201006369 九、發明說明： . 【發明所屬之技術領域】 本發明涉及一種散熱結構及其製備方法，尤其涉及一 種基於奈米碳管的散熱結構及其製備方法。 【先前技術】 近年來’隨著半導體器件集成工藝的快速發展，半導 體器件的集成化程度越來越高，半導體集成器件（如⑽） 的運行頻率也越來越高，其單位時間内產生的熱量增加， ⑩熱量的累積將引起溫度的升高，從而導致半導體集成器件 的運行性能包括穩定性下降，故，必需及時地將其產生的 熱量散發出去，目前，散熱已經成為半導體集成工藝中必 須解決的問題。 隨著器件體積的減小，其對散熱需求的提高，器件散 f已成為—個重要㈣題。請參見圖1，目前應用於器件散 ^的散熱結構_通常包括一散熱器舰和一熱介面材料層 遍。該散熱器102包括一基體1〇6和設置於該基體崎面 ，散。$熱介面材料層1G4通常設置於散熱器 ，士 基體106與散熱韓片108相對的表面上，用於增加散熱 '00與半導體器件之間的散熱面積，改善半導體器件與 =:…構_的熱傳遞效果。傳統熱介面材料為將導熱係數 齡=顆粒分散於聚合物基體巾形成的複合材料，導熱係 ==料包括石墨、氮化硼、氧化石夕、氧化銘、銀或 2^ ^等。5亥類複合材料的普遍缺陷係整體材質導熱係 r 型值為1W/mK，這已經不能適應半導體集成化 又、间對政熱的需求。且，由熱介面材料層的存在， 201006369 -=這種散熱結構的體積受到限制，很難滿足微小半導體 的需求。另’傳統的散熱鰭片的材料常採用金屬、金 =或導熱係數較高的的顆粒分散於聚合物基體中形成 ==料’這些材料製備的散熱轉片同樣存在著導熱係 的ΐ求。、缺點’難以滿足半導體集成化程度的提高對散熱 太年’日本科學家1ijima在電狐放電試驗中發現了 、卡碳管（請參見“Helical micr〇tubules 〇f啊驗 Γ/二，Na㈣，Sumi〇Iijima，v〇1 354, p56(1991))。因奈 為鋼的_倍，但重量只有鋼度高’ 管沿其縱向方向有極高的熱導係數， ，其^最具潛力的熱介面材料之―。美國物理 ΐ—/名為“奈来碳管顯著熱導性，，的文章指出對於“z ” 子形（10，10)奈米碳管在室溫立 ' —奈米碳管的這一性質二;==二： =構中的㈣具有廣闊的發展前景體集成 米碳管應用於散熱結構中時，通常 應用「:，Γ於太二二=管的複合㈣ 用…自於奈未石反管在熱介面材料令一般 :能充分利用奈米碳管縱向導熱的優勢，故，这種 效率並未得到明顯提高。同時，由於這種二： ==同:包括熱介面材料與散熱器，散二； 積文到限制，無法滿足微小器件的要求。 稱的體 201006369 - 有鑒於此，提供一種散熱效率高，體積小，可方便 •應用於各種領域的散熱結構及其製備方法實為必要。 【發明内容】 一種散熱結構，該散熱結構固定設置於一發熱元件 表面，其中，該散熱結構包括一圖形化的奈米碳管陣列 與一固定層，該散熱結構通過該固定層固定於該發熱元 件上。 一種散熱結構的製備方法，其包括以下步驟：提供 參-發熱7L件，該發熱元件具有一表面；設置一溶融態固 定層於發熱元件的表面；製備一奈米碳管陣列形成於一 基底，該奈米碳管陣列具有一第一端及與第一端相對的 第一端，第二端與基底連接；將上述奈米碳管陣列的第 二端插入該固定層中，冷卻該固定層至其凝固；除去奈 米碳管陣列的基底；以及將奈米碳管陣列圖形化，於發 熱冗件的表面上形成一散熱結構。 與切技術相比較，本技術方案所提供的散熱結構 ©子u下優點：纟—，該散熱結構直接固定於發熱元件 h無需熱介面材料’體積較小，可方便應用於各種領 域，其二，該散熱結構中的奈米碳管以陣 充分利用了奈米碳管的縱*墓埶降处执 厌&的縱向導熱性旎，故，該散熱結構 的散熱效率高。 【實施方式】[Technical Field] The present invention relates to a heat dissipation structure and a preparation method thereof, and more particularly to a heat dissipation structure based on a carbon nanotube and a preparation method thereof. [Prior Art] In recent years, with the rapid development of semiconductor device integration processes, the degree of integration of semiconductor devices is getting higher and higher, and the operating frequency of semiconductor integrated devices (such as (10)) is getting higher and higher, which is generated in unit time. The increase of heat, the accumulation of 10 heat will cause the temperature to rise, resulting in the running performance of the semiconductor integrated device including the stability degradation, so it is necessary to timely dissipate the heat generated by it. At present, heat dissipation has become a must in the semiconductor integration process. solved problem. As the volume of the device decreases, its demand for heat dissipation increases, and device dispersion has become an important (four) problem. Referring to Figure 1, the heat dissipation structure currently applied to the device _ usually includes a radiator ship and a layer of thermal interface material. The heat sink 102 includes a substrate 1〇6 and is disposed on the base surface of the substrate. The thermal interface material layer 1G4 is usually disposed on the surface of the heat sink, and the heat dissipation surface between the semiconductor substrate 106 and the heat dissipation film 108 is used to increase the heat dissipation area between the heat sink '00 and the semiconductor device, and improve the semiconductor device and the structure of the semiconductor device. Heat transfer effect. The conventional thermal interface material is a composite material formed by dispersing thermal conductivity age = particles in a polymer matrix towel, and the thermal conductivity system = graphite, boron nitride, oxidized stone, oxidized, silver or 2^^. The general defect of the 5-type composite material is that the thermal conductivity of the whole material is rW value of 1W/mK, which cannot meet the needs of semiconductor integration and inter-government