201016872 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種導電膜的製作方法，且特別是有 關於一種透明導電膜的製作方法。 【先前技術】 • 應用於各種領域的電子裝置中。舉例而言，液晶顯示面板 中用以維持顯示電壓的晝素電極、對向電極以及觸控面板 中的感測電極都是透明導電膜所應用的領域。透明導電膜 的材料大部份都是以銦錫或銦鋅的金屬氧化物所組成。此 類的金屬氧化物在某一光學厚度下可同時具有光可穿透性 以及導電的性質。 隨著半導體技術的逐步成熟，透明導電膜已經廣泛的 以下將提出以觸控面板為例來進行說明。圖i繪示為 rf觸控面板之示意®。請參照® 1，面板例如 '-承載基板102、-第一透明導電薄膜1〇4、一第二透201016872 IX. Description of the Invention: [Technical Field] The present invention relates to a method of fabricating a conductive film, and more particularly to a method of fabricating a transparent conductive film. [Prior Art] • It is used in electronic devices in various fields. For example, a pixel electrode for maintaining a display voltage in a liquid crystal display panel, a counter electrode, and a sensing electrode in a touch panel are all fields in which a transparent conductive film is applied. Most of the material of the transparent conductive film is composed of a metal oxide of indium tin or indium zinc. Metal oxides of this type can have both light penetrability and electrical conductivity at a certain optical thickness. With the gradual maturity of semiconductor technology, transparent conductive films have been widely described below by taking a touch panel as an example. Figure i shows the schematic of the rf touch panel. Please refer to ® 1, panel such as '-bearing substrate 102, - first transparent conductive film 1〇4, a second through
5 201016872 z»〇D^twr.doc/n 此，承載基板102必需具有一定的機械強度和物理性質以 避免觸控面板100之觸控動作產生錯誤的觸控訊號或是因 人為誤觸造成訊號的傳遞錯誤。舉例而言，承載基板1〇2 往往是玻璃基板或是聚碳酸酯等硬質塑膠基板。 由於玻璃基板可以承受較高的溫度，所以選用玻璃做 為承載基板102時’第一透明導電薄膜104例如是直接鍍 覆於玻璃基板上的透明導電膜。不過，玻璃基板之質地容 易碎裂，且也會使得觸控面板100重量增加。 • * 聚奴酸醋等硬質塑膠基板雖質地較輕且容易成型，卻 無法耐受濺鍍製程的高溫。因此，選用聚碳酸酯(PC)基板 作為承載基板102時，第一透明導電薄膜104必需是鍍有 透明導電膜的PET膜。且此鑛有透明導電膜的PET膜需 額外再經由一貼膜製程才能將PET膜貼覆於硬質塑膠基 板上。因此，PET膜與基板的貼合製程會造成生產成本的 增加，也會因貼膜過程中造成良率的下降。如此一來，不 但會增加生產的成本，觸控面板1〇〇本身的厚度也 加，進而導致可見光的穿透率偏低。 曰 【發明内容】 本發明是提供一種透明導電膜的製作方法，以解決硬 ，塑膠基板無法朗於f知的透明導電薄麟㈣程的 題。 本發明提出一種透明導電膜的製作方法，包括以下所 攻之步驟。首先，提供一反應腔室，其中反應腔室具有至 6 201016872 Zdooztwr.aoc/n 材以及至少一加熱裝置。然後，於反應腔 電榮位於妹上方。接著，利用加熱裝置將带將 二，溫度升溫至—卫作溫度，並將—硬質 :特疋逮率通過電漿上方，其中被㈣撞擊後的乾材^ 將以賤射方式沈積在硬㈣膠基板上形成—透明導電膜。 。在本發明之-實施例中，上述之待機溫度為 C。 。在本發明之一實施例中’上述之工作溫度為〇°Ci 45〇 C。 f本發明之一實施例中，於硬質塑膠基板通過電漿上 方之則，上述之製作方法更包括先行對硬質轉基板進行 預處理製程。此預處理的製程例如是在硬質塑膠基板上 塗佈數十奈米厚度的材料層，其組成成份包括鉻、矽、 砍或上述之組合。 在本發明之一實施例中，於硬質塑膠基板通過電漿上 方之前，上述之製作方法更包括對硬質塑膠基板進行二預 熱處理。舉例而言，預熱處理之製程溫度為川它至130它。 在本發明之一實施例中，上述之硬質塑膠基板的材質 為聚碳酸醋(Polycarbonate, PC)。 在本發明之一實施例中，上述靶材之材質包括以不同 比例組成的銦錫或銦鋅的金屬氧化物。 在本發明之一實施例中，上述之工作溫度越高則特定 速率越快。 本發明在硬質塑膠基板經過反應腔室時，會先經由一 201016872 zouj^iWL.uOC/n 瞬，加熱’此瞬間高溫的環境將有助於提高透明導電薄膜 的導電性和物，質。此外，硬質塑膠基板通過反應腔室 的時間亦可iXPic反應腔至的溫度不同而改變以避免塑膠基 板變^ hilt來’本發明提供—可在硬質塑膠基板上形 成透明導電膜的製作方法。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所關式，作詳細說 明。 【實施方式】 由於塑膠基板本身可操作的溫度範圍較低，所以無法 直接以傳統的濺鍍方式將透明導電膜塗佈於塑膠基板上。 因此，塑膠基板的應用範圍大幅地受到限制。基於這樣的 理由’本發明在此提出一種透明導電膜的製作方法’其可 以直接在硬質塑膠基板上形成透明導電膜並且使透明導電 膜具有良好的導電性質。此外，這樣的製作方式也不會使 得硬質塑膠基板因受熱而變形或是損壞。 圖2繪示為本發明之一實施例的透明導電膜之製作流 程的上視圖，圖3繪示為本發明之一實施例的透明導電膜 之製作流程的側視圖。請同時參照圖2與圖3，本實施例 之透明導電膜的製作方法，包括以下所述之步驟。首先， 提供一反應腔室200 ’其中反應腔室200具有至少一靶材 210以及至少一加熱裝置220。靶材210之材質可包括不同 比例的銦錫或銦鋅的金屬氧化物，當然靶材210之材質也 201016872 ^OOJZ.LWl.U〇C/l\ 可以選用其他的導電物質，本發明不限於此。 在一實施例中，靶材210中銦錫金屬的成分比例與銦 鋅金屬的成分比例可以隨著不同的製程或是產品需求而調 整。舉例而言，靶材210中錫金屬成分的比例可以是 2〜15%。不過’上述成分比例僅為舉例說明之用並非用以 限定本發明之可實施範圍。 然後，於反應腔室200内產生一電漿230，電漿230 φ 例如是產生於靶材21〇上方。電漿230例如是由帶電氣體 分子、氣體原子、電子等粒子所組成。