initiator used for obtaining a copolymer of the component (Α), and generally known as a radical polymerization initiator can be used. Specific examples thereof include an azo polymerization initiator, an azo-based polymerization initiator having no cyano group, an organic peroxide, and hydrogen peroxide. In the case where a peroxide is used as the radical polymerization initiator, the peroxide may be combined with a reducing agent to form a redox polymerization initiator. In order to adjust the weight average molecular weight at which the copolymer of the component (Α) is obtained, a molecular weight modifier can be used. Examples of the molecular weight modifier include n-hexyl mercaptan, n-octyl mercaptan, n-dodecyl mercaptan, tert-dodecylmercaptan, thioglycol acid, and thiopropyl propionate. (mercaptopropionic acid) and other thiols; dimethyl xanthogen 13 201031703 acid disulfide, diisopropyl xanthogen disulfide and other xanthogens; Zhuang - oil women (tei * pinolene), α-mercapto Phenylene dimer, etc. The copolymer of the component (Α) preferably has a weight average molecular weight of from 5 to 60,000, more preferably from 5,000 to 30,000, particularly preferably from 8,000 to 25,000. When the weight average molecular weight is less than 5,000, 'the pattern flow will occur during post-baking. 'There is a case where the resolution of the pattern film is insufficient. 'In the case of more than 60,000', the solubility in the developer is lacking. Satisfactory developability. &lt;Component (Β): sensitizer having quinonediazide group&gt; sensitizer having a nitrogen-containing azeo group, which is exposed through a photomask in an exposure step of photolithography Further, by photo-isoning reaction of a sensitizing agent having a quinonediazide group in the exposed portion to form a carboxyl group, it can be dissolved in the developing solution in a subsequent developing step. On the other hand, since the unexposed portion has a dissolution prohibiting energy for the developer, a film can be formed. That is, the sensitizer having a diazide group can be obtained by passing through a reticle to be subjected to a subsequent development step to fractionate the solubility with respect to the developer, so that a pattern can be obtained. membrane. a sensitizing agent having a quinonediazide group in the form of a knife/b (B), which can be used as a 'f-compound compound with a quinone diazide compound', and can be used as a naphthoquinonediazide group or a benzene-stacked stack. The gas-based continuation of the chlorinated boat of the second stack of gas-based bismuth compounds without diazide = the adjustment of the substance has the basis of the symmetry:; η ί can = di compound. Therefore, the average yield of these mixtures is indicated by 201031703*. Further, the reaction products may be used singly or in combination of two or more kinds. The esterification ratio of the sensitizer having a brewed diazide group is preferably from 2 to 95 mol%, more preferably from 35 to 90 mol%. %. If the esterification rate is less than 2 Torr, the sensitivity is lowered. If it exceeds 95% by mole, the compatibility with the sensitizer of the copolymer deteriorates, so that the pattern 臈 is phase separated, and there is cloudiness. Hey. In the case of a phenolic compound having a hydroxyl group, which can be used for the sensitizer of the nitrogen-based compound, it is preferably a compound represented by the following formula (9) or (10).

(wherein R8, R9, R10 and R11 are each a hydrogen atom or an alkyl group having a carbon number of j to 2; and R12 and R13 are each an alkyl group having a carbon number of 2 to 2)

\(R15)/n==/ R18 / \ / m • (9) * &gt; · (10) (wherein R14, R15, R16, R17, Ri9 and R2 are each a hydrogen atom, carbon number 1 To the base of 4 or the following formula (11),

* · (11) 15 201031703 where R21 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; m and η are each an integer of 0 to 2; have been, 1), 〇, (1, 6, 、, 吕和11 is an integer from 0 to 5 satisfying a+b$5, c+d^5, e+f^5, g+h$5; i is an integer from 0 to 2) The compound represented by the formula (9) In the aspect, for example, the following compounds can be mentioned.