heat. Moreover, the presence of a layer of thermal interface material, 201006369 - = the size of this heat dissipation structure is limited, it is difficult to meet the needs of tiny semiconductors. Another 'conventional fin fin material often uses metal, gold = or higher thermal conductivity particles dispersed in the polymer matrix to form == material'. The heat-dissipating fins made of these materials also have the requirement of a heat-conducting system. , the shortcomings 'difficult to meet the degree of semiconductor integration to heat the year of the year' Japanese scientist 1ijima found in the electric fox discharge test, carbon tube (see "Helical micr〇tubules 〇f ah / ,, Na (four), Sumi 〇Iijima, v〇1 354, p56 (1991)). Inna is _ times the steel, but the weight is only high steel. The tube has a very high thermal conductivity along its longitudinal direction, and its most potential heat Interface material - "American physics ΐ - / "Nile carbon tube significant thermal conductivity,, the article pointed out that for the "z" sub-shaped (10,10) carbon nanotubes at room temperature 'n-carbon This property of the tube is two; == two: = (4) has a broad development prospect. When the integrated carbon nanotubes are used in the heat dissipation structure, the application is usually: ": Γ 太 太 二 二 = tube composite (4) with... Since the Neiwu stone is in the hot interface material, it can generally make full use of the advantages of the longitudinal heat conduction of the carbon nanotubes. Therefore, this efficiency has not been significantly improved. At the same time, because of this two: == same: including the thermal interface Materials and heat sinks, scattered two; accumulated text to limit, can not meet the requirements of small devices. Weighing body 201006369 - In view of this, it is necessary to provide a heat dissipating structure with high heat dissipation efficiency, small volume, and convenience. It is necessary to apply to various fields of heat dissipating structures and preparation methods thereof. [Disclosed] A heat dissipating structure is fixedly disposed on a heat generating component surface, wherein the heat dissipating structure comprises a patterned carbon nanotube array and a fixed layer, the heat dissipating structure is fixed on the heating element through the fixing layer. A method for preparing a heat dissipating structure, comprising the following steps Providing a heat-generating 7L member having a surface; providing a molten state fixed layer on the surface of the heat generating component; preparing a carbon nanotube array formed on a substrate, the carbon nanotube array having a first end And a first end opposite to the first end, the second end is connected to the substrate; inserting the second end of the carbon nanotube array into the fixed layer, cooling the fixed layer to solidify thereof; removing the carbon nanotube array a substrate; and patterning the carbon nanotube array to form a heat dissipation structure on the surface of the heat generating redundant member. Compared with the cutting technique, the technical solution is Heat dissipation structure provided by sub-u advantage: 纟-, the heat dissipation structure is directly fixed to the heating element h without the need of a thermal interface material 'small size, can be conveniently applied to various fields, and second, the carbon nanotube in the heat dissipation structure The heat dissipation efficiency of the heat dissipation structure is high in the longitudinal heat conductivity of the vertical tomb of the carbon nanotubes, and the heat dissipation efficiency of the heat dissipation structure is high.
