TW201036092A - Apparatus and method for treating substrate - Google Patents

Abstract

An apparatus and method for treating a substrate are provided. The apparatus includes a load port, an index module, a first buffer module, a coating/developing module, a second buffer module, a pre/post-exposure treatment module, and an interface module, which are sequentially arranged in a direction. The coating/developing module includes a coating module and a developing module, which are arranged in different layers. The pre/post-exposure treatment module includes a pre-treatment module and a post-treatment module, which are disposed at different layers. The pre-treatment module coats a protective layer on the wafer before an exposure process. The post-treatment module performs a wafer cleaning process and a post-exposure bake process after the exposure process. A robot for transferring the wafer is disposed in each of the pre-treatment and post-treatment modules.

Description

201036092 VI. Description of the Invention: [Technical Field] The present invention relates to a substrate processing apparatus and method, and more particularly to an apparatus and method for performing a photolithography process on a wafer . [Prior Art]

"When manufacturing semiconductor devices, various programs are used, such as cleaning programs, deposition programs, photo etching programs, etching programs, ion implantation programs, etc. The photoetching process used to form the pattern is very important for forming a half of high accumulation. In general, the system for performing the photolithography process includes a coating light: and a coating unit on the wafer, a pair of exposed wafers, a t-program, and a - a processing module that interfaces and is in line with the exposure device. In recent years, in addition to the above procedures, a number of steps are required before and after exposure. In the case of a typical device, the chambers of individual programs are executed. The planning of returning the robot is insufficient, so the time course of returning the robot is fully provided. ',' [Inventive content] The substrate processing apparatus and method of the engraving type can be improved - the light also provides a substrate processing apparatus and method, which can be pre- & The processing of the robot is caused by the processing volume. Although the effect of the material design may have the purpose of the present invention is not limited to the above, and those skilled in the art 5/41 201036092 should be described by the following examples to understand other objects of the present invention. Embodiments of the present invention provide a substrate processing apparatus including a container disposed to receive the substrate, a first buffer module, and a buffer for temporarily storing the substrates; a group, the substrate is transferred between the money inlet and the first buffer module; a / developing module 'for performing on the wire plate - a photoresist coating program disk = shadow program; - a second buffer module Having a post-exposure post-processing module for temporarily storing the device for performing a program on the substrate between the photoresist process and the exposure process and the developing process; And a interface m, wherein the loading port, the indexing module, the first buffering module, the second layer: the developing module, the second buffering module, the pre/exposure/post-processing, and the interface mode The line pre-/post-processing module arranged in the -first-direction extends a protective layer coating chamber, and the coating is coated on the substrate. Before/after, more = 3 α Washing the chamber, the cleaning chamber cleaning the substrate. In some embodiments, 'before/after the exposure The module comprises a pre-processing module and a post-processing module, wherein the protective layer can process the front module, and the cleaning chamber can be molded (4). In addition, the pre-processing module further comprises a Processing the reader. The baking chamber performs a chamber processing on the county plate, and the robot coats the protective layer with the protective layer π chamber raft. The processed module further includes an exposure post-bake After the exposure, the material chamber is subjected to a baking process in the exposure program chamber; the processing machine 11 transports the substrate between the cleaning chamber and/or the post-exposure baking chamber. 6/41 201036092 In other embodiments, the optical chamber and the second buffer: the second buffer module further comprises an edge exposed-edge exposure; the edge chamber exposes the substrate edge to the chamber. ^^ The robot transports the substrate to the side chamber to cool the substrate. The H money includes a cooling chamber, and in other embodiments, the different layers of the coating mold (four) developing module are included in the a layer chamber, a baking chamber, and a group. The coating module includes a coating resist coated on the substrate Upper layer, the (four) chamber reads the substrate in the coating mold roasting chamber, the coating machine substrate, and the robot is transferred between the developing module chamber and the coating chamber 'The developing chamber 2; = chamber: - flooding chamber and - developing heat treatment of the substrate, the developing machine = = shadow program, the transfer chamber between the baking chamber and the developing chamber = substrate in ~ 1 mode The baking chamber of the group is located in the same-high: layer module and the pre-processing module can be together - height: = and _ shadow module and the cooling of the module after the processing can be cooled = 3, may include - performing a high-performance work on the substrate corresponding to the coating module. The buffer of the group may be located at the height of the shadow module. 7郃 Anal can be located in a pair should be apparently processed after the module 1 The middle/Hui;|face core group includes a set of one set; a set to -^f/ also stores the first of the substrate - buffers the second buffer of the substrate) and temporarily stores the element And transferring the substrate between the 缓冲器 — — 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器 与 与 与 与 与 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 传输 传输 传输 传输 传输 传输 传输 传输 传输 传输 传输 传输 传输 传输 传输 传输In an example, the protective layer coating chamber, a return chamber having the processing robot, and the baking chamber of the pre-processing module are continuously arranged in a vertical direction in a vertical direction The second direction. The cleaning chamber, a return chamber having the processed robot, and a post-exposure post-baking chamber are continuously arranged in the second direction in a plan view. The regenerative chamber having the pre-processing robot and the buffer having the processing machine "each chamber" and the buffer of the second buffer module are drawn in the first direction. Each of the return chamber and the return chamber having the helium developing robot and the buffer of the second buffer module are juxtaposed in the first direction in a plan view. In other embodiments, the second buffer The module further includes a mis-exposure chamber exposing the edge of the substrate and a second buffering robot that transports the substrate to the edge=light chamber. The second buffer module _ buffering crying: the punching robot, and the edge The exposure chamber is continuously arranged in a second direction perpendicular to the first direction in a plan view. In another embodiment of the present invention, a substrate processing method is used to process a substrate, the method comprising The silk is coated on the substrate: a protective layer is coated on the coated light-substrate; a liquid immersion lithography process is performed on the coated substrate. immersion hthography process; Treated substrate; And performing a display on the substrate: after the substrate is executed and in other embodiments, the cleaning liquid is supplied to the substrate and left on the substrate. The cleaning liquid system is not in the 8/41 201036092 Heating the substrate while the body is removed and performing in other embodiments, and the steps are performed by the cleaning solution:: except for the 'after exposure _ sequence system: after the second is removed ^ another - 'the upper case towel' Axis training or

[Processing] In other embodiments, the protective layer is sequentially removed and the remaining portion of the protective layer is ash-ashing.

