TW201028800A - System and method for treating substrate - Google Patents

Abstract

A method and system for treating a substrate are provided. The system includes a coating unit, a pre/post-exposure treatment unit, and a developing unit. Each of the units includes a load port and an index module. The pre/post-exposure treatment unit includes first and second modules that are arranged in different layers. The first module performs a process for coating a protective layer on the wafer before an exposure process. The second module performs a process for cleaning the wafer and a post-exposure bake process after the exposure process.

Description

201028800 VI. Description of the Invention: [Technical Field] The present invention relates to a substrate processing system and method, and more particularly to a method for performing a photolithography process on a wafer (photol i thography process) System and method. [Prior Art] In order to manufacture semiconductor components, various processes such as a cleaning process, a deposition process lithography process, a process of a lithography process, and an ion implantation process are required. In the high degree of integration of the semi-equivalent elements, the photography process used to form the pattern plays an important role. In general, a system for performing the lithography process includes: a coating unit for coating a photoresist onto a wafer; and a developing unit It is used for a wafer execution-development process that has undergone an exposure process; and a processing module having an interface for a fish to be directly connected. In recent years, with the high component X δ of the semiconductor element, the need to perform the exposure of the wire has been increased. Crystal _ appears in the device. Therefore, in the case of the substrate processing mold = the coating of the household and the material of the material, the treatment of the county is deteriorated. - [Invention] Engraving = for a substrate processing system and method 'which can be improved. The present invention also provides a substrate processing system and performing coating and developing systems, which can improve the repelling-exposure red rate process The invention also provides a substrate processing system that configures the processing chamber for performing the layout of the process. The present invention is not limited to the above, and other objects of the present invention will become apparent to those skilled in the art from the following description. A specific embodiment of the present invention provides a substrate processing system comprising: a coating unit for performing a coating process on a substrate; and an exposure before and after processing unit 'which is connected to an exposure unit' for The substrate processed in the coating sheet 7L performs an exposure process and performs an pre-exposure/exposure post-processing process; and a developing unit for performing a substrate that has been processed in the pre-exposure processing unit 70. Imaging process. Each of the coating unit, the pre-exposure processing unit, and the developing unit includes: a loading port on which a container for accommodating the substrate is disposed; and an indexing module from the container Removing or transporting the substrate to the container; and a processing module for performing a predetermined process on the substrate. The load port, the indexing module, and the processing module are arranged in sequence. The pre- and post-exposure processing unit further includes: a kneading module connected to the exposure unit, the interface module is disposed on one side of the processing module, and the indexing module is disposed on the other side of the processing module . In a specific embodiment, the processing module of the pre-exposure processing unit may include a plurality of modules and a second module disposed in different layers. The first module can include a protective layer coating chamber for coating a protective layer on the substrate, and a baking chamber for performing a heat treatment on the substrate. A robot for transferring a substrate between the protective layer coating chamber and the baking chamber. The second module can further include a cleaning chamber for cleaning the substrate. In addition, the second module may include an exposure baking chamber for performing an exposure post-baking on the exposed substrate; and a second robot for use in the cleaning chamber The substrate is transferred between the post-exposure baking chambers, 6/66 201028800. In other embodiments, the pre-exposure processing unit may further include a buffer module, and the Wei Chong module is disposed between the remaining processing modules. The buffer module includes: a first buffer, which is disposed at - corresponding to the height (10) of the first module, and a second buffer disposed at - corresponding to the second module The first and second buffer regions of the height and temporary storage substrate may be stacked on each other, and each of the first and second buffer regions may include a plurality of cuts. In addition, the buffer module of the pre-exposure processing unit may further include a buffer robot for transferring the substrate between the first and second buffers. The first and second buffers may be arranged side by side in a vertical direction. The buffer module can be disposed at a height corresponding to the first module and further includes a cooling chamber for cooling the substrate. In another embodiment, the interface module may include a first buffer disposed at a height corresponding to the height of the first module and temporarily storing the substrate, and a second buffer disposed on the corresponding buffer. a height of the second module and temporarily storing the substrate; and an interface robot for transferring the substrate between the exposure unit and the second buffer and between the second buffer and the exposure unit. In another embodiment, the coating unit may further include an edge exposure module, wherein the edge exposure module may be disposed on one side of the processing module, and the indexing module may be disposed in the processing module. The other side. In another embodiment of the present invention, an pre-exposure processing unit is configured to perform a desired process on a substrate on which a photoresist is applied before and after an exposure process, the pre- and post-exposure processing unit comprising: The shock port is provided with a container for accommodating the substrate; an indexing module for taking out the substrate from the container or transporting the substrate to the container; and a processing module, 7/66 201028800 for The substrate is executed-processed; and the interface is connected to an exposure unit. The loading port, the indexing module, the processing module, and the interface module are sequentially disposed in a - direction, and the processing module includes a protective layer coating chamber, and the protective layer coating chamber is used for A protective layer is applied over the substrate. The processing module can further include a cleaning chamber for cleaning the substrate. The processing module may further comprise a baking chamber for heat treating the substrate. The processing module can further include a post-exposure chamber for performing an post-exposure bake process on the exposed substrate. In a specific embodiment, the processing module may include a first module and a second module disposed on different layers, wherein the protective layer coating chamber may be disposed in the 帛❿-module, and the cleaning room may be Set in the second module. The processing module may further include a baking chamber disposed in the first module and used for the heat treatment base robot, which is disposed in the first module and used in the protective layer coating chamber Transferring a substrate between the baking chambers; an exposure baking chamber disposed in the second module and configured to perform an exposure-bake-baking process on the exposed substrate; and a second robot disposed on the second robot The second module is 'and used to feed the substrate in the clean room and the post-exposure chess room. 0 / other frequency real-time, the front and rear of the exposure unit may further comprise a buffer module 'the buffer module is disposed between the indexing module and the processing module', wherein the module may include a - buffer a region disposed at a height corresponding to the height of the first module and temporarily storing the substrate; and a second buffer region disposed at a height corresponding to the second module and temporarily storing the substrate. The first and second buffers may be stacked on each other, and each of the first and second buffers may include a plurality of baffles, and the substrate is separately disposed on the support. The buffer module can further include a buffer machine 8/66 201028800 person's for transferring the substrate between the first and second buffers. The first and second buffers may be arranged side by side in a vertical direction. The buffer module can be disposed at - corresponding to the height of the first module and further including a cooling chamber ' for cooling the substrate. " 纟 other embodiments of the invention, the interface module may include a --buffer, which is placed at a height corresponding to the first module and temporarily stores the substrate, a second buffer, which is disposed on a substrate corresponding to the height of the second module and temporarily storing the substrate; and an interface robot for transferring the substrate between the first buffer Φ and the exposure unit and between the second buffer and the exposure unit . The first and second buffers may be stacked on each other, and each of the first and second buffers may include a plurality of supports, and the substrates are respectively disposed on the support. Is the mouth more in the present invention? Other embodiments, a pre- and post-exposure processing unit for performing a desired process on a substrate on which a photoresist is applied before and after the exposure process, the pre- and post-exposure processing unit comprising: a container for accommodating the substrate is disposed on the loading port; a spring indexing module that takes the substrate from the container or transports the substrate to the container; and a processing module that performs a process on the substrate; The buffer module is disposed between the indexing module and the processing module; and an interface module is connected to an exposure unit. The loading port, the indexing module, the buffer module, the processing module, and the interface module are sequentially disposed in a first direction, and the processing module includes first and second layers disposed on different layers Module. The first group includes: a protective layer coating chamber for applying a protective layer on the substrate, a baking chamber for heat treating the substrate; and a reflow chamber having a first robot The substrate is transferred between the protective layer coating chamber, the baking chamber, the buffer module, and the interface module. The second module comprises: 9/66 201028800 a clean room for cleaning the substrate; an exposure post-baking chamber for performing an exposure post-baking process on the substrate; and a reflow chamber equipped with a a second robot for transferring wafers between the clean room, the post-exposure bake chamber, the & group, and the interface module. In other specific embodiments, the protective layer coating chamber, the reflow chamber equipped with the first robot, and the baking chamber may be sequentially disposed in a second direction, and the cleaning chamber is equipped with the second robot The reflow chamber and the post-baking chamber may be sequentially disposed in the second direction.

In other embodiments, the first module can be disposed on the second module. The buffer module may include: a first buffer disposed at a height corresponding to the height of the first module and temporarily storing the substrate; and a cooling chamber disposed at a height corresponding to the second module And used to cool the substrate. The first buffer zone and the cooling chamber may be arranged side by side in a vertical direction. The first buffer may be disposed in line with the return chamber of the first module when viewed from the top in the first direction. In still other specific embodiments, the buffer module may further include: a second buffer disposed on the second module storage substrate; and a buffer robot in the first ^ Transfer the substrate between the two buffer regions. The first buffer and the buffer robot may be disposed in a second direction perpendicular to the first direction from the top view. In still another specific embodiment of the present invention, a substrate processing method includes: coating a photoresist on the substrate; coating a protective layer on the substrate on which the photoresist is coated; The substrate on which the protective layer is coated is subjected to a liquid immersion lithography process; cleaning the substrate that has been processed in the liquid immersion lithography process and performing a process on the substrate Imaging process. The coating of the protective layer and the clearing of the substrate 10/66 201028800 / 处理 before and after the exposure processing alone = performing the liquid infiltration lithography process ===, the processing of the unit and the photoresist is performed at 70 in the morning In a straight line. In the unit. The implementation of the development process; Hai = in the coating unit separated by the coating unit separated by the front and rear processing units. The system is implemented in a pre- and post-exposure process. In a specific embodiment,

The developing process is performed on the substrate after cleaning the substrate. The cleaning substrate of the substrate is subjected to a post-exposure bake and the remaining (4) remaining on the substrate is supplied to the substrate for execution without drying the substrate by supplying a fluid. ",, remove, and be clean: by supplying the cleaning liquid to the substrate, the cleaning liquid remaining on the substrate is exposed to the level (4), and the profit is followed by the wire 4 The outer side of the front and rear processing unit is removed. The protective layer can be removed in the development process to be removed in an ashing process. Sickle [Embodiment] The following will refer to the accompanying drawings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT(S) The present invention may be embodied in the same form and should not be construed as being limited to the specific embodiments described herein. The present invention will be fully described in its full scope, and the scope of the present invention will be fully described by those skilled in the art. In the drawings, the size of layers and regions may be exaggerated for clarity of the description. The system is used to perform a photolithography process on a substrate such as a flat panel display or a semiconductor wafer. In particular, the system of the exemplary embodiment is used to perform a process for processing a substrate, such as a coating system 11/66 2010288 00, a developing process, and other processes required before and after a liquid immersion lithography process. In the following description, a case in which a wafer is used as a substrate will be exemplified. A schematic view of a substrate processing system according to an exemplary embodiment of the present invention. Referring to the first figure, a substrate processing system i includes a coating unit 3A, an pre-exposure processing unit 4A, and a developing unit 5 is disposed. The coating unit 3000 and the pre- and post-exposure processing unit 4000 are separated from each other. Between the coating unit 3 and the pre- and post-exposure processing unit 4, an automatic The transfer unit 1000 or a worker transfers a wafer w. The wafer W is transferred while being stored in a container (2 in the second figure). Here, the container 2000 is configured to be sealed. For example, a front wafer transfer cassette having a front door can be used as the container 2000. In the following description, a coating unit 3000, a pre-exposure processing unit 4000, and Imaging unit 5000 The degrees of direction are arranged side by side with each other. However, the length directions of the coating unit 3〇〇〇, the pre-exposure processing unit 4000, and the developing unit 5〇〇〇 may not be arranged side by side with each other. The wafer W performs a first process. The first process includes: a coating process for applying a photoresist on the wafer; and a heat treatment process for before or after the coating process Heating and cooling the wafer W. ^ 7 The developing unit 5000 performs a second process on the wafer W. The second process includes: a developing process that uses a developing solution to remove the photoresist Forming a desired pattern; and a heat treatment process for heating and cooling the wafer W before or after the development process. 3 Hai exposure is post-processed as early as 4000 straight rows connected to an exposure unit 201028800 9000, the exposure The front and rear processing unit 4000 performs a third process. The third process package 3 is executed between the first process and the exposure process, and is executed between the exposure process and the second process. For example, when the exposure unit performs a liquid infiltration lithography process, the third process may include a process-simplified coating-protective layer, and the protective layer is exposed during the exposure lithography process in the liquid. The photoresist on the (four)w.

