201008400 六、發明說明： 【發明所屬之技術領域】 本發明係關於對液晶顯示裝置（LCD)等之平面面板 顯示器（FPD )製造用之基板等之被處理體施予電漿處理 的感應耦合電漿處理裝置。 【先前技術】 φ 在液晶顯示裝置（LCD )等之製造工程中，爲了對玻 璃基板施予特定處理，使用電漿蝕刻裝置或電漿CVD成 膜裝置等之各種電槳處理裝置。如此之電漿處理裝置，以 往多使用電容耦合電漿處理裝置，但是近來則注目於感應 稱合電獎（Inductively Coupled Plasma: ICP)處理裝置 ，該具有可以取得高真空度且高密度之電漿的大優點。 感應耦合電漿處理裝置係在收容被處理體之處理容器 之介電體窗之外側，配置高頻天線，對處理容器內供給處 〇 理氣體，並且對該高頻天線供給高頻電力，依此使處理容 器內產生感應耦合電漿，並藉由該感應耦合電漿，對被處 理體施予特定電漿處理。作爲感應耦合電漿處理裝置之高 頻天線，大多使用平面狀構成特定圖形的平面天線。 在如此使用平面天線之感應耦合電漿處理裝置中，雖 然在處理容器內之平面天線正下方之空間生成電漿，但是 此時由於與天線正下方之各位置的電場強度呈比例持有高 電漿密度區域和低電漿區域之分布，故平面天線之圖案形 狀成爲決定電漿密度分布之重要因素。 -5- 201008400 然而，一台感應耦合電漿處理裝置應對應之應用不限 於一個，必須對應於多數應用。此時，爲了在各個應用中 ，執行均勻處理，必須使電漿密度分布變化，因此，以使 高密度區域及低密度區域之位置不同之方式，多數準備不 同形狀之天線，因應應用執行更換天線。 但是，對應於多數應用準備多數天線，每次應用執行 交換需要花費很多勞力，再者，近來由於LCD用之玻璃 基板大型化，故天線製造費用也成爲高價。再者，如此一 來即使準備多數天線，在所提供的應用中不見得是最佳條 件，不得不藉由調整製程條件來對應。 對此，在專利文獻1中，揭示有將渦旋形天線分割成 內側部分和外側部分之兩個而設置，在至少一方之天線部 分設置可變電容器等之阻抗調節手段，藉由依此所構成之 阻抗調節，控制上述兩個天線部分之電流値，並控制被形 成在處理室內之感應耦合電漿之密度分布的技術。 在上述專利文獻1之技術中，在渦旋形天線之內側部 分和外側部分之正下方，雖然形成對應於藉由天線所形成 之電場的強度之電漿，但是藉由電漿擴散於水平方向，能 均勻控制電漿密度分布。但是，當基板之1邊長度超過 而成爲大型化之時，則無法充分發揮擴散效果，由於 容易反映天線圖案之密、疏分布，故有電漿分布惡化之傾 向。再者，如此一來，當基板爲大型化之時，在天線配置 區域電場強度分布產生差異，依此電漿分布也成爲不均勻 -6- 201008400 〔專利文獻1〕日本特開2007-311182號公報 【發明內容】 (發明所欲解決之課題） 本發明係鑑於如此之情形而所硏究出，其目的爲提供 即使對大型基板，亦可以取得均勻電漿分布之感應耦合電 漿處理裝置。 ❹ (用以解決課題之手段） 爲了解決上述課題，本發明提供一種感應耦合電漿處 理裝置，其特徵爲；具備處理室，用以收容被處理體而施 予電漿處理；載置台，用以在上述處理容器內載置被處理 體；處理氣體供給系統，用以對上述處理室內供給處理氣 體；排氣系統，用以將上述處理室內予以排氣；高頻天線 ，具有被設置成同心狀之3個以上的天線部，係隔著介電 〇 體構件而被配置在上述處理室之外部，並藉由被供給高頻 電力’在上述處理室內形成感應電場；和阻抗調節手段， 用以調節包含上述各天線部之天線電路中之至少一個阻抗 ’依此控制上述天線部之電流値，上述各天線部構成多數 天線線被配置成渦旋狀而所形成之多層天線，且以在其配 置區域形成均勻之電場的方式設定其捲繞方式，並以在各 天線部之配置區域間能夠使電場均勻化之方式設定其捲數 在本發明中’被處理體構成矩形狀，上述天線部可以 201008400 設爲以成爲略矩形狀之方式配置天線的構成。此時，上述 天線部係以在略矩形狀之各邊之中央部之捲數少於其他部 分之方式設定捲繞方式之形態爲佳。再者，上述高頻天線 係以從內側天線部朝向外側天線部捲數變少之方式設定各 天線部的捲數爲佳。 上述阻抗調節手段可以設爲被連接於含有上述各天線 部之天線電路中之至少一個，調節其被連接的天線電路之 阻抗的構成。此時，上述阻抗調節手段具可以設爲具有可 變電容器者。再者，亦可以設爲又具有控制手段之構成， 事先設定取得每次運用最適合之電漿密度分布的上述阻抗 調節手段之調節參數，於選擇特定之應用時，以成爲事先 設定對應於應用之上述阻抗調節手段之調節參數的最佳値 之方式，控制上述阻抗調節手段。 〔發明效果〕 若藉由本發明，因使用具有被設置成同心狀之3個以 上天線部，當作在處理室內形成感應電場之高頻天線，故 即使在基板之尺寸爲大型之時，也難以產生隨著基板尺寸 大型化而導致在各天線部之間的電漿密度下降的電漿不均 勻。再者，各天線部構成多數天線線被配置成渦旋狀而所 形成之多層天線，且以在其配置區域形成均勻之電場的方 式設定其捲繞方式之形態，並以在各天線部之配置區域間 能夠使電場均勻化之方式設定其捲數，故可以使隨著電場 強度之不均勻而導致電漿不均勻之情形難以產生。 -8 - 201008400 【實施方式】 以下參照附件圖面針對本發明之實施型態予以說明。 第1圖爲表示本發明之一實施形態所涉及之感應耦合電漿 處理裝置之剖面圖，第2圖爲表示該感應耦合電漿處理裝 置所使用之高頻天線之俯視圖。該裝置係使用於例如在 FPD用玻璃基板上形成薄膜電晶體之時之金屬膜、ITO膜 、氧化膜等之鈾刻或光阻膜之灰化處理。在此，就以FPD φ 而言例示有液晶顯示器（LCD )、電激發光（Electro Luminescence: EL)顯示器，電獎顯示面板（PDP)等。 該電漿處理裝置具有由導電性材料，例如內壁面被陽 極氧化處理之由鋁所構成之角筒形狀之氣密本體容器1。 該本體容器1被組裝成可分解，藉由接地線la被接地。 本體容器1係藉由介電體壁2上下區分成天線室3及處理 室4。因此，介電體壁2構成處理室4之天井壁。介電體 壁2係由Al2〇3等之陶瓷、石英等所構成。 Φ 在介電體壁2之下側部分，嵌入有處理氣體供給用之 噴淋框體11。噴淋框體11係被設置成十字狀，成爲從下 方支撐介電體壁·2之構造。並且，支撐上述介電體壁2之 噴淋框體11，藉由多數根之吊桿（無圖示），成爲被吊於 本體容器1之天井之狀態。 該噴淋框體11係由導電性材料，最佳爲金屬，例如 以不產生污染物之方式在其內面施予陽極氧化處理之鋁所 構成。在該噴淋框體11形成有延伸於水平之氣體流路12 ，在該氣體流路12，連貫有朝下方延伸之多數氣體吐出孔 -9 - 201008400 12a。另外，在介電體壁2之上面中央，以連通於該氣體 流路12之方式設置有氣體供給管20a。氣體供給管20a從 本體容器1之天井朝其外側貫通，連接於含有處理氣體供 給源及閥系統等之處理氣體供給系統20。因此，在電漿處 理中，自處理氣體供給系統20被供給之處理氣體經氣體 供給管2 0a被供給至噴淋框體11內，從其下面之氣體供 給孔12a被吐出至處理室4內。 在本體容器1中之天線室3之側壁3a和處理室4之 側壁4a之間，設置有突出於內側之支撐架5，在該支撐架 5上載置介電體壁2。 在天線室3內，於介電體壁2上，以面對於介電體壁 2之方式配置有高頻（RF)天線13。該高頻天線13係藉 由由絕緣構件所構成之間隔物1 7而自介電體壁2間隔開 〇 第2圖爲模式性表示高頻天線13之俯視圖。如該圖 所示般，高頻天線1 3係同心配置外側天線部1 3 a、內側天 線部13b，和中間天線部13c而所構成，該外側天線部 13a係在外側部分緊密配置天線線而所構成，該內側天線 部13b係在內側部分緊密配置天線線而所構成，該中間天 線部係在該些中間部分緊密配置天線線而所所構成。該些 外側天線部1 3 a、內側天線部1 3 b以及中間天線部1 3 c係 構成將多數天線線形成渦旋狀之多層天線。 外側天線部13a係使4個天線線各偏移90°而配置成 全體成爲略矩形狀，其中央部成爲空間。再者，成爲經4 201008400 個端子22a而對各天線線供電。再者，各天線之外端部爲 了使天線線之電壓分布變化，經電容器18a而被連接於天 線室3之側壁而接地。但是，亦可不經電容器1 8a而直接 接地，並且即使在端子22a之部分或天線線之途中，例如 將電容器插入至例如彎曲部100a亦可。 再者，內側天線部13b係配置成在外側天線部13a之 中央部之空間將4個天線線各偏移90°而使全體成爲略矩 φ 形狀而構成。再者，成爲經中央之4個端子22b而對各天 線線供電。並且，各天線之外端部爲了使天線線之電壓分 布變化，經電容器18b而被連接於天線室3之上壁而接地 (參照第1圖）。但是，亦可不經電容器18b而直接接地 ，並且即使在端子22b之部分或天線線之途中，例如將電 容器插入至例如彎曲部100b亦可。 並且，在內側天線部13b之最外側之天線和外側天線 部1 3a之最內側之天線之間，形成大空間，在其空間內設 〇 置有上述中間天線部13C。外側天線部13c係使4個天線 線各偏移90°而配置成全體成爲略矩形狀，其中央部成爲 空間。再者，成爲經4個端子22c而對各天線線供電。再 者，各天線之外端部爲了使天線線之電壓分布變化，經電 容器18c而被連接於天線室3之上壁而接地（參照第丨圖 )。但是，亦可不經電容器18c而直接接地，並且即使在 端子2 2c之部分或天線線之途中，例如將電容器插入至例 如彎曲部100c亦可。 在該些外側天線部13a、內側天線部13b以及中間天 -11 - 201008400 線部13c之間’形成比各天線部之天線彼此之間隔更寬的 特定間隙。 外側天線部13a、內側天線部13b、中間天線部13c 係在該些配置區域，設定配置形態，使在該些配置區域中 電場強度成爲均勻。具體而言，在該些構成之矩形之各邊 之中央部，捲數少於其他部分。再者，外側天線部13a、 內側天線部13b、中間天線部13c係在該些配置區域，設 定捲數’使在該些配置區域間電場強度能夠均勻化。具體 而言’當將天線線配置成渦旋狀之時，一般因隨著往外側 移動天線線之長度變長，電場強度變大，故以從內側之天 線部朝向外側之天線部捲數減少之方式，例如在各邊之中 央部中’內側天線13b成爲4捲，中間天線部13c成爲3 捲，外側天線部13a成爲2捲。 在天線室3之中央部附近，設置有供電至外側天線部 13a之4根第1供電構件16a、供電至內側天線部13b之4 根第2供電件16b及供電至中間天線13c之4根第3供電 構件16c (在第1圖中僅一者僅圖式1根），各第1供電 構件16a之下端係被連接於外側天線部13a之端子22 a， 各第2供電構件16b之下端被連接於內側天線部13b之端 子22b，各第3供電構件16c之下端被連接於中間天線部 13c之端子22c。該些第1供電構件16a、第2供電構件 16b及第3供電構件16c經整合器14並聯連接於高頻電源 15。高頻電源15及整合器14被連接於供電線19,供電線 19係在整合器14之下游側分歧成供電線19a、19b及19c -12- 201008400 ，供電線19a被連接於4根之第1供電構件16a，供電線 19b被連接於4根之第2供電構件16b，供電線19c被連 接於4根之第3供電構件16c。 在供電線19a中間裝設有可變電容器21a，在供電線 19c中間裝設有可變電容器21c，在供電線19b中間不裝 設可變電容器。然後，藉由可變電容器21a和外側天線部 13a構成外側天線電路，藉由可變電容器21c和中間天線 參 部13c構成中間天線電路。另外，內側天線電路僅以內側 天線部13b構成。 如後述般，藉由調節可變電容器21a之電容，控制外 側天線電路之阻抗，藉由調節可變電容器21c之電容，控 制中間天線電路之阻抗，藉由該些控制，可以調整流動於 外側天線電路、內側天線電路及中間天線電路之電流的大 小關係。 在電漿處理中，自高頻電源15對高頻天線13供給感 〇 應電場形成用之例如頻率爲13.56MHz之高頻電力，如此 —來藉由供給高頻電力之高頻天線13，在處理室4內形成 感應電場，藉由該感應電場，使自噴淋框體11所供給之 處理氣體電漿化。此時之電漿密度分布，係藉由依據可變 電容器21a、21b控制外側天線部13a、內側天線部13b及 中間天線部1 3 c之阻抗而被控制。 在處理室4內之下方，以夾著介電體壁2與高頻天線 13對向之方式，設置有用以載置LCD玻璃基板G之載置 台23。載置台23係由導電性材料，例如表面被陽極氧化 -13- 201008400 處理之鋁所構成。被載置於載置台23之LCD玻璃基板G 係藉由靜電夾具（無圖式）被吸附保持。 載置台23係被收納於絕緣體框24內，並且被支撐於 中空之支柱25。支柱25係邊將本體容器1之底部維持氣 密狀態，邊被配設在本體容器1外之升降機構（無圖式） 所支撐，於基板G之搬入搬出時，載置台23藉由升降機 構在上下方向被驅動。並且，在收納載置台23之絕緣體 框24和本體容器1之底部之間，配設有氣密包圍支柱25 q 之波紋管26，依此即使藉由載置台23之上下移動，亦保 證處理容器4內之氣密性。再者，在處理容器4之側壁4a ，設置搬入搬出基板G之搬入搬出口 2 7a，和開關此之閘 閥27。 在載置台23藉由被設置在中空支柱25內之供電線 25a，經整合器28連接有高頻電源29。該高頻電源29係 在電漿處理中，對載置台23施加偏壓用之高頻電力，例 如頻率爲3.2MHz之高頻電力。藉由該偏壓用之高頻電力 ❹ ，被生成在處理室4內之電漿中之離子有效地被引入基板 G。 並且，在載置台23內設置有用以控制基板G之溫度 ，由陶瓷加熱器等之加熱手段或冷媒流路等所構成之溫度 控制機構，和溫度感測器（任一者皆無圖式）。相對於該 些機構或構件之配管或配線，任一者通過中空之支柱25 被導出至本體容器1外。 