Further, examples of the phenolic compound represented by the formula (10) include o-nonylphenol, m-cresol, p-cresol, 2,4-xylenol, 2,5-diphenylphenol, and 2,6-di. Cresol, bisphenol VIII, 6, 0 ug, oxime and 0,4,4',4''-methine phenol, 2,6-bis[(2-hydroxy-5-tolyl) fluorenyl] 4-methylphenol, 16 201031703 ' 4,4'-[l-[4-[l-(4-hydroxyphenyl)-1•methylethyl]phenyl]ethylidene]bisphenol, 4, 4'-[1-[4-[2-(4-Hydroxyphenyl)-2-propyl]phenyl]ethylidene]bisphenol, 4,4',4''-ethylidene phenol, 4-[bis(4-hydroxyphenyl)methyl]-2-ethoxyphenol, 4,4'-[(2-hydroxyphenyl)methylene]bis|; 2,3-di, phenol], 4,4'_[(3-Phenyl)methylene]bis[2,6-xylenol], 4,4'-[(4-hydroxyphenyl)methylene]bis[2,6_ Xylenol], 2,2'-[(2-hydroxyphenyl)methylene]bis[3,5-xylenol], 2,2'-[(4-hydroxyphenyl)methylene] Bis[3,5-xylenol], 4,4'-[(3,4-dihydroxyphenyl)indenyl]bis[2,3,6-trimethylphenol], 4-[double (3- Cyclohexyl-4-hydroxy-6-methylphenyl)methyl]-1,2-benzenediol, 4,6-bis[(3,5-diamidino-4-hydroxyphenyl)methyl] -1,2,3-benzenetriol, 4,4'-[(2-hydroxyphenyl) ][3-❿ cresol], 4,4',4''-(3-methyl-1-propan-3-yl) phenol, 4,4',4",4"'- (1,4-Benzene secondary methyl) indophenol, 2,4,6-gin[(3,5-dimethyl-4-hydroxyphenyl)methyl]-1,3-benzenediol, 2,4,6-gin[(3,5-dimethyl-2-hydroxyphenyl)methyl]-1,3-benzenediol, 4,4'-[1-[4-[1-[ 4-hydroxy-3,5-bis[(hydroxy-3-indolyl)methyl]phenyl]-1-methylethyl]phenyl]ethylidene] bis[2,6-bis(hydroxy_ 3_曱Phenyl)methyl]phenol and the like. Among these compounds, 4,4',4"-methine phenol, 2,6-bis[(2-hydroxy-5-tolyl)methyl&gt;4-cresol, 4,4' is preferred. -[1-[4-[1-(4-hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphenol, 4,4'-[1-[4_[2-(4 -Hydroxyphenyl)-2.propyl]phenyl]ethylidene]bisphenol, 4,4',4"-ethyleneoxyphenol, and the like. Among the phenolic compounds represented by the general formula (10), a compound represented by the following formula (15) or the following formula (16) is particularly preferred.

