201001566 九、發明說明： 【發明所屬之技術領域】 本發明係有關於半導體裝置之製造技術，特別 關於一種晶片拾取治具與方法，可應用於半導體封 程或/與半導體晶片組襄過程。 【先前技術】 有關半導體封裝件之封裝技術，大致係利用包 圓切割裝置、黏晶裝置、加熱裝置、銲線裝置以及 裝置之封裝設備，依序進行晶圓切割（die saw)、黏晶 bond)、打線（wire bond)、封膠（m〇id)、剪切 / (trim/form)、印字（mark)、電鍍（plating)以及 (inspection)等等主要步驟。 一般而言’當製程加工完成之晶圓（wafer)上之 (die)經由晶片切割步驟予以分離之後，接下來係進 裝製程中重要之黏晶步驟。黏晶係利用一晶片拾取 將一顆顆已分離之晶片由一膠帶取出並分別放置 晶片承載件上’該晶片承載件可為導線架、基板或 具有預置區之等效元件。然後黏晶完成後之晶片承 則經由傳輸设備送至彈匣（magazine)内，以送至下 程進行打線作業或其它電性連接作業。在該些晶片 件上完成必要的内部電性連接作業之後，會以封裝 (molding compound)將晶片包覆，以避免濕氣、熱 雜訊的影響。然而，在未包覆封裝膠體之前，外界 (particles)或灰塵容易掉附至該些晶片承載件上而 係有 裝製 括晶 封膠 j (die 成型 檢驗 晶片 行構 治具 於一 其他 載件 一製 承載 膠體 量、 微粒 使其 201001566 受到污染，使得習知半導體封裝件之製程良率 降低。 此外，由於傳統的晶片表面不具有黏性’故 在該些晶片承載件形成一黏晶層，例如環j (epoxy)、銀膠（sliverpaste)、或是雙面膠片’以 晶片。為簡化製程，會在晶圓之背面貼附一晶粒 (die attach layer)，一種半固化黏性樹脂，具有 動以包覆銲線之特性，特別適用於多晶片堆疊， 之為膜覆線（FOW, Film-Over-Wire)技術。然在晶 步驟中，當利用切割刀具切割穿過該晶圓及該晶 層使其分離時，由於該晶粒貼附層之黏著特性， 在晶圓切割道產生毛邊或與鄰近晶片產生沾： 象，導致後續黏晶步驟時，該晶片拾取治具在吸 時，產生吸取雙重晶片（double die)之現象，影 體封裝品質與成本。 【發明内容】 有鑒於此，本發明之主要目的係在於提供一 拾取治具與方法，主要用以解決上述問題。在拾 晶片時，目標晶片與非目標晶片不會產生沾黏， 效清除晶片表面上之微粒與灰塵，進而提高半導 件之製程良率與減少製程成本。 本發明的目的及解決其技術問題是採用以下 案來實現的。依據本發明所揭示之一種晶片拾取 主要包含一連接板、一吸嘴以及複數個吹氣喷槍 (yield) 早期會 I樹脂 供黏貼 貼附層 受熱流 並被稱 圓切割 粒貼附 在往會 黏之現 取晶片 響半導 種晶片 取目標 並能有 體封裝 技術方 治具， 。該吸 6 201001566 嘴係概約設置於該連接板之中心，用以吸取一目標晶 片。該些吹氣喷槍係位於該連接板之周邊，用以提供吹 力以壓制鄰近該目標晶片之複數個非目標晶片。 本發明的目的及解決其技術問題還可採用以下技術 措施進一步實現。 在前述晶片拾取治具中，該些吹氣喷槍係可為對稱 配置，並且該吸嘴係位於該些吹氣噴槍的中心點位置。 在前述晶片拾取治具中，可另包含有一吸附墊，其 係設置貼附於該吸嘴之一吸孔。 在前述晶片拾取治具中，該吸附墊係可為一多孔隙 橡膠片。 在前述晶片拾取治具中，該些吹氣喷槍係可具有複 數個喷氣孔，其係大致水平地對齊但不超出該吸附墊之 一吸附面。 在前述晶片拾取治具中，該些吹氣喷槍之該些喷氣 孔係可為狹長槽口，以提供條狀的吹力。 在前述晶片拾取治具中，該些吹氣喷槍之該些喷氣 孔係可為管狀開口 ，以提供多點狀的吹力。 在前述晶片拾取治具中，該些吹氣喷搶係可為離子 喷搶。 本發明還揭示一種晶片拾取方法，主要步驟包含： 首先，提供一如上所述之晶片拾取治具。接著，提供一 膠帶，其上貼附有該目標晶片以及鄰近該目標晶片之複 數個非目標晶片。之後，推升該目標晶片，以使其不與 7 .201001566 該些非目標晶片為共平面。之後，下降該晶片拾取治 具，直到該吸嘴吸取到該目標晶片。最後，上升該晶片 拾取治具，以使該目標晶片由該膠帶分離，並由該些吹 氣喷槍提供吹力，以壓制鄰近該目標晶片之該些非目標 晶片。 由以上技術方案可以看出，本發明之晶片拾取治 具，具有以下優點與功效： 一、 在拾取目標晶片時，鄰近的非目標晶片不會沾黏於 ' 目標晶片，解決習知拾取目標晶片時產生吸取雙重 晶片（double die)之問題。 二、 在拾取目標晶片時，同時清除晶片表面上之微粒或 灰塵，避免污染晶片，進而提高製程良率與降低成 本。 三、 吹氣喷槍不會表面接觸到欲分離之非目標晶片，故 可達到無印痕及不會損壞晶片表面積體電路之功 L 效。 四、 在拾取目標晶片時，同時可消除靜電。 【實施方式】 依據本發明之一具體實施例，一種晶片拾取治具舉 例說明於第1圖之截面示意圖。該晶片拾取治具1 00主 要包含一連接板1 1 0、一吸嘴1 2 0以及複數個吹氣喷槍 130 ° 如第1圖所示，該吸嘴120係概約設置於該連接板 1 10之中心，用以吸取一目標晶片10(如第4及5圖所 8 .201001566 示）。具體而言，該吸嘴1 2 0之中心係具有一吸孔1 2 1， 該吸孔1 2 1係以真空管線連接一真空源（圖未繪出），透 過該吸孔1 2 1用以形成一真空通路，使著該吸嘴1 2 0得 以產生一吸附力。而為了強化該吸嘴1 2 0之剛性，該吸 嘴1 20可由剛性金屬所製成，例如不銹鋼材質。在一具 體實施例中，如第1圖所示，該晶片拾取治具1 00可另 包含有一吸附墊1 40，其係設置貼附於該吸嘴1 20之該 吸孔1 2 1。具體而言，該吸附墊1 40係可為一多孔隙橡 f . 膠片，該吸附墊1 40係可概為一具有彈性之矩形片，該 些孔隙可呈等間距分布，用以平均分散真空源之真空壓 力。一吸附面1 4 1係位於該吸附墊1 40之底部，其係為 一平整之接觸面。在黏晶步驟時，使該目標晶片1 0表 面受力平均於該吸附面1 4 1，並減少該目標晶片1 0表 面因接觸摩擦而受損或刮傷。 如第1圖所示，該些吹氣喷槍1 3 0係位於該連接板 (' 110之周邊，用以提供吹力以壓制鄰近該目標晶片10 之複數個非目標晶片20(如第4及5圖所示）。如第1及 6圖所示，該些吹氣喷搶1 3 0係可為對稱配置，並且該 吸嘴1 2 0係可位於該些吹氣喷搶1 3 0的中心點位置，換 言之，由該吸嘴1 2 0至每一吹氣喷槍1 3 0的距離可概約 相等。 如第1圖所示，較佳地，該些吹氣喷槍13 0係可具 有複數個喷氣孔1 3 1，其係大致水平地對齊但不超出該 吸附墊1 4 0之一吸附面1 4 1，避免該些吹氣喷槍1 3 0之 9 201001566 該些喷氣孔不會直接接觸到非目標晶片2〇(如第4 及5圖所示）。 請參閱第1至5圖所示，本發明進一步說明使用該 晶片拾取治具1 〇 〇之晶片拾取方法’以彰顯本案的功 效。首先’如第1圖所示’提供一如上所述之晶片拾取 治具1 0 0。 接著’如第2圖所示，提供一膠帶3 0，其上貼附有 . 該目標晶片1 〇以及鄰近該目標晶片1 0之複數個非目標 ' 晶片20。該膠帶30係可為晶圓切割膠帶，並且該目標 晶片1 0與該些鄰近之非目標晶片20係由同一晶圓切割 形成，其係利用一切割刀具（例如鑽石刀片）依照預先設 定好之切割道（scribe line)，將該晶圓切割成複數個分 離之晶片1 0、2 0。該膠帶3 0係具有可拉張伸展之特性， 可選自紫外線膠帶（UV tape)、熱分離膠帶（thermal tape) 或藍膜（blue tape)之其中一種。 (,'j 該目標晶片10係具有一主動面11與一背面12’該 主動面1 1上係設有積體電路元件’如微控制器、微處 理器、記憶體、邏輯電路、特殊應用積體電路（如顯示 器驅動電路）等或上述之組合。