201026166 · 六、發明說明 【發明所屬之技術領域】 本發明是有關對液晶顯示裝置（LCD)等的平板顯示 器用的玻璃基板等的基板實施電漿處理的電感耦合電漿處 理裝置、電漿處理方法及儲存有使電漿處理方法實行於電 感耦合電漿處理裝置的程式之電腦可讀取的記憶媒體。 φ 【先前技術】 在液晶顯示裝置（LCD )等的製造工程中，爲了對玻 璃基板實施特定的處理，而使用電漿蝕刻裝置或電漿CVD 成膜裝置等各種的電漿處理裝置。如此的電漿處理裝置， 以往大多使用電容結合電漿處理裝置，但最近具有可在高 真空度取得高密度的電漿之大的優點的電感耦合電漿（ Inductively Coupled Plasma ICP )處理裝置受到注目。 電感耦合電漿處理裝置是在收容被處理基板的處理容 # 器的電介體窗的外側配置高頻天線，對處理容器內供給處 理氣體的同時對此高頻天線供給高頻電力，藉此使電感耦 合電漿產生於處理容器內，藉由此電感耦合電漿來對被處 理基板實施特定的電漿處理。電感耦合電漿處理裝置的高 頻天線大多使用成平面狀的特定圖案的平面天線。 在如此利用平面天線的電感耦合電漿處理裝置是在處 理容器內的平面天線正下方的空間產生電漿，此時是與天 線正下方的各位置的電場強度成比例，具有高電槳密度區 域與低電漿區域的分布，因此1平面天線的圖案形狀成爲 -5- 201026166 決定電漿密度分布的重要因素。 可是’一台的電感耦合電漿處理裝置所應對應的應用 並非限於一個，必須對應於複數的應用。此情況，爲了在 各個的應用中進行均一的處理，而必須使電漿密度分布變 化，因應於此，以能夠使高密度區域及低密度區域的位置 不同的方式準備複數個相異形狀的天線，按照應用來進行 更換天線。[Technical Field] The present invention relates to an inductively coupled plasma processing apparatus and a plasma treatment for performing plasma treatment on a substrate such as a glass substrate for a flat panel display such as a liquid crystal display (LCD). The method and a computer readable memory medium storing a program for causing a plasma processing method to be implemented in an inductively coupled plasma processing apparatus. φ [Prior Art] In the manufacturing process of a liquid crystal display device (LCD) or the like, various plasma processing apparatuses such as a plasma etching apparatus or a plasma CVD film forming apparatus are used to perform specific processing on the glass substrate. In such a plasma processing apparatus, a capacitor-coupled plasma processing apparatus is often used in the past, but an inductively coupled plasma (ICP) processing apparatus which has a large advantage of obtaining a high-density plasma at a high degree of vacuum has recently attracted attention. . In the inductively coupled plasma processing apparatus, a high frequency antenna is disposed outside a dielectric window of a processing container that accommodates a substrate to be processed, and high frequency power is supplied to the high frequency antenna while supplying a processing gas into the processing chamber. The inductively coupled plasma is generated in the processing vessel by inductively coupling the plasma to perform a specific plasma treatment on the substrate being processed. Most of the high-frequency antennas of the inductively coupled plasma processing apparatus use a planar antenna of a specific pattern in a planar shape. The inductively coupled plasma processing apparatus using the planar antenna thus generates plasma in a space directly under the planar antenna in the processing container, which is proportional to the electric field strength at each position directly below the antenna, and has a high electric paddle density region. With the distribution of the low plasma region, the pattern shape of the 1-plane antenna becomes an important factor in determining the plasma density distribution from -5 to 201026166. However, the application of the one inductively coupled plasma processing apparatus is not limited to one and must correspond to a plurality of applications. In this case, in order to perform uniform processing in each application, it is necessary to change the plasma density distribution. Therefore, a plurality of antennas of different shapes can be prepared in such a manner that the positions of the high-density region and the low-density region can be different. Replace the antenna according to the application.
然而，對應於複數的應用來準備複數的天線，按不同 @ 的應用進行更換是需要非常多的勞力，且最近因爲 LCD 用的玻璃基板顯著大型化，所以天線製造費用也變得高價 〇 並且，即使如此準備複數的天線，在所賦予的應用中 也未必爲最適條件，不得不藉由製程條件的調整來對應。 對於此，在專利文獻1是揭示有將渦旋形天線分割成 內側部分與外側部分的兩個部分，而使能夠流動各獨立的 高頻電流之電漿處理裝置。若根據如此的構成’則可藉由 © 調整往內側部分供給的功率及往外側部分供給的功率來g 制電漿密度分布。 然而，就記載於專利文獻1的技術而言，必須設置 '渦 旋形天線的內側部分用的高頻電源與外側部分用的高頻® 源的兩個高頻電源或設置電力分配電路，裝置會形成大規 模，裝置成本會變高。又，此情況電力損失大’電力成本 高，且難以進行高精度的電漿密度分布控制。 於是，在專利文獻2記載有電感耦合電漿處理裝置’ -6- 201026166 其係於處理室內配置具有：主要在外側部分形成電感電場 的外側天線部、及主要在內側部分形成電感電場的內側天 線部之高頻天線，且在外側天線部與內側天線部的一方連 接可變電容器，藉由調節此可變電容器的電容來控制外側 天線部及內側天線部的電流値，控制形成於處理室內的電 感耦合電漿的電漿電子密度分布。 〔先行技術文獻〕 〇 〔專利文獻〕 〔專利文獻1〕特許第3077009號公報 〔專利文獻2〕特開2007-3 1 1 1 82號公報 【發明內容】 (發明所欲解決的課題） 若根據記載於專利文獻2的電感耦合電漿處理裝置， 則藉由控制外側天線部及內側天線部的電流値，可不用更 ® 換天線來控制形成於處理室內的電感耦合電漿的電漿電子 密度分布。 但，在專利文獻2中，雖可控制電漿電子密度分布， 但功率效率是例如與專利文獻1所記載的電感耦合電漿幾 乎不變。因此，在所欲取得更高密度的電漿時，如以往般 ，必須提高供給至外側天線部與內側天線部的高頻電力的 電力量。 本發明是有鑑於該情事而硏發者，其目的是在於提供 一種功率效率更佳的電感耦合電漿處理裝置、電漿處理方 201026166 法及儲存有使該電漿處理方法實行於電感耦合電漿處理裝 置的程式之電腦可讀取的記憶媒體。 (用以解決課題的手段） 爲了解決上述課題，本發明的第1形態的電感耦合電 漿處理裝置係具備： 處理室，其係收容被處理基板而實施電漿處理； 載置台，其係於前述處理室內載置被處理基板； @ 處理氣體供給系，其係對前述處理室內供給處理氣體 排氣系，其係將前述處理室內排氣； 天線電路，其係隔著電介體構件來配置於前述處理室 的外部，藉由供給高頻電力在前述處理室內形成電感電場 :及 並列電路，其係並聯於前述天線電路， 使前述天線電路的阻抗與前述並列電路的阻抗形成逆 〇 相位，而構成可在前述處理室內生成電感耦合電漿。 又，本發明的第2形態的電漿處理方法，係使用電感 耦合電漿處理裝置的電漿處理方法，該電感耦合電漿處理 裝置係具備： 處理室，其係收容被處理基板而實施電漿處理； 載置台，其係於前述處理室內載置被處理基板； 處理氣體供給系，其係對前述處理室內供給處理氣體 -8- 201026166 排氣系，其係將前述處理室內排氣； 天線電路，其係隔著電介體構件來配置於前述處理室 的外部，藉由供給高頻電力在前述處理室內形成電感電場 :及 並列電路，其係並聯於前述天線電路， 其特徵爲： 使前述天線電路的阻抗與前述並列電路的阻抗形成逆 相位，而在前述處理室內生成電感耦合電漿。 又，本發明的第3形態的記憶媒體，係記憶有動作於 電腦上的控制程式之電腦可讀取的記憶媒體，其特徵爲： 前述控制程式係於實行時使控制電感耦合電漿處理裝 置，而得以進行上述第2形態的電漿處理方法。 〔發明的效果〕 若根據本發明，則可提供一種功率效率更佳的電感耦 ® 合電漿處理裝置、電漿處理方法及儲存有使該電漿處理方 法實行於電感耦合電漿處理裝置的程式之電腦可讀取的記 憶媒體。 【實施方式】 以下，參照圖面來說明有關此發明的實施形態。 (第1實施形態） 圖1是表示本發明的第1實施形態的電感耦合電漿處 -9 - 201026166 理裝置的剖面圖，圖2是表示使用於此電感耦合電漿處理 裝置的高頻天線的平面圖。此裝置是例如使用於在FPD用 玻璃基板上形成薄膜電晶體時的金屬膜、ITO膜、氧化膜 等的蝕刻或阻絕膜的灰化處理。在此，FPD是例如液晶顯 不器（LCD)、電激發光（Electro Luminescence ; EL)顯 示器、電漿顯示器面板（PDP)等。 此電漿處理裝置是具有方筒形狀之氣密的本體容器1 ，其係由導電性材料、例如內壁面被陽極氧化處理的鋁所 u 構成。此本體容器1是可分解裝配，藉由接地線la來接 地。本體容器1是藉由電介體壁2來上下區劃成天線室3 及處理室4。因此，電介體壁2是構成處理室4的頂部壁 。電介體壁2是以Al2〇3等的陶瓷、石英等所構成。 在電介體壁2的下側部分嵌入有處理氣體供給用的淋 浴框體11。淋浴框體Π是設成十字狀，形成由下支撐電 介體壁2的構造。另外，支撐上述電介體壁2的淋浴框體 11是形成藉由複數根的吊桿（未圖示）來吊於本體容器1 €) 的頂部之狀態。 此淋浴框體11是以導電性材料，較理想是以金屬， 例如以污染物不會發生的方式在其內面施以陽極氧化處理 的鋁所構成。在此淋浴框體11形成有水平延伸的氣體流 路12，在此氣體流路12連通有朝下方延伸的複數個氣體 吐出孔12a。另一方面，在電介體壁2的上面中央設有氣 體供給管20a，而使能夠連通至此氣體流路1 2。氣體供給 管20a是從本體容器1的頂部往其外側貫通’連接至包含 -10- 201026166 處理氣體供給源及閥系統等的處理氣體供給系20。因 在電漿處理中，從處理氣體供給系20所供給的處理 會經由氣體供給管20a來供給至淋浴框體11內，從 面的氣體吐出孔12a往處理室4內吐出。 本體容器1的天線室3的側壁3a與處理室4的 4a之間設有突出至內側的支撐棚5，在此支撐棚5上 電介體壁2。 φ 在天線室3內是在電介體壁2之上以能夠面向電 壁2的方式配設有高頻（RF)天線13。此高頻天線 藉由絕緣構件所構成的間隔物17來離電介體壁2 — 。高頻天線1 3是具有：在外側部分綿密配置天線線 的外側天線部1 3 a、及在內側部分綿密配置天線線而 內側天線部13b。該等外側天線部13a及內側天線部 是如圖2所示構成渦卷狀的多重（四重）天線。另外 重天線的構成亦可爲內側外側皆二重的構成、或內側 ® 外側四重的構成。 外側天線部13a是將4條的天線線予以各90°錯 置而全體配置成大致矩形狀，其中央部是成爲空間。 ’往各天線線是可經由中央的4個端子22a來給電。 ’各天線線的外端部爲了使天線線的電壓分布變化， 由電容器18a來連接至天線室3的側壁然後接地。但 可不經由電容器18a來直接接地，且亦可在端子22a 分或天線線的途中、例如在彎曲部100a插入電容器。 又，內側天線部13b是在外側天線部13a的中央 此， 氣體 其下 側壁 載置 介體 13是 間隔 而成 成的 13b ，多 二重 開位 並且 而且 而經 ，亦 的部 部的 -11 - 201026166 空間將4條的天線線予以各90°錯開位置而全體配置大致 矩形狀。並且，往各天線線是可經由中央的4個端子2 2b 來給電。而且，各天線線的外端部爲了使天線線的電壓分 布變化，而經由電容器18b來連接至天線室3的上壁然後 接地。但，亦可不經由電容器18b來直接接地，且亦可在 端子22b的部分或天線的途中、例如彎曲部100b插入電 容器。然後，在內側天線部1 3b的最外側的天線線與外側 天線部1 3 a的最內側的天線線之間形成大的空間。 @ 在天線室3的中央部附近設有：對外側天線部13a給 電的4個第1給電構件16a及對內側天線部13b給電的4 個第2給電構件16b (在圖1是皆僅顯示1個），各第1 給電構件16a的下端是被連接至外側天線部13a的端子 22a，各第2給電構件16b的下端是被連接至內側天線部 13b的端子22b。該等第1及第2給電構件16a及16b是 經由整合器14來連接高頻電源15。高頻電源15及整合器 14是被給電線19連接，給電線19是在整合器14的下游 © 側分歧成給電線19a及19b，給電線19a會被連接至4個 的第1給電構件16a，給電線19b會被連接至4個的第2 給電構件16b。在給電線19a間裝有可變電容器VC。因此 ，藉由此可變電容器VC及外側天線部13a來構成外側天 線電路。另一方面，內側天線電路是只以內側天線部1 3 b 所構成。然後，藉由調節可變電容器VC的電容，如後述 般，外側天線電路的阻抗會被控制，可調節流至外側天線 電路與內側天線電路的電流大小關係。 -12- 201026166 在電漿處理中，從高頻電源15是電感電場形成用 例如頻率爲1 3.56MHz的高頻電力會被供給至高頻天線 ，藉由如此被供給高頻電力的高頻天線13來形成電感 場於處理室4內，藉由此電感電場來使從淋浴框體11 供給的處理氣體電漿化。此時的電漿的密度分布是藉由 制可變電容器VC之外側天線部13a與內側天線部13b 阻抗來控制。 0 在處理室4內的下方，以能夠隔著電介體壁2來與 頻天線13對向的方式設有用以載置LCD玻璃基板G的 置台23。載置台23是以導電性材料、例如表面被施以 極氧化處理的鋁所構成。被載置於載置台23的LCD玻 基板G是藉由靜電吸盤（未圖示）來吸附保持° 載置台23是被收納於絕緣體框24內，且被中空的 柱25所支撐。支柱25是一邊將本體容器1的底部維持 氣密狀態一邊貫通’被配設於本體容器1外的昇降機構 未圖示）所支撑，在基板G的搬出入時藉由昇降機構來 載置台23驅動於上下方向。另外，在收納載置台23的 緣體框24與本體容器1的底部之間配設有氣密包圍支 25的波紋管26’藉此即使載置台23上下作動還是可保 處理容器4內的氣密性。並且’在處理室4的側壁4a 有用以搬出入基板G的搬出入口 27a及予以開閉的閘 27 〇 在載置台23是藉由設於中空的支柱25內的給電 25a來經由整合器28而連接高頻電源29。此高頻電源 之 13 電 所 控 的 商 載 陽 璃 支 於 ( 使 絕 柱 證 設 閥 線 -13- 29 201026166 是在電漿處理中，將偏壓用的高頻電力、例如頻率爲 6MHz的高頻電力施加於載置台23。藉由此偏壓用的高頻 電力，將處理室4內所生成之電槳中的離子有效地引入至 基板G。 更在載置台23內，爲了控制基板G的溫度’而設有 由陶瓷加熱器等的加熱手段、冷媒流路等所構成的溫度控 制機構、及溫度感測器（皆未圖示）°對該等的機構或構 件的配管或配線皆是經過中空的支柱25來導出至本體容 ® 器1外。 在處理室4的底部是經由排氣管31來連接包含真空 泵等的排氣裝置30。藉由此排氣裝置30來將處理室4排 氣，在電漿處理中，將處理室4內設定維持於特定的真空 環境（例如1 · 3 3 P a )。 在被載置於載置台23的基板G的背面側形成有冷卻 空間（未圖示），設有He氣體流路41 ’其係用以供給He 氣體，作爲一定壓力的熱傳達用氣體。藉由如此對基板G © 的背面側供給熱傳達用氣體，可在真空下迴避基板G的溫 度上昇或溫度變化。 在He氣體流路41連接He氣體路線42’在此He氣 體路線42連接未圖示的He源。在此He氣體路線42設有 壓力控制閥44，在其下游側設有連結至He氣體槽47的 配管43。在He氣體路線42與配管43的連接部的下游側 設有開閉閥45，更在其下游側連接開放路線48 ’在此開 放路線48設有解除閥49。在槽47中是被充塡對槽47的 -14- 201026166 容量而言最適壓力的He氣體，而使基板G的背面側的冷 卻空間能夠形成與在設定壓力下充滿時同等的壓力，可從 此槽47迅速地對冷卻空間供給熱傳達用的He氣體。另外 ，熱傳達用氣體並非限於He氣體，亦可爲其他的氣體。 此電槳處理裝置的各構成部是形成被連接至由電腦所 構成的控制部5 0而來控制的構成。並且，在控制部5 0連 接有由鍵盤、顯示器等所構成使用者介面51，該鍵盤是爲 了工程管理者管理電漿處理裝置而進行命令的輸入操作等 ，顯示器是使電漿處理裝置的操業狀況可視化顯示。更在 控制部50連接有記憶部52，該記憶部52是儲存有用以在 控制部50的控制下實現在電漿處理裝置所被實行的各種 處理的控制程式或按照處理條件來使處理實行於電漿處理 裝置的各構成部的程式亦即處方。處方可被記憶於硬碟或 半導體記憶體，或亦可在收容於CD-ROM、DVD等可搬性 的記憶媒體的狀態下設定於記憶部52的特定位置。又， Φ 亦可由其他的裝置例如經由專用線路來使處方適當傳送。 然後，因應所需，以來自使用者介面5 1的指示等，從記 憶部52叫出任意的處方，使實行於控制部50，在控制部 50的控制下，進行電漿處理裝置的所望處理。 圖3是表示往第1實施形態的電漿處理裝置所具備的 高頻天線13之給電電路的一例圖。 如圖3所示，來自高頻電源15的高頻電力是經由整 合器14來供給至高頻天線13。高頻天線13包含具有彼此 並聯的天線電路之並列天線部。本例的並列天線部是具有 -15- 201026166 :外側天線電路13a、及與此外側天線電路13a並聯的內 側天線電路13b。 又，本例是設定成外側天線電路1 3 a的阻抗與內側天 線電路1 3 b的阻抗會彼此成逆相位。例如，本例是外側天 線電路13a的阻抗被設定成電容性，內側天線電路13b的 阻抗被設定成電感性。當然亦可爲相反，將外側天線電路 1 3 a的阻抗設定成電感性，將內側天線電路1 3b的阻抗設 定成電容性。 n 爲了設定成外側天線電路13a的阻抗與內側天線電路 1 3b的阻抗會彼此成逆相位，例如只要改變被鄰接至外側 天線電路13a的電容與被連接至內側天線電路13b的電容 即可。將如此的電路之一例顯示於圖4。 在圖4所示的一例中，外側天線電路1 3 a及內側天線 電路13b的雙方是具備線圈La、Lb。並且，在外側天線 電路13a比內側天線電路13b更多連接一個電容器C。圖 5是表示阻抗之電容器C的容依存性。 @ 如圖5所示，內側天線電路1 3b的阻抗是即使令電容 器C變化也不變化。在本例，內側天線電路13b的阻抗是 維持電感性。 相對的，外側天線電路1 3 a的阻抗是一旦使電容器C 變化則變化。具體而言，當電容器C的電容大時，外側天 線電路1 3 a的阻抗是顯示與內側天線電路1 3b同電感性（ 內側與外側的阻抗同相位），但若縮小電容器C的値，則 會以阻抗成的點A爲境界，外側天線電路13a的阻抗 -16- 201026166 從電感性變換成電容性（內側與外側的阻抗爲逆相位）。 如此，一旦使外側天線電路1 3 a的阻抗與內側天線電 路13b的阻抗形成逆相位，則流至外側天線電路13a的電 流（外側電流lout )與流至內側天線電路13b的電流（內 側電流Iin )會形成逆相位。圖6是表示外側電流lout及 內側電流Πη之電容器C的電容依存性。 如圖6所示，一旦縮小電容器C的電容，則外側電流 e lout會顯示增加的傾向，但內側電流Iin則是顯示減少的 傾向。內側電流Iin是以圖5所示的阻抗成爲“0”的點A， 亦即外側天線電路13a的阻抗與內側天線電路13b的阻抗 成爲逆相位的點爲境界，極性形成相反。亦即，外側電流 lout的相位與內側電流Iin的相位會彼此成爲逆相位。 外側電流lout是外側天線電路1 3a的阻抗與內側天線 電路1 3b的阻抗成爲逆相位之後，朝並列共振點B來使其However, in order to prepare a plurality of antennas for a plurality of applications, it takes a lot of labor to replace them according to the application of @, and recently, since the glass substrate for LCD is significantly enlarged, the antenna manufacturing cost is also expensive. Even if a plurality of antennas are prepared in this way, it is not necessarily an optimum condition in the application to be given, and it is necessary to respond by adjustment of the process conditions. In this regard, Patent Document 1 discloses a plasma processing apparatus that divides a spiral antenna into two portions of an inner portion and an outer portion to allow independent high-frequency currents to flow. According to such a configuration, the plasma density distribution can be made by adjusting the power supplied to the inner portion and the power supplied to the outer portion. However, in the technique described in Patent Document 1, it is necessary to provide two high-frequency power sources of the high-frequency power source for the inner portion of the spiral antenna and the high-frequency source for the outer portion, or to provide a power distribution circuit. Will form a large scale, the cost of the device will become higher. Further, in this case, the power loss is large, and the electric power cost is high, and it is difficult to perform high-precision plasma density distribution control. Then, Patent Document 2 discloses an inductively coupled plasma processing apparatus '-6-201026166 which is disposed in a processing chamber and has an outer antenna portion that mainly forms an inductive electric field in an outer portion and an inner antenna that mainly forms an inductive electric field in an inner portion. a high-frequency antenna of the unit, and a variable capacitor is connected to one of the outer antenna portion and the inner antenna portion, and the current 値 of the outer antenna portion and the inner antenna portion is controlled by adjusting the capacitance of the variable capacitor to control the formation in the processing chamber. Plasma electron density distribution of inductively coupled plasma. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Patent No. 30770009 [Patent Document 2] JP-A-2007-3 1 1 1 82 (Invention) [Problems to be Solved by the Invention] According to the inductively coupled plasma processing apparatus of Patent Document 2, by controlling the current 値 of the outer antenna portion and the inner antenna portion, it is possible to control the plasma electron density of the inductively coupled plasma formed in the processing chamber without changing the antenna. distributed. However, in Patent Document 2, although the plasma electron density distribution can be controlled, the power efficiency is, for example, almost unchanged from the inductively coupled plasma described in Patent Document 1. Therefore, when it is desired to obtain a plasma having a higher density, it is necessary to increase the amount of electric power supplied to the high-frequency electric power of the outer antenna portion and the inner antenna portion as in the related art. The present invention has been made in view of the circumstances, and an object thereof is to provide an inductively coupled plasma processing apparatus with better power efficiency, a plasma processing method 201026166 method, and a storage method for implementing the plasma processing method for inductively coupled electricity. A computer-readable memory medium for the program of the pulp processing device. In order to solve the problem, the inductively coupled plasma processing apparatus according to the first aspect of the present invention includes: a processing chamber that houses a substrate to be processed and performs plasma processing; and a mounting table that is attached to a processing substrate is placed in the processing chamber; a processing gas supply system supplies a processing gas exhaust system to the processing chamber, and exhausts the processing chamber; and an antenna circuit is disposed via a dielectric member An inductor electric field is formed in the processing chamber by supplying high-frequency power to the outside of the processing chamber: and a parallel circuit is connected in parallel to the antenna circuit, so that the impedance of the antenna circuit forms an inverse phase with the impedance of the parallel circuit. In the configuration, an inductively coupled plasma can be generated in the processing chamber. Further, a plasma processing method according to a second aspect of the present invention is a plasma processing method using an inductively coupled plasma processing apparatus, the inductively coupled plasma processing apparatus comprising: a processing chamber that houses a substrate to be processed and performs electricity a slurry processing; a mounting table for placing a substrate to be processed in the processing chamber; and a processing gas supply system for supplying a processing gas to the processing chamber -8-201026166, wherein the processing chamber is exhausted; a circuit that is disposed outside the processing chamber via a dielectric member, and that generates an inductive electric field in the processing chamber by supplying high-frequency power: and a parallel circuit that is connected in parallel to the antenna circuit, and is characterized in that: The impedance of the antenna circuit forms an inverse phase with the impedance of the parallel circuit, and an inductively coupled plasma is generated in the processing chamber. Further, a memory medium according to a third aspect of the present invention is a computer-readable memory medium in which a control program operating on a computer is stored, wherein the control program is configured to control an inductively coupled plasma processing device during execution. Further, the plasma processing method of the second aspect described above can be carried out. [Effects of the Invention] According to the present invention, it is possible to provide an inductively coupled plasma processing apparatus, a plasma processing method, and a storage method for storing the plasma processing method in an inductively coupled plasma processing apparatus. Program computer readable memory medium. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. (First Embodiment) Fig. 1 is a cross-sectional view showing an inductively coupled plasma device according to a first embodiment of the present invention, and a high frequency antenna using the inductively coupled plasma processing device. Floor plan. This device is, for example, an ashing treatment for etching or blocking a film of a metal film, an ITO film, an oxide film, or the like when a thin film transistor is formed on a glass substrate for FPD. Here, the FPD is, for example, a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), or the like. This plasma processing apparatus is an airtight main body container 1 having a rectangular tube shape, and is made of a conductive material such as aluminum whose inner wall surface is anodized. This body container 1 is decomposable and is grounded by a grounding wire la. The main body container 1 is vertically divided into an antenna chamber 3 and a processing chamber 4 by a dielectric wall 2. Therefore, the dielectric wall 2 is the top wall constituting the processing chamber 4. The dielectric wall 2 is made of ceramic such as Al 2 〇 3 or quartz. A shower frame 11 for supplying a processing gas is embedded in a lower portion of the dielectric wall 2. The shower frame body is formed in a cross shape to form a structure in which the dielectric wall 2 is supported by the lower portion. Further, the shower casing 11 supporting the dielectric wall 2 is in a state of being suspended from the top of the main body container 1 () by a plurality of hangers (not shown). The shower frame 11 is made of a conductive material, and is preferably made of a metal, for example, anodized aluminum is applied to the inner surface thereof in such a manner that contaminants do not occur. The shower housing 11 is formed with a horizontally extending gas flow path 12, and the gas flow path 12 communicates with a plurality of gas discharge holes 12a extending downward. On the other hand, a gas supply pipe 20a is provided at the center of the upper surface of the dielectric wall 2 to allow communication with the gas flow path 12. The gas supply pipe 20a is connected to the outside from the top of the main body container 1 and is connected to a processing gas supply system 20 including a processing gas supply source of -10-201026166, a valve system, and the like. In the plasma processing, the processing supplied from the processing gas supply system 20 is supplied into the shower casing 11 through the gas supply pipe 20a, and is discharged from the gas discharge hole 12a in the surface into the processing chamber 4. Between the side wall 3a of the antenna chamber 3 of the main body container 1 and the chamber 4a of the processing chamber 4, a support shed 5 projecting to the inner side is provided, on which the dielectric wall 2 is supported. φ In the antenna chamber 3, a high frequency (RF) antenna 13 is disposed on the dielectric wall 2 so as to face the electric wall 2. The high frequency antenna is separated from the dielectric wall 2 by a spacer 17 formed of an insulating member. The high-frequency antenna 13 has an outer antenna portion 13a that is densely arranged with an antenna line on the outer side, and an antenna line 13b disposed inside the inner portion. The outer antenna portion 13a and the inner antenna portion are vortex-shaped multiplex (quadruple) antennas as shown in Fig. 2 . Further, the configuration of the heavy antenna may be a configuration in which the inner side is doubled or the inner side + the outer side is quadruple. In the outer antenna portion 13a, the four antenna wires are shifted by 90° each, and are arranged in a substantially rectangular shape as a whole, and the central portion thereof is a space. Each of the antenna lines is electrically connectable via the four central terminals 22a. In order to change the voltage distribution of the antenna line, the outer end portion of each antenna line is connected to the side wall of the antenna room 3 by the capacitor 18a and then grounded. However, the capacitor may be directly grounded without passing through the capacitor 18a, and the capacitor may be inserted in the middle of the terminal 22a or the antenna line, for example, in the bent portion 100a. Further, the inner antenna portion 13b is located at the center of the outer antenna portion 13a, and the lower side wall mounting medium 13 of the gas is formed by the interval 13b, which is more than two-folded and the other portion is also -11 - 201026166 Spaces Four antenna lines are placed at 90° offset positions, and the whole is arranged in a substantially rectangular shape. Further, each antenna line can be powered via the four terminals 2 2b in the center. Further, the outer end portion of each antenna wire is connected to the upper wall of the antenna room 3 via the capacitor 18b in order to change the voltage distribution of the antenna line, and is then grounded. However, the capacitor may be directly grounded without passing through the capacitor 18b, and may be inserted into the capacitor at the portion of the terminal 22b or the middle of the antenna, for example, the bent portion 100b. Then, a large space is formed between the outermost antenna line of the inner antenna portion 13b and the innermost antenna line of the outer antenna portion 13a. @ In the vicinity of the center portion of the antenna room 3, four first power feeding members 16a for supplying power to the outer antenna portion 13a and four second power feeding members 16b for powering the inner antenna portion 13b are provided (only one is shown in Fig. 1) The lower end of each of the first power feeding members 16a is a terminal 22a that is connected to the outer antenna portion 13a, and the lower end of each of the second power feeding members 16b is a terminal 22b that is connected to the inner antenna portion 13b. The first and second power feeding members 16a and 16b are connected to the high frequency power source 15 via the integrator 14. The high-frequency power source 15 and the integrator 14 are connected to the electric wires 19, and the electric wires 19 are branched into the electric wires 19a and 19b on the downstream side of the integrator 14, and the electric wires 19a are connected to the four first electric power transmitting members 16a. The supply wire 19b is connected to the four second power feeding members 16b. A variable capacitor VC is provided between the supply wires 19a. Therefore, the outer antenna circuit is constituted by the variable capacitor VC and the outer antenna portion 13a. On the other hand, the inner antenna circuit is constituted only by the inner antenna portion 1 3 b. Then, by adjusting the capacitance of the variable capacitor VC, as will be described later, the impedance of the outer antenna circuit is controlled, and the magnitude of the current flowing to the outer antenna circuit and the inner antenna circuit can be adjusted. -12- 201026166 In the plasma processing, the high-frequency power source 15 is an inductor electric field forming. For example, high-frequency power having a frequency of 1. 