電漿23〇中的這些 粒子具有一定的能量可以撞擊靶材21〇之表面，使靶材21〇 表面的粒子因電漿230轟擊而脫離靶材21〇本體。這些自 靶材210脫離的粒子將會以一濺射方式沈積於另—材質的 表面而達到滅鑛的效果。在本實施例中，反應腔室内 產生$漿230後會先使電漿23〇維持在待機狀態，此時反 應腔室200内的待機溫度例如是〇<t〜2〇(rc左右。 =著，利用加熱裝置220將電漿23〇由上述的待機溫 • H皿至—工作溫度’並將-硬質塑膠基板300通過電聚 230上方。此時，電漿23〇撞擊靶材21〇使靶材21〇表面 的粒子脫離並以-麵方式沈積於—㈣歸基板3〇〇上 形成-透明導電膜310。在此步驟中，反應腔室將被 升皿至〇C〜450°C左右的工作溫度。 勒^本實施例中’加熱裝置220主要是對電漿230加 旱電t 230和從姆2!〇被撞擊出來的粒子同時具 有杈南的能量。如此-來，將有利於無材21〇被撞擊出來 201016872Qoc/n 的粒子得以在硬質塑膠基板300形成具有較佳的機械強度 和物理性質的透明導電膜310。 —般而言，透明導電膜310具有較佳的物理性質，例 如導電阻抗較低。因此，本實施例藉由瞬間加熱的動作使 乾材210被撞擊出來的粒子獲得較高的能量得以形成導電 性質較好的透明導電膜310。此外，本實施例使硬質塑膠 基板300以一特定速率v通過電漿230上方，而非固定地 放置於電漿230上方，所以硬質塑膠基板300不會因過度 善受熱而變型。換言之，本實施例可以在硬質塑膠基板 不變形之前提下，於硬質塑膠基板300上形成—透明導電 膜 310。 值得一提的是，硬質塑膠基板300通過電漿23()上方 的特定速率V實際上與環境的工作溫度條件控制有關。當 工作溫度越高，硬質塑膠基板300通過電漿230上方的特 定速率V需隨之增快。反之，硬質塑膠基板3〇〇通過電漿 230上方的特定速率v則可以較為緩慢。硬質塑膠基板3⑻ • 例如可以設置於一台車上，以藉由控制台車的速率來改變 硬質塑膠基板300通過電漿230上方的特定速率v。 在本實施例中，為了監控反應腔體2〇〇内的溫度變 化’反應腔體200内例如可設置有溫度感測裝置24〇。溫 度感測裝置240可以是-熱電柄棒’其伸入至反應腔體細 内部以感測電聚230的溫度變化。當然，溫度感測裝置24〇 也可以疋其他的感溫裝置，本發明並不限於此。此外，本 實施例是以工作溫度設定於〇t：〜45(rc為例，但在其他實 201016872 zo〇jziwi-ii〇c/n 施例中工作溫度也可隨不同的需求而改變。總而言之，環 境的工作溫度越高，電|23G所獲得的能量越高。透明導 ίΐ=Γ導電度也將有明顯地提升，但受限於硬質塑膜 = 30=本身的耐熱性較低。所以，在本實施例的製作方 法中，壤境的工作溫度必須控制在一適當的範圍之内，盆 不宜無限制的升溫。 八 在進行上述的製程步驟之前，為了提升透明導電膜 310與硬質塑膠紐300之間的附著性，本實施例可以對 硬^膠基板3GG進行-預處理製程。此製程包括形成— 預處理層（未緣示)於硬質塑膠基板綱之表面。預處理声 (未緣不)之材質包括鉻、⑦、氧切或上述之組合。當熟， 預處理層（未繪示）的材質不限於此，在其他的製程步驟令 也可以選用其他的㈣作為賴理層（未緣示）。 另外於硬質塑膠基板3〇〇通過反應腔室2〇〇之前， 本實施例更可以對硬質塑膠基板·進行—預熱處理，其 預熱處理之製程溫度例如為贼至13{rc。預熱處理後的 硬質塑膠基板通過電漿23Q上方時，使得被撞擊出來 的乾材210粒子溫度與硬f瓣基板3⑽的溫度更為接 近。如此一來’不但可以增加透明導電膜31〇的機械強度， =整體透明導電膜310的物理性質也會有明顯的幫助。值 得-提的是，本實施例之硬質塑膠基板3⑼之材質例如採 用聚碳酸自旨’朗酿處理之製程溫度例如不大於13叱 以避免硬質轉基板勘產线形。料，㈣瓣基板 3〇〇之材質還可以是聚甲基丙稀酸醋（pMMA)、聚對苯 11 201016872 一 a〇c/n 二甲酸乙酯(PET)、三醋酸纖維(TAC)、聚亞醯胺(PI)等材 貝。若硬質塑膠基板300採用其他材質時，預熱處理的製 程溫度可以隨之改變。 更進一步而言，一般在對硬質塑膠基板3〇〇進行加工 釗，大部份都會先行對基板做一預烘烤製程，之後再將其 置於一真空腔體中，以幫助表面水氣的有效去除。此外，' 在對硬質塑膠基板300進行塗佈加工前，還可以在其表面 φ 進行一活化製程，其例如是進行電漿製程以活化硬質塑膠 基板300之表面。當然，本發明之製作方法不限定於上述 的前處理步驟。 整體來說，一般應用於觸控面板的下層基板，都須額 外再做一貼膜製程，此貼膜製程乃是將鑛覆有導電膜的塑 膠膜(例如PET膜)貼覆於硬質塑膠基板300上。此貼膜製 程可能發生的問題··除了會有導電膜易剥離的問題外，^ 貼膜的過程中也會造成產品良率的下降。相較於習知設 計，本發明的觸控面板不僅可以摒除額外的貼膜製程，使 • 得產品在製程良率上有較大的提升，同時應用本實施例形 成透明導電膜310的硬質塑膠基板300，不但可以使觸控 面板，有較佳的穿透率，同時硬質塑膠基板3〇〇容易加工 與重量較輕的特性都有助於彌補玻璃基板之缺點。 由本實施例所製得的透明導電膜310具有良好的物理 ^生質，特別是導電穩定性亦有明顯地提升。利用本實施例 的製作方法，在PC基板上所形成之ITO膜的結晶程度， 也可以媲美在玻璃基板上所形成之ITO膜的結晶程度，並 125 201016872 z»〇D^twr.doc/n Therefore, the carrier substrate 102 must have certain mechanical strength and physical properties to prevent the touch action of the touch panel 100 from generating an incorrect touch signal or causing a signal due to human error. The delivery error. For example, the carrier substrate 1〇2 is often a glass substrate or a rigid plastic substrate such as polycarbonate. Since the glass substrate can withstand a relatively high temperature, when the glass is used as the carrier substrate 102, the first transparent conductive film 104 is, for example, a transparent conductive film directly plated on the glass substrate. However, the texture of the glass substrate is easily broken, and the touch panel 100 is also increased in weight. • * Hard plastic substrates such as poly-sour vinegar are lighter and easier to mold, but they cannot withstand the high temperatures of the sputtering process. Therefore, when a polycarbonate (PC) substrate is used as the carrier substrate 102, the first transparent conductive film 104 must be a PET film coated