在本實施例中，該目標 晶片1 0在朝向該膠帶3 0之該背面1 2係形成有一晶粒 貼附層13(dieattachlayer)’以貼附於該膠▼ 30。較佳 地，該晶粒貼附層1 3係可具有不完全固化的銲線包覆 特性，例如B階黏膠層，玎應用於採用膜覆線（F 〇w) 技術的多晶片堆疊。在不同實施例中’該晶粒貼附層 10 201001566 1 3亦可為雙面黏性膠帶。 之後，如第3圖所示，推升該目標晶片10，以使該 目標晶片1 〇不與該些非目標晶片20為共平面，以方便 該晶片拾取治具1 00對準與拾取。在推升該目標晶片 1 0之前，該膠帶3 0可業經照射紫光線或加熱製程而喪 失黏性。在本實施例中，可使用一階段式頂針2 0 0推升 該目標晶片10之中央’以使該晶粒貼附層1 3在該目標 晶片1 0之周邊之一部位預先與該膠帶3 0分離，以方便 ' 該目標晶片1 0能由該膠帶3 0剝除，減少該晶粒貼附層 1 3的沾黏影響，以順利取出該目標晶片1 0。 之後，如第4圖所示，下降該晶片拾取治具100， 直到該吸嘴1 20之該吸附墊1 40之該吸附面1 4 1吸取到 該目標晶片1 〇。並且利用連接於該吸孔1 2 1之真空源 施加一真空吸力，再藉由該吸嘴1 20中形成之真空通路 來吸取該目標晶片1 0。 I 最後，如第5圖所示，上升該晶片拾取治具100, 以使該目標晶片1 0由該膠帶3 0分離，並由該些吹氣喷 槍1 3 0提供吹力（如第4及5圖所示），以壓制鄰近該目 標晶片10之該些非目標晶片 20，使其不會沾黏在一 起，而產生吸取雙重晶片（double die)之問題。在對該 些非目標晶片2 0提供吹力之同時，除了可使該目標晶 片1 0與該些非目標晶片20分離外，亦可同時將附著在 該些非目標晶片2 0表面之微粒或灰塵吹離以及可消除 靜電，避免污染該些非目標晶片20，進而提高製程良 11 201001566 率與降低成本。此外，由於該些吹氣喷槍1 3 0不會表面 接觸到預分離之該些非目標晶片 2 0，故可達到無印痕 (ink)及不會損壞晶片電路之功效。 如第 6圖所示，在一實施例中，該些吹氣喷槍13 0 之該些噴氣孔 1 3 1係可為狹長槽口，以提供條狀的吹 力，以沿著該些非目標晶片20之側邊提供線狀之壓制 力，可更易於分離。 如第7圖所示，在另一變化實施例中，該些吹氣喷 槍1 3 0之該些噴氣孔1 3 1係可為管狀開口，以提供多點 狀的吹力，可分散吹力，均勻吹離晶片表面之微粒與灰 塵。較佳地，該些吹氣喷槍1 3 0係可為離子喷槍，其氣 流與離子濃度為可以調整，該些吹氣喷槍1 3 0係可藉由 管路連接空氣壓縮機並經過一離子源，達到正負電荷平 衡，以消除該些晶片1 0與2 0之靜電。 以上所述，僅是本發明的較佳實施例而已，並非對 本發明作任何形式上的限制，本發明技術方案範圍當依 所附申請專利範圍為準。任何熟悉本專業的技術人員可 利用上述揭示的技術内容作出些許更動或修飾為等同 變化的等效實施例，但凡是未脫離本發明技術方案的内 容，依據本發明的技術實質對以上實施例所作的任何簡 單修改、等同變化與修飾，均仍屬於本發明技術方案的 範圍内。 【圖式簡單說明】 第1圖：為依據本發明之一具體實施例的一種晶片拾取 12 201001566 治具之截面示意圖。 第2圖：在本發明之一具體實施例中一種晶片拾取方法 中繪示提供一膠帶之示意圖。 第3圖：在本發明之一具體實施例中繪示推升一膠帶上 目標晶片之不意圖。 第4圖：在本發明之一具體實施例中繪示下降晶片拾取 治具之示意圖。 第5圖：在本發明之一具體實施例中繪示上升晶片拾取 治具之示意圖。 第6圖：為依據本發明之一具體實施例的晶片拾取治具 之仰視圖。 第7圖：為依據本發明之另一變化實施例的晶片拾取治 具之仰視圖。 【主要元件符號說明】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing technique of a semiconductor device, and more particularly to a wafer pickup jig and method which can be applied to a semiconductor package or/and a semiconductor wafer assembly process. [Prior Art] Regarding the packaging technology of the semiconductor package, the package cutting device of the circular cutting device, the die bonding device, the heating device, the wire bonding device, and the device are generally used to sequentially perform die sawing and die bonding. Main steps such as wire bond, seal (m〇id), cut/trim/form, mark, plating, and (inspection). In general, after the process-processed wafer is separated by a wafer dicing step, an important die bonding step in the loading process is followed. The die bond system utilizes a wafer pick-up to remove a single separated wafer from a tape and place it on a wafer carrier. The wafer carrier can be a lead frame, a substrate, or an equivalent component having a pre-set area. Then, the wafer carrier after the completion of the die bonding is sent to the magazine through the transfer device to be sent to the next line for wire bonding work or other electrical connection work. After the necessary internal electrical connection work is completed on the wafers, the wafers are coated with a molding compound to avoid the effects of moisture and thermal noise. However, before the encapsulation colloid is uncoated, particles or dust are easily attached to the wafer carriers and the package is filled with a sealant j (die molding inspection wafer row fixture is used for one other carrier) The amount of colloidal material and the particles make the 201001566 contaminated, which reduces the process