在處理室4之底部，經排氣管31連接有含有真空泵 -14- 201008400 等之排器裝置30，藉由該排氣裝置30排氣處理室4’在 電漿處理中，處理室4內被設定、維持在特定之真空氛圍 (例如 1. 3 3 P a )。 在被載置於載置台23之基板G之背面側，形成有冷 卻空間（無圖式），設置有用以供給當作一定壓力之熱傳 達用氣體之He氣體的He氣體流路41。如此一來，藉由 將熱傳達用氣體供給至基板G之背面側，可以在真空下回 φ 避基板G之溫度上升或溫度變化。 該電漿處理裝置之各構成部成爲被連接於由電腦所構 成之控制部50而被控制之構成。再者，控制部50上，連 接有由操作員爲了管理電漿處理裝置而執行指令之輸入操 作的鍵盤，或使電漿處理裝置之運轉狀況可視化而予以顯 示之顯示器等所構成之使用者介面51。並且，在製程部 5〇連接有記憶部52，該記憶部儲存有用以藉由製程部50 之控制實現在電漿處理裝置所實行之各種處理的控制程式 〇 ，或按處理條件使電漿處理裝置之各構成部實行處理之程 式即是處理程式。處理程式係被記憶於記憶部52之中的 記憶媒體。記憶媒體即使爲硬碟般之固定者亦可，即使爲 CD-ROM、DVD等之可搬運性者亦可。再者，即使自其他 裝置經例如專用線路適當傳送處理程式亦可。然後，依其 所需，以來自使用者介面51之指示等自記億部52叫出任 意處理程式，使控制部50實行，依此，在控制器50之控 制下，執行電漿處理裝置之所欲處理。 接著，針對高頻天線1 3之阻抗控制予以說明。第3 -15- 201008400 圖爲表示高頻天線13之供電電路之圖式。如該圖所示般 ，來自高頻電源15之高頻電力經整合器14被供給至外側 天線電路61a、內側天線電路61b及中間天線電路61c。[Technical Field] The present invention relates to an inductively coupled electric plasma treatment of a substrate to be processed such as a substrate for manufacturing a flat panel display (FPD) such as a liquid crystal display device (LCD). Slurry treatment unit. [Prior Art] φ In the manufacturing process of a liquid crystal display device (LCD) or the like, various electric paddle processing apparatuses such as a plasma etching apparatus or a plasma CVD film forming apparatus are used in order to impart a specific treatment to the glass substrate. In such a plasma processing apparatus, a capacitively coupled plasma processing apparatus has been conventionally used, but recently, an Inductively Coupled Plasma (ICP) processing apparatus having a high vacuum and a high density plasma can be obtained. Great advantage. The inductively coupled plasma processing apparatus is disposed outside the dielectric window of the processing container accommodating the object to be processed, and is provided with a high frequency antenna, supplies a processing gas to the processing container, and supplies high frequency power to the high frequency antenna. This causes an inductively coupled plasma to be generated in the processing vessel, and the inductively coupled plasma is used to impart a specific plasma treatment to the object to be processed. As the high-frequency antenna of the inductively coupled plasma processing apparatus, a planar antenna which forms a specific pattern in a planar shape is often used. In the inductively coupled plasma processing apparatus using the planar antenna as described above, although the plasma is generated in the space directly under the planar antenna in the processing container, at this time, the high electric power is held in proportion to the electric field intensity at each position directly below the antenna. The distribution of the slurry density region and the low plasma region, the pattern shape of the planar antenna becomes an important factor in determining the plasma density distribution. -5- 201008400 However, an inductively coupled plasma processing device should not be limited to one application and must correspond to most applications. At this time, in order to perform uniform processing in each application, it is necessary to change the plasma density distribution. Therefore, in order to make the positions of the high-density region and the low-density region different, most antennas of different shapes are prepared, and the antenna is replaced according to the application. . However, in order to prepare a plurality of antennas for most applications, it takes a lot of labor to perform an exchange every time. Further, since the glass substrate for LCDs has recently increased in size, the antenna manufacturing cost has become high. Moreover, even if a large number of antennas are prepared, it is not necessarily the best condition in the provided application, and it has to be adjusted by adjusting the process conditions. On the other hand, Patent Document 1 discloses that the spiral antenna is divided into two of an inner portion and an outer portion, and an impedance adjustment means such as a variable capacitor is provided in at least one of the antenna portions, thereby configuring The impedance adjustment controls the current 値 of the two antenna portions and controls the density distribution of the inductively coupled plasma formed within the processing chamber. In the technique of Patent Document 1, in the case where the plasma corresponding to the intensity of the electric field formed by the antenna is formed directly under the inner portion and the outer portion of the spiral antenna, the plasma is diffused in the horizontal direction. It can evenly control the plasma density distribution. However, when the length of one side of the substrate is increased and the size is increased, the diffusion effect is not sufficiently exhibited, and the dense and sparse distribution of the antenna pattern is easily reflected, so that the plasma distribution deteriorates. In addition, when the substrate is enlarged, the electric field intensity distribution in the antenna arrangement region is different, and the plasma distribution is also uneven. -6- 201008400 [Patent Document 1] JP-A-2007-311182 SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) The present invention has been made in view of such circumstances, and an object thereof is to provide an inductively coupled plasma processing apparatus capable of achieving uniform plasma distribution even for a large substrate. ❹ (Means for Solving the Problems) In order to solve the above problems, the present invention provides an inductively coupled plasma processing apparatus, comprising: a processing chamber for accommodating a processed object to be subjected to plasma processing; and a mounting table for use a processing object is placed in the processing container; a processing gas supply system for supplying a processing gas to the processing chamber; an exhaust system for exhausting the processing chamber; and a high frequency antenna having a concentricity Three or more antenna portions are disposed