17 .· · (16) 201031703

In the photosensitive resin composition, the composition ratio of the sensitizing agent having the quinonediazide group of the component (B) is 5 to 50 parts by mass, preferably 7 to 100 parts by mass based on 100 parts by mass of the copolymer of the component (A). 45 parts by mass, more preferably 10 to 40 parts by mass. When the composition ratio is less than 5 parts by mass, there is a fear that the sensitivity is lowered or the development residue is generated. When the amount exceeds 5 parts by mass, the compatibility with the sensitizer of the copolymer is deteriorated, and there is a fear that the film is formed. The righteousness. <Component (C): Curing agent having two or more epoxy groups> The curing agent used in the photosensitive resin composition of the present invention has two or more epoxy groups. The hardener generates a thermosetting reaction when the carboxyl group and the side chain of the copolymer are baked, and a crosslinked film can be formed. Specific examples of the hardening include bis (tetra) epoxy resin, f or lacquer type epoxy resin, naphthalene epoxy resin, alicyclic epoxy resin, ring epoxy resin, and propylene glycol epoxy resin. Resin, epoxy propylamine grease, heterocyclic epoxy resin, Wei-burning epoxy resin, s-type t-oxygen resin, tetraphenyl (phenyloi) ethane-type epoxy resin, Dp hard epoxy or more epoxy double Phenol type epoxy resin, which can achieve good hardenability, high light transmittance and resistance j = good use of a kind of light woven material viewing resin can only be 18 201031703 • In the photosensitive resin composition, relative to the composition (A The copolymer of 100 parts by mass of the component (C) hardener has a composition ratio of i to 4 parts by mass, preferably 5 to 35 parts by mass, more preferably 1 to 3 parts by mass. When the composition ratio is less than 1 part by mass, the solvent resistance of the pattern film (cured film) is not sufficient, and when it exceeds 40 parts by mass, the compatibility with the curing agent of the copolymer is deteriorated, and a pattern film is produced. The separation of the phases, there may be turbidity. &lt;Other Additive Components&gt; An additive component such as a solvent, a curing accelerator, a contrast enhancer, a compatibilizer, an adhesion improving agent, or an interface active agent may be added to the photosensitive resin composition. (Solvent) Specific examples of the solvent include ethylene glycol monoterpene ether, ethylene glycol monoethyl ether, and the like, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate. Ethylene glycol monoalkyl ether acetate, diethylene glycol dimethyl scale, monoethyl alcohol-i-mystery, diethylene glycol methyl ketone and other diethylene glycol di-ether ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether Propylene glycol monoalkyl ether acetates such as propylene glycol monohydrate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, lactic acid esters such as decyl lactate and ethyl lactate, aromatic hydrocarbons such as φ methyl and monomethylbenzene Lactones such as ketones such as ketones such as ketones such as ketones such as N,N-dimethylacetamide and N-decylpyrrolidone; These solvents may be used singly or in combination of two or more. (Curing accelerator) The hardening accelerator promotes the crosslinking reaction of the hardener of the component (C) with the carboxyl group of the side chain of the copolymer of the component (Α). Examples of the hardening accelerator include aromatic sulfonium salts such as SI-60L, SI-80L, SI-100L, and SI-110L (all of which are manufactured by Niigata Chemical Industry Co., Ltd.); U-CA^SA102, U. -CAT SA106, U-CAT SA506, U-CAT SA603, U-CAT 5002 (all of which are manufactured by San apro Co., Ltd.), etc., such as diaza-jujube 19 201031703 upper diene salt; U_CAT 5003, U-CAT 18X, cpi_210s [ Above san叩(7) company system]. Further, in the promotion of the hardening of the imidazole system, Curezol 1B2PZ (manufactured by Shikoku Chemicals Co., Ltd.) can be mentioned. Further, a photobase generator or the like which generates a base by light irradiation can also be used. The photobase generator can produce a base such as an amine upon light irradiation by adjusting the conditions in the bleaching step, and is used as a crosslinking accelerator in the subsequent baking step. Since the curing accelerator is contained in the photosensitive resin composition, the reaction rate between the epoxy group and the carboxyl group is increased, so that the high temperature baking of the pattern film can be suppressed in the high-temperature baking such as post-baking ( Heat-saggings) 'And get a high resolution type of film. The composition ratio of the hardening accelerator to the hardening agent of the component (C) is preferably from 0.1 to 15 parts by mass, more preferably from 1 to 1 part by mass. (Contrast Enhancer) The phenolic compound having a hydroxyl group represented by the formula (9) or (10) may be mixed in the purpose of improving the contrast of the photosensitive resin composition. Since the rhodium-based compound is a low molecular weight, it is most suitable for adjusting the dissolution rate in the photosensitive resin composition, or improving the sensitivity of the photosensitive resin composition or for adjusting the sensitivity thereof. The adjustment of the dissolution rate or sensitivity is carried out by adjusting the addition amount of the phenolic compound. In the case of increasing the dissolution rate and the sensitivity, the more the addition amount, the better, and in the opposite case, the addition amount is less. The better. By using these phenolic compounds, it is shown that the resin component which is inhibited from being dissolved by the azo coupling reaction with the sensitizer becomes a low molecular compound by using the phenolic compound. The difference in the dissolution rate from the unexposed portion becomes larger (increased contrast), and the resolution is improved. The phenolic compound having a hydroxyl group is preferably the formula (12), (13), (14), (15) or (16), and it is usually used in an amount of from 1 to 20 parts by mass based on 100 parts by mass of the copolymer. (Compatibilizer) 20 .201031703 For the purpose of improving the compatibility of the components (A), (B), and (C) in the photosensitive resin composition, the following formula (17) can be further mixed. A polycarboxylate compound in which one or more of the carboxyl groups is partially esterified with a higher alcohol. (R^OCOJp--R22-(CO〇H)q . . . (17) Here, R22 may be a hydrocarbon group substituted by a hydroxyl group, a halogen, an amine group or a sulfonic acid group; R23 is a hydrocarbon group; p and q Each of them is an integer of 1 or more. R22 is preferably a saturated hydrocarbon, an unsaturated hydrocarbon or an aromatic hydrocarbon, and is particularly preferably an unsaturated hydrocarbon. The carbon number of R23 is not particularly limited, and is preferably 3 to 16, more preferably 5 to 12. twenty three

Further, R may be a linear alkyl group or a branched alkyl group. Further, when p is preferably 1 to 2, q is preferably 1 to 3', and p is 2 or more, each R23 may be the same or different. The content of the polycarboxylate compound is from 0.01 to 10 parts by mass, preferably from 5 to 5 parts by mass, based on 1 part by mass of the copolymer of the component (A). When the content of the polycarboxylate compound is more than 10 parts by mass, the heat resistance of the formed film may be deteriorated. (Male, bismuth, auxiliaries, and surfactants) In the photosensitive resin composition, an adhesion improving agent and a surfactant may be further mixed as needed. Examples of the adhesion improving agent may, for example, be an imidazole, butyric acid, alkanoic acid, polyhydroxystyrene, polyvinyl methyl ether, a third butyl novolac, an epoxy decane, an epoxy polymer or a decane coupling agent. Examples of surfactants include nonionic surfactants such as polyethylene glycols and their derivatives, i.e., polypropylene glycol.