下面將結合附圖及具體實施例對本發明作進一步 詳細說明。 / J μ參閲圖2，本技術方案提供-種散熱結構1G，該散熱 201006369 -結構10設置於一發熱元件12的表面18。該散熱結構1〇包括 ―一圖形化的奈米碳管陣列16與一固定層14。圖形化的奈米 碳管陣列16包括一第一端162及與第一端162相對的第:端 164。圖形化的奈米碳管陣列16的第一端162設置於固定層 14中，並通過固定層14使圖形化的奈米碳管陣列16固定於 發熱元件12的表面18，圖形化的奈米碳管陣列16的第二端 164向遠離固定層14的方向延伸。可理解，圖形化的奈米碳 管陣列16的第一端162也可穿透固定層14與發熱元ϋ直 ϋ接接觸，提高散熱效率。 所述固定層14的材料為導熱材料’包括複合材料或低 熔點的金屬。所述之複合材料包括導電聚合物複合材料、 導電陶瓷複合材料或其他導電複合材料，如含有奈米碳管 的塑膠。所述低溶點金屬包括錫、銦、鉛、銻、二了絲二 及其任意組合的合金或混合物，如錫鉛合金、銦錫合金、 錫銀合金等。所述固定層14的厚度不宜太厚，也不宜太薄， 太厚則不利於充分利用奈米碳管陣列16中的奈米碳管的散 ❹，性能，太薄則會降低其對圖形化的奈米碳管陣列16的固 定力，導致奈米碳管陣列16的傾倒。優選地，所述固定層 14的厚度為〇·1毫米-1毫米。 所述之圖形化的奈米碳管陣列16包括複數個平行設置 的奈米碳管’奈米碳管沿圖形化的奈米碳管陣列16的第一 端162到第二端164的方向延伸，奈米碳管基本垂直於固定 層14的表面18。由於圖形化的奈米碳管陣列16的第一端162 設置於固定層中，故，奈米碳管至少部分設置於固定層Μ 中，奈米碳管暴露於固定層14外的部分作為散熱鰭片7將 發熱兀件12所產生的熱量散發出去。所述之圖形化的奈米 201006369 -碳管陣列16可根據發熱元件12的需要形成預定的圖形，所 - 述之預定圖形的形成包括以下三種情況：其一，所述圖形 化的奈米碳管陣列16中暴露出固定層14的奈米碳管一部分 被去除’其餘的奈米碳管暴露出固定層14的部分的長度相 等’形成預定的平面圖形’如圓形、十字形、環形等；其 二，所述圖形化的奈米碳管陣列16中的暴露出固定層14的 奈米碳管長度不同’形成預定的立體圖形；其三，所述圖 形化的奈米碳管陣列16中一部分奈米碳管暴露出固定層14 ❹的部分被去除，其餘的奈米碳管暴露出固定層14的部分的 長度不相等，形成預定圖形。本實施利中，圖形化的奈米 石厌官陣列16中一部分奈米碳管暴露出固定層14的部分被去 除，其餘的奈米碳管暴露出固定層14的部分的長度相等， 形成如圖3所示的‘‘十，，字通道。在應用時，該圖形化的奈 米碳管陣列16可增加空氣對流，有利於提高散熱效率。所 述圖形化奈米碳管陣列16的中奈米碳管的長度大於固定層 14的厚度。優選地，圖形化的奈米碳管陣列16_奈米碳管 ❹的長度為0.5毫米-5毫米’本實施财，圖形化奈米碳管陣 列16中奈米碳管的長度為i毫米。所述圖形化的奈米碳管陣 列16中的奈米碳管為單壁奈米碳管、雙壁奈米碳管、多壁 奈米碳管或其任意組合。該單壁奈米碳管的直徑為〇5夺米 -100奈米，該雙壁奈米碳管的直徑為1〇奈米_1〇〇夺米該 多壁奈米碳管的直徑為1>5奈米·奈米。所述圖形化科 未礙官津列16中的奈米碳管之間的距離為〇1奈米$夺米。 所述發熱元件12的具體形狀不限，其具有一表面^可 用於設置固定層14即可，該表面18可為一平面，也可為凸 面、凹面或凸凹不平面。發熱元件12的表面18的溶點應高 11 201006369 .於固定層14的熔點，以確保該散熱結構10在形成於發熱元 件12上時不會對發熱元件造成破壞。發熱元件12可係任何 發熱元件，包括微型器件或大型器件，優選地，發熱元件 12為微型器件。 請參閱圖4及圖5 ’本技術方案實施例提供一種製備上 述散熱結構10的製備方法，其具體包括以下步驟： 步驟一、提供一發熱元件12，該發熱元件12具有一表 面18。 ❹ 所述發熱元件12的具體形狀不限，其具有一表面18可 用於設置固定層14即可。發熱元件12表面18的熔點應高於 固定層的熔點’以確保該散熱結構10在形成於發熱元件12 上時不會對發熱元件造成破壞。本實施例中，所述發熱元 件12為積體電路中所用的晶片。 步驟二、形成一熔融態的固定層14於發熱元件12的表 面18。 將熔融態的固定層材料通過塗敷、印刷等方式設置於 ❿發熱元件12的表面18上形成一固定層14 ，所述固定層14 的材料為導熱材料，其具體材料不限，可為低熔點的金屬。 所述低炫點金屬包括踢、銦、錯、銻、銀、絲以及前述各 2料的合金或混合物，如錫鉛合金、銦錫合金、錫銀銅合 金等，本實施例中，固定層材料優選為金屬錫。 兮太t驟山t、製備一奈米碳管陣列22形成於一基底20, 结』兴頁弟鳊及與第一端相對的第二 知’第二端與基底20連接。 =米碳管Μ 22的具體製備方法不限，本技術方 例中奈米碳管陣列的製備方法採用化學氣相沈積 12 201006369 •法，其具體包括以下步驟：（〇提供一平整基底20,該 、基底20可選自玻璃、石夕、二氧化石夕、金屬或金屬氧化物， 本技術方案實施例優選為採用二氧化矽基底；（b)在基 底20表面均勻形成一催化劑層，該催化劑層材料可選用 鐵⑻、録㈣、鎳（Ni)或其任意組合的合金之一； (^)將上述形成有催化劑層的基底2〇在7〇〇。〇⑽。C的 空氣中退火約30分鐘，分鐘；⑷將處理過的基底2〇 置於反應爐中’在保護氣體環境下加熱到5〇〇〇c _74〇。〇， ❹然後通入碳源氣體反應約5分鐘_3〇分鐘，生長得到夺米 碳管陣列。該奈米碳管陣列為複數個彼此平行且垂 ^ Ϊ 2〇生長的奈米碳管形成的奈米碳管陣列22。該奈米 ，吕陣列22包括-第-端及與第—端相對的第二端，第 二端與基底2G連接，固定於基底2()上，所述奈米碳管 在奈米碳管陣列22中從第一端向第二端延伸。 本技術方案實施例中碳源氣可選用乙炔、乙烯、甲烷 等化學性質較活潑的碳氫化合物，本技術方案實施例優 ❹選的麵氣為乙m纽體為氮氣㈣錢體，本技 術方案實施例優選的保護氣體為氬氣。 可理解’本技術方案實施例提供的奈米碳管陣列不限 2上述製備方法，也可為石墨電極恒流電弧放電沈積 法、鐳射蒸發沈積法等。 …步驟四、將上述奈米碳管陣列22的第一端插入該熔 融態的固定層14中，冷卻該固定層14至其凝固。 將奈求碳管陣列22的第—端倒轉後，缓慢插入溶融 L的固定層14中，奈米碳管陣列22插入固定層14令的 深度不限，可根據實際情況調整，奈米碳管陣列22可穿 13 201006369 透固定層14與發熱元件12的表面直接接觸。 為使奈米碳管陣列22順利插入固定層14中，在奈 米碳管陣列22插入固定層14之前，固定層14的應保持The invention will now be described in further detail with reference to the drawings and specific embodiments. Referring to FIG. 2, the present technical solution provides a heat dissipation structure 1G, which is disposed on the surface 18 of a heat generating component 12. The heat dissipation structure 1 includes a patterned carbon nanotube array 16 and a fixed layer 14. The patterned carbon nanotube array 16 includes a first end 162 and a first end 164 opposite the first end 162. A first end 162 of the patterned carbon nanotube array 16 is disposed in the pinned layer 14 and the patterned carbon nanotube array 16 is secured to the surface 18 of the heating element 12 by a pinned layer 14, patterned nano The second end 164 of the carbon tube array 16 extends away from the fixed layer 14. It can be understood that the first end 162 of the patterned carbon nanotube array 16 can also penetrate the fixed layer 14 and directly contact with the heat generating element to improve heat dissipation efficiency. The material of