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TW201015239A - Illumination optical system, exposure apparatus, and device manufacturing method - Google Patents

Illumination optical system, exposure apparatus, and device manufacturing method Download PDF

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Publication number
TW201015239A
TW201015239A TW098130395A TW98130395A TW201015239A TW 201015239 A TW201015239 A TW 201015239A TW 098130395 A TW098130395 A TW 098130395A TW 98130395 A TW98130395 A TW 98130395A TW 201015239 A TW201015239 A TW 201015239A
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TW
Taiwan
Prior art keywords
light
illumination
optical system
pupil
posture
Prior art date
Application number
TW098130395A
Other languages
Chinese (zh)
Other versions
TWI480705B (en
Inventor
Hirohisa Tanaka
Yasushi Mizuno
Osamu Tanitsu
Masaya Yamamoto
Original Assignee
Nikon Corp
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Publication of TW201015239A publication Critical patent/TW201015239A/en
Application granted granted Critical
Publication of TWI480705B publication Critical patent/TWI480705B/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70191Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

An illumination optical system for applying light from a light source (1) to illuminate a target illuminated face (M, W) is provided. The illuminating optical system contains: a distribution forming optical system (3, 4, 7, 8), including an optical integrator (8), for forming a pupil luminous intensity distribution in an illumination pupil disposed behind the optical integrator (8); and a light shielding unit (9, 91, 92) disposed at a location closely before or behind the illumination pupil to attenuate the light projected toward a point on the target face. The light shielding unit is disposed in a manner that the shielding efficiency of the light shielding unit at a point on a periphery in a predetermined direction (Y direction) along which the light is projected to the target face is higher than the shielding efficiency at a point on the periphery in the other direction.

Description

201015239 〇“ / / j_uf.doc 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種照明光學系統、曝光裝置以及元 件製造方法。更詳細而言’本發明是有關於一種的照明光 學系統,適用於藉由微影(lith〇graPhy)步驟製造例如半 導體元件、攝像元件、液晶顯示元件、薄膜磁頭等的元件 的曝光裝置。 【先前技術】 ® 在此種典型的曝光裝置中,自光源射出的光經由作為 光學積分器(optical integrator)的複眼透鏡(fly eye iens), 而形成作為由多個光源形成的實質上的面光源的二次光源 (通常為照明光瞳中的規定的光強度分佈)。以下,將照明 光瞳中的光強度分佈稱作「光瞳強度分佈」。而且,照明光 瞳被定義為藉由照明光瞳與被照射面(於曝光裝置的情況 下為光罩(mask)或者晶圓(wafer))之間的光學系統的 作用,而使被照射面成為照明光瞳的傅襄葉變換面(F〇urier O transform surface )的位置。 來自一-人光源的光由聚光透鏡(con(jenser iens )而聚 光後,對形成著規定圖案(pattern)的光罩進行重疊照明。 已透過光罩的光經由投影光學系統而在晶圓上成像,從而 將光罩,案投影曝先(轉印)至晶圓上。形成於光罩上的 圖案經高積體化後,為了將該微細圖案準確地轉印至晶圓 上曰圓上獲得均勻的照度分佈是不可或缺的。 為了將光罩的微細圖案準確地轉印至晶圓上,而提出 201015239 JZZ/ /pu.doc 有如下技術:例如形成環帶狀或多極狀(二極狀、四極狀 等)的光瞳強度分佈,以使投影光學系統的焦點深度(focus depth)及解像能力(res〇luti〇n)提高(參照專利^獻^彡。 [先前技術文獻] [專利文獻] [專利文獻1] 美國專利公開第2006/0055834號公報 不管照明光瞳中所形成的光瞳強度分佈的形狀如 何’若於與作為最終的被歸面的晶圓上的各點相關的 瞳強度分佈中,失持著光軸而於規定方向上離開一間隔 一對區域的光较的差過大’ _案有可能會偏離所期望 的位置而曝光。 ’1 【發明内容】 、本發明的目的在於提供一種照明光學系統,其 被照射面上的各點相關的光㈣度分佈中、鱗光而、 規疋方向上朗—間隔的—對區域的光強度差進行調整 的在於提供—種可使用如下的照明光學 糸,並於適§的照明條件下進行良好的曝光的曝光裝置, =照明光學系統可對與被騎Φ上的各點㈣的光瞳強产 ’刀佈中、失持光_於規定方向上離關隔的—對二 光強度差進行調整。 '的 一為了解決上述問題,本發明的第1形態提供一種照明 光系統,以來自光源的光而對被照射面進行照明,复 徵在於包括: /、寺201015239 〇" / / j_uf.doc VI. Description of the Invention: [Technical Field] The present invention relates to an illumination optical system, an exposure apparatus, and a component manufacturing method. More specifically, the present invention relates to an illumination An optical system is suitable for an exposure apparatus for manufacturing a component such as a semiconductor element, an image pickup element, a liquid crystal display element, a thin film magnetic head or the like by a lithography step. [Prior Art] ® In such a typical exposure apparatus, The light emitted from the light source is formed as a secondary light source (generally an illumination light pupil) as a substantially surface light source formed of a plurality of light sources via a fly eye iens as an optical integrator Light intensity distribution. Hereinafter, the light intensity distribution in the illumination pupil is referred to as "the pupil intensity distribution". Moreover, the illumination pupil is defined as an illuminated surface by the action of an illumination system between the illumination pupil and the illuminated surface (a mask or a wafer in the case of an exposure device). It becomes the position of the F〇urier O transform surface of the illumination pupil. The light from the one-person light source is condensed by a condensing lens (consider iens), and the reticle forming the predetermined pattern is superimposed and illuminated. The light that has passed through the reticle is crystallized via the projection optical system. Imaging on the circle to expose (transfer) the reticle and the projection onto the wafer. After the pattern formed on the reticle is highly integrated, in order to accurately transfer the fine pattern onto the wafer 曰It is indispensable to obtain a uniform illuminance distribution on the circle. In order to accurately transfer the fine pattern of the reticle onto the wafer, the 201015239 JZZ/ /pu.doc has the following techniques: for example, forming a band or multipole The pupil intensity distribution of the shape (dipole, quadrupole, etc.) is such that the focus depth and the resolution of the projection optical system are improved (refer to the patent ^^^. [Patent Document] [Patent Document 1] US Patent Publication No. 2006/0055834, regardless of the shape of the pupil intensity distribution formed in the illumination pupil, as if it were on the wafer to be the final wafer. In the intensity distribution associated with each point, The light that is out of the optical axis and leaves a pair of spaced regions in a predetermined direction is too large. The case may be exposed to a desired position and is exposed. '1 SUMMARY OF THE INVENTION [0009] It is an object of the present invention to provide a The illumination optical system, which is adjusted in the light (four) degree distribution of the points on the illuminated surface, in the scale light, and in the direction of the radial direction - the difference in the light intensity difference of the area is provided by using the following Illumination optics, and exposure device with good exposure under suitable lighting conditions, = illumination optical system can be used to produce light in the knives of the points (4) on the Φ In order to solve the above problem, the first aspect of the present invention provides an illumination light system that illuminates an illuminated surface with light from a light source, in order to solve the above problem. The levy consists of: /, temple

201015239 / jjif.doc 分佈形成光學# 積分器更後側的昭明括先學積分器,且於較該光學 減光構件配置=形成光瞳強度分佈;以及 的位置,對朝向上述被照方或者正後方 上述減光構件以如下次^的點的光進行減光; 對朝向上述被照射面的沿即與上述減光構件 光的減光率相比’上述減;的1點的 的光的減光率較大。 于朝白另—周邊上的1點 本發明的第2形態提供 源的光而對被昭射面種…、月先子糸統,以來自光 八h t、射仃照明,其特徵在於包括: 積分系統’包括光學積分器,且於較該光學 積的照明光瞳中形成光瞳強度分佈;以及 的位置m配f ί上述_光_正前方或者正後方 切的方Wpi 1 .沿著對上述照明光學系統的光軸進行橫 ,VL ^ ° 方向的第1尺寸,以及大於該第1尺寸且 ’口者、述第1方向正交的第2方向的尺寸、即第2尺寸, 且 上述第2方向與上述照明光學系統的上述光轴相交。 本發明的第3形態提供一種照明光學系統,以來自光 源的^而對被_面進行酬,其特徵在於包括: 、,佈形成光學系統,包括光學積分器,且於較該光學 積分盗更後側的照明光瞳中形成光瞳強度分佈 ;以及 減光構件’配置於上述照明光瞳的正前方或者正後方 的位置’對朝向上述被照射面上的1點的光進行減光; 7 201015239 〇/pxx.doc 行切換’上述第勢與第2姿勢之間進 射面的沿著規定方:勢的:與周上邊r的 比,上述減光構件對朝向另一周邊上點止減光率相 較大,上述第2姿勢是與上述減光構件對朝減光率 上的上述1點的光的減光率相比 周邊 述另:周邊上的上述!點的光的減光=構件對朝向上 源的先:而對被照射面進行照明,其特括以來自光 j形成絲祕,純解積分$,且 光曈中形成光_度分佈;、叹 的位置ii胁上频縣_正前方或者正後方 =即光學系統的光轴進行= 〜刀卩叩罘1万向的第J尺寸,以及 著與上述第1方向正交的第2方向的尺寸了即第2 =沿 且該減光構件可圍繞與上述第〗方向及 的軸而旋轉。 I弟2方向正父 本發明的第5形態提供—種照明光學系統,以 源的光而對被照射面進行照明,其特徵在於包括:九 ρ分佈形成光㈣統,包括絲積分器,且於較該光 積分器更後側的照明光瞳中形成光瞳強度分佈;以及 可變部,可相對於與到達上述被照射面上的第】點的 光束相關的第1光瞳強度分佈,來改變與達到上述被昭射 面上的不同於上述第丨點的第2點的光束相關的第2触 201015239 32277pii.doc 強度分佈。 本發明的第6形態提供-種曝光裝置,: 包括用以對規定的圖案進行照明的第! 第嶋、第4形態、或者第5形態的照;態且 將上述規定關案曝光至感先性基板上。干㈣且 於包^發明的第7形態提供—種元件製造方法,其特徵在 ❹ Ο 曝光步驟,使用第6形態的曝光裝置 案曝光至上述感光性基板上;尤褒置將上述規定的圖 顯影步驟,對轉印著上述規定的圖_ 板進行顯影,將形狀與上述規定的圖 成於上述感光性基板的表面;以及〃〜的先罩層形 面進ΐΓί驟,經由上述光_對上述感光性基板的表 [發明之效果] 依照本發明的_態樣的照明光學系統包括 件,該減光構件配置於較光學穑八” 減先構 正前方弋去τ么+ Α 積刀盗更後侧的照明光瞳的 ⑺^者正後方的位置,_向 =減光。該減光構件以在第 照射面的沿著規定方向2^=與減光構件對朝向被 比,減光構件對朝向另一周=/點二光的減光率相 大,上述第2姿勢暑盥妓::的1點的光的減光率較 點的光、件對朝向一周邊上的上述1 的減先率相比,減光構件對朝向另-周邊上的上述 9 201015239201015239 / jjif.doc distribution forming optics # integrator further enclosing the integrator in the rear side, and in the optical dimming member configuration = forming the pupil intensity distribution; and the position, facing the above-mentioned illuminated or positive The rear light-reducing member is dimmed by the light of the following point; the light toward the surface to be irradiated is reduced by one point of the light reduction ratio of the light-reducing member light The light rate is large. In the second aspect of the present invention, the second aspect of the present invention provides light of the source, and is irradiated with light, and is illuminated by light, and is characterized by: The integration system 'includes an optical integrator and forms a pupil intensity distribution in the illumination pupil of the optical product; and the position m is f ί _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The optical axis of the illumination optical system is horizontally oriented, a first dimension in the VL^° direction, and a second dimension that is larger than the first dimension and in the second direction orthogonal to the first direction. The second direction intersects the optical axis of the illumination optical system. According to a third aspect of the present invention, there is provided an illumination optical system for reciprocating a surface of a light source, comprising: a cloth forming optical system including an optical integrator, and a pupil intensity distribution is formed in the illumination pupil on the rear side; and a position where the dimming member 'is disposed in front of or behind the illumination pupil' dimming light at one point toward the illuminated surface; 7 201015239 〇/pxx.doc Line switching 'The direction of the entrance surface between the above-mentioned first potential and the second posture along the predetermined side: the ratio of the potential to the upper edge r, the above-mentioned dimming member pair is stopped toward the other periphery The light-receiving phase is large, and the second posture is a dimming of the light at the above-mentioned point of the periphery of the light-reducing member with respect to the dimming rate of the light at the dimming rate. The component pair is directed toward the upper source: the illuminated surface is illuminated, and the special feature is to form a silk secret from the light j, the pure solution integral $, and the light _ degree distribution is formed in the pupil; the sigh position ii threat frequency County _ directly in front or directly behind = the optical axis of the optical system is carried out = ~ knife Fu knocking the J size of joint 1, and the size of the second direction is perpendicular to the first direction, i.e. along = 2 and the dimmer and the member may be rotatable about the axis in the first direction〗. The second aspect of the present invention provides a illuminating optical system that illuminates an illuminated surface with light of a source, and is characterized by comprising: a nine-p distribution forming light (four) system including a silk integrator, and Forming a pupil intensity distribution in an illumination pupil on a rear side of the optical integrator; and a variable portion that is obtainable with respect to a first pupil intensity distribution associated with a light beam reaching a first point on the illuminated surface, The intensity distribution of the second touch 201015239 32277pii.doc associated with the light beam reaching the second point on the illuminating surface different from the above-described second point is changed. According to a sixth aspect of the present invention, there is provided an exposure apparatus comprising: a unit for illuminating a predetermined pattern! The photograph of the third, fourth, or fifth form is exposed to the sensory substrate. The fourth aspect of the invention provides a method for producing a device, characterized in that the exposure step is exposed to the photosensitive substrate by using an exposure apparatus of a sixth aspect; and the predetermined pattern is further provided. a developing step of developing the above-described predetermined image plate, and forming a shape and a predetermined pattern on the surface of the photosensitive substrate; and a first cover layer surface of the 〃~, via the light _ pair The above-mentioned photosensitive substrate table [Effect of the invention] The illumination optical system according to the invention includes a member, and the light-reducing member is disposed in front of the optical 穑 ” 减 先 先 τ τ 么 么 么 么 + + + + 刀 刀 刀Further, the position of the rear side of the illumination pupil is (7), and the position of the light-reducing member is dimmed. The dimming member is compared with the direction of the pair of dimming members in the predetermined direction of the first irradiation surface, and the dimming is performed. The dimming rate of the light toward the other side = / point two is larger, and the dimming rate of the light at one point of the second posture is higher than that of the point, and the pair of the one facing the one on the periphery Compared with the reduction rate, the dimming member pair faces the above-mentioned 9 20 on the other periphery 1015239