Ether-containing fluorinated surfactant, for example, flu〇rad (product name: Sumitomo 3M Company), megafuck (product name: Dainippon Ink Chemical Industry Co., Ltd.), sulphurone (trade name: Asahi Glass Co., Ltd.) or 矽 矽A surfactant, for example, KP341 (trade name: Shin-Etsu Chemical Co., Ltd.). 〃 &lt;Preparation method of photosensitive resin composition&gt; When preparing a photosensitive resin composition or a diluted product thereof, each component starting from the points (A), (B), and (C) may be collectively Mixing, after the ingredients of 201021703 are dissolved in the solvent, they may be mixed in order. The λ order or the # condition is not dissolved in the solvent when the _ f σ is applied, so as to prepare the resin composition, the whole component and the same component can be used to make the tree, or it can be made as needed. Two or more kinds of solutions were prepared as a photosensitive resin composition by mixing σ with the use of the solution. &lt;Flat-screen display and semiconductor device&gt; The semiconductor device of the "Millennium group" has a substrate for making the photosensitive tree == film, and the substrate is made of a conventional FPD or semiconductor. Any substrate known as a substrate or the like is formed. The substrate may be a bare (four) substrate, or an oxide film, a nitride film, a metal film or the like may be formed, and a substrate having a circuit pattern or a semiconductor device may be formed. Further, the degree of prebaking is usually 40 to 140 ° C, and the time is about 15 minutes. Then, it is subjected to pattern exposure by a photomask formed in the photoresist film, and then developed by an alkali developing solution, and rinsing treatment is carried out as necessary to form a film of a photosensitive resin composition. In this way, the formed film is post-baked after full light to form a pattern film. The exposure amount at the time of full exposure is usually preferably 600 mJ/cm2 or more. Further, the post-baking temperature is usually from 150 to 250 ° C, preferably from 180 to 230 ° C. The post-baking time is 11 30 to 90 minutes. The pattern film formed using the photosensitive resin composition can be used as an fpd tanned film or an interlayer insulating film of a semiconductor device, a liquid crystal display device, a plasma display or the like. Here, the planarization film and the interlayer insulation are not completely independent, and the pattern film formed by the photosensitive resin composition can be used as a planarization film or as an interlayer film. Further, in a semiconductor device or the like, such a film can be used as an interlayer insulating film, and can be used as a planarizing film. '' 22 201031703

V. In the formation of the pattern film, a coating method of a photosensitive resin composition or a dilution thereof, a spin coating method, a roll coating method, a land coating method, a spray method, or the like may be used. Any method such as a flow coating method, a dip coating method, or a slit coating method. Further, for the radiation used for exposure, there are ultraviolet rays such as g-line, h-line, and i-line, far ultraviolet rays such as KrF quasi-molecular laser light or ArF excimer laser light, x-rays, electron beams, and the like. The development method includes a puddle development method, a dipping development method, a shaking immersion development method, a rinsing development method, and the like, and can be used in accordance with a conventional method for developing a photoresist. Further, as the developer, an inorganic base such as sodium hydroxide, potassium hydroxide, sodium carbonate or sodium citrate, an organic amine such as ammonia, ethylamine, propylamine, diethylamine, diethylamine ethanol or triethylamine can be used. An aqueous solution of a predetermined concentration, such as a quaternary amine such as tetraammonium hydroxide, is adjusted. [Embodiment] Hereinafter, the embodiment will be described in detail with reference to examples and comparative examples. In addition, “parts” and “%” refer to the quality standard without any special explanation. The measurement methods and evaluation methods used in the respective examples and comparative examples are as follows. ❹ &lt; Acid value 〉 Acid value (mg KOH / gram) is JIS K0070: 1992 "Test method for acid value, saponification price, ester price, iodine value, hydroxyl value and unsaponifiable matter of chemical products", in Hydrogen snoring (THF) solution was used to dissolve a certain amount of resin. The phenolphthalein was used as an indicator and titrated with a potassium hydroxide/ethanol solution. &lt;Weight average molecular weight&gt; The weight average molecular weight (Mw) was obtained by using a gel permeation chromatography apparatus HLC-8220GPC manufactured by Tosoh Corporation and a column SHODEX K801 manufactured by Showa Denko Co., Ltd., using THF as a dissolving solution, by using a calibration curve. The calibration curve was obtained by measuring the polystyrene standard having a molecular weight of 23 201031703 by an RI detector. ^ ' [Synthesis Example 1: Synthesis of Copolymer Α-1] A 1 ml-ml four-necked flask equipped with a thermometer, a stirrer, and a cooling tube was charged with lactic acid ethyl ester (EL) 540. The temperature of the liquid was raised to 90 in an oil bath. (: On the other hand, 71.1 g of bis(4-tert-butylcyclohexyl) fumarate (DcHtBF), 38.4 g of methacrylic acid (MAA), 18.9 g of styrene (St), methacrylic acid 2-hydroxyethyl (HEMA) 71.6 g, 2,2,-azobisisobutyronitrile (azo polymerization initiator, manufactured by Wako Pure Chemical Industries, Ltd.) 10.0 g and EL6〇.0 g previously uniformly mixed The liquid (dropping component) was dropped by a dropping funnel at a constant rate for 2 hours, and then maintained at the same temperature for 8 hours to obtain a copolymer A-1. [Synthesis Examples 2 to 9] In addition to changing the type and amount of the loading described in Table 1, Other than the dropping and the polymerization temperature, the synthesis of the total of A-2 to A-9 was carried out in the same manner as in the synthesis example.