3.5 MHz is supplied to the high-frequency antenna, and the high-frequency antenna to which the high-frequency power is supplied is thus supplied. The inductor field is formed in the processing chamber 4, and the processing gas supplied from the shower housing 11 is plasmad by the electric field. The density distribution of the plasma at this time is controlled by the impedance of the outer antenna portion 13a and the inner antenna portion 13b of the variable capacitor VC. A lower stage 23 in the processing chamber 4 is provided with a mounting table 23 for placing the LCD glass substrate G so as to be opposed to the frequency antenna 13 via the dielectric wall 2. The mounting table 23 is made of a conductive material such as aluminum whose surface is subjected to a polar oxidation treatment. The LCD glass substrate G placed on the mounting table 23 is sucked and held by an electrostatic chuck (not shown). The mounting table 23 is housed in the insulator frame 24 and supported by the hollow column 25. The support column 25 is supported by the elevating mechanism (not shown) disposed outside the main body container 1 while maintaining the airtight state of the bottom of the main body container 1 , and the table 23 is placed by the elevating mechanism when the substrate G is carried in and out. Drive in the up and down direction. Further, a bellows 26' for airtightly surrounding the branch 25 is disposed between the edge frame 24 accommodating the mounting table 23 and the bottom of the main body container 1 so that the gas in the container 4 can be handled even if the mounting table 23 is moved up and down. Confidentiality. Further, the side wall 4a of the processing chamber 4 has a carry-out port 27a for carrying in and out of the substrate G, and a shutter 27 for opening and closing. The mounting table 23 is connected via the integrator 28 by the power supply 25a provided in the hollow pillar 25. High frequency power supply 29. The high-frequency power supply of the 13-electrical control of the solar-powered glass is used to make the high-frequency power, such as the frequency of 6MHz, in the plasma processing. The high-frequency power is applied to the mounting table 23. The ions in the electric paddle generated in the processing chamber 4 are efficiently introduced into the substrate G by the high-frequency electric power for biasing. Further, in the mounting table 23, in order to control the substrate A temperature control mechanism including a heating means such as a ceramic heater, a refrigerant flow path, or the like, and a temperature sensor (not shown) are attached to the temperature of G, and piping or wiring of the mechanism or member is performed. All of them are led out to the outside of the body container 1 through the hollow pillars 25. At the bottom of the processing chamber 4, an exhaust device 30 including a vacuum pump or the like is connected via an exhaust pipe 31. By this, the exhaust device 30 is used for processing. The chamber 4 is exhausted, and the inside of the processing chamber 4 is maintained in a specific vacuum environment (for example, 1 · 3 3 P a ) in the plasma processing. Cooling is formed on the back side of the substrate G placed on the mounting table 23 Space (not shown), He gas flow path 41 ' is used By supplying the He gas as a heat transfer gas at a constant pressure, by supplying the heat transfer gas to the back side of the substrate G © , the temperature rise or the temperature change of the substrate G can be avoided under vacuum. The He gas path 42' is connected to the He gas source 42 to which a He source (not shown) is connected. Here, the He gas path 42 is provided with a pressure control valve 44, and the downstream side thereof is provided with a pipe 43 connected to the He gas tank 47. The downstream side of the connection portion between the He gas path 42 and the pipe 43 is provided with an opening and closing valve 45, and the downstream side is connected to the opening route 48'. Here, the opening path 48 is provided with a release valve 49. In the groove 47, the groove is filled. -14 - 201026166 of 47 is the He gas which is the optimum pressure for the capacity, and the cooling space on the back side of the substrate G can be formed to have the same pressure as when it is filled under the set pressure, and the heat can be quickly supplied to the cooling space from the groove 47. The gas for heat transfer is not limited to He gas, and may be other gases. Each component of the electric paddle processing device is controlled to be connected to a control unit 50 composed of a computer. Composition Further, a control unit 50 is connected to a user interface 51 composed of a keyboard, a display, etc., which is an input operation for commanding an engineer to manage the plasma processing apparatus, and the display is a plasma processing apparatus. The operating condition is visually displayed. Further, the control unit 50 is connected to a storage unit 52 that stores a control program for realizing various processes performed by the plasma processing device under the control of the control unit 50 or according to processing conditions. The prescription is a recipe that is applied to each component of the plasma processing apparatus. The prescription can be stored in a hard disk or a semiconductor memory, or can be stored in a portable memory medium such as a CD-ROM or a DVD. The lower position is set at a specific position of the storage unit 52. Further, Φ may be appropriately transmitted by another device, for example, via a dedicated line. Then, if necessary, an arbitrary prescription is called from the storage unit 52 by an instruction from the user interface 51, and the control unit 50 is executed, and the desired processing of the plasma processing apparatus is performed under the control of the control unit 50. . Fig. 3 is a view showing an example of a power feeding circuit of the radio-frequency antenna 13 included in the plasma processing apparatus of the first embodiment. As shown in Fig. 3, the high frequency power from the high frequency power source 15 is supplied to the high frequency antenna 13 via the combiner 14. The high frequency antenna 13 includes a parallel antenna portion having antenna circuits connected in parallel with each other. The parallel antenna portion of this example has an outer antenna circuit 13a having -15 - 201026166: and an inner antenna circuit 13b connected in parallel with the outer antenna circuit 13a. Further, in this example, the impedance of the outer antenna circuit 13 3a and the impedance of the inner antenna circuit 13 b are set to be opposite to each other. For example, in this example, the impedance of the outer antenna circuit 13a is set to be capacitive, and the impedance of the inner antenna circuit 13b is set to be inductive. Alternatively, the impedance of the outer antenna circuit 13a may be set to be inductive, and the impedance of the inner antenna circuit 13b may be set to be capacitive. n In order to set the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b to be opposite to each other, for example, the capacitance adjacent to the outer antenna circuit 13a and the capacitance connected to the inner antenna circuit 13b may be changed. An example of such a circuit is shown in FIG. In the example shown in Fig. 4, both of the outer antenna circuit 13a and the inner antenna circuit 13b are provided with coils La and Lb. Further, one capacitor C is connected to the outer antenna circuit 13a more than the inner antenna circuit 13b. Fig. 5 is a view showing the capacitance dependence of the capacitor C of the impedance. @ As shown in Fig. 5, the impedance of the inner antenna circuit 13b does not change even if the capacitor C is changed. In this example, the impedance of the inner antenna circuit 13b is maintained inductive. In contrast, the impedance of the outer antenna circuit 13 3 changes once the capacitor C is changed. Specifically, when the capacitance of the capacitor C is large, the impedance of the outer antenna circuit 13 a is the same as that of the inner antenna circuit 13 b (the inner and outer impedances are in phase), but if the capacitance of the capacitor C is reduced, The point A of the impedance is taken as the boundary, and the impedance of the outer antenna circuit 13a-16-201026166 is converted from inductive to capacitive (the inner and outer impedances are reversed). Thus, once the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b are reversed, the current flowing to the outer antenna circuit 13a (outer current lout) and the current flowing to the inner antenna circuit 13b (inside current Iin) ) will form an inverse phase. Fig. 6 is a graph showing the capacitance dependence of the capacitor C of the outside current lout and the inside current Πη. As shown in Fig. 6, once the capacitance of the capacitor C is reduced, the outer current e lout tends to increase, but the inner current Iin tends to decrease. The inner current Iin is a point A at which the impedance shown in Fig. 5 is "0", that is, a point at which the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b are opposite phases, and the polarities are opposite. That is, the phase of the outer current lout and the phase of the inner current Iin are opposite to each other. The outside current lout is such that the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b are opposite phases, and then the parallel resonance point B is made