yield of the conventional semiconductor package. Furthermore, since the conventional wafer surface does not have a viscosity, a silicious layer is formed on the wafer carriers. For example, ring j (epoxy), silver paste (sliverpaste), or double-sided film 'wafer. To simplify the process, a die attach layer, a semi-cured adhesive resin, is attached to the back side of the wafer. It has the characteristics of moving to cover the wire, especially suitable for multi-wafer stacking, which is FOW (Film-Over-Wire) technology. However, in the crystal step, when cutting through the wafer with a cutting tool and When the crystal layer is separated, due to the adhesive property of the die attach layer, when the wafer scribe line is burred or is smeared with the adjacent wafer, the wafer picking jig is sucked during the subsequent die bonding step. The phenomenon of picking up a double die, the quality and cost of the shadow package. In view of the above, the main object of the present invention is to provide a picking jig and a method for solving the above problems. When the wafer is used, the target wafer and the non-target wafer are not sticky, and the particles and dust on the surface of the wafer are removed, thereby improving the process yield of the semiconductor and reducing the process cost. The object of the present invention and the technical problem thereof are to adopt According to the present invention, a wafer pickup mainly comprises a connecting plate, a nozzle and a plurality of blowing lances. The early I resin is used for the adhesive layer to be heated and is rounded. The granules are attached to the wafers and the semi-conductive wafers are taken to the target and can be packaged with a body-packaging technology. The suction 6 201001566 is generally placed at the center of the connecting plate to absorb a target. The air blowing guns are located around the connecting plate to provide a blowing force to press a plurality of non-target wafers adjacent to the target wafer. The purpose of the invention and solving the technical problems can be further achieved by the following technical measures. In the foregoing wafer pick-up jig, the blow guns can be symmetrically arranged, and the nozzles are located at the center of the blow guns. In the foregoing wafer pick-up jig, an adsorption pad may be further disposed to be attached to one of the suction holes of the nozzle. In the above wafer pick-up jig, the adsorption pad may be a porous rubber In the foregoing wafer pick-up jig, the blow guns may have a plurality of gas jet holes which are substantially horizontally aligned but do not extend beyond one of the adsorption faces of the adsorption pad. In the aforementioned wafer pick-up jig, the The air vents of the air blasting guns may be elongated slots to provide a strip of blowing force. In the above wafer pick-up jig, the air holes of the air blasting guns may be tubular openings to provide a multi-point blow force. In the aforementioned wafer pick-up jig, the blow-blasting systems may be ion jet blasting. The present invention also discloses a wafer picking method, the main steps comprising: First, providing a wafer pick-up jig as described above. Next, a tape is attached to which the target wafer and a plurality of non-target wafers adjacent to the target wafer are