/ /pn.d〇C 1點的光的減光率較小。 該情況下’減光構件以下述方式,實現沿著被照射面 的規定方向,減光率依照各種態樣而發生變化的多種減光 率特性。因此,依照上述態樣的照明光學系統中,於減光 構件的多種減光作用下’可對與被照射面上的各點相關的 光瞳強度为佈中、夹持光軸而於規定方向上空開間隔的一 對區域的光強度差進行調整。而且,本發明的曝光裝置中, 可使用照明光學系統而於適當的照明條件下進行^好的曝 光,進而可製造良好的元件’其中該照明光學系統對斑被 照射面上的各點相關的光瞳強度分佈中、失持光轴而於規 定方向上隔開-間隔的-對區域的光強度差進行調整。 為讓本發明之上述特徵和優點能更明顯易懂,下文特 舉實施例,並配合所附圖式作詳細說明如下。 【實施方式】 基於附圖對本發明的實施形態進行說明。圖丨是概略 性地表示本發明的實施形態的曝光裝置的構成的圖。在圖 1中,分別沿著作為感光性基板的晶圓%的曝光面(轉印 面)的法線方向設定Z軸,於晶圓w的曝光面内沿著與 圖、1的紙面平行的方向設定Y軸,且於晶圓1的曝光面 内沿著與圖1的紙面垂直的方向設定X軸。 參照圖1,在本實施形態的曝光裝置中,自光源i供 給曝光光束(照明光夕作為光源丨,可使用例如供給193nm 的波長的光的ArF準分子雷射(excimer l^er)光源或供 給248mn的波長的光的KrF準分子雷射光源等。自光源ι 201015239 / /pif.doc 射出的光束藉由整形光學系統2 J2後,例如經由環帶照明用的繞射光學元件3而入: 至…、透鏡(af〇eal lens ) 4。 無焦透鏡4是被設定為其前侧位置 ==致一致、且其後側焦點位置與围中 ❹ 件3是依據在基板上形成的曝光光束(照明上) 勺波長私度的間距具有的階差而構成,且具有使入射光 望:角度繞射的作用。具體而言’環帶照明用的繞 射1學讀3具有如下魏,即#具有矩形狀的剖面的平 了先束人射時,於遠場(知field)(或者夫浪禾費 (F_h〇fer)繞射區域)形成環帶狀的光強度分佈。 因此入射至繞射光學元件3的大致平行的光束,於 無焦透鏡4的級面上形成環帶狀的光強度分佈之後,以 環帶狀的角度分佈而自無焦透鏡4射出。經過無焦透鏡斗 的光’經由可用於改變讀(^ =照明光學系統的光罩 側數值孔徑/投影光學系統的光罩側數值孔徑)的可變焦距 透鏡(zoom lens) 7,而人射至作為光學積分器的微型複 眼透鏡(或者複眼透鏡)8。微型複眼透鏡8是由例如縱橫 且稠密地排列的多個具有正折射力(p〇sitive refracting power)的微小透鏡所構成的光學元件,且藉實施平行平面 板蝕刻處理而形成微小透鏡群所構成。 構成微型複眼透鏡的各微小透鏡,要小於構成複眼透 鏡的各透鏡元件。而且,微型複眼透鏡與由彼此隔離的透 11 201015239 /pil.doc 鏡讀所構成的舰透鏡不同,乡錄小魏(微小折 面)彼此並非隔離是形成為一體。然而,在將具有正折 力的透鏡元件縱橫配置的方面而言,微型複眼透鏡與複眼 透鏡相同,為波前區分(divisi〇n 〇f wavefr〇nt)型的光學 積分器(optical integrator)。此種微型複眼透鏡8的構成^ 作用,揭示於例如美國專利第6741394號公報中。再者, 作為微型複眼透鏡8,亦可使用例如柱狀(cyUndrical)微 型複眼透鏡。柱狀微型複眼透鏡的構成及作用,揭示於例 如美國專利第6913373號公報中。此處,以參照的方式引 用美國專利第6741394號公報以及第6913373號公報的教 ® 示。 規定面5的位置,是配置於可變焦距透鏡7的前侧焦 點位置或該前侧焦點位置的附近,微型複眼透鏡8的入射 面是配置於可變焦距透鏡7的後側焦點位置或者該後側焦 點位置的附近。換言之,可變焦距透鏡7將規定面5與&/ /pn.d〇C The light dimming rate at 1 point is small. In this case, the light-reducing member realizes a plurality of dimming characteristics in which the dimming rate changes in accordance with various aspects along a predetermined direction of the illuminated surface in the following manner. Therefore, in the illumination optical system according to the above aspect, under the plurality of dimming actions of the light-reducing member, the intensity of the pupil associated with each point on the illuminated surface can be in the cloth and the optical axis is held in a predetermined direction. The light intensity difference of a pair of regions spaced apart from each other is adjusted. Further, in the exposure apparatus of the present invention, the illumination optical system can be used to perform good exposure under appropriate illumination conditions, thereby producing a good component in which the illumination optical system is associated with each point on the spot on which the spot is illuminated. In the pupil intensity distribution, the light intensity difference between the regions in which the optical axis is lost and the distance is spaced apart in a predetermined direction is adjusted. The above described features and advantages of the present invention will become more apparent from the description of the appended claims. [Embodiment] An embodiment of the present invention will be described based on the drawings. Fig. 丨 is a view schematically showing the configuration of an exposure apparatus according to an embodiment of the present invention. In FIG. 1, the Z-axis is set along the normal direction of the exposure surface (transfer surface) of the wafer % of the photosensitive substrate, and is parallel to the plane of the paper of FIG. 1 in the exposure surface of the wafer w. The Y axis is set, and the X axis is set in a direction perpendicular to the paper surface of FIG. 1 in the exposure surface of the wafer 1. Referring to Fig. 1, in the exposure apparatus of the present embodiment, an exposure light beam is supplied from the light source i (the illumination light is used as the light source 丨, and for example, an ArF excimer laser light source that supplies light of a wavelength of 193 nm or a KrF excimer laser light source that supplies light of a wavelength of 248 nm, etc. The light beam emitted from the light source ι 201015239 / /pif.doc is passed through the shaping optical system 2 J2, for example, via a diffractive optical element 3 for ring illumination : a... lens (af〇eal lens) 4. The afocal lens 4 is set to have its front side position == uniform, and its rear side focus position and the surrounding element 3 are based on the exposure formed on the substrate. The beam (illumination) is formed by the step of the wavelength of the spoon, and has the effect of making the incident light: angle diffraction. Specifically, the diffraction 1 learning 3 for the ring illumination has the following Wei, That is, when a flat-shaped beam having a rectangular cross section is shot, the light intensity distribution in the far-field (or the F_h〇fer diffraction region) is formed in the far field (the F-h〇fer diffraction region). a substantially parallel beam of diffractive optical element 3, in a focusless lens After the ring-shaped light intensity distribution is formed on the step surface of 4, it is emitted from the afocal lens 4 in an angular distribution of the ring-shaped lens. The light passing through the afocal lens bucket can be used to change the reading (^ = illumination optical system A zoom lens of the reticle side numerical aperture / reticle side numerical aperture of the projection optical system) and a human eye to a micro fly's eye lens (or fly eye lens) 8 as an optical integrator 8. Micro fly-eye lens 8 The optical element is composed of, for example, a plurality of microlenses having a positive refractive index and a densely arranged refracting power, and is formed by forming a microlens group by performing a parallel plane etching process. Each of the tiny lenses of the lens is smaller than the lens elements constituting the fly-eye lens. Moreover, the micro fly-eye lens is different from the ship lens formed by the mirrors of the 11 201015239 /pil.doc, which is isolated from each other. The two are not isolated from each other. However, in terms of the longitudinal and horizontal arrangement of the lens element having the positive folding force, the micro fly-eye lens and the compound eye are transparent. Similarly, it is an optical integrator of a wavefront type (divisi〇n 〇f wavefr〇nt) type. The structure of such a micro fly-eye lens 8 is disclosed, for example, in U.S. Patent No. 6741394. For example, a cylindrical (cyUndrical) micro fly-eye lens can be used as the micro fly's eye lens 8. The configuration and action of the columnar micro fly's eye lens are disclosed, for example, in U.S. Patent No. 6,913,373. The teachings of Japanese Patent No. 6741394 and Japanese Patent No. 6913373. The position of the predetermined surface 5 is disposed in the vicinity of the front focus position of the variable focal length lens 7 or the front focus position, and the incident surface of the micro fly-eye lens 8 is disposed at the rear focus position of the variable focal length lens 7 or Near the back focus position. In other words, the variable focal length lens 7 will define the face 5 &

