JP5878771B2 - Inductively coupled plasma processing method and inductively coupled plasma processing apparatus - Google Patents

Description

  The present invention relates to an inductively coupled plasma processing method and an inductively coupled plasma processing apparatus for performing inductively coupled plasma processing on a target substrate such as a glass substrate for manufacturing a flat panel display (FPD).

  In a flat panel display (FPD) manufacturing process such as a liquid crystal display device (LCD), there is a process of performing plasma processing such as plasma etching or film formation on a glass substrate. In order to perform such plasma processing Various plasma processing apparatuses such as a plasma etching apparatus and a plasma CVD apparatus are used. Conventionally, a capacitively coupled plasma processing apparatus has been widely used as a plasma processing apparatus. Recently, however, an inductively coupled plasma (ICP) has a great advantage that a high-density plasma can be obtained at a high vacuum level. Processing devices are attracting attention.

  In an inductively coupled plasma processing apparatus, a high frequency antenna is disposed above a dielectric window that forms the top wall of a processing container that accommodates a substrate to be processed, and a processing gas is supplied into the processing container and high frequency power is supplied to the high frequency antenna. By supplying, an inductive electric field is formed in the processing container through the dielectric window, inductively coupled plasma is generated by the inductive electric field, and a predetermined plasma process is performed on the substrate to be processed by the inductively coupled plasma. . As a high-frequency antenna, a spiral antenna having a spiral shape is often used.

  In an inductively coupled plasma processing apparatus using a planar annular antenna, plasma is generated in a space immediately below the planar antenna in the processing container. At that time, the plasma is generated in accordance with the electric field strength of the induction electric field at each position immediately below the antenna. Due to the distribution of the plasma density region and the low plasma density region, the pattern shape of the planar annular antenna is an important factor that determines the plasma density distribution. By adjusting the density of the planar annular antenna, the induction electric field is made uniform. And uniform plasma is generated.

  Therefore, an antenna unit having two annular antennas of an inner part and an outer part with an interval in the radial direction is provided, and the impedance values are adjusted to independently control the current values of these two annular antenna parts, There has been proposed a technique for controlling the density distribution of the inductively coupled plasma as a whole by controlling how the density distribution formed by diffusion of the plasma generated by the annular antenna portion is superimposed (Patent Document 1).

JP 2007-31182 A

  By the way, even if the inductively coupled plasma process using the antenna unit having two annular antennas of the inner part and the outer part is performed under a high pressure condition of 100 mTorr or more, the plasma is difficult to diffuse. Plasma that does not depend on the arrangement of the two annular antennas can be generated in a concentrated manner at a position where it is easy to maintain, and plasma with a desired density distribution can be maintained over the entire substrate by adjusting the antenna current. In some cases, a desired processing distribution, typically a uniform processing distribution, may not be obtained.

  In addition, even if the high pressure conditions are not used, it is difficult to obtain a desired plasma density distribution because the plasma generated by each antenna affects each other even if the current values of the two annular antenna parts are controlled independently. There is. Such a problem occurs not only in the case of having two annular antennas as in Patent Document 1, but generally in the case of having a plurality of spiral antennas.

  The present invention has been made in view of such circumstances, and inductive coupling capable of performing inductively coupled plasma processing with a desired processing distribution when performing inductively coupled plasma processing using a plurality of spiral antennas. It is an object of the present invention to provide a plasma processing method and an inductively coupled plasma processing apparatus.

In order to solve the above-described problem, in a first aspect of the present invention, a processing chamber that accommodates a substrate and performs plasma processing, a mounting table on which the substrate is mounted in the processing chamber, and a processing gas in the processing chamber A processing gas supply system to supply; an exhaust system for exhausting the processing chamber; an antenna unit having a high-frequency antenna for generating inductively coupled plasma, which is disposed in a plane corresponding to the substrate in the processing chamber; A high-frequency power supply means for supplying high-frequency power to the high-frequency antenna, wherein the high-frequency antenna includes at least a spiral outer antenna that is supplied with the high-frequency power to form an outer induction electric field, and an inner side of the outer antenna. provided concentrically, it possesses an inner antenna forming a spiral which is the high-frequency power to form a supplied inside the induction field, the high frequency power supply means, a high frequency electric The antenna unit has a feeding path from the high-frequency power source through the matching box to the inner antenna and the outer antenna, and includes the antennas and the feeding paths. An inductively coupled plasma processing apparatus, further comprising an impedance adjusting means for adjusting an impedance value of at least one of the inner antenna circuit and the outer antenna circuit, thereby adjusting a current value of each antenna. An inductively coupled plasma processing method for performing inductively coupled plasma processing on a substrate using the impedance adjusting means, adjusting the current value of each antenna by the impedance adjusting means, and adjusting the current flowing through each of the inner antenna and the outer antenna. In comparison, a relatively large voltage is applied to the inner antenna. A first process in which a local plasma is generated by the inner induction electric field formed in a portion corresponding to the inner antenna by flowing a current of a value, and a current having a relatively large current value in the outer antenna And periodically performing a second process in which local plasma is generated by the outer induced electric field formed in a portion corresponding to the outer antenna and the process is performed at different times. The inductively coupled plasma processing method is characterized in that a desired processing distribution is obtained for a substrate.

The Te first aspect odor, before Symbol first process, the first current value for generating said local plasma is relatively large value the current value of the inner current flowing through the inner antenna, performed by the second current value is a relatively small value the current value of the outer current flowing through the outer antenna, the second process is relatively current value of the outer current flowing through the outer antenna The third current value for generating the local plasma having a large value is used , and the current value of the inner current flowing through the inner antenna is set as a fourth current value that is a relatively small value. It is Ru can.