the pinned layer 14 is a thermally conductive material 'including a composite material or a low melting point metal. The composite material comprises a conductive polymer composite, a conductive ceramic composite or other conductive composite material, such as a plastic containing a carbon nanotube. The low melting point metal includes an alloy or mixture of tin, indium, lead, antimony, fischer, and any combination thereof, such as tin-lead alloy, indium tin alloy, tin-silver alloy, and the like. The thickness of the fixing layer 14 is not too thick, and should not be too thin. Too thick is not suitable for fully utilizing the carbon nanotubes in the carbon nanotube array 16. The performance is too thin to reduce the patterning. The holding force of the carbon nanotube array 16 causes the pouring of the carbon nanotube array 16 . Preferably, the fixing layer 14 has a thickness of from 1 mm to 1 mm. The patterned carbon nanotube array 16 includes a plurality of parallel disposed carbon nanotubes 'nanocarbon tubes extending in a direction from the first end 162 to the second end 164 of the patterned carbon nanotube array 16 The carbon nanotubes are substantially perpendicular to the surface 18 of the fixed layer 14. Since the first end 162 of the patterned carbon nanotube array 16 is disposed in the fixed layer, the carbon nanotube is at least partially disposed in the fixed layer ,, and the portion of the carbon nanotube exposed to the outside of the fixed layer 14 serves as a heat sink. The fins 7 dissipate the heat generated by the heat generating element 12. The patterned nano 201006369 - carbon tube array 16 can form a predetermined pattern according to the needs of the heating element 12, and the formation of the predetermined pattern includes the following three cases: First, the patterned nano carbon A portion of the carbon nanotube in which the fixed layer 14 is exposed in the tube array 16 is removed. 'The remaining carbon nanotubes are exposed to the same length of the portion of the fixed layer 14 to form a predetermined planar pattern such as a circle, a cross, a ring, etc. Second, the length of the carbon nanotubes in the patterned carbon nanotube array 16 exposing the fixed layer 14 is different 'forming a predetermined solid figure; third, the patterned carbon nanotube array 16 A portion of the portion of the carbon nanotube that exposes the pinned layer 14 is removed, and the remaining portions of the carbon nanotube that expose the pinned layer 14 are unequal in length to form a predetermined pattern. In this embodiment, a part of the carbon nanotubes in the patterned nano-stone array 16 is exposed to expose the portion of the fixed layer 14, and the remaining portions of the carbon nanotubes are exposed to the same length of the fixed layer 14 to form the same. Figure 3 shows the '', word channel. When applied, the patterned carbon nanotube array 16 can increase air convection and contribute to improved heat dissipation efficiency. The length of the medium carbon nanotubes of the patterned carbon nanotube array 16 is greater than the thickness of the fixed layer 14. Preferably, the patterned carbon nanotube array 16_nanocarbon nanotubes have a length of from 0.5 mm to 5 mm. The length of the carbon nanotubes in the patterned carbon nanotube array 16 is i mm. The carbon nanotubes in the patterned carbon nanotube array 16 are single-walled carbon nanotubes, double-walled carbon nanotubes, multi-walled carbon nanotubes or any combination thereof. The diameter of the single-walled carbon nanotube is 〇5-million-100 nm, and the diameter of the double-walled carbon nanotube is 1 〇Ny-1 〇〇 〇〇 该 The diameter of the multi-walled carbon nanotube is 1>; 5 nanometer nano. The graphic department does