24 201031703 ❹ [5 Οϊ 1 C PGMEA 334.3 1 1 MAA 27.6 &lt; ^ \ - AI BN 10.0 PGMEA 37.1 1 1 00 1 C PGMEA 420.0 1 St 120.0 MAA 38.4 HEMA 41.6 Hex-0 20.0 PGMEA 46.7 1 1 t&gt; 1 &lt PGMEA 420.0 D s AF 85.3 St 34.7 MAA 30.7 MMA /HPMA 10.0/39.3 H ex — 0 20.0 PGMEA 46.7 s vq CD 1 &lt; PGMEA 220.0 D t BF 49.6 St 90.4 MAA 46.0 CHMA 14.0 B u — 0 20.0 PGMEA 24.4 ο m 〇LO 1 &lt; PGMEA 270.0 D s BF 58.1 St 61.9 MAA 27.6 HEMA 52.4 He x —0 20.0 PGMEA 30.0 s 〇\ 1 &lt; PGMEA 334.3 D i PF 87.8 aM e S t 22.2 AA 12.8 HEMA 77.2 B u — 0 16.0 PGMEA 37.1 〇CO 1 &lt; PGMEA 540.0 D i PF 89.9 St 70.1 MAA 21.5 HPMA 18.5 H ex — 0 16.0 PGMEA 60.0 § ON o (M 1 c EL 540.0 D c HF 80.2 St 19.8 MAA 21.5 HPMA 78.5 Hex-0 16.0 EL 60.0 卜 t—i 1 &lt; EL 540.0 D c H t BF 71.1 St 18.9 MAA 38.4 HEMA 71.6 AI BN 10.0 EL 60.0 〇\ Synthesis Example Solvent mass for polymerization (g) (a 1 ) Monomer mass (g) (a 2) monomer mass (g) (a 3 ) monomer mass (g) (a 4) monomer mass g) Polymerization initiator mass (g) Dropping solvent mass (g) (a 1) + (a2) (mass%) Mass ratio type and amount 201031703 〇〇1 cn § o 〇Λ irT in oo vcT jn oo 00 00 cs »〇§ oo 豸Ο in o 〇Λ ocT cn soo &lt;n&quot; § ο o 〇\ (N in 00 ο o ίΝΛ od &lt;s &lt;s CO 03 \ inch ca mass average molecular weight (Mw Solid content concentration (% by mass) Dropping and polymerization temperature (°c) ·ς&gt; HH *® 〇# 2 ^ SV—/ 201031703 The meanings of the abbreviations in Table 1 are as follows.

DcHtBF: bis(4-t-butylcyclohexyl) fumarate

DcHF: Dicyclohexyl fumarate

DiPF: Diisopropyl fumarate

DsBF: di-isobutyl fumarate

DtBF: di-tert-butyl fumarate

DsAF: di-isoamyl fumarate

St : Styrene aMeSt : a- f-based benzophenone MAA : mercapto acrylate A A : acrylic acid HEMA: 2-hydroxyethyl methacrylate HPMA: hydroxypropyl methacrylate MMA : methyl methacrylate CHMA : A Cyclohexyl acrylate .