outside the processing chamber via a dielectric body member, and an induced electric field is formed in the processing chamber by supplying high-frequency power; and an impedance adjusting means is used Adjusting at least one of the impedances of the antenna circuits including the antenna portions to control the current 値 of the antenna portion, wherein each of the antenna portions constitutes a multilayer antenna in which a plurality of antenna lines are arranged in a spiral shape, and The arrangement pattern forms a uniform electric field to set the winding method, and the electric field can be made uniform between the arrangement regions of the antenna portions. Setting the number of volumes in which the formula of the present invention 'is processed rectangular configuration, the antenna unit may be configured to set 201008400 substantially rectangular shape of the antenna is arranged. In this case, it is preferable that the antenna portion has a form in which the number of windings in the central portion of each of the slightly rectangular sides is smaller than the other portions. Further, in the above-described high-frequency antenna, it is preferable to set the number of windings of each antenna portion so that the number of windings from the inner antenna portion toward the outer antenna portion is small. The impedance adjusting means may be configured to be connected to at least one of the antenna circuits including the antenna portions, and adjust the impedance of the connected antenna circuit. In this case, the impedance adjusting means may be a variable capacitor. Furthermore, it is also possible to provide a control means, and to set an adjustment parameter of the impedance adjustment means for obtaining the most suitable plasma density distribution for each application, and to select a specific application to be set in advance to correspond to the application. The impedance adjustment means is controlled in such a manner that the adjustment parameter of the impedance adjustment means is optimal. [Effect of the Invention] According to the present invention, since three or more antenna portions having concentric shapes are used as the high-frequency antenna for forming an induced electric field in the processing chamber, it is difficult to form a large-sized substrate when the size of the substrate is large. There is a generation of plasma unevenness in which the plasma density between the antenna portions is lowered as the size of the substrate is increased. Further, each of the antenna portions constitutes a multilayer antenna in which a plurality of antenna lines are arranged in a spiral shape, and a form of a winding method is set so as to form a uniform electric field in the arrangement region thereof, and is formed in each antenna portion. Since the number of windings can be set in such a manner that the electric field can be made uniform between the arrangement regions, it is difficult to cause the plasma to be uneven due to the uneven electric field strength. -8 - 201008400 [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. Fig. 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention, and Fig. 2 is a plan view showing a high frequency antenna used in the inductively coupled plasma processing apparatus. This apparatus is used for, for example, ashing of a uranium engraving or a photoresist film of a metal film, an ITO film, an oxide film, or the like, when a thin film transistor is formed on a glass substrate for FPD. Here, a liquid crystal display (LCD), an electroluminescence (EL) display, an electric prize display panel (PDP), and the like are exemplified as the FPD φ. This plasma processing apparatus has an airtight main body container 1 of a rectangular tube shape made of aluminum, which is made of an electrically conductive material, for example, an inner wall surface which is oxidized by an anode. The body container 1 is assembled to be decomposable and grounded by a ground line la. The main body container 1 is vertically divided into an antenna chamber 3 and a processing chamber 4 by a dielectric wall 2. Therefore, the dielectric body wall 2 constitutes the patio wall of the processing chamber 4. The dielectric body wall 2 is made of ceramic such as Al2〇3 or quartz. Φ A shower frame 11 for supplying a processing gas is embedded in a lower portion of the dielectric body wall 2. The shower frame 11 is formed in a cross shape and has a structure in which the dielectric body wall 2 is supported from the lower side. Further, the shower frame 11 supporting the dielectric body wall 2 is suspended from the ceiling of the main body container 1 by a plurality of hangers (not shown). The shower frame 11 is made of a conductive material, preferably a metal, for example, by applying anodized aluminum to the inner surface thereof without generating contaminants. The shower housing 11 is formed with a gas passage 12 extending in a horizontal direction, and a plurality of gas discharge holes -9 - 201008400 12a extending downward are continuous in the gas passage 12 . Further, a gas supply pipe 20a is provided at the center of the upper surface of the dielectric body wall so as to communicate with the gas flow path 12. The gas supply pipe 20a penetrates from the ceiling of the main body container 1 to the outside thereof, and is connected to the process gas supply system 20 including the processing gas supply source, the valve system, and the like. Therefore, in the plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied into the shower housing 11 through the gas supply pipe 20a, and is discharged into the processing chamber 4 from the gas supply hole 12a on the lower side. . Between the side wall 3a of the antenna chamber 3 in the main body container 1 and the side wall 4a of the processing chamber 4, a support frame 5 projecting from the inner side is