not hinder the distance between the carbon nanotubes in Guanjin 16 as 〇1 nm. The specific shape of the heat generating component 12 is not limited, and it may have a surface for providing the fixing layer 14. The surface 18 may be a flat surface, a convex surface, a concave surface, or a convex or concave surface. The melting point of the surface 18 of the heat generating component 12 should be high at the melting point of the fixed layer 14 to ensure that the heat dissipating structure 10 does not cause damage to the heat generating component when formed on the heat generating component 12. The heat generating component 12 can be any heat generating component, including a micro device or a large device. Preferably, the heat generating component 12 is a micro device. Referring to FIG. 4 and FIG. 5, the embodiment of the present invention provides a method for preparing the heat dissipation structure 10, which specifically includes the following steps: Step 1: A heating element 12 is provided, and the heating element 12 has a surface 18. The specific shape of the heat generating component 12 is not limited, and it has a surface 18 for providing the fixed layer 14. The melting point of the surface 18 of the heating element 12 should be higher than the melting point of the fixed layer to ensure that the heat dissipating structure 10 does not cause damage to the heating element when it is formed on the heating element 12. In the present embodiment, the heat generating element 12 is a wafer used in an integrated circuit. Step 2, forming a molten fixed layer 14 on the surface 18 of the heat generating component 12. The fixed layer material in the molten state is disposed on the surface 18 of the heat generating component 12 by coating, printing, or the like to form a fixed layer 14. The material of the fixed layer 14 is a heat conductive material, and the specific material thereof is not limited, and may be low. Melting point of metal. The low-spot metal includes kick, indium, erbium, ytterbium, silver, silk, and alloys or mixtures of the foregoing two materials, such as tin-lead alloy, indium-tin alloy, tin-silver-copper alloy, etc., in this embodiment, the fixed layer The material is preferably metallic tin. The carbon nanotube array 22 is formed on a substrate 20, and the second end opposite the first end is connected to the substrate 20. The specific preparation method of the carbon nanotubes 22 is not limited. The preparation method of the carbon nanotube array in the technical example of the present invention adopts the chemical vapor deposition 12 201006369 method, which specifically includes the following steps: (〇 provides a flat substrate 20, The substrate 20 may be selected from the group consisting of glass, stellite, sulphur dioxide, metal or metal oxide, and the embodiment of the technical solution preferably uses a cerium oxide substrate; (b) uniformly forms a catalyst layer on the surface of the substrate 20, The catalyst layer material may be one selected from the group consisting of iron (8), recorded (four), nickel (Ni) or any combination thereof; (^) the substrate 2 on which the catalyst layer is formed is entangled in 7 〇〇. (10) C is annealed in air. (4) Place the treated substrate 2〇 in a reaction furnace and heat it to 5〇〇〇c _74〇 under a protective gas atmosphere. 