with a transparent conductive film. The PET film with a transparent conductive film in this mine requires an additional film coating process to adhere the PET film to the rigid plastic substrate. Therefore, the bonding process of the PET film and the substrate causes an increase in production cost and a decrease in yield due to the filming process. As a result, not only will the cost of production be increased, but the thickness of the touch panel itself will also increase, resulting in a lower transmittance of visible light. SUMMARY OF THE INVENTION The present invention provides a method for fabricating a transparent conductive film to solve the problem that a hard and plastic substrate cannot be transparent to a transparent conductive thin lining. The present invention proposes a method of fabricating a transparent conductive film, which comprises the following steps. First, a reaction chamber is provided in which the reaction chamber has a Zdooztwr.aoc/n material of at least 6 201016872 and at least one heating device. Then, in the reaction chamber, the electric glory is located above the sister. Then, using the heating device, the temperature is raised to the temperature of the Wei, and the hard: special rate is passed over the plasma, wherein the dry material after the impact is deposited in the hard (4) A transparent conductive film is formed on the adhesive substrate. . In the embodiment of the invention, the above standby temperature is C. . In one embodiment of the invention, the above operating temperature is 〇 °Ci 45 〇 C. In an embodiment of the present invention, in the case where the hard plastic substrate passes over the plasma, the manufacturing method further includes pre-processing the hard substrate. The pretreatment process is, for example, coating a layer of material having a thickness of several tens of nanometers on a rigid plastic substrate, the composition of which includes chromium, tantalum, chopping or a combination thereof. In an embodiment of the invention, before the hard plastic substrate passes over the plasma, the manufacturing method further comprises performing a second preheat treatment on the rigid plastic substrate. For example, the preheat treatment process temperature is from Sichuan to 130. In an embodiment of the invention, the hard plastic substrate is made of polycarbonate (PC). In an embodiment of the invention, the material of the target material comprises a metal oxide of indium tin or indium zinc which is composed of different proportions. In one embodiment of the invention, the higher the operating temperature, the faster the specific rate. When the rigid plastic substrate passes through the reaction chamber, it will firstly heat the environment at a high temperature via a 201016872 zouj^iWL.uOC/n, which will help to improve the conductivity, material and quality of the transparent conductive film. In addition, the time during which the rigid plastic substrate passes through the reaction chamber can be changed by the temperature of the iXPic reaction chamber to avoid the plastic substrate being changed. The present invention provides a method for forming a transparent conductive film on a rigid plastic substrate. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the invention. [Embodiment] Since the plastic substrate itself has a low temperature range, the transparent conductive film cannot be directly applied to the plastic substrate by a conventional sputtering method. Therefore, the application range of the plastic substrate is greatly limited. For the reason of this, the present invention proposes a method of producing a transparent conductive film, which can form a transparent conductive film directly on a rigid plastic substrate and have a good conductive property of the transparent conductive film. In addition, such a manufacturing method does not cause the rigid plastic substrate to be deformed or damaged by heat. 2 is a top view showing a manufacturing process of a transparent conductive film according to an embodiment of the present invention, and FIG. 3 is a side view showing a manufacturing process of a transparent conductive film according to an embodiment of the present invention. Referring to Fig. 2 and Fig. 3 together, the method for fabricating the transparent conductive film of the present embodiment includes the steps described below. First, a reaction chamber 200' is provided in which the reaction chamber 200 has at least one target 210 and at least one heating device 220. The material of the target 210 may include metal oxides of indium tin or indium zinc in different proportions. Of course, the material of the target 210 is also 201016872 ^OOJZ.LWl.U〇C/l\ other conductive materials may be used, and the invention is not limited thereto. this. In one embodiment, the ratio of the composition of the indium tin metal in the target 210 to the composition ratio of the indium zinc metal can be adjusted with different processes or product requirements. For example, the ratio of the tin metal component in the target 210 may be 2 to 15%. However, the above-described composition ratios are for illustrative purposes only and are not intended to limit the scope of the invention. Then, a plasma 230 is generated in the reaction chamber 200, and the plasma 230 φ is generated, for example, above the target 21 〇. The plasma 230 is composed of, for example, particles of a charged gas molecule, a gas atom, an electron or the like. These particles in the plasma 23 have a certain energy to strike the surface of the target 21, so that the particles on the surface of the target 21 are detached from the target 21 by the bombardment of the plasma 230. These particles detached from the target 210 will be deposited on the surface of the other material by sputtering to achieve the effect of demineralization. In this embodiment, after the slurry 230 is generated in the reaction chamber, the plasma 23〇 is first maintained in the standby state, and the standby temperature in the reaction chamber 200 is, for example, 〇<t~2〇(rc). The heating device 220 is used to heat the plasma 23 from the above-mentioned standby temperature to the operating temperature and the hard plastic substrate 300 is passed over the electropolymer 230. At this time, the plasma 23 〇 strikes the target 21 The particles on the surface of the target 21 are detached and deposited in a -surface manner on the substrate 3 to form a transparent conductive film 310. In this step, the reaction chamber will be lifted to about 〜C~450 °C. The working temperature is the same as in the present embodiment. The heating device 220 is mainly for the plasma 230 plus the dry electricity t 230 and the particles that are struck from the m 2! 