provided, and the dielectric body wall 2 is placed on the support frame 5. In the antenna chamber 3, a high frequency (RF) antenna 13 is disposed on the dielectric wall 2 so as to face the dielectric wall 2. The high-frequency antenna 13 is spaced apart from the dielectric wall 2 by a spacer 17 made of an insulating member. Fig. 2 is a plan view schematically showing the radio-frequency antenna 13. As shown in the figure, the high-frequency antenna 13 is configured such that the outer antenna portion 13a, the inner antenna portion 13b, and the intermediate antenna portion 13c are arranged concentrically, and the outer antenna portion 13a is closely arranged with the antenna line at the outer portion. In this configuration, the inner antenna portion 13b is configured by closely arranging antenna wires on the inner portion, and the intermediate antenna portion is configured by closely arranging the antenna wires in the intermediate portions. The outer antenna portion 13a, the inner antenna portion 13b, and the intermediate antenna portion 13c constitute a multilayer antenna in which a plurality of antenna lines are formed in a spiral shape. In the outer antenna portion 13a, the four antenna lines are each shifted by 90°, and are arranged in a substantially rectangular shape as a whole, and a central portion thereof becomes a space. Furthermore, power is supplied to each antenna line via 4 201008400 terminals 22a. Further, the outer end portions of the respective antennas are connected to the side walls of the antenna room 3 via the capacitor 18a to be grounded by changing the voltage distribution of the antenna lines. However, it is also possible to directly ground without the capacitor 18a, and even if the capacitor is inserted into, for example, the bent portion 100a, even in the portion of the terminal 22a or the antenna line. Further, the inner antenna portion 13b is disposed such that the four antenna lines are shifted by 90° in the space in the central portion of the outer antenna portion 13a, and the whole is formed into a slightly φ shape. Further, power is supplied to each antenna line via the four terminals 22b of the center. Further, in order to change the voltage distribution of the antenna line, the outer end of each antenna is connected to the upper wall of the antenna room 3 via the capacitor 18b to be grounded (see Fig. 1). However, it is also possible to directly ground without the capacitor 18b, and even if the capacitor is inserted into, for example, the curved portion 100b, even in the portion of the terminal 22b or the antenna wire. Further, a large space is formed between the outermost antenna of the inner antenna portion 13b and the innermost antenna of the outer antenna portion 13a, and the intermediate antenna portion 13C is disposed in the space. In the outer antenna portion 13c, the four antenna lines are each shifted by 90°, and are arranged in a substantially rectangular shape as a whole, and the central portion thereof becomes a space. Furthermore, power is supplied to each antenna line via the four terminals 22c. Further, in order to change the voltage distribution of the antenna line, the outer end of each antenna is connected to the upper wall of the antenna room 3 via the capacitor 18c to be grounded (see the figure). However, it is also possible to directly ground the battery without the capacitor 18c, and even if the capacitor is inserted into, for example, the bent portion 100c, even in the portion of the terminal 2 2c or the antenna line. Between the outer antenna portion 13a, the inner antenna portion 13b, and the intermediate portion -11 - 201008400 line portion 13c, a specific gap wider than the distance between the antennas of the respective antenna portions is formed. The outer antenna portion 13a, the inner antenna portion 13b, and the intermediate antenna portion 13c are arranged in the arrangement regions, and the arrangement pattern is set such that the electric field intensity is uniform in the arrangement regions. Specifically, in the central portion of each of the rectangular sides of the constituents, the number of windings is smaller than the other portions. Further, the outer antenna portion 13a, the inner antenna portion 13b, and the intermediate antenna portion 13c are arranged in the arrangement regions, and the number of turns is set so that the electric field intensity can be made uniform between the arrangement regions. Specifically, when the antenna wire is arranged in a spiral shape, the length of the antenna wire is increased as the length of the antenna wire is increased to the outside, and the number of the antenna portion is reduced from the antenna portion toward the outside. In the center portion of each side, for example, the inner antenna 13b is four coils, the intermediate antenna portion 13c is three coils, and the outer antenna portion 13a is two coils. In the vicinity of the central portion of the antenna room 3, four first power feeding members 16a that supply power to the outer antenna portion 13a, four second power feeding members 16b that supply power to the inner antenna portion 13b, and four power supplies that are supplied to the intermediate antenna 13c are provided. 