〇, ❹ then pass the carbon source gas for about 5 minutes. _3 In a few minutes, a carbon nanotube array is grown. The carbon nanotube array is a plurality of carbon nanotube arrays 22 formed by carbon nanotubes that are parallel to each other and grown. The nanometer, the array 22 Including - a first end and a second end opposite the first end The second end is connected to the substrate 2G and is fixed on the substrate 2 (), and the carbon nanotubes extend from the first end to the second end in the carbon nanotube array 22. In the embodiment, the carbon source gas can be The acetylene, ethylene, methane and other chemically active hydrocarbons are selected. The preferred surface gas of the embodiment of the present invention is that the m-mum is nitrogen (iv), and the preferred shielding gas of the embodiment of the technical solution is argon. It can be understood that the carbon nanotube array provided by the embodiment of the present technical solution is not limited to the above preparation method, and may also be a graphite electrode constant current arc discharge deposition method, a laser evaporation deposition method, etc. Step 4: The above-mentioned nano carbon The first end of the tube array 22 is inserted into the fixed layer 14 in the molten state, and the fixed layer 14 is cooled to be solidified. After the first end of the carbon tube array 22 is inverted, it is slowly inserted into the fixed layer 14 of the molten L. The carbon nanotube array 22 is inserted into the fixed layer 14 so that the depth is not limited, and can be adjusted according to actual conditions. The carbon nanotube array 22 can be directly contacted with the surface of the heating element 12 through the fixed layer 14 of the 2010-0636. Tube array 22 is smoothly inserted Given layer 14, the pinned layer 14 is inserted before the meter Nye carbon tube array 22, the fixed layer 14 should be maintained
一定的溫度，使其處於熔融態，當將奈米碳管陣列22插 入固定層14中後，在室溫下冷卻該熔融態固定層14，待 固定層14凝固後，奈米碳管陣列22的第一端固定於固 定層14中，使奈米碳管陣列22中的奈米碳管通過該固 疋層14固定於發熱70件12上。奈米碳管陣列22中奈米 碳管與發熱元件12的表面18所成的角度為9〇度。 步驟五、除去奈米碳管陣列22的基底2〇。 採用機械研磨、化學刻蝕等方法除去奈米碳管陣列 22的基底2〇’本實施例中’採用化學㈣的方法將基底 20除去。其具體包括以下步驟： 首先，提供一可溶解基底的腐蝕液，本實施例中， 奈米碳管陣列22的基底2〇 A -氧 、容液。 &川為一氧化矽，腐蝕液選鹽酸 •中-it: f奈米碳管陣列22的基底20浸入該腐蝕液 時。本實施例中，由於基底的材 屬了故，在二奈米碳管陣列22 f的催化劑材料為金 性、容液中'包過程中m〇貞催化劑溶解於該酸 J·生命液中，從而將奈米 奈求碳管陣列22的第一：:列2的基底20除去’使 中。 的第一螭與基底2〇脫離，暴露於空氣 、丙_等有機容劑洗 形化’在發熱元件12 Ί又 7 保用 滌奈米碳管陣列22的第一端， 步驟六、將奈米碳管陣列 14 201006369 - 的表面18形成散熱結構ίο。 本實鉍例中，將奈米碳管陣列22圖形化的方法為採 用1-100000瓦/平方毫米的雷射光束以800-1500毫米/秒 的速度按照形成預定的圖形的路徑照射奈米碳管陣列 22，在奈米奴管陣列22中形成預定的圖形。 所述採用雷射光束照射奈米碳管陣列22的表面的方 法具體包括以下步驟·· 首先，提供一雷射器，該雷射器的雷射光束的照射路 ❹徑可通過電腦程式控制，本實施例中，所述雷射器為二氧 化碳雷射器。 其次，確定好奈米碳管陣列22中所需要形成的圖樣， 輸入電腦程式中，㈣雷射器中的雷射光束沿可形成該圖 樣的路徑照射，通過預先確定圖樣的方式，可實現批量化 製備，有利於產業化生產。 最後，開啟雷射器，使一定功率的雷射光束以一定的 速度從正面直接照射奈米碳管陣列22中的部分奈米碳 ❹管，形成圖形化的奈米碳管陣列16。經鐳射照射後，由於 鐳射的尚能量被奈米碳管吸收，產生的高溫將處於鐳射照 射路徑處處於固定層14外的奈米碳管被鐳射全部或部分 燒蝕掉，從而在奈米碳管陣列22中形成預定的圖形，形 成圖形化的奈米碳管陣列16。圖形化的奈米碳管陣列16 包括一第一端162及與第一端162相對的第二端164。圖 形化的奈米碳管陣列16的第一端162設置於固定層14 中，並通過固定層14使圖形化的奈米碳管陣列16固定於 發熱元件12的表面18 ’圖形化的奈米碳管陣列16的第二 端164向遠離固定層14的方向延伸。 15 201006369 士實施例中，雷射光束的功率密度為70000-80000瓦/ 、=毫米，掃描速度為1G(KM毫米/秒。上述雷射光束 度和掃描速度較大，可在雷射光束照射奈米碳管的 未碳管’不會對固定層14造成傷害，故’該 政—°構1〇對固定層14的材料的熔點無特殊要求。 :里解本技術方案中還可固定雷射光束，通過電 石^控制和移動奈米碳管陣列U的運動路徑，在奈米 反g陣列22中刻银所需圖樣。 :奈米碳管陣列22圖形化的目的係滿足散熱結構1〇 f夕方面的應用和要求，如增加散熱結構則通風 分利用散熱空間等。 ^述^熱結構10在應用時，當發熱元件12的溫度 =時’發熱元件12產生熱量，由於圖形化的奈米碳管 的第—端162 ^置於固定層中，熱量通過固定層 產Λ :二：的奈米碳管陣列16，將發熱元件12所 屋生的熱篁散發出去。 本技術方案所提供的散熱結構存在以下優點·· 一，該散熱結構直接固定於發熱元件上，盔介鉍 :與散熱器的結合，體積較小，可方便應用於各種Γ域材 :一，该散熱結構，的奈米碳管以陣列形 ，米碳管陣列中的奈米碳管垂直於固定層的表面，充； 利用了奈米碳管的縱向導熱性能’故，該散 三’該散熱結構中的奈米碳管作為散敎， :，由於奈米碳管的直徑很小，-般為幾奈米到;；： 使早個奈未碳f散錢片具有極大的長徑比，大: 增加了所述散熱結構的散熱面積，提高了散熱結構的散 16 4 201006369 ::效率，，、&於散熱結構中的固定層係以熔融態直 ，接與發熱元件接觸，可實現充分接觸，增加了散敎面積， 故，該散熱結構的散熱效率高。 … 、 综上所述’本發明確已符合發明專利之要件，遂 ^出專利申請°惟’以上所述者僅為本發明之較佳實施例， 自不此以此限制本案之申請專利範圍。舉凡習知 之人士援依本發明之精神所作之等效皆= 蓋於以下申請專利範圍内。 雙匕白應喊 ❹【圖式簡單說明】 圖1為先前技術中的散熱結構的結構示意圖。 圖2為本技術方案實施例所提供的設置於發埶 的散熱結構的剖面示意圖。 ’、、、牛上 圖3為圖2的俯視圖。 法的:ϋ本技術方案實施例所提供的散熱結構的製備方 蓺、☆圖5為本技術方案實施例所提供的散熱結構的製 _ 流程圖。 