In a second aspect of the present invention, a processing chamber that accommodates a substrate and performs plasma processing, a mounting table on which the substrate is mounted in the processing chamber, and a processing gas supply system that supplies a processing gas into the processing chamber; , An exhaust system for exhausting the processing chamber, an antenna unit disposed in a plane corresponding to the substrate in the processing chamber and having a high frequency antenna for generating inductively coupled plasma, and supplying high frequency power to the high frequency antenna A high-frequency power supply means, and the high-frequency antenna is provided at least concentrically inside the outer antenna and a spiral outer antenna that is supplied with high-frequency power to form an outer induction electric field. A spiral inner antenna that is supplied with electric power to form an inner induction electric field, and a current having a relatively large current value is caused to flow through the inner antenna. A first process for generating a local plasma by the inner induction electric field formed in a portion corresponding to the antenna and performing a process, and a current having a relatively large current value is supplied to the outer antenna to correspond to the outer antenna. The second process in which the local plasma is generated by the external induced electric field formed in the portion to be processed is periodically performed at different times, and the desired process is performed on the substrate at the end of the process. In this case, the current value of the inner current supplied to the inner antenna and the current value of the outer current supplied to the outer antenna can be changed independently, and the current value of the inner current is changed to the local current. And changing the current value of the outer current in a predetermined cycle between a first current value for generating a static plasma and a fourth current value smaller than the first current value. Induction, characterized in that to vary in different phases the predetermined period at and said inner current and between the third current value for generating the said second current value smaller than the third current value A coupled plasma processing method is provided.
In this case, the phase difference between the inner current and the outer current can be a half cycle. Further, the inner current and the outer current can be supplied in a pulse shape.

  The second current value and the fourth current value may be small values or zero so that the outer antenna and the inner antenna do not generate inductively coupled plasma, respectively.

  The period of the first process and the period of the second process can be appropriately set according to the contents of the process and the process distribution to be obtained. In this case, the period of the first process and the period of the second process can be set to be the same.

  The current value for generating the local plasma in the first process and the current value for generating the local plasma in the second process depend on the content of the process and the processing distribution to be obtained. It can be set accordingly. In this case, the current value for generating local plasma in the first process and the current value for generating local plasma in the second process can be set to be the same.

In a third aspect of the present invention, a processing chamber for accommodating a substrate and performing plasma processing, a mounting table on which the substrate is mounted in the processing chamber, a processing gas supply system for supplying a processing gas into the processing chamber, , An exhaust system for exhausting the processing chamber, an antenna unit disposed in a plane corresponding to the substrate in the processing chamber and having a high frequency antenna for generating inductively coupled plasma, and supplying high frequency power to the high frequency antenna high frequency power supply and means, the high frequency antenna which is to have a plurality of antennas forming a spiral to form an induced electric field is a high frequency power is supplied, the high-frequency power supply means includes a high frequency power source and matching unit The antenna unit has a feeding path from the high-frequency power source to the plurality of antennas through a matching unit, and includes a plurality of antennas and the feeding paths. The antenna circuit is formed, the substrate using at least one of the impedance adjusting, have been the inductively coupled plasma processing apparatus further comprises an impedance adjusting means for adjusting the current value of each antenna of the plurality of antenna circuit An inductively coupled plasma processing method for performing inductively coupled plasma processing, wherein the impedance adjustment unit adjusts the current value of each antenna, and is a part of the plurality of antennas and relatively large to at least one antenna The process of generating a local plasma by the induced electric field formed in the portion corresponding to the antenna by passing a current of the current value is periodically performed multiple times for different antennas at different times. An invitation characterized by obtaining a desired processing distribution for the substrate at the end of processing. It provides a binding plasma processing method.

In a fourth aspect of the present invention, a processing chamber for accommodating a substrate and performing plasma processing, a mounting table on which the substrate is mounted in the processing chamber, and a processing gas supply system for supplying a processing gas into the processing chamber, , An exhaust system for exhausting the processing chamber, an antenna unit disposed in a plane corresponding to the substrate in the processing chamber and having a high frequency antenna for generating inductively coupled plasma, and supplying high frequency power to the high frequency antenna A high-frequency power supply means, and the high-frequency antenna is provided at least concentrically inside the outer antenna and a spiral outer antenna that is supplied with high-frequency power to form an outer induction electric field. possess an inner antenna forming a spiral which power to form a supplied inside the induction field, the high frequency power supply means, and a high frequency power source and the matching circuit, wherein The antenna unit has a feeding path from the high-frequency power source to the inner antenna and the outer antenna through a matching unit, and an inner antenna circuit and an outer antenna circuit including the antennas and the feeding paths are formed. An inductively coupled plasma processing apparatus further comprising an impedance adjusting means for adjusting an impedance of at least one of the inner antenna circuit and the outer antenna circuit, thereby adjusting a current value of each antenna , and further comprising the impedance adjusting means The current value of each antenna is adjusted by the above , and in the comparison of the currents flowing through the inner antenna and the outer antenna, a portion corresponding to the inner antenna by flowing a relatively large current value through the inner antenna Locally generated by the inner induced electric field formed in A local plasma is generated by a first process in which plasma is generated and a process having a relatively large current value is caused to flow through the outer antenna and the outer induced electric field formed in a portion corresponding to the outer antenna. And a second processing for performing the processing periodically at different times, and a control unit that controls to obtain a desired processing distribution for the substrate at the end of the processing. An inductively coupled plasma processing apparatus is provided.

In a fifth aspect of the present invention, a processing chamber that accommodates a substrate and performs plasma processing, a mounting table on which the substrate is mounted, and a processing gas supply system that supplies a processing gas into the processing chamber; , An exhaust system for exhausting the processing chamber, an antenna unit disposed in a plane corresponding to the substrate in the processing chamber and having a high frequency antenna for generating inductively coupled plasma, and supplying high frequency power to the high frequency antenna high frequency power supply and means, the high frequency antenna which is to have a plurality of antennas forming a spiral to form an induced electric field is a high frequency power is supplied, the high-frequency power supply means includes a high frequency power source and matching unit The antenna unit has a feeding path from the high-frequency power source to the plurality of antennas through a matching unit, and includes a plurality of antennas and the feeding paths. The antenna circuit is formed, and adjusting at least one impedance of the plurality of antenna circuit, a inductively coupled plasma processing apparatus further comprises an impedance adjusting means for adjusting the current value of each of the antenna has, further wherein The current value of each antenna is adjusted by an impedance adjusting means, and a current having a relatively large current value is passed through at least one antenna, and is formed in a portion corresponding to the antenna. The processing performed by generating a local plasma by the induced electric field is periodically performed a plurality of times for different antennas at different times , and a desired processing distribution is obtained for the substrate at the end of the processing. An inductively coupled plasma processing apparatus is provided, which includes a control unit that controls as described above.

  According to the present invention, a first process for generating a local plasma by an inner induction electric field formed in a portion corresponding to the inner antenna by flowing a current having a relatively large current value to the inner antenna, The second process, in which a process is performed by generating a local plasma by an outer induced electric field formed in a portion corresponding to the outer antenna by flowing a current having a relatively large current value to the outer antenna, is made different in time. Since the desired processing distribution is obtained for the substrate at the end of the processing, the desired processing distribution can be obtained even when the desired inductively coupled plasma is difficult to be generated on the entire substrate under high pressure conditions or the like. Can be obtained.