同时 have the energy of the 杈南. So - will benefit The material 21〇 is struck out of the 201016872Qoc/n particles to form a transparent conductive film 310 having better mechanical strength and physical properties on the rigid plastic substrate 300. Generally, the transparent conductive film 310 has better physical properties. For example, the conductive impedance is low. Therefore, this embodiment uses the instant The heating action causes the dry material 210 to obtain higher energy to form a transparent conductive film 310 having better conductivity. Further, in this embodiment, the rigid plastic substrate 300 is passed over the plasma 230 at a specific rate v. Rather than being fixedly placed above the plasma 230, the rigid plastic substrate 300 is not deformed by excessive heat. In other words, the present embodiment can be formed on the rigid plastic substrate 300 before the rigid plastic substrate is deformed. Conductive film 310. It is worth mentioning that the specific rate V of the hard plastic substrate 300 through the plasma 23 () is actually related to the environmental operating temperature condition control. When the operating temperature is higher, the hard plastic substrate 300 passes through the plasma 230. The specific rate V at the top needs to be increased. Conversely, the hard plastic substrate 3 can be slower through a specific rate v above the plasma 230. The rigid plastic substrate 3 (8) • can be placed, for example, on a vehicle for control The rate of the trolley changes the specific rate v of the rigid plastic substrate 300 through the plasma 230. In this embodiment, in order to monitor the reaction Temperature change in the body 2 ' The reaction chamber 200 may be provided with, for example, a temperature sensing device 24 〇. The temperature sensing device 240 may be a thermoelectric shank that protrudes into the interior of the reaction chamber to sense electricity. The temperature of the poly 230 is changed. Of course, the temperature sensing device 24 can also be used for other temperature sensing devices, and the present invention is not limited thereto. In addition, the present embodiment sets the operating temperature to 〇t:~45 (rc as an example). However, in other real 201016872 zo〇jziwi-ii〇c/n examples, the operating temperature can also vary with different needs. In short, the higher the operating temperature of the environment, the higher the energy obtained by the electricity |23G. The transparent conductivity Γ Γ Γ conductivity will also be significantly improved, but limited by the hard plastic film = 30 = its own heat resistance is low. Therefore, in the manufacturing method of this embodiment, the working temperature of the soil must be controlled within an appropriate range, and the basin should not be heated without limitation. In order to improve the adhesion between the transparent conductive film 310 and the rigid plastic button 300 before the above-mentioned process step, the present embodiment can perform a pretreatment process on the hard substrate 3GG. This process involves the formation of a pretreatment layer (not shown) on the surface of the rigid plastic substrate. The material of the pretreatment sound (not included) includes chromium, 7, oxygen cut or a combination