Drocess) Force children. A preferred embodiment of the present invention will be described with reference to the accompanying drawings, however, the present invention may be embodied in other forms and should not be construed as being limited to the following embodiments. Rather, these embodiments are to be interpreted as a complete description of the present invention and are intended to be understood by those skilled in the art. The device of the embodiment is for performing a photolithography process on a substrate, such as a semiconductor wafer or a flat panel display panel. In particular, the apparatus of the present embodiment is used before and after the coating process, the development process (devei〇ping pr〇cess), and the liquid immersi〇n lithography process. Perform a pre/p〇st -exposure treatment process. In the following description, a wafer is used as an embodiment of a substrate. The first to fourth figures show schematic views of a substrate processing apparatus 1 according to an exemplary embodiment of the present invention. That is, the first figure is a top view of the substrate processing apparatus i, and the second figure is a view of the first figure along the line AA, 9/41 201036092 three figures are the view of the first figure along the line segment BB, and the The four figures are the views of the first line along the line BB. The substrate processing apparatus includes a loading port 100, an index module (in (jex m〇dule) 200, a first buffer module 300, a coating/developing mode). a coating/developing m〇dule 400, a second buffer module (sec〇nd buffer m〇dule) 500, a pre/post-exposure treatment module 600, and an interface Interface module 700. Load 〇〇1〇〇, index module 2〇〇, first buffer module 300, coating/developing module 400, second buffer module 5〇〇, before/after exposure The processing module 600 and the interface module 700 are continuously arranged on a line extending in one direction (referred to herein as "first direction 12"). Further, the direction perpendicular to the first direction 12 in a plan view is referred to as "the second direction. 14", the direction perpendicular to the first direction 12 and the second direction 14 is referred to as "third direction 16". The wafer W is transported from the inside of the container 20. At this time, the container 2 is closed to the outside. For example, The container 20 may be a front open unified pod (F〇UP) having a front door. FIG fourth to illustrate various constituent elements. (Load port loading port) into the port 100 includes a plurality of loading stations 〇oad table) 120, the crystal circle W receiving trough 20 is disposed at the loading station 12〇. The loading stations 120 are arranged on a line extending in the second direction 14. There are four loading stations 120 in the first figure. (Index Module) The index module 200 transfers the wafer w between the container 2 〇 on the loading stage 12 loaded on the 缓冲 1 〇 and the first buffer module 300. The indexing module 200 includes a frame 210, an indexing robot 220, and a guide rail 230. 10/41 201036092 Frame 210 is generally an empty rectangular parallelepiped, and the frame is placed between the inlet 100 and the first buffer module 300. The south degree of the frame 21〇 of the index module 2〇〇 may be lower than the height of the frame 第 of the first buffer module 3〇〇', which will be described below. The indexing robot 22 and the guide (10) are placed in the frame 210. The indexing robot 22 has a four-axis driving structure, and the robot hand 221 directly moving the wafer w is rotatable and movable in the first, second, and third directions 12, 14, and 16. The indexing robot 22 includes, in addition to the οο, the hand 221, a robot arm 222, a bracket 223, and a base 224. The robot hand 221 is fixedly mounted on the robot arm 222. The robot arm 22 I stretches, contracts and rotates. The bracket 223 is disposed such that its longitudinal direction extends in three directions 16. The robot arm is attached to the bracket 223 for movement along the bracket 223. The bracket 223 is fixedly attached to the base 224. The guide rail is configured such that its longitudinal direction extends in the second direction 14. The base 224 is attached to the guide rail 230 so as to linearly move along the guide rail 23G. Although shown in the figure ί, the frame 210 has a door opener for opening and closing the door of the volume 20. (First Buffer Module) The first buffer module 300 includes a frame 31, a gamma, a second buffer 330, a cooling chamber, and a first buffer person 360. The frame 310 is generally an empty rectangular parallelepiped, and the frame 31 is disposed between the index module 200 and the coating/developing module 4A. The first device 320, the second buffer 330, the cooling chamber 35A, and the second buffer robot 360 are disposed in the frame 31A. The cooling chamber 35A, the second buffer and the first buffer 320 are continuously arranged upward in the third direction i6: =--------is corresponding to the coating, the developing module 4 The height of the layer module 401 will be described below. The cooling chamber 35A and the 11/41 201036092 two buffer 330 are located at a height corresponding to the developing module 402 of the coating/developing module 400, as will be described below. The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350, and the first buffer 320 by a predetermined distance in the second direction 14. 〇 每 Each of the first buffer 320 and the second buffer 330 temporarily stores a plurality of wafers W. The second buffer 330 includes a housing 331 and a plurality of brackets 332. The brackets 332 are disposed within the outer casing 331 and are spaced apart from each other in the third direction 16. Each wafer w is disposed on each of the holders 332. The outer casing 331 has an opening (not shown) corresponding to the index robot 220, the first buffer robot 360, and the developing robot 482 (described later) so that the index robot 220, the first buffer robot 360, and the development level are changed. The developing robot 482 of 402 can send the wafer W to or remove the wafer w from the holder 332. The first buffer 32 has a structure similar to that of the second buffer 33. However, the outer casing 321 of the first buffer 320 has an opening corresponding to the first buffer robot 360 and the coating robot 432 on the first module 401, which will be described later. The number of brackets 322 of the first buffer 320 may be the same as the number of brackets 332 of the second buffer 33G or the number of brackets 332 of the second buffer 33() may be comparable to the number of brackets 322 of the buffer 320. need more. The erosion buffering robot 360 is mounted on the first and second buffers 320, 330 at the hands 3' and the brackets 363. The robot hand 361 is fixedly contracted so that the machine 2 = two, and the arm 362 is set to be stretchable and lightly coupled to the support 363 to move in the direction of the younger one. The robot moves to the ground. The third direction 16 extends linearly along the bracket 363, and the position of the second buffer 330 extends from 12/41 201036092 to a position corresponding to the position of the first buffer 320. The bracket 363 can extend beyond the position corresponding to the second buffer 330 or the position corresponding to the first buffer 32A. The robot 360 can be set to have a two-axis drive structure to move the robot 361 only in the second and third directions 14, 16. The β cavity is 350 to cool the wafer w. The cooling chamber 350 has a housing 351 and a cooling plate 352. The upper surface of the cooling plate 352 is used to place the wafer W, ' and has a cooling element 353 that cools the wafer w. The cooling element 353 can be a variety of components, such as cooling water, heat