attached. Thereafter, the target wafer is pushed up so that it is not coplanar with the non-target wafers of 7.201001566. Thereafter, the wafer picking tool is lowered until the nozzle picks up the target wafer. Finally, the wafer is raised to pick up the fixture to separate the target wafer from the tape, and the blowing guns provide a blowing force to suppress the non-target wafers adjacent to the target wafer. It can be seen from the above technical solution that the wafer pick-up jig of the present invention has the following advantages and effects: 1. When picking up the target wafer, the adjacent non-target wafer does not stick to the 'target wafer, and the conventional pick-up target wafer is solved. This creates the problem of picking up double dies. Second, when picking up the target wafer, it simultaneously removes particles or dust on the surface of the wafer to avoid contamination of the wafer, thereby improving process yield and reducing cost. 3. The blow gun does not surface contact with the non-target wafer to be separated, so that the work without the mark and the damage of the wafer surface area circuit can be achieved. 4. When picking up the target wafer, static electricity can be eliminated at the same time. [Embodiment] A wafer pick-up jig according to an embodiment of the present invention is illustrated in a cross-sectional view of Fig. 1. The wafer picking fixture 100 mainly includes a connecting plate 110, a nozzle 120, and a plurality of blowing guns 130°. As shown in FIG. 1, the nozzle 120 is disposed substantially on the connecting plate. The center of 1 10 is used to draw a target wafer 10 (as shown in Figures 4 and 5 of Fig. 201001566). Specifically, the center of the nozzle 120 has a suction hole 1 2 1 , and the suction hole 1 2 1 is connected to a vacuum source (not shown) by a vacuum line, and the suction hole 1 2 1 is used. To form a vacuum path, the nozzle 120 is capable of generating an adsorption force. To enhance the rigidity of the nozzle 120, the nozzle 1 20 may be made of a rigid metal such as stainless steel. In a specific embodiment, as shown in Fig. 1, the wafer pick-up jig 100 may further include a suction pad 144 which is attached to the suction hole 1 21 of the nozzle 120. Specifically, the adsorption pad 140 can be a porous rubber film, and the adsorption pad 140 can be an elastic rectangular piece, and the apertures can be equally spaced to uniformly disperse the vacuum. The vacuum pressure of the source. An adsorption surface 141 is located at the bottom of the adsorption pad 140, which is a flat contact surface. In the die bonding step, the surface of the target wafer 10 is subjected to force on the adsorption surface 141, and the surface of the target wafer 10 is reduced or scratched due to contact friction. As shown in FIG. 1, the air blasting guns 130 are located at the periphery of the connecting plate ('110) for providing a blowing force to press a plurality of non-target wafers 20 adjacent to the target wafer 10 (eg, 4th) And Figure 5). As shown in Figures 1 and 6, the blow blasting 130 can be a symmetrical configuration, and the nozzle 120 can be located in the blow squirt 1 3 0 The center point position, in other words, the distance from the nozzle 120 to each blow gun 130 may be approximately equal. As shown in Fig. 