of the above. When cooked, the material of the pretreatment layer (not shown) is not limited to this. In other process steps, other (4) layers may also be selected as the layer (not shown). In addition, before the hard plastic substrate 3 passes through the reaction chamber 2, the embodiment can further perform a pre-heat treatment on the hard plastic substrate, and the process temperature of the pre-heat treatment is, for example, thief to 13{rc. When the preheated rigid plastic substrate passes over the plasma 23Q, the temperature of the particles of the dried dry material 210 is closer to the temperature of the hard f-flap substrate 3 (10). As a result, not only can the mechanical strength of the transparent conductive film 31〇 be increased, but also the physical properties of the overall transparent conductive film 310 can be significantly assisted. It is to be noted that the material of the hard plastic substrate 3 (9) of the present embodiment is, for example, a process temperature of, for example, no more than 13 Å from the purpose of the polycarbonate treatment to avoid the hard-to-substrate survey line shape. (4) The material of the valve substrate 3 can also be polymethyl acrylate vinegar (pMMA), polyparaphenylene 11 201016872 - a 〇 c / n dicarboxylic acid ethyl ester (PET), triacetate fiber (TAC), Polyimide (PI) and other materials. If the hard plastic substrate 300 is made of other materials, the process temperature of the preheat treatment can be changed. Furthermore, generally, after processing the rigid plastic substrate 3, most of them will pre-bake the substrate first, and then placed in a vacuum chamber to help the surface moisture. Effectively removed. Further, before the hard plastic substrate 300 is subjected to coating processing, an activation process may be performed on the surface φ, which is, for example, a plasma process to activate the surface of the rigid plastic substrate 300. Of course, the manufacturing method of the present invention is not limited to the above-described pre-processing steps. In general, the lower substrate of the touch panel is generally subjected to a filming process in which a plastic film (for example, a PET film) coated with a conductive film is attached to the rigid plastic substrate 300. . Problems that may occur in this filming process. · In addition to the problem that the conductive film is easily peeled off, the process of filming will also cause a drop in product yield. Compared with the conventional design, the touch panel of the present invention can not only remove the additional film process, but also greatly improve the process yield, and at the same time, the rigid plastic substrate forming the transparent conductive film 310 of the embodiment is applied. 300, not only can make the touch panel have better penetration rate, and the hard plastic substrate 3 〇〇 easy to process and light weight characteristics can help to compensate for the shortcomings of the glass substrate. The transparent conductive film 310 obtained by the present embodiment has a good physical property, and particularly the conductive stability is also remarkably improved. With the production method of this embodiment, the degree of crystallization of the ITO film formed on the PC substrate can be comparable to the degree of crystallization of the ITO film formed on the glass substrate, and