Module) or the like. Additionally, the cooling chamber 35A can have a _ft pin assembly (not shown) that interfaces the wafer onto the cooling plate 352. The housing 351 has an opening (not shown) corresponding to the indexing robot 22A and the developing robot 482, so that the developing robot 482 of the robot 220 and the developing module 402 can send the wafer w to or from the cooling plate 352. Wafer w. Additionally, the cooling chamber may now have a door to open and close the opening. (Coating/Developing Module) 垔 Layer/Development Module 400 篆曰 W W 钒 — — — — — — — — — — — — — — — — — — — — 将 将 将 将 将 将 将 将 将 将 将 将 ― The coating/developing module housing includes a moment and development module 402.涂归(10)】Coating 401 Cohabiting heart, Γ Shadow module 402 is located in different layers + for example, the coating module 4G1 is located in the developing module, and the coating module performs a coating of the photoresist on the crystal. The program of circle w, and the program group 401 for heating and cooling the wafer w before and after the photoresist coating process, includes a photoresist coating chamber 41, a bake chamber, and a chamber 430. The photoresist coating chamber 41, the baking chamber, and the return chamber = 13/41 201036092 are continuously arranged in the second direction 14. Therefore, the photoresist coating chamber 41 〇 "fire, the roasting chamber to 420 in the second direction 14 has a return chamber 43 〇 in the middle, spaced apart from each other. A plurality of photoresist coating chambers 410 are arranged in In each of the first and third f directions 12, 16. In the shot, there are six photoresist coating cavities to 41G as a legend. The plurality of baking chambers are arranged in the first-and-three directions. In each direction of the 16th, there are six for the roasting chamber to 420 as a legend. However, the number of the baking chambers 42〇 may be six or more. The return chamber 430 and the first buffer mold The first buffer 32 of the group 3 is juxtaposed in the first direction 12. The coating robot 432 and the guide 433 are disposed in the return chamber to 430. The return chamber is generally rectangular. The developing robot 43:1 is in the bake The cavity-to-object, the photoresist coating chamber, the first buffer 320 of the first buffer module 300, and the cooling chamber 52 of the second buffer module 5〇〇 are wafer wafers W, which will be described below. The length direction of the guide 433 extends in the first direction 12. The guide 433 guides the linear movement of the developing robot j in the first direction 12. The developing robot 432 includes a machine 434, one machine = #35 bracket 436 and a base 437. The robot hand 434 is fixedly split in the machine # 435 _L. The robot arm 435 is set to extendable disk shrinkage, so that the robot hand 434 can be horizontal The bracket 436 is disposed such that its longitudinal direction extends in the third direction 16. The robot arm 435 is a light carrier 436 for linear movement along the bracket 436 in the third direction 16. ^ 6 is fixedly coupled to the base The base 437 is lightly coupled to the guide 433 for movement along the guide 433. All of the photoresist coating chambers 41 have the same structure. However, the light used by the individual resist coating chambers 410 The type of resistance may vary. For example, the photoresist (ice (10) ^ ampnfjed res} st) can be used as a photoresist for 14/41 201036092. The photoresist coating chamber 410 coats the photoresist on the crystal. The photoresist coating chamber 410 includes a housing 411, a bracket plate 412, and a nozzle (m> zzle) 413. The housing 411 has a cup shape with an open top surface. The bracket plate 412 is located in the housing. The wafer 411 is supported to support the wafer w. The holder plate 412 is set to be rotatable. The nozzle 413 supplies the photoresist to the holder plate 41. The wafer W on the 2. The squeaking 413 is a circular tube to supply the photoresist to the center of the wafer w. The nozzle 413 may have a length corresponding to the diameter of the wafer W and have a slit exit. The coating chamber 41〇 may also include a nozzle 々μ, a nozzle