型複眼透鏡8的入射面,實質上配置成傅裏葉變換的關 係’即將無焦透鏡4的光瞳面與微型複眼透鏡8的入射面 配置為在光學上大致共軛。 G 因此’與無焦透鏡4的光瞳面相同地,於微型複眼透 鏡8的入射面上,形成著例如以光軸ΑΧ為中心的環帶狀 - 的照野。該環帶狀的照野的整體形狀依存於可變焦距透鏡 _ 7的焦距而相似性地改變。微型複眼透鏡8的各微小透鏡 的入射面(即單位波前區分面)為例如沿著z方向具有長 邊且沿著X方向具有短邊的矩形狀,且為與光罩M上所 12 201015239 應形成的照明區域的形狀(進而晶圓w上所應形成的曝光 區域的形狀)相似的矩形狀。 入射至微型複眼透鏡8的光束被二維地分割後,於該 微型複眼透鏡8的後側焦點面或者該後側焦點面的附近的 位置(進而照明光瞳的位置)上,形成著具有與微型複眼 透鏡8的入射面上所形成的照野大致相同的光強度分佈的 一次光源,即形成著以光軸AX為中心的環帶狀的實質上 的面光源所構成的二次光源(光瞳強度分佈)。於微型複眼 透鏡8的後側焦點面或者該後側焦點面的附近配置著遮光 單凡9。將於下文對遮光單元9的構成及作用進行說明。 而且,於微型複眼透鏡8的後侧焦點面或者該後側焦 點面的附近,視需要而配置著照明孔I光闌(aperturest〇i〇 (未圖示)’該七、明孔役光闌具有與環帶狀的二次光源相對 應的環帶狀的孔徑部(透光部)。照明孔徑光闌構成為相對 於照明光路而插拔自如,且構成能夠與具有大小以及形狀 不同的孔徑部的多個孔徑光闌進行切換。作為孔徑光闌的 鲁 _方式,例如可使用眾所周知的轉塔(t刪t)方式或滑 動)slide)方式等。照明孔徑光闌配置於與下述的投影光 學系統PL的入射光瞳面,在光學上大致共輛的位置,並 對有助於一次光源的照明的範圍進行規定。 ^經過微型複眼透鏡8以及遮光單元9的光,經由聚光 光子糸統1 〇而對光罩遮态11 (mask biin(j)進行重疊照明。 由此,於作為照明視場光闌的光罩遮器u上,形成著與微 型複眼透鏡8的微小透鏡的形狀及焦距相對應的矩形狀的 13 201015239 32277pil.doc 照野。經過光罩遮器11的矩形狀的孔徑部(透光部)的先, 經由前侧透鏡群12a與後側透鏡群12b所構成的成像光學 系統12 ’而對形成著規定的圖案的光罩Μ進行重疊照a月。 即,成像光學系統12將光罩遮器11的矩形狀孔徑部的像 形成於光罩Μ上。 於保猗隹尤旱十谷Mb上的无罩Μ上形成著應轉印的 圖案’對圖案區域全體中的、沿著Υ方向具有長邊且沿著 X方向具有短邊的矩形狀(狹縫狀)的圖案區域進行照明。 已透過光罩Μ的圖案區域的光經由投影光學系統pL,而 於保持在晶圓平台WS上的晶圓(感光性基板)w上形成 光罩圖案的像。即,以與光罩Μ上的矩形狀照明區域為 學,,應的方式,亦於晶圓W上在沿著γ方向具有長邊 且沿著X方向具有短邊的矩形狀的靜止曝光區域 光區域)中形成著圖案像。 曝 如此’依照所謂的步進掃描(卿and _)方 ^又景學系統PL的與光|^Αχ正交的平面(灯平工 ,沿著X方向(掃描方向)使光罩 Μ 曰 =圓亦即使光罩Μ與晶圓w同步地移^ (掃描阳:台 ^ 有與靜㈣絲料尺寸^等的 的ί光插量 本實Γ丄二:光區域)掃描曝光光罩圖案。 形成的1光w上所述,將藉由微型複眼透鏡8所 照射刪統(2,的被 置的先罩JVi進行柯勒照明(K〇hIer 201015239 32277pif.doc illumination)。因此,形成著二次光源的位置與投影光學系 統PL的孔徑光闌AS的位置在光學上共軛,從而可將二次 光源的形成面稱作照明光學系統(2〜12)的照明光产面。 典型的是’相對於照明光曈面’被照射面(配置著光 的面’或者將投影光學系統PL包括在内一併考慮為照明 光學系統時’為配置著晶圓W的面)而成為光學^的&裏 葉變換面。 ❹ ❹ 再者,所謂光曈強度分佈,是指照明先聲备 12)的照明光_、或者與該㈣光瞳面在光學上共輛的 面上的光強度分佈(亮度分佈)。當微型舰透鏡8 ^波前 區分數相對較大時,微型魏魏8的人射面上所形成的 總體光強度分佈、個二錢__錢度分佈(光 瞳強度分佈)表現出高相關性。因此,亦可將微型複眼透 鏡8的人射面及與獻射面在林上共㈣面上的光強度 分佈,亦可稱作光瞳強度分佈。® 1的構成中,繞射光學 瓜件3、無线鏡4、可·距透鏡7、 8構成分佈形成光學系統,該分佈形成光 複眼透鏡8更後__光瞳中形成光瞳強度分佈 (-二Γ帶:Γ的繞射光學元件3,而將多極照明 =設=光::照明等)用的繞射光學元件 極照明用的繞射絲元件此來進❹極照明。多 四極狀、人極料)物均❹罐二極狀、 %攻度分佈。因此,經過多極照明 15 201015239 /pn.doc 用的繞射光學元件的光束,會在微型複眼透鏡8的入射面 上,形成由例如以光軸人乂為中心的多個規定形狀(圓弧 狀、圓形狀等)的照野所構成的多極狀的照野。其結果為, 在微型複眼透鏡8的後侧焦點面或者該後侧焦點面的附 近,亦形成著與所述入射面上所形成的照野相同的多極狀 的二次光源。 而且,可代替環帶照明用的繞射光學元件3,而將圓 形%、明用的繞射光學元件(未圖示)設定於照明光路中, 藉此來進行通常的圓形照明。圓形照明用的繞射光學元件 具有如下功能,即當具有矩形狀的剖面的平行光束入射 時,在遠場上形成圓形狀的光強度分佈。因此,經過圓形 照明用的繞射光學元件的光束會在微型複眼透鏡8的入射 面上,形成例如以光軸AX為中心的圓形狀的照野。其結 果為,在微型複眼透鏡8的後側焦點面或者該後側焦點面 的附近,亦形成著與所述入射面上所形成的照野相同的圓 形狀的二次光源。又,可代替環帶照明用的繞射光學元件 3,而將具有適當特性的繞射光學元件(未圖示)設定於照 明光路中,藉此來進行多種形態的變形照明。作為繞射光 學元件3的切換方式,可使用例如眾所周知的轉塔方式或 滑動方式等。再者,作為此種繞射光學元件,揭示於例如 美國專利第5850300號公報以及美國專利公開第 2008/0074746號公報中。此處,以參照的方式引用美國專 利第5850300號公報以及美國專利公開第2008/0074746號 公報的教示。 16 ii.doc 201015239 以下的說明中,4 了便於理解本實施形態的作用效 於微型複眼透鏡8的後侧焦點面或者該後側焦點 产強产八=明t瞳中’形成著如圖2所示的四極狀的光 一次^光源)20。而且,將一對遮光構件91 20為遮光單元9㈣狀四極㈣光㈣度分佈 土# \面的正後方。而且,以下的說明中僅稱作「照明 ❹ ❹ 2里」時’是指微型複眼透鏡8的後難點面或者該後側 焦點面的附近的照明光瞳。 參照圖2 ’照明光瞳上所形成的四極狀的光瞳強 弧Γ的光軸AX而於x方向上隔開間隔的-對圓 3T狀的實質上的面光源(以下僅稱作「面光源」)2如、施, 光軸AX而於Z方向上隔開間隔的-對圓弧狀的實 質的面光源20c、20d。再者,照明光瞳中的又方向是微 型複眼透鏡8的矩形狀的微小透躺短邊方向,且對應於 ;圓W崎财向。心,_光瞳巾的Z方向是微型 複眼透鏡8的矩雜的微小透賴長邊方向,且對應於與The incident surface of the fly-eye lens 8 is substantially arranged to have a Fourier transform relationship. The pupil plane of the afocal lens 4 and the incident surface of the micro fly's eye lens 8 are arranged to be optically substantially conjugate. Therefore, in the same manner as the pupil plane of the afocal lens 4, an eyeglass-shaped field centering on the optical axis 形成 is formed on the incident surface of the micro-folding lens 8. The overall shape of the band-shaped field is similarly changed depending on the focal length of the variable focal length lens _7. The incident surface of each of the microlenses of the micro fly-eye lens 8 (that is, the unit wavefront discrimination surface) is, for example, a rectangular shape having a long side along the z direction and a short side along the X direction, and is on the photomask M 12201015239 The shape of the illumination area to be formed (and thus the shape of the exposed area to be formed on the wafer w) is similarly rectangular. The light beam incident on the micro fly's eye lens 8 is two-dimensionally divided, and is formed on the rear focus surface of the micro fly-eye lens 8 or the position near the rear focus surface (and thus the position of the illumination pupil). A primary light source having substantially the same light intensity distribution in the field of view formed on the incident surface of the micro fly's eye lens 8, that is, a secondary light source formed of a ring-shaped substantially surface light source centered on the optical axis AX (light)瞳 intensity distribution). A light-shielding 9 is disposed in the vicinity of the rear focal plane of the micro fly's eye lens 8 or in the vicinity of the rear focal plane. The configuration and action of the shading unit 9 will be described below. Further, in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8, an illumination aperture I (optional) is disposed as needed (the aperturest aperture is not shown). An annular band-shaped aperture portion (transmission portion) corresponding to the endless belt-shaped secondary light source. The illumination aperture stop is configured to be detachable from the illumination optical path, and is configured to be capable of being different from the aperture portion having a different size and shape. A plurality of aperture stops are switched. As the aperture method of the aperture stop, for example, a well-known turret or slide method can be used. The illumination aperture stop is disposed at an entrance pupil plane of the projection optical system PL to be described below, and is optically substantially in a common position, and defines a range that contributes to illumination of the primary light source. ^The light passing through the micro fly-eye lens 8 and the light-shielding unit 9 is superimposed on the mask mask 11 (mask biin(j) by the concentrating photonic system 1 由此. Thus, the light as the illumination field stop The cover mask u is formed in a rectangular shape corresponding to the shape and focal length of the microlens of the micro fly-eye lens 8. The rectangular aperture portion (transmission portion) passing through the mask mask 11 is formed. First, the mask 形成 formed with a predetermined pattern is superimposed for a month via the imaging optical system 12' formed by the front lens group 12a and the rear lens group 12b. That is, the imaging optical system 12 has a mask. The image of the rectangular aperture portion of the obstructor 11 is formed on the mask 。. The pattern to be transferred is formed on the maskless enamel on the Mt. A rectangular (slit-like) pattern region having a long side and having a short side along the X direction is illuminated. Light that has passed through the pattern region of the mask 经由 is held on the wafer platform WS via the projection optical system pL. Wafer pattern formed on the wafer (photosensitive substrate) w The image of the case, that is, the rectangular illumination area on the reticle, is also a rectangular shape having a long side along the γ direction and a short side along the X direction on the wafer W. A pattern image is formed in the light area of the still exposure region. Exposure is based on the so-called step-scan (clear and _) square and the plane of the system PL and the light | ^ Αχ orthogonal plane (light leveling, along the X direction (scanning direction) to make the mask Μ 曰 = The circle also scans the exposure mask pattern even if the mask Μ is moved in synchronization with the wafer w. (Scanning y: 台 ^ 有 有 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( As described above, the formed light w is irradiated by the micro fly-eye lens 8 (the second cover of the set JJ is subjected to Kohler illumination (K〇hIer 201015239 32277 pif.doc illumination). The position of the secondary light source is optically conjugate with the position of the aperture stop AS of the projection optical system PL, so that the formation surface of the secondary light source can be referred to as the illumination light surface of the illumination optical system (2 to 12). The 'irradiation surface' of the illumination surface (the surface on which the light is disposed) or the projection optical system PL is included as the surface on which the wafer W is disposed in consideration of the illumination optical system. &The inner blade transform surface. ❹ ❹ Furthermore, the so-called pupil intensity distribution refers to the lighting sound preparation 1 2) illumination light _, or light intensity distribution (brightness distribution) on the surface of the (four) pupil plane optically shared. When the micro-ship lens 8 ^ wavefront region score is relatively large, micro Wei Wei 8 The overall light intensity distribution formed on the surface of the person, and the distribution of the money (the intensity distribution of the pupil) show a high correlation. Therefore, the human face and the projection of the micro fly-eye lens 8 can also be used. The light intensity distribution on the surface of the forest is also called the pupil intensity distribution. In the configuration of the ® 1, the diffractive optical member 3, the wireless mirror 4, and the lens 7 and 8 can be distributed. In the optical system, the distribution forms the pupil eye lens 8 and the pupil intensity distribution is formed in the _ 瞳 瞳 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - The diffractive optical element for diffractive optical element pole illumination is used to enter the bungee illumination. The multi-quadrupole and the human pole material are all in a two-pole shape and a % offset distribution. Therefore, the light beam passing through the diffractive optical element for the multi-pole illumination 15 201015239 /pn.doc forms a plurality of predetermined shapes (circular arcs) centered on the optical axis anthropomorphism on the incident surface of the micro fly-eye lens 8 A multi-polar field formed by the field of the shape, the shape of the circle, etc. As a result, in the vicinity of the rear focal plane or the rear focal plane of the micro fly's eye lens 8, a multipolar secondary light source similar to the field formed on the incident surface is formed. Further, instead of the diffractive optical element 3 for the endless belt illumination, a circular or optical diffractive optical element (not shown) can be set in the illumination optical path, thereby performing normal circular illumination. The diffractive optical element for circular illumination has a function of forming a circular light intensity distribution on the far field when a parallel beam having a rectangular cross section is incident. Therefore, the light beam passing through the diffractive optical element for circular illumination forms a circular field of illumination on the incident surface of the micro fly's eye lens 8, for example, centered on the optical axis AX. As a result, a circular secondary light source having the same shape as the field formed on the incident surface is formed in the vicinity of the rear focal plane or the rear focal plane of the micro fly's eye lens 8. Further, instead of the diffractive optical element 3 for the endless belt illumination, a diffractive optical element (not shown) having appropriate characteristics can be set in the illumination light path, thereby performing various forms of anamorphic illumination. As the switching method of the diffractive optical element 3, for example, a well-known turret method, a sliding method, or the like can be used. Further, such a diffractive optical element is disclosed in, for example, U.S. Patent No. 5,850,300 and U.S. Patent Publication No. 2008/0074746. Here, the teachings of U.S. Patent No. 5,850,300 and U.S. Patent Publication No. 2008/0074746 are incorporated herein by reference. 16 ii.doc 201015239 In the following description, 4 is useful for understanding that the effect of the present embodiment is effective on the rear focus surface of the micro fly-eye lens 8 or the rear side focus production and production is as follows: The quadrupole light shown is once light source 20). Further, the pair of light blocking members 91 20 are directly rearward of the light shielding unit 9 (four)-shaped four-pole (four) light (four) degree distribution soil # \ surface. In the following description, the term "lighting ❹ 2" is used to mean the illumination aperture of the rear difficult surface of the micro fly's eye lens 8 or the vicinity of the rear focus surface. Referring to Fig. 2, a substantially planar light source of a pair of 3T-shaped circles spaced apart in the x direction from the optical axis AX of the quadrupole optically intense arc formed on the illumination pupil (hereinafter simply referred to as "face" The light source ") 2 is a pair of substantially planar light sources 20c and 20d which are spaced apart in the Z direction by the optical axis AX. Further, the direction in the illumination pupil is the rectangular micro-transparent short-side direction of the micro fly-eye lens 8, and corresponds to the circle W. The Z direction of the heart, the 瞳 light towel is the microscopic long-direction direction of the moment of the micro fly-eye lens 8, and corresponds to

晶圓W的掃描方向正交的掃描正交方向(晶® W_^Y 方向)。 、广圖3所*,於晶圓w上形成著沿γ方向具有長邊 且沿Χ方向具有短邊的矩形狀的靜止曝光區域ER,且以 與該靜止曝光區域ER相對應的方式,於光罩Μ上 矩形狀的卿區域(相示)。此處,人槪靜止曝光區域 内的1點的光於照明光瞳中所形成的四極狀的光瞳強 又分佈’是並不依存於入射點的位置而具有彼此大致相同 17 201015239 jzz/ /pu.doc =5有5:依?成四極狀的光曈強度分佈的各面光源的 光強度有%會依存於入射點的位置而有所不同。 作為比較間單的-例而考慮如下情況,即入射至靜止 曝光區域ER内的周邊的點p2、p3的光,於照明光瞳中分 別形成圖4、目5所示意性地表示的四極狀的光瞳強度分 佈。即,入射至自靜止曝光區域ER内的中心·點P1起而於 +Y方向上空開間隔的周邊的點P2的光所形成的四極狀的 光瞳強度分佈22中’如圖4所示,面光源22&、22b以及The scanning direction of the wafer W is orthogonal to the scanning orthogonal direction (crystal W_^Y direction). In the wide view 3, a rectangular static exposure region ER having a long side in the γ direction and a short side in the Χ direction is formed on the wafer w, and is corresponding to the static exposure area ER. The mask is covered with a rectangular shaped area (shown). Here, the four-pole light formed by the light in the illuminating pupil in the illuminating pupil is barely distributed and is substantially independent of each other depending on the position of the incident point. 17 201015239 jzz / / Pu.doc = 5 has 5: The light intensity of each surface light source in a quadrupole-like pupil intensity distribution varies depending on the position of the incident point. As an example of the comparison, it is considered that the light incident on the peripheral points p2 and p3 in the still exposure region ER forms a quadrupole schematically shown in FIG. 4 and FIG. 5 in the illumination pupil. The intensity distribution of the pupil. In other words, as shown in FIG. 4, the quadrupole pupil intensity distribution 22 formed by the light passing through the center P1 in the stationary exposure region ER and at the point P2 around the space in the +Y direction is as shown in FIG. Surface light sources 22&, 22b and

22d的光強度彼此大致相等’且面光源22e的光強度大於 其他面光源的光強度。 而且,入射至自靜止曝光區域ER内的中心點ρι起而 於-Y方向上空開間隔的周邊的點P3的光所形成的四極狀 的光瞳強度分佈23中,如圖5所示,面光源23a、23b以 及23c的光強度彼此大致相等,且面光源23d的光強度大 於其他面光源的光強度。如此,若在與晶圓w上的各點相 關的光瞳強度分佈中,夾持光軸Αχ而在z方向(與掃描The light intensities of 22d are substantially equal to each other' and the light intensity of the surface light source 22e is greater than that of the other surface light sources. Further, in the quadrupole pupil intensity distribution 23 formed by the light passing through the center point ρ in the still exposure region ER and spaced apart at the point P3 in the -Y direction, as shown in FIG. The light intensities of the light sources 23a, 23b, and 23c are substantially equal to each other, and the light intensity of the surface light source 23d is greater than the light intensity of the other surface light sources. Thus, if in the pupil intensity distribution associated with each point on the wafer w, the optical axis is clamped in the z direction (and scanned)