量急劇增大。電容器C會變更小，一旦通過並列共振點B ® ，則外側電流lout是極性成爲相反之後，使其量急劇減少 〇 內側電流Iin是顯示與外側電流lout完全相反的舉動 ，在外側天線電路13a的阻抗與內側天線電路13b的阻抗 形成逆相位之後，朝並列共振點B，雖爲與外側電流lout 相反極性，但使其量急劇增大。電容器C會變更小，一旦 通過並列共振點B，則內側電流I i η在極性成爲相反後， 使其量急劇減少。圖7是表示圖6所示的外側電流lout的 絕對値、及內側電流Iin的絕對値。 -17- 201026166 所謂外側電流lout的相位與內側電流Iin的相位形成 逆相位’是意指如圖8A或圖8B所不，外側電流lout的 方向與內側電流Iin的方向爲形成相反，在彼此並聯的外 側天線電路1 3 a與內側天線電路1 3 b之間產生循環電流。 如此的狀態是在圖5所示的內側與外側的阻抗爲逆相位的 區域、及圖6所示的內側與外側的電流爲逆相位的區域中 發生。 附帶說明，當外側電流lout的相位與內側電流Iin的 @ 相位爲同相位時，如圖9A或圖9B所示，因爲外側電流 lout的方向與內側電流Iin的方向相同，所以循環電流不 會發生。如此的圖9A或圖9B所示的狀態是在圖5所示的 內側與外側的阻抗爲同相位的區域、及圖6所示的內側與 外側的電流同相位的區域中發生。 如此，第1實施形態的電漿處理裝置是在處理室4內 生成電感耦合電漿時，在並聯的天線電路之中，將一方的 天線電路的阻抗與另一方的天線電路的阻抗設爲逆相位’ ® 而於處理室4內生成電感耦合電漿。本例是將內側天線電 路1 3b的阻抗設爲電感性，將外側天線電路1 3 a的阻抗設 爲電容性，而於處理室4內生成電感耦合電漿。 其次，說明外側電流lout的相位與內側電流Πη的相 位形成逆相位時的優點。 圖10是表示在處理室內載置的被處理基板上的電獎 電子密度的分布圖。 圖10是以黑圓點（均一位置）、黑四角（內密位置 -18- 201026166 )、黑三角（外密位置）來表示將 內側電流Πη的相位設爲逆相位時 。並且，在圖1〇中，以白圓點（ 側電流lout的相位與內側電流Πη 電漿電子密度的分布，作爲參考例 如圖10所示，在將外側電流 Iin的相位設爲逆相位時，與設爲 φ 得電漿電子密度高的結果。 亦即，將高頻天線13設爲包 電路的並列天線部之高頻天線，且 ，將一方的天線電路的阻抗與另一 爲逆相位，而使循環電流產生於所 態下在處理室內生成電感耦合電漿 流產生時、亦即將一方的天線電路 電路的阻抗設爲同相位時作比較， • 高密度的電漿電子。因此’若根據 理裝置，則即使不提高高頻電力的 高密度的電漿。 又，如圖1 〇所示，若根據第 裝置，則亦可控制電漿電子密度的 例如圖1 〇中的黑四角所示’ 被處理基板內側（中央附近）提高 電流I i η與外側電流I 〇 u t彼此爲 Iin的絕對値形成比外側電流Iout 外側電流lout的相位與 的電漿電子密度的分布 均一位置）來表示將外 的相位設爲同相位時的 〇 lout的相位與內側電流 同相位時作比較，可取 含具有彼此並聯的天線 在並聯的天線電路之中 方的天線電路的阻抗設 被並聯的天線電路的狀 。藉此，與不使循環電 的阻抗與另一方的天線 功率效率高，可取得更 第1實施形態的電漿處 電力量，還是可取得更 1實施形態的電漿處理 分布D 想要使電漿電子密度在 (內密）時，只要內側 逆相位，且使內側電流 的絕對値更大的狀態（ -19 - 201026166The amount has increased dramatically. The capacitor C is changed little. Once the parallel resonance point B ® is passed, the outside current lout is reversed, and the amount is sharply decreased. The inner current Iin is displayed in a completely opposite manner to the outer current lout, and the outer antenna circuit 13a is After the impedance forms an inverse phase with the impedance of the inner antenna circuit 13b, the parallel resonance point B has a polarity opposite to the outer current lout, but the amount thereof sharply increases. The capacitor C is changed little, and once it passes through the parallel resonance point B, the inner current I i η abruptly decreases in polarity after the polarity is reversed. Fig. 7 is a view showing the absolute 値 of the outside current lout and the absolute 値 of the inside current Iin shown in Fig. 6. -17- 201026166 The phase of the outer current lout and the phase of the inner current Iin form an inverse phase 'meaning that the direction of the outer current lout is opposite to the direction of the inner current Iin, as shown in FIG. 8A or FIG. 8B, in parallel with each other. A circulating current is generated between the outer antenna circuit 1 3 a and the inner antenna circuit 13 b. Such a state occurs in a region in which the inner and outer impedances shown in Fig. 5 are opposite phases, and a region in which the inner and outer currents shown in Fig. 6 are opposite phases. Incidentally, when the phase of the outside current lout is in phase with the @ phase of the inside current Iin, as shown in FIG. 9A or FIG. 9B, since the direction of the outside current lout is the same as the direction of the inside current Iin, the circulating current does not occur. . Such a state shown in Fig. 9A or Fig. 9B occurs in a region in which the inner and outer impedances shown in Fig. 5 are in the same phase, and the inner and outer currents shown in Fig. 6 are in the same phase. As described above, in the plasma processing apparatus according to the first embodiment, when the inductively coupled plasma is generated in the processing chamber 4, the impedance of one of the antenna circuits and the impedance of the other antenna circuit are reversed among the parallel antenna circuits. The phase ' ® generates an inductively coupled plasma in the process chamber 4 . In this example, the impedance of the inner antenna circuit 13b is made inductive, and the impedance of the outer antenna circuit 13a is made capacitive, and an inductively coupled plasma is generated in the processing chamber 4. Next, an advantage in the case where the phase of the outside current lout and the phase of the inside current Πη form an opposite phase will be described. Fig. 10 is a view showing a distribution of electron density of electrons on a substrate to be processed placed in a processing chamber. Fig. 10 shows the case where the phase of the inner current Πη is reversed by a black dot (homogeneous position), a black square (internal density position -18-201026166), and a black triangle (outer dense position). Further, in FIG. 1A, the white dot (the distribution of the phase of the side current lout and the plasma current density of the inner current Πη as a reference, for example, as shown in FIG. 10, when the phase of the outer current Iin is set to the opposite phase, The result is that the plasmon electron density is set to be φ, that is, the high frequency antenna 13 is a high frequency antenna of the parallel antenna portion of the packet circuit, and the impedance of one of the antenna circuits is opposite to the other. When the circulating current is generated in the state where the inductively coupled plasma flow is generated in the processing chamber, that is, when the impedance of one of the antenna circuit circuits is set to be the same phase, the high-density plasma electrons are used. The device does not increase the high-density plasma of high-frequency power. Further, as shown in FIG. 1A, if the device is used, the plasma electron density can be controlled, for example, as indicated by the black squares in FIG. The inside of the substrate to be processed (near the center) increases the current I i η and the outside current I 〇ut are Iin absolute 値 formation ratio of the outer current Iout the outer current lout and the plasma electron density distribution The position is shown as a comparison between the phase of the 〇lout when the outer phase is set to the same phase and the phase of the inner current. The impedance of the antenna circuit including the antennas connected in parallel with each other in parallel is connected in parallel. The shape of the antenna circuit. Therefore, it is possible to obtain the plasma electric power amount of the first embodiment or to obtain the plasma processing distribution D of the first embodiment without making the impedance of the circulating electric power high and the power efficiency of the other antenna high. When the density of the plasma electrons is (internal density), as long as the inner side is reversed, and the absolute value of the inner current is larger ( -19 - 201026166
Iin>I〇ut)下，於處理室內生成電感耦合電漿即可。 形成“Iin>Iout”的狀態是例如在圖5中，可在內側與 外側的阻抗爲逆相位的區域，且縮小電容器C而通過並列 共振點B後的區域看見。區域是內側天線電路13b的阻抗 (內側Z )比外側天線電路1 3a的阻抗（外側Z )更小的 區域。 如圖10中的黑三角所示般，想要相反地使電漿電子 密度在被處理基板外側（邊緣附近）提高（外密）時，只 @ 要內側電流Πη與外側電流iout彼此爲逆相位，且外側電 流lout的絕對値比內側電流Iin的絕對値更大的狀態（ I〇ut>Iin)下，於處理室內生成電感耦合電漿即可。 形成“Iout>Iin”的狀態是例如在圖5中，可在內側與 外側的阻抗爲逆相位的區域，且縮小電容器C而至並列共 振點B的區域看見。此區域是外側天線電路13a的阻抗（ 外側Z )比內側天線電路1 3 b的阻抗（內側z )更小的區 域。 ❹ 又，如圖1 〇中的黑圓點所示，想要使電漿電子密度 從被處理基板內側（中央附近）到被處理基板外側（邊緣 附近）形成均一時（均一），只要內側電流I in與外側電 流lout彼此爲逆相位，且外側電流I〇ut的絕對値與內側 電流Iin的絕對値大致相等的狀態（l〇ut^Iin)下，於處 理室內生成電感耦合電漿即可。 形成“lout与Iin”的狀態是例如在圖5中，可在內側跑 外側的阻抗爲逆相位的區域’且並列共振點B附近，例如 -20- 201026166 符號C所示的區域看見。並且’在此區域c中，外 電路13a的阻抗（外側z )與內側天線電路13b的 內側Z)是大致相等。 如此，若根據第1實施形態的電漿處理裝置， 側與外側的阻抗爲逆相位的區域中，亦可藉由控制 線電路13a的阻抗與內側天線電路13b的阻抗來控 室內的電漿電子密度的分布。 φ 又，例如圖11所示般，只要將電容器C設爲 容器VC，即使不更換高頻天線13，還是可在一個 耦合電漿處理裝置中，將電漿電子密度的分布分別 內密、外密、均一。 又，亦可更設置一控制手段，其係於處理時， 按各應用取得最適的電漿密度分布之方式，預先設 調節手段，例如調節可變電容器VC的電容之調節 在特定的應用被選擇時，使對應於該應用，以能夠 ® 先設定調節參數的最適値之方式，控制可變電容器 電容。 又’處理爲例如CVD那樣的成膜處理時，亦 被成膜的膜的膜厚能夠形成均一之方式，在成膜處 索可變電容器VC的電容，例如從內密到外密，且 到均一那樣搜索控制可變電容器VC的電容。 又’並列共振點B及其附近的區域是阻抗變得 。因此，使用整合器14的阻抗整合困難。 於是’外側天線電路1 3 a與內側天線電路1 3 b 側天線 阻抗（ 則在內 外側天 制處理 可變電 的電感 控制成 以能夠 定阻抗 參數， 形成預 VC的 可以所 理中搜 從外密 非常高 可不使 -21 - 201026166 用並列共振的並列共振點B，在處理室內生成電感耦合電 漿。 又’除了並列共振點B以外，亦可不使用並列共振點 B附近的區域，在處理室內生成電感耦合電漿。 並列共振點B附近的區域之一例，如圖12所示，從 並列共振點B到電容性區域的高頻天線1 3的阻抗（天線 合計··圖中白四角）的最大値D1爲止的區域、及從並列 共振點B到電感性區域的高頻天線13的阻抗的最大値〇2 ' 0 爲止的區域。從電容性區域的最大値D1到電感性區域的 最大値D2爲止的區間D是高頻天線1 3的阻抗非常高的 區間。 因此’例如在控制可變電容器VC的電容時，不將可 變電容器VC的電容控制成高頻天線13的阻抗（天線合計 )會形成區間D的範圍。Under Iin>I〇ut), an inductively coupled plasma can be generated in the processing chamber. The state in which "Iin > Iout" is formed is, for example, a region in which the impedances on the inner side and the outer side are opposite phases, and the capacitor C is contracted and seen in the region after the parallel resonance point B. The area is a region where the impedance of the inner antenna circuit 13b (inside Z) is smaller than the impedance of the outer antenna circuit 13a (outer Z). As shown by the black triangle in FIG. 10, when it is desired to increase the plasma electron density on the outer side (near the edge) of the substrate to be processed (outside density), only the inner current Πη and the outer current iout are opposite to each other. In the state in which the absolute 値 of the outside current lout is larger than the absolute 値 of the inside current Iin (I〇ut>Iin), an inductively coupled plasma may be generated in the processing chamber. The state in which "Iout > Iin" is formed is, for example, a region in which the impedances on the inner side and the outer side are opposite phases, and the capacitor C is contracted to the region where the parallel resonance point B is seen. This area is a region where the impedance (outer Z) of the outer antenna circuit 13a is smaller than the impedance (inside z) of the inner antenna circuit 13b. ❹ Also, as shown by the black dot in Figure 1, you want to make the plasma electron density uniform (uniform) from the inside of the substrate (near the center) to the outside of the substrate (near the edge), as long as the inside current I in and the outside current lout are opposite to each other, and the absolute 値 of the outer current I〇ut is substantially equal to the absolute 値 of the inner current Iin (l〇ut^Iin), and the inductively coupled plasma can be generated in the processing chamber. . The state in which "lout and Iin" is formed is, for example, in Fig. 5, the area where the impedance outside the inner side is the reverse phase and the side of the parallel resonance point B, for example, the area indicated by the symbol C in -20-201026166 is seen. And in this region c, the impedance (outer z) of the outer circuit 13a and the inner side Z) of the inner antenna circuit 13b are substantially equal. As described above, according to the plasma processing apparatus of the first embodiment, in the region where the impedance of the side and the outside is reversed, the plasma electrons in the chamber can be controlled by the impedance of the control line circuit 13a and the impedance of the inner antenna circuit 13b. The distribution of density. φ Further, as shown in FIG. 11, as long as the capacitor C is used as the container VC, even if the high-frequency antenna 13 is not replaced, the distribution of the plasma electron density can be made densely and externally in a coupled plasma processing apparatus. Close and uniform. Moreover, a control means may be further provided, which is configured to adjust the capacitance of the variable capacitor VC in a specific application according to the manner in which the optimum plasma density distribution is obtained for each application. The variable capacitor capacitance is controlled in such a way as to be able to set the adjustment parameters first, corresponding to the application. Further, when the film formation process such as CVD is performed, the film thickness of the film to be formed can be uniform, and the capacitance of the variable capacitor VC can be connected at the film formation, for example, from inner to outer, and to The capacitance of the variable capacitor VC is controlled