3 power supply members 16c (only one of them is shown in Fig. 1), the lower end of each of the first power feeding members 16a is connected to the terminal 22a of the outer antenna portion 13a, and the lower end of each of the second power feeding members 16b is The terminal 22b connected to the inner antenna portion 13b is connected to the lower end of each of the third power feeding members 16c to the terminal 22c of the intermediate antenna portion 13c. The first power feeding member 16a, the second power feeding member 16b, and the third power feeding member 16c are connected in parallel to the high frequency power source 15 via the integrator 14. The high-frequency power source 15 and the integrator 14 are connected to the power supply line 19, and the power supply line 19 is branched on the downstream side of the integrator 14 into power supply lines 19a, 19b and 19c -12- 201008400, and the power supply line 19a is connected to the fourth one. 1 The power supply member 16a, the power supply line 19b is connected to the four second power supply members 16b, and the power supply line 19c is connected to the four third power supply members 16c. A variable capacitor 21a is disposed in the middle of the power supply line 19a, a variable capacitor 21c is disposed in the middle of the power supply line 19c, and a variable capacitor is not disposed between the power supply lines 19b. Then, the outer antenna circuit is constituted by the variable capacitor 21a and the outer antenna portion 13a, and the intermediate antenna circuit is constituted by the variable capacitor 21c and the intermediate antenna portion 13c. Further, the inner antenna circuit is constituted only by the inner antenna portion 13b. As will be described later, the impedance of the outer antenna circuit is controlled by adjusting the capacitance of the variable capacitor 21a, and the impedance of the intermediate antenna circuit is controlled by adjusting the capacitance of the variable capacitor 21c. With these controls, the flow can be adjusted to the outer antenna. The magnitude relationship of the current of the circuit, the inner antenna circuit, and the intermediate antenna circuit. In the plasma processing, the high-frequency power source 15 supplies a high-frequency power of, for example, a frequency of 13.56 MHz to the high-frequency antenna 13 for the formation of the electric field, so that the high-frequency antenna 13 is supplied with the high-frequency power. An induced electric field is formed in the processing chamber 4, and the processing gas supplied from the shower frame 11 is plasmad by the induced electric field. The plasma density distribution at this time is controlled by controlling the impedances of the outer antenna portion 13a, the inner antenna portion 13b, and the intermediate antenna portion 13c in accordance with the variable capacitors 21a, 21b. Below the inside of the processing chamber 4, a mounting table 23 for mounting the LCD glass substrate G is disposed so as to face the high frequency antenna 13 with the dielectric wall 2 interposed therebetween. The mounting table 23 is made of a conductive material such as aluminum whose surface is anodized -13 - 201008400. The LCD glass substrate G placed on the mounting table 23 is adsorbed and held by an electrostatic chuck (not shown). The mounting table 23 is housed in the insulator frame 24 and supported by the hollow pillars 25. The support column 25 supports the bottom of the main body container 1 in an airtight state, and is supported by an elevating mechanism (not shown) disposed outside the main body container 1. When the substrate G is loaded and unloaded, the mounting table 23 is moved by the elevating mechanism. Driven in the up and down direction. Further, between the insulator frame 24 accommodating the mounting table 23 and the bottom of the main body container 1, a bellows 26 that hermetically surrounds the stay 25q is disposed, and thus the processing container is secured even by the upper and lower movement of the mounting table 23. 4 air tightness. Further, in the side wall 4a of the processing container 4, a loading/unloading port 27a for loading and unloading the substrate G, and a gate valve 27 for opening and closing are provided. The high frequency power supply 29 is connected to the mounting table 23 via the power supply line 25a provided in the hollow post 25. The high-frequency power source 29 is a high-frequency power for biasing the mounting table 23 during plasma processing, for example, high-frequency power having a frequency of 3.2 MHz. The ions generated in the plasma in the processing chamber 4 are efficiently introduced into the substrate G by the high frequency power 偏压 for the bias voltage. Further, a temperature control mechanism for controlling the temperature of the substrate G, a heating means such as a ceramic heater or a refrigerant flow path, and a temperature sensor (any of which has no pattern) is provided in the mounting table 23. Any of the piping or wiring of the mechanisms or members is led out of the body container 1 through the hollow struts 25. At the bottom of the processing chamber 4, a venting device 30 including a vacuum pump-14-201008400 is connected via an exhaust pipe 31, and the exhaust processing chamber 4' is in the plasma processing, in the processing chamber 4 It is set and maintained in a specific vacuum atmosphere (for example, 1. 3 3 P a ). A cooling space (not shown) is formed on the back side of the substrate G placed on the mounting table 23, and a He gas flow path 41 for supplying He gas as a heat transfer gas having a constant pressure is provided. In this way, by supplying the heat transfer gas to the back side of the substrate G, it is possible to return to the temperature rise or temperature change of the substrate G under vacuum. Each component of the plasma processing apparatus is configured to be connected to a control unit 50 composed of a computer. Further, the control unit 50 is connected to a user interface including a keyboard for performing an input operation of an operator to manage the plasma processing device, or a display for visualizing the operation state of the plasma processing device. 