似 It is used to supply a cleaning solution such as deionized water to clean the surface of the wafer W coated with the photoresist. The baking chamber 420 heats the wafer w. For example, the baking chamber 42 performs a pre-baking process to heat the wafer W' at a predetermined temperature to remove organic matter on the wafer w or before coating the photoresist on the wafer w. Moisture, while performing a soft baking process after coating the photoresist on the wafer w. The cooling chamber performs a cooling process for more than one heating cycle. The baking chamber to 420 includes - a cooling plate cut or a heating plate 2 . The cooling plate is cut with a cooling element 423, such as a cooling water or thermoelectric module. The heating plate 422 has a heating element 424' such as a heating wire or a thermoelectric module. The heating plate and cooling plate 421 may be located in the individual baking chamber side. Alternatively, some of the flooding chambers have a cooling plate 421, while others may only have a heating plate. The development process is performed, the developing solution removes the wafer @form®-likes, and 敎 processing procedures, such as heating and cooling procedures, are performed before and after the development process. The developing module includes a shadow chamber 460, a baking chamber 47, and a return chamber gamma. The developing furnace 47G and the returning chamber galaxies are continuously arranged in the center-direction direction. Therefore, the developing chamber bias and the flooding chamber 47 are disposed in the second 15/41 201036092 direction 14 with the return chamber 480 interposed therebetween. A plurality of developing chambers 460 are arranged in each of the first and third directions 12, 16. In the figure, there are six developing chambers 460 as a legend. A plurality of heating chambers 470 are arranged in each of the first and third directions 12, 16. In the figure, there are six baking chambers 470 as a legend. However, the number of baking chambers 470 may be six or more. The return chamber 480 is juxtaposed with the second buffer 330 of the first buffer module 300 in the first direction 12. The developing robot 482 and the guide 483 are disposed in the return chamber 480. The return chamber 480 is generally rectangular. The developing robot 482 transfers the wafer W between the baking chamber 470, the developing chamber 460, the second buffer 330 of the first buffer module 3, and the second cooling chamber 540 of the second buffer module 500. . The length direction of the guide 483 extends in the first direction u. The guide 483 guides the linear movement of the developing robot in the first direction. The developing robot 482 includes a robot hand 484, a robot arm 4, a second arm, and a base 487. The robot 484 is fixedly mounted to the machine. The robot arm 435 is configured to be extendable and contractible so that the machine, the hand 484, can be moved in a horizontal direction. The bracket 48 direction extends in the third direction 16. The robotic arm is tied to the support 6 to move linearly along the stent strip in the third direction 16. Cut ===, and the pedestal is to the rail-- so that the shadow chamber 460 removes an exposure 2 on the wafer W that is different. The protective layer of the exposed area is also _ and the photoresist is removed. At this time, the light tilting layer of a region can also be removed. All of the 'ground' is not exposed 16/41 201036092 The photoresist coating chamber 460 includes a housing 461, a bracket plate 462, and a nozzle 463. The outer casing 461 is cup-shaped and has an open top surface thereon. A bracket plate 462 is located within the outer casing 461 to support the wafer w. The bracket plate 462 is designed to be rotatable. Nozzle 463 supplies the photoresist to wafer W on carrier plate 462. The nozzle 463 is a circular tube to supply the photoresist to the center of the wafer w. Nozzle 463 can have a length corresponding to the diameter of wafer w and have a slit exit. Further, the developing chamber 460 may also include a nozzle 464 for supplying a cleaning liquid such as deionized water to clean the surface of the wafer w 0 on which the developer is left. The baking chamber 470 heats the wafer w. For example, the baking chamber 47 is subjected to a post-baking procedure to heat the wafer w prior to the developing process; and a hard baking process is performed after the developing process to heat the wafer W. The baking chamber 470 performs a cooling process after an individual heating sequence. The baking chamber 4 includes a cooling stomach plate 471 or a heating plate 472. The cooling plate 471 has a cooling element 473, such as a quench water or thermoelectric module. The heating plate 々π has a heating element 474, such as a heating wire or a thermoelectric module. The heating plate 472 and the cooling plate \71 can be located in individual baking chambers 470. Alternatively, some of the baking chambers 420 may have only the heating plate 472, while others may have only the cooling plates 47. As described above, the developing module 400 and the coating module 401 are separated from each other. Moreover, the coating module 401 and the developing module 402 can have the same chamber arrangement when viewed from above. (Second Buffer Module) The second buffer module 500 serves as a channel for transporting the wafer w between the coating/developing module 400 and the exposure rain/after processing module. In addition, the first buffer mode, 150() performs a cooling program and an edge exposure program for w. The second buffer 500 includes a frame 51 〇, a buffer 52 〇, a 17/41 201036092 5 first cavity - a second cooling chamber 54Q, an edge exposure chamber rush 2 2 - / ΐ, Jane Robota. The frame 510 is formed in a rectangular shape. The light-reducing room 55〇1 tempering chamber, the second cooling chamber 540, and the edge exposure 520g buffer robot 56G are disposed in the frame 510.绫U20, the first cooling chamber 53〇 and the edge are exposed to the height of the corresponding coating module. The second cooling chamber is to: the height of the = group 402. Buffer 52. The first cooling chamber and the first cold chamber 54 are continuously extended along the line. When viewed from above, the buffer should be separated from the bean of the first cooling chamber 530 by a predetermined distance from the 12 0 550 ^ , ° "buffer state" 20 of the coating module ^. The first buffer robot 56 is buffered. The device is similar to the section (4), following the day and day ^ second ^ = edge exposure between the chamber and the buffer please. The third can have similar to the first-buffer robot 3 (9) at 14::= 530 and the edge exposure chamber The first two Ι ί: 1 processed wafer ~ execution program. That is, W. The first cooling chamber pulls the wafers processed in the group 4〇1 such as /, the buffer chamber 30 〇 cooling chamber 35Θ =T The wafer W processed in the first cooling chamber 530 is exposed by the impurity exposure chamber 550. The buffer 520 is temporarily stored in the front of the wafer w chamber module 601. =ΐΓ^9Β] w°_Second cooling chamber 540 at wafer (4) ii Γ regroup 402 * 'The cold part has been processed in the module 602 " treated wafer W, the following will It will be described. The second buffer module can be 18/41 201036092 package, and the other is located in the buffer corresponding to the height of the developing module 402, and is processed in the remaining 6G2 after processing. The wafer w can be transferred to the developing module 402 after being temporarily stored in another buffer. (Pre-exposure/post-processing module) Pre-exposure/post-processing module_In the first program and the exposure sequence=program 'and perform a pass between the exposure program and the second program = when the exposure unit 9 (8) performs a liquid wetting lithography process Ο Ο = light / post-processing module _ can perform the light sequence of the coating protective layer, the second lithography The program protects the photoresist on the wafer w. This: after the light treatment, the cleaning can be performed after the exposure, and when the chemical amplification is applied to the coating process, the exposure is followed by The processing module (4) can perform the post-exposure bake process. The pre-/post-processing module _ includes - the pre-processing module 601 fish 1:=:2, the pre-processing module 601 is executed before the exposure program - processing the W-touch After processing, the module 602 executes a program of == after the exposure process. Before processing, the module is processed and the module is processed, the system module is set, after processing, the module 6〇1 is set after processing. The height of the front module 6〇1 and the coating module Xianxiang=嶋-protective layer coating chamber for baking=1: ^ cavity to 63G' Continued in the second direction 14. Because the f coating chamber (10) and the feeding chamber (4) have a return chamber (4) placed in the middle of the room and each other _. A plurality of coating chambers 6U) are in the third The directions 16 are stacked on each other. Alternatively, a plurality of tilting chambers in each of the first and third directions 12, 16 are re-chambers - in the third direction 16 a plurality of scales ^ 19/41 201036092 chamber The 620 can be arranged in each of the first and third directions 12, 16. The return chamber 630 and the first cooling chamber of the second buffer module 5A are juxtaposed in the first direction 12. The pre-treatment robot 632 is located within the return chamber 630. Return the chamber (4) - generally square or rectangular. The pre-processing robot 632 transmits crystal between the protective layer coating chamber 610, the baking chamber 62, the buffer 520 of the second buffer module 500, and the first buffer 72 of the interface module 7A. The circle w ' will be described below. The pre-processing robot 632 includes a machine hand 633, a robot arm 634, and a bracket 635. The robot hand 633 is fixedly mounted on the robot arm 634. The robotic arm 634 is configured to be expandable, contractible, and rotatable. The robotic arm 633 is transferred to the bracket 635 for linear movement along the bracket 635 in the third direction 16. The protective layer coating chamber 610 coats the protective layer on the wafer butt to allow the liquid to infiltrate the lithographic layer. The protective coating chamber (10) includes a housing 61 - a bracket plate 612 and a nozzle 613. The outer casing 6 is a cup-shaped shape with an open top surface. The holder plate 612 is located inside the casing to support the wafer W. The bracket plate 612 is set to be rotatable. The nozzle (1) supplies a protective liquid (such as liquid) for the protective layer to the wafer W. The nozzle 613 has a circular shape to supply the protective liquid to the wafer core. 'Selectively, the nozzle 613 may have a length corresponding to the diameter of the wafer w, with a slit π. In this case, the bracket plate 612 can be a fixed shape. The protective liquid includes a foamed material. The protective liquid may be coated with a protective liquid from the central portion of the wafer W as the protective layer coating chamber _ 旋转 is rotated on the holder 612. The baking chamber 620 heats the wafer w that has been coated with a protective layer. 20/41 201036092. The supply chamber to 620 has at least one cooling plate 621 or heating plate 622. The cooling plate 621 has a cooling element 623 such as a cooling water or a thermoelectric module. The heating plate 622 has a heating element 624' such as a heating wire or a thermoelectric module. Each of the heating plate 622 and the cooling plate 621 may be located in a baking chamber 620. Alternatively, some of the toasting chambers 620 may have only the heating plate 622, while others may have only the cooling plate 621. The post-processing module 602 includes a cleaning chamber 660, an exposure post-baking chamber 670, and a return chamber 680'. The cleaning chamber 660, the return chamber 680, and the exposure post-baking chamber 670 are continuously Arranged in a line extending in the second direction 14. Accordingly, the cleaning chamber 660 and the post-exposure bake chamber 670 have the return chamber 680 interposed therebetween and spaced apart from each other in the second direction 14. A plurality of cleaning chambers 660 are disposed in different layers in the third direction 16. Alternatively, a plurality of cleaning chambers 660 can be arranged in each of the first and third directions 12, 16. A plurality of post-exposure bake chambers 67 are disposed in different layers on a line extending in the third direction 16. Alternatively, a plurality of exposure post-baking chambers 670 can be arranged in each of the first and third directions 12, 16 〇. The return chamber 680 and the second cooling chamber 540 of the second buffer module 50A are juxtaposed in the first direction 12 when viewed from above. The return chamber 68 is generally square or rectangular. The post-process robot 682 is located in the return chamber 68〇. The post-process robot 682 is configured to transfer between the post-exposure bake chamber 67, the second cooling chamber 54 of the second buffer set 500, and the second incubator 730 of the interface module 7A. The wafer w will be described below. The post-processing module 602 = post-processing benefit 682 may have the same structure as the pre-processing robot 632 of the pre-processing module 6〇1. The cleaning chamber 660 cleans the wafer w after the exposure process. The cleaning chamber 66〇 21/41 201036092 includes a housing 66, a bracket plate 662, and a nozzle 663. The outer casing 061 is cup-shaped with an open top surface thereon. The bracket plate 662 is located within the outer casing 661 and supports the wafer W. The bracket plate 662 is rotatable. The nozzle 663 supplies the cleaning liquid to the wafer W on the holder plate 662. The cleaning solution can be water such as deionized water. When the wafer w on the holder plate 662 is rotated, the cleaning chamber 660 supplies the cleaning liquid to the central portion of the wafer. When the wafer is rotated, the nozzle 663 can be linearly moved or rotated from the central region of the wafer W to the edge region. The post-exposure bake chamber 670 heats the wafer W that has been treated with the deep ultraviolet ray in the exposure process. The post-exposure bake process enhances the properties of the acid produced by exposure of the