to be uniformly searched. Further, the side-by-side resonance point B and its vicinity are impedances. Therefore, the impedance integration using the integrator 14 is difficult. Then the 'outer antenna circuit 1 3 a and the inner antenna circuit 1 3 b side antenna impedance (the inner and outer antenna processing variable electric inductance is controlled to be able to determine the impedance parameter, forming the pre-VC can be managed from the outer dense Very high, it is not possible to use 21-201026166 to generate inductively coupled plasma in the processing chamber by the parallel resonance point B of the parallel resonance. In addition to the parallel resonance point B, it is also possible to generate a region in the processing chamber without using the region near the parallel resonance point B. Inductively coupled plasma. As an example of a region in the vicinity of the parallel resonance point B, as shown in Fig. 12, the impedance of the high-frequency antenna 13 from the parallel resonance point B to the capacitive region (the total of the four corners of the antenna in the figure) is the largest. The region from 値D1 and the region from the parallel resonance point B to the maximum 値〇2′ 0 of the impedance of the high-frequency antenna 13 in the inductive region. From the maximum 値D1 of the capacitive region to the maximum 値D2 of the inductive region The section D until now is a section in which the impedance of the high-frequency antenna 13 is extremely high. Therefore, for example, when controlling the capacitance of the variable capacitor VC, the capacitance of the variable capacitor VC is not controlled to a high frequency. Impedance of the line 13 (total of the antenna) will form the D range interval.
又’例如在搜索控制可變電容器VC的電容時，是在 搜索中搜索區間D。 Q 如此’在包含並列共振點B的其附近的區域D中’不 生成電感耦合電漿’或不進行處理，可令使用整合器14 的阻抗整合容易’可成爲功率效率更高的處理。 另外’在包含並列共振點B的其附近的區域D中不生 成電感耦合電漿’或不進行處理，並非限於可變電容器 VC’亦可適用被固定電容的電容器c。亦即，在使用被固 定電容的電容器C時，只要將電容器^的値設定成高頻天 線13的阻抗（天線合計）不會形成上述區域〇的範圍即 -22- 201026166 可 。 其次，說明有關使用以上那樣構成的電感耦合電漿蝕 刻裝置來對LCD玻璃基板G實施電漿蝕刻處理時的處理 動作。 首先，在開啓閘閥27的狀態下從此藉由搬送機構（ 未圖示）來將基板G搬入至處理室4內，在載置於載置台 23的載置面之後，藉由靜電吸盤（未圖示）來將基板G φ 固定於載置台23上。其次，在處理室4內從處理氣體供 給系20使處理氣體由淋浴框體11的氣體吐出孔12a吐出 至處理室4內，且利用排氣裝置30經由排氣管31來將處 理室4內予以真空排氣，藉此使處理室內維持於例如0.66 〜26.6Pa程度的壓力環境。 並且，此時在基板G的背面側的冷卻空間，爲了迴避 基板G的溫度上昇或溫度變化，而經由He氣體路線42、 He氣體流路41來供給He氣體作爲熱傳達用氣體。此情 ® 況，以往是從氣瓶直接對He氣體路線42供給He氣體， 以壓力控制閥來控制壓力，但裝置隨著基板的大型化而大 型化，因此氣體路線的距離會變長，氣體充滿的空間容量 會變大，從氣體供給到調壓完了的時間會變長，但在此因 爲在壓力控制閥44的下游側設置He氣體的槽47，於此 預先充塡He氣體，所以可以極短時間進行調壓。亦即， 在基板G的背面供給熱傳達用氣體的He氣體時，首先， 從槽47供給He氣體，不足分由來自以往的氣瓶的路線塡 補，藉此可瞬時取得接近設定壓力的壓力，且經由壓力控 -23- 201026166 制閥來塡補的氣體量也微量，因此可在極短時間內完成調 壓。此情況，充塡於槽47的氣體壓力較理想是以能夠形 成與在設定壓力下充滿冷卻空間時同等的方式，對槽47 的容量設成最適的壓力。另外，使氣體充塡於槽47的動 作較理想是在基板G的搬送時等，不影響基板處理時間時 進行。 其次，從高頻電源15來將例如13.56MHz的高頻施加 於高頻天線13,藉此經由電介體壁2在處理室4內形成均 φ 一的電感電場。藉由如此形成的電感電場，在處理室4內 使處理氣體電漿化，生成高密度的電感耦合電漿。 此情況，高頻天線13的構成是如上述般，具有：在 外側部分緊密地配置天線線而成的外側天線電路13a、及 在內側部分緊密地配置天線線而成的內側天線電路1 3b， 且在外側天線電路1 3 a，例如圖1所示，連接可變電容器 VC，而使能夠調節外側天線電路13a的阻抗。可變電容器 VC的調節是如上述般。 © 此情況，按各應用來掌握最適的電漿密度分布，預先 將可取得該電漿密度分布的可變電容器VC的位置設定於 記憶部52，藉此可藉由控制部50來按各應用選擇最適的 可變電容器VC的位置，進行電漿處理。 如此一來，可藉由利用可變電容器VC的阻抗控制來 控制電漿密度分布，因此不必更換天線，不需要更換天線 的勞力或按各應用來先準備天線的成本。 並且，藉由可變電容器VC的位置調節來進行極細的 -24 - 201026166 電流控制的同時，將外側天線電路1 3 a的阻抗與內側天線 電路13b的阻抗設爲彼此逆相位。藉此，可按照應用來取 得最適的電漿電子密度分布的同時，相較於將外側天線電 路13a的阻抗與內側天線電路13b的阻抗設爲同相位時， 可使電漿電子形成更高密度。 而且，不是使用複數的高頻電源來分配高頻電力的功 率，而是只藉由可變電容器VC來進行阻抗調整，進行外 φ 側天線電路1 3a與內側天線電路1 3b的電流控制及相位控 制，因此不會有因爲裝置規模大而成本變高、或電力成本 變高等的不宜存在，且控制的精度也可比使用複數的高頻 電源來分配功率時更高。 其次，說明高頻天線13的幾個電路例。 圖13A〜圖13D是表示高頻天線13的第1電路例〜 第4電路例的電路圖。 如圖13A所示，第1電路例的高頻天線13-1是在彼 ❹ 此並聯的外側天線電路13a及內側天線電路13b的雙方， 於整合器14與平面線圏La及Lb的一端之間連接可變電 容器VCa及VCb。平面線圈La及Lb的另一端是被共通 連接，連接至共通接地點GND。 在第1電路例中是調節可變電容器VCa及VCb的電 容，將外側天線電路13a的阻抗與內側天線電路13b的阻 抗設爲彼此逆相位。藉此，可提高功率效率。 又’由於可變電容器VCa及VCb爲可調節，因此可 使可變電容器VCa及VCb的電容對應於應用，以能夠形 -25- 201026166 成最適的値，例如內密、外密、均一那樣形成最適的電漿 電子密度分布之方式，功率效率佳地進行控制。又，處理 例如爲CVD那樣的成膜處理時，可在成膜處理中捜索可 變電容器VC a或VCb，例如可在成膜處理中搜索設於外側 天線電路13a的可變電容器VCa的電容，以所被成膜的膜 的膜厚能夠形成均一之方式，在成膜處理中使電漿電子密 度分布可在內密、外密、均一之間搜索控制。此情況，亦 先將外側天線電路13a的阻抗與內側天線電路13b的阻抗 @ 設爲彼此逆相位，而使能夠功率效率佳地在內密、外密、 均一之間搜索控制電漿電子密度分布。 如圖13B所示，第2電路例的高頻天線13-2與第1 電路例的高頻天線13-1比較，不同的是將可變電容器 VCa或VCb連接於共通接地點GND與平面線圈La及Lb 的另一端之間，將平面線圈La及Lb的一端共通連接至整 合器14。 在第2電路例也是調節可變電容器VCa及VCb的電 ® 容，將外側天線電路1 3 a的阻抗與內側天線電路1 3 b的阻 抗設爲彼此逆相位。 在如此的第2電路例中亦可取得與第1電路例同樣的 優點。 如圖13C所示，第3電路例的高頻天線13-3與第1 電路例的高頻天線1 3 -1比較，是只在外側天線電路1 3 a 設置可變電容器Va。第3電路例是與圖11所示的高頻天 線同樣的電路。 -26- 201026166 在第3電路例中是在調節可變電容器VCa的電容之下 ，將外側天線電路1 3 a的阻抗與內側天線電路1 3b的阻抗 設爲彼此逆相位。 在如此的第3電路例中亦可取得與第1及第2電路例 同樣的優點。 如圖13D所示，第4電路例的高頻天線13-4與第3 電路例的高頻天線13-3比較，不同的是將可變電容器 φ VCa連接於共通接地點GND與平面線圈La的另一端之間 ’將平面線圈La及平面線圈Lb的一端共通連接至整合器 14° 在第4電路例中也是在調節可變電容器VCa的電容之 下’將外側天線電路13a的阻抗與內側天線電路13b的阻 抗設爲彼此逆相位。 在如此的第4電路例中亦可取得與第1〜第3電路例 同樣的優點。 並且，在第1〜第4電路例是將設於外側天線電路 13a及/或內側天線電路13b的電容器設爲可調節電容的可 變電容器，但亦可爲被固定電容的電容器。此情況的電容 器的電容是只要設定成外側天線電路13a的阻抗與內側天 線電路1 3b的阻抗可形成彼此逆相位即可。 使用如此被固定電容的電容器時，也是相較於不將外 側天線電路1 3a的阻抗與內側天線電路1 3b的阻抗設爲逆 相位的高頻天線，可使處理室內所生成的電漿電子密度提 升’可取得具備功率效率更佳的高頻天線之電感耦合電漿 -27- 201026166 處理裝置。 並且，如到此所說明那樣，本發明的第1實施形態的 電感耦合電漿處理裝置是將外側天線電路13a的阻抗與內 側天線電路1 3 b的阻抗設爲逆相位。因此，在使電感耦合 電漿產生時期間，流至外側天線電路1 3 a的電流的相位與 流至內側天線電路1 3b的電流的相位會形成彼此逆相位。 一旦電流的相位彼此形成逆相位，則在外側天線電路 13a及內側天線電路13b的雙方使用平面線圈La、Lb時 _ ，如圖1 4所示，流動於平面線圈La的外側電流lout的方 向與流動於平面線圈Lb的內側電流Iin的方向會形成相 反。因此，藉由外側電流lout來作成的外側磁場的方向與 藉由內側電流Hn來作成的內側磁場的方向會形成逆向， 外側磁場與內側磁場會彼此打消，被導入至處理室內的磁 場會變弱。 爲了防止如此的外側磁場及內側磁場的彼此打消，如 圖1 5所示，可將外側天線電路1 3 a的平面線圈La與內側 Q 天線電路13b的平面線圈Lb設爲彼此逆卷。一旦將平面 線圈La與Lb設爲彼此逆卷，則電路上是外側電流lout 的方向與內側電流Iin的方向爲相反，但外觀上是使外側 電流lout的方向與內側電流Iin的方向一·致於同方向。因 此，外側磁場的方向與內側磁場的方向會形成相同，可防 止外側磁場及內側磁場的彼此打消。 (第2實施形態） -28- 201026166 第1實施形態的電感耦合電漿處理裝置是在彼此並聯 的外側天線電路13a與內側天線電路13b中，將一方的天 線電路的阻抗與另一方的天線電路的阻抗設爲逆相位，而 使循環電流產生於所被並聯的二個天線電路之構成。亦即 ，將電容性的外側天線電路13a設爲並列電路來對電感性 的內側天線電路13b連接之構成，至少需要二個的天線電 路。但，即使天線電路爲一個時，也可使循環電流產生於 • 天線電路。 圖16是表示往本發明的第2實施形態的電感耦合電 漿處理裝置所使用的高頻天線之給電電路的一例電路圖。 如圖16所示，第2實施形態的電感耦合電漿處理裝 置與第1實施形態的電感耦合電漿處理裝置不同的是在對 一個的電感性天線電路並聯的電路中未具備天線的點。高 頻天線13是藉由：被連接於整合器14與接地點之間的天 線電路13c、及與天線電路13c並聯的並列可變電容器70 ® 所構成。 圖17是槪略顯示使用於第2實施形態的電感耦合電 漿處理裝置的高頻天線的一例立體圖。 因爲第2實施形態沒有像第1實施形態那樣的外側天 線電路13a及內側天線電路13b，所以可只以一個的天線 電路13c來構成。因此，如圖17所示，高頻天線13例如 可以一個的平面線圈Lc來構成。在圖17中雖是顯示以一 個的導電構件來構成的例子作爲平面線圈Lc的一例，但 平面線圈Lc亦可以分岐的複數個導電構件來構成。 -29- 201026166 若根據第2實施形態，則會例如以並列可變電容器70 的抗:與天線電路13c的阻抗形成逆相位的方式，調節並 列可變電容器70的電容。藉此，如圖18A或圖18B所示 ’流至天線電路l3c的天線電流u的方向與流至並列可 變電容器70的電容器電流Ic的方向形成相反，可使產生 與第1實施形態同樣的循環電流。因此，可取得與第i實 施形態同樣的優點。 圖19A是表示在整合器14使用逆l型整合電路時的 ❹ 基本構成圖’圖19B是表示使用逆L型整合電路時往圖 I6所示的高頻天線之給電電路的一電路例的電路圖。Further, for example, when searching for the capacitance of the variable capacitor VC, the interval D is searched for in the search. Q is such that the 'inductively coupled plasma' is not formed in the region D including the side of the parallel resonance point B, or the processing is not performed, so that the impedance integration using the integrator 14 can be easily made, and the process with higher power efficiency can be obtained. Further, 'inductively coupled plasma is not generated in the region D including the parallel resonance point B' or is not processed, and the capacitor c which is a fixed capacitor is not limited to the variable capacitor VC'. That is, when the capacitor C of the fixed capacitance is used, the 値 of the capacitor ^ is set to the impedance of the high-frequency antenna 13 (the total of the antennas), and the range of the above-mentioned region 不会 is not formed, that is, -22-201026166. Next, a description will be given of a processing operation when the plasma glass etching process is performed on the LCD glass substrate G by using the inductively coupled plasma etching apparatus configured as described above. First, when the gate valve 27 is opened, the substrate G is carried into the processing chamber 4 by a transport mechanism (not shown), and after being placed on the mounting surface of the mounting table 23, the electrostatic chuck (not shown) The substrate G φ is fixed to the mounting table 23 . Next, in the processing chamber 4, the processing gas is discharged from the gas discharge hole 12a of the shower housing 11 into the processing chamber 4 from the processing gas supply system 20, and the processing chamber 4 is placed in the processing chamber 4 via the exhaust pipe 31 by the exhaust device 30. Vacuum evacuation is performed to maintain the processing chamber at a pressure of, for example, about 0.66 to 26.6 Pa. In the cooling space on the back side of the substrate G, He gas is supplied as a heat transfer gas via the He gas path 42 and the He gas flow path 41 in order to avoid temperature rise or temperature change of the substrate G. In this case, in the past, He gas was directly supplied to the He gas path 42 from the gas cylinder, and the pressure was controlled by the pressure control valve. However, as the size of the substrate was increased, the distance of the gas path became longer, and the gas was long. The space capacity of the full space becomes large, and the time from the supply of gas to the completion of the pressure regulation becomes long. However, since the groove 47 of He gas is provided on the downstream side of the pressure control valve 44, the He gas is prefilled here, so The pressure is regulated in a very short time. In other words, when He gas of the heat transfer gas is supplied to the back surface of the substrate G, first, He gas is supplied from the groove 47, and the shortage is insufficiently compensated by the route from the conventional gas cylinder, whereby the pressure close to the set pressure can be instantaneously obtained. The amount of gas that is compensated by the pressure control -23-201026166 valve is also small, so the pressure regulation can be completed in a very short time. In this case, it is preferable that the gas pressure to be filled in the tank 47 is equal to the capacity at which the cooling space is filled at the set pressure, and the capacity of the tank 47 is set to an optimum pressure. Further, it is preferable that the operation of charging the gas in the groove 47 is performed at the time of transporting the substrate G or the like without affecting the substrate processing time. Next, a high frequency of, for example, 13.56 MHz is applied from the high-frequency power source 15 to the high-frequency antenna 13, whereby an inductive electric field of uniformity φ is formed in the processing chamber 4 via the dielectric wall 2. The processing gas is plasma-formed in the processing chamber 4 by the thus formed inductive electric field to generate a high-density inductively coupled plasma. In this case, the configuration of the radio-frequency antenna 13 includes the outer antenna circuit 13a in which the antenna wires are closely arranged on the outer portion, and the inner antenna circuit 13b in which the antenna wires are closely arranged on the inner portion. Further, in the outer antenna circuit 13a, for example, as shown in Fig. 1, the variable capacitor VC is connected, so that the impedance of the outer antenna circuit 13a can be adjusted. The adjustment of the variable capacitor VC is as described above. In this case, the optimal plasma density distribution is grasped for each application, and the position of the variable capacitor VC that can obtain the plasma density distribution is set in advance in the memory unit 52, whereby the control unit 50 can be used for each application. The position of the optimum variable capacitor VC is selected for plasma processing. In this way, the plasma density distribution can be controlled by the impedance control of the variable capacitor VC, so that it is not necessary to replace the antenna, the labor of replacing the antenna, or the cost of preparing the antenna for each application. Further, the ultrafine -24 - 201026166 current control is performed by the position adjustment of the variable capacitor VC, and the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b are set to be opposite to each other. Thereby, the optimum plasma electron density distribution can be obtained according to the application, and the plasma electrons can be formed at a higher density than when the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b are in the same phase. . Further, instead of using a plurality of high-frequency power sources to distribute the power of the high-frequency power, the impedance adjustment is performed only by the variable capacitor VC, and current control and phase of the outer φ side antenna circuit 13a and the inner antenna circuit 13b are performed. Since it is controlled, there is no possibility that the device is large in scale, the cost is high, or the power cost is high, and the control accuracy can be higher than when a plurality of high-frequency power sources are used to distribute power. Next, several circuit examples of the high frequency antenna 13 will be described. 