51. Further, a memory unit 52 is connected to the processing unit 5, and the memory unit stores a control program for realizing various processes performed by the plasma processing apparatus by the control of the process unit 50, or plasma processing according to processing conditions. The program that performs processing in each component of the device is a processing program. The processing program is memorized in the memory medium in the storage unit 52. The memory medium can be fixed even if it is a hard disk, even if it is a portable one such as a CD-ROM or a DVD. Furthermore, even if the processing program is properly transmitted from another device via, for example, a dedicated line. Then, if necessary, the self-reporting unit 52 calls an arbitrary processing program from the user interface 51, and causes the control unit 50 to execute. Accordingly, the plasma processing apparatus is executed under the control of the controller 50. I want to deal with it. Next, the impedance control of the high frequency antenna 13 will be described. 3-15-201008400 The figure shows a diagram of a power supply circuit of the high frequency antenna 13. As shown in the figure, the high-frequency power from the high-frequency power source 15 is supplied to the outer antenna circuit 61a, the inner antenna circuit 61b, and the intermediate antenna circuit 61c via the integrator 14.
在此，外側天線電路61a係由外側天線部13a和可變電容 器2 1 a所構成，中間天線電路6 1 c由於係由中間天線電路 13c和可變電容器21c所構成，故可以藉由調節可變電容 器21a之位置變化其電容使外側天線電路61a之阻抗Zcut 變化，且可以藉由調節可變電容器21c之位置變化其電容 φ 使中間天線電路61c之阻抗ZmiddU變化。另外，內側天線 電路61b僅由內側天線部13b所構成，其阻抗Zin爲固定 。此時，外側天線電路61a之電流Uut可以對應於阻抗 Zout之變化而變化，中間天線電路61c之電流Imiddle可以 對應於阻抗Zmiddle之變化而變化。然後，內側天線電路 61b之電流Iin因應Zw和Zmiddle和Zin而變化。因此，藉 由可變電容器21a、21c之電容調節，使Zw及Z middle 變 化，可以使外側天線電路61a之電流I。"和內側天線電路 ❾ 61b之電流Iin和中間天線電路61c之電流Imid<ne自由變化 。然後，如此一來，藉由控制流入於外側天線部13a之電 流和流入於內側天線部13b之電流和流入中間天線部13c 之電流，可以控制電槳密度分布。 接著，使用如上述般所構成之感應耦合電漿處理裝置 ，對LCD玻璃基板G施予電漿灰化處理之時之處理動作 予以說明。 首先，在打開閘閥27之狀態下，自此藉由搬運機構 -16 - 201008400 (無圖式），將基板G搬入至處理室4內，並載置於載置 台23之載置面之後，藉由靜電夾具（無圖式），將基板 G固定於載置台23上。接著，從處理氣體供給系統20將 處理氣體自噴淋框體11之氣體吐出孔12a吐出至處理室4 內，並且藉由排氣裝置30經排氣管31使處理室4內予以 真空排氣，依此將處理室內維持至例如0.66〜26.6Pa左右 之壓力氛圍。 0 再者，此時在基板G之背面側之冷卻空間，爲了迴避 基板G之溫度上升或溫度變化，經He氣體流路41，供給 當作熱傳達用氣體之He氣體。 接著，自高頻電源15對高頻天線13施加例如13.56 MHz之高頻，藉此經介電體壁2在處理室4內形成介電體 。藉由如此所形成之感應電場，在處理室4內使處理氣體 電漿化，生成高密度之感應耦合電漿，藉由該電漿進行例 如電漿灰化處理。 ❷ 此時，高頻天線13之構造係如上述般，具有在外側 部分將天線線緊密配置而構成之外側天線部13a，和在內 側部分將天線線緊密配置而構成之內側天線部13b，和在 該些之間緊密配置而構成之中間天線13c，故即使玻璃基 板G之尺寸爲1邊超過lm的大型基板之時，在各天線部 之間亦難產生因電漿密度下降而導致的電漿不均勻。即是 ，上述專利文獻1所記載之僅以外側天線部和內側天線部 構成高頻天線13之時’當直接擴大高頻天線13’以使對 應於1邊超過lm之玻璃基板G時，由於要求保持電漿密 -17- 201008400 度，不使介電體壁2和載置台23之間隙變化，故外側天 線部和內側天線部之間隔變寬之部分，使得因爲電漿擴散 而導致均勻化效果下降，容易反映天線圖案之密、疏分布 ，電漿密度之分布惡化，但是若如本實施型態般，在外側 天線部1 3 a和內側天線部1 3 b之間，設置中間天線部1 3 c ，如此一來可以迴避該情形。 再者，外側天線13a、內側天線部13b、中間天線部 13c均勻配置天線之時，雖然在該些配置區域中電場強度 成爲不均勻，再者，在各天線部之配置區域間電場強度不 均勻，但是在本實施型態中，因採用使因該些情形所引起 之電場強度之不均勻極力不產生的配置型態，故難以產生 電場強度不均勻以及電漿不均勻。 具體而言，矩形狀之外側天線部13a、內側天線部 13b、中間天線部13c，雖然在其各邊之中央部具有電場強 度變高之傾向，但是因在其部分之捲數比其他部分少，故 在天線部之配置區域，可以使電場強度均勻。再者，當構 成渦旋狀之天線時，雖然隨著往外側移動天線線之長度變 長’電場強度變大’但是因以從內側之天線部朝向外側之 天線部捲數減少之方式，更具體而言，在各邊之中央部中 ，內側天線13b成爲4捲，中間天線部13c成爲3捲，外 側天線部13a成爲2捲之方式，配置外側天線部13a、內 側天線部13b、中間天線部13c，故可使各天線部之配置 區域間的電場強度均勻化。 再者’高頻天線13係於外側天線部13a連接可變電 18· 201008400 容器21a，使能夠進行外側天線電路61a之阻抗調整，並 於中間天線部13連接可變電容器21c，使能夠進行中間天 線電路61c之阻抗調節，故可以使外側天線電路61之電 流I〇ut和內側天線電路61b之電流1^和中間天線電路61c 之電流Imiddle自由變化。即是，可以藉由調節可變電容器 2 1 a、2 1 C之位置，控制流入外側天線部1 3 a之電流，和流 入於內側天線部13b之電流和流入中間天線部13c之電流 。感應耦合電漿雖然係在高頻天線13之正下方之空間生 成電漿，但是此時之各位置之電漿密度因與在各位置之電 場強度呈比例，故藉由控制流入於外側天線部1 3 a之電流 和流入於內側天線部1 3 b之電流和流入中間天線部1 3 c之 電流，可以控制~電漿密度分布。 此時，每次運用把握最適合之電漿密度分布，藉由將 事先所取得之其電漿密度分布的可變電容器21a、21c之 位置設定於記憶部52，能夠藉由控制部50選擇每次運用 Ο 最適合的可變電容器21a、21c之位置而可執行電漿處理 〇 如此一來，藉由可變電容器21a、21c的阻抗控制， 因可以控制電漿密度分布，故不需要交換天線，不需要更 換天線的勞力或對每次用運準備天線的成本。再者，可以 藉由可變電容器21之位置調節執行極細的電流控制，能 夠控制成因應運用取得最適合之電漿密度分布。 並且，本發明並不限定於上述實施型態，可作各種變 形。例如，在上述實施型態中，雖然針對設置有3個天線 -19- 201008400 部之時予以表示，但並不限定於此，即使對應於基板之大 小，設置4個以上之天線部亦可。於設置4個天線部之時 ，可以如第4圖所示構成。即是’在第2圖之外側天線部 13a之更外側，可以設爲設置有最外側天線部13d之構成 。在該例中，最外側天線部13d係以使4個天線線各偏移 90°而配置成全體成爲略矩形狀’並且邊的中央部成爲1 層。然後，成爲經4個端子22d而被供電至最外側天線部 13d之各天線，該些之外端部經電容器18d而被接地。並 _ 且，電容器18d並非需要。此時之高頻天線13之供電電 路如第5圖所示般，在第3圖之供電電路，附加由最外側 天線部13d和可變電容器21d所構成之最外側天線電路 61d。可以藉由調節可變電容器21d之位置使變化其電容 而使最外側天線電路61d之阻抗Zoutuwst變化，並且可以 對應於阻抗Z^term。"之變化而使最外側天線電路61D之 電流loutermDst變化。 再者，在上述實施型態中，雖然舉出在內側天線部 參 13b之邊的中央部爲4捲，在中間天線i3c之邊的中央部 爲3捲’在外側天線部13a之邊的中央部爲2捲之例，但 是並不限定於如此之構成。 並且’在上述實施型態中，雖然舉出將可變電容器連 接於外側天線部13a和中間天線部i3c之例，但是並不限 定於此’若對外側天線部13a、中間天線部13c、內側天 線部13b中之任兩個設置時，亦可以取得相同功能，且於 限於欲調整之區域之時，即使對任一個設置亦可。 -20- 201008400 又，雖然在上述實施型態中爲了調整阻抗設置有可變 電容器，但是即使爲可變線圈等之其他阻抗調整手段亦可 〇 再者，雖然針對本發明適用於灰化裝置之時予以表示 ，但是並不限於灰化裝置，亦可以適用於鈾刻或CVD成 膜等之其他電漿處理裝置。再者，雖然使用FPD基板以當 作被處理體，但是本發明並不限定於此，亦可以適用於處 Φ 理半導體晶圓等之其他基板之時。 【圖式簡單說明】 第1圖爲表示本發明之一實施型態所涉及之感應耦合 電漿處理裝置之剖面圖。 第2圖爲表示第1圖之感應耦合電漿處理裝置所使用 之商頻天線之俯視圖。 第3圖爲表示第1圖之感應耦合電漿處理裝置所使用 ® 之高頻天線之供電電路的圖式。 第4圖爲表示高頻天線之其他例的俯視圖。 第5圖爲表示第4圖之高頻天線之供電電路的圖式。 【主要元件符號說明】 1 :本體容器 2:介電體壁（介電體構件） 3 :天線室 4 :處理室 -21 - 201008400 1 3 :高頻天線 1 3 a :外側天線部 1 3 b :內側天線部 13c :中間天線部 14 :整合器 1 5 :高頻電源 16a、16b、16c:供電構件 20:處理氣體供給系統 21a、21c:可變電容器 23 :載置台 30 :排氣裝置 5 0 :控制部 5 1 :使用者介面 52 :記憶部 6 1 a :外側天線電路 6 1 b :內側天線電路 6 1 c :中間天線電路 G :基板 -22Here, the outer antenna circuit 61a is composed of the outer antenna portion 13a and the variable capacitor 2 1 a, and the intermediate antenna circuit 6 1 c is composed of the intermediate antenna circuit 13c and the variable capacitor 21c, so that it can be adjusted by The position of the variable capacitor 21a changes its capacitance so that the impedance Zcut of the outer antenna circuit 61a changes, and the impedance ZmiddU of the intermediate antenna circuit 61c can be changed by adjusting the capacitance φ of the position of the variable capacitor 21c. Further, the inner antenna circuit 61b is composed only of the inner antenna portion 13b, and its impedance Zin is fixed. At this time, the current Uut of the outer antenna circuit 61a can be changed corresponding to the change of the impedance Zout, and the current Imiddle of the intermediate antenna circuit 61c can be changed corresponding to the change of the impedance Zmiddle. Then, the current Iin of the inner antenna circuit 61b changes in accordance with Zw and Zmiddle and Zin. Therefore, by adjusting the capacitance