1, preferably, the blow guns 130 The system may have a plurality of gas jet holes 13 3 , which are substantially horizontally aligned but do not exceed one of the adsorption pads 1 4 0 of the adsorption surface 1 4 1 , avoiding the blowing guns 1 3 0 of 9 201001566 The air holes do not directly contact the non-target wafer 2 (as shown in Figures 4 and 5). Referring to Figures 1 to 5, the present invention further describes a wafer picking method using the wafer pick-up jig 1' To demonstrate the efficacy of the case. First, 'provide a wafer picking fixture 100 as described above as shown in Fig. 1. Next' as shown in Fig. 2, a tape 30 is provided thereon. Attached to the target wafer 1 and a plurality of non-target wafers 20 adjacent to the target wafer 10. The tape 30 can be a wafer dicing tape, and the target wafer 10 and the adjacent non-target wafers The 20 series is formed by cutting from the same wafer, and the wafer is cut into a plurality of separate wafers 10, 20 by a cutting tool (for example, a diamond blade) according to a preset scribe line. The tape 30 has the characteristics of stretchable stretching, and may be selected from one of a UV tape, a thermal tape, or a blue tape. (, 'j The target wafer 10 has An active surface 11 and a back surface 12' are provided with integrated circuit components such as a microcontroller, a microprocessor, a memory, a logic circuit, a special application integrated circuit (such as a display driving circuit), and the like. Or in combination of the above, in the embodiment, the target wafer 10 is formed with a die attach layer 13 on the back surface 1 2 facing the tape 30 to be attached to the glue ▼ 30. Preferably, the die attach layer 13 is There are incompletely cured wire bond features, such as B-stage adhesive layers, applied to multi-wafer stacks using film-wrapped (F 〇w) technology. In different embodiments, the die attach layer 10 201001566 1 3 may also be a double-sided adhesive tape. Thereafter, as shown in FIG. 3, the target wafer 10 is pushed up so that the target wafer 1 is not coplanar with the non-target wafers 20 to facilitate the wafer. The pick jig is aligned and picked up by 100. Before the target wafer 10 is pushed up, the tape 30 may lose its viscosity by irradiating the purple light or heating process. In this embodiment, the center of the target wafer 10 can be pushed up using a one-stage thimble 200 to advance the die attach layer 13 with the tape 3 at a portion of the periphery of the target wafer 10. 0 is separated to facilitate 'the target wafer 10 can be stripped by the tape 30, reducing the adhesion of the die attach layer 13 to smoothly take out the target wafer 10. Thereafter, as shown in Fig. 4, the wafer pick-up jig 100 is lowered until the suction face 141 of the suction pad 140 of the nozzle 120 is sucked to the target wafer 1 〇. A vacuum suction is applied to the vacuum source connected to the suction hole 112, and the target wafer 10 is sucked by the vacuum path formed in the nozzle 120. I Finally, as shown in FIG. 5, the wafer pick-up jig 100 is raised to separate the target wafer 10 from the tape 30, and the blowing force is provided by the blow guns 130 (eg, 4th) And 5 are shown to suppress the non-target wafers 20 adjacent to the target wafer 10 so as not to stick together, thereby creating