13A to 13D are circuit diagrams showing examples of the first to fourth circuits of the radio-frequency antenna 13. As shown in Fig. 13A, the high frequency antenna 13-1 of the first circuit example is both the outer antenna circuit 13a and the inner antenna circuit 13b which are connected in parallel with each other, and is at one end of the integrator 14 and the plane lines 圏La and Lb. The variable capacitors VCa and VCb are connected in between. The other ends of the planar coils La and Lb are commonly connected and connected to a common ground point GND. In the first circuit example, the capacitances of the variable capacitors VCa and VCb are adjusted, and the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b are set to be opposite to each other. Thereby, power efficiency can be improved. In addition, since the variable capacitors VCa and VCb are adjustable, the capacitances of the variable capacitors VCa and VCb can be made to correspond to the application, so that the optimum shape can be formed from -25 to 201026166, for example, inner, outer, and uniform. The optimum plasma electron density distribution is controlled in a power efficient manner. Further, when the film forming process such as CVD is performed, the variable capacitor VC a or VCb can be searched for in the film forming process, and for example, the capacitance of the variable capacitor VCa provided in the outer antenna circuit 13a can be searched for in the film forming process. The film thickness of the film to be formed can be uniform, and the plasma electron density distribution can be searched and controlled between internal density, external density, and uniformity in the film formation process. In this case, the impedance of the outer antenna circuit 13a and the impedance @ of the inner antenna circuit 13b are first set to be opposite to each other, so that the power plasma density distribution can be searched for internal, external, and uniform power efficiency. . As shown in FIG. 13B, the high frequency antenna 13-2 of the second circuit example is compared with the high frequency antenna 13-1 of the first circuit example, except that the variable capacitor VCa or VCb is connected to the common ground point GND and the planar coil. Between the other ends of La and Lb, one ends of the planar coils La and Lb are commonly connected to the integrator 14. In the second circuit example, the electric capacitances of the variable capacitors VCa and VCb are also adjusted, and the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b are set to be opposite to each other. In the second circuit example as described above, the same advantages as the first circuit example can be obtained. As shown in Fig. 13C, the high frequency antenna 13-3 of the third circuit example is provided with the variable capacitor Va only in the outer antenna circuit 1 3 a as compared with the high frequency antenna 13 3 of the first circuit example. The third circuit example is the same circuit as the high frequency antenna shown in Fig. 11. -26- 201026166 In the third circuit example, under the capacitance of the variable capacitor VCa, the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b are set to be opposite to each other. In the third circuit example as described above, the same advantages as the first and second circuit examples can be obtained. As shown in Fig. 13D, the high frequency antenna 13-4 of the fourth circuit example is compared with the high frequency antenna 13-3 of the third circuit example, except that the variable capacitor φ VCa is connected to the common ground point GND and the planar coil La. Between the other ends of the 'planar coil La and one end of the planar coil Lb are commonly connected to the integrator 14°. In the fourth circuit example, also under the capacitance of the variable capacitor VCa', the impedance of the outer antenna circuit 13a and the inner side are The impedance of the antenna circuit 13b is set to be opposite to each other. In the fourth circuit example as described above, the same advantages as the first to third circuit examples can be obtained. Further, in the first to fourth circuit examples, the capacitor provided in the outer antenna circuit 13a and/or the inner antenna circuit 13b is a variable capacitor having an adjustable capacitance, but may be a capacitor having a fixed capacitance. The capacitance of the capacitor in this case is set so that the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b can form opposite phases to each other. When the capacitor having such a fixed capacitance is used, it is also possible to make the plasma electron density generated in the processing chamber higher than the high frequency antenna which does not reverse the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b. Enhance 'inductively coupled plasma with a more power efficient HF antenna -27- 201026166 processing unit. In the inductively coupled plasma processing apparatus according to the first embodiment of the present invention, the impedance of the outer antenna circuit 13a and the impedance of the inner antenna circuit 13b are reversed. Therefore, during the generation of the inductively coupled plasma, the phase of the current flowing to the outer antenna circuit 13a and the phase of the current flowing to the inner antenna circuit 13b form opposite phases to each other. When the phases of the currents are opposite to each other, when the planar coils La and Lb are used for both the outer antenna circuit 13a and the inner antenna circuit 13b, as shown in FIG. 14, the direction of the current lout flowing outside the planar coil La is The direction of the inner current Iin flowing in the planar coil Lb is reversed. Therefore, the direction of the outer magnetic field created by the outer current lout and the direction of the inner magnetic field formed by the inner current Hn are reversed, and the outer magnetic field and the inner magnetic field cancel each other, and the magnetic field introduced into the processing chamber becomes weak. . In order to prevent such an outer magnetic field and an inner magnetic field from canceling each other, as shown in Fig. 15, the planar coil La of the outer antenna circuit 13a and the planar coil Lb of the inner Q antenna circuit 13b may be reversed from each other. Once the planar coils La and Lb are reversed, the direction of the outer current lout is opposite to the direction of the inner current Iin, but the appearance is such that the direction of the outer current lout is the same as the direction of the inner current Iin. In the same direction. Therefore, the direction of the outer magnetic field and the direction of the inner magnetic field are the same, which prevents the outer magnetic field and the inner magnetic field from canceling each other. (Second Embodiment) -28-201026166 The inductively coupled plasma processing apparatus according to the first embodiment is one in which the impedance of one antenna circuit and the other antenna circuit are in the outer antenna circuit 13a and the inner antenna circuit 13b which are connected in parallel with each other. The impedance is set to the reverse phase, and the circulating current is generated by the two antenna circuits connected in parallel. That is, the configuration in which the capacitive outer antenna circuit 13a is a parallel circuit and the inductive inner antenna circuit 13b is connected requires at least two antenna circuits. However, even if the antenna circuit is one, the circulating current can be generated in the antenna circuit. Fig. 16 is a circuit diagram showing an example of a power feeding circuit of a radio-frequency antenna used in the inductively coupled plasma processing apparatus according to the second embodiment of the present invention. As shown in Fig. 16, the inductively coupled plasma processing apparatus according to the second embodiment differs from the inductively coupled plasma processing apparatus according to the first embodiment in that a circuit in which one of the inductive antenna circuits is connected in parallel does not have an antenna. The high-frequency antenna 13 is composed of an antenna circuit 13c connected between the integrator 14 and the grounding point, and a parallel variable capacitor 70® connected in parallel with the antenna circuit 13c. Fig. 17 is a perspective view showing an example of a high frequency antenna used in the inductively coupled plasma processing apparatus of the second embodiment. Since the second embodiment does not have the outer antenna circuit 13a and the inner antenna circuit 13b as in the first embodiment, it can be configured by only one antenna circuit 13c. Therefore, as shown in Fig. 17, the radio-frequency antenna 13 can be constituted by, for example, one planar coil Lc. Although an example in which one conductive member is used as an example of the planar coil Lc is shown in Fig. 17, the planar coil Lc may be formed by a plurality of conductive members. -29-201026166 According to the second embodiment, the capacitance of the parallel variable capacitor 70 is adjusted, for example, such that the impedance of the parallel variable capacitor 70 is opposite to the impedance of the antenna circuit 13c. Thereby, as shown in Fig. 18A or Fig. 18B, the direction of the antenna current u flowing to the antenna circuit 13c is opposite to the direction of the capacitor current Ic flowing to the parallel variable capacitor 70, and the same as in the first embodiment can be produced. Circulating current. Therefore, the same advantages as the i-th embodiment can be obtained. Fig. 19A is a diagram showing a basic configuration of the power supply circuit of the high frequency antenna shown in Fig. I6 when the reverse L type integrated circuit is used. .