獨' 主 要元件符號說明】 102 104 106 108 10, 100 散熱器 熱介面材料 基體 散熱鳍片 散熱結構 17 201006369 發熱元件 12 固定層 14 發熱元件表面 18 圖形化的奈米碳管陣列 16 奈米碳管陣列第一端 162 奈米碳管陣列第二端 164 奈米碳管陣列基底 20 奈米碳管陣列 22A certain temperature is brought into a molten state. After the carbon nanotube array 22 is inserted into the fixed layer 14, the molten fixed layer 14 is cooled at room temperature, and after the fixed layer 14 is solidified, the carbon nanotube array 22 is closed. The first end is fixed in the fixed layer 14 such that the carbon nanotubes in the carbon nanotube array 22 are fixed to the heat generating 70 member 12 through the solid layer 14. The angle between the carbon nanotubes in the carbon nanotube array 22 and the surface 18 of the heating element 12 is 9 degrees. Step 5. The substrate 2 of the carbon nanotube array 22 is removed. The substrate 2 of the carbon nanotube array 22 is removed by mechanical polishing, chemical etching, or the like. In the present embodiment, the substrate 20 is removed by a chemical (four) method. Specifically, the method includes the following steps: First, an etching solution for dissolving the substrate is provided. In this embodiment, the substrate 2 of the carbon nanotube array 22 is 〇A-oxygen and liquid. &chuan is cerium oxide, the etching solution is selected for hydrochloric acid. • The medium-it: f substrate of the carbon nanotube array 22 is immersed in the etching liquid. In this embodiment, since the catalyst material of the second carbon nanotube array 22f is gold and liquid, the m〇贞 catalyst is dissolved in the acid J·the living liquid. Thus, the substrate 20 of the first::column 2 of the nanotubes carbon nanotube array 22 is removed. The first crucible is detached from the substrate 2, exposed to air, and the organic solvent is washed and washed. 'At the first end of the heating element 12 7 7 and the polyester carbon nanotube array 22, step 6. The carbon nanotube array 14 201006369 - the surface 18 forms a heat dissipation structure ίο. In the present embodiment, the method of patterning the carbon nanotube array 22 is to irradiate the nanocarbon with a laser beam of 1-100,000 watts/mm 2 at a speed of 800-1500 mm/sec according to a path forming a predetermined pattern. The tube array 22 forms a predetermined pattern in the nanotube array 22. The method for irradiating the surface of the carbon nanotube array 22 with a laser beam specifically includes the following steps: First, a laser is provided, and the illumination path of the laser beam of the laser device can be controlled by a computer program. In this embodiment, the laser is a carbon dioxide laser. Next, the pattern that needs to be formed in the carbon nanotube array 22 is determined and input into the computer program. (4) The laser beam in the laser is irradiated along a path that can form the pattern, and the batch can be realized by predetermining the pattern. Chemical preparation is conducive to industrial production. Finally, the laser is turned on so that a certain power of the laser beam directly illuminates a portion of the nanocarbon tube in the carbon nanotube array 22 from the front surface at a certain speed to form a patterned carbon nanotube array 16. After laser irradiation, since the energy of the laser is absorbed by the carbon nanotubes, the high temperature generated by the laser tube is in the laser irradiation path, and the carbon nanotubes outside the fixed layer 14 are completely or partially ablated by the laser, thereby being in the nano carbon. A predetermined pattern is formed in the tube array 22 to form a patterned carbon nanotube array 16. The patterned carbon nanotube array 16 includes a first end 162 and a second end 164 opposite the first end 162. The first end 162 of the patterned carbon nanotube array 16 is disposed in the pinned layer 14 and the patterned carbon nanotube array 16 is secured to the surface 18 of the heating element 12 by the pinned layer 14 'patterned nano The second end 164 of the carbon tube array 16 extends away from the fixed layer 14. 