the problem of picking up double dies. While the non-target wafer 20 is provided with a blowing force, in addition to separating the target wafer 10 from the non-target wafers 20, particles adhering to the surface of the non-target wafers 20 or The dust is blown off and the static electricity can be eliminated to avoid contamination of the non-target wafers 20, thereby improving the process rate and reducing the cost. In addition, since the blow guns 130 are not in surface contact with the pre-separated non-target wafers 20, the effects of inklessness and damage to the wafer circuit can be achieved. As shown in FIG. 6, in an embodiment, the air holes 13 1 of the air blowing guns 130 may be elongated slots to provide a strip-shaped blowing force to follow the The side edges of the target wafer 20 provide a linear pressing force for easier separation. As shown in FIG. 7, in another modified embodiment, the air vents 133 of the air blasting guns 130 may be tubular openings to provide a multi-point blow force, which can be dispersed and blown. Force, evenly blowing particles and dust off the surface of the wafer. Preferably, the air blasting guns 130 can be an ion lance, and the airflow and ion concentration can be adjusted. The air blasting guns 130 can be connected to the air compressor through a pipeline. An ion source achieves positive and negative charge balance to eliminate static electricity of the wafers 10 and 20. The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. The scope of the present invention is defined by the scope of the appended claims. Any person skilled in the art can make some modifications or modifications to the equivalent embodiments by using the technical content disclosed above, but the content of the technical solution of the present invention is made according to the technical essence of the present invention without departing from the technical solution of the present invention. Any simple modifications, equivalent changes and modifications are still within the scope of the technical solutions of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a wafer picking 12 201001566 jig according to an embodiment of the present invention. Fig. 2 is a schematic view showing the provision of a tape in a wafer picking method in an embodiment of the present invention. Fig. 3 is a schematic view showing the purpose of pushing up a target wafer on a tape in an embodiment of the present invention. Figure 4 is a schematic illustration of a descending wafer pick-up jig in one embodiment of the invention. Figure 5 is a schematic illustration of a rising wafer pick-up jig in one embodiment of the invention. Figure 6 is a bottom plan view of a wafer pickup jig in accordance with an embodiment of the present invention. Figure 7 is a bottom plan view of a wafer pick-up tool in accordance with another variant embodiment of the present invention. [Main component symbol description]
10 目標晶片 11 主動面 12 背面 13 晶粒貼附層 20 非目標晶片 30 膠帶 100 晶片拾取治具 110 連接板 120 吸嘴 121 吸孔 130 吹氣喷槍 13 1 喷氣孔 140 吸附墊 141 吸附面 200 階段式頂針 1310 target wafer 11 active surface 12 back surface 13 die attach layer 20 non-target wafer 30 tape 100 wafer pick-up jig 110 connecting plate 120 nozzle 121 suction hole 130 blowing air gun 13 1 air hole 140 adsorption pad 141 adsorption surface 200 Stage thimble 13