如圖19A所示，逆l型整合電路是以：將一端連接至 高頻電源’將另一端連接至負荷的匹配用可變電抗元件（ XMatch) 80、及將一端連接至匹配用可變電抗元件（xMatch )80與高頻電源15的相互連接點，將另一端接地的調諧 用可變電抗元件（XTune ) 8 1所構成。在此所謂電抗元件 是線圏或電容器、或該等複合的元件。 U 在圖19B是圖19A的負荷13會成爲高頻天線，此高 頻天線是藉由：天線電路13c (包含將一端連接至匹配用 可變電抗元件（XMateh ) 80的線圈Lc、及將一方的電極連 接至線圈Lc的另一端，將另一方的電極接地的終端電容 器C)、及將一方的電極連接至匹配用可變電抗元件（ XMatch ) 80與線圈Lc的一端的相互連接點，將另一方的 電極接地的並列可變電容器70所構成。 圖20是表示圖19所示的並列可變電容器70的VC位 -30- 201026166 置與阻抗的關係’同樣圖21是表示並列可變電容器70的 VC位置與流至匹配用可變電抗元件（xMateh) 8〇的電流 (Match電流）、流至調諧用可變電抗元件（xTune ) 81的 電流（Tun e電流）、流至並列可變電容器7 〇的電流（並 列VC電流）、及流至終端電容器c的電流（終端C電流 )的關係。 如圖20所示，可知在圖19所示的電路例中，可變電 φ 容器70的VC位置約爲60%時產生並列共振。又，如圖 2 1所示，在並列共振點、及並列共振點附近，流至匹配用 可變電抗元件（XMat(：h ) 80的電流（Match電流）、及流 至調諧用可變電抗元件（XTune) 81的電流（Tune電流） 是幾乎零。 Η 22在第2實施形態的電感耦合電漿處理裝 置的處理室內所載置的被處理基板上的電漿電子密度的分 布’圖23是表示第2實施形態的電感耦合電漿處理裝置 β 之灰化速率。在圖22及圖23中一倂記載未持有並列可變 電容器70的型態的電感耦合電漿處理裝置時作爲參考例 〇 如圖22所示’若锒據第2實施形態的電感耦合電漿 處理裝置’則將闻頻電力RF設爲相同時，相較於參考例 的電感稱合電獎處理裝觼，可取得更高的電漿電子密度。 又’如圖2 3所示’若根據第2實施形態的電感耦合 電獎處理裝置’則將高頰電力RF設爲相同時，相較於參 考例的電感親合電槳處键裝置，灰化速率、及灰化的面內 201026166 均一性也會提升。 所謂高頻電力RF爲相同時，可取得更高的電漿電子 密度’是第2實施形態的電感耦合電漿處理裝置相較於參 考例’能量效率會提升。能量效率的提升是例如可取得其 次那樣的優點。 最近’爲了處理的效率化等，而基板例如FPD用的玻 璃基板有顯著大型化的趨勢，生產一片超過lm者。因此 ’用以對玻璃基板實施處理的電感耦合電漿處理裝置也大 參 型化，隔開天線室與處理室的電介體壁也大型化。一旦電 介體壁大型化，則其厚度也不得不增厚，使能夠具有承受 處理室的內外壓力差或自重等之充分的強度，但若電介體 壁變厚，則高頻天線會遠離處理室，能釐效率變差。 相對的，例如在日本特開2001 -28299號公報中揭示 :使構成淋浴頭的金屬製淋浴框體具有支撐樑的功能，藉 由此支撐樑來支撐電介體壁，防止電介體壁的彎曲，藉此 可使電介體壁變薄，進而使能量效率提升，及使淋浴框體 @ 與高頻天線正交’極力防止來自高頻天線的電感電場被支 撐樑阻礙，進而防止能量效率的降低。 然而，一旦電感耦合電漿處理裝置更大型化，則像上 述特開200 1 -28299號公報所記載的技術那樣，藉由支撐 樑來支撐電介體壁，使電介體壁變薄的情形也會有限，需 要更進一步的能量效率的提升。 針對於如此的情事，第2實施形態的電感耦合電漿處 理裝置是如圖22所示般能量效率提升，因此亦有利於電 •32· 201026166 感耦合電漿處理裝置的更大型化。 實施形態中所說 點、或除了並列 域，在處理室內 的區域的定義是 另外’在第2實施形態中也是如第ι 明那樣，亦可不使用並列共振的並列共振 共振點以外’不使用並列共振點附近的區 生成電感耦合電漿。有關並列共振點附近 如第1實施形態所說明般。 φ (第3實施形態） 在上述第2實施形態中，如 ^ 如參照圖21來說明般，在 並列共振點及並列共振點附近是沪 虹是流至逆L型整合電路的調 諧用可變電抗元件（xTune) 81, TUnej 81的電流（Tune電流）幾乎 爲零。因此’在使用並列Α垢墮上 J /、振點及並列共振點附近來令電 感耦合電漿處理裝置動作時，力 ^ 如圖24A所示般不需要調諧 用可變電抗元件（xTune) 81。 在此，去掉調諧用可變電抗元件（χτ…）81的圖 ❿24Α的電路，若將線圈Le與終端電容器c的部分想成負 荷則如目24B所示’與使用將並列可變電容器設爲 cxTune) 81 @ τ 型整合電路時的基 本構成圖相同。 Τ型整合電;路是以：將一方連接至高頻電源的匹配用 可變電抗兀件（XMateh) 8〇、及將一方連接至匹配用可變 電抗兀件（XMateh) 80的另—方，將另一方接地的調諧用 可變電抗元件（XTune) 8〗所構成。 圖25是表不往第3實施形態的電感耦合電漿處理裝 -33- 201026166 置所使用的高頻天線之給電電路的一例電路圖。 如圖25所示，第3實施形態的給電電路與第2實施 形態的給電電路不同的是將整合器14從逆L型整合電路 置換成T型整合電路，且在使電感耦合電漿處理裝置動作 時，以循環電流能夠流動於調諧用可變電抗元件（XTune ) 81與天線電路13c之間的方式進行阻抗整合。 高頻天線13是由天線電路13c所構成，天線電路13c 包含：將一端連接至匹配用可變電抗元件（XMateh) 80與 . 調諧用可變電抗元件（XTUne) 81的相互連接點的線圈Lc 、及將一方的電極連接至線圈Lc的另一端，將另一方的 電極接地的終端電容器C。 在進行電漿處理時，是以能夠在調諧用可變電抗元件 (XTune) 81與天線電路13c之間產生循環電流的方式動 作。具體的一例是以調諧用可變電抗元件（XTune) 81的 阻抗能夠與天線電路13c的阻抗形成逆相位的方式調節調 諧用可變電抗元件（XTune ) 8 1。 ❹ 圖26是表示第3實施形態的電感耦合電漿處理裝置 的處理室內所載置的被處理基板上的電漿電子密度的分布 ，圖27是表示第3實施形態的電感耦合電漿處理裝置之 灰化速率。在圖26及圖27中是一倂記載未具有並列可變 電容器70的型態的電感耦合電漿處理裝置及第2實施形 態時作爲參考例。 如圖2 6所示，在第3實施形態的電感耦合電漿處理 裝置中，也是將高頻電力RF設爲相同時’相較於參考例 -34- 201026166 的電感親合電獎處理裝置，可取得更高且與第2實施形態 同等以上的電漿電子密度。 又’如圖27所示’若根據第3實施形態的電感耦合 電漿處理裝置，則在將高頻電力RF設爲相同時，相較於 參考例的電感耦合電漿處理裝置，灰化速率及灰化的面內 均一性也會提升。而且’灰化速率是與第2實施形態幾乎 同等的速率’且面內均一性可取得與第2實施形態同等以 〇 上的均一性。 另外’在第3實施形態中也是如第1實施形態中所說 明那樣，亦可不使用並列共振的並列共振點、或除了並列 共振點以外’不使用並列共振點附近的區域，在處理室內 生成電感耦合電漿。有關並列共振點附近的區域的定義是 如第1實施形態所說明般。 以上’若根據本發明的實施形態的電感耦合電漿處理 裝置’則可提供一種功率效率更佳的電感耦合電漿處理裝 〇 置及電感耦合電漿處理方法。 另外，本發明並非限於上述實施形態，亦可實施各種 的變形可能。 例如高頻天線的構造並非限於上述構造，只有是具有 同樣機能的構造，便可採用各種的構造。 又，上述實施形態是將高頻天線分成：在外側形成電 漿的外側天線部、及在內側形成電漿的內側天線部，但並 非一定分成外側及內側，亦可採用各種的分法。 又’並非限於分成形成電漿的位置不同的天線部時， -35- 201026166 亦可分成電漿分布特性不同的天線部。 又，上述實施形態是顯示有關將高頻天線分成外側與 內側的2個時，但亦可分成3個以上。例如，可舉分成外 側部分與中央部分及該等的中間部分等3個。 又，用以調整阻抗的手段爲設置電容器、及可變電容 器，但亦可使用線圈、可變線圈等其他的阻抗調整手段。 又，上述實施系是顯示灰化裝置作爲電感耦合電漿處 理裝置的一例，但並非限於灰化裝置，亦可使用於蝕刻或 @ CVD成膜等其他的電漿處理裝置。 又，被處理基板爲使用FPD基板，但本發明並非限於 此，亦可適用於處理半導體晶圓等其他的基板時。 【圖式簡單說明】 圖1是表示本發明的第1實施形態的電感耦合電漿處 理裝置的剖面圖。 圖2是表示使用於第1實施形態的電感耦合電漿處理 裝置的高頻天線的平面圖。 圖3是表示往第1實施形態的電感耦合電漿處理裝置 所具備的高頻天線之給電電路的一例圖。 圖4是表示給電電路之一電路例的電路圖。 圖5是表示阻抗之電容器C的電容依存性的圖。 圖6是表示外側電流及內側電流之電容器C的電容依 存性的圖。 圖7是表示外側電流及內側電流之電容器C的電容依 -36- 201026166 存性（絕對値顯示）的圖。 圖8是表示流動於第1實施形態的電感耦合電漿處理 裝置所具備的高頻天線的電流圖。 圖9是表示流動於參考例的電感耦合電漿處理裝置所 具備的高頻天線的電流圖。 圖1〇是表示在處理室內所載置的被處理基板上的電 漿電子密度的分布圖。 Φ 圖11是表示給電電路的其他電路例的電路圖。 圖12是表示阻抗之電容器C的電容依存性的圖。 圖13A〜圖13D是表示高頻天線13的第1電路例〜 第4電路例的電路圖。 圖1 4是表示外側電流及內側電流的方向與外側磁場 及內側磁場的關係立體圖。 圖1 5是表示外側電流及內側電流的方向與外側磁場 及內側磁場的關係立體圖。 Ο 圖16是表示往使用於第2實施形態的電感耦合電獎 處理裝置的高頻天線之給電電路的一例電路圖。 圖17是槪略顯示使用於第2實施形態的電感稱合電 漿處理裝置的高頻天線之一例的立體圖。 圖18是表示流動於第2實施形態的電感親合電禁處 理裝置所具備的高頻天線的電流圖。 圖19是表示往圖16所示的高頻天線之給電電路的一 電路例的電路圖。 圖20是表示圖19所示的並列可變電容器的VC位置 -37- 201026166 與阻抗的關係圖。 圖21是表示圖19所示的並列可變電容器的VC位置 與流動於匹配用可變電容器的電流、流動於調諧用可變電 容器的電流、流動於並列可變電容器的電流、及流動於終 端電容器的電流的關係圖。 圖22是表示在處理室內所載置的被處理基板上的電 漿電子密度的分布圖。 圖23是表示第2實施形態的電感耦合電漿處理裝置 馨 之灰化速率的圖。 圖24是說明第3實施形態的電路圖。 圖25是表示往使用於第3實施形態的電感耦合電漿 處理裝置的高頻天線之給電電路的一例電路圖。 圖26是表示在處理室內所載置的被處理基板上的電 漿電子密度的分布圖。 圖27是表示第3實施形態的電感耦合電漿處理裝置 之灰化速率的圖。 _ 【主要元件符號說明】 1 :本體容器 2:電介體壁（電介體構件） 3 :天線室 4 :處理室 13 :高頻天線 1 3 a :外側天線電路 -38- 201026166 13b :內側天線電路 14 :整合器 1 5 :高頻電源 1 6 a，1 6 b :給電構件 20 :處理氣體供給系 C :電容器 VC、VCa、VCb:可變電容器 瘳 2 3 ·載置台 3 0 :排氣裝置 5 0 :控制部 5 1 :使用者介面 52 :記憶部 6 1 a :外側天線電路 6 1 b :內側天線電路 G :基板 ® 70 :並列可變電容器 80:匹配用可變電抗元件 81 :調諧用可變電抗元件（XTune) -39-As shown in FIG. 19A, the inverse type I integrated circuit is a variable reactance element (XMatch) 80 that connects one end to a high frequency power source 'connecting the other end to a load, and connects one end to a matching variable. The junction of the reactance element (xMatch) 80 and the high-frequency power source 15 is connected to the tuning variable reactance element (XTune) 81 which is grounded at the other end. Here, the reactive element is a coil or a capacitor, or a composite element. In Fig. 19B, the load 13 of Fig. 19A becomes a high frequency antenna, and the high frequency antenna is composed of an antenna circuit 13c (including a coil Lc connecting one end to the matching variable reactance element (XMateh) 80, and One electrode is connected to the other end of the coil Lc, the other capacitor is grounded to the terminal capacitor C), and one of the electrodes is connected to the mutual connection point of the matching variable reactance element (XMatch) 80 and one end of the coil Lc. A parallel variable capacitor 70 that grounds the other electrode is constructed. Fig. 20 is a view showing the relationship between the VC bit -30-201026166 of the parallel variable capacitor 70 shown in Fig. 19 and the impedance. Similarly, Fig. 21 shows the VC position of the parallel variable capacitor 70 and the variable reactance element for matching. (xMateh) 8 〇 current (Match current), current flowing to the tuning variable reactance element (xTune) 81 (Tun e current), current flowing to the parallel variable capacitor 7 并 (parallel VC current), and The relationship of the current (terminal C current) flowing to the terminal capacitor c. As shown in Fig. 20, in the circuit example shown in Fig. 19, when the VC position of the variable electric φ container 70 is about 60%, parallel resonance occurs. Further, as shown in Fig. 21, in the vicinity of the parallel resonance point and the parallel resonance point, the current flows to the matching variable reactance element (XMat(:h) 80 (Match current) and flows to the tuning variable The current (Tune current) of the reactance element (XTune) 81 is almost zero. Η 22 The distribution of plasma electron density on the substrate to be processed placed in the processing chamber of the inductively coupled plasma processing apparatus of the second embodiment' Fig. 23 is a view showing the ashing rate of the inductively coupled plasma processing apparatus β of the second embodiment. In Fig. 22 and Fig. 23, the inductively coupled plasma processing apparatus of the type in which the parallel variable capacitor 70 is not held is described. As a reference example, as shown in FIG. 22, in the case of the inductively coupled plasma processing apparatus according to the second embodiment, when the frequency power RF is set to be the same, the inductance is compared with the reference example. A higher plasma electron density can be obtained. In the case of the inductively coupled charge processing device according to the second embodiment, the high buccal power RF is set to be the same as in the reference example. Inductive affinity of the paddle device, ashing rate And the uniformity of the in-plane 201026166 is also increased. When the high-frequency power RF is the same, a higher plasma electron density can be obtained. The inductively coupled plasma processing apparatus of the second embodiment is compared with the reference example. The energy efficiency is improved. For example, in order to improve the efficiency of processing, the glass substrate for a substrate such as FPD has a tendency to be significantly larger, and the production is more than one lm. The inductively coupled plasma processing apparatus for processing the glass substrate is also largely parametric, and the dielectric wall separating the antenna chamber and the processing chamber is also enlarged. Once the dielectric wall is enlarged, the thickness thereof has to be increased. The thickening makes it possible to have sufficient strength to withstand the pressure difference between the inside and outside of the processing chamber or the dead weight. However, if the dielectric wall is thickened, the high-frequency antenna will be far away from the processing chamber, and the efficiency can be deteriorated. Japanese Laid-Open Patent Publication No. 2001-28299 discloses that a metal shower frame constituting a shower head has a function of supporting a beam, thereby supporting a beam to support a dielectric wall and preventing dielectric The bending of the wall, thereby making the wall of the dielectric thin, thereby improving the energy efficiency, and making the shower frame @ orthogonal to the high-frequency antenna, to prevent the inductive electric field from the high-frequency antenna from being blocked by the supporting beam, thereby preventing The energy efficiency is reduced. However, as the inductively coupled plasma processing apparatus is further enlarged, the dielectric wall is supported by the support beam as in the technique described in the above-mentioned JP-A No. 200 1-28299, and the dielectric body is made. The thinning of the wall is also limited, and further energy efficiency improvement is required. In response to such a situation, the inductively coupled plasma processing apparatus of the second embodiment has an energy efficiency improvement as shown in FIG. 22, and thus is also advantageous. Electricity • 32· 201026166 The size of the inductively coupled plasma processing unit is larger. The point in the embodiment or the area in the processing chamber other than the parallel field is defined as 'in the second embodiment, as in the case of the first embodiment, and the parallel resonance point other than the parallel resonance is not used. An area near the resonance point generates an inductively coupled plasma. The vicinity of the parallel resonance point is as described in the first embodiment. φ (Third Embodiment) In the second embodiment, as described with reference to Fig. 21, in the vicinity of the parallel resonance point and the parallel resonance point, Huhong is a variable tuning for the inverse L-type integrated circuit. The current (Tune current) of the reactance element (xTune) 81, TUnej 81 is almost zero. Therefore, when the inductively coupled plasma processing device is operated near the J /, the vibration point, and the parallel resonance point, the force does not require the variable reactance element (xTune) for tuning as shown in Fig. 24A. 81. Here, the circuit of Fig. 24A of the tuning reactive element (χτ...) 81 is removed, and if the part of the coil Le and the terminal capacitor c is considered to be loaded, as shown in Fig. 24B, the parallel variable capacitor is used. The basic configuration diagram for the cxTune) 81 @ τ type integrated circuit is the same. Τ-type integrated power; the road is: a matching variable reactance element (XMateh) 8 连接 connecting one side to the high-frequency power supply, and another one connecting the matching variable reactance element (XMateh) 80 - The other side is composed of a tuning reactive element (XTune) 8 that is grounded to the other side. Fig. 25 is a circuit diagram showing an example of a power feeding circuit of a radio-frequency antenna used in the inductively coupled plasma processing apparatus - 33 - 201026166 of the third embodiment. As shown in FIG. 25, the power supply circuit of the third embodiment differs from the power supply circuit of the second embodiment in that the integrator 14 is replaced by an inverse L-type integrated circuit into a T-type integrated circuit, and the inductively coupled plasma processing device is provided. During the operation, impedance integration can be performed in such a manner that a circulating current can flow between the tuning variable reactance element (XTune) 81 and the antenna circuit 13c. The high frequency antenna 13 is constituted by an antenna circuit 13c, and the antenna circuit 13c includes one end connected to an interconnection point of a matching variable reactance element (XMateh) 80 and a tuning variable reactance element (XTUne) 81. The coil Lc and a terminal capacitor C that connects one electrode to the other end of the coil Lc and grounds the other electrode. When the plasma processing is performed, it is possible to operate such that a circulating current can be generated between the tuning variable reactance element (XTune) 81 and the antenna circuit 13c. In a specific example, the tuning variable reactance element (XTune) 8 1 is adjusted so that the impedance of the tuning variable reactance element (XTune) 81 can be reversed with the impedance of the antenna circuit 13c. FIG. 26 is a view showing a distribution of plasma electron density on a substrate to be processed placed in a processing chamber of the inductively coupled plasma processing apparatus according to the third embodiment, and FIG. 27 is a view showing an inductively coupled plasma processing apparatus according to a third embodiment. Ashing rate. In Fig. 26 and Fig. 27, a description will be given of a case where the inductively coupled plasma processing apparatus of the type in which the parallel variable capacitor 70 is not provided and the second embodiment are described. As shown in FIG. 26, in the inductively coupled plasma processing apparatus of the third embodiment, the inductive affinity electric charge processing apparatus of the reference example-34-201026166 is also used when the high-frequency power RF is the same. A plasma electron density higher than that of the second embodiment can be obtained. In the inductively coupled plasma processing apparatus according to the third embodiment, when the high-frequency power RF is the same, the ashing rate is higher than that of the inductively coupled plasma processing apparatus of the reference example. And the in-plane uniformity of ashing will also increase. Further, the 'ashing rate is a rate almost the same as that of the second embodiment', and the in-plane uniformity can be achieved in the same manner as in the second embodiment. In the third embodiment, as described in the first embodiment, it is also possible to generate an inductance in the processing chamber without using a parallel resonance point of parallel resonance or a region in the vicinity of the parallel resonance point except for the parallel resonance point. Coupled plasma. The definition of the region in the vicinity of the parallel resonance point is as described in the first embodiment. The above-described inductively coupled plasma processing apparatus according to an embodiment of the present invention can provide an inductively coupled plasma processing apparatus and an inductively coupled plasma processing method which are more power efficient. Further, the present invention is not limited to the above embodiment, and various modifications may be implemented. For example, the configuration of the radio-frequency antenna is not limited to the above configuration, and various configurations can be employed only for the configuration having the same function. Further, in the above embodiment, the radio-frequency antenna is divided into an outer antenna portion in which plasma is formed on the outer side and an inner antenna portion in which plasma is formed on the inner side. However, it is not necessarily divided into the outer side and the inner side, and various division methods may be employed. Further, when it is not limited to the antenna portion having different positions at which plasma is formed, -35-201026166 may be divided into antenna portions having different plasma distribution characteristics. Further, in the above embodiment, when the high frequency antenna is divided into two outer sides and inner sides, it may be divided into three or more. For example, it may be divided into three parts, such as an outer part, a center part, and these intermediate parts. Further, the means for adjusting the impedance is to provide a capacitor and a variable capacitor, but other impedance adjusting means such as a coil or a variable coil may be used. Further, the above embodiment is an example in which the ashing apparatus is shown as an inductively coupled plasma processing apparatus. However, the ashing apparatus is not limited to the ashing apparatus, and may be used in other plasma processing apparatuses such as etching or @CVD film formation. Further, the substrate to be processed is an FPD substrate. However, the present invention is not limited thereto, and may be applied to other substrates such as semiconductor wafers. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention. Fig. 2 is a plan view showing a high frequency antenna used in the inductively coupled plasma processing apparatus of the first embodiment. Fig. 3 is a view showing an example of a power feeding circuit of a radio-frequency antenna provided in the inductively coupled plasma processing apparatus according to the first embodiment. Fig. 4 is a circuit diagram showing an example of a circuit of a power feeding circuit. FIG. 5 is a graph showing the capacitance dependence of the capacitor C of the impedance. Fig. 6 is a graph showing the capacitance dependence of the capacitor C of the outside current and the inside current. Fig. 7 is a graph showing the capacitance of the capacitor C of the outside current and the inside current in accordance with the -36-201026166 (absolute 値 display). Fig. 8 is a current diagram showing a high-frequency antenna provided in the inductively coupled plasma processing apparatus of the first embodiment. Fig. 9 is a current diagram showing a high-frequency antenna provided in the inductively coupled plasma processing apparatus of the reference example. Fig. 1A is a distribution diagram showing the electron density of the plasma on the substrate to be processed placed in the processing chamber. Φ Fig. 11 is a circuit diagram showing another example of a circuit of the power feeding circuit. FIG. 12 is a view showing the capacitance dependence of the capacitor C of the impedance. 13A to 13D are circuit diagrams showing examples of the first to fourth circuits of the radio-frequency antenna 13. Fig. 14 is a perspective view showing the relationship between the direction of the outside current and the inside current, and the outside magnetic field and the inside magnetic field. Fig. 15 is a perspective view showing the relationship between the direction of the outside current and the inside current, and the outside magnetic field and the inside magnetic field. Fig. 16 is a circuit diagram showing an example of a power feeding circuit of a radio-frequency antenna used in the inductively coupled credit processing apparatus of the second embodiment. Fig. 17 is a perspective view schematically showing an example of a high frequency antenna used in the inductor-bonded plasma processing apparatus of the second embodiment. Fig. 18 is a current diagram showing a high-frequency antenna provided in the inductive affinity inconvenience processing device of the second embodiment. Fig. 19 is a circuit diagram showing an example of a circuit of a power feeding circuit of the radio-frequency antenna shown in Fig. 16. Fig. 20 is a view showing the relationship between the VC position -37 - 201026166 and the impedance of the parallel variable capacitor shown in Fig. 19. 21 is a view showing a VC position of the parallel variable capacitor shown in FIG. 19, a current flowing in the matching variable capacitor, a current flowing in the tuning variable capacitor, a current flowing in the parallel variable capacitor, and a flow in the terminal. A diagram of the current of the capacitor. Fig. 22 is a view showing the distribution of the electron density of the plasma on the substrate to be processed placed in the processing chamber. Fig. 23 is a view showing the ashing rate of the inductively coupled plasma processing apparatus of the second embodiment. Fig. 24 is a circuit diagram for explaining a third embodiment. Fig. 25 is a circuit diagram showing an example of a power feeding circuit of a radio-frequency antenna used in the inductively coupled plasma processing apparatus of the third embodiment. Fig. 26 is a view showing a distribution of plasma electron density on a substrate to be processed placed in a processing chamber. Fig. 27 is a view showing the ashing rate of the inductively coupled plasma processing apparatus of the third embodiment. _ [Main component symbol description] 1 : Main body container 2: Dielectric wall (dielectric member) 3 : Antenna chamber 4 : Processing chamber 13 : High-frequency antenna 1 3 a : External antenna circuit -38 - 201026166 13b : Inside Antenna circuit 14: Integrator 1 5 : High-frequency power supply 1 6 a, 1 6 b : Power supply member 20 : Process gas supply system C : Capacitor VC, VCa, VCb: Variable capacitor 瘳 2 3 · Mounting table 3 0 : Row Air device 50: Control unit 5 1 : User interface 52 : Memory unit 6 1 a : Outer antenna circuit 6 1 b : Inside antenna circuit G : Substrate ® 70 : Parallel variable capacitor 80 : Matching variable reactance element 81 : Variable reactance component for tuning (XTune) -39-