photoresist by heating the wafer W to change properties. After exposure, the baking chamber 670 has a heating plate 672 having a heating element 672' such as a heater wire or thermoelectric module. The post-exposure bake chamber may further include a cooling plate 671 having a cooling element 673 such as cooling water or a thermoelectric module. Alternatively, a baking chamber having only the cooling plate 671 can also be used. In the above description of the pre-exposure/post-processing module 600, the processing group 601 and the post-processing module 6〇2 are completely separated from each other. In addition, the return chambers 63 of the front module 601 have the same size as the chambers 680 of the second module, so they completely overlap each other in plan view. There are also 4 dull layer coating chambers to 61 〇 having the same size as the cleaning chamber 660' so that the protective layer coating chamber 61 〇 and the cleaning chamber _ will completely overlap each other in plan view. In addition, the chambers 620 have a small contrast with the exposed green baking chamber 670, which will completely overlap each other at the time of the ship. (Interface module) "face module 7〇〇 transfers wafer w between pre-exposure/post-processing module_and exposure unit 900. The interface module 7A includes a frame m a 22/41 201036092 buffer 720, a second buffer 730, and an interface robot 740. The second robot 740, the first buffer 72A, and the second buffer 73 are located in the C 710. The first and second buffers 72, 73 are separated from each other and stacked with each other. The first buffer 72 is disposed on the second buffer 73A. The second buffer II 720 is disposed at a height corresponding to the pre-processing module 6〇1. The first buffer 730 is set to a degree corresponding to the post-processing module 602. In a plan view, the first buffer 720 and the return chamber 630 of the pre-processing module 601 are arranged on the same line in the first direction 12. The second buffer 〇 ' is on the same line as the first direction 12 of the service module 602. The "face machine 740 is spaced apart from the first and second buffers in the second direction 14 series. The interface robot 74Q transfers the wafer w between the first buffer 720, the second buffer 730, and the exposure unit 9A. The interface robot 74 has a structure similar to that of the second buffer robot. The first buffer pirate 720 is transferred to the exposure unit 900 on the wafer w. The second processing temporarily processes the brain group _ processed (four) w. The second buffer 730 temporarily stores the wafer w processed by the exposure unit 9 before the wafer W is transferred to the post-processing module 6〇2. The first bumper has a housing and a plurality of brackets 722. The stent melons are placed in the outer casing = inner and are separated from each other by a third party. Each of the brackets is attached to the melon, and each is round and round. The outer casing 721 has openings corresponding to the front robots 632, respectively, so that the interface robot 740 and the handler 632 can send the crystals (4) to the holder 722 in the outer casing 721 or take out the wafer W from 79n\722. The second buffer 730 has a structure similar to that of the first buffer. However, the outer casing 731 of the second buffer 730 has an opening corresponding to the interface robot 740 and the post-processing robot (Fig. 23/41). Not shown in 201036092). The number of brackets 722 of the first buffer 720 may be the same as or different from the bracket 732 of the second buffer 730. (Program) The procedure executed by the first preparation 1 will be described below based on an embodiment. Figs. 5A and 5B are flowcharts showing a procedure executed in the substrate processing apparatus 1 of the first embodiment. The container 20 of the grain nano wafer W is loaded to the loading table loaded with 埠1〇〇 = 〇 (S112). The door of the container 20 is opened by the door opener. The indexing robot 22 攸 = = 20 takes out the wafer w and transports it to the second buffer 33 〇 (sn4). The first buffer robot 360 transfers the wafer w from the second buffer 33 to the first buffer (S116). The coating robot 432 transfers the wafer w from the first buffer 320 to the supply chamber 42〇(8)(8) of the coating module 4〇1, and the chamber 42〇 continuously executes the pre-program and cooling procedures (§ 涂Layer 432 takes the wafer from the torrefaction chamber 42 and transports it to the photoresist coating 3 = 4_22). The photoresist coating chamber _ coats the photoresist to the wafer w chamber 4^2, and the coating machine 432 performs the soft baking of the wafer W from the photoresist coating w. i=^42C) (sl26 ). The scale chamber 42g is on the wafer =, the person 432 takes the wafer W out of the baking chamber 42, and the first cooling chamber (8) 3 of the punch module 5〇0. The cold program of ^ is cooled in the first cooling chamber 53 (4). The wafer w processed in the second chamber is from the second buffering machine 7 to the edge exposure chamber (S134). Edge exposure chamber 550 area (8) 36). The crystal gjw processed to the buffer 520 (S138) is processed at the edge exposure from September to 550. The robot 632 picks up the wafer W from the buffer 52 and transfers it to the pre-processing module 601 (S140) by the slave-buffer from 560 to 24/41 201036092. The protective layer coating chamber 61 is coated on the wafer W (8142). Next, the pre-processing robot 632 takes out the wafer W from the protective layer coating chamber 610 and transports it to the baking chamber 620 (S144). The baking chamber 620 performs a heat treatment process such as a heat and heat program (S146). The pre-process robot 632 takes the wafer W out of the baking chamber 620 and transports it to the first buffer 72 of the interface module 700 (s48). The interface machine 74 transfers the wafer W from the first buffer 720 to the exposure unit 900 (S150). The wafer W is exposed in the exposure unit 9 (§ 152). Next, the interface robot 740 transfers the wafer w from the exposure unit 9A to the second buffer 730 (S154). The processing machine 682 takes the wafer W out of the second buffer 730 and transmits it to the cleaning chamber 660 of the processed module 602 (S156). The cleaning chamber 660 supplies cleaning liquid to the surface of the wafer to clean the wafer rows (8158). After the wafer w is cleaned with the cleaning liquid, the processed machine 682 takes the wafer W out of the cleaning chamber 660 and transfers it to the post-exposure flooding chamber 670 (S160). The cleaning liquid attached to the wafer w is removed by the heating plate 672 which heats the wafer W, and at the same time, the acid generated by the photoresist is enhanced to complete the change in the properties of the photoresist (S162). After processing, the robot 682 transfers the wafer W from the post-exposure baking chamber 670 to the second cooling chamber 540 of the second buffer module 5A (S164). The wafer w is cooled in the second cooling chamber 540 (S166). The developing robot 482 takes out the wafer w from the second cooling chamber 540 and transfers it to the baking chamber 470 of the developing module 402 (S168). The baking chamber 470 successively executes the post-baking program and the cooling program (S170). The developing robot 482 takes the wafer W out of the baking chamber 47 and transfers it to the developing chamber 25/41 201036092, 460 (S172). The developing chamber 46 〇 supplies the developing solution to the wafer w to execute the developing process (S174). Next, the developing unit 482 transfers the wafer | from the developing chamber 460 to the baking chamber 470 (S176). The baking chamber 470 performs a hard baking process on the wafer trade (S178). The developing robot 482 takes out the wafer W from the baking chamber 470 and transfers it to the cooling chamber 35Q (si8()) of the first buffer module. The cooling chamber ^ 350 performs a process of cooling the wafer W (S182). The index robot 36 transmits the f circle eW from the cooling chamber 350 to the container 2G (S184). Alternatively, the machine 482 transfers the wafer w from the flooding chamber 47〇 to the first buffer 、, and 3〇〇, and then the wafer % can be transferred to the container by the indexing robot 36. . According to the embodiment of the first embodiment, the pre-exposure/post-processing module is slanted between the coating/developing module gamma and the interface module. Therefore, the (10) before the light program can be immediately before and after the exposure, and there is no protective layer in the exposure/post-processing module. Therefore, the structure of the pre/exposure processing module _ is equivalent and the time for executing the program can be reduced. When it is used from /'i, when using chemically amplified photoresist, it is important to perform the timing of light 2>2 after the exposure procedure. According to the embodiment of the first figure, before the exposure of the two round wheels to the display group*, the purpose of enhancing the acid can be quickly achieved by 600 before the exposure. In the night, 2 wl, according to the embodiment of the figure, the cleaning chamber _ is only used for cleaning: washing procedure. That is, the cleaning chamber 660 does not add to the wafer w. Dry_order. The process of drying the wafer w, for example, the process of drying the wafer w is performed simultaneously with the acid in the post-baking chamber 670 of the strong exposure 26/41 201036092. Therefore, the time taken for the program can be reduced as compared to the time for cleaning and drying the wafer in the cleaning chamber 660. (Modified Example) Various modified examples of the substrate processing apparatus 1 will be described below. The indexing robot 220 can be configured to transfer the wafer w directly to the first buffer 320. The cooling chambers 350 may be stacked on each other within the first buffer module 3''. In addition, a plurality of first cooling chambers W0, a plurality of second cooling chambers 540, and a plurality of edge exposure chambers 550 may be located in the second buffer module 5''. In addition, the first buffer module 300 may not include the cooling chamber 35A. In this example, the wafer w can be transferred directly from the coating module 4〇1 to the first buffer 32〇' by the coating robot 432, and the index robot 22 can transfer the wafer W stored in the first buffer 320. To the container 2〇. Further, the wafer w can be transferred from the developing mold, the group 4〇2 to the second buffer 33〇 by the developing robot 4S2, and the index robot 220 can transfer the Q stored in the second buffer 33〇 to the container 20. Further, in the first buffer module 3, the positions of the first buffer module and the cooling chamber 350 are exchangeable. Also, the coating/developing module 4 can include only one module instead of the coating and the developing module disposed in different layers. In this example, all of the coating chamber, the developing chamber, the baking chamber, and the return chamber can be located within the module. In this example, the first buffer module 300 may not include the first buffer 320 and the first buffer robot 36. Further, the second buffer module may not include the first cooling chamber 53A. In this example, the wafer w processed in the coating module 4〇1 is directly transferred to the buffer 52〇 by the 27/41 201036092 coated robot 432. Further, the second buffering module 500 may not include the second cooling chamber 54Q, and the second balancing module may have an additional buffer. In this example, the processed crystal UW processed in the module 6〇2 can be processed by the post-processing robot 682 to the additional buffer. In addition, the present invention may not have the second buffer module 5〇〇, and before the exposure/ The post-processing module 600 can be disposed adjacent to the coating/developing module 40Q. The f-light front/rear processing module 600 may have only one module instead of the pre-processing module 601 and the post-processing module 602. In this example, all of the blanket coating chamber 61G, the baking chamber (10), the cleaning chamber _, and the exposure post-baking chamber 670 may be located within the module. - After the wafer W is cleaned, the cleaning liquid adhering to the wafer can be removed in the other chambers instead of being removed in the post-exposure baking chamber 67. Further, the rinsing chamber to 660 may include, in addition to the nozzle for supplying the cleaning liquid, a nozzle for supplying dry air. In this case, the scrubbing liquid adhering to the wafer can be removed before the wafer w is heated in the post-exposure baking chamber 670. . In addition, the processed module 6〇2 may not include a cooling plate. The step of cooling the crystal w can be carried out only in the cooling chamber of the second buffer module 5〇〇. In this case, the plurality of labor chambers may be disposed in the second buffer module 500 and stacked on each other. In addition, the positions of the pre-processing module 601 and the post-processing module 6〇2 can be interchanged. In this example, the coating module 401 and the developing module 4〇2 may be disposed at respective heights corresponding to the pre-processing module 601 and the post-processing module 6〇2. In addition, a protective layer removal chamber may be included in the post-processing module 602 for removing the protective layer after the exposure process. In this example, the layer 28/41 201036092 layer on wafer w can be removed prior to the development or ashing process. External Γ = light unit _ The liquid lithography method is performed so that the protective layer coating chamber 6G1 may not include the protective layer coating chamber to (10). In this case, the pre-exposure/post-processing module 600 may include only the post-processing group 602 without the pre-processing module 601. Further, when the exposure unit 900 uses a light source other than deep ultraviolet light, the rear wedge 'group 602 may not include the post-exposure flooding chamber 67A. Ο 产 Exposure chamber 55〇 can be located in the interface module. The H-edge exposure program can be performed between the _ _ _ first program and the wafer cleaning program. Alternatively, the edge can be performed between the post-bake baking process and the developing process. , ', 壬 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六 第六'', ', (5) ρ's phase shape 笫丄RFM Exception 14 is applied to the wafer W (eg