正交方向(晶圓W上的γ方向)相對應的方向)上隔開 間隔的一對區域的光強度的差過大,則於曝光照射區域(於 圖4以及圖5所示的示例的情況下為與周邊點p2、p3相 對應的周邊的位置)上曝光的圖案有可能會偏離所期望的 位置。 本實施形態中,具備遮光單元9來作為調整機構,以 對在與周邊點、P3相關的光瞳強度分佈22、23中,夾 持光軸AX而於Z方向上空開間隔的一對面光源22(:與22(1 18 201015239 / /pif.doc 面光源23e與说之間的光強度的差進行 \m2 6 ^ : ® # 90 ; f遮先構件9卜92 ;安裝在各遮光構件91、9 f f X方向上延伸的旋轉軸93 ;使旋轉軸93旋轉的^ 部4,旋轉自如地支撑著旋轉轴犯的支撐部% .以 =動部94的旋轉軸93的旋轉進行控制的旋轉心 ❹ 驅動部94以及支撐部95安裝 i細而▲ 於2方向上關間隔配置著。更 Γ矩形狀的外形形狀的平行平面板,如圖二;; 自失持光軸ΑΧ而於ζ方向上隔開間隔的-對= =20e以及施的光發揮作用的方式而 = 單元9不對照明光瞳上所形成的四極狀^ 中的、夾持光轴AX而於X方向上隔開間隔 的對面光源20a以及20b發揮作用。 =光單以,根據來自旋轉控制系統% _令 ㈣的姿勢分別改變。即,各遮:二遮=1 微魏眼透鏡8的矩形狀的單位波前區分面= 邊方向(X方向)延伸的旋轉軸93而旋韓。 的 $,92沿著γζ平面具有__剖面’且盘$ 則區为面的短邊方向即Χ方向平行地延伸著。,、早位波 19 201015239 32277pif.doc 圖7以及圖8是說明各遮光 7以及圖8中,為了便於理d:用的圖。圖 具有與遮光構件91、92相同的 的作用,而說明 f光構 =97,在處於各特徵性的姿勢動作的單個 中、又疋為如下姿勢’即遮光 、、声J二乍用。圖7 的中讀穿過雜AX,且遮光構件方向(X方向) (沿著yz平面的剖面)的長^ i开邊的橫剖面 平行的方(町稱方向) 〇 區域::二中:二:::達晶圓w上的靜止曝光 部的中心簡,的光,__====徑 遮蔽的光㈣少m物《=== 區域ER内的周邊點p2、p3的光,即到 光When the difference in light intensity between the pair of regions spaced apart in the orthogonal direction (the direction corresponding to the γ direction on the wafer W) is too large, the exposure region is exposed (in the case of the examples shown in FIGS. 4 and 5). The pattern exposed on the lower side corresponding to the peripheral points p2 and p3 may deviate from the desired position. In the present embodiment, the light shielding unit 9 is provided as an adjustment mechanism for sandwiching the optical axis AX in the pupil intensity distributions 22 and 23 associated with the peripheral points and P3, and the pair of surface light sources 22 are spaced apart in the Z direction. (: and 22 (1 18 201015239 / /pif.doc surface light source 23e and the difference between the light intensity is carried out \m2 6 ^ : ® # 90 ; f cover member 9 92; installed in each light-shielding member 91, 9 ff The rotation shaft 93 extending in the X direction; the portion 4 that rotates the rotation shaft 93 rotatably supports the support portion % of the rotation shaft. The rotation center controlled by the rotation of the rotation shaft 93 of the movement portion 94 ❹ The driving portion 94 and the supporting portion 95 are mounted thin and ▲ are arranged at intervals in the two directions. The parallel planar plate having a rectangular outer shape is as shown in FIG. 2; and the optical axis is lost in the ζ direction. The interval--==20e and the way the applied light works. The unit 9 does not face the quadrupole formed on the illumination pupil. The opposite side of the light source AX is spaced apart in the X direction. 20a and 20b work. = Light sheet, according to the posture from the rotation control system % _ (4) That is, each mask: two masks = a rectangular unit wave frontal surface of the micro-eye lens 8 = a rotation axis 93 extending in the side direction (X direction) and a rotation of the 。 的 plane. The short side direction having the __section' and the disc $ is the surface, that is, the Χ direction extends in parallel. The early position wave 19 201015239 32277pif.doc FIGS. 7 and 8 are diagrams for explaining the shading 7 and FIG. 8 for The figure has the same function as the light-shielding members 91 and 92, and the f-light structure=97 is shown, and in the single posture of each characteristic posture, the posture is as follows: In the case of the sound J, it is used in the middle of the cross section of the cross section of the shading member (X direction) (the section along the yz plane) of the shading member in Fig. 7 (the direction of the town) 〇 area:: two: two::: the center of the static exposure part on the wafer w is simple, the light, __==== the light blocked by the path (four) less m thing "=== the peripheral point in the area ER P2, p3 light, that is, light