15 201006369 In the example, the power density of the laser beam is 70,000-80000 watts/, = mm, and the scanning speed is 1G (KM mm/s. The above laser beam and scanning speed are large, which can be irradiated by the laser beam. The carbon tube of the carbon nanotubes does not cause damage to the fixed layer 14, so there is no special requirement for the melting point of the material of the fixed layer 14 in the structure of the fixed layer 14. The beam is irradiated, and the movement path of the carbon nanotube array U is controlled and moved by the calcium carbide. The desired pattern of silver is engraved in the nano-anti-g array 22. The purpose of the pattern of the carbon nanotube array 22 is to satisfy the heat dissipation structure. The application and requirements of the eve aspect, such as the increase of the heat dissipation structure, the ventilation and the use of the heat dissipation space, etc. ^When the heat structure 10 is applied, when the temperature of the heat generating component 12 = 'the heat generating component 12 generates heat, due to the patterned nai The first end 162 ^ of the carbon tube is placed in the fixed layer, and the heat is generated through the fixed layer: the carbon nanotube array 16 of the second: the heat enthalpy of the heating element 12 is emitted. The heat dissipation structure has the following advantages: The thermal structure is directly fixed on the heating element, and the helmet interface: combined with the heat sink, the volume is small, and can be conveniently applied to various Γ domain materials: one, the heat dissipation structure, the carbon nanotubes are arranged in an array, the carbon nanotubes The carbon nanotubes in the array are perpendicular to the surface of the fixed layer, and charge; the longitudinal thermal conductivity of the carbon nanotubes is utilized; therefore, the carbon nanotubes in the heat dissipation structure are used as a heat sink, : The diameter of the carbon tube is small, generally a few nanometers to;;: The early Naiwu carbon f loose sheet has a great aspect ratio, which is large: the heat dissipation area of the heat dissipation structure is increased, and the heat dissipation structure is improved. The dispersion of 16 4 201006369 :: efficiency,,, & the fixed layer in the heat dissipation structure is in a molten state, and is in contact with the heating element, which can achieve sufficient contact and increase the area of the heat dissipation, so the heat dissipation of the heat dissipation structure The efficiency is high. ... In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is only a preferred embodiment of the present invention, and the present invention is not limited thereto. Apply for a patent scope. The equivalent of the spirit of the present invention is covered by the following patent application. Double 匕 应 应 ❹ ❹ ❹ ❹ ❹ ❹ ❹ ❹ ❹ ❹ 简单 图 图 图 图 图 图 图 结构 结构 结构 结构 结构 结构 结构 结构 结构 结构FIG. 3 is a plan view of the heat dissipation structure provided in the embodiment of the present invention. The method of preparing the heat dissipation structure provided by the embodiment of the present invention is ☆ 5 is a flow chart of the heat dissipation structure provided by the embodiment of the present technical solution. Unique 'symbol description of main components】 102 104 106 108 10, 100 heat sink thermal interface material base heat sink fin heat dissipation structure 17 201006369 heating element 12 fixed layer 14 heating element surface 18 patterned carbon nanotube array 16 carbon nanotube array first end 162 carbon nanotube array second end 164 carbon nanotube array substrate 20 carbon nanotube array 22
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