The pre-processing module _ is processed by the wheel in C. Wafer = f yuan 900. Exposure, exposure to selective light to the protective layer 16 and the photoresist 14 - select the field 18' to change the selection area ^ pre-/post-processing module post-processing module 6. 2: = light post-baking program and its Similar. The legacy is removed in the wafer sequence. The protective layer 16 and the selected area of the photoresist 14 29/41 201036092 18, after changing the properties, will be further removed (as shown in Fig.). Then t will be secreted in the unit: the ashing unit is removed (such as the sixth T deposition early element, the substrate processing equipment, the money, the field is fixed at the time of transmission) to perform cleaning or other similar procedures. Between the W and the above-mentioned embodiment, the etch process can be performed efficiently. In addition, if the chemical increase is used, the ^^ baking process is used, and the soil is subjected to the exposure after the exposure. The liquid can be removed by the acid in the post-baking unit, without the need to clean the nozzle before drying, so that the material can be saved. The use of the separate layer, because the protective layer is in the development process, before/after the exposure There is no need for single = and divide, chambers in the processing unit, so program time can be reduced. Early and exclusive protection layer removal chamber The above embodiments are used for example, but not limit the invention == God and Fan Book The scope of the patent application should be as follows: some improvements, enhancements, and other embodiments. Therefore, the cans of the second application are bounded by the widest range of patent applications, and are not limited by the limitations of the foregoing embodiments. Brief description] The illustration attached to this manual is used To provide an understanding of the present invention, and to constitute a part of the present specification. Illustrated ς 30/41 201036092 Exemplary embodiments of the invention, together with the description of the embodiments to explain the principles of the present invention Medium: x FIGS. 4 to 4 are schematic views of a substrate processing apparatus according to an embodiment of the present invention; FIGS. 5A and 5B are diagrams showing the substrate processing apparatus of FIG. A flow chart of a continuous process; and a pattern formed on a wafer, the sixth to sixth G diagrams are schematic diagrams of successive processes for use.