Q ^部的周邊點P2,、P3,的光,相對於遮光構件的1 光睹側的端面上的XZ平面而以相對較大的入射角度二 射,因此被遮光構件97遮蔽的光的量相對較多。又 以下,為了簡化說明,使與靜止曝光區域£11内 邊點P2相對應的周邊點m立於光罩遮器u #孔後部二 +Z方向侧,且使與靜止曝光區域]£]1内的周邊點對 應的周邊點P3’位於_Z方向侧。再者,圖7中,僅表示势 達中心點P1’以及周邊點P2·的光被遮光構件97遮蔽^产 況,但明確的是到達周邊點!>3,的光亦與到達周邊點p2,: 光同樣被遮光構件97遮蔽。 、 20 ix'.doc 201015239 軸僅二二定為自平行姿勢起,, 況下,如圖8所示ft w的旋轉姿勢」)。該情 的中心點η的光,即=的靜止曝光區域欣内 :1::被遮光構件97遮蔽的部分 到達靜止曝光i^ERt Λ的部分报少。 罩遮器η的孔㈣的周邊財^:Ρ3 即到達光 部分最多。再者,省略了圓示,= 構 的 ===僅旋轉,姿勢、即-Θ二 運先罩遮态11的孔徑部的中心點ρ 構件97遮蔽的部分會相對 邊H光 被遮光構===多’而— 用的圖圖^Γ由件構成的遮光單元的減光作 源的減二用圖9的遮光單元對一對面光 止·^乍用的大小的圖。作為圖9中的一例,將笫]t ====遮光構㈣設‘ =;:Γ光源減光作用非常小而第工 1 21 201015239 /pi/.doc 向細長地延伸的陰影區域的z方向上的寬度尺寸,來示意 性地表示遮光單元9的滅光作用的大小。 而且,如圖10的左側所示,與周邊點P2相關的四極 狀的光瞳強度分佈中,第1遮光構件91對面光源22c的減 光作用相對較大,而第2遮光構件92對面光源22d的減光 作用非常小。而且,如圖1 〇的右侧所示,與周邊點P3相 關的四極狀的光瞳強度分佈中,第1遮光構件91對面光源 23c的減光作用相對較大,第2遮光構件92對面光源23d 的減光作用最大。 參 再者’圖9中,參照符號B3表示面光源2〇c (21c〜 23c)的沿著Z方向的最外緣的點(參照圖2),參照符號 34表示面光源2〇d (21d〜23d)的沿著z方向的最外緣的 點(參照圖2)。進而,以參照符號Bi表示面光源20a(21a 3a)的沿著X方向的最外緣的點,以參照符號 , 面光源20b (21b〜23b)的沿著X方向的最外緣的點。如 上所述,來自面光源20a(21a〜23a)以及面光源2〇b(21b 〜23b)的光不受遮光單元9的減光作用的影響。 而且,如圖11所示,當將第1遮光構件91設定為-^旋轉姿勢、且將第2輕構件%設定為+㈣旋轉姿 避朵播P1㈣的四極狀的紐強度分佈中,第1 件91對面先源2le的減光作用、以及第2遮光構件 關白r四m的減光作用均相對較大。與周邊點p2相 ^第1遮光構件91對面光源 ' 取 而第2遮光構件92對面光源22d的 22 201015239 JZZ / /pif.doc 減小。與周邊點P3相關 分佈中,第1魅構件91對㈣源23e 強度 小,而第2遮光構件92對面光丨 九作用砟常 而曰原、23d的減光作用最大 而且’如圖12所不’當將第1遮光構件91 =。 Θ的旋轉姿勢、且將第2遮光構件兇嗖 故疋為+ 勢時,與中心點P1相關的四極狀的产、八饮的旋轉姿 遮光構件91對面光源21c的減#你 又刀佈中,第χ _ 减先作用、以及第2 ❹ ❹ 92對面光源別的減光作用均相對較大。與周邊 關的四極狀的光曈強度分佈中,第!遮光構件91對面= 瓜的減光作用非常小,而第2遮光構件%對面光源先^ 的減光_最大。期雜P3 _的四 ^瞳 分佈中,第!遮光構件91對面光源23e的減光度 而第2遮光構件92對面光源23d的減光作用非常小。 如此,藉由將例如第丨遮光構件91設定為的旋轉 姿勢與平行姿勢之_適當的_θ,顺勢,且將第2 遮光構件92奴為+㈣旋轉姿勢與平行姿勢之間的適當 的+π的旋轉姿勢,而可對夾持光軸ΑΧκΖ方向上隔開 間隔的一對面光源22c與22d之間、以及一對面光源23c 與23d之間所存在的圖4以及圖5所示的光強度差進行調 整。 具體而言,當遮光單元9的第1遮光構件91處於_0 的旋轉姿勢、且第2遮光構件92處於+Θ1的旋轉姿勢時, 如圖13所示,與周邊點P2相關的光瞳強度分佈22中, 來自面光源22a以及22b的光不受遮光單元9的減光作用 23 201015239 32277pif.doc 的〜響因此其光強度並未發生改變。來自面光源议的 f受到遮光單元9的減光作_影響,其光強度相對大幅 地降低。來自面光源22d的光雖受到遮光單元9的減光作 用的影響’但从強度僅輕·降低。其絲,藉由遮光 9而進行了調整的與周邊點P2相關的光瞳強度分佈22,中, 於Z方向上隔開間隔的面光源22c'的光強度與面光源22d' 的光強度大致鱗。或者,面光源1,的光與面光源 22d'的光強度的差被調整為所需的光強度差。 而且,如圖14示,與周邊點P3相關的光瞳強度分佈 23中,來自面光源23a以及23b的光不受遮光單元9的減 光作用的影響,因此其光強度並未發生改變。來自面光源 23c的光雖受到遮光單元9的減光作用的影響,但其光強 度僅輕微地降低。來自面光源23d的光受到遮光單元9的 減光作用的影響,其光強度相對大幅地降低。其結果,於 藉由遮光單元9而進行了調整的與周邊點p3相關的光瞳 強度分佈23,中,於Z方向上空開間隔的面光源23cl的光強 度與面光源23d,的光強度大致相等。或者,面光源23c,的 光強度與面光源23d1的光強度的差被調整為所需的光強度 差。 再者,將面光源22c1的光強度與面光源22d,的光強度 的差、以及面光源23c’的光強度與面光源23d’的光強度的 差調整為所需的光強度差的動作,是基於光瞳強度分佈計 測裝置(未圖示)的計測結果來進行的’該光瞳強度分佈 計測裝置對基於例如經過投影光學系統PL的光在投影光 24 201015239 ill! /plf.doc 學糸統PL的光瞳面上的光瞳強度分佈進行計測。光瞳強 度分佈計測裝置,包括電荷_“件Uhafge__pled device,CCD)攝像部,對投影光學系統pL的像面上的 點所相義光瞳強度分佈(人射至各點料線於投影光學 系統PL的光曈面上所形成的光瞳強度分佈)進行監視, 所述CCD攝像部具有例如配置於與投影光學系統的光 瞳位置在光學上共麵位置的攝像面。關於光瞳強度分佈 ❹ e 計測裝置的詳細構成及作用,可參照美國專八 2008/0030707號公報等。 △吊呆 具體而言,將光瞳強度分佈計測裝置的計測結果供給 至控制部(未圖示)。控制部根據光瞳強度分佈計測裝置^ 計測結果,對遮光單元9的旋轉控制系統96輸出指;,以 使投影光學純PL的光瞳面上的光瞳強度分^ 望的分佈。旋轉控制系統96根據來自控制部的指 制 遮光構件9卜92的姿勢,將面光源22c,的光強 : 22d’的光強度的差、以及面光源23ci的光強度與面光 的光強度的差調整為所需的光強度差。 、 本實施形態中,構成遮光單元9的各遮光構件Μ、%, 具有將朝向最終的被照射面即晶圓w上的靜止曝 ER内的1點的光遮蔽的功能。而且,各遮光構件%、% 分別以在+Θ的旋轉姿勢(第丨姿勢)與的旋 2姿勢)之間連續地改變姿勢的方式而構成,上 轉姿勢i第1姿勢〕是與遮光構件對朝向靜止曝光區域ER 内的沿著Y方向的-周邊的點P2的光的減光率相比,遮 25 201015239 ill / /pn.doc 光構件對朝向另〜网違 的旋轉姿勢3的光的減光率較大,上述J 的光的減光率柏比/备嫌疋與遮光構件對朝向周邊點打 光率較小。 糾構件難向職點P3的光的減 具體而言,當將遮光構件9 率是從周邊二= 姿勢時’遮光構件9;旋轉 單調減少。而且,遮光單&邊=2 =周邊㈣ 92的姿勢是在的旋轉 對遮先構件9i以及 獨立地受到控制。因此昭、、n勢之間彼此 單元9實跡下㈣種絲轉可知,遮光 现内的Y方向,減光率依照多/^者靜止曝光區域 了將遮先早疋9視作可變部,1 w丹有 的第1點(例如周邊點Ρ2 )的;;I相對於到達被照射面上 刀佈,而改變到達被㈣面上@ 第先曈強度 m 關的第2光瞳強度分佈。 現如=錄、ίΓ形態的照明光學系統(2〜⑴包括實 止曝1st㈣遮光單元9’即沿著晶圓w的靜 變ΥΓ,減先率依照多種態樣而發生 本實施形態的照明光學系統(2〜⑴中,可 藉由遮先早7〇 9❹誠 ::=r光瞳強度分佈中、^ ㈣間隔的一對區域之間(圖4以及圖5的示例中 201015239 /pif.doc 為一對面光源22c與22d之間、以及一對面光源23c與23d 之間)的光強度的差進行調整。 而且,本M施形的曝光裝置(2〜ws ),可使用照 明光學系統(2〜12)而在與光罩M的微細圖案相對應的 適當照明條件下進行良好的曝光,進而可將光罩Μ的微細 @案遍及整個曝光區域’而以所·的線寬忠實地轉印至 晶圓jv上的所期望的位置,其中上述照明光學祕(2〜 12)是對在晶圓W上的靜止曝光區域ER内的各點所相關 #光曈強度分佈巾、失持光轴Αχ而於¥方向上隔開間隔 的一對區域的光強度差進行調整。 本實施形態中’可認為晶圓(被照射面)W上的光量 分佈例如受到遮光單元9的減光作用(調整作用)的影響。 該情況下,可視需要,藉由具有眾所周知的構成的光量分 佈調整部的作用,來變更靜止曝光區域ER内的照度分佈 或者靜止曝光區域(照明區域)ER的形狀。具體而言,作 為變更照度分佈的光量分佈調整部,可使用曰本專利特開 ® 2001-313250號以及日本專利特開2002-100561號(及與該 些相對應的美國專利第677135〇號以及第6927836號)中 所揭示的構成以及方法。而且,作為變更照明區域的形狀 的光量为佈調整部,可使用國際專利公開第W〇 2005/_326號說明書(及與其相對應的美國專利公開第 2007/0014112號公報)中所揭示的構成以及方法。此處, 以參照的方式引用美國專利第677135〇號以及第6927836 號、及美國專利公開第2007/0014112號公報的教示。 27 201015239 32277pif.doc 再者丄上述實施形態中,使遮光單元9的一對遮光構 L ^92刀⑼構成為於+6>的旋轉姿勢與·㈣旋轉姿勢之 ^續地改變姿勢。然而,並未限定於此,亦可使一對遮 執i 92 *別構成為例如於+㈣旋轉姿勢與平行姿 的蜜;旋轉姿勢、與的旋轉姿勢與平行姿勢之間 的第2%轉姿勢之間連續地改變姿勢。 ❹ 鳇迄:ί。可使一對遮光構*9卜92才冓成為可在的旋 旋轉姿勢之間進行切換,亦可構成為可在+ 切換。$與^的旋轉姿勢之間的多個姿勢之間進行 下,由早件構成遮光單元9 °該情況 轉姿勢之u:構件構成為在+θ的旋轉姿勢與β的旋 :地=勢二行姿勢之間的第2旋轉=連 的旋轉姿勢舆轉:成為如 ⑩ 多個姿勢之勢與㈣旋觀勢之間的 光進行的是,對朝向被照射面上的1點的 施形態構么為可在第1姿勢(於上c 2姿勢c於^…的%轉女勢或者-Θ的旋轉姿勢)與第 的旋轉姿勢)ΐίϊ形態中例如為·θ的旋轉姿勢或者切 間知切換,上述第】姿勢是與減光携件 28 」i’.doc 201015239 〇 =朝向被照射_沿著規定方向(於上述實施形態中為丫 向)的-周邊上的1 ,點(於上述實施形態中為p2或者 3)的光的減光率相比,減光構件對朝向另—周邊上的工 =(於上述實施形態中為P3或者p2)的光的減光率的較 上述第2姿勢是與減光構件對朝向一周邊上的上述i 點的光的減光率減’減光構件對朝向另-周邊上的上 1點的光的減光率較小。該情況下,減光構件具有··第! 著對照明光學系統的光軸Αχ進行橫切的方向即 而沾站二於上述實施形財為遮光構件的矩形狀的橫剖 著Μ 1 = i 疋大於該第丨尺和且沿 的第2方向(於上述實施形態中為遮光 構件的矩城的橫的長翁向) 件可圍繞與第丨h 了且这減先構 开;能办= 第方向正交的軸(於上述實施 &、中為圍繞X方向的軸線)而旋轉。 構件者μ上述實施形態中,可視作減光構件的—對遮光 的是透過nr是絲完全賴__件,即,使用 、率為0的遮光構件,但亦可使用透過率大於〇且 小於10G%的具有規定的透料的遮光構件。 、 遮光述實麟態巾,構成為使遮光單元9的一對 遮先構件9卜92的姿勢發錢化。然而 亦可將較構件91以及92分別 ^限疋於此 θ)的旋轉姿勢以川或者:二以(二- 間的第1旋)的旋轉姿勢與平行姿勢之 弟1凝轉安勢、以及-Θ (或者+θ)的旋轉姿勢與平 29 201015239 322/vpii.doc 行姿勢之間的第2旋轉 成遮光單元9,且將該 1且’心單個遮光構件構 轉姿勢與的旋轉 题先構件固定地設置為+Θ的旋 即,本發明中重要的/的適當的旋轉姿勢。 光進行減光的減光構件對朝向被照射面上的1點的 為對朝向被照射面的 形態中為γ方向)的一月 0者規疋方向(於上述實施 為P2或者P3)的光:f,1,點(於上述實施形態中 邊上的1點(於上述實施形態中^光^^朝向另一周 光率小。該情況下,減光構:J t:2)的光的減 明光學系統的光轴从進"有,帛1尺寸’沿著對照 述實施形態中為遮光構:5刀的方向即第1方向(於上 向),·以及第2財,為从面的短邊方 方向正交的第2方向第1尺寸、且沿著與第1 形狀的橫剖面的長邊方向)=$形態中為遮光構件的矩 ❹ 的形=的施形態Γ於四極狀的光瞳強度分佈2〇 揀止:i ,配置著由—對遮光構件91以及92構 9 °然而’並未限定於此’亦可視需要而配 構件構成的遮光單元9。而且,上述 2形態中’構成遮光單元9的遮光構件9卜92的長度方 著微型複眼透鏡8的矩形狀的單位波前區分面的短 士 方向)來配置的。然而’並未限定於此,亦可 目=於單位波前區分面的短邊方向,而稍微傾斜地配置遮 1 冓件的長度方向。而且,上述實施形態中,藉由外形形 30The light at the peripheral points P2, P3 of the Q^ portion is incident at a relatively large incident angle with respect to the XZ plane on the end face on the pupil side of the light shielding member, and therefore the amount of light blocked by the light shielding member 97 Relatively more. Further, in order to simplify the description, the peripheral point m corresponding to the inner point P2 of the still exposure region £11 is set to the side of the reticle u # hole rear side +Z direction side, and the still exposure area is made]£]1 The peripheral point P3' corresponding to the inner peripheral point is located on the _Z direction side. Further, in Fig. 7, only the light indicating the potential center point P1' and the peripheral point P2· is shielded by the light shielding member 97, but it is clear that the light reaches the peripheral point! The light of >3 also reaches the peripheral point p2, and the light is also shielded by the light shielding member 97. 20 ix'.doc 201015239 The axis is only set to be from the parallel position, in the case of ft w as shown in Fig. 8). The light of the center point η of the situation, that is, the still exposure area of = =: 1: the portion of the portion blocked by the light-shielding member 97 reaches the still exposure i^ERt 报. The periphery of the hole (4) of the cover η is the most part of the light. Further, the circle is omitted, and the === rotation only, and the posture, that is, the center point ρ of the aperture portion of the second cover mask 11 is blocked by the member 97. ==Multiple and - Figure 2 is used to reduce the dimming source of the light-shielding unit composed of the member. Figure 9 shows the size of the light-shielding unit of Figure 9 for the pair of surface lights. As an example in Fig. 9, 笫]t ==== shading structure (4) is set to '=;: Γ light source dimming effect is very small and work 1 21 201015239 / pi /.doc to the elongated extended shadow area z The width dimension in the direction schematically indicates the magnitude of the light-off effect of the light shielding unit 9. Further, as shown in the left side of FIG. 10, in the quadrupole pupil intensity distribution associated with the peripheral point P2, the light-reducing action of the first light-shielding member 91 on the surface light source 22c is relatively large, and the second light-shielding member 92 is opposite to the surface light source 22d. The dimming effect is very small. Further, as shown in the right side of FIG. 1A, in the quadrupole pupil intensity distribution associated with the peripheral point P3, the first light blocking member 91 has a relatively large dimming effect on the surface light source 23c, and the second light blocking member 92 is opposite to the light source. The 23d has the largest dimming effect. Referring to Fig. 9, reference numeral B3 denotes a point along the outermost edge of the surface light source 2〇c (21c to 23c) along the Z direction (refer to Fig. 2), and reference numeral 34 denotes a surface light source 2〇d (21d). ~23d) The point at the outermost edge along the z direction (see Figure 2). Further, a point along the outermost edge in the X direction of the surface light source 20a (21a 3a) is indicated by a reference symbol Bi, and reference is made to the point of the outermost edge of the surface light source 20b (21b to 23b) along the X direction. As described above, the light from the surface light sources 20a (21a to 23a) and the surface light sources 2Ab (21b to 23b) is not affected by the light reduction effect of the light shielding unit 9. Further, as shown in FIG. 11, the first light-shielding member 91 is set to the -^-rotation posture, and the second light-weight member % is set to the quadrupole-shaped neon intensity distribution of the + (four) rotation posture avoiding the broadcast P1 (four), the first The dimming action of the opposite side source 2le of the piece 91 and the dimming action of the second shading member closing white r4 m are relatively large. The first light-shielding member 91 is opposite to the peripheral point p2, and the second light-shielding member 92 is opposite to the surface light source 22d by 22 201015239 JZZ / /pif.doc. In the distribution related to the peripheral point P3, the first eigen member 91 has a small intensity of the (4) source 23e, and the second light-shielding member 92 has a large effect on the surface 丨 曰 曰 、 、 、 、 、 、 、 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 'When the first light blocking member 91 is turned. When the second light-shielding member is fierce and the second light-shielding member is in a +-position, the four-pole-shaped production and the eight-drinking rotational posture light-blocking member 91 are opposite to the surface light source 21c. , Dijon _ Reduced first action, and 2nd ❹ ❹ 92 The light reduction effect of the opposite light source is relatively large. The quadrupole-shaped pupil intensity distribution with the periphery, the first! The light-reducing effect of the light-shielding member 91 on the opposite side = melon is very small, and the second light-shielding member % is the largest dimming_to the surface light source. Period Miscellaneous P3 _ of the four ^ 瞳 distribution, the first! The light-shielding member 91 has a dimming power of the surface light source 23e, and the second light-shielding member 92 has a very small light-reducing effect on the surface light source 23d. In this way, by setting, for example, the rotation posture of the second light-shielding member 91 and the appropriate _θ of the parallel posture, the second light-shielding member 92 is replaced by an appropriate between the + (four) rotation posture and the parallel posture. The light of FIG. 4 and FIG. 5 existing between the pair of surface light sources 22c and 22d spaced apart in the direction of the optical axis ΑΧκΖ and between the pair of surface light sources 23c and 23d in the +π rotation posture The intensity difference is adjusted. Specifically, when the first light blocking member 91 of the light shielding unit 9 is in the rotational posture of _0 and the second light blocking member 92 is in the rotational posture of +Θ1, as shown in FIG. 13, the pupil intensity associated with the peripheral point P2 In the distribution 22, the light from the surface light sources 22a and 22b is not affected by the light reduction effect of the light shielding unit 23, so the light intensity thereof is not changed. The f from the surface light source is affected by the dimming of the shading unit 9, and its light intensity is relatively greatly reduced. The light from the surface light source 22d is affected by the light-reducing effect of the light-shielding unit 9, but the intensity is only light and low. The filament has a pupil intensity distribution 22 associated with the peripheral point P2 adjusted by the light shielding 9, wherein the light intensity of the surface light source 22c' spaced apart in the Z direction is substantially the same as the light intensity of the surface light source 22d' scale. Alternatively, the difference in light intensity between the surface light source 1 and the surface light source 22d' is adjusted to a desired light intensity difference. Further, as shown in Fig. 14, in the pupil intensity distribution 23 associated with the peripheral point P3, the light from the surface light sources 23a and 23b is not affected by the light-reducing action of the light-shielding unit 9, and therefore the light intensity is not changed. The light from the surface light source 23c is affected by the dimming action of the light shielding unit 9, but its light intensity is only slightly lowered. The light from the surface light source 23d is affected by the dimming action of the light shielding unit 9, and the light intensity thereof is relatively largely lowered. As a result, in the pupil intensity distribution 23 related to the peripheral point p3 adjusted by the light shielding unit 9, the light intensity of the surface light source 23cl which is spaced apart in the Z direction and the light intensity of the surface light source 23d are substantially equal. Alternatively, the difference between the light intensity of the surface light source 23c and the light intensity of the surface light source 23d1 is adjusted to a desired light intensity difference. Further, the difference between the light intensity of the surface light source 22c1 and the light intensity of the surface light source 22d, and the difference between the light intensity of the surface light source 23c' and the light intensity of the surface light source 23d' are adjusted to a desired light intensity difference. It is based on the measurement result of the pupil intensity distribution measuring device (not shown). The pupil intensity distribution measuring device pair is based on, for example, light passing through the projection optical system PL at the projection light 24 201015239 ill! /plf.doc The pupil intensity distribution on the pupil plane of the system PL is measured. The pupil intensity distribution measuring device includes a charge_"Uhafge__pled device, CCD" imaging unit, and the intensity distribution of the point on the image plane of the projection optical system pL (human incidence to each spot line in the projection optical system PL) The CCD imaging unit has an imaging surface that is disposed at an optically coplanar position with respect to the pupil position of the projection optical system. The CCD imaging unit has an imaging surface that is optically coplanar with the pupil position of the projection optical system. For the detailed configuration and function of the measuring device, refer to US Pat. No. 2008/0030707, etc. Δ Hanging specifically, the measurement result of the diaphragm intensity distribution measuring device is supplied to a control unit (not shown). The pupil intensity distribution measuring device ^ measures the output, and outputs a finger to the rotation control system 96 of the shading unit 9 so as to distribute the pupil intensity of the pupil plane of the projection optically pure PL. The rotation control system 96 is based on The position of the finger-shielding member 9 of the control unit 92, the difference in light intensity of the surface light source 22c, the light intensity of 22d', and the light intensity of the surface light source 23ci and the light intensity of the surface light The difference is adjusted to the required difference in light intensity. In the present embodiment, each of the light blocking members Μ and % constituting the light shielding unit 9 has a point in the static exposure ER on the wafer w which is the final illuminated surface. In addition, each of the light shielding members % and % is configured to continuously change the posture between the rotation posture (the second posture) and the rotation posture of the + ,, and the up posture i is the first posture. Is the light-reducing ratio of the light-shielding member toward the point P2 at the periphery of the Y-direction in the still-exposure region ER, and the light member is opposite to the other. The dimming rate of the light in the rotating posture 3 is large, and the dimming rate of the light of the above-mentioned J is smaller than that of the light-shielding member toward the peripheral point. Specifically, when the light-shielding member 9 rate is from the periphery two = posture, the light-shielding member 9; the rotation monotonously decreases. Moreover, the posture of the light-shielding single & side = 2 = peripheral (four) 92 is the rotation-to-shaping member 9i And being controlled independently. Therefore, the Zhao and n potentials are under the unit of each other. According to the seeding, the Y direction in the shading is now, and the dimming rate is the variable area according to the static exposure area of the multi/^, and the first point of 1 w Dan (for example, the peripheral point Ρ2) I; relative to the reaching of the knives on the illuminated surface, and changing the intensity distribution of the second pupil reaching the (fourth) face @first 曈 intensity m off. Now the illumination optical system of the form of 录, Γ ( (2~ (1) Including the actual exposure 1st (four) light-shielding unit 9', that is, the static change along the wafer w, the reduction rate occurs in accordance with various aspects of the illumination optical system of the present embodiment (2 to (1), by masking the early 7 〇9 ❹ : ::: r 瞳 瞳 intensity distribution, ^ (d) between a pair of regions (in the example of Figure 4 and Figure 2010 201015239 / pif.doc between a pair of surface light sources 22c and 22d, and a pair of surface light sources The difference in light intensity between 23c and 23d is adjusted. Further, the exposure apparatus (2 to ws) of the present M shape can perform good exposure under appropriate illumination conditions corresponding to the fine pattern of the mask M, using the illumination optical system (2 to 12), and further light can be used. The fineness of the cover 案 is spread over the entire exposure area and faithfully transferred to the desired position on the wafer jv, wherein the illumination optical secret (2 to 12) is on the wafer W. The light intensity difference between the respective points in the still exposure area ER is adjusted by the light intensity distribution sheet and the optical axis 失 in the direction of the ¥ direction. In the present embodiment, it is considered that the light amount distribution on the wafer (irradiated surface) W is affected by, for example, the dimming action (adjustment action) of the light shielding unit 9. In this case, the illuminance distribution in the still exposure region ER or the shape of the still exposure region (illumination region) ER can be changed by the action of the light amount distribution adjustment unit having a well-known configuration. Specifically, as the light amount distribution adjusting unit that changes the illuminance distribution, the Japanese Patent Laid-Open No. 2001-313250 and the Japanese Patent Laid-Open No. 2002-100561 (and the corresponding US Patent No. 677135 以及) The composition and method disclosed in No. 6927836). In addition, as the cloth adjustment unit, the light amount of the shape of the illumination area is changed, and the configuration disclosed in the specification of the International Patent Publication No. WO-2005/_326 (and the corresponding US Patent Publication No. 2007/0014112) can be used. method. Here, the teachings of U.S. Patent Nos. 677,135 and 6,927,836, and U.S. Patent Publication No. 2007/0014112 are incorporated by reference. Further, in the above embodiment, the pair of light-shielding structures L^92 of the light-shielding unit 9 are configured to change the posture in the rotation posture of +6> and the (four) rotation posture. However, the present invention is not limited thereto, and the pair of masks may be configured to be, for example, a honey in a + (four) rotation posture and a parallel posture; a second rotation between a rotation posture and a rotation posture and a parallel posture; The posture is continuously changed between postures.鳇 鳇 :: ί. It is also possible to switch between a pair of light-shielding structures to be switchable between the rotational positions, or to switch between +. The relationship between the plurality of postures of the rotation posture of $ and ^ is performed, and the shading unit is formed by the early part. The state of the posture is u: the member is configured to rotate in +θ and the rotation of β: ground = potential two The second rotation between the line postures = the continuous rotation posture: the light between the postures of the more than 10 postures and the (4) rotation posture is the configuration of the point toward the one surface to be illuminated. In the first posture (in the upper c 2 posture c in the range of %, the female or the 旋转 rotation posture) and the first rotation posture) 例如ίϊ, for example, the rotation posture of the θ or the inter-cutting switch The above-mentioned first posture is a point on the periphery of the dimming carrying member 28"i'.doc 201015239 〇=direction of irradiation _ along a predetermined direction (in the above-described embodiment). The dimming rate of the light of p2 or 3) in the form is smaller than the dimming rate of the light of the dimming member toward the other periphery (P3 or p2 in the above embodiment) The posture is a dimming rate of light with respect to the above-mentioned i point on the periphery of the dimming member pair, and the dimming member pair faces the other-periphery Extinction of light is small on the one point. In this case, the dimming member has ... The direction in which the optical axis 照明 of the illumination optical system is transversely cut is the rectangular cross-section of the light-shielding member Μ 1 = i 疋 is larger than the second rule and the second edge The direction (the horizontal long dimension of the moment of the light shielding member in the above embodiment) can be around the 丨h and this is reduced first; the axis can be orthogonal to the first direction (in the above implementation & The middle rotates around the axis in the X direction. In the above embodiment, the light-reducing member can be regarded as a light-shielding member. The light-transmitting member is a light-shielding member having a transmittance of 0, but a transmittance of greater than 〇 and less than 10 G% of a light-shielding member having a prescribed transparency. The light-shielding ribbed towel is configured to make the posture of the pair of mask members 9 of the shading unit 9 to be mobilized. However, it is also possible to limit the rotation of the members 91 and 92 to the θ) respectively, or to rotate the posture of the second and second parallel rotations and the parallel posture. The second rotation between the rotation posture of -Θ (or +θ) and the flat posture of the flat 29 201015239 322/vpii.doc is the shading unit 9, and the rotation of the 1 and the single-body shading member is first The member is fixedly set to the immediate rotation of +Θ, an important/suitable rotational posture in the present invention. The light-reducing member that dims the light, the light that is directed toward one point on the surface to be irradiated is the light in the direction of the γ direction in the form of the illuminating surface in the gamma direction (in the above-described manner, P2 or P3) : f, 1, point (one point on the side in the above embodiment (in the above embodiment, the light is slightly smaller toward the other circumference. In this case, the light reduction is: J t: 2) The optical axis of the optical system of the illuminating system is "the size of the 帛1", which is the light-shielding structure in the embodiment: the direction of the five knives, that is, the first direction (in the upward direction), and the second fiscal, The second dimension of the surface in the direction of the short side is perpendicular to the first dimension and the longitudinal direction of the cross section of the first shape is the same as the shape of the rectangle of the light shielding member. The pupil intensity distribution 2 〇 picking: i is disposed by the light-shielding unit 9 which is configured by the pair of light-shielding members 91 and 92, but is not limited thereto. Further, in the above-described two aspects, the length of the light shielding member 9 constituting the light shielding unit 9 is arranged in the direction of the short direction of the rectangular unit wavefront discrimination surface of the micro fly's eye lens 8. However, the present invention is not limited thereto, and the length direction of the mask may be slightly inclined in the short-side direction of the unit wavefront. Further, in the above embodiment, by the outer shape 30