Hex-Ο : Third hexyl peroxy-2-ethylhexanoate, a peroxide-based polymerization initiator "perhexyl Ο" manufactured by Nippon Oil Co., Ltd.

Bu-O: tert-butylperoxy-2-ethylhexanoate, peroxide-based polymerization initiator "perbutylO" manufactured by Nippon Oil Co., Ltd. φ AIBN: 2,2'-azobisisobutyronitrile Nitrogen polymerization initiator, manufactured by Wako Pure Chemical Industries, Ltd.] PGMEA: propylene glycol monomethyl ether acetate EL: ethyl lactate <Example 1> 100 μg of the copolymer A-1 obtained in Synthesis Example 1 and the above formula (15) 6.25 g of the ester compound of 1,2-naphthoquinonediazide-5-sulfonyl chloride, 1.25 g of an anthracene compound represented by formula (15), Tecmoa VG 3101L (manufactured by Printech Co., Ltd.)克, U-CAT SA102 [manufactured by San apro] 0.1 g dissolved in propylene glycol monomethyl ether acetate 75.2 g and milk 27 201031703 ethyl acetate 0 · 2 g, in order to prevent on the photoresist during spin coating The radiation-like pleats, which are so-called streaks, are added, and a fluorine-based surfactant, Megafuck R-08 (manufactured by Dainippon Ink and Chemicals, Inc.), 1 gram is further added, and stirred, The filter of 02 μιη was filtered to modulate the dilution of the photosensitive resin composition. (Formation of a film pattern) The diluted product of the photosensitive resin composition was spin-coated on 4 twin crystals, and baked at a hot plate of 100 ° C for 90 seconds to obtain a film having a thickness of 42 Å. In the film, a g+h+i line aligner (PLA-501F) made by Canon Inc., the line and the width of the test pattern of the width and contact hole width i: i are exposed at an optimum exposure amount, and The product was developed by mass spectrometry of argon-oxidized tetramethylammonium solution at 23 ° C for 6 sec seconds to form a line-crossing pattern and a contact hole pattern with a width of 1:1. After the: ^ ^ ^ after 'by the oven in 220C, 60 knives heating, post-baking treatment, thick-patterned film (pattern film). ^ 7 υμ (Evaluation of developability) ϊ ϊ Ϊ Ϊ Ϊ ’ ’ ’ 观察 观察 观察 观察 观察 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10

Q i 1 m The development property was evaluated by observing the ❿m condition, and when the residue was observed, the developability was evaluated as 〇. Its,, and the results are as shown in Table 2. (Evaluation of dielectric rate) Except that the PLA-5G1F does not expose the test pattern, Potted