This U second process can include a process for cleaning the crystal BJ after the exposure process. In addition, when a chemically amplified photoresist is used for the coating process and deep ultraviolet light (DUV is returned to the exposure process, the third process may include a post-baking process performed after the exposure process. The respective units (coating unit) The second to fourth figures are schematic schematic views of the coating unit 3〇〇〇. That is, the second drawing is the view of the coating unit 3_ when viewed from above, the third The coating unit 3_ of the drawing H is a view when viewed in the direction "A", and the fourth drawing is the view of the coating unit 3 of the second drawing when viewed in the direction "B." In the second to fourth figures, the coating single illusion includes: the loading port 3100, the indexing module 32, the buffer module, and the processing module are all over an edge exposure module 35〇0. The loading port 31〇〇, the indexing module 32〇〇, the buffer module 33GG, the processing unit, and the edge exposure 35〇〇 are arranged in sequence on the straight line, and the straight line extends in the − direction. Load port 3 excitation, indexing module 32〇〇, buffer module 33〇〇, processing module late, and side-turning light to persuade Tongsaki The rotation will be referred to as "first direction 12", and the direction perpendicular to the first direction from the top view will be referred to as "second direction 14", and the first and second directions 12 and 14 of the vertical direction will be 13 /66 201028800 The direction will be referred to as "the third direction 16". The load port 3100 includes a plurality of mounting stations 312, and the container surface for accommodating the wafer W is disposed on the 3i20. The = 3120 is disposed at - In the two lines extending in the second direction 14, two loading stations 3120 are provided.

The indexing module 3200 transfers the wafer w between the container 2000 and the buffer module 3300 on the loading station 312 of the loading port 31〇〇. The sound module 3200 includes a frame 3210, an indexing robot, and a 3230. The frame 3210 is generally formed in the form of an empty rectangular parallelepiped. The frame 3210 is disposed between the load port 3100 and the buffer module 33A. The height of the frame 3210 of the indexing module 3200 can be lower than the frame 3310 of the buffer module 33 (described below). The indexing robot 322 and the guide rail 3230 are disposed in the frame 3210. The indexing robot 322 has a 4-axis driving structure so that a hand 3221 directly processing the wafer w can be rotated and moved in the first, second, and third directions 12, 14, and 16. In addition to the hand 3221, the indexing robot 3220 further includes an arm 3222, a support 3223, and a base 3224. The hand 3221 is secured to the arm 3222. The arm 3222 is provided to be expandable, collapsible, and rotatable. The building member 3223 is arranged to extend in a longitudinal direction of the third direction 16 thereof. The arm 3222 is coupled to the support 3223 so as to be movable along the support 3223. The support 3223 is fixedly coupled to the base 3224. The rail 3230 is provided to facilitate its lengthwise extension in the second direction μ. The base 3224 is coupled to the rail 3230 for linear movement along the rail 3230. Although not shown in the drawings, the frame 3210 is equipped with a door opener for opening and closing the door of the container 2000. Referring to the third figure, the buffer module 3300 includes a frame 3310, a 14/66 201028800 buffer region 3320, a second buffer 3330, a first cooling chamber 3340, a second cooling chamber 3350, and a buffer. Robot 3360. The frame 3310 is formed into an empty rectangular parallelepiped shape. The frame 3310 is disposed between the indexing module 3200 and the processing module 3400. The first buffer zone 3320, the second buffer zone 3330, the first cooling chamber 3340, the second cooling chamber 3350, and the buffer robot 3360 are disposed in the frame 3310. The second cooling chamber 3350, the second buffer zone 3330, the first cooling chamber 334, and the first buffer zone 3320 are arranged in the third direction 16 in the upward direction. The first cooling chamber 334 and the first buffer 3320 are positioned at the same height as the first module 3401 (described below) of the processing module 3400. The second cooling chamber 3350 and the second buffer zone 3330 are positioned at the same height as the second module 3402 (described below) of the processing module 3400. The buffer robot 3360 is positioned to be spaced apart from the second buffer 3330, the second cooling chamber 3350, the first buffer 3320, and the first cooling chamber 3340 by a predetermined distance in the second direction 14. Each of the first and second buffers 3320, 3330 temporarily stores a plurality of the wafers W. The second buffer 3330 includes a housing 3331 and a plurality of supports 3332. The supports 3332 are disposed in the outer casing 3331 and are spaced apart from each other in the third direction 16. A wafer w is disposed on each of the supports 3332. The housing 3331 is provided with openings (not shown) corresponding to the indexing robot 3220, the buffer robot 3360, and the second robot 3482 so that the indexing robot 322, the buffer robot 3360, and the second module 3402 One of the second robots 3482 (described below) can transport the wafer to or from the support 3332. The first buffer 332 has a structure similar to the second buffer 3330. However, the first buffer 332/15/66 201028800 housing 3321 is provided with an opening corresponding to the buffer robot 3360 and one of the first robots 3432 (described below) on the first module 3401. The number of the supports 3322 of the first buffer zone 3320 may be the same as or different from the number of the supports 3332 of the second buffer zone 3330. For example, the number of the second buffers 3330 of the support 3332 may be greater than the number of the supports 3322 of the first buffer 3320. The Buffer Robot 3360 transfers the wafer w between the first and second buffers 3320 and 3330. The buffer robot 3360 includes a hand 3361, an arm 3362, and a support 3363. The hand 3361 is fixedly mounted on a boiled 3362. The AI arm 3362 is assembled to expand and contract so that the hand 3361 can move in the second direction 14. The arm 3362 is coupled to the brace 3363' so as to be linearly movable along the support 3363 in the third direction 16. The branch 3363 has a length that extends from a position corresponding to the second buffer 3330 to a position corresponding to the first buffer 332. The support 3363 can be further extended to a position corresponding to the second buffer zone 3330 or a position corresponding to the first buffer zone 3320. The buffer robot 3360 can be assembled to have a 2-axis drive structure so that the hand 3361 moves only in the second and third directions 14, 16. The first and second cooling chambers 3340, 3350 cool the wafer W. The second cooling chamber 3350 has a housing 3351 and a cooling plate 3352. The cooling plate 3352 has a top surface on which the wafer w is disposed, and a cooling element 3353 that cools the wafer W. The cooling element 3353 can be formed from various components such as cooling water, a thermoelectric module, and the like. Additionally, the second cooling chamber 3350 can be provided with a lift pin assembly (not shown) that positions the wafer W over the cooling plate 3352. The housing 3351 is equipped with an opening corresponding to the indexing robot 3220 and the second robot 3482 (not shown in 16/66 201028800), so that the indexing robot 322 and the second module 3 are in the form of two movements ( The wafer w can be transported onto or from the cold plate 3352 or the wafer w can be removed from the cold plate. • Correction, the second cooling room can be equipped with a door (not shown) for opening and closing the opening. The first cooling chamber 3340 has the same structure as the second cooling chamber 3350. The processing module 3400 performs the required process before the crystal SJ W is transferred to the processing unit surface. The processing module is formed in a rectangular parallelepiped shape on the body A. The processing module 34 includes a first module 3401 and a second module 3402. The first and second modules are arranged in the same layer as the 3402. The first and second module periods may be provided, and the same process may be performed. For example, the first module is located above the second module 3402. The first module 3401 includes a photoresist coating chamber 341A, a flooding chamber 3420, and a return chamber 3430. The photoresist coating chamber 341, the baking chamber 3420, and the reflow chamber 3430 are sequentially disposed in the second direction. The silk resist coating chamber 3410 and the baking chamber 342 are adjacent to each other. The second direction 14 is spaced apart from each other with the reflow chamber 343 interposed therebetween. A plurality of the photoresist coating chambers 3410 are provided in the first and third directions 12, 16. In the drawings, six photoresist coating chambers 341A are exemplarily provided. The plurality of touch chambers 3 are provided on each of the first and third directions 12, 16. In the drawing, Six baking chambers 3420 are illustratively provided. However, six or more baking chambers 3420 may be provided. The return chamber 3430 and the first buffer zone 3320 of the buffer module 3300 are in the first direction 12 The first robot 3432 and the guide 3433 are disposed in the reflow chamber 3430. The recirculation chamber 3430 is substantially formed into a rectangle 17/66 201028800. The first robot 3432 is in the baking chamber 3420, The photoresist coating chamber 34〇〇, the first buffer region 3320 of the buffer module 33〇, the first cooling chamber 3340, the side The wafer buffer W is transferred between a first buffer 3520 (described below) and the first cooling chamber 354A of the exposure module 3500. The rail 3343 has a length extending in the first direction 12. The guide 3433 guides the linear motion of the first robot 3432 in the first direction 12. The robot 3432 has a hand 3434, an arm 3453, a flap 3436 and a base 3437. The hand 3434 is fixed. The arm 3435 is assembled to be expandable and retractable so that the hand 3434 can be moved in a horizontal direction. The support 3436 is arranged to extend a lengthwise direction thereof in the third direction 16. An arm 3435 is coupled to the support 3436 so as to be linearly movable along the support 3436 in the third direction 16. The support 3436 is fixedly coupled to the base 3437 and the base 3437 is coupled to the rail 3433 to enable ^ The guide rails 3433 are moved. ° All of the photoresist coating chambers 3410 have the same structure. However, the fineness of the photoresist used in the respective photo-coating chambers may be different from each other. For example, 'Chemistry can be used Amplifying photoresist as The photoresist coating coating chamber 431G coats the photoresist on the wafer crucible, and the photoresist coating chamber includes a casing, a branch plate 3412, and a nozzle 341 = »Xuan Waicheng The 3411 is formed in the shape of a cup having an open top end. The support plate 3412 is positioned in the outer casing 3411 to support the wafer slip. The support plate is assembled to be rotatable. The nozzle 3413 supplies the photoresist to the piano. The nozzle 3413 is formed on a wafer w. The nozzle 3413 is formed in a circular tube shape to supply a photoresist to the center of the wafer w. The nozzle may have a diameter corresponding to the diameter of the wafer w. Length, and having a slit type outlet: 18/66 201028800 In addition, the photoresist coating chamber 341{) may further include a nozzle 3414, a supply of cleaning liquid 艚 (^#石丄秘唷宵 34! 4, It is used to seal (such as deionized water) for cleaning the surface of the wafer W on which a photoresist will be applied. And f曰^ the bake chamber 3420 heats the wafer W. For example, before the photoresist is applied to the circle W, the silk paste is subjected to a preheating for heating the wafer W at a predetermined temperature. Removing organic matter or moisture from the surface; and on the wafer W

After the photoresist is applied, a soft baking process is performed. The baking chamber advancement also performs a cooling process after each heating and manufacturing. The flooding chamber 342A includes a cooling plate 3421 or a heating plate 3422. The cooling plate is equipped with a cooling element period, such as cooling the Qianglong group. The heating plate 3422 is provided with a heating element 3424, such as a heating wire or a thermoelectric module. The heating plate 3422 and the cooling plate 3421 can be provided in the respective grilling chambers 3. Alternatively, some of the grilling chambers 3420 may be provided with only the heating plate 3422, and other ovens may be provided with only the cooling plate 3421. The second module 3402 includes a photoresist coating chamber 346A, a baking chamber 3470, and a reflow chamber 3480. The photoresist coating chamber 346, the baking chamber 3470, and the reflow chamber 3480 have a photoresist coating chamber 3410 with the first module 34〇1, the baking chamber 3420, and the reflow chamber 343. 〇The same structure and configuration. Further, the reflow chamber 3480 has a second robot 3482 having the same structure as the first robot 3432 of the first module 3401. The second robot 3482 is assembled in the photoresist coating chamber 3460, the baking chamber 3470, the second buffer 333 of the buffer module 3300, and the second cooling chamber 3350, and the edge exposure module The wafer W is transferred between the second buffer 3530 and the second cooling chamber 3550 (which will be described later). 19/66 201028800 In the above processing module 3400, the first and second modules 34〇1 and 3402 are separated from each other. In addition, the first module 34〇1 has the same structure and configuration as the second module 3402 when viewed from above. The edge exposure module 3500 performs a process for exposing a peripheral region of the wafer w. The edge exposure mode 3500 includes a frame 351A, a first buffer 3520, a second buffer 353, a first cooling chamber 3540, a second cooling chamber 3550, an edge exposure robot 356, The first edge exposure chamber 3570 and a second edge exposure chamber 358 are disposed (below the first edge exposure chamber 3570 in the second figure). The frame 3510 is formed in a rectangular shape. The edge exposure chamber 3540, the first buffer 352, the first edge © exposure chamber 3570, the first cooling chamber 3540, the second buffer 3530, the second edge exposure chamber 3580, and the second cooling chamber 3550 are positioned in the frame 3510. Inside. The first buffer zone 3520, the second edge exposure chamber 357(), and the first cooling chamber 3540 are disposed at a height corresponding to the first module 34〇1. The second buffer zone 3530, the first edge exposure chamber 3580 and the second cooling chamber 3550 are disposed at a height corresponding to the second module 3402. The first buffer 352, the first cooling to 3540, the second buffer 3530, and the second cooling chamber 3550 are arranged in sequence from a straight line extending in the third direction 16. From the top inspection time, the 3H first buffer zone 3520 and the reflow chamber 3430 of the first module 3401 are arranged along a straight line extending in the first direction 12 . The first edge exposure chamber 3570 is spaced apart from the first buffer through the first cooling chamber 3540 by a predetermined distance in the second direction 14. The second edge exposure chamber is spaced apart from the second buffer zone 353 and the second cooling chamber 3550 by a predetermined distance in the second direction 14. The second edge exposure chamber 358 and the first edge exposure chamber 357G are disposed along a straight line extending over the third portion 16. The edge exposure robot 3560 is in the first buffer region 352, the first 20/66 201028800 edge exposure chamber 3570, the first cooling chamber 3540, the second buffer region 3530, the first edge exposure chamber 3580, and the first The wafer W is transferred between the two cooling chambers 3550. The edge exposure robot 3560 is positioned between the first edge exposure chamber 3570 and the first buffer zone 352A. The edge exposure robot 356〇 may have a structure similar to the buffer robot 3360. The first buffer 3520, the first cooling chamber 3540 and the first edge exposure chamber 3570 perform the following processes on the wafer w that has been processed in the first module 3401. The first buffer 3520 and the second buffer 3560 have the same structure as the first buffer 3320 of the buffer module 3300. The first cooling chamber 3540 cools the wafer W that has been processed in the first module 3401. The first cooling chamber 3540 has a structure similar to the first cooling chamber 3340 of the buffer module 3300. The first edge exposure chamber 357 (r) performs an exposure process on the edge of the wafer W that has been cooled in the first cooling chamber 3540. The wafer has been processed in the first edge exposure chamber 3570 Before the W is transferred to the first module 3401, the first buffer 352 〇 temporarily stores the wafer W. The second buffer 3530, the second cooling chamber 3550, and the second edge exposure chamber 3580 are already in the The wafer w processed in the second module 3402 performs the following process. The second cooling chamber 3550 cools the wafer W that has been processed in the second module 34〇2. The second cooling chamber 3550 There is a structure similar to the second cooling chamber 3350 of the buffer module 3300. The second edge exposure chamber 3580 performs an exposure process on the edge of the wafer w that has been processed in the second cooling chamber 3550. Before the wafer W processed in the second edge exposure chamber 3580 is transferred to the second module 3402, the second buffer 3530 temporarily stores the wafer W. Reference will be made to the fifth diagram A and the fifth. Figure B illustrates the coating process performed by the coating unit 21/66 201028800 3000. Figure 5A and 5B is a diagram illustrating a process performed on (4) in the coating unit 3_ according to a specific embodiment. The container 2000 accommodating the wafer W is disposed on the loading table 3120 of the loading port 31〇〇. (S112) The door of the container is opened by the door opener. The indexing robot 3220 takes the wafer w from the container 2000 and transports the wafer w to the second buffer 333 (S112) The wafer is transferred to one of the first and second modules 34〇1, 34〇2. When the wafer w is selected to be processed in the first module 34〇1, the buffer is buffered. The area robot 3360 transports the wafer w @ stored in the second buffer area 333〇 to the first buffer area 3320 (sl2〇), and the first robot 3432 extracts the wafer W from the first buffer area 3320. The wafer w is transported to the baking chamber 3420 (S112). The baking chamber 3420 sequentially performs a pre-bake process and a cooling process (S124). The first robot 3432 extracts the wafer from the baking chamber 342 w, and transporting the wafer w to the photoresist coating chamber 341 (S126). The photoresist coating chamber 341 〇 applies a photoresist onto the wafer w (S 128) Next, the first robot 3432 transports the wafer w from the photoresist coating chamber 3410 to the baking chamber 3420 (S130). The baking chamber® 3420 performs soft baking on the wafer w The baking process (S132). The first robot 3432 takes out the wafer w from the baking chamber 3420, and transports the wafer W to the first cooling chamber 3540 of the edge exposure module 3500 (S134). The cooling chamber 3540 performs a cooling process on the wafer W (S136). The cooling process is selectively performed in the baking chamber 342, and the wafer W can be directly transferred from the baking chamber 3420 to the first buffer zone 3520. The wafer w which has been processed in the first cooling chamber 3540 is transferred to the first edge exposure chamber 3570 by the edge exposure robot 3560 (S138). 22/66 201028800 The wafer w that has been processed in the first cooling chamber 3540 can be transported to the first buffer 3520 by the edge exposure robot 3560 and temporarily stored in the first buffer 3520, after which The wafer W can be transported to the first edge exposure chamber 357 by the edge exposure 3560. The first edge exposure chamber 3570 performs a process for exposing the edge of the wafer w (si4〇). The wafer w that has been processed in the first edge exposure chamber 3570 is transported to the first buffer 3520 by the edge exposure robot 3560 (S142). The first robot 3432 transports the wafer w from the first buffer 352 Φ Φ to the baking chamber 34% (S144). The baking chamber 342 performs a process for heating the wafer W (S146). The first robot 3432 transports the wafer w from the baking chamber 3420 to the first cooling chamber 3340 of the buffer module 33 (S148). The first cooling chamber 3340 performs a process for cooling the wafer W (S150). The indexing robot 322 transfers the wafer w from the first cooling chamber 3340 to the container 2000 (S152;). When the wafer w is selected to be processed in the second module 3402, the first robot 3482 extracts the wafer w from the second buffer 3330, and transports the spring "W" to the second The baking chamber 3470 of the module 3402 (S160). The drying chamber 3470 sequentially performs a pre-bake process and a cooling process (S162). The second robot 3482 extracts the wafer w from the baking chamber 3470, and the The crystal is transported to the photoresist coating chamber 3460 (S164). In the photoresist coating, 3460, a photoresist is coated on the wafer (8166). Next, 忒 first The robot 3482 transports the wafer w from the photoresist coating chamber 3460 to the crucible baking chamber 3470 (S168). The baking chamber 3470 performs a crucible baking process for the wafer W (S170). The second robot 3482 extracts the wafer w from the baking chamber 347 and transports the wafer w to the second cooling chamber 23/66 201028800 3550 of the edge exposure module 35 (S172). The second cooling chamber is still performing a process for cooling the wafer wn. The cooling process can be performed in the baking chamber 3, and the wafer W is connected to the second buffer 3530 of the shipping line 3470. The wafer w processed in the second cooling chamber 358 is transported to the second edge exposure chamber by the edge exposure robot 356. The wafer W processed in the first cooling to 355G can be The edge exposure robot 3560 is transported to the second buffer zone 353〇 and temporarily stored in the second buffer zone 3530, and then the wafer w can be transported to the second edge exposure chamber 3580 by the edge exposure robot 3560. (S176) The second edge exposure chamber 3580 performs a process for exposing the wafer edge (S178). The wafer w has been processed in the second edge exposure chamber 358, by the edge of the edge The exposure robot 3560 is transported to the second buffer 353 (S180). The first robot 3482 transports the wafer W from the second buffer 3530 to the baking chamber 3470 (S182). The baking chamber 3470 A process is performed for heating the wafer W (S184). The second robot 3482 transports the wafer W from the baking chamber 3470 to the second cooling chamber 3350 of the buffer module 3300 (S186). The second cooling chamber 3350 performs a process for cooling the wafer W (S188). The indexing robot 3220 The wafer W is transported from the second cooling chamber 3350 to the container 2000 (S190). Various modified examples of the coating unit 3000 described above will be described below. The processing module 3400 may include only one module instead of being disposed on The first and second modules 3401 and 3402 of the different layers are further provided. In the indexing module 3200, a plurality of first cooling chambers 3340 and a plurality of second cooling chambers 3350 may be stacked on each other. In addition, in the edge exposure module 3500, a plurality of first cooling chambers 3540 and a plurality of 24/66 201028800 edge exposure chambers 3570 can be provided. In the edge exposure module 3500, a plurality of second cooling chambers 3550 and a plurality of second edge exposure chambers 358A may also be provided. Further, in the buffer module 3300, the first and second cooling chambers 3340 and 3350 may not be provided. In this case, the wafer W can be directly transferred from the first module 3401 to the first buffer 3320 by the first robot 3432, and the indexing robot 3220 can be stored in the first buffer 3320. The wafer W is transported to the container 2000. In addition, the wafer W can be directly transferred from the second module 3402 to the second buffer 3330 ′ by the second robot 3482 and the indexing robot 3220 can store in the second buffer 3330. The wafer W is transported to the container 2〇〇〇. In addition, in the buffer module 3300, the positions of the first buffer area 332 and the first cooling chamber 3340 can be exchanged. In the buffer module 33A: the positions of the second buffer 3330 and the second cooling chamber 3350 can also be exchanged. In addition, the buffer module 3300 can have the same height as the processing module 34. In this case, the indexing robot 3220 can transport the wafer W directly to the first buffer zone 3320. Further, in the edge exposure module 3500, the first cooling chamber 3540 and the second cooling chamber 3550 may not be provided. In this case, the wafer W that has been processed in the first module 3401 is directly transported to the first buffer 3520 by the first robot 3432. In addition, the wafer W that has been processed in the second module 3402 is directly transported to the second buffer region 3530 by the second robot 3482. In addition, in the edge exposure module 3500, the positions of the first cooling chamber 3540 and the first buffer 3520 can be exchanged, and the positions of the second cooling chamber 3550 and the second buffer 3530 can be exchanged. The edge exposure module 3500 can include an upper robot (not shown in 25/66 201028800) for transferring the wafer between the first edge exposure chamber 3570, the first buffer 3520, and the first cooling chamber 3540. W; and a robot (not shown) that is used to transfer the wafer W between the second edge exposure chamber 3580, the second buffer 3530, and the second cooling chamber 3550, instead of including the edge exposure robot 3560. Moreover, in addition to the processes described above, the processing module 3400 can perform other processes. (Pre-exposure processing unit) FIGS. 6 to 8 are schematic views of the pre-exposure processing unit 4A. That is, the sixth figure is a view of the pre- and post-exposure processing unit 4000 from the top inspection view, and the seventh figure is a view of the pre-exposure processing unit 4 of the sixth figure when viewed in a direction "C", and The eighth figure is a view when the pre-exposure processing unit 4000 of the sixth figure is viewed in the direction "D". Referring to the sixth to eighth embodiments, the pre- and post-exposure processing unit 4 includes a load port 4100, an indexing module 4200, a buffer module 43A, a processing module 4400, and an interface module 4500. . The pre- and post-exposure processing unit 4 is connected in line with the exposure unit 9000. The exposure unit 9 is coupled to the interface module 45A along a line extending in the first direction 12. For example, 5, the smear exposure unit 9000 performs a process using a liquid exposure lithography technique. Further, the exposure unit 9 uses a far-infrared radiation source such as a KrF-activated molecular laser or an ArF-activated molecular laser to perform the exposure process. The load port 4100 includes a loading station 4120 on which a container 2000 for storing the wafer w is disposed. A plurality of the loading stations 412A are provided and arranged on a line extending in the second direction 14. In the sixth figure, four stacks 412 are provided. 26/66 201028800 The indexing module 420 transfers the wafer W between the load port 4100 and the container 2000 on the loading station 4120. The indexing module 42A includes a frame 4210, an indexing robot 4220, and a guide rail 423. The frame 4210 is generally formed into an empty rectangular parallelepiped shape. The frame 4210 is disposed on the loading port 4100 and the buffer die. Between the groups 4300. The height of the frame 4210 of the indexing module 42 can be lower than the frame 43 i of the buffer module 430 (described below). The indexing robot 4220 and the rail 4230 is disposed in the frame 4210. The indexing robot 422 has a 4-axis driving structure 'so that a hand 4221 directly processing the wafer W can be in the first, second and second directions 12, 14, 16 Moving, and rotating in a horizontal plane. In addition to the hand 4221, the indexing robot 422A further includes an arm 4222, a carrier 4223 and a base 4224. The hand 4221 is fixedly mounted on the s The upper arm 4222 is provided to be expandable, contractible, and rotatable. The support 4223 is configured to extend in a longitudinal direction thereof in a third direction 16. The arm 4222 is coupled to the support 4223 so that The support 4223 can be linearly moved in the third direction 16. The guide rail 4230 is provided to extend in a second direction 14 in a longitudinal direction thereof. The brace 4223 is fixedly coupled to the base 4224. The base 4224 is coupled to the guide rail 4230 so as to be linearly movable along the §Hail guide 4230 The frame 4210 is equipped with a door opener (not shown) for opening and closing the door of the container. The buffer module 4300 includes a frame 4310, a first buffer 4320, and a second buffer. The area 4330, a cooling chamber 4340, and a buffer robot 4350. The frame 4310 is formed in an empty rectangular parallelepiped shape. The frame 431 is disposed between the indexing module 4200 and the processing module 4400. The first buffer zone 4320, the second buffer 4330, the cooling chamber 4340, and the buffer robot 4350 are disposed in the frame 4310. The second buffer 27/66 201028800 4330, the cooling chamber 4340, and the first buffer 4320 are along the first The three buffers 16 are arranged in an upward order. The first buffer 4320 is positioned at the same height as the first module 4401 (described below) of the processing module 44. The second buffer 4330 and The cooling chamber 4340 is positioned in and The second module 4402 (which will be described below) of the processing & group 4450 is the same. The buffer robot 4350 is positioned in the second direction 14 = the second buffer 4330, cooling The chamber 4340 and the first buffer 432 are spaced apart by a predetermined distance. w The first and second buffers 4320, 4330 temporarily store a plurality of the wafers W. The second buffer 4330 includes a housing 4331 and a plurality of 支撑 supports 4332. The supports 4332 are disposed in the outer casing 4331 and are spaced apart from each other in the second direction 16 of the sin. A wafer is disposed on each of the supports 4332. The housing 4331 is provided with an opening (not shown) corresponding to the indexing robot 4220 and the buffer robot 4350, so that the indexing robot 4220 and the buffer robot 4360 can transport the wafer to the support 4332 or from the support 4332. Take out the wafer. The first buffer area 4320 has a structure similar to the second buffer area 4330. However, the outer casing 4321 of the first buffer 4320 is provided with an opening corresponding to the buffer machine 4350 and the first robot 4432 (described below) of the first module 4401. The number of the branches 4322 of the first buffer 4320 may be the same as or different from the number of the supports 4332 of the second buffer 433. The buffer robot 4350 transfers the wafer w between the first and second buffers 4320, 4330. The buffer robot 4350 includes a hand 4361, an arm 4362, and a support 4363. The hand 4361 is fixedly mounted to the arm 4362. The arm 4362 is assembled to expand and contract so that the hand 4361 can move in the horizontal direction. The arm 4362 is coupled to the struts 4363 so as to be linearly movable along the support 4363 in the third direction 16. The support 4363 has a length that extends from a position corresponding to the second buffer 4330 to a position corresponding to the first buffer 432. The support 4363 can extend further to a position corresponding to the second buffer 4330 or to a position corresponding to the first buffer 4320. The buffer robot 4350 can be assembled to have a 2-axis drive structure such that the hand 3361 moves only in the second and third directions 14, 16. The cooling chamber 4340 cools the wafer W. The cooling chamber 4340 includes a housing 4341 and a cooling plate 4342. The cooling plate 4342 has a top surface on which the wafer w is disposed; and a cooling element 4343 for cooling the wafer W. As the cooling element 4343, various elements such as cooling water, a thermoelectric module, or the like can be used. Additionally, the cooling chamber 4340 can be provided with a lift pin assembly (not shown) for positioning the wafer W over the cooling plate 4342. The housing 4341 is provided (not shown) corresponding to the opening of the indexing robot 4220 and the buffer robot 4350 for the indexing robot 4220 and the second robot 4482 of the second module 4402 (this will be explained below) The wafer W can be transported onto or taken out of the cooling plate 4342. Additionally, the cooling chamber 4340 can be equipped with a door (not shown) for opening and closing the opening. The processing module 4400 includes a first module 4401 and a second module 4402. The first module 4401 performs a germanium process for processing the wafer W prior to the exposure process, and the second module 4402 performs a process for processing the wafer W after the exposure process. The first and second modules 4401, 4402 are disposed in different layers. For example, the first module 4401 is positioned above the second module 4402. The first module/module 4401 comprises a protective layer coating 29/66 201028800, a chamber 4410, a baking chamber 442, and a return chamber 443. The protective layer coating chamber 4410, the baking chamber 442, and the return chamber 443 are disposed in this second direction 14 in this order. Therefore, the protective layer coating chamber 4410 and the baking chamber 4420 are spaced apart from each other with the return chamber 443 interposed therebetween. A plurality of the protective layer coating chambers 4410 are provided and disposed in different layers in the third direction 16. Alternatively, a plurality of the protective layer coating chambers 4410 may be provided in the first and third directions 12, 16. In the third direction 16, a plurality of said baking chambers 4420 are provided in different layers. Alternatively, the bake chamber 4420 can be disposed in the first and third directions 12, 16. The return chamber 4430 is disposed side by side with the first buffer 4320 of the buffer module 43A in the first direction 12. The first robot 4432 is positioned within the reflow chamber 4430. The reflow chamber 4430 is formed generally as a square or a rectangle. The first robot 4432 is in the baking chamber 442, the protective layer coating chamber 4410, the first buffer 4320 of the buffer module 4300, and the first buffer 4520 of the interface module 4500 (hereinafter, This illustrates the transfer of the wafer W. The first robot 4432 includes a hand illusion, an arm ^434, and a support 4 guilty 5. The hand 4433 is fixedly mounted on the arm 4434. The arm 4434 is configured to expand, contract, and rotate. The arm 4434 is coupled to the support 4435 so as to be linearly movable along the object 4435 in the third direction 16. σ 〇Λ The protective layer coating chamber 4410 applies a protective layer on the wafer W to protect the photoresist layer during the liquid ♦ exposure lithography process. The layer coating chamber 4410 includes a housing 4411, a support plate 4412, and two nozzles 13 . The outer casing 4411 is formed in a cup shape having an open top end. The support plate 4412 is positioned in the outer casing 4411 and supports the wafer 1. The support plate 4412 is rotatably provided. The nozzle 4413 supplies a protective liquid, Λ 30/66 201028800, to form the protective layer on the wafer w on the support plate 4412. The nozzle 4413 is formed in a circular tube shape, and the protective liquid is supplied to the center of the wafer w. Alternatively, the nozzle 4413 can have a length equal to the diameter of the wafer w and can be provided with a slit at one of its outlets. In this case, the support plate 4412 can be provided in a fixed state. The protective liquid contains a foaming material. The sputum sputum can be a material that has low affinity with the photoresist and is non-flammable. For example, the protective solution may comprise a fluorochemical solvent. The process of applying the protective liquid by the protective layer coating chamber 4410 starts at the central region ′ of the wafer w while the wafer W on the support plate 4412 rotates. The baking chamber 4420 is heat-treated to the wafer W on which the protective layer is applied. The baking chamber 4420 has at least one of a cooling plate 4421 and a heating plate 4422. The cooling plate 4421 is provided with a cooling element 4423 such as cooling water or a thermoelectric module. The heater plate 4422 is provided with a heating element 4424, such as a heating wire or a thermoelectric module. Each of the heating plate 4422 and the cooling plate 4421 can be provided in a baking chamber 4420. Alternatively, some of the toasting chambers 4420 may have only the heating plate 4422, and the remaining toasting chambers 4420 may have only the cooling plate 4421. The second module 4402 includes a clean room 4460, a post-exposure bake chamber 4470, and a reflow chamber 4480. The cleaning chamber 4460, the reflow chamber 4480, and the post-exposure bake chamber 4470 are arranged in a straight line extending in the second direction 14. Therefore, the cleaning chamber 4460 and the post-exposure baking chamber 4470 are spaced apart from each other in the first direction 14, and the reflow chamber 4480 is interposed therebetween. In the third direction 16, a plurality of said clean rooms 4460 are provided and disposed in different layers. Alternatively, a plurality of said clean rooms 4460 can be disposed on each of said first and second directions 12, 16. A plurality of said post-exposure bake chambers 4470 are provided and disposed in different layers along a line extending in the third direction .16. Alternatively, a plurality of said post-exposure bake chambers 4470 can be configured with 31/66 201028800 in each of the escaped first and third directions 12, π. The return chamber 4480 is disposed side by side with the second buffer 4330 of the buffer deck 43 in the first direction 12. The reflow chamber 4480 is formed substantially in a square or a rectangle. The second robot 4482 is positioned within the return chamber 4480. The second robot 4482 is assembled into a second buffer 4530 of the post-exposure bake chamber 4470, the clean room 4460, the buffer module 4300, the cooling chamber 4340, and the 3H interface module 4500 (hereinafter will be The wafer W is transferred between the descriptions. The provided second robot 4482 may have the same structure as the first robot 4432 of the first module 4401 in the second block 4402. © The cleaning chamber 4460 cleans the wafer W after the exposure process. The π clean room 4460 includes a housing 4461, a floor slab 4462, and a nozzle 4463. The housing 4461 is formed in a cup shape having an open top end. The 5H support plate 4462 is positioned within the housing 4461 and supports the wafer W. The support plate 4462 is rotatably provided. The nozzle 4463 supplies a cleaning liquid to the wafer W on the support plate 4462. The cleaning liquid can be water, such as deionized water. The cleaning chamber 4460 supplies the cleaning liquid to the central region ' of the wafer W while rotating the wafer W on the support plate 4462. When the wafer ® W is rotated, the nozzle 4463 can be linearly moved or rotated from the central region of the wafer W to the peripheral region. The post-exposure bake chamber 4470 heats the wafer W which has been subjected to deep ultraviolet light treatment in the exposure process. By heating the wafer W, the post-exposure baking process accomplishes a characteristic change by increasing the acid produced by exposing the photoresist. The post-exposure bake chamber 4470 has a heating plate 4472. The heater plate 4472 is provided with a heating element 4474, such as a heating wire or a thermoelectric die stage. The post-exposure chamber 4470 can further include a cooling plate 4471. The cooling plate 32/66 201028800 4471 is equipped with a cooling element 4473, such as cooling water and a thermoelectric module. Alternatively, a baking chamber having only the cooling plate 4471 may be additionally provided. As described above, in the processing module 4400, the first and second modules 4401 and 4402 are completely separated from each other. In addition, the reflow chamber 4430 of the first module 44〇 has the second module 44. The reflow chambers 4480 of 〇2 are of the same size so that they can completely overlap each other when viewed from above. Further, the protective layer coating chamber 4410 has the same size as the cleaning chamber 4460 so that the protective layer coating chamber 441 and the cleaning chamber 446 φ φ completely overlap each other when viewed from above. Further, the baking chamber 4420 has the same size as the post-exposure bake to 4470 so that they completely overlap each other when viewed from above. The interface module 4500 transfers the wafer w between the processing module 4400 and the exposure unit 9000. The interface module 4500 includes a frame 4510, a first buffer 4520, a second buffer 4530, and an interface robot 4540. The interface robot 4540, the first buffer 4520 and the second buffer 4530 are positioned within the frame 4510. The first and second φ buffers 452A and 4530 are spaced apart from each other and stacked on each other. The first buffer region 4520 is disposed above the second buffer region 4530. The first buffer 4520 is disposed at a height corresponding to the first module 4401. The second buffer area 4530 is disposed at a height corresponding to the second module 4402. The first buffer 4520 is configured to be in line with the return chamber 4430 of the first module 4401 in the first direction π from the top view. The second buffer zone 4530 is configured to be in line with the return chamber 4430 of the second module 4402 in the first direction 12. The interface robot 4540 is spaced apart from the first and second buffers 4520, 4530 in the second direction 14. The interface machine 4540 transfers the wafer w between the first buffer 4520, the second buffer 4530, and the exposure 33/66 201028800 unit 9000. The interface robot 454 has a structure similar to the buffer robot 4530. The first buffer 4520 temporarily stores the wafer W that has been processed in the first module 44〇1 before the wafer W is transferred to the exposure unit 9000. The second buffer 4530 temporarily stores the wafer W that has been processed in the exposure unit 9A before the wafer w is transferred to the second module 4402. The first buffer 4520 has a housing 4521 and a plurality of supports 4522. The supports 4522 are disposed within the outer casing 4521 and are spaced apart from each other in the third direction 16. A wafer is placed on each of the supports 4522. The outer casing 4521 is provided with openings respectively corresponding to the s-surface robot 4540 and the first robot 4432, so that the interface robot 4540 and the _ robot 4432 can transport the wafer w to the support in the outer casing 4521. 4522, and removing the wafer W from the support 4522. The second buffer 453 has a structure similar to the first buffer 4520. However, the second buffer 4530 outer casing 4531 is provided with openings (not _) corresponding to the interface robot side and the person. Material - Slow _ Thorough = Touch the same or different. The branch of the first reading zone side, 4 = test = according to the specific embodiment, the process of performing the single shed after the exposure. The ninth drawing illustrates a silk pattern of a process side of the processing unit before and after exposure to the exposure according to the specific embodiment. In the case of red, the case will be rounded, where 'chemically amplified light_coated 】 = = _. Execution process and liquid use using a deep ultraviolet light source = 34/66 201028800 The wafer stomach that has been processed in the coating unit 3000 is loaded in the container 2000. The container 2000 is placed on the loading table 4120 of the pre-exposure processing unit 400 (S212). The door is opened by a door opener (not shown). The sigma indexing robot 4220 extracts the wafer w from the container 2, and transports the wafer W to the second buffer of the buffer module 4300 (S214). The buffer robot 435 transfers the wafer w stored in the second buffer 433A to the first buffer 432 (S216). The first robot 4432 takes the wafer from the first buffer 4320 and transports the wafer to the protective layer coating chamber 4410 of the processing module 4400 (S218). This protection

The layer coating chamber 4410 applies a protective layer over the wafer w (S22〇). Next, the first robot 4432 transfers the wafer w from the protective layer coating chamber 4410 to the swash chamber 4420 (S222). The bake chamber 4420 performs a heat treatment on the wafer W, such as heating and cooling (§ 224). The first robot 4432 takes out the wafer w from the baking chamber 4420, and transports the wafer w to the first buffer 452 (S226). The interface robot 4540 transports the wafer w from the first buffer 452 to the exposure 10 unit 9000 (S228). The exposure process for the wafer W is performed in the exposure unit 9000 (S230). In the next step, the interface robot 454 transfers the wafer boundary from the exposure unit 9000 to the second buffer 453 (S232). The second robot 4482 picks up the wafer W from the support of the second buffer 453, and transports the wafer w to the cleaning chamber 4460 of the processing module 4400 (S234). The cleaning chamber 4460 supplies cleaning liquid to the surface of the wafer w to perform a cleaning process (S236). When the process of cleaning the wafer w by the cleaning liquid is completed, the second robot 4482 immediately takes out the wafer W from the cleaning chamber 4460, and transports the wafer w to the post-exposure baking chamber 4470 (S238 ). The cleaning liquid attached to the wafer w, by 35/66 201028800, is heated by the wafer W on the hot plate of the post-exposure baking chamber 4470, while 'A Ben, Yang over 丨丨tb dragon>> Afiite 4 wa wa As.., 丨+丄, ϋ. At the same time, the acid generated in the photoresist is increased to complete the characteristic change of the photoresist (S240). The second robot 4482 transports the wafer W from the post-exposure baking chamber 4470 to the cooling chamber 4340 of the buffer module 4300 (S242). Cooling of the wafer w is performed in the cooling chamber 434 (8244). The indexer 4220 takes out the wafer w from the cooling chamber 434 and transports the wafer w to the container 2 (S246). The container 2000 is transported to the developing unit 5, and the developing process is executed in the developing unit 5000. The residue on some of the residual thief wafers W is removed by the development solution and removed from the photoresist during the ashing process. There is no guarantee to remove the room. Therefore, the structure of the pre- and post-exposure processing unit is relatively simple, and the time for performing the process can be shortened. When a chemically amplified photoresist is used, it is not necessary to set the exposure after the exposure process is performed. According to the eye, the embodiment of the present invention provides the I 5 coffee, Μ% ° and thus 'after the wafer W is transferred to the development sheet, in the pre- and post-exposure processing unit 4000 Quickly implementing a specific embodiment according to the sixth figure, in the pre- and post-exposure processing unit 4000; only fighting a person _

According to the specific embodiment of the sixth figure, the left = clean liquid is on the wafer ~ the implementation of the age, the on-the-ice, the upper _; IJ, the clean room 4460 is only a few steps. That is, the clean room 4460

K is executed. For example, drying after the exposure is performed simultaneously with acid growth. Therefore, 201028800 can shorten the processing time as compared with the case where the cleaning and drying of the wafer is performed in the cleaning chamber 4460. Various modified examples of the pre- and post-exposure processing unit 4000 will be described below. In the above embodiment, the first module 4401 is disposed on the second module 4402. However, the second module 44〇2 can be disposed on the first module 4401. In addition, the processing module 4400 may include only one module instead of the first and second modules 4401 and 4402 participating in different layers. In this case, the protective layer coating chamber 4410, the baking chamber 442, the cleaning chamber 446, and the post-exposure baking chamber 4470 may all be provided in the module. Further, in addition to the nozzle for supplying the cleaning liquid, the cleaning chamber 446 may further include a nozzle for supplying the drying gas. In this case, the cleaning liquid attached to the wafer W can be removed before the wafer w is heated in the post-exposure baking chamber 4470. In addition, the cooling plate is not provided in the first module 4402 of the δHai. The cooling of the wafer 可 w can be achieved only in the cooling chamber 434 of the buffer module 43 (8). In this case, a plurality of the cooling chambers 4340 may be disposed in the buffer module 43A and stacked on each other. Additionally, the cooling chamber 4340 may not be provided in the buffer module 4300. In this case, the wafer W cooled in the second module 4402 is directly transferred to the second buffer 433 by the second robot 4482, and the indexing robot 4220 will be stored in the second buffer. The wafer W in the region 4330 is transferred to the container 2000. In addition, the position of the second buffer zone 4330 of the cooling chamber 4340 in the buffer module 4300 can be exchanged. 37/66 201028800 Further, the locations of the first and second modules 4401 and 4402 are interchangeable. In this case, the cooling unit in the buffer module 4300 can be selectively provided at a height corresponding to the second module 4402. In addition, the buffer module 4300 can have the same height as the processing module 4400. In this case, the indexing robot 4220 can directly transfer the wafer to the first buffer 4320. Additionally, a protective layer removal chamber may be provided in the second module 4402 for removing the protective layer after the exposure process. In this case, the protective layer on the wafer W can be removed prior to the etch process. Further, when the exposure unit 9000 performs a process other than the exposure lithography method in the liquid, the protective layer coating unit 3000 may not be provided in the first module 4401. In this case, baking to 4420 is also not provided. In this case, the processing module 44 can include only the second module 4402' without the first module 4401. In addition, when the exposure unit 9 uses a light source other than the deep ultraviolet light source, the post-exposure baking chamber 4470 may not be provided in the second module 44A2. (Drawing unit) The tenth to twelfth drawings are schematic schematic views of the developing unit 5A, that is, the tenth drawing is a view when the developing unit 5000 is viewed from above, and the eleventh drawing is the display The view of the unit 5000 is viewed from a direction "E", and the twelfth view is a view when the image forming unit 5000 is viewed from a direction "F". Referring to the tenth to twelfth drawings, the developing unit 5A includes a loading port 5100, an indexing module 5200, a buffer module 5300, and a processing module 5400. The loading port 51〇〇, the indexing module 52〇〇, the buffer module 38/66 201028800 5300, and the processing module 54 are disposed in the first direction η in this order. The load port 5100 has a loading table 512A on which a container 2000 for accommodating the crystal W is disposed. A plurality of the loading stations 512A are provided and disposed on a line extending in the second direction 14. In the tenth figure, four loading stations 5120 are provided. The indexing module 5200 transfers the wafer w between the container 2〇〇〇 on the loading platform and the buffer module 5300. The indexing module 52A includes a frame 5210, an indexing robot 5220, and a guide rail 5230. The frame 5210 φ is formed in an empty rectangular parallelepiped shape and disposed between the load port 5100 and the buffering die set 5300. The frame 5210 can be provided as one of the frames 5310 below the buffer module 53 (described below). The indexing robot 522 and the guide rail 5230 are disposed in the frame 5210. The indexing robot 5220 has a 4-axis drive structure so that a hand 5221 that directly processes the wafer w can be rotated and moved in the first, second, and third directions 12, 14, 16 of the hai. In addition to the hand 5221, the indexing robot 5220 further includes an arm 5222, a support 5223, and a base 5224. The arm 5222 is provided to expand φ and is collapsible so that the hand 5222 can be moved in the horizontal direction. The support 5223 is disposed to facilitate its lengthwise extension in the third direction μ. The arm 5222 is coupled to the support 5223' for movement along the support 5223. The guide rail 5230 is provided to facilitate its lengthwise extension in the second direction 14. The support 5223 is fixedly coupled to the base 5224. The base 5224 is coupled to the rail 5230 so as to be linearly movable along the rail 5230. Although not shown in the drawings, the frame 5210 is provided with a door opener ' for opening and closing the door of the container 2000. Referring to FIG. 11 , the buffer module 5300 includes a frame 5310 , a first buffer 5320 , a second buffer 5330 , a first cooling chamber 5340 , 39/66 201028800 , a second cooling chamber 5350 , and a buffer . Zone robot 5360. The frame 5310 is formed into an empty rectangular parallelepiped shape. The frame 531 is disposed between the indexing module 52A and the processing module 5400. The first buffer zone 532, the second buffer zone 5330, the first cooling chamber 534, the second cooling chamber 535, and the buffer robot 5360 are disposed in the frame 5310. The second cooling chamber 5350, the second buffer zone 5330, the first cooling chamber 5340, and the first buffer zone 5320 are arranged in the third direction 16 in the upward direction. The first cooling chamber 5340 and the first buffer 5320 are positioned at the same height as the first module 5401 (described below) of the processing module 5400. The second cooling chamber 5350 and the second buffer 5330 are positioned at the same height as the second module 5402 of the processing module 5400 (which will be described below). The buffer robot 5360 is positioned to be spaced apart from the second buffer 5330, the second cooling chamber 5350, the first buffer 5320, and the first cooling chamber 5340 by a predetermined distance in the second direction 14. Each of the first and second buffers 5320, 5330 temporarily stores a plurality of the wafers W. The second buffer 5330 includes a housing 5331 and a plurality of supports 5332. The supports 5332 are disposed in the outer casing 5331' and are spaced apart from each other in the third direction 16. A wafer w is disposed on each of the supports 5332. The housing 5331 is equipped with openings (not shown) corresponding to the indexing robot 5220, the buffer robot 5360, and the second robot 5482 so that the indexing robot 522, the buffer robot 5360, and the second module 54 2 One of the second robots 5482 (described below) can transport the wafer to the stand 5332 or take the wafer from the support 5332. The first buffer 532 has a structure similar to the second buffer 5330. However, the outer casing 5321 of the first buffer 5320 is provided with an opening corresponding to the buffer robot 536 and one of the first robots 5432 on the first 201028800 module 5401 (which will be described later). The number of the supports 5322 of the first buffer 5320 may be the same as or different from the number of the supports 5332 of the second buffer 5330. For example, the number of second buffers 5330 of the support 5332 can be greater than the number of the supports 5322 of the first buffer 5320. The buffer robot 5360 transfers the wafer w between the first and second buffers 5320 and 5330. The buffer robot 536 includes a hand 5361, an arm 5362, and a support 5363. The hand 5361 is fixedly mounted on the arm 5362. The arm 5362 is configured to expand and contract so that the hand 5361 can move in the second direction 14. The arm 5362 is coupled to the baffle 5363' so as to be linearly movable along the support 5363 in the third direction 16. The support 5363 has a length extending from a position corresponding to the second buffer 5330 to a position corresponding to the first buffer 5320. The branch 5363 can further extend to correspond to the second The location of the buffer 5330 or above the location of the first buffer 5320. The buffer robot 5360 can be assembled to have a 2-axis drive structure to move the hand 5361 only in the second and third directions 14, 16. The first and second cooling chambers 534A, 5350 cool the wafer W. The first cooling chamber 5340 has the same structure as the second cooling chamber 5350. The second cooling chamber 5350 has a housing 5351 and a cooling plate 5352. The cooling plate 5352 has a top surface on which the wafer is disposed, and a cooling unit 5353 for cooling the wafer W. The cooling element 5353 can be formed from various components such as cooling water, a thermoelectric module, and the like. Additionally, the second cooling chamber 5350 can be provided with a lift pin assembly (not shown) for positioning the wafer W over the cooling plate 5352. The housing 5351 is equipped with a 41/66 201028800 opening (not shown) corresponding to the indexing robot 5220 and the second robot 5482, so that the indexing robot 5220 and the second module 5402 are one of the second robots 5482 (hereinafter This will be described. The wafer W can be transported onto the cooling plate 5352 or taken out from the cooling plate 5352. Additionally, the second cooling chamber 5350 can have a door (not shown) for opening and closing the opening. The processing module 5400 performs a required process before the wafer W is transferred to the pre- and post-exposure processing unit 4A. The processing module is formed substantially in the shape of a rectangular parallelepiped. The processing module 54 includes a first module 54〇1 and a second module 5402. The first and second modules 54〇1, 54〇2 are arranged in different layers. The first and second modules 54〇1, 54〇2 may be provided to perform the same process. For example, the first module 54〇1 is positioned above the second module group 5402. The first module 3401 includes a developing chamber 541〇, a baking chamber 542〇, and two return chambers 5430. The developing chamber 541, the baking chamber 542, and the back, the chamber 5430 are disposed in the second direction 14 in this order. Therefore, the development image = 541G and the baking chamber 542 are spaced apart from each other in the second direction 14, and the reflow chamber 5430 is interposed therebetween. A plurality of the imaging chambers 541 are disposed on each of the first and third directions 12, 16. In the drawings, the six-image chamber 5 is exemplarily provided to repair a plurality of nacelles 542 2 in each of the first and third directions 12, 16. In the figure: a six (four) roasting chamber is provided illustratively. However, six or more baking chambers 5420 can be provided. The return chamber 543 is positioned side by side with the first buffer direction 12 of the buffer module 5. The opening 5432 and the rail 5433 are provided in the return chamber 543G. The return chamber 543G is substantially tanned to a rectangular shape. The first robot 5432 transports the wafer w between the baking chamber 532, the display 42/66 201028800 image to 5400, the first buffer 5320, and the first cooling chamber 5340. The guide rail 5433 has a length direction extending in the first direction 12. The guide rail guides the linear motion of the first robot 5432 at the first side from 12. The robot 5432 has a hand 5434, a boil 5453, a support 5436, and a base 5437. The hand 5434 is fixedly mounted to the arm 5435. The arm 5435 is assembled to expand and contract so that the hand 5434 can move in a horizontal direction. The support 5436 is configured to facilitate its lengthwise extension in the third direction 16. The arm 5435 is coupled to the support 5436 so as to be linearly movable along the support 5436 in the third direction 16. The field 5436 is fixedly coupled to the base 5437' and the base 5437 is coupled to the rail 5433 so as to be movable along the guide rail 5433. All of the developing chambers 5410 have the same structure. However, the types of developing solutions used in the developing chamber 5410 may be different from each other. The developing chamber (4) removes the exposed portion of the photoresist. Here, the exposed portion of one of the protective layers is also removed together. Depending on the type of developing solution used, it is optional to selectively remove the unexposed portions of the photoresist and the unexposed portions of the protective layer. The developing chamber 5410 includes a housing 5411, a support plate 5412, and a nozzle 5413. The outer casing 54 is formed in a cup shape having an "open top". The slab 5412 is positioned in the outer casing 3411 to support the wafer. The support plate 3412 is assembled to be rotatable. The nozzle 5413 supplies the solution to the wafer cassette on the support plate 5412. The nozzle "port is formed in a circular tube shape to supply a developing solution to the wafer and has a narrow-shaped outlet. Further, the developing chamber 541〇 may further comprise: a nozzle for supplying a source such as deionized A cleaning liquid for water to clean the surface of the wafer w on which the photoresist is applied 43/66 201028800.

The baking chamber 5420 heats the wafer W. For example, the baking chamber 3420 performs a post-baking process for heating the wafer W before the developing process, and performing a hard baking process for heating the wafer W after the developing process. And performing a cooling process performed after the respective baking processes. The baking chamber 5420 includes a cooling plate 5421 or a heating plate 5422. The cooling plate 5421 is provided with a cooling element 5423 such as a cooling water or thermoelectric module. The heating plate 5422 is provided with a heating element 5424' such as a heating wire or a thermoelectric module. The heating plate 5422 and the cooling plate 5421 can be provided in respective baking chambers 542A. Alternatively, some of the baking chambers 5420 may have only the heating plate 5422, and the rest may have only the cooling plate 5421. The first module 5402 of the hai includes a developing room 5460, a baking chamber 5470 and a reflow chamber 5480. The developing chamber 5460, the baking chamber 5470, and the return chamber 5480 have the same configuration and arrangement as the developing chamber 5410, the baking chamber 5420, and the return chamber 543 of the first module 5401. In addition, the reflow chamber 5480 has a first robot 5482 having the first module 3401

The first robot 3432 has the same structure. The second robot 5482 is configured to transfer the wafer w between the developing chamber 5460, the baking chamber 5470, the second buffer 533, and the second cooling chamber 5350. In the above processing module 3400, the first and second modules 34A1, 3402 are separated from each other. Moreover, the first module 34(1) has the same structure and configuration as the second module when viewed from above. Eight

A process executed by the developing unit 5000 of the tenth drawing will be described below with reference to Figs. 13A and 13B. The thirteenth and thirteenthth drawings illustrate a flow chart of a process performed on the wafer W by the developing unit 5 according to an embodiment. 44/66 201028800 A container 2000 for accommodating the wafer W is provided on the loading table 5120 of the load port 5100 (S312). The door of the container 2000 is opened by the door opener. The indexing robot 5220 takes out the wafer w from the container 2000, and transports the wafer w to the second buffer area 5330 (S314). The wafer W is transmitted to one of the first and second modules 54〇1, 54〇2. See _. When the wafer w is selected to be processed in the first module 5401, the buffer robot 5360 transports the wafer w stored in the second buffer 533〇 to the first buffer 532 (S32〇) ). The first robot 5432 takes out the wafer W from the first, punched area 5320, and transports the wafer w to the = to 5420 (S322). The baking chamber 5420 sequentially performs a post-drying process and a cold process (S324). The first robot 5432 extracts 曰曰 = w' from the baking chamber 542 and transports the wafer w to the developing chamber 341 (S326). The development to 5410 applies the developing solution onto the wafer W (S328). Next: The first robot 5432 transports the wafer W from the developing chamber to the grilling chamber 542G (S33G). The baking chamber rubs the wafer (4) with the hard baking process (S332). Now: t, the robot 5432 takes the wafer from the supply chamber 5420 and the first cooling chamber 534G (s334). The first cooling chamber w is Yuqing 6). The indexing machine sends to the wafer processing machine _w, the first crystal, w, and the grilling chamber 5470 sequentially controls the grilling chamber 5470_). Two robots from the process _. The first wafer is taken out of the wafer W and the wafer 45/66 201028800 W is transported to the developing chamber 5460 (S364). In the developing chamber 5460, the developing solution is applied onto the wafer W (S366). Next, the second robot 5482 transports the wafer W from the developing chamber 5460 to the baking chamber 5470 (S368). The baking chamber 5470 performs a hard baking process on the wafer W (S370). The second robot 5482 extracts the wafer W from the baking chamber 5470 and transports the wafer W to the second cooling chamber 5350 (S372). The second cooling chamber 5350 performs a cooling process on the wafer W (S374). The indexing robot 5220 transports the wafer W from the second cooling chamber 5350 to the container 2000 ^

(S376). V Various modified examples of the developing unit 5000 will be described below. The processing module 5400 can include only one module ' instead of the first and second modules 5401, 5402 disposed in different layers. In addition, a plurality of first cooling chambers 5340 and a plurality of second cooling chambers 5350 are stacked on each other in the indexing module 5200. Additionally, the first and second cooling chambers 5340, 5350 may not be provided in the buffer module 5300. In this case, the wafer W can be directly transferred from the first module 5401 to the first buffer 5320' by the first robot 5432 and the indexing robot 5220 can be stored in the first buffer 5320. The wafer W is transported to the container 2000. In addition, the wafer can be directly transferred from the second module 54 〇 2 to the second buffer 5330 by the second robot 5482, and the indexing robot 5220 can be stored in the second buffer 5330. The wafer w is transported to the container 2〇〇〇. Further, the position of the first buffer 532 and the first cooling chamber 5340 can be exchanged in the buffer module 5300. In the buffer module 53A, the position of the second buffer 5330 and the second cooling chamber 5350 can also be changed. 46/66 201028800 In addition, the buffer module 5300 can have the same height as the processing module 54. In this case, the indexing robot 522 can directly transport the wafer W to the first buffer 5320. In addition, other processes other than the above-described processes may be performed in the processing module 5400. According to a specific embodiment of the first figure, the substrate processing apparatus is designed to facilitate separately providing a process for performing the coating process, a unit for performing the development process, and being connected in line with the exposure unit 9_ to perform The unit of the pre-exposure/post-exposure processing process. Therefore, unlike the substrate processing system for the simultaneous execution of the cloth and development process and the calendering unit, the 9_=:= device's first embodiment, and the developing unit 3_, 5〇 〇〇 can continuously execute its process (even when it takes a long time to execute the process and thus the order of the pattern formed on the _ View of the process. First of all, in a deposition unit (not shown) - film 102 (see the tenth ... solid, medium on the a wafer W on the immersion unit 3000 W ten map) ° the crystal is transferred to the coating In the enamel coating unit 3, a photoresist 104 (see the tenth „W upper coating B diagram) is in the coating unit 3000, two or two: baking process, edge exposure process, and the like. After the exposure is exposed, the processing unit applies the protection module 4401 on the wafer W, and 44 〇 1 ^ ^ T progresses to perform other processes, such as baking, and is transported to the squaring unit _. 47/66 201028800 The exposure sheet first 9000 light is irradiated to one of the protective layer 1〇6 and the photoresist ι〇4 The field 108' is used to change the characteristics of the selected area 1 to 8 (see FIG. 14D). The second module (10) of the pre- and post-exposure processing unit 4 performs a cleaning process, a post-exposure bake process, and the like. In the post-exposure baking process, the cleaning liquid remaining on the wafer w is removed. Next, the wafer W is transferred to the developing unit 5〇0〇. In the developing unit 5〇〇〇 The protective layer 106 whose characteristics are changed and the selected region 108 of the photoresist 1〇4 are removed (see FIG. 14e). As described above, in addition to the developing process, the image is displayed. Unit 5000 further performs other processes, such as a bake process, etc. Next, the wafer is transferred to an etch unit (not shown). In the etch cell, the exposed area of the film is removed 1 〇 3 (see 14th F). Next, the wafer boundary is transferred to the ashing unit (not shown). In the ashing unit, the photoresist remaining on the film is removed and the protective layer 1 is removed. 〇6 (See the fourteenth illusion. When the deposition unit ^, the coating unit 30 〇〇, the Other processes, such as a process for cleaning the wafer w, and the like, may be further performed when the wafer is transferred between the pre- and post-exposure processing unit 4 (9), the developing unit 5_, the stencil unit, and the ashing unit, and the like. According to the specific embodiment, the photolithography process can be efficiently performed. Further, the yield of the coating unit and the developing unit can be increased. Further, when a chemically amplified photoresist is used, it can be quickly executed. The post-bake baking process. Further, since the cleaning liquid remaining on the substrate can be removed by increasing the acid in the post-exposure baking unit, it is not necessary to use a separate drying nozzle in the cleaning chamber, thereby shortening In addition, since the protective layer is removed in the developing process and the ashing process, 201028800 = no ^ before and after the exposure processing unit t is used - separate protection is available, so the processing time can be shortened. The disclosure of the subject matter of the present invention is to be considered as illustrative and not restrictive, and the scope of the appended claims is intended to cover all such modifications and alternative embodiments. The scope of the present invention is to be determined by the scope of the invention, and the The accompanying drawings are provided to provide a thorough understanding of the invention, and the invention is in the form of the description of the present invention. The principle of the invention is explained. In the drawings: the first drawing is a schematic diagram of a substrate processing system according to the present invention; the second to fourth figures are schematic schematic circles of a coating unit according to the present invention; Figure 5b is a flow chart showing the continuous process performed in the coating of the second figure; the sixth to eighth figures are schematic views of the post-exposure baking according to the present invention; the ninth figure is illustrated in the sixth figure. A flow chart of a continuous process performed in the coating unit; the tenth to twelfth drawings are schematic schematic views of the developing unit according to the present invention; '~13A to thirteenth Flow chart of the continuous process in the image of the tenth image; 49/66 201028800 The fourteenth Ath to the fourteenth Gth diagrams illustrate a schematic process of forming a pattern on a wafer. [Main component symbol description] 1 Substrate processing system 12 First direction 14 Second direction 16 Third direction 102 Film 103 Exposure area 104 Photoresist 106 Protective layer 108 Selected area 1000 Automatic transfer unit 2000 Container 3000 Coating unit 3100 Load port 3120 loading platform 3200 indexing module 3210 frame 3220 indexing robot 3221 hand 3222 arm 3223 support 3224 base 3230 rail 3300 buffer module 50/66 201028800 3310 frame 3320 first buffer 3321 housing 3322 support 3330 second slow Punch 3331 Shell 3332 Support 3340 First Cooling Chamber 3350 Second Cooling Chamber 3351 Housing 3352 Cooling Plate 3353 Cooling Element 3360 Buffer Robot 3361 Hand 3362 Arm 3363 Support 3400 Processing Module 3401 First Module 3402 Second Module 3410 photoresist coating chamber 3411 housing 3412 support plate 3413 nozzle 3414 nozzle 3420 baking chamber 3421 cooling plate 51/66 201028800 3422 heating plate 3423 cooling element 3424 heating element 3430 reflow chamber 3432 first robot 3433 rail 3434 hand 3435 arm 3436 Support 3437 base 3453 arm 3460 photoresist coating chamber 3470 baking chamber 3480 reflow chamber 3482 second robot 3500 edge exposure module 3510 frame 3520 first buffer 3530 second buffer 3540 first cooling chamber 3550 second cooling chamber 3560 edge exposure robot 3570 First edge exposure chamber 3580 Second edge exposure chamber 4000 Pre- and post-exposure processing unit 4100 Load port 52/66 201028800 Load station indexing module frame indexing robot arm support base guide buffer module frame first buffer housing Support Second Buffer Shell Support Cooling Chamber Shell Cooling Plate Cooling Element Buffer Robot Arm Support Processing Module 53/66 201028800 4401 First Module 4402 Second Module 4410 Protective Coating Room 4411 Housing 4412 Support Plate 4413 Nozzle 4420 Baking chamber 4421 Cooling plate 4422 Heating plate 4423 Cooling element 4424 Heating element 4430 Reflow chamber 4432 First robot 4443 Hand 4434 Arm 4435 Support 4460 Cleaning chamber 4461 Housing 4462 Support plate 4463 Nozzle 4470 Exposure post-baking chamber 4471 Cooling plate 4472 heating plate 4473 cooling 4474 heating element member 4480 reflow chamber

54/66 201028800 Second Robot Interface Module Frame First Buffer Shell Support Second Buffer Shell Support Interface Robotic Imaging Unit Load Port Loader Indexing Module Frame Indexing Robot Arm Support Base Rail Buffer Module frame first buffer housing support 201028800 5330 second buffer 5331 outer 5332 support 5340 first cooling chamber 5350 second cooling chamber 5351 housing 5352 cooling plate 5353 cooling unit 5360 buffer robot 5361 hand 5362 arm 5363 Support 5400 processing module 5401 first module 5402 second module 5410 developing room 5411 housing 5412 nozzle 5413 nozzle 5414 nozzle 5420 baking chamber 5421 cooling plate 5422 heating plate 5423 cooling element 5424 heating element 5430 reflow chamber 201028800 first Robot Guide Arm Support Base Arm 显 Imaging Room Baking Room Reflow Chamber Exposure Unit Direction "A" Direction "B" Direction "C" Direction "D" Direction "E" Direction "F" Wafer 57/66

Claims (1)

201028800 Seven patent application scope: 1. A substrate processing system is a coating unit, which is reduced by |=. - before and after exposure unit: its:-coating process; the exposure has been connected to the coating unit The unit is used for the pre-exposure/exposure post-processing process; and the soil plate performs an exposure process and performs a rational display on each of the pre- and post-exposure processing units. The image forming unit; the indexing module is configured to: transport the substrate to the container 5; the other device removes the substrate or prepares the substrate for the seed preparation, The module 1 is configured to perform a sequential configuration on the substrate; and, for example, the indexing portion and the processing module are further connected to the exposure unit after being exposed to the surface module The 楹 楹 楹 / ' 面 module is disposed on one side of the processing module, and the Θ 度 degree module is disposed on the other side of the processing module. In the substrate processing system of the first item, the processing module of the first mode and the die and the unit includes the different layers. For example, the second item of the material view s A module includes: an upper protective layer applied to apply a protective layer to the substrate, baked to perform a heat treatment on the substrate; and a second robot for coating the protective layer The substrate is transferred between the chamber and the baking chamber 58/66 201028800. 4. In the substrate processing described in claim 3, the second module further includes a cleaning chamber for cleaning the substrate. 5. In the base of the patent application, the second module comprises: a system, and a subsequent exposure baking chamber, which is used to perform 1 light on the exposed substrate. - The second machine is 11 people, and the rest transfers the substrate between the returned money. The substrate processing system of claim 2, wherein the pre-exposure unit further comprises a thief group, the buffer module is disposed in the indexing module and the processing module The buffer module includes: a first buffer disposed at a height corresponding to the first module and temporarily storing the substrate; and a first buffer disposed on the second corresponding to the second The height of the module and the temporary storage of the substrate. The substrate processing system of claim 6, wherein the first and second buffers are stacked on each other, and each of the first and second buffers includes a plurality of supports Things. 8. The substrate processing system of claim 7, wherein the buffer module of the pre- and post-exposure processing unit further comprises a buffer robot for use in the first and second buffers The substrate is transferred between. 9. The substrate processing system of claim 8, wherein the first and second buffers are arranged side by side in a vertical direction. The substrate processing system of the sixth aspect of the invention, wherein the buffer module is disposed at a height corresponding to the first module, and the thief module further includes a cooling Room, the cooling (four) is to cool the plate. The substrate processing system of claim 2, wherein the interface module comprises: a first buffer region disposed at a height corresponding to the height of the first module and temporarily storing the substrate; a second buffer disposed at a height corresponding to the second module and temporarily storing the substrate; and - the interface robot 'between the photo unit and the second buffer 以及 and in the second buffer The substrate is transferred between the zone and the exposure unit. The substrate processing system according to any one of the preceding claims, wherein the coating unit further comprises an edge exposure module, wherein the edge exposure module is disposed in the processing module One side, and the indexing module is disposed on the other side of the processing module. 13. An exposure before and after processing unit for performing a desired process on a substrate on which a photoresist is applied before and after an exposure process, the pre- and post-exposure processing unit comprising: a loading port thereon Providing a container for accommodating the substrate; an indexing module for taking out the substrate from the container or transporting the substrate to the container; a processing module for performing a process on the substrate; and an interface module 'connected to an exposure unit, wherein the load port, the indexing module, the processing module and the interface module are sequentially disposed in a first direction; and the processing module includes a protective layer coating The protective layer coating chamber is coated with a protective layer on the substrate by 60/66 201028800. A 1 = pre- and post-exposure treatment as described in claim 13 of the patent application. The processing module further includes a cleaning chamber for > cleaning the substrate β. The pre- and post-exposure processing unit of claim i, wherein the processing module further comprises a baking chamber for heat-treating the substrate. #16。 In the pre- and post-exposure processing unit of claim 13, the processing module further comprises an after-exposure baking chamber, and the exposing is performed after baking to perform the exposure on the exposed substrate. Process. ^1 7. The pre- and post-exposure processing unit described in claim 14 of the patent application, wherein the processing module includes a first module and a second module disposed in different layers, and the protective layer coating chamber is disposed. In the first module, the clean room is disposed in the second module. The pre- and post-exposure processing unit of claim 17, wherein the processing module comprises: a baking chamber disposed in the first module and used for heat treating the substrate; a robot is disposed in the first module and configured to transfer a substrate between the protective layer coating chamber and the baking chamber; an exposure post-baking chamber is disposed in the second module, and And performing a post-exposure bake process on the exposed substrate; and a second robot disposed in the second module and configured to transfer the substrate between the clean room and the post-exposure coal bake chamber . The pre- and post-exposure processing unit of claim 17, further comprising a buffer module disposed between the indexing module 61/66 201028800 and the processing module, wherein The buffer module includes: a first buffer disposed at a height corresponding to the first module and temporarily storing the substrate; and a second buffer disposed in the second module The substrate is stored at a high level and temporarily. 20. The pre-exposure processing unit of claim 19, wherein the first and second buffers are mutually stacked, and each of the first and second buffers comprises a plurality of The substrate is disposed on the support. @21. The pre- and post-exposure processing unit of claim 2, wherein the buffer module further comprises a buffer robot for use in the first and second buffers The substrate is transferred between. 2, as in the pre- and post-exposure processing described in claim 21, wherein the first and second buffers are arranged side by side in a vertical direction. 2. The pre- and post-exposure processing unit of claim 19, wherein the buffer module is disposed at a high loudness corresponding to the first module and further includes a cooling chamber for the cooling chamber The substrate is cooled. The pre- and post-exposure processing unit of claim 17, wherein the interface module comprises: a first buffer disposed at a height corresponding to the first module and temporarily storing the substrate; a second buffer disposed at a height corresponding to the second module and temporarily storing the substrate; and an interface robot for between the first buffer and the exposure unit and at the second The substrate is transferred between the buffer zone and the exposure unit. The pre- and post-exposure processing unit of claim 24, wherein the first and second buffers are stacked on each other, and each of the first and second buffers A plurality of supports are disposed, and the substrates are respectively disposed on the supports. • 26—a pre- and post-exposure processing unit for performing a desired process on a substrate on which a photoresist is applied before and after the exposure process, the pre- and post-exposure processing unit comprising: a load port thereon Providing a container for accommodating the substrate; φ an indexing module, which takes a substrate from the container or transports the substrate to the container; a processing module that performs a process on the substrate; a buffer module, which is set Between the indexing module and the processing module; and an interface module connected to an exposure unit, wherein the load port, the indexing module, the buffer module, the processing module, and the The interface module is sequentially disposed in a first direction; and φ the processing module includes a first module and a second module disposed on different layers, wherein the first module includes: a protective layer coating a chamber for applying a protective layer on the substrate; a baking chamber 'which heats the substrate; and ▲ a reflow chamber having a ---robot for the protective layer Coating chamber, baking room The substrate is transferred between the buffer module and the interface module, and the second module comprises: 63/66 201028800 a cleaning room for cleaning the substrate; and an exposure baking chamber for use Performing an exposure post-baking process on the substrate; and a reflow chamber having a second robot for the cleaning chamber, the post-exposure baking chamber, the buffer module, and the interface The wafer is transferred between the modules. The pre- and post-exposure processing unit according to claim 26, wherein the protective layer coating chamber, the reflow chamber equipped with the first robot, and the baking chamber are sequentially disposed in a second In the direction; and the cleaning chamber, the reflow chamber equipped with the second robot, and the exposure© post-baking chamber are sequentially disposed in the second direction. The pre- and post-exposure processing unit of claim 27, wherein the first module is disposed on the second module; the buffer module includes: a first buffer, which is set The first buffer is corresponding to the height of the first module and is used for temporarily storing the substrate; and a cooling chamber is further disposed at - corresponding to the height of the second module and hiding the substrate; the first buffer And the cooling chamber is arranged side by side in a vertical direction; and when viewed from above, the first buffer is configured to be in line with the return chamber of the first module in the first direction. The pre- and post-exposure processing unit of claim 28, wherein the buffer module further comprises: - a second buffer 'set to - corresponding to the height of the second module and temporarily stored a substrate; and a buffer robot for transferring the substrate between the first and second regions, 64/66 201028800, wherein the first buffer and the buffer robot are configured when viewed from above A second direction perpendicular to the first direction. 30. A substrate processing method, comprising: coating a photoresist on a substrate; coating a protective layer on the substrate on which the photoresist is coated; and coating the protective layer thereon The substrate performs a liquid immersion lithography process; the substrate that has been processed in the liquid immersion lithography process; and φ performs a development process on the substrate, wherein the protective layer is Coating and cleaning of the substrate are performed in an exposure before and after processing unit, and the pre- and post-exposure processing unit is connected in a line with an exposure unit for performing the liquid infiltration lithography process; The cloth is performed in a coating unit that is separated from the pre- and post-exposure processing unit; and the execution of the dip process is implemented in a coating unit that is separated from the pre- and post-exposure processing unit. The substrate processing method of claim 3, further comprising performing an exposure post-baking process on the substrate after cleaning the substrate and before performing the developing process on the substrate. [2] The substrate processing method of claim 3, wherein the cleaning of the substrate is performed by supplying a cleaning liquid to the substrate; and the cleaning liquid retained on the 4 substrate is borrowed The substrate is removed by heating the substrate without the need to supply the fluid to dry the substrate. 33. The substrate processing method according to claim 31, wherein the cleaning of the substrate is performed by supplying a cleaning liquid to the substrate 65/66 201028800, and then t(10) county 彳mjie (4), It is removed during the post-exposure baking process of the hard-to-substrate cleaning. The method of removing the substrate is as described in the third paragraph of the patent application. The protective layer is disposed on the outside of one of the pre- and post-exposure processing units, such as the substrate processing party described in claim 30, and the remaining portion of the protective layer is removed in the developing process. 'P 77 is removed in an ashing process. ❿ 66/66