[Main component symbol description]

1 substrate processing equipment 4 second direction 20 container 120 loading rib 210 frame 221 robot arm 223 bracket 230 rail 310 frame 321 housing 330 second buffer 332 bracket 351 housing 353 cooling element 361 robot 363 bracket 401 coating module 2 First-direction 6 third direction 1〇〇planted into 20〇 cable bow module 220 cable bow robot 222 robot arm 224 base 300 first buffer module 32〇 first buffer 322 bracket 331 housing 350 cooling chamber Room 352 cooling plate 360 first buffering robot 362 robot arm 400 coating/developing module 402 developing module 31/41 201036092 410 photoresist coating chamber 412 bracket plate 414 nozzle 421 cooling plate 423 cooling element 430 returning chamber 433 Guide 435 Machine Arm 437 Base 461 Housing 463 Nozzle 470 Baking Chamber 472 Heating Plate 474 Heating Element 482 Developing Robot 484 Robot Hand 486 Bracket 500 Second Buffer Module 520 Buffer 522 Bracket 531 Housing 540 Second Cooling Chamber Room 560 second buffer robot 601 processing front module 610 protective layer coating chamber 612 bracket plate 411 housing 413 nozzle 420 baking chamber 422 heating plate 424 heating element 432 coating robot 434 robot hand 43 6 bracket 460 developing chamber 462 bracket plate 464 nozzle 471 cooling plate 473 cooling element 480 return chamber 483 rail 485 robot arm 487 base 510 frame 521 housing 530 first cooling chamber 532 bracket 550 edge exposure chamber 600 before exposure / Post-processing module 602 processing module 611 housing 613 nozzle 32/41 201036092

620 baking chamber 621 cooling plate 622 heating plate 623 cooling element 624 heating element 630 returning chamber 632 processing front robot 633 robot hand 634 robot arm 635 bracket 660 cleaning chamber 661 housing 662 bracket plate 663 nozzle 670 exposure post-baking chamber Room 671 Cooling Plate 672 Heating Plate 673 Cooling Element 674 Heating Element 680 Returning Chamber 682 Processing Robot 700 Interface Module 710 Frame 720 First Buffer 721 Housing 722 Bracket 730 Second Buffer 731 Housing 732 Bracket 740 Interface Robot 900 Exposure Unit W Wafer 12 Film 14 Resistor 16 Protective layer 18 Selection area 13 Exposure area 33/41

Claims (1)