201015239 jzz / /pif.doc ”形狀且具有平行平面板的形態的遮光槎 來構成遮光單元9。麩而,祐去砰定於士叱構件91、92 ^ 、並未限疋於此’遮光構件的具 ^冓成可為讀職。即,構成絲單元 也 的外形形狀、數量、配置料為錄形態。㈣先構件 再者,上述說明中,以照明光瞳中形 瞳強度分佈的變形照明、即以四極照明為例; 用,行了說明。然而,並未限定於四極==: 成著環帶狀的光曈強度分佈的環形照明、搞/ 外的其他多極狀的光㈣度分佈的多極_等 = 應用本發明而獲得相同的作用效果。 α /χβ 述說明中,於微型複眼透鏡8的後側焦點面 ,者該後侧焦點面的附近的照明光瞳的正後方配置著遮光 單元9的遮光構件。然而,並未限定於此,亦可於微型複 眼透鏡8的後側焦點面或者該後侧焦點面的附近的照明光 曈的正前方配置遮光構件。而且,亦可於較微型複眼透鏡 8更後側的其他照明光瞳的正前方或者正後方、例如於成 像光學系統12的前側透鏡群12a與後側透鏡群12b之間的 照明光瞳的正前方或者正後方配置遮光構件。再者,當於 照明光瞳的位置配置著遮光構件時,由於遮光構件沿著光 車由方向具有寬度尺寸,因此可視作於照明光曈的緊前方以 及緊後方配置著遮光構件。 上述實施形態的曝光裝置’是將包含本案申請專利範 圍中所列舉的各構成要素在内的各種子系、统 (subsystem),以確保規定的機械精度、電氣精度、光學 31 201015239 322/ypiI.doc 精度的方式加以組裴而製造。為了確保該些各種精度,而 於該組裝的前後,對各種光學系統進行用以達成光學精度 的調整,對各種機械系統進行用以達成機械精度的調整, 對各種電氣系統進行用以達成電氣精度的調整。用各種子 系統來組裝曝光裝置的組裝步驟中’包含各種子系統彼此 的機械連接、電路的配線連接、氣壓迴路的配管連接等。 於由此種各種子系統來組裝曝光襞置的組裝步驟之前,當 然具有各子系統各自的組裝步驟。當由各種子系統組裝成 曝光裝置的組裝步驟結束之後,進行綜合調整,以確保作 為整個曝光裝置的各種精度。再者,較理想的是,於溫度 以及潔淨度等受到管理的無塵室(cleanr〇〇m)中製造曝光 裝置。 、其-人’對使用了上述實施形態的曝光裝置的元件製造 方法進行說明。圖15是表示半導體元件的製造步驟的流程 ^如圖15所不’半導體元件的製造步驟中,在成為半導 體讀的基板的晶圓W上蒸鍍金屬膜(步驟_),於該 蒸鍍的金屬膜上塗佈作為感光性材料的光阻劑 嶋ist)(步驟S42)。接著,使用上述實施形態祕 e g (域1,邮))M上所形成的圖案轉 P日日圓W上的各曝光照射區域(步驟S44 •曝光步驟), 並於該轉印結束後進行晶圓w的顯影,即,進行轉印著圖 案的光阻劑的顯影(步驟S46 :顯影步驟)。其後,將藉由 步驟S46而生成於晶圓W的表面上的光阻圖案(似说 pattern)作為光罩,對晶圓%的表面進行姓刻等的加工(步 32 201015239 nz / /pif.doc 驟S48 ··加工步驟)。 此處’所謂光阻圖牵 的曝光I置所轉印的成著與藉由上述實施形態 層,且該凹部貫穿光阻^對應的形狀的凹凸的光阻劑 案進行晶圓w的表面的力工°步驟S48中’經由該光阻圖 中,例如包含晶圓w的表:的二步行的加工 至少-方。再者,步驟S44中,的成膜的 Φ 是將塗佈著光阻劑的晶圓臂作光1:的:光裝置 行圖案的轉印。 基板、即板P來進 圖16是表示液晶顯示元件等的液晶元 的流程圖。如圖16所示,液晶元件的製造步驟:製= 灯圖案形成步驟(步驟S5G)、彩色滤光片(咖迅 形成步驟(步驟$52)、胞㈤丨)組裝步驟(步驟奴 以及模組組裝步驟(步驟S56)。 ) 步驟S5G的圖案形成步驟中,在作為板ρ的塗佈著光 阻劑的玻璃基板上,使用上述實施形態的曝光裝置來形 φ 電路圖案以及電極圖案等的規定圖案。於該圖^形成步驟 中包括:曝光步驟,使用上述實施形態的曝光1置來將圖 案轉印至光阻劑層;顯影步驟,進行轉印著圖案的板ρ的 顯影’即進行玻璃基板上的光阻劑層的顯影,從而生成形 狀與圖案相對應的光阻劑層;以及加工步驟,經由該顯影 後的光阻劑層來對玻璃基板的表面進行加工。 心 步驟S 5 2的彩色濾光片形成步驟中形成如下的彩色滤、 光片,該彩色濾光片中呈矩陣狀地排列著多個與尺^^: 33 201015239 jzz/ /pn.doc 紅)、G(Green,綠)、B(Blue,藍)相對應的三個點(dot) 的組,或者於水平掃描方向上排列著多個r、G、B的3 條條紋狀(stripe)的濾光片的組。 步驟S54的胞(cell)組裝步驟中,使用藉由步驟S5〇 而形成著規定圖案的玻璃基板、及藉由步驟S52而形成的 彩色濾光片來組裝液晶面板(液晶胞)。具體而言,例如藉 由向玻璃基板與彩色濾光片之間注入液晶而形成液晶面 板。步驟S56的模組組裝步驟中,對藉由步驟S54而組裝 的液晶面板,安裝使該液晶面板進行顯示動作的電路以及 背光源(backlight)等的各種零件。 ® 而且,本發明並不限定於應用在半導體元件製造用的 曝光裝置,亦可廣泛應用於例如形成於方型玻璃板上的液 晶顯示元件、或者電漿顯示器(plasmadisplay)等的顯示 裝置用的曝光裝置、用以製造攝像元件(CCD等)、微型 機器(jnicromachine )、薄膜磁頭(thin fllm magnetic head)、 及脫氧核醣核酸(deoxyribonucleic acid,DNA)晶片等的 各種元件的曝光裝置。進而,本發明亦可應用於使用光微 影步驟來製造形成著各種元件的光罩圖案的光罩(光罩、 馨 主光罩等)時的曝光步驟(曝光裝置)。 再者,上述實施形態中,使用ArF準分子雷射光(波 長:193mn)或KrF準分子雷射光(波長:248nm)來作 為曝光光束,但並未限定於此,亦可對其他適#的雷射光 源、例如使用供給157 nm波長的雷射光的F2雷射光源 應用本發明。 34 201015239201015239 jzz / /pif.doc "Shade 形状 形状 形状 形状 形状 形状 形状 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 遮光 构成 遮光 遮光 遮光 遮光 遮光 遮光 遮光 遮光 遮光 遮光The shape, the number, and the configuration of the constituents of the silk unit are recorded. (4) The first component, in the above description, the deformation illumination of the intensity distribution in the illumination pupil For example, quadrupole illumination is used; however, it is explained. However, it is not limited to four poles ==: ring illumination with a ring-shaped aperture intensity distribution, and other multi-pole light (four degrees) The multipole of the distribution _ etc. The same effect is obtained by applying the present invention. α / χβ In the description, the rear focal plane of the micro fly-eye lens 8 is directly behind the illumination pupil near the rear focal plane. The light shielding member of the light shielding unit 9 is disposed. However, the light shielding member may be disposed directly in front of the illumination pupil of the rear focus surface of the micro fly-eye lens 8 or the vicinity of the rear focus surface. Also available in the micro-flip eye lens 8 A light blocking member is disposed directly in front of or behind the illumination pupil between the front lens group 12a and the rear lens group 12b of the imaging optical system 12, directly in front of or behind the other illumination pupils on the rear side. When the light shielding member is disposed at the position of the illumination pupil, since the light shielding member has a width dimension along the direction of the light vehicle, the light shielding member can be disposed immediately before and immediately behind the illumination pupil. The exposure apparatus of the above embodiment 'This is a group of sub-systems and subsystems including the various components listed in the patent application scope of this application, to ensure the specified mechanical precision, electrical precision, and optical 31 201015239 322/ypiI.doc accuracy. In order to ensure these various precisions, various optical systems are used to adjust optical precision before and after the assembly, and various mechanical systems are used to achieve mechanical precision adjustment for various electrical systems. In order to achieve electrical precision adjustment, the assembly steps of assembling the exposure device with various subsystems include 'various The mechanical connection of the systems to each other, the wiring connection of the circuit, the piping connection of the pneumatic circuit, etc. Before the assembly steps of assembling the exposure devices by such various subsystems, of course, the respective assembly steps of the respective subsystems are used. After the assembly step of assembling the exposure apparatus is completed, comprehensive adjustment is performed to ensure various precisions as the entire exposure apparatus. Further, it is preferable to clean the room (cleanr〇〇m) which is managed in temperature and cleanliness. In the manufacturing apparatus of the above-described embodiment, a method of manufacturing an element using the exposure apparatus of the above-described embodiment will be described. Fig. 15 is a flowchart showing a manufacturing procedure of the semiconductor element. A metal film is deposited on the wafer W which is a substrate for semiconductor reading (step _), and a photoresist (photoresist) as a photosensitive material is applied onto the vapor-deposited metal film (step S42). Next, using the pattern formed on the above-described embodiment, the pattern formed on the M is transferred to each exposure irradiation region on the P-day Y (step S44 • exposure step), and the wafer is transferred after the transfer is completed. Development of w, that is, development of a photoresist to which a pattern is transferred (step S46: development step). Thereafter, a photoresist pattern (like pattern) generated on the surface of the wafer W by the step S46 is used as a mask, and the surface of the wafer % is subjected to processing such as a surname (step 32 201015239 nz / /pif .doc Step S48 ··Processing steps). Here, the exposure of the so-called photoresist pattern is performed on the surface of the wafer w by the photoresist which is transferred to the unevenness of the shape corresponding to the photoresist by the above-described embodiment layer. In the step S48, the process of the two walks including the wafer w of the wafer w is at least squared. Further, in the step S44, the film formation Φ is a transfer of the pattern of the light device pattern by the wafer arm coated with the photoresist. The substrate, i.e., the board P, is shown in Fig. 16 which is a flowchart showing a liquid crystal cell such as a liquid crystal display element. As shown in FIG. 16, the manufacturing steps of the liquid crystal element: manufacturing = lamp pattern forming step (step S5G), color filter (coffee step forming step (step $52), cell (five) 丨) assembly step (step slave and module assembly) Step (Step S56). In the pattern forming step of step S5G, a predetermined pattern such as a circuit pattern and an electrode pattern is formed on the glass substrate coated with the photoresist as the plate p by using the exposure apparatus of the above embodiment. . The forming step includes: an exposure step of transferring the pattern to the photoresist layer using the exposure 1 of the above embodiment; and a developing step of performing development of the pattern ρ on which the pattern is transferred, that is, performing on the glass substrate Development of the photoresist layer to form a photoresist layer having a shape corresponding to the pattern; and a processing step of processing the surface of the glass substrate via the developed photoresist layer. In the color filter forming step of the cardiac step S 5 2, the following color filter and light sheet are formed, and the color filter is arranged in a matrix in a plurality of lines and feet: 33 201015239 jzz / /pn.doc red ), a group of three dots corresponding to G (Green), B (Blue, blue), or three stripes of r, G, and B arranged in the horizontal scanning direction. Group of filters. In the cell assembly step of step S54, the liquid crystal panel (liquid crystal cell) is assembled using the glass substrate in which the predetermined pattern is formed by the step S5, and the color filter formed in the step S52. Specifically, for example, a liquid crystal panel is formed by injecting a liquid crystal between a glass substrate and a color filter. In the module assembly step of the step S56, various components such as a circuit for causing the liquid crystal panel to perform a display operation and a backlight are mounted on the liquid crystal panel assembled in the step S54. Further, the present invention is not limited to application to an exposure apparatus for manufacturing a semiconductor element, and can be widely applied to, for example, a liquid crystal display element formed on a square glass plate or a display device such as a plasma display. An exposure apparatus and an exposure apparatus for manufacturing various elements such as an imaging element (CCD or the like), a jnicro machine, a thin flm magnetic head, and a deoxyribonucleic acid (DNA) wafer. Further, the present invention is also applicable to an exposure step (exposure apparatus) when a photomask (a photomask, a singe mask, etc.) in which a mask pattern of various elements is formed is produced by a photolithography step. Further, in the above embodiment, ArF excimer laser light (wavelength: 193 nm) or KrF excimer laser light (wavelength: 248 nm) is used as the exposure light beam, but the invention is not limited thereto, and other mines may be used. The present invention is applied to a light source, such as an F2 laser source that supplies laser light having a wavelength of 157 nm. 34 201015239