It is sectional drawing which shows the inductively coupled plasma processing apparatus which concerns on one Embodiment of this invention. It is a top view which shows an example of the high frequency antenna of the antenna unit for inductively coupled plasma used for the inductively coupled plasma processing apparatus of FIG. It is a figure which shows the electric power feeding circuit of the high frequency antenna used for the inductively coupled plasma processing apparatus of FIG. The impedance adjustment by the variable capacitor is a diagram schematically showing that may freely alter the current I _in the current I _out and the inner antenna circuitry outside the antenna circuit. According to an embodiment of the present invention, the plasma state and the etching rate (E / R) when inductively coupled plasma processing is performed by generating a local plasma directly under the inner antenna and immediately under the outer antenna. It is a figure which shows a relationship (a) and a process result (b). It is a figure which shows the example which changed the electric current value of the inner side antenna, and the electric current value of the outer side antenna periodically. It is a figure which shows the example of the waveform at the time of making a current change into a pulse form. It is a top view which shows the tricyclic antenna which is another example of a high frequency antenna. It is a top view which shows the other example of an antenna used for a high frequency antenna. It is a top view which shows the 1st part used for the antenna of FIG. It is a top view which shows the 2nd part used for the antenna of FIG. It is a top view which shows the further another example of the antenna used for a high frequency antenna. It is a top view which shows the other example of a high frequency antenna.

  Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention, and FIG. 2 is a plan view showing an antenna unit used in the inductively coupled plasma processing apparatus. This apparatus is used, for example, for etching a metal film, an ITO film, an oxide film, or the like when forming a thin film transistor on an FPD glass substrate, or for ashing a resist film. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like.

This plasma processing apparatus has a rectangular tube-shaped airtight main body container 1 made of a conductive material, for example, aluminum whose inner wall surface is anodized. The main body container 1 is assembled so as to be disassembled, and is electrically grounded by a ground wire 1a. The main body container 1 is divided into an antenna chamber 3 and a processing chamber 4 by a dielectric wall 2 in the vertical direction. Therefore, the dielectric wall 2 forms a ceiling wall of the processing chamber 4 and functions as a dielectric window that transmits an induction electric field formed by a high-frequency antenna described later. The dielectric wall 2 is made of ceramics such as Al ₂ O ₃ , quartz, or the like.

  A shower casing 11 for supplying a processing gas is fitted into the lower portion of the dielectric wall 2. The shower casing 11 is provided in a cross shape, for example, and has a function as a beam for supporting the dielectric wall 2 from below. The shower housing 11 that supports the dielectric wall 2 is suspended from the ceiling of the main body container 1 by a plurality of suspenders (not shown).

  This shower casing 11 is made of a conductive material, preferably a metal, for example, aluminum whose inner surface or outer surface is anodized so as not to generate contaminants. This shower casing 11 is electrically grounded.

  The shower casing 11 is formed with a gas channel 12 extending horizontally, and a plurality of gas discharge holes 12 a extending downward are communicated with the gas channel 12. On the other hand, a gas supply pipe 20 a is provided at the center of the upper surface of the dielectric wall 2 so as to communicate with the gas flow path 12. The gas supply pipe 20a penetrates from the ceiling of the main body container 1 to the outside and is connected to a processing gas supply system 20 including a processing gas supply source and a valve system. Therefore, in the plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied into the shower housing 11 through the gas supply pipe 20a and discharged into the processing chamber 4 from the gas discharge hole 12a on the lower surface thereof. The

  A support shelf 5 protruding inward is provided between the side wall 3 a of the antenna chamber 3 and the side wall 4 a of the processing chamber 4 in the main body container 1, and the dielectric wall 2 is placed on the support shelf 5. The

  An antenna unit 50 including a radio frequency (RF) antenna 13 is disposed in the antenna chamber 3. The high frequency antenna 13 is connected to a high frequency power supply 15 through a matching unit 14. The high frequency antenna 13 is separated from the dielectric wall 2 by a spacer 17 made of an insulating member. Then, a high frequency power having a frequency of 13.56 MHz, for example, is supplied to the high frequency antenna 13 from the high frequency power supply 15, whereby an induction electric field is formed in the processing chamber 4, and the induction electric field is supplied from the shower casing 11. The processing gas is turned into plasma. The antenna unit 50 will be described later.

  Below the inside of the processing chamber 4, there is a mounting table 23 for mounting a rectangular FPD glass substrate (hereinafter simply referred to as a substrate) G so as to face the high-frequency antenna 13 with the dielectric wall 2 interposed therebetween. Is provided. The mounting table 23 is made of a conductive material, for example, aluminum whose surface is anodized. The substrate G mounted on the mounting table 23 is attracted and held by an electrostatic chuck (not shown).

  The mounting table 23 is housed in an insulator frame 24 and is supported by a hollow column 25. The support column 25 penetrates the bottom of the main body container 1 while maintaining an airtight state, is supported by an elevating mechanism (not shown) disposed outside the main body container 1, and the loading table 23 is moved by the elevating mechanism when the substrate G is loaded / unloaded. Is driven in the vertical direction. A bellows 26 that hermetically surrounds the support column 25 is disposed between the insulator frame 24 that houses the mounting table 23 and the bottom of the main body container 1. In addition, airtightness in the processing container 4 is guaranteed. Further, on the side wall 4a of the processing chamber 4, a loading / unloading port 27a for loading / unloading the substrate G and a gate valve 27 for opening / closing the loading / unloading port 27a are provided.

  A high frequency power source 29 is connected to the mounting table 23 via a matching unit 28 by a power supply line 25 a provided in the hollow support column 25. The high frequency power supply 29 applies high frequency power for bias, for example, high frequency power having a frequency of 3.2 MHz to the mounting table 23 during plasma processing. A self-bias is formed by the high-frequency power for bias, and ions in the plasma generated in the processing chamber 4 are effectively drawn into the substrate G.

  Further, in the mounting table 23, a temperature control mechanism including a heating means such as a ceramic heater, a refrigerant flow path, and the like, and a temperature sensor are provided in order to control the temperature of the substrate G (both not shown). ). Piping and wiring for these mechanisms and members are all led out of the main body container 1 through the hollow support column 25.

  An exhaust device 30 including a vacuum pump and the like is connected to the bottom of the processing chamber 4 through an exhaust pipe 31. The exhaust chamber 30 exhausts the processing chamber 4, and the inside of the processing chamber 4 is set and maintained in a predetermined vacuum atmosphere (for example, 1.33 Pa) during the plasma processing.

  A cooling space (not shown) is formed between the back surface side of the substrate G placed on the mounting table 23, that is, between the surface of the mounting table 23 on which the substrate G is placed and the back surface of the substrate G. A He gas flow path 41 is provided for supplying He gas as a heat transfer gas at a certain pressure. By supplying the heat transfer gas to the back side of the substrate G in this way, it is possible to avoid a temperature rise or temperature change of the substrate G under vacuum.

  Each component of the plasma processing apparatus is connected to and controlled by a control unit 100 including a microprocessor (computer). Connected to the control unit 100 is a user interface 101 including a keyboard for performing an input operation such as command input for managing the plasma processing apparatus by an operator, a display for visualizing and displaying the operating status of the plasma processing apparatus, and the like. Has been. Further, the control unit 100 causes each component of the plasma processing apparatus to execute processing according to a control program for realizing various processings executed by the plasma processing apparatus under the control of the control unit 100 and processing conditions. A storage unit 102 that stores a program for processing, that is, a processing recipe, is connected. The processing recipe is stored in a storage medium in the storage unit 102. The storage medium may be a hard disk or semiconductor memory built in the computer, or may be portable such as a CDROM, DVD, or flash memory. Moreover, you may make it transmit a recipe suitably from another apparatus via a dedicated line, for example. Then, if desired, an arbitrary processing recipe is called from the storage unit 102 by an instruction from the user interface 101 and is executed by the control unit 100, so that the desired processing in the plasma processing apparatus is performed under the control of the control unit 100. Is performed.

Next, the antenna unit 50 will be described in detail.
The antenna unit 50 includes the high-frequency antenna 13 as described above, and further includes a power feeding unit 51 that feeds the high-frequency power that has passed through the matching unit 14 to the high-frequency antenna 13.

  As shown in FIG. 2, the high-frequency antenna 13 has a planar shape and has a rectangular outline (rectangular shape), and its arrangement area corresponds to the rectangular substrate G.

  The high-frequency antenna 13 has an outer antenna 13a that forms an outer portion and an inner antenna 13b that forms an inner portion. The outer antenna 13a and the inner antenna 13b are both planar type whose outlines are rectangular. The outer antenna 13a and the inner antenna 13b are arranged concentrically.

  As shown in FIG. 2, the outer antenna 13a constituting the outer portion is wound around four antenna wires 61, 62, 63, 64 made of a conductive material, such as copper, so that the whole is spiral. Multiple (quadruple) antennas are configured. Specifically, the antenna wires 61, 62, 63, and 64 are wound by shifting the position by 90 °, the antenna wire is arranged in a substantially frame shape, and the number of turns at the corner where the plasma tends to be weakened. The number of turns is larger than the number of turns at the center of the side. In the illustrated example, the number of turns at the corner is 3, and the number of turns at the center of the side is 2.

  As shown in FIG. 2, the inner antenna 13b constituting the inner portion is wound around four antenna wires 71, 72, 73, 74 made of a conductive material, such as copper, so that the entire antenna becomes a spiral shape. Multiple (quadruple) antennas are configured. Specifically, the antenna wires 71, 72, 73, and 74 are wound by shifting the position by 90 °, the antenna wire is arranged in a substantially frame shape, and the number of turns at the corner where the plasma tends to be weakened. The number of turns is larger than the number of turns at the center of the side. In the illustrated example, the number of turns at the corner is 3, and the number of turns at the center of the side is 2.

  Power is supplied to the antenna wires 61, 62, 63, 64 of the outer antenna 13a through the four terminals 22a at the center and the feeder wire 69. In addition, power is supplied to the antenna lines 71, 72, 73, and 74 of the inner antenna 13b through four terminals 22b and a power supply line 79 arranged in the center.

  Near the central portion of the antenna chamber 3, four first power supply members 16a that supply power to the outer antenna 13a and four second power supply members 16b that supply power to the inner antenna 13b (only one in FIG. 1). The lower end of each first feeding member 16a is connected to the terminal 22a of the outer antenna 13a, and the lower end of each second feeding member 16b is connected to the terminal 22b of the inner antenna 13b. The four first power supply members 16a are connected to the power supply line 19a, and the four second power supply members 16b are connected to the power supply line 19b, and these power supply lines 19a and 19b are matched devices. The power supply line 19 extends from the power supply line 19. The power supply lines 19, 19 a, 19 b, the power supply members 16 a, 16 b, the terminals 22 a, 22 b, and the power supply lines 69, 79 constitute a power supply unit 51 of the antenna unit 50.

  A variable capacitor 21 is interposed in the power supply line 19a, and no variable capacitor is interposed in the power supply line 19b. The four first power supply members 16a, the power supply line 19a, the variable capacitor 21, and the outer antenna 13a constitute an outer antenna circuit, and the four second power supply members 16b, the power supply line 19b, and the inner antenna 13b. Constitutes the inner antenna circuit.

  As will be described later, by adjusting the capacitance of the variable capacitor 21, the impedance of the outer antenna circuit is controlled, whereby the magnitude relationship between the currents flowing through the outer antenna circuit and the inner antenna circuit can be adjusted. The variable capacitor 21 functions as a current control unit for the outer antenna circuit.

The impedance control of the high frequency antenna 13 will be described with reference to FIG. FIG. 3 is a diagram illustrating a power feeding circuit of the high-frequency antenna 13. As shown in this figure, the high frequency power from the high frequency power supply 15 is supplied to the outer antenna circuit 91a and the inner antenna circuit 91b through the matching unit 14. Here, the outer antenna circuit 91a, because they consist of outer antenna 13a and the variable capacitor 21, the impedance Z _out of the outer antenna circuit 91a, varied by varying the capacity by adjusting the position of the variable capacitor 21 Can be made. On the other hand, the inner antenna circuit 91b comprises only the inner antenna 13b, and its impedance Z _in is fixed. At this time, since the current _{I in} the current _{I out} and the inner antenna circuit 91b of the outer antenna circuit 91a changes according to the ratio of _{Z out} and _{Z in,} current in response to a change in the impedance _{Z out I out} and the current I _in can be changed. That is, since the variable capacitor 21 is connected to the outer antenna 13a to allow the impedance adjustment of the outer antenna circuit 91a, the current I _out of the outer antenna circuit 91a and the inner antenna circuit 91b are schematically shown in FIG. Current I _in can be freely changed. By controlling the current flowing through the outer antenna 13a and the current flowing through the inner antenna 13b in this way, the outer induction electric field formed at a position corresponding to the outer antenna 13a and the position corresponding to the inner antenna 13b are formed. The inner induced electric field can be controlled, and thereby the plasma density distribution generated by the induced electric field can be controlled. Note that a capacitor may also be provided in the inner antenna circuit 91b to further improve the current controllability.

  Next, a processing operation when performing plasma processing, for example, plasma etching processing or plasma ashing processing, on the substrate G using the inductively coupled plasma processing apparatus configured as described above will be described. The following processing operations are performed under the control of the control unit 100.

  First, the substrate G is loaded into the processing chamber 4 from the loading / unloading port 27a with the gate valve 27 opened, and is loaded on the loading surface of the loading table 23. The substrate G is fixed on the mounting table 23 (not shown). Next, the processing gas supplied from the processing gas supply system 20 into the processing chamber 4 is discharged into the processing chamber 4 from the gas discharge holes 12 a of the shower housing 11 and processed by the exhaust device 30 through the exhaust pipe 31. By evacuating the chamber 4, the processing chamber is maintained in a predetermined vacuum atmosphere.

  At this time, He gas is supplied to the cooling space on the back side of the substrate G as a heat transfer gas via the He gas flow path 41 in order to avoid a temperature rise or temperature change of the substrate G.

  Next, a high frequency of 13.56 MHz, for example, is applied from the high frequency power supply 15 to the high frequency antenna 13, thereby forming a uniform induction electric field in the processing chamber 4 via the dielectric wall 2. Due to the induction electric field formed in this manner, the processing gas is turned into plasma in the processing chamber 4 to generate high-density inductively coupled plasma. With this plasma, a plasma etching process or a plasma ashing process is performed on the substrate G as a plasma process.

In this case, as described above, the high-frequency antenna 13 is configured such that the outer antenna 13a constituting the outer portion and the inner antenna 13b constituting the inner portion are arranged concentrically at intervals. and connecting a variable capacitor 21 to the outside antenna 13a constituting a part, since to allow an impedance adjustment of the outer antenna circuit 91a, and a current _{I in} the current _{I out} and the inner antenna circuit 91b of the outer antenna circuit 91a freely Can be changed.

  Inductively coupled plasma generates plasma in a space immediately below the high-frequency antenna 13, and since the plasma density at each position corresponds to the electric field strength at each position, the position of the variable capacitor 21 has been conventionally adjusted. Thus, the plasma density distribution is controlled by controlling the electric current intensity distribution by controlling the current flowing through the outer antenna 13a and the current flowing through the inner antenna 13b.

  However, when such an inductively coupled plasma process is performed under a high pressure condition of 100 mTorr or more, the plasma is difficult to diffuse, so that the plasma is locally concentrated at a position where the plasma is easily maintained regardless of the arrangement of the antenna 13. It is easy to maintain the plasma with a desired density distribution over the entire substrate even by adjusting the antenna current, and a desired processing distribution, typically a uniform processing distribution, may not be obtained. .

Therefore, in the present embodiment, the magnitude relationship between the value of the current I _in flowing through the inner antenna 13b and the value of the current I _out flowing through the outer antenna 13a using the current control function by the variable capacitor 21 as shown in FIG. , The current I _{in is set} to a relatively large first current value, and the current I _out is set to a relatively small second current value to generate local plasma (inside plasma) immediately below the inner antenna 13b. a first processing for processing Te, in other magnitude relationship between the value of the current _{I in} flowing through the value of the current _{I out} flowing through the outer antenna 13a and the inner antenna 13b, a relatively large third current electric current _{I out} a value, a fourth current value the value of the current I _in a relatively small, second performs processing immediately under outer antenna 13a generates a local plasma (outer plasma) 2 By performing the processing differently in time, it is possible to prevent the plasma from the outer antenna 13a and the plasma from the inner antenna 13b from affecting each other and concentrating the plasma at an unintended location. Process distribution, typically a uniform process distribution.

  In other words, in inductively coupled plasma processing under high pressure conditions, even if it is difficult to maintain the plasma uniformly over the entire substrate G or with the intended distribution with the normal power supply, local plasma can be maintained in this way. By generating the inner local plasma and the outer local plasma by temporally differing, it is possible to obtain a desired processing distribution when the processing is completed.

  For example, as shown in FIG. 5A, the first half of the process is a first process in which a local plasma (inner plasma) is generated only directly under the inner antenna 13b and an etching process is performed. As a second process in which local plasma (external plasma) is generated only under the outer antenna 13a and etching is performed, as a result, a uniform etching rate (E / E) in the plane of the substrate as shown in FIG. 5B. R) is obtained.

  However, when the local inner plasma and the outer plasma are generated separately in the first and second half of the process, the temperature difference occurs between the plasma generation unit and the non-plasma generation unit. There is a concern that the difference may affect the members in the processing chamber 4 and the substrate G. In such a case, the effect of such a temperature difference is maintained while maintaining the above effect by alternately switching the first process using the inner plasma and the second process using the outer plasma in a short time. Can be suppressed. Typically, as shown in FIG. 6, by changing the position of the capacitor 21, the current value of the inner antenna 13b is cycled between a relatively large first current value and a relatively small fourth current value. At the same time, the current value of the outer antenna 13a is periodically changed between a relatively small second current value and a relatively large third current value. At this time, since the current values of the inner antenna 13b and the outer antenna 13a are changed by changing the position of the capacitor 21, the period of the current value change of the inner antenna 13b and the outer antenna 13a is the same, and the phase is shifted by a half cycle. It will be a thing.

  Note that the period of the first process and the period of the second process may be set as appropriate according to the contents of the process and the process distribution to be obtained, and these periods may be the same or either may be longer. By making these processing periods the same, it becomes easy to obtain a uniform processing distribution. In addition, the first current value and the third current value for generating the local plasma may be appropriately set according to the contents of the process and the process distribution to be obtained. May be large. By making these values the same, it becomes easy to obtain a uniform processing distribution.

  In this embodiment, since the current values of the inner antenna 13b and the outer antenna 13a are controlled by adjusting the position of the capacitor 21, the current values of the inner antenna 13b and the outer antenna 13a cannot be changed independently. It is also possible to change the current value independently by connecting separate high frequency power supplies to 13b and the outer antenna 13a. In this case, the period for changing the current is the same between the inner antenna 13b and the outer antenna 13a, but the phase difference of the current value change between the inner antenna 13b and the outer antenna 13a is not a half period even if it is a half period. It may be.

  Further, when the current value is periodically changed, the current change may be pulsed by using a pulse generator or the like, and the waveform in that case is not particularly limited, and a rectangular wave shown in FIG. It may be a linear waveform such as a triangular wave shown in (b) or a curved waveform like a sine wave shown in (c). In any case, the maximum current value can be the first current value and the third current value, and the minimum current value can be the fourth current value and the second current value. .

  Furthermore, the values of the relatively large first current and the third current for generating the local plasma may be the same or either one may be large. The relatively small fourth current value and second current value may be 0 or may have predetermined values. When the local plasma is to be generated only directly below the inner antenna 13b and directly below the outer antenna 13a, the fourth current value and the second current value are small enough not to generate inductively coupled plasma. There is a need.

  The outer antenna 13a and the inner antenna 13b are quadruple antennas in which the four antenna wires are wound by shifting 90 ° at a time so that the whole is spiral, but the number of antenna wires is limited to four. It may be an arbitrary number of multiple antennas, and the angle to be shifted is not limited to 90 °.

Next, another example of the structure of the high frequency antenna will be described.
In the above example, a case where a high frequency antenna is configured by providing two annular antennas of the outer antenna 13a and the inner antenna 13b concentrically is shown, but a structure in which three or more annular antennas are concentrically arranged. Also good.

  FIG. 8 shows a tricyclic high-frequency antenna in which three annular antennas are arranged. Here, the outermost antenna 113a arranged on the outermost side, the innermost antenna 113c arranged on the innermost side, and the high-frequency antenna 113 provided concentrically with the intermediate antenna 113b arranged between these are shown. In FIG. 8, the detailed structure of each antenna is omitted for convenience, but the same structure as the outer antenna 13a and the inner antenna 13b can be used.

  When three or more annular antennas are provided, as in the case of the high-frequency antenna provided with the two annular antennas, a high-frequency power is branched from one high-frequency power source and supplied to each annular antenna. By providing a variable capacitor on the feed line, the current of each antenna can be controlled. And current control can be performed by providing a variable capacitor in the feed line to at least one antenna. When current control is performed at a different ratio for each annular antenna, which is equivalent to the case of the high frequency antenna provided with the two annular antennas, a capacitor is connected to the feeding line of the n-1 annular antenna, where n is the number of annular antennas. May be provided. Of course, a separate high frequency power source may be connected to each antenna to control these current values independently.

  In this case, all the local plasmas corresponding to the respective antennas may be generated while being different in time, or two or more local plasmas may be generated at the same time timing. Further, as described above, the current value may be periodically changed in a short time, and the current change may be pulsed.

Next, another example of the structure of each antenna will be described.
In the above example, each antenna (outer antenna 13a, inner antenna 13b, outermost antenna 113a, intermediate antenna 113b, innermost antenna 113c, etc.) is configured in an annular shape so that high-frequency power is supplied integrally. Each antenna may have a plurality of regions corresponding to different portions of the substrate, and high frequency power may be supplied independently to the plurality of regions. Thereby, finer plasma distribution control can be performed. For example, a rectangular plane corresponding to the rectangular substrate is formed, and a first portion and a second portion are formed by winding a plurality of antenna wires in a spiral shape. The first portion includes a plurality of antenna lines and a rectangular plane. Are formed so as to connect the four corners at positions different from the rectangular plane, and the second portion includes a plurality of antenna lines, and the central portion of the four sides of the rectangular plane. And the center part of the four sides is provided at a position different from the rectangular plane so that the first part and the second part are independently supplied with the high-frequency power. Can do.

A specific configuration will be described with reference to FIGS.
For example, as shown in FIG. 9, the outer antenna 13a forms a rectangular (frame-like) plane corresponding to the rectangular substrate G as a whole, the portion facing the dielectric wall 2 that forms the induction electric field contributing to plasma generation. In addition, a first portion 213a and a second portion 213b are formed by winding a plurality of antenna wires in a spiral shape. The antenna line of the first portion 213a forms four corners of a rectangular plane, and is provided to connect the four corners at a position different from the rectangular plane. The antenna line of the second portion 213b forms a central portion of the four sides of the rectangular plane, and is provided so as to connect the central portions of these four sides at a position different from the rectangular plane. Yes. The power supply to the first part 213a is performed via the four terminals 222a and the power supply line 269, and the power supply to the second part 213b is performed via the four terminals 222b and the power supply line 279. Each high frequency power is supplied to 222b independently.

  As shown in FIG. 10, the first portion 213 a constitutes a quadruple antenna in which four antenna wires 261, 262, 263, and 264 are wound at 90 ° positions and faces the dielectric wall 2. The portions forming the four corners of the rectangular plane are plane portions 261a, 262a, 263a, 264a, and the portions between these plane portions 261a, 262a, 263a, 264a are positions different from the rectangular plane. The three-dimensional parts 261b, 262b, 263b, and 264b are retracted to positions that do not contribute to the generation of the upper plasma. As shown in FIG. 11, the second portion 213 b also constitutes a quadruple antenna in which the four antenna wires 271, 272, 273, 274 are wound at 90 ° positions and face the dielectric wall 2. The portions forming the central portions of the four sides of the rectangular plane are plane portions 271a, 272a, 273a, 274a, and the portion between these plane portions 271a, 272a, 273a, 274a is the rectangular plane. Are three-dimensional portions 271b, 272b, 273b, and 274b that are retracted to positions that do not contribute to the generation of the upper plasma so as to be in different positions.

  With such a configuration, independent plasma distribution control at the corner and the side center is achieved while adopting a relatively simple multiple antenna configuration in which the four antenna wires are wound in a fixed direction as in the above embodiment. Can be realized.

  Alternatively, the local plasma corresponding to the corner and the local plasma corresponding to the center of the side may be generated at different times to form a desired processing distribution.

  In the above example, each antenna is composed of multiple antennas around which a plurality of antenna wires are wound. However, as shown in FIG. 12, one antenna wire 181 may be spirally wound.

  The present invention can be variously modified without being limited to the above embodiment. For example, in the above-described embodiment, an example in which a plurality of antennas for forming an induction electric field are provided concentrically is shown. However, the present invention is not limited to this, and as shown in FIG. 13, for example, a plurality of spiral antennas 413 are arranged in parallel. It may be an arranged structure. Even in this case, a desired processing distribution can be formed by generating the local plasma corresponding to each antenna 413 by shifting the plasma in time.

  Further, in the above embodiment, the example in which the present invention is applied to the case where the inductively coupled plasma is generated under a high-pressure condition in which the plasma is difficult to spread has been described. As long as the local plasma to be generated is generated at different times and a desired processing distribution can be obtained at the end of the processing, the plasma is not limited to a high pressure condition in which the plasma is difficult to spread.

  Furthermore, in the above-described embodiment, an example in which a relatively large current is supplied to a predetermined antenna and local plasma is generated at a position corresponding to the antenna has been described. Plasma weaker than the target plasma may be generated.

  Furthermore, the form of each antenna is not necessarily the same. For example, some antennas may be the multiple antennas shown in FIG. 2 and others may be the multiple antennas shown in FIGS. 9 to 11, or multiple antennas and a single antenna spiral may be mixed. Good.

  Furthermore, in the above embodiment, the variable capacitor is used to adjust the impedance and adjust the current value of each antenna. However, other impedance adjusting means such as a variable coil may be used. In the above-described embodiment, an example in which high-frequency power is distributed and supplied to each antenna from one high-frequency power source has been mainly described. However, as described above, a high-frequency power source may be provided for each antenna.

  Furthermore, in the above embodiment, the ceiling portion of the processing chamber is configured with a dielectric wall, and the antenna is disposed on the top surface of the dielectric wall of the ceiling portion outside the processing chamber. A structure in which the antenna is disposed in the processing chamber may be employed as long as it can be separated from the region by a dielectric wall.

  Furthermore, although the case where the present invention is applied to the etching process or the ashing process has been described in the above embodiment, the present invention can be applied to other plasma processing apparatuses such as a CVD film formation. Furthermore, although the example which used the rectangular substrate for FPD as a board | substrate was shown, it is applicable also when processing other rectangular substrates, such as a solar cell, and is not restricted to a rectangle, For example, circular, such as a semiconductor wafer It can also be applied to a substrate.

1; Main body container 2; Dielectric wall (dielectric member)
3; Antenna chamber 4; Processing chamber 13; High-frequency antenna 13a; Outer antenna 13b; Inner antenna 14; Matching device 15; High-frequency power source 16a, 16b; Feed member 19, 19a, 19b; Variable capacitor 22a, 22b; Terminal 23; Mounting table 30; Exhaust device 50; Antenna unit 51; Feeding unit 61, 62, 63, 64, 71, 72, 73, 74; Antenna wire 91a; Outer antenna circuit 91b; Circuit 100; Control unit 101; User interface 102; Storage unit G; Substrate

Claims (13)

A processing chamber for accommodating a substrate and performing plasma processing;
A mounting table on which a substrate is mounted in the processing chamber;
A processing gas supply system for supplying a processing gas into the processing chamber;
An exhaust system for exhausting the processing chamber;
An antenna unit having a high frequency antenna for generating inductively coupled plasma, which is disposed in a plane corresponding to the substrate in the processing chamber;
Comprising high-frequency power supply means for supplying high-frequency power to the high-frequency antenna,
The high-frequency antenna includes at least a spiral outer antenna that is supplied with high-frequency power to form an outer induction electric field, and is concentrically provided inside the outer antenna, and is supplied with high-frequency power to form an inner induction electric field. an inner antenna forming a spiral to possess,
The high-frequency power supply means has a high-frequency power source and a matching unit,
The antenna unit has a feeding path from the high-frequency power source to the inner antenna and the outer antenna via a matching unit, and an inner antenna circuit and an outer antenna circuit including the antennas and the feeding paths are formed. Inductively coupled to the substrate using an inductively coupled plasma processing apparatus further comprising impedance adjusting means for adjusting an impedance of at least one of the inner antenna circuit and the outer antenna circuit and thereby adjusting a current value of each antenna. An inductively coupled plasma processing method for performing plasma processing,
The impedance adjustment means adjusts the current value of each antenna, and in the comparison of the currents flowing through the inner antenna and the outer antenna, a current having a relatively large current value is passed through the inner antenna. Corresponding to the outer antenna by flowing a current having a relatively large current value through the outer antenna and generating a local plasma by the inner induction electric field formed in the portion corresponding to The second process in which the local plasma is generated by the outer induction electric field formed in the part and the process is periodically performed at different times, and a desired process distribution is applied to the substrate at the end of the process. Inductively coupled plasma processing method characterized in that is obtained. In the first processing, the current value of the inner current flowing through the inner antenna is set to a first current value for generating the local plasma having a relatively large value, and the current of the outer current flowing through the outer antenna is determined. performed by the second current value is a relatively small value the value,
In the second process, the current value of the outer current flowing in the outer antenna is set to a third current value for generating the local plasma having a relatively large value, and the current of the inner current flowing in the inner antenna is determined. The inductively coupled plasma processing method according to claim 1 , wherein the value is performed as a fourth current value which is a relatively small value. A processing chamber for accommodating a substrate and performing plasma processing;
A mounting table on which a substrate is mounted in the processing chamber;
A processing gas supply system for supplying a processing gas into the processing chamber;
An exhaust system for exhausting the processing chamber;
An antenna unit having a high frequency antenna for generating inductively coupled plasma, which is disposed in a plane corresponding to the substrate in the processing chamber;
High-frequency power supply means for supplying high-frequency power to the high-frequency antenna;
Comprising
The high-frequency antenna includes at least a spiral outer antenna that is supplied with high-frequency power to form an outer induction electric field, and is concentrically provided inside the outer antenna, and is supplied with high-frequency power to form an inner induction electric field. And a spiral inner antenna that
A first process for performing a process by generating a local plasma by the inner induction electric field formed in a portion corresponding to the inner antenna by passing a relatively large current value through the inner antenna; and the outer antenna A second process in which a process is performed by generating a local plasma by the outer induction electric field formed in a portion corresponding to the outer antenna by flowing a current having a relatively large current value to the outer antenna at different times. Perform periodically, so that the desired processing distribution is obtained for the substrate at the end of processing,
At that time, the current value of the inner current supplied to the inner antenna and the current value of the outer current supplied to the outer antenna can be independently changed, and the current value of the inner current is used to generate the local plasma. A third current for generating the local plasma is generated by changing the current value of the outer current at a predetermined cycle between a first current value and a fourth current value smaller than the first current value. And a second current value smaller than the third current value, the inductively coupled plasma processing method, wherein the phase is changed in the predetermined cycle and in a phase different from the inner current. The inductively coupled plasma processing method according to claim 3 , wherein the phase difference between the inner current and the outer current is a half cycle. Inductively coupled plasma processing method according to claim 3 or claim 4 wherein the inner current and the outer current characterized in that it is supplied in pulses. The second current value and the fourth current value, according to claim 5 claim 2, wherein each said outer antenna and the inner antenna a small value or zero so as not to generate inductively coupled plasma The inductively coupled plasma processing method according to any one of the above. The period of said 1st process and the period of said 2nd process are suitably set according to the content of a process, and the process distribution to obtain, The any one of Claims 1-6 characterized by the above-mentioned. The inductively coupled plasma processing method according to the item. 8. The inductively coupled plasma processing method according to claim 7 , wherein a period of the first process and a period of the second process are the same. The current value for generating the local plasma in the first process and the current value for generating the local plasma in the second process depend on the content of the process and the processing distribution to be obtained. The inductively coupled plasma processing method according to any one of claims 1 to 8 , wherein the inductively coupled plasma processing method is set as appropriate. And the current value for generating a local plasma in the first process, to claim 9, wherein the current value for generating a local plasma in the second processing, characterized in that the same The inductively coupled plasma processing method described. A processing chamber for accommodating a substrate and performing plasma processing;
A mounting table on which a substrate is mounted in the processing chamber;
A processing gas supply system for supplying a processing gas into the processing chamber;
An exhaust system for exhausting the processing chamber;
An antenna unit having a high frequency antenna for generating inductively coupled plasma, which is disposed in a plane corresponding to the substrate in the processing chamber;
Comprising high-frequency power supply means for supplying high-frequency power to the high-frequency antenna,
The high frequency antenna, have a plurality of antennas forming a spiral to form an induced electric field is a high frequency power is supplied,
The high-frequency power supply means has a high-frequency power source and a matching unit,
The antenna unit has a power feeding path from the high-frequency power source to the plurality of antennas via a matching unit, and a plurality of antenna circuits including the antennas and the power feeding paths are formed, and the plurality of antenna circuits An inductively coupled plasma processing method for performing inductively coupled plasma processing on a substrate using an inductively coupled plasma processing apparatus that further includes impedance adjusting means for adjusting at least one impedance of the antenna and thereby adjusting a current value of each antenna. There,
The impedance adjustment means adjusts the current value of each antenna, and a current having a relatively large current value is passed through at least one of the plurality of antennas to a portion corresponding to the antenna. The processing performed by generating a local plasma by the formed induction electric field is periodically performed multiple times at different times for different antennas, and a desired processing distribution is obtained for the substrate at the end of the processing. An inductively coupled plasma processing method characterized by comprising: A processing chamber for accommodating a substrate and performing plasma processing;
A mounting table on which a substrate is mounted in the processing chamber;
A processing gas supply system for supplying a processing gas into the processing chamber;
An exhaust system for exhausting the processing chamber;
An antenna unit having a high frequency antenna for generating inductively coupled plasma, which is disposed in a plane corresponding to the substrate in the processing chamber;
Comprising high-frequency power supply means for supplying high-frequency power to the high-frequency antenna,
The high-frequency antenna includes at least a spiral outer antenna that is supplied with high-frequency power to form an outer induction electric field, and is concentrically provided inside the outer antenna, and is supplied with high-frequency power to form an inner induction electric field. an inner antenna forming a spiral to possess,
The high-frequency power supply means has a high-frequency power source and a matching unit,
The antenna unit has a feeding path from the high-frequency power source to the inner antenna and the outer antenna via a matching unit, and an inner antenna circuit and an outer antenna circuit including the antennas and the feeding paths are formed. The inductively coupled plasma processing apparatus further includes impedance adjusting means for adjusting impedance of at least one of the inner antenna circuit and the outer antenna circuit, and thereby adjusting a current value of each antenna ,
Furthermore, the current value of each antenna is adjusted by the impedance adjusting means, and in the comparison of the currents flowing through the inner antenna and the outer antenna, a current having a relatively large current value is passed through the inner antenna. A first process in which local plasma is generated by the inner induction electric field formed in a portion corresponding to the inner antenna and a process is performed; and a current having a relatively large current value is passed through the outer antenna to the outer antenna. The second process of generating a local plasma by the external induction electric field formed in the corresponding part and performing the process periodically is performed at different times, and the desired process is performed on the substrate at the end of the process. An inductively coupled plasma processing apparatus comprising a control unit that controls to obtain a processing distribution. A processing chamber for accommodating a substrate and performing plasma processing;
A mounting table on which a substrate is mounted in the processing chamber;
A processing gas supply system for supplying a processing gas into the processing chamber;
An exhaust system for exhausting the processing chamber;
An antenna unit having a high frequency antenna for generating inductively coupled plasma, which is disposed in a plane corresponding to the substrate in the processing chamber;
Comprising high-frequency power supply means for supplying high-frequency power to the high-frequency antenna,
The high frequency antenna, have a plurality of antennas forming a spiral to form an induced electric field is a high frequency power is supplied,
The high-frequency power supply means has a high-frequency power source and a matching unit,
The antenna unit has a power feeding path from the high-frequency power source to the plurality of antennas via a matching unit, and a plurality of antenna circuits including the antennas and the power feeding paths are formed, and the plurality of antenna circuits An inductively coupled plasma processing apparatus further comprising impedance adjusting means for adjusting an impedance of at least one of the antennas and thereby adjusting a current value of each antenna ,
Further, the impedance adjustment means adjusts the current value of each antenna, and a current having a relatively large current value is passed through at least one antenna that is a part of the plurality of antennas, thereby corresponding to the antenna. The processing performed by generating a local plasma by the induction electric field formed in a part is periodically performed multiple times at different times for different antennas, and a desired processing distribution is applied to the substrate at the end of the processing. An inductively coupled plasma processing apparatus comprising a control unit that controls to obtain the above.

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