of the variable capacitors 21a, 21c, Zw and Z Middle are changed, and the current I of the outer antenna circuit 61a can be made. " and the current Iin of the inner antenna circuit ❾61b and the current Imid<ne of the intermediate antenna circuit 61c are freely changed. Then, by controlling the current flowing into the outer antenna portion 13a and the current flowing into the inner antenna portion 13b and the current flowing into the intermediate antenna portion 13c, the electric blade density distribution can be controlled. Next, the processing operation at the time of applying the plasma ashing treatment to the LCD glass substrate G will be described using the inductively coupled plasma processing apparatus constructed as described above. First, in a state where the gate valve 27 is opened, the substrate G is carried into the processing chamber 4 by the transport mechanism-16 - 201008400 (not shown), and is placed on the mounting surface of the mounting table 23, The substrate G is fixed to the mounting table 23 by an electrostatic chuck (not shown). Next, the processing gas is discharged from the gas discharge hole 12a of the shower housing 11 into the processing chamber 4 from the processing gas supply system 20, and the inside of the processing chamber 4 is evacuated by the exhaust unit 30 through the exhaust pipe 31. According to this, the treatment chamber is maintained to a pressure atmosphere of, for example, about 0.66 to 26.6 Pa. In this case, in the cooling space on the back side of the substrate G, in order to avoid temperature rise or temperature change of the substrate G, He gas as a heat transfer gas is supplied through the He gas flow path 41. Next, a high frequency of, for example, 13.56 MHz is applied from the high frequency power source 15 to the high frequency antenna 13, whereby a dielectric body is formed in the processing chamber 4 via the dielectric body wall 2. By the induced electric field thus formed, the processing gas is plasma-formed in the processing chamber 4 to form a high-density inductively coupled plasma, which is subjected to, for example, plasma ashing treatment. In this case, the structure of the high-frequency antenna 13 has the outer antenna portion 13a formed by closely arranging the antenna wires in the outer portion, and the inner antenna portion 13b configured by closely arranging the antenna wires in the inner portion, and In the intermediate antenna 13c which is closely arranged between the two, even when the size of the glass substrate G is a large substrate having one side exceeding lm, it is difficult to generate electricity due to a decrease in plasma density between the antenna portions. The pulp is not uniform. In other words, when the high-frequency antenna 13 is configured by the outer antenna portion and the inner antenna portion, the direct-expansion of the high-frequency antenna 13' so as to correspond to the glass substrate G having one side exceeding lm is described in the above Patent Document 1. It is required to maintain the plasma density -17-201008400 degrees, and the gap between the dielectric body wall 2 and the mounting table 23 is not changed, so that the interval between the outer antenna portion and the inner antenna portion is widened, so that the plasma is diffused to cause homogenization. The effect is lowered, and it is easy to reflect the dense and sparse distribution of the antenna pattern, and the distribution of the plasma density is deteriorated. However, as in the present embodiment, the intermediate antenna portion is provided between the outer antenna portion 13a and the inner antenna portion 13b. 1 3 c , so you can avoid this situation. Further, when the antenna is uniformly disposed in the outer antenna 13a, the inner antenna portion 13b, and the intermediate antenna portion 13c, the electric field strength is uneven in the arrangement regions, and the electric field intensity is uneven between the arrangement regions of the antenna portions. However, in the present embodiment, it is difficult to generate electric field strength unevenness and plasma unevenness by adopting an arrangement type in which the unevenness of the electric field strength caused by these cases does not occur. Specifically, the rectangular outer antenna portion 13a, the inner antenna portion 13b, and the intermediate antenna portion 13c tend to have an electric field strength at the center portion of each of the sides, but the number of windings in the portion is smaller than other portions. Therefore, the electric field intensity can be made uniform in the arrangement area of the antenna portion. In addition, when the length of the antenna line is increased as the length of the antenna line is increased, the electric field strength is increased, but the number of the antenna portions from the inner antenna portion toward the outer side is reduced. Specifically, in the central portion of each side, the inner antenna 13b is four coils, the intermediate antenna portion 13c is three coils, and the outer antenna portion 13a is two coils, and the outer antenna portion 13a, the inner antenna portion 13b, and the intermediate antenna are disposed. Since the portion 13c is formed, the electric field intensity between the arrangement regions of the antenna portions can be made uniform. Further, the 'high-frequency antenna 13 is connected to the outer antenna portion 13a to connect the variable electric 18·201008400 container 21a, so that the impedance adjustment of the outer antenna circuit 61a can be performed, and the variable capacitor 21c is connected to the intermediate antenna unit 13, so that the middle portion can be connected. Since the impedance of the antenna circuit 61c is adjusted, the current I〇ut of the outer antenna circuit 61 and the current I^ of the inner antenna circuit 61b and the current Imiddle of the