/ /pix.d〇C 置應ΓΐΖ竹施職巾’ ”步鱗m的曝光裝 =ϊ:中曝光裝置是_ 定於此,* ⑽曝先出先罩Μ的圖案。然而,並未限 ^tepandrepeat) ί晶㈣先裝置是重複進行 光罩Μ的困案的動作:人、* (〇ne-Sh〇t e—隱)出 ❹ 者曰上述實施形態中,是對曝光裝置中對光罩(或 = ;應用本發明,但並不限 照射= 雖…、、本發明已以實施例揭露如上 =之=!技術,具有通常知== 發明之料n!!圍内’當可作些許之更動與潤飾,故本 構成=是概略性地表示本發明的實麵態的曝光裝置的 圖。圖2疋表顿明光瞳巾所形成的吨狀的二次光源的 圖。圖3疋表示晶圓上所形成的矩形狀的靜止曝光區域的 圖4是說明入射至靜止曝光區域内的周邊 光所形成的四極狀的光瞳強度分佈的性狀的冑。 、 35 201015239 /pu.doc 圖5是說明入射至靜止曝光區域内的周邊點p 光所形成的峰狀的光瞳強度分佈的性狀的圖‘。 ' 圖6是概略性地表示遮先單元的構成的圖。 圖7是說明各遮光構件的基本作用 圖8是說明各遮光構件的基本作用的第2圖。 圖9疋將第1遮光構件設定為半彳+:欠扭 :件設定為Μ的旋轉姿勢時的遮光:元= 魯 的減9的遮林元對—對面光源 轉姿將示將第1遮光構件設定為-θ的旋 單元對構件以為+0崎轉姿勢時的遮光 早70對一對面先源的減光作用的大小的圖。 轉姿將m構件設定為+Θ的旋 單元針tf面I遮光構件3又疋為4的旋轉姿勢時的遮光 早70對一對面光_減光侧的大小的圖。 參 圖13是示意性地表示藉由遮光單元對與周邊點 1的光瞳強度分佈進行調整的情況的圖。 ’” 關的=4強^1 意,地表示藉由遮光單元對與周邊點P3相 、光s強度为佈進行調整的情況的圖。 圖15是表示半導體元件的製造步驟的流程圖。 的流=6。是表顯示元件等的g元件的製造步驟 【主要元件符號說明】 36 201015239, _____广丄doc I :光源 2:整形光學系統 3:繞射光學元件 4 :無焦透鏡 5 :規定面 7:可變焦距透鏡 8:微型複眼透鏡(光學積分器) 9:遮光單元 G 10 :聚光光學系統 II :光罩遮器 12:成像光學系統 12a:前侧透鏡群 12b :後侧透鏡群 20、22、22'、23、23':光瞳強度分佈(二次光源) 20a〜20d、21a〜21d、22a〜22d、22c'、22d'、23a 23d、23c’、23d':面光源 @ 9卜92 :遮光構件 93 :旋轉轴 94 :驅動部 95 :支撐部 96:旋轉控制系統 97 :遮光構件 AS :孔徑光闌 AX :光軸 37 201015239 / / pij_.doc B1 :面光源20a (21a〜23a)的沿著X方向的最外緣 的點 B2 :面光源20b (21b〜23b)的沿著X方向的最外緣 的點 B3 :面光源20c (21c〜23c)的沿著Z方向的最外緣 的點 B4 :面光源20d (21d〜23d)的沿著Z方向的最外緣 的點/ /pix.d〇C The exposure of the shovel of the bamboo stalks ' s step scale m = ϊ: The medium exposure device is _ set here, * (10) the pattern of the first hood is exposed. However, there is no limit to ^ Tepandrepeat) 晶 ( (4) The first device is the action of repeating the trap of the mask :: person, * (〇ne-Sh〇te-implicit) 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰Or =; apply the invention, but not limited to illumination = although..., the invention has disclosed the above === technology, and has the usual knowledge == invention material n!! In addition, this configuration is a view schematically showing an exposure apparatus of a real surface of the present invention. Fig. 2 is a view showing a tonnage-shaped secondary light source formed by a surface of a bright light wipe. Fig. 3 shows a crystal Fig. 4 of the rectangular still exposure region formed on the circle is a view for explaining the properties of the quadrupole pupil intensity distribution formed by the peripheral light incident on the stationary exposure region. 35, 201015239 /pu.doc FIG. 5 A diagram showing the behavior of a peak-shaped pupil intensity distribution formed by p-light incident at a peripheral point in a still exposure region. Fig. 6 is a view schematically showing a configuration of a masking unit. Fig. 7 is a view showing a basic operation of each of the light blocking members. Fig. 8 is a second view for explaining a basic function of each of the light blocking members. Half 彳 +: Under-twist: Shading when the piece is set to Μ in the rotation position: Yuan = Lu's minus 9 yao-shah pair - the opposite-side light source turning position will show the first opaque member set to - θ. It is assumed that the light-shielding effect in the case of the +0-spinning posture is 70 pairs of the light-reducing action of the pair of faces. The rotation of the m-member is set to the rotation of the unit pin tf surface I. The light-shielding member 3 is further rotated by 4 FIG. 13 is a view schematically showing a state in which the pupil intensity distribution of the peripheral point 1 is adjusted by the light shielding means as shown in FIG. The value of the semiconductor element is adjusted by the light shielding unit, and the light s intensity is adjusted by the light shielding unit. Fig. 15 is a flowchart showing the manufacturing procedure of the semiconductor element. 6. It is a manufacturing step of a g element such as a display element or the like [Description of main component symbols] 36 201 015239, _____ 丄 doc I : Light source 2: shaping optical system 3: diffractive optical element 4: afocal lens 5: prescribed surface 7: variable focal length lens 8: micro fly-eye lens (optical integrator) 9: shading unit G 10 : concentrating optical system II: reticle 12: imaging optical system 12a: front lens group 12b: rear lens group 20, 22, 22', 23, 23': pupil intensity distribution (secondary light source 20a to 20d, 21a to 21d, 22a to 22d, 22c', 22d', 23a, 23d, 23c', 23d': surface light source @992: light shielding member 93: rotating shaft 94: driving portion 95: supporting portion 96 : Rotation control system 97: shading member AS: aperture stop AX: optical axis 37 201015239 / / pij_.doc B1 : point B2 of the outermost edge along the X direction of the surface light source 20a (21a to 23a): surface light source 20b Point B3 of the outermost edge along the X direction of (21b to 23b): point B4 of the outermost edge along the Z direction of the surface light source 20c (21c to 23c): along the surface light source 20d (21d to 23d) The outermost point of the Z direction

ER :靜止曝光區域 Μ :光罩 MS :光罩平台 P1、ΡΓ :中心點 P2、P3、P2'、P3':周邊點 PL :投影光學系統 W :晶圓 WS :晶圓平台ER : Still exposure area Μ : Photomask MS : Mask platform P1 , ΡΓ : Center point P2 , P3 , P2 ' , P3 ' : Peripheral point PL : Projection optical system W : Wafer WS : Wafer platform

Θ:入射角度 X、Y、Z :軸 S40〜S48、S50〜S56 :步驟 38Θ: incident angle X, Y, Z: axis S40~S48, S50~S56: Step 38

Claims (1)