、另外，在耐溫性及耐候性上，透明導電膜310也可以 ，到高信賴要求。例如—般觸控面板要求在8G°C高溫下或 是在60°C，90%相對濕度環境下72〜24〇小時後，透明導 電膜·的阻值變化率可小於25%。因此，應用本實施例 形成之具有透明導電膜310的硬質塑膠基板3〇〇在觸控面 板上也將具有較好的訊號傳輸品質。當然，本實施例:形 成有透明導電膜3i〇的硬質塑膠基板3〇〇不限於應用於觸 控面板中。 201016872 =到良好的特/·生。圖4綠示為本發明之—實施例的 ^之結晶程度比較圖。請參照圖4，繞射曲線物代^ 依以本實施_製作方法形成於pc基板上的ιτ〇膜之X f結晶繞射圖譜，而繞射曲線樣代表利用習知的方法妒 f於玻璃基板上的1το膜之X光結晶繞射圖譜。-般來 就’因為玻璃基板的耐溫性較好，所以ΙΤ0膜在玻璃上 的結晶程度明顯較塑勝材料來得好。因此，ΙΤΟ膜在各特 徵繞射角的峰值都很顯著’如繞射曲線傷所示。由圖4 可知’本實施例之製作方法所製成的ΙΤ〇膜在各特徵繞射 角的峰值也都相當顯著。因此，圖4可以更進一步說明本 實把例的製作方法可以製作結晶程度良好的ιτ〇膜。 圖5本發明之一實施例的觸控面板。請參照圖5，觸 控面板500包括一硬質塑膠基板3〇〇、一透明導電膜、 —透明導電薄膜510以及多個間隔物520。透明導電膜31〇 例如由前述之製程所形成，其直接配置於硬質塑膠基板 3〇〇上。透明導電薄膜510配置於硬質塑膠基板3〇〇與透 13 iuc/n 201016872 位於透明導電薄膜510 薄膜510由鍍有導電膜 明導電膜310上方，且間隔物52〇 與透明導電膜310之間。透明導電 的PET膜所組成。 在本實施财’透3將頓310是直接形成於硬質塑 膠基板300上的導電氧化物膜，而非先形成於ρΕτ膜上再 貼覆於硬質塑膠基板300上。所以，觸控面板5〇〇的厚度 至少較習知設計減少一層ΡΕΤ膜的膜厚。另外，觸控面板 500的製程中不須要將PET膜貼覆於硬質塑膠基板3〇〇 上，所以不會因貼覆製程而產生額外的問題。換言之，觸 控面板500的製程良率可進一步被提升。 綜上所述，硬質塑膠基板在通過靶材上方時，對反應 腔體進行-瞬間加熱的製程，可以製得一物理性質和機械 強度較佳的透明導電膜。同時，藉由台車行進速度的控制 亦可避免硬質塑膠基板因反應腔室過熱而變形。所以，本 發明之透明導電膜的製作方法可以形成物理性質良好的透 明導電膜’也可以避免硬質塑膠基板變形或損壞。 • +雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明’任何所屬技術領域中具有通常知識者，在不 &離本發明之精神和範圍内，當可作些許之更動與潤飾， 因此本發明之保護範圍當視後附之申請專利範圍所界定者 為準。 【圖式簡單說明】 圖1綠示為一種觸控面板之示意圖。 201016872 u〇c/n 圖2 4會示為本發明 程的上視圖。 之-實施儀透日辑物之製作流 圖3纷示為本發明 程的侧視圖。 之一實施例的透明導電膜之製作流 圖4繪示為本發明之一實施例的透明導電膜之詰晶程 度比較圖。 ' 圖5為本發明之—實施例的觸控面板。Further, in terms of temperature resistance and weather resistance, the transparent conductive film 310 can also be used with high reliability. For example, the general touch panel requires that the resistance change rate of the transparent conductive film can be less than 25% after 72 to 24 hours at a high temperature of 8 G ° C or at 60 ° C and 90% relative humidity. Therefore, the rigid plastic substrate 3 having the transparent conductive film 310 formed by applying the embodiment will also have better signal transmission quality on the touch panel. Of course, this embodiment: the rigid plastic substrate 3 formed with the transparent conductive film 3i is not limited to being applied to the touch panel. 201016872 = To a good special / life. Fig. 4 is a green graph showing a comparison degree of crystallinity of the present invention. Referring to FIG. 4, the diffraction curve is based on the Xf crystal diffraction pattern of the iota film formed on the pc substrate according to the method of the present invention, and the diffraction pattern represents the conventional method using the conventional method. The X-ray crystal diffraction pattern of the 1τ film on the substrate. - Generally, because the temperature resistance of the glass substrate is good, the degree of crystallization of the ΙΤ0 film on the glass is significantly better than that of the plastic material. Therefore, the peak of the diffraction angle of each of the ruthenium films is remarkable as shown by the diffraction curve. As is apparent from Fig. 4, the ruthenium film produced by the production method of the present embodiment has a sharp peak at the diffraction angle of each feature. Therefore, Fig. 4 can further explain that the production method of the present embodiment can produce an iotazo film having a good degree of crystallinity. FIG. 5 shows a touch panel according to an embodiment of the present invention. Referring to FIG. 5, the touch panel 500 includes a rigid plastic substrate 3A, a transparent conductive film, a transparent conductive film 510, and a plurality of spacers 520. The transparent conductive film 31 is formed, for example, by the above-described process, and is directly disposed on the rigid plastic substrate 3A. The transparent conductive film 510 is disposed on the rigid plastic substrate 3 and is disposed on the transparent conductive film 510. The film 510 is over the conductive film 310, and the spacer 52 is interposed between the transparent conductive film 310. It consists of a transparent conductive PET film. In the present embodiment, the conductive film is directly formed on the hard plastic substrate 300, and is not formed on the pΕτ film and then attached to the hard plastic substrate 300. Therefore, the thickness of the touch panel 5 减少 is at least reduced by a conventional film design. In addition, the process of the touch panel 500 does not require the PET film to be attached to the rigid plastic substrate 3, so that no additional problems are caused by the coating process. In other words, the process yield of the touch panel 500 can be further improved. In summary, when the rigid plastic substrate is subjected to a process of instantaneous heating of the reaction chamber while passing through the target, a transparent conductive film having better physical properties and mechanical strength can be obtained. At the same time, the control of the traveling speed of the trolley can also prevent the rigid plastic substrate from being deformed due to overheating of the reaction chamber. Therefore, the method for producing a transparent conductive film of the present invention can form a transparent conductive film having good physical properties, and can also prevent deformation or damage of the rigid plastic substrate. The present invention has been disclosed in the above preferred embodiments, but it is not intended to limit the invention to any of ordinary skill in the art, and may be used in the spirit and scope of the present invention. The scope of protection of the present invention is defined by the scope of the appended claims. [Simple description of the drawing] Fig. 1 is a schematic view of a touch panel. 201016872 u〇c/n Figure 2 4 shows a top view of the process of the present invention. - The implementation of the instrument through the collection of the production of the flow of Figure 3 is a side view of the process of the invention. Flow of a Transparent Conductive Film of an Embodiment FIG. 4 is a view showing a comparison of the degree of twinning of a transparent conductive film according to an embodiment of the present invention. FIG. 5 is a touch panel of an embodiment of the present invention.
【主要元件符號說明】 100、500 •觸控面板 102 ·承載基板 104:第一透明導電薄膜 106:第二透明導電薄膜 108、520 :間隔物 200 :反應腔室 210 :靶材 220 :加熱裝置 230 :電漿 240 :溫度感測裝置 300 :硬質塑膠基板 310 :透明導電膜 410、420 :繞射曲線 510 :透明導電薄膜 V:特定速率 15[Main component symbol description] 100, 500 • Touch panel 102 • Carrier substrate 104: First transparent conductive film 106: Second transparent conductive film 108, 520: spacer 200: Reaction chamber 210: Target 220: Heating device 230: plasma 240: temperature sensing device 300: rigid plastic substrate 310: transparent conductive film 410, 420: diffraction curve 510: transparent conductive film V: specific rate 15