intermediate antenna circuit 61c can be freely changed. That is, the current flowing into the outer antenna portion 13a, and the current flowing into the inner antenna portion 13b and the current flowing into the intermediate antenna portion 13c can be controlled by adjusting the positions of the variable capacitors 2 1 a and 2 1 C. Although the inductively coupled plasma generates plasma in the space directly under the high frequency antenna 13, the plasma density at each position at this time is proportional to the electric field strength at each position, so that it flows into the outer antenna portion by control. The current of 1 3 a and the current flowing into the inner antenna portion 13 b and the current flowing into the intermediate antenna portion 13 c can control the plasma density distribution. At this time, by using the most suitable plasma density distribution, the position of the variable capacitors 21a and 21c whose plasma density distribution is obtained in advance is set in the memory unit 52, so that the control unit 50 can select each The plasma treatment can be performed by using the position of the most suitable variable capacitors 21a, 21c. Thus, by controlling the impedance of the variable capacitors 21a, 21c, since the plasma density distribution can be controlled, there is no need to exchange antennas. There is no need to change the labor of the antenna or the cost of preparing the antenna for each use. Further, it is possible to perform extremely fine current control by the position adjustment of the variable capacitor 21, and it is possible to control the optimum plasma density distribution to be applied. Further, the present invention is not limited to the above embodiment, and various modifications are possible. For example, in the above-described embodiment, although three antennas -19-201008400 are provided, the present invention is not limited thereto, and four or more antenna portions may be provided depending on the size of the substrate. When four antenna sections are provided, they can be constructed as shown in Fig. 4. In other words, the outermost antenna portion 13d is provided on the outer side of the outer antenna portion 13a of Fig. 2, and the outermost antenna portion 13d may be provided. In this example, the outermost antenna portion 13d is arranged such that all four antenna lines are shifted by 90°, and are arranged in a substantially rectangular shape as a whole, and the central portion of the side is formed into one layer. Then, the antennas are supplied to the outermost antenna portion 13d via the four terminals 22d, and the outer ends are grounded via the capacitor 18d. And _ and, capacitor 18d is not required. In the power supply circuit of the radio-frequency antenna 13 at this time, as shown in Fig. 5, the outermost antenna circuit 61d composed of the outermost antenna portion 13d and the variable capacitor 21d is added to the power supply circuit of Fig. 3. The impedance Zoutuwst of the outermost antenna circuit 61d can be varied by adjusting the position of the variable capacitor 21d so as to change its capacitance, and can correspond to the impedance Z^term. The change of " causes the current loutermDst of the outermost antenna circuit 61D to change. Further, in the above-described embodiment, the center portion of the side of the inner antenna portion 13b is four rolls, and the center portion of the side of the intermediate antenna i3c is three rolls "the center of the side of the outer antenna portion 13a". The department is an example of two volumes, but is not limited to such a configuration. Further, in the above embodiment, the variable capacitor is connected to the outer antenna portion 13a and the intermediate antenna portion i3c. However, the present invention is not limited to the case of the outer antenna portion 13a, the intermediate antenna portion 13c, and the inner side. When any two of the antenna sections 13b are provided, the same function can be obtained, and even if it is limited to the area to be adjusted, it may be set to any one. -20- 201008400 Further, in the above embodiment, a variable capacitor is provided for adjusting the impedance, but other impedance adjusting means such as a variable coil may be used, and the present invention is applied to an ashing apparatus. In the case of the ashing apparatus, it is not limited to the ashing apparatus, and may be applied to other plasma processing apparatuses such as uranium engraving or CVD film formation. Further, although the FPD substrate is used as the object to be processed, the present invention is not limited thereto, and may be applied to the case of arranging other substrates such as semiconductor wafers. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention. Fig. 2 is a plan view showing a commercial frequency antenna used in the inductively coupled plasma processing apparatus of Fig. 1. Fig. 3 is a view showing a power supply circuit of a high frequency antenna used in the inductively coupled plasma processing apparatus of Fig. 1. Fig. 4 is a plan view showing another example of the radio-frequency antenna. Fig. 5 is a view showing a power supply circuit of the high frequency antenna of Fig. 4. [Main component symbol description] 1 : Main body container 2: Dielectric body wall (dielectric member) 3 : Antenna chamber 4 : Processing chamber - 21 - 201008400 1 3 : High frequency antenna 1 3 a : External antenna portion 1 3 b : Inside antenna portion 13 c : Intermediate antenna portion 14 : Integrator 1 5 : High-frequency power sources 16 a , 16 b , 16 c : Power supply member 20 : Process gas supply systems 21 a and 21 c : Variable capacitor 23 : Mounting table 30 : Exhaust device 5 0: Control unit 5 1 : User interface 52 : Memory unit 6 1 a : Outer antenna circuit 6 1 b : Inside antenna circuit 6 1 c : Intermediate antenna circuit G : Substrate-22