201036092 VII, Shen Qing patent scope: 1 second preparation 'it is used to process - the substrate, the equipment includes: a #车', the middle set - the container containing the substrate; a younger one buffer module, and there - ° ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Developing process; 仏 基板 仃 仃 光 光 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二(10) The first step of the exposure step is exposed; and, between the shoe sequences, the substrate-interface module is connected to the exposure module, the loader module, the index module, The first &..., the second buffer module, the exposure portion 2: the mysterious coating / display 2: =_- on the line extending in the - direction and the such as the application of the patent The upper front/rear processing module includes a factoring device, wherein the exposure chamber applies a protective layer on the substrate and the 曰Γ θ chamber The protective layer coating chamber yl two shuttle processing device, wherein the exposed plate. 3- (9) chamber, the cleaning chamber cleans the base 4. If Shen Qing patent scope third top % front/rear processing module contains %', which is exposed in 8 layers - pre-processing module and A 34/41 201036092 processed module, wherein the protective coating chamber is disposed in the pre-treatment group and the cleaning chamber (four) is disposed in the money module. 5· It is expected that she (4) 4 rewards the substrate processing equipment, which handles the magic model, and more I § ; ^ roasting chamber and - pre-processing robot, the roasting chamber to the miscellaneous board binding - E-baked procedures, The pre-process robot transports the substrate between the bake chamber and the protective layer coating chamber; In the s, the back mold, and, moreover, the _exposure post-baking chamber and the post-treatment robot. After the exposure, the flooding chamber performs a chess on the substrate after the exposure process, and passes from the Qijina fiber roasting chamber. The substrate processing apparatus according to item 5 of the monthly patent=group further includes an edge exposure chamber and a second buffer machine: the two-face exposure chamber exposes the edge of the substrate, the second buffer The pirate transports the substrate to the edge exposure chamber. The substrate processing apparatus of the above-mentioned item 11, wherein the second aspect further comprises: a cooling chamber that cools the substrate. The substrate processing apparatus according to item 5, wherein the coating layer comprises a coating layer and a developing mold, and the coating module comprises a coating chamber k _ ^ —1 Sixth Qizhizhi and Yibao: Increasing the machine to coat the photoresist between the baking chamber and the coating chamber of the coating module Transmitting the substrate; and, the developing module comprises a prominent person, the cleaning chamber m--the chamber and the developing machine, the __f material, the hot-baked chamber, the _ shadow robot The substrate is transferred between the baking chamber of the developing module and the developing chamber of the 35/41 201036092. The substrate processing apparatus of claim 8, wherein the coating composition is at the same height as the pre-processing module, and the display is at the same height as the processed module. The substrate processing apparatus of claim 9, wherein the second buffer module comprises a pair of cooling chambers for performing a cooling process on the substrate, and the second buffer module The buffer is located at a pair of layers to be coated; and π is located at a height of a pair of developing modules. 11. The substrate processing apparatus of claim 5, wherein the interface module comprises: a first buffer disposed at a height of a pair of modules to be processed and temporarily storing the substrate; a second buffer 'which is disposed in a pair of temporary processing modules to temporarily store the substrate; and w an interface robot' between the first buffer and the exposure unit and in the second buffer The substrate is transferred between the device and the exposure unit. 12. The substrate processing apparatus of claim 5, wherein the protective layer coating chamber, a return chamber having the pre-treatment robot, and the baking chamber of the pre-processing module are in a plan view The timing is continuously arranged in a second direction perpendicular to the first direction; and the cleaning chamber, a return chamber having the processed robot, and the post-exposure baking chamber are continuously arranged in a plan view In the second direction. 13. The substrate processing apparatus of claim 12, wherein the returning chamber having the pre-processing robot and each of the returning chambers having the processed robot and the second buffer module The buffer is juxtaposed in the direction of the _ 36/41 201036092. 14. The substrate processing apparatus according to Item 13, wherein the coating group and the group comprise a coating layer disposed on the family layer, and the developing mold comprises a coating chamber and a baking chamber. And the coating machine processing chamber transfers the miscellaneous (four) on the substrate and the miscellaneous roasting chamber. The coating robot transfers between the baking chamber and the ▲ soil chamber of the coating module. a substrate; and a read;: a developing chamber, a baking chamber, and a returning chamber, wherein the developing process is performed; the chamber for heat treatment (four) has a chamber in the developing module a developing robot that transfers the substrate between the baking chamber and the worker; and the returning chamber of the core=machine and the second mother and the second buffer module having the developing robot The buffer is juxtaposed in the direction of the brother in a plan view. The substrate processing apparatus of claim 13, wherein the second I edge exposes the light chamber and a second buffering robot, the wheel reads the second edge of the US plate, and the second buffering robot transmits the edge exposure chamber; and the edge Eyes two: ° ̄ ̄ ̄ ̄ buffer, the second buffer robot, and the straight = first = in the plan view is continuously arranged in the J 罘 10,000. a substrate processing device, which is implanted into a crucible, wherein the device is provided with a substrate, and the device comprises: an indexing module, and a container of the substrate; Transferring the base 37/41 201036092 coating/developing module to the loading cassette, and performing a photoresist coating process-exposure pre/post processing module with a developing process, and a substrate Between the light programs, and the exposure coating process and an exposure plate execution program; and Wang Xuan between the development programs, the loading port, the index module, and the light pre/post processing The module is arranged in the x ^ developing module, and the substrate is extended as described in claim 17; the front/rear processing module includes _ protection; The polishing chamber coats a protective layer on the substrate, and the protective layer coats the substrate processing apparatus, wherein the exposure K post-treatment includes "cleaning", and the cleaning chamber cleans the substrate 19 · The pre/post processing module as described in item 16 of the patent application scope is set to be in the Exposure first; wherein the pre-processing modulo 2 ======= chambers and the post-processing module comprises - the substrate processing apparatus according to item 19, wherein the processing: a baking chamber And pre-processing the robot, the baking chamber, the base, in a baking process, the robot transports the substrate between the baking chamber and the protective coating chamber before the processing; and: After the exposure, the baking chamber and the post-processing machine t1 are exposed and the baking chamber is subjected to a baking process after the exposure process, and the robot transmits the cleaning chamber between the cleaning chamber and the exposure baking chamber. Substrate. The substrate processing apparatus of claim 420, wherein the coating group; - coating, the coating of the rhinoceros ~ broken, a baking chamber and a coating machine to process the "two coatings on the substrate, the baking chamber heats the coating cavity layer view of the new roasting chamber and Ο Ο == a developing chamber, a wheel chamber, and a filming process, the drying chamber between the developing chamber and the 22::==: After processing, the module is located at the same level - high degree.冋度 u and the (four) module 23. ^ Please __ 22 of the ^ processing equipment, including the shadow module and the pre-/post exposure: buffer state module, where the comprehensive crying a A ~ The buffer of the substrate. The substrate processing apparatus of claim 23, wherein the coating coating chamber, the returning chamber having the pre-processing robot, and the front module are temporarily stored. The baking chamber is continuously arranged in a second direction perpendicular to a disk in a plan view; /, the cleaning chamber, the return chamber having the processed robot, and the light post-baking chamber Continually arranged in the second direction in a plan view; ~ the coating chamber, the return chamber having the coating robot, and the baking chamber of the sound preparation module are continuously arranged in a plan view In the second direction ^^曰39/41 201036092, the developing chamber, the returning chamber of the feeding cavity of the female module, and the developing and the top view % are continuously made in the second direction; Have. The returning chamber of the robot before the processing of the Hai, the ancient „the robot with the processing/, the returning chamber with the 5 HM main layer robot, and the right=于===(4) Each _ _ _ The substrate processing apparatus according to the fourth aspect of the invention, further comprising a layer: a base between the developing module and the pre-exposure/post-processing module, wherein the buffer module includes - for temporarily The substrate processing apparatus of the item 26:=:T, further includes a 4th=5th second buffer module, the first buffer module is disposed on: two boards, and the money layer/ Between the developing modules, the second buffer module is disposed two-way: the layer, the coffee group, and the pre-exposure/post-processing mode of the pre-exposure/two-dimensional module - each of the second buffer modules is included The substrate processing device of claim 16 is further provided with a substrate processing device connected to an exposure module. 28. A substrate processing method for processing a substrate. a substrate, the method comprising: coating a photoresist on the substrate; applying a protective layer to the photoresist Performing a liquid immersion lithography process on the substrate on which the tilt layer has been applied; cleaning the substrate that has been processed by the liquid immersion lithography process; and 40/41 201036092 performing the substrate A developing procedure. 29. The method according to claim 28, wherein the method of performing the post-exposure bake process is performed after cleaning the substrate and before performing the developing process. 30. If applying for a patent | The substrate processing method according to the item, wherein the step of cleaning the substrate is performed by supplying a cleaning liquid. == The substrate processing method according to Item 29, wherein the steps of the two substrates are performed by the cleaning liquid, and the liquid system is removed by the post-exposure baking step, and the cleaning is performed on the back. The step of the substrate is performed immediately after the step. Nine, the baking procedure is in Qing 32. If the 28th layer of the patent application scope is removed in or after the development process, the protection zone is as claimed in the patent application. A portion of the layer is attached to the process of the development process, wherein the protection component is removed in the process of the process, and the protection is (4) 41/41