L.doc 201015239 七、申請專利範圍: ^明種二月光學系統,以來自光源的光而對被照射面 進灯妝明,其特徵在於包括: :佈1成先學^統,包括光學積分^,且 積分器更後侧的照明光瞳中形成光瞳強度分佈;^及學 的位配置於上述㈣光瞳的正前方或者正後方 、、“向上述被照射面上的1點的光進行減光, ❹ 對朝構件以如下姿勢配置著’即與上述減光構件 光的減光ίΐΓ面的沿著規定方向的—周邊上的1點的 的光===大t述減光構㈣朝向另-周邊上的1點 2广十申請專利範圍第1項所述之照明光學系統,a中 減光率ίίί構件具有板狀的形態,且以上述減光構件的 勢配置著。述周邊起朝向上述另一周邊而單調增大的姿 3卜如Λΐ專利範圍第2項所述之朗光學系統,其中 形狀的單讀著上述規以㈣具有細長的矩 上述構件’沿著與上述照明光學系統的光軸及於 面且 伸的㈣平行的平面而具有矩形狀的剖 分面驗打向大財行地延伸。 進行,,i特徵以來自光源的光而對被照射面 形成光學系統’包括光學積分器’且於較該光學 39 201015239 積分器更後側的照明光瞳中形成光瞳強度分佈;以及 、減光構件,配置於上述照明光瞳的正前方或者正後方 咖刪統的光轴進行橫 、 方向的第1尺寸,以及大於該第1尺寸見 /口著與上述第1方向正交的第2方向的尺寸、即第2尺寸, ί方向與上述照明光學系統的上述光軸相交。 •如申請專利範圍第4項所述之照明光學系統, 大一件對編-周邊=: 進丄種括以來自光源的光而對被照射面 籍八成光學系統,包括絲積分器,且於較該光與 照辦曈中形成繼度分佈;以及 的位上述照明先料正前錢者正後方 上述減光構件構成為可在第i姿勢 :切換’上述第!姿勢是與上述減光:件間進 :面的沿者規定方向的一周邊上二” 比,上述減光構件對朝向另一周邊上的1 =^咸先率相 鼓,上述第2姿勢是與上述減光構件對光率 上的上述1點的先的物相比,上述滅=二= t pif.doc 201015239 述U上的上?1點的光的減光率較小。 •如申5青專利祀圍第6項所计^ 上述減光構件以在上述第4 ,其中 連續地改變姿勢的方式而構&。t、上m姿勢之間 統,Γ/料舰㈣6項麵7項所述之照明光學系 上述減光構件具有板狀的形態, θit第1姿勢中,上述減光構件的減光率自上述 周邊而單調増大’於上述第 周邊而;=件的減光率自上述-周邊起朝向上述另- 9 广申請專利範圍第8項所述之照明光學系統 形狀上述敎杨而具有細長的矩 上、光構件沿著與上述照明光㈣統的光軸及於 Ο 延伸的赠平行的平_具有矩形狀的剖 、上述單位波前區分面的短邊方向大致平行地延伸。 10.如申請專利範圍第9項所述之照縣學系統,其中 土述減光構件構成為可圍繞沿上述單位波前區分面 的短邊方向延伸的軸線而旋轉。 11 ·-種照明光㈣統’以來自光源的光而對被照射面 進行照明,其特徵在於包括: f佈形成光學系統,包括光學積分器,且於較該光學 積~ g更後侧的照明光瞳中形成光瞳強度分佈;以及 41 201015239 /pii.doc 的位置明光瞳的正前方或者正後方 的方向即第1方向的第a照明光學系統的光軸進行橫切 著與上逑第〗方向正寸,以及大於該第1尺寸且沿 且該減光構件可圍繞2的尺寸、Λ第2尺寸, 的軸而旋轉。 、 方向及上述第2方向正交 中a如申請專利範圍第11項所述之照明光學系統,其 _ 行切^在第1姿勢與第2姿勢之間進 射面的沿著規行向的1周H光構件對朝向上述被照 比,上述減光構件對朝J邊闽f點的光的減光率相 昭明Γ學如季申/專 1利範圍第1項至第12項中任一項所述之 縣=其特徵為該照明光學系統可包括多個上述 照Μ4學項至第13項中任一項所述之 上述減光構件之定位方式,為使其對來自上述照明光 曈中夾持上述照明光學系統的光軸而於上述規定方向上隔 開間隔的一對區域的光發揮作用。 15·如申請專利範圍第1項至第14項中任一項所述之 42 201015239 ozz / /pif.doc 照明光學线,更包括光量分佈調整部,該光量分 =更上述被照射面上的照度分佈或者上述被摘 形成的照明區域的形狀。 n 其 中 16.如申請專利範圍第15項所述之照明光學系統, 射面娜部絲上㈣储件對上述被照 射面上的光量分佈的影響。 ❹ ❹ 逸-ϋ種f明光學系統,以來自光源的光而對被照射面 進仃照明,其特徵在於包括: 柯囬 分佈形成光學系統,包括光學積分器,且於 積分器更後側的照明光曈中形成光瞳強度分佈;以及 可變部’可相對於與到達上述被照射面上的第2點的 =:第i光瞳強度分佈,來改變與達到上述被照射 強度分佈i於上述第1 _第2關光束相_第2光瞳 中18·如申請專利範圍第17項所述之照明光學系統,其 明可變部包括減光構件,賴域件配置於上述两 或者正後方的位置,且對朝向上述被照射 面上的1點的光進行減光; 、隹〜上ί減光構件構成’為可在第1姿勢與第2姿勢之間 1姿勢是與上述減光構件對朝向上述被 ^ Η、^著規定方向的—周邊上的1點的光的減光率相 ’上述減光構件對朝向另—周邊上的i點的光的減光率 43 201015239 32277pii;doc ί二=第2姿勢是與上述減光構件對朝向上述一周邊 述:士減光率相比,上述減光構件對朝向上 攻另周邊上的上述1點的光的減光率較小。 系統Μ其如中申請專利範圍第17項或第18項所述之照明光學 明光,該減光構件配置於上述照 乃九暖的正刖方或者正後方的位置,具八 參 明光學系統的光轴進行橫切的方向即第】方°向的第= 寸’以及大於該第1尺寸且沿著與上述第i方向正 2笫尺寸、即第2尺寸,且該減光構件可圍繞與上述 第1方向及上述第2方向正交的轴而旋轉。 昭明第1項至第19項中卜項所述之 闌===與增_ 光學上形成共輛的面的投影光學系統組被』射面在 上述減光構件為遮光構件。 22·—種曝光裝置,其特徵在於: 案進行照明的如申請專利範圍 :定中:紐項基所板,明光學系統,且㈣ I* +如如申清專利範圍第22項所述之曝光裝置,包括將 上述規定的困案的像形成於上述感先性基板上的投== 44 201015239 όζζ / /pif.doc 系統’且相對於該投景彡先㈣統而使上述規定關案以及 上述感光性基板>’α著掃描方向相對移動,以將上述規定的 圖案投影曝光至上述感先性基板上。 24. 如:請專利範圍第23項所述之曝光裝置,其中 上述掃描方向對應於與上述規定方向正交的方向。 25. —種元件製造方法,其特徵在於 ❹ 曝光步驟’使用如申請專利範圍第22項至第24項中 任-項所述之曝光裝置,將上述規定的職曝光至 光性基板上; # 顯影步驟’對轉印著上述規定的圖案的上述感光性基 板進行ϋί形狀與上述規定的_相對應的光罩層形 成於上述感光性基板的表面;以及 /加工步驟’經由上述光罩層對上述感紐基板的表面 進行加工。 ❹ 45L.doc 201015239 VII. Patent application scope: ^Ming's February optical system, which uses the light from the light source to make the light into the illuminated surface, which is characterized by:: cloth 1 into the first learning system, including optical integral ^, and the integrator forms a pupil intensity distribution in the illumination pupil on the rear side; the position of the learning element is arranged directly in front of or behind the (4) pupil, and "light at 1 o'clock on the illuminated surface" The light is dimmed, and the light is arranged in the following position, that is, the light at the 1st point on the periphery of the dimming surface of the light-reducing member light. (4) The illuminating optical system described in the first aspect of the invention is applied to the illuminating optical system according to the first aspect of the invention, wherein the light-reducing rate of the member has a plate shape and is disposed with the potential of the light-reducing member. The periphery is monotonously enlarged toward the other periphery. The optical system described in the second aspect of the patent, wherein the shape is read by the above-mentioned rule, (4) having an elongated moment, the member is along the above The optical axis of the illumination optics and the surface A parallel plane having a rectangular cross-sectional surface is extended toward the big fortune. The i feature is formed by the light from the light source to form an optical system 'including an optical integrator' with respect to the illuminated surface and 201015239 The integrator forms a pupil intensity distribution in the illumination pupil on the rear side; and the dimming member is disposed in the first dimension of the horizontal direction in the horizontal direction of the optical axis disposed directly in front of or behind the illumination pupil. And a dimension larger than the first dimension in the second direction orthogonal to the first direction, that is, a second dimension intersecting the optical axis of the illumination optical system. The illumination optical system, the large one-piece-periphery=: the entanglement includes the light from the light source and the illuminating surface of the eight-dimensional optical system, including the silk integrator, and is formed in the light and the light And the position of the light-reducing member is configured to be in the i-th position: the switching of the above-mentioned first posture is the same as the above-mentioned dimming: square The second light-receiving member has a pair of light-reducing members facing the other periphery, and the second posture is the first one of the light-receiving members on the light-emitting point In contrast, the above ext = two = t pif.doc 201015239 on the upper U? The dimming rate of light at 1 point is small. • The above-mentioned light-reducing member is constructed in the above-mentioned fourth embodiment in which the posture is continuously changed, as in the sixth item of the application. t, the upper m posture, the Γ / the ship (4) 6 items, the illumination optical system, the light-reducing member has a plate shape, and in the first posture of θit, the dimming rate of the light-reducing member is from the above Peripheral and monotonously large in the periphery of the above; = the dimming rate of the member from the above-peripheral toward the above-mentioned other - 9 wide application of the scope of the illumination optical system described in the eighth aspect of the invention, having a slender moment The optical member extends substantially parallel to the short-side direction of the unit wavefront-affecting surface along the optical axis of the illumination light (four) and the parallel-shaped flat-shaped cross section extending in the Ο. 10. The system according to claim 9, wherein the earthening member is configured to be rotatable about an axis extending in a direction of a short side of the unit wavefront distinguishing surface. 11--A kind of illumination light (4) is illuminating the illuminated surface with light from a light source, and is characterized in that: the f-cloth forming optical system includes an optical integrator, and is more rearward than the optical product The pupil intensity distribution is formed in the illumination pupil; and the position of the front illumination or the rear direction of the bright pupil is 41. The position of the first illumination optical system in the first direction is transversely intersected with the upper jaw. The direction is positive and the axis is larger than the first dimension and the dimming member is rotatable about the axis of the size 2 and the second dimension. And the direction and the second direction orthogonal to the illumination optical system according to Item 11 of the patent application, wherein the direction of the entrance surface between the first posture and the second posture is 1 along the direction of the regulation The circumferential H-light member pair faces the above-mentioned ratio, and the dimming rate of the light-reducing member to the point of the side of the J-direction is shown in the first paragraph to the 12th item. The county of the present invention is characterized in that the illumination optical system may include a plurality of positioning modes of the light-reducing member according to any one of the above items, wherein the pair of illumination elements are Light that sandwiches the optical axis of the illumination optical system and is spaced apart in the predetermined direction functions. 15. The 42 201015239 ozz / /pif.doc illumination optical line according to any one of claims 1 to 14, further comprising a light quantity distribution adjustment unit, wherein the light quantity is more than the above-mentioned illuminated surface The illuminance distribution or the shape of the illumination region formed above. n Among them, as in the illumination optical system described in claim 15 of the patent application, the influence of the (4) storage member on the surface of the face on the above-mentioned illuminated surface. ❹ ϋ ϋ ϋ f f f 明 明 明 明 明 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学Forming a pupil intensity distribution in the illumination pupil; and the variable portion 'changes and reaches the illumination intensity distribution i with respect to the =: i-th pupil intensity distribution reaching the second point on the illuminated surface The illuminating optical system according to claim 17, wherein the bright variable portion includes a light-reducing member, and the ray-receiving member is disposed in the above two or positive At the rear position, the light that is directed to one point on the illuminated surface is dimmed; and the 隹~up ί light-reducing member is configured to be in a position between the first posture and the second posture. The light-reducing rate of the light of the light-receiving member pair toward the i-point on the other periphery of the light-reducing member of the light-receiving member toward the other side of the predetermined direction of the above-mentioned direction; 2010 201020239 32277 pii; Doc ί二=The second posture is the same as the above light reduction Toward the periphery of said one: light attenuation rate compared with disabilities, the light reducing member smaller reduction rate of the light on the periphery of one point of light toward the attack on the other. The illumination optical bright light according to Item 17 or Item 18 of the patent application scope, wherein the light-reducing member is disposed at a position of the front side or the rear side of the above-mentioned nine-warm light, and has an optical system of eight parts The direction in which the optical axis is transversely cut, that is, the first inch in the θ direction, and the dimension larger than the first dimension and along the ith direction, ie, the second dimension, and the dimming member can surround The first direction and the second direction are orthogonal to each other and rotate. The projection optical system group in which the 阑=== and the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 22--exposure device, characterized in that: the scope of the application for illumination is as follows: the center: the base plate, the optical system, and (4) I* + as stated in claim 22 of the patent scope The exposure device includes a method of forming an image of the predetermined trapped pattern on the sensing substrate: == 44 201015239 όζζ / /pif.doc system 'and making the above-mentioned regulations with respect to the projection (four) And the photosensitive substrate > 'α is relatively moved in the scanning direction to project and expose the predetermined pattern onto the sensory substrate. 24. The exposure apparatus of claim 23, wherein the scanning direction corresponds to a direction orthogonal to the predetermined direction. 25. A method of manufacturing a component, characterized in that: ???exposure step of exposing said prescribed job to a photosensitive substrate using an exposure apparatus as described in any one of claims 22 to 24; a developing step of forming a photomask layer corresponding to the predetermined image on the photosensitive substrate on which the predetermined pattern is transferred is formed on a surface of the photosensitive substrate; and/processing step 'via the photomask layer pair The surface of the above-mentioned sense substrate is processed. ❹ 45
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