The operation of 2 is "3" Ομιη thick_ on the 4 __ wafer. An electrode was formed on the thin crucible, and the dielectric constant was calculated using the electrostatic capacity obtained from the LCR manufactured by Ando Electric Co., Ltd. at room temperature; Material 43U) (Evaluation of transmittance) Center of material. In addition to the use of a vertical 7 mm, horizontal 7 〇 sized quartz glass substrate, 28 .201031703 &gt; and the test pattern is not exposed, the other is the same as the above operation 'and the non-pattern on the glass substrate film. Next, the transmittance of the light wavelength of 400 nm of the glass substrate having the film was measured using an external visible light spectrophotometer CARY4E (manufactured by Balian). The results are shown in Table 2. (Evaluation of Solvent Resistance) The glass substrate obtained by performing the operation similar to the transmittance evaluation was subjected to a dipping at 8 ° C for 1 minute in Remover 100 [manufactured by AZ Electronic Materials Co., Ltd.]. Rinse with pure water and carry out 2 〇 (r, 15 minutes re-baking treatment. Then, the difference between the transmittance before the solvent immersion and the re-baking treatment is less than 3 ° / ❶, and it is evaluated as 〇, when the transmittance difference is 3% or more, it is evaluated as X. The results are shown in Table 2. 0 &lt;Example 2&gt; Except that the copolymer A-2 obtained in Synthesis Example 2 was used, the other The dilution of the photosensitive resin composition was prepared in the operation of Example 1. The same physical properties as in Example 1 were evaluated for the photosensitive resin composition, and the results are shown in Table 2. • &lt;Example 3 Up to 18&gt; The dilution of the photosensitive resin compositions of Examples 3 to 18 was prepared by the same operation as in Example 1 by mixing as shown in Table 2 and Table 3. For the photosensitive resin compositions The same physical properties as in Example 1 were evaluated, and the results are shown in Table 2 and Table 3. &lt; Comparative Examples 1 and 2&gt; A comparative example; a dilution of the photosensitive resin composition of I and 2 was prepared by performing the same operation as in Example 1 by mixing as shown in Table 3. For the photosensitive resin compositions The evaluation was the same as that of the physical properties of Example 1. The results are shown in Table 3. 29 201031703 [5 Example 9 A-1 1〇〇 mass fraction (15) smooth esterification rate = 67% 25 parts by mass VG3101L 20 parts by mass, 5 parts by mass, 0.8 parts by mass, 0.04 parts by mass, PGMEA/EL 1 _ o 00 (Ν' Example 8 A-1 100 parts by mass of the smooth esterification ratio of the formula (15) = 20% 25 parts by mass VG3101L 20 mass 5 parts by mass of 0.8 parts by mass of 0.04 parts by mass of PGMEA/EL 〇ON &lt;si Example 7 A-7 100 parts by mass of the stationary esterification ratio of the formula (丨5) = 50% 25 parts by mass of VG3101L 20 parts by mass of 5 parts by mass 0.8 parts by mass of 0.04 parts by mass of PGMEA/EL Μ (Μ On Example 6 A - 6 100 parts by mass of the smooth esterification ratio of the formula (15) = 50% 25 parts by mass VG3101L 20 parts by mass 5 parts by mass 0.8 parts by mass 0.04 by mass PGMEA/EL o Ό CS· Example 5 A — 5 100 parts by mass of the smooth esterification rate of the formula (15) = 50% 25 parts by mass VG3101L 20 mass 5 parts by mass of 0.8 parts by mass of 0.04 parts by mass of PGMEA/EL o (N (N ON Example 4 A - 4 100 parts by mass of the smooth esterification ratio of the formula (I5) = 50% 25 parts by mass VG3101L 20 parts by mass 5 parts by mass 0.8 parts by mass of 0.04 parts by mass of PGMEA/EL CS CS cs Example 3 A-3 100 parts by mass of the smooth esterification ratio of the formula (15) = 50% 25 parts by mass of VG3101L 20 parts by mass of 5 parts by mass of 0.8 parts by mass of 0.04 parts by mass PGMEA/EL ov〇c&lt;i Example 2 A-2 100 parts by mass of the smooth vinegarization rate of the formula (15) = 50% 25 parts by mass VG3101L 20 parts by mass 5 parts by mass 0.8 parts by mass 0.04 parts by mass PGMEA/EL o Cs CN Os Example 1 A-1 100 parts by mass of ballast of formula (I5) Esterification rate=50% 25 parts by mass VG3101L 20 parts by mass 5 parts by mass 0.8 parts by mass 0.04 parts by mass PGMEA/EL o 00 〇\ Example Component (A) Copolymer Component (B) Sensitizer Component (C) Hardener Formula Compound (15) U-CAT SA102 R-08 Solvent-developable Dielectric Permeability Rate Domain 1 Μ 201031703 ο ο ο ο ο ο ο ο [5 Comparative injury ο , \ Ag 100 parts by mass (15) Smooth esterification rate = 50% 25 parts by mass VG3101L 20 Parts by mass of 5 parts by mass of 0.8 parts by mass 〇. 〇 4 parts by mass of PGMEA/EL o cn CO &lt;n ^ 〇\ Comparative Example 1 A - 8 100 parts by mass of the smooth esterification rate of the formula (15) = 50% 25 parts by mass VG3101L 20 parts by mass 5 parts by mass 0.8 parts by mass 0.04 parts by mass PGMEA/EL X 00 c4 Example 1 8 A-1 100 parts by mass of the smooth esterification ratio of the formula (15) = 50% 25 parts by mass VG3101L 20 parts by mass 5 mass 〇 0.04 parts by mass PGMEA/EL 〇 00 cs_ CO 〇 \ Example 1 7 A-1 100 parts by mass of the smooth esterification rate of the formula (15) = 50% 25 parts by mass VG3101L 20 parts by mass 〇 0.8 parts by mass 0.04 parts by mass PGMEA/EL 〇00 CN &lt;s Os Example 1 6 A-1 100 parts by mass of the smooth esterification ratio of the formula (12) = 75% 25 parts by mass VG3101L 20 parts by mass 5 parts by mass 0.8 parts by mass 0.04 parts by mass PGMEA/ EL o Os oi Example 1 5 A-1 100 parts by mass of the stationary esterification ratio of the formula (12) = 50% 25 parts by mass VG3101L 20 parts by mass 5 parts by mass 0.8 parts by mass 0.04 parts by mass PGMEA/EL 〇 ON &lt;N * Example 1 4 A-1 100 parts by mass W ^ ^ tte| '―1 am \\ ^ VG3101L 30 parts by mass 5 parts by mass 0.8 parts by mass 0.04 parts by mass PGMEA/EL 〇ON &lt;si 1 3 A-1 100 parts by mass ^ ^ Μ in ^ 'τ- ^ ^ § slip 11 ^ VG3101L 5 parts by mass 5 parts by mass 0.8 parts by mass 0.04 parts by mass PGMEA/EL 〇 00 cs Example 1 2 A-1 100 mass The smooth esterification ratio of the formula (15) = 50% 35 parts by mass VG3101L 20 parts by mass 5 parts by mass 0.8 parts by mass 0.04 parts by mass PGMEA/EL o (N Example 1 1 A-1 100 parts by mass G-r-r - Machinery § - &quot; 2 VG3101L 20 parts by mass 5 parts by mass 0.8 parts by mass 0.04 parts by mass PGMEA/EL 〇00 CN On Example 1 0 A-1 100 parts by mass "SIS VG3101L 20 parts by mass 5 parts by mass 0.8 parts by mass 0.04 parts by mass of PGMEA/EL 〇00 cs SS Example ^ ^ /f&gt; ^ ^ $ PQ蟛蘅^ ^ Compound of formula (15) U-CAT SA102 R-08 Solvent-developable dielectric transmittance 铋彳

201031703 ο ο ο ο ο ο ο ο ο 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 After baking, the coating properties such as light transmittance and solvent resistance are not impaired, and the developability and low dielectric properties are excellent. Further, in Examples 1 to 18, the residual film ratio of the pattern film was sufficiently maintained, and the flatness of the pattern film was also good. On the other hand, as is apparent from the results shown in Table 3, since the copolymer of the component (A) in Comparative Example 1 did not contain the constituent unit (al), the developability was deteriorated. On the other hand, in Comparative Example 2, since the constituent units (al) and (a2) were not contained in the copolymer, the dielectric constant was deteriorated.

Claims (1)

201031703 ' , ' VII. Patent application scope: 1. A photosensitive resin composition consisting of components (A), (B) and (c), characterized in that component (A) is composed of the following a copolymer composed of a unit: a constituent unit (al) derived from a fumaric acid diacetate monomer represented by the following formula (1); and an aromatic compound represented by the following formula (2) a constituent unit derived from a vinyl monomer; (32); a constituent unit (a3) derived from an α,β-unsaturated acid monomer represented by the following formula (3'); a constituent unit (a4) derived from the (meth) acrylate monomer represented by the formula (4), in which the total amount of the constituent unit (al) and the constituent unit (a2) is in the component (a4) A) is 4〇 to 85% by mass, and the mass ratio (a4)/(a3) of the constituent (a3) to the constituent unit (a4) is 〇2 to 7 〇, COOR1 CH—Ιη-- (1) COOR2 breaks in the R and R 2 are each a branched alkyl group having 3 to 8 carbon atoms, a cycloalkyl group having 4 to 12 turns or a substituted cycloalkyl group. * * * (2) Aromatic R3 is a hydrogen atom or a methyl group; r4 is a carbon number 6 to 12 C - ... 0 OH 35 201031703 wherein R5 is a hydrogen atom, a methyl group or a carboxymethyl group R6 C=0 I 7 OR7 Wherein R6 is a hydrogen atom or a fluorenyl group; and R7 is an aromatic hydrocarbon group having 6 to 12 carbon atoms, an alkyl group having 1 to 12 carbon atoms, a branched group having a carbon number of 1 to 12, and a carbon number of 2 to 12; A prjncipie ring constituting an alicyclic hydrocarbon group having a carbon number of 5 to 12 (B) is obtained by esterifying a phenolic compound having a hydroxyl group with a quinonediazide compound. (quinonediazide group) sensitizer, component (C) is a curing agent having two or more epoxy groups, 2. 3. relative to component (A) 100 parts by mass, components (B) and (c); Rate ' : (B) is 5 to 50 parts by mass and (C) 4 j to 4 〇 mass facet display, which has a layer which hardens the resin composition as in the range of the patent application scope j] . 36 201031703 IV. Designated representative map: (1) The representative